Details of a Researcher - YANAGITANI, Takahiko

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YANAGITANI, Takahiko

Scopus Paper Info

Paper Count: 176 Citation Count: 1411 h-index: 20

Click to view the Scopus page. The data was downloaded from Scopus API in December 20, 2024, via http://api.elsevier.com and http://www.scopus.com .

Google Scholar Information (Citations per year)

Citation Count: 1555 h-index: 19 i10-index: 46

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Scopus Information

News & Topics

2017.01.23

Eleven researchers recognized for achievements in 2016 Waseda Research Award

Affiliation

Faculty of Science and Engineering, School of Advanced Science and Engineering

Job title

Professor

Degree

博士（工学） ( 同志社大学 )

Homepage URL

https://yanagitani.w.waseda.jp/

Research Experience

2022.04

-

Now

Waseda University School of Advanced Science and Engineering Professor
2015.04

-

2022.03

Waseda University Faculty of Science and Engineering
2016.10

-

2020.03

JSTさきがけ研究員（兼任）
2012.04

-

2014.03

Nagoya Institute of Technology Assistant professor
2008.05

-

2012.03

Nagoya Institute of Technology
2008.04

-

2008.05

National Institute of Advanced Industrial Science and Technology Researcher
2007.04

-

2008.04

Tohoku University Postdoctoral Fellowships of Japan Society for the Promotion of Science
2006.04

-

2007.03

産業技術総合研究所関西産学官連携センター特別研究員

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Education Background

2003.04

-

2006.03

Doshisha University
2001.04

-

2003.03

Doshisha University
1997.04

-

2001.03

Doshisha University

Committee Memberships

2014.12

-

Now

Scientific Reports (Nature Publishing Group) Editorial Board member
2013.10

-

Now

IEEE UFFC ( IUS Technical Program Committee) IEEE IUS Technical Program Committee
2012.04

-

Now

日本音響学会誌査読委員日本音響学会誌査読委員（2012年04月-現在）
2012.04

-

Now

超音波エレクトロニクスシンポジウム運営委員論文委員（2010年04月-現在）
　

　

　

弾性波素子技術コンソーシアム幹事
　

　

　

電気情報通信学会超音波研究会専門員
　

　

　

日本学術振興会弾性波素子技術第１５０委員会委員
　

　

　

圧電材料・デバイスシンポジウム運営委員
　

　

　

EMデバイス・システムの新技術調査専門委員会幹事

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Professional Memberships

　

　

　

応用物理学会
　

　

　

IEEE

Research Areas

Applied condensed matter physics / Measurement engineering / Crystal engineering / Applied physical properties / Thin film/surface and interfacial physical properties / Mechanics and mechatronics / Robotics and intelligent system / Electron device and electronic equipment

Research Interests

BAW filter
SMR
FBAR
RF-MEMS
ScAlN
スパッタリング
イオンビーム
圧電デバイス
弾性表面波
ZnO
SAW
センサ
薄膜
配向制御

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Awards

文部科学大臣表彰

2018
早稲田大学リサーチアワード（国際研究発信力）

2016
名古屋工業大学優秀賞（教員評価）

2013.11
名古屋工業大学褒賞

2013.11
名古屋工業大学特別優秀賞（教員評価）

2013.01
粟屋潔学術奨励賞

2010.09
超音波シンポジウム奨励賞(Symposium on Ultrasonic Electronics : Young Scientist Award)

2007.11
Symposium on Ultrasonic Electronics : Young Scientist Award

2007.11

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Papers

GHz voltage amplification in stack of piezoelectric ScAlN and non-piezoelectric SiO₂ layers

S. Kinoshita, H. Kishi, K. Izumi, T. Yanagitani

Appl. Phys. Express in press 2024.10 [Refereed]

Authorship：Last author, Corresponding author

　View Summary

Abstract

GHz voltage amplification was found in a stacked structure of piezoelectric layers, such as ScAlN, and non-piezoelectric layers, such as SiO₂. This allows for large-area fabrication using commercial equipment. This approach contributes to wireless sensor activation. The electromechanical coupling coefficients k _t ² of input and output layers were 17.6% and 13.7%, respectively. An experimental open-circuit voltage gain of 4.5 (+13 dB) at 0.8 GHz was observed, with a maximum transmission loss (S₂₁) of -5 dB. The experimental result shows good agreement with the theoretical prediction simulated by electromechanical transmission line model.

DOI

Scopus
Atmospheric gas-phase catalyst etching of SiO2 for deep microfabrication using HF gas and patterned photoresist,

K-H Sano, Y. Ono, R. Tobinaga, Y. Imamura, Y. Hayashi, T. Yanagitani

ACS Appl. Mater. Interfaces 16 ( 17 ) 22657 - 22664 2024.04 [Refereed]

Authorship：Last author, Corresponding author

DOI

Scopus

1

Citation

(Scopus)
Enhanced electromechanical coupling from cation local structures in (Mg,Zn)O

J. Jia, D. Kishi, N. Bai, T. Okajima, F. Lesari, T. Yanagitani

Phys. Rev. B 134101 2024.03 [Refereed]

Authorship：Last author, Corresponding author

DOI

Scopus

1

Citation

(Scopus)
Full-epitaxial ScAlN and MgZnO solidly mounted resonators based on epitaxial acoustic Bragg reflector

S. Tokai, T. Yanagitani

Appl. Phys. Lett. 124, 082901 2024.02 [Refereed]

Authorship：Last author, Corresponding author

DOI

Scopus

1

Citation

(Scopus)
Epitaxial ZnO piezoelectric layer on SiO2/Mo solidly mounted resonator fabricated using epitaxial Au sacrificial layer

S. Tokai, T. Yanagitani

Appl. Phys. Express 17 025501 2024.02 [Refereed]

Authorship：Last author, Corresponding author

DOI

Scopus

1

Citation

(Scopus)
Bragg reflector type shear mode BAW transformer based on c-axis zig-zag ScAlN multilayer for rectifying antenna

K. Shiraiwa, T. Yanagitani

IEEE Sens. Lett. 7 ( 11 ) 2504404 2023.11 [Refereed]

Authorship：Last author, Corresponding author

DOI

Scopus
GHz fingerprint acoustic imaging by mechanically scanning a soft conductive probe on epitaxial PbTiO3 films

Y. Koike, Y. Sato, T. Yanagitani

IEEE Sens. Lett 7 ( 10 ) 2504004 2023.10 [Refereed]

Authorship：Last author, Corresponding author

DOI

Scopus
Theoretical investigation of Rayleigh surface acoustic wave propagation characteristics in c-axis-zigzag ScAlN film/silicon substrate structure

Takumi Tominaga, Shinji Takayanagi, Takahiko Yanagitani

J. Appl. Phys. 133 204502-1 - 204502-10 2023.05 [Refereed]

Authorship：Last author

DOI

Scopus

2

Citation

(Scopus)
"A method for extracting sole mechanical properties of Bragg reflector by GHz ultrasonic pulse-echo technique,"

T. Yanagitani, N. Ishii, K. Kondo, M. Suzuki

Appl. Phys. Lett., 121 ( 18 ) 182901 2022.10 [Refereed]

Authorship：Lead author, Corresponding author

DOI

Scopus

2

Citation

(Scopus)
Giga-hertz ultrasonic reflectometry for fingerprint imaging using epitaxial PbTiO4 transducers,

K. Nakamura, Y. Koike, Y. Sato, T. Yanagitani

Appl. Phys. Lett., 121 ( 17 ) 172903 2022.10 [Refereed]

Authorship：Last author, Corresponding author

DOI

Scopus

5

Citation

(Scopus)
Oblique incidence ultrasonic reflectometry device based on c-axis tilted ScAlN films for evaluating viscoelastic properties of liquids above 100 MHz

S. Kinoshita, T. Yanagitani

Appl. Phys. Lett., 121 ( 15 ) 152901 2022.09 [Refereed]

Authorship：Last author, Corresponding author

DOI

Scopus

2

Citation

(Scopus)
"Enhanced electromechanical coupling in Yb-Substituted III−V nitride alloys,"

J. Jia, N. Iwata, M. Suzuki, T. Yanagitani

ACS Appl. Electron. Mater. 4 ( 7 ) 3448 - 3456 2022.06 [Refereed]

Authorship：Last author, Corresponding author
Negative-ion bombardment increases during low-pressure sputtering deposition and their effects on the crystallinities and piezoelectric properties of scandium aluminum nitride films

T. Tominaga, S. Takayanagi, T. Yanagitani

J. Phys. D: Appl. Phys 55 105306 2021.12

Authorship：Last author
Ion-beam-induced in-plane a-axis oriented (0001) AlN and ScAlN thin film BAW resonators

【Editor's Pick】C. Masamune, T. Yanagitani

AIP Advances 11 ( 12 ) 125215 2021.12 [Refereed]

Authorship：Last author, Corresponding author
Origin of Enhanced Electromechanical Coupling in (Yb,Al)N Nitride Alloys,

J. Jia, T. Yanagitani

Phys. Rev. Appl., 16 ( 4 ) 44009 2021.10 [Refereed]

Authorship：Last author, Corresponding author
Polarization control of ScAlN, ZnO, and PbTiO3 piezoelectric films: Application to polarization inverted multilayer BAW and SAW devices

Jpn. J. Appl. Phys 60 SD0803-1 - SD0803-10 2021.07 [Refereed] [Invited]

Authorship：Lead author, Last author, Corresponding author
Bulk acoustic wave transformer based on the combination of the high-ε epitaxial PbTiO3 and low-ε ScAlN thin films

S. Kinoshita, T. Yanagitani

Appl. Phys. Lett., 118 212901 2021.05 [Refereed]

Authorship：Last author, Corresponding author
Theoretical and experimental study of shear mode bulk acoustic wave transformer based on c-axis zigzag ScAlN multilayer for rectenna application

S. Kinoshita, T. Yanagitani

Appl. Phys. Lett., 118 142903 2021.04 [Refereed]

Authorship：Last author, Corresponding author
Frequency-switchable polarity-inverted BAW resonators based on electric-field-induced piezoelectric PMN-PT/PZT epitaxial film stacks

Takahiro Shimidzu, Takahiko Yanagitani

J. Appl. Phys. 126 ( 11 ) 114104 - 114104 2019.09 [Refereed]

Authorship：Last author, Corresponding author

DOI

Scopus

7

Citation

(Scopus)
ScAlN圧電薄膜の高品質化に向けたScAl合金スパッタターゲットから発生する負イオンの抑制～電子ビーム溶融、アーク溶融、焼結ScAl合金ターゲットの比較～

柳谷隆彦

11 - 15 2019.09

Authorship：Lead author, Last author, Corresponding author
Frequency-switchable polarity-inverted BAW resonators based on PZT/PTO epitaxial films using difference in coercive field

T. Shimidzu, T. Mori, T. Yanagitani

Appl. Phys. Lett., 114 ( 21 ) 212902 - 212902 2019.05 [Refereed]

Authorship：Last author, Corresponding author

DOI

Scopus

14

Citation

(Scopus)
Rapid wave velocity measurement by Brillouin scattering using coherent phonons induced by ScAlN piezoelectric thin-film transducer,”

M. Kawabe, S. Takayanagi, H, Ichihashi, M. Suzuki, T. Yanagitani, M. Matsukawa

2018.10 [Refereed]

Authorship：Corresponding author
ScAlN thick film ultrasonic transducer in 40 MHz -80 MHz,

K-H. Sano, R. Karasawa, T. Yanagitani

IEEE Trans. Ultrason., Ferroelectr., Freq.Contr. 65 ( 11 ) 2097 - 2102 2018.10 [Refereed]

Authorship：Last author, Corresponding author
Ultrasonically-induced electrical potentials in demineralized bovine cortical bone

Shunki Mori, Taiki Makino, Daisuke Koyama, Shinji Takayanagi, Takahiko Yanagitani, Mami Matsukawa

AIP Advances 8 ( 4 ) 45007 2018.04 [Refereed]

　View Summary

While the low-intensity pulsed ultrasound technique has proved useful for healing of bone fractures, the ultrasound healing mechanism is not yet understood. To understand the initial physical effects of the ultrasound irradiation process on bone, we have studied the anisotropic piezoelectric properties of bone in the MHz range. Bone is known to be composed of collagen and hydroxyapatite (HAp) and shows strong elastic anisotropy. In this study, the effects of HAp on the piezoelectricity were investigated experimentally. To remove the HAp crystallites from the bovine cortical bone, demineralization was performed using ethylene diamine tetra-acetic acid (EDTA) solutions. To investigate the piezoelectricity, we have fabricated ultrasound transducers using the cortical bone or demineralized cortical bone. The induced electrical potentials due to the piezoelectricity were observed as the output of these transducers under pulsed ultrasound irradiation in the MHz range. The cortical bone transducer (before mineralization) showed anisotropic piezoelectric behavior. When the ultrasound irradiation was applied normal to the transducer surface, the observed induced electrical potentials had minimum values. The potential increased under off-axis ultrasound irradiation with changes in polarization. In the demineralized bone transducer case, however, the anisotropic behavior was not observed in the induced electrical potentials. These results therefore indicate that the HAp crystallites affect the piezoelectric characteristics of bone.

DOI

Scopus

8

Citation

(Scopus)
Quantitative thickness measurement of polarity-inverted piezoelectric thin-film layer by scanning nonlinear dielectric microscopy

H. Odagawa, K. Terada, Y. Tanaka, H. Nishikawa, T. Yanagitani, Y. Cho

Jpn. J. Appl. Phys. 56 ( 10 ) 10PF18 2017.10 [Refereed]

　View Summary

A quantitative measurement method for a polarity-inverted layer in ferroelectric or piezoelectric thin film is proposed. It is performed nondestructively by scanning nonlinear dielectric microscopy (SNDM). In SNDM, linear and nonlinear dielectric constants are measured using a probe that converts the variation of capacitance related to these constants into the variation of electrical oscillation frequency. In this paper, we describe a principle for determining the layer thickness and some calculation results of the output signal, which are related to the radius of the probe tip and the thickness of the inverted layer. Moreover, we derive an equation that represents the relationship between the output signal and the oscillation frequency of the probe and explain how to determine the thickness from the measured frequency. Experimental results in Sc-doped AlN piezoelectric thin films that have a polarity-inverted layer with a thickness of 1.5 mu m fabricated by radio frequency magnetron sputtering showed a fairly good value of 1.38 mu m for the thickness of the polarity-inverted layer. (C) 2017 The Japan Society of Applied Physics

DOI

Scopus
Evaluation of the acoustoelectric effect in the thickness direction of c-plane ZnO single crystals by Brillouin scattering

S. Tomita, T. Yanagitani, S. Takayanagi, H. Ichihashi, Y. Shibagaki, H. Hayashi, M. Matsukawa

J. Appl. Phys. 121 235102 2017.07 [Refereed]

Authorship：Corresponding author
Method for measuring polarity-inverted layered structure in dielectric thin films using scanning nonlinear dielectric microscopy

Hiroyuki Odagawa, Koshiro Terada, Hiroaki Nishikawa, Takahiko Yanagitani, Yasuo Cho

Ferroelectrics 498 ( 1 ) 47 - 51 2016.07 [Refereed]

　View Summary

A method for obtaining a depth profile of polarity inverted structure in a layered ferroelectric and/or piezoelectric thin film is proposed. It is performed by surface measurement non-destructively using scanning nonlinear dielectric microscopy. We describe estimation principle for the depth profile with some calculation results of measurement signal, which is related to tip radius of the measurement probe and depth of the inverted layer. Also, experimental results in zinc oxide films which have layered polarity-inverted structure fabricated by radio frequency magnetron sputtering and the estimation of the polarity state on the films are shown.

DOI

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1

Citation

(Scopus)
Acoustic-Wave Velocities and Refractive Indices in an m-Plane GaN Single-Crystal Plate and c-Axis-Oriented ScAlN Films Measured by Brillouin Scattering Techniques

Hayato Ichihashi, Takahiko Yanagitani, Masashi Suzuki, Shinji Takayanagi, Masahiko Kawabe, Shota Tomita, Mami Matsukawa

IEEE Trans. Ultrason., Ferroelectr., Freq.Contr. 63 ( 5 ) 717 - 725 2016.05 [Refereed] [Invited]

Authorship：Corresponding author

　View Summary

We have experimentally investigated wave velocities and refractive indices in bulk and film samples [a GaN single-crystal plate and c-axis-oriented ScxAl(1-x)N (x = 0.00 - 0.63) films] by Brillouin scattering (BRS). All of the piezoelectrically unstiffened elastic constants and the ordinary refractive index of the GaN single-crystal plate were determined from the reflection-induced Theta A(RI Theta A) scattering geometry and the combination of 90R and 180 degrees scattering geometries. The uncertainties of the measured wave velocities were approximately 0.17% (RI Theta A) and 2.5% (combination technique). In addition, the longitudinal-wave velocities of ScxAl(1-x)N films propagating in the normal direction were obtained by the combination technique. The maximum uncertainty was approximately 3.3%. The shear-wave velocities and refractive indices of ScxAl(1-x)N films were also investigated by the 90R scattering geometry using velocities measured by high-overtone bulk acoustic resonators. The softening trends of the elasticity were obtained from the measured longitudinal-and shear-wave velocities, although there were large uncertainties in the Brillouin measurement system owing to thermal instability.

DOI

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10

Citation

(Scopus)
Effect of anisotropy on stress-induced electrical potentials in bovine bone using ultrasound irradiation

S. Matsukawa, T. Makino, S. Mori, D. Koyama, S. Takayanagi, K. Mizuno, T. Yanagitani, M. Matsukawa

Appl. Phys. Lett. 110 ( 14 ) 143701 2016.04 [Refereed]

　View Summary

The bone fracture healing mechanism of the low-intensity pulsed ultrasound technique is not yet clearly understood. In our previous study, the electrical potentials induced in bone were successfully measured by focusing on piezoelectricity in the MHz range. Bone is composed of collagen and hydroxyapatite and has strong anisotropy. The purpose of this study is to investigate the effects of bone anisotropy on the electrical potentials induced by ultrasound irradiation. For this study, ultrasound bone transducers were fabricated using cortical bovine bone plates as piezoelectric devices. An ultrasound of 7.4 kPa(peak-peak) (i.e., the peak-to-peak pressure value) was used to irradiate the side surface of each bone plate. Electrical potentials induced in the bone plate were then measured by varying the wave propagation direction in the plate. The peak-to-peak values of these ultrasonically induced electrical potentials were found to vary with changes in the ultrasound propagation direction in the bone sample. The potential was maximized at an inclination of approximately 45 degrees to the bone axis but was minimized around the three orthogonal directions. These maxima and minima ranged from 28 to 33 mu Vpeak-peak and from 5 to 12 mu Vpeak-peak, respectively. Additionally, our ultrasound results indicated a change in polarity due to bone anisotropy in the MHz range. Published by AIP Publishing.

DOI

Scopus

12

Citation

(Scopus)
Gigahertz Acoustic Wave Velocity Measurement in GaN Single Crystals Considering Acousto-Electric Effect

Hayato Ichihashi, Takahiko Yanagitani, Shinji Takayanagi, Masahiko Kawabe, Mami Matsukawa

IEEE Trans. Ultrason., Ferroelectr., Freq. Contr. 61 ( 8 ) 1307 - 1313 2015.08 [Refereed] [Invited]

　View Summary

The resistivity-frequency characteristics of longitudinal wave velocities propagating parallel to the c-axis in a GaN single crystal were theoretically estimated by considering the piezoelectric acousto-electric effect. The temperature and frequency dependences of longitudinal and shear wave velocities in conductive and semiconductive GaN single-crystal samples were experimentally investigated by Brillouin scattering. The temperature dependence of longitudinal and shear wave velocities had a linear tendency in the conductive sample, whereas in the semiconductive sample, those had a similar tendency to the predicted velocity changes resulting from the piezoelectric stiffening effect. However, the temperature dependence of shear wave velocity, which does not possess piezoelectric coupling, had a tendency similar to that of the longitudinal wave in the semiconductive sample, unexpectedly. The frequency dependence of longitudinal wave velocities in the semiconductive sample had a tendency similar to the predicted velocity changes resulting from the piezoelectric stiffening effect.

DOI

Scopus

5

Citation

(Scopus)
High-T-c/high-coupling relaxed PZT-based single crystal thin films

K. Wasa, T. Matsushima, H. Adachi, T. Matsunaga, T. Yanagitani, T. Yamamoto

J. Appl. Phys. 117 ( 12 ) 124106 2015.03 [Refereed]

　View Summary

Pb(Zr,Ti)O-3 (PZT)-based ferroelectric ceramics exhibit high piezoelectricity, however, their Curie temperature (T-c) values are not so high, i.e., T-c<400 degrees C. PZT-based piezoelectric thin films with higher T-c would be beneficial for improved micro actuators, sensors, memories, and piezoelectric micro-electro mechanical systems. In-plane biaxial strained PZT thin films in a laminated composite structure are known to exhibit enhanced T-c; however, the thickness of PZT-based thin films is limited to below a critical thickness typically <50 nm. The T-c of relaxed PZT-based thin films with thicknesses greater than the critical thickness is the same as bulk T-c. However, a sort of relaxed PZT-based single-crystal thin films exhibit extraordinary high T-c, T-c = similar to 600 degrees C. In addition, the films show extremely low dielectric constant, epsilon/epsilon(o) similar to 100 with high coupling factor, k(t) similar to 0.7, and large remnant polarization, P-r similar to 100 mu C/cm(2). These exotic properties would result from the single-domain/single-crystal structure. The enhanced T-c is possibly caused by the highly stable interface between the PZT-based thin films and substrates. Their ferroelectric performances are beyond those of conventional PZT. The high-T-c/high-coupling performances are demonstrated, and the possible mechanisms of the high T-c behavior in relaxed PZT-based single-crystal thin films are discussed. (C) 2015 AIP Publishing LLC.

DOI

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12

Citation

(Scopus)
Effects of microstructure and water on the electrical potentials in bone induced by ultrasound irradiation

H. Tsuneda, S. Matsukawa, S. Takayanagi, K. Mizuno, T. Yanagitani, M. Matsukawa

Appl. Phys. Lett. 106 ( 7 ) 73704 2015.02 [Refereed]

　View Summary

The healing mechanism of bone fractures by low intensity pulse ultrasound is yet to be fully understood. There have been many discussions regarding how the high frequency dynamic stress can stimulate numerous cell types through various pathways. As one possible initial process of this mechanism, we focus on the piezoelectricity of bone and demonstrate that bone can generate electrical potentials by ultrasound irradiation in the MHz range. We have fabricated ultrasonic bone transducers using bovine cortical bone as the piezoelectric device. The ultrasonically induced electrical potentials in the transducers change as a function of time during immersed ultrasonic pulse measurements and become stable when the bone is fully wet. In addition, the magnitude of the induced electrical potentials changes owing to the microstructure in the cortical bone. The potentials of transducers with haversian structure bone are higher than those of plexiform structure bone, which informs about the effects of bone microstructure on the piezoelectricity. (C) 2015 AIP Publishing LLC.

DOI

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18

Citation

(Scopus)
Electromechanical coupling and gigahertz elastic properties of ScAlN films near phase boundary

T. Yanagitani, M. Suzuki

Appl. Phys. Lett. 105 ( 12 ) 122907 2014.09 [Refereed]

Authorship：Lead author, Corresponding author

　View Summary

The electromechanical coupling, elastic properties, and temperature coefficient of elastic constant c(33)(D) of ScxAl(1-x)N films with high Sc concentration (x) of 0-0.70 were experimentally investigated. Near the phase boundary, a Sc0.41Al0.59N film exhibited a maximum thickness extensional mode electromechanical coupling coefficient k(t)(2) of 12% (k(t) = 0.35), which is almost double the value of 6.4% for typical pure AlN films. In the region of 0 < x < 0.2, the electromechanical coupling was confirmed to increase without any detectable deterioration in the temperature stability of c(33)(D) (= -54.5 ppm/ degrees C). This region is favorable in terms of temperature stability and is suitable for wideband resonator filter applications. (C) 2014 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.

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121

Citation

(Scopus)
Polarity-inverted ScAlN film growth by ion beam irradiation and application to overtone acoustic wave (000-1)/(0001) film resonators

M. Suzuki, T. Yanagitani, H. Odagawa

Appl. Phys. Lett. 104 ( 17 ) 172905-1 - 172905-4 2014.04 [Refereed]

Authorship：Corresponding author

　View Summary

Polarity inversion in wurtzite film is generally achieved by the epitaxial growth on a specific under-layer. We demonstrate polarity inversion of c-axis oriented ScAlN films by substrate ion beam irradiation without using buffer layer. Substrate ion beam irradiation was induced by either sputtering a small amount of oxide (as a negative ion source) onto the cathode or by applying a RF bias to the substrate. Polarity of the films was determined by a press test and nonlinear dielectric measurement. Second overtone thickness extensional mode acoustic resonance and suppression of fundamental mode resonance, indicating complete polarity inversion, were clearly observed in bilayer highly oriented (000-1)/(0001) ScAlN film. (C) 2014 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.

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41

Citation

(Scopus)
Enhanced piezoelectricity in YbGaN films near phase boundary

T. Yanagitani, M. Suzuki

Appl. Phys. Lett. 104 ( 8 ) 082911-1 - 082911-4 2014.02 [Refereed]

Authorship：Lead author, Corresponding author

　View Summary

Weak piezoelectricity in GaN is a problem in bulk acoustic wave filters and heterostructure field-effect transistors. In this study, enhancement of piezoelectricity in c-axis direction by substituting Yb for Ga was experimentally demonstrated. Thickness extensional mode electromechanical coupling coefficient k(t) for the YbxGa1-xN films increases with the Yb concentration from x = 0 to 0.3. Yb0.30Ga0.70N film near the phase boundary exhibited a maximum k(t) of 3.1%, which is approximately 2.5 times larger than that for a pure GaN. (C) 2014 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.

DOI

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32

Citation

(Scopus)
Significant shear mode softening in a c-axis tilt nanostructured hexagonal thin film induced by a self-shadowing effect

T. Yanagitani, M. Suzuki

Scripta mater. 69 ( 10 ) 724 - 727 2013.11 [Refereed]

Authorship：Lead author, Corresponding author

　View Summary

The mechanical properties of tilted AlN fiber structure caused by self-shadowing are investigated using gigahertz vibration induced through the piezoelectricity of AlN itself. We observed significant shear elastic softening in a highly tilted fiber nanostructure, but only a slight decrease in compressive elasticity. Abnormal 1/4 wavelength thickness mode resonance, indicating the decrease in the shear acoustic wave velocity, is reproducibly observed. We attribute this phenomenon to the weak fiber-to-fiber connection seen in a cross-sectional scanning electron microscopy image. (C) 2013 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

DOI

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9

Citation

(Scopus)
Electrical potentials in bone induced by ultrasound irradiation in the megahertz range

M. Okino, S. Coutelou, K. Mizuno, T. Yanagitani, M. Matsukawa

Appl. Phys. Lett. 103 ( 10 ) 103701-1 - 103701-4 2013.09 [Refereed]

　View Summary

Low frequency mechanical studies have reported the contribution of stress-induced electrical potentials to bone metabolism. However, the healing mechanism of bone fractures by low intensity ultrasound is not yet clear. We demonstrate that bone can generate electrical potentials by ultrasound irradiation in the MHz range. Electrical potentials were obtained from the output of bovine cortical bone transducers. In the range of 0.7-2.5 MHz, sensitivities of bone transducers were around 1/1000 of a poly (vinylidene fluoride) ultrasonic transducer and did not depend on magnitude and alignment of hydroxyapatite crystallites in bone. (C) 2013 AIP Publishing LLC.

DOI

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27

Citation

(Scopus)
A method for predicting thickness of the unoriented layer in ZnO film using piezoelectricity distribution in depth direction

S. Takayanagi, T. Yanagitani, M. Matsukawa

J. Phys. D: Appl. Phys. 46 ( 31 ) 315305-1 - 315305-5 2013.08 [Refereed]

　View Summary

The crystalline orientation of thin films gradually improves as the growth proceeds. Especially in the non-epitaxial growth, its initial layer is often unoriented. Because the unoriented layer degrades the performance of the device, the degree of crystalline orientation in depth direction is a very important issue. We propose a non-destructive method for predicting the thickness of the unoriented layer, making use of piezoelectricity distribution of films. An electromechanical resonator consisting of the single highly oriented layer excites a fundamental mode, but does not excite a second-overtone mode. The unoriented layer, on the other hand, exhibits little piezoelectric effect. A bilayer resonator consisting of the highly oriented layer on the unoriented layer excites a second-overtone mode because of the deference of piezoelectricity in these layers. In this study, the electromechanical resonance characteristics of Cu/ZnO(0 0 0 1)/Ti(0 0 0 1)/SiO2, Cu/ZnO(0 0 0 1)/AZO(0 0 0 1)/Ti(0 0 0 1)/ SiO2 and Cu/ZnO(1 1 (2) over bar 0)/Al/SiO2 were experimentally observed. These results were compared with the theoretical estimations by a mechanical transmission line model to determine the thicknesses of the piezoelectrically inactive layers in the (0 0 0 1) or (1 1 (2) over bar 0) oriented ZnO films. The inactive layer thickness in the (1 1 (2) over bar 0) oriented ZnO film was in good agreement with the unoriented layer thickness observed by the cross-sectional transmission electron microscopy and electron diffraction.

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4

Citation

(Scopus)
Effect of metal mode and oxide mode on unusual c-axis parallel oriented ZnO film growth on Al/glass substrate in a reactive magnetron sputtering of Zn target

S. Takayanagi, T. Yanagitani, M. Matsukawa

J. Cryst. Growth 363 22 - 24 2013.07 [Refereed]

Authorship：Corresponding author

　View Summary

(112̄0) oriented ZnO films where the c-axis is parallel to a substrate are good candidates for acoustic shear wave devices and sensors. Although ZnO film has tendency to develop c-axis normal (0001) orientation, unusual (112̄0) orientation appears in the situation that energetic oxygen ions generated from a target surface bombard the substrate during film growth in a reactive sputtering. The flux and the energy of these ions depend on the transition between the metal mode and the oxide mode on the Zn metal target surface. Here, the effect of the target surface condition on the development of unusual (112̄0) orientation is investigated. The higher crystalline (112̄0) orientation appeared in the oxide mode, probably because a large amount of energetic oxygen ions generated by the oxidized part of the Zn target. © 2012 Elsevier B.V. All rights reserved.

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7

Citation

(Scopus)
High-performance brillouin spectroscopy of phonons induced by a piezoelectric thin film with a coaxial microwave resonator

H. Sano, T. Yanagitani, S. Takayanagi, T. Sugimoto, M. Matsukawa

IEEE Trans. Ultrason., Ferroelectr., Freq. Contr. 60 ( 5 ) 873 - 876 2013.07 [Refereed]

Authorship：Corresponding author

　View Summary

To overcome the low accuracy of acoustic velocity measurements based on Brillouin scattering from thermal phonons, we attempted to utilize induced coherent phonons, which cause intense Brillouin scattering. A ZnO piezoelectric film was used to induce gigahertz-range coherent phonons in a silica glass block sample. An evanescent electromagnetic wave leaked from a coaxial resonator was applied into the film to excite phonons. The scattered light obtained using this simple system was much more intense than that obtained from thermal phonons. This technique will improve the accuracy and reduce the measurement time. © 1986-2012 IEEE.

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4

Citation

(Scopus)
Wideband Multimode Transducer Consisting of c-Axis Tilted ZnO/c-Axis Normal ZnO Multilayer

Shinji Takayanagi, Takahiko Yanagitani, Mami Matsukawa

Jpn. J. Appl. Phys. 51 ( 7 ) 07GC08 2012.07 [Refereed]

　View Summary

Wideband ultrasonic transducers are required for acoustic imaging and nondestructive evaluation. In this study, we have fabricated transducer consisting of c-axis tilted ZnO/c-axis normal ZnO multilayer on the Au(111)/Ti/silica glass substrate. We have investigated the crystalline orientations and frequency characteristics of the multilayer transducer. An X-ray diffraction analysis and a scanning electron microscopy analysis of the transducer revealed that the c-axis normal ZnO layer was grown on the Au(111) layer during the initial stage of ZnO layer deposition. As ZnO grain growth proceeded, c-axis normal growth change to the c-axis tilted ZnO layer growth. This multilayer transducer excited second-overtone modes of longitudinal and shear waves as well as the fundamental mode in the UHF range. Therefore, the frequency bandwidth of the multilayer transducer was broader than that of a single layer transducer consisting of a c-axis tilted ZnO layer. (C) 2012 The Japan Society of Applied Physics

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20

Citation

(Scopus)
Texture modification of wurtzite piezoelectric films by ion beam irradiation

T. Yanagitani, M. Kiuchi

Surf. Coat. Technol 206 ( 5 ) 816 - 819 2011.11 [Refereed]

Authorship：Lead author, Corresponding author

　View Summary

Texture modification of wurtzite films in ion beam assisted deposition was investigated. Unusual (1110) texture formation appeared in the ZnO and AlN films prepared by grazing ion beam sputtering. Such a (1110) texture formation was also observed even in the ZnO film deposited under argon ion beam irradiation. Mechanism of the formation probably relates to physical interaction between energetic particle irradiation and wurtzite structure, for example, sputtering, collision etc. Pole figure analysis and SEM image revealed that crystal grains in the films have strong out-of plane and in-plane orientation (have biaxial texture) and in-plane c-axis direction corresponds to incident ion beam direction. (C) 2011 Elsevier B.V. All rights reserved.

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8

Citation

(Scopus)
Three-Dimensional Anisotropy of Ultrasonic Wave Velocity in Bovine Cortical Bone: Effects of Hydroxyapatite Crystallites Orientation and Microstructure

Tomohiro Nakatsuji, Kazufumi Yamamoto, Daisuke Suga, Takahiko Yanagitani, Mami Matsukawa, Kaoru Yamazaki, Yukihiro Matsuyama

Jpn. J. Appl. Phys. 50 ( 7 ) 07HF18-1 - 07HF18-6 2011.07 [Refereed]

　View Summary

The three-dimensional anisotropy of longitudinal wave velocity and the hydroxyapatite (HAp) crystallites orientation in bovine cortical bone were experimentally investigated in detail. Bovine cortical bone has two typical microstructures, plexiform and haversian. Two spherical specimens (diameter: 9 mm) were obtained from the anterior (plexiform) and posterior (haversian) parts of a 30-month-old bovine femur. The three-dimensional anisotropy of longitudinal wave velocity was measured using a conventional ultrasonic pulse system by rotating the spherical specimen in the axial-tangential (A-T), axial-radial (A-R), and radial-tangential (R-T) planes. The velocity clearly changed depending on the propagation direction in all the planes. In the A-T and A-R planes, the direction of the highest velocity was slightly inclined from the bone axis direction. Moreover, the results from the X-ray pole figure analysis indicated that there were small tilts in the HAp crystallites orientation. The tilts were similar to those of the highest velocity direction and there were good correlations between velocity and HAp crystallites orientation. However, a comparatively low correlation was found in the posterior part, which shows the stronger effects of bone microstructure. On the other hand, in the R-T plane, where small HAp crystallites oriented, a weak velocity anisotropy was found owing to the bone microstructure. Ultrasonic wave velocities depended on both HAp crystallites orientation and microstructure. The degrees of contribution of these factors varied owing to the position and propagation direction. (C) 2011 The Japan Society of Applied Physics

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13

Citation

(Scopus)
Observation of Induced Longitudinal and Shear Acoustic Phonons by Brillouin Scattering

Taisuke Yoshida, Mami Matsukawa, Takahiko Yanagitani

IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL 58 ( 6 ) 1255 - 1260 2011.06 [Refereed]

　View Summary

To improve the accuracy of velocity measurements in the Brillouin scattering technique using weak thermal phonons, we have used induced coherent phonons, which intensify the scattering. To induce phonons in the gigahertz range, we used a c-axis tilted ZnO film transducer that was developed in our laboratory. This allowed us to induce longitudinal and shear acoustic phonons effectively at hypersonic frequencies. As a result, we obtained scattered light in the silica glass sample that was much more intense than that obtained from the thermal phonons. Because the Brillouin scattering from induced phonons was measured, the shift frequency was that of the electric signal applied to the ZnO transducer. Strong peaks lead to a reduction of the measurement time. This is useful for two-dimensional mapping of thin film elasticity using Brillouin scattering. Additionally, Brillouin scattering enables the simultaneous measurement of longitudinal and shear phonon velocities in the sample plane. This opens up a potential new technique for non-destructive elasticity measurements of various materials.

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5

Citation

(Scopus)
c-Axis Zig-Zag ZnO Film Ultrasonic Transducers for Designing Longitudinal and Shear Wave Resonant Frequencies and Modes

Takahiko Yanagitani, Naoki Morisato, Shinji Takayanagi, Mami Matsukawa, Yoshiaki Watanabe

IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL 58 ( 5 ) 1062 - 1068 2011.05 [Refereed]

　View Summary

A method for designing frequencies and modes in ultrasonic transducers above the very-high-frequency (VHF) range is required for ultrasonic non-destructive evaluation and acoustic mass sensors. To obtain the desired longitudinal and shear wave conversion loss characteristics in the transducer, we propose the use of a c-axis zig-zag structure consisting of multilayered c-axis 23 degrees tilted ZnO piezoelectric films. In this structure, every layer has the same thickness, and the c-axis tilt directions in odd and even layers are symmetric with respect to the film surface normal. c-axis zig-zag crystal growth was achieved by using a SiO(2) low-temperature buffer layer. The frequency characteristics of the multilayered transducer were predicted using a transmission line model based on Mason's equivalent circuit. We experimentally demonstrated two types of transducers: those exciting longitudinal and shear waves simultaneously at the same frequency, and those exciting shear waves with suppressed longitudinal waves.

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56

Citation

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Relationships between the anisotropy of longitudinal wave velocity and hydroxyapatite crystallite orientation in bovine cortical bone

Kazufumi Yamamoto, Tomohiro Nakatsuji, Yuichiro Yaoi, Yu Yamato, Takahiko Yanagitani, Mami Matsukawa, Kaoru Yamazaki, Yukihiro Matsuyama

Ultrasonics 52 ( 3 ) 377 - 386 2011.03 [Refereed]

　View Summary

Quantitative ultrasound (QUS) is now widely used for evaluating bone in vivo, because obtained ultrasonic wave properties directly reflect the visco-elasticity. Bone tissue is composed of minerals like hydroxyapatite (HAp) and a collagen matrix. HAp crystallites orientation is thus one parameter of bone elasticity. In this study, we experimentally investigated the anisotropy of ultrasonic wave velocity and the HAp crystallites orientation in the axial-radial and axial-tangential planes in detail, using cylindrical specimens obtained from the cortical bone of three bovine femurs. Longitudinal bulk wave propagation was investigated by using a conventional ultrasonic pulse system. We used the one cycle of sinusoidal pulse which was emitted from wide band transmitter. The nominal frequency of the pulse was 1 MHz. First, we investigated the anisotropy of longitudinal wave velocity, measuring the anisotropy of velocity in two planes using cylindrical specimens obtained from identical bone areas. The wave velocity changed due to the rotation angle, showing the maximum value in the direction a little off the bone axis. Moreover, X-ray pole figure measurements also indicated that there were small tilts in the HAp crystallites orientation from the bone axis. The tilt angles were similar to those of the highest velocity direction. There were good correlations between velocity and HAp crystallites orientation obtained in different directions. However, a comparatively low correlation was found in posterior bone areas, which shows the stronger effects of bone microstructure. In the radial-tangential plane, where the HAp crystallites hardly ever align, weak anisotropy of velocity was found which seemed to depend on the bone microstructure. (C) 2011 Elsevier B.V. All rights reserved.

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8

Citation

(Scopus)
Unusual growth of polycrystalline oxide film induced by negative ion bombardment in the capacitively coupled plasma deposition

S. Takayanagi, T. Yanagitani, M. Matsukawa

Appl. Phys. Lett. 101 ( 23 ) 232902-1 - 232902-3 2010.12 [Refereed]

Authorship：Corresponding author

　View Summary

A polycrystalline film usually grows in its most densely packed plane parallel to the substrate plane. We demonstrated that the unusual crystalline growth can occur by using energetic negative ions generated in the magnetron capacitively coupled plasma deposition without using separated ion source. Negative ion energy and flux entering the substrate were quantitatively measured and compared with the preferential crystalline growth of unusual (11 (2) over bar0) orientation in ZnO films. Strong (11 (2) over bar0) orientation was found at the cathode erosion area where large amount of high energy negative ion of 170-250 eV was observed in low gas pressure of 0.1 Pa. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4769224]

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34

Citation

(Scopus)
A method for measuring in-plane unidirectional electrical properties in a wide band-gap semiconductor using a Brillouin scattering method

Takahiko Yanagitani, Hiroyuki Sano, Mami Matsukawa

JOURNAL OF APPLIED PHYSICS 108 ( 2 ) 024910-1 - 024910-4 2010.07 [Refereed]

　View Summary

It is difficult to measure the in-plane directional electrical properties of a crystal sample without physical contact. This paper describes the measurement of in-plane unidirectional resistivity through electromechanical coupling. The degree of coupling was determined from acoustic velocity data measured using the Brillouin scattering method. The resistivity distribution in a ZnO crystal with a resistivity of less than 1 Omega m, (common in intrinsic wide band-gap semiconductors) was clearly detected through acoustic velocity at gigahertz frequencies. The resistivity values obtained from the acoustic wave velocities showed a good correlation with standard contact electrode measurements in the resistivity range of 0.03-1 Omega m. This noncontact measurement technique should be useful for measuring the microscopic distribution of id-plane resistivity in wide band-gap semiconductors, and is a powerful tool for experiments under extreme conditions, such as high pressure and/or high temperature. (C) 2010 American Institute of Physics. [doi:10.1063/1.3448203]

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5

Citation

(Scopus)
Anisotropy of Longitudinal Wave Velocity and Hydroxyapatite Orientation in Bovine Cortical Bone

Yuichiro Yaoi, Kazufumi Yamamoto, Tomohiro Nakatsuji, Takahiko Yanagitani, Mami Matsukawa, Kaoru Yamazaki, Akira Nagano

Jpn. J. Appl. Phys. 48 ( 7 ) 07GK06-1 - 07GK06-4 2009.07 [Refereed]

　View Summary

The anisotropy of longitudinal wave velocity and the hydroxyapatite (HAp) crystallite orientation in bovine cortical bone were experimentally investigated in detail. A ring-shaped cortical bone sample was obtained from the midshaft of a 32-month-old bovine femur. Four cylindrical specimens (diameter 11 mm) were taken from the ring-shaped cortical bone specimen along the radial direction. Velocity was measured by a conventional ultrasonic pulse system, by rotating the specimen in the axial-tangential plane. The direction of the fastest wave velocity observed was inclined 5-10 degrees, from the axial direction. The HAp crystallite orientation in the specimen was also investigated by X-ray diffraction pole-figure analysis. We observed a strong intensive peak of (0002), indicating HAp crystallite c-axis alignment along the bone axis. However, the pole-figure also revealed a small tilt in the HAp crystallite orientation from the axial direction. Comparing the velocity and X-ray diffraction peak at each angle of the axial-tangential plane, a significant correlation between the velocity and the HAp orientation was observed. (C) 2009 The Japan Society of Applied Physics

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6

Citation

(Scopus)
Propagation Characteristics of Shear Horizontal Surface Acoustic Waves in (11(2)over-bar0) ZnO Film/Silica Glass Substrate Structures

Atsushi Tanaka, Takahiko Yanagitani, Marni Matsukawa, Yoshiak Watanabe

IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL 55 ( 12 ) 2709 - 2713 2008.12 [Refereed]

Authorship：Corresponding author

　View Summary

This paper presents the propagation characteristics of the shear horizontal surface acoustic wave (SH-SAW) in ZnO (0 degrees, 90 degrees, psi) (11 (2) over bar0) textured ZnO films. ZnO (0 degrees, 90 degrees, 0 degrees) film/interdigital transducer (IDT) electrode/silica glass substrate structures were fabricated by RF magnetron sputtering. Experimental results demonstrate that SH-SAW was clearly excited in these structures. We also theoretically estimated the electromechanical coupling coefficient K-2 in the ZnO (0 degrees, 90 degrees, psi) film/silica glass substrate structure. The theoretical results show that the IDT electrode/ZnO (0 degrees, 90 degrees, 55 degrees) film/silica glass substrate structure had a relatively high K-2 value of 3.4%. Moreover, the shear horizontal displacement component of the SH-SAW in this structure is much larger than the transverse and longitudinal displacement components. This structure could be used in SH-SAW sensors for evaluating the electrical properties of liquids.

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26

Citation

(Scopus)
Highly oriented ZnO thin films deposited by grazing ion-beam sputtering: Application to acoustic shear wave excitation in the GHz range

Takahiko Yanagitani, Masato Muchi

Jpn. J. Appl. Phys. 46 ( 45-49 ) L1167 - L1169 2007.12 [Refereed]

　View Summary

In-plane and out-of-plane oriented (11 (2) over bar 0) ZnO thin films are attractive for acoustic shear wave excitation in the GHz range. In this study it is proposed that highly oriented and submicron-thick (11 (2) over bar 0) ZnO thin films can be fabricated using an ion beam sputter-deposition system with grazing incidence to the substrate surface.The formation of the (I 1 0) textu.re cannot only. be attributed to the well-known i on-channeling effect or to the self-shadowing effect since the ion beam incidence direction in the system does not correspond to the ion-channeling direction of the ZnO film (the [10 (1) over bar0] or [11 (2) over bar 0] direction). The full width at half-maximum (FWHM) values of the phi- and Psi-scan profile curves of the (11 (2) over bar2) X-ray diffraction poles were measured to be 5 and 28 degrees, respectively. A shear-wave transducer with a 0.9-ltm-thick film exhibited a one-way conversion loss of less than 20 dB at 1-2 GHz and a 3 dB fractional bandwidth of 100%, without any longitudinal wave excitation.

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8

Citation

(Scopus)
Characteristics of pure-shear mode BAW resonators consisting of (11(2)over-bar0) textured ZnO films

Takahiko Yanagitani, Masato Kiuchi, Mami Matsukawa, Yoshiaki Watanabe

IEEE Trans. Ultrason., Ferroelectr., Freq. Contr. 54 ( 8 ) 1680 - 1686 2007.08 [Refereed]

　View Summary

Thickness pure-shear mode film bulk acoustic wave resonators (FBARs) made of (11 (2) over bar0) textured ZnO films have been fabricated. We also have fabricated FBAR structure consisting of two layers of the (11 (2) over bar0) textured ZnO film with opposite polarization directions. This FBAR structure operated in second overtone pure-shear mode and allowed shear-mode FBARs at higher frequency. The effective electromechanical coupling coefficients k(eff)(2) of pure- shear mode FBAR and second overtone pure-shear mode FBAR in this study were found to be 3.3% and 0.8%, respectively. The temperature coefficient of frequency (TCF) of thickness extensional mode FBAR, pure-shear mode FBAR, and second overtone pure-shear mode FBAR were measured in the temperature range of 10-60 degrees C. TCF values of -63.1 ppm/degrees C, -34.7 ppm/degrees C, and -35.6 ppm/degrees C were found for the thickness extensional mode FBAR, the pure-shear mode FBAR, and the second overtone pure-shear mode FBAR, respectively. These results demonstrated that pure-shear mode ZnO FBARs have more stable temperature characteristics than the conventional thickness extensional mode ZnO FBARs.

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38

Citation

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Control of in-plane and out-of-plane texture in shear mode piezoelectric ZnO films by ion-beam irradiation

Takahiko Yanagitani, Masato Kiuchi

J. Appl. Phys. 102 ( 4 ) 044115-1 - 044115-7 2007.08 [Refereed]

　View Summary

ZnO polycrystalline films have a strong tendency to grow their c-axis perpendicular to the film surface, even on an amorphous substrate. However, unusual (10 $(1) over bar $0) preferred orientations in which the c-axis lies in the substrate plane are often observed when the film is exposed to ion irradiation during its growth. To investigate the effect of ion irradiation on the (10 $(1) over bar $0) preferred orientation, ZnO films were fabricated using a 0-1 keV oxygen ion-beam-assisted electron-beam evaporation of zinc. The results clearly indicated that the tendency of (10 $(1) over bar $0) preferred orientation was enhanced with increasing ion energy and amount of ion irradiation. This demonstrated that the ion bombardment induced the (0001) preferred orientation to change into a (10 $(1) over bar $0) preferred orientation which corresponds to the ion channeling direction. An in-plane preferred orientation was also obtained, probably because of deviations in the incident ion-beam direction from 5 degrees to the substrate surface normal. These in-plane textured (10 $(1) over bar $0) ZnO films, fabricated under the ion-beam irradiation of 0.5-1 keV, excited a shear acoustic wave without any longitudinal wave. The highest shear mode electromechanical coupling coefficient was found to be k(15)=0.16 in the film with ion-beam irradiation of 1 keV. This k(15) value corresponds to 60% of that in a ZnO single crystal (k(15)=0.26). (c) 2007 American Institute of Physics.

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63

Citation

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Temperature characteristics of pure shear mode FBARs consisting of (112̄0) textured ZnO films

Takahiko Yanagitani, Masato Kiuchi, Mami Matsukawa, Yoshiaki Watanabe

Proc. IEEE Ultrason. Symp. 1 1459 - 1462 2006.06 [Refereed]

　View Summary

Thickness extensional mode FBAR consisting of (0001) textured ZnO films and pure thickness shear mode FBAR consisting of (112̄0) textured ZnO films were fabricated. Temperature coefficients of frequency (TCF) of these FBARs were measured in the temperature range of 10-60 °C. In both of the resonators, the parallel resonant frequencies varied linearly with temperature. The TCF were determined as -63.1 [ppm/°C] for thickness extensional mode resonator and -34.7 [ppm/°C] for pure-shear mode resonator. © 2006 IEEE.

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3

Citation

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Electromechanical coupling coefficient k15 and crystallites alignment of (11-21) textured ZnO film,”

T. Yanagitani, M. Kiuchi, M. Matsukawa, Y. Watanabe

Proc. IEEE Ultrason. Symp. 1463 - 1466 2006.06 [Refereed]
Characteristics of (10(1)over-bar1) and (11(2)over-bar0) textured ZnO piezofilms for a shear mode resonator in the VHF-UHF frequency ranges

T Yanagitani, T Nohara, M Matsukawa, Y Watanabe, T Otani

IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL 52 ( 11 ) 2140 - 2145 2005.11 [Refereed]

　View Summary

This paper reports the fabrication and characterization of ZnO piezoelectric thin films in which the crystallite c-axis is unidirectionally aligned in the plane. The films were deposited by a conventional radio frequency (RF) magnetron sputtering apparatus without epitaxy. We have measured reflection coefficient S-11 of the ZnO film/glass substrate composite shear mode resonator and confirmed that the resonator excites shear wave only in the very high frequency to ultra high frequency ranges (VHF-UHF). The crystallites c-axis orientation and alignment were determined by x-ray diffraction (XRD) patterns, phi-scan pole figure analysis, w-scan rocking curves, and atomic force microscope (AFM) measurement. The transduction of the shear wave showed good agreement with properties of the crystallite alignment in the film.

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28

Citation

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Electromechanical coupling coefficient k(15) of (11(2)over-bar0) textured ZnO films

T Yanagitani, N Mishima, M Matsukawa, Y Watanabe

Proc. IEEE Ultrason. Symp. 1824 - 1827 2005.06 [Refereed]

　View Summary

The ZnO film, whose crystallites c-axis align parallel to the substrate plane [(1120) textured ZnO films], has many potential advantages as shear-mode piezoelectric devices. In this study, shear mode electromechanical coupling coefficient k(15) of (1120) textured polycrystalline ZnO films was estimated. An over-moded resonator consists of metal electrode film/(1120) textured ZnO piezoelectric film / metal electrode film/silica glass substrate was used to characterize k(15) by a resonant spectrum method. For example, the (1120) textured ZnO piezoelectric films with good crystallite alignment show an electromechanical coupling coefficient k(15) of 0.24 which is 92% of the value of single-crystalline (k(15) = 0.26).

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1

Citation

(Scopus)
Characterization of (1120) textured ZnO films fabricated by RF magnetron sputtering

T Yanagitani, S Tomohiro, T Nohara, M Matsukawa, Y Watanabe, T Otani

Jpn. J. Appl. Phys. 43 ( 5B ) 3004 - 3007 2004.05 [Refereed]

　View Summary

Using a conventional RF magnetron sputtering system, we have obtained two types of ZnO films on various kinds of substrate. One is a film with the c-axes of crystallites unidirectionally aligned in the substrate plane {(11 (2) over bar0) textured film}. The other is a film with c-axes parallel and perpendicular to the plane (mixed texture film). The former is expected to realize a shear wave transducer on the surfaces of various materials. The alignment of c-axes of crystallites in the plane was then carefully investigated by the X-ray pole figure analysis. The elastic anisotropy in the film has been successfully measured by the Brillouin scattering method. The (11 (2) over bar0) textured film did not excite the elastic waves; however, comparatively strong shear waves were actually excited by the mixed texture film.

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30

Citation

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Formation of uniaxially (1120) textured ZnO films on glass substrates

T Yanagitani, M Matsukawa, Y Watanabe, T Otani

JOURNAL OF CRYSTAL GROWTH 276 ( 3月4日 ) 424 - 430 2004.04 [Refereed]

　View Summary

Making use of the RF magnetron sputtering technique, we have succeeded in fabricating ZnO films where c-axis of crystallites are unidirectionally aligned in the plane, without the mechanism of epitaxy. The alignment of c-axis in the plane was then carefully investigated by the X-ray pole figure analysis and atomic force microscope measurements. From these results, we have revealed the effect of substrate position during sputtering on the c-axis alignment in the plane. We have also pointed out the important effect of the oxygen ions in the RF plasma on the (1 12 0) texture formation. (c) 2004 Elsevier B.V. All rights reserved.

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33

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Giant shear mode electromechanical coupling coefficient k15 in c-axis tilted ScAlN films

Takahiko Yanagitani, Kazuki Arakawa, Kazuhiko Kano, Akihiko Teshigahara, Morito Akiyama

Proc. IEEE Ultrason. Symp. 2095 - 2098 1905.07 [Refereed]

　View Summary

Giant shear mode electromechanical coupling coeficient k15' of 0.32 (k15210 %) were found in the c-axis 33° tilted ScAlN films. High k15 values were observed even in the high temperature of 600 C. TCF values were deteriorated in ScAlN film compared with non-doped AlN crystal. Shear mode ScAlN films should be a good candidate for liquid SH-SAW and FBAR sensors in the high temperature. © 2010 IEEE.

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70

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Large-Area Growth of In-Plane Oriented (11(2)over-bar0) ZnO Films by Linear Cathode Magnetron Sputtering

Takayuki Kawamoto, Takahiko Yanagitani, Mami Matsukawa, Yoshiaki Watanabe, Yoshikazu Mori, Sho Sasaki, Masatoshi Oba

Jpn. Appl. Phys. 49 ( 7 ) 07HD16-1 - 07HD16-4 1905.07 [Refereed]

　View Summary

(11 (2) over bar0) textured ZnO films are good candidates for shear-mode piezoelectric devices. In the previous deposition techniques of these films, there have been two problems related to their practical application. These problems are as follows: (i) highly oriented films can be obtained only in a small area and (ii) the crystallite c-axis of in the films is radially oriented in the substrate plane. To resolve these problems, the sputtering deposition technique using a linear cathode has been proposed. The in-plane and out-of-plane orientations of the films were quantitatively determined by pole figure analysis. As a result, we have demonstrated the formation of in-plane unidirectionally oriented (11 (2) over bar0) ZnO films over the entire area of 4-in. silicon wafers. (C) 2010 The Japan Society of Applied Physics

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7

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「Brillouin散乱法による圧電半導体の面内方向抵抗率評価に関する検討」

柳谷隆彦, 吉田泰祐, 佐野広幸, 松川真美

21 35 - 38 1905.07
Measurement of electric properties in a ZnO single crystal via electromechanical coupling using Brillouin scattering method

Takahiko Yanagitani, Hiroyuki Sano, Mami Matsukawa

Proc. IEEE Ultrason. Symp. 1074 - 1077 1905.07 [Refereed]

　View Summary

In-plane directional electric property measurement in the semiconductors via electromechanical coupling is proposed. To estimate the properties in the crystal with less than 1 Ω·m (which is general value in intrinsic wide band-gap semiconductors), in-plane directional GHz bulk acoustic wave velocities and attenuations in a ZnO crystal have been theoretically and experimentally investigated, using Brillouin scattering method. Distribution of electric properties in the crystal, also separately measured by the electrode, has been clearly detected by the acoustic velocity distribution measurement. ©2009 IEEE.

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Electromechanical coupling coefficient of semiconducting hexagonal crystal measured by Brillouin scattering

Takahiko Yanagitani, Taisuke Yoshida, Mami Matsukawa

Proc. IEEE Ultrason. Symp. 1487 - + 1905.06 [Refereed]

　View Summary

Super high frequency (SHF) acoustic measurement realizes the piezoelectric characterization in semiconducting material without the effect of. electrical conducting. We have proposed the method for measuring shear and extensional electromechanical coupling coefficient k(15) and k(33) in a semidconducting crystal simultaneously, using Brillouin scattering method. In ZnO crystal, k(15) value measured from measured acoustic velocities was in good accordance with the previously reported constant We also have found large variety in effective piezoelectricity, implying variety of resistivity in the ZnO crystal.

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10

Citation

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Pure-shear mode BAW resonator consisting of (112̄0) textured AlN films

Takahiko Yanagitani, Masato Kiuch

Proc. IEEE Ultrason. Symp. 90 - 93 1905.06 [Refereed]

　View Summary

In-plane and out-of-plane oriented (11 2̄ 0) textured thin films are attractive for shear mode piezoelectric devices sensors, such as FBAR and SH-SAW devices. It is proposed that highly oriented (11 2̄0) AlN thin films can be fabricated ion beam sputter-deposition system with grazing incidence the substrate surface. Full-width-at-half-maximum (FWHM) values of the ∞-scan rocking curve and φ-scan profile curves of (11 22) X-ray diffraction poles were measured to be 4.6° and 23°, respectively. Shear-mode high-overtone acoustic resonator (HBAR) with (11 ̄0) textured AlN film excited pure-shear wave any longitudinal wave excitation. New device structure is because this film can be deposited on various substrates curved surfaces. ©2008 IEEE.

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2

Citation

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Ion beam sputter-deposited ZnO thin film for broadband shear wave excitation in the GHz range

Takahiko Yanagitani, Masato Much

Proc. IEEE Ultrason. Symp. 1413 - + 1905.06 [Refereed]

　View Summary

In-plane and out-of-plane oriented (11 (2) over bar0) ZnO thin films are attractive for shear wave excitation in the GHz range. It Is proposed here that highly oriented and submicron-thick (11 (2) over bar0) ZnO thin films can be fabricated using ion beam sputter-deposition system with grazing incidence to the substrate surface. This (11 (2) over bar0) texture formation cannot only be attributed to the well-known Ion channeling effect or to the self-shadowing effect since the Ion beam Incidence direction In the system does not correspond to the ion channeling direction of the ZnO film (the [10 (1) over bar0] or [11 (2) over bar0] direction). Full-width-at-half-maximum (FWHM) values of the phi-scan and psi-scan profile curves of the (11 (2) over bar2) X-ray diffraction poles were measured to be 5 degrees and 28 degrees, respectively. A shear-wave transducer with a 0.9-mu m-thick film exhibited an untuned one-way conversion loss of less than 20 dB at 1 - 2 GHz and a 3dB-fractional bandwidth of 100%, without any longitudinal wave excitation.

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2

Citation

(Scopus)
Thin film stack transducer for simultaneous generation of longitudinal and shear waves at same frequency

Takahiko Yanagitani, Takuya Matsuo, Mami Matsukawa, Watanabe Yoshiaki

Proc. IEEE Ultrason. Symp. 1874 - + 1905.06 [Refereed]

　View Summary

It is difficult to generate longitudinal and shear bulk waves simultaneously at same frequency. In this study, we propose new film stack transducer structure consisting of two layers of c-axis 23 degrees-tilted ZnO films. The upper layer and lower layer in the stack have same thicknesses, and the c-axis tilt direction in the both layers are symmetric with respect to the film surface normal. This film stack transducers were fabricated on silica glass substrate by using RF magnetron sputtering technique. Crystallographic properties of the transducer were determined by XRD pole figure analysis. Detailed conversion loss characteristics of the transducer were also discussed. Simultaneous generation of both waves at same frequency was then experimentally demonstrated in the VHF range. We also included thin film fabrication technique for obtaining two layers of c-axis-tilted ZnO films with good crystalline orientation.

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7

Citation

(Scopus)
Shear wave transducer using (11-21) textured ZnO film,”

T. Yanagitani, T. Nohara, M. Matsukawa, Y. Watanabe, T. Otani

Proc. IEEE Ultrason. Symp. 906 - 909 1905.06 [Refereed]
Improvement of Shear-Mode Electromechanical Coupling of c-Axis Parallel Oriented ZnO Film by Limiting Particle Irradiation Direction During RF Magnetron Sputtering

Naoki Tomiyama, Taiki Sato, Shinji Takayanagi, Takahiko Yanagitani

Proc. 2023 IEEE Ultrason. Symp. 2023.09

Authorship：Last author

DOI
Simple microfabrication process for quartz crystal using HF gas and catalytic materials

Ko-Hei Sano, Yoshitaka Ono, Yutaka Imamura, Yasuo Hayashi, Takahiko Yanagitani

Proc 2023 IEEE Ultrason. Symp. 2023.09

Authorship：Corresponding author

DOI
Improvement of electromechanical coupling coefficient of piezoelectric LiNbO3 by doping praseodymium

K Nakamura, S Kudo, J Jia, and T Yanagitani,

Proc. IEEE Ultrason. Symp. 1 - 4 2022.10 [Refereed]

DOI

Scopus
Quasi-shear mode electromechanical coupling coefficient of c-axis tilted MgZnO thin films

Y Shimano, H Kishi, S Kudo, and T Yanagitani,

Proc. IEEE Ultrason. Symp. 1 - 4 2022.10 [Refereed]

DOI

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Polarization inverted two layer ScAlN thin film resonator fabricated by applying external electric field

N Ishii, and T Yanagitani,

Proc. IEEE Ultrason. Symp. 1 - 4 2022.10 [Refereed]

DOI

Scopus
Growth of O-polar and Zn-polar ferroelectric MgZnO thin films controlled by sputtering geometry

Y Shimano, S Takayanagi, and T Yanagitani,

Proc. IEEE Ultrason. Symp. 1 - 4 2022.10 [Refereed]

DOI

Scopus
Experimental and theoretical investigations of enhanced electromechanical properties in YbAlN and YbGaN films

S Li, J Jia, N Iwata, and T Yanagitani,

Proc. IEEE Ultrason. Symp. 1 - 4 2022.10 [Refereed]

DOI

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A piezoelectric gyroscope with tilted c-axis ScAlN thin-films

Y Koike, R Seki, and T Yanagitani,

Proc. IEEE Ultrason. Symp. 1 - 4 2022.10 [Refereed]

DOI

Scopus

1

Citation

(Scopus)
Fabrication of high kt2and k’ 352 Sc0.4A10.6N thin films by RF magnetron sputtering

Y Shimizu and T Yanagitani

Proc. IEEE Ultrason. Symp. 1 - 4 2022.10 [Refereed]

DOI

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3

Citation

(Scopus)
Power durability evaluation of higher-order mode polarization-inverted ScAlN thin film resonators

S Shibata, and T Yanagitani,

Proc. IEEE Ultrason. Symp. 1 - 4 2022.10 [Refereed]

DOI

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IBAD c-axis parallel ZnO piezoelectric film stack for gyroscope applications

S Kudo, K Ekida, J Jia, and T Yanagitani,

Proc. IEEE Ultrason. Symp. 1 - 4 2022.10 [Refereed]

DOI

Scopus
Mechanical transmission loss of the sole Bragg reflector by GHz pulse echo technique with thick SiO2 delay line

N Ishii, K Kondo, M Suzuki, and T Yanagitani

Proc. IEEE MTT-S 1 - 4 2022.07 [Refereed]

DOI

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2

Citation

(Scopus)
Thickness shear mode epitaxial (10–12) LiNbO3 (11–20) AZO/(10–12) Al2O3 BAW resonator

S Kudo, and T Yanagitani

Proc. IEEE MTT-S 1 - 4 2022.07 [Refereed]

DOI

Scopus

1

Citation

(Scopus)
Epitaxial piezoelectric layer SMR fabricated using epitaxial sacrificial layer process

S Kudo, S Tokai, and T Yanagitani

Proc. IEEE MTT-S 1 - 4 2022.07 [Refereed]

DOI

Scopus
Fingerprint imaging with arrayed GHz PbTiO3 transducers

Y Koike, Y Sato, and T Yanagitani,

Proc. IEEE MTT-S 1 - 4 2022.07 [Refereed]

DOI

Scopus
c-Axis-tilted ScAlN films grown on silicon substrates for surface acoustic wave devices

T. Tominaga, S. Takayanagi, T. Yanagitani

Jpn. J. Appl. Phys. 61 SG1054 2022.05

Authorship：Last author
c-Axis parallel ZnO piezoelectric multilayer for BAW gyroscope applications

A Hanai, S Kudo, K Ekida, J Jia, T Yanagitani,

Proc. 2023 IEEE International Symposium on Inertial Sensors and Systems 1 - 4 2022.03 [Refereed]

DOI

Scopus
Shear mode bulk acoustic wave type gyroscope based on c-axis tilted ScAlN piezoelectric films

M Matsumura, Y Koike, R Seki, and T Yanagitani,

Proc. 2023 IEEE International Symposium on Inertial Sensors and Systems 1 - 4 2022.03 [Refereed]

DOI

Scopus
Measurement of antiresonant frequency during DC bias voltage application for analysis of second harmonic response of ScAlN on SMR

Takumi Soutome, Takahiko Yanagitani

Proc. IEEE Ultrason. Symp. 1 - 4 2020.09 [Refereed]

DOI
GHz BAW Piezoelectric Transformers with High Voltage Gain using the Combination of High and Low Dielectric Constant Thin Films

Sarina Kinoshita, Takahiko Yanagitani

Proc. IEEE Ultrason. Symp. 1 - 4 2020.09 [Refereed]

DOI
Enhancement of GHz electromechanical coupling coefficient kt2 of MgZnO and CaZnO thin film BAW resonators

Kota Izumi, Takahiko Yanagitani

Proc. IEEE Ultrason. Symp. 1 - 3 2020.09 [Refereed]

DOI
Experimental and theoretical investigation of kt2 and mechanical quality factor Qm in YbAlN films using DFT

Naoya Iwata, Sarina Kinoshita, Junjun Jia, Masashi Suzuki, Takahiko Yanagitani

Proc. IEEE Ultrason. Symp. 1 - 2 2020.09 [Refereed]

DOI
Zig-zag ScAlN multilayer SMR for high power BAW fileter application such as RF base station

Yusuke Sato, Takahiko Yanagitani

Proc. IEEE Ultrason. Symp. 1 - 3 2020.09 [Refereed]

DOI
Self-Standing FBAR Transformer based on Shear Mode Zig-zag ScAlN Multilayer for Rectenna Application

Sarina Kinoshita, Takahiko Yanagitani

Proc. IEEE Ultrason. Symp. 1 - 4 2020.09 [Refereed]

DOI
Extraction of kt2 of piezoelectric film/substrate structure by conversion loss derived by electromagnetic signal including no acoustic losses

Ryota Tatsumi, Takahiko Yanagitani

Proc. IEEE Ultrason. Symp. 1 - 3 2020.09 [Refereed]

DOI
Deterioration in the piezoelectric property of ScAlN thin films by negative ion bombardment increased in low-pressure sputtering deposition

Takumi Tominaga, Shinji Takayanagi, Takahiko Yanagitani

Proc. IEEE Ultrason. Symp. 1 - 4 2020.09 [Refereed]

DOI
Accurate Extraction of kt2 of Piezoelectric Film/Substrate Structure by Conversion Loss Method Subtracting Experimental Acoustic Losses in the Substrate

Ryota Tatsumi, Takahiko Yanagitani

Proc. IEEE Ultrason. Symp. 1 - 3 2020.09 [Refereed]

DOI
c-Axis oriented ScAlN/SiO2 multilayer BAW transformer for rectifying antenna applications

Kota Izumi, Takahiko Yanagitani

Proc. IEEE Ultrason. Symp. 1 - 4 2020.09 [Refereed]

DOI
ScAlN Nano-Rods Structure Thin Film Grown by a Self-Shadowing Oblique Sputtering for High Electromechanical Coupling Transducer Applications

Takumi Soutome, Takahiko Yanagitani

Proc. IEEE Ultrason. Symp. 1 - 4 2020.09 [Refereed]

DOI
Extracting mechanical Q factor of the pure AlN, ScAlN, and ZnO films without etching substrate

Naoya Iwata, Sarina Kinoshita, Takahiko Yanagitani

Proc. IEEE Ultrason. Symp. 1 - 2 2020.09 [Refereed]

DOI
Giga-Hertz Piezoelectric Epitaxial PZT/La-SrTiO3 Transducer for the Application of Fingerprint Imaging

Yusuke Sato, Takahiko Yanagitani

Proc. IEEE Ultrason. Symp. 1 - 3 2020.09 [Refereed]

DOI
Ion beam induced a-axis in-plane oriented c-axis oriented AlN thin film growth for high-Q BAW resonator application

Chiaki Masamune, Takahiko Yanagitani

Proc. IEEE Ultrason. Symp. 1127 - 1128 2019.10 [Refereed]

DOI
Effect of negative ions generation from sputtering target on crystalline orientation and kt2 of ScAlN thin films

Rui Kihara, Shinji Takayanagi, Takahiko Yanagitani

Proc. IEEE Ultrason. Symp. 1120 - 1123 2019.10 [Refereed]

DOI
Improvement of c-Axis Parallel Orientaition of ZnO film on Silica Glass Pipes with Various Diameters for SH-SAW Pipe Sensor

Takuya Wakabayashi, Shinji Takayanagi, Mami Matukawa, Yuta Takamura, Takahiko Yanagitani

Proc. IEEE Ultrason. Symp. 671 - 674 2019.10 [Refereed]

DOI
A method to estimate kt2 of piezoelectric films from the change of lattice strain by XRD without removing substrate

Takumi Soutome, Takahiko Yanagitani

Proc. IEEE Ultrason. Symp. 301 - 304 2019.10 [Refereed]

DOI
Shear Mode Polarity Inverted ScAlN Multilayer for Application to BAW Transformer in Rectifying Antenna

Sarina Kinoshita, Takahiko Yanagitani

Proc. IEEE Ultrason. Symp. 1118 - 1119 2019.10 [Refereed]

DOI
A Method for Extracting Mechanical Q Factor of the Piezoelectric Film without Etching Substrate

Sarina Kinoshita, Takahiko Yanagitani

Proc. IEEE Ultrason. Symp. 229 - 300 2019.10 [Refereed]

DOI
Temperature characteristics of ScAlN/SiO3 BAW resonators,

H.Igeta, M. Totsuka, M. Suzuki, T. Yanagitani

Proc. IEEE Ultrason. Symp. 2018.10 [Refereed]
A new method for extracting Qfactor of the piezoelectric film without removing substrate,

S. Kinoshita, M. Totsuka, R. Karasawa, T. Yanagitani

Proc. IEEE Ultrason. Symp. 2018.10 [Refereed]
Investigation of morphotropic phase boundary in sputter-grown Pb(Zrx, Ti1-x)O4 epitaxial films,

R. Noda, T. Shimidzu, K. Wasa, T. Yanagitani

Proc. IEEE Ultrason. Symp. 2018.10 [Refereed]
High efficiency ultrasonic transducer using polarity inverted ZnO thin film,”

T. Majima, T. Shimidzu, T. Yanagitani

Proc. IEEE Ultrason. Symp. 2018.10 [Refereed]
ScAlN free-standing 0.1mm plates with 30-51 MHz resonance frequency,”

C. Masamune, R. Karasawa, T. Yanagitani

Proc. IEEE Ultrason. Symp. 2018.10 [Refereed]
PZT epitaxial thick film for ultrasonic transducer at frequencies below 101MHz,”

Y. Mazuda, T. Shimidzu, T. Yanagitani

Proc. IEEE Ultrason. Symp. 2018.10 [Refereed]
The influence of negative ions generation on the arc-melted and hot press sintered ScAlN alloy targets to the crystalline orientation and kt3 of the ScAlN films,”

Y. Endo, R. Karasawa, S. Takayanagi, M.Imakawa, K. Morisaka, T. Yanagitani

Proc. IEEE Ultrason. Symp. 2018.10 [Refereed]
c-axis tilted ScAlN film shear mode resonators for biosensing,”

H. Yazaki, T. Sotome, S. Takayanagi, K. Yoshida, T. Yanagitani

Proc. IEEE Ultrason. Symp. 2018.10 [Refereed]
Evaluation of viscoelactic properties of liquids based on the oblique incidence technology using shear horizontal waves at frequencies above 101 megahertz from c-axis tilted ScAlN thin films,”

Y. Yamakawa, T. Yanagitani

Proc. IEEE Ultrason. Symp. 2018.10 [Refereed]
Extraction of electromechanical coupling coefficient of film / substrate structure by using the ration of a third mode resonant frequency to a fundamental mode resonant frequency,”

M. Totsuka, T. Yanagitani

Proc. IEEE Ultrason. Symp. 2018.10 [Refereed]
DC-induced piezoelectric cubic PMN-PT/piezoelectric tetragonal PZT epitaxial stack polarity inverted resonators for frequency switchable filters,”

T. Shimidzu, T. Yanagitani

Proc. IEEE Ultrason. Symp. 2018.10 [Refereed]
Polarity inverted ScAlN multilayer for application to transformer in rectifying antenna,”

R. Karasawa, T. Yanagitani

Proc. IEEE Ultrason. Symp. 2018.10 [Refereed]
Shear mode properties of c-axis parallel oriented Sc<inf>x</inf>Al<inf>1-x</inf>N films grown by RF bias sputtering

Shinji Takayanagi, Mami Matsukawa, Takahiko Yanagitani

Proc. IEEE Ultrason. Symp. 2015.11

　View Summary

© 2015 IEEE. Because the increase of piezoelectricity was found in Sc heavily doped AlN films, they have been well studied. Many researchers investigate the properties of the longitudinal mode bulk acoustic wave with c-axis normally oriented ScAlN films. However, there are few reports on the shear mode properties because of difficulties in growth of c-axis parallel oriented ScAlN films which can excite shear mode bulk acoustic wave. In this study, we demonstrated the film growth of c-axis parallel oriented ScAlN using RF substrate bias RF magnetron sputtering method. As a result of X-ray diffraction analyses, we obtained c-axis parallel oriented AlN, Sc0.05Al0.95N and Sc0.13Al0.87N films. Then, High overtone bulk acoustic wave resonators were fabricated with these films. They excited shear mode bulk acoustic wave, but shear mode conversion losses were large (more than 20 dB). It is necessary to obtain highly-crystallized ScAlN films.

DOI

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1

Citation

(Scopus)
Fast wave velocity measurement by Brillouin scattering using coherent induced phonon from ScAlN piezoelectric thin film

Masahiko Kawabe, Hayato Ichihashi, Shinji Takayanagi, Mami Matsukawa, Takahiko Yanagitani, Masashi Suzuki

Proc. IEEE Ultrason. Symp. 2015.11

　View Summary

© 2015 IEEE. Brillouin scattering is a nondestructive and noncontact technique to measure local longitudinal and shear acoustic velocities in the GHz range. However, the measurements of weak scattering from thermal phonons result in the lower measurement accuracy and longer measurement time. To overcome this problem, a technique with artificially induced acoustic phonons was developed using a ScAlN film. We observed Brillouin scattering by induced longitudinal coherent phonons from ScAlN film deposited on the side surface of a silica bulk specimen. The intensity of induced acoustic phonons was experimentally studied.

DOI

Scopus

1

Citation

(Scopus)
High Tc/high coupling perovskite thin films

K. Wasa, T. Matsushima, H. Adachi, T. Matsunaga, T. Yanagitani, T. Yamamoto

Proc. IEEE Ultrason. Symp. 1 - 4 2014.10 [Refereed]

　View Summary

Ferroelectric thin films with high Curie temperature Tc and high piezoelectric coupling factor k are fascinated for a better piezoelectric MEMS. Pb(Zr, Ti)O3 (PZT)-based ferroelectric ceramics exhibit high piezoelectricity, but the Tc is not high, i.e. Tc &lt
400°C. PZT-based piezoelectric thin films with higher Tc will be much useful. Based on a strain engineering, it is commonly understood the in-plane biaxial strain enhances the Tc of PZT thin films in a laminated composite structure. However, thickness of the PZT thin films is limited below a critical thickness typically &lt
50nm. Recently it has been found in-plane relaxed single crystal PZT-based thin films, i.e. PMnN-PZT(48/52) thin films, thickness above the critical thickness (typically 1μm), exhibited enhanced Tc The Tc is extraordinary high, Tc = 600°C. Their ferroelectric performances are beyond bulk PZT. The high Tc phenomena are demonstrated and the possible mechanisms of the high Tc behavior are discussed.

DOI

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1

Citation

(Scopus)
Effect of hydroxyapatite crystallites orientation on ultrasonic wave velocities in bovine cortical bone,”

Y. Yamato, M. Matsukawa, K. Yamazaki, H. Mizukawa, T. Yanagitani, A. Nagano

Calcif. Tissue. Int. 82 ( 2 ) 162 - 169 2008.06 [Refereed]

　View Summary

The mineral component of bone is mainly composed of calcium phosphate, constituting 70% of total bone mass almost entirely in the form of hydroxyapatite (HAp) crystals. HAp crystals have a hexagonal system and uniaxial elastic anisotropy. The objective of this study was to investigate the effect of HAp crystallite preference on macroscopic elasticity. Ultrasonic longitudinal wave velocity and the orientation of HAp crystallites in bovine cortical bone are discussed, considering microstructure, density, and bone mineral density (BMD). Eighty cube samples of cortical bone were made from two bovine femurs. The orientation of HAp crystallites was evaluated by integrated intensity ratio of (0002) peak using an X-ray diffractometer. Ultrasonic longitudinal wave velocity was investigated with a conventional pulse system. The intensity ratio of HAp crystallites and velocity were measured in three orthogonal directions; most HAp crystallites aligned in the axial direction of the femurs. Our results demonstrate a linear correlation between velocity and intensity ratio in the axial direction. Significant correlation between velocity and BMD values was observed; however, the correlation disappeared if we focused on the identical type of microstructure. In conclusion, differences in microstructure type have an impact on density and BMD, which clearly affects the velocity. In addition, at the nanoscopic level, HAp crystallites aligned in the axial direction also affected the velocity and anisotropy.

DOI

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41

Citation

(Scopus)
Distribution of hydroxyapatite crystallite orientation and ultrasonic wave velocity in ring-shaped cortical bone of bovine femur

Yu Yamato, Mami Matsukawa, Hirofumi Mizukawa, Takahiko Yanagitani, Kaoru Yamazaki, Akira Nagano

IEEE Trans. Ultrason., Ferroelectr., Freq. Contr. 55 ( 6 ) 1298 - 1303 2008.06 [Refereed]

　View Summary

At the nanoscopic level, bone consists of calcium phosphate, which forms incomplete hydroxyapatite (HAp) crystals. The preferred orientation of the c-axis of HAp crystallites induces anisotropy and inhomogeneity of elastic properties in bone. In this study, the effect of the preferred orientation of HAp crystallites on the spatial distribution of ultrasonic wave velocity was experimentally investigated, considering bone mineral density (BMD) and microstructure. Three ring-shaped cortical bone samples were made from a 36-month-old bovine femur. Longitudinal wave velocity was measured by a conventional ultrasonic pulse system, using self-made polyvinylidene fluoride transducers. The integrated intensity of the (0002) peak obtained using X-ray diffraction was estimated to evaluate the amount of preferred orientation. The velocity distribution pattern was similar to the distribution of integrated intensity of (0002). The effect of the preferred orientation of HAp crystallites on velocity was clearly observed in the plexiform structure, despite the fact that the BMD value was almost independent of the preferred orientation of HAp crystallites. Velocity measurement of cortical bone can reveal information about HAp crystallite orientation.

DOI

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14

Citation

(Scopus)
Ultrasonic Wave Properties in Bone Axis Direction of Bovine Cortical Bone

Kazufumi Yamamoto, Yuichiro Yaoi, Yu Yamato, Takahiko Yanagitan, Mami Matsukawa, Kaoru Yamazaki

Jpn. J. Appl. Phys. 47 ( 5 ) 4096 - 4100 2008.05 [Refereed]

　View Summary

Quantitative ultrasonography (QUS) is it good method for measuring elastic properties of bone in vivo. Bovine cortical bone has two typical microstructures, plexiform and Haversian. In this study, the relationship between the speed of sound (SOS) and the hydroxyapatite (HAp) crystallite orientation in the axial direction was investigated in two different aged bovine cortical bones. The dependence of attenuation oil anatomical position was also investigated. Two ring-permanent hyphen shaped cortical bone samples were obtained from 36- and 24-month-old bovine femurs. SOS was Measured with a conventional ultrasonic pulse system. The integrated intensity of the (0002) peak obtained by X-ray diffraction was determine to evaluate the amount of preferred orientation. Regardless of the age of the bovine femurs, a significant correlation between SOS and the preferred orientation of HAp crystallites was observed in parts of the plexiform structure, and the gradient of the relationship showed a similar tendency. Attenuation seemed to depend oil bone microstructure.. [DOI: 10.1143/JJAP.47.4096]

DOI

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15

Citation

(Scopus)
Observation of induced shear acoustic phonons by brillouin scattering

Shigeo Murata, Takayuki Kawamoto, Mami Matsukawa, Takahiko Yanagitani, Norikazu Ohtor

Jpn. J. Appl. Phys. 46 ( 7B ) 4626 - 4628 2007.07 [Refereed]

　View Summary

As the first step in realizing the simple and nondestructive measurement of shear waves in the GHz range, a technique involving Brillouin scattering and a ZnO shear wave transducer is proposed. Making use of transmitted shear waves, we have succeeded in observing a strong Stokes Brillouin peak in the quartz sample. This technique can be applied to the measurement of anisotropic layers and small samples.

DOI

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8

Citation

(Scopus)
Shear mode electromechanical coupling coefficient k(15) and crystallites alignment of (11(2)over-bar0) textured ZnO films

Takahiko Yanagitani, Masato Kiuchi, Mami Matsukawa, Yoshiaki Watanabe

J. Appl. Phys. 102 ( 2 ) 024110-1 - 024110-7 2007.07 [Refereed]

　View Summary

ZnO film, in which the crystallite c axis lies in the substrate plane [(11 (2) over bar0) textured ZnO], is a good candidate for application in shear mode piezoelectric devices. The relationships between the degree of crystallites alignment and the shear mode electromechanical coupling coefficient k(15) in (11 (2) over bar0) textured ZnO films have been investigated. Forty pure-shear mode high overtone bulk acoustic resonators consisting of the (11 (2) over bar0) textured ZnO film were prepared. The film was varied in crystallites alignment and film thickness. The degrees of crystallites alignment of the films were determined by x-ray pole figure analysis. The k(15) values of the films were estimated from the conversion loss characteristics of the resonators. A significant correlation was observed between dispersion of the x-ray poles and the k(15) values. However, the k(15) values in the thinner films were clearly reduced as compared with those in the thicker films despite their similarities in crystallites alignment. In addition, unexpected second harmonic mode resonance was detected in the thinner films. We concluded that the piezoelectrically inactive layer in the initial film growth deteriorated the k(15) value in thinner films. (c) 2007 American Institute of Physics.

DOI

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64

Citation

(Scopus)
Electromechanical coupling coefficient k(15) of polycrystalline ZnO films with the c-axes lie in the substrate plane

Takahiko Yanagitani, Natsuki Mishima, Mami Matsukawa, Yoshiaki Watanabe

IEEE Trans. Ultrason., Ferroelectr., Freq. Contr. 54 ( 4 ) 701 - 704 2007.04 [Refereed]

　View Summary

The (1120) textured polycrystalline ZnO films with a high shear mode electromechanical coupling coefficient k(15) are obtained by sputter deposition. An overmoded resonator, a layered structure of metal electrode film/(1120) textured ZnO piezoelectric film/metal electrode film/silica glass substrate was used to characterize k(15) by a resonant spectrum method. The (1120) textured ZnO piezoelectric films with excellent crystallite c-axis alignment showed an electromechanical coupling coefficient k(15) of 0.24. This value was 92% of k15 value in single-crystal (k(15) = 0.26).

DOI

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34

Citation

(Scopus)
Effect of sputtering geometry on (112̄0) textured ZnO piezofilm

Yoshinori Miyamoto, Takahiko Yanagitani, Mami Matsukawa, Yoshiaki Watanabe

Acoustical Science and Technology 27 ( 1 ) 53 - 55 2006.06 [Refereed]

　View Summary

The effects of sputtering geometry on (112̄0) textured ZnO piezofilm were analyzed. The ZnO film was fabricated using a conventional RF magnetron sputtering apparatus. The crystallite alignment in the substrate normal direction was estimated using the full width half maximum (FWHM) of the ω-scan rocking curve. The results show that crystallites alignment and film thickness are strongly affected by the substrate position, despite that the other sputtering conditions are identical.

DOI

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5

Citation

(Scopus)
Conversion characteristics of the shear wave transducer made of unidirectionally aligned ZnO film in plane,”

T. Nohara, T. Yanagitani, M. Matsukawa, Y. Watanabe

Jpn. J. Appl. Phys. 45 4201 - 4203 2006.06 [Refereed]

DOI

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8

Citation

(Scopus)
Effects of sputtering gas conditions on formation of (11(2)over-bar0) textured ZnO films

Takayuki Kawamoto, Takahiko Yanagitani, Mami Matsukawa, Yoshiaki Watanabe

Jpn. J. Appl. Phys. 46 ( 7B ) 4660 - 4664 2006.06 [Refereed]

　View Summary

The ZnO films in which the crystallite c-axis is unidirectionally aligned in the substrate plane [(1120) textured ZnO films] enable the realization of shear mode devices in the ultra high frequency (UHF) range. In this study, we have investigated the (1120) textured ZnO film, focusing on the effect of total gas pressure and partial gas pressure of oxygen and argon during sputtering deposition. The crystallographic characteristics of the films were measured by X-ray diffraction (XRD) analysis. In addition, optical emissions from the RF plasma were analyzed to investigate the effect of ionic species on the growth of the ZnO films. Highly crystallized (1120) textured ZnO films were obtained under the conditions of low total gas pressure and high oxygen gas concentration. Under these conditions, strong optical emission spectra from oxygen species were observed. From these results, we conclude that energetic oxygen particle bombardment to the substrate contributes to the (1120) texture formation. The film with an omega-scan rocking curve FWHM of 3.3 degrees showed a k(15) value of 0.16, which was 62% of the value for a single crystal.

DOI

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19

Citation

(Scopus)
Fast wave velocity measurement by Brillouin scattering using coherent induced phonon from ScAlN piezoelectric thin film,”

M. Kawabe, H. Ichihashi, S. Takayanagi, M. Matsukawa, T. Yanagitani

Proc. IEEE Ultrason. Symp. 2005.06 [Refereed]
Shear mode properties of c-axis parallel oriented ScxAl2-xN films grown by RF bias sputtering,”

S. Takayanagi, M. Matsukawa, T. Yanagitani

Proc. IEEE Ultrason. Symp. 2004.06 [Refereed]
Observation of induced shear acoustic phonons by Brillouin scattering

T. Yoshida, S. Murata, T. Yanagitani, M. Matsukawa

Proceedings - Acoustics 08 4605 - 4609 1905.12

　View Summary

In order to overcome the low accuracy of velocity measurements by Brillouin scattering, we have tried to make use of the induced coherent phonons, which brings intense Brillouin scattering peaks. To induce phonons, we used a tilted ZnO film transducer developed in our laboratory. As a result, we obtained the intense Stokes peak in the silica glass sample which was much larger than that obtained from the thermal phonons. Because Brillouin scattering enables the simultaneous measurement of longitudinal and shear phonons velocities, this technique opens the new feature for the non-destructive elasticity measurement.
Al極性ScAlNとO極性ZnO薄膜を用いた多層構造の高効率超音波トランスデューサ

森剛志, 柳谷隆彦

29 84 - 87 1905.07
1P5-4 Ultrasonically induced electric potentials in the cortical bone

Matsukawa Sayaka, Mori Shunki, Fontanel Elodie, Mano Isao, Mizuno Katsunori, Yanagitani Takahiko, Takayanagi Shinji, Matsukawa Mami

Proceedings of Symposium on Ultrasonic Electronics 36 ( 0 ) _1P5 - 4-1_-_1P5-4-2_ 1905.07 [Refereed]

DOI CiNii
Second harmonic mode polarization inverted resonator consisting of PbTiO4 thin film,”

K. Katada, T. Yanagitani, M, Suzuki, K. Wasa

Proc. IEEE Freq. Contr. Symp. 119 - 120 1905.07 [Refereed]
High electromechanical coupling in PZT epitaxial thick film resonators at 551 oC,”

T. Yanagitani, K. Katada, M, Suzuki, K. Wasa

Proc. IEEE Freq. Contr. Symp. 121 - 123 1905.07 [Refereed]

　View Summary

A shift of Curie temperature is reported only in a very thin epitaxial film. In this study, unusual high temperature shift of Curie temperature in thick PZT and PbTiO3film was demonstrated. Thickness extensional mode electromechanical coupling coefficient ktof the films were extracted from high-overtone bulk acoustic resonator structure. Thick PZT epitaxial (with 4.4 μm) films exhibit high ktof 0.30 at 500 °C and 0.37 at 550 °C. Moreover, high ktof 0.42 was also observed in thick PbTiO3film (with 2.8 μm) at 550 °C. © 2014 IEEE.

DOI

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8

Citation

(Scopus)
Effect of Sc concentration on shear wave velocities in ScAlN films measured by micro-Brillouin scattering technique

Hayato Ichihashi, Takahiko Yanagitani, Masashi Suzuki, Shinji Takayanagi, Mami Matsukawa

Proc. IEEE Ultrason. Symp. 2521 - 2524 1905.07 [Refereed]

　View Summary

ScAlN film is attractive for the BAW and SAW resonators because of its large piezoelectric constants compared with AlN and ZnO. However, the shear and longitudinal elastic properties perpendicular to the c-axis, which are required for SAW and BAW analyses, have not been reported. In this study, we measured shear and longitudinal wave velocities propagating perpendicular to the c-axis [nu(S) = (c(GG)/rho)(1/2) and nu(L) = (c(11)/rho)(1/2)] in ScAlN films with various Sc concentrations using microBrillouin scattering technique. The shear and longitudinal wave velocities in the Sc0.41Al0.59N films decreased to 69% and 81% of those in a pure AlN film, respectively. The shear wave velocity in the film with Sc concentration more than 50% increased with increasing of Sc concentration.

DOI

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17

Citation

(Scopus)
Multiple shear wave roundtrips liquid sensor by c-axis parallel oriented ZnO film/silica glass pipe structure

Shoko Hiyama, Takahiko Yanagitani, Shinji Takayanagi, Yoshiya Kato, Mami Matsukawa

Proc. IEEE Ultrason. Symp. 765 - 768 1905.07 [Refereed]

　View Summary

We demonstrated the multiple roundtrips of shear horizontal (SH) waves using IDT/c-axis parallel-oriented (1120) ZnO film/silica glass pipe structure for a high-sensitive liquid sensor. Forth roundtrip was observed in the time response of acoustic waves. The insertion loss of the first lap consisted of two frequency components at 131 MHz and 160-350 MHz. IDT/c-axis parallel-oriented ZnO film/silica glass cylinder structure was also fabricated, but multiple roundtrips were not occurred. Therefore, we considered the waves propagating in the pipe structure as plate type waves, not surface acoustic waves. In addition, the liquid loading characteristics of the pipe structure sensor were measured by immersing inside or outside of the pipe in liquid. Because the insertion loss increases in the pipe structure with pure water loading were relatively small, we can conclude that the waves were SH-type plate wave. Liquid property detections using both outside and inside of the pipe structure sensor are expected.

DOI

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3

Citation

(Scopus)
PZT-based high coupling with low permittivity thin films

Kiyotaka Wasa, Tomoaki Matsushima, Hideaki Adachi, Toshifumi Matsunaga, Masashi Suzuki, Takahiko Yanagitani, Takashi Yamamoto, Shinya Yoshida, Shuji Tanaka, S. Trolier-Mckinstry

Proc. IEEE Ultrason. Symp. 69 - 72 1905.07 [Refereed]

　View Summary

PZT-based piezoelectric thin films will make better piezoelectric devices including piezoelectric energy harvesting (EH) power MEMS, when the piezoelectric thin films show high electromechanical coupling and/or high piezoelectric constants with low permittivity. The piezoelectric thin films are mostly polycrystalline structure with high piezoelectric constants and high dielectric constants, i.e. ε*=300-1300 and e31,f = -8 ∼ - 12C/m2. Recently we have found thin films of single c-domain/single crystal PZT-based ternary perovskite, Pb(Mn,Nb)-PZT, exhibit exotic properties, i.e. high coupling and/or high piezoelectric constants with low dielectric constants opposed to the PZT-based thin films. The relative dielectric constants are as low as 100 with e31,f = -12 C/m 2. The low dielectric constants achieve high values of Figures of Merit for the EH-MEMS. This paper will discuss on the origin of the exotic dielectric and piezoelectric properties of the single c-domain/single crystal thin films in comparison with bulk PZT-based ceramics. © 2013 IEEE.

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Fast hypersonic velocity measurement by Brillouin scattering from induced phonons

Takeshi Sugimoto, Takahiko Yanagitani, Shinji Takayanagi, Mami Matsukawa

Proc. IEEE Ultrason. Symp. 2187 - 2190 1905.07 [Refereed]

　View Summary

Brillouin scattering method is a nondestructive and noncontact technique to measure local longitudinal and shear acoustic velocities in the GHz range. However, the measurements of weak scattering from thermal phonons result in the lower measurement accuracy and longer measurement time. To overcome this problem, a technique with artificially induced acoustic phonons was developed using a polycrystalline ZnO film, with a coaxial resonator to apply electric field. In this study, we observed Brillouin scattering by induced longitudinal phonons from ZnO film deposited on the rear surface of a plate sample. We investigated the relationship between the intensity of induced acoustic phonons and the input microwave power of a coaxial resonator. The effect of incident angle of light was also investigated.

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Polarization inverted (0001) / (000-2) ScAlN film resonators operating in second overtone mode,”

M. Suzuki, T. Yanagitani, H. Odagawa

Proc. IEEE Ultrason. Symp. 1922 - 1924 1905.07 [Refereed]

　View Summary

Polarization-inverted multilayered structure can excite high overtone mode resonance. Resonant frequency of high order mode resonator is higher than that of 1st mode resonator even though entire film resonator is thicker in same operating frequency. Therefore, high order mode resonator is expected to have high power handling capability. Polarization are controlled by bottom surface properties in epitaxial films, but polarization inverted multilayer structure can not be fabricated. We obtained polarization inversion in ScAlN film by Al target sputtering with small amount of Al2O3 ingot. Thickness extensional mode electromechanical coupling k(t) of the ScAlN film was estimated to be 0.21. Two layered polarization inverted ScAlN film resonator was prepared in this deposition process. Suppression of 1st mode resonance and excitation of 2nd overtone mode resonance were observed.

DOI

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2

Citation

(Scopus)
「RFバイアススパッタ法による簡便なc軸平行配向ZnO膜の形成--RFバイアスを用いたイオン照射による結晶配向制御」

高柳真司, 松川真美, 渡辺好章, 柳谷隆彦

22 59 - 62 1905.07
「c軸平行配向AlN薄膜を用いた極性反転すべり共振子」

鈴木雅視, 柳谷隆彦

23 40 - 44 1905.07
Quantitative analysis of the effect of energetic particle bombardment during deposition on (11(2)over-bar0) texture formation in ZnO films

Shinji Takayanagi, Takahiko Yanagitani, Mami Matsukawa, Yoshiaki Watanabe

Proc. IEEE Ultrason. Symp. 2317 - 2320 1905.07 [Refereed]

　View Summary

C-axis parallel-oriented (11 (2) over bar0) ZnO films are suitable for shear mode devices. In previous studies, we pointed out that (11 (2) over bar0) texture formation was induced by the ion bombardment during a planer RF magnetron sputtering deposition. However, quantitative information of the relationship between ion energy and amount of ion irradiation are not clear. In this study, we investigated the effects of energetic ion bombardment during sputtering deposition on (11 (2) over bar0) texture formation. The distribution of crystalline orientation of the films on the anode plane was compared with the distribution of the amount of ion flux in the anode plane. Highly crystallized (11 (2) over bar0) orientation appeared above the target erosion area where highly energetic O-l ions bombardment was observed under the low gas pressure condition. This information will give us how to obtain much better (11 (2) over bar0) textured ZnO films for share mode devices.

DOI

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3

Citation

(Scopus)
Brillouin scattering from induced phonons excited by the ZnO piezoelectric thin film with a coaxial resonator

Takeshi Sugimoto, Hiroyuki Sano, Takahiko Yanagitani, Shinji Takayanagi, Mami Matsukawa

Proc. IEEE Ultrason. Symp. 1099 - 1102 1905.07 [Refereed]

　View Summary

Brillouin scattering method is a nondestructive and noncontact technique to measure local longitudinal and shear acoustic velocities in the GHz range. However, the measurements of weak scattering from thermal phonons result in the lower measurement accuracy and longer measurement time than those of other methods, such as ultrasonic pulse techniques. To overcome these problems, a technique with induced phonons was developed using a ZnO piezoelectric thin film and a coaxial resonator. Especially, this technique enables simple measurement system without electrodes making use of evanescent electric field to ZnO film. In this study, ZnO piezoelectric thin film was deposited on curved and rear surfaces.

DOI

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2

Citation

(Scopus)
C-axis parallel oriented ZnO film SH-SAW sensor for electrical conductivity measurement in liquid

Yuta Nakahigashi, Takahiko Yanagitani, Mami Matsukawa, Watanabe Yoshiaki

Proc. IEEE Ultrason. Symp. 810 - 813 1905.07 [Refereed]

　View Summary

A shear horizontal type surface acoustic wave (SH-SAW) device can be a sensor operating in liquid, because SH-SAW propagates at liquid/solid interface without energy leakage to liquid. This device can detect changes in conductivity and viscosity of liquid. c-axis parallel oriented ZnO film can be one of the best candidates for the SH-SAW liquid sensor on various substrates. Theoretical investigation of K-2 value in IDT / ZnO (0 degrees, 90 degrees, Psi) film / silica glass substrate structure showed that maximum value of K-2 = 3.4 % was found at Psi = 55 degrees with H / lambda = 0.21. In this study, we fabricated these structures and evaluated K-2 values. Finally, the electrical conductivity of liquid was detected as the velocity change.

DOI

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1

Citation

(Scopus)
Polarization-inverted multilayered pure shear mode AlN film resonator

Masashi Suzuki, Takahiko Yanagitani

Proc. IEEE Ultrason. Symp. 312 - 315 1905.07 [Refereed]

　View Summary

c-axis parallel AlN film is suitable for pure shear mode devices. Polarization-inverted multilayered structure can excite high order mode resonance. The film thickness of high order mode resonator is thicker than that of fundamental mode resonator in same operating frequency. Therefore, the multilayered resonator is expected to have high power handling capability. c-axis parallel polarization-inverted multilayered AlN films were fabricated by ion beam assisted deposition (IBAD). c-axis parallel orientation was formed under the 3 kV accelerated ion beam irradiation. Shear mode resonator was prepared to investigate piezoelectric properties of the film. Only pure shear wave without any longitudinal wave was excited in the resonators. k(15) was determined to be 0.05 and this value is 71 % of the single crystalline AlN.
We considered that in-plane crystal growth direction should to be determined by the ion beam irradiation direction. c-axis parallel multilayer AlN film was fabricated by inverting in-plane beam irradiation direction. High order mode resonance was observed in the resonators, showing that polarization was inverted in the multilayer AlN films.

DOI

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6

Citation

(Scopus)
C-axis parallel oriented AlN film resonator fabricated by ion-beam assisted RF magnetron sputtering

Masashi Suzuki, Takahiko Yanagitani

2011 IEEE INTERNATIONAL ULTRASONICS SYMPOSIUM (IUS) 1230 - 1233 1905.07 [Refereed]

　View Summary

c-axis parallel oriented AlN films excite only pure shear wave. These films are suitable for thickness shear mode film resonators and SH-SAW devices. However, c-axis in the wurzite film such as ZnO and AlN tends to grow normal to the substrate. We previously found that c-axis parallel orientation is induced by ion-beam irradiation during deposition in ZnO films. In this study, we investigated the orientation control of AlN films by using ion-beam assisted RF magnetron sputtering. c-axis parallel oriented AlN films were obtained in the sample deposited under 3 kV accelerated ion beam irradiation The direction of c-axis corresponded to the ion beam direction. c-axis parallel AlN film SMR with asymmetric Bragg reflector was then prepared. Pure shear mode was excited in the resonator. Effective k(15)' of the resonator was determined to be 0.052, and TCF was found to be - 30.2 ppm/degrees C.

DOI

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5

Citation

(Scopus)
「(11-21)配向AlN薄膜を用いた純横波モード共振子」

柳谷隆彦, 木内正人, 松川真美

22 46 - 49 1905.07
「c軸傾斜反転配向ZnO多層膜の作製」

守里直希, 高柳真司, 柳谷隆彦, 松川真美, 渡辺好章

22 60 - 65 1905.07
A simple technique for obtaining (11-20) or (10-11)textured ZnO films by RF bias sputtering”

S. Takayanagi, T. Yanagitani, M. Matsukawa, Y. Watanabe

1060 - 1063 1905.07 [Refereed]

DOI

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4

Citation

(Scopus)
Deposition techniques of c-axis-tilted ScAlN films by conventional RF magnetron sputtering

Kazuki Arakawa, Takahiko Yanagitani, Kazuhiko Kano, Akihiko Teshigahara, Morito Akiyama

Proc. IEEE Ultrason. Symp. 1050 - 1053 1905.07 [Refereed]

　View Summary

It is difficult to synthesize c-axis tilted ScAlN films by using co-sputtering because unidirectional oblique incident of sputtered particles is needed to obtain c-axis tilted structure. To realize the oblique incident single source sputtering technique was proposed for c-axis tilted film deposition. ScAl alloy target was used to achieve ScAlN film synthesis instead of co-sputtering. As a result c-axis highly tilted ScAlN film (tilt angle 33) was obtained by using this deposition technique. From the result of film transducer loss measurement we found that longitudinal and shear elasticity of AlN decreases by adding Sc. c-axis highly tilted ScAlN film showed giant k 15' values of 0.32 in spite of its low degree of orientation. © 2010 IEEE.

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23

Citation

(Scopus)
Influence of shadowing effect on shear mode acoustic properties in the c-axis tilted AlN films

Masashi Suzuki, Takahiko Yanagitani

Proc. IEEE Ultrason. Symp. 1478 - 1481 1905.07 [Refereed]

　View Summary

C-axis tilted AlN films have been studied for use in quasi-shear mode devices. Highly tilted columnar structure induces the decrease of film density (void between columnar grains) because of the shadowing effect. This could affect the performance of shear mode resonator. In this study, the relationship between the acoustic properties and the grain structure is investigated in c-axis tilted AlN film. Acoustic properties of the resonators were estimated by the characteristic of conversion loss in composite resonator. In c-axis highly tilted AlN film, 1/4 and 3/4 wavelength resonance due to the decrease of shear wave velocity were observed in a number of samples. This phenomenon was not observed in longitudinal wave mode. Porous film structure was also observed in the highly tilted films by across sectional SEM image. Decrease of shear wave velocity would be caused by this structure because shear wave is more sensitive to the porous structure than longitudinal wave. © 2010 IEEE.

DOI

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4

Citation

(Scopus)
Multilayered shear wave resonator consisting of c-axis tilted ZnO films

Naoki Morisato, Shinji Takayanagi, Takahiko Yanagitani, Mami Matsukawa, Yoshiaki Watanabe

Proc. IEEE Ultrason. Symp. 2162 - 2165 1905.07 [Refereed]

　View Summary

Multilayer resonator consisting of six layered ZnO films was fabricated using RF magnetron sputtering. To prevent degradation of crystalline orientation, SiO2 buffer layers were inserted between each ZnO layer. The influences of the method for SiO2 deposition on the crystalline orientation also have been investigated. Crystalline orientation of the c-axis tilted ZnO films were confirmed by XRD pole figure analysis and SEM images. In the sixth order mode shear mode resonant frequency, high efficient shear mode excitation with relatively suppressed extensional mode excitation was observed. More extensional mode suppression is expected by increasing the number of the layer. ©2009 IEEE.

DOI

Scopus

1

Citation

(Scopus)
Distribution of longitudinal wave velocity and hydroxyapatite crystallite orientation in bovine cortical bone

Yuichiro Yaoi, Kazufumi Yamamoto, Yu Yamato, Takahiko Yanagitani, Mami Matsukawa, Kaoru Yamazaki, Akira Nagano

Acoustical Science and Technology 30 ( 4 ) 306 - 309 1905.07 [Refereed]

　View Summary

The relationship between the ultrasonic wave velocity and the preferred orientation of HAp crystallites in bovine cortical bones was investigated. The distribution of velocity in the bone axis direction was measured considering the micro-structure and BMD. Cortical bones of four bovine left femurs were used and ring-shaped cortical bone specimens from the middle shaft were obtained. An ultrasonic pulse-echo method was used for the measurement of the longitudinal wave velocity. A pair of wideband self-made polyvinylidene fluoride (PVDF) transducers were used. The received signal was changed into the electric pulse signal, and amplified by a 40 dB preamplifier. Finally, the waveform of the signal was observed using a digital oscilloscope. A significant correlation between the velocity and the preferred orientation of HAp crystallites was observed in the bone with a plexiform structure.

DOI

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4

Citation

(Scopus)
「c軸傾斜配向ZnO膜の開発〜高い横波変換効率の実現〜」

松尾卓也, 柳谷隆彦, 松川真美, 渡辺好章

20 75 - 78 1905.06
「イオン照射によるZnO圧電膜の配向制御に関する検討」

柳谷隆彦, 木内正人

20 67 - 70 1905.06
Pure-shear mode BAW resonators consisting of (11-21) textured ZnO films,”

T. Yanagitani, M. Kiuch, M. Matsukawa, Y. Watanabe

4987 - 4992 1905.06 [Refereed]
「面内配向ZnO膜のSH型SAW伝搬特性」

田中厚志, 柳谷隆彦, 松川真美, 渡辺好章

19 1905.06
Propagation characteristics of SH-SAW in (11(2)over-bar0) ZnO layer/silica glass substrate structures

Atsushi Tanaka, Takahiko Yanagitani, Mami Matsukawa, Watanabe Yoshiaki

Proc. IEEE Ultrason. Symp. 280 - + 1905.06 [Refereed]

　View Summary

A (11 (2) over bar0) textured ZnO film can excite SH-SAW. Therefore, the film on various substrates is an attractive option for fabricating the SH-SAW device on a silicon IC, and the device on a curved surface. In this report, the electromechanical coupling coefficients (K-2) in the ZnO (0 degrees, 90 degrees, psi) film/silica glass substrate structures were theoretically estimated. The theoretical results showed that the IDT electrode/ZnO (0 degrees, 90 degrees, 55 degrees) film/sil.ica glass substrate structure had a relatively large K-2 value of 3.4% at H/lambda=0.21. This structure was then fabricated using RF magnetron sputtering technique. The experimental results clearly demonstrated SH-SAW excitation in the structure.

DOI

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2

Citation

(Scopus)
Highly oriented c-axis 23° tilted ZnO films with high quasi-shear mode electromechanical coupling coefficients

Takuya Matsuo, Takahiko Yanagitani, Mami Matsukawa, Yoshiaki Watanabe

Proc. IEEE Ultrason. Symp. 1229 - 1232 1905.06 [Refereed]

　View Summary

A quasi-shear mode piezoelectric film with high electromechanical coupling coefficient k'15 is attractive for shear wave transducers, shear mode FBAR and SH-SAW devices. The single crystalline ideal ZnO film with c-axis-tilt angle of 28° from the surface normal of the film has high k'15 value of 0.38. In this study, we have investigated c-axis-tilted ZnO films to obtain sufficient tilt angle and good crystalline alignment using RF magnetron sputtering technique. We focused on the angle between the substrate surface and target surface during the sputtering deposition. In case that the film was deposited on the substrate set at 90° to the target surface, relatively large c-axis tilted angles of 22.6°-26.2° were obtained. Moreover, small ψ-scan FWHM values from 6.7° to 7.8° of the film indicated good crystalline alignment. Finally, k'15 value of this film was estimated as 0.26, which was the highest value ever reported for c-axis-tilted ZnO or AlN films. © 2007 IEEE.

DOI

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20

Citation

(Scopus)
Film growth of c-axis tilted ScAlN on the sapphire substrate for SAW devices,”

S. Tokuda, S. Takayanagi, M. Matsukawa, T. Yanagitani

Proc. IEEE Ultrason. Symp. 1 - 4 1905.06 [Refereed]
The frequency wwitchable multi-layered BST/BaTiO4 epitaxial film resonator,”

S. Takayanagi, M. Matsukawa, T. Yanagitani

Proc. IEEE Ultrason. Symp. 1 - 4 1905.06 [Refereed]
High electromechanical coefficient kt 2=19% thick ScAlN piezoelectric films for ultrasonic transducer in low frequency of 81 MHz,”

K-h. Sano, R. Karasawa, T. Yanagitani

Proc. IEEE Ultrason. Symp. 1 - 4 1905.06 [Refereed]
A new type wide-frequency-range shear viscosity sensor using caxis tilted ScAlN thin film on temperature Stable AT-cut quartz thick plate,”

Y. Yamakawa, K-h. Sano, R. Karasawa, T. Yanagitani

Proc. IEEE Ultrason. Symp. 1 - 4 1905.06 [Refereed]
C-axis zig-zag polarization inverted ScAlN multilayer for FBAR transformer rectifying antenna,”

R. Karasawa, T. Yanagitani

Proc. IEEE Ultrason. Symp. 1 - 4 1905.06 [Refereed]
Rapid and simultaneous measurement of longitudinal and shear wave velocities by Brillouin scattering from artificially induced phonons,”

M. Kawabe, Y. Shibagaki, M. Matsukawa, T. Yanagitani, M. Suzuki, S .Takayanagi

Proc. IEEE Ultrason. Symp. 1 - 4 1905.06 [Refereed]

DOI

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Effects of energetic negative ions generated from sputtering targets on ScAlN film growth,”

S. Takayanagi, M. Matsukawa, T. Yanagitani

Proc. IEEE Ultrason. Symp. 1 - 4 1905.06 [Refereed]

DOI

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8

Citation

(Scopus)

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Books and Other Publications

次世代医療・ヘルスケア機器のデバイス技術と最新開発事例集

技術情報協会 2014.05
次世代医療・ヘルスケア機器のデバイス技術と最新開発事例集

技術情報協会 2014.05
Acoustic Waves - From Microdevices to Helioseismology Chapter 22 Shear Mode Piezoelectric Thin Film Resonators pp.501-520

Intech 2011.10 ISBN: 9789533075723

Presentations

エピタキシャルYSZ薄膜およびYHfO2薄膜の誘起圧電性

勝又彩馨, 島野耀康, 柳谷隆彦

応用物理学会 (東京都市大学)

Presentation date： 2024.03

Event date：
2024.03

　

　
純 AlN 薄膜 SMR の kt2ヒステリシス特性

花井彩香, 柳谷隆彦

応用物理学会 (東京都市大学)

Presentation date： 2024.03

Event date：
2024.03

　

　
周期的傾斜分極反転構造とベタ電極からなるSAWデバイス

松村理司, 島野耀康, 大野直輝, 柳谷隆彦,長康雄

応用物理学会 (東京都市大学)

Presentation date： 2024.03

Event date：
2024.03

　

　
c 軸傾斜 ScAlN 薄膜を用いた送受波型ジャイロセンサの作製

小池由奈, 柳谷隆彦

応用物理学会 (東京都市大学)

Presentation date： 2024.03

Event date：
2024.03

　

　
エピタキシャル PbTiO3薄膜を用いたブラッグ反射器型共振子の分極反転特性

下山航, 島野耀康, 國信聡太, 柳谷隆彦

応用物理学会 (東京都市大学)

Presentation date： 2024.03

Event date：
2024.03

　

　
分極反転もしくは中間電極を用いたScAlN多層薄膜SMRによる二重モード型BAWフィルタ(DMB)

松村桃佳, 柴田真之, 柳谷隆彦

圧電・材料デバイスシンポジウム2024 (東北大学)

Presentation date： 2024.01

Event date：
2024.01

　

　
AOGsレスSc0.4Al0.6N薄膜の大面積成膜を目指した矩形カソード平行平板スパッタリング

浴田航平, 石井直輝, 島野耀康, 柳谷隆彦

圧電・材料デバイスシンポジウム2024 (東北大学)

Presentation date： 2024.01

Event date：
2024.01

　

　
純AlN薄膜共振子の強誘電性とヒステリシス特性

花井彩香, 柳谷隆彦

圧電・材料デバイスシンポジウム2024 (東北大学)

Presentation date： 2024.01

Event date：
2024.01

　

　
周期的傾斜分極反転構造を用いたベタ電極によるSAWの励振

松村理司, 島野耀康, 大野直輝, 柳谷隆彦, 長康雄

圧電・材料デバイスシンポジウム2024 (東北大学)

Presentation date： 2024.01

Event date：
2024.01

　

　
エピタキシャルYSZ薄膜およびYHfO2薄膜の電界誘起圧電性

勝又彩馨, 島野耀康, 柳谷隆彦

圧電・材料デバイスシンポジウム2024 (東北大学)

Presentation date： 2024.01

Event date：
2024.01

　

　
パルスエコー法による減衰定数測定を用いたScAlN薄膜のQ値評価

島野耀康, 柳谷隆彦

圧電・材料デバイスシンポジウム2024 (東北大学)

Presentation date： 2024.01

Event date：
2024.01

　

　
電極抵抗低減に向けて上下電極に金属音響ブラッグ反射器を採用したSMR

富岡美咲, 渡海智, 柳谷隆彦

圧電・材料デバイスシンポジウム2024 (東北大学)

Presentation date： 2024.01

Event date：
2024.01

　

　
エピタキシャルPbTiO3薄膜を用いたブラッグ反射器型共振子

下山航, 島野耀康, 國信聡太, 柳谷隆彦

圧電・材料デバイスシンポジウム2024 (東北大学)

Presentation date： 2024.01

Event date：
2024.01

　

　
数百MHz帯超音波を用いた複素反射率測定による生体物質の相互作用の検出

茂木彩音, 柳谷隆彦

電子情報通信学会応用音響研究会 (九州大学)

Presentation date： 2023.12

Event date：
2023.12

　

　
エピタキシャルZnO犠牲層を用いたc軸傾斜エピタキシャルScAlN自立薄膜共振子

小林栞, 柳谷隆彦

電子情報通信学会応用音響研究会 (九州大学)

Presentation date： 2023.12

Event date：
2023.12

　

　
c軸傾斜Sc0.4Al0.6N薄膜の大面積成膜を目指した矩形カソードによる平行平板スパッタリング

石井直輝, 柳谷隆彦

電子情報通信学会応用音響研究会 (九州大学)

Presentation date： 2023.12

Event date：
2023.12

　

　
厚みすべりモードc軸ジグザグScAlN積層を用いたSMR型圧電トランス

白岩和剛, 柳谷隆彦

電子情報通信学会応用音響研究会 (九州大学)

Presentation date： 2023.12

Event date：
2023.12

　

　
PbTiO3エピタキシャル自立薄膜共振子の電気機械結合係数ヒステリシスカーブ

國信聡太, 柳谷隆彦

電子情報通信学会応用音響研究会 (九州大学)

Presentation date： 2023.12

Event date：
2023.12

　

　
積層電極によるScAlN多層薄膜SMRを用いた二重モードBAWフィルタ(DMB)

柴田真之, 柳谷隆彦

電子情報通信学会応用音響研究会 (九州大学)

Presentation date： 2023.12

Event date：
2023.12

　

　
エピ犠牲層エッチングを用いたエピ圧電層/音響ブラッグ反射器構造の作製

渡海智, 柳谷隆彦

電子情報通信学会応用音響研究会 (九州大学)

Presentation date： 2023.12

Event date：
2023.12

　

　
c軸傾斜エピPbTiO3薄膜の高い擬似すべりモード電気機械結合係数

國信聡太, 柳谷隆彦

電子情報通信学会超音波研究会 (静岡大学)

Presentation date： 2023.11

Event date：
2023.11

　

　
高電力性向上を目的とした高次モード分極反転ScAlN薄膜SMR

柴田真之, 柳谷隆彦

電子情報通信学会超音波研究会 (静岡大学)

Presentation date： 2023.11

Event date：
2023.11

　

　
圧電層と基板の音響分離を目指した30層分極反転HBAR

白岩和剛, 柳谷隆彦

電子情報通信学会超音波研究会 (静岡大学)

Presentation date： 2023.11

Event date：
2023.11

　

　
エピ圧電薄膜/エピ音響ブラッグ反射器構造のSMR

渡海智, 柳谷隆彦

電子情報通信学会超音波研究会 (静岡大学)

Presentation date： 2023.11

Event date：
2023.11

　

　
高い横波電気機械結合係数を持つc軸傾斜PbTiO3薄膜/オフ角La-SrTiO3基板共振子

國信聡太, 柳谷隆彦

第44回超音波エレクトロニクスの基礎と応用に関するシンポジウムUSE2023 (富山国際会議場)

Presentation date： 2023.11

Event date：
2023.11

　

　
エピ音響ブラッグ反射器上に成長させたエピScAlN, MgZnO圧電薄膜SMR

渡海智, 柳谷隆彦

第44回超音波エレクトロニクスの基礎と応用に関するシンポジウムUSE2023 (富山国際会議場)

Presentation date： 2023.11

Event date：
2023.11

　

　
c軸ジグザグ分極反転ScAlN薄膜を用いたトランスバーサル型BAWフィルタ

柴田真之, 柳谷隆彦

第44回超音波エレクトロニクスの基礎と応用に関するシンポジウムUSE2023 (富山国際会議場)

Presentation date： 2023.11

Event date：
2023.11

　

　
Acoustic separation of piezoelectric layer and substrate using 30-layer c-axis zigzag ScAlN polarization inversion resonator

S. Tokai and T. Yanagitani

The 15th PACIFIC RIM conference of ceramic societies(PACRIM15)

Presentation date： 2023.11

Event date：
2023.11

　

　
kt2 Hysteresis curves of PbTiO3 epitaxial film resonators before and after removing substrate

S. Kuninobu and T. Yanagitani

The 15th PACIFIC RIM conference of ceramic societies(PACRIM15)

Presentation date： 2023.11

Event date：
2023.11

　

　
Characteristics of piezoelectric LiNbO3 epitaxial thin films grown on off-angle Al2O3 substrate

F. Zitai and T. Yanagitani

The 15th PACIFIC RIM conference of ceramic societies(PACRIM15)

Presentation date： 2023.11

Event date：
2023.11

　

　
Polarization-inverted c-axis zigzag ScAlN multilayers for transversal type BAW filter

S. Shibata and T. Yanagitani

The 15th PACIFIC RIM conference of ceramic societies(PACRIM15)

Presentation date： 2023.11

Event date：
2023.11

　

　
Full epitaxial ZnO, MgZnO and ScAlN piezoelectric thin film BAW resonators based on epitaxial acoustic Bragg refractor

S. Tokai and T. Yanagitani

The 15th PACIFIC RIM conference of ceramic societies(PACRIM15)

Presentation date： 2023.11

Event date：
2023.11

　

　
Shear mode electromechanical coupling coefficient of c-axis tilted PbTiO3 epitaxial thin film/off-angle La-SrTiO3 substrate

S. Kuninobu and T. Yanagitani

The 15th PACIFIC RIM conference of ceramic societies(PACRIM15)

Presentation date： 2023.11

Event date：
2023.11

　

　
Characteristics of acoustic resonators using YbAlN and YbGaN epitaxial piezoelectric thin films

F. Zitai and T. Yanagitani

The 15th PACIFIC RIM conference of ceramic societies(PACRIM15)

Presentation date： 2023.11

Event date：
2023.11

　

　
RF power durability of polarization-inverted c-axis zigzag ScAlN piezoelectric multilayers

S. Shibata and T. Yanagitani

The 15th PACIFIC RIM conference of ceramic societies(PACRIM15)

Presentation date： 2023.11

Event date：
2023.11

　

　
基地局向けRFフィルタを目指した多層圧電薄膜共振子

白岩和剛, 柳谷隆彦

革新的無線通信技術に関する横断型研究会 (沖縄市町村自治会館)

Presentation date： 2023.10

Event date：
2023.10

　

　
RFフィルタ向け窒化物多層圧電薄膜のハイパワー特性

柴田真之, 柳谷隆彦

革新的無線通信技術に関する横断型研究会 (沖縄市町村自治会館)

Presentation date： 2023.10

Event date：
2023.10

　

　
横波型RFフィルタを目指したPbTiO3圧電薄膜

國信聡太, 柳谷隆彦

革新的無線通信技術に関する横断型研究会 (沖縄市町村自治会館)

Presentation date： 2023.10

Event date：
2023.10

　

　
RFフィルタ向けエピタキシャル圧電薄膜多層構造

渡海智, 柳谷隆彦

革新的無線通信技術に関する横断型研究会 (沖縄市町村自治会館)

Presentation date： 2023.10

Event date：
2023.10

　

　
多重エコー集約による基板付き圧電薄膜の電気機械結合係数keff2の新規評価法

島野耀康, 柳谷隆彦

日本音響学会第150回(2023年秋季)研究発表会 (名古屋工業大学)

Presentation date： 2023.09

Event date：
2023.09

　

　
c-axis tilted LiNbO3 epitaxial thin film grown on off-angle Al2O3 single crystal substrate

H. Uchida and T. Yanagitani

IEEE Ultrasonic Symposium 2023

Presentation date： 2023.09

Event date：
2023.09

　

　
Hysteresis curves of ferroelectric ScAlN films for fabricating periodically polarization inverted structure

S. Matsumura and T.Yanagitani

IEEE Ultrasonic Symposium 2023

Presentation date： 2023.09

Event date：
2023.09

　

　
Investigation of the origins of electrode area dependence in kt2 evaluation using FEM analysis in comparison with experimental data

Y. Shimano and T. Yanagitani

IEEE Ultrasonic Symposium 2023

Presentation date： 2023.09

Event date：
2023.09

　

　
New method for extracting keff2 from HBAR by producing pseudo FBAR characteristics without substrate removal

Y. Shimano and T. Yanagitani

IEEE Ultrasonic Symposium 2023

Presentation date： 2023.09

Event date：
2023.09

　

　
30-layer polarization inversion resonator for acoustic separation of the piezoelectric layer and the substrate

S. Tokai and T. Yanagitani

IEEE Ultrasonic Symposium 2023

Presentation date： 2023.09

Event date：
2023.09

　

　
High quasi-shear mode electromechanical coupling of c-axis tilted PbTiO3 epitaxial thin film grown on off-angle SrTiO3 single crystal substrate

S. Kuninobu and T. Yanagitani

IEEE Ultrasonic Symposium 2023

Presentation date： 2023.09

Event date：
2023.09

　

　
Quasi-shear mode excitation of c-axis tilted ScAlN and MgZnO epitaxial thin films on off-angle sapphire single crystal substrates

S. Kuninobu and T. Yanagitani

IEEE Ultrasonic Symposium 2023

Presentation date： 2023.09

Event date：
2023.09

　

　
Shear mechanical properties of acoustic Bragg reflector measured by GHz pulse echo method

S. Matsumura and T. Y anagitani

IEEE Ultrasonic Symposium 2023

Presentation date： 2023.09

Event date：
2023.09

　

　
Full-epitaxial ScAlN, ZnO and MgZnO SMR based on epitaxial metal acoustic Bragg reflector

S. Tokai and T. Yanagitani

IEEE Ultrasonic Symposium 2023

Presentation date： 2023.09

Event date：
2023.09

　

　
強誘電性ScAlN薄膜SMRのkt2ヒステリシス特性

松村理司, 柳谷隆彦

第52回EMシンポジウム (東京理科大学)

Presentation date： 2023.07

Event date：
2023.07

　

　
厚さ0.1 mmのc軸傾斜ScAlN 厚膜の擬似横波励振特性

國信聡太, 柳谷隆彦

第52回EMシンポジウム (東京理科大学)

Presentation date： 2023.07

Event date：
2023.07

　

　
エピ金属薄膜から成る音響ブラッグ反射器上にエピ圧電薄膜を持つSMR

渡海智, 柳谷隆彦

第52回EMシンポジウム (東京理科大学)

Presentation date： 2023.07

Event date：
2023.07

　

　
圧電層と基板の音響分離を目指した30層c軸ジグザグScAlN分極反転共振子

白岩和剛, 柳谷隆彦

第11回弾性波素子技術コンソーシアム研究会 (機械振興会館)

Presentation date： 2023.06

Event date：
2023.06

　

　
基板除去前後におけるPbTiO3エピタキシャル薄膜共振子のkt2ヒステリシスカーブ

國信聡太, 柳谷隆彦

第11回弾性波素子技術コンソーシアム研究会 (機械振興会館)

Presentation date： 2023.06

Event date：
2023.06

　

　
GHz帯パルスエコー法による音響ブラッグ反射層の横波特性の抽出

鈴木基嗣, 柳谷隆彦

第11回弾性波素子技術コンソーシアム研究会 (機械振興会館)

Presentation date： 2023.06

Event date：
2023.06

　

　
エピScAlN, MgZnO圧電薄膜/エピ音響ブラッグ反射器構造のSMR

渡海智, 柳谷隆彦

第11回弾性波素子技術コンソーシアム研究会 (機械振興会館)

Presentation date： 2023.06

Event date：
2023.06

　

　
(10-12)LiNbO3スパッタエピ薄膜のGHz帯擬似横波励振特性

内田拓希, 工藤慎也, 柳谷隆彦

第70回応用物理学会春季学術講演会

Presentation date： 2023.03

Event date：
2023.03

　

　
オフ角基板を用いたc軸傾斜エピPbTiO 3 薄膜の擬似横波励振特性

國信聡太, 柳谷隆彦

第70回応用物理学会春季学術講演会

Presentation date： 2023.03

Event date：
2023.03

　

　
Li0.65Nb0.3Ta0.05O3 スパッタエピ薄膜のGHz帯励振特性

中村華英, 工藤慎也, 柳谷隆彦

第70回応用物理学会春季学術講演会

Presentation date： 2023.03

Event date：
2023.03

　

　
オフ角サファイア単結晶基板上 c 軸傾斜MgZnO, ScAlN,エピタキシャル薄膜の擬似横波励振特性

小林栞, 岸大貴, 柳谷隆彦

第70回応用物理学会春季学術講演会

Presentation date： 2023.03

Event date：
2023.03

　

　
30 層分極反転共振子による圧電層と基板の音響分離

白岩和剛, 柳谷隆彦

第70回応用物理学会春季学術講演会

Presentation date： 2023.03

Event date：
2023.03

　

　
YbGaNおよびYbAlNエピタキシャル薄膜を用いたBAW共振子の特性

馮子泰, 李嵩, 柳谷隆彦

第70回応用物理学会春季学術講演会

Presentation date： 2023.03

Event date：
2023.03

　

　
基板付き薄膜共振子における共振反共振法用いた電極を含む電気機械結合係数keff2の直接評価

島野耀康, 矢田部浩平, 柳谷隆彦

第70回応用物理学会春季学術講演会

Presentation date： 2023.03

Event date：
2023.03

　

　
基板付き圧電薄膜構造の kt2評価における電極面積依存性の実験データとFEM解析データの比較

関崚, 清水祐樹, 柳谷隆彦

第70回応用物理学会春季学術講演会

Presentation date： 2023.03

Event date：
2023.03

　

　
エピ音響ブラッグ反射器およびエピScAlN, MgZnO圧電薄膜から成るSMR

渡海智, 柳谷隆彦

第70回応用物理学会春季学術講演会

Presentation date： 2023.03

Event date：
2023.03

　

　
オフ角 La-SrTiO3 基板を用いた c 軸傾斜エピ PbTiO3 薄膜の高い横波圧電性

國信聡太, 柳谷隆彦

圧電材料・デバイスシンポジウム2023

Presentation date： 2023.01

Event date：
2023.01

　

　
オフ角 Al2O3 基板を用いた LiNbO3 薄膜の c 軸傾斜エピタキシャル成長

工藤慎也, 柳谷隆彦

圧電材料・デバイスシンポジウム2023

Presentation date： 2023.01

Event date：
2023.01

　

　
オフ角サファイア基板を用いた ScAlN および MgZnO 薄膜の c 軸傾斜エピタキシャル成長と横波圧電特性

岸大貴, 柳谷隆彦

圧電材料・デバイスシンポジウム2023

Presentation date： 2023.01

Event date：
2023.01

　

　
圧電層と基板の音響分離を目指した 30 層分極反転共振子案

白岩和剛, 柳谷隆彦

圧電材料・デバイスシンポジウム2023

Presentation date： 2023.01

Event date：
2023.01

　

　
エピタキシャル金属薄膜から成る音響ブラッグ反射器を用いたフルエピタキシャル SMR の作製

渡海智, 柳谷隆彦

圧電材料・デバイスシンポジウム2023

Presentation date： 2023.01

Event date：
2023.01

　

　
基板付き薄膜共振子において通常の共振反共振法を用いる新しい kt2 評価法の提案

島野耀康, 矢田部浩平, 柳谷隆彦

圧電材料・デバイスシンポジウム2023

Presentation date： 2023.01

Event date：
2023.01

　

　
基板付き圧電薄膜の様々な kt2評価法における電極面積依存性

関崚, 清水祐樹, 近藤圭太, 柳谷隆彦

圧電材料・デバイスシンポジウム2023

Presentation date： 2023.01

Event date：
2023.01

　

　
GHz 帯パルスエコー法による音響ブラッグ反射層の横波機械的通過損失の測定

鈴木基嗣, 石井直輝, 近藤圭太, 柳谷隆彦

圧電材料・デバイスシンポジウム2023

Presentation date： 2023.01

Event date：
2023.01

　

　
YbGaNおよびYbAlNエピタキシャル薄膜共振子の特性

李嵩, 賈軍軍, 柳谷隆彦

電子情報通信学会超音波研究会

Presentation date： 2022.12

Event date：
2022.12

　

　
SiO2遅延層を用いたGHz帯パルスエコー法による音響ブラッグ反射層の機械的通過損失の測定

近藤圭太, 石井直輝, 鈴木基嗣, 柳谷隆彦

電子情報通信学会超音波研究会

Presentation date： 2022.12

Event date：
2022.12

　

　
LiNbO3スパッタエピ薄膜のGHz帯励振特性

工藤慎也, 柳谷隆彦

電子情報通信学会超音波研究会

Presentation date： 2022.12

Event date：
2022.12

　

　
c軸20°傾斜配向MgZnOエピタキシャル薄膜の擬似横波励振特性

岸大貴, 柳谷隆彦

電子情報通信学会超音波研究会

Presentation date： 2022.12

Event date：
2022.12

　

　
基板付き圧電薄膜の kt2評価における電極面積の影響

関崚, 清水祐樹, 近藤圭太, 柳谷隆彦

電子情報通信学会超音波研究会

Presentation date： 2022.12

Event date：
2022.12

　

　
基板付き薄膜共振子を用いたScAlN、ZnO、PZT圧電薄膜層のQ値抽出

清水祐樹, 柳谷隆彦

電子情報通信学会超音波研究会

Presentation date： 2022.12

Event date：
2022.12

　

　
Fingerprint imaging using GHz PbTiO3 epitaxial thin film ultrasonic transducer

K. Nakamura, Takahiko Yanagitani

2022 US-Japan Seminar on Dielectric and Piezoelectric Ceramics IEEE

Presentation date： 2022.11

Event date：
2022.11

　

　
kt2 hysteresis curves of PbTiO3 epitaxial film resonators before and after removing substrate

S. Kuninobu, Takahiko Yanagitani

2022 US-Japan Seminar on Dielectric and Piezoelectric Ceramics IEEE

Presentation date： 2022.11

Event date：
2022.11

　

　
Mechanical Q factor extraction of sputter-grown Pb(ZrxTi1-x)O3 epitaxial thin films without removing substrate

Y. Shimizu, Takahiko Yanagitani

2022 US-Japan Seminar on Dielectric and Piezoelectric Ceramics IEEE

Presentation date： 2022.11

Event date：
2022.11

　

　
Thickness shear mode BAW resonator based on epitaxial (10-12) LiNbO3 (11-20) AZO/(10-12) Al2O3

S. Kudo ,Takahiko Yanagitani

The 43rd Symposium on UltraSonic Electronics (USE2022)

Presentation date： 2022.11

Event date：
2022.11

　

　
Mechanical Q factor dependence on Zr/Ti ratio of sputter-grown PZT epitaxial thin films

Y. Shimizu,Takahiko Yanagitani

The 43rd Symposium on UltraSonic Electronics (USE2022)

Presentation date： 2022.11

Event date：
2022.11

　

　
Extraction of mechanical reflectance of acoustic Bragg reflector by GHz pulse echo technique

M. Suzuki,Takahiko Yanagitani

The 43rd Symposium on UltraSonic Electronics (USE2022)

Presentation date： 2022.11

Event date：
2022.11

　

　
Quasi-shear mode excitation of c-axis tilted MgZnO epitaxial thin film

H. Kishi,Takahiko Yanagitani

The 43rd Symposium on UltraSonic Electronics (USE2022)

Presentation date： 2022.11

Event date：
2022.11

　

　
Extracting Q factor of the piezoelectric thin films from film/high-Q substrate HBAR structure

M. Suzuki,Takahiko Yanagitani

2022 IEEE International Ultrasonics Symposium (IUS)

Presentation date： 2022.10

Event date：
2022.10

　

　
piezoelectric gyroscope with tilted c-axis ScAlN thin-films

Y. Koike and T. Yanagitani

2022 IEEE International Ultrasonics Symposium (IUS)

Presentation date： 2022.10

Event date：
2022.10

　

　
GHz electromechanical coupling hysteresis curves for ferroelectric ScAlN and epitaxial MgZnO films

N. Ishi,Takahiko Yanagitani

2022 IEEE International Ultrasonics Symposium (IUS)

Presentation date： 2022.10

Event date：
2022.10

　

　
Evaluation of mechanical Q factor of sputter-grown Pb(ZrxTi1-x)O3 epitaxial films without removing substrate

Y. Shimizu,Takahiko Yanagitani

2022 IEEE International Ultrasonics Symposium (IUS)

Presentation date： 2022.10

Event date：
2022.10

　

　
Grow of O-polar and Zn polar ferroelectric MgZnO thin films controlled by sputtering geometry

Y. Shimano,Takahiko Yanagitani

2022 IEEE Ultrasonic Symposium (IUS2022) IEEE

Presentation date： 2022.10

Event date：
2022.10

　

　
Experimental and theoretical investigation of enhanced electromechanical properties in YbAlN and YbGaN films

S. Li, Takahiko Yanagitani

2022 IEEE Ultrasonic Symposium (IUS2022) IEEE

Presentation date： 2022.10

Event date：
2022.10

　

　
IBAD c-axis parallel ZnO piezoelectric film stack for gyroscope applications

S. Kudo, Takahiko Yanagitani

2022 IEEE Ultrasonic Symposium (IUS2022) IEEE

Presentation date： 2022.10

Event date：
2022.10

　

　
Sputter epitaxial (101 ̅2) LiNbO3 film / (112 ̅0) AZO / (101 ̅2) Al2O3 shear mode thin film resonators

S. Kudo, Takahiko Yanagitani

2022 IEEE Ultrasonic Symposium (IUS2022) IEEE

Presentation date： 2022.10

Event date：
2022.10

　

　
Fabrication of high kt2 and k’352 Sc0.4Al0.6N thin films by RF magnetron sputtering

Y. Shimizu,Takahiko Yanagitani

2022 IEEE Ultrasonic Symposium (IUS2022) IEEE

Presentation date： 2022.10

Event date：
2022.10

　

　
Improvement of electromechanical coupling coefficient of piezoelectric LiNbO3 by doping praseodymium

K. Nakamura,Takahiko Yanagitani

2022 IEEE International Ultrasonics Symposium (IUS)

Presentation date： 2022.10

Event date：
2022.10

　

　
A method for evaluating sole mechanical properties of acoustic Bragg reflector by pulse echo technique in the GHz range

M. Suzuki,Takahiko Yanagitani

2022 IEEE Ultrasonic Symposium (IUS2022) IEEE

Presentation date： 2022.10

Event date：
2022.10

　

　
Quasi-shear mode electromechanical coupling coefficient of c-axis tilted MgZnO thin films

Y. Shimano,Takahiko Yanagitani

2022 IEEE Ultrasonic Symposium (IUS2022) IEEE

Presentation date： 2022.10

Event date：
2022.10

　

　
Fabrication of epitaxial piezoelectric layer on acoustic Bragg reflector using epitaxial sacrificial layer

S. Tokai, Takahiko Yanagitani

2022 IEEE Ultrasonic Symposium (IUS2022) IEEE

Presentation date： 2022.10

Event date：
2022.10

　

　
SMR-type piezoelectric transformer based on c-axis zig-zag polarization inverted ScAlN multilayer

K. Shiraiwa, Takahiko Yanagitani

2022 IEEE Ultrasonic Symposium (IUS2022) IEEE

Presentation date： 2022.10

Event date：
2022.10

　

　
Epitaxial PbTiO3 ultrasonic transducer for higher resolution of fingerprint imaging using GHz reflectometry of back side of substrate

Y. Koike, Takahiko Yanagitani

2022 IEEE Ultrasonic Symposium (IUS2022) IEEE

Presentation date： 2022.10

Event date：
2022.10

　

　
Power Durability Evaluation of Higher-order Mode Polarization-inverted ScAlN Thin Film Resonators

S. Shibata and T. Yanagitan

2022 IEEE International Ultrasonics Symposium (IUS)

Presentation date： 2022.10

Event date：
2022.10

　

　
Transversal type BAW filter based on polarization-inverted ScAlN multilayers

S. Shibata and T. Yanagitan

2022 IEEE International Ultrasonics Symposium (IUS)

Presentation date： 2022.10

Event date：
2022.10

　

　
Polarization inverted 2 layer ScAlN thin film resonator fabricated by applying external electric field

N. Ishi and T. Yanagitani

2022 IEEE International Ultrasonics Symposium (IUS)

Presentation date： 2022.10

Event date：
2022.10

　

　
基板付き薄膜構造からの圧電薄膜のQ値抽出における横方向伝搬の影響

清水祐樹, 柳谷隆彦

第92回応用物理学会秋季学術講演会

Presentation date： 2022.09

Event date：
2022.09

　

　
GHz帯パルスエコー法による音響多層膜単体の機械特性評価

鈴木基嗣, 石井直輝, 近藤圭太, 柳谷隆彦

第83回応用物理学会秋季学術講演会

Presentation date： 2022.09

Event date：
2022.09

　

　
(100)AgNbO3エピタキシャル薄膜/(100)STO基板のGHz帯超音波励振特性

浴田航平, 大森拳, 工藤慎也, 柳谷隆彦

第83回応用物理学会秋季学術講演会

Presentation date： 2022.09

Event date：
2022.09

　

　
分極反転多層デバイスに向けた極性制御MgZnO圧電薄膜の作製

島野耀康, 高柳真司, 柳谷隆彦

第83回応用物理学会秋季学術講演会

Presentation date： 2022.09

Event date：
2022.09

　

　
c軸10°傾斜配向ZnOエピタキシャル薄膜の成長と擬似横波励振特性

岸大貴, 柳谷隆彦

第83回応用物理学会秋季学術講演会

Presentation date： 2022.09

Event date：
2022.09

　

　
(10-12)LiNbO3スパッタエピ薄膜のGHz帯擬似横波励振特性

工藤慎也, 柳谷隆彦

第83回応用物理学会秋季学術講演会

Presentation date： 2022.09

Event date：
2022.09

　

　
耐電力性向上を目的とした分極反転ScAlN薄膜ブラッグ反射共振子

柴田真之, 柳谷隆彦

第83回応用物理学会秋季学術講演会

Presentation date： 2022.09

Event date：
2022.09

　

　
20%を超える高いkt2値のc軸配向Sc0.4Al0.6N薄膜および高いk´352値のc軸傾斜配向Sc0.4Al0.6N薄膜

内田拓希, 清水祐樹, 鈴木雅視, 高柳真司, 柳谷隆彦

第83回応用物理学会秋季学術講演会

Presentation date： 2022.09

Event date：
2022.09

　

　
基板付きの圧電薄膜と自立構造の圧電薄膜に対する各種 kt2値評価法の比較

関崚, 清水祐樹, 柳谷隆彦

第83回応用物理学会秋季学術講演会

Presentation date： 2022.09

Event date：
2022.09

　

　
ウルツ鉱型強誘電体薄膜におけるGHz帯kt2-Eヒステリシス特性

石井直輝, 小林栞, 柳谷隆彦

第83回応用物理学会秋季学術講演会

Presentation date： 2022.09

Event date：
2022.09

　

　
PZTエピタキシャル薄膜のZr/Ti比における機械的品質Qmの依存性

國信聡太, 清水祐樹, 柳谷隆彦

第83回応用物理学会秋季学術講演会

Presentation date： 2022.09

Event date：
2022.09

　

　
(10-12)LiNbO3エピタキシャル薄膜/(10-12)Al2O3基板のGHz帯向け擬似横波励振特性

工藤慎也, 柳谷隆彦

日本音響学会第148回

Presentation date： 2022.09

Event date：
2022.09

　

　
c軸10°傾斜配向ZnOエピタキシャル薄膜における擬似横波励振特性

岸大貴, 柳谷隆彦

日本音響学会第148回

Presentation date： 2022.09

Event date：
2022.09

　

　
c軸傾斜MgZnO薄膜における擬似横波励振特性

島野耀康, 柳谷隆彦

日本音響学会第148回

Presentation date： 2022.09

Event date：
2022.09

　

　
A method to evaluate the mechanical transmission loss of the sole Bragg reflector by using GHz pulse echo technique

N. ishi, Takahiko Yanagitani

IEEE IC-MAM 2022 IEEE

Presentation date： 2022.07

Event date：
2022.07

　

　
Epitaxial piezoelectric layer SMR fabricated using epitaxial sacrificial layer process

S. Kudo, Takahiko Yanagitani

IEEE IC-MAM 2022 IEEE

Presentation date： 2022.07

Event date：
2022.07

　

　
Thickness shear mode epitaxial (10¯("1" ) "2") LiNbO3 (11¯("2" )0) AZO/(10¯("1" ) "2") Al2O3 BAW resonator

S. Kudo, Takahiko Yanagitani

IEEE IC-MAM 2022 IEEE

Presentation date： 2022.07

Event date：
2022.07

　

　
Fingerprint imaging in GHz using PbTiO3 epitaxial piezoelectric thin films

Y. Koike, Takahiko Yanagitani

IEEE IC-MAM 2022 IEEE

Presentation date： 2022.07

Event date：
2022.07

　

　
「III-V族窒化物圧電薄膜へのYb添加効果」

賈軍軍、岩田直也、柳谷隆彦

第69回応用物理学会春季学術講演会

Presentation date： 2022.03

Event date：
2022.03

　

　
「外部電場によるScAlN薄膜の分極反転と圧電特性」

石井直輝、柳谷隆彦

第69回応用物理学会春季学術講演会

Presentation date： 2022.03

Event date：
2022.03

　

　
「スパッタ法による透明 ScAlN 薄板の成長」

李嵩、柳谷隆彦

第69回応用物理学会春季学術講演会

Presentation date： 2022.03

Event date：
2022.03

　

　
「音響ブラッグ反射器上へのエピ圧電層の形成」

渡海智、柳谷隆彦

第69回応用物理学会春季学術講演会

Presentation date： 2022.03

Event date：
2022.03

　

　
「c軸ジグザグ分極反転ScAlN薄膜を用いたBAW送受波型トランスバーサルフィルタ」

柴田真之、佐藤裕友、柳谷隆彦

第69回応用物理学会春季学術講演会

Presentation date： 2022.03

Event date：
2022.03

　

　
「PbTiO3 アレイトランスデューサの基板裏面での反射率測定によるGHz帯超音波イメージング」

小池由奈、柳谷隆彦

第69回応用物理学会春季学術講演会

Presentation date： 2022.03

Event date：
2022.03

　

　
「高Q基板を用いた圧電薄膜/基板構造からの圧電薄膜層のQ値抽出」

小林栞、柳谷隆彦

第69回応用物理学会春季学術講演会

Presentation date： 2022.03

Event date：
2022.03

　

　
「PbTiO3 薄膜共振子の基板除去前後における kt2 ヒステリシスカーブの比較」

國信聡太、柳谷隆彦

第69回応用物理学会春季学術講演会

Presentation date： 2022.03

Event date：
2022.03

　

　
「c軸傾斜配向MgZnO薄膜の作製」

岸大貴、柳谷隆彦

第69回応用物理学会春季学術講演会

Presentation date： 2022.03

Event date：
2022.03

　

　
「LiNbO3 エピタキシャル薄膜の共振特性」

工藤慎也、柳谷隆彦

第69回応用物理学会春季学術講演会

Presentation date： 2022.03

Event date：
2022.03

　

　
「c軸傾斜反転ScAlN薄膜を用いたブラッグ反射器型圧電トランス」

白岩和剛、柳谷隆彦

第69回応用物理学会春季学術講演会

Presentation date： 2022.03

Event date：
2022.03

　

　
「超音波顕微鏡による音響ブラッグ反射層の機械的通過損失の測定」

鈴木基嗣、柳谷隆彦

第69回応用物理学会春季学術講演会

Presentation date： 2022.03

Event date：
2022.03

　

　
「c軸傾斜配向ScAlN薄膜を用いた複素反射法による生体物質の相互作用の検出」

茂木彩音、柳谷隆彦

第69回応用物理学会春季学術講演会

Presentation date： 2022.03

Event date：
2022.03

　

　
「GHz 帯パルスエコー法による音響ブラッグ反射層単体の機械的通過特性の評価」

近藤圭太、石井直輝、柳谷隆彦

圧電材料・デバイスシンポジウム2022

Presentation date： 2022.01

Event date：
2022.01

　

　
「(0001)YbAlN／(0001)Ti／(0001)Al2 O3 エピタキシャル薄膜共振子」

李嵩、柳谷隆彦

圧電材料・デバイスシンポジウム2022

Presentation date： 2022.01

Event date：
2022.01

　

　
「外部電場により分極反転処理した強誘電性 ScAlN 薄膜共振子」

石井直輝、岩田直也、柳谷隆彦

圧電材料・デバイスシンポジウム2022

Presentation date： 2022.01

Event date：
2022.01

　

　
「高 Q 基板を用いた基板付き薄膜共振子からの圧電薄膜層のQ 値抽出」

清水祐樹、小林栞、柳谷隆彦

圧電材料・デバイスシンポジウム2022

Presentation date： 2022.01

Event date：
2022.01

　

　
「厚みすべりモード c 軸ジグザグ ScAlN 積層を用いたブラッグ反射器型圧電トランス」

白岩和剛、佐藤裕友、柳谷隆彦

圧電材料・デバイスシンポジウム2022

Presentation date： 2022.01

Event date：
2022.01

　

　
「PbTiO3 エピ薄膜の基板裏面反射率測定を用いたGHz帯音響イメージングの高分解能化」

佐藤裕友、柳谷隆彦

圧電材料・デバイスシンポジウム2022

Presentation date： 2022.01

Event date：
2022.01

　

　
「スパッタによる透明 ScAlN 薄板の成長と10 MHz帯トランスデューサへの応用」

岩田直也、柳谷隆彦

圧電材料・デバイスシンポジウム2022

Presentation date： 2022.01

Event date：
2022.01

　

　
「エピ犠牲層を用いた音響ブラッグ反射器上へのエピ圧電層の形成」

渡海智、柳谷隆彦

圧電材料・デバイスシンポジウム2022

Presentation date： 2022.01

Event date：
2022.01

　

　
「耐電力性向上に向けた高次モード分極反転ScAlN薄膜の作製およびサブ W 耐電力性の評価」

柴田真之、柳谷隆彦

圧電材料・デバイスシンポジウム2022

Presentation date： 2022.01

Event date：
2022.01

　

　
「分極反転 ScAlN 薄膜を用いたBAW送受波型トランスバーサルフィルタ」

泉航太、柳谷隆彦

圧電材料・デバイスシンポジウム2022

Presentation date： 2022.01

Event date：
2022.01

　

　
「GHz 帯 PbTiO3 エピ薄膜を用いた基板裏面での反射率測定によるイメージング」

佐藤裕友、柳谷隆彦

The 42th Symposium on Ultrasonic Electronics (USE 2021)

Presentation date： 2021.10

Event date：
2021.10

　

　
「ブラッグ反射器を用いた厚みすべりモード c 軸ジグザグ ScAlN 積層型圧電トランス」

白岩和剛、柳谷隆彦

第５０回ＥＭシンポジウム

Presentation date： 2021.09

Event date：
2021.09

　

　
「自立構造 PbTiO3薄膜共振子における kt2ヒステリシスカーブの測定」

國信聡太、柳谷隆彦

第５０回ＥＭシンポジウム

Presentation date： 2021.09

Event date：
2021.09

　

　
「5GHz 帯に向けた自立構造 ScAlN エピタキシャル薄膜共振子」

関崚、柳谷隆彦

第５０回ＥＭシンポジウム

Presentation date： 2021.09

Event date：
2021.09

　

　
“Experimental and Theoretical Investigation of kt2 and Velocity in YbGaN Films by DFT,”

Y. Koike, J. Jia, M. Suzuki,,Takahiko Yanagitani,

2021 IEEE International Ultrasonics Symposium (IUS)

Presentation date： 2021.09

Event date：
2021.09

　

　
“GHz BAW Piezoelectric Transformers for Passive Voltage Amplification Using the Epitaxial ZnO Thin Films”

H. Kishi, S. Kobayashi,,Takahiko Yanagitani,

2021 IEEE International Ultrasonics Symposium (IUS)

Presentation date： 2021.09

Event date：
2021.09

　

　
“Detection of Protein Binding by Shear Mode Ultrasonic Reflection Coefficients Using c-Axis Tilted ScAlN Film Above 100MHz”

Y. Miho,,Takahiko Yanagitani,

2021 IEEE International Ultrasonics Symposium (IUS)

Presentation date： 2021.09

Event date：
2021.09

　

　
A Method for Evaluating Acoustic Bragg Reflector by Ultrasonic Microscope

N. Ishi, K. Kondo, T. Yanagitani

2021 IEEE International Ultrasonics Symposium (IUS)

Presentation date： 2021.09

Event date：
2021.09

　

　
Epitaxial PbTiO3 Ultrasonic Transducer for Fingerprint Imaging in the Giga-Hertz Range Using the Reflectometry of Back Side of Substrate

Y. Sato, T. Yanagitani

2021 IEEE International Ultrasonics Symposium (IUS)

Presentation date： 2021.09

Event date：
2021.09

　

　
“Thick Epitaxial ScAlN Film/ (111) Pt/ (0001) Sapphire Ultrasonic Transducer in the 30 MHz”

N. Iwata,,Takahiko Yanagitani,

2021 IEEE International Ultrasonics Symposium (IUS)

Presentation date： 2021.09

Event date：
2021.09

　

　
“Precise Extraction of kt2 for Piezoelectric Film/Substrate Structure by Unembedding Parasitic Inductance”

K. Kondo,,Takahiko Yanagitani,

2021 IEEE International Ultrasonics Symposium (IUS)

Presentation date： 2021.09

Event date：
2021.09

　

　
“Effect of Epitaxial Stress in PbTiO3 Epitaxial Film Resonators on kt2 Hysteresis Curve”

S. Kuninobu, N. Iwata,,Takahiko Yanagitani,

2021 IEEE International Ultrasonics Symposium (IUS)

Presentation date： 2021.09

Event date：
2021.09

　

　
“0.1 mm Thick ScAlN Film: Application to MHz Transducer and Precise Lattice Constant Measurement”

N. Bai,,Takahiko Yanagitani,

2021 IEEE International Ultrasonics Symposium (IUS)

Presentation date： 2021.09

Event date：
2021.09

　

　
“Comparison of the kt2 Extraction Methods of Piezoelectric Films in Film/Substrate Structure and SelfStanding Film Structure”

Y. Shimizu, K. Kondo,,Takahiko Yanagitani,

2021 IEEE International Ultrasonics Symposium (IUS)

Presentation date： 2021.09

Event date：
2021.09

　

　
“Effect of Lateral Propagation on Extraction of Mechanical Q Factor of the Piezoelectric Films Without Removing Substrate”

Y. Shimizu,,Takahiko Yanagitani,

2021 IEEE International Ultrasonics Symposium (IUS)

Presentation date： 2021.09

Event date：
2021.09

　

　
誘電率の異なる材料を組み合わせた圧電薄膜トランスの作製

岸大貴、木下紗里那、泉航太、柳谷隆彦

第68回応用物理学会春季学術講演会

Presentation date： 2021.03

Event date：
2021.03

　

　
エピタキシャルPbTiO3 自立薄膜共振子のGHz 帯圧電特性

渡海智、國信総太、柳谷隆彦

第68回応用物理学会春季学術講演会

Presentation date： 2021.03

Event date：
2021.03

　

　
MgおよびCaドーピングによるZnO薄膜のUHF帯電気機械結合係数kt2の向上

泉航太、柳谷隆彦

第68回応用物理学会春季学術講演会

Presentation date： 2021.03

Event date：
2021.03

　

　
基板付き圧電薄膜構造におけるkt2評価法に寄生インダクタンスが与える影響

山中恵理、近藤圭太、龍見亮汰、柳谷隆彦

第68回応用物理学会春季学術講演会

Presentation date： 2021.03

Event date：
2021.03

　

　
c軸傾斜配向ScAlN薄膜の横波反射率測定による液体の粘性評価

山下美穂、木下紗里那、柳谷隆彦

第68回応用物理学会春季学術講演会

Presentation date： 2021.03

Event date：
2021.03

　

　
PbTiO3エピタキシャル薄膜の基板裏面における反射率測定を用いたGHz帯指紋イメージング

佐藤裕友、石井直輝、柳谷隆彦

第68回応用物理学会春季学術講演会

Presentation date： 2021.03

Event date：
2021.03

　

　
イオン照射を用いたScAlN薄膜の極性制御

工藤慎也、天野凌輔、柳谷隆彦

第68回応用物理学会春季学術講演会

Presentation date： 2021.03

Event date：
2021.03

　

　
基板付き圧電薄膜構造における変換損失kt2評価法に寄生インダクタンスが与える影響

近藤圭太、龍見亮汰、柳谷隆彦

圧電材料・デバイスシンポジウム2021

Presentation date： 2021.01

Event date：
2021.01

　

　
基板付きAlN、ScAlN、ZnO薄膜共振子の機械的Qm値の抽出

清水祐樹、木下紗里那、岩田直也、柳谷隆彦

圧電材料・デバイスシンポジウム2021

Presentation date： 2021.01

Event date：
2021.01

　

　
AlNとScAlN薄膜共振子の非線形性に起因する周波数シフトとDCバイアス時の格子ひずみの比較

五月女巧、柳谷隆彦

圧電材料・デバイスシンポジウム2021

Presentation date： 2021.01

Event date：
2021.01

　

　
厚膜成長と粉体化により応力を緩和したScAlNにおける結晶構造のSc濃度依存性

白寧蕊、柳谷隆彦

圧電材料・デバイスシンポジウム2021

Presentation date： 2021.01

Event date：
2021.01

　

　
基板へのイオン照射を抑制したスパッタ法によるZnO 薄膜形成と結晶性および圧電性への影響

富永浩平、高柳真司、柳谷隆彦

圧電材料・デバイスシンポジウム2021

Presentation date： 2021.01

Event date：
2021.01

　

　
円管構造 SH-SAW センサに向けた c 軸平行配向 ZnO 薄膜の石英ガラス管への成膜

若林拓也、高柳真司、柳谷隆彦

圧電材料・デバイスシンポジウム2021

Presentation date： 2021.01

Event date：
2021.01

　

　
低圧スパッタ成膜で増大する負イオン照射と ScAlN 薄膜の結晶性および圧電性の劣化

冨永卓海、高柳真司、柳谷隆彦

圧電材料・デバイスシンポジウム2021

Presentation date： 2021.01

Event date：
2021.01

　

　
自立薄膜共振子の作製を目指したPbTiO3エピタキシャル薄膜のMgO下地エッチング

國信聡太、岩田直也、柳谷隆彦

圧電材料・デバイスシンポジウム2021

Presentation date： 2021.01

Event date：
2021.01

　

　
GHz帯PbTiO3エピ薄膜の基板裏面における反射率差を用いた指紋イメージング

佐藤裕友、柳谷隆彦

圧電材料・デバイスシンポジウム2021

Presentation date： 2021.01

Event date：
2021.01

　

　
ウェハー状態の圧電薄膜共振子の基板内音響損失を除いた変換損 kt2 導出法

龍見亮汰、柳谷隆彦

The 41th Symposium on Ultrasonic Electronics (USE 2020)

Presentation date： 2020.11

Event date：
2020.11

　

　
円管構造 SH-SAW センサに向けた c 軸平行配向 ZnO 薄膜の石英ガラス管回転成膜

若林拓也、髙柳真司、柳谷隆彦

The 41th Symposium on Ultrasonic Electronics (USE 2020)

Presentation date： 2020.11

Event date：
2020.11

　

　
スパッタ成膜中に基板へ照射されるイオンの抑制をした ZnO 薄膜の形成と圧電性への影響

富永浩平、髙柳真司、柳谷隆彦

The 41th Symposium on Ultrasonic Electronics (USE 2020)

Presentation date： 2020.11

Event date：
2020.11

　

　
低圧スパッタ成膜において増大する負イオン照射が ScAlN 薄膜の圧電性に及ぼす影響

冨永卓海、髙柳真司、柳谷隆彦

The 41th Symposium on Ultrasonic Electronics (USE 2020)

Presentation date： 2020.11

Event date：
2020.11

　

　
AlNとScAlNにおける非線形性に起因するDCバイアス時の周波数シフトおよび格子ひずみの比較

五月女巧、柳谷隆彦

電子情報通信学会超音波研究会

Presentation date： 2020.11

Event date：
2020.11

　

　
低圧スパッタ成膜で増大する負イオン照射がScAlN薄膜の結晶性と圧電性に及ぼす影響

冨永卓海、髙柳真司、柳谷隆彦

電子情報通信学会超音波研究会

Presentation date： 2020.11

Event date：
2020.11

　

　
レクテナ昇圧素子に向けたScAlN/SiO2積層型圧電薄膜トランス

岸大貴、泉航太、木下紗里那、柳谷隆彦

第４９回ＥＭシンポジウム

Presentation date： 2020.10

Event date：
2020.10

　

　
GHz帯PZT系エピ薄膜トランスデューサを用いた指紋イメージング

佐藤裕友、柳谷隆彦

第４９回ＥＭシンポジウム

Presentation date： 2020.10

Event date：
2020.10

　

　
ZnO薄膜のMgおよびCaドーピングによるUHF帯電気機械結合係数kt2の向上

泉航太、柳谷隆彦

第４９回ＥＭシンポジウム

Presentation date： 2020.10

Event date：
2020.10

　

　
基板付き薄膜共振子の基板内損失を含まない新規kt2評価法と従来法の比較

龍見亮汰、柳谷隆彦

電子情報通信学会超音波研究会

Presentation date： 2020.09

Event date：
2020.09

　

　
ScAlスパッタターゲットから生じる負イオンがScAlN圧電薄膜の結晶配向性や電気機械結合係数に及ぼす影響

木原流唯、高柳真司、柳谷隆彦

電子情報通信学会超音波研究会

Presentation date： 2020.09

Event date：
2020.09

　

　
レクテナ昇圧素子に向けた傾斜反転ScAlN圧電薄膜トランス

木下紗里那、柳谷隆彦

電子情報通信学会超音波研究会

Presentation date： 2020.09

Event date：
2020.09

　

　
Giga-Hertz Piezoelectric Epitaxial PZT/La-SrTiO3 Transducer for the Application of Fingerprint Imaging

Yusuke Sato, Takahiko Yanagitani

2020 IEEE International Ultrasonics Symposium (IUS) IEEE

Presentation date： 2020.09

Event date：
2020.09

　

　
Extracting mechanical Q factor of the pure AlN, ScAlN, and ZnO films without etching substrate

Naoya Iwata, Sarina Kinoshita, Takahiko Yanagitani

2020 IEEE International Ultrasonics Symposium (IUS) IEEE

Presentation date： 2020.09

Event date：
2020.09

　

　
ScAlN Nano-Rods Structure Thin Film Grown by a Self-Shadowing Oblique Sputtering for High Electromechanical Coupling Transducer Applications

Takumi Soutome, Takahiko Yanagitani

2020 IEEE International Ultrasonics Symposium (IUS) IEEE

Presentation date： 2020.09

Event date：
2020.09

　

　
c-Axis oriented ScAlN/SiO2 multilayer BAW transformer for rectifying antenna applications

Kota Izumi, Takahiko Yanagitani

2020 IEEE International Ultrasonics Symposium (IUS) IEEE

Presentation date： 2020.09

Event date：
2020.09

　

　
Accurate Extraction of kt2 of Piezoelectric Film/Substrate Structure by Conversion Loss Method Subtracting Experimental Acoustic Losses in the Substrate

Ryota Tatsumi, Takahiko Yanagitani

2020 IEEE International Ultrasonics Symposium (IUS) IEEE

Presentation date： 2020.09

Event date：
2020.09

　

　
Deterioration in the piezoelectric property of ScAlN thin films by negative ion bombardment increased in low-pressure sputtering deposition

Takumi Tominaga, Shinji Takayanagi, Takahiko Yanagitani

2020 IEEE International Ultrasonics Symposium (IUS) IEEE

Presentation date： 2020.09

Event date：
2020.09

　

　
Extraction of kt2 of piezoelectric film/substrate structure by conversion loss derived by electromagnetic signal including no acoustic losses

Ryota Tatsumi, Takahiko Yanagitani

2020 IEEE International Ultrasonics Symposium (IUS) IEEE

Presentation date： 2020.09

Event date：
2020.09

　

　
Self-Standing FBAR Transformer based on Shear Mode Zig-zag ScAlN Multilayer for Rectenna Application

Sarina Kinoshita, Takahiko Yanagitani

2020 IEEE International Ultrasonics Symposium (IUS) IEEE

Presentation date： 2020.09

Event date：
2020.09

　

　
Zig-zag ScAlN multilayer SMR for high power BAW fileter application such as RF base station

Yusuke Sato, Takahiko Yanagitani

2020 IEEE International Ultrasonics Symposium (IUS) IEEE

Presentation date： 2020.09

Event date：
2020.09

　

　
Experimental and theoretical investigation of kt2and mechanical quality factor Qm in YbAlN films using DFT

Naoya Iwata, Sarina Kinoshita, Junjun Jia, Masashi Suzuki, Takahiko Yanagitani

2020 IEEE International Ultrasonics Symposium (IUS) IEEE

Presentation date： 2020.09

Event date：
2020.09

　

　
Enhancement of GHz electromechanical coupling coefficient kt2 of MgZnO and CaZnO thin film BAW resonators

Kota Izumi, Takahiko Yanagitani

2020 IEEE International Ultrasonics Symposium (IUS) IEEE

Presentation date： 2020.09

Event date：
2020.09

　

　
GHz BAW Piezoelectric Transformers with High Voltage Gain using the Combination of High and Low Dielectric Constant Thin Films

Sarina Kinoshita, Takahiko Yanagitani

2020 IEEE International Ultrasonics Symposium (IUS) IEEE

Presentation date： 2020.09

Event date：
2020.09

　

　
Multilayer Piezoelectric ScAlN Film Transducers for Ultrasonic Microscopy in the VHF Range

Yusuke Korai, Masashi Suzuki, Takahiko Yanagitani

2020 IEEE International Ultrasonics Symposium (IUS)

Presentation date： 2020.09
Effect of Negative-Ion-Bombardment Suppression by Applying Voltage to Grids Set Between Substrate and Sputtering Target During Sputtering Deposition on Crystalline Orientation of ZnO Film

Kohei Tominaga, Shinji Takayanagi, Takahiko Yanagitani

2020 IEEE International Ultrasonics Symposium (IUS)

Presentation date： 2020.09
Improvement of Crystallization and Shear-Mode Electromechanical Coupling of c-Axis-ParallelOriented ZnO Film by Annealing Treatment

Shinji Takayanagi, Kanae Kimoto, Takahiko Yanagitani

2020 IEEE International Ultrasonics Symposium (IUS)

Presentation date： 2020.09
Measurement of Time Response of Electrical Properties in Thickness Shear Mode Resonator with Liquid Loadings

Mao Watabe, Shinji Takayanagi, Takahiko Yanagitani

2020 IEEE International Ultrasonics Symposium (IUS)

Presentation date： 2020.09
A Method for Extracting Mechanical Q Factor of the Piezoelectric Film without Etching Substrate

Sarina Kinoshita, Takahiko Yanagitani

2019 IEEE International Ultrasonics Symposium (IUS) IEEE

Presentation date： 2019.10

Event date：
2019.10

　

　
Shear Mode Polarity Inverted ScAlN Multilayer for Application to BAW Transformer in Rectifying Antenna

Sarina Kinoshita, Takahiko Yanagitani

2019 IEEE International Ultrasonics Symposium (IUS) IEEE

Presentation date： 2019.10

Event date：
2019.10

　

　
A method to estimate kt2 of piezoelectric films from the change of lattice strain by XRD without removing substrate

Takumi Soutome, Takahiko Yanagitani

2019 IEEE International Ultrasonics Symposium (IUS) IEEE

Presentation date： 2019.10

Event date：
2019.10

　

　
Improvement of c-Axis Parallel Orientaition of ZnO film on Silica Glass Pipes with Various Diameters for SH-SAW Pipe Sensor

Takuya Wakabayashi, Shinji Takayanagi, Mami Matukawa, Yuta Takamura, Takahiko Yanagitani

2019 IEEE International Ultrasonics Symposium (IUS) IEEE

Presentation date： 2019.10

Event date：
2019.10

　

　
Effect of negative ions generation from sputtering target on crystalline orientation and kt2 of ScAlN thin films

Rui Kihara, Shinji Takayanagi, Takahiko Yanagitani

2019 IEEE International Ultrasonics Symposium (IUS) IEEE

Presentation date： 2019.10

Event date：
2019.10

　

　
Ion beam induced a-axis in-plane oriented c-axis oriented AlN thin film growth for high-Q BAW resonator application

Chiaki Masamune, Takahiko Yanagitani

2019 IEEE International Ultrasonics Symposium (IUS) IEEE

Presentation date： 2019.10

Event date：
2019.10

　

　
Frequency-switchable polarity-inverted BAW resonators based on electric-field-induced piezoelectric PMN-PT/PZT epitaxial film stacks

Takahiro Shimidzu, Takahiko Yanagitani

Journal of Applied Physics AIP Publishing

Presentation date： 2019.09

Event date：
2019.09

　

　
Frequency-switchable polarity-inverted BAW resonators based on PZT/PTO epitaxial films using difference in coercive field

Takahiro Shimidzu, Takeshi Mori, Takahiko Yanagitani

Applied Physics Letters AIP Publishing

Presentation date： 2019.05

Event date：
2019.05

　

　
Al金属ターゲットへのSc埋め込みの有無によるScAlN薄膜音響共振子の結晶化度の違いと圧電特性

木原流唯, 高柳真司, 柳谷隆彦

電子情報通信学会総合大会

Presentation date： 2019.03
共振周波数比法を用いた基板付き薄膜共振子の電極付きkeff2の抽出

龍見亮汰, 戸塚誠, 柳谷隆彦

電子情報通信学会総合大会

Presentation date： 2019.03
SH型SAWパイプセンサの作製に向けた石英ガラス管へのc軸平行配向ZnO膜の形成

篁佑太, 高柳真司, 柳谷隆彦, 松川真美

第66回応用物理学会春季学術講演会

Presentation date： 2019.03
溶融および焼結ScAl合金ターゲットを用いた高品質なScAlN薄膜の作製

白寧蕊, 唐澤嶺, 高柳真司, 今川誠, 森坂啓介, 鈴木雄, 柳谷隆彦

第66回応用物理学会春季学術講演会

Presentation date： 2019.03
ScAlN自立薄板を用いた30-40MHz帯振動子

正宗千明, 唐澤嶺, 柳谷隆彦

第66回応用物理学会春季学術講演会

Presentation date： 2019.03
基板付き圧電薄膜の高次モード間共振周波数比を用いたFBARの電極考慮keff2抽出

戸塚誠, 柳谷隆彦

圧電材料・デバイスシンポジウム2019

Presentation date： 2019.01
基板付き圧電薄膜の電気機械結合係数抽出時における電極サイズの影響

山中恵理, 戸塚誠, 木下紗里那, 柳谷隆彦

圧電材料・デバイスシンポジウム2019

Presentation date： 2019.01
ScAlN自立薄板を用いた30-40MHz帯振動子

天野凌輔, 木下紗里那, 廣芝伸哉, 柳谷隆彦

圧電材料・デバイスシンポジウム2019

Presentation date： 2019.01
スパッタ成膜中の負イオン照射抑制によるScAlN薄膜の圧電性向上

高柳真司, 柳谷隆彦

圧電材料・デバイスシンポジウム2019

Presentation date： 2019.01
圧電薄膜デバイスと基板の選択

和佐清孝, 清水貴博, 足立秀明, 吉田慎哉, 柳谷隆彦, 田中秀治

圧電材料・デバイスシンポジウム2019

Presentation date： 2019.01
「常誘電相PMN-PT/強誘電相PZT分極反転エピ膜音響共振子の周波数スイッチング特性」

野田隆太, 清水貴博, 柳谷隆彦

電子回路研究会

Presentation date： 2018.12
横波モードのc 軸傾斜配向 ScAlN 薄膜 / 音響多層膜反射器共振子を用いた UHF帯液体粘性評価

五月女巧, 山川愉生, 唐澤嶺, 柳谷隆彦

電子回路研究会

Presentation date： 2018.12
極性反転ZnO圧電多層構造を用いた高効率な超音波トランスデューサ

間島毅, 清水貴博, 柳谷隆彦

電子回路研究会

Presentation date： 2018.12
A new electromechanical coupling coefficient extraction method of as-grown film/wafer structure by using the ratio of overtone mode resonant frequencies

The 39th Symposium on Ultrasonic Electronics (USE 2018)

Presentation date： 2018.10
圧電トランス薄膜音響共振子による電波発電

柳谷隆彦 [Invited]

第4回分科会ワークショップ「革新的エナジー・ハーベスティングに向けた材料・デバイス技術」

Presentation date： 2018.03
c 軸傾斜配向 ScAlN 薄膜 / 音響多層膜構造の共振子を用いた 400MHz 付近における液体粘性評価

山川愉生, 五月女巧, 唐澤嶺, 柳谷隆彦

第 39 回超音波エレクトロニクスの基礎と応用に関するシンポジウム

Presentation date： 2018
c 軸傾斜配向すべりモード ScAlN 薄膜共振子を用いた生体反応検出

矢崎花, 五月女巧, 唐澤嶺, 高柳真司, 吉田憲司, 柳谷隆彦

第 39 回超音波エレクトロニクスの基礎と応用に関するシンポジウム

Presentation date： 2018
PZT エピタキシャル厚膜を用いた 80 MHz 帯の超音波トランスデューサ

松田友佳, 清水貴博, 柳谷隆彦

第 39 回超音波エレクトロニクスの基礎と応用に関するシンポジウム

Presentation date： 2018
大きな圧電性を持つ ScAlN 自立薄板を用いた 30?40 MHz 帯振動子

正宗千明, 唐澤嶺, 柳谷隆彦

第 39 回超音波エレクトロニクスの基礎と応用に関するシンポジウム

Presentation date： 2018
周波数スイッチナブルフィルタを目指した分極反転 PZT/PbTiO3エピタキシャル薄膜共振子

清水貴博, 森剛志, 柳谷隆彦

第 39 回超音波エレクトロニクスの基礎と応用に関するシンポジウム

Presentation date： 2018
大きな電気機械結合係数 (kt 2 =22%) を持つ ScAlN 薄膜

白寧蕊, 正宗千明, 唐澤嶺, 柳谷隆彦

第 39 回超音波エレクトロニクスの基礎と応用に関するシンポジウム

Presentation date： 2018
溶融及び焼結 ScAl 合金ターゲットからの負イオン照射が ScAlN 薄膜成長へ及ぼす影響

遠藤結佳, 唐澤嶺, 高柳真司, 今川誠, 森坂啓介, 鈴木雄, 柳谷隆彦

第 39 回超音波エレクトロニクスの基礎と応用に関するシンポジウム

Presentation date： 2018
基板付き薄膜構造における高次モード間共振周波数比を用いた圧電薄膜の kt 2 評価法

戸塚誠, 柳谷隆彦

第 39 回超音波エレクトロニクスの基礎と応用に関するシンポジウム

Presentation date： 2018
「サファイア基板上への高角度c軸傾斜ScAlN膜の作製と弾性表面波伝搬特性」

徳田翔平, 高柳真司, 松川真美, 柳谷隆彦

圧電材料・デバイスシンポジウム2018

Presentation date： 2018
「スパッタ成膜中にSc金属から発生した負イオンの照射によるScAlN薄膜の結晶配向性および圧電性の劣化」

高柳真司, 柳谷隆彦

圧電材料・デバイスシンポジウム2018

Presentation date： 2018
「厚みすべりモード薄膜共振子の液体負荷時における周波数変化及び減衰の検討」

岩永陸弥, 高柳真司, 松川真美, 柳谷隆彦

圧電材料・デバイスシンポジウム2018

Presentation date： 2018
「PZT薄膜とバルク圧電材料」

和佐清孝, 清水貴博, 足立秀明, 吉田慎哉, 柳谷隆彦, 田中秀治

圧電材料・デバイスシンポジウム2018

Presentation date： 2018
「スパッタ法により作製したGHz帯のPb(ZrxTi1-x)O3エピ膜にMPB特性は現れるか？」

野田隆太, 清水貴博, 和佐清孝, 柳谷隆彦

圧電材料・デバイスシンポジウム2018

Presentation date： 2018
「極性反転ウルツ鉱系圧電薄膜を用いた高効率トランスデューサ」

間島毅, 清水貴博, 柳谷隆彦

圧電材料・デバイスシンポジウム2018

Presentation date： 2018
「周波数スイッチナブルな常誘電相PMN-PT/強誘電相PZT分極反転エピタキシャル薄膜共振子」

清水貴博, 柳谷隆彦

圧電材料・デバイスシンポジウム2018

Presentation date： 2018
「擬似すべりモードc軸傾斜配向ScAlN薄膜を用いた複素反射率測定による液体試料のUHF帯粘弾性評価」

山川愉生, 唐澤嶺, 柳谷隆彦

圧電材料・デバイスシンポジウム2018

Presentation date： 2018
「c軸ジグザグ配向ScAlN圧電トランス薄膜共振子のレクテナ昇圧回路への応用検討」

唐澤嶺, 柳谷隆彦

圧電材料・デバイスシンポジウム2018

Presentation date： 2018
「高次モード間共振周波数比を用いた基板付き薄膜共振子からの電気機械結合係数の抽出」

戸塚誠, 柳谷隆彦

圧電材料・デバイスシンポジウム2018

Presentation date： 2018
「圧電トランス薄膜音響共振子による電波発電」

柳谷隆彦

第4回分科会ワークショップ「革新的エナジー・ハーベスティングに向けた材料・デバイス技術」

Presentation date： 2018
「電子ビーム真空溶融により合成したScAl合金スパッタターゲットを用いた高品質ScAlN薄膜の成長」

遠藤結佳, 佐野耕平, 唐澤嶺, 柳谷隆彦

第65回応用物理学会春季学術講演会

Presentation date： 2018
「高い圧電性を持つPZT厚膜を用いた80 MHz帯高効率トランスデューサ」

松田友佳, 清水貴博, 柳谷隆彦

第65回応用物理学会春季学術講演会

Presentation date： 2018
「90?mScAlN厚膜を用いた40MHz帯トランスデューサ」

正宗千明, 佐野耕平, 柳谷隆彦

第65回応用物理学会春季学術講演会

Presentation date： 2018
「基本モードと3次モードの共振周波数比を用いた基板付き薄膜の電気機械結合係数kt2の評価法」

戸塚誠, 柳谷隆彦

第65回応用物理学会春季学術講演会

Presentation date： 2018
「極性反転ZnO圧電薄膜を用いた高効率トランスデューサ」

間島毅, 柳谷隆彦

第65回応用物理学会春季学術講演会

Presentation date： 2018
「ScAlN/ZnO極性反転構造を用いた高次モードトランスデューサの水中放射特性」「基本モード/高次モード切替可能な常誘電相PMN-PT/強誘電相PZT分極反転エピ膜共振子」

清水貴博, 柳谷隆彦

第65回応用物理学会春季学術講演会

Presentation date： 2018
「c軸傾斜配向ScAlN薄膜を用いた擬似すべりモード基板付き共振子による液体試料のMHz帯-GHz帯にわたる粘性評」

山川愉生, 唐澤嶺, 柳谷隆彦

第65回応用物理学会春季学術講演会

Presentation date： 2018
「c軸傾斜配向ScAlN薄膜を用いた横波超音波の斜入射による液体試料のVHF帯粘弾性評価」

山川愉生, 柳谷隆彦

第65回応用物理学会春季学術講演会

Presentation date： 2018
「低角スパッタ粒子入射を用いたc軸傾斜反転ジグザグScAlN圧電薄膜の成長とレクテナ昇圧素子への応用検討」

唐澤嶺, 柳谷隆彦

第65回応用物理学会春季学術講演会

Presentation date： 2018
「最近のBAWデバイス(FBAR)の薄膜材料と評価手法」

柳谷隆彦

第65回応用物理学会春季学術講演会

Presentation date： 2018
「周波数スイッチナブルフィルタを目指した常誘電相PMN-PT/強誘電相PZT分極反転エピ膜音響共振子」

清水貴博, 柳谷隆彦

電子情報通信学会超音波研究会

Presentation date： 2018
「レクテナ昇圧素子への応用を目指したc軸ジグザグ配向ScAlN多層圧電薄膜共振子」

唐澤嶺, 柳谷隆彦

電子情報通信学会超音波研究会

Presentation date： 2018
「PZT エピ厚膜および ScAlN 厚膜を用いた 30-90 MHz 帯トランスデューサ」

正宗千明, 松田友佳, 唐澤嶺, 清水貴博, 柳谷隆彦

第４７回EMシンポジウム

Presentation date： 2018
「溶融および焼結 ScAl 合金スパッタターゲットから発生する負イオンが ScAlN 薄膜の成長に及ぼす影響」

唐澤嶺, 遠藤結佳, 高柳真司, 今川誠, 森坂啓介, 鈴木雄, 柳谷隆彦

第４７回EMシンポジウム

Presentation date： 2018
「基板付き圧電薄膜の機械的品質係数 Q 値評価の検討」

木下紗里那, 戸塚誠, 唐澤嶺, 柳谷隆彦

第４７回EMシンポジウム

Presentation date： 2018
「基本モード/3 次モード間共振周波数比を用いた基板付き薄膜構造における圧電薄膜の kt抽出法と従来法との比較」

戸塚誠, 柳谷隆彦

第４７回EMシンポジウム

Presentation date： 2018
「Pb(Zrx,Ti1-x)O3スパッタエピ膜における MPB 特性発現の検証」

野田隆太, 清水貴博, 和佐清孝, 柳谷隆彦

第４７回EMシンポジウム

Presentation date： 2018
「c 軸傾斜配向厚みすべりモード ScAlN 薄膜共振子を用いた生体高分子反応の検出」

矢崎花, 唐澤嶺, 吉田憲司, 高柳真司, 柳谷隆彦

第４７回EMシンポジウム

Presentation date： 2018
「(0001)ScAlN/(000-1)ZnO 極性反転構造を用いた 2 次モードトランスデューサの水中放射特性」

間島毅, 清水貴博, 柳谷隆彦

第４７回EMシンポジウム

Presentation date： 2018
「ウエハ付きAs-grown圧電薄膜のRFフィルタ向け特性評価法およびScAlN薄膜の成長ノウハウ」

柳谷隆彦

アルバックシンポジウム

Presentation date： 2018
New BAW filter materials for 5G smart phone

T. Yanagitani

LG化学 Tech Scouting Japan

Presentation date： 2018
「抗電界差により周波数スイッチナブルとなるPZT/PbTiO3分極反転エピタキシャル薄膜音響共振子」

清水貴博, 柳谷隆彦

第79回応用物理学会秋季学術講演会

Presentation date： 2018
「ScAlN, ZnOおよびPZT系薄膜の極性制御と分極反転デバイスへの応用」

清水貴博, 柳谷隆彦

第79回応用物理学会秋季学術講演会

Presentation date： 2018
「最新の窒化物BAWフィルタの動向と酸化物圧電薄膜の位置づけ」

柳谷隆彦

第79回応用物理学会秋季学術講演会

Presentation date： 2018
「FBARフィルタ用の圧電薄膜材料の進展とウエハの評価手法」

柳谷隆彦

第168回電子セラミック・プロセス研究会

Presentation date： 2018
「c軸傾斜配向厚みすべりモードScAlN薄膜共振子を用いた液体中生体分子相互作用の検出」

矢崎花, 五月女巧, 唐澤嶺, 高柳真司, 吉田憲司, 柳谷隆彦

電子情報通信学会超音波研究会

Presentation date： 2018
「c軸傾斜配向ScAlN薄膜/音響多層膜構造の共振子を用いたUHF帯における液体粘性評価」

山川愉生, 五月女巧, 唐澤嶺, 柳谷隆彦

電子情報通信学会超音波研究会

Presentation date： 2018
「基板付き薄膜共振子からの新規kt2評価法と従来法の比較〜共振周波数比法、変換損失法、共振スペクトル法、共振反共振法〜」

戸塚誠, 柳谷隆彦

電子情報通信学会超音波研究会

Presentation date： 2018
「分極反転PZT/PTOエピ膜を用いた周波数スイッチナブルなGHz帯共振子」

清水貴博, 森剛志, 柳谷隆彦

電子情報通信学会超音波研究会

Presentation date： 2018
「製法の異なるScAl合金スパッタターゲットから発生する負イオンがScAlN薄膜の特性に及ぼす影響〜電子ビーム溶融、アーク溶融、焼結ScAl合金ターゲットの比較〜」

唐澤嶺, 高柳真司, 遠藤結佳, 今川誠, 森坂啓介, 鈴木雄, 柳谷隆彦

電子情報通信学会超音波研究会

Presentation date： 2018
“Thick PZT epitaxial film growth for ultrasonic transducer application below 100 MHz" 12th Japan-Korea Conference on Ferroelectrics,”

Y. Mazda, T. Yanagitani

12th Japan-Korea Conference on Ferroelectrics

Presentation date： 2018
“Frequency switchable polarity inverted resonators based on cubic PMN-PT/tetragonal PZT epitaxial stack,”

T. Shimidzu, T. Yanagitani

12th Japan-Korea Conference on Ferroelectrics

Presentation date： 2018
“Investigation of MPB in Pb(Zrx,Ti1-x)O3 epitaxial films by RF magnetron sputtering growth,”

R. Noda, T. Yanagitani

12th Japan-Korea Conference on Ferroelectrics

Presentation date： 2018
“A method for extracting GHz electromechanical coupling coefficient from piezoelectric film/substrate structure without removing substrate,”

T. Yanagitani

12th Japan-Korea Conference on Ferroelectrics

Presentation date： 2018
“Influence of negative ions generation on the quality of ScAlN films grown by sputtering targets with different concentration of oxygen and carbon,”

Y. Endo, R. Karasawa, S. Takayanagi, M. Imakawa, K. orisaka, Y. uzuki, T. anagitani

International Workshop on Piezoelectric Materials and Applications in Actuators(IWPMA2018)

Presentation date： 2018
“Comparison of kt2 extraction method from film/substrate structure by using the ratio of resonant frequencies with conventional methods,”

M. Totsuka, T. Yanagitani

International Workshop on Piezoelectric Materials and Applications in Actuators(IWPMA2018)

Presentation date： 2018
“Polarity inverted high efficiency ultrasonic transducer with (0001)ZnO/(000-1)ZnO/SiO2 glass buffer rod,”

T. Majima, T. Shimidzu, T. Yanagitani

International Workshop on Piezoelectric Materials and Applications in Actuators(IWPMA2018)

Presentation date： 2018
“Thick PZT epitaxial film and ScAlN film for ultrasonic transducer below 100 MHz,”

Y. Mazda, C. Masamune, R. Karasawa, T. Shimidzu, T. Yanagitani

International Workshop on Piezoelectric Materials and Applications in Actuators(IWPMA2018)

Presentation date： 2018
“Temperature characteristics of ScAlN/SiO2 BAW resonators,”

H.Igeta, M. Totsuka, M. Suzuki, T. Yanagitani

IEEE International Ultrasonics Symposium

Presentation date： 2018
“A new method for extracting Qfactor of the piezoelectric film without removing substrate,”

S. Kinoshita, M. Totsuka, R. Karasawa, T. Yanagitani

IEEE International Ultrasonics Symposium

Presentation date： 2018
“Investigation of morphotropic phase boundary in sputter-grown Pb(Zrx, Ti1-x)O3 epitaxial films,”

R. Noda, T. Shimidzu, K. Wasa

IEEE International Ultrasonics Symposium

Presentation date： 2018
“High efficiency ultrasonic transducer using polarity inverted ZnO thin film,”

T. Majima, T. Shimidzu, T. Yanagitani

IEEE International Ultrasonics Symposium

Presentation date： 2018
“ScAlN free-standing 0.1mm plates with 30-50 MHz resonance frequency,”

C. Masamune, R. Karasawa, T. Yanagitani

IEEE International Ultrasonics Symposium

Presentation date： 2018
“PZT epitaxial thick film for ultrasonic transducer at frequencies below 100MHz,”

Y. Mazuda, T. Shimidzu, T. Yanagitani

IEEE International Ultrasonics Symposium

Presentation date： 2018
“The influence of negative ions generation on the arc-melted and hot press sintered ScAlN alloy targets to the crystalline orientation and kt2 of the ScAlN films,”

Y. Endo, R. Karasawa, S. Takayanagi, M.Imakawa, K. Morisaka, T. Yanagitani

IEEE International Ultrasonics Symposium

Presentation date： 2018
“c-axis tilted ScAlN film shear mode resonators for biosensing,”

H. Yazaki, T. Sotome, S. Takayanagi, K. Yoshida, T. Yanagitani

IEEE International Ultrasonics Symposium

Presentation date： 2018
“Evaluation of viscoelactic properties of liquids based on the oblique incidence technology using shear horizontal waves at frequencies above 100 megahertz from c-axis tilted ScAlN thin films,”

Y. Yamakawa, T. Yanagitani

IEEE International Ultrasonics Symposium

Presentation date： 2018
“Extraction of electromechanical coupling coefficient of film / substrate structure by using the ration of a third mode resonant frequency to a fundamental mode resonant frequency,”

M. Totsuka, T. Yanagitani

IEEE International Ultrasonics Symposium

Presentation date： 2018
“DC-induced piezoelectric cubic PMN-PT/piezoelectric tetragonal PZT epitaxial stack polarity inverted resonators for frequency switchable filters,”

T. Shimidzu, T. Yanagitani

IEEE International Ultrasonics Symposium

Presentation date： 2018
“Polarity inverted ScAlN multilayer for application to transformer in rectifying antenna,”

R. Karasawa, T. Yanagitani

IEEE International Ultrasonics Symposium

Presentation date： 2018
「抗電界差による基本モード/高次モード周波数切替可能なPZT/PTエピ膜分極反転共振子」

清水貴博, 森剛志, 柳谷隆彦, 和佐清孝

圧電材料・デバイスシンポジウム

Presentation date： 2017
「c軸傾斜配向ScAlN膜/ATカット水晶基板構造の低TCF横波共振子を用いた広帯域周波数粘度測定」

山川愉生, 佐野耕平, 唐澤嶺, 森剛志, 柳谷隆彦

圧電材料・デバイスシンポジウム

Presentation date： 2017
「c軸傾斜配向ScAlN膜/ブラック反射層構造のGHz帯厚みすべりモード共振子を用いた液体粘性評価」

唐澤嶺, 山川愉生, 森剛志, 矢?花, 佐野耕平, 柳谷隆彦

圧電材料・デバイスシンポジウム

Presentation date： 2017
「RFマグネトロンスパッタ法を用いて作製したc軸平行配向ZnO膜の圧電不活性層低減に関する検討」

盛一馬, 高柳真司, 松川真美, 柳谷隆彦

圧電材料・デバイスシンポジウム

Presentation date： 2017
「電気機械結合係数 kt2=19%のScAlN厚膜を用いた低周波帯80 MHzトランスデューサ」

佐野耕平, 唐澤嶺, 柳谷隆彦

圧電材料・デバイスシンポジウム

Presentation date： 2017
「縦波・横波の超音波伝搬時における骨中誘発電位の検討」

松川沙弥果, 牧野大輝, 小山大介, 高柳真司, 水野勝紀, 柳谷隆彦, 松川真美

圧電材料・デバイスシンポジウム

Presentation date： 2017
「ScAlN薄膜トランスデューサを用いた縦波・横波のブリュアン散乱光の同時増幅」

柴垣慶明, 川部昌彦, 柳谷隆彦, 高柳真司, 鈴木雅視, 松川真美

日本音響学会2016年秋季研究発表会

Presentation date： 2017
「単結晶PZT/PTエピタキシャル薄膜を用いた周波数切り替え可能な共振子」

森剛志, 高柳真司, 清水貴博, 柳谷隆彦

2017年電子情報通信学会総合大会

Presentation date： 2017
「チューナブルフィルタを目指した PMN 常誘電相エピ膜の電界誘起圧電特性と分極反転特性」

清水貴博, 柳谷隆彦, 和佐清孝

第４６回ＥＭシンポジウム

Presentation date： 2017
「c 軸傾斜配向 ScAlN/AT カット水晶基板構造の低 TCF 横波 HBAR を用いた MHz 帯-GHz 帯粘性評価」

山川愉生, 佐野耕平, 唐澤嶺, 柳谷隆彦

第４６回ＥＭシンポジウム

Presentation date： 2017
「高電気機械結合係数を持つ80MHz 帯 ScAlN 厚膜のハイドロフォン応用への検討」

佐野耕平, 唐澤嶺, 柳谷隆彦

第４６回ＥＭシンポジウム

Presentation date： 2017
「分極反転圧電薄膜の成長と応用〜レクテナ昇回路へ検討〜」

柳谷隆彦, 唐澤嶺

第４６回ＥＭシンポジウム

Presentation date： 2017
“PMN paraelectric phase epitaxial film for DC field-induced frequency switchable filter”

T. Shimidzu, K. Wasa, T. Yanagitani

The 38th Symposium on Ultrasonic Electronics

Presentation date： 2017
“Film growth of c-axis parallel oriented ZnO films by RF magnetron sputtering for improvement of electromechanical properties”

K. Mori, S. Takayanagi, M. Matsukawa, T. Yanagitani

The 38th Symposium on Ultrasonic Electronics

Presentation date： 2017
“Simple and rapid measurement of hypersonic wave velocity by Brillouin scattering method”

Y. Shibagaki, M. Kawabe, S. Takayanagi, T. Yanagitani

The 38th Symposium on Ultrasonic Electronics

Presentation date： 2017
“Simultaneous viscosity evaluation in the MHz to GHz range with low TCF resonators consisting of shear mode piezoelectric thin films on AT-cut quartz crystal”

Y. Yamakawa, R. Karasawa, T. Shimidzu, T. Yanagitani

The 38th Symposium on Ultrasonic Electronics

Presentation date： 2017
“c-Axis tilted ScAlN film on sapphire substrate for SAW devices with high electromechanical coupling”

S. Tokuda, S. Takayanagi, M. Matsukawa, T. Yanagitani

The 38th Symposium on Ultrasonic Electronics

Presentation date： 2017
“Polarity inverted ScAlN films for application to transformer in rectenna”

R. Karasawa, T. Yanagitani

The 38th Symposium on Ultrasonic Electronics

Presentation date： 2017
“Induced electrical potentials in cortical bone under shear ultrasound exposure”

T. Makino, K. Takano, S. Nakanishi, D. Koyama, S. Takayanagi, T. Yanagitani, M. Matsukawa

The 38th Symposium on Ultrasonic Electronics

Presentation date： 2017
“Effects of highly energetic negative ions generated from Sc grains during sputtering deposition on electromechanical properties of ScAlN film”

S. Takayanagi, T. Yanagitani

The 38th Symposium on Ultrasonic Electronics

Presentation date： 2017
“High efficiency ScAlN thick film hydrophone operating in the ranges of 40-80 MHz”

K-h. Sano, R. Karasawa, T. Yanagitani

The 38th Symposium on Ultrasonic Electronics

Presentation date： 2017
「高品質ScAlN薄膜の成長条件と圧電特性および音響特性の評価」

柳谷隆彦, 唐澤嶺, 佐野耕平

EMデバイス・システムの新技術調査専門委員会

Presentation date： 2017
"Electromechanical coupling hysteresis curves of PZT epitaxial ferroelectric films determined by gigahertz ultrasonic method"

T. Yanagitani, T. Mori, K. Wasa

12th Pacific Rim Conference on Ceramic and Glass Technology (PACRIM 12)

Presentation date： 2017
"High electromechanical coupling thick ScAlN piezoelectric films for ultrasonic generation in low frequency of 80MHz"

K. Sano, R. Karasawa, T. Yanagitani

12th Pacific Rim Conference on Ceramic and Glass Technology (PACRIM 12)

Presentation date： 2017
"Liquid gigahertz viscosity sensors using shear mode c-axis tilted ScAlN piezoelectric thin films"

Y. Yamakawa, R. Karasawa, T. Mori, K. Sano, M. Suzuki, T. Yanag

12th Pacific Rim Conference on Ceramic and Glass Technology (PACRIM 12)

Presentation date： 2017
"Polarity inverted PZT/PbTiO3 ferroelectric epitaxial film for frequency switchable resonator filters"

T. Shimizu, T.Mori, M. Suzuki, T. Yanagitani, K. Wasa

12th Pacific Rim Conference on Ceramic and Glass Technology (PACRIM 12)

Presentation date： 2017
"Broadband frequency viscosity measurement using low TCF shear mode resonators consisting of c-axis tilted ScAlN thin film on thick AT-Cut quartz plate"

Y. Yamakawa, K. Sano, R. Karasawa, T. Yanagitani

The 19th International Conference on Solid-State Sensors, Actuators and Microsystems

Presentation date： 2017
"Thick ScAlN film for high efficient ultrasonic transducer in low frequency of 81 MHz"

K.-H. Sano, R. Karasawa, T. Yanagitani

The 19th International Conference on Solid-State Sensors, Actuators and Microsystems

Presentation date： 2017
“Film Growth of C-Axis parallel oriented ZnO on entire surface of silica glass pipe for SH-SAW pipe sensor,”

Y. Takamura, S. Takayanagi, M. Matsukawa, C. Ishida, T. Yanagitani

IEEE International Ultrason. Symp.

Presentation date： 2017
“Effects of negative oxygen ions generated during Sc ingot sputtering on electromechanical coupling of ScAlN film ,”

S. Takayanagi, T. Yanagitani

IEEE International Ultrason. Symp.

Presentation date： 2017
“Film growth of c-axis tilted ScAlN on the sapphire substrate for SAW devices,”

S. Tokuda, S. Takayanagi, M. Matsukawa, T. Yanagitani

IEEE International Ultrason. Symp.

Presentation date： 2017
“The frequency wwitchable multi-layered BST/BaTiO3 epitaxial film resonator,”

S. Takayanagi, M. Matsukawa, T. Yanagitani

IEEE International Ultrason. Symp.

Presentation date： 2017
“High electromechanical coefficient kt 2=19% thick ScAlN piezoelectric films for ultrasonic transducer in low frequency of 80 MHz,”

K-h. Sano, R. Karasawa, T. Yanagitani

IEEE International Ultrason. Symp.

Presentation date： 2017
“A new type wide-frequency-range shear viscosity sensor using caxis tilted ScAlN thin film on temperature stable AT-cut quartz thick plate,”

Y. Yamakawa, K-h. Sano, R. Karasawa, T. Yanagitani

IEEE International Ultrason. Symp.

Presentation date： 2017
“C-axis zig-zag polarization inverted ScAlN multilayer for FBAR transformer rectifying antenna,”

R. Karasawa, T. Yanagitani

IEEE International Ultrason. Symp.

Presentation date： 2017
“DC field-induced piezoelectricity of cubic perovskite 0.95Pb(Mg1/3Nb2/3)O3-0.05PbTiO3 epitaxial film for RF switchable resonator,”

T. Shimidzu, K. Wasa, T. Yanagitani

IUMRS-ICA

Presentation date： 2017
“Frequency switchable multi-layered paraelectric-BST/ferroelectric-BaTiO3 stack epitaxial film resonator,”

R. Noda, T. Shimidzu, K. Wasa, T. Yanagitani

IUMRS-ICA

Presentation date： 2017
「PZTと PT の抗電界差を利用した周波数スイッチナブル分極反転エピタキシャ薄膜共振子」

森剛志, 柳谷隆彦, 和佐清孝

第45回EMシンポジウム

Presentation date： 2016
「ScAlN/ZnO極性反転圧電薄膜を用いた2次モード励振超音波トランスデューサ」

森剛志, 鈴木雅視, 柳谷隆彦

電子情報通信学会超音波研究会

Presentation date： 2016
「GHz帯で純横波超音波を高効率励振するc軸平行ZnO薄膜トランスデューサ」

森剛志, 鈴木雅視, 柳谷隆彦

電子情報通信学会超音波研究会

Presentation date： 2016
「励起フォノンを用いたBrillouin散乱測定の高速化に関する検討」

柴垣慶明, 川部昌彦, 柳谷隆彦, 高柳真司, 鈴木雅視, 松川真美

第58回光波センシング技術研究会

Presentation date： 2016
"Piezoelectric stiffening in the thickness direction of c-plane ZnO single crystal measured by Brillouin scattering"

S. Tomita, T. Yanagitani, S. Takayanagi, M. Matsukawa

The 37th Symposium on Ultrasonic Electronics (USE2016).

Presentation date： 2016
"Evaluation of piezoelectricity in bone by ultrasound irradiation"

S. Matsukawa, S.Mori, D. Koyama, S. Takayanagi, K. Mizuno, T. Yanagitani, M. Matsukawa

The 37th Symposium on Ultrasonic Electronics (USE2016).

Presentation date： 2016
"High electromechanical coupling of Sezawa mode SAW using a polarization-inverted ScAlN film/highvelocity substrate structure"

S. Takayanagi, T. Yanagitani

The 37th Symposium on Ultrasonic Electronics (USE2016).

Presentation date： 2016
"Polarity inverted Pb(Zr,Ti)O3/PbTiO3 epitaxial multilayer frequency switchable resonator in the GHz range"

T. Mori, T. Yanagitani, K. Wasa

13th International Workshop on Piezoelectric Materials and Applications in Actuators & Energy Conversion Materials and Devices

Presentation date： 2016
"Electromechanical coupling hysteresis curves of Pb(Zr,Ti)O3 epitaxial films determined by GHz ultrasonic method using film/substrate structure"

T. Yanagitani, T. Mori, K. Wasa

13th International Workshop on Piezoelectric Materials and Applications in Actuators & Energy Conversion Materials and Devices

Presentation date： 2016
"Temperature stable liquid gigahertz viscosity sensors by combining shear mode piezoelectric ScAlN thin film and AT-cut quartz crystal plate"

K-h. Sano, T. Mori, R. Karasawa, T. Yanagitani

5th Joint Meeting of the Acoustical Society of America and Acoustical Society of Japan

Presentation date： 2016
"c-axis tilted ScAlN shear wave acoustic Bragg reflect resonator for gigahertz viscosity measurement"

Takeshi Mori, Yui Yamakawa, Rei Karasawa, Ko-hei Sano, Takahiko Yanagitani, Shinji Takanayanagi

5th Joint Meeting of the Acoustical Society of America and Acoustical Society of Japan

Presentation date： 2016
P5-C2-4 "Brillouin scatteringstudy on piezoelectricstiffening effect in thethickness direction ofc-plane ZnO single crystal"

S. Tomita, T. Yanagitani, S. Takayanagi, H. Ichihashi, M. Matsukawa

IEEE International Ultrason. Symp,

Presentation date： 2016
4K-2 "Anisotropic behavior ofinduced electric potentialsin bone by ultrasoundirradiation"

S. Matsukawa, S. Mori, Isao Mano, T. Yanagitani, K. Mizuno, S.Takayanagi, M. Matsukawa

IEEE International Ultrason. Symp,

Presentation date： 2016
6K-1 "Rapid and simultaneousmeasurement of longitudinaland shear wave velocitiesby Brillouin scattering fromartificially induced phonons"

M. Kawabe, T. Yanagitani, S. Takayanagi, Y. Shibagaki, M. Suzuki, M. Matsukawa

IEEE International Ultrason. Symp,

Presentation date： 2016
6H-4 Improvement ofelectromechanical propertiesin c-axis parallel orientedZnO film by RF magnetronsputtering with negative ionbombardment"

K. Mori, S. Takayanagi, M. Matsukawa, T. Yanagitani

IEEE International Ultrason. Symp,

Presentation date： 2016
6H-3 "Effects of energeticnegative ions generatedfrom sputtering targets onScAlN film growth"

S. Takayanagi, M.Matsukawa, T. Yanagitani

IEEE International Ultrason. Symp,

Presentation date： 2016
H-2 "Evaluation of viscousliquid using resonance andanti-resonance of thicknessshearmode resonatorconsisting of c-axis paralleloriented ZnO film"

R. Iwanaga, S. Takayanagi, Y. Watanabe, M. Matsukawa, T. Tsuchiya, T. Yanagitani

IEEE International Ultrason. Symp,

Presentation date： 2016
6H-1 "The frequencyswitchable resonatorconsisting of polarityinverted Pb(Zr,Ti)O3/PbTiO3epitaxial multilayer"

T. Mori, M. Suzuki, T. Yanagitani

IEEE International Ultrason. Symp,

Presentation date： 2016
P3-B2-7 "Electromechanicalcoupling hysteresis curvesof Pb(Zr,Ti)O3and PbTiO3epitaxial films determinedby ultrasonic measurementusing film/substratestructure"

T. Mori, M. Suzuki, S. Takayanagi, T. Yanagitani

IEEE International Ultrason. Symp,

Presentation date： 2016
P3-B2-1 "High electromechanical coupling of Sezawa mode SAW in c-axis-parallel-oriented ScAlN film/high-velocitysubstrate structures"

S. Takayanagi, M. Matsukawa, T. Yanagitani

IEEE International Ultrason. Symp,

Presentation date： 2016
"Rapid wave velocity measurement by Brillouin scattering using artificially induced phonon"

Y. Shibagaki, M. Kawabe, S. Takayanagi, K. Mori, T. Yanagitani, M. Matsukawa

5th Joint Meeting of the Acoustical Society of America and Acoustical Society of Japan

Presentation date： 2016
"Liquid loading characteristics of multiple SH-wave roundtrip in c-axis parallel oriented ZnO film/silica glass pipe"

S.Takayanagi, S.Hirayama, M.Matsukawa, T.Yanagitani

5th Joint Meeting of the Acoustical Society of America and Acoustical Society of Japan

Presentation date： 2016
陽極RFバイアス法による2次モード(000-1)/(0001)ScAlN FBAR

鈴木雅視, 柳谷隆彦

圧電材料・デバイスシンポジウム2015

Presentation date： 2015
ScAlN薄膜における弾性定数テンソルのSc濃度依存性

柳谷隆彦, 市橋隼人, 鈴木雅視, 高柳真司, 松川真美

圧電材料・デバイスシンポジウム2015

Presentation date： 2015
走査型非線形誘電率顕微法による層状構造圧電薄膜の極性評価

小田川裕之, 寺田浩士朗, 西川宏明, 柳谷隆彦, 長康雄

圧電材料・デバイスシンポジウム2015

Presentation date： 2015
基板付き圧電薄膜のkt評価法の比較

小林勇太, 鈴木雅視, 柳谷隆彦, 荒川元孝, 大橋雄二

圧電材料・デバイスシンポジウム2015

Presentation date： 2015
超音波照射による骨中誘発電位の極性について

常田裕子, 松川沙弥果, 真野功, 水野勝紀, 柳谷隆彦, 高柳真司, 松川真美

圧電材料・デバイスシンポジウム2015

Presentation date： 2015
RFバイアス三極スパッタ法におけるイオン照射を利用したO面，Zn面，a面およびm面ZnO薄膜の形成

橋本亮介, 高柳真司, 柳谷隆彦, 松川真美

第62回応用物理学会春季学術講演会

Presentation date： 2015
180°，90R散乱配置を用いたBrillouin散乱計測によるGaNの弾性定数測定

市橋隼人, 柳谷隆彦, 高柳真司, 川部昌彦, 松川真美

第62回応用物理学会春季学術講演会

Presentation date： 2015
(EM44-2-05) 「c 軸傾斜ScAlN 薄膜における擬似すべりモード電気機械結合係数のSc 濃度依存性」

鈴木雅視, 柳谷隆彦

第４４回EMシンポジウム

Presentation date： 2015
(EM44-2-03) 「スパッタ成膜の高速負イオン照射を用いたc 軸平行配向ZnO 膜の形成と圧電デバイス応用」

高柳真司, 柳谷隆彦, Jean-Claude Gerbedoen、Abdelkrim Talbi, 松川真美, Philippe Pernod

第４４回EMシンポジウム

Presentation date： 2015
「Brillouin散乱法を用いた圧電性ScAlN薄膜による励起フォノンの測定」

川部昌彦, 柳谷隆彦, 市橋隼人, 高柳真司, 鈴木雅視, 松川真美

第76回応用物理学会秋季学術講演会

Presentation date： 2015
「イオンビーム照射によるc軸平行極性反転構造ZnO薄膜の形成」

森剛志, 鈴木雅視, 柳谷隆彦

第76回応用物理学会秋季学術講演会

Presentation date： 2015
「斜めスパッタ蒸着法によるc軸傾斜ScAlN薄膜の形成」

鈴木雅視, 柳谷隆彦

第76回応用物理学会秋季学術講演会

Presentation date： 2015
「Al極性(0001)ScAlN/O極性(000-1)ZnO極性反転構造の薄膜音響共振子」

森剛志, 鈴木雅視, 柳谷隆彦

第76回応用物理学会秋季学術講演会

Presentation date： 2015
「MHz 域における皮質骨の逆圧電効果」

松川沙弥果, 森駿貴, 眞野功, 水野勝紀, 柳谷隆彦, 高柳真司, 松川真美

日本音響学会2016年春季研究発表会

Presentation date： 2015
「c軸平行配向ZnO膜によるSH-SAWを用いた液体の粘度・導電率測定」

日山彰子, 高柳真司, 松川真美, 柳谷隆彦

圧電材料・デバイスシンポジウム2016

Presentation date： 2015
「Brillouin散乱法を用いたc面ZnO単結晶の音響電気効果による緩和測定」

富田昇太, 高柳真司, 松川真美, 柳谷隆彦

圧電材料・デバイスシンポジウム2016

Presentation date： 2015
「c軸平行配向ScAlN膜/高音速基板構造を用いたセザワ波の高い電気機械結合係数」

高柳真司, 岡峰生, 松川真美, 柳谷隆彦

圧電材料・デバイスシンポジウム2016

Presentation date： 2015
「RFマグネトロンスパッタにおけるc軸平行配向ZnO膜の高品質化の検討」

高田千裕, 高柳真司, 松川真美, 柳谷隆彦

圧電材料・デバイスシンポジウム2016

Presentation date： 2015
「イオンビーム照射を用いたc軸平行極性反転構造ZnO薄膜共振子」

森剛志, 鈴木雅視, 柳谷隆彦

圧電材料・デバイスシンポジウム2016

Presentation date： 2015
「通常のスパッタ法を用いたAl極性ScAlN/O極性ZnO極性反転構造トランスデューサ」

森剛志, 鈴木雅視, 柳谷隆彦

圧電材料・デバイスシンポジウム2016

Presentation date： 2015
「スパッタターゲットから発生するイオン種がScAlN薄膜の結晶性に及ぼす影響」

高柳真司, 松川真美, 柳谷隆彦

圧電材料・デバイスシンポジウム2016

Presentation date： 2015
「IBAD 法による c 軸平行配向 ScAlN 薄膜の形成とすべりモード共振子への応用」

岡峰生, 高柳真司, 柳谷隆彦, 松川真美

第 36 回超音波エレクトロニクスの基礎と応用に関するシンポジウム

Presentation date： 2015
「c 軸傾斜 ScxAl-xN 薄膜(0<0.55)における擬似すべりモード電気機械結合係数」

鈴木雅視, 柳谷隆彦

第 36 回超音波エレクトロニクスの基礎と応用に関するシンポジウム

Presentation date： 2015
「Al 極性 ScAlN/O 極性 ZnO 極性反転多層構造を用いた GHz 帯高効率トランスデューサ」

森剛志, 鈴木雅視, 柳谷隆彦

第 36 回超音波エレクトロニクスの基礎と応用に関するシンポジウム

Presentation date： 2015
「走査型非線形誘電率顕微法による層状極性反転圧電膜の層厚の定量測定」

寺田浩士朗, 西川宏明, 田中陽, 小田川裕之, 柳谷隆彦, 長康雄

第 36 回超音波エレクトロニクスの基礎と応用に関するシンポジウム

Presentation date： 2015
「H2O 導入スパッタ法を用いて作製した c 軸平行配向 ZnO 膜のすべりモード電気機械結合係数」

高田千裕, 高柳真司, 柳谷隆彦, 松川真美

第 36 回超音波エレクトロニクスの基礎と応用に関するシンポジウム

Presentation date： 2015
「皮質骨中における超音波誘発電位に関する検討」

松川沙弥果, 森駿貴, フォタネルエロディー, 眞野功, 水野勝紀, 柳谷隆彦, 高柳真司, 松川真美

第 36 回超音波エレクトロニクスの基礎と応用に関するシンポジウム

Presentation date： 2015
「Brillouin光散乱を用いたc軸配向薄膜の音速および常屈折率の同時測定」

富田昇太, 柳谷隆彦, 鈴木雅視, 高柳真司, 松川真美

電子情報通信学会超音波研究会vol. 115, no02, pp.23-28

Presentation date： 2015
「低圧RFマグネトロンスパッタ法によるc軸平行配向ZnO膜の形成とSAW、Lamb波デバイスへの応用」

高柳真司, 柳谷隆彦, Jean-Claude Gerbedoen, Abdelkrim Talbi, 松川真美, Philippe Pernod

電子情報通信学会超音波研究会vol. 115, no07, pp.25-30

Presentation date： 2015
「c軸平行配向ZnO膜/円管石英構造におけるSH波の多重周回伝搬特性と導電率測定への応用」

日山彰子, 柳谷隆彦, 高柳真司, 松川真美

電子情報通信学会超音波研究会vol. 115, no07, pp.19-24

Presentation date： 2015
「イオンビームアシストRFマグネトロンスパッタ法を用いて作製したc軸平行配向ScAlN薄膜の電気機械結合係数」

岡峰生, 高柳真司, 柳谷隆彦, 松川真美

電子情報通信学会超音波研究会vol. 115, no07, pp.31-35

Presentation date： 2015
「共振法およびBrillouin散乱法で測定したScAlN薄膜の弾性定数テンソルのSc濃度依存性」

柳谷隆彦, 市橋隼人, 鈴木雅視, 高柳真司, 松川真美

電子情報通信学会超音波研究会vol. 115, no07, pp.37-42

Presentation date： 2015
「ScAlN圧電薄膜から励起されたコヒーレントフォノンのBrillouin散乱」

趙恩慧, 川部昌彦, 高柳真司, 鈴木雅視, 柳谷隆彦, 松川真美

電子情報通信学会超音波研究会vol. 115, no46, pp.27-30,

Presentation date： 2015
「走査型非線形誘電率顕微法による極性反転層状構造圧電膜の層厚の定量測定」

寺田浩士朗, 西川宏明, 田中陽平, 小田川裕之, 柳谷隆彦, 長康雄

電子情報通信学会超音波研究会vol. 115, no46, pp.23-26

Presentation date： 2015
“Multiple SH wave roundtrip type liquid sensor of pipe structure with c-axis parallel oriented ZnO film”

S. Hiyama, T. Yanagitani, S. Takayanagi, M. Matsukawa

International Congress of Ultrasonics

Presentation date： 2015
“High Tc /High Coupling Perovskite Thin Films,”

K. Wasa, T. Matsushima, H. Adachi, T. Matsunaga, T. Yanagitani, T. Yamamoto

IEEE ISAF/IWATMD/PFM, pp. 1-4, (2014).

Presentation date： 2015
“ScAlN thin film transducers for ultrasonic microscopy in the VHF range”

Y. Korai, M.i Suzuki, T. Yanagitani

IEEE International Ultrasonics Symposium

Presentation date： 2015
“Measurement of acoustic wave velocity and refractive index in thickness direction of c-axis oriented ScAlN films by Brillouin scattering”

S. Tomita, T. Yanagitani, M. Suzuki, H. Ichihashi, S. Takayanagi, M. Matsukawa

IEEE International Ultrasonics Symposium

Presentation date： 2015
“Shear mode properties of c-axis parallel oriented ScxAl1-xN films grown by RF bias sputtering“

S. Takayanagi, T. Yanagitani, M. Matsukawa

IEEE International Ultrasonics Symposium

Presentation date： 2015
“c-axis parallel polarity inverted multilayer ZnO film resonators fabricated by grazing ion beam assisted RF magnetron sputtering”

T. Mori, T. Yanagitani, M. Suzuki

IEEE International Ultrasonics Symposium

Presentation date： 2015
“Ultrasound radiation from bone transducer in the MHz range”

S. Matsukawa, H. Tsuneda, I. Mano, K. Mizuno, T. Yanagitani, S. Takayanagi, M. Matsukawa

IEEE International Ultrasonics Symposium

Presentation date： 2015
“Quasi-shear mode electromechanical coupling k'15 and shear wave velocity in c-axis tilted ScxAl1-xN films”

M. Suzuki, T. Yanagitani

IEEE International Ultrasonics Symposium

Presentation date： 2015
“Elastic constant cij E tensors of (0001) ScxAl1-xN films (x=0-0.63)”

T. Yanagitani, H. Ichihashi, M. Suzuki, S. Takayanagi, M. Matsukawa

IEEE International Ultrasonics Symposium

Presentation date： 2015
“c-Axis parallel oriented ScAlN films grown by ion-beam assisted RF magnetron sputtering”

M. Oka, S. Takayanagi, T. Yanagitani, M. Matsukawa

IEEE International Ultrasonics Symposium

Presentation date： 2015
“Conductivity measurement of liquid by SH-SAW sensor consisting of IDT/(11-20) oriented ZnO film/silica glass substrate “

S. Hiyama, T. Yanagitani, S. Takayanagi, M. Matsukawa

IEEE International Ultrasonics Symposium

Presentation date： 2015
“High order mode polarity inverted Al-polar (0001) ScAlN/O-polar (000-1) ZnO film resonator”

T. Mori, T. Yanagitani, M. Suzuki

IEEE International Ultrasonics Symposium

Presentation date： 2015
“Fast wave velocity measurement by Brillouin scattering using induced phonon from ScAlN piezoelectric thin film”

M. Kawabe, T. Yanagitani, H. Ichihashi, S. Takayanagi, M. Suzuki, M. Matsukawa

IEEE International Ultrasonics Symposium

Presentation date： 2015
Elastic constants c11 and c66 in ScxAl1-xN films determined by Brillouin scattering method

The 35th Symposium on Ultrasonic Electronics

Presentation date： 2014
Brillouin scattering measurement using induced phonon from ScAlN piezoelectric thin film

The 35th Symposium on Ultrasonic Electronics

Presentation date： 2014
Effects of microstructure on bone piezoelectricity in the MHz range

The 35th Symposium on Ultrasonic Electronics

Presentation date： 2014
Propagation characteristics of SH-wave in c-axis parallel oriented ZnO film/silica glass pipe

The 35th Symposium on Ultrasonic Electronics

Presentation date： 2014
Second overtone mode (0001)/(000-1) ScAlN multilayer FBARs fabricated by anode RF bias

The 35th Symposium on Ultrasonic Electronics

Presentation date： 2014
Second overtone mode polarization inverted HBAR consisting of (001)/(00-1) PbTiO3 epitaxial

The 35th Symposium on Ultrasonic Electronics

Presentation date： 2014
PbTiO3エピタキシャル薄膜を用いた二次モード分極反転共振子

Presentation date： 2014
極性反転ScAlN系薄膜の境界を伝搬するセザワ波の高い電気機械結合係数

高柳真司, 柳谷隆彦, 松川真美

EMシンポジウム2014

Presentation date： 2014
イオン照射による極性反転 ScAlN 薄膜の形成と高次モードFBAR への応用

柳谷隆彦, 鈴木雅視

EMシンポジウム2014

Presentation date： 2014
超音波照射により皮質骨に発生する誘発電位の検討

Presentation date： 2014
極性反転ZnOおよびAlN系薄膜の境界を伝搬するセザワ波の高い電気機械結合係数

Presentation date： 2014
RFバイアス三極スパッタ法によるイオン照射を用いたO面，Zn面，a面およびm面ZnO薄膜の配向制御

Presentation date： 2014
c軸平行配向ZnO膜/平面・円管状石英上を伝搬するSH-SAWの液体センサ応用

Presentation date： 2014
Bi(Me)O3-PbTiO3 高キュリー温度セラミックスの単結晶薄膜化

Presentation date： 2014
イオンビーム照射成膜によるc軸垂直配向希土類GaN薄膜の形成

Presentation date： 2014
エピタキシャルPZT 厚膜を用いた高温600℃における高効率超音波励振

Presentation date： 2014
圧電効果を利用した導電率計測技術

Presentation date： 2014
PZT系エピタキシャル薄膜を用いた二次モード分極反転共振子

Presentation date： 2014
c軸傾斜ScAlN薄膜の擬似すべりモード電気機械結合係数

Presentation date： 2014
音響電気効果を考慮したGaN単結晶のGHz域音速の温度・周波数分散測

Presentation date： 2014
エピタキシャルPZT系厚膜の高温550℃における高い電気機械結合係数

Presentation date： 2014
Second overtone mode polarization inverted resonator consisting of (001)/(00-1) PbTiO3 thin film

IEEE International Ultrasonics Symposium

Presentation date： 2014
RF bias induced polarity inversion of ScAlN film for overtone mode BAW resonator

IEEE International Ultrasonics Symposium

Presentation date： 2014
Effect of Sc concentration on shear wave velocities in ScAlN films measured by micro-Brillouin scattering technique

IEEE International Ultrasonics Symposium

Presentation date： 2014
Effect of sputtering target temperature on crystalline orientations of ZnO piezoelectric films in RF magnetron sputtering

IEEE International Ultrasonics Symposium

Presentation date： 2014
Polarity of piezoelectric properties in bone induced by ultrasound irradiation

IEEE International Ultrasonics Symposium

Presentation date： 2014
Sezawa mode SAW with high electromechanical coupling at the boundary of polarization-inverted (000-1)/(0001) ZnO, AlN and ScAlN films

IEEE International Ultrasonics Symposium

Presentation date： 2014
Multiple shear wave roundtrips liquid sensor by c-axis parallel oriented ZnO film/silica glass pipe structure

IEEE International Ultrasonics Symposium

Presentation date： 2014
Measurement of Polarization Structure in Layered Piezoelectric Thin Films Using Scanning Nonlinear Dielectric Microscopy

European Conference on Application of Polar Dielectrics 2014

Presentation date： 2014
High electromechanical coupling in PZT epitaxial thick film resonators at 550 degC

IEEE International Frequency Control Symposium

Presentation date： 2014
Second harmonic mode polarization inverted resonator consisting of PbTiO3 thin film

IEEE International Frequency Control Symposium

Presentation date： 2014
High Tc / High Coupling Perovskite Thin Films

2014 Joint IEEE ISAF-IWATMD-PFM

Presentation date： 2014
Sezawa Mode SAW with High Electromechanical Coupling at The Boundary of Polarization-Inverted ScAlN Film Stuructures

Presentation date： 2014
Polarity-inverted ScAlN film growth by ion beam irradiation and application to high overtone acoustic wave film resonators

Presentation date： 2014
RFバイアススパッタ法により生じる高エネルギー正イオン照射を利用した六方晶系薄膜の配向制御

Presentation date： 2013
c軸配向ZnO薄膜を用いた極性反転高次モード多層共振子

Presentation date： 2013
c軸傾斜配向ZnOまたはScAlN膜のレイリーSAWにおける高い電気機械結合

Presentation date： 2013
Brillouin散乱法によるGaN単結晶の音波物性測定

Presentation date： 2013
c軸配向ZnO膜の極性制御と極性反転高次モード共振子への応用

Presentation date： 2013
IDT/c軸平行配向ZnO膜/円柱状石英ガラス上を多重周回するSH-SAWの液体中伝搬特性

Presentation date： 2013
c軸平行配向ZnO膜を用いた厚みすべりモード共振子によるアポリポタンパク質の濃度評価

Presentation date： 2013
c軸傾斜配向ZnOまたはScAlN膜のレイリーSAWにおける高い電気機械結合係数

Presentation date： 2013
高温で高い圧電性を持つMnドープZnO薄膜

Presentation date： 2013
厚み共振を利用した圧電薄膜成長初期における無配向層の厚み評価

Presentation date： 2013
超音波照射による骨の誘発電位

Presentation date： 2013
MHz域の超音波照射による骨の誘発電位

Presentation date： 2013
超音波骨トランスデューサの受波感度の検討

Presentation date： 2013
RFバイアススパッタ法による高エネルギー正イオン照射を用いた六方晶系圧電薄膜の配向制御

Presentation date： 2013
c-axis parallel oriented multilayer AlN film grown by ion-beam assisted deposition

Presentation date： 2013
Brillouin 散乱法を用いたGaN 単結晶の音速分散測定

Presentation date： 2013
ScAlN 膜における相境界付近のGHz 帯圧電特性と弾性温度係数

Presentation date： 2013
GHz 帯超音波励振を用いたエピタキシャルPZT 薄膜の分極反転挙動観察

Presentation date： 2013
c 軸傾斜および平行配向ScAlN 薄膜/ 基板構造における弾性表面波の高い電気機械結合係数

Presentation date： 2013
イオンビームアシスト成膜法によるc軸平行螺旋構造AlN薄膜の形成

Presentation date： 2013
イオンビームアシスト成膜によるc軸平行極性反転AlN多層構造の形成

Presentation date： 2013
希土類を添加したGaN薄膜の相境界付近における巨大圧電性

Presentation date： 2013
PZT系単結晶薄膜のGHz帯圧電特性とバイアス印可時の分極反転挙動

Presentation date： 2013
希土類を添加したAlNおよびGaN薄膜の圧電特性

Presentation date： 2013
AlN系薄膜におけるイオンビームを用いたc軸平行螺旋構造およびc軸垂直極性反転構造の形成

Presentation date： 2013
平行配向ZnO圧電薄膜を用いた液中横波励振デバイス

Presentation date： 2013
「講演奨励賞受賞記念講演」イオンビーム照射成膜によるAlN薄膜の極性・配向制御および極性反転多層構造の形成

Presentation date： 2013
Characterization of GHz electromechanical properties of PZT single crystalline thin Films without removing substrate

IEEE 2013 Joint UFFC, EFTF and PFM Symposium

Presentation date： 2013
PZT-based high coupling with low permittivity thin films

IEEE 2013 Joint UFFC, EFTF and PFM Symposium

Presentation date： 2013
Enhancement of electromechanical coupling kt in rare earth doped c-axis oriented GaN films

IEEE 2013 Joint UFFC, EFTF and PFM Symposium

Presentation date： 2013
Electromechanical coupling kt and GHz longitudinal wave velocity in ScAlN films near phase boundary

IEEE 2013 Joint UFFC, EFTF and PFM Symposium

Presentation date： 2013
Polarity control of c-axis oriented ZnO films and application to polarity-inverted ZnO multilayer resonators

IEEE 2013 Joint UFFC, EFTF and PFM Symposium

Presentation date： 2013
Shear and longitudinal GHz elastic properties in GaN single crystals determined by Brillouin scattering method

IEEE 2013 Joint UFFC, EFTF and PFM Symposium

Presentation date： 2013
Orientation control of ZnO films by highly-energetic positive ion irradiation using RF substrate bias sputtering

IEEE 2013 Joint UFFC, EFTF and PFM Symposium

Presentation date： 2013
Multiple roundtrip SH-SAW liquid sensor using c-axis parallel oriented ZnO films on silica glass pipe

IEEE 2013 Joint UFFC, EFTF and PFM Symposium

Presentation date： 2013
Detection of antigen-antibody reaction by thickness-shear mode resonators consisting of caxis parallel oriented ZnO films

IEEE 2013 Joint UFFC, EFTF and PFM Symposium

Presentation date： 2013
Electrical potentials in wet induced by ultrasound irradiation

European Symposium on Ultrasonic Characterization of Bone 2013

Presentation date： 2013
Polarization control of c-axis normal ScAlN film by ion beam irradiation

International Symposium on Advanced Plasma Science and its Applications

Presentation date： 2013
c軸配向ZnO薄膜における基板へのイオン照射を用いたZn面またはO面極性制御

Presentation date： 2012
MHz域における骨の電気機械変換特性

Presentation date： 2012
c軸傾斜配向ZnO膜/石英基板構造のレイリーSAWにおける高い電気機械結合係数

Presentation date： 2012
RFバイアススパッタ法によるc軸平行配向AlN及びScAlN薄膜の形成

Presentation date： 2012
RFマグネトロンスパッタ法における基板へのイオン照射を用いた c軸配向ZnO薄膜の極性制御

Presentation date： 2012
圧電薄膜の配向制御技術と液中横波励振

Presentation date： 2012
マグネトロンスパッタ源から生成される高エネルギー負イオン照射によるZnO膜の配向制御

Presentation date： 2012
c軸平行配向ZnO膜を用いたSH-SAWセンサによる液体の導電率測定

Presentation date： 2012
イオンビームアシストスパッタ法によるc軸平行AlN薄膜/石英基板の形成

Presentation date： 2012
マグネトロンスパッタ源から生成する高速負イオンを利用したZnO膜の配向制御

Presentation date： 2012
(0001)配向AlNおよびScAlN薄膜を用いた極性反転共振子

Presentation date： 2012
Sc粒スパッタによる巨大圧電性(0001)ScAlN薄膜の作製 -効率的なSc代替材料探索を目指した成膜法-

Presentation date： 2012
希土類－III-IV族系巨大圧電性薄膜やＰＺＴ単結晶薄膜の相境界の実験的研究

Presentation date： 2012
Al2O3粒スパッタ法よる(0001)配向ScAlN薄膜の極性制御と極性反転共振子

Presentation date： 2012
巨大圧電性 (0001) ScAlGaN薄膜

Presentation date： 2012
c 軸垂直極性反転ScAlN 多層膜を用いた高次モード音響共振子

Presentation date： 2012
イオンビーム照射成膜による(0001)配向ScAlN薄膜の極性制御と極性反転構造の実現

Presentation date： 2012
Sc粒スパッタによる巨大圧電性(0001)ScAlN薄膜共振子の作製

Presentation date： 2012
c軸平行配向AlN圧電膜を用いた高次モード極性反転すべりモード共振子

Presentation date： 2012
High electromechanical coupling of PMnN-PZT thin film resonator operating in the GHz range

IEEE International Ultrason. Symp

Presentation date： 2012
Fast hypersonic velocity measurement by Brillouin scattering from induced phonons

IEEE International Ultrason. Symp

Presentation date： 2012
Metal grain ingot sputtering method for ScAlN film fabrication and for searching alternative element of Sc

IEEE International Ultrason. Symp

Presentation date： 2012
Polarization inverted (0001)/(000-1) ScAlN film resonators operating in second overtone mode

IEEE International Ultrason. Symp

Presentation date： 2012
Micro liquid viscometer by thickness-shear mode resonator with c-axis parallel oriented ZnO film

IEEE International Ultrason. Symp

Presentation date： 2012
Bone ultrasound transducer in the MHz range

IEEE International Ultrason. Symp

Presentation date： 2012
Fabrication of c-axis parallel oriented AlN and ScAlN films by RF bias sputtering

IEEE International Ultrason. Symp

Presentation date： 2012
Polarization control of the c-axis oriented ZnO films by ion bombardment during an RF magnetron sputtering

IEEE International Ultrason. Symp

Presentation date： 2012
Sc 粒のスパッタにより作製したScAlN 薄膜の電気機械結合係数

Presentation date： 2011
IBAD 法によるc 軸平行配向AlN 薄膜を用いた極性反転多層膜すべり共振子

Presentation date： 2011
IBAD法を用いたc軸平行配向AlN薄膜の作製および極性反転すべり共振子への応用

Presentation date： 2011
c軸平行配向ZnO膜/非晶質基板上を伝搬するSH-SAWの電気機械結合係数

Presentation date： 2011
ZnO圧電薄膜によるGHz域の励起フォノンを利用した高速Brillouin散乱測定

Presentation date： 2011
曲面試料上に成膜したZnO 薄膜からの励起フォノンによるBrillouin 散乱

Presentation date： 2011
c軸平行配向ZnO膜/非圧電性基板構造におけるSH-SAWの電気機械結合係数およびセンサ応用の検討

Presentation date： 2011
c軸平行配向AlN薄膜を用いた極性反転すべり共振子

Presentation date： 2011
Polarizaion-inverted multilayered pure shear mode AlN film resonator

IEEE International Ultrason. Symp

Presentation date： 2011
c-axis parallel oriented AlN film resonator fabricated by ion-beam assisted RF magnetron sputtering

IEEE International Ultrason. Symp

Presentation date： 2011
Brillouin scattering from induced phonons excited by the ZnO piezoelectric thin film with a coaxial resonator

IEEE International Ultrason. Symp

Presentation date： 2011
High temperature piezoelectricity in Mn doped ZnO film

IEEE International Ultrason. Symp

Presentation date： 2011
c-axis parallel oriented ZnO film SH-SAW sensor for electrical conductivity measurement in liquid

IEEE International Ultrason. Symp

Presentation date： 2011
Quantitative analysis of the effect of energetic particle bombardment during deposition on (11-20) ZnO piezoelectric films

IEEE International Ultrason. Symp

Presentation date： 2011
Three dimensional anisotropy of ultrasonic wave velocity in bovine cortical bone - Effects of HAp crystallites orientation and microstructure -

Presentation date： 2010
c-axis parallel oriented ZnO film depositions by variable frequency RF bias sputtering

The 31th Symposium on Ultrasonic Electronics

Presentation date： 2010
Giant shear mode electromechanical coupling in c-axis tilted ScAlN films

Presentation date： 2010
In-plane and out-of-plane orientation control of AlN films by ion beam assisted RF magnetron sputtering

Presentation date： 2010
Observation of induced phonons by ZnO transducer with coaxial microwave resonator using Brillouin scattering

The 31th Symposium on Ultrasonic Electronics

Presentation date： 2010
ウシ左右大腿骨皮質骨中の特徴的な3次元音速異方性～最大音速方向の骨軸からのずれについて～

Presentation date： 2010
Brillouin散乱法による同軸共振器と圧電薄膜を用いた励起フォノンの観測

Presentation date： 2010
RFバイアススパッタ法によるc軸平行配向ZnO薄膜の形成～バイアス周波数が配向性に及ぼす影響～

Presentation date： 2010
c 軸傾斜配向ScAlN 膜の擬似すべりモードにおける巨大圧電性

Presentation date： 2010
Brillouin 散乱法による導電性ZnO 単結晶を用いた擬似すべりモード電気機械結合係数k15´の評価

Presentation date： 2010
RFバイアススパッタ法による簡便な(11-20)および(10-10)配向ZnO膜の形成

Presentation date： 2010
傾斜配向AlN膜の結晶粒界と横波音響特性

Presentation date： 2010
Brillouin散乱法による圧電半導体の面内方向抵抗率評価

Presentation date： 2010
傾斜配向AlN膜の構造が横波音響特性におよぼす影響

Presentation date： 2010
RFバイアススパッタ法による簡便な面内配向ZnO薄膜の形成

Presentation date： 2010
Highest wave velocity direction in the bovine cortical bone: observation of a small tilt relative to the bone axis

IEEE International Ultrasonics Symposium

Presentation date： 2010
Deposition techniques of c-axis-tilted ScAlN films by conventional RF magnetron sputtering

IEEE International Ultrasonics Symposium

Presentation date： 2010
Influence of shadowing effect on shear mode acoustic properties in the c-axis tilted AlN films

IEEE International Ultrasonics Symposium

Presentation date： 2010
Effects of HAp alignment and microstructure on the anisotropy of longitudinal wave velocity in bovine cortical bone

IEEE International Ultrasonics Symposium

Presentation date： 2010
A simple technique for obtaining (11-20) or (10-10) textured ZnO films by RF bias sputtering

IEEE International Ultrasonics Symposium

Presentation date： 2010
Giant shear mode electromechanical coupling coefficient k15 in c-axis tilted ScAlN films

IEEE International Ultrasonics Symposium

Presentation date： 2010
Anisotropy of longitudinal wave velocity in spherically shaped bovine cortical bone

The third international conference on the development of Biomedical Engineering

Presentation date： 2010
Piezoelectric properties of c-axis highly tilted AlN films

The 30th Symposium on Ultrasonic Electronics

Presentation date： 2009
Multilayer shear mode resonator consisting of c-axis tilted ZnO films

The 30th Symposium on Ultrasonic Electronics

Presentation date： 2009
Crystallographic characteristics of (11-20) textured ZnO piezoelectric films fabricated by magnetron sputtering with linear erosion

The 30th Symposium on Ultrasonic Electronics

Presentation date： 2009
Measurement of in-plane electric properties in a wide band-gap semiconductor by Brillouin scattering method

The 30th Symposium on Ultrasonic Electronics

Presentation date： 2009
ウシ大腿骨皮質骨の縦波音速異方性とHAp結晶配向

山本和史, 大和雄, 山崎薫, 長野昭, 矢追佑一郎, 中辻智宏, 松川真美, 柳谷隆彦

日本整形外科学会基礎学術集会

Presentation date： 2009
直線状エロージョンマグネトロンスパッタリングによる(11-20)配向ZnO圧電膜の大面積成膜

Presentation date： 2009
Brillouin散乱法による圧電半導体の面内方向電気特性評価に関する検討

Presentation date： 2009
c軸傾斜反転配向ZnO多層膜の作製と横波共振子への応用

Presentation date： 2009
ウシ大腿骨皮質骨中の超音波縦波音速ハイドロキシアパタイト結晶配向と微細構造の影響

Presentation date： 2009
ヒト及びウシ円環状皮質骨における骨軸方向への超音波伝搬特性

Presentation date： 2009
Brillouin散乱法による圧電半導体の面内方向抵抗率分布の評価

Presentation date： 2009
Relationships between anisotropy of longitudinal wave velocity and HAp orientation in bovine cortical bone

3rd European Symposium on Ultrasonic Characterization of Bone

Presentation date： 2009
Measurement of electric properties in a ZnO single crystal via electromechanical coupling using Brillouin scattering method

IEEE International Ultrasonics Symposium

Presentation date： 2009
Multilayered shear wave resonator consisting of c-axis tilted ZnO films

IEEE International Ultrasonics Symposium

Presentation date： 2009
Anisotropy of longitudinal wave velocity and HAp orientation in bovine cortical bone

International Congress on Ultrasonics (ICU) 2009

Presentation date： 2009
Ultrasonic wave properties in the bone axis direction of human and bovine cortical bone

International Congress on Ultrasonics (ICU) 2009

Presentation date： 2009
Anisotropy of longitudinal ultrasound velocity and HAp orientation in bovine cortical bone

The 29th Symposium on Ultrasonic Electronics

Presentation date： 2008
Pure-shear mode BAW resonator consisting of (1120) textured AlN films

The 29th Symposium on Ultrasonic Electronics

Presentation date： 2008
Electromechanical coupling coefficient of semiconducting piezoelectric crystal measured by Brillouin scattering

The 29th Symposium on Ultrasonic Electronics

Presentation date： 2008
イオン照射による六方晶系薄膜の配向制御と横波モード圧電デバイス

Presentation date： 2008
(11-20)配向AlN圧電薄膜を用いた純横波モード共振子

Presentation date： 2008
Brillouin散乱法を用いた六方晶系圧電薄膜の評価

Presentation date： 2008
Pure-shear mode BAW resonators consisting of (11-20) textured ZnO films

Acoustics 08

Presentation date： 2008
Observation of induced shear acoustic phonons by Brillouin scattering

Acoustic 08

Presentation date： 2008
Ultrasonic wave properties in the bone axis direction of bovine cortical bone

Acoustic 08

Presentation date： 2008
Pure-shear mode BAW resonator consisting of (10-10) and (11-20) textured AlN films

IEEE International Ultrasonics Symposium

Presentation date： 2008
Electromechanical coupling coefficient of semiconducting hexagonal crystal measured by Brillouin scattering

IEEE International Ultrasonics Symposium

Presentation date： 2008
超音波による骨質の評価

Presentation date： 2007
Propagation characteristics of SH-SAW in (11-20) ZnO film/silica glass substrate structures

The 28th Symposium on Ultrasonic Electronics

Presentation date： 2007
A c-axis tilted ZnO film transducer for simultaneous excitation of longitudinal and shear waves

The 28th Symposium on Ultrasonic Electronics

Presentation date： 2007
Texture control of ZnO piezoelectric films by ion beam irradiation

The 28th Symposium on Ultrasonic Electronics

Presentation date： 2007
(11-20)ZnO膜/石英基板構造のSH型SAW伝搬特性

Presentation date： 2007
c軸傾斜配向ZnO膜を用いたVHF帯縦波横波同時励振トランスデューサ

Presentation date： 2007
c軸傾斜配向ZnO 膜を用いた縦波横波同時励振トランスデューサ

Presentation date： 2007
(11-20)面配向ZnO膜/石英基板構造のSH型SAW伝搬特性

Presentation date： 2007
Brillouin 散乱法を用いたガラス中の横波励起フォノンの観測

Presentation date： 2007
面内配向ZnO 多結晶膜/基板構造におけるSH 型SAW 特性

Presentation date： 2007
（11-20）ZnO膜/石英基板構造におけるSH型SAW特性

Presentation date： 2007
イオンチャネリング効果によるZnO圧電膜の配向制御に関する検討

Presentation date： 2007
c軸傾斜配向ZnO膜の電気機械結合係数と縦波横波同時励振トランスデューサへの適用

Presentation date： 2007
Thin film stack transducer for simultaneous generation of longitudinal and shear waves at same frequency

IEEE Ultrason. Symp

Presentation date： 2007
Ion beam sputter-deposited ZnO thin film for broadband shear wave excitation in the GHz range

IEEE Ultrason. Symp

Presentation date： 2007
Highly oriented c-axis 23° tilted ZnO films with high quasi-shear mode electromechanical coupling coefficients

IEEE Ultrason. Symp

Presentation date： 2007
Propagation characteristics of SH-SAW in (11 0) ZnO layer/silica glass substrate structures

IEEE Ultrason. Symp

Presentation date： 2007
Effect of the preference of hydroxyapatite crystallites on longitudinal wave velocity at small ROIs in bovine cortical bone

International congress on Ultrasonics

Presentation date： 2007
横波モード圧電デバイスを目的としたイオンビームアシスト蒸着法による面内配向ZnO薄膜の作製

Presentation date： 2006
Observation of induced shear acoustic phonons by Brillouin scattering

Presentation date： 2006
Longitudinal wave velocity and orientation of HAp crystallites in local area of bovine femoral cortical bone

Presentation date： 2006
Characteristics of shear mode FBAR using (11-20) textured ZnO films

Presentation date： 2006
Effects of sputtering gas on the formation of (11-20) textured ZnO films

Presentation date： 2006
c軸傾斜配向ZnO 膜の形成および圧電特性

Presentation date： 2006
面内配向ZnO 膜を用いたすべりモード薄膜共振子の特性

Presentation date： 2006
ウシ皮質骨の弾性異方性と結晶配向性

Presentation date： 2006
面内配向ZnO膜のk15の評価およびすべりモード薄膜共振子への応用

Presentation date： 2006
Elastic anisotropy and crystallites orientation of the bovine cortical bone

17th International Bone Densitometry Workshop

Presentation date： 2006
The effect of hydroxyapatite crystallite orientation on ultrasonic velocity in bovine cortical bone

4th Joint Meeting Acoustical Society of America and Acoustical Society of Japan

Presentation date： 2006
Elastic Anisotropy and Crystallites Orientation in Bovine Cortical Bone

IEEE Ultrason. Symp

Presentation date： 2006
Temperature Characteristics of Pure Shear Mode FBARs Consisted of (11 0) Textured

IEEE Ultrason. Symp

Presentation date： 2006
Study on Formation Mechanism of (11-20) Textured ZnO Films

IEEE Ultrason. Symp

Presentation date： 2006
Effect of the crystallites orientation on the elastic anisotropy in the bovine cortical bone

The 9th Western Pacific Acoustics Conference

Presentation date： 2006
The relationship between acoustic anisotropy and crystal orientation in bovine cortical bone

1st European Symposium on Ultrasonic Characterization of Bone

Presentation date： 2006
牛皮質骨の超音波伝搬特性と結晶配向

Presentation date： 2005
面内配向ZnO薄膜の結晶性向上と膜厚均一化に関する検討

Presentation date： 2005
面内配向ZnO膜の圧電性評価と共振器への応用

Presentation date： 2005
面内配向ZnO膜の電気機械結合係数k15の評価

Presentation date： 2005
面内配向ZnO薄膜の作製条件に関する検討

Presentation date： 2005
面内配向ZnO膜の圧電性

Presentation date： 2005
顕微ブリユアン光散乱法を用いたZnO薄膜の非破壊評価

Presentation date： 2005
(11-20)面配向ZnO圧電膜の結晶性向上および膜厚分布の低減

Presentation date： 2005
面内配向ZnO薄膜を用いた横波トランスデューサの変換特性

Presentation date： 2005
Higher-order shear mode FBAR using polarization-inverted layers of (11 0) textured

IEEE Ultrason. Symp

Presentation date： 2005
Electromechanical coupling coefficient k15 of (11 0) textured ZnO films

IEEE Ultrason. Symp

Presentation date： 2005
顕微ブリユアン光散乱法による面内配向ZnOフィルムの評価

Presentation date： 2004
面内配向ZnO薄膜を用いたトランスデューサの評価

Presentation date： 2004
横波励振を目的とした面内配向ZnO薄膜の結晶性向上に関する検討

Presentation date： 2004
面内配向ZnO 薄膜を用いた横波トランスデューサ

Presentation date： 2004
（11-20）面配向ZnO薄膜による横波トランスデューサの作製

Presentation date： 2004
Shear Wave Transducer Using (11-20) Textured ZnO Film

IEEE Ultrason. Symp

Presentation date： 2004
Nondestructive evaluation of thin ZnO shear transducer by Brillouin scattering

IEEE Ultrason. Symp

Presentation date： 2004
面内配向ZnO 薄膜による横波励振の検討

Presentation date： 2003
横波励振を目的とした面内配向ZnO薄膜の開発

Presentation date： 2003
ZnO薄膜を用いた横波トランスデューサの検討

Presentation date： 2003
金属膜上に作製されたZnO 面内一方向配向膜の特性

Presentation date： 2003

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Research Seeds

大量センサへ配線レスで給電する素子の開発

ナノ・材料

Research Projects

分極反転圧電薄膜を用いた基地局向けの耐電力小型音響共振子フィルタの実現

日本学術振興会科学研究費助成事業挑戦的研究(萌芽)

Project Year :

2021.07

-

2024.03

柳谷隆彦
GHz帯横波斜入射の複素反射率測定による抗原抗体反応の高感度粘弾性計測

日本学術振興会科学研究費助成事業基盤研究(B)

Project Year :

2019.04

-

2022.03

柳谷隆彦, 高柳真司, 吉田憲司, 鈴木雅視

　View Summary

本研究では、抗原抗体反応時の界面での粘弾性変化を用いて、反応を定量を目指すものである。ここで、UHF帯の高周波横波を用いた複素反射率測定法により、液体試料の粘弾性を評価する。液体試料の複素反射係数を測定することにより、横波に関する弾性定数および年度を決定する．先行研究では、測定周波数が数MHzにとどまっているのに対して、本研究では
c軸傾斜配向のScAlN薄膜を用いる。基板付きの擬似すべりモード共振子TSM-HBARを用いて，複素反射率測定をUHF帯において行うことを目的としている。
c軸傾斜反転構造のScAlN薄膜は成長基板をスパッタターゲットに対して、垂直に配置して、スパッタ粒子を斜めに入射させることで、成長させた。さらに反転構造を作るために、途中で基板を１８０度反転させながら、成膜を行った。ここでは、１２層反転層の形成を試みた。断面SEM測定からc軸が４５度程度傾斜してかつ反転した柱状構造が確認できた。さらに極点X線回折法により３次元的な結晶配向性を調査したところ、０００２面の極が仰角４５度付近に明瞭に観測されて、実際の結晶のc軸方向も４５度傾いていることもわかった。また、各層の傾斜角度のばらつきもさほど大きくなく、１２層を一度に測定しても、４５度付近に極が観測された。また動作周波数が数百MHz向けの数μｍの多層構造と数GHz向けの数百nmのものと両方を得ることができた。
Electromagnetical coupling of AlCeN films grown by RF magnetron sputtering

Japan Society for the Promotion of Science Grants-in-Aid for Scientific Research Grant-in-Aid for Challenging Research (Exploratory)

Project Year :

2018.06

-

2021.03

Yanagitani Takahiko

　View Summary

Nitride piezoelectric films are attractive for FBAR filters. Enhancement of piezoelectricity was recently found in ScAlN films. Electromagnetical coupling directly contribute to the low insertion loss and large band width. In this study, CeAlN piezoelectric films were grown by RF magnetron sputtering. omega-scan rocking curve FWHM of the c-axis oriented CeAlN films were found to be 3.3 deg., indicating good crystalline orientation. Electromechanical coupling coefficient of the films was determined to be 4.4 % using HBAR conversion loss method.
Shear mode resonators for detection of biomolecular interactions in liquid

Japan Society for the Promotion of Science Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (B)

Project Year :

2016.04

-

2019.03

Yanagitani Takahiko

　View Summary

In the fluid viscosity evaluation based on the QCM (Quartz Crystal Microbalance), the quartz crystal plate is required to be thinned to improve the measurement sensitivity. The QCM, however, becomes to be fragile due to thinning. Sensitive measurement without cracking of the piezoelectric layer can be expected by using the SMR (Solidly Mounted Resonator). In the previous study, however, the quasi-shear mode electromechanical coupling k’15^2 was only 1.7%. Therefore, we propose the fluid viscosity evaluation with the SMR based on the c-axis tilted ScAlN thin film. k’15^2 of the 48° c-axis tilted ScAlN film is determined as 13.0%. In addition, anti-resonant frequency shifts with changing in glycerin concentration were observed.
Measurement method for polarity-inverted layered piezoelectric thin films using scanning nonlinear dielectric microscopy

Japan Society for the Promotion of Science Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (C)

Project Year :

2015.04

-

2018.03

ODAGAWA HIROYUKI, CHO YASUO

　View Summary

Recently, it is reported that the polarity of ZnO and AlN piezoelectric thin film fabricated by radio frequency (RF) magnetron sputtering method can be switched by changing the growth condition, and polarity-inverted structure has been obtained. In this research, we have developed the quantitative measurement method for the thickness of a polarity inverted layer using canning nonlinear dielectric microscopy (SNDM). We derive an equation that represents the relationship between the output signal and the oscillation frequency of the SNDM probe, and developed the measurement procedure that can determine the thickness of polarity-inverted single layer structure. We applied it to two-dimensional distribution measurements of the layer thickness. Moreover, we investigated the measurement for double layered structure. We showed that it is possible to determine the thickness of two layers by controlling depth profile of electric field inside the measurement materials using a soft probe tip.
Ultrasonic probe using polarity inverted piezoelectric layer

Japan Society for the Promotion of Science Grants-in-Aid for Scientific Research Grant-in-Aid for Challenging Exploratory Research

Project Year :

2015.04

-

2017.03

Yanagitani Takahiko

　View Summary

Polarity inverted multilayered transducers are attractive for high order mode excitation and high power operation. The control of the polarity in ScAlN and ZnO films by ion beam irradiation during film growth were reported. We found that the usual ScAlN and ZnO films grown by a standard planar sputtering possess (0001) Al-polarity and (000-1) O-polarity, respectively. In this study, we considered that the polarity inverted (0001)/(000-1) multilayer can be easily obtained by depositing usual (0001) Al-polar ScAlN film on usual (000-1) O-polar ZnO film. The polarities of the layers were determined by a press test using an oscilloscope. 2nd mode excitations were clearly observed in the longitudinal wave conversion loss in the transducers.
Study on the piezoelectricity in bone in the MHz range

Japan Society for the Promotion of Science Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (B)

Project Year :

2012.04

-

2015.03

MATSUKAWA Mami, ATSUSHI Hosokawa, YOSHIKI Nagatani, TAKAHIKO Yanagitani, HIRONOBU Hoshino

　View Summary

Ultrasonically induced electrical potentials in bone were studied experimentally. The potentials were observed by the irradiation of ultrasonic wave of 10 kPa and showed the existence of piezoelectricity in bone in the MHz range. This result indicates the possible contribution of piezoelectricity on the bone fracture curing process by the ultrasonic irradiation. The induced potentials were observed in the wet bone and did not depend on the alignment of HAp crystallites in bone. The polarity of induced potentials showed site dependence.
A piezoelectric FDTD simulation was performed to estimate the spatial distribution of electric fields during ultrasound propagation in bone. The results showed the dependence of the field on the bone fracture.
Piezoelectric thin film MEMS with giant shear electromechanical coupling

Japan Society for the Promotion of Science Grants-in-Aid for Scientific Research Grant-in-Aid for Young Scientists (B)

Project Year :

2012.04

-

2015.03

YANAGITANI Takahiko

　View Summary

Shear piezoelectric films are attractive for sensors detecting viscosity and conductivity in liquid. High k15 is required for these sensors. We investigated the k15 of the c-axis tilted Sc doped AlN films. k15 of the films showed 16.8 % which is 3.2 times larger than that of AlN single crystal.
Development of non contact piezoelectricity measurement system By Brillouin light scattering

Japan Society for the Promotion of Science Grants-in-Aid for Scientific Research Grant-in-Aid for Challenging Exploratory Research

Project Year :

2012

-

2013

MATSUKAWA Mami, YANAGITANI Takahiko

　View Summary

A non contact and non destructive measurement system of longitudinal wave velocity in GaN crystals was successfully developed by using a Brillouin light scattering technique. This technique enables to measure velocities in the GHz range, where the piezoelectricity in the conductive material is expected to appear. Using this technique, we could obtain the temperature dependence of longitudinal wave velocity in the conductive GaN crystal. In addition, a velocity dispersion was found in the semi conductive GaN crystal, which was similar to the weak relaxation behavior accompanied by the piezoelectric stiffening effect.
Development of surface acoustic wave piezoelectric films sensors for liquid property measurement

Japan Society for the Promotion of Science Grants-in-Aid for Scientific Research Grant-in-Aid for Young Scientists (B)

Project Year :

2009

-

2010

YANAGITANI Takahiko

　View Summary

To obtain shear type surface acoustic wave (SAW) thin film sensor, we fabricated the c-axis parallel oriented ZnO film on silica glass substrate. Shear type SAW was excited at first time, by applying VHF electric field to inter digital electrode fabricated on the film. Moreover, shear type SAW was propagated even in the liquid. Finally, the change of the conductiviy in the liquid was detected from the change of the SAW velocity.
面内配向六方晶系薄膜の創製および横波モード共振子型分子間相互作用センサへの応用

日本学術振興会科学研究費助成事業特別研究員奨励費

Project Year :

2007

-

2008

柳谷隆彦

　View Summary

[センサ用材料の合成と圧電性能]ZnOと同じ六方晶系ウルツ型構造を有するAlN膜は耐薬品性に優れているためセンサ用材料に適している。本研究ではイオンビームスパッタ法を用いることで、初めて面内配向AlN膜の合成に成功した。さらに得られた薄膜と比較するために、AlN単結晶のセンサ感度関連物理定数をBrillouin散乱法により測定した。これによりAlN単結晶のバルク横波に関する電気⇔機械変換効率(k_<15>定数)を逆解析なしに決定した。AlN単結晶のk_<15>は0.10でZnOのk_<15>=0.26に比べて小さいことが明らかになった。電気⇔機械結合系センサでは、感度の点においてZnOの方が有利であることがわかった。作製されたAlN膜のk_<15>を測定した結果k_<15>=0.03で、AlN単結晶の約30%程度であった。
[センサ安定性関連物理定数の測定]横波モード単結晶板共振子を作製し、AlN単結晶の横波に関する温度係数(TCF)を決定した。AlN単結晶のTCFは-20ppm/℃でZnOの-35ppm/℃に比べて小さいことが明らかになった。センサの温度安定性の点ではAlNの方が有利であることがわかった。
[センサ材料(ZnO膜)の量産化に関する研究]面内配向ZnO膜の量産化に向けて従来使用していたの3インチ円形陰極ではなく、10インチの矩形陰極を搭載した大型成膜装置を設計し、成膜を行った。この結果、4インチ基板の大部分の領域において同一ウエハ上でc軸が面内に一方向に配向させることに成功した。さらに簡便に面内配向ZnO膜を合成する手法について研究を行い、陽極に直流バイアス電圧を-200V印加することで、大幅な装置の変更なしに面内配向ZnO膜の配向性を改善することができた。これにより面内配向ZnO膜形成のメカニズムの一端が明らかになり、今後さらなる量産化技術の進展が期待できる。

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Misc

Enhanced Electromechanical Coupling Near the Phase Boundary in Wurtzite (Mg,Zn)O and (Sc,Al)N

Junjun Jia, Takahiko Yanagitani

2024 IEEE MTT-S International Conference on Microwave Acoustics &amp; Mechanics (IC-MAM) 2024.05 [Refereed]

Research paper, summary (international conference)

DOI
数百MHz帯超音波を用いた複素反射率測定による生体物質の相互作用の検出

茂木彩音, 柳谷隆彦

電子情報通信学会技術研究報告 ( 123 ) 41 - 46 2023.12
エピタキシャルZnO犠牲層を用いたc軸傾斜エピタキシャルScAlN自立薄膜共振子

小林栞, 柳谷隆彦

電子情報通信学会技術研究報告 ( 123 ) 18 - 23 2023.12
c軸傾斜Sc0.4Al0.6N薄膜の大面積成膜を目指した矩形カソードによる平行平板スパッタリング

石井直輝, 柳谷隆彦

電子情報通信学会技術研究報告 ( 123 ) 53 - 58 2023.12
厚みすべりモードc軸ジグザグScAlN積層を用いたSMR型圧電トランス

白岩和剛, 柳谷隆彦

電子情報通信学会技術研究報告 ( 123 ) 47 - 52 2023.12
PbTiO3エピタキシャル自立薄膜共振子の電気機械結合係数ヒステリシスカーブ

國信聡太, 柳谷隆彦

電子情報通信学会技術研究報告 ( 123 ) 35 - 40 2023.12
積層電極によるScAlN多層薄膜SMRを用いた二重モードBAWフィルタ(DMB)

柴田真之, 柳谷隆彦

電子情報通信学会技術研究報告 ( 123 ) 1 - 6 2023.12
エピ犠牲層エッチングを用いたエピ圧電層/音響ブラッグ反射器構造の作製

渡海智, 柳谷隆彦

電子情報通信学会技術研究報告 ( 123 ) 24 - 29 2023.12
c軸傾斜エピPbTiO3薄膜の高い擬似すべりモード電気機械結合係数

國信聡太, 柳谷隆彦

電子情報通信学会技術研究報告 ( 123 ) 17 - 22 2023.11
高電力性向上を目的とした高次モード分極反転ScAlN薄膜SMR

柴田真之, 柳谷隆彦

電子情報通信学会技術研究報告 ( 123 ) 11 - 16 2023.11
圧電層と基板の音響分離を目指した30層分極反転HBAR

白岩和剛, 柳谷隆彦

電子情報通信学会技術研究報告 ( 123 ) 61 - 66 2023.11
エピ圧電薄膜/エピ音響ブラッグ反射器構造のSMR

渡海智, 柳谷隆彦

電子情報通信学会技術研究報告 ( 123 ) 67 - 72 2023.11
YbGaNおよびYbAlNエピタキシャル薄膜共振子の特性

李嵩, 賈軍軍, 柳谷隆彦

電子情報通信学会技術研究報告 ( 122 ) 74 - 79 2022.12
SiO2遅延層を用いたGHz帯パルスエコー法による音響ブラッグ反射層の機械的通過損失の測定

近藤圭太, 石井直輝, 鈴木基嗣, 柳谷隆彦

電子情報通信学会技術研究報告 ( 122 ) 80 - 85 2022.12
LiNbO3スパッタエピ薄膜のGHz帯励振特性

工藤慎也, 柳谷隆彦

電子情報通信学会技術研究報告 ( 122 ) 86 - 91 2022.12
c軸20°傾斜配向MgZnOエピタキシャル薄膜の擬似横波励振特性

岸大貴, 柳谷隆彦

電子情報通信学会技術研究報告 ( 122 ) 62 - 67 2022.12
基板付き圧電薄膜の kt2評価における電極面積の影響

関崚, 清水祐樹, 近藤圭太, 柳谷隆彦

電子情報通信学会技術研究報告 ( 122 ) 68 - 73 2022.12
基板付き薄膜共振子を用いたScAlN、ZnO、PZT圧電薄膜層のQ値抽出

清水祐樹, 柳谷隆彦

電子情報通信学会技術研究報告 ( 122 ) 56 - 61 2022.12
c軸ジグザク分極反転ScAlN薄膜を用いたBAW送受波型トランスバーサルフィルタ

泉航太、柳谷隆彦

電子情報通信学会技術研究報告 ( 121 ) 5 - 10 2022
Experimental and theoretical investigation of k_t ² and velocity in YbGaN films by DFT

Yuna Koike, Junjun Jia, Masashi Suzuki, Takahiko Yanagitani

2021 IEEE International Ultrasonics Symposium (IUS) 2021.09

DOI
スパッタ法により作製した0.3mmの10MHz帯ScAlN薄板トランスデューサ

岩田直也、柳谷隆彦

電子情報通信学会技術研究報告 ( 121 ) 19 - 24 2021
PbTiO3エピ圧電薄膜を用いた基板裏面におけるGHz超音波の指紋イメージング

佐藤裕友、柳谷隆彦

電子情報通信学会技術研究報告 ( 121 ) 13 - 18 2021
基板付き薄膜共振子の基板内損失を含まない新規kt2評価法と従来法の比較

龍見亮汰、柳谷隆彦

電子情報通信学会技術研究報告 ( 120 ) 57 - 60 2020
ScAlスパッタターゲットから生じる負イオンがScAlN圧電薄膜の結晶配向性や電気機械結合係数に及ぼす影響

木原流唯、髙柳真司、柳谷隆彦

電子情報通信学会技術研究報告 ( 120 ) 51 - 56 2020
レクテナ昇圧素子に向けた傾斜反転ScAlN圧電薄膜トランス

木下紗里那、柳谷隆彦

電子情報通信学会技術研究報告 ( 120 ) 45 - 50 2020
AlNとScAlNにおける非線形性に起因するDCバイアス時の周波数シフトおよび格子ひずみの比較

五月女巧, 柳谷隆彦

電子情報通信学会技術研究報告 120 ( 222 ) 34 - 39 2020
低圧スパッタ成膜で増大する負イオン照射がScAlN薄膜の結晶性と圧電性に及ぼす影響

冨永卓海, 髙柳真司, 柳谷隆彦

電子情報通信学会技術研究報告 120 ( 222 ) 1 - 6 2020
ZnO薄膜を用いた厚みすべりモード共振子の作製と液体負荷時の周波数特性

宮田昌哉, 高柳真司, 松川真美, 柳谷隆彦

電子情報通信学会技術研究報告 119 33 - 37 2019
擬似すべりモードc軸傾斜配向ScAlN圧電薄膜を用いた複素反射率法による液体試料の粘弾性評価

天野凌輔, 山川愉生, 柳谷隆彦

電子情報通信学会技術研究報告 119 19 - 23 2019
「周波数スイッチナブルフィルタを目指した常誘電相PMN-PT/強誘電相PZT分極反転エピ膜音響共振子」

清水貴博, 柳谷隆彦

電子情報通信学会技術研究報告vol. 118, no. 48, pp. 29-34 (2018). 118 ( 48 ) 29 - 34 2018
「レクテナ昇圧素子への応用を目指したc軸ジグザグ配向ScAlN多層圧電薄膜共振子」

唐澤嶺, 柳谷隆彦

電子情報通信学会技術研究報告vol. 118, no. 48, pp. 23-27 (2018). 118 ( 48 ) 23 - 27 2018
「c軸傾斜配向厚みすべりモードScAlN薄膜共振子を用いた液体中生体分子相互作用の検出」

矢崎花, 五月女巧, 唐澤嶺, 高柳真司, 吉田憲司, 柳谷隆彦

電子情報通信学会技術研究報告vol. 118, no. 229, US2018-53, pp. 31-35 (2018). 118 ( 229 ) 31 - 35 2018
「c軸傾斜配向ScAlN薄膜/音響多層膜構造の共振子を用いたUHF帯における液体粘性評価」

山川愉生, 五月女巧, 唐澤嶺, 柳谷隆彦

電子情報通信学会技術研究報告vol. 118, no. 229, US2018-53, pp. 25-29 (2018). 118 ( 229 ) 25 - 29 2018
「基板付き薄膜共振子からの新規kt2評価法と従来法の比較〜共振周波数比法、変換損失法、共振スペクトル法、共振反共振法〜」

戸塚誠, 柳谷隆彦

電子情報通信学会技術研究報告vol. 118, no. 48, pp. 19-24 (2018). 118 ( 48 ) 19 - 24 2018
「分極反転PZT/PTOエピ膜を用いた周波数スイッチナブルなGHz帯共振子」

清水貴博, 森剛志, 柳谷隆彦

電子情報通信学会技術研究報告vol. 118, no. 229, US2018-53, pp. 13-18 (2018). 118 ( 229 ) 13 - 18 2018
「製法の異なるScAl合金スパッタターゲットから発生する負イオンがScAlN薄膜の特性に及ぼす影響〜電子ビーム溶融、アーク溶融、焼結ScAl合金ターゲットの比較〜」

唐澤嶺, 高柳真司, 遠藤結佳, 今川誠, 森坂啓介, 鈴木雄, 柳谷隆彦

電子情報通信学会技術研究報告vol. 118, no. 229, US2018-53, pp. 37-42 (2018). 118 ( 229 ) 37 - 42 2018
「電気機械結合係数kt2=19％のScAlN厚膜を用いた低周波帯80MHzトランスデューサ」

佐野耕平, 唐澤嶺, 柳谷隆彦

電子情報通信学会技術研究報告vol. 117, no. 14, US2017-12, pp.59-63, (2017). 117 ( 14 ) 59 - 63 2017
「コヒーレントフォノン励起を用いたBrillouin散乱法による縦波・横波音速測定の高速化」

川部昌彦, 柳谷隆彦, 柴垣慶明, 高柳真司, 鈴木雅視, 松川真美

電子情報通信学会技術研究報告vol. 117, no. 155, US2017-44, pp. 71-74, (2017). 117 ( 155 ) 71 - 74 2017
「ScAlN薄膜/低TCF基板構造のすべりモード共振子を用いたMHz帯-GHz帯同時粘性評価」

山川愉生, 佐野耕平, 唐澤嶺, 柳谷隆彦

電子情報通信学会技術研究報告vol. 117, no. 155, US2017-42, pp. 61-66, (2017). 117 ( 155 ) 61 - 66 2017
「GHｚ帯で純横波超音波を高効率励振するc軸平行ZnO薄膜トランスデューサ」

森剛志, 鈴木雅視, 柳谷隆彦

電子情報通信学会技術研究報告vol. 116, no. 5, US3026-1, pp.7-12, (2016). 116 ( 5 ) 7 - 12 2016
「ScAlN/ZnO極性反転圧電薄膜を用いた2次モード励振超音波トランデューサ」

森剛志, 鈴木雅視, 柳谷隆彦

電子情報通信学会技術研究報告vol. 116, no. 5, US2016-1, pp.1-6, (2016). 116 ( 5 ) 1 - 6 2016
「Brillouin光散乱を用いたc軸配向薄膜の音速および常屈折率の同時測定」

富田昇太, 柳谷隆彦, 鈴木雅視, 高柳真司, 松川真美

電子情報通信学会技術研究報告vol. 115, no. 102, pp.23-28, (2015). 115 ( 102 ) 23 - 28 2015
「低圧RFマグネトロンスパッタ法によるc軸平行配向ZnO膜の形成とSAW、Lamb波デバイスへの応用」

高柳真司, 柳谷隆彦, Jean-Claude Gerbedoen, Abdelkrim Talbi, 松川真美, Philippe Pernod

電子情報通信学会技術研究報告vol. 115, no. 207, pp.25-30, (2015). 115 ( 207 ) 25 - 30 2015
「c軸平行配向ZnO膜/円管石英構造におけるSH波の多重周回伝搬特性と導電率測定への応用」

日山彰子, 柳谷隆彦, 高柳真司, 松川真美

電子情報通信学会技術研究報告vol. 115, no. 207, pp.19-24, (2015). 115 ( 207 ) 19 - 24 2015
「イオンビームアシストRFマグネトロンスパッタ法を用いて作製したc軸平行配向ScAlN薄膜の電気機械結合係数」

岡峰生, 高柳真司, 柳谷隆彦, 松川真美

電子情報通信学会技術研究報告vol. 115, no. 207, pp.31-35, (2015). 115 ( 207 ) 31 - 35 2015
「共振法およびBrillouin散乱法で測定したScAlN薄膜の弾性定数テンソルのSc濃度依存性」

柳谷隆彦, 市橋隼人, 鈴木雅視, 高柳真司, 松川真美

電子情報通信学会技術研究報告vol. 115, no. 207, pp.37-42, (2015). 115 ( 207 ) 37 - 42 2015
「走査型非線形誘電率顕微法による極性反転層状構造圧電膜の層厚の定量測定」

趙恩慧, 川部昌彦, 高柳真司, 鈴木雅視, 柳谷隆彦, 松川真美

電子情報通信学会技術研究報告vol. 115, no. 246, pp.27-30, (2015). 115 ( 246 ) 27 - 30 2015
「非破壊検査用の高分解能超音波プローブ」

柳谷隆彦, 鈴木雅視, 高柳真司

日本音響学会誌 71 ( 5 ) 230 - 238 2015 [Refereed]

DOI
「超音波により励起される骨中電位の極性について」

常田裕子, 松川沙弥果, 眞野功, 水野勝紀, 柳谷隆彦, 高柳真司, 松川真美

電子情報通信学会技術研究報告vol. 114, no. 229, pp. 19-22, (2014). 114 ( 229 ) 19 - 22 2014
「PbTiO3エピタキシャル薄膜を用いた二次モード分極反転共振子」

片田克吉, 柳谷隆彦, 鈴木雅視, 和佐清孝

電子情報通信学会技術研究報告vol. 114, no. 263, pp. 29-34, (2014). 114 ( 263 ) 29 - 34 2014
「RFマグネトロンスパッタ法における基板へのイオン照射を用いた極性反転ZnO薄膜の作製」

生駒遼, 柳谷隆彦, 高柳真司, 鈴木雅視, 小田川裕之, 松川真美

電子情報通信学会技術研究報告vol. 112, no. 213, pp. 21-25, (2012). 112 ( 213 ) 21 - 25 2012
「ZnO圧電薄膜によるGHz域の励起フォノンを利用した高速Brillouin散乱測定」

杉本剛士, 佐野広幸, 柳谷隆彦, 高柳真司

電子情報通信学会技術研究報告 vol. 111, no. 158, pp. 15-19, (2011). 111 ( 158 ) 15 - 19 2011
「IBAD法を用いたc軸平行配向AlN薄膜の作製および極性反転すべり共振子への応用」

鈴木雅視, 菅沼信広, 柳谷隆彦

電子情報通信学会技術研究報告vol. 111, no. 215, pp. 43-48 (2011) 111 ( 215 ) 43 - 48 2011
「c軸平行配向ZnO膜/非晶質基板上を伝搬するSH-SAWの電気機械結合係数」

中東佑太, 柳谷隆彦, 松川真美, 渡辺好章

電子情報通信学会技術研究報告vol. 111, no. 215, pp. 23-26 (2011). 111 ( 215 ) 23 - 26 2011
「c軸傾斜配向ScAlN膜の擬似すべりモードにおける巨大圧電性」

柳谷隆彦, 荒川和樹, 鈴木雅視, 加納一彦, 勅使河原明彦, 秋山守人

電子情報通信学会技術研究報告 vol. 110, no. 213, pp. 81-86, (2010). 110 ( 213 ) 81 - 86 2010
「ウシ左右大腿骨皮質骨中の特徴的な3次元音速異方性〜最大音速方向の骨軸からのずれについて〜」

中辻知宏, 山本和史, 高柳真司, 柳谷隆彦, 松川真美, 山崎薫

電子情報通信学会技術研究報告vol. 110, no. 213, pp. 63-68, (2010). 110 ( 213 ) 63 - 68 2010
「Brillouin散乱法による同軸共振器と圧電薄膜を用いた励起フォノンの観測」

佐野広幸, 柳谷隆彦, 高柳真司, 松川真美

電子情報通信学会技術研究報告vol. 110, no. 213, pp. 99-103, (2010). 110 ( 213 ) 99 - 103 2010
「RFバイアススパッタ法によるc軸平行配向ZnO薄膜の形成〜バイアス周波数が配向性に及ぼす影響〜」

高柳真司, 柳谷隆彦, 松川真美, 渡辺好章

電子情報通信学会技術研究報告vol. 110, no. 213, pp. 75-80, (2010). 110 ( 213 ) 75 - 80 2010
「牛皮質骨の微細構造とHAp結晶配向が長軸方向縦波音速に与える影響」

矢追佑一郎, 水川裕文, 松川真美, 柳谷隆彦, 山本和史, 大和雄, 山崎薫, 長野昭

電子情報通信学会技術研究報告vol. 107, no. 96, pp. 33-36, (2007) 107 ( 96 ) 33 - 36 2009
「(11-20)ZnO膜/石英基板構造のSH型SAW伝搬特性」

田中厚志, 柳谷隆彦, 松川真美, 渡辺好章

電子情報通信学会技術研究報告vol. 107, no. 233, pp. 31-36, (2007) 107 ( 233 ) 31 - 36 2009
「ウシ大腿骨皮質骨中の超音波縦波音速〜ハイドロキシアパタイト結晶配向と微細構造の影響〜」

中辻知宏, 矢追佑一郎, 松川真美, 山本和史, 山崎薫, 柳谷隆彦

電子情報通信学会技術研究報告vol. 109, pp. 25-29, (2009) 109 25 - 29 2009
「c軸傾斜反転配向ZnO多層膜の作製と横波共振子への応用」

守里直希, 高柳真司, 柳谷隆彦, 松川真美, 渡辺好章

電子情報通信学会技術研究報告vol. 109, no. 213, pp. 53-58 (2009) 109 ( 213 ) 53 - 58 2009
「Brillouin散乱法による圧電半導体の面内方向電気特性評価に関する検討」

柳谷隆彦, 佐野広幸, 松川真美

電子情報通信学会技術研究報告vol. 109, no. 213, pp. 59-64, (2009) 109 ( 213 ) 59 - 64 2009
「直線状エロージョンマグネトロンスパッタリングによる(11-20)配向ZnO圧電膜の大面積成膜」

川本貴之, 柳谷隆彦, 松川真美, 渡辺好章, 森嘉一, 佐々木昌, 大場正利

電子情報通信学会技術研究報告vol. 109, no. 213, pp. 65-70, (2009) 109 ( 213 ) 65 - 70 2009
「c軸傾斜配向ZnO膜の作製および厚みすべりモード電気機械結合係数」

松尾卓也, 田中厚志, 松川真美, 渡辺好章, 柳谷隆彦

電子情報通信学会技術研究報告vol. 106, no. 250, pp. 19-24, (2006) 106 ( 250 ) 19 - 24 2006
「ブリユアン散乱法によるGHz域の増幅横波フォノンの観測」

村田茂雄, 川本貴之, 松川真美, 柳谷隆彦

電子情報通信学会技術研究報告vol. 106, no. 295, pp. 27-30, (2006) 106 ( 295 ) 27 - 30 2006
「面内配向ZnO膜の圧電性評価と共振器への応用」

三島夏樹, 柳谷隆彦, 松川真美, 渡辺好章

電子情報通信学会技術研究報告vol. 105, no. 312, pp. 7-12, (2005) 105 ( 312 ) 7 - 12 2005
「牛皮質骨の構造と縦波伝搬速度の異方性について」

松川真美, 水川裕文, 柳谷隆彦, 大和雄, 山崎薫, 長野昭

電子情報通信学会技術研究報告vol. 105, no. 346, pp. 15-18, (2005) 105 ( 346 ) 15 - 18 2005
「RFマグネトロンスパッタ法により作成した面内配向ZnO圧電薄膜の特性」

野原拓也, 柳谷隆彦, 松川真美, 渡辺好章, 大谷隆彦

電子情報通信学会技術研究報告vol. 104, no. 468, pp. 43-48, (2004) 104 ( 468 ) 43 - 48 2004
「横波励振を目的とした面内配向ZnO薄膜の開発」

柳谷隆彦, 野原拓也, 松川真美, 渡辺好章, 大谷隆彦

電子情報通信学会技術研究報告vol. 103, no. 340, pp. 31-36, (2003) 103 ( 340 ) 31 - 36 2003

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Industrial Property Rights

圧電素子及び圧電変換装置

柳谷隆彦

Patent
Ultrasonic probe and ultrasonic inspection apparatus

S. Oono, K. Sumikawa, T. Takahash, T. Yanagitani

Patent
超音波探触子および超音波検査装置

大野茂, 住川健太, 高橋卓也, 柳谷隆彦

Patent
超音波探触子及び超音波探傷システム

高羅友輔, 柳谷隆彦

Patent
超音波探触子及び超音波探傷システム

高羅友輔, 柳谷隆彦

Patent
Thin film producing method and hexagonal piezoelectric thin film produced thereby

H. Nishio, Y. Mori, Y. Tsurukame, T. Kawamoto, Y. Watanabe, T. Yanagitani

Patent
Thin film producing method

United States Patent, No. US 7951272 B2

Y. Watanabe, T. Yanagitani

Patent
薄膜共振子

特許第5747318号

柳谷隆彦, 鈴木雅視, 渡辺好章

Patent
薄膜製造方法及び前記薄膜製造方法により製造された六方晶系圧電薄膜

特許第5217051号

西尾英俊, 森嘉一, 鶴亀宜崇, 渡辺好章, 柳谷隆彦, 川本貴之

Patent
高次モード薄膜共振器

特許第4784815号

渡辺好章, 柳谷隆彦

Patent

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Syllabus

Master's Thesis (Department of Electrical Engineering and Bioscience)

Graduate School of Advanced Science and Engineering

2024 full year
Master's Thesis (Department of Electrical Engineering and Bioscience)

Graduate School of Advanced Science and Engineering

2024 full year
Seminar on Molecular Sensors and Devices D

Graduate School of Advanced Science and Engineering

2024 fall semester
Seminar on Molecular Sensors and Devices C

Graduate School of Advanced Science and Engineering

2024 spring semester
Seminar on Molecular Sensors and Devices B

Graduate School of Advanced Science and Engineering

2024 fall semester
Seminar on Molecular Sensors and Devices A

Graduate School of Advanced Science and Engineering

2024 spring semester
Advanced Seminar B

Graduate School of Advanced Science and Engineering

2024 fall semester
Advanced Seminar A

Graduate School of Advanced Science and Engineering

2024 spring semester
Molecular Sensors and Devices D: Seminar

Graduate School of Advanced Science and Engineering

2024 fall semester
Molecular Sensors and Devices C: Seminar

Graduate School of Advanced Science and Engineering

2024 spring semester
Seminar on Molecular Sensors and Devices B

Graduate School of Advanced Science and Engineering

2024 fall semester
Seminar on Molecular Sensors and Devices A

Graduate School of Advanced Science and Engineering

2024 spring semester
Advanced Seminar B

Graduate School of Advanced Science and Engineering

2024 fall semester
Advanced Seminar A

Graduate School of Advanced Science and Engineering

2024 spring semester
Topics on Molecular Sensors and Devices

Graduate School of Advanced Science and Engineering

2024 spring semester
Research on Molecular Sensors and Devices

Graduate School of Advanced Science and Engineering

2024 full year
Research on Molecular Sensors and Devices

Graduate School of Advanced Science and Engineering

2024 full year
Research on Molecular Sensors and Devices

Graduate School of Advanced Science and Engineering

2024 full year
Scientific Research

School of Advanced Science and Engineering

2024 spring semester
Frontiers of Electrical Engineering and Bioscience [S Grade]

School of Advanced Science and Engineering

2024 spring semester
Frontiers of Electrical Engineering and Bioscience

School of Advanced Science and Engineering

2024 spring semester
Ultrasonic devices

School of Advanced Science and Engineering

2024 fall semester
Plasma Electronics

School of Advanced Science and Engineering

2024 fall semester
Graduation Thesis B [Spring]

School of Advanced Science and Engineering

2024 spring semester
Graduation Thesis B

School of Advanced Science and Engineering

2024 fall semester
Graduation Thesis A [Fall]

School of Advanced Science and Engineering

2024 fall semester
Graduation Thesis A

School of Advanced Science and Engineering

2024 spring semester
Graduation Thesis B [Spring]

School of Advanced Science and Engineering

2024 spring semester
Graduation Thesis B

School of Advanced Science and Engineering

2024 fall semester
Graduation Thesis A

School of Advanced Science and Engineering

2024 spring semester
Project Laboratory B

School of Advanced Science and Engineering

2024 fall semester
Project Laboratory A (2) [S Grade]

School of Advanced Science and Engineering

2024 spring semester
Project Laboratory A (1) [S Grade]

School of Advanced Science and Engineering

2024 spring semester
Project Laboratory A (2)

School of Advanced Science and Engineering

2024 spring semester
Project Laboratory A (1)

School of Advanced Science and Engineering

2024 spring semester
Laboratory C on Electrical Engineering and Bioscience [S Grade]

School of Advanced Science and Engineering

2024 fall semester
Laboratory C on Electrical Engineering and Bioscience

School of Advanced Science and Engineering

2024 fall semester
Laboratory B on Electrical Engineering and Bioscience [S Grade]

School of Advanced Science and Engineering

2024 spring semester
Laboratory B on Electrical Engineering and Bioscience [S Grade]

School of Advanced Science and Engineering

2024 spring semester
Laboratory B on Electrical Engineering and Bioscience (B)

School of Advanced Science and Engineering

2024 spring semester
Laboratory B on Electrical Engineering and Bioscience (A)

School of Advanced Science and Engineering

2024 spring semester
Graduation Thesis Fall [S Grade]

School of Advanced Science and Engineering

2024 fall semester
Graduation Thesis Fall

School of Advanced Science and Engineering

2024 fall semester
Graduation Thesis Spring [S Grade]

School of Advanced Science and Engineering

2024 spring semester
Advanced Bioscience Seminar [S Grade]

School of Advanced Science and Engineering

2024 fall semester
Graduation Thesis Spring

School of Advanced Science and Engineering

2024 spring semester
Advanced Bioscience Seminar

School of Advanced Science and Engineering

2024 fall semester

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Teaching Experience

電磁気学

2016

-

Now
電磁気学演習
物理学演習
物理学実験
プラズマエレクトロニクス

Sub-affiliation

Faculty of Science and Engineering Graduate School of Advanced Science and Engineering

Research Institute

2022

-

2024

Waseda Research Institute for Science and Engineering Concurrent Researcher

Internal Special Research Projects

量産を目指したレクテナ用の圧電トランスの開発

2022 柳谷隆彦

　View Summary

基板が付いたHBAR型の構造の圧電トランスでは単層と多層の間にある厚い基板の多重共振の影響により、駆動周波数が非常に狭帯域になるという問題がある。これに対して、自立構造のFBAR型の圧電トランスではHBAR型と比較して広帯域駆動が可能となる。しかし、作製の過程で薄膜自立構造が必要な上、放熱性や耐久性に問題がある。　本研究では、音響ブラッグ反射器上にScAlNを積層させたc軸ジグザグ配向ScAlN積層型圧電トランスを提案する。この構造では単層からの音波がブラッグ反射されて、基板まで到達しない。そのため基板での多重共振が起きず、HBAR型の圧電トランスよりも格段の広帯域での駆動が可能となる。また、ブラック反射層に熱を逃がすことができるためFBAR型の圧電トランスよりも耐電力性に優れている。 作製した4層のブラッグ反射器上c軸ジグザグScAlN積層型圧電トランスと5層のHBAR型c軸ジグザグScAlN積層圧電トランスの共振周波数付近における入出力電圧比を測定した。その結果、2.7倍の昇圧に成功した。ブラッグ反射器上c軸ジグザグScAlN積層型圧電トランスの比帯域幅は共振周波数の3.22%、HBAR型c軸ジグザグScAlN積層圧電トランスは0.07%であり、およそ46倍の広帯域化を実現した。
分極反転構造圧電薄膜を用いた耐電力性RFフィルタ

2021

　View Summary

圧電効果を用いて波長の短い音波に用いることで、1 mm 角程度の小型フィルタ（BAWフィルタ）がスマートフォンに実用化している。しかし、この方式では耐電力性は1 W程度で、20 W以上が必要な基地局用途では使えない。そのため、基地局用途では、耐電力性を重視して、電磁波をそのまま使った空洞共振器フィルタが使われている。速度の速い電磁波を使うため波長が長く、10 cm以上のサイズとなる。しかしながら、基地局を手軽に大量に設置するニーズは高まるばかりで、小型化が急務である。本研究では、耐電力性の向上が見込まれる分極反転ScAlN多層薄膜SMRの作製および耐電力性の評価系構築に成功した。
５Ｇ向け高耐圧ＲＦフィルタ応用に向けた分極反転多層構造の圧電薄膜の開発

2020

　View Summary

同じ動作周波数の薄膜共振子において、n層の分極反転多層構造の膜厚はn倍となり、耐電圧性を向上できると考えられる。基板をターゲットに対して斜めに配置することで、スパッタされた粒子を基板に対して斜めに入射させて、c軸傾斜したScAlN膜を成長させた。c軸ジグザグ構造は、各層の成膜後に基板を180度回転させることによって得た。4層c軸ジグザグ構造ScAlN薄膜を用いた基板なし(FBAR型)圧電共振子についてネットワークアナライザを用いてSパラメータ測定を行い、４次モードの共振特性を確認した。Masonの等価回路モデルによる計算結果ともよく一致した。
巨大圧電性窒化物の厚膜化による高電圧用圧電アクチュエータの実現

2019

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計画通り、電子ビーム加熱真空溶解法によるScAl合金スパッタターゲットの合成を行った。ターゲットから飛来する酸素負イオンによって下することが予想されている。ScとAlを合金化すると酸化しにくくなる傾向があることがわかっている。今回、高真空還元雰囲気化で、Sc金属とAl金属を混合溶解させ、ScAl合金スパッタターゲットを作製することに成功した。さらに、。Ｍａｔｌａｂを用いて電気―機械結合等価回路モデルの構築と分極反転層の圧電薄膜の特性シミュレーションを行った。積層の設計やインピーダンスを含めた挿入損失や整合の特性をシミュレーションすることができた。また、圧電厚膜の電気機械結合係数の新しい評価法および計測系の構築も行っている。
高速負イオン発生抑制成膜による希土類添加AIN薄膜の巨大圧電性発現

2018 唐澤嶺, 遠藤結佳, 清水貴博, 正宗千明, 松田有佳

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本研究では，製法及び不純物含有量の異なるScAl合金ターゲットを用意し，スパッタ成膜時に発生する負イオン照射量及びScAlN薄膜の圧電性へ及ぼす影響を比較した．アーク溶融ターゲット，焼結ターゲット，電子ビーム溶融ターゲットの3種類のScAl合金ターゲットについてスパッタ成膜中の酸素負イオンO-及び窒化炭素負イオンCN-の発生量を計測した．ScAlN薄膜共振子を作製し，電気機械結合係数kt2を推定した結果，アーク溶融ターゲットで20.6%，焼結ターゲットで20.1%，電子ビーム溶融ターゲットで20.3%と，いずれのターゲットを用いても共に先行研究(kt2=18.5%)よりも高い圧電性を示したが，3種類のターゲットに大きな差は見られなかった．
巨大圧電性薄膜を用いた高感度プローブによる高分解能超音波像装置

2017

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本研究は、超音波映像装置に応用することを目指して、巨大圧電効果を持つ常誘電体薄膜について数十μｍ以上の厚膜成長させる技術を確立することを目的としている。RFマグネトロンスパッタ法を用いて膜応力を低減することで厚さ43μmのScAlN厚膜トランスデューサの作製に成功した．ScAlN(0002)Ｘ線回折ピークのロッキングカーブ半値幅が4.4ºであり良好な配向性を示した。ネットワークアナライザで縦波変換損失を測定した結果、共振周波数が81MHzのときの電気機械結合係数ktは0.43とPZT系に匹敵する値であった．現在、広く実用化されているPVDF高分子膜と比べるとktがはるかに大きいこと示された。
横波超音波の固有振動数変動による抗原抗体反応の高感度質量計測

2015 鈴木雅視

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圧電薄膜の固有振動数変動を用いた高感度質量計測センサについて研究を行った。センサの面積を大きくすれば、それに比例して雑音（共振ピークの雑音）を小さくしていくことができ、測定感度を高くすることができると考えられる。しかし、５０Ω計測系と整合させるにはセンサのキャパシタンスが定まり、おのずと電極面積が決定される。（膜厚は共振周波数で決定）。本研究では、イオンビームスパッタ法を用いて、酸素イオンビームの照射法を反転させることにより、極性が互いに反転したＺｎＯ圧電薄膜を積層成長する技術を開発した。作製した薄膜は高い横波圧電効果を有していることも確認した。これにより、共振周波数を維持したまま膜厚を反転層数倍させ、５０Ω整合したままセンサ面積を反転層数倍させたセンサの作製に成功した。
極性反転多層構造の圧電薄膜を用いた高分解能超音波プロープの実現

2015 鈴木雅視

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超音波顕微鏡装置において画像を高分解能化するには、超音波の高周波化と高出力化が必要である。また、高周波化するには使用する圧電体を薄膜化する。本研究では、圧電薄膜を極性反転多層させることにより、周波数を保ったまま耐電圧性を向上させかつ励振面積を大きくし、超音波出力を向上させるものである。本研究では、圧電薄膜の中では最も圧電性の大きなＳｃＡｌＮ薄膜とＺｎＯ薄膜についてスパッタリング成膜法による成長実験を行った。その結果、ＺｎＯ薄膜では３００℃以上でプラズマ柱外では配向性が良いものが得られ、極性はＯ極性となることがわかった。これに対して、ＳｃＡｌＮ薄膜では室温でプラズマ柱内では配向性が良いものが得られ、極性はＡｌ極性となることを発見した。そこで、この技術を用いてＡｕ上部電極薄膜／Ａｌ極性ＳｃＡｌＮ薄膜／Ｏ極性ＺｎＯ薄膜／高配向Ｔｉ下部電極薄膜／石英ガラス基板構造の極性反転超音波プローブの作製に成功した。励振面積は２層反転することにより予想どおり２倍となった（５０Ω整合時の面積が２倍）。この研究成果に基づいてＩＥＥＥ超音波国際会議おける受賞（2016年）、超音波シンポジウム奨励賞（2016年）、応用物理学会講演奨励賞（2016年）を受賞した。

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