2021/12/08 更新

写真a

カキツカ タカアキ
硴塚 孝明
所属
理工学術院 大学院情報生産システム研究科
職名
准教授

兼担

  • 理工学術院   基幹理工学部

学内研究所等

  • 2020年
    -
    2022年

    理工学術院総合研究所   兼任研究員

学歴

  • 2009年04月
    -
    2012年03月

    九州大学   大学院総合理工学府   量子プロセス理工学専攻  

  • 1994年04月
    -
    1996年03月

    九州大学   大学院理学研究科   物理学専攻  

  • 1990年04月
    -
    1994年03月

    九州大学   理学部   物理学科  

学位

  • 九州大学   博士(工学)

経歴

  • 2019年04月
    -
    継続中

    早稲田大学   理工学術院 大学院情報生産システム研究科   准教授

  • 1996年04月
    -
    2019年03月

    日本電信電話株式会社

  • 2017年
    -
    2018年

    九州大学   大学院システム情報科学研究院   客員教授

所属学協会

  •  
     
     

    電子情報通信学会

  •  
     
     

    IEEE

  •  
     
     

    応用物理学会

  •  
     
     

    日本物理学会

 

研究分野

  • 電子デバイス、電子機器

研究キーワード

  • 光エレクトロニクス

  • フォトニクス

  • 光デバイス

論文

  • 38-fJ/bit Direct Modulation of a 5-μm-long Active Region Membrane DBR Laser on SiO2/Si Substrate

    Erina Kanno, Koji Takeda, Takuro Fujii, Takaaki Kakitsuka, Shinji Matsuo

    27th International Semiconductor Laser Conference (ISLC 2021)   WA1.1  2021年10月  [査読有り]

  • 2-channel 112-Gbps NRZ Short-Reach Transmissions Based on 60-GHz-Bandwidth Directly-Modulated Membrane Laser Array on Si

    Nikolaos-Panteleimon Diamantopoulos, Takuro Fujii, Suguru Yamaoka, Hidetaka Nishi, Koji Takeda, Tai Tsuchizawa, Toru Segawa, Takaaki Kakitsuka, Shinji Matsuo

    2021 47th European Conference on Optical Communication (ECOC 2021), Bordeaux, France   Tu3D.3  2021年09月  [査読有り]

  • Optical links on silicon photonic chips using ultralow-power consumption photonic-crystal lasers

    Koji Takeda, Takuma Tsurugaya, Takuro Fujii, Akihiko Shinya, Yoshiho Maeda, Tai Tsuchizawa, Hidetaka Nishi, Masaya Notomi, Takaaki Kakitsuka, Shinji Matsuo

    Optics Express   29 ( 16 ) 26082 - 26082  2021年08月  [査読有り]

    DOI

  • 50-GHz-bandwidth Membrane InGaAsP Electro-absorption Modulator on Si Platform

    Tatsurou Hiraki, Takuma Aihara, Yoshiho Maeda, Takuro Fujii, Tai Tsuchizawa, Kiyoto Takahata, Takaaki Kakitsuka, Shinji Matsuo

    Journal of Lightwave Technology   39 ( 16 ) 5300 - 5306  2021年05月  [査読有り]

    DOI

  • Effects of intermediate SiO2 bonding thickness on thermal properties of membrane distributed reflector lasers on SiC substrates

    Suguru Yamaoka, Ryo Nakao, Takuro Fujii, Koji Takeda, Tatsurou Hiraki, Hidetaka Nishi, Takaaki Kakitsuka, Tai Tsuchizawa, Shinji Matsuo

    Compound Semiconductor Week 2021 (CSW 2021)   TuC2-4  2021年05月  [査読有り]

  • Widely tunable laser with lattice filter on Si photonic platform

    Takuma Aihara, Tatsurou Hiraki, Takuro Fujii, Koji Takeda, Tai Tsuchizawa, Takaaki Kakitsuka, Hiroshi Fukuda, Shinji Matsuo

    Compound Semiconductor Week 2021 (CSW 2021)   TuA2-5  2021年05月  [査読有り]

  • High-temperature Operation of Integrated Membrane DFB Laser with InGaAsP Mach-Zehnder Modulator on Si Platform

    Tatsurou Hiraki, Takuma Aihara, Takuro Fujii, Koji Takeda, Yoshiho Maeda, Tai Tsuchizawa, Takaaki Kakitsuka, Shinji Matsuo

    Compound Semiconductor Week 2021 (CSW 2021)   TuA2-4  2021年05月  [査読有り]

  • Development of an Epitaxial Growth Technique Using III-V on a Si Platform for Heterogeneous Integration of Membrane Photonic Devices on Si

    Takuro Fujii, Tatsurou Hiraki, Takuma Aihara, Hidetaka Nishi, Koji Takeda, Tomonari Sato, Takaaki Kakitsuka, Tai Tsuchizawa, Shinji Matsuo

    Applied Sciences   11 ( 4 ) 1801 - 1801  2021年02月  [査読有り]

    DOI

  • 47.5 GHz Membrane-III-V-on-Si Directly Modulated Laser for Sub-pJ/bit 100-Gbps Transmission

    Nikolaos-Panteleimon, Pandelis) Diamantopoulos, Suguru Yamaoka, Takuro Fujii, Hidetaka Nishi, Koji Takeda, Tai Tsuchizawa, Takaaki Kakitsuka, Shinji Matsuo

    Photonics   8 ( 2 ) 31 - 31  2021年01月  [査読有り]

    DOI

  • Integration of a high-efficiency Mach-Zehnder modulator with a DFB laser using membrane InP-based devices on a Si photonics platform

    Tatsurou Hiraki, Takuma Aihara, Takuro Fujii, Koji Takeda, Yoshiho Maeda, Takaaki Kakitsuka, Tai Tsuchizawa, Shinji Matsuo

    Optics Express   29 ( 2 ) 2431 - 2431  2021年01月  [査読有り]

    DOI

  • 50-GHz-bandwidth Electro-absorption Modulator with Membrane InGaAsP Lateral p-i-n Diode on Si Platform

    Tatsurou Hiraki, Takuma Aihara, Yoshiho Maeda, Takuro Fujii, Tai Tsuchizawa, Kiyoto Takahata, Takaaki Kakitsuka, Shinji Matsuo

    The 46th European Conference on Optical Communication (ECOC 2020), Brussels, Belgium   Tu1B-4  2020年12月  [査読有り]

    DOI

  • Heterogeneously Integrated Membrane DFB Laser and Si Mach-Zehnder Modulator on Si Photonics Platform

    Takuma Aihara, Tatsurou Hiraki, Takuro Fujii, Koji Takeda, Tai Tsuchizawa, Takaaki Kakitsuka, Hiroshi Fukuda, Shinji Matsuo

    The 46th European Conference on Optical Communication (ECOC 2020), Brussels, Belgium   Mo2B-5  2020年12月  [査読有り]

    DOI

  • Net 113-Gbps PAM-4 Transmission Using Membrane DML-on-Si with 0.34 pJ/bit at 50oC

    Nikolaos-Panteleimon Diamantopoulos, Suguru Yamaoka, Takuro Fujii, Hidetaka Nishi, Koji Takeda, Tai Tsuchizawa, Takaaki Kakitsuka, Shinji Matsuo

    The 46th European Conference on Optical Communication (ECOC 2020), Brussels, Belgium   Mo2B-4  2020年12月  [査読有り]

    DOI

  • Directly modulated membrane lasers with 108 GHz bandwidth on a high-thermal-conductivity silicon carbide substrate

    Suguru Yamaoka, Nikolaos-Panteleimon Diamantopoulos, Hidetaka Nishi, Ryo Nakao, Takuro Fujii, Koji Takeda, Tatsurou Hiraki, Takuma Tsurugaya, Shigeru Kanazawa, Hiromasa Tanobe, Takaaki Kakitsuka, Tai Tsuchizawa, Fumio Koyama, Shinji Matsuo

    Nature Photonics   15 ( 1 ) 28 - 35  2020年10月  [査読有り]

    DOI

  • >100-GHz Bandwidth Directly-Modulated Lasers and Adaptive Entropy Loading for Energy-Efficient >300-Gbps/λ IM/DD Systems

    Nikolaos-Panteleimon Diamantopoulos, Hiroshi Yamazaki, Suguru Yamaoka, Munehiko Nagatani, Hidetaka Nishi, Hiromasa Tanobe, Ryo Nakao, Takuro Fujii, Koji Takeda, Takaaki Kakitsuka, Hitoshi Wakita, Minoru Ida, Hideyuki Nosaka, Fumio Koyama, Yutaka Miyamoto, Shinji Matsuo

    Journal of Lightwave Technology   39 ( 3 ) 771 - 778  2020年09月  [査読有り]

    DOI

  • Multiwavelength membrane laser array using selective area growth on directly bonded InP on SiO2/Si

    Takuro Fujii, Koji Takeda, Hidetaka Nishi, Nikolaos-Panteleimon Diamantopoulos, Tomonari Sato, Takaaki Kakitsuka, Tai Tsuchizawa, Shinji Matsuo

    Optica   7 ( 7 ) 838 - 838  2020年07月  [査読有り]

    DOI

  • Membrane III-V/Si DFB Laser Using Uniform Grating and Width-Modulated Si Waveguide

    Takuma Aihara, Tatsurou Hiraki, Takuro Fujii, Koji Takeda, Takaaki Kakitsuka, Tai Tsuchizawa, Shinji Matsuo

    Journal of Lightwave Technology   38 ( 11 ) 2961 - 2967  2020年06月  [査読有り]

    DOI

  • Membrane InGaAsP Mach–Zehnder Modulator Integrated With Optical Amplifier on Si Platform

    Tatsurou Hiraki, Takuma Aihara, Takuro Fujii, Koji Takeda, Takaaki Kakitsuka, Tai Tsuchizawa, Shinji Matsuo

    Journal of Lightwave Technology   38 ( 11 ) 3030 - 3036  2020年06月  [査読有り]

    DOI

  • Net 321.24-Gb/s IMDD Transmission Based on a >100-GHz Bandwidth Directly-Modulated Laser

    Nikolaos Panteleimon Diamantopoulos, Hiroshi Yamazaki, Suguru Yamaoka, Munehiko Nagatani, Hidetaka Nishi, Hiromasa Tanobe, Ryo Nakao, Takuro Fujii, Koji Takeda, Takaaki Kakitsuka, Hitoshi Wakita, Minoru Ida, Hideyuki Nosaka, Fumio Koyama, Yutaka Miyamoto, Shinji Matsuo

    The Optical Networking and Communication Conference & Exhibition (OFC 2020), San Diego USA   Post Deadline Paper Th4C.1  2020年03月  [査読有り]

    DOI

  • Mach-Zehnder Modulator using Membrane InGaAsP Phase Shifters and SOAs inside Interferometer Arms on Si Photonics Platform

    Takuma Aihara, Tatsurou Hiraki, Takuro Fujii, Koji Takeda, Takaaki Kakitsuka, Tai Tsuchizawa, Shinji Matsuo

    The Optical Networking and Communication Conference & Exhibition (OFC 2020), San Diego USA   M2B.5  2020年03月  [査読有り]

    DOI

  • 4×56-GBaud PAM-4 SDM Transmission Over 5.9-km 125-μm-Cladding MCF Using III-V-on-Si DMLs

    Nikolaos Panteleimon Diamantopoulos, Hidetaka Nishi, Takuro Fujii, Kota Shikama, Takashi Matsui, Koji Takeda, Takaaki Kakitsuka, Kazuhide Nakajima, Shinji Matsuo

    The Optical Networking and Communication Conference & Exhibition (OFC 2020), San Diego USA   W1D.4  2020年03月  [査読有り]

    DOI

  • Vertical Optical Waveguide Comprising Square Base Cuboid Cores with Size Modulation for Multilayer Chip-to-Chip Interconnection

    Songpin Ran, Takaaki Kakitsuka, Kiyoto Takahata

    8th International Conference on Photonics, Optics and Laser Technology, Valletta, Malta     20-5A  2020年02月  [査読有り]

  • Integrated DFB Laser Diode and High-efficiency Mach-Zehnder Modulator using Membrane III-V Semiconductors on Si Photonics Platform

    Tatsurou Hiraki, Takuma Aihara, Takuro Fujii, Koji Takeda, Takaaki Kakitsuka, Tai Tsuchizawa, Shinji Matsuo

    The 65th International Electron Devices Meeting (IEDM 2019), San Fransisco, USA     33.4  2019年12月  [査読有り]

    DOI

  • Membrane buried-heterostructure DFB laser with an optically coupled III-V/Si waveguide

    Takuma Aihara, Tatsurou Hiraki, Koji Takeda, Takuro Fujii, Takaaki Kakitsuka, Tai Tsuchizawa, Shinji Matsuo

    Optics Express   27 ( 25 ) 36438 - 36448  2019年12月  [査読有り]

    DOI

  • Wide-Wavelength Range Membrane Laser Array Using Selectively Grown InGaAlAs MQWs on InP-on-insulator

    Takuro Fujii, Tomonari Sato, Koji Takeda, Nikolaos-Panteleimon Diamantopoulos, Hidetaka Nishi, Takaaki Kakitsuka, Tai Tsuchizawa, Shinji Matsuo

    The 45th European Conference on Optical Communication (ECOC 2019), Dublin, Ireland     Th.2.D.4  2019年09月  [査読有り]

    DOI

  • Membrane III-V/Si DFB laser with width modulated silicon waveguide for narrowing linewidth

    Takuma Aihara, Tatsurou Hiraki, Takuro Fujii, Koji Takeda, Tai Tsuchizawa, Takaaki Kakitsuka, Shinji Matsuo

    The 45th European Conference on Optical Communication (ECOC 2019), Dublin, Ireland     Th.2.D.5  2019年09月  [査読有り]

    DOI

  • Loss-less operation of membrane III-V semiconductor Mach-Zehnder modulator with optical amplifier on Si platform

    Tatsurou Hiraki, Takuma Aihara, Takuro Fujii, Koji Takeda, Takaaki Kakitsuka, Tai Tsuchizawa, Shinji Matsuo

    The 45th European Conference on Optical Communication (ECOC 2019), Dublin, Ireland     Th.2.A.2  2019年09月  [査読有り]

    DOI

  • 239.3-Gbit/s Net Rate PAM-4 Transmission using Directly Modulated Membrane Lasers on High-Thermal-Conductivity SiC

    Suguru Yamaoka, Nikolaos-Panteleimon Diamantopoulos, Hidetaka Nishi, Ryo Nakao, Takuro Fujii, Koji Takeda, Tatsurou Hiraki, Shigeru Kanazawa, Hiromasa Tanobe, Takaaki Kakitsuka, Tai Tsuchizawa, Fumio Koyama, Shinji Matsuo

    The 45th European Conference on Optical Communication (ECOC 2019), Dublin, Ireland   Post Deadline Paper   PD.2.1  2019年09月  [査読有り]

    DOI

  • Integrated PAM-4 WDM receiver by InGaAsP-based membrane PDs and SiN demultiplexer on Si

    Hidetaka Nishi, Nicolaos-Panteleimon Diamantopoulos, Takuro Fujii, Yoshiho Maeda, Koji Takeda, Tai Tsuchizawa, Takaaki Kakitsuka, Hiroshi Fukuda, Shinji Matsuo

    IEEE Photonics Conference (IPC 2019), San Antonio, USA     MD 1.1  2019年09月  [査読有り]

    DOI

  • Temperature Characteristics of Photonic-Crystal Lasers Coupled to Si Waveguides

    Koji Takeda, Takuro Fujii, Hidetaka Nishi, Eiichi Kuramochi, Akihiko Shinya, Masaya Notomi, Tai Tsuchizawa, Takaaki Kakitsuka, Shinji Matsuo

    Group IV Photonics 2019 (GFP 2019), Singapore     WD2  2019年08月  [査読有り]

    DOI

  • III-V/Si MOS Capacitor Mach-Zehnder Modulator with Low Temperature Sensitivity

    Tatsurou Hiraki, Takuma Aihara, Koji Takeda, Takuro Fujii, Takaaki Kakitsuka, Tai Tsuchizawa, Hiroshi Fukuda, Shinji Matsuo

    Group IV Photonics 2019 (GFP 2019), Singapore     FC4  2019年08月  [査読有り]

    DOI

  • ANN Equalizer for Performance Improvement of PAM-M Signals Using 1.3-$\mu$m Membrane DML-on-Silicon

    Nikolaos Panteleimon Diamantopoulos, Takuro Fujii, Hidetaka Nishi, Koji Takeda, Takaaki Kakitsuka, Shinji Matsuo

    24th OptoElectronics and Communications Conference/International Conference Photonics in Switching and Computing 2019 (OECC/PSC 2019), Fukuoka, Japan     MB-2-2  2019年07月  [査読有り]

    DOI

  • Membrane InGaAsP Mach-Zehnder modulator with SiN:D waveguides on Si platform

    Tatsurou Hiraki, Takuma Aihara, Koji Takeda, Takuro Fujii, Takaaki Kakitsuka, Tai Tsuchizawa, Hiroshi Fukuda, Shinji Matsuo

    Optics Express   27   18612 - 18619  2019年06月  [査読有り]

    DOI PubMed

  • Artificial Neural Network Equalizers for PAM-4 Using DML-on-Silicon

    Nikolaos-Panteleimon Diamantopoulos, Takuro Fujii, Hidetaka Nishi, Koji Takeda, Takaaki Kakitsuka, Shinji Matsuo

    2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC), Munich, Germany     CI-3.2  2019年06月  [査読有り]

    DOI

  • Heterogeneously Integrated Low-Power-Consumption Semiconductor Optical Amplifier on Si Platform

    Tatsurou Hiraki, Takuma Aihara, Koji Takeda, Takuro Fujii, Tai Tsuchizawa, Takaaki Kakitsuka, Shinji Matsuo

    2019 Conference on Lasers and Electro-Optics (CLEO 2019), San Jose, USA     STh3N.1  2019年05月  [査読有り]

    DOI

  • High-Temperature Continuous-Wave Operation of 1.3-$\mu$m Membrane Distributed Reflector Lasers on SiC

    Suguru Yamaoka, Ryo Nakao, Takuro Fujii, Koji Takeda, Tatsurou Hiraki, Hidetaka Nishi, Takaaki Kakitsuka, Tai Tsuchizawa, Shinji Matsuo

    2019 Conference on Lasers and Electro-Optics (CLEO 2019), San Jose, USA     STu3N.6  2019年05月  [査読有り]

    DOI

  • Single-mode Operation of 1.3-μm Membrane Distributed Reflector Lasers on SiC Wafers

    Suguru Yamaoka, Ryo Nakao, Takuro Fujii, Koji Takeda, Tatsurou Hiraki, Hidetaka Nishi, Takaaki Kakitsuka, Tai Tsuchizawa, Shinji Matsuo

    Compound Semiconductor Week 2019 (CSW 2019), Nara, Japan     MoA3-3  2019年05月  [査読有り]

    DOI

  • Photonic-crystal Lasers with Extremely Short Embedded Active-regions

    Takuma Tsurugaya, Koji Takeda, Takuro Fujii, Eiichi Kuramochi, Akihiko Shinya, Masaya Notomi, Takaaki Kakitsuka, Hiroshi Fukuda, Shinji Matsuo

    Compound Semiconductor Week 2019 (CSW 2019), Nara, Japan     ThB1-3  2019年05月  [査読有り]

    DOI

  • Selective-area MOVPE growth of multi-λ InGaAlAs-based MQWs on patterned InP-on-insulator substrate

    Takuro Fujii, Tomonari Sato, Koji Takeda, Takaaki Kakitsuka, Shinji Matsuo

    Compound Semiconductor Week 2019 (CSW 2019), Nara, Japan     ThA2-2  2019年05月  [査読有り]

    DOI

  • 400-Gb/s DMT-SDM transmission based on membrane DML-array-on-silicon

    Nikolaos Panteleimon Diamantopoulos, Kota Shikama, Hidetaka Nishi, Takuro Fujii, Toshiki Kishi, Koji Takeda, Yoshiteru Abe, Takashi Matsui, Takaaki Kakitsuka, Hiroshi Fukuda, Kazuhide Nakajima, Shinji Matsuo

    Journal of Lightwave Technology   37   1805 - 1812  2019年04月  [査読有り]  [招待有り]

    DOI

  • III-V/Si integration technology for laser diodes and Mach-Zehnder modulators

    Tatsurou Hiraki, Takuma Aihara, Koji Takeda, Takuro Fujii, Takaaki Kakitsuka, Tai Tsuchizawa, Hiroshi Fukuda, Shinji Matsuo

    Japanese Journal of Applied Physics   58   SB0803  2019年03月  [査読有り]  [招待有り]

    DOI

  • 56-Gbit/s Operations of Mach-Zehnder Modulators using 300-μm-Long Membrane InGaAsP Phase Shifters and SiN waveguides on Si

    Takuma Aihara, Tatsurou Hiraki, Takuro Fujii, Koji Takeda, Tai Tsuchizawa, Takaaki Kakitsuka, Hiroshi Fukuda, Shinji Matsuo

    2019 Optical Fiber Communications Conference and Exhibition (OFC 2019), San Diego, USA     M4A.3  2019年03月  [査読有り]

    DOI

  • On the Complexity Reduction of the Second-Order Volterra Nonlinear Equalizer for IM/DD Systems

    Nikolaos Panteleimon Diamantopoulos, Hidetaka Nishi, Wataru Kobayashi, Koji Takeda, Takaaki Kakitsuka, Shinji Matsuo

    Journal of Lightwave Technology   37   1214 - 1224  2019年02月  [査読有り]

    DOI

  • Integration of eight-channel directly modulated membrane-laser array and SiN AWG multiplexer on Si

    Hidetaka Nishi, Takuro Fuji, Nikolaos Panteleimon Diamantopoulos, Koji Takeda, Erina Kanno, Takaaki Kakitsuka, Tai Tsuchizawa, Hiroshi Fukuda, Shinji Matsuo

    Journal of Lightwave Technology   37   266 - 273  2019年01月  [査読有り]

    DOI

  • Amplifierless PAM-4/PAM-8 transmissions in O-band using a directly modulated laser for optical data-center interconnects

    Nikolaos Panteleimon Diamantopoulos, Wataru Kobayashi, Hidetaka Nishi, Koji Takeda, Takaaki Kakitsuka, Shinji Matsuo

    Optics Letters   44   9 - 12  2019年01月  [査読有り]

    DOI PubMed

  • Low-operating-energy directly modulated lasers for short-distance optical interconnects

    Shinji Matsuo, Takaaki Kakitsuka

    Advances in Optics and Photonics   10   567 - 643  2018年09月  [査読有り]  [招待有り]

    DOI

  • Energy-Efficient 100-Gbps PAM Transmissions Using a 1.3-μm Membrane DML-on-Silicon

    Nikolaos Panteleimon Diamantopoulos, Takuro Fujii, Hidetaka Nishi, Koji Takeda, Takaaki Kakitsuka, Shinji Matsuo

    2018 Photonics in Switching and Computing (PSC 2018), Limassol, Cyprus     Th4B4  2018年09月  [査読有り]

    DOI

  • Reduction of Cavity Length in λ-Scale Embedded Active-region Photonic Crystal (LEAP) Lasers

    Koji Takeda, Takuro Fujii, Eiichi Kuramochi, Akihiko Shinya, Masaya Notomi, Takaaki Kakitsuka, Shinji Matsuo

    IEEE 26th International Semiconductor Laser Conference (ISLC 2018), Santa Fe, USA     TuD1  2018年09月  [査読有り]

    DOI

  • Temperature Characteristics of 1.3-μm Membrane Lasers on InP-on-Insulator Substrate

    Takuro Fujii, Hidetaka Nishi, Koji Takeda, Erina Kanno, Koichi Hasebe, Tomonari Sato, Takaaki Kakitsuka, Hiroshi Fukuda, Tai Tsuchizawa, Shinji Matsuo

    IEEE 26th International Semiconductor Laser Conference (ISLC 2018), Santa Fe, USA     TuD8  2018年09月  [査読有り]

    DOI

  • Low-Operating Energy Heterogeneously Integrated Photonic-Crystal Laser on Si Waveguide

    Hidetaka Nishi, Koji Takeda, Takuro Fujii, Eiichi Kuramochi, Akihiko Shinya, Masaya Notomi, Tai Tsuchizawa, Takaaki Kakitsuka, Shinji Matsuo

    IEEE 26th International Semiconductor Laser Conference (ISLC 2018), Santa Fe, USA     TuB3  2018年09月  [査読有り]

    DOI

  • Si Waveguide Integrated Membrane Buried Heterostructure DFB Laser using SiN Multiple-Phase-Shift Surface Grating

    Takuma Aihara, Tatsurou Hiraki, Koji Takeda, Koichi Hasebe, Takuro Fujii, Tai Tsuchizawa, Takaaki Kakitsuka, Shinji Matsuo

    IEEE 26th International Semiconductor Laser Conference (ISLC 2018), Santa Fe, USA     TuB6  2018年09月  [査読有り]

    DOI

  • Energy-Efficient 400G SDM Transmitter Based on DMT and a 1.3-μ m Membrane DML-Array-on-Si

    Nikolaos Panteleimon Diamantopoulos, Kota Shikama, Hidetaka Nishi, Takuro Fujii, Toshiki Kishi, Koji Takeda, Yoshiteru Abe, Takashi Matsui, Takaaki Kakitsuka, Hiroshi Fukuda, Kazuhide Nakajima, Shinji Matsuo

    44th European Conference on Optical Communications (ECOC 2018), Roma, Italy     Tu3E.3  2018年09月  [査読有り]

    DOI

  • Heterogeneously Integrated Mach-Zehnder Modulator Using Membrane InGaAsP Phase Shifter and Hydrogen-Free SiN Waveguide on Si Platform

    Tatsurou Hiraki, Takuma Aihara, Takuro Fujii, Koji Takeda, Tai Tsuchizawa, Takaaki Kakitsuka, Hiroshi Fukuda, Shinji Matsuo

    44th European Conference on Optical Communications (ECOC 2018), Roma, Italy     Mo3C.1  2018年09月  [査読有り]

    DOI

  • 1-fJ/bit Direct Modulation of Photonic-Crystal Lasers

    Koji Takeda, Takuro Fujii, Akihiko Shinya, Masaya Notomi, Takaaki Kakitsuka, Shinji Matsuo

    44th European Conference on Optical Communications (ECOC 2018), Roma, Italy     Tu1A.5  2018年09月  [査読有り]

    DOI

  • Heteroepitaxial growth of GaAs/Ge buffer layer on Si for metamorphic InGaAs lasers

    Ryo Nakao, Masakazu Arai, Takaaki Kakitsuka, Shinji Matsuo

    IEICE Transactions on Electronics   E101C   537 - 544  2018年07月  [査読有り]  [招待有り]

    DOI

  • Single Mode Operation of Multiple Phase-Shift Grating Membrane Buried Heterostructure Lasers Integrated on Silicon Nanowire Waveguide

    T. Aihara, T. Hiraki, K. Takeda, K. Hasebe, T. Fujii, T. Tsuchizawa, T. Kakitsuka, S. Matsuo

    The Compound Semiconductor Week 2018 including the 45th International Symposium on Compound Semiconductors (ISCS 2018) and the 30th International Conference on Indium Phosphide and Related Materials (IPRM 2018), Cambridge, USA     We2A2.2  2018年05月  [査読有り]

  • 32-Gbit/s Heterogeneously Integrated Mach-Zehnder Modulator with 250μm-long III-V/Si MOS-capacitor Phase Shifter

    Tatsurou Hiraki, Takuma Aihara, Koichi Hasebe, Takuro Fujii, Koji Takeda, Takaaki Kakitsuka, Tai Tsuchizawa, Hiroshi Fukuda, Shinji Matsuo

    43rd European Conference and Exhibition on Optical Communication (ECOC 2017), Gothenburg, Sweden   2017-   1 - 3  2018年04月  [査読有り]

    DOI

  • 56-Gb/s VSB-PAM-4 over 80-km Using 1550-nm EA-DFB Laser and Reduced-Complexity Nonlinear Equalization

    Nikolaos-Panteleimon DIamantopoulos, Wataru Kobayashi, Hidetaka Nishi, Koji Takeda, Takaaki Kakitsuka, Shinji Matsuo

    European Conference on Optical Communication, ECOC   2017-   1 - 3  2018年04月  [査読有り]

     概要を見る

    Enabled by vestigial sideband modulation (VSB) and low-complexity nonlinear equalization, 28-GBaud PAM-4 is demonstrated using electro-absorption modulated laser and pin-photodiode at 80-km of standard single-mode fiber. The proposed scheme targets low-cost solutions for data-center interconnects and extended-reach 400GbE links.

    DOI

  • Membrane Buried Heterostrucutre Lasers Integrated on Silicon Nanowire Waveguide

    T. Aihara, T. Hiraki, K. Takeda, K. Hasebe, T. Fujii, T. Tsuchizawa, T. Kakitsuka, S. Matsuo

    International Conference on Nano-photonics and Nano-optoelectronics 2018 (ICNN 2018), Tokyo, Japan     ICNN6-2  2018年04月  [査読有り]

  • Twin-mirror membrane distributed-reflector lasers using 20-μm-long active region on Si substrates

    Erina Kanno, Koji Takeda, Takuro Fujii, Koichi Hasebe, Hidetaka Nishi, Tsuyoshi Yamamoto, Takaaki Kakitsuka, Shinji Matsuo

    Optics Express   26 ( 2 ) 1268 - 1277  2018年01月  [査読有り]

    DOI

  • Heterogeneously Integrated Membrane Lasers on Si Substrate for Low Operating Energy Optical Links

    Takuro Fujii, Koji Takeda, Nikolaos-Panteleimon Diamantopoulos, Erina Kanno, Koichi Hasebe, Hidetaka Nishi, Ryo Nakao, Takaaki Kakitsuka, Shinji Matsuo

    IEEE Journal of Selected Topics in Quantum Electronics   24 ( 1 )  2018年01月  [査読有り]  [招待有り]

     概要を見る

    High demand exists for low operating energy optical links that use wavelength division multiplexing technologies in datacenter networks. Thus, we fabricate a directly modulated membrane distributed-reflector laser with low operating energy on a thermally oxidized silicon (Si) substrate. Because we use epitaxial growth to bury an active region on a directly bonded InP-based membrane, it needs to be kept within a critical thickness, which is related to the growth temperature and the thermal expansion coefficients of materials. In previous studies, we used 250-nm-thick structures, causing relatively large series resistance that limited device performance on such aspects as energy cost and output power. In this study, we increase the III-V membrane thickness to 350 nm, which is close to the calculated critical thicknesses. We achieve the same high crystal quality of multiquantum-wells found in our previous studies. The fabricated laser shows a differential resistance of 72 Ω and thermal resistance of 982 K/W. Thanks to a reduction in bias voltage, the laser can be directly modulated at 25.8 Gbit/s with an energy cost of 97 fJ/bit. In addition, due to a reduction in heat generation, direct modulation with a 50-Gbit/s non return to zero signal is demonstrated by increasing bias current up to 10 mA.

    DOI

  • Monolithic integration of an 8-channel directly modulated membrane-laser array and a SiN AWG filter on Si

    Hidetaka Nishi, Takuro Fujii, Nikolaos-Panteleimon Diamantopoulos, Koji Takeda, Erina Kanno, Takaaki Kakitsuka, Tai Tsuchizawa, Hiroshi Fukuda, Shinji Matsuo

    2018 Optical Fiber Communications Conference and Exposition (OFC 2018), San Diego, USA   2018   Th3B.2  2018年  [査読有り]

    DOI

  • A 137-mW, 4 ch × 25-Gbps low-power compact transmitter flip-chip-bonded 1.3-μm LD-array-on-Si

    Toshiki Kishi, Munehiko Nagatani, Shigeru Kanazawa, Shinsuke Nakano, Hiroaki Katsurai, Takuro Fujii, Hidetaka Nishi, Takaaki Kakitsuka, Koichi Hasebe, Kota Shikama, Yuko Kawajiri, Atsushi Aratake, Hideyuki Nosaka, Hiroshi Fukuda, Shinji Matsuo

    2018 Optical Fiber Communications Conference and Exposition (OFC 2018), San Diego, USA   2018   M2D.2  2018年  [査読有り]

    DOI

  • Lateral current injection membrane buried heterostructure lasers integrated on 200-nm-thick Si waveguide

    Takuma Aihara, Tatsurou Hiraki, Koji Takeda, Koichi Hasebe, Takuro Fujii, Tai Tsuchizawa, Takaaki Kakitsuka, Shinji Matsuo

    2018 Optical Fiber Communications Conference and Exposition (OFC 2018), San Diego, USA   2018   W3F.4  2018年  [査読有り]

    DOI

  • Energy-efficient 120-Gbps DMT transmission using a 1.3-μm membrane laser on Si

    Nikolaos Panteleimon Diamantopoulos, Takuro Fujii, Hidetaka Nishi, Koji Takeda, Takaaki Kakitsuka, Shinji Matsuo

    2018 Optical Fiber Communications Conference and Exposition (OFC 2018), San Diego, USA   2018   M2D.5  2018年  [査読有り]

    DOI

  • Heterogeneously integrated III-V/Si MOS capacitor Mach-Zehnder modulator

    Tatsurou Hiraki, Takuma Aihara, Koichi Hasebe, Koji Takeda, Takuro Fujii, Takaaki Kakitsuka, Tai Tsuchizawa, Hiroshi Fukuda, Shinji Matsuo

    NATURE PHOTONICS   11 ( 8 ) 482 - +  2017年08月  [査読有り]

     概要を見る

    Demand for more transmission capacity in data centres is increasing due to the continuous growth of Internet traffic. The introduction of external modulators into datacom networks is essential with advanced modulation formats. However, the large footprint of silicon photonics Mach-Zehnder (MZ) modulators will limit further increases in transmission capacity(1-4). To overcome this, we introduce III-V compound semiconductors because the large electron-induced refractive-index change, high electron mobility and low carrier-plasma absorption are beneficial for overcoming the trade-offs among the voltage-length product (V pi L), operation speed and insertion loss of Si MZ modulators. Here, we demonstrate an MZ modulator with a 250-mu m-long InGaAsP/Si metal-oxide-semiconductor (MOS) capacitor phase-shifter and obtain a VpL of 0(pi)09 Vcm in accumulation mode, an insertion loss of similar to 1.0 dB, a cutoff frequency of similar to 2.2 GHz in depletion mode and a 32-Gbit s(-1) modulation with signal pre-emphasis. These results are promising for fabricating high-capacity large-scale photonic integrated circuits with low power consumption.

    DOI

  • Si nanowire waveguide coupled current-driven photonic-crystal lasers

    Koji Takeda, Takuro Fujii, Akihiko Shinya, Tai Tsuchizawa, Hidetaka Nishi, Eiichi Kuramochi, Masaya Notomi, Koichi Hasebe, Takaaki Kakitsuka, Shinji Matsuo

    2017 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO Europe 2017), Munich, Germany     CK-9.4  2017年06月  [査読有り]

    DOI

  • Silicon nanowire waveguide integrated membrane buried heterostructure lasers

    T. Aihara, T. Hiraki, K. Hasebe, T. Fujii, K. Takeda, H. Nishi, T. Tsuchizawa, T. Kakitsuka, S. Matsuo

    The 44th International Conference on Indium Phosphide and Related Materials (IPRM 2017), Berlin, Germany     C6.2.1  2017年05月  [査読有り]

  • Countinous-Wave Operation of Photonic Crystal Lasers Coupled to Waveguides

    2017 OPTICS & PHOTONICS International Congress (OPIC 2017), International Conference on Nano-photonics and Nano-optoelectronics, Yokohama, Japan     ICNN-2-3  2017年04月  [査読有り]

  • Heterogeneously integrated InP/Si metal-oxidesemiconductor capacitor mach-zehnder modulator

    Tatsurou Hiraki, Takuma Aihara, Koichi Hasebe, Takuro Fujii, Koji Takeda, Tai Tsuchizawa, Takaaki Kakitsuka, Hiroshi Fukuda, Shinji Matsuo

    2017 Optical Fiber Communications Conference and Exhibition (OFC 2017), Los Angeles, USA     W3E.1  2017年03月  [査読有り]

    DOI

  • Evaluation of Device Parameters for Membrane Lasers on Si Fabricated with Active-Layer Bonding Followed by Epitaxial Growth

    Takuro Fujii, Koji Takeda, Erina Kanno, Koichi Hasebe, Hidetaka Nishi, Tsuyoshi Yamamoto, Takaaki Kakitsuka, Shinji Matsuo

    IEICE TRANSACTIONS ON ELECTRONICS   E100C ( 2 ) 196 - 203  2017年02月  [査読有り]

     概要を見る

    We have developed membrane distributed Bragg reflector (DBR) lasers on thermally oxidized Si substrate (SiO2/Si substrate) to evaluate the parameters of the on-Si lasers we have been developing. The lasers have InGaAsP-based multi-quantum wells (MQWs) grown on InP substrate. We used direct bonding to transfer this active epitaxial layer to SiO2/Si substrate, followed by epitaxial growth of InP to fabricate a buried-heterostructure (BH) on Si. The lateral p-i-n structure was formed by thermal diffusion of Zn and ion implantation of Si. For the purpose of evaluating laser parameters such as internal quantum efficiency and internal loss, we fabricated long-cavity lasers that have 200-to 600-mu m-long active regions. The fabricated DBR lasers exhibit threshold currents of 1.7, 2.1, 2.8, and 3.7 mA for active-region lengths of 200, 300, 400, and 600 mu m, respectively. The differential quantum efficiency also depends on active-region length. In addition, the laser characteristics depend on the distance between active region and p-doped region. We evaluated the internal loss to be 10.2 cm(-1) and internal quantum efficiency to be 32.4% with appropriate doping profile.

    DOI

  • 40-km SSMF transmission of 56/64-Gb/s PAM-4 signals using 1.3-μm directly modulated laser and PIN photodiode

    Nikolaos Panteleimon Diamantopoulos, Wataru Kobayashi, Hidetaka Nishi, Koji Takeda, Takaaki Kakitsuka, Shinji Matsuo

    2017 Photonics in Switching (PS 2017), New Orleans, USA   2017   PW2D.4  2017年  [査読有り]

    DOI

  • Heterogeneously integrated lasers using epitaxially grown III-V active layer on directly bonded InP/SiO$_2$/Si substrate

    Takuro Fujii, Koji Takeda, Erina Kanno, Koichi Hasebe, Hidetaka Nishi, Tsuyoshi Yamamoto, Takaaki Kakitsuka, Shinji Matsuo

    2016 IEEE Photonics Conference (IPC 2016), Waikoloa Village, USA     WC1.5  2016年10月  [査読有り]

    DOI

  • Low operating-energy directly modulated membrane distributed-reflector lasers on Si

    Takuro Fujii, Koji Takeda, Erina Kanno, Koichi Hasebe, Hidetaka Nishi, Ryo Nakao, Tsuyoshi Yamamoto, Takaaki Kakitsuka, Shinji Matsuo

    42nd European Conference and Exhibition on Optical Communication (ECOC 2016), Dusseldorf, Germany     W4P1SC2-1  2016年09月  [査読有り]

  • 1.3-μm Directly Modulated Membrane Laser Array Employing Epitaxial Growth of InGaAlAs MQW on InP/SiO2/Si Substrate

    Takuro Fujii, Koji Takeda, Erina Kanno, Koichi Hasebe, Hidetaka Nishi, Ryo Nakao, Tsuyoshi Yamamoto, Takaaki Kakitsuka, Shinji Matsuo

    42nd European Conference and Exhibition on Optical Communication (ECOC 2016), Dusseldorf, Germany   Post Deadline Paper   Th.3.A.2  2016年09月  [査読有り]

  • Membrane distributed-reflector lasers with 20-μm-long DFB section and front/rear DBRs on Si substrates

    Erina Kanno, Koji Takeda, Takuro Fujii, Koichi Hasebe, Hidetaka Nishi, Tsuyoshi Yamamoto, Takaaki Kakitsuka, Shinji Matsuo

    The 25th International Semiconductor Laser Conference (ISLC 2016), Kobe, Japan     ThB7  2016年09月  [査読有り]

  • Membrane distributed-reflector laser integrated with SiOx-based spot-size converter on Si substrate

    Hidetaka Nishi, Takuro Fujii, Koji Takeda, Koichi Hasebe, Takaaki Kakitsuka, Tai Tsuchizawa, Tsuyoshi Yamamoto, Koji Yamada, Shinji Matsuo

    OPTICS EXPRESS   24 ( 16 ) 18346 - 18352  2016年08月  [査読有り]

     概要を見る

    We demonstrate monolithic integration of a 50-mu m-long-cavity membrane distributed-reflector laser with a spot-size converter, consisting of a tapered InP wire waveguide and an SiOx waveguide, on SiO2/Si substrate. The device exhibits 9.4-GHz/mA(0.5) modulation efficiency with a 2.2-dB fiber coupling loss. We demonstrate 25.8-Gbit/s direct modulation with a bias current of 2.5 mA, resulting in a low energy cost of 132 fJ/bit. (C) 2016 Optical Society of America

    DOI

  • Continuous-wave operation of ultra-short cavity distributed bragg reflector lasers on Si substrates

    Koji Takeda, Erina Kanno, Takuro Fujii, Koichi Hasebe, Tsuyoshi Yamamoto, Takaaki Kakitsuka, Shinji Matsuo

    2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016, Toyama, Japan     ThD1-2  2016年06月  [査読有り]

    DOI

  • Growth of InGaAsP-based MQW layer on InP template bonded to Si substrate for fabricating membrane lasers

    Takuro Fujii, Koji Takeda, Erina Kanno, Hidetaka Nishi, Koichi Hasebe, Tsuyoshi Yamamoto, Takaaki Kakitsuka, Shinji Matsuo

    2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016, Toyama, Japan     TuD3-2  2016年06月  [査読有り]

    DOI

  • Design and fabrication of directly-modulated 1.3-μm lateral-current-injection lasers

    Koichi Hasebe, Junichi Nishinaka, Takuro Fujii, Koji Takeda, Tsuyoshi Yamamoto, Takaaki Kakitsuka, Shinji Matsuo

    2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016, Toyama, Japan     ThD1-5  2016年06月  [査読有り]

    DOI

  • Photonic Crystal Lasers for Chip-to-Chip and On-Chip Optical Interconnects

    Tomonari Sato, Koji Takeda, Akihiko Shinya, Masaya Notomi, Koichi Hasebe, Takaaki Kakitsuka, Shinji Matsuo

    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS   21 ( 6 )  2015年11月  [査読有り]  [招待有り]

     概要を見る

    A directly modulated photonic crystal (PhC) laser with a wavelength-scale cavity is a key component for chip-to-chip and on-chip optical interconnections because it enables us to achieve ultralow operating energy. A buried heterostructure, where the wavelength-scale active region is buried with an InP layer, is essential for achieving ultralow operating energy because it improves both carrier and photon confinement in the active region and the InP layer improves the thermal conductivity of the device. We call this a lambda-scale embedded active-region PhC, or LEAP, laser. We have already developed an electrically driven LEAP laser with a threshold current of 4.8 mu A and operating energy of 4.4 fJ/bit. However, to employ the LEAP laser in chip-to-chip optical interconnects, the output power should be increased. To increase it, we increase the number of multiple quantum wells and reduce the device series resistance. The device exhibits 39.3-mu W output power with threshold current of 36 mu A. As a result, we measure the bit error rate with 10-Gb/s signal without using an optical amplifier. For an on-chip optical interconnect, the monolithic integration of a laser, waveguide, and photodetector is the main issue because on-chip optical interconnect requires extremely small energy consumption to overcome its electrical counterpart; therefore, unwanted optical loss such as coupling loss should be minimized. We have fabricated amonolithic optical link, in which a LEAP laser exhibits a threshold current of 22 mu A. The integrated optical link operates at an ultralow energy of 28.5 fJ/bit. These results indicate that the LEAP laser is highly suitable for use as a transmitter in computercom applications.

    DOI

  • Membrane distributed-reflector laser integrated with SiO$_x$-based spot-size converter on Si platform

    Hidetaka Nishi, Takuro Fujii, Koji Takeda, Koichi Hasebe, Takaaki Kakitsuka, Tai Tsuchizawa, Tsuyoshi Yamamoto, Koji Yamada, Shinji Matsuo

    European Conference on Optical Communications (ECOC 2015),Valencia, Spain     We.2.5.3  2015年09月  [査読有り]

    DOI

  • Epitaxial growth of InP to bury directly bonded thin active layer on SiO2/Si substrate for fabricating distributed feedback lasers on silicon

    Takuro Fujii, Tomonari Sato, Koji Takeda, Koichi Hasebe, Takaaki Kakitsuka, Shinji Matsuo

    IET OPTOELECTRONICS   9 ( 4 ) 151 - 157  2015年08月  [査読有り]  [招待有り]

     概要を見る

    The authors have developed a new heterogeneous-integration method for fabricating semiconductor lasers with high modulation efficiency on Si substrates. The method employs the direct bonding of an InP-based active layer to the SiO2 layer of a thermally oxidised Si substrate (SiO2/Si substrate), followed by the epitaxial growth of InP to form a buried heterostructure (BH). By using the InP membrane, the authors realise epitaxial growth of an InP on the InP membrane directly bonded to Si without crystal quality degradation. Both a theoretical estimation and photoluminescence measurements revealed that the total laser thickness must be less than the critical thickness determined by the applied thermal strain. The authors confirmed that the crystal quality of the BH is comparable to that fabricated on an InP substrate when using a 250-nm-thick InP-based membrane. A distributed feedback laser fabricated on a SiO2/Si substrate exhibited continuous-wave operation up to 100 degrees C and was directly modulated by a 40 Gbit/s non-return-to-zero signal with a bias current of 15 mA. These results indicate that epitaxial growth using a directly bonded InP-based active layer on a SiO2/Si substrate allows us to achieve lasers with high modulation efficiency and to use a large-scale Si wafer as a fabrication platform, resulting in low-cost fabrication.

    DOI

  • Directly Modulated DFB Laser on SiO2/Si Substrate for Datacenter Networks

    Shinji Matsuo, Takuro Fujii, Koichi Hasebe, Koji Takeda, Tomonari Sato, Takaaki Kakitsuka

    JOURNAL OF LIGHTWAVE TECHNOLOGY   33 ( 6 ) 1217 - 1222  2015年03月  [査読有り]  [招待有り]

     概要を見る

    Reducing the operating energy of a distributed feedback (DFB) laser is a critical issue if we are to use the device as a directly modulated light source employing wavelength division multiplexing technologies in short-distance datacom networks. A membrane buried heterostructure (BH) DFB laser on a SiO2 layer is one candidate for reducing the operating energy because it provides a strong carrier and optical confinement in the active region. For low-cost fabrication, we have proposed and developed a fabrication procedure that employs the buried growth of an InP layer by using a directly bonded InP-based active layer on a SiO2/Si substrate, which enables us to use a large-scale Si wafer. To overcome the problem of the difference between the thermal expansion coefficients of Si, SiO2, and InP, we have used a thin active layer (similar to 250 nm) on a SiO2/Si substrate as a template for the epitaxial growth of a III-V compound semiconductor. A lateral current injection structure is essential for fabricating a device with a 250-nm-thick template. Our fabricated DFB laser with a 73-mu m cavity length exhibits a threshold current of 0.9 mA for continuous operation at room temperature and achieves lasing at up to 100 degrees C. We have also demonstrated 171-fJ/bit operation with a 25.8-Gb/s NRZ signal. These results indicate that the BH DFB laser on a SiO2/Si substrate is highly suitable for use as a transmitter for datacom applications.

    DOI

  • High-Speed Modulation of Lateral p-i-n Diode Structure Electro-Absorption Modulator Integrated With DFB Laser

    Koichi Hasebe, Tomonari Sato, Koji Takeda, Takuro Fujii, Takaaki Kakitsuka, Shinji Matsuo

    JOURNAL OF LIGHTWAVE TECHNOLOGY   33 ( 6 ) 1235 - 1240  2015年03月  [査読有り]  [招待有り]

     概要を見る

    Large-scale photonic integrated circuits (PICs) are essential for reducing the cost and power consumption of optical networks. Selective doping by means of thermal diffusion and ion implantation is suitable for fabricating PICs because it enables doping into desired regions without crystal growth. In this paper, we report the fabrication of a lateral-p-i-n-diode-structure electro-absorption modulator (EAM) integrated with a DFB (EADFB) laser. Owing to the lateral p-i-n structure, we are able to use the broadening of the exciton absorption peak that occurs when the electric field is applied parallel to the quantum well. By comparing the calculated absorption spectrum change for parallel and vertical electric fields, we found that it occurs with a low electrical field, although the amount of absorption coefficient change is small for the parallel one. Thus, in our design, we make the EAM length larger than that of the conventional vertical electric field EAM. However, because of the low parasitic capacitance of the lateral EAM, we can expect to achieve high-speed operation. With a fabricated device with a 200-mu m-long EAM, we have achieved 50-Gb/s operation with clear eye opening. We have also achieved a side-mode suppression ratio of more than 50 dB by using a surface grating. These results indicate that our lateral EADFB laser is very promising as an integrated light source for large-scale PICs and that our fabrication process based on selective doping is suitable for them.

    DOI

  • Heterogeneously integrated photonic-crystal lasers on silicon for on/off chip optical interconnects

    Koji Takeda, Tomonari Sato, Takuro Fujii, Eiichi Kuramochi, Masaya Notomi, Koichi Hasebe, Takaaki Kakitsuka, Shinji Matsuo

    OPTICS EXPRESS   23 ( 2 ) 702 - 708  2015年01月  [査読有り]

     概要を見る

    We demonstrate the continuous-wave operation of lambda-scale embedded active-region photonic-crystal (LEAP) lasers at room temperature, which we fabricated on a Si wafer. The on-Si LEAP lasers exhibit a threshold current of 31 mu A, which is the lowest reported value for any type of semiconductor laser on Si. This reveals the great potential of LEAP lasers as light sources for on- or off-chip optical interconnects with ultra-low power consumption in future information communication technology devices including CMOS processors. (C) 2015 Optical Society of America

    DOI

  • Push-pull driven electro-absorption modulator integrated with DFB laser using selectively doped lateral pin diode structure

    Koichi Hasebe, Tomonari Sato, Koji Takeda, Shigeru Kanazawa, Takuro Fujii, Takaaki Kakitsuka, Shinji Matsuo

    2014 IEEE International Semiconductor Laser Conference (ISLC 2014), Palma de Mallorca, Spain     MD4  2014年09月  [査読有り]

    DOI

  • 50-Gbit/s operation of lateral pin diode structure electro-absorption modulator integrated DFB laser

    Koichi Hasebe, Tomonari Sato, Koji Takeda, Takuro Fujii, Takaaki Kakitsuka, Shinji Matsuo

    2014 European Conference on Optical Communication (ECOC 2014), Cannes, France     Mo.4.4.2  2014年09月  [査読有り]

    DOI

  • 25-Gbit/s direct modulation of photonic-crystal lasers with a 10.5-fJ/bit energy cost for on/off-chip optical interconnects

    Koji Takeda, Tomonari Sato, Takuro Fujii, Akihiko Shinya, Eiichi Kuramochi, Masaya Notomi, Koichi Hasebe, Takaaki Kakitsuka, Shinji Matsuo

    2014 European Conference on Optical Communication (ECOC 2014), Cannes, France     Tu.1.7.2  2014年09月  [査読有り]

    DOI

  • Ultralow operating energy of directly modulated DFB laser on SiO$_2$/Si substrate

    Shinji Matsuo, Takuro Fujii, Koichi Hasebe, Koji Takeda, Tomonari Sato, Takaaki Kakitsuka

    2014 European Conference on Optical Communication (ECOC 2014), Cannes, France     Mo.4.4.3  2014年09月  [査読有り]

    DOI

  • 40-Gbit/s direct modulation of membrane buried heterostructure DFB laser on SiO2/Si substrate

    Shinji Matsuo, Takuro Fujii, Koichi Hasebe, Koji Takeda, Tomonari Sato, Takaaki Kakitsuka

    2014 IEEE International Semiconductor Laser Conference (ISLC 2014), Palma de Mallorca, Spain     MB1  2014年09月  [査読有り]

    DOI

  • Error-free 25-Gbit/s direct modulation of lateral-currentinjection DFB laser

    Koichi Hasebe, Tomonari Sato, Koji Takeda, Takuro Fujii, Takaaki Kakitsuka, Shinji Matsuo

    2014 Conference on Lasers and Electro-Optics (CLEO 2014), San Jose, USA     STh1G  2014年06月  [査読有り]

    DOI

  • Electrically driven photonic-crystal lasers on silicon substrates using direct wafer bonding

    Koji Takeda, Tomonari Sato, Takuro Fujii, Eiichi Kuramochi, Masaya Notomi, Koichi Hasebe, Takaaki Kakitsuka, Shinji Matsuo

    2014 Conference on Lasers and Electro-Optics (CLEO 2014), San Jose, USA     SW3G  2014年06月  [査読有り]

    DOI

  • Directly modulated buried heterostructure DFB laser on SiO2/Si substrate fabricated by regrowth of InP using bonded active layer

    Shinji Matsuo, Takuro Fujii, Koichi Hasebe, Koji Takeda, Tomonari Sato, Takaaki Kakitsuka

    OPTICS EXPRESS   22 ( 10 ) 12139 - 12147  2014年05月  [査読有り]

     概要を見る

    We describe the growth of InP layer using an ultrathin III-V active layer that is directly bonded to SiO2/Si substrate to fabricate a buried heterostructure (BH) laser. Using a 250-nm-thick bonded active layer, we succeeded in fabricating a BH distributed feedback (DFB) laser on SiO2/Si substrate. The use of a lateral current injection structure is important for forming a p-i-n junction using bonded thin film. The fabricated DFB laser is directly modulated by a 25.8-Gbit/s NRZ signal at 50 degrees C. These results indicate that our fabrication method is a promising way to fabricate highefficiency lasers at a low cost. (C)2014 Optical Society of America

    DOI

  • InGaAsP/InP buried heterostruture on SiO$_2$/Si substrate using epitaxial growth after direct bonding of thin active layer

    Takuro Fujii, Tomonari Sato, Koji Takeda, Koichi Hasebe, Takaaki Kakitsuka, Shinji Matsuo

    2014 International Conference on Indium Phosphide and Related Materials (IPRM 2014), Montpellier, France     Mo-A2-4  2014年05月  [査読有り]

    DOI

  • Photonic crystal lasers using wavelength-scale embedded active region

    Shinji Matsuo, Tomonari Sato, Koji Takeda, Akihiko Shinya, Kengo Nozaki, Eiichi Kuramochi, Hideaki Taniyama, Masaya Notomi, Takuro Fujii, Koichi Hasebe, Takaaki Kakitsuka

    JOURNAL OF PHYSICS D-APPLIED PHYSICS   47 ( 2 ) ,023001  2014年01月  [査読有り]  [招待有り]

     概要を見る

    Lasers with ultra-low operating energy are desired for use in chip-to-chip and on-chip optical interconnects. If we are to reduce the operating energy, we must reduce the active volume. Therefore, a photonic crystal (PhC) laser with a wavelength-scale cavity has attracted a lot of attention because a PhC provides a large Q-factor with a small volume. To improve this device's performance, we employ an embedded active region structure in which the wavelength-scale active region is buried with an InP PhC slab. This structure enables us to achieve effective confinement of both carriers and photons, and to improve the thermal resistance of the device. Thus, we have obtained a large external differential quantum efficiency of 55% and an output power of -10 dBm by optical pumping. For electrical pumping, we use a lateral p-i-n structure that employs Zn diffusion and Si ion implantation for p-type and n-type doping, respectively. We have achieved room-temperature continuous-wave operation with a threshold current of 7.8 mu A and a maximum 3 dB bandwidth of 16.2 GHz. The results of an experimental bit error rate measurement with a 10 Gbit s(-1) NRZ signal reveal the minimum operating energy for transferring a single bit of 5.5 fJ. These results show the potential of this laser to be used for very short reach interconnects. We also describe the optimal design of cavity quality (Q) factor in terms of achieving a large output power with a low operating energy using a calculation based on rate equations. When we assume an internal absorption loss of 20 cm(-1), the optimized coupling Q-factor is 2000.

    DOI

  • Single-mode lasing of Lambda-scale Embedded Active-region Photonic-crystal (LEAP) laser with in-line coupled waveguide

    A. Shinya, T. Sato, K. Takeda, K. Nozaki, E. Kuramochi, T. Kakitsuka, H. Taniyama, T. Fujii, S. Matsuo, M. Notomi

    2013 IEEE Photonics Conference (IPC 2013), Bellevue, USA     WD3.4  2013年09月  [査読有り]

    DOI

  • Ultralow Operating Energy Electrically Driven Photonic Crystal Lasers

    Shinji Matsuo, Tomonari Sato, Koji Takeda, Akihiko Shinya, Kengo Nozaki, Hideaki Taniyama, Masaya Notomi, Koichi Hasebe, Takaaki Kakitsuka

    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS   19 ( 4 ) 4900311  2013年07月  [査読有り]  [招待有り]

     概要を見る

    The introduction of the photonic crystal (PhC) wavelength-scale cavity as a laser cavity enables us to obtain both ultralow threshold current and operating energy. These parameters are essential when using the transmitters in chip-to-chip and on-chip interconnections. To improve the device performance, we employ an ultracompact embedded active region that we call a lambda-scale embedded active-region PhC laser or LEAP laser. We have developed an electrically driven LEAP laser, which operates under room-temperature continuous-wave conditions. To fabricate the electrically driven LEAP laser, we used Zn thermal diffusion and Si ion implantation, respectively, for p-type and n-type doping in an undoped InP layer. However, with previous fabricated devices there was a large leakage current through the substrate and the threshold current was 0.39 mA, which is larger than the expected threshold obtained by optical pumping. To reduce the leakage current, we propose using an InAlAs sacrificial laser instead of an InGaAs layer. The leakage current path through the substrate is effectively suppressed, and as a result, the threshold current is reduced to 7.8 mu A, which is the lowest threshold current reported for any laser. Furthermore, the LEAP laser operates at up to 95 degrees C by using an InGaAlAs-based multiple quantum well structure. We also describe the dynamic characteristics of the laser. The LEAP laser exhibits a maximum 3-dB bandwidth of 16.2 GHz and the modulation current efficiency factor is 53.8 GHz/mA(0.5) or 1.7 GHz/mu A(0.5), which is four times that of a vertical cavity surface-emitting laser. The device is directly modulated by a 12.5-Gb/s nonreturn-to-zero signal with a bias voltage of 1.6 V and a bias current of 109 mu A, resulting in an energy cost of 14.0 fJ/b. This is the smallest operating energy for any laser. These results indicate that the LEAP laser is highly suitable for use as a transmitter in computercom applications.

    DOI

  • Few-fJ/bit data transmissions using directly modulated lambda-scale embedded active region photonic-crystal lasers

    Koji Takeda, Tomonari Sato, Akihiko Shinya, Kengo Nozaki, Wataru Kobayashi, Hideaki Taniyama, Masaya Notomi, Koichi Hasebe, Takaaki Kakitsuka, Shinji Matsuo

    NATURE PHOTONICS   7 ( 7 ) 569 - 575  2013年07月  [査読有り]

     概要を見る

    A low operating energy is needed for nanocavity lasers designed for on-chip photonic network applications. On-chip nanocavity lasers must be driven by current because they act as light sources driven by electronic circuits. Here, we report the high-speed direct modulation of a lambda-scale embedded active region photonic-crystal (LEAP) laser that holds three records for any type of laser operated at room temperature: a low threshold current of 4.8 mu A, a modulation current efficiency of 2.0 GHz mu A(-0.5) and an operating energy of 4.4 fJ bit(-1). Five major technologies make this performance possible: a compact buried heterostructure, a photonic-crystal nanocavity, a lateral p-n junction realized by ion implantation and thermal diffusion, an InAlAs sacrificial layer and current-blocking trenches. We believe that an output power of 2.17 mu W and an operating energy of 4.4 fJ bit(-1) will enable us to realize on-chip photonic networks in combination with the recently developed highly sensitive receivers.

    DOI

  • 17-Gb/s direct modulation of lambda-scale embedded active region photonic crystal lasers

    Koji Takeda, Tomonari Sato, Akihiko Shinya, Kengo Nozaki, Hideaki Taniyama, Koichi Hasebe, Takaaki Kakitsuka, Masaya Notomi, Shinji Matsuo

    2013 International Conference on Indium Phosphide and Related Materials (IPRM 2013), Kobe, Japan     WeD2-2  2013年05月  [査読有り]

    DOI

  • 5.5-fJ/bit direct modulation of lambda-scale embedded active region photonic-crystal lasers

    Koji Takeda, Tomonari Sato, Akihiko Shinya, Kengo Nozaki, Hideaki Taniyama, Koichi Hasebe, Takaaki Kakitsuka, Masaya Notomi, Shinji Matsuo

    2013 Optical Interconnects Conference (OI 2013), Santa Fe, USA     WB1  2013年05月  [査読有り]  [招待有り]

    DOI

  • Integrated on-chip optical links using photonic-crystal lasers and photodetectors with current blocking trenches

    Koji Takeda, Tomonari Sato, Akihiko Shinya, Kengo Nozaki, Hideaki Taniyama, Masaya Notomi, Koichi Hasebe, Takaaki Kakitsuka, Shinji Matsuo

    2013 Optical Fiber Communication Conference and Exposition and the National Fiber Optic Engineers Conference (OFC/NFOEC 2013), Anaheim, USA     OM2J  2013年03月  [査読有り]

    DOI

  • Lambda-scale embedded active-region photonic crystal lasers for off-chip interconnect

    S. Matsuo, K. Takeda, T. Sato, T. Fujii, A. Shinya, E. Kuramochi, M. Notomi, K. Hasebe, T. Kakitsuka

    IET Conference Publications   2013 ( 622 ) 276 - 278  2013年  [査読有り]

     概要を見る

    We successfully increase the output power of an electrically driven photonic crystal laser. By using a six-quantum-well structure and decreasing the series resistance, the device, having 32-μA threshold current, exhibits 39.3-μW output power. We also demonstrate bit-error rate measurements with 10-Gbit/s signal without using optical amplifier.

    DOI

  • Role of buried heterostructure in photonic-crystal laser for high-temperature and high-output-power operation

    T. Kakitsuka, T. Sato, K. Takeda, K. Hasebe, K. Nozaki, M. Notomi, S. Matsuo

    2012 International Symposium on Photonics and Electronics Convergence (ISPEC), Tokyo, Japan     P-42  2012年12月  [査読有り]

  • Ultra-low threshold current CW operation of photonic crystal nanocavity laser with InAlAs sacrificial layer

    Tomonari Sato, Koji Takeda, Akihiko Shinya, Kengo Nozaki, Hideaki Taniyama, Koichi Hasebe, Takaaki Kakitsuka, Masaya Notomi, Shinji Matsuo

    2012 IEEE International Semiconductor Laser Conference (ISLC 2012), San Diego, USA     WC4  2012年10月  [査読有り]

    DOI

  • 95°C CW operation of InGaAlAs multiple-quantum-well photonic-crystal nanocavity laser with ultra-low threshold current

    T. Sato, K. Takeda, A. Shinya, K. Nozaki, H. Taniyama, W. Kobayashi, K. Hasebe, T. Kakitsuka, M. Notomi, S. Matsuo

    2012 IEEE Photonics Conference (IPC 2012), Burlingame, USA     WF2  2012年09月  [査読有り]

    DOI

  • 10-Gbit/s direct modulation of optically pumped InGaAlAs multiple-quantum-well photonic-crystal nanocavity laser up to 100°C

    Tomonari Sato, Koji Takeda, Hiromitsu Imai, Akihiko Shinya, Kengo Nozaki, Hideaki Taniyama, Koichi Hasebe, Wataru Kobayashi, Takaaki Kakitsuka, Masaya Notomi, Shinji Matsuo

    2012 International Conference on Indium Phosphide and Related Materials (IPRM 2012), Santa Barbara, USA     Tu-3D.3  2012年08月  [査読有り]

    DOI

  • High-Temperature Operation of Photonic-Crystal Lasers for On-Chip Optical Interconnection

    Koji Takeda, Tomonari Sato, Takaaki Kakitsuka, Akihiko Shinya, Kengo Nozaki, Chin-Hui Chen, Hideaki Taniyama, Masaya Notomi, Shinji Matsuo

    IEICE TRANSACTIONS ON ELECTRONICS   E95C ( 7 ) 1244 - 1251  2012年07月  [査読有り]

     概要を見る

    To meet the demand for light sources for on-chip optical interconnections, we demonstrate the continuous-wave (CW) operation of photonic-crystal (PhC) nanocavity lasers at up to 89.8 degrees C by using InP buried heterostructures (BH). The wavelength of a PhC laser can be precisely designed over a wide range exceeding 100 nm by controlling the lattice constant of the PhC. The dynamic responses of the PhC laser are also demonstrated with a 3-dB bandwidth of over 7.0 GHz at 66.2 degrees C. These results reveal the laser's availability for application to wavelength division multiplexed (WDM) optical interconnection on CMOS chips. We discuss the total bandwidths of future on-chip optical interconnections, and report the capabilities of PhC lasers.

    DOI

  • Continuous-wave operation of electrically driven wavelength-scale embedded active-region photonic-crystal lasers at room temperature

    Koji Takeda, Tomonari Sato, Akihiko Shinya, Kengo Nozaki, Hideaki Taniyama, Masaya Notomi, Koichi Hasebe, Takaaki Kakitsuka, Shinji Matsuo

    2012 Conference on Lasers and Electro-Optics (CLEO 2012), San Jose, USA     CTu1N  2012年05月  [査読有り]

    DOI

  • Room-temperature continuous-wave operation of lateral current injection wavelength-scale embedded active-region photonic-crystal laser

    Shinji Matsuo, Koji Takeda, Tomonari Sato, Masaya Notomi, Akihiko Shinya, Kengo Nozaki, Hideaki Taniyama, Koichi Hasebe, Takaaki Kakitsuka

    OPTICS EXPRESS   20 ( 4 ) 3773 - 3780  2012年02月  [査読有り]

     概要を見る

    We have developed a wavelength-scale embedded active-region photonic-crystal laser using lateral p-i-n structure. Zn diffusion and Si ion implantation are used for p- and n-type doping. Room-temperature continuous-wave lasing behavior is clearly observed from the injection current dependence of the output power, 3dB-bandwidth of the peak, and lasing wavelength. The threshold current is 390 mu A and the estimated effective threshold current is 9.4 mu A. The output power in output waveguide is 1.82 mu W for a 2.0-mA current injection. These results indicate that the embedded active-region structure effectively reduce the thermal resistance. Ultrasmall electrically driven lasers are an important step towards on-chip photonic network applications. (C) 2012 Optical Society of America

    DOI

  • 28.5-fJ/bit on-chip optical interconnect using monolithically integrated photonic crystal laser and photodetector

    S. Matsuo, T. Sato, K. Takeda, A. Shinya, K. Nozaki, M. Notomi, K. Hasebe, T. Kakitsuka

    European Conference and Exhibition on Optical Communication, ECEOC 2012     Th.3.B.2  2012年  [査読有り]

     概要を見る

    We demonstrate the monolithic integration of a photonic crystal (PhC) laser and a photodetector with which to construct on-chip interconnect. By combining an ultracompact embedded active region and a PhC cavity, the laser exhibits an ultra-low threshold current of 22 μA and an integrated optical link operates at an ultra-low energy of 28.5 fJ/bit. © 2012 OSA.

    DOI

  • Monolithically Integrated Wavelength-Routing Switch Using Tunable Wavelength Converters with Double-Ring-Resonator Tunable Lasers

    Toru Segawa, Shinji Matsuo, Takaaki Kakitsuka, Yasuo Shibata, Tomonari Sato, Yoshihiro Kawaguchi, Yasuhiro Kondo, Ryo Takahashi

    IEICE TRANSACTIONS ON ELECTRONICS   E94C ( 9 ) 1439 - 1446  2011年09月  [査読有り]

     概要を見る

    We present an 8 x 8 wavelength-routing switch (WRS) that monolithically integrates tunable wavelength converters (TWCs) and an 8 x 8 arrayed-waveguide grating. The TWC consists of a double-ring-resonator tunable laser (DRR TL) allowing rapid and stable switching and a semiconductor-optical-amplifier-based optical gate. Two different types of dry-etched mirrors form the laser cavity of the DRR TL, which enable integration of the optical components of the WRS on a single chip. The monolithic WRS performed 1 x 8 high-speed wavelength routing of a nonreturn-to-zero signal at 10 Gbit/s. The switching operation was demonstrated by simultaneously using two adjacent TWCs.

    DOI

  • Injection-Locked Flip-Flop Operation of a DBR Laser

    Takaaki Kakitsuka, Shinji Matsuo, Kiichi Hamamoto, Toru Segawa, Hiroyuki Suzuki, Ryo Takahashi

    IEEE PHOTONICS TECHNOLOGY LETTERS   23 ( 17 ) 1261 - 1263  2011年09月  [査読有り]

     概要を見る

    The flip-flop operation of a distributed Bragg reflector (DBR) laser using sidemode injection locking is demonstrated. The mode suppression induced by spectral hole burning between two longitudinal modes allows stable bistable operation. A switching time of 0.8 ns and a switching power of 30 mu W in flip-flop cycle of 10 ns are successfully demonstrated.

    DOI

  • Directly frequency modulated DFB laser integrated with EA modulator for extended transmission reach

    K. Hasebe, S. Matsuo, H. Sanjoh, A. Ohki, T. Kakitsuka, Y. Shibata

    2010 European Conference on Optical Communication (ECOC 2010), Torino, Italy     Th.9.D.5  2010年09月  [査読有り]

    DOI

  • High-speed ultracompact buried heterostructure photonic-crystal laser with 13 fJ of energy consumed per bit transmitted

    Shinji Matsuo, Akihiko Shinya, Takaaki Kakitsuka, Kengo Nozaki, Toru Segawa, Tomonari Sato, Yoshihiro Kawaguchi, Masaya Notomi

    NATURE PHOTONICS   4 ( 9 ) 648 - 654  2010年09月  [査読有り]

     概要を見る

    The ability to directly modulate a nanocavity laser with ultralow power consumption is essential for the realization of a CMOS-integrated, on-chip photonic network, as several thousand lasers must be integrated onto a single chip. Here, we show high-speed direct modulation (3-dB modulation bandwidth of 5.5 GHz) of an ultracompact InP/InGaAsP buried heterostructure photonic-crystal laser at room temperature by optical pumping. The required energy for transmitting one bit is estimated to be 13 fJ. We also achieve a threshold input power of 1.5 mu W, which is the lowest observed value for room-temperature continuous-wave operation of any type of laser. The maximum single-mode fibre output power of 0.44 mu W is the highest output power, to our knowledge, for photonic-crystal nanocavity lasers under room-temperature continuous-wave operation. Implementing a buried heterostructure leads to excellent device performance, reducing the active region temperature and effectively confining the carriers inside the cavity.

    DOI

  • Insertion loss-free 1×4 InGaAsP/InP multimode interference waveguide switch integrated with optical amplifier

    Tetsuro Kubo, Shinji Tomofuji, Shinji Matsuo, Takaaki Kakitsuka, Ken-ichi Kitayama

    Photonics in Switching (PS 2010), Monterey, USA     PWD4  2010年07月  [査読有り]

    DOI

  • A monolithic wavelength-routing switch using double-ring-resonator-coupled tunable lasers with highly reflective mirrors

    T. Segawa, S. Matsuo, T. Kakitsuka, Y. Shibata, T. Sato, R. Takahashi

    2010 International Conference on Indium Phosphide and Related Materials (IPRM 2010), Takamatsu, Japan     WeA3-2  2010年05月  [査読有り]

    DOI

  • All-optical wavelength-routing switch with monolithically integrated filter-free tunable wavelength converters and an AWG

    Toru Segawa, Shinji Matsuo, Takaaki Kakitsuka, Yasuo Shibata, Tomonari Sato, Yoshihiro Kawaguchi, Yasuhiro Kondo, Ryo Takahashi

    OPTICS EXPRESS   18 ( 5 ) 4340 - 4345  2010年03月  [査読有り]

     概要を見る

    We present a compact 4x8 wavelength-routing switch that monolithically integrates fast tunable wavelength converters (TWCs) and an arrayed-waveguide grating (AWG) for optical packet switching. The TWC consists of a double-ring-resonator-coupled tunable laser which allows rapid and stable switching, and an optical gate based on a parallel amplifier structure which prevents an input optical signal from being routed through the AWG (filter-free operation). A deep-ridge waveguide technology, employed for the AWG and ring resonators, facilitates the fabrication of the switch and makes the device compact. The filter-free TWCs achieve low crosstalk of the input optical signal of less than -22 dB. The wavelength routing operation of a non-return-to-zero (NRZ) signal at 10 Gbit/s is achieved with a switching time of less than 5 ns. (C) 2010 Optical Society of America

    DOI

  • Dynamic switching characteristics of InGaAsP/InP multimode interference optical waveguide switch

    Shinji Tomofuji, Shinji Matsuo, Takaaki Kakitsuka, Ken-ichi Kitayama

    OPTICS EXPRESS   17 ( 26 ) 23380 - 23388  2009年12月  [査読有り]

     概要を見る

    Multimode interference (MMI) waveguide switches show promise for switch in optical packet switching (OPS). In this work, we fabricated 1 x 4 InGaAsP/InP MMI waveguide switch device which consists of a 1 x 4 MMI splitter, 4 equally spaced single-mode waveguides with phase shifters, and a 4 x 4 MMI combiner. Good crosstalk and extinction ratio of -14.47 dB and 23.39 dB, respectively, are obtained. In addition, we experimentally demonstrate dynamic switching, and the rise and fall time of 1.4 ns and 1.2 ns, respectively, are obtained. (C) 2009 Optical Society of America

    DOI PubMed

  • Successful Application of the 8-band k.p Theory to Optical Properties of Highly Strained In(Ga)As/InGaAs Quantum Wells With Strong Conduction-Valence Band Coupling

    Takeshi Fujisawa, Tomonari Sato, Manabu Mitsuhara, Takaaki Kakitsuka, Takayuki Yamanaka, Yasuhiro Kondo, Fumiyoshi Kano

    IEEE JOURNAL OF QUANTUM ELECTRONICS   45 ( 9 ) 1183 - 1191  2009年09月  [査読有り]

     概要を見る

    Band-edge optical properties of highly strained In(Ga)As/InGaAs quantum wells on InP with the bandgap wavelength longer than m are analyzed by using 6- and 8-band theory. It is demonstrated that the 8-band model is indispensable for the analysis of highly strained In(Ga)As/InGaAs quantum wells due to the strong coupling between conduction and valence bands induced by large strain in the well. Furthermore, an energy correction originating from the interaction between the spin-orbit coupling and the strain, which has been discarded in conventional theory, is taken into account, and the role of the effect for highly strained quantum wells is discussed. The photoluminescence peak wavelength and absorption spectra of In(Ga)As/InGaAs quantum wells calculated by 8-band model are in excellent agreement with those obtained by experiment, showing the validity of the results presented here.

    DOI

  • Dynamic operation of a monolithic wavelength-routing switch using double-ring-resonator-coupled tunable laser diodes

    T. Segawa, S. Matsuo, T. Kakitsuka, Y. Shibata, T. Sato, Y. Kawaguchi, Y. Kondo, R. Takahashi

    2009 International Conference on Photonics in Switching (PS 2009), Pisa, Italy     WeI3-1  2009年09月  [査読有り]

    DOI

  • Dynamic switching characteristics of 1×4 InGaAsP/lnP multimode interference waveguide switch

    S. Tomofuji, S. Matsuo, T. Kakitsuka, K. Kitayama

    2009 International Conference on Photonics in Switching (PS 2009), Pisa, Italy     ThI2-2  2009年09月  [査読有り]

    DOI

  • Ultra-small InGaAsP/InP buried heterostructure photonic crystal laser

    Shinji Matsuo, Akihiko Shinya, Takaaki Kakitsuka, Kengo Nozaki, Toru Segawa, Tomonari Sato, Yoshihiro Kawaguchi, Masaya Notomi

    2009 Lasers and Electro-Optics Society Annual Meeting (LEOS 2009), Belek-Antalya, USA     WH3  2009年09月  [査読有り]

    DOI

  • High-Speed Frequency Modulated DBR Lasers for Long-Reach Transmission

    Takaaki Kakitsuka, Shinji Matsuo

    IEICE TRANSACTIONS ON ELECTRONICS   E92C ( 7 ) 929 - 936  2009年07月  [査読有り]  [招待有り]

     概要を見る

    We present a novel high-speed transmitter consisting of a frequency modulated DBR laser and optical filters. The refractive index modulation in the phase control region of the DBR laser allows highspeed frequency modulation. The generated frequency modulated signal is converted to an intensity modulated signal using the edge of the optical filter pass band. We present theoretical simulations of high-speed modulation characteristics and extension of transmission reach. With the proposed transmitter, we review the experimental demonstration of 180-km transmission of a 10-Gb/s signal with a tuning range of 27 nm and 60-km transmission of a 20-Gb/s signal.

    DOI

  • Semiconductor Double-Ring-Resonator-Coupled Tunable Laser for Wavelength Routing

    Toru Segawa, Shinji Matsuo, Takaaki Kakitsuka, Tomonari Sato, Yasuhiro Kondo, Ryo Takahashi

    IEEE JOURNAL OF QUANTUM ELECTRONICS   45 ( 7 ) 892 - 899  2009年07月  [査読有り]

     概要を見る

    A monolithic widely tunable semiconductor laser based on a double-ring resonator is developed for use in a wavelength-routing switch. By using the double-ring resonator as a wavelength-selective filter, operation over a wide wavelength tuning range is achieved with a low tuning current. This low-tuning-current operation makes the laser very promising as a high-speed tunable light source for a wavelength-routing-based switch by effectively suppressing the thermal wavelength drift induced by current injection. In addition, the laser fabrication process is simpler compared to conventional distributed Bragg reflector tunable lasers. A tuning range of 50.0 nm, covering the entire C-band, is successfully demonstrated with an injection current of less than 5.2 mA. The wavelength drift caused by the thermal transients is less than 5 GHz.

    DOI

  • 20-km transmission of 40-Gb/s signal using frequency modulated DBR laser

    T. Kakitsuka, S. Matsuo, T. Segawa, Y. Shibata, Y. Kawaguchi, R. Takahashi

    2009 Optical Fiber Communication Conference (OFC 2009), San Diego, USA     OThG4  2009年03月  [査読有り]

    DOI

  • All-optical on-chip bit memory based on ultra high Q InGaAsP photonic crystal

    Akihiko Shinya, Shinji Matsuo, Yosia, Takasumi Tanabe, Eiichi Kuramochi, Tomonari Sato, Takaaki Kakitsuka, Masaya Notomi

    OPTICS EXPRESS   16 ( 23 ) 19382 - 19387  2008年11月  [査読有り]

     概要を見る

    We demonstrate all-optical bit memory operation with photonic crystal (PhC) nanocavities based on an InGaAsP substrate with a band gap at a wavelength of about 1.3 mu m. The optical bistability is based on a refractive index modulation caused by carrier-plasma dispersion. The operating energy required for switching is only 30 fJ, and the minimum optical bias power for bistability is 40 mu W, which is about one hundred times less than that required for laser based bistable memories. (C) 2008 Optical Society of America

    DOI PubMed

  • Integrated filtered feedback tunable laser using double-ring-resonator- coupled filter

    Shinji Matsuo, Toru Segawa, Takaaki Kakitsuka, Tomonari Sato, Ryo Takahashi, Hiroyuki Suzuki, Boudewijn Docter, Fouad Karouta, Meint Smit

    2008 IEEE International Semiconductor Laser Conference (ISLC 2008), Sorrent, Italy     WB7  2008年09月  [査読有り]

    DOI

  • 4 × 25 Gb/s frequency-modulated DBR laser array for 100-GbE 40-km reach application

    Shinji Matsuo, Takaaki Kakitsuka, Toru Segawa, Rieko Sato, Yasuo Shibata, Ryo Takahashi, Hiromi Oohashi, Hiroshi Yasaka

    IEEE Photonics Technology Letters   20 ( 17-20 ) 1494 - 1496  2008年09月  [査読有り]

    DOI

  • Successful application of the 8-band kp framework to optical properties of highly strained In(Ga)As/InGaAs quantum wells with strong conduction-valence band coupling

    T. Fujisawa, T. Sato, M. Mitsuhara, T. Kakitsuka, T. Yamanaka, Y. Kondo, F. Kano

    2008 Numerical Simulation of Optoelectronic Devices (NUSOD 2008), Nottingham, UK     ThA5  2008年08月  [査読有り]

    DOI

  • Metalorganic vapor phase epitaxial growth of InAs/InGaAs multiple quantum well structures on InP substrates (Invited paper)

    Tomonari Sato, Manabu Mitsuhara, Takaaki Kakitsuka, Takeshi Fujisawa, Yasuhiro Kondo

    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS   14 ( 4 ) 992 - 997  2008年07月  [査読有り]

     概要を見る

    Device quality InAs/InGaAs multiple quantum well (MQW) structures were grown on InP substrates by metalorganic vapor phase epitaxy (MOVPE) and applied to lasers emitting at wavelengths longer than 2 mu m. InAs/InGaAs MQWs with flat interfaces were obtained by adjusting the growth temperature between 460 degrees C and 510 degrees C. The photoluminescence peak wavelength of the MQWs increases from 1.93 to 2.47 mu m as the thickness of InAs quantum wells increases from 2 to 7 nm. The structural, and optical properties remained almost unchanged even after annealing at 620 degrees C. For 40-mu m-wide stripe broad-area lasers with 5-nm-thick InAs quantum wells, a lasing wavelength longer than 2.3 mu m and an output power higher than 10 mW were achieved under continuous-wave operation at a temperature of 25 degrees C. These results indicate that InAs/InGaAs MQW structures grown by MOVPE are very useful for the active region of 2 mu m wavelength lasers.

    DOI

  • Optical polarization in columnar InAs/GaAs quantum dots: 8-Band k...p calculations

    Toshio Saito, Hiroji Ebe, Yasuhiko Arakawa, Takaaki Kakitsuka, Mitsuru Sugawara

    Physical Review B - Condensed Matter and Materials Physics   77 ( 19 ) 195318-1-11  2008年05月  [査読有り]

     概要を見る

    We have theoretically studied the optical polarization in columnar InAs/GaAs quantum dots (QDs), in which the self-assembled QDs are vertically stacked with no interdot spacing. The model structure of the columnar QDs consists of truncated-cone-shaped InAs QDs with the stacking-layer numbers (SLNs) of 1, 3, 5, 7, and 9. We used the valence-force-field model to calculate the strain distribution. We find that the biaxial strain in the middle layers of the columnar QDs decreases with increasing SLN and becomes negative for SLN=9. This is due to the condition that the vertical lattice constant of InAs in these layers has to match that of the side GaAs. By using the strain-dependent 8-band k...p theory for the electronic states, we calculated the transverse-electric (TE)- and transverse-magnetic (TM)-mode intensities for the electron-hole transitions. The piezoelectric effect is included in the calculations. For SLN=1 and 3, only the TE-mode transition occurs. With increasing SLN beyond 3, the TM-mode intensity increases while the TE-mode one decreases. Consequently, when SLN changes from 7 to 9, the dominant polarization character changes from the TE mode to the TM mode. This dominant polarization change is attributed to the increase of the light-hole character in the wave function of the ground hole state, which is the consequence of the negative biaxial strain in the middle layers for SLN=9. The change in the optical polarization calculated in this study is in good agreement with the photoluminescence experiment reported by Kita [Jpn. J. Appl. Phys., Part 2 41, L1143 (2002)]. © 2008 The American Physical Society.

    DOI

  • All-optical on-chip memory based on ultra high Q InGaAsP photonic crystal nanocavity

    Akihiko Shinya, Shinji Matsuo, Yosia, Takasumi Tanabe, Eiichi Kuramochi, Tomonari Sato, Takaaki Kakitsuka, Masaya Notomi

    2008 Conference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics (CLEO/QELS), San Jose, USA     CThJ4  2008年05月  [査読有り]

    DOI

  • Experimental demonstration of 1x4 InP/lnGaAsP optical integrated multimode interference waveguide switch

    Shintaro Niwa, Shinji Matsuo, Takaaki Kakitsuka, Ken-ichi Kitayama

    2008 International Conference on Indium Phosphide and Related Materials (IPRM 2008), Versailles, France    2008年05月  [査読有り]

    DOI

  • Monolithically integrated filter-free wavelength converter with widely tunable double-ring resonator coupled laser

    T. Segawa, S. Matsuo, T. Kakitsuka, Y. Shibata, T. Sato, Y. Kondo, R. Takahashi

    2008 International Conference on Indium Phosphide and Related Materials (IPRM 2008), Versailles, France    2008年05月  [査読有り]

    DOI

  • Enhanced temperature characteristics of InGaAs/InAlGaAs multi-quantum-well lasers on low-in-content InGaAs ternary substrates

    Takeshi Fujisawa, Masakazu Arai, Takaaki Kakitsuka, Takayuki Yamanaka, Yasuhiro Kondo, Hiroshi Yasaka

    APPLIED PHYSICS EXPRESS   1 ( 4 ) 412031 - 412033  2008年04月  [査読有り]

     概要を見る

    Temperature characteristics of multi-quantum-well lasers on InGaAs ternary substrates are investigated. By using InAlGaAs barriers and low-in-content InGaAs substrates, the characteristic temperature of the laser can reach as high as 150 K between 25 and 85 degrees C due to the enhancement of the material gain. Calculated characteristic temperatures are in good agreement with those obtained by experiment, showing the validity of the results presented here. (C) 2008 The Japan Society of Applied Physics.

    DOI

  • Extended transmission reach using optical filtering of frequency-modulated widely tunable SSG-DBR laser

    S. Matsuo, T. Kakitsuka, T. Segawa, N. Fujiwara, Y. Shibata, H. Oohashi, H. Yasaka, H. Suzuki

    IEEE PHOTONICS TECHNOLOGY LETTERS   20 ( 1-4 ) 294 - 296  2008年01月  [査読有り]

     概要を見る

    We propose a novel transmitter consisting of a frequency-modulated widely tunable super-structure-grating distributed Bragg reflector (SSG-DBR) laser and an optical filter. The SSG-DBR laser acts as a frequency modulating light source with a constant output power by modulating the reverse bias voltage in the phase control (PC) region. By optically filtering the output light from the frequency-modulated laser, we have demonstrated 60- and 180-km transmissions for 20- and 10-Gb/s nonreturn-to-zero (NRZ) signals, respectively. The power penalty was 2.2 dB after the 180-km transmission of a 10-Gb/s NRZ signal as determined by bit-error-rate measurements. Furthermore, an extended transmission reach was achieved with a wide tuning range without controlling the bias and modulating voltages in the PC region.

    DOI

  • Frequency modulated widely tunable SSG-DBR laser with optical filtering for extended transmission reach

    S. Matsuo, T. Kakitsuka, T. Segawa, N. Fujiwara, Y. Shibata, H. Yasaka, H. Suzuki

    2007 Lasers and Electro-Optics Society Annual Meeting (LEOS 2007), Lake Buena Vista, USA     WJ2  2007年10月  [査読有り]

    DOI

  • Full C-band tuning operation of semiconductor double-ring resonator-coupled laser with low tuning current

    T. Segawa, S. Matsuo, T. Kakitsuka, T. Sato, Y. Kondo, H. Suzuki

    IEEE PHOTONICS TECHNOLOGY LETTERS   19 ( 17-20 ) 1322 - 1324  2007年09月  [査読有り]

     概要を見る

    A widely tunable double-ring resonator-coupled laser is developed for use in a photonic packet switching system. By using a double-ring resonator as a wavelength-selective filter, full C-band tuning operation is achieved with a low tuning current, and the fabrication process is simpler than that used for distributed-Bragg-reflector-type tunable lasers. A tuning range of 50.0 nm with a current injection of less than 7 mA is successfully demonstrated.

    DOI

  • Short cavity DBRLaser using vertical groove gratings for large-scale photonic integrated circuits

    Boudewijn Docter, Toru Segawa, Takaaki Kakitsuka, Shinji Matsuo, Tetsuyoshi Ishii, Yoshihiro Kawaguchi, Yasuhiro Kondo, Hiroyuki Suzuki, Fouad Karouta, Meint K. Smit

    IEEE PHOTONICS TECHNOLOGY LETTERS   19 ( 17-20 ) 1469 - 1471  2007年09月  [査読有り]

     概要を見る

    We present a novel compact distributed Bragg reflector (DBR) laser using InP-InGaAsP deep ridge waveguides with vertical groove gratings. Stable single-mode laser operation was achieved with an active cavity length down to 25 mu m and a threshold current of 14 mA. The devices are promising building blocks in large-scale photonic integrated circuits because of their simple structure and low power consumption.

    DOI

  • Optical flip-flop operation using a DBR laser

    Shinji Matsuo, Takaaki Kakitsuka, Toru Segawa, Hiroyuki Suzuki

    2007 Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR 2007), Seoul, Korea    2007年08月  [査読有り]

    DOI

  • Short Cavity DBR Laser Using Vertical Groove-Gratings for Large Scale Photonic Integrated Circuits

    B. Docter, T. Segawa, T. Kakitsuka, S. Matsuo, T. Ishii, Y. Kawaguchi, Y. Kondo, H. Suzuki, F. Karouta, M. K. Smit

    2007 Optoelectronic and Communication Conference (OECC 2007), Tokyo, Japan     13D1-3  2007年07月  [査読有り]

  • MOVPE-grown GROWN InAs/InGaAs multiple-quantum-well lasers emitting at 2.33 μm

    Tomonari Sato, Manabu Mitsuhara, Takaaki Kakitsuka, Yasuhiro Kondo

    2007 International Conference on Indium Phosphide and Related Materials (IPRM 2007), Matsue, Japan     WeA2-3  2007年05月  [査読有り]

    DOI

  • Tunable double-ring-resonator-coupled laser over full C-band with low tuning current

    T. Segawa, S. Matsuo, T. Kakitsuka, T. Sato, Y. Kondo, H. Suzuki

    2007 International Conference on Indium Phosphide and Related Materials (IPRM 2007), Matsue, Japan     FrB2-3  2007年05月  [査読有り]

    DOI

  • Design of a widely tunable laser with a chirped ladder filter

    T. Kakitsuka, S. Matsuo, S. H. Jeong, T. Segawa, H. Okamoto, Y. Kawaguchi, Y. Kondo, Y. Yoshikuni, H. Suzuki

    2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices (NUSOD 2006), Singapore     TuD2  2006年09月  [査読有り]

    DOI

  • Widely tunable laser using microring resonators

    S. Matsuo, T. Segawa, T. Kakitsuka, H. Okamoto, Y. Kawaguchi, Y. Kondo, H. Suzuki, Y. Yoshikuni

    2006 IEEE International Semiconductor Laser Conference (ISLC 2006), Hawaii, USA     TuB2  2006年09月  [査読有り]

    DOI

  • Design of a widely tunable laser with a chirped ladder filter

    Takaaki Kakitsuka, Shinji Matsuo, Seok-Hwan Jeong, Toru Segawa, Hiroshi Okamoto, Yoshihiro Kawaguchi, Yasuhiro Kondo, Yuzo Yoshikuni, Hiroyuki Suzuki

    OPTICAL AND QUANTUM ELECTRONICS   38 ( 12-14 ) 1053 - 1060  2006年09月  [査読有り]

     概要を見る

    We theoretically investigated a digitally tunable laser with a chirped ladder filter and a ring resonator to obtain a wide wavelength tuning range covering the whole C- or L- band. The clear relation between the tuning range and laser structure, especially the ladder filter, is described analytically. The introduction of a chirped structure into a ladder filter is effective in achieving both wide tunability and a stable lasing mode. A numerical simulation based on multimode rate equations shows that a tuning range of over 40 nm and a mode suppression ratio over 40 dB can be achieved by introducing a chirped ladder filter.

    DOI

  • Numerical demonstration of wavelength-insensitive tuning characteristics of ladder-type tunable filter for a widely tunable laser diode

    SH Jeong, S Matsuo, T Kakitsuka, H Suzuki, Y Yoshikuni

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   45 ( 5A ) 4090 - 4096  2006年05月  [査読有り]

     概要を見る

    We propose a wave length-insensitive tunable ladder-type interferometric filter having a novel configuration for use in a widely tunable laser diode. The spectral characteristics of the proposed device are numerically analyzed and compared with those of our previously reported device regarding transmittance and bandwidth. Wavelength-insensitive tuning and flat-topped filter spectra are obtained by optimizing device parameters. We also discuss the applicability of the proposed ladder filter to a widely tunable laser. The proposed tunable laser has a nearly constant threshold current density with tuning current injection. The oscillation frequency of the laser diode can be stabilized by introducing chirping into the ladder filter to obtain a single passband response. These high-performance spectral characteristics make the proposed device feasible for wavelength division-multiplexing-based systems.

    DOI

  • Amplifying characteristics of 1.55-μm polarization-insensitive SOAs with MQW and strained-bulk active layers for device application

    Masayuki Itoh, Yasuo Shibata, Takaaki Kakitsuka, Yoshiaki Kadota, Hideo Sugiura, Yuichi Tohmori

    Journal of Lightwave Technology   24 ( 3 ) 1478 - 1485  2006年03月  [査読有り]

    DOI

  • Tuning range enhanced by self-phase adjustment in mode-hop-free short-active-region DBR laser

    N Fujiwara, N Kikuchi, T Kakitsuka, H Okamoto, Y Kawaguchi, Y Kondo, H Yasaka, Y Yoshikuni, Y Tohmori

    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS   11 ( 5 ) 939 - 944  2005年09月  [査読有り]

     概要を見る

    The mode-hop-free tuning range is increased to 6.0 nm by using the self-phase adjustment effect in a short-active-region distributed Bragg reflector laser. The optical power is more than 1 mW for the whole tuning range, and the maximum power is greater than 4 mW. The self-phase adjustment mechanism is also discussed theoretically.

    DOI

  • Optical polarization control in columnar InAs/GaAs quantum dots: k.p analysis

    T. Saito, T. Nakaoka, T. Kakitsuka, H. Ebe, M. Sugawara, Y. Arakawa

    2005 International Symposium on Quantum Dots and Photonic Crystals (ISQDPC), Tokyo, Japan     Cp-24  2005年03月  [査読有り]

  • Reduction of linewidth enhancement factor in self-assembled dots by optimizing optical gain

    T. Kakitsuka, T. Saito, Y. Arakawa

    2005 International Symposium on Quantum Dots and Photonic Crystals (ISQDPC), Tokyo, Japan     Cp-57  2005年03月  [査読有り]

  • Strain distribution and electronic states in stacked InAs/GaAs quantum dots with dot spacing 0-6 nm

    T Saito, T Nakaoka, T Kakitsuka, Y Yoshikuni, Y Arakawa

    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES   26 ( 1-4 ) 217 - 221  2005年02月  [査読有り]

     概要を見る

    We have calculated the strain distribution and electronic structures in stacked InAs/GaAs quantum dots (QDs) with the dot spacing 6-0 nm. We used the elastic continuum theory for the strain distribution, and the 8-band k . P theory for the electronic structures. For the triply stacked QDs, the light-hole (LH) component of the hole ground state increases with decreasing the dot spacing. The LH component in the columnar QD (dot spacing 0 nm) reaches 21.1 % which is 4.8 times larger than that in the single QD due to the reduction of the biaxial strain. Further increase of the LH component (up to 28.6%) is obtained in the fivefold-stacked columnar QD. This result suggests a possibility of increase in the TMmode transition in the columnar QDs. (C) 2004 Elsevier B.V. All rights reserved.

    DOI

  • Mode-hop-free tuning range enhanced by self-phase-adjustment in a short-active-region DBR laser

    Naoki Fujiwara, Nobuhiro Kikuchi, Takaaki Kakitsuka, Yoshihiro Kawaguchi, Hiroshi Okamoto, Yasuhiro Kondo, Hiroshi Yasaka, Yuzo Yoshikuni, Yuichi Tohmori

    2004 IEEE International Semiconductor Laser Conference (ISLC 2004), Matsue, Japan     SaA3  2004年09月  [査読有り]

    DOI

  • 6.1 nm tuning in a mode-hop-free DBR laser

    N. Fujiwara, T. Kakitsuka, N. Kikuchi, Y. Kawaguchi, H. Okamoto, Y. Kondo, Y. Yoshikuni, Y. Tohmori

    2004 Optoelectronic and Communication Conference (OECC 2004), Yokoyama, Japan     15E2-3  2004年07月  [査読有り]

  • Strain Distribution and Electronic States in Stacked InAs/GaAs Quantum Dots with Dot Spacing 0-6 nm

    T. Saito, T. Nakaoka, T. Kakitsuka, Y. Yoshikuni, Y. Arakawa

    Quantum Dots Conference 2004 (QD 2004), Banff, Canada     THP35  2004年05月  [査読有り]

  • Transition energy control via strain in single quantum dots embedded in micromachined air-bridge

    T Nakaoka, T Kakitsuka, T Saito, Y Arakawa

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   43 ( 4B ) 2069 - 2072  2004年04月  [査読有り]

     概要を見る

    We have fabricated a micromachined air-bridge in which InGaAs self-assernbled quantum dots are embedded. Electrostatic voltage applied between the air-bridge and the substrate pulls the air-bridge down. The deformation of the bridge produces additional strain on the matrix and the dots modifying the electronic states. The modification has been detected through a photoluminescence peak shift of a single dot. The effect of the deformation on the electronic states is evaluated with the aid of theoretical calculation using a finite element method. The good agreement between calculated and experimental energy shifts demonstrates that the energy shift is due to the strain induced by the bridge deformation. Based on the result, we discuss the capability of this micromachined device with quantum dots to control the zero-dimensional electronic system and to measure small deformation and strain.

    DOI

  • Manipulation of electronic states in single quantum dots by micromachined air-bridge

    T Nakaoka, T Kakitsuka, T Saito, Y Arakawa

    APPLIED PHYSICS LETTERS   84 ( 8 ) 1392 - 1394  2004年02月  [査読有り]

     概要を見る

    We demonstrate an approach to manipulate the quantum states of single self-assembled quantum dots via strain. We fabricate a micromachined air-bridge with microelectromechanical systems (MEMS), in which quantum dots are embedded. The air-bridge is deformed by electrostatic force, which produces additional strain on the dots to modify the confining potential. Our method with MEMS technique will allow functional manipulation of the electronic states through the direct modification of the confining potential. (C) 2004 American Institute of Physics.

    DOI

  • Strain distribution and electronic states in stacked InAs/GaAs quantum dots

    T. Saito, T. Nakaoka, T. Kakitsuka, Y. Yoshikuni, Y. Arakawa

    2003 Quantum Dots and Photonic Crystal (QDPC), Tokyo, Japan     P-20  2003年11月  [査読有り]

  • Strain-induced modifications of the electronic states of InGaAs quantum dots embedded in bowed airbridge structures

    T Nakaoka, T Kakitsuka, T Saito, S Kako, S Ishida, M Nishioka, Y Yoshikuni, Y Arakawa

    JOURNAL OF APPLIED PHYSICS   94 ( 10 ) 6812 - 6817  2003年11月  [査読有り]

     概要を見る

    We have fabricated bowed airbridges in which self-assembled InGaAs quantum dots are embedded. Strong strain distribution induced in the bowed airbridge and the effect on the electronic states of the quantum dots are investigated through the measurement of the photoluminescence from the individual dots and the theoretical calculation. A finite element calculation shows the strain in the bowed airbridge to distribute from tensile to compressive along the growth direction. The strain effect on the electronic states of the dots is probed through the photoluminescence peak shift following the deformation of the GaAs matrix of the dots from a wall-shaped structure to the bowed airbridge. The magnitude of the peak shift varies systematically with the position of the quantum dot along the growth direction, clearly reflecting the strain distribution in the bridge. The energy level shift following the deformation is calculated by solving the three-dimensional Schrodinger equation taking into account the strain distribution around the dots embedded in the bridge. The calculation, which agrees well with the experiment, demonstrates that the characteristic strain distribution around the dot embedded in the bowed airbridge modifies not only the energy levels, but also the wave functions. The electron and hole wave functions are modified differently, mainly due to the opposite contribution of the biaxial strain to the hydrostatic ones. (C) 2003 American Institute of Physics.

    DOI

  • Demonstration of MEMS-controlled electronic states in single quantum dots

    T. Nakaoka, T. Kakitsuka, T. Saito, S. Kako, S. Ishida, M. Nishioka, Y. Arakawa

    2003 International Conference on Solid State Devices and Materials (SSDM 2003), Tokyo, Japan     E-1-5  2003年09月  [査読有り]

  • Inherently mode-hop-free distributed Bragg reflector (DBR) laser array

    N Fujiwara, T Kakitsuka, M Ishikawa, F Kano, H Okamoto, Y Kawaguchi, Y Kondo, Y Yoshikuni, Y Tohmori

    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS   9 ( 5 ) 1132 - 1137  2003年09月  [査読有り]

     概要を見る

    An inherently mode-hop-free tuning of 4.5 nm was achieved with a short-active-region distributed Bragg reflector (DBR) laser. The DBR laser contains no phase-adjustment electrode, which greatly simplifies the tuning. Fast tuning of several nanoseconds and error-free operation for 2.5-Gbit/s direct modulation were also observed. A 4-ch array of short-active-region DBR lasers achieved wavelength tuning of 12.5 nm.

    DOI

  • Effect of strain variation on photoluminescence from InGaAs quantum dots in air-bridge structures

    T Nakaoka, T Kakitsuka, T Saito, S Kako, S Ishida, M Nishioka, Y Yoshikuni, Y Arakawa

    PHYSICA STATUS SOLIDI B-BASIC RESEARCH   238 ( 2 ) 289 - 292  2003年07月  [査読有り]

     概要を見る

    We have fabricated freestanding wire (air-bridge) structures with a bowed shape by introducing a strain layer to vary the strain around quantum dots. The photoluminescence peak energy shift following the shape change of the bridge can be observed for individual InGaAs quantum dots. We find systematic dependence of the peak shift on the dot position along the growth direction. The dependence of the peak shift is explained by strain distribution in the bridge. The strain distribution in the bridge as well as in the dot is calculated using a finite element method. Using the strain data, the electronic structures of the dots embedded in the bridge structures are calculated within the effective mass approximation. The calculated energy shifts agree well with the experimental ones.

    DOI

  • Mode-hop-free wavelength-tunable distributed Bragg reflector laser

    N Fujiwara, T Kakitsuka, F Kano, H Okamoto, Y Kawaguchi, Y Kondo, Y Yoshikuni, Y Tohmori

    ELECTRONICS LETTERS   39 ( 7 ) 614 - 615  2003年04月  [査読有り]

     概要を見る

    Mode-hop-free wavelength tuning of 4.45 nm was achieved by a short-active-region distributed Bragg reflector laser without phase control. Simple and continuous tuning was realised with a single tuning current. High-speed wavelength tuning of 5 ns during direct modulation of 2.5 Gbit/s was also achieved.

    DOI

  • Wavelength-selectable DBR Laser Array Inherently Free from Mode-hopping for High-speed Switching

    Y. Tohmori, N. Fujiwara, T. Kakitsuka, Y. Shibata, F. Kano, M. Ishikawa, Y. Kawaguchi, H. Okamoto, Y. Kondo, Y. Yoshikuni

    2003 Optical Fiber Communication Conference (OFC 2003), Atranta, USA     ThF5  2003年03月  [査読有り]

    DOI

  • Numerical analysis of transition energy shift in InAs/GaAs quantum dots induced by strain-reducing layers

    T Kakitsuka, T Saito, T Nakaoka, Y Arakawa, H Ebe, M Sugawara, Y Yoshikuni

    2ND INTERNATIONAL CONFERENCE ON SEMICONDUCTOR QUANTUM DOTS   0 ( 4 ) 1157 - 1160  2003年  [査読有り]

     概要を見る

    The electronic structure of pyramid-like InAs/GaAs quantum dots (QDs) covered with an InGaAs strain-reducing layer is analyzed numerically, focusing on the dependence of the transition energy on the strain-reducing layer thickness. The transition energy of the QD is calculated by the effective mass approximation, taking into account the change of the strain distribution induced by the strain-reducing layer. A large transition energy redshift of more than 60 meV caused by the strain reduction in the QD is obtained, as the strain reducing layer thickness increases. Furthermore, it is found that when strain-reducing layer thickness becomes large, the transition energy redshift saturates. The calculation explains the reported experimental results correctly, which indicates that the strain reducing layer enables control of operation-wavelength over a wide range in various optical devices.

    DOI

  • Effect of strain variation on photoluminescence from InGaAs quantum dots in air-bridge structures

    T. Nakaoka, T. Kakitsuka, T. Saito, S. Kako, S. Ishida, M. Nishioka, Y. Yoshikuni, Y. Arakawa

    2nd International Conference on Semiconductor Quantum Dots (QD 2002), Tokyo, Japan     B-3  2002年09月  [査読有り]

  • Numerical analysis of transition energy shift in InAs/GaAs quantum dots induced by strain-reducing layers

    T. Kakitsuka, T. Saito, T. Nakaoka, Y. Arakawa, H. Ebe, M. Sugawara, Y. Yoshikuni

    2nd International Conference on Semiconductor Quantum Dots (QD 2002), Tokyo, Japan     M-15  2002年09月  [査読有り]

  • Polarization-insensitive SOA with a strained bulk active layer for network device application

    M Itoh, Y Shibata, T Kakitsuka, Y Kadota, Y Tohmori

    IEEE PHOTONICS TECHNOLOGY LETTERS   14 ( 6 ) 765 - 767  2002年06月  [査読有り]

     概要を見る

    Current and wavelength characteristics for 1.55-mum semiconductor optical amplifiers (SOAs) containing bulk active layers with various tensile strains were investigated. The strain dependence of the gain-difference between TE-mode and TM-mode (DeltaG(TE-TM)) was almost linear having the waveguide-width over 0.8-1.5 mum. A -0.12% tensile-strained bulk SOA had very low DeltaG(TE-TM) of less than 0.8 dB ranging the driving current from 0 to 120 mA. The low-polarization-sensitive condition of SOA with a strained-bulk active layer was shown to have very wide range in driving current and wavelength for the network device application.

    DOI

  • Influence of buried structure on polarization sensitivity in strained bulk semiconductor optical amplifiers

    T Kakitsuka, Y Shibata, M Itoh, Y Kadota, Y Tohmori, Y Yoshikuni

    IEEE JOURNAL OF QUANTUM ELECTRONICS   38 ( 1 ) 85 - 92  2002年01月  [査読有り]

     概要を見る

    In order to achieve an accurate design of polarization-insensitive semiconductor optical amplifiers based on tensile-strained bulk InGaAsP, the reduction of strain in the active layer of the buried heterostructure and its influence on polarization sensitivity are analyzed numerically for the first time. The gain calculation, including the strain distribution in the active layer, is examined based on the k . p method for the different active layers. It is found that the strain introduced during the epitaxial growth is strongly reduced after regrowth of the burying layer. In an active layer having the aspect ratio of 1 :4, the strain reduction causes more than a 0.5-dB deviation in the polarization sensitivity of the gain. From a comparison with the experimental results, it is shown that including the effect of the burying layer in the calculation gives an accurate determination of the amount of strain for the polarization independence.

    DOI

  • Current and wavelength characteristics of polarization-insensitive SOAs with strained-bulk active layers

    M. Itoh, Y. Shibata, T. Kakitsuka, Y. Kadota, Y. Kondo, Y. Tohmori

    2001 International Conference on Solid State Devices and Materials (SSDM 2001), Tokyo, Japan     E-1-5  2001年09月  [査読有り]

  • Numerical analysis of polarization sensitivity in strained bulk semiconductor optical amplifiers

    T. Kakitsuka, Y. Shibata, M. Itoh, Y. Tohmori, Y. Yoshikuni

    2001 13th International Conference on Indium Phosphide and Related Materials (IPRM 2001), Nara, Japan     ThA1-5  2001年05月  [査読有り]

  • Theoretical analysis of polarization sensitivity of strained bulk SOAs

    T. Kakitsuka, Y. Shibata, M. Itoh, Y. Tohmori, Y. Yoshikuni

    SPIE Photonics West, Symposiym on Integrated Photonics, San Jose, USA   4283   398 - 405  2001年01月  [査読有り]

    DOI

  • Renormalization group analysis of U(2) Gauge theory with 0-Term in 2 dimensions

    Masahiro Imachi, Takaaki Kakitsuka, Norimasa Tsuzuki, Hiroshi Yoneyama

    Progress of Theoretical Physics   97 ( 5 ) 791 - 808  1997年  [査読有り]

     概要を見る

    A U(2) lattice gauge theory with 0-term in 2 space-time dimensions is investigated. It has a non-Abelian real action and Abelian ((U(1) type) imaginary action. The imaginary action is defined as the standard 0-term. As the effect of a renormalization group (RG) transformation, the non-Abelian imaginary action is induced. After many steps of the RG transformation, the non-Abelian part dies away. After several steps of the RG transformations, the renormalized action approaches the so-called heat kernel action. A phase transition is found only at 0 = π.

    DOI

▼全件表示

Misc

  • Membranes underpin masterful modulation

    Suguru Yamaoka, Nikolaos-Panteleimon Diamantopoulos, Hidetaka Nishi, Takaaki Kakitsuka, Fumio Koyama, Shinji Matsuo

    Compound Semiconductor Magazine   27 ( 6 ) 52 - 57  2021年09月  [招待有り]

  • Ultrahigh-speed directly modulated membrane lasers on SiC

    Suguru Yamaoka, Nikolaos-Panteleimon Diamantopoulos, Hidetaka Nishi, Ryo Nakao, Takuro Fujii, Koji Takeda, Tatsurou Hiraki, Shigeru Kanazawa, Hiromasa Tanobe, Takaaki Kakitsuka, Tai Tsuchizawa, Fumio Koyama, Shinji Matsuo

    OSA Advanced Photonics Congress (APC 2020)   NeTh1B.2  2020年07月  [招待有り]

  • Membrane III-V semiconductor devices for Si Photonics

    Tatsurou Hiraki, Takuma Aihara, Takuro Fujii, Koji Takeda, Takaaki Kakitsuka, Tai Tsuchizawa, Shinji Matsuo

    Compound Semiconductor Magazine   26 ( 5 ) 22 - 26  2020年07月  [招待有り]

  • High-efficiency membrane InGaAsP Mach-Zehnder modulator on Si platform

    Tatsurou Hiraki, Takuma Aihara, Koji Takeda, Takuro Fujii, Takaaki Kakitsuka, Tai Tsuchizawa, Hiroshi Fukuda, Shinji Matsuo

    The conference on Smart Photonic and Optoelectronic Integrated Circuits XXII, SPIE OPTO, Photonic West, San Francisco, USA     11284-22  2020年02月  [招待有り]

    記事・総説・解説・論説等(国際会議プロシーディングズ)  

  • Lateral-current-injection membrane laser diode directly bonded to SiC substrate

    Ryo Nakao, Suguru Yamaoka, Takuro Fujii, Koji Takeda, Tatsurou Hiraki, Hidetaka Nishi, Takaaki Kakitsuka, Tai Tsuchizawa, Shinji Matsuo

    2019 Korean Physical Society Fall Meeting, Gwangju, Korea     D10.05  2019年10月  [招待有り]

    記事・総説・解説・論説等(国際会議プロシーディングズ)  

  • Heterogeneously integrated membrane III-V/Si photonic devices

    Tatsurou Hiraki, Takuma Aihara, Koji Takeda, Takuro Fujii, Hidetaka Nishi, Takaaki Kakitsuka, Tai Tsuchizawa, Hiroshi Fukuda, Shinji Matsuo

    The 10th International Conference on Metamaterials, Photonic Crystals and Plasmonics (META2019), Lisbon, Portugal     3A8  2019年07月  [招待有り]

  • Membrane-based DMLs-on-Si for Energy-efficient 400GbE SDM Transmission

    Nikolaos Panteleimon Diamantopoulos, Kota Shikama, Hidetaka Nishi, Takuro Fujii, Takashi Matsui, Takaaki Kakitsuka, Hiroshi Fukuda, Kazuhide Nakajima, Shinji Matsuo

    OSA Advanced Photonics Congress, Montreal, Canada     NeM3D.5  2019年07月  [招待有り]

    DOI

  • III-V membrane lasers integrated with Si nanowire waveguide

    Takuma Aihara, Tatsurou Hiraki, Koji Takeda, Koichi Hasebe, Takuro Fujii, Tai Tsuchizawa, Takaaki Kakitsuka, Shinji Matsuo

    SPIE OPTO, San Francisco, USA     109390T  2019年03月  [招待有り]

    DOI

  • Ultra-high efficiency III-V on Si MOS capacitor Mach-Zehnder modulator

    T. Aihara, T. Hiraki, K. Hasebe, T. Fujii, K. Takeda, T. Tsuchizawa, T. Kakitsuka, H. Fukuda, S. Matsuo

    SPIE/COS Photonics Asia, 2018, Beijing, China     10823-8  2018年10月  [招待有り]

    DOI

  • Heterogeneous Integration of III-V Semiconductors on Si Photonics Platform

    T. Hiraki, T. Aihara, K. Hasebe, T. Fujii, K. Takeda, H. Nishi, T. Kakitsuka, H. Fukuda, T. Tsuchizawa, S. Matsuo

    AiMES 2018 ECS and SMEQ Joint International Meeting, Cancun, Mexico   86   11 - 16  2018年09月  [招待有り]

    DOI

  • III-V/Si Photonic Integration Platform for On-Si Laser Diodes and High Efficiency Mach-Zehnder Modulators

    T. Hiraki, T. Aihara, K. Takeda, T. Fujii, T. Kakitsuka, T. Tsuchizawa, H. Fukuda, S. Matsuo

    International Conference on Solid State Devices and Materials (SSDM 2018), Tokyo     H-3-04  2018年09月  [招待有り]

  • III-V membrane buried heterostructure lasers on SiO$_2$/Si substrate

    Tomonari Sato, Takuro Fujii, Koji Takeda, Takaaki Kakitsuka, Hiroshi Fukuda, Tai Tsuchizawa, Shinji Matsuo

    OSA Frontiers in Optics + Laser Science APS/DLS (FiO+LS 2018)    2018年09月  [招待有り]

    DOI

  • III-V/Si Integration Platform for Laser Diodes and Mach-Zehnder Modulators

    Tatsurou Hiraki, Takuma Aihara, Koichi Hasebe, Koji Takeda, Takuro Fujii, Takaaki Kakitsuka, Tai Tsuchizawa, Hiroshi Fukuda, Shinji Matsuo

    2018 Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR 2018), Hong Kong     Th2J.2  2018年07月  [招待有り]

    DOI

  • Heterogeneously Integrated III-V/Si Mach-Zehnder Modulator

    T. Hiraki, T. Aihara, K. Hasebe, T. Fujii, K. Takeda, T. Tsuchizawa, T. Kakitsuka, H. Fukuda, S. Matsuo

    23rd Opto-Electronics and Communications Conference (OECC 2018), Jeju, Korea     4D1-1  2018年07月  [招待有り]

    DOI

  • Novel photonic integration for large-bandwidth and powerefficient lasers and modulators

    S. Matsuo, T. Hiraki, H. Nishi, T. Fujii, K. Takeda, T. Aihara, T. Tsuchizawa, T. Kakitsuka, H. Fukuda

    Advanced Photonics Congress 2018 (BGPP, IPR, NP, Networks,NOMA, Sensors, SOF, SPPCom) , Z?rich, Switzerland     ITu4B.2  2018年07月  [招待有り]

    DOI

  • Ultrahigh efficiency III-V on Si MOS capacitor optical modulator

    T. Hiraki, T. Aihara, K. Hasebe, T. Fujii, K. Takeda, T. Tsuchizawa, T. Kakitsuka, H. Fukuda, S. Matsuo

    SPIE Photonics Europe, Strasbourg, France     10689-19  2018年04月  [招待有り]

    DOI

  • Integrated nanocavity lasers

    Shinji Matsuo, Koji Takeda, Takuro Fujii, Tomonari Sato, Takaaki Kakitsuka

    The 48th Winter Colloquium on the Physics of Quantum Electronics (PQE 2018), Snowbird, USA    2018年01月  [招待有り]

  • III-V Membrane Lasers on Silicon for Datacom and Computercom Applications

    T. Kakitsuka, T. Fujii, K. Takeda, H. Nishi, S. Matsuo

    Photonics-Optics Technology Oriented Networking, Information and Computing Systems (PHOTONICS), Austin, USA    2017年02月  [招待有り]

  • SiO$_x$N$_y$ back-end integration technologies for heterogeneously integrated Si platform

    H. Nishi, T. Tsuchizawa, T. Kakitsuka, K. Hasebe, K. Takeda, T. Hiraki, T. Fujii, T. Yamamoto, S. Matsuo

    Pacific Rim Meeting on Electrochemical and Solid-state Science (PRiME 2016), Honolulu, USA   G05-1938  2016年10月  [招待有り]

    DOI

  • Membrane DFB and photonic crystal lasers on Si

    Shinji Matsuo, Koji Takeda, Takuro Fujii, Hidetaka Nishi, Takaaki Kakitsuka

    The 25th International Semiconductor Laser Conference (ISLC 2016), Kobe, Japan     ThC1  2016年09月  [招待有り]

  • 電流注入フォトニック結晶レーザー

    松尾慎治, 武田浩司, 藤井拓郎, 硴塚孝明

    レーザー研究   44 ( 8 ) 497 - 501  2016年08月  [招待有り]

  • Directly Modulated Membrane DFB Lasers and Photonic Crystal Lasers

    S. Matsuo, K. Takeda, T. Fujii, H. Nishi, T. Kakitsuka

    2016 IEEE Photonics Society Summer Topical Meeting Series (SUM), Newport Beach, USA    2016年07月  [招待有り]

  • Epitaxial growth on lattice-mismatched substrate for high-performance lasers

    Ryo Nakao, Masakazu Arai, Wataru Kobayashi, Takaaki Kakitsuka, Tsuyoshi Yamamoto, Shinji Matsuo

    2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016, Toyama, Japan     MoC3-2  2016年06月  [招待有り]

    DOI

  • Electrically driven nanocavity lasers on silicon with photonic-crystal cavity and ultrasmall buried heterostructure

    K. Takeda, T. Fujii, A. Shinya, E. Kuramochi, M. Notomi, K. Hasebe, T. Kakitsuka, S. Matsuo

    International Nanotechnology Conference & Expo, Boltimore, USA    2016年04月  [招待有り]

  • Integrated Nanophotonics for fJ/Bit on-Chip Optical Communications

    A. Shinya, K. Nozaki, E. Kuramochi, K. Takeda, T. Kakitsuka, H. Taniyama, T. Fujii, K. Hasebe, S. Mastuo, M. Notomi

    Design, Automation and Test in Europe (DATE), Dresden, Germany    2016年03月  [招待有り]

  • Photonic-crystal lasers on silicon for chip-scale optical interconnects

    Koji Takeda, Takuro Fujii, Akihiko Shinya, Eiichi Kuramochi, Masaya Notomi, Koichi Hasebe, Takaaki Kakitsuka, Shinji Matsuo

    Photonics West 2016   Proc. SPIE 9767, Novel In-plane semiconductor lasers XV   976710  2016年02月  [招待有り]

    DOI

  • Lateral Current-injection Membrane Lasers Fabricated on a Silicon Substrate

    Takaaki Kakitsuka, Takuro Fujii, Koji Takeda, Hidetaka Nishi, Tomonari Sato, Koichi Hasebe, Tai Tsuchizawa, Tsuyoshi Yamamoto, Koji Yamada, Shinji Matsuo

    NTT Technical Review   14 ( 1 )  2016年01月

  • Low-operating-energy directly modulated lasers on Si

    Shinji Matsuo, Takaaki Kakitsuka

    AIM Photonics Institute Meeting, Implementing Photonic Integration, Cambridge, USA    2015年12月  [招待有り]

  • ネットワークの性能極限を目指す光電子融合ハードウェア技術 シリコン基板上集積横注入薄膜レーザ

    硴塚孝明, 藤井拓郎, 武田浩司, 西英隆, 佐藤具就, 長谷部浩一, 土澤泰, 山本剛, 山田浩治, 松尾慎治

    NTT技術ジャーナル   27 ( 11 ) 23 - 26  2015年11月

  • On-silicon integration of compact and energy-efficient DFB laser with 40-Gbit/s direct modulation

    Shinji Matsuo, Takuro Fujii, Koji Takeda, Hidetaka Nishi, Koichi Hasebe, Takaaki Kakitsuka

    2015 IEEE 12th International Conference on Group IV Photonics, Vancouver, Canada     WF1  2015年08月  [招待有り]

    DOI

  • InP-based membrane optical devices for large-scale photonic integrated circuits

    Takaaki Kakitsuka, Koichi Hasebe, Takuro Fujii, Tomonari Sato, Koji Takeda, Shinji Matsuo

    NTT Technical Review   13 ( 5 )  2015年01月

  • Photonic crystal lasers for computercom applications

    Takaaki Kakitsuka, Shinji Matsuo

    2014 Photonic Networks and Devices (NETWORKS 2014), San Diego, USA     NT2C  2014年07月  [招待有り]

    DOI

  • High temperature operation of lambda-scale embedded active-region photonic-crystal lasers

    T. Sato, K. Takeda, A. Shinya, K. Nozaki, H. Taniyama, K. Hasebe, T. Kakitsuka, M. Notomi, S. Matsuo

    2013 IEEE Photonics Conference (IPC 2013), Bellevue, USA     TuE3.1  2013年09月  [招待有り]

    DOI

  • Current-injection photonic-crystal lasers with ultra-low power consumption

    T. Kakitsuka

    14th Chitose International Forum on Photonics Science and Technology (CIF), Chitose, Japan    2013年07月  [招待有り]

  • Ultralow-threshold electrically driven photonic-crystal nanocavity laser

    T. Sato, K. Takeda, A. Shinya, K. Nozaki, H. Taniyama, K. Hasebe, T. Kakitsuka, M. Notomi, S. Matsuo

    2013 Conference on Lasers and Electro-Optics Pacific Rim (CLEOPR)   ThK3  2013年06月  [招待有り]

    DOI

  • Electrically driven photonic-crystal lasers using an ultra-compact embedded active region

    T. Sato, K. Takeda, A. Shinya, K. Nozaki, H. Taniyama, K. Hasebe, T. Kakitsuka, M. Notomi, S. Matsuo

    2013 IEEE Photonics Society Summer Topical Meeting Series, PSSTMS 2013     36 - 37  2013年  [招待有り]

     概要を見る

    We have successfully developed an electrically driven photonic-crystal nanocavity laser. Thanks to the development of an ultra-compact embedded active-region structure, a record low threshold current and energy needed for transferring a single bit are achieved. © 2013 IEEE.

    DOI

  • Current-injection photonic-crystal laser

    Takaaki Kakitsuka, Shinji Matsuo

    NTT Technical Review   10 ( 12 )  2012年12月

  • Electrically-pumped photonic crystal lasers for optical communications

    S. Matsuo, K. Takeda, T. Sato, M. Notomi, A. Shinya, K. Nozaki, H. Taniyama, K. Hasebe, T. Kakitsuka

    European Conference and Exhibition on Optical Communication (ECOC 2012), Amsterdam, Netherland     Th.1.E  2012年09月  [招待有り]

    DOI

  • Extremely low power nanophotonic devices based on photonic crystals

    K. Nozaki, A. Shinya, T. Tanabe, S. Matsuo, T. Sato, T. Kakitsuka, E. Kuramochi, H. Taniyama, M. Notomi

    Photonics in Switching (PS 2010), Monterey, USA     PWE1  2010年07月  [招待有り]

    DOI

  • Low-power and high-speed operation of InGaAsP/InP photonic crystal nanocavity laser using wavelength-sized buried heterostructure

    Akihiko Shinya, Shinjl Matsuo, Takaaki Kakitsuka, Kengo Nozaki, Toru Segawa, Tomonari Sato, Yoshihiro Kawaguchi, Masaya Notomi

    Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications (CLEO/QELS 2010), San Jose, USA     CWK1  2010年07月  [招待有り]

    DOI

  • InP-Based Photonic Integrated Circuits

    S. Matsuo, T. Segawa, T. Kakitsuka, Y. Shibata, A. Shinya, M. Notomi, T. Sato, Y. Kawaguchi

    2010 Conference on Optical Fiber Communication, Collocated National Fiber Optic Engineers Conference (OFC/NFOEC 2010), San Diego, USA   OWD2  2010年03月  [招待有り]

    DOI

  • All-optical memories based on photonic crystal nanocavities

    A. Shinya, S. Matsuo, K. Nozaki, T. Tanabe, E. Kuramochi, T. Sato, T. Kakitsuka, M. Notomi

    2009 International Conference on Photonics in Switching (PS 2009), Pisa, Italy     ThI3-1  2009年09月  [招待有り]

    DOI

  • OFC/NFOEC2009報告

    硴塚孝明

    光産業技術動向調査報告    2009年03月

  • InP 系半導体光素子

    硴塚孝明

    光産業技術動向調査報告書    2009年03月

  • Frequency modulated, wavelength-agile DBR lasers extend transmission reach

    S. Matsuo, T. Kakitsuka

    SPIE Newsroom     10.1117/2.1200810.1338  2008年10月  [招待有り]

  • Frequency modulated widely tunable SSG-DBR laser with optial filtering for extended transmission reach

    S. Matsuo, T. Kakitsuka

    2008 Asia-Pacific Optical Communications (APOC), Hangzhou, China     WJ2  2008年10月  [招待有り]

  • On-chip all-optical processing based on photonic crystal nanocavities

    M. Notomi, A. Shinya, T. Tanabe, E. Kuramochi, H. Taniyama, S. Matsuo, T. Kakitsuka, T. Sato

    2008 Asia Optical Fiber Communication and Optoelectronic Exposition and Conference (AOE 2008), Shanghai, China     SuD4  2008年10月  [招待有り]

    DOI

  • Frequency modulated widely tunable SSG-DBR laser with optical filtering for extended transmission reach

    S. Matsuo, T. Kakitsuka

    International Symposium on VCSELs and Integrated Photonics, Tokyo, Japan    2007年12月

  • InP-based photonic integrated devices

    Shinji Matsuo, Hiroyuki Ishii, Toru Segawa, Takaaki Kakitsuka, Hiromi Oohashi

    2007 Asia Optical Fiber Communication and Optoelectronic Exposition and Conference (AOE 2007), Shanghai, China     SC2.S4.2  2007年10月  [招待有り]

    DOI

  • Semiconductor tunable lasers based on integrated waveguide filters for wavelength routing applications

    Takaaki Kakitsuka, Shinji Matsuo, Toru Segawa, Hiroyuki Suzuki

    Integrated Photonics and Nanophotonics Research and Applications (IPNRA 2007), Salt Lake City, USA     IMA  2007年07月  [招待有り]

    DOI

  • MEMS manipulation of electronic states in single quantum dots

    T. Nakaoka, T. Kakitsuka, T. Saito, Y. Arakawa

    Frontiers of Nanoscale Science and Technology, Tokyo, Japan    2003年07月

  • Amplifying light-semiconductor optical amplifiers and integrated devices

    Y. Shibata, T. Kakitsuka, I. Ogawa, Y. Tohmori

    NTT R and D   50   622 - 629  2001年01月

▼全件表示

産業財産権

  • 半導体レーザ

    特許第6853768号

    藤原直樹, 佐野公一, 石井啓之, 上田悠太, 硴塚孝明, 松崎秀昭, 金井拓也

    特許権

  • 半導体装置およびその製造方法

    特許第6839035号

    相原卓磨, 松尾慎治, 硴塚孝明, 開達郎

    特許権

  • 半導体光素子

    特許第6783569号

    中尾亮, 硴塚孝明, 松尾慎治

    特許権

  • 半導体光素子

    特許第6738488号

    中尾亮, 硴塚孝明, 松尾慎治

    権利者: 日本電信電話株式会社

    特許権

  • 半導体レーザ

    特許第6588858号

    硴塚 孝明, 西 英隆, 松尾 慎治, 藤井 拓郎, 武田 浩司, 長谷部 浩一

    特許権

  • 半導体レーザ

    特許第6588859号

    硴塚 孝明, 西 英隆, 松尾 慎治, 藤井 拓郎, 武田 浩司, 長谷部 浩一

    特許権

  • 半導体光デバイス

    特許第6588837号

    藤井 拓郎, 松尾 慎治, 硴塚 孝明

    特許権

  • 半導体レーザ

    特許第6510391号

    硴塚 孝明, 松尾 慎治

    特許権

  • 光変調信号生成装置

    特許第6470127号

    長谷部 浩一, 硴塚 孝明, 松尾 慎治

    特許権

  • 半導体レーザ

    特許第6483521号

    硴塚 孝明, 新家 昭彦, 松尾 慎治

    特許権

  • 半導体光素子

    特許第6315600号

    硴塚 孝明, 長谷部 浩一, 松尾 慎治

    特許権

  • フォトニック結晶共振器

    特許第6162665号

    新家 昭彦, 納富 雅也, 松尾 慎治, 野崎 謙悟, 武田 浩司, 倉持 栄一, 硴塚 孝明

    特許権

  • 光回路

    特許第6279994号

    新家 昭彦, 納富 雅也, 松尾 慎治, 野崎 謙悟, 武田 浩司, 倉持 栄一, 硴塚 孝明

    特許権

  • 光回路

    特許第6279983号

    新家 昭彦, 納富 雅也, 松尾 慎治, 野崎 謙悟, 武田 浩司, 倉持 栄一, 硴塚 孝明

    特許権

  • 半導体光素子

    特許第6267584号

    硴塚 孝明, 長谷部 浩一, 佐藤 具就, 武田 浩司, 藤井 拓郎, 松尾 慎治

    特許権

  • 半導体光素子

    特許第6209129号

    硴塚 孝明, 長谷部 浩一, 佐藤 具就, 武田 浩司, 藤井 拓郎, 松尾 慎治

    特許権

  • 光記憶装置

    特許第5483655号

    硴塚 孝明, 武田 浩司, 佐藤 具就, 長谷部 浩一, 松尾 慎治

    特許権

  • フォトニック結晶デバイス

    特許第5695135号

    新家 昭彦, 納富 雅也, 松尾 慎治, 野崎 謙悟, 武田 浩司, 倉持 栄一, 硴塚 孝明

    特許権

  • フォトニック結晶共振器

    特許第5596825号

    新家 昭彦, 納富 雅也, 野崎 謙悟, 倉持 栄一, 松尾 慎治, 硴塚 孝明, 武田 浩司

    特許権

  • 進行波電極型光変調器

    特許第6088349号

    山田 英一, 硴塚 孝明, 柴田 泰夫, 菊池 順裕

    特許権

  • 光変調素子および光変調素子の駆動方法

    特許第6151958号

    硴塚 孝明, 長谷部 浩一, 松尾 慎治

    特許権

  • 光サブキャリア生成装置

    特許第6151954号

    長谷部 浩一, 硴塚 孝明, 松尾 慎治

    特許権

  • 光直交周波数多重分割信号生成器

    特許第5945241号

    長谷部 浩一, 硴塚 孝明, 松尾 慎治

    特許権

  • フォトニック結晶デバイス

    特許第5662494号

    武田 浩司, 硴塚 孝明, 松尾 慎治, 野崎 謙悟

    特許権

  • 光半導体素子

    特許第5918611号

    佐藤 具就, 硴塚 孝明, 長谷部 浩一, 武田 浩司, 松尾 慎治

    特許権

  • 半導体波長可変レーザ

    特許第5458194号

    瀬川 徹, 松尾 慎治, 硴塚 孝明

    特許権

  • 光変調信号生成装置及び光変調信号生成方法

    特許第5373653号

    硴塚 孝明, 松尾 慎治, 柴田 泰夫, 瀬川 徹

    特許権

  • フォトニック結晶デバイス

    特許第5363578号

    松尾 慎治, 硴塚 孝明, 納富 雅也, 新家 昭彦

    特許権

  • 光信号処理装置

    特許第5189956号

    硴塚 孝明, 松尾 慎治, 瀬川 徹, 柴田 泰夫

    特許権

  • 半導体波長可変レーザ

    特許第5001239号

    松尾 慎治, 硴塚 孝明, 瀬川 徹

    特許権

  • 半導体光増幅器

    特許第4944813号

    満原 学, 佐藤 具就, 柴田 泰夫, 深野 秀樹, 藤澤 剛, 硴塚 孝明, 近藤 康洋

    特許権

  • 半導体レーザモジュールおよびレーザ光源

    特許第4719198号

    曲 克明, 硴塚 孝明, 柳川 勉, 西田 好毅, 忠永 修, 梅木 毅伺, 遊部 雅生, 鈴木 博之

    特許権

  • 半導体波長可変レーザ

    特許第4942429号

    松尾 慎治, 瀬川 徹, 硴塚 孝明, 鈴木 博之

    特許権

  • 電磁波発生素子

    特許第4454523号

    富田 勲, 竹ノ内 弘和, 松尾 慎治, 硴塚 孝明, 瀬川 徹, 宮津 純, 味戸 克裕, 鈴木 博之

    特許権

  • 半導体装置

    特許第4375661号

    荒川 泰彦, 中岡 俊裕, 斎藤 敏夫, 硴塚 孝明

    特許権

  • 半導体光素子

    特許第4117778号

    荒川 泰彦, 硴塚 孝明, 吉國 裕三, 斎藤 敏夫, 中岡 俊裕, 江部 広治, 菅原 充

    特許権

  • 波長変換素子、波長変換装置および波長変換方法

    特許第3978645号

    硴塚 孝明, 廣野 卓夫, 吉國 裕三

    特許権

  • 接続型光導波路

    特許第3877973号

    河野 健治, 赤毛 勇一, 硴塚 孝明, 須崎 泰正, 柴田 泰夫, 竹内 博昭

    特許権

  • 導波路型グレーティングフィルタ

    特許第3436891号

    廣野 卓夫, 柴田 泰夫, 奥 哲, 神徳 正樹, ルイ ウェイン, 硴塚 孝明, 関 俊司

    特許権

  • 半導体ヘテロ構造のエネルギー解析方法、半導体ヘテロ構造を有する半導体デバイスの性能予測方法および設計方法

    特許第3649594号

    山中 孝之, 廣野 卓夫, 硴塚 孝明, 関 俊司

    特許権

  • 光変調器

    特許第3697092号

    山中 孝之, 硴塚 孝明, 関 俊司, 吉國 裕三, 横山 清行

    特許権

  • 光制御素子

    特許第3527078号

    硴塚 孝明, 山中 孝之, 吉國 裕三

    特許権

▼全件表示

受賞

  • 第35回櫻井健二郎氏記念賞

    2020年02月   光産業技術振興協会   低しきい値・高速半導体メンブレンレーザの開発  

    受賞者: 松尾慎治, 硴塚孝明, 武田浩司, 佐藤具就

  • 平成24年度電子情報通信学会 論文賞

    2013年05月   電子情報通信学会   High-Temperature Operation of Photonic-Crystal Lasers for On-Chip Optical Interconnection  

    受賞者: 武田浩司, 佐藤具就, 硴塚孝明, 新家昭彦, 野崎謙悟, 陳錦慧, 谷山秀昭, 納富雅也, 松尾慎治

  • 第28回電気通信普及財団テレコムシステム技術賞

    2013年03月   電気通信普及財団   Monolithically Integrated Wavelength-Routing Switch Using Tunable Wavelength Converters with Double-Ring-Resonator Tunable Lasers  

    受賞者: 瀬川徹, 松尾慎治, 硴塚孝明, 柴田泰夫, 佐藤具就, 川口悦弘, 近藤康洋, 高橋亮

  • 平成23年度電子情報通信学会論文賞

    2012年05月   電子情報通信学会   Monolithically Integrated Wavelength-Routing Switch Using Tunable Wavelength Converters with Double-Ring-Resonator Tunable Lasers  

    受賞者: 瀬川徹, 松尾慎治, 硴塚孝明, 柴田泰夫, 佐藤具就, 川口悦弘, 近藤康洋, 高橋亮

共同研究・競争的資金等の研究課題

  • 自由空間電子走行型光電変換デバイスの創生とテラヘルツ波パルスビームの実現

    日本学術振興会  科学研究費助成事業 基盤研究(A)

    研究期間:

    2020年04月
    -
    2023年03月
     

    加藤 和利, 前田 辰郎, 永妻 忠夫, 金谷 晴一, 久保木 猛, 硴塚 孝明, 高畑 清人

  • 超テラビット級光送信器に向けた高速変調半導体レーザの研究

    日本学術振興会  科学研究費助成事業 基盤研究(C)

    研究期間:

    2020年04月
    -
    2023年03月
     

    硴塚 孝明

  • オンチップ光配線のための超低消費電力半導体薄膜光回路の構築

    日本学術振興会  科研費 基盤研究(S)

    研究期間:

    2015年
    -
    2018年
     

    荒井滋久

講演・口頭発表等

  • Siプラットフォーム上O帯メンブレンInGaAlAs電界吸収型変調器

    開達郎, 相原卓磨, 前田圭穂, 藤井拓郎, 佐藤具就, 硴塚孝明, 髙畑清人, 松尾慎治

    第82回応用物理学会秋季学術講演会, 10p-N405-9  

    発表年月: 2021年09月

  • 5 μm活性層長メンブレンDBRレーザの極低エネルギー動作

    菅野絵理奈, 武田浩司, 藤井拓郎, 硴塚孝明, 松尾慎治

    2021年電子情報通信学会ソサイエティ大会, C-3/4-36  

    発表年月: 2021年09月

  • Membrane DMLs on Silicon for 100-Gbps/λ Transmission

    Nikolaos-Panteleimon Diamantopoulos, Suguru Yamaoka, Takuro Fujii, Hidetaka Nishi, Koji Takeda, Tai Tsuchizawa, Takaaki Kakitsuka, Shinji Matsuo  [招待有り]

    2021年電子情報通信学会総合大会  

    発表年月: 2021年03月

  • Si マッハ・ツェンダ変調器とInGaAsP DFB レーザのSi 基板上集積

    相原卓磨, 開達郎, 藤井拓郎, 武田浩司, 土澤泰, 硴塚孝明, 福田浩, 松尾慎治

    第68回応用物理学会春季学術講演会, 16p-Z10-10  

    発表年月: 2021年03月

  • Siプラットフォーム上薄膜InGaAsP電界吸収型変調器

    開達郎, 相原卓磨, 前田圭穂, 藤井拓郎, 土澤泰, 髙畑清人, 硴塚孝明, 松尾慎治  [招待有り]

    信学技報, OCS2020-41 OPE2020-73 LQE2020-79  

    発表年月: 2021年02月

  • SiC基板上メンブレンレーザにおける接合界面SiO2膜の薄膜化

    山岡優, 中尾亮, 藤井拓郎, 武田浩司, 開達郎, 西英隆, 硴塚孝明, 土澤泰, 松尾慎治

    2020年第81回応用物理学会秋季学術講演会 9a-Z13-1  

    発表年月: 2020年09月

    開催年月:
    2020年09月
    -
     
  • Si Mach-Zehnder変調器とInGaAsP半導体光増幅器のSi基板上集積

    相原卓磨, 開達郎, 藤井拓郎, 武田浩司, 土澤泰, 硴塚孝明, 福田浩, 松尾慎治

    2020年電子情報通信学会ソサイエティ大会 C-3/4-39  

    発表年月: 2020年09月

    開催年月:
    2020年09月
    -
     
  • Si基板上薄膜InGaAsPマッハ・ツェンダ変調器におけるアーム内半導体光増幅器の集積

    相原卓磨, 開達郎, 藤井拓郎, 武田浩司, 土澤泰, 硴塚孝明, 松尾慎治

    2020年電子情報通信学会総合大会, C-3/4-58  

    発表年月: 2020年03月

  • メンブレンDBRレーザの低しきい値電流化

    菅野絵理奈, 武田浩司, 藤井拓郎, 硴塚孝明, 松尾慎治

    2020年電子情報通信学会総合大会, C-3/4-34  

    発表年月: 2020年03月

  • SiC基板上1.3 μm帯分布反射型メンブレンレーザの小信号応答の解析

    山岡優, 中尾亮, 藤井拓郎, 武田浩司, 開達郎, 西英隆, Nikolaos-Panteleimon Diamantopoulos, 硴塚孝明, 土澤泰, 松尾慎治

    第67回応用物理学会春季学術講演会, 14a-B410-6  

    発表年月: 2020年03月

  • SiC基板上横注入メンブレンレーザのステージ温度130度動作

    山岡優, 中尾 亮, 藤井拓郎, 武田浩司, 開 達郎, 西 英隆, 硴塚孝明, 土澤 泰, 松尾慎治

    第38回電子材料シンポジウム, Fr1-4  

    発表年月: 2019年10月

  • 波長多重III-Vデバイスのオンシリコン集積に向けたInP on insulator基板上選択成長技術

    藤井拓郎, 佐藤具就, 武田浩司, 硴塚孝明, 松尾慎治

    第38回電子材料シンポジウム, Th1-3  

    発表年月: 2019年10月

  • マッハツェンダ変調器と半導体光増幅器のSi上集積

    開達郎, 相原卓磨, 藤井拓郎, 武田浩司, 硴塚孝明, 土澤泰, 松尾慎治

    第80回応用物理学会秋季学術講演会, 19p-E206-8  

    発表年月: 2019年09月

  • Epitaxial Growth Technique using InP-on-Insulator towards III-V/Si Photonic Integrated Circuits

    藤井拓郎, 佐藤具就, 武田浩司, 硴塚孝明, 松尾慎治  [招待有り]

    第80回応用物理学会秋季学術講演会 20a-E215-1  

    発表年月: 2019年09月

  • SiC基板上1.3 μm帯分布反射型メンブレンレーザの進展

    山岡優, 中尾 亮, 藤井拓郎, 武田浩司, 開 達郎, 西 英隆, 硴塚孝明, 土澤 泰, 松尾慎治  [招待有り]

    2019年電子情報通信学会ソサイエティ大会,C-3-9  

    発表年月: 2019年09月

  • メンブレンInGaAsP位相シフタとSiN導波路を用いたマッハ・ツェンダ変調器

    相原卓磨, 開 達郎, 藤井拓郎, 武田浩司, 土澤 泰, 硴塚孝明, 松尾慎治  [招待有り]

    2019年電子情報通信学会ソサイエティ大会, C-3-52  

    発表年月: 2019年09月

  • Si基板上薄膜InGaAsPマッハツェンダ変調器の40Gbit/sエラーフリー動作

    相原卓磨, 開達郎, 藤井拓郎, 武田浩司, 土澤泰, 硴塚孝明, 松尾慎治

    2019年電子情報通信学会総合大会, C-3-39  

    発表年月: 2019年03月

  • Siプラットフォーム上低消費電力半導体光増幅器

    開達郎, 相原卓磨, 武田浩司, 藤井拓郎, 土澤泰, 硴塚孝明, 松尾慎治

    第66回応用物理学会春季学術講演会, 11p-W331-4  

    発表年月: 2019年02月

  • SiC基板上1.3μm帯横注入メンブレンレーザの作製と発振特性

    山岡優, 中尾亮, 藤井拓郎, 武田浩司, 開達郎, 西英隆, 硴塚孝明, 土澤泰, 松尾慎治

    第66回応用物理学会春季学術講演会, 12a-W611-10  

    発表年月: 2019年02月

  • Si基板上薄膜InGaAsPマッハツェンダ変調器

    開 達郎, 相原 卓磨, 武田 浩司, 藤井 拓郎, 硴塚 孝明, 土澤 泰, 福田 浩, 松尾 慎治  [招待有り]

    電子情報通信学会技術研究報告, 118, 299, LQE2018-85  

    発表年月: 2018年11月

  • Si基板上InGaAsPマッハツェンダ変調器とInGaAs受光器の集積

    開達郎, 相原卓磨, 武田浩司, 藤井拓郎, 土澤泰, 硴塚孝明, 福田浩, 松尾慎治

    第79回応用物理学会秋季学術講演会, 18p-212A-14  

    発表年月: 2018年09月

  • メンブレンレーザによる低消費電力光インターコネクト

    藤井拓郎, 西英隆, 武田浩司, 菅野絵理奈, 硴塚孝明, 土澤泰, 松尾慎治  [招待有り]

    第5回超高速光エレクトロニクス研究会(UFO)  

    発表年月: 2018年06月

  • 8ch直接変調メンブレンレーザアレイとSiN AWGフィルタのSi基板上モノリシック集積

    西英隆, 藤井拓郎, DIAMANTOPOULOS Nikolaos-Panteleimon, 武田浩司, 菅野絵理奈, 硴塚孝明, 土澤泰, 福田浩, 松尾慎治

    電子情報通信学会技術研究報告, 118, 62, LQE2018-17  

    発表年月: 2018年05月

  • 埋め込みヘテロ構造を用いたSi上薄膜InGaAsPマッハツェンダ変調器

    開達郎, 相原卓磨, 藤井拓郎, 武田浩司, 土澤泰, 硴塚孝明, 福田浩, 松尾慎治

    第65回応用物理学会春季学術講演会, 18p-B201-6  

    発表年月: 2018年03月

  • 高効率III‐V/Si MOSキャパシタマッハツェンダ変調器

    開達郎, 相原卓磨, 長谷部浩一, 武田浩司, 藤井拓郎, 土澤泰, 硴塚孝明, 福田浩, 松尾慎治  [招待有り]

    2018年電子情報通信学会総合大会, C-4-17  

    発表年月: 2018年03月

  • III‐V/Si MOSキャパシタマッハツェンダ変調器の多値変調動作

    開達郎, 相原卓磨, 長谷部浩一, 藤井拓郎, 武田浩司, 硴塚孝明, 土澤泰, 福田浩, 松尾慎治

    第78回応用物理学会秋季学術講演会, 7a-A504-4  

    発表年月: 2017年08月

  • 短共振器両側DRレーザの活性層長依存性

    菅野絵理奈, 武田浩司, 藤井拓郎, 長谷部浩一, 西英隆, 山本剛, 硴塚孝明, 松尾慎治

    2017年電子情報通信学会ソサイエティ大会, C-4-7  

    発表年月: 2017年08月

  • III-V/Si MOSキャパシタマッハツェンダ変調器

    開 達郎, 相原 卓磨, 長谷部 浩一, 藤井 拓郎, 武田 浩司, 硴塚 孝明, 土澤 泰, 福田 浩, 松尾 慎治

    電子情報通信学会技術研究報告, 1167, 61, LQE2017-13  

    発表年月: 2017年05月

  • シリコン細線導波路上薄膜レーザの作製

    相原卓磨, 開達郎, 長谷部浩一, 藤井拓郎, 武田浩司, 西英隆, 土澤泰, 硴塚孝明, 松尾慎治

    第64回応用物理学会春季学術講演会, 16p-F204-10  

    発表年月: 2017年03月

  • III-V/Si MOSキャパシタマッハツェンダ変調器による10Gb/s強度変調

    開達郎, 相原卓磨, 長谷部浩一, 藤井拓郎, 武田浩司, 硴塚孝明, 土澤泰, 福田浩, 松尾慎治

    第64回応用物理学会春季学術講演会, 16p-F204-11  

    発表年月: 2017年03月

  • 1.3μm帯InGaAlAs系直接変調メンブレンDRレーザアレイ

    藤井拓郎, 西英隆, 武田浩司, 菅野絵理奈, 長谷部浩一, 硴塚孝明, 土澤泰, 松尾慎治  [招待有り]

    2017年電子情報通信学会総合大会, C-3-21  

    発表年月: 2017年03月

  • InP‐Si MOS構造光変調器の作製と評価

    開達郎, 相原卓磨, 長谷部浩一, 武田浩司, 藤井拓郎, 土澤泰, 硴塚孝明, 山本剛, 松尾慎治

    第77回応用物理学会秋季学術講演会, 14p-B4-1  

    発表年月: 2016年09月

  • オンシリコン短共振器メンブレンレーザの室温連続発振

    菅野 絵理奈, 武田 浩司, 藤井 拓郎, 長谷部 浩一, 西 英隆, 山本 剛, 硴塚 孝明, 松尾 慎治

    電子情報通信学会技術研究報告, 116, 195, LQE2016-28  

    発表年月: 2016年08月

  • シリコン基板上に集積した横注入薄膜レーザー

    硴塚孝明  [招待有り]

    レーザー学会東京支部 第27回 若手技術者のためのレーザー応用セミナー  

    発表年月: 2016年07月

  • Si基板に直接接合したInP薄膜上へのInGaAsP系MQW成長

    藤井拓郎, 武田浩司, 菅野絵里奈, 長谷部浩一, 山本剛, 硴塚孝明, 松尾慎治

    第63回応用物理学会春季学術講演会, 21p-H112-9  

    発表年月: 2016年03月

  • シリコン基板上化合物半導体デバイス集積

    硴塚孝明  [招待有り]

    エイトラムダフォーラム2015第4回会合  

    発表年月: 2015年12月

  • GaAs/InGaAs系1.3μm帯メタモルフィックレーザの高速変調動作

    中尾亮, 荒井昌和, 小林亘, 硴塚孝明, 山本剛, 松尾慎治  [招待有り]

    電子情報通信学会技術研究報告, 115, 378, LQE2015-126  

    発表年月: 2015年12月

  • Si基板上フォトニック結晶レーザの進展

    武田 浩司, 藤井 拓郎, 倉持 栄一, 新家 昭彦, 納富 雅也, 長谷部 浩一, 硴塚 孝明, 松尾 慎治  [招待有り]

    2015年電子情報通信学会ソサイエティ大会, C-4-1  

    発表年月: 2015年08月

  • SiOxスポットサイズ変換器を集積したオンSiメンブレン分布反射型レーザ

    西英隆, 藤井拓郎, 武田浩司, 長谷部浩一, 硴塚孝明, 土澤泰, 山本剛, 山田浩治, 松尾慎治

    第76回応用物理学会秋季学術講演会, 13a-2S-6  

    発表年月: 2015年08月

  • 単一モード位相アレイフォトニック結晶レーザ(2)

    新家昭彦, 野崎謙悟, 倉持栄一, 硴塚孝明, 武田浩司, 谷山秀昭, 松尾慎治, 納富雅也

    第76回応用物理学会秋季学術講演会, 16p-2A-11  

    発表年月: 2015年08月

  • Heterogeneous integration of InGaAsP/InP-buried heterostructure and Si waveguide using InP growth on InP membrane bonded to Si substrate

    藤井拓郎, 武田浩司, 西英隆, 長谷部浩一, 硴塚孝明, 土澤泰, 山本剛, 松尾慎治

    第34回電子材料シンポジウム(EMS34)  

    発表年月: 2015年07月

  • Si細線上へのInP系埋込みヘテロ構造の集積

    藤井拓郎, 武田浩司, 西英隆, 長谷部浩一, 硴塚孝明, 山本剛, 山田浩治, 松尾慎治

    第62回応用物理学会春季学術講演会, 12p-A16-10  

    発表年月: 2015年02月

  • SiO2/Si基板上InP系活性層薄膜への埋込み成長によるレーザ作製

    藤井 拓郎, 佐藤 具就, 武田 浩司, 長谷部 浩一, 硴塚 孝明, 松尾 慎治

    電子情報通信学会技術研究報告, LQE2014-86  

    発表年月: 2014年10月

  • 斜めSOI細線導波路上に配置されたInPフォトニック結晶レーザの小型ハイブリッド設計

    新家昭彦, 野崎謙悟, 倉持栄一, 硴塚孝明, 武田浩司, 佐藤具就, 谷山秀昭, 長谷部浩一, 藤井拓郎, 松尾慎治, 納富雅也

    第75回応用物理学会秋季学術講演会, 17p-C8-4  

    発表年月: 2014年09月

  • Siウェハに直接接合したInGaAsP多重量子井戸薄膜の高温環境耐性

    藤井拓郎, 佐藤具就, 武田浩司, 長谷部浩一, 硴塚孝明, 松尾慎治

    第75回応用物理学会秋季学術講演会, 18a-A20-1  

    発表年月: 2014年09月

  • 光インタコネクションに向けたフォトニック結晶レーザと薄膜レーザ

    硴塚 孝明, 松尾 慎治  [招待有り]

    2014年電子情報通信学会ソサイエティ大会, CI-1-6  

    発表年月: 2014年09月

  • シリコン酸化膜上の横注入DFBレーザ

    松尾 慎治, 藤井 拓郎, 長谷部 浩一, 武田 浩司, 佐藤 具就, 硴塚 孝明

    電子情報通信学会技術研究報告, 114, 187, LQE2014-29  

    発表年月: 2014年08月

  • イオン注入・熱拡散を用いた横方向PN接合DFBレーザの25Gb/s直接変調

    長谷部浩一, 武田浩司, 藤井拓郎, 佐藤具就, 硴塚孝明, 松尾慎治

    第61回応用物理学関係学術連合講演会, 18a-F9-5  

    発表年月: 2014年03月

  • MOVPEによるSiO2/Si基板上InGaAsP量子井戸構造のInP埋込み成長

    藤井拓郎, 佐藤具就, 武田浩司, 長谷部浩一, 硴塚孝明, 松尾慎治  [招待有り]

    第61回応用物理学関係学術連合講演会,18a-E11-8  

    発表年月: 2014年03月

  • Si基板上電流注入LEAPレーザの室温連続発振

    武田浩司, 佐藤具就, 藤井拓郎, 倉持栄一, 納富雅也, 長谷部浩一, 硴塚孝明, 松尾慎治

    第61回応用物理学関係学術連合講演会, 18a-E16-3  

    発表年月: 2014年03月

  • 漏れ導波路による埋込ヘテロ構造フォトニック結晶共振器の単一モード化

    新家昭彦, 佐藤具就, 武田浩司, 野崎謙悟, 倉持栄一, 硴塚孝明, 谷山秀昭, 長谷部浩一, 藤井拓郎, 松尾慎治, 納富雅也

    第61回応用物理学関係学術連合講演会, 17p-E16-10  

    発表年月: 2014年03月

  • 波長サイズ埋込活性層フォトニック結晶レーザの低エネルギー動作

    武田 浩司, 佐藤 具就, 新家 昭彦, 倉持 栄一, 納富 雅也, 長谷部 浩一, 硴塚 孝明, 松尾 慎治

    2013年電子情報通信学会ソサイエティ大会, C-4-10  

    発表年月: 2013年09月

  • 電流狭窄溝を有するフォトニック結晶レーザ (レーザ・量子エレクトロニクス)

    武田 浩司, 佐藤 具就, 硴塚 孝明, 新家 昭彦, 野崎 謙悟, 谷山 秀昭, 納富 雅也, 長谷部 浩一, 松尾 慎治

    電子情報通信学会技術研究報告, 113, 190, LQE2013-43  

    発表年月: 2013年08月

  • インライン出力導波路を用いたLEAPレーザの単一モード発振

    新家昭彦, 佐藤具就, 武田浩司, 野崎謙悟, 倉持栄一, 硴塚孝明, 谷山秀昭, 藤井拓郎, 松尾慎治, 納富雅也

    第74回応用物理学会学術講演会, 18p-A3-8  

    発表年月: 2013年08月

  • 波長サイズ埋込み活性層フォトニック結晶レーザの高出力化

    佐藤具就, 武田浩司, 新家昭彦, 倉持栄一, 納富雅也, 長谷部浩一, 硴塚孝明, 松尾慎治

    第74回応用物理学会学術講演会, 16p-A8-13  

    発表年月: 2013年08月

  • 超低消費エネルギーで動作する電流注入フォトニック結晶レーザ

    硴塚 孝明, 佐藤 具就, 武田 浩司, 長谷部 浩一, 新家 昭彦, 野崎 謙悟, 谷山 秀昭, 小林 亘, 納富 雅也, 松尾 慎治  [招待有り]

    2013年電子情報通信学会総合大会, CI-1-2  

    発表年月: 2013年03月

  • LEAPレーザとフォトディテクタを集積した5Gb/s光リンク

    武田浩司, 佐藤具就, 新家昭彦, 野崎謙悟, 谷山秀昭, 納富雅也, 硴塚孝明, 長谷部浩一, 松尾慎治

    第60回応用物理学関係学術連合講演会, 28p-C1-19  

    発表年月: 2013年03月

  • 低しきい値電流駆動埋込活性層フォトニック結晶レーザの高温動作

    佐藤具就, 武田浩司, 硴塚孝明, 長谷部浩一, 新家昭彦, 野崎謙悟, 谷山秀昭, 小林亘, 納富雅也, 松尾慎治

    第73回応用物理学会学術講演会, 14a-B1-1  

    発表年月: 2012年08月

  • 電流注入LEAPレーザの10Gb/s直接変調動作

    武田浩司, 佐藤具就, 新家昭彦, 野崎謙悟, 谷山秀昭, 納富雅也, 硴塚孝明, 長谷部浩一, 松尾慎治

    第73回応用物理学会学術講演会, 12p-C6-3  

    発表年月: 2012年08月

  • 半導体マッハ・ツェンダ光変調器を用いたアーム間バイアス電圧調整による光サブキャリア生成

    長谷部 浩一, 菊池 順裕, 柴田 泰夫, 武田 浩司, 布谷 伸浩, 硴塚 孝明, 松尾 慎治

    2012年電子情報通信学会ソサエティ大会, C-4-3  

    発表年月: 2012年08月

  • 埋込み活性層を有するフォトニック結晶レーザの高温動作特性

    硴塚 孝明, 佐藤 具就, 武田 浩司, 長谷部 浩一, 野崎 謙悟, 納富 雅也, 松尾 慎治

    2012年電子情報通信学会ソサエティ大会, C-4-6  

    発表年月: 2012年08月

  • フォトニック結晶レーザを用いた光機能素子

    硴塚孝明  [招待有り]

    第14回先端光量子科学アライアンスセミナー  

    発表年月: 2012年03月

  • 波長サイズ埋込活性層フォトニック結晶レーザの電流注入特性

    武田浩司, 佐藤具就, 新家昭彦, 野崎謙悟, 谷山秀昭, 納富雅也, 硴塚孝明, 長谷部浩一, 松尾慎治

    第59回応用物理学関係学術連合講演会, 16a-E5-5  

    発表年月: 2012年02月

  • 波長サイズ埋込活性層フォトニック結晶レーザの作製

    佐藤具就, 武田浩司, 硴塚孝明, 長谷部浩一, 新家昭彦, 野崎謙悟, 谷山秀昭, 納富雅也, 松尾慎治

    第59回応用物理学関係学術連合講演会, 16a-F3-10  

    発表年月: 2012年02月

  • 光RAMバッファアドレス用InGaAsP/InP多モード干渉型光スイッチ

    北山研一, 久保徹朗, 松尾慎治, 硴塚孝明  [招待有り]

    2011年電子情報通信学会総合大会, C-3-31  

    発表年月: 2011年02月

  • EA変調器集積DFBレーザのデュアル変調動作による10Gbit/s, 180km伝送

    長谷部 浩一, 松尾 慎治, 三条 広明, 大木 明, 硴塚 孝明, 柴田 泰夫

    電子情報通信学会技術研究報告, 110, 396, LQE2010-139  

    発表年月: 2011年01月

  • 二重リング共振器型波長可変レーザを集積した波長ルーティング型光スイッチ

    瀬川 徹, 松尾 慎治, 硴塚 孝明, 柴田 泰夫, 佐藤 具就, 川口 悦弘, 近藤 康洋, 高橋 亮

    電子情報通信学会技術研究報告, 110, 179, LQE2010-43  

    発表年月: 2010年08月

  • 高反射ミラー集積リング共振器型波長可変レーザを用いた波長ルーティング型光スイッチ

    瀬川徹, 松尾慎治, 硴塚孝明, 柴田泰夫, 佐藤具就, 高橋亮

    第71回応用物理学会学術講演会, 14p-G-3  

    発表年月: 2010年08月

  • 1×4 InGaAsP/InP多モード干渉導波路型スイッチの光増幅器の集積化による無損失化

    久保 徹朗, 友藤 真司, 松尾 慎治, 硴塚 孝明, 北山 研一

    2010年電子情報通信学会ソサイエティ大会, B-12-11  

    発表年月: 2010年08月

  • 周波数変調レーザアレイ

    松尾慎治, 硴塚孝明  [招待有り]

    第4 回超高速光エレクトロニクス研究会  

    発表年月: 2010年04月

  • 周波数変調レーザを用いた多チャンネルアレイ

    松尾慎治, 硴塚孝明  [招待有り]

    第3 回集積光デバイスと応用技術研究会  

    発表年月: 2010年02月

  • InGaAsP/InP埋め込みヘテロ構造を持つフォトニック結晶ナノ共振器

    新家昭彦, 松尾慎治, 硴塚孝明, 野崎謙悟, 田辺孝純, 倉持栄一, 佐藤具就, 川口悦弘, 納富雅也

    第70回応用物理学会学術講演会, 8p-B-8  

    発表年月: 2009年09月

  • リング共振器型波長可変レーザを集積した波長ルーティング型光スイッチの動的特性

    瀬川徹, 松尾慎治, 硴塚孝明, 柴田泰夫, 佐藤具就, 川口悦弘, 近藤康洋, 高橋亮

    第70回応用物理学会学術講演会, 9a-ZN-8  

    発表年月: 2009年09月

  • 埋め込みヘテロ構造を持つフォトニック結晶レーザ

    松尾慎治, 新家昭彦, 硴塚孝明, 野崎謙悟, 瀬川徹, 佐藤具就, 川口悦弘, 納富雅也

    第70回応用物理学会学術講演会, 8p-B-7  

    発表年月: 2009年09月

  • OFC/NFOEC2009報告

    硴塚孝明  [招待有り]

    2009年度第一回光材料・応用技術研究会  

    発表年月: 2009年06月

  • 周波数変調DBRレーザを用いた40Gbps変調とSMF20km伝送

    硴塚 孝明, 松尾 慎治, 瀬川 徹, 柴田 泰夫, 川口 悦弘, 高橋 亮

    電子情報通信学会技術研究報告, 109, 93, LQE2009-31  

    発表年月: 2009年06月

  • 1×4 InGaAsP/InP多モード干渉導波路型光スイッチの動的スイッチング特性

    友藤 真司, 松尾 慎治, 硴塚 孝明, 北山 研一

    電子情報通信学会技術研究報告, OCS2009-11  

    発表年月: 2009年06月

  • 周波数変調DBRレーザと光フィルタによる40Gb/s信号のSMF20km伝送特性

    硴塚孝明, 松尾慎治, 瀬川徹, 柴田泰夫, 川口悦弘, 高橋亮

    第56 回応用物理学会学術講演会, 1p-G-1  

    発表年月: 2009年03月

  • InGaAsPフォトニック結晶ナノ共振器をベースとする低消費パワー・超小型光ビットメモリ(2)

    新家昭彦, 松尾慎治, 野崎謙悟, 田辺孝純, 倉持栄一, 佐藤具就, 硴塚孝明, 納富雅也

    第56 回応用物理学関係連合講演会, 30p-ZN-9  

    発表年月: 2009年03月

  • 半導体二重リング共振器を用いた波長可変レーザとその展開

    瀬川 徹, 松尾 慎治, 硴塚 孝明, 佐藤 具就, 近藤 康洋, 鈴木 博之, 高橋 亮  [招待有り]

    電子情報通信学会技術研究報告, 108, 351, LQE2008-134  

    発表年月: 2008年12月

  • InGaAsPフォトニック結晶ナノ共振器を用いた低消費エネルギー・超小型光ビットメモリ

    新家昭彦, 松尾慎治, Yosia, 田辺孝純, 倉持栄一, 佐藤具就, 硴塚孝明, 納富雅也  [招待有り]

    2008年電子情報通信学会ソサイエティ大会, CS-6-7  

    発表年月: 2008年09月

  • InGaAsPフォトニック結晶ナノ共振器をベースとする低消費パワー・超小型光ビットメモリ

    新家昭彦, 松尾慎治, YOSIA, 田辺孝純, 倉持栄一, 佐藤具就, 硴塚孝明, 納富雅也

    第69回応用物理学会学術講演会, 3p-V-8  

    発表年月: 2008年09月

  • 半導体二重リング共振器型波長可変レーザを用いた波長変換素子の動的特性

    瀬川徹, 松尾慎治, 硴塚孝明, 柴田泰夫, 佐藤具就, 近藤康洋, 高橋亮

    第69回応用物理学会学術講演会, 4a-ZN-1  

    発表年月: 2008年09月

  • 周波数変調レーザと光フィルタリングを用いた高速長距離伝送技術

    硴塚 孝明, 松尾 慎治  [招待有り]

    2008 年電子情報通信学会ソサイエティ大会, BCS-2-7  

    発表年月: 2008年09月

  • 化合物半導体フォトニック結晶超小型共振器をベースとする全光メモリ

    新家 昭彦, 松尾 慎治, Yosia, 田辺 孝純, 倉持 栄一, 佐藤 具就, 硴塚 孝明, 舘野 功太, 俵 毅彦, 納富 雅也

    電子情報通信学会技術研究報告, 108, 114, LQE2008-22  

    発表年月: 2008年06月

  • 周波数変調DBRレーザと光フィルタリング法を用いた高速長距離伝送

    硴塚孝明, 松尾慎治  [招待有り]

    第4 回超高速光エレクトロニクス研究会  

    発表年月: 2008年04月

  • InGaAsPフォトニック結晶ナノ共振器をベースとする光双安定メモリ

    新家昭彦, 松尾慎治, YOSIA, 田辺孝純, 倉持栄一, 佐藤具就, 硴塚孝明, 納富雅也

    第55 回応用物理学関係連合講演会, 28p-ZX-14  

    発表年月: 2008年03月

  • InP/InGaAsPを用いた4チャネル多モード干渉導波路型光スイッチ

    丹羽慎太朗, 松尾慎治, 硴塚孝明, 北山研一

    第55 回応用物理学関係連合講演会, 28p-ZB-2  

    発表年月: 2008年03月

  • リング共振器型波長可変レーザをモノリシック集積したフィルタフリー波長変換素子

    瀬川徹, 松尾慎治, 硴塚孝明, 柴田泰夫, 佐藤具就, 近藤康洋, 高橋亮  [招待有り]

    第55 回応用物理学関係連合講演会, 29a-ZG-9  

    発表年月: 2008年03月

  • 8バンドk・p摂動法による高歪InGaAs量子井戸のバンド構造解析

    藤澤剛, 佐藤具就, 満原学, 硴塚孝明, 山中孝之, 近藤康洋, 八坂洋

    第55 回応用物理学関係連合講演会, 29a-ZQ-6  

    発表年月: 2008年03月

  • 周波数変調SSG-DBRレーザと光フィルタを用いた高速長距離伝送

    硴塚 孝明, 松尾 慎治, 瀬川 徹, 鈴木 博之, 藤原 直樹, 柴田 泰夫, 八坂 洋

    電子情報通信学会技術研究報告, 107, 302, LQE2007-81, 7-10  

    発表年月: 2007年10月

  • 低RFパワー窒素プラズマを用いたInP基板上InGaAsNのMOMBE成長

    満原学, 佐藤具就, 硴塚孝明, 深野秀樹, 近藤康洋

    第68 回応用物理学会学術講演会, 7p-E-5  

    発表年月: 2007年09月

  • 周波数変調SSG-DBR-LDと光フィルタを用いた10Gbps NRZ信号の生成とその伝送特性

    硴塚孝明, 松尾慎治, 瀬川徹, 鈴木博之, 藤原直樹, 柴田泰夫, 八坂洋

    第68 回応用物理学会学術講演会, 6a-C-5  

    発表年月: 2007年09月

  • 半導体二重リング共振器を用いた光パケットスイッチ用波長可変レーザ

    瀬川 徹, 松尾 慎治, 硴塚 孝明, 佐藤 具就, 近藤 康洋, 鈴木 博之

    電子情報通信学会技術研究報告, 107, 199, LQE2007-51  

    発表年月: 2007年08月

  • 周波数変調型SSG-DBRレーザと波長フィルタを用いた送信素子

    松尾 慎治, 硴塚 孝明, 瀬川 徹, 藤原 直樹, 柴田 泰夫, 八坂 洋, 鈴木 博之

    2007 年電子情報通信学会ソサイエティ大会, C-4-14  

    発表年月: 2007年08月

  • InPモノリシック集積型光スイッチング用波長可変レーザ

    硴塚孝明  [招待有り]

    第10 回計測フロンティア研究部門公開セミナー「デバイス計測シンポジウム〜半導体・無線・光通信技術と計測技術〜」  

    発表年月: 2007年07月

  • Optical Polarization in Columnar InAs/GaAs Quantum Dots: Effect of Piezoelectricity

    斎藤敏夫, 硴塚孝明, 江部広治, 菅原 充, 荒川泰彦

    ナノ光・電子デバイスと量子情報エレクトロニクス, P-14  

    発表年月: 2007年03月

  • Numerical Analysis of Quantum Dot Lasers: Effect of Wavelength Detuning

    硴塚孝明, 斎藤敏夫, 荒川泰彦

    ナノ光・電子デバイスと量子情報エレクトロニクス, P-9  

    発表年月: 2007年03月

  • MOVPE成長したInP基板上InAs/InGaAs多重量子井戸レーザ

    佐藤具就, 満原学, 硴塚孝明, 近藤康洋  [招待有り]

    第54 回応用物理学関係連合学術講演会, 29p-Q-1  

    発表年月: 2007年03月

  • InAs/GaAsコラム型量子ドットの偏光特性の理論解析(2)

    斎藤敏夫, 硴塚孝明, 江部広治, 菅原充, 荒川泰彦

    第54 回応用物理学関係連合学術講演会, 29a-Q-3  

    発表年月: 2007年03月

  • 半導体リング共振器を用いた波長可変レーザの低電流駆動Full C-band動作

    瀬川徹, 松尾慎治, 硴塚孝明, 佐藤具就, 近藤康洋, 鈴木博之

    第54回応用物理学関係連合学術講演会, 28p-SG-18  

    発表年月: 2007年03月

  • InAs/GaAsコラム型量子ドットの偏光特性の理論解析;積層数依存性

    斎藤敏夫, 硴塚孝明, 江部広治, 菅原充, 荒川泰彦

    第67回応用物理学会学術講演会, 31p-ZF-20  

    発表年月: 2006年08月

  • 自己形成量子ドットレーザにおける離調の効果の数値解析

    硴塚孝明, 斎藤敏夫, 荒川泰彦

    第67回応用物理学会学術講演会, 30a-ZT-10  

    発表年月: 2006年08月

  • InAs/GaAsコラム型量子ドットの偏光特性の積層数依存性

    斎藤敏夫, 硴塚孝明, 江部広治, 菅原充, 荒川泰彦

    ナノ光電子デバイスシンポジウム "量子ドットとフォトニック結晶", P-47  

    発表年月: 2006年05月

  • 自己形成量子ドットレーザにおける離調の効果

    硴塚孝明, 斎藤敏夫, 荒川泰彦

    ナノ光電子デバイスシンポジウム "量子ドットとフォトニック結晶", P-49  

    発表年月: 2006年05月

  • InP基板上InGaAsN薄膜のMOMBE成長

    満原学, 佐藤具就, 硴塚孝明, 渡辺孝夫, 近藤康洋

    第53 回応用物理学関係連合講演会, 24p-P-6  

    発表年月: 2006年03月

  • チャーピングしたラダーフィルタを有する波長可変レーザの広帯域化

    硴塚孝明, 鄭錫煥, 松尾慎治, 吉國裕三, 鈴木博之

    第53 回応用物理学関係連合講演会, 23a-ZN-8  

    発表年月: 2006年03月

  • 自己形成量子ドットにおける線幅増大係数の低減に向けた検討

    硴塚孝明, 斎藤敏夫, 荒川泰彦

    第66回応用物理学会学術講演会, 10p-W-3  

    発表年月: 2005年09月

  • InAs/GaAsコラム型積層量子ドットの偏波制御理論

    斎藤敏夫, 中岡俊裕, 硴塚孝明, 江部広治, 菅原充, 荒川泰彦

    応用物理学会関西支部セミナー「光物性とその応用」  

    発表年月: 2005年02月

  • VFFモデルによる閃亜鉛鉱型窒化物混晶における非混和領域の解析

    硴塚孝明, 斎藤敏夫, 吉國裕三, 荒川泰彦

    第65回応用物理学会学術講演会, 10p-W-3  

    発表年月: 2004年09月

  • InAs/GaAs積層量子ドットの光学的特性に関する理論解析

    斎藤敏夫, 中岡俊裕, 硴塚孝明, 吉國裕三, 荒川泰彦

    第65回応用物理学会学術講演会, 2p-ZK-11  

    発表年月: 2004年09月

  • ウルツ鉱型InNの光学吸収特性の温度依存性

    松岡隆志, 岡本浩, 硴塚孝明, 牧本俊樹

    第65回応用物理学会学術講演会, 3a-W-10  

    発表年月: 2004年09月

  • 歪緩和層の導入によるInAs量子ドットのg因子の制御

    中岡俊裕, 館林潤, 斎藤敏夫, 硴塚孝明, 宮澤俊之, 廣瀬真, 臼杵達哉, 横山直樹, 荒川泰彦

    第65回応用物理学会学術講演会, 3p-ZK-3  

    発表年月: 2004年09月

  • InAs/GaAs積層量子ドットの電子構造の理論計算

    斎藤敏夫, 中岡俊裕, 硴塚孝明, 吉國裕三, 荒川泰彦

    合同成果報告シンポジウム-フォトニック結晶と量子ドット, P-9  

    発表年月: 2004年04月

  • 高速変調動作に向けた自己形成量子ドットレーザの数値解析

    硴塚孝明, 斎藤敏夫, 吉國裕三, 荒川泰彦

    合同成果報告シンポジウム-フォトニック結晶と量子ドット, P-16  

    発表年月: 2004年04月

  • 量子ドット内へのキャリア捕獲過程モデルの検討:レーザの変調速度に対する効果

    硴塚孝明, 斎藤敏夫, 吉國裕三, 荒川泰彦

    第51回応用物理学関係連合講演会, 28p-ZB-6  

    発表年月: 2004年03月

  • InAs/GaAs積層量子ドットの歪分布と電子構造(II)

    斎藤敏夫, 中岡俊裕, 硴塚孝明, 吉國裕三, 荒川泰彦

    第51回応用物理学関係連合講演会, 28p-ZB-9  

    発表年月: 2004年03月

  • 自己形成量子ドットレーザにおける変調特性の数値解析:非線形利得と不均一広がりの効果

    硴塚孝明, 斎藤敏夫, 吉國裕三, 菅原充, 荒川泰彦

    第64回応用物理学会学術講演会, 31p-YC-7  

    発表年月: 2003年09月

  • InAs/GaAs積層量子ドットの歪分布と電子構造

    斎藤敏夫, 中岡俊裕, 硴塚孝明, 吉國裕三, 荒川泰彦

    第64回応用物理学会学術講演会, 1p-ZF-12  

    発表年月: 2003年09月

  • モードホップフリー分布反射型 (DBR) レーザの波長切替特性

    藤原 直樹, 石川 光映, 狩野 文良, 硴塚 孝明, 川口 悦弘, 吉國 裕三, 東盛 裕一

    2003年電子情報通信学会ソサエティ大会, C-4-6  

    発表年月: 2003年09月

  • 波長選択型モードホップフリー DBR レーザアレイ

    藤原 直樹, 硴塚 孝明, 岡本 浩, 川口 悦弘, 近藤 康洋, 吉國 裕三, 東盛 裕一

    電子情報通信学会技術研究報告, OPE2003-33, 47-59  

    発表年月: 2003年07月

  • モードホップフリー分布反射型 (DBR) レーザの波長可変特性

    藤原 直樹, 硴塚 孝明, 岡本 浩, 川口 悦弘, 近藤 康洋, 吉國 裕三, 東盛 裕一

    2003年電子情報通信学会総合大会 C-4-20  

    発表年月: 2003年03月

  • マイクロマシン構造に埋め込んだInGaAs量子ドットの顕微分光測定

    中岡俊裕, 硴塚孝明, 斎藤敏夫, 加古敏, 石田悟己, 西岡政雄, 荒川泰彦

    第50回応用物理学関係連合講演会, 29p-ZE-1  

    発表年月: 2003年03月

  • 歪バルク半導体光増幅器における埋込みによる歪緩和の効果

    硴塚 孝明, 柴田 泰夫, 伊東 雅之, 門田 好晃, 東盛 裕一, 吉國 裕三

    電子情報通信学会技術研究報告, LQE2002-17, 65-68  

    発表年月: 2002年05月

  • 窒化物半導体量子ドットレーザにおける閾値電流の低減効果

    硴塚孝明, 荒川泰彦, 吉國裕三

    第49回応用物理学関係連合講演会, 28a-YH-4  

    発表年月: 2002年03月

  • 埋込み構造がバルク半導体光増幅器の偏波特性に与える効果

    硴塚孝明, 柴田泰夫, 伊東雅之, 門田好晃, 東盛裕一, 吉國裕三

    第62回応用物理学会学術講演会, 13a-B-1  

    発表年月: 2001年09月

  • 歪バルクSOAにおける利得の偏波特性解析

    硴塚孝明, 柴田泰夫, 伊東雅之, 門田好見, 吉國裕三

    第61回応用物理学会学術講演会, 7p-R-6  

    発表年月: 2000年09月

  • 偏波無依存歪バルク半導体光増幅器の歪み量依存性

    伊東雅之, 柴田泰夫, 硴塚孝明, 門田好晃, 東盛裕一

    第61回応用物理学会学術講演会, 7p-R-7  

    発表年月: 2000年09月

  • 長波系半導体材料における価電子帯吸収の温度依存性の解析(II)

    硴塚孝明, 山中孝之, 関俊司, 吉國裕三

    第60回応用物理学会学術講演会, 3a-ZE-28  

    発表年月: 1999年09月

  • WDM光リングネットワークおけるフェアネスの検討

    関 俊司, 硴塚 孝明, 廣野 卓夫, ルイ ウェイン, 吉國 裕三

    1999 年電子情報通信学会ソサイエティ大会, B-7-32  

    発表年月: 1999年08月

  • 長波系半導体材料における価電子帯吸収の温度依存性の解析

    硴塚孝明, 山中孝之, 関俊司

    第46回応用物理学関係連合講演会, 28a-B-5  

    発表年月: 1999年03月

  • バルクInGaAsPにおける価電子帯間吸収の解析

    硴塚孝明, 山中孝之, 吉國裕三, 横山清行, 関俊司

    第59回応用物理学会学術講演会, 16p-T-16  

    発表年月: 1998年09月

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特定課題研究

  • 大規模光集積回路における半導体レーザの発振モード安定化の研究

    2020年  

     概要を見る

    ネットワークの通信トラフィック量が増大を続けており、光データ通信の更なる大容量化に向けてシリコン基板上のアレイ光源集積が期待されている。一方、高密度集積に向けては光回路内の光反射による半導体レーザの発振モードの不安定化が課題である。本研究では、シリコン基板上集積半導体レーザの反射耐性向上をめざしたメンブレンレーザを検討した。高結合係数を有する分布帰還型(DFB)活性層領域と分布ブラッグ反射器(DBR)領域の組み合わせにより、活性層のキャリア揺らぎの影響を抑制する共振器構造を設計し、実効線幅増大係数の低減によって、DFB構造に対し反射耐性を約18 dB改善できることを数値解析により明らかにした。

 

現在担当している科目

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委員歴

  • 2019年06月
    -
    継続中

    電子情報通信学会 レーザ・量子エレクトロニクス研究会 (LQE)  専門委員

  • 2021年06月
    -
    2022年06月

    電子情報通信学会 エレクトロニクスソサイエティ  大会運営幹事

  • 2013年01月
    -
    2014年12月

    IEEE東京支部  Fellow Nomination Committee Secretary

  • 2013年01月
    -
    2013年12月

    IEEE Photonics Society Japan Chapter  Secretary

  • 2013年
    -
     

    CLEO-PR/OECC/PS 2013  Program Committee

  • 2013年
    -
     

    IPRM 2013  Organization Committee (Publication)

  • 2013年
    -
     

    Microoptics Conference 2013  Program Committee

  • 2012年01月
    -
    2012年12月

    IEEE Photonics Society Japan Chapter  Treasurer

  • 2008年01月
    -
    2009年06月

    光産業技術振興協会  技術動向調査委員

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