Details of a Researcher - KAKITSUKA, Takaaki

写真a

KAKITSUKA, Takaaki

Scopus Paper Info

Paper Count: 236 Citation Count: 2827 h-index: 27

Click to view the Scopus page. The data was downloaded from Scopus API in May 15, 2024, via http://api.elsevier.com and http://www.scopus.com .

Affiliation

Faculty of Science and Engineering, Graduate School of Information, Production, and Systems

Job title

Associate Professor

Degree

博士（工学） ( 九州大学 )

Research Experience

2019.04

-

Now

Waseda University Graduate School of Information, Production and Systems Associate Professor
1996.04

-

2019.03

NTT Corporation
2017

-

2018

Kyushu Univerisity Graduate School of Information Science and Electrical Engineering Visiting Professor

Education Background

2009.04

-

2012.03

Kyushu University Interdisciplinary Graduate School of Engineering Sciences Department of Applied Science for Electronics and Materials
1994.04

-

1996.03

Kyushu University Graduate School of Science Department of Physics
1990.04

-

1994.03

Kyushu University Faculty of Science Department of Physics

Committee Memberships

2019.06

-

Now

電子情報通信学会レーザ・量子エレクトロニクス研究会 (LQE) 専門委員
2022.06

-

2023.06

電子情報通信学会エレクトロニクスソサイエティ大会運営委員長
2021.06

-

2022.06

電子情報通信学会エレクトロニクスソサイエティ大会運営幹事
2013.01

-

2014.12

IEEE東京支部 Fellow Nomination Committee Secretary
2013.01

-

2013.12

IEEE Photonics Society Japan Chapter Secretary
2013

-

　

CLEO-PR/OECC/PS 2013 Program Committee
2013

-

　

IPRM 2013 Organization Committee (Publication)
2013

-

　

Microoptics Conference 2013 Program Committee
2012.01

-

2012.12

IEEE Photonics Society Japan Chapter Treasurer
2008.01

-

2009.06

光産業技術振興協会技術動向調査委員

▼display all

Professional Memberships

　

　

　

THE INSTITUTE OF ELECTRONICS, INFORMATION AND COMMUNICATION ENGINEERS
　

　

　

IEEE
　

　

　

THE JAPAN SOCIETY OF APPLIED PHYSICS
　

　

　

THE PHYSICAL SOCIETY OF JAPAN

Research Areas

Electron device and electronic equipment

Research Interests

光エレクトロニクス
フォトニクス
光デバイス

Awards

The 35th Kenjiro Sakurai Memorial Prize

2020.02 Optoelectronics Industry and Technology Development Association Development of small-threshold-current and high-operating-speed membrane semiconductor lasers

Winner： Shinji Matsuo, Takaaki Kakitsuka, Koji Takeda, Tomonari Sato
平成24年度電子情報通信学会論文賞

2013.05 The Institute of Electronics, Information and Communication Engineers High-Temperature Operation of Photonic-Crystal Lasers for On-Chip Optical Interconnection

Winner： Koji Takeda, Tomonari Sato, Takaaki Kakitsuka, Akihiko Shinya, Kengo Nozaki, Chin-Hui Chen, Hideaki Taniyama, Masaya Notomi, Shinji Matsuo
第28回電気通信普及財団テレコムシステム技術賞

2013.03 The Telecommunications Advancement Foundation Monolithically Integrated Wavelength-Routing Switch Using Tunable Wavelength Converters with Double-Ring-Resonator Tunable Lasers

Winner： Toru Segawa, Shinji Matsuo, Takaaki Kakitsuka, Yasuo Shibara, Tomonari Sato, Yoshihiro Kawaguchi, Yasuhiro Kondo, Ryo Takahashi
平成23年度電子情報通信学会論文賞

2012.05 The Institute of Electronics, Information and Communication Engineers Monolithically Integrated Wavelength-Routing Switch Using Tunable Wavelength Converters with Double-Ring-Resonator Tunable Lasers

Winner： Toru Segawa, Shinji Matsuo, Takaaki Kakitsuka, Yasuo Shibata, Tomonari Sato, Yoshihiro Kawaguchi, Yasuhiro Kondo, Ryo Takahashi

Papers

Low-power-consumption modulation of short-cavity DBR laser on SiO₂/Si substrate

Erina Kanno, Koji Takeda, Takuro Fujii, Takaaki Kakitsuka, Shinji Matsuo

Optics Express 32 ( 8 ) 14746 - 14746 2024.04 [Refereed]

　View Summary

We developed short-active-length distributed Bragg reflector (DBR) lasers to reduce the power consumption of chip-to-chip optical interconnects. These lasers have buried bulk InGaAsP waveguides to increase the coupling efficiency between the active region and DBR to 99.79% from the 98.14% of our previous DBR lasers that had InP channel waveguides. We achieved continuous wave operation of 5- to 80-µm active-length DBR lasers and the 5-µm-long laser consumed 24 fJ/bit with a 10-Gbps NRZ signal. The threshold current of the 5-µm laser was 51 µA, which compares favorably to our previous 10-µm DBR lasers with a threshold current of 170 µA.

DOI
Power-efficient 2 × 2 Si Mach-Zehnder interferometer optical switch utilizing compact slow-light phase shifter

Deji Li, Wenkai Yang, Takaaki Kakitsuka, Kiyoto Takahata

2024 IEEE Silicon Photonics Conference, Urayasu, Japan WP8 2024.04 [Refereed]
Numerical Demonstration of Silicon Micro-Ring Modulator with X-Interleaved PN Junction for High Modulation Efficiency

Wenkai Yang, Deji Li, Takaaki Kakitsuka, Kiyoto Takahata

2023 Asia Communications and Photonics Conference/2023 International Photonics and Optoelectronics Meetings (ACP/POEM) 2023.11 [Refereed]

DOI
Uncooled 100-GBaud Directly Modulated Membrane Lasers on SiC Substrate

Suguru Yamaoka, Nikolaos-Panteleimon Diamantopoulos, Hidetaka Nishi, Takuro Fujii, Koji Takeda, Tatsurou Hiraki, Shigeru Kanazawa, Takaaki Kakitsuka, Shinji Matsuo

Journal of Lightwave Technology 41 ( 11 ) 3389 - 3396 2023.06 [Refereed]

DOI
Uncooled Operation of Membrane InGaAlAs MQW Electro-absorption Modulator on Si Platform

Tatsurou Hiraki, Takuma Aihara, Yoshiho Maeda, Takuro Fujii, Tomonari Sato, Tai Tsuchizawa, Kiyoto Takahata, Takaaki Kakitsuka, Shinji Matsuo

IEEE Silicon Photonics Conference 2023, Arlington, USA ThD2 2023.04 [Refereed]
Uncooled Operation of Si Mach-Zehnder Modulator Integrated with Membrane Semiconductor Optical Amplifiers inside Interferometer Arms

Takuma Aihara, Tatsurou Hiraki, Takuro Fujii, Koji Takeda, Hiroshi Fukuda, Takaaki Kakitsuka, Tai Tsuchizawa, Shinji Matsuo

Optical Fiber Communication Conference (OFC) 2023, San Diego, USA Tu2B.5 2023.03 [Refereed]
Membrane InP-based Optical Modulators on Si Platform

Tatsurou Hiraki, Takuma Aihara, Yoshiho Maeda, Takuro Fujii, Koji Takeda, Tai Tsuchizawa, Kiyoto Takahata, Takaaki Kakitsuka, Tomonari Sato, Shinji Matsuo

The Annual Conference of the IEEE Photonics Society (IPC), Vancouver, Canada TuG3.5 2022.11 [Invited]
Over-67-GHz-bandwidth Membrane InGaAlAs Electro-absorption Modulator Integrated with DFB Laser on Si Platform

Tatsurou Hiraki, Takuma Aihara, Yoshiho Maeda, Takuro Fujii, Tomonari Sato, Tai Tsuchizawa, Kiyoto Takahata, Takaaki Kakitsuka, Shinji Matsuo

Journal of Lightwave Technology 41 ( 3 ) 880 - 887 2022.11 [Refereed]

DOI
Heterogeneously integrated membrane III-V compound semiconductor devices with silicon photonics platform

Shinji Matsuo, Takuma Aihara, Tatsurou Hiraki, Yoshiho Maeda, Toshiki Kishi, Takuro Fujii, Koji Takeda, Takaaki Kakitsuka

IEEE Journal of Selected Topics in Quantum Electronics 29 ( 3 ) 6100510 2022.10 [Refereed] [Invited]

DOI

Scopus

2

Citation

(Scopus)
Theoretical analysis of dispersion-tolerant single-drive mixed amplitude-frequency modulation lasers

Takaaki Kakitsuka, Kiyoto Takahata

28th International Semiconductor Laser Conference (ISLC 2022), Matsue, Japan TuP-35 2022.10 [Refereed]

DOI
Semi-cooled 128-Gbit/s NRZ operation of directly modulated membrane lasers on SiC substrate

Suguru Yamaoka, Nikolaos-Panteleimon Diamantopoulos, Hidetaka Nishi, Takuro Fujii, Koji Takeda, Tatsurou Hiraki, Shigeru Kanazawa, Takaaki Kakitsuka, Shinji Matsuo

28th International Semiconductor Laser Conference (ISLC 2022), Matsue, Japan MA-03 2022.10 [Refereed]

DOI
Uncooled Operation of 100 GBaud Directly Modulated Membrane Lasers on high-thermal-conductivity SiC substrate

Suguru Yamaoka, Nikolaos-Panteleimon Diamantopoulos, Hidetaka Nishi, Takuro Fujii, Koji Takeda, Tatsurou Hiraki, Shigeru Kanazawa, Takaaki Kakitsuka, Shinji Matsuo

The 48th European Conference on Optical Communication (ECOC 2022) We1E.3 2022.09 [Refereed]
Heterogeneously integrated widely tunable laser using lattice filter and ring resonator on Si photonics platform

Takuma Aihara, Tatsurou Hiraki, Takuro Fujii, Koji Takeda, Tai Tsuchizawa, Takaaki Kakitsuka, Hiroshi Fukuda, Shinji Matsuo

Optics Express 30 ( 10 ) 15820 - 15829 2022.04 [Refereed]

DOI
Over-67-GHz-bandwidth Membrane InGaAlAs EADFB Laser on Si Platform

Tatsurou Hiraki, Takuma Aihara, Yoshiho Maeda, Takuro Fujii, Tomonari Sato, Tai Tsuchizawa, Kiyoto Takahata, Takaaki Kakitsuka, Shinji Matsuo

Optical Fiber Communication Conference (OFC) 2022 M3D.2 2022.03 [Refereed]

DOI
60 GHz Bandwidth Directly Modulated Membrane III-V Lasers on SiO2/Si

Nikolaos Panteleimon Diamantopoulos, Takuro Fujii, Suguru Yamaoka, Hidetaka Nishi, Koji Takeda, Tai Tsuchizawa, Toru Segawa, Takaaki Kakitsuka, Shinji Matsuo

Journal of Lightwave Technology 40 ( 10 ) 3299 - 3306 2022.02 [Refereed]

DOI
60-GHz-bandwidth O-band Membrane InGaAlAs Electro-Absorption Modulator on Si Platform

Takuma Aihara, Tatsurou Hiraki, Yoshiho Maeda, Takuro Fujii, Tai Tsuchizawa, Kiyoto Takahata, Takaaki Kakitsuka, Shinji Matsuo

2021 IEEE 17th International Conference on Group IV Photonics (GFP) WA1 2021.12 [Refereed]

DOI
38-fJ/bit Direct Modulation of a 5-μm-long Active Region Membrane DBR Laser on SiO2/Si Substrate

Erina Kanno, Koji Takeda, Takuro Fujii, Takaaki Kakitsuka, Shinji Matsuo

2021 27th International Semiconductor Laser Conference (ISLC), Potsdam, Germany WA1.1 2021.10 [Refereed]

DOI
2-channel 112-Gbps NRZ Short-Reach Transmissions Based on 60-GHz-Bandwidth Directly-Modulated Membrane Laser Array on Si

Nikolaos-Panteleimon Diamantopoulos, Takuro Fujii, Suguru Yamaoka, Hidetaka Nishi, Koji Takeda, Tai Tsuchizawa, Toru Segawa, Takaaki Kakitsuka, Shinji Matsuo

2021 47th European Conference on Optical Communication (ECOC 2021), Bordeaux, France Tu3D.3 2021.09 [Refereed]

DOI

Scopus

1

Citation

(Scopus)
Optical links on silicon photonic chips using ultralow-power consumption photonic-crystal lasers

Koji Takeda, Takuma Tsurugaya, Takuro Fujii, Akihiko Shinya, Yoshiho Maeda, Tai Tsuchizawa, Hidetaka Nishi, Masaya Notomi, Takaaki Kakitsuka, Shinji Matsuo

Optics Express 29 ( 16 ) 26082 - 26082 2021.08 [Refereed]

DOI
50-GHz-bandwidth Membrane InGaAsP Electro-absorption Modulator on Si Platform

Tatsurou Hiraki, Takuma Aihara, Yoshiho Maeda, Takuro Fujii, Tai Tsuchizawa, Kiyoto Takahata, Takaaki Kakitsuka, Shinji Matsuo

Journal of Lightwave Technology 39 ( 16 ) 5300 - 5306 2021.05 [Refereed]

DOI
Effects of intermediate SiO2 bonding thickness on thermal properties of membrane distributed reflector lasers on SiC substrates

Suguru Yamaoka, Ryo Nakao, Takuro Fujii, Koji Takeda, Tatsurou Hiraki, Hidetaka Nishi, Takaaki Kakitsuka, Tai Tsuchizawa, Shinji Matsuo

Compound Semiconductor Week 2021 (CSW 2021) TuC2-4 2021.05 [Refereed]
Widely tunable laser with lattice filter on Si photonic platform

Takuma Aihara, Tatsurou Hiraki, Takuro Fujii, Koji Takeda, Tai Tsuchizawa, Takaaki Kakitsuka, Hiroshi Fukuda, Shinji Matsuo

Compound Semiconductor Week 2021 (CSW 2021) TuA2-5 2021.05 [Refereed]
High-temperature Operation of Integrated Membrane DFB Laser with InGaAsP Mach-Zehnder Modulator on Si Platform

Tatsurou Hiraki, Takuma Aihara, Takuro Fujii, Koji Takeda, Yoshiho Maeda, Tai Tsuchizawa, Takaaki Kakitsuka, Shinji Matsuo

Compound Semiconductor Week 2021 (CSW 2021) TuA2-4 2021.05 [Refereed]
Development of an Epitaxial Growth Technique Using III-V on a Si Platform for Heterogeneous Integration of Membrane Photonic Devices on Si

Takuro Fujii, Tatsurou Hiraki, Takuma Aihara, Hidetaka Nishi, Koji Takeda, Tomonari Sato, Takaaki Kakitsuka, Tai Tsuchizawa, Shinji Matsuo

Applied Sciences 11 ( 4 ) 1801 - 1801 2021.02 [Refereed]

　View Summary

The rapid increase in total transmission capacity within and between data centers requires the construction of low-cost, high-capacity optical transmitters. Since a tremendous number of transmitters are required, photonic integrated circuits (PICs) using Si photonics technology enabling the integration of various functional devices on a single chip is a promising solution. A limitation of a Si-based PIC is the lack of an efficient light source due to the indirect bandgap of Si; therefore, hybrid integration technology of III-V semiconductor lasers on Si is desirable. The major challenges are that heterogeneous integration of III-V materials on Si induces the formation of dislocation at high process temperature; thus, the epitaxial regrowth process is difficult to apply. This paper reviews the evaluations conducted on our epitaxial growth technique using a directly bonded III-V membrane layer on a Si substrate. This technique enables epitaxial growth without the fundamental difficulties associated with lattice mismatch or anti-phase boundaries. In addition, crystal degradation correlating with the difference in thermal expansion is eliminated by keeping the total III-V layer thickness thinner than ~350 nm. As a result, various III-V photonic-device-fabrication technologies, such as buried regrowth, butt-joint regrowth, and selective area growth, can be applicable on the Si-photonics platform. We demonstrated the growth of indium-gallium-aluminum arsenide (InGaAlAs) multi-quantum wells (MQWs) and fabrication of lasers that exhibit >25 Gbit/s direct modulation with low energy cost. In addition, selective-area growth that enables the full O-band bandgap control of the MQW layer over the 150-nm range was demonstrated. We also fabricated indium-gallium-arsenide phosphide (InGaAsP) based phase modulators integrated with a distributed feedback laser. Therefore, the directly bonded III-V-on-Si substrate platform paves the way to manufacturing hybrid PICs for future data-center networks.

DOI

Scopus

12

Citation

(Scopus)
47.5 GHz Membrane-III-V-on-Si Directly Modulated Laser for Sub-pJ/bit 100-Gbps Transmission

Nikolaos-Panteleimon (Pandelis) Diamantopoulos, Suguru Yamaoka, Takuro Fujii, Hidetaka Nishi, Koji Takeda, Tai Tsuchizawa, Takaaki Kakitsuka, Shinji Matsuo

Photonics 8 ( 2 ) 31 - 31 2021.01 [Refereed]

　View Summary

Near-future upgrades of intra data center networks and high-performance computing systems would require optical interconnects capable of operating at beyond 100 Gbps/lane. In order for this evolution to be achieved in a sustainable way, high-speed yet energy-efficient transceivers are in need. Towards this direction we have previously demonstrated directly-modulated lasers (DMLs) capable of operating at 50 Gbps/lane with sub-pJ/bit efficiencies based on our novel membrane-III-V-on-Si technology. However, there exists an inherent tradeoff between modulation speed and power consumption due to the carrier-photon dynamics in DMLs. In this work, we alleviate this tradeoff by introducing photon–photon resonance dynamics in our energy-efficient membrane DMLs-on-Si design and demonstrate a device with a maximum 3-dB bandwidth of 47.5 GHz. This denotes a bandwidth increase of more than 2x times compared to our previous membrane DMLs-on-Si. Moreover, the DML is capable of delivering 60-GBaud PAM-4 signals under Ethernet’s KP4-FEC threshold (net data rate of 113.42 Gbps) over 2-km of standard single-mode fiber transmission. DC energy-efficiencies of 0.17 pJ/bit at 25 °C and 0.34 pJ/bit at 50 °C have been achieved for the > 100-Gbps signals. Deploying such DMLs in an integrated multichannel transceiver should ensure a smooth evolution towards Terabit-class Ethernet links and on-board optics subsystems.

DOI

Scopus

13

Citation

(Scopus)
Integration of a high-efficiency Mach-Zehnder modulator with a DFB laser using membrane InP-based devices on a Si photonics platform

Tatsurou Hiraki, Takuma Aihara, Takuro Fujii, Koji Takeda, Yoshiho Maeda, Takaaki Kakitsuka, Tai Tsuchizawa, Shinji Matsuo

Optics Express 29 ( 2 ) 2431 - 2431 2021.01 [Refereed]

DOI
50-GHz-bandwidth Electro-absorption Modulator with Membrane InGaAsP Lateral p-i-n Diode on Si Platform

Tatsurou Hiraki, Takuma Aihara, Yoshiho Maeda, Takuro Fujii, Tai Tsuchizawa, Kiyoto Takahata, Takaaki Kakitsuka, Shinji Matsuo

The 46th European Conference on Optical Communication (ECOC 2020), Brussels, Belgium Tu1B-4 2020.12 [Refereed]

DOI

Scopus

3

Citation

(Scopus)
Heterogeneously Integrated Membrane DFB Laser and Si Mach-Zehnder Modulator on Si Photonics Platform

Takuma Aihara, Tatsurou Hiraki, Takuro Fujii, Koji Takeda, Tai Tsuchizawa, Takaaki Kakitsuka, Hiroshi Fukuda, Shinji Matsuo

The 46th European Conference on Optical Communication (ECOC 2020), Brussels, Belgium Mo2B-5 2020.12 [Refereed]

DOI

Scopus

1

Citation

(Scopus)
Net 113-Gbps PAM-4 Transmission Using Membrane DML-on-Si with 0.34 pJ/bit at 50oC

Nikolaos-Panteleimon Diamantopoulos, Suguru Yamaoka, Takuro Fujii, Hidetaka Nishi, Koji Takeda, Tai Tsuchizawa, Takaaki Kakitsuka, Shinji Matsuo

The 46th European Conference on Optical Communication (ECOC 2020), Brussels, Belgium Mo2B-4 2020.12 [Refereed]

DOI

Scopus

1

Citation

(Scopus)
Directly modulated membrane lasers with 108 GHz bandwidth on a high-thermal-conductivity silicon carbide substrate

Suguru Yamaoka, Nikolaos-Panteleimon Diamantopoulos, Hidetaka Nishi, Ryo Nakao, Takuro Fujii, Koji Takeda, Tatsurou Hiraki, Takuma Tsurugaya, Shigeru Kanazawa, Hiromasa Tanobe, Takaaki Kakitsuka, Tai Tsuchizawa, Fumio Koyama, Shinji Matsuo

Nature Photonics 15 ( 1 ) 28 - 35 2020.10 [Refereed]

DOI

Scopus

119

Citation

(Scopus)
>100-GHz Bandwidth Directly-Modulated Lasers and Adaptive Entropy Loading for Energy-Efficient >300-Gbps/λ IM/DD Systems

Nikolaos-Panteleimon Diamantopoulos, Hiroshi Yamazaki, Suguru Yamaoka, Munehiko Nagatani, Hidetaka Nishi, Hiromasa Tanobe, Ryo Nakao, Takuro Fujii, Koji Takeda, Takaaki Kakitsuka, Hitoshi Wakita, Minoru Ida, Hideyuki Nosaka, Fumio Koyama, Yutaka Miyamoto, Shinji Matsuo

Journal of Lightwave Technology 39 ( 3 ) 771 - 778 2020.09 [Refereed]

DOI
Multiwavelength membrane laser array using selective area growth on directly bonded InP on SiO2/Si

Takuro Fujii, Koji Takeda, Hidetaka Nishi, Nikolaos-Panteleimon Diamantopoulos, Tomonari Sato, Takaaki Kakitsuka, Tai Tsuchizawa, Shinji Matsuo

Optica 7 ( 7 ) 838 - 838 2020.07 [Refereed]

DOI
Membrane III-V/Si DFB Laser Using Uniform Grating and Width-Modulated Si Waveguide

Takuma Aihara, Tatsurou Hiraki, Takuro Fujii, Koji Takeda, Takaaki Kakitsuka, Tai Tsuchizawa, Shinji Matsuo

Journal of Lightwave Technology 38 ( 11 ) 2961 - 2967 2020.06 [Refereed]

DOI
Membrane InGaAsP Mach–Zehnder Modulator Integrated With Optical Amplifier on Si Platform

Tatsurou Hiraki, Takuma Aihara, Takuro Fujii, Koji Takeda, Takaaki Kakitsuka, Tai Tsuchizawa, Shinji Matsuo

Journal of Lightwave Technology 38 ( 11 ) 3030 - 3036 2020.06 [Refereed]

DOI
Net 321.24-Gb/s IMDD Transmission Based on a >100-GHz Bandwidth Directly-Modulated Laser

Nikolaos Panteleimon Diamantopoulos, Hiroshi Yamazaki, Suguru Yamaoka, Munehiko Nagatani, Hidetaka Nishi, Hiromasa Tanobe, Ryo Nakao, Takuro Fujii, Koji Takeda, Takaaki Kakitsuka, Hitoshi Wakita, Minoru Ida, Hideyuki Nosaka, Fumio Koyama, Yutaka Miyamoto, Shinji Matsuo

The Optical Networking and Communication Conference & Exhibition (OFC 2020), San Diego USA Post Deadline Paper Th4C.1 2020.03 [Refereed]

DOI
Mach-Zehnder Modulator using Membrane InGaAsP Phase Shifters and SOAs inside Interferometer Arms on Si Photonics Platform

Takuma Aihara, Tatsurou Hiraki, Takuro Fujii, Koji Takeda, Takaaki Kakitsuka, Tai Tsuchizawa, Shinji Matsuo

The Optical Networking and Communication Conference & Exhibition (OFC 2020), San Diego USA M2B.5 2020.03 [Refereed]

DOI
4×56-GBaud PAM-4 SDM Transmission Over 5.9-km 125-μm-Cladding MCF Using III-V-on-Si DMLs

Nikolaos Panteleimon Diamantopoulos, Hidetaka Nishi, Takuro Fujii, Kota Shikama, Takashi Matsui, Koji Takeda, Takaaki Kakitsuka, Kazuhide Nakajima, Shinji Matsuo

The Optical Networking and Communication Conference & Exhibition (OFC 2020), San Diego USA W1D.4 2020.03 [Refereed]

DOI
Vertical Optical Waveguide Comprising Square Base Cuboid Cores with Size Modulation for Multilayer Chip-to-Chip Interconnection

Songpin Ran, Takaaki Kakitsuka, Kiyoto Takahata

8th International Conference on Photonics, Optics and Laser Technology, Valletta, Malta 20-5A 2020.02 [Refereed]
Integrated DFB Laser Diode and High-efficiency Mach-Zehnder Modulator using Membrane III-V Semiconductors on Si Photonics Platform

Tatsurou Hiraki, Takuma Aihara, Takuro Fujii, Koji Takeda, Takaaki Kakitsuka, Tai Tsuchizawa, Shinji Matsuo

The 65th International Electron Devices Meeting (IEDM 2019), San Fransisco, USA 33.4 2019.12 [Refereed]

DOI

Scopus

1

Citation

(Scopus)
Membrane buried-heterostructure DFB laser with an optically coupled III-V/Si waveguide

Takuma Aihara, Tatsurou Hiraki, Koji Takeda, Takuro Fujii, Takaaki Kakitsuka, Tai Tsuchizawa, Shinji Matsuo

Optics Express 27 ( 25 ) 36438 - 36448 2019.12 [Refereed]

DOI

Scopus

13

Citation

(Scopus)
Wide-Wavelength Range Membrane Laser Array Using Selectively Grown InGaAlAs MQWs on InP-on-insulator

Takuro Fujii, Tomonari Sato, Koji Takeda, Nikolaos-Panteleimon Diamantopoulos, Hidetaka Nishi, Takaaki Kakitsuka, Tai Tsuchizawa, Shinji Matsuo

The 45th European Conference on Optical Communication (ECOC 2019), Dublin, Ireland Th.2.D.4 2019.09 [Refereed]

DOI
Membrane III-V/Si DFB laser with width modulated silicon waveguide for narrowing linewidth

Takuma Aihara, Tatsurou Hiraki, Takuro Fujii, Koji Takeda, Tai Tsuchizawa, Takaaki Kakitsuka, Shinji Matsuo

The 45th European Conference on Optical Communication (ECOC 2019), Dublin, Ireland Th.2.D.5 2019.09 [Refereed]

DOI
Loss-less operation of membrane III-V semiconductor Mach-Zehnder modulator with optical amplifier on Si platform

Tatsurou Hiraki, Takuma Aihara, Takuro Fujii, Koji Takeda, Takaaki Kakitsuka, Tai Tsuchizawa, Shinji Matsuo

The 45th European Conference on Optical Communication (ECOC 2019), Dublin, Ireland Th.2.A.2 2019.09 [Refereed]

DOI
239.3-Gbit/s Net Rate PAM-4 Transmission using Directly Modulated Membrane Lasers on High-Thermal-Conductivity SiC

Suguru Yamaoka, Nikolaos-Panteleimon Diamantopoulos, Hidetaka Nishi, Ryo Nakao, Takuro Fujii, Koji Takeda, Tatsurou Hiraki, Shigeru Kanazawa, Hiromasa Tanobe, Takaaki Kakitsuka, Tai Tsuchizawa, Fumio Koyama, Shinji Matsuo

The 45th European Conference on Optical Communication (ECOC 2019), Dublin, Ireland Post Deadline Paper PD.2.1 2019.09 [Refereed]

DOI
Integrated PAM-4 WDM receiver by InGaAsP-based membrane PDs and SiN demultiplexer on Si

Hidetaka Nishi, Nicolaos-Panteleimon Diamantopoulos, Takuro Fujii, Yoshiho Maeda, Koji Takeda, Tai Tsuchizawa, Takaaki Kakitsuka, Hiroshi Fukuda, Shinji Matsuo

IEEE Photonics Conference (IPC 2019), San Antonio, USA MD 1.1 2019.09 [Refereed]

DOI

Scopus

1

Citation

(Scopus)
Temperature Characteristics of Photonic-Crystal Lasers Coupled to Si Waveguides

Koji Takeda, Takuro Fujii, Hidetaka Nishi, Eiichi Kuramochi, Akihiko Shinya, Masaya Notomi, Tai Tsuchizawa, Takaaki Kakitsuka, Shinji Matsuo

Group IV Photonics 2019 (GFP 2019), Singapore WD2 2019.08 [Refereed]

DOI
III-V/Si MOS Capacitor Mach-Zehnder Modulator with Low Temperature Sensitivity

Tatsurou Hiraki, Takuma Aihara, Koji Takeda, Takuro Fujii, Takaaki Kakitsuka, Tai Tsuchizawa, Hiroshi Fukuda, Shinji Matsuo

Group IV Photonics 2019 (GFP 2019), Singapore FC4 2019.08 [Refereed]

DOI
ANN Equalizer for Performance Improvement of PAM-M Signals Using 1.3-$\mu$m Membrane DML-on-Silicon

Nikolaos Panteleimon Diamantopoulos, Takuro Fujii, Hidetaka Nishi, Koji Takeda, Takaaki Kakitsuka, Shinji Matsuo

24th OptoElectronics and Communications Conference/International Conference Photonics in Switching and Computing 2019 (OECC/PSC 2019), Fukuoka, Japan MB-2-2 2019.07 [Refereed]

DOI

Scopus
Membrane InGaAsP Mach-Zehnder modulator with SiN:D waveguides on Si platform

Tatsurou Hiraki, Takuma Aihara, Koji Takeda, Takuro Fujii, Takaaki Kakitsuka, Tai Tsuchizawa, Hiroshi Fukuda, Shinji Matsuo

Optics Express 27 18612 - 18619 2019.06 [Refereed]

DOI PubMed

Scopus

18

Citation

(Scopus)
Artificial Neural Network Equalizers for PAM-4 Using DML-on-Silicon

Nikolaos-Panteleimon Diamantopoulos, Takuro Fujii, Hidetaka Nishi, Koji Takeda, Takaaki Kakitsuka, Shinji Matsuo

2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC), Munich, Germany CI-3.2 2019.06 [Refereed]

DOI

Scopus
Heterogeneously Integrated Low-Power-Consumption Semiconductor Optical Amplifier on Si Platform

Tatsurou Hiraki, Takuma Aihara, Koji Takeda, Takuro Fujii, Tai Tsuchizawa, Takaaki Kakitsuka, Shinji Matsuo

2019 Conference on Lasers and Electro-Optics (CLEO 2019), San Jose, USA STh3N.1 2019.05 [Refereed]

DOI

Scopus

3

Citation

(Scopus)
High-Temperature Continuous-Wave Operation of 1.3-$\mu$m Membrane Distributed Reflector Lasers on SiC

Suguru Yamaoka, Ryo Nakao, Takuro Fujii, Koji Takeda, Tatsurou Hiraki, Hidetaka Nishi, Takaaki Kakitsuka, Tai Tsuchizawa, Shinji Matsuo

2019 Conference on Lasers and Electro-Optics (CLEO 2019), San Jose, USA STu3N.6 2019.05 [Refereed]

DOI

Scopus
Single-mode Operation of 1.3-μm Membrane Distributed Reflector Lasers on SiC Wafers

Suguru Yamaoka, Ryo Nakao, Takuro Fujii, Koji Takeda, Tatsurou Hiraki, Hidetaka Nishi, Takaaki Kakitsuka, Tai Tsuchizawa, Shinji Matsuo

Compound Semiconductor Week 2019 (CSW 2019), Nara, Japan MoA3-3 2019.05 [Refereed]

DOI

Scopus
Photonic-crystal Lasers with Extremely Short Embedded Active-regions

Takuma Tsurugaya, Koji Takeda, Takuro Fujii, Eiichi Kuramochi, Akihiko Shinya, Masaya Notomi, Takaaki Kakitsuka, Hiroshi Fukuda, Shinji Matsuo

Compound Semiconductor Week 2019 (CSW 2019), Nara, Japan ThB1-3 2019.05 [Refereed]

DOI
Selective-area MOVPE growth of multi-λ InGaAlAs-based MQWs on patterned InP-on-insulator substrate

Takuro Fujii, Tomonari Sato, Koji Takeda, Takaaki Kakitsuka, Shinji Matsuo

Compound Semiconductor Week 2019 (CSW 2019), Nara, Japan ThA2-2 2019.05 [Refereed]

DOI
400-Gb/s DMT-SDM transmission based on membrane DML-array-on-silicon

Nikolaos Panteleimon Diamantopoulos, Kota Shikama, Hidetaka Nishi, Takuro Fujii, Toshiki Kishi, Koji Takeda, Yoshiteru Abe, Takashi Matsui, Takaaki Kakitsuka, Hiroshi Fukuda, Kazuhide Nakajima, Shinji Matsuo

Journal of Lightwave Technology 37 1805 - 1812 2019.04 [Refereed] [Invited]

DOI

Scopus

17

Citation

(Scopus)
III-V/Si integration technology for laser diodes and Mach-Zehnder modulators

Tatsurou Hiraki, Takuma Aihara, Koji Takeda, Takuro Fujii, Takaaki Kakitsuka, Tai Tsuchizawa, Hiroshi Fukuda, Shinji Matsuo

Japanese Journal of Applied Physics 58 SB0803 2019.03 [Refereed] [Invited]

DOI

Scopus

3

Citation

(Scopus)
56-Gbit/s Operations of Mach-Zehnder Modulators using 300-μm-Long Membrane InGaAsP Phase Shifters and SiN waveguides on Si

Takuma Aihara, Tatsurou Hiraki, Takuro Fujii, Koji Takeda, Tai Tsuchizawa, Takaaki Kakitsuka, Hiroshi Fukuda, Shinji Matsuo

2019 Optical Fiber Communications Conference and Exhibition (OFC 2019), San Diego, USA M4A.3 2019.03 [Refereed]

DOI
On the Complexity Reduction of the Second-Order Volterra Nonlinear Equalizer for IM/DD Systems

Nikolaos Panteleimon Diamantopoulos, Hidetaka Nishi, Wataru Kobayashi, Koji Takeda, Takaaki Kakitsuka, Shinji Matsuo

Journal of Lightwave Technology 37 1214 - 1224 2019.02 [Refereed]

DOI

Scopus

92

Citation

(Scopus)
Integration of eight-channel directly modulated membrane-laser array and SiN AWG multiplexer on Si

Hidetaka Nishi, Takuro Fuji, Nikolaos Panteleimon Diamantopoulos, Koji Takeda, Erina Kanno, Takaaki Kakitsuka, Tai Tsuchizawa, Hiroshi Fukuda, Shinji Matsuo

Journal of Lightwave Technology 37 266 - 273 2019.01 [Refereed]

DOI

Scopus

32

Citation

(Scopus)
Amplifierless PAM-4/PAM-8 transmissions in O-band using a directly modulated laser for optical data-center interconnects

Nikolaos Panteleimon Diamantopoulos, Wataru Kobayashi, Hidetaka Nishi, Koji Takeda, Takaaki Kakitsuka, Shinji Matsuo

Optics Letters 44 9 - 12 2019.01 [Refereed]

DOI PubMed

Scopus

13

Citation

(Scopus)
Low-operating-energy directly modulated lasers for short-distance optical interconnects

Shinji Matsuo, Takaaki Kakitsuka

Advances in Optics and Photonics 10 567 - 643 2018.09 [Refereed] [Invited]

DOI

Scopus

60

Citation

(Scopus)
Energy-Efficient 100-Gbps PAM Transmissions Using a 1.3-μm Membrane DML-on-Silicon

Nikolaos Panteleimon Diamantopoulos, Takuro Fujii, Hidetaka Nishi, Koji Takeda, Takaaki Kakitsuka, Shinji Matsuo

2018 Photonics in Switching and Computing (PSC 2018), Limassol, Cyprus Th4B4 2018.09 [Refereed]

DOI

Scopus

5

Citation

(Scopus)
Reduction of Cavity Length in λ-Scale Embedded Active-region Photonic Crystal (LEAP) Lasers

Koji Takeda, Takuro Fujii, Eiichi Kuramochi, Akihiko Shinya, Masaya Notomi, Takaaki Kakitsuka, Shinji Matsuo

IEEE 26th International Semiconductor Laser Conference (ISLC 2018), Santa Fe, USA TuD1 2018.09 [Refereed]

DOI

Scopus

1

Citation

(Scopus)
Temperature Characteristics of 1.3-μm Membrane Lasers on InP-on-Insulator Substrate

Takuro Fujii, Hidetaka Nishi, Koji Takeda, Erina Kanno, Koichi Hasebe, Tomonari Sato, Takaaki Kakitsuka, Hiroshi Fukuda, Tai Tsuchizawa, Shinji Matsuo

IEEE 26th International Semiconductor Laser Conference (ISLC 2018), Santa Fe, USA TuD8 2018.09 [Refereed]

DOI

Scopus

3

Citation

(Scopus)
Low-Operating Energy Heterogeneously Integrated Photonic-Crystal Laser on Si Waveguide

Hidetaka Nishi, Koji Takeda, Takuro Fujii, Eiichi Kuramochi, Akihiko Shinya, Masaya Notomi, Tai Tsuchizawa, Takaaki Kakitsuka, Shinji Matsuo

IEEE 26th International Semiconductor Laser Conference (ISLC 2018), Santa Fe, USA TuB3 2018.09 [Refereed]

DOI

Scopus

3

Citation

(Scopus)
Si Waveguide Integrated Membrane Buried Heterostructure DFB Laser using SiN Multiple-Phase-Shift Surface Grating

Takuma Aihara, Tatsurou Hiraki, Koji Takeda, Koichi Hasebe, Takuro Fujii, Tai Tsuchizawa, Takaaki Kakitsuka, Shinji Matsuo

IEEE 26th International Semiconductor Laser Conference (ISLC 2018), Santa Fe, USA TuB6 2018.09 [Refereed]

DOI

Scopus

1

Citation

(Scopus)
Energy-Efficient 400G SDM Transmitter Based on DMT and a 1.3-μ m Membrane DML-Array-on-Si

Nikolaos Panteleimon Diamantopoulos, Kota Shikama, Hidetaka Nishi, Takuro Fujii, Toshiki Kishi, Koji Takeda, Yoshiteru Abe, Takashi Matsui, Takaaki Kakitsuka, Hiroshi Fukuda, Kazuhide Nakajima, Shinji Matsuo

44th European Conference on Optical Communications (ECOC 2018), Roma, Italy Tu3E.3 2018.09 [Refereed]

DOI

Scopus

2

Citation

(Scopus)
Heterogeneously Integrated Mach-Zehnder Modulator Using Membrane InGaAsP Phase Shifter and Hydrogen-Free SiN Waveguide on Si Platform

Tatsurou Hiraki, Takuma Aihara, Takuro Fujii, Koji Takeda, Tai Tsuchizawa, Takaaki Kakitsuka, Hiroshi Fukuda, Shinji Matsuo

44th European Conference on Optical Communications (ECOC 2018), Roma, Italy Mo3C.1 2018.09 [Refereed]

DOI

Scopus

4

Citation

(Scopus)
1-fJ/bit Direct Modulation of Photonic-Crystal Lasers

Koji Takeda, Takuro Fujii, Akihiko Shinya, Masaya Notomi, Takaaki Kakitsuka, Shinji Matsuo

44th European Conference on Optical Communications (ECOC 2018), Roma, Italy Tu1A.5 2018.09 [Refereed]

DOI

Scopus

2

Citation

(Scopus)
Heteroepitaxial growth of GaAs/Ge buffer layer on Si for metamorphic InGaAs lasers

Ryo Nakao, Masakazu Arai, Takaaki Kakitsuka, Shinji Matsuo

IEICE Transactions on Electronics E101C 537 - 544 2018.07 [Refereed] [Invited]

DOI

Scopus
Single Mode Operation of Multiple Phase-Shift Grating Membrane Buried Heterostructure Lasers Integrated on Silicon Nanowire Waveguide

T. Aihara, T. Hiraki, K. Takeda, K. Hasebe, T. Fujii, T. Tsuchizawa, T. Kakitsuka, S. Matsuo

The Compound Semiconductor Week 2018 including the 45th International Symposium on Compound Semiconductors (ISCS 2018) and the 30th International Conference on Indium Phosphide and Related Materials (IPRM 2018), Cambridge, USA We2A2.2 2018.05 [Refereed]
32-Gbit/s Heterogeneously Integrated Mach-Zehnder Modulator with 250μm-long III-V/Si MOS-capacitor Phase Shifter

Tatsurou Hiraki, Takuma Aihara, Koichi Hasebe, Takuro Fujii, Koji Takeda, Takaaki Kakitsuka, Tai Tsuchizawa, Hiroshi Fukuda, Shinji Matsuo

European Conference on Optical Communication, ECOC 2017- 1 - 3 2018.04 [Refereed]

　View Summary

A heterogeneously integrated InGaAsP/Si MOS-capacitor Mach-Zehnder (MZ) modulator achieves around four times smaller VπL (0.09 Vcm) than that of the conventional Si MOS-capacitor MZ modulators. The eye opened at 32 Gbit/s using a 250μm-long phase shifter.

DOI

Scopus

2

Citation

(Scopus)
56-Gb/s VSB-PAM-4 over 80-km Using 1550-nm EA-DFB Laser and Reduced-Complexity Nonlinear Equalization

Nikolaos-Panteleimon DIamantopoulos, Wataru Kobayashi, Hidetaka Nishi, Koji Takeda, Takaaki Kakitsuka, Shinji Matsuo

European Conference on Optical Communication, ECOC 2017- 1 - 3 2018.04 [Refereed]

　View Summary

Enabled by vestigial sideband modulation (VSB) and low-complexity nonlinear equalization, 28-GBaud PAM-4 is demonstrated using electro-absorption modulated laser and pin-photodiode at 80-km of standard single-mode fiber. The proposed scheme targets low-cost solutions for data-center interconnects and extended-reach 400GbE links.

DOI

Scopus

15

Citation

(Scopus)
Membrane Buried Heterostrucutre Lasers Integrated on Silicon Nanowire Waveguide

T. Aihara, T. Hiraki, K. Takeda, K. Hasebe, T. Fujii, T. Tsuchizawa, T. Kakitsuka, S. Matsuo

International Conference on Nano-photonics and Nano-optoelectronics 2018 (ICNN 2018), Tokyo, Japan ICNN6-2 2018.04 [Refereed]
Twin-mirror membrane distributed-reflector lasers using 20-μm-long active region on Si substrates

Erina Kanno, Koji Takeda, Takuro Fujii, Koichi Hasebe, Hidetaka Nishi, Tsuyoshi Yamamoto, Takaaki Kakitsuka, Shinji Matsuo

Optics Express 26 ( 2 ) 1268 - 1277 2018.01 [Refereed]

　View Summary

We demonstrate 20-μm-long twin-mirror membrane distributed-reflector (DR) lasers for chip-to-chip optical interconnects. The lasers employ distributed Bragg reflectors (DBRs) at both ends of a 20-μm-long λ/4-phase shifted distributed feedback (DFB) section. We achieve single-mode lasing in a λ/4-phase shifted DFB mode at room temperature with a threshold current of 0.39 mA. The lasing wavelength remains stable while the injected current is varied, and it is determined by the λ/4 phase-shifted DFB. The modulation current efficiency is 11.4 GHz/mA1/2, which is measured by using relative intensity noise spectra. We also demonstrate the direct modulation of the DR lasers at a bit rate of 25.8 Gbit/s with an energy cost of 163 fJ/bit.

DOI

Scopus

8

Citation

(Scopus)
Heterogeneously Integrated Membrane Lasers on Si Substrate for Low Operating Energy Optical Links

Takuro Fujii, Koji Takeda, Nikolaos-Panteleimon Diamantopoulos, Erina Kanno, Koichi Hasebe, Hidetaka Nishi, Ryo Nakao, Takaaki Kakitsuka, Shinji Matsuo

IEEE Journal of Selected Topics in Quantum Electronics 24 ( 1 ) 2018.01 [Refereed] [Invited]

　View Summary

High demand exists for low operating energy optical links that use wavelength division multiplexing technologies in datacenter networks. Thus, we fabricate a directly modulated membrane distributed-reflector laser with low operating energy on a thermally oxidized silicon (Si) substrate. Because we use epitaxial growth to bury an active region on a directly bonded InP-based membrane, it needs to be kept within a critical thickness, which is related to the growth temperature and the thermal expansion coefficients of materials. In previous studies, we used 250-nm-thick structures, causing relatively large series resistance that limited device performance on such aspects as energy cost and output power. In this study, we increase the III-V membrane thickness to 350 nm, which is close to the calculated critical thicknesses. We achieve the same high crystal quality of multiquantum-wells found in our previous studies. The fabricated laser shows a differential resistance of 72 Ω and thermal resistance of 982 K/W. Thanks to a reduction in bias voltage, the laser can be directly modulated at 25.8 Gbit/s with an energy cost of 97 fJ/bit. In addition, due to a reduction in heat generation, direct modulation with a 50-Gbit/s non return to zero signal is demonstrated by increasing bias current up to 10 mA.

DOI

Scopus

43

Citation

(Scopus)
Monolithic integration of an 8-channel directly modulated membrane-laser array and a SiN AWG filter on Si

Hidetaka Nishi, Takuro Fujii, Nikolaos-Panteleimon Diamantopoulos, Koji Takeda, Erina Kanno, Takaaki Kakitsuka, Tai Tsuchizawa, Hiroshi Fukuda, Shinji Matsuo

2018 Optical Fiber Communications Conference and Exposition (OFC 2018), San Diego, USA 2018 Th3B.2 2018 [Refereed]

　View Summary

Eight-channel 56-Gbit/s PAM-4 direct modulations are demonstrated using a 1.3-μm WDM transmitter, consisting of membrane lasers and a SiN AWG filter. Direct bonding, epitaxial regrowth, and low-temperature SiN deposition are employed for integration on Si.

DOI

Scopus
A 137-mW, 4 ch x 25-Gbps low-power compact transmitter Flip-Chip-Bonded 1.3-μm LD-Array-on-Si

Toshiki Kishi, Munehiko Nagatani, Shigeru Kanazawa, Shinsuke Nakano, Hiroaki Katsurai, Takuro Fujii, Hidetaka Nishi, Takaaki Kakitsuka, Koichi Hasebe, Kota Shikama, Yuko Kawajiri, Atsushi Aratake, Hideyuki Nosaka, Hiroshi Fukuda, Shinji Matsuo

Optics InfoBase Conference Papers 2018 M2D.2 2018 [Refereed]

　View Summary

A low-power compact 4-channel transmitter consisting of a 65-nm CMOS cascode shunt LD driver and flip-chip-bonded 1.3-μm LD-array-on-Si achieves 25-Gbps 2-km-long SSMF error-free operation for each channel, with power consumption of 1.37 mW/Gbps.

DOI

Scopus
Lateral current injection membrane buried heterostructure lasers integrated on 200-nm-thick Si waveguide

Takuma Aihara, Tatsurou Hiraki, Koji Takeda, Koichi Hasebe, Takuro Fujii, Tai Tsuchizawa, Takaaki Kakitsuka, Shinji Matsuo

2018 Optical Fiber Communications Conference and Exposition (OFC 2018), San Diego, USA 2018 W3F.4 2018 [Refereed]

　View Summary

Heterogeneous integration of lasers and 200-nm-thick Si waveguides is the key to realizing high-performance transmitters. A 500-μm-long DFB laser on Si waveguide exhibits 4.6-mW fiber coupled output power at 25°C and lasing up to 130°C.

DOI

Scopus

1

Citation

(Scopus)
Energy-efficient 120-Gbps DMT transmission using a 1.3-μm membrane laser on Si

Nikolaos-Panteleimon Pandelis Diamantopoulos, Takuro Fujii, Hidetaka Nishi, Koji Takeda, Takaaki Kakitsuka, Shinji Matsuo

Optics InfoBase Conference Papers 2018 M2D.5 2018 [Refereed]

　View Summary

We report DMT transmissions of 120-Gbps over 10-km SSMF (for SD-FEC) and 100-Gbps over 2-km (for HD-FEC), by directly modulating a single-mode membrane laser grown on an InP/SiO2/Si substrate, requiring only 28.2 mW for driving.

DOI

Scopus
Heterogeneously integrated III-V/Si MOS capacitor Mach-Zehnder modulator

Tatsurou Hiraki, Takuma Aihara, Koichi Hasebe, Koji Takeda, Takuro Fujii, Takaaki Kakitsuka, Tai Tsuchizawa, Hiroshi Fukuda, Shinji Matsuo

NATURE PHOTONICS 11 ( 8 ) 482 - + 2017.08 [Refereed]

　View Summary

Demand for more transmission capacity in data centres is increasing due to the continuous growth of Internet traffic. The introduction of external modulators into datacom networks is essential with advanced modulation formats. However, the large footprint of silicon photonics Mach-Zehnder (MZ) modulators will limit further increases in transmission capacity(1-4). To overcome this, we introduce III-V compound semiconductors because the large electron-induced refractive-index change, high electron mobility and low carrier-plasma absorption are beneficial for overcoming the trade-offs among the voltage-length product (V pi L), operation speed and insertion loss of Si MZ modulators. Here, we demonstrate an MZ modulator with a 250-mu m-long InGaAsP/Si metal-oxide-semiconductor (MOS) capacitor phase-shifter and obtain a VpL of 0(pi)09 Vcm in accumulation mode, an insertion loss of similar to 1.0 dB, a cutoff frequency of similar to 2.2 GHz in depletion mode and a 32-Gbit s(-1) modulation with signal pre-emphasis. These results are promising for fabricating high-capacity large-scale photonic integrated circuits with low power consumption.

DOI
Si nanowire waveguide coupled current-driven photonic-crystal lasers

Koji Takeda, Takuro Fujii, Akihiko Shinya, Tai Tsuchizawa, Hidetaka Nishi, Eiichi Kuramochi, Masaya Notomi, Koichi Hasebe, Takaaki Kakitsuka, Shinji Matsuo

2017 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO Europe 2017), Munich, Germany CK-9.4 2017.06 [Refereed]

DOI
Silicon nanowire waveguide integrated membrane buried heterostructure lasers

T. Aihara, T. Hiraki, K. Hasebe, T. Fujii, K. Takeda, H. Nishi, T. Tsuchizawa, T. Kakitsuka, S. Matsuo

The 44th International Conference on Indium Phosphide and Related Materials (IPRM 2017), Berlin, Germany C6.2.1 2017.05 [Refereed]
Countinous-Wave Operation of Photonic Crystal Lasers Coupled to Waveguides

K. Takeda, T. Fujii, A. Shinya, T. Tsuchizawa, H. Nishi, E. Kuramochi, M. Notomi, K. Hasebe, T. Kakitsuka, S. Matsuo

2017 OPTICS & PHOTONICS International Congress (OPIC 2017), International Conference on Nano-photonics and Nano-optoelectronics, Yokohama, Japan ICNN-2-3 2017.04 [Refereed]
Heterogeneously integrated InP/Si metal-oxidesemiconductor capacitor mach-zehnder modulator

Tatsurou Hiraki, Takuma Aihara, Koichi Hasebe, Takuro Fujii, Koji Takeda, Tai Tsuchizawa, Takaaki Kakitsuka, Hiroshi Fukuda, Shinji Matsuo

2017 Optical Fiber Communications Conference and Exhibition (OFC 2017), Los Angeles, USA W3E.1 2017.03 [Refereed]

DOI

Scopus

1

Citation

(Scopus)
Evaluation of Device Parameters for Membrane Lasers on Si Fabricated with Active-Layer Bonding Followed by Epitaxial Growth

Takuro Fujii, Koji Takeda, Erina Kanno, Koichi Hasebe, Hidetaka Nishi, Tsuyoshi Yamamoto, Takaaki Kakitsuka, Shinji Matsuo

IEICE TRANSACTIONS ON ELECTRONICS E100C ( 2 ) 196 - 203 2017.02 [Refereed]

　View Summary

We have developed membrane distributed Bragg reflector (DBR) lasers on thermally oxidized Si substrate (SiO2/Si substrate) to evaluate the parameters of the on-Si lasers we have been developing. The lasers have InGaAsP-based multi-quantum wells (MQWs) grown on InP substrate. We used direct bonding to transfer this active epitaxial layer to SiO2/Si substrate, followed by epitaxial growth of InP to fabricate a buried-heterostructure (BH) on Si. The lateral p-i-n structure was formed by thermal diffusion of Zn and ion implantation of Si. For the purpose of evaluating laser parameters such as internal quantum efficiency and internal loss, we fabricated long-cavity lasers that have 200-to 600-mu m-long active regions. The fabricated DBR lasers exhibit threshold currents of 1.7, 2.1, 2.8, and 3.7 mA for active-region lengths of 200, 300, 400, and 600 mu m, respectively. The differential quantum efficiency also depends on active-region length. In addition, the laser characteristics depend on the distance between active region and p-doped region. We evaluated the internal loss to be 10.2 cm(-1) and internal quantum efficiency to be 32.4% with appropriate doping profile.

DOI

Scopus

4

Citation

(Scopus)
40-km SSMF transmission of 56/64-Gb/s PAM-4 signals using 1.3-μm directly modulated laser and PIN photodiode

Nikolaos-Panteleimon Diamantopoulos, Wataru Kobayashi, Hidetaka Nishi, Koji Takeda, Takaaki Kakitsuka, Shinji Matsuo

Optics InfoBase Conference Papers 2017 PW2D.4 2017 [Refereed]

　View Summary

For low-cost reach extension of 400G Ethernet, &gt
50-Gb/s PAM-4 at 1.3-μm over 40- km is demonstrated without optical amplification, enabled by a high-speed and high launch power directly modulated laser, PIN-photodiode, and low-complexity equalization.

DOI

Scopus
Heterogeneously integrated lasers using epitaxially grown III-V active layer on directly bonded InP/SiO$_2$/Si substrate

Takuro Fujii, Koji Takeda, Erina Kanno, Koichi Hasebe, Hidetaka Nishi, Tsuyoshi Yamamoto, Takaaki Kakitsuka, Shinji Matsuo

2016 IEEE Photonics Conference (IPC 2016), Waikoloa Village, USA WC1.5 2016.10 [Refereed]

DOI

Scopus

3

Citation

(Scopus)
Low operating-energy directly modulated membrane distributed-reflector lasers on Si

Takuro Fujii, Koji Takeda, Erina Kanno, Koichi Hasebe, Hidetaka Nishi, Ryo Nakao, Tsuyoshi Yamamoto, Takaaki Kakitsuka, Shinji Matsuo

42nd European Conference and Exhibition on Optical Communication (ECOC 2016), Dusseldorf, Germany W4P1SC2-1 2016.09 [Refereed]
1.3-μm Directly Modulated Membrane Laser Array Employing Epitaxial Growth of InGaAlAs MQW on InP/SiO2/Si Substrate

Takuro Fujii, Koji Takeda, Erina Kanno, Koichi Hasebe, Hidetaka Nishi, Ryo Nakao, Tsuyoshi Yamamoto, Takaaki Kakitsuka, Shinji Matsuo

42nd European Conference and Exhibition on Optical Communication (ECOC 2016), Dusseldorf, Germany Post Deadline Paper Th.3.A.2 2016.09 [Refereed]
Membrane distributed-reflector lasers with 20-μm-long DFB section and front/rear DBRs on Si substrates

Erina Kanno, Koji Takeda, Takuro Fujii, Koichi Hasebe, Hidetaka Nishi, Tsuyoshi Yamamoto, Takaaki Kakitsuka, Shinji Matsuo

The 25th International Semiconductor Laser Conference (ISLC 2016), Kobe, Japan ThB7 2016.09 [Refereed]
Membrane distributed-reflector laser integrated with SiOx-based spot-size converter on Si substrate

Hidetaka Nishi, Takuro Fujii, Koji Takeda, Koichi Hasebe, Takaaki Kakitsuka, Tai Tsuchizawa, Tsuyoshi Yamamoto, Koji Yamada, Shinji Matsuo

OPTICS EXPRESS 24 ( 16 ) 18346 - 18352 2016.08 [Refereed]

　View Summary

We demonstrate monolithic integration of a 50-mu m-long-cavity membrane distributed-reflector laser with a spot-size converter, consisting of a tapered InP wire waveguide and an SiOx waveguide, on SiO2/Si substrate. The device exhibits 9.4-GHz/mA(0.5) modulation efficiency with a 2.2-dB fiber coupling loss. We demonstrate 25.8-Gbit/s direct modulation with a bias current of 2.5 mA, resulting in a low energy cost of 132 fJ/bit. (C) 2016 Optical Society of America

DOI

Scopus

45

Citation

(Scopus)
Continuous-wave operation of ultra-short cavity distributed bragg reflector lasers on Si substrates

Koji Takeda, Erina Kanno, Takuro Fujii, Koichi Hasebe, Tsuyoshi Yamamoto, Takaaki Kakitsuka, Shinji Matsuo

2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016, Toyama, Japan ThD1-2 2016.06 [Refereed]

DOI

Scopus

3

Citation

(Scopus)
Growth of InGaAsP-based MQW layer on InP template bonded to Si substrate for fabricating membrane lasers

Takuro Fujii, Koji Takeda, Erina Kanno, Hidetaka Nishi, Koichi Hasebe, Tsuyoshi Yamamoto, Takaaki Kakitsuka, Shinji Matsuo

2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016, Toyama, Japan TuD3-2 2016.06 [Refereed]

DOI

Scopus

1

Citation

(Scopus)
Design and fabrication of directly-modulated 1.3-μm lateral-current-injection lasers

Koichi Hasebe, Junichi Nishinaka, Takuro Fujii, Koji Takeda, Tsuyoshi Yamamoto, Takaaki Kakitsuka, Shinji Matsuo

2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016, Toyama, Japan ThD1-5 2016.06 [Refereed]

DOI

Scopus
Photonic Crystal Lasers for Chip-to-Chip and On-Chip Optical Interconnects

Tomonari Sato, Koji Takeda, Akihiko Shinya, Masaya Notomi, Koichi Hasebe, Takaaki Kakitsuka, Shinji Matsuo

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS 21 ( 6 ) 2015.11 [Refereed] [Invited]

　View Summary

A directly modulated photonic crystal (PhC) laser with a wavelength-scale cavity is a key component for chip-to-chip and on-chip optical interconnections because it enables us to achieve ultralow operating energy. A buried heterostructure, where the wavelength-scale active region is buried with an InP layer, is essential for achieving ultralow operating energy because it improves both carrier and photon confinement in the active region and the InP layer improves the thermal conductivity of the device. We call this a lambda-scale embedded active-region PhC, or LEAP, laser. We have already developed an electrically driven LEAP laser with a threshold current of 4.8 mu A and operating energy of 4.4 fJ/bit. However, to employ the LEAP laser in chip-to-chip optical interconnects, the output power should be increased. To increase it, we increase the number of multiple quantum wells and reduce the device series resistance. The device exhibits 39.3-mu W output power with threshold current of 36 mu A. As a result, we measure the bit error rate with 10-Gb/s signal without using an optical amplifier. For an on-chip optical interconnect, the monolithic integration of a laser, waveguide, and photodetector is the main issue because on-chip optical interconnect requires extremely small energy consumption to overcome its electrical counterpart; therefore, unwanted optical loss such as coupling loss should be minimized. We have fabricated amonolithic optical link, in which a LEAP laser exhibits a threshold current of 22 mu A. The integrated optical link operates at an ultralow energy of 28.5 fJ/bit. These results indicate that the LEAP laser is highly suitable for use as a transmitter in computercom applications.

DOI

Scopus

30

Citation

(Scopus)
Membrane distributed-reflector laser integrated with SiO$_x$-based spot-size converter on Si platform

Hidetaka Nishi, Takuro Fujii, Koji Takeda, Koichi Hasebe, Takaaki Kakitsuka, Tai Tsuchizawa, Tsuyoshi Yamamoto, Koji Yamada, Shinji Matsuo

European Conference on Optical Communications (ECOC 2015),Valencia, Spain We.2.5.3 2015.09 [Refereed]

DOI

Scopus

3

Citation

(Scopus)
Epitaxial growth of InP to bury directly bonded thin active layer on SiO2/Si substrate for fabricating distributed feedback lasers on silicon

Takuro Fujii, Tomonari Sato, Koji Takeda, Koichi Hasebe, Takaaki Kakitsuka, Shinji Matsuo

IET OPTOELECTRONICS 9 ( 4 ) 151 - 157 2015.08 [Refereed] [Invited]

　View Summary

The authors have developed a new heterogeneous-integration method for fabricating semiconductor lasers with high modulation efficiency on Si substrates. The method employs the direct bonding of an InP-based active layer to the SiO2 layer of a thermally oxidised Si substrate (SiO2/Si substrate), followed by the epitaxial growth of InP to form a buried heterostructure (BH). By using the InP membrane, the authors realise epitaxial growth of an InP on the InP membrane directly bonded to Si without crystal quality degradation. Both a theoretical estimation and photoluminescence measurements revealed that the total laser thickness must be less than the critical thickness determined by the applied thermal strain. The authors confirmed that the crystal quality of the BH is comparable to that fabricated on an InP substrate when using a 250-nm-thick InP-based membrane. A distributed feedback laser fabricated on a SiO2/Si substrate exhibited continuous-wave operation up to 100 degrees C and was directly modulated by a 40 Gbit/s non-return-to-zero signal with a bias current of 15 mA. These results indicate that epitaxial growth using a directly bonded InP-based active layer on a SiO2/Si substrate allows us to achieve lasers with high modulation efficiency and to use a large-scale Si wafer as a fabrication platform, resulting in low-cost fabrication.

DOI

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53

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(Scopus)
Directly Modulated DFB Laser on SiO2/Si Substrate for Datacenter Networks

Shinji Matsuo, Takuro Fujii, Koichi Hasebe, Koji Takeda, Tomonari Sato, Takaaki Kakitsuka

JOURNAL OF LIGHTWAVE TECHNOLOGY 33 ( 6 ) 1217 - 1222 2015.03 [Refereed] [Invited]

　View Summary

Reducing the operating energy of a distributed feedback (DFB) laser is a critical issue if we are to use the device as a directly modulated light source employing wavelength division multiplexing technologies in short-distance datacom networks. A membrane buried heterostructure (BH) DFB laser on a SiO2 layer is one candidate for reducing the operating energy because it provides a strong carrier and optical confinement in the active region. For low-cost fabrication, we have proposed and developed a fabrication procedure that employs the buried growth of an InP layer by using a directly bonded InP-based active layer on a SiO2/Si substrate, which enables us to use a large-scale Si wafer. To overcome the problem of the difference between the thermal expansion coefficients of Si, SiO2, and InP, we have used a thin active layer (similar to 250 nm) on a SiO2/Si substrate as a template for the epitaxial growth of a III-V compound semiconductor. A lateral current injection structure is essential for fabricating a device with a 250-nm-thick template. Our fabricated DFB laser with a 73-mu m cavity length exhibits a threshold current of 0.9 mA for continuous operation at room temperature and achieves lasing at up to 100 degrees C. We have also demonstrated 171-fJ/bit operation with a 25.8-Gb/s NRZ signal. These results indicate that the BH DFB laser on a SiO2/Si substrate is highly suitable for use as a transmitter for datacom applications.

DOI

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42

Citation

(Scopus)
High-Speed Modulation of Lateral p-i-n Diode Structure Electro-Absorption Modulator Integrated With DFB Laser

Koichi Hasebe, Tomonari Sato, Koji Takeda, Takuro Fujii, Takaaki Kakitsuka, Shinji Matsuo

JOURNAL OF LIGHTWAVE TECHNOLOGY 33 ( 6 ) 1235 - 1240 2015.03 [Refereed] [Invited]

　View Summary

Large-scale photonic integrated circuits (PICs) are essential for reducing the cost and power consumption of optical networks. Selective doping by means of thermal diffusion and ion implantation is suitable for fabricating PICs because it enables doping into desired regions without crystal growth. In this paper, we report the fabrication of a lateral-p-i-n-diode-structure electro-absorption modulator (EAM) integrated with a DFB (EADFB) laser. Owing to the lateral p-i-n structure, we are able to use the broadening of the exciton absorption peak that occurs when the electric field is applied parallel to the quantum well. By comparing the calculated absorption spectrum change for parallel and vertical electric fields, we found that it occurs with a low electrical field, although the amount of absorption coefficient change is small for the parallel one. Thus, in our design, we make the EAM length larger than that of the conventional vertical electric field EAM. However, because of the low parasitic capacitance of the lateral EAM, we can expect to achieve high-speed operation. With a fabricated device with a 200-mu m-long EAM, we have achieved 50-Gb/s operation with clear eye opening. We have also achieved a side-mode suppression ratio of more than 50 dB by using a surface grating. These results indicate that our lateral EADFB laser is very promising as an integrated light source for large-scale PICs and that our fabrication process based on selective doping is suitable for them.

DOI

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10

Citation

(Scopus)
Heterogeneously integrated photonic-crystal lasers on silicon for on/off chip optical interconnects

Koji Takeda, Tomonari Sato, Takuro Fujii, Eiichi Kuramochi, Masaya Notomi, Koichi Hasebe, Takaaki Kakitsuka, Shinji Matsuo

OPTICS EXPRESS 23 ( 2 ) 702 - 708 2015.01 [Refereed]

　View Summary

We demonstrate the continuous-wave operation of lambda-scale embedded active-region photonic-crystal (LEAP) lasers at room temperature, which we fabricated on a Si wafer. The on-Si LEAP lasers exhibit a threshold current of 31 mu A, which is the lowest reported value for any type of semiconductor laser on Si. This reveals the great potential of LEAP lasers as light sources for on- or off-chip optical interconnects with ultra-low power consumption in future information communication technology devices including CMOS processors. (C) 2015 Optical Society of America

DOI
Push-pull driven electro-absorption modulator integrated with DFB laser using selectively doped lateral pin diode structure

Koichi Hasebe, Tomonari Sato, Koji Takeda, Shigeru Kanazawa, Takuro Fujii, Takaaki Kakitsuka, Shinji Matsuo

2014 IEEE International Semiconductor Laser Conference (ISLC 2014), Palma de Mallorca, Spain MD4 2014.09 [Refereed]

DOI

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2

Citation

(Scopus)
50-Gbit/s operation of lateral pin diode structure electro-absorption modulator integrated DFB laser

Koichi Hasebe, Tomonari Sato, Koji Takeda, Takuro Fujii, Takaaki Kakitsuka, Shinji Matsuo

2014 European Conference on Optical Communication (ECOC 2014), Cannes, France Mo.4.4.2 2014.09 [Refereed]

DOI

Scopus

1

Citation

(Scopus)
25-Gbit/s direct modulation of photonic-crystal lasers with a 10.5-fJ/bit energy cost for on/off-chip optical interconnects

Koji Takeda, Tomonari Sato, Takuro Fujii, Akihiko Shinya, Eiichi Kuramochi, Masaya Notomi, Koichi Hasebe, Takaaki Kakitsuka, Shinji Matsuo

2014 European Conference on Optical Communication (ECOC 2014), Cannes, France Tu.1.7.2 2014.09 [Refereed]

DOI

Scopus

1

Citation

(Scopus)
Ultralow operating energy of directly modulated DFB laser on SiO$_2$/Si substrate

Shinji Matsuo, Takuro Fujii, Koichi Hasebe, Koji Takeda, Tomonari Sato, Takaaki Kakitsuka

2014 European Conference on Optical Communication (ECOC 2014), Cannes, France Mo.4.4.3 2014.09 [Refereed]

DOI

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2

Citation

(Scopus)
40-Gbit/s direct modulation of membrane buried heterostructure DFB laser on SiO2/Si substrate

Shinji Matsuo, Takuro Fujii, Koichi Hasebe, Koji Takeda, Tomonari Sato, Takaaki Kakitsuka

2014 IEEE International Semiconductor Laser Conference (ISLC 2014), Palma de Mallorca, Spain MB1 2014.09 [Refereed]

DOI

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5

Citation

(Scopus)
Error-free 25-Gbit/s direct modulation of lateral-currentinjection DFB laser

Koichi Hasebe, Tomonari Sato, Koji Takeda, Takuro Fujii, Takaaki Kakitsuka, Shinji Matsuo

2014 Conference on Lasers and Electro-Optics (CLEO 2014), San Jose, USA STh1G 2014.06 [Refereed]

DOI
Electrically driven photonic-crystal lasers on silicon substrates using direct wafer bonding

Koji Takeda, Tomonari Sato, Takuro Fujii, Eiichi Kuramochi, Masaya Notomi, Koichi Hasebe, Takaaki Kakitsuka, Shinji Matsuo

2014 Conference on Lasers and Electro-Optics (CLEO 2014), San Jose, USA SW3G 2014.06 [Refereed]

DOI
Directly modulated buried heterostructure DFB laser on SiO2/Si substrate fabricated by regrowth of InP using bonded active layer

Shinji Matsuo, Takuro Fujii, Koichi Hasebe, Koji Takeda, Tomonari Sato, Takaaki Kakitsuka

OPTICS EXPRESS 22 ( 10 ) 12139 - 12147 2014.05 [Refereed]

　View Summary

We describe the growth of InP layer using an ultrathin III-V active layer that is directly bonded to SiO2/Si substrate to fabricate a buried heterostructure (BH) laser. Using a 250-nm-thick bonded active layer, we succeeded in fabricating a BH distributed feedback (DFB) laser on SiO2/Si substrate. The use of a lateral current injection structure is important for forming a p-i-n junction using bonded thin film. The fabricated DFB laser is directly modulated by a 25.8-Gbit/s NRZ signal at 50 degrees C. These results indicate that our fabrication method is a promising way to fabricate highefficiency lasers at a low cost. (C)2014 Optical Society of America

DOI

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132

Citation

(Scopus)
InGaAsP/InP buried heterostruture on SiO$_2$/Si substrate using epitaxial growth after direct bonding of thin active layer

Takuro Fujii, Tomonari Sato, Koji Takeda, Koichi Hasebe, Takaaki Kakitsuka, Shinji Matsuo

2014 International Conference on Indium Phosphide and Related Materials (IPRM 2014), Montpellier, France Mo-A2-4 2014.05 [Refereed]

DOI

Scopus

2

Citation

(Scopus)
Photonic crystal lasers using wavelength-scale embedded active region

Shinji Matsuo, Tomonari Sato, Koji Takeda, Akihiko Shinya, Kengo Nozaki, Eiichi Kuramochi, Hideaki Taniyama, Masaya Notomi, Takuro Fujii, Koichi Hasebe, Takaaki Kakitsuka

JOURNAL OF PHYSICS D-APPLIED PHYSICS 47 ( 2 ) ,023001 2014.01 [Refereed] [Invited]

　View Summary

Lasers with ultra-low operating energy are desired for use in chip-to-chip and on-chip optical interconnects. If we are to reduce the operating energy, we must reduce the active volume. Therefore, a photonic crystal (PhC) laser with a wavelength-scale cavity has attracted a lot of attention because a PhC provides a large Q-factor with a small volume. To improve this device's performance, we employ an embedded active region structure in which the wavelength-scale active region is buried with an InP PhC slab. This structure enables us to achieve effective confinement of both carriers and photons, and to improve the thermal resistance of the device. Thus, we have obtained a large external differential quantum efficiency of 55% and an output power of -10 dBm by optical pumping. For electrical pumping, we use a lateral p-i-n structure that employs Zn diffusion and Si ion implantation for p-type and n-type doping, respectively. We have achieved room-temperature continuous-wave operation with a threshold current of 7.8 mu A and a maximum 3 dB bandwidth of 16.2 GHz. The results of an experimental bit error rate measurement with a 10 Gbit s(-1) NRZ signal reveal the minimum operating energy for transferring a single bit of 5.5 fJ. These results show the potential of this laser to be used for very short reach interconnects. We also describe the optimal design of cavity quality (Q) factor in terms of achieving a large output power with a low operating energy using a calculation based on rate equations. When we assume an internal absorption loss of 20 cm(-1), the optimized coupling Q-factor is 2000.

DOI

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36

Citation

(Scopus)
Single-mode lasing of Lambda-scale Embedded Active-region Photonic-crystal (LEAP) laser with in-line coupled waveguide

A. Shinya, T. Sato, K. Takeda, K. Nozaki, E. Kuramochi, T. Kakitsuka, H. Taniyama, T. Fujii, S. Matsuo, M. Notomi

2013 IEEE Photonics Conference (IPC 2013), Bellevue, USA WD3.4 2013.09 [Refereed]

DOI

Scopus

2

Citation

(Scopus)
Ultralow Operating Energy Electrically Driven Photonic Crystal Lasers

Shinji Matsuo, Tomonari Sato, Koji Takeda, Akihiko Shinya, Kengo Nozaki, Hideaki Taniyama, Masaya Notomi, Koichi Hasebe, Takaaki Kakitsuka

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS 19 ( 4 ) 4900311 2013.07 [Refereed] [Invited]

　View Summary

The introduction of the photonic crystal (PhC) wavelength-scale cavity as a laser cavity enables us to obtain both ultralow threshold current and operating energy. These parameters are essential when using the transmitters in chip-to-chip and on-chip interconnections. To improve the device performance, we employ an ultracompact embedded active region that we call a lambda-scale embedded active-region PhC laser or LEAP laser. We have developed an electrically driven LEAP laser, which operates under room-temperature continuous-wave conditions. To fabricate the electrically driven LEAP laser, we used Zn thermal diffusion and Si ion implantation, respectively, for p-type and n-type doping in an undoped InP layer. However, with previous fabricated devices there was a large leakage current through the substrate and the threshold current was 0.39 mA, which is larger than the expected threshold obtained by optical pumping. To reduce the leakage current, we propose using an InAlAs sacrificial laser instead of an InGaAs layer. The leakage current path through the substrate is effectively suppressed, and as a result, the threshold current is reduced to 7.8 mu A, which is the lowest threshold current reported for any laser. Furthermore, the LEAP laser operates at up to 95 degrees C by using an InGaAlAs-based multiple quantum well structure. We also describe the dynamic characteristics of the laser. The LEAP laser exhibits a maximum 3-dB bandwidth of 16.2 GHz and the modulation current efficiency factor is 53.8 GHz/mA(0.5) or 1.7 GHz/mu A(0.5), which is four times that of a vertical cavity surface-emitting laser. The device is directly modulated by a 12.5-Gb/s nonreturn-to-zero signal with a bias voltage of 1.6 V and a bias current of 109 mu A, resulting in an energy cost of 14.0 fJ/b. This is the smallest operating energy for any laser. These results indicate that the LEAP laser is highly suitable for use as a transmitter in computercom applications.

DOI

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64

Citation

(Scopus)
Few-fJ/bit data transmissions using directly modulated lambda-scale embedded active region photonic-crystal lasers

Koji Takeda, Tomonari Sato, Akihiko Shinya, Kengo Nozaki, Wataru Kobayashi, Hideaki Taniyama, Masaya Notomi, Koichi Hasebe, Takaaki Kakitsuka, Shinji Matsuo

NATURE PHOTONICS 7 ( 7 ) 569 - 575 2013.07 [Refereed]

　View Summary

A low operating energy is needed for nanocavity lasers designed for on-chip photonic network applications. On-chip nanocavity lasers must be driven by current because they act as light sources driven by electronic circuits. Here, we report the high-speed direct modulation of a lambda-scale embedded active region photonic-crystal (LEAP) laser that holds three records for any type of laser operated at room temperature: a low threshold current of 4.8 mu A, a modulation current efficiency of 2.0 GHz mu A(-0.5) and an operating energy of 4.4 fJ bit(-1). Five major technologies make this performance possible: a compact buried heterostructure, a photonic-crystal nanocavity, a lateral p-n junction realized by ion implantation and thermal diffusion, an InAlAs sacrificial layer and current-blocking trenches. We believe that an output power of 2.17 mu W and an operating energy of 4.4 fJ bit(-1) will enable us to realize on-chip photonic networks in combination with the recently developed highly sensitive receivers.

DOI
17-Gb/s direct modulation of lambda-scale embedded active region photonic crystal lasers

Koji Takeda, Tomonari Sato, Akihiko Shinya, Kengo Nozaki, Hideaki Taniyama, Koichi Hasebe, Takaaki Kakitsuka, Masaya Notomi, Shinji Matsuo

2013 International Conference on Indium Phosphide and Related Materials (IPRM 2013), Kobe, Japan WeD2-2 2013.05 [Refereed]

DOI

Scopus
5.5-fJ/bit direct modulation of lambda-scale embedded active region photonic-crystal lasers

Koji Takeda, Tomonari Sato, Akihiko Shinya, Kengo Nozaki, Hideaki Taniyama, Koichi Hasebe, Takaaki Kakitsuka, Masaya Notomi, Shinji Matsuo

2013 Optical Interconnects Conference (OI 2013), Santa Fe, USA WB1 2013.05 [Refereed] [Invited]

DOI

Scopus

3

Citation

(Scopus)
Integrated on-chip optical links using photonic-crystal lasers and photodetectors with current blocking trenches

Koji Takeda, Tomonari Sato, Akihiko Shinya, Kengo Nozaki, Hideaki Taniyama, Masaya Notomi, Koichi Hasebe, Takaaki Kakitsuka, Shinji Matsuo

2013 Optical Fiber Communication Conference and Exposition and the National Fiber Optic Engineers Conference (OFC/NFOEC 2013), Anaheim, USA OM2J 2013.03 [Refereed]

DOI
Lambda-scale embedded active-region photonic crystal lasers for off-chip interconnect

S. Matsuo, K. Takeda, T. Sato, T. Fujii, A. Shinya, E. Kuramochi, M. Notomi, K. Hasebe, T. Kakitsuka

IET Conference Publications 2013 ( 622 ) 276 - 278 2013 [Refereed]

　View Summary

We successfully increase the output power of an electrically driven photonic crystal laser. By using a six-quantum-well structure and decreasing the series resistance, the device, having 32-μA threshold current, exhibits 39.3-μW output power. We also demonstrate bit-error rate measurements with 10-Gbit/s signal without using optical amplifier.

DOI

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Role of buried heterostructure in photonic-crystal laser for high-temperature and high-output-power operation

T. Kakitsuka, T. Sato, K. Takeda, K. Hasebe, K. Nozaki, M. Notomi, S. Matsuo

2012 International Symposium on Photonics and Electronics Convergence (ISPEC), Tokyo, Japan P-42 2012.12 [Refereed]
Ultra-low threshold current CW operation of photonic crystal nanocavity laser with InAlAs sacrificial layer

Tomonari Sato, Koji Takeda, Akihiko Shinya, Kengo Nozaki, Hideaki Taniyama, Koichi Hasebe, Takaaki Kakitsuka, Masaya Notomi, Shinji Matsuo

2012 IEEE International Semiconductor Laser Conference (ISLC 2012), San Diego, USA WC4 2012.10 [Refereed]

DOI

Scopus

4

Citation

(Scopus)
95°C CW operation of InGaAlAs multiple-quantum-well photonic-crystal nanocavity laser with ultra-low threshold current

T. Sato, K. Takeda, A. Shinya, K. Nozaki, H. Taniyama, W. Kobayashi, K. Hasebe, T. Kakitsuka, M. Notomi, S. Matsuo

2012 IEEE Photonics Conference (IPC 2012), Burlingame, USA WF2 2012.09 [Refereed]

DOI

Scopus

4

Citation

(Scopus)
10-Gbit/s direct modulation of optically pumped InGaAlAs multiple-quantum-well photonic-crystal nanocavity laser up to 100°C

Tomonari Sato, Koji Takeda, Hiromitsu Imai, Akihiko Shinya, Kengo Nozaki, Hideaki Taniyama, Koichi Hasebe, Wataru Kobayashi, Takaaki Kakitsuka, Masaya Notomi, Shinji Matsuo

2012 International Conference on Indium Phosphide and Related Materials (IPRM 2012), Santa Barbara, USA Tu-3D.3 2012.08 [Refereed]

DOI

Scopus

1

Citation

(Scopus)
High-Temperature Operation of Photonic-Crystal Lasers for On-Chip Optical Interconnection

Koji Takeda, Tomonari Sato, Takaaki Kakitsuka, Akihiko Shinya, Kengo Nozaki, Chin-Hui Chen, Hideaki Taniyama, Masaya Notomi, Shinji Matsuo

IEICE TRANSACTIONS ON ELECTRONICS E95C ( 7 ) 1244 - 1251 2012.07 [Refereed]

　View Summary

To meet the demand for light sources for on-chip optical interconnections, we demonstrate the continuous-wave (CW) operation of photonic-crystal (PhC) nanocavity lasers at up to 89.8 degrees C by using InP buried heterostructures (BH). The wavelength of a PhC laser can be precisely designed over a wide range exceeding 100 nm by controlling the lattice constant of the PhC. The dynamic responses of the PhC laser are also demonstrated with a 3-dB bandwidth of over 7.0 GHz at 66.2 degrees C. These results reveal the laser's availability for application to wavelength division multiplexed (WDM) optical interconnection on CMOS chips. We discuss the total bandwidths of future on-chip optical interconnections, and report the capabilities of PhC lasers.

DOI

Scopus

4

Citation

(Scopus)
Continuous-wave operation of electrically driven wavelength-scale embedded active-region photonic-crystal lasers at room temperature

Koji Takeda, Tomonari Sato, Akihiko Shinya, Kengo Nozaki, Hideaki Taniyama, Masaya Notomi, Koichi Hasebe, Takaaki Kakitsuka, Shinji Matsuo

2012 Conference on Lasers and Electro-Optics (CLEO 2012), San Jose, USA CTu1N 2012.05 [Refereed]

DOI
Room-temperature continuous-wave operation of lateral current injection wavelength-scale embedded active-region photonic-crystal laser

Shinji Matsuo, Koji Takeda, Tomonari Sato, Masaya Notomi, Akihiko Shinya, Kengo Nozaki, Hideaki Taniyama, Koichi Hasebe, Takaaki Kakitsuka

OPTICS EXPRESS 20 ( 4 ) 3773 - 3780 2012.02 [Refereed]

　View Summary

We have developed a wavelength-scale embedded active-region photonic-crystal laser using lateral p-i-n structure. Zn diffusion and Si ion implantation are used for p- and n-type doping. Room-temperature continuous-wave lasing behavior is clearly observed from the injection current dependence of the output power, 3dB-bandwidth of the peak, and lasing wavelength. The threshold current is 390 mu A and the estimated effective threshold current is 9.4 mu A. The output power in output waveguide is 1.82 mu W for a 2.0-mA current injection. These results indicate that the embedded active-region structure effectively reduce the thermal resistance. Ultrasmall electrically driven lasers are an important step towards on-chip photonic network applications. (C) 2012 Optical Society of America

DOI

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136

Citation

(Scopus)
28.5-fJ/bit on-chip optical interconnect using monolithically integrated photonic crystal laser and photodetector

S. Matsuo, T. Sato, K. Takeda, A. Shinya, K. Nozaki, M. Notomi, K. Hasebe, T. Kakitsuka

European Conference and Exhibition on Optical Communication, ECEOC 2012 Th.3.B.2 2012 [Refereed]

　View Summary

We demonstrate the monolithic integration of a photonic crystal (PhC) laser and a photodetector with which to construct on-chip interconnect. By combining an ultracompact embedded active region and a PhC cavity, the laser exhibits an ultra-low threshold current of 22 μA and an integrated optical link operates at an ultra-low energy of 28.5 fJ/bit. © 2012 OSA.

DOI

Scopus

2

Citation

(Scopus)
Monolithically Integrated Wavelength-Routing Switch Using Tunable Wavelength Converters with Double-Ring-Resonator Tunable Lasers

Toru Segawa, Shinji Matsuo, Takaaki Kakitsuka, Yasuo Shibata, Tomonari Sato, Yoshihiro Kawaguchi, Yasuhiro Kondo, Ryo Takahashi

IEICE TRANSACTIONS ON ELECTRONICS E94C ( 9 ) 1439 - 1446 2011.09 [Refereed]

　View Summary

We present an 8 x 8 wavelength-routing switch (WRS) that monolithically integrates tunable wavelength converters (TWCs) and an 8 x 8 arrayed-waveguide grating. The TWC consists of a double-ring-resonator tunable laser (DRR TL) allowing rapid and stable switching and a semiconductor-optical-amplifier-based optical gate. Two different types of dry-etched mirrors form the laser cavity of the DRR TL, which enable integration of the optical components of the WRS on a single chip. The monolithic WRS performed 1 x 8 high-speed wavelength routing of a nonreturn-to-zero signal at 10 Gbit/s. The switching operation was demonstrated by simultaneously using two adjacent TWCs.

DOI

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11

Citation

(Scopus)
Injection-Locked Flip-Flop Operation of a DBR Laser

Takaaki Kakitsuka, Shinji Matsuo, Kiichi Hamamoto, Toru Segawa, Hiroyuki Suzuki, Ryo Takahashi

IEEE PHOTONICS TECHNOLOGY LETTERS 23 ( 17 ) 1261 - 1263 2011.09 [Refereed]

　View Summary

The flip-flop operation of a distributed Bragg reflector (DBR) laser using sidemode injection locking is demonstrated. The mode suppression induced by spectral hole burning between two longitudinal modes allows stable bistable operation. A switching time of 0.8 ns and a switching power of 30 mu W in flip-flop cycle of 10 ns are successfully demonstrated.

DOI

Scopus

6

Citation

(Scopus)
Directly frequency modulated DFB laser integrated with EA modulator for extended transmission reach

K. Hasebe, S. Matsuo, H. Sanjoh, A. Ohki, T. Kakitsuka, Y. Shibata

2010 European Conference on Optical Communication (ECOC 2010), Torino, Italy Th.9.D.5 2010.09 [Refereed]

DOI

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15

Citation

(Scopus)
High-speed ultracompact buried heterostructure photonic-crystal laser with 13 fJ of energy consumed per bit transmitted

Shinji Matsuo, Akihiko Shinya, Takaaki Kakitsuka, Kengo Nozaki, Toru Segawa, Tomonari Sato, Yoshihiro Kawaguchi, Masaya Notomi

NATURE PHOTONICS 4 ( 9 ) 648 - 654 2010.09 [Refereed]

　View Summary

The ability to directly modulate a nanocavity laser with ultralow power consumption is essential for the realization of a CMOS-integrated, on-chip photonic network, as several thousand lasers must be integrated onto a single chip. Here, we show high-speed direct modulation (3-dB modulation bandwidth of 5.5 GHz) of an ultracompact InP/InGaAsP buried heterostructure photonic-crystal laser at room temperature by optical pumping. The required energy for transmitting one bit is estimated to be 13 fJ. We also achieve a threshold input power of 1.5 mu W, which is the lowest observed value for room-temperature continuous-wave operation of any type of laser. The maximum single-mode fibre output power of 0.44 mu W is the highest output power, to our knowledge, for photonic-crystal nanocavity lasers under room-temperature continuous-wave operation. Implementing a buried heterostructure leads to excellent device performance, reducing the active region temperature and effectively confining the carriers inside the cavity.

DOI
Insertion loss-free 1×4 InGaAsP/InP multimode interference waveguide switch integrated with optical amplifier

Tetsuro Kubo, Shinji Tomofuji, Shinji Matsuo, Takaaki Kakitsuka, Ken-ichi Kitayama

Photonics in Switching (PS 2010), Monterey, USA PWD4 2010.07 [Refereed]

DOI
A monolithic wavelength-routing switch using double-ring-resonator-coupled tunable lasers with highly reflective mirrors

T. Segawa, S. Matsuo, T. Kakitsuka, Y. Shibata, T. Sato, R. Takahashi

2010 International Conference on Indium Phosphide and Related Materials (IPRM 2010), Takamatsu, Japan WeA3-2 2010.05 [Refereed]

DOI

Scopus

9

Citation

(Scopus)
All-optical wavelength-routing switch with monolithically integrated filter-free tunable wavelength converters and an AWG

Toru Segawa, Shinji Matsuo, Takaaki Kakitsuka, Yasuo Shibata, Tomonari Sato, Yoshihiro Kawaguchi, Yasuhiro Kondo, Ryo Takahashi

OPTICS EXPRESS 18 ( 5 ) 4340 - 4345 2010.03 [Refereed]

　View Summary

We present a compact 4x8 wavelength-routing switch that monolithically integrates fast tunable wavelength converters (TWCs) and an arrayed-waveguide grating (AWG) for optical packet switching. The TWC consists of a double-ring-resonator-coupled tunable laser which allows rapid and stable switching, and an optical gate based on a parallel amplifier structure which prevents an input optical signal from being routed through the AWG (filter-free operation). A deep-ridge waveguide technology, employed for the AWG and ring resonators, facilitates the fabrication of the switch and makes the device compact. The filter-free TWCs achieve low crosstalk of the input optical signal of less than -22 dB. The wavelength routing operation of a non-return-to-zero (NRZ) signal at 10 Gbit/s is achieved with a switching time of less than 5 ns. (C) 2010 Optical Society of America

DOI

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31

Citation

(Scopus)
Dynamic switching characteristics of InGaAsP/InP multimode interference optical waveguide switch

Shinji Tomofuji, Shinji Matsuo, Takaaki Kakitsuka, Ken-ichi Kitayama

OPTICS EXPRESS 17 ( 26 ) 23380 - 23388 2009.12 [Refereed]

　View Summary

Multimode interference (MMI) waveguide switches show promise for switch in optical packet switching (OPS). In this work, we fabricated 1 x 4 InGaAsP/InP MMI waveguide switch device which consists of a 1 x 4 MMI splitter, 4 equally spaced single-mode waveguides with phase shifters, and a 4 x 4 MMI combiner. Good crosstalk and extinction ratio of -14.47 dB and 23.39 dB, respectively, are obtained. In addition, we experimentally demonstrate dynamic switching, and the rise and fall time of 1.4 ns and 1.2 ns, respectively, are obtained. (C) 2009 Optical Society of America

DOI PubMed

Scopus

37

Citation

(Scopus)
Successful Application of the 8-band k.p Theory to Optical Properties of Highly Strained In(Ga)As/InGaAs Quantum Wells With Strong Conduction-Valence Band Coupling

Takeshi Fujisawa, Tomonari Sato, Manabu Mitsuhara, Takaaki Kakitsuka, Takayuki Yamanaka, Yasuhiro Kondo, Fumiyoshi Kano

IEEE JOURNAL OF QUANTUM ELECTRONICS 45 ( 9 ) 1183 - 1191 2009.09 [Refereed]

　View Summary

Band-edge optical properties of highly strained In(Ga)As/InGaAs quantum wells on InP with the bandgap wavelength longer than m are analyzed by using 6- and 8-band theory. It is demonstrated that the 8-band model is indispensable for the analysis of highly strained In(Ga)As/InGaAs quantum wells due to the strong coupling between conduction and valence bands induced by large strain in the well. Furthermore, an energy correction originating from the interaction between the spin-orbit coupling and the strain, which has been discarded in conventional theory, is taken into account, and the role of the effect for highly strained quantum wells is discussed. The photoluminescence peak wavelength and absorption spectra of In(Ga)As/InGaAs quantum wells calculated by 8-band model are in excellent agreement with those obtained by experiment, showing the validity of the results presented here.

DOI

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22

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(Scopus)
Dynamic operation of a monolithic wavelength-routing switch using double-ring-resonator-coupled tunable laser diodes

T. Segawa, S. Matsuo, T. Kakitsuka, Y. Shibata, T. Sato, Y. Kawaguchi, Y. Kondo, R. Takahashi

2009 International Conference on Photonics in Switching (PS 2009), Pisa, Italy WeI3-1 2009.09 [Refereed]

DOI

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2

Citation

(Scopus)
Dynamic switching characteristics of 1×4 InGaAsP/lnP multimode interference waveguide switch

S. Tomofuji, S. Matsuo, T. Kakitsuka, K. Kitayama

2009 International Conference on Photonics in Switching (PS 2009), Pisa, Italy ThI2-2 2009.09 [Refereed]

DOI

Scopus
Ultra-small InGaAsP/InP buried heterostructure photonic crystal laser

Shinji Matsuo, Akihiko Shinya, Takaaki Kakitsuka, Kengo Nozaki, Toru Segawa, Tomonari Sato, Yoshihiro Kawaguchi, Masaya Notomi

2009 Lasers and Electro-Optics Society Annual Meeting (LEOS 2009), Belek-Antalya, USA WH3 2009.09 [Refereed]

DOI

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5

Citation

(Scopus)
High-Speed Frequency Modulated DBR Lasers for Long-Reach Transmission

Takaaki Kakitsuka, Shinji Matsuo

IEICE TRANSACTIONS ON ELECTRONICS E92C ( 7 ) 929 - 936 2009.07 [Refereed] [Invited]

　View Summary

We present a novel high-speed transmitter consisting of a frequency modulated DBR laser and optical filters. The refractive index modulation in the phase control region of the DBR laser allows highspeed frequency modulation. The generated frequency modulated signal is converted to an intensity modulated signal using the edge of the optical filter pass band. We present theoretical simulations of high-speed modulation characteristics and extension of transmission reach. With the proposed transmitter, we review the experimental demonstration of 180-km transmission of a 10-Gb/s signal with a tuning range of 27 nm and 60-km transmission of a 20-Gb/s signal.

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4

Citation

(Scopus)
Semiconductor Double-Ring-Resonator-Coupled Tunable Laser for Wavelength Routing

Toru Segawa, Shinji Matsuo, Takaaki Kakitsuka, Tomonari Sato, Yasuhiro Kondo, Ryo Takahashi

IEEE JOURNAL OF QUANTUM ELECTRONICS 45 ( 7 ) 892 - 899 2009.07 [Refereed]

　View Summary

A monolithic widely tunable semiconductor laser based on a double-ring resonator is developed for use in a wavelength-routing switch. By using the double-ring resonator as a wavelength-selective filter, operation over a wide wavelength tuning range is achieved with a low tuning current. This low-tuning-current operation makes the laser very promising as a high-speed tunable light source for a wavelength-routing-based switch by effectively suppressing the thermal wavelength drift induced by current injection. In addition, the laser fabrication process is simpler compared to conventional distributed Bragg reflector tunable lasers. A tuning range of 50.0 nm, covering the entire C-band, is successfully demonstrated with an injection current of less than 5.2 mA. The wavelength drift caused by the thermal transients is less than 5 GHz.

DOI

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45

Citation

(Scopus)
20-km transmission of 40-Gb/s signal using frequency modulated DBR laser

T. Kakitsuka, S. Matsuo, T. Segawa, Y. Shibata, Y. Kawaguchi, R. Takahashi

2009 Optical Fiber Communication Conference (OFC 2009), San Diego, USA OThG4 2009.03 [Refereed]

DOI
All-optical on-chip bit memory based on ultra high Q InGaAsP photonic crystal

Akihiko Shinya, Shinji Matsuo, Yosia, Takasumi Tanabe, Eiichi Kuramochi, Tomonari Sato, Takaaki Kakitsuka, Masaya Notomi

OPTICS EXPRESS 16 ( 23 ) 19382 - 19387 2008.11 [Refereed]

　View Summary

We demonstrate all-optical bit memory operation with photonic crystal (PhC) nanocavities based on an InGaAsP substrate with a band gap at a wavelength of about 1.3 mu m. The optical bistability is based on a refractive index modulation caused by carrier-plasma dispersion. The operating energy required for switching is only 30 fJ, and the minimum optical bias power for bistability is 40 mu W, which is about one hundred times less than that required for laser based bistable memories. (C) 2008 Optical Society of America

DOI PubMed

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85

Citation

(Scopus)
Integrated filtered feedback tunable laser using double-ring-resonator- coupled filter

Shinji Matsuo, Toru Segawa, Takaaki Kakitsuka, Tomonari Sato, Ryo Takahashi, Hiroyuki Suzuki, Boudewijn Docter, Fouad Karouta, Meint Smit

2008 IEEE International Semiconductor Laser Conference (ISLC 2008), Sorrent, Italy WB7 2008.09 [Refereed]

DOI

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7

Citation

(Scopus)
4 x 25 Gb/s Frequency-Modulated DBR Laser Array for 100-GbE 40-km Reach Application

Shinji Matsuo, Takaaki Kakitsuka, Toru Segawa, Rieko Sato, Yasuo Shibata, Ryo Takahashi, Hiromi Ohashi, Hiroshi Yasaka

IEEE PHOTONICS TECHNOLOGY LETTERS 20 ( 17-20 ) 1494 - 1496 2008.09 [Refereed]

　View Summary

A monolithically integrated 100-Gb/s throughput (4 x 25 Gb/s) laser array has been developed that employs frequency-modulated distributed Bragg reflector lasers. An optical filter converts a frequency-modulated signal to an amplitude-modulated signal with a high contrast ratio in addition to reducing the lasing spectrum bandwidth. A clear eye opening after 40-km transmission was observed with a 25-Gb/s nonreturn-to-zero signal in the 1550-nm region.

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24

Citation

(Scopus)
Successful application of the 8-band kp framework to optical properties of highly strained In(Ga)As/InGaAs quantum wells with strong conduction-valence band coupling

T. Fujisawa, T. Sato, M. Mitsuhara, T. Kakitsuka, T. Yamanaka, Y. Kondo, F. Kano

2008 Numerical Simulation of Optoelectronic Devices (NUSOD 2008), Nottingham, UK ThA5 2008.08 [Refereed]

DOI

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Metalorganic vapor phase epitaxial growth of InAs/InGaAs multiple quantum well structures on InP substrates (Invited paper)

Tomonari Sato, Manabu Mitsuhara, Takaaki Kakitsuka, Takeshi Fujisawa, Yasuhiro Kondo

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS 14 ( 4 ) 992 - 997 2008.07 [Refereed]

　View Summary

Device quality InAs/InGaAs multiple quantum well (MQW) structures were grown on InP substrates by metalorganic vapor phase epitaxy (MOVPE) and applied to lasers emitting at wavelengths longer than 2 mu m. InAs/InGaAs MQWs with flat interfaces were obtained by adjusting the growth temperature between 460 degrees C and 510 degrees C. The photoluminescence peak wavelength of the MQWs increases from 1.93 to 2.47 mu m as the thickness of InAs quantum wells increases from 2 to 7 nm. The structural, and optical properties remained almost unchanged even after annealing at 620 degrees C. For 40-mu m-wide stripe broad-area lasers with 5-nm-thick InAs quantum wells, a lasing wavelength longer than 2.3 mu m and an output power higher than 10 mW were achieved under continuous-wave operation at a temperature of 25 degrees C. These results indicate that InAs/InGaAs MQW structures grown by MOVPE are very useful for the active region of 2 mu m wavelength lasers.

DOI

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33

Citation

(Scopus)
Optical polarization in columnar InAs/GaAs quantum dots: 8-Band k...p calculations

Toshio Saito, Hiroji Ebe, Yasuhiko Arakawa, Takaaki Kakitsuka, Mitsuru Sugawara

Physical Review B - Condensed Matter and Materials Physics 77 ( 19 ) 195318-1-11 2008.05 [Refereed]

　View Summary

We have theoretically studied the optical polarization in columnar InAs/GaAs quantum dots (QDs), in which the self-assembled QDs are vertically stacked with no interdot spacing. The model structure of the columnar QDs consists of truncated-cone-shaped InAs QDs with the stacking-layer numbers (SLNs) of 1, 3, 5, 7, and 9. We used the valence-force-field model to calculate the strain distribution. We find that the biaxial strain in the middle layers of the columnar QDs decreases with increasing SLN and becomes negative for SLN=9. This is due to the condition that the vertical lattice constant of InAs in these layers has to match that of the side GaAs. By using the strain-dependent 8-band k...p theory for the electronic states, we calculated the transverse-electric (TE)- and transverse-magnetic (TM)-mode intensities for the electron-hole transitions. The piezoelectric effect is included in the calculations. For SLN=1 and 3, only the TE-mode transition occurs. With increasing SLN beyond 3, the TM-mode intensity increases while the TE-mode one decreases. Consequently, when SLN changes from 7 to 9, the dominant polarization character changes from the TE mode to the TM mode. This dominant polarization change is attributed to the increase of the light-hole character in the wave function of the ground hole state, which is the consequence of the negative biaxial strain in the middle layers for SLN=9. The change in the optical polarization calculated in this study is in good agreement with the photoluminescence experiment reported by Kita [Jpn. J. Appl. Phys., Part 2 41, L1143 (2002)]. © 2008 The American Physical Society.

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54

Citation

(Scopus)
All-optical on-chip memory based on ultra high Q InGaAsP photonic crystal nanocavity

Akihiko Shinya, Shinji Matsuo, Yosia, Takasumi Tanabe, Eiichi Kuramochi, Tomonari Sato, Takaaki Kakitsuka, Masaya Notomi

2008 Conference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics (CLEO/QELS), San Jose, USA CThJ4 2008.05 [Refereed]

DOI

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2

Citation

(Scopus)
Experimental demonstration of 1x4 InP/lnGaAsP optical integrated multimode interference waveguide switch

Shintaro Niwa, Shinji Matsuo, Takaaki Kakitsuka, Ken-ichi Kitayama

2008 International Conference on Indium Phosphide and Related Materials (IPRM 2008), Versailles, France 2008.05 [Refereed]

DOI

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9

Citation

(Scopus)
Monolithically integrated filter-free wavelength converter with widely tunable double-ring resonator coupled laser

T. Segawa, S. Matsuo, T. Kakitsuka, Y. Shibata, T. Sato, Y. Kondo, R. Takahashi

2008 International Conference on Indium Phosphide and Related Materials (IPRM 2008), Versailles, France 2008.05 [Refereed]

DOI

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11

Citation

(Scopus)
Enhanced temperature characteristics of InGaAs/InAlGaAs multi-quantum-well lasers on low-in-content InGaAs ternary substrates

Takeshi Fujisawa, Masakazu Arai, Takaaki Kakitsuka, Takayuki Yamanaka, Yasuhiro Kondo, Hiroshi Yasaka

APPLIED PHYSICS EXPRESS 1 ( 4 ) 412031 - 412033 2008.04 [Refereed]

　View Summary

Temperature characteristics of multi-quantum-well lasers on InGaAs ternary substrates are investigated. By using InAlGaAs barriers and low-in-content InGaAs substrates, the characteristic temperature of the laser can reach as high as 150 K between 25 and 85 degrees C due to the enhancement of the material gain. Calculated characteristic temperatures are in good agreement with those obtained by experiment, showing the validity of the results presented here. (C) 2008 The Japan Society of Applied Physics.

DOI

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8

Citation

(Scopus)
Extended transmission reach using optical filtering of frequency-modulated widely tunable SSG-DBR laser

S. Matsuo, T. Kakitsuka, T. Segawa, N. Fujiwara, Y. Shibata, H. Oohashi, H. Yasaka, H. Suzuki

IEEE PHOTONICS TECHNOLOGY LETTERS 20 ( 1-4 ) 294 - 296 2008.01 [Refereed]

　View Summary

We propose a novel transmitter consisting of a frequency-modulated widely tunable super-structure-grating distributed Bragg reflector (SSG-DBR) laser and an optical filter. The SSG-DBR laser acts as a frequency modulating light source with a constant output power by modulating the reverse bias voltage in the phase control (PC) region. By optically filtering the output light from the frequency-modulated laser, we have demonstrated 60- and 180-km transmissions for 20- and 10-Gb/s nonreturn-to-zero (NRZ) signals, respectively. The power penalty was 2.2 dB after the 180-km transmission of a 10-Gb/s NRZ signal as determined by bit-error-rate measurements. Furthermore, an extended transmission reach was achieved with a wide tuning range without controlling the bias and modulating voltages in the PC region.

DOI

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18

Citation

(Scopus)
Frequency modulated widely tunable SSG-DBR laser with optical filtering for extended transmission reach

S. Matsuo, T. Kakitsuka, T. Segawa, N. Fujiwara, Y. Shibata, H. Yasaka, H. Suzuki

2007 Lasers and Electro-Optics Society Annual Meeting (LEOS 2007), Lake Buena Vista, USA WJ2 2007.10 [Refereed]

DOI

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1

Citation

(Scopus)
Full C-band tuning operation of semiconductor double-ring resonator-coupled laser with low tuning current

T. Segawa, S. Matsuo, T. Kakitsuka, T. Sato, Y. Kondo, H. Suzuki

IEEE PHOTONICS TECHNOLOGY LETTERS 19 ( 17-20 ) 1322 - 1324 2007.09 [Refereed]

　View Summary

A widely tunable double-ring resonator-coupled laser is developed for use in a photonic packet switching system. By using a double-ring resonator as a wavelength-selective filter, full C-band tuning operation is achieved with a low tuning current, and the fabrication process is simpler than that used for distributed-Bragg-reflector-type tunable lasers. A tuning range of 50.0 nm with a current injection of less than 7 mA is successfully demonstrated.

DOI

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42

Citation

(Scopus)
Short cavity DBRLaser using vertical groove gratings for large-scale photonic integrated circuits

Boudewijn Docter, Toru Segawa, Takaaki Kakitsuka, Shinji Matsuo, Tetsuyoshi Ishii, Yoshihiro Kawaguchi, Yasuhiro Kondo, Hiroyuki Suzuki, Fouad Karouta, Meint K. Smit

IEEE PHOTONICS TECHNOLOGY LETTERS 19 ( 17-20 ) 1469 - 1471 2007.09 [Refereed]

　View Summary

We present a novel compact distributed Bragg reflector (DBR) laser using InP-InGaAsP deep ridge waveguides with vertical groove gratings. Stable single-mode laser operation was achieved with an active cavity length down to 25 mu m and a threshold current of 14 mA. The devices are promising building blocks in large-scale photonic integrated circuits because of their simple structure and low power consumption.

DOI

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8

Citation

(Scopus)
Optical flip-flop operation using a DBR laser

Shinji Matsuo, Takaaki Kakitsuka, Toru Segawa, Hiroyuki Suzuki

2007 Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR 2007), Seoul, Korea 2007.08 [Refereed]

DOI

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4

Citation

(Scopus)
Short Cavity DBR Laser Using Vertical Groove-Gratings for Large Scale Photonic Integrated Circuits

B. Docter, T. Segawa, T. Kakitsuka, S. Matsuo, T. Ishii, Y. Kawaguchi, Y. Kondo, H. Suzuki, F. Karouta, M. K. Smit

2007 Optoelectronic and Communication Conference (OECC 2007), Tokyo, Japan 13D1-3 2007.07 [Refereed]
MOVPE-grown GROWN InAs/InGaAs multiple-quantum-well lasers emitting at 2.33 μm

Tomonari Sato, Manabu Mitsuhara, Takaaki Kakitsuka, Yasuhiro Kondo

2007 International Conference on Indium Phosphide and Related Materials (IPRM 2007), Matsue, Japan WeA2-3 2007.05 [Refereed]

DOI

Scopus

5

Citation

(Scopus)
Tunable double-ring-resonator-coupled laser over full C-band with low tuning current

T. Segawa, S. Matsuo, T. Kakitsuka, T. Sato, Y. Kondo, H. Suzuki

2007 International Conference on Indium Phosphide and Related Materials (IPRM 2007), Matsue, Japan FrB2-3 2007.05 [Refereed]

DOI

Scopus

4

Citation

(Scopus)
Design of a widely tunable laser with a chirped ladder filter

T. Kakitsuka, S. Matsuo, S. H. Jeong, T. Segawa, H. Okamoto, Y. Kawaguchi, Y. Kondo, Y. Yoshikuni, H. Suzuki

2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices (NUSOD 2006), Singapore TuD2 2006.09 [Refereed]

DOI

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Widely tunable laser using microring resonators

S. Matsuo, T. Segawa, T. Kakitsuka, H. Okamoto, Y. Kawaguchi, Y. Kondo, H. Suzuki, Y. Yoshikuni

2006 IEEE International Semiconductor Laser Conference (ISLC 2006), Hawaii, USA TuB2 2006.09 [Refereed]

DOI
Design of a widely tunable laser with a chirped ladder filter

Takaaki Kakitsuka, Shinji Matsuo, Seok-Hwan Jeong, Toru Segawa, Hiroshi Okamoto, Yoshihiro Kawaguchi, Yasuhiro Kondo, Yuzo Yoshikuni, Hiroyuki Suzuki

OPTICAL AND QUANTUM ELECTRONICS 38 ( 12-14 ) 1053 - 1060 2006.09 [Refereed]

　View Summary

We theoretically investigated a digitally tunable laser with a chirped ladder filter and a ring resonator to obtain a wide wavelength tuning range covering the whole C- or L- band. The clear relation between the tuning range and laser structure, especially the ladder filter, is described analytically. The introduction of a chirped structure into a ladder filter is effective in achieving both wide tunability and a stable lasing mode. A numerical simulation based on multimode rate equations shows that a tuning range of over 40 nm and a mode suppression ratio over 40 dB can be achieved by introducing a chirped ladder filter.

DOI

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1

Citation

(Scopus)
Numerical demonstration of wavelength-insensitive tuning characteristics of ladder-type tunable filter for a widely tunable laser diode

SH Jeong, S Matsuo, T Kakitsuka, H Suzuki, Y Yoshikuni

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 45 ( 5A ) 4090 - 4096 2006.05 [Refereed]

　View Summary

We propose a wave length-insensitive tunable ladder-type interferometric filter having a novel configuration for use in a widely tunable laser diode. The spectral characteristics of the proposed device are numerically analyzed and compared with those of our previously reported device regarding transmittance and bandwidth. Wavelength-insensitive tuning and flat-topped filter spectra are obtained by optimizing device parameters. We also discuss the applicability of the proposed ladder filter to a widely tunable laser. The proposed tunable laser has a nearly constant threshold current density with tuning current injection. The oscillation frequency of the laser diode can be stabilized by introducing chirping into the ladder filter to obtain a single passband response. These high-performance spectral characteristics make the proposed device feasible for wavelength division-multiplexing-based systems.

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Amplifying characteristics of 1.55-mu m polarization-insensitive SOAs with MQW and strained-bulk active layers for device application

M Itoh, Y Shibata, T Kakitsuka, Y Kadota, H Sugiura, Y Tohmori

JOURNAL OF LIGHTWAVE TECHNOLOGY 24 ( 3 ) 1478 - 1485 2006.03 [Refereed]

　View Summary

Fundamental amplifying characteristics of 1.55-mu m semiconductor optical amplifiers (SOAs) that contain multiquantum well (MQW) active layers with an optimized tensile strain or bulk active layers with various tensile strains were investigated. Both types of SOAs have their own merits and demerits. For device application in networks, driving current and wavelength in the low-polarization-sensitivity condition are very important, but they have not been clarified yet. The results of the present investigation clarify the driving current and wavelength characteristics of low-polarization-sensitivity SOAs with MQW and strained-bulk active layers. The low-polarization-sensitivity condition of SOAs with a strained-bulk active layer is shown to have a very wide range of driving current and wavelength for network-device application. These results, with other requirements taken into account, provide guidelines for choosing the type of SOA most suitable for a given application.

DOI

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10

Citation

(Scopus)
Tuning range enhanced by self-phase adjustment in mode-hop-free short-active-region DBR laser

N Fujiwara, N Kikuchi, T Kakitsuka, H Okamoto, Y Kawaguchi, Y Kondo, H Yasaka, Y Yoshikuni, Y Tohmori

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS 11 ( 5 ) 939 - 944 2005.09 [Refereed]

　View Summary

The mode-hop-free tuning range is increased to 6.0 nm by using the self-phase adjustment effect in a short-active-region distributed Bragg reflector laser. The optical power is more than 1 mW for the whole tuning range, and the maximum power is greater than 4 mW. The self-phase adjustment mechanism is also discussed theoretically.

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Optical polarization control in columnar InAs/GaAs quantum dots: k.p analysis

T. Saito, T. Nakaoka, T. Kakitsuka, H. Ebe, M. Sugawara, Y. Arakawa

2005 International Symposium on Quantum Dots and Photonic Crystals (ISQDPC), Tokyo, Japan Cp-24 2005.03 [Refereed]
Reduction of linewidth enhancement factor in self-assembled dots by optimizing optical gain

T. Kakitsuka, T. Saito, Y. Arakawa

2005 International Symposium on Quantum Dots and Photonic Crystals (ISQDPC), Tokyo, Japan Cp-57 2005.03 [Refereed]
Strain distribution and electronic states in stacked InAs/GaAs quantum dots with dot spacing 0-6 nm

T Saito, T Nakaoka, T Kakitsuka, Y Yoshikuni, Y Arakawa

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES 26 ( 1-4 ) 217 - 221 2005.02 [Refereed]

　View Summary

We have calculated the strain distribution and electronic structures in stacked InAs/GaAs quantum dots (QDs) with the dot spacing 6-0 nm. We used the elastic continuum theory for the strain distribution, and the 8-band k . P theory for the electronic structures. For the triply stacked QDs, the light-hole (LH) component of the hole ground state increases with decreasing the dot spacing. The LH component in the columnar QD (dot spacing 0 nm) reaches 21.1 % which is 4.8 times larger than that in the single QD due to the reduction of the biaxial strain. Further increase of the LH component (up to 28.6%) is obtained in the fivefold-stacked columnar QD. This result suggests a possibility of increase in the TMmode transition in the columnar QDs. (C) 2004 Elsevier B.V. All rights reserved.

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32

Citation

(Scopus)
Mode-hop-free tuning range enhanced by self-phase-adjustment in a short-active-region DBR laser

Naoki Fujiwara, Nobuhiro Kikuchi, Takaaki Kakitsuka, Yoshihiro Kawaguchi, Hiroshi Okamoto, Yasuhiro Kondo, Hiroshi Yasaka, Yuzo Yoshikuni, Yuichi Tohmori

2004 IEEE International Semiconductor Laser Conference (ISLC 2004), Matsue, Japan SaA3 2004.09 [Refereed]

DOI
6.1 nm tuning in a mode-hop-free DBR laser

N. Fujiwara, T. Kakitsuka, N. Kikuchi, Y. Kawaguchi, H. Okamoto, Y. Kondo, Y. Yoshikuni, Y. Tohmori

2004 Optoelectronic and Communication Conference (OECC 2004), Yokoyama, Japan 15E2-3 2004.07 [Refereed]
Strain Distribution and Electronic States in Stacked InAs/GaAs Quantum Dots with Dot Spacing 0-6 nm

T. Saito, T. Nakaoka, T. Kakitsuka, Y. Yoshikuni, Y. Arakawa

Quantum Dots Conference 2004 (QD 2004), Banff, Canada THP35 2004.05 [Refereed]
Transition energy control via strain in single quantum dots embedded in micromachined air-bridge

T Nakaoka, T Kakitsuka, T Saito, Y Arakawa

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 43 ( 4B ) 2069 - 2072 2004.04 [Refereed]

　View Summary

We have fabricated a micromachined air-bridge in which InGaAs self-assernbled quantum dots are embedded. Electrostatic voltage applied between the air-bridge and the substrate pulls the air-bridge down. The deformation of the bridge produces additional strain on the matrix and the dots modifying the electronic states. The modification has been detected through a photoluminescence peak shift of a single dot. The effect of the deformation on the electronic states is evaluated with the aid of theoretical calculation using a finite element method. The good agreement between calculated and experimental energy shifts demonstrates that the energy shift is due to the strain induced by the bridge deformation. Based on the result, we discuss the capability of this micromachined device with quantum dots to control the zero-dimensional electronic system and to measure small deformation and strain.

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Manipulation of electronic states in single quantum dots by micromachined air-bridge

T Nakaoka, T Kakitsuka, T Saito, Y Arakawa

APPLIED PHYSICS LETTERS 84 ( 8 ) 1392 - 1394 2004.02 [Refereed]

　View Summary

We demonstrate an approach to manipulate the quantum states of single self-assembled quantum dots via strain. We fabricate a micromachined air-bridge with microelectromechanical systems (MEMS), in which quantum dots are embedded. The air-bridge is deformed by electrostatic force, which produces additional strain on the dots to modify the confining potential. Our method with MEMS technique will allow functional manipulation of the electronic states through the direct modification of the confining potential. (C) 2004 American Institute of Physics.

DOI

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6

Citation

(Scopus)
Strain distribution and electronic states in stacked InAs/GaAs quantum dots

T. Saito, T. Nakaoka, T. Kakitsuka, Y. Yoshikuni, Y. Arakawa

2003 Quantum Dots and Photonic Crystal (QDPC), Tokyo, Japan P-20 2003.11 [Refereed]
Strain-induced modifications of the electronic states of InGaAs quantum dots embedded in bowed airbridge structures

T Nakaoka, T Kakitsuka, T Saito, S Kako, S Ishida, M Nishioka, Y Yoshikuni, Y Arakawa

JOURNAL OF APPLIED PHYSICS 94 ( 10 ) 6812 - 6817 2003.11 [Refereed]

　View Summary

We have fabricated bowed airbridges in which self-assembled InGaAs quantum dots are embedded. Strong strain distribution induced in the bowed airbridge and the effect on the electronic states of the quantum dots are investigated through the measurement of the photoluminescence from the individual dots and the theoretical calculation. A finite element calculation shows the strain in the bowed airbridge to distribute from tensile to compressive along the growth direction. The strain effect on the electronic states of the dots is probed through the photoluminescence peak shift following the deformation of the GaAs matrix of the dots from a wall-shaped structure to the bowed airbridge. The magnitude of the peak shift varies systematically with the position of the quantum dot along the growth direction, clearly reflecting the strain distribution in the bridge. The energy level shift following the deformation is calculated by solving the three-dimensional Schrodinger equation taking into account the strain distribution around the dots embedded in the bridge. The calculation, which agrees well with the experiment, demonstrates that the characteristic strain distribution around the dot embedded in the bowed airbridge modifies not only the energy levels, but also the wave functions. The electron and hole wave functions are modified differently, mainly due to the opposite contribution of the biaxial strain to the hydrostatic ones. (C) 2003 American Institute of Physics.

DOI

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15

Citation

(Scopus)
Demonstration of MEMS-controlled electronic states in single quantum dots

T. Nakaoka, T. Kakitsuka, T. Saito, S. Kako, S. Ishida, M. Nishioka, Y. Arakawa

2003 International Conference on Solid State Devices and Materials (SSDM 2003), Tokyo, Japan E-1-5 2003.09 [Refereed]
Inherently mode-hop-free distributed Bragg reflector (DBR) laser array

N Fujiwara, T Kakitsuka, M Ishikawa, F Kano, H Okamoto, Y Kawaguchi, Y Kondo, Y Yoshikuni, Y Tohmori

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS 9 ( 5 ) 1132 - 1137 2003.09 [Refereed]

　View Summary

An inherently mode-hop-free tuning of 4.5 nm was achieved with a short-active-region distributed Bragg reflector (DBR) laser. The DBR laser contains no phase-adjustment electrode, which greatly simplifies the tuning. Fast tuning of several nanoseconds and error-free operation for 2.5-Gbit/s direct modulation were also observed. A 4-ch array of short-active-region DBR lasers achieved wavelength tuning of 12.5 nm.

DOI

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33

Citation

(Scopus)
Effect of strain variation on photoluminescence from InGaAs quantum dots in air-bridge structures

T Nakaoka, T Kakitsuka, T Saito, S Kako, S Ishida, M Nishioka, Y Yoshikuni, Y Arakawa

PHYSICA STATUS SOLIDI B-BASIC RESEARCH 238 ( 2 ) 289 - 292 2003.07 [Refereed]

　View Summary

We have fabricated freestanding wire (air-bridge) structures with a bowed shape by introducing a strain layer to vary the strain around quantum dots. The photoluminescence peak energy shift following the shape change of the bridge can be observed for individual InGaAs quantum dots. We find systematic dependence of the peak shift on the dot position along the growth direction. The dependence of the peak shift is explained by strain distribution in the bridge. The strain distribution in the bridge as well as in the dot is calculated using a finite element method. Using the strain data, the electronic structures of the dots embedded in the bridge structures are calculated within the effective mass approximation. The calculated energy shifts agree well with the experimental ones.

DOI

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2

Citation

(Scopus)
Mode-hop-free wavelength-tunable distributed Bragg reflector laser

N Fujiwara, T Kakitsuka, F Kano, H Okamoto, Y Kawaguchi, Y Kondo, Y Yoshikuni, Y Tohmori

ELECTRONICS LETTERS 39 ( 7 ) 614 - 615 2003.04 [Refereed]

　View Summary

Mode-hop-free wavelength tuning of 4.45 nm was achieved by a short-active-region distributed Bragg reflector laser without phase control. Simple and continuous tuning was realised with a single tuning current. High-speed wavelength tuning of 5 ns during direct modulation of 2.5 Gbit/s was also achieved.

DOI

Scopus

13

Citation

(Scopus)
Wavelength-selectable DBR Laser Array Inherently Free from Mode-hopping for High-speed Switching

Y. Tohmori, N. Fujiwara, T. Kakitsuka, Y. Shibata, F. Kano, M. Ishikawa, Y. Kawaguchi, H. Okamoto, Y. Kondo, Y. Yoshikuni

2003 Optical Fiber Communication Conference (OFC 2003), Atranta, USA ThF5 2003.03 [Refereed]

DOI
Numerical analysis of transition energy shift in InAs/GaAs quantum dots induced by strain-reducing layers

T Kakitsuka, T Saito, T Nakaoka, Y Arakawa, H Ebe, M Sugawara, Y Yoshikuni

2ND INTERNATIONAL CONFERENCE ON SEMICONDUCTOR QUANTUM DOTS 0 ( 4 ) 1157 - 1160 2003 [Refereed]

　View Summary

The electronic structure of pyramid-like InAs/GaAs quantum dots (QDs) covered with an InGaAs strain-reducing layer is analyzed numerically, focusing on the dependence of the transition energy on the strain-reducing layer thickness. The transition energy of the QD is calculated by the effective mass approximation, taking into account the change of the strain distribution induced by the strain-reducing layer. A large transition energy redshift of more than 60 meV caused by the strain reduction in the QD is obtained, as the strain reducing layer thickness increases. Furthermore, it is found that when strain-reducing layer thickness becomes large, the transition energy redshift saturates. The calculation explains the reported experimental results correctly, which indicates that the strain reducing layer enables control of operation-wavelength over a wide range in various optical devices.

DOI

Scopus

8

Citation

(Scopus)
Effect of strain variation on photoluminescence from InGaAs quantum dots in air-bridge structures

T. Nakaoka, T. Kakitsuka, T. Saito, S. Kako, S. Ishida, M. Nishioka, Y. Yoshikuni, Y. Arakawa

2nd International Conference on Semiconductor Quantum Dots (QD 2002), Tokyo, Japan B-3 2002.09 [Refereed]
Numerical analysis of transition energy shift in InAs/GaAs quantum dots induced by strain-reducing layers

T. Kakitsuka, T. Saito, T. Nakaoka, Y. Arakawa, H. Ebe, M. Sugawara, Y. Yoshikuni

2nd International Conference on Semiconductor Quantum Dots (QD 2002), Tokyo, Japan M-15 2002.09 [Refereed]
Polarization-insensitive SOA with a strained bulk active layer for network device application

M Itoh, Y Shibata, T Kakitsuka, Y Kadota, Y Tohmori

IEEE PHOTONICS TECHNOLOGY LETTERS 14 ( 6 ) 765 - 767 2002.06 [Refereed]

　View Summary

Current and wavelength characteristics for 1.55-mum semiconductor optical amplifiers (SOAs) containing bulk active layers with various tensile strains were investigated. The strain dependence of the gain-difference between TE-mode and TM-mode (DeltaG(TE-TM)) was almost linear having the waveguide-width over 0.8-1.5 mum. A -0.12% tensile-strained bulk SOA had very low DeltaG(TE-TM) of less than 0.8 dB ranging the driving current from 0 to 120 mA. The low-polarization-sensitive condition of SOA with a strained-bulk active layer was shown to have very wide range in driving current and wavelength for the network device application.

DOI

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17

Citation

(Scopus)
Influence of buried structure on polarization sensitivity in strained bulk semiconductor optical amplifiers

T Kakitsuka, Y Shibata, M Itoh, Y Kadota, Y Tohmori, Y Yoshikuni

IEEE JOURNAL OF QUANTUM ELECTRONICS 38 ( 1 ) 85 - 92 2002.01 [Refereed]

　View Summary

In order to achieve an accurate design of polarization-insensitive semiconductor optical amplifiers based on tensile-strained bulk InGaAsP, the reduction of strain in the active layer of the buried heterostructure and its influence on polarization sensitivity are analyzed numerically for the first time. The gain calculation, including the strain distribution in the active layer, is examined based on the k . p method for the different active layers. It is found that the strain introduced during the epitaxial growth is strongly reduced after regrowth of the burying layer. In an active layer having the aspect ratio of 1 :4, the strain reduction causes more than a 0.5-dB deviation in the polarization sensitivity of the gain. From a comparison with the experimental results, it is shown that including the effect of the burying layer in the calculation gives an accurate determination of the amount of strain for the polarization independence.

DOI

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16

Citation

(Scopus)
Current and wavelength characteristics of polarization-insensitive SOAs with strained-bulk active layers

M. Itoh, Y. Shibata, T. Kakitsuka, Y. Kadota, Y. Kondo, Y. Tohmori

2001 International Conference on Solid State Devices and Materials (SSDM 2001), Tokyo, Japan E-1-5 2001.09 [Refereed]
Numerical analysis of polarization sensitivity in strained bulk semiconductor optical amplifiers

T. Kakitsuka, Y. Shibata, M. Itoh, Y. Tohmori, Y. Yoshikuni

2001 13th International Conference on Indium Phosphide and Related Materials (IPRM 2001), Nara, Japan ThA1-5 2001.05 [Refereed]
Theoretical analysis of polarization sensitivity of strained bulk SOAs

T. Kakitsuka, Y. Shibata, M. Itoh, Y. Tohmori, Y. Yoshikuni

SPIE Photonics West, Symposiym on Integrated Photonics, San Jose, USA 4283 398 - 405 2001.01 [Refereed]

DOI

Scopus

7

Citation

(Scopus)
Renormalization group analysis of U(2) Gauge theory with 0-Term in 2 dimensions

Masahiro Imachi, Takaaki Kakitsuka, Norimasa Tsuzuki, Hiroshi Yoneyama

Progress of Theoretical Physics 97 ( 5 ) 791 - 808 1997 [Refereed]

　View Summary

A U(2) lattice gauge theory with 0-term in 2 space-time dimensions is investigated. It has a non-Abelian real action and Abelian ((U(1) type) imaginary action. The imaginary action is defined as the standard 0-term. As the effect of a renormalization group (RG) transformation, the non-Abelian imaginary action is induced. After many steps of the RG transformation, the non-Abelian part dies away. After several steps of the RG transformations, the renormalized action approaches the so-called heat kernel action. A phase transition is found only at 0 = π.

DOI

Scopus

1

Citation

(Scopus)

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Presentations

Theoretical Analysis of InGaN Vacuum Traveling Carrier Photodiodes for Terahertz Wave Generation

Digu Huang, Luyuan Wang, Xun Wu, Wenbiao Li, Kiyoto Takahata, Kazutoshi Kato, Takaaki Kakitsuka

Presentation date： 2024.03

Event date：
2024.03

　

　
The doping density dependence of the output characteristics of Si microring resonator

Toshinori Ninomiya, Takaaki Kakitsuka, Kiyoto Takahata

2024 the Institute of Electronics, Information and Communication Engineers General Conference C-3_4-07

Presentation date： 2024.03
Design of Narrow Linewidth Distributed Reflector Laser with Detuned Loading Effect

Choungrui Zhang, Takaaki Kakitsuka

The 17th International collaboration Symposium on Information, Production and Systems (ISIPS 2023), B3-2

Presentation date： 2023.11
Non-reciprocal Loss Shift Membrane Optical Isolators on SiO2/Si Substrate

Zhao Chen, Yibing Wu, Takaaki Kakitsuka

16th International collaboration Symposium on Information, Production and Systems (ISIPS 2022), B2-1

Presentation date： 2022.11
5μm活性層長オンシリコンDBRレーザの直接変調低エネルギー動作

菅野絵理奈, 武田浩司, 藤井拓郎, 硴塚孝明, 松尾慎治

信学技報, OCS2022-36, OPE2022-82, LQE2022-45

Presentation date： 2022.10
Siプラットフォーム上メンブレンInGaAlAs EADFBレーザ

開達郎, 相原卓磨, 前田圭穂, 藤井拓郎, 佐藤具就, 土澤泰, 髙畑清人, 硴塚孝明, 松尾慎治 [Invited]

2022年電子情報通信学会ソサイエティ大会, C-3/4-46

Presentation date： 2022.09
SiC基板上直接変調メンブレンレーザの85°C における光子－光子共鳴効果により増強された74 GHz帯域の実証

山岡優,Nikolaos-Panteleimon Diamantopoulos, 西英隆, 藤井拓郎, 武田浩司, 開達郎, 金澤慈, 硴塚孝明, 松尾慎治

2022年電子情報通信学会ソサイエティ大会, C-3/4-42

Presentation date： 2022.09
InGaAs-Based Photodetectors with Spatial Carrier-Transport for THz-Wave Generation

Wenbiao Li, Xun Wu, Daonan Xie, Takaaki Kakitsuka

15th International Collaboration Symposium on Information, Production and Systems (ISIPS 2021), B2-7

Presentation date： 2021.11
Directly-Modulated Distributed Reflector Lasers Using Detuned-Loading Effect for Extended Optical Fiber Transmission Reach

Yuan Luo, Zicong Han, Takaaki Kakitsuka

15th International Collaboration Symposium on Information, Production and Systems (ISIPS 2021), B2-2

Presentation date： 2021.11
Siプラットフォーム上O帯メンブレンInGaAlAs電界吸収型変調器

開達郎, 相原卓磨, 前田圭穂, 藤井拓郎, 佐藤具就, 硴塚孝明, 髙畑清人, 松尾慎治

第82回応用物理学会秋季学術講演会, 10p-N405-9

Presentation date： 2021.09
5 μm活性層長メンブレンDBRレーザの極低エネルギー動作

菅野絵理奈, 武田浩司, 藤井拓郎, 硴塚孝明, 松尾慎治

2021年電子情報通信学会ソサイエティ大会, C-3/4-36

Presentation date： 2021.09
Membrane DMLs on Silicon for 100-Gbps/λ Transmission

Nikolaos-Panteleimon Diamantopoulos, Suguru Yamaoka, Takuro Fujii, Hidetaka Nishi, Koji Takeda, Tai Tsuchizawa, Takaaki Kakitsuka, Shinji Matsuo [Invited]

2021年電子情報通信学会総合大会

Presentation date： 2021.03
Si マッハ・ツェンダ変調器とInGaAsP DFB レーザのSi 基板上集積

相原卓磨, 開達郎, 藤井拓郎, 武田浩司, 土澤泰, 硴塚孝明, 福田浩, 松尾慎治

第68回応用物理学会春季学術講演会, 16p-Z10-10

Presentation date： 2021.03
Siプラットフォーム上薄膜InGaAsP電界吸収型変調器

開達郎, 相原卓磨, 前田圭穂, 藤井拓郎, 土澤泰, 髙畑清人, 硴塚孝明, 松尾慎治 [Invited]

信学技報, OCS2020-41 OPE2020-73 LQE2020-79

Presentation date： 2021.02
SiC基板上メンブレンレーザにおける接合界面SiO2膜の薄膜化

山岡優, 中尾亮, 藤井拓郎, 武田浩司, 開達郎, 西英隆, 硴塚孝明, 土澤泰, 松尾慎治

2020年第81回応用物理学会秋季学術講演会 9a-Z13-1

Presentation date： 2020.09

Event date：
2020.09

-

　
Si Mach-Zehnder変調器とInGaAsP半導体光増幅器のSi基板上集積

相原卓磨, 開達郎, 藤井拓郎, 武田浩司, 土澤泰, 硴塚孝明, 福田浩, 松尾慎治

2020年電子情報通信学会ソサイエティ大会 C-3/4-39

Presentation date： 2020.09

Event date：
2020.09

-

　
Si基板上薄膜InGaAsPマッハ・ツェンダ変調器におけるアーム内半導体光増幅器の集積

相原卓磨, 開達郎, 藤井拓郎, 武田浩司, 土澤泰, 硴塚孝明, 松尾慎治

2020年電子情報通信学会総合大会, C-3/4-58

Presentation date： 2020.03
メンブレンDBRレーザの低しきい値電流化

菅野絵理奈, 武田浩司, 藤井拓郎, 硴塚孝明, 松尾慎治

2020年電子情報通信学会総合大会, C-3/4-34

Presentation date： 2020.03
SiC基板上1.3 μm帯分布反射型メンブレンレーザの小信号応答の解析

山岡優, 中尾亮, 藤井拓郎, 武田浩司, 開達郎, 西英隆, Nikolaos-Panteleimon Diamantopoulos, 硴塚孝明, 土澤泰, 松尾慎治

第67回応用物理学会春季学術講演会, 14a-B410-6

Presentation date： 2020.03
130℃ stage temperature operation of lateral current injection membrane lasers on SiC substrates

S. Yamaoka, R. Nakao, T. Fujii, K. Takeda, T. Hiraki, H. Nishi, T. Kakitsuka, T. Tsuchizawa, S. Matsuo

The 38th Electronic Materials Symposium, Fr1-4

Presentation date： 2019.10
Selective epitaxy of InGaAlAs MQWs using InP on insulator substrate for integrating wide wavelength range III-V devices on Si

T. Fujii, T. Sato, K. Takeda, T. Kakitsuka, S. Matsuo

The 38th Electronic Materials Symposium, Th1-3

Presentation date： 2019.10
マッハツェンダ変調器と半導体光増幅器のSi上集積

開達郎, 相原卓磨, 藤井拓郎, 武田浩司, 硴塚孝明, 土澤泰, 松尾慎治

第80回応用物理学会秋季学術講演会, 19p-E206-8

Presentation date： 2019.09
Epitaxial Growth Technique using InP-on-Insulator towards III-V/Si Photonic Integrated Circuits

藤井拓郎, 佐藤具就, 武田浩司, 硴塚孝明, 松尾慎治 [Invited]

第80回応用物理学会秋季学術講演会 20a-E215-1

Presentation date： 2019.09
SiC基板上1.3 μm帯分布反射型メンブレンレーザの進展

山岡優, 中尾亮, 藤井拓郎, 武田浩司, 開達郎, 西英隆, 硴塚孝明, 土澤泰, 松尾慎治 [Invited]

2019年電子情報通信学会ソサイエティ大会，C-3-9

Presentation date： 2019.09
メンブレンInGaAsP位相シフタとSiN導波路を用いたマッハ・ツェンダ変調器

相原卓磨, 開達郎, 藤井拓郎, 武田浩司, 土澤泰, 硴塚孝明, 松尾慎治 [Invited]

2019年電子情報通信学会ソサイエティ大会, C-3-52

Presentation date： 2019.09
Si基板上薄膜InGaAsPマッハツェンダ変調器の40Gbit/sエラーフリー動作

相原卓磨, 開達郎, 藤井拓郎, 武田浩司, 土澤泰, 硴塚孝明, 松尾慎治

2019年電子情報通信学会総合大会, C-3-39

Presentation date： 2019.03
Siプラットフォーム上低消費電力半導体光増幅器

開達郎, 相原卓磨, 武田浩司, 藤井拓郎, 土澤泰, 硴塚孝明, 松尾慎治

第66回応用物理学会春季学術講演会, 11p-W331-4

Presentation date： 2019.02
SiC基板上1.3μm帯横注入メンブレンレーザの作製と発振特性

山岡優, 中尾亮, 藤井拓郎, 武田浩司, 開達郎, 西英隆, 硴塚孝明, 土澤泰, 松尾慎治

第66回応用物理学会春季学術講演会, 12a-W611-10

Presentation date： 2019.02
Si基板上薄膜InGaAsPマッハツェンダ変調器

開達郎, 相原卓磨, 武田浩司, 藤井拓郎, 硴塚孝明, 土澤泰, 福田浩, 松尾慎治 [Invited]

電子情報通信学会技術研究報告, 118, 299, LQE2018-85

Presentation date： 2018.11
Si基板上InGaAsPマッハツェンダ変調器とInGaAs受光器の集積

開達郎, 相原卓磨, 武田浩司, 藤井拓郎, 土澤泰, 硴塚孝明, 福田浩, 松尾慎治

第79回応用物理学会秋季学術講演会, 18p-212A-14

Presentation date： 2018.09
メンブレンレーザによる低消費電力光インターコネクト

藤井拓郎, 西英隆, 武田浩司, 菅野絵理奈, 硴塚孝明, 土澤泰, 松尾慎治 [Invited]

第５回超高速光エレクトロニクス研究会（UFO）

Presentation date： 2018.06
Monolithic Integration of an 8‐channel Directly Modulated Membrane‐laser Array and a SiN AWG Filter on Si

西英隆, 藤井拓郎, DIAMANTOPOULOS Nikolaos-Panteleimon, 武田浩司, 菅野絵理奈, 硴塚孝明, 土澤泰, 福田浩, 松尾慎治

電子情報通信学会技術研究報告, 118, 62, LQE2018-17

Presentation date： 2018.05
埋め込みヘテロ構造を用いたSi上薄膜InGaAsPマッハツェンダ変調器

開達郎, 相原卓磨, 藤井拓郎, 武田浩司, 土澤泰, 硴塚孝明, 福田浩, 松尾慎治

第65回応用物理学会春季学術講演会, 18p-B201-6

Presentation date： 2018.03
高効率III‐V/Si MOSキャパシタマッハツェンダ変調器

開達郎, 相原卓磨, 長谷部浩一, 武田浩司, 藤井拓郎, 土澤泰, 硴塚孝明, 福田浩, 松尾慎治 [Invited]

2018年電子情報通信学会総合大会, C-4-17

Presentation date： 2018.03
III‐V/Si MOSキャパシタマッハツェンダ変調器の多値変調動作

開達郎, 相原卓磨, 長谷部浩一, 藤井拓郎, 武田浩司, 硴塚孝明, 土澤泰, 福田浩, 松尾慎治

第78回応用物理学会秋季学術講演会, 7a-A504-4

Presentation date： 2017.08
短共振器両側DRレーザの活性層長依存性

菅野絵理奈, 武田浩司, 藤井拓郎, 長谷部浩一, 西英隆, 山本剛, 硴塚孝明, 松尾慎治

2017年電子情報通信学会ソサイエティ大会, C-4-7

Presentation date： 2017.08
III-V/Si MOS Capacitor Mach-Zehnder Modulator

開達郎, 相原卓磨, 長谷部浩一, 藤井拓郎, 武田浩司, 硴塚孝明, 土澤泰, 福田浩, 松尾慎治

電子情報通信学会技術研究報告, 1167, 61, LQE2017-13

Presentation date： 2017.05
シリコン細線導波路上薄膜レーザの作製

相原卓磨, 開達郎, 長谷部浩一, 藤井拓郎, 武田浩司, 西英隆, 土澤泰, 硴塚孝明, 松尾慎治

第64回応用物理学会春季学術講演会, 16p-F204-10

Presentation date： 2017.03
III-V/Si MOSキャパシタマッハツェンダ変調器による10Gb/s強度変調

開達郎, 相原卓磨, 長谷部浩一, 藤井拓郎, 武田浩司, 硴塚孝明, 土澤泰, 福田浩, 松尾慎治

第64回応用物理学会春季学術講演会, 16p-F204-11

Presentation date： 2017.03
1.3μm帯InGaAlAs系直接変調メンブレンDRレーザアレイ

藤井拓郎, 西英隆, 武田浩司, 菅野絵理奈, 長谷部浩一, 硴塚孝明, 土澤泰, 松尾慎治 [Invited]

2017年電子情報通信学会総合大会, C-3-21

Presentation date： 2017.03
InP‐Si MOS構造光変調器の作製と評価

開達郎, 相原卓磨, 長谷部浩一, 武田浩司, 藤井拓郎, 土澤泰, 硴塚孝明, 山本剛, 松尾慎治

第77回応用物理学会秋季学術講演会, 14p-B4-1

Presentation date： 2016.09
Continuous-wave Operation of Ultra-short Cavity Membrane Lasers on Si Substrates

菅野絵理奈, 武田浩司, 藤井拓郎, 長谷部浩一, 西英隆, 山本剛, 硴塚孝明, 松尾慎治

電子情報通信学会技術研究報告, 116, 195, LQE2016-28

Presentation date： 2016.08
シリコン基板上に集積した横注入薄膜レーザー

硴塚孝明 [Invited]

レーザー学会東京支部第27回若手技術者のためのレーザー応用セミナー

Presentation date： 2016.07
Si基板に直接接合したInP薄膜上へのInGaAsP系MQW成長

藤井拓郎, 武田浩司, 菅野絵里奈, 長谷部浩一, 山本剛, 硴塚孝明, 松尾慎治

第63回応用物理学会春季学術講演会, 21p-H112-9

Presentation date： 2016.03
シリコン基板上化合物半導体デバイス集積

硴塚孝明 [Invited]

エイトラムダフォーラム2015第4回会合

Presentation date： 2015.12
High-speed operation of GaAs/InGaAs metamorphic lasers emitting at 1.3μm

中尾亮, 荒井昌和, 小林亘, 硴塚孝明, 山本剛, 松尾慎治 [Invited]

電子情報通信学会技術研究報告, 115, 378, LQE2015-126

Presentation date： 2015.12
Progress of Photonic-Crystal Lasers on Si Substrate

武田浩司, 藤井拓郎, 倉持栄一, 新家昭彦, 納富雅也, 長谷部浩一, 硴塚孝明, 松尾慎治 [Invited]

2015年電子情報通信学会ソサイエティ大会, C-4-1

Presentation date： 2015.08
SiOxスポットサイズ変換器を集積したオンSiメンブレン分布反射型レーザ

西英隆, 藤井拓郎, 武田浩司, 長谷部浩一, 硴塚孝明, 土澤泰, 山本剛, 山田浩治, 松尾慎治

第76回応用物理学会秋季学術講演会, 13a-2S-6

Presentation date： 2015.08
単一モード位相アレイフォトニック結晶レーザ(2)

新家昭彦, 野崎謙悟, 倉持栄一, 硴塚孝明, 武田浩司, 谷山秀昭, 松尾慎治, 納富雅也

第76回応用物理学会秋季学術講演会, 16p-2A-11

Presentation date： 2015.08
Heterogeneous integration of InGaAsP/InP-buried heterostructure and Si waveguide using InP growth on InP membrane bonded to Si substrate

藤井拓郎, 武田浩司, 西英隆, 長谷部浩一, 硴塚孝明, 土澤泰, 山本剛, 松尾慎治

第34回電子材料シンポジウム（EMS34）

Presentation date： 2015.07
Si細線上へのInP系埋込みヘテロ構造の集積

藤井拓郎, 武田浩司, 西英隆, 長谷部浩一, 硴塚孝明, 山本剛, 山田浩治, 松尾慎治

第62回応用物理学会春季学術講演会, 12p-A16-10

Presentation date： 2015.02
Fabrication of membrane lasers by epitaxial growth of InP using InP-based active layer film on SiO2/Si substrate

Fujii Takuro, Sato Tomonari, Takeda Koji, Hasebe Koichi, Kakitsuka Takaaki, Matsuo Shinji

電子情報通信学会技術研究報告, LQE2014-86

Presentation date： 2014.10
斜めSOI細線導波路上に配置されたInPフォトニック結晶レーザの小型ハイブリッド設計

新家昭彦, 野崎謙悟, 倉持栄一, 硴塚孝明, 武田浩司, 佐藤具就, 谷山秀昭, 長谷部浩一, 藤井拓郎, 松尾慎治, 納富雅也

第75回応用物理学会秋季学術講演会, 17p-C8-4

Presentation date： 2014.09
Siウェハに直接接合したInGaAsP多重量子井戸薄膜の高温環境耐性

藤井拓郎, 佐藤具就, 武田浩司, 長谷部浩一, 硴塚孝明, 松尾慎治

第75回応用物理学会秋季学術講演会, 18a-A20-1

Presentation date： 2014.09
Photonic Crystal Lasers and Membrane Lasers for Optical lnterconnection

Kakitsuka Takaaki, Matsuo Shinji [Invited]

2014年電子情報通信学会ソサイエティ大会, CI-1-6

Presentation date： 2014.09
Lateral Current Injection DFB Laser on Si/SiO2 Substrate

松尾慎治, 藤井拓郎, 長谷部浩一, 武田浩司, 佐藤具就, 硴塚孝明

電子情報通信学会技術研究報告, 114, 187, LQE2014-29

Presentation date： 2014.08
イオン注入・熱拡散を用いた横方向PN接合DFBレーザの25Gb/s直接変調

長谷部浩一, 武田浩司, 藤井拓郎, 佐藤具就, 硴塚孝明, 松尾慎治

第61回応用物理学関係学術連合講演会, 18a-F9-5

Presentation date： 2014.03
MOVPEによるSiO2/Si基板上InGaAsP量子井戸構造のInP埋込み成長

藤井拓郎, 佐藤具就, 武田浩司, 長谷部浩一, 硴塚孝明, 松尾慎治 [Invited]

第61回応用物理学関係学術連合講演会,18a-E11-8

Presentation date： 2014.03
Si基板上電流注入LEAPレーザの室温連続発振

武田浩司, 佐藤具就, 藤井拓郎, 倉持栄一, 納富雅也, 長谷部浩一, 硴塚孝明, 松尾慎治

第61回応用物理学関係学術連合講演会, 18a-E16-3

Presentation date： 2014.03
漏れ導波路による埋込ヘテロ構造フォトニック結晶共振器の単一モード化

新家昭彦, 佐藤具就, 武田浩司, 野崎謙悟, 倉持栄一, 硴塚孝明, 谷山秀昭, 長谷部浩一, 藤井拓郎, 松尾慎治, 納富雅也

第61回応用物理学関係学術連合講演会, 17p-E16-10

Presentation date： 2014.03
Low energy-cost operation of directly driven LEAP lasers

Takeda K, Sato T, Shiinya A, Kuramochi E, Notomi M, Hasebe K, Kakitsuka T, Matsuo S

2013年電子情報通信学会ソサイエティ大会, C-4-10

Presentation date： 2013.09
Photonic-Crystal Lasers with Current Blocking Trenches

TAKEDA Koji, SATO Tomonari, KAKITSUKA Takaaki, SHINYA Akihiko, NOZAKI Kengo, TANIYAMA Hideaki, NOTOMI Masaya, HASEBE Koichi, MATSUO Shinji

電子情報通信学会技術研究報告, 113, 190, LQE2013-43

Presentation date： 2013.08
インライン出力導波路を用いたLEAPレーザの単一モード発振

新家昭彦, 佐藤具就, 武田浩司, 野崎謙悟, 倉持栄一, 硴塚孝明, 谷山秀昭, 藤井拓郎, 松尾慎治, 納富雅也

第74回応用物理学会学術講演会, 18p-A3-8

Presentation date： 2013.08
波長サイズ埋込み活性層フォトニック結晶レーザの高出力化

佐藤具就, 武田浩司, 新家昭彦, 倉持栄一, 納富雅也, 長谷部浩一, 硴塚孝明, 松尾慎治

第74回応用物理学会学術講演会, 16p-A8-13

Presentation date： 2013.08
Current-lnjection Photonic Crystal Laser Operating with Ultra-Low Energy Consumption

Kakitsuka Takaaki, Sato Tomonari, Takeda Koji, Hasebe Koichi, Shinya Akihiko, Nozaki Kengo, Taniyama Hideaki, Kobayashi Wataru, Notomi Masaya, Matsuo Shinji [Invited]

2013年電子情報通信学会総合大会, CI-1-2

Presentation date： 2013.03
LEAPレーザとフォトディテクタを集積した5Gb/s光リンク

武田浩司, 佐藤具就, 新家昭彦, 野崎謙悟, 谷山秀昭, 納富雅也, 硴塚孝明, 長谷部浩一, 松尾慎治

第60回応用物理学関係学術連合講演会, 28p-C1-19

Presentation date： 2013.03
低しきい値電流駆動埋込活性層フォトニック結晶レーザの高温動作

佐藤具就, 武田浩司, 硴塚孝明, 長谷部浩一, 新家昭彦, 野崎謙悟, 谷山秀昭, 小林亘, 納富雅也, 松尾慎治

第73回応用物理学会学術講演会, 14a-B1-1

Presentation date： 2012.08
電流注入LEAPレーザの10Gb/s直接変調動作

武田浩司, 佐藤具就, 新家昭彦, 野崎謙悟, 谷山秀昭, 納富雅也, 硴塚孝明, 長谷部浩一, 松尾慎治

第73回応用物理学会学術講演会, 12p-C6-3

Presentation date： 2012.08
Experimental demonstration of flat optical sub-carrier generation using an asymmetrically-driven semiconductor Mach-Zehnder modulator

Hasebe Koichi, Kikuchi Nobuhiro, Shibata Yasuo, Takeda Koji, Nunoya Nobuhiro, Kakitsuka Takaaki, Matsuo Shinji

2012年電子情報通信学会ソサエティ大会, C-4-3

Presentation date： 2012.08
High-Temperature Behavior of Lambda-Scale Embedded Active-Region Photonic-Crystal Laser

Kakitsuka Takaaki, Sato Tomonari, Takeda Koji, Hasebe Koichi, Nozaki Kengo, Notomi Masaya, Matsuo Shinji

2012年電子情報通信学会ソサエティ大会, C-4-6

Presentation date： 2012.08
フォトニック結晶レーザを用いた光機能素子

硴塚孝明 [Invited]

第14回先端光量子科学アライアンスセミナー

Presentation date： 2012.03
波長サイズ埋込活性層フォトニック結晶レーザの電流注入特性

武田浩司, 佐藤具就, 新家昭彦, 野崎謙悟, 谷山秀昭, 納富雅也, 硴塚孝明, 長谷部浩一, 松尾慎治

第59回応用物理学関係学術連合講演会, 16a-E5-5

Presentation date： 2012.02
波長サイズ埋込活性層フォトニック結晶レーザの作製

佐藤具就, 武田浩司, 硴塚孝明, 長谷部浩一, 新家昭彦, 野崎謙悟, 谷山秀昭, 納富雅也, 松尾慎治

第59回応用物理学関係学術連合講演会, 16a-F3-10

Presentation date： 2012.02
InGaAsP/InP multimode interference waveguide switch for addressing optical beams to optical RAM buffer

Kitayama Ken-ichi, Kubo Tetsuro, Matsuo Shinji, Kakitsuka Takaaki [Invited]

2011年電子情報通信学会総合大会, C-3-31

Presentation date： 2011.02
10Gbit/s error-free, non-dispersion-compensated transmission over 180km using a monolithically integrated electro-absorption modulator and a directly-frequency-modulated DFB laser

HASEBE Koichi, MATSUO Shinji, SANJOH Hiroaki, OHKI Akira, KAKITSUKA Takaaki, SHIBATA Yasuo

電子情報通信学会技術研究報告, 110, 396, LQE2010-139

Presentation date： 2011.01
Monolithically Integrated Wavelength-Routing Switch with Double-Ring-Resonator Tunable Lasers

SEGAWA Toru, MATSUO Shinji, KAKITSUKA Takaaki, SHIBATA Yasuo, SATO Tomonari, KAWAGUCHI Yoshihiro, KONDO Yasuhiro, TAKAHASHI Ryo

電子情報通信学会技術研究報告, 110, 179, LQE2010-43

Presentation date： 2010.08
高反射ミラー集積リング共振器型波長可変レーザを用いた波長ルーティング型光スイッチ

瀬川徹, 松尾慎治, 硴塚孝明, 柴田泰夫, 佐藤具就, 高橋亮

第71回応用物理学会学術講演会, 14p-G-3

Presentation date： 2010.08
Insertion loss-free 1 x 4 InGaAsP/InP multimode interference waveguide switch integrated with optical amplifier

Kubo Tetsuro, Tomofuji Shinji, Matsuo Shinji, Kakitsuka Takaaki, Kitayama Ken-ichi

2010年電子情報通信学会ソサイエティ大会, B-12-11

Presentation date： 2010.08
周波数変調レーザアレイ

松尾慎治, 硴塚孝明 [Invited]

第4 回超高速光エレクトロニクス研究会

Presentation date： 2010.04
周波数変調レーザを用いた多チャンネルアレイ

松尾慎治, 硴塚孝明 [Invited]

第3 回集積光デバイスと応用技術研究会

Presentation date： 2010.02
InGaAsP/InP埋め込みヘテロ構造を持つフォトニック結晶ナノ共振器

新家昭彦, 松尾慎治, 硴塚孝明, 野崎謙悟, 田辺孝純, 倉持栄一, 佐藤具就, 川口悦弘, 納富雅也

第70回応用物理学会学術講演会, 8p-B-8

Presentation date： 2009.09
リング共振器型波長可変レーザを集積した波長ルーティング型光スイッチの動的特性

瀬川徹, 松尾慎治, 硴塚孝明, 柴田泰夫, 佐藤具就, 川口悦弘, 近藤康洋, 高橋亮

第70回応用物理学会学術講演会, 9a-ZN-8

Presentation date： 2009.09
埋め込みヘテロ構造を持つフォトニック結晶レーザ

松尾慎治, 新家昭彦, 硴塚孝明, 野崎謙悟, 瀬川徹, 佐藤具就, 川口悦弘, 納富雅也

第70回応用物理学会学術講演会, 8p-B-7

Presentation date： 2009.09
OFC/NFOEC2009報告

硴塚孝明 [Invited]

2009年度第一回光材料・応用技術研究会

Presentation date： 2009.06
40-Gbps transmission over 20km via SMF using frequency modulated DBR laser

KAKITSUKA Takaaki, MATSUO Shinji, SEGAWA Toru, SHIBATA Yasuo, KAWAGUCHI Yoshihiro, TAKAHASHI Ryo

電子情報通信学会技術研究報告, 109, 93, LQE2009-31

Presentation date： 2009.06
Dynamic switching characteristics of 1×4 InGaAsP/InP multimode interference waveguide switch

TOMOFUJI Shinji, MATSUO Shinji, KAKITSUKA Takaaki, KITAYAMA Ken-ichi

電子情報通信学会技術研究報告, OCS2009-11

Presentation date： 2009.06
周波数変調DBRレーザと光フィルタによる40Gb/s信号のSMF20km伝送特性

硴塚孝明, 松尾慎治, 瀬川徹, 柴田泰夫, 川口悦弘, 高橋亮

第56 回応用物理学会学術講演会, 1p-G-1

Presentation date： 2009.03
InGaAsPフォトニック結晶ナノ共振器をベースとする低消費パワー・超小型光ビットメモリ(2)

新家昭彦, 松尾慎治, 野崎謙悟, 田辺孝純, 倉持栄一, 佐藤具就, 硴塚孝明, 納富雅也

第56 回応用物理学関係連合講演会, 30p-ZN-9

Presentation date： 2009.03
Recent Advancements for the Semiconductor Double-ring-resonator-coupled Laser

SEGAWA Toru, MATSUO Shinji, KAKITSUKA Takaaki, SATO Tomonari, KONDO Yasuhiro, SUZUKI Hiroyuki, TAKAHASHI Ryo [Invited]

電子情報通信学会技術研究報告, 108, 351, LQE2008-134

Presentation date： 2008.12
InGaAsPフォトニック結晶ナノ共振器を用いた低消費エネルギー・超小型光ビットメモリ

新家昭彦, 松尾慎治, Yosia, 田辺孝純, 倉持栄一, 佐藤具就, 硴塚孝明, 納富雅也 [Invited]

2008年電子情報通信学会ソサイエティ大会, CS-6-7

Presentation date： 2008.09
InGaAsPフォトニック結晶ナノ共振器をベースとする低消費パワー・超小型光ビットメモリ

新家昭彦, 松尾慎治, YOSIA, 田辺孝純, 倉持栄一, 佐藤具就, 硴塚孝明, 納富雅也

第69回応用物理学会学術講演会, 3p-V-8

Presentation date： 2008.09
半導体二重リング共振器型波長可変レーザを用いた波長変換素子の動的特性

瀬川徹, 松尾慎治, 硴塚孝明, 柴田泰夫, 佐藤具就, 近藤康洋, 高橋亮

第69回応用物理学会学術講演会, 4a-ZN-1

Presentation date： 2008.09
High-speed and long-distance transmission technique using frequency modulated laser and optical filtering

Kakitsuka Takaaki, Matsuo Shinji [Invited]

2008 年電子情報通信学会ソサイエティ大会, BCS-2-7

Presentation date： 2008.09
All-optical memory based on compound-semiconductor photonic crystal nanocavity

Shinya Akihiko, Matsuo Shinji, Yosia, Tanabe Takasumi, Kuramochi Eiichi, Sato Tomonari, Kakitsuka Takaaki, Tateno Kouta, Tawara Takehiko, Notomi Masaya

電子情報通信学会技術研究報告, 108, 114, LQE2008-22

Presentation date： 2008.06
周波数変調DBRレーザと光フィルタリング法を用いた高速長距離伝送

硴塚孝明, 松尾慎治 [Invited]

第4 回超高速光エレクトロニクス研究会

Presentation date： 2008.04
InGaAsPフォトニック結晶ナノ共振器をベースとする光双安定メモリ

新家昭彦, 松尾慎治, YOSIA, 田辺孝純, 倉持栄一, 佐藤具就, 硴塚孝明, 納富雅也

第55 回応用物理学関係連合講演会, 28p-ZX-14

Presentation date： 2008.03
InP/InGaAsPを用いた4チャネル多モード干渉導波路型光スイッチ

丹羽慎太朗, 松尾慎治, 硴塚孝明, 北山研一

第55 回応用物理学関係連合講演会, 28p-ZB-2

Presentation date： 2008.03
リング共振器型波長可変レーザをモノリシック集積したフィルタフリー波長変換素子

瀬川徹, 松尾慎治, 硴塚孝明, 柴田泰夫, 佐藤具就, 近藤康洋, 高橋亮 [Invited]

第55 回応用物理学関係連合講演会, 29a-ZG-9

Presentation date： 2008.03
8バンドk・p摂動法による高歪InGaAs量子井戸のバンド構造解析

藤澤剛, 佐藤具就, 満原学, 硴塚孝明, 山中孝之, 近藤康洋, 八坂洋

第55 回応用物理学関係連合講演会, 29a-ZQ-6

Presentation date： 2008.03
High-speed, long-distance transmission using frequency-modulated SSG-DBR laser and optical filters

KAKITSUKA Takaaki, MATSUO Shinji, SEGAWA Toru, SUZUKI Hiroyuki, FUJIWARA Naoki, SHIBATA Yasuo, YASAKA Hiroshi

電子情報通信学会技術研究報告, 107, 302, LQE2007-81, 7-10

Presentation date： 2007.10
低RFパワー窒素プラズマを用いたInP基板上InGaAsNのMOMBE成長

満原学, 佐藤具就, 硴塚孝明, 深野秀樹, 近藤康洋

第68 回応用物理学会学術講演会, 7p-E-5

Presentation date： 2007.09
周波数変調SSG-DBR-LDと光フィルタを用いた10Gbps NRZ信号の生成とその伝送特性

硴塚孝明, 松尾慎治, 瀬川徹, 鈴木博之, 藤原直樹, 柴田泰夫, 八坂洋

第68 回応用物理学会学術講演会, 6a-C-5

Presentation date： 2007.09
Semiconductor Double-ring-resonator-coupled Laser for Photonic Packet Switches

SEGAWA Toru, MATSUO Shinji, KAKITSUKA Takaaki, SATO Tomonari, KONDO Yasuhiro, SUZUKI Hiroyuki

電子情報通信学会技術研究報告, 107, 199, LQE2007-51

Presentation date： 2007.08
Optical Transmitter Consisting of Frequency Modulated SSG-DBR laser and Optical Filter

Matsuo S, Kakitsuka T, Segawa T, Fujiwara N, Shibata Y, Yasaka H, Suzuki H

2007 年電子情報通信学会ソサイエティ大会, C-4-14

Presentation date： 2007.08
InPモノリシック集積型光スイッチング用波長可変レーザ

硴塚孝明 [Invited]

第10 回計測フロンティア研究部門公開セミナー「デバイス計測シンポジウム〜半導体・無線・光通信技術と計測技術〜」

Presentation date： 2007.07
Optical Polarization in Columnar InAs/GaAs Quantum Dots: Effect of Piezoelectricity

斎藤敏夫, 硴塚孝明, 江部広治, 菅原充, 荒川泰彦

ナノ光・電子デバイスと量子情報エレクトロニクス, P-14

Presentation date： 2007.03
Numerical Analysis of Quantum Dot Lasers: Effect of Wavelength Detuning

硴塚孝明, 斎藤敏夫, 荒川泰彦

ナノ光・電子デバイスと量子情報エレクトロニクス, P-9

Presentation date： 2007.03
MOVPE成長したInP基板上InAs/InGaAs多重量子井戸レーザ

佐藤具就, 満原学, 硴塚孝明, 近藤康洋 [Invited]

第54 回応用物理学関係連合学術講演会, 29p-Q-1

Presentation date： 2007.03
InAs/GaAsコラム型量子ドットの偏光特性の理論解析(2)

斎藤敏夫, 硴塚孝明, 江部広治, 菅原充, 荒川泰彦

第54 回応用物理学関係連合学術講演会, 29a-Q-3

Presentation date： 2007.03
半導体リング共振器を用いた波長可変レーザの低電流駆動Full C-band動作

瀬川徹, 松尾慎治, 硴塚孝明, 佐藤具就, 近藤康洋, 鈴木博之

第54回応用物理学関係連合学術講演会, 28p-SG-18

Presentation date： 2007.03
InAs/GaAsコラム型量子ドットの偏光特性の理論解析;積層数依存性

斎藤敏夫, 硴塚孝明, 江部広治, 菅原充, 荒川泰彦

第67回応用物理学会学術講演会, 31p-ZF-20

Presentation date： 2006.08
自己形成量子ドットレーザにおける離調の効果の数値解析

硴塚孝明, 斎藤敏夫, 荒川泰彦

第67回応用物理学会学術講演会, 30a-ZT-10

Presentation date： 2006.08
InAs/GaAsコラム型量子ドットの偏光特性の積層数依存性

斎藤敏夫, 硴塚孝明, 江部広治, 菅原充, 荒川泰彦

ナノ光電子デバイスシンポジウム "量子ドットとフォトニック結晶", P-47

Presentation date： 2006.05
自己形成量子ドットレーザにおける離調の効果

硴塚孝明, 斎藤敏夫, 荒川泰彦

ナノ光電子デバイスシンポジウム "量子ドットとフォトニック結晶", P-49

Presentation date： 2006.05
InP基板上InGaAsN薄膜のMOMBE成長

満原学, 佐藤具就, 硴塚孝明, 渡辺孝夫, 近藤康洋

第53 回応用物理学関係連合講演会, 24p-P-6

Presentation date： 2006.03
チャーピングしたラダーフィルタを有する波長可変レーザの広帯域化

硴塚孝明, 鄭錫煥, 松尾慎治, 吉國裕三, 鈴木博之

第53 回応用物理学関係連合講演会, 23a-ZN-8

Presentation date： 2006.03
自己形成量子ドットにおける線幅増大係数の低減に向けた検討

硴塚孝明, 斎藤敏夫, 荒川泰彦

第66回応用物理学会学術講演会, 10p-W-3

Presentation date： 2005.09
InAs/GaAsコラム型積層量子ドットの偏波制御理論

斎藤敏夫, 中岡俊裕, 硴塚孝明, 江部広治, 菅原充, 荒川泰彦

応用物理学会関西支部セミナー「光物性とその応用」

Presentation date： 2005.02
VFFモデルによる閃亜鉛鉱型窒化物混晶における非混和領域の解析

硴塚孝明, 斎藤敏夫, 吉國裕三, 荒川泰彦

第65回応用物理学会学術講演会, 10p-W-3

Presentation date： 2004.09
InAs/GaAs積層量子ドットの光学的特性に関する理論解析

斎藤敏夫, 中岡俊裕, 硴塚孝明, 吉國裕三, 荒川泰彦

第65回応用物理学会学術講演会, 2p-ZK-11

Presentation date： 2004.09
ウルツ鉱型InNの光学吸収特性の温度依存性

松岡隆志, 岡本浩, 硴塚孝明, 牧本俊樹

第65回応用物理学会学術講演会, 3a-W-10

Presentation date： 2004.09
歪緩和層の導入によるInAs量子ドットのg因子の制御

中岡俊裕, 館林潤, 斎藤敏夫, 硴塚孝明, 宮澤俊之, 廣瀬真, 臼杵達哉, 横山直樹, 荒川泰彦

第65回応用物理学会学術講演会, 3p-ZK-3

Presentation date： 2004.09
InAs/GaAs積層量子ドットの電子構造の理論計算

斎藤敏夫, 中岡俊裕, 硴塚孝明, 吉國裕三, 荒川泰彦

合同成果報告シンポジウム-フォトニック結晶と量子ドット, P-9

Presentation date： 2004.04
高速変調動作に向けた自己形成量子ドットレーザの数値解析

硴塚孝明, 斎藤敏夫, 吉國裕三, 荒川泰彦

合同成果報告シンポジウム-フォトニック結晶と量子ドット, P-16

Presentation date： 2004.04
量子ドット内へのキャリア捕獲過程モデルの検討：レーザの変調速度に対する効果

硴塚孝明, 斎藤敏夫, 吉國裕三, 荒川泰彦

第51回応用物理学関係連合講演会, 28p-ZB-6

Presentation date： 2004.03
InAs/GaAs積層量子ドットの歪分布と電子構造(II)

斎藤敏夫, 中岡俊裕, 硴塚孝明, 吉國裕三, 荒川泰彦

第51回応用物理学関係連合講演会, 28p-ZB-9

Presentation date： 2004.03
自己形成量子ドットレーザにおける変調特性の数値解析：非線形利得と不均一広がりの効果

硴塚孝明, 斎藤敏夫, 吉國裕三, 菅原充, 荒川泰彦

第64回応用物理学会学術講演会, 31p-YC-7

Presentation date： 2003.09
InAs/GaAs積層量子ドットの歪分布と電子構造

斎藤敏夫, 中岡俊裕, 硴塚孝明, 吉國裕三, 荒川泰彦

第64回応用物理学会学術講演会, 1p-ZF-12

Presentation date： 2003.09
Wavelength Switching Characteristics on a Mode-hop-free DBR Laser

Fujiwara N, Ishikawa M, Kano F, Kakitsuka T, Kawaguchi Y, Yoshikuni Y, Tohmori Y

2003年電子情報通信学会ソサエティ大会, C-4-6

Presentation date： 2003.09
Wavelength Selectable Mode-hop-free DBR Laser Array

FUJIWARA Naoki, KAKITSUKA Takaaki, OKAMOTO Hiroshi, KAWAGUCHI Yoshihiro, KONDO Yasuhiro, YOSHIKUNI Yuzo, TOHMORI Yuichi

電子情報通信学会技術研究報告, OPE2003-33, 47-59

Presentation date： 2003.07
Wavelength tuning characteristics on a mode-hop-free DBR laser

Fujiwara N, Kakitsuka T, Okamoto H, Kawaguchi Y, Kondo Y, Yoshikuni Y, Tohmori Y

2003年電子情報通信学会総合大会 C-4-20

Presentation date： 2003.03
マイクロマシン構造に埋め込んだInGaAs量子ドットの顕微分光測定

中岡俊裕, 硴塚孝明, 斎藤敏夫, 加古敏, 石田悟己, 西岡政雄, 荒川泰彦

第50回応用物理学関係連合講演会, 29p-ZE-1

Presentation date： 2003.03
Effect of Strain Relaxation on Semiconductor Optical Amplifiers Based on Strained Bulk Active Layers with Buried Heterostructures

KAKITSUKA Takaaki, SHIBATA Yasuo, ITOH Masayuki, KADOTA Yoshiaki, TOHMORI Yuichi, YOSHIKUNI Yuzo

電子情報通信学会技術研究報告, LQE2002-17, 65-68

Presentation date： 2002.05
窒化物半導体量子ドットレーザにおける閾値電流の低減効果

硴塚孝明, 荒川泰彦, 吉國裕三

第49回応用物理学関係連合講演会, 28a-YH-4

Presentation date： 2002.03
埋込み構造がバルク半導体光増幅器の偏波特性に与える効果

硴塚孝明, 柴田泰夫, 伊東雅之, 門田好晃, 東盛裕一, 吉國裕三

第62回応用物理学会学術講演会, 13a-B-1

Presentation date： 2001.09
歪バルクSOAにおける利得の偏波特性解析

硴塚孝明, 柴田泰夫, 伊東雅之, 門田好見, 吉國裕三

第61回応用物理学会学術講演会, 7p-R-6

Presentation date： 2000.09
偏波無依存歪バルク半導体光増幅器の歪み量依存性

伊東雅之, 柴田泰夫, 硴塚孝明, 門田好晃, 東盛裕一

第61回応用物理学会学術講演会, 7p-R-7

Presentation date： 2000.09
長波系半導体材料における価電子帯吸収の温度依存性の解析(II)

硴塚孝明, 山中孝之, 関俊司, 吉國裕三

第60回応用物理学会学術講演会, 3a-ZE-28

Presentation date： 1999.09
A study on fairness in WDM optical ring with spatial reuse

Seki S, Kakitsuka T, Hirono T, Lui W, Yoshikuni Y

1999 年電子情報通信学会ソサイエティ大会, B-7-32

Presentation date： 1999.08
長波系半導体材料における価電子帯吸収の温度依存性の解析

硴塚孝明, 山中孝之, 関俊司

第46回応用物理学関係連合講演会, 28a-B-5

Presentation date： 1999.03
バルクInGaAsPにおける価電子帯間吸収の解析

硴塚孝明, 山中孝之, 吉國裕三, 横山清行, 関俊司

第59回応用物理学会学術講演会, 16p-T-16

Presentation date： 1998.09

▼display all

Research Projects

自由空間電子走行型光電変換デバイスの創生とテラヘルツ波パルスビームの実現

日本学術振興会科学研究費助成事業基盤研究(A)

Project Year :

2020.04

-

2023.03

加藤和利, 前田辰郎, 永妻忠夫, 金谷晴一, 久保木猛, 硴塚孝明, 高畑清人
High-speed semiconductor lasers toward beyond-terabit/s optical transmitters

Japan Society for the Promotion of Science Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (C)

Project Year :

2020.04

-

2023.03
Creation of Ultra-low Power-consumption Semiconductor Membrane Photonic Integrated Circuits toward On-chip Optical Interconnections

Japan Society for the Promotion of Science Grant-in-Aid for Scientific Research (S)

Project Year :

2015

-

2018

Shigehisa Arai

Misc

Heterogeneously integrated membrane InP-based optical modulators on Si platform

Tatsurou Hiraki, Takuma Aihara, Yoshiho Maeda, Takuro Fujii, Koji Takeda, Tai Tsuchizawa, Kiyoto Takahata, Takaaki Kakitsuka, Shinji Matsuo

Optica Advanced Photonics Congress 2023, Busan, Korea ITu2A.3 2023.07 [Invited]
High-Baud-Rate Direct Modulation of Membrane Laser on SiC with Uncooled Condition

Suguru Yamaoka, Nikolaos-Panteleimon Diamantopoulos, Hidetaka Nishi, Takuro Fujii, Koji Takeda, Tatsurou Hiraki, Shigeru Kanazawa, Takaaki Kakitsuka, Shinji Matsuo

IEEE Silicon Photonics Conference 2023, Arlington, USA WA6 2023.04 [Invited]
256-Gbit/s PAM-4 directly modulated membrane lasers on SiC substrate

Suguru Yamaoka, Nikolaos-Panteleimon Diamantopoulos, Hidetaka Nishi, Takuro Fujii, Koji Takeda, Tatsurou Hiraki, Takuma Tsurugaya, Shigeru Kanazawa, Hiromasa Tanobe, Takaaki Kakitsuka, Tai Tsuchizawa, Fumio Koyama, Shinji Matsuo

The 15th Pacific Rim Conference on Lasers and Electro-Optics (CLEO-PR 2022), Sapporo, Japan CMP11B-01 2022.07 [Invited]
Membrane InP-based Modulator and Laser on Si

Tatsurou Hiraki, Takuma Aihara, Takuro Fujii, Koji Takeda, Yoshiho Maeda, Tai Tsuchizawa, Takaaki Kakitsuka, Kiyoto Takahata, Shinji Matsuo

2021 IEEE 17th International Conference on Group IV Photonics (GFP) WA2 2021.12 [Invited]

DOI
100-GHz-class directly modulated membrane lasers on SiC substrate

Suguru Yamaoka, Nikolaos-Panteleimon Diamantopoulos, Hidetaka Nishi, Takuro Fujii, Koji Takeda, Tatsurou Hiraki, Takuma Tsurugaya, Shigeru Kanazawa, Hiromasa Tanobe, Takaaki Kakitsuka, Tai Tsuchizawa, Fumio Koyama, Shinji Matsuo

2021 27th International Semiconductor Laser Conference (ISLC) MP2.8 2021.10 [Invited]

DOI
Membranes underpin masterful modulation

Suguru Yamaoka, Nikolaos-Panteleimon Diamantopoulos, Hidetaka Nishi, Takaaki Kakitsuka, Fumio Koyama, Shinji Matsuo

Compound Semiconductor Magazine 27 ( 6 ) 52 - 57 2021.09 [Invited]
Ultrahigh-speed directly modulated membrane lasers on SiC

Suguru Yamaoka, Nikolaos-Panteleimon Diamantopoulos, Hidetaka Nishi, Ryo Nakao, Takuro Fujii, Koji Takeda, Tatsurou Hiraki, Shigeru Kanazawa, Hiromasa Tanobe, Takaaki Kakitsuka, Tai Tsuchizawa, Fumio Koyama, Shinji Matsuo

OSA Advanced Photonics Congress (APC 2020) NeTh1B.2 2020.07 [Invited]
Membrane III-V semiconductor devices for Si Photonics

Tatsurou Hiraki, Takuma Aihara, Takuro Fujii, Koji Takeda, Takaaki Kakitsuka, Tai Tsuchizawa, Shinji Matsuo

Compound Semiconductor Magazine 26 ( 5 ) 22 - 26 2020.07 [Invited]
High-efficiency membrane InGaAsP Mach-Zehnder modulator on Si platform

Tatsurou Hiraki, Takuma Aihara, Koji Takeda, Takuro Fujii, Takaaki Kakitsuka, Tai Tsuchizawa, Hiroshi Fukuda, Shinji Matsuo

The conference on Smart Photonic and Optoelectronic Integrated Circuits XXII, SPIE OPTO, Photonic West, San Francisco, USA 11284-22 2020.02 [Invited]

Article, review, commentary, editorial, etc. (international conference proceedings)
Lateral-current-injection membrane laser diode directly bonded to SiC substrate

Ryo Nakao, Suguru Yamaoka, Takuro Fujii, Koji Takeda, Tatsurou Hiraki, Hideaka Nishi, Takaaki Kakitsuka, Tai Tsuchizawa, Shinji Matsuo

2019 Korean Physical Society Fall Meeting, Gwangju, Korea D10.05 2019.10 [Invited]

Article, review, commentary, editorial, etc. (international conference proceedings)
Heterogeneously integrated membrane III-V/Si photonic devices

Tatsurou Hiraki, Takuma Aihara, Koji Takeda, Takuro Fujii, Hidetaka Nishi, Takaaki Kakitsuka, Tai Tsuchizawa, Hiroshi Fukuda, Shinji Matsuo

The 10th International Conference on Metamaterials, Photonic Crystals and Plasmonics (META2019), Lisbon, Portugal 3A8 2019.07 [Invited]
Membrane-based DMLs-on-Si for Energy-efficient 400GbE SDM Transmission

Nikolaos Panteleimon Diamantopoulos, Kota Shikama, Hidetaka Nishi, Takuro Fujii, Takashi Matsui, Takaaki Kakitsuka, Hiroshi Fukuda, Kazuhide Nakajima, Shinji Matsuo

OSA Advanced Photonics Congress, Montreal, Canada NeM3D.5 2019.07 [Invited]

DOI
III-V membrane lasers integrated with Si nanowire waveguide

Takuma Aihara, Tatsurou Hiraki, Koji Takeda, Koichi Hasebe, Takuro Fujii, Tai Tsuchizawa, Takaaki Kakitsuka, Shinji Matsuo

SPIE OPTO, San Francisco, USA 109390T 2019.03 [Invited]

DOI
Ultra-high efficiency III-V on Si MOS capacitor Mach-Zehnder modulator

T. Aihara, T. Hiraki, K. Hasebe, T. Fujii, K. Takeda, T. Tsuchizawa, T. Kakitsuka, H. Fukuda, S. Matsuo

SPIE/COS Photonics Asia, 2018, Beijing, China 10823-8 2018.10 [Invited]

DOI
Heterogeneous Integration of III-V Semiconductors on Si Photonics Platform

T. Hiraki, T. Aihara, K. Hasebe, T. Fujii, K. Takeda, H. Nishi, T. Kakitsuka, H. Fukuda, T. Tsuchizawa, S. Matsuo

AiMES 2018 ECS and SMEQ Joint International Meeting, Cancun, Mexico 86 11 - 16 2018.09 [Invited]

DOI
III-V/Si Photonic Integration Platform for On-Si Laser Diodes and High Efficiency Mach-Zehnder Modulators

T. Hiraki, T. Aihara, K. Takeda, T. Fujii, T. Kakitsuka, T. Tsuchizawa, H. Fukuda, S. Matsuo

International Conference on Solid State Devices and Materials (SSDM 2018), Tokyo H-3-04 2018.09 [Invited]
III-V membrane buried heterostructure lasers on SiO$_2$/Si substrate

Tomonari Sato, Takuro Fujii, Koji Takeda, Takaaki Kakitsuka, Hiroshi Fukuda, Tai Tsuchizawa, Shinji Matsuo

OSA Frontiers in Optics + Laser Science APS/DLS (FiO+LS 2018) 2018.09 [Invited]

DOI
III-V/Si Integration Platform for Laser Diodes and Mach-Zehnder Modulators

Tatsurou Hiraki, Takuma Aihara, Koichi Hasebe, Koji Takeda, Takuro Fujii, Takaaki Kakitsuka, Tai Tsuchizawa, Hiroshi Fukuda, Shinji Matsuo

2018 Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR 2018), Hong Kong Th2J.2 2018.07 [Invited]

DOI
Heterogeneously Integrated III-V/Si Mach-Zehnder Modulator

T. Hiraki, T. Aihara, K. Hasebe, T. Fujii, K. Takeda, T. Tsuchizawa, T. Kakitsuka, H. Fukuda, S. Matsuo

23rd Opto-Electronics and Communications Conference (OECC 2018), Jeju, Korea 4D1-1 2018.07 [Invited]

DOI
Novel photonic integration for large-bandwidth and powerefficient lasers and modulators

S. Matsuo, T. Hiraki, H. Nishi, T. Fujii, K. Takeda, T. Aihara, T. Tsuchizawa, T. Kakitsuka, H. Fukuda

Advanced Photonics Congress 2018 (BGPP, IPR, NP, Networks,NOMA, Sensors, SOF, SPPCom) , Z?rich, Switzerland ITu4B.2 2018.07 [Invited]

DOI
Ultrahigh efficiency III-V on Si MOS capacitor optical modulator

T. Hiraki, T. Aihara, K. Hasebe, T. Fujii, K. Takeda, T. Tsuchizawa, T. Kakitsuka, H. Fukuda, S. Matsuo

SPIE Photonics Europe, Strasbourg, France 10689-19 2018.04 [Invited]

DOI
Integrated nanocavity lasers

Shinji Matsuo, Koji Takeda, Takuro Fujii, Tomonari Sato, Takaaki Kakitsuka

The 48th Winter Colloquium on the Physics of Quantum Electronics (PQE 2018), Snowbird, USA 2018.01 [Invited]
III-V Membrane Lasers on Silicon for Datacom and Computercom Applications

T. Kakitsuka, T. Fujii, K. Takeda, H. Nishi, S. Matsuo

Photonics-Optics Technology Oriented Networking, Information and Computing Systems (PHOTONICS), Austin, USA 2017.02 [Invited]
SiO$_x$N$_y$ back-end integration technologies for heterogeneously integrated Si platform

H. Nishi, T. Tsuchizawa, T. Kakitsuka, K. Hasebe, K. Takeda, T. Hiraki, T. Fujii, T. Yamamoto, S. Matsuo

Pacific Rim Meeting on Electrochemical and Solid-state Science (PRiME 2016), Honolulu, USA G05-1938 2016.10 [Invited]

DOI
Membrane DFB and photonic crystal lasers on Si

Shinji Matsuo, Koji Takeda, Takuro Fujii, Hidetaka Nishi, Takaaki Kakitsuka

The 25th International Semiconductor Laser Conference (ISLC 2016), Kobe, Japan ThC1 2016.09 [Invited]
Electrically Driven Photonic Crystal Lasers

Shinji Matsuo, Koji Takeda, Takuro Fujii, Takaaki Kakitsuka

The Review of Laser Engineering 44 ( 8 ) 497 - 501 2016.08 [Invited]
Directly Modulated Membrane DFB Lasers and Photonic Crystal Lasers

S. Matsuo, K. Takeda, T. Fujii, H. Nishi, T. Kakitsuka

2016 IEEE Photonics Society Summer Topical Meeting Series (SUM), Newport Beach, USA 2016.07 [Invited]
Epitaxial growth on lattice-mismatched substrate for high-performance lasers

Ryo Nakao, Masakazu Arai, Wataru Kobayashi, Takaaki Kakitsuka, Tsuyoshi Yamamoto, Shinji Matsuo

2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016, Toyama, Japan MoC3-2 2016.06 [Invited]

DOI
Electrically driven nanocavity lasers on silicon with photonic-crystal cavity and ultrasmall buried heterostructure

K. Takeda, T. Fujii, A. Shinya, E. Kuramochi, M. Notomi, K. Hasebe, T. Kakitsuka, S. Matsuo

International Nanotechnology Conference & Expo, Boltimore, USA 2016.04 [Invited]
Integrated Nanophotonics for fJ/Bit on-Chip Optical Communications

A. Shinya, K. Nozaki, E. Kuramochi, K. Takeda, T. Kakitsuka, H. Taniyama, T. Fujii, K. Hasebe, S. Mastuo, M. Notomi

Design, Automation and Test in Europe (DATE), Dresden, Germany 2016.03 [Invited]
Photonic-crystal lasers on silicon for chip-scale optical interconnects

Koji Takeda, Takuro Fujii, Akihiko Shinya, Eiichi Kuramochi, Masaya Notomi, Koichi Hasebe, Takaaki Kakitsuka, Shinji Matsuo

Photonics West 2016 Proc. SPIE 9767, Novel In-plane semiconductor lasers XV 976710 2016.02 [Invited]

DOI
Lateral Current-injection Membrane Lasers Fabricated on a Silicon Substrate

Takaaki Kakitsuka, Takuro Fujii, Koji Takeda, Hidetaka Nishi, Tomonari Sato, Koichi Hasebe, Tai Tsuchizawa, Tsuyoshi Yamamoto, Koji Yamada, Shinji Matsuo

NTT Technical Review 14 ( 1 ) 2016.01
Low-operating-energy directly modulated lasers on Si

Shinji Matsuo, Takaaki Kakitsuka

AIM Photonics Institute Meeting, Implementing Photonic Integration, Cambridge, USA 2015.12 [Invited]
ネットワークの性能極限を目指す光電子融合ハードウェア技術シリコン基板上集積横注入薄膜レーザ

硴塚孝明, 藤井拓郎, 武田浩司, 西英隆, 佐藤具就, 長谷部浩一, 土澤泰, 山本剛, 山田浩治, 松尾慎治

NTT技術ジャーナル 27 ( 11 ) 23 - 26 2015.11
On-silicon integration of compact and energy-efficient DFB laser with 40-Gbit/s direct modulation

Shinji Matsuo, Takuro Fujii, Koji Takeda, Hidetaka Nishi, Koichi Hasebe, Takaaki Kakitsuka

2015 IEEE 12th International Conference on Group IV Photonics, Vancouver, Canada WF1 2015.08 [Invited]

DOI
InP-based membrane optical devices for large-scale photonic integrated circuits

Takaaki Kakitsuka, Koichi Hasebe, Takuro Fujii, Tomonari Sato, Koji Takeda, Shinji Matsuo

NTT Technical Review 13 ( 5 ) 2015.01
Photonic crystal lasers for computercom applications

Takaaki Kakitsuka, Shinji Matsuo

2014 Photonic Networks and Devices (NETWORKS 2014), San Diego, USA NT2C 2014.07 [Invited]

DOI
High temperature operation of lambda-scale embedded active-region photonic-crystal lasers

T. Sato, K. Takeda, A. Shinya, K. Nozaki, H. Taniyama, K. Hasebe, T. Kakitsuka, M. Notomi, S. Matsuo

2013 IEEE Photonics Conference (IPC 2013), Bellevue, USA TuE3.1 2013.09 [Invited]

DOI
Current-injection photonic-crystal lasers with ultra-low power consumption

T. Kakitsuka

14th Chitose International Forum on Photonics Science and Technology (CIF), Chitose, Japan 2013.07 [Invited]
Ultralow-threshold electrically driven photonic-crystal nanocavity laser

T. Sato, K. Takeda, A. Shinya, K. Nozaki, H. Taniyama, K. Hasebe, T. Kakitsuka, M. Notomi, S. Matsuo

2013 Conference on Lasers and Electro-Optics Pacific Rim (CLEOPR) ThK3 2013.06 [Invited]

DOI
Electrically driven photonic-crystal lasers using an ultra-compact embedded active region

T. Sato, K. Takeda, A. Shinya, K. Nozaki, H. Taniyama, K. Hasebe, T. Kakitsuka, M. Notomi, S. Matsuo

2013 IEEE Photonics Society Summer Topical Meeting Series, PSSTMS 2013 36 - 37 2013 [Invited]

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We have successfully developed an electrically driven photonic-crystal nanocavity laser. Thanks to the development of an ultra-compact embedded active-region structure, a record low threshold current and energy needed for transferring a single bit are achieved. © 2013 IEEE.

DOI
Current-injection photonic-crystal laser

Takaaki Kakitsuka, Shinji Matsuo

NTT Technical Review 10 ( 12 ) 2012.12
Electrically-pumped photonic crystal lasers for optical communications

S. Matsuo, K. Takeda, T. Sato, M. Notomi, A. Shinya, K. Nozaki, H. Taniyama, K. Hasebe, T. Kakitsuka

European Conference and Exhibition on Optical Communication (ECOC 2012), Amsterdam, Netherland Th.1.E 2012.09 [Invited]

DOI
Extremely low power nanophotonic devices based on photonic crystals

K. Nozaki, A. Shinya, T. Tanabe, S. Matsuo, T. Sato, T. Kakitsuka, E. Kuramochi, H. Taniyama, M. Notomi

Photonics in Switching (PS 2010), Monterey, USA PWE1 2010.07 [Invited]

DOI
Low-power and high-speed operation of InGaAsP/InP photonic crystal nanocavity laser using wavelength-sized buried heterostructure

Akihiko Shinya, Shinjl Matsuo, Takaaki Kakitsuka, Kengo Nozaki, Toru Segawa, Tomonari Sato, Yoshihiro Kawaguchi, Masaya Notomi

Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications (CLEO/QELS 2010), San Jose, USA CWK1 2010.07 [Invited]

DOI
InP-Based Photonic Integrated Circuits

S. Matsuo, T. Segawa, T. Kakitsuka, Y. Shibata, A. Shinya, M. Notomi, T. Sato, Y. Kawaguchi

2010 Conference on Optical Fiber Communication, Collocated National Fiber Optic Engineers Conference (OFC/NFOEC 2010), San Diego, USA OWD2 2010.03 [Invited]

DOI
All-optical memories based on photonic crystal nanocavities

A. Shinya, S. Matsuo, K. Nozaki, T. Tanabe, E. Kuramochi, T. Sato, T. Kakitsuka, M. Notomi

2009 International Conference on Photonics in Switching (PS 2009), Pisa, Italy ThI3-1 2009.09 [Invited]

DOI
InP-based optical semiconductor devices

Takaaki Kakitsuka

光産業技術動向調査報告 2009.03
OFC/NFOEC2009 report

Takaaki Kakitsuka

光産業技術動向調査報告書 2009.03
Frequency modulated, wavelength-agile DBR lasers extend transmission reach

S. Matsuo, T. Kakitsuka

SPIE Newsroom 10.1117/2.1200810.1338 2008.10 [Invited]
Frequency modulated widely tunable SSG-DBR laser with optial filtering for extended transmission reach

S. Matsuo, T. Kakitsuka

2008 Asia-Pacific Optical Communications (APOC), Hangzhou, China WJ2 2008.10 [Invited]
On-chip all-optical processing based on photonic crystal nanocavities

M. Notomi, A. Shinya, T. Tanabe, E. Kuramochi, H. Taniyama, S. Matsuo, T. Kakitsuka, T. Sato

2008 Asia Optical Fiber Communication and Optoelectronic Exposition and Conference (AOE 2008), Shanghai, China SuD4 2008.10 [Invited]

DOI
Frequency modulated widely tunable SSG-DBR laser with optical filtering for extended transmission reach

S. Matsuo, T. Kakitsuka

International Symposium on VCSELs and Integrated Photonics, Tokyo, Japan 2007.12
InP-based photonic integrated devices

Shinji Matsuo, Hiroyuki Ishii, Toru Segawa, Takaaki Kakitsuka, Hiromi Oohashi

2007 Asia Optical Fiber Communication and Optoelectronic Exposition and Conference (AOE 2007), Shanghai, China SC2.S4.2 2007.10 [Invited]

DOI
Semiconductor tunable lasers based on integrated waveguide filters for wavelength routing applications

Takaaki Kakitsuka, Shinji Matsuo, Toru Segawa, Hiroyuki Suzuki

Integrated Photonics and Nanophotonics Research and Applications (IPNRA 2007), Salt Lake City, USA IMA 2007.07 [Invited]

DOI
MEMS manipulation of electronic states in single quantum dots

T. Nakaoka, T. Kakitsuka, T. Saito, Y. Arakawa

Frontiers of Nanoscale Science and Technology, Tokyo, Japan 2003.07
Amplifying light-semiconductor optical amplifiers and integrated devices

Y. Shibata, T. Kakitsuka, I. Ogawa, Y. Tohmori

NTT R and D 50 622 - 629 2001.01

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Industrial Property Rights

半導体レーザ

特許第6853768号

藤原直樹, 佐野公一, 石井啓之, 上田悠太, 硴塚孝明, 松崎秀昭, 金井拓也

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半導体装置およびその製造方法

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相原卓磨, 松尾慎治, 硴塚孝明, 開達郎

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半導体光素子

特許第6783569号

中尾亮, 硴塚孝明, 松尾慎治

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半導体光素子

特許第6738488号

中尾亮, 硴塚孝明, 松尾慎治

Rights holder：日本電信電話株式会社

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半導体レーザ

特許第6588858号

硴塚孝明, 西英隆, 松尾慎治, 藤井拓郎, 武田浩司, 長谷部浩一

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半導体レーザ

特許第6588859号

硴塚孝明, 西英隆, 松尾慎治, 藤井拓郎, 武田浩司, 長谷部浩一

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特許第6588837号

藤井拓郎, 松尾慎治, 硴塚孝明

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特許第6510391号

硴塚孝明, 松尾慎治

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特許第6470127号

長谷部浩一, 硴塚孝明, 松尾慎治

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半導体レーザ

特許第6483521号

硴塚孝明, 新家昭彦, 松尾慎治

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特許第6315600号

硴塚孝明, 長谷部浩一, 松尾慎治

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フォトニック結晶共振器

特許第6162665号

新家昭彦, 納富雅也, 松尾慎治, 野崎謙悟, 武田浩司, 倉持栄一, 硴塚孝明

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光回路

特許第6279994号

新家昭彦, 納富雅也, 松尾慎治, 野崎謙悟, 武田浩司, 倉持栄一, 硴塚孝明

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光回路

特許第6279983号

新家昭彦, 納富雅也, 松尾慎治, 野崎謙悟, 武田浩司, 倉持栄一, 硴塚孝明

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半導体光素子

特許第6267584号

硴塚孝明, 長谷部浩一, 佐藤具就, 武田浩司, 藤井拓郎, 松尾慎治

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半導体光素子

特許第6209129号

硴塚孝明, 長谷部浩一, 佐藤具就, 武田浩司, 藤井拓郎, 松尾慎治

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光記憶装置

特許第5483655号

硴塚孝明, 武田浩司, 佐藤具就, 長谷部浩一, 松尾慎治

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フォトニック結晶デバイス

特許第5695135号

新家昭彦, 納富雅也, 松尾慎治, 野崎謙悟, 武田浩司, 倉持栄一, 硴塚孝明

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フォトニック結晶共振器

特許第5596825号

新家昭彦, 納富雅也, 野崎謙悟, 倉持栄一, 松尾慎治, 硴塚孝明, 武田浩司

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進行波電極型光変調器

特許第6088349号

山田英一, 硴塚孝明, 柴田泰夫, 菊池順裕

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光変調素子および光変調素子の駆動方法

特許第6151958号

硴塚孝明, 長谷部浩一, 松尾慎治

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光サブキャリア生成装置

特許第6151954号

長谷部浩一, 硴塚孝明, 松尾慎治

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特許第5945241号

長谷部浩一, 硴塚孝明, 松尾慎治

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フォトニック結晶デバイス

特許第5662494号

武田浩司, 硴塚孝明, 松尾慎治, 野崎謙悟

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光半導体素子

特許第5918611号

佐藤具就, 硴塚孝明, 長谷部浩一, 武田浩司, 松尾慎治

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半導体波長可変レーザ

特許第5458194号

瀬川徹, 松尾慎治, 硴塚孝明

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光変調信号生成装置及び光変調信号生成方法

特許第5373653号

硴塚孝明, 松尾慎治, 柴田泰夫, 瀬川徹

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フォトニック結晶デバイス

特許第5363578号

松尾慎治, 硴塚孝明, 納富雅也, 新家昭彦

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光信号処理装置

特許第5189956号

硴塚孝明, 松尾慎治, 瀬川徹, 柴田泰夫

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半導体波長可変レーザ

特許第5001239号

松尾慎治, 硴塚孝明, 瀬川徹

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半導体光増幅器

特許第4944813号

満原学, 佐藤具就, 柴田泰夫, 深野秀樹, 藤澤剛, 硴塚孝明, 近藤康洋

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半導体レーザモジュールおよびレーザ光源

特許第4719198号

曲克明, 硴塚孝明, 柳川勉, 西田好毅, 忠永修, 梅木毅伺, 遊部雅生, 鈴木博之

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半導体波長可変レーザ

特許第4942429号

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電磁波発生素子

特許第4454523号

富田勲, 竹ノ内弘和, 松尾慎治, 硴塚孝明, 瀬川徹, 宮津純, 味戸克裕, 鈴木博之

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半導体装置

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荒川泰彦, 中岡俊裕, 斎藤敏夫, 硴塚孝明

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Syllabus

Topics in Fundamental Science and Engineering C

School of Fundamental Science and Engineering

2024 spring semester
Topics in Fundamental Science and Engineering C

School of Fundamental Science and Engineering

2024 spring semester
Topics in Fundamental Science and Engineering C

School of Fundamental Science and Engineering

2024 spring semester
Topics in Fundamental Science and Engineering C

School of Fundamental Science and Engineering

2024 spring semester
Topics in Fundamental Science and Engineering C

School of Fundamental Science and Engineering

2024 spring semester
Light Emitting Systems D

Graduate School of Information, Production and Systems

2024 fall semester
Light Emitting Systems C

Graduate School of Information, Production and Systems

2024 spring semester
Light Emitting Systems B

Graduate School of Information, Production and Systems

2024 spring semester
Light Emitting Systems A

Graduate School of Information, Production and Systems

2024 fall semester
Light Emitting Systems

Graduate School of Information, Production and Systems

2024 fall semester
Light Emitting Systems Research (Fall)

Graduate School of Information, Production and Systems

2024 fall semester
Optical Circuit Simulation Technology

Graduate School of Information, Production and Systems

2024 fall semester
Laser Engineering

Graduate School of Information, Production and Systems

2024 spring semester
Light Emitting Systems Research (Spring)

Graduate School of Information, Production and Systems

2024 spring semester
Master's Thesis (Integrated Systems)(Fall)

Graduate School of Information, Production and Systems

2024 fall semester
Master's Thesis (Integrated Systems)(Spring)

Graduate School of Information, Production and Systems

2024 spring semester
Solid State Physics

Graduate School of Information, Production and Systems

2024 spring semester
Light Emitting Systems Research (Doctor's Thesis)

Graduate School of Information, Production and Systems

2024 full year
Light Emitting Systems Research (Fall)

Graduate School of Information, Production and Systems

2024 fall semester
Light Emitting Systems Research (Spring)

Graduate School of Information, Production and Systems

2024 spring semester

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Sub-affiliation

Faculty of Science and Engineering School of Fundamental Science and Engineering

Research Institute

2022

-

2024

Waseda Research Institute for Science and Engineering Concurrent Researcher

Internal Special Research Projects

トポロジカル光導波路を用いた光集積回路の研究

2023

　View Summary

近年、トポロジーの概念を光制御に適用したトポロジカルフォトニクスが注目を浴びており、一方向性光伝搬等の新奇な特性が報告されている。一方でフォトニック結晶を用いたトポロジカル光導波路は一般的な導波路との結合効率が低い課題があり、結合効率の向上により、トポロジカル光導波路と既存のシリコンフォトニクス集積デバイスとの融合が期待される。本研究では、シリコン細線導波路とトポロジカル光導波路の結合の改善をシミュレーションにより検討した。SOIスラブ構造に三角エアホールを有するハニカム構造からなるフォトニック結晶を形成し、エアホールサイズの異なる２領域を面内で接合することで、接合界面にトポロジカルエッジ状態を生成してトポロジカル光導波路を形成した。この光導波路の両端にシリコン細線の光入出力導波路を設けて波長1.55μmにおける光伝搬をシミュレーションした。フォトニック結晶側にテーパ状の欠陥構造を導入したモード変換構造と、テーパに加えて接合界面に欠陥構造による共振器を形成したモード変換構造を2次元の有限要素法解析により比較した。テーパ状のモード変換構造により、シリコン細線入出力導波路間で45%の透過率が得られることを示し、細線導波路の伝搬モードとトポロジカル光導波路の光渦モード間の高効率な変換が得られることを示した。共振器構造は局所的に60%を超える結合が得られる一方で波長依存性が大きく、テーパ構造によるモード変換が有用である。また、テーパ構造の3次元シミュレーションを行い、細線導波路とフォトニック結晶導波路間でおいて54%の結合効率を得た。これらのモード変換構造はトポロジカルフォトニック結晶と既存光導波路デバイスの集積に向けて有用である。
複素結合型回折格子を用いた単一モード半導体レーザの研究

2023

　View Summary

光ファイバ通信用光源における周波数制御の重要性が高まり、デジタルコヒーレント通信用の狭線幅レーザ、データセンタ用の高速直接変調レーザにおける周波数変動の抑制は、光ファイバ通信の高速化および長延化に向けた重要課題である。本研究では、複素結合型回折格子構造を用いた、単一モード半導体レーザの周波数変動の抑制手法を数値シミュレーションにより検討した。シリコン基板上のInP薄膜層内に埋込量子井戸活性層とパッシブ層を周期的に配置した分布帰還(DFB)型活性層を形成し、屈折率結合と利得結合からなる複素結合回折格子を構成した。併せて、モード選択機能を有する複素結合回折格子DFBの後段に分布ブラッグ反射鏡を配置した分布反射型(DR)レーザを構成して波長選択性を向上した。活性層領域よりパッシブ領域の実効屈折率が高い逆相複素結合回折格子を構成することで、活性層内のキャリア密度変動に伴う発振波長の変動を抑制できる。活性層のキャリア密度変動に伴う屈折率変動と利得変動に対して、回折格子の結合係数の変化に伴う閾値利得変動を与えて発振波長の変動を抑制し、実効線幅増大係数を75％低減できることを示した。また、Q値の高いレーザにおいては単一モード発振に対する空間ホールバーニング効果の影響が課題であることから、逆相複素結合回折格子DRレーザにおける空間ホールバーニング効果の影響をモード結合理論による数値シミュレーションにより調べた。解析の結果、逆相複素結合回折格子DRレーザが空間ホールバーニング効果に対する単一モード発振の安定化機構を有していることを示した。本構造は、狭線幅レーザおよび低チャープ直接変調レーザへの適用に有効であり、加えて高い端面反射耐性が期待されることから、オンチップ光集積用光源として有望であることを示した。
大規模光集積回路における半導体レーザの発振モード安定化の研究

2020

　View Summary

ネットワークの通信トラフィック量が増大を続けており、光データ通信の更なる大容量化に向けてシリコン基板上のアレイ光源集積が期待されている。一方、高密度集積に向けては光回路内の光反射による半導体レーザの発振モードの不安定化が課題である。本研究では、シリコン基板上集積半導体レーザの反射耐性向上をめざしたメンブレンレーザを検討した。高結合係数を有する分布帰還型(DFB)活性層領域と分布ブラッグ反射器(DBR)領域の組み合わせにより、活性層のキャリア揺らぎの影響を抑制する共振器構造を設計し、実効線幅増大係数の低減によって、DFB構造に対し反射耐性を約18 dB改善できることを数値解析により明らかにした。