兼担
-
理工学術院 大学院先進理工学研究科
2022/08/11 更新
理工学術院 大学院先進理工学研究科
理工学術院総合研究所 兼任研究員
東京大学 工学系研究科 電気電子工学科
東京大学 工学系研究科 電気電子工学科
東京大学 工学部 電気電子工学科
東京大学 博士(工学)
現在: 早稲田大学・先進理工学部・教授
: NTT物性科学基礎研究所・所長
: NTT物性科学基礎研究所・機能物質科学部・部長
: NTT物性科学基礎研究所・企画担当
: NTT物性科学基礎研究所・グループリーダ
: NTT物性科学基礎研究所・主幹研究員
: NTT基礎研究所・研究推進担当課長
: NTT基礎研究所・主任研究員
: NTT LSI研究所 量子デバイス研究部
: NTT基礎研究所・物性科学研究部
: 日本電信電話株式会社(NTT)武蔵野電気通信研究所 入社
電子情報通信学会
応用物理学会
電気電子材料工学
Ⅲ-V族化合物半導体、窒化物半導体、結晶成長、半導体デバイス
エネルギー
Electrical properties of heavily Si-doped GaAsN after annealing
Takashi Tsukasaki, Naoki Mochida, Miki Fujita, Toshiki Makimoto
Physica B: Condensed Matter 625 2022年01月
Correction: Photoluminescence Mechanism in Heavily Si-Doped GaAsN (Crystal Research and Technology, (2021), 56, 3, (2000143), 10.1002/crat.202000143)
Takashi Tsukasaki, Ren Hiyoshi, Miki Fujita, Toshiki Makimoto
Crystal Research and Technology 56 ( 11 ) 2021年11月
Photoluminescence Mechanism in Heavily Si‐Doped GaAsN
Takashi Tsukasaki, Ren Hiyoshi, Miki Fujita, Toshiki Makimoto
Crystal Research and Technology 56 ( 3 ) 2000143 - 2000143 2021年03月 [査読有り]
Si doping mechanism in Si doped GaAsN
T. Tsukasaki, R. Hiyoshi, M. Fujita, T. Makimoto
J. Cryst. Growth 514 45 - 48 2019年05月 [査読有り]
Hole conduction characteristics of cubic Ti1−xAlxN
Masahiro Yoshikawa, Daiki Toyama, Toshiaki Fujita, Noriaki Nagatomo, Toshiki Makimoto
Thin Solid Films 660 711 - 714 2018年 [査読有り]
Effects of surface barrier layer in AlGaAs/GaAs solar cells
Hiroyuki Urabe, Makoto Kuramoto, Tomohiro Nakano, Atsushi Kawaharazuka, Toshiki Makimoto, Yoshiji Horikoshi
JOURNAL OF CRYSTAL GROWTH 425 330 - 332 2015年09月 [査読有り]
Optical properties of AlxGa1-xAs/GaAs superlattice solar cells
Makoto Kuramoto, Hiroyuki Urabe, Tomohiro Nakano, Atsushi Kawaharazuka, Jiro Nishinaga, Toshiki Makimoto, Yoshiji Horikoshi
JOURNAL OF CRYSTAL GROWTH 425 333 - 336 2015年09月 [査読有り]
Study of single crystal CuInSe2 thin films and CuGaSe2/CuInSe2 single quantum well grown by molecular beam epitaxy
Sathiabama Thiru, Masaki Asakawa, Kazuki Honda, Atsushi Kawaharazuka, Atsushi Tackeuchi, Toshiki Makimoto, Yoshiji Horikoshi
JOURNAL OF CRYSTAL GROWTH 425 203 - 206 2015年09月 [査読有り]
A new AlON buffer layer for RF-MBE growth of AlN on a sapphire substrate
T. Makimoto, K. Kumakura, M. Maeda, H. Yamamoto, Y. Horikoshi
JOURNAL OF CRYSTAL GROWTH 425 138 - 140 2015年09月 [査読有り]
Suppression of self-heating effect in AlGaN/GaN high electron mobility transistors by substrate-transfer technology using h-BN
Masanobu Hiroki, Kazuhide Kumakura, Yasuyuki Kobayashi, Tetsuya Akasaka, Toshiki Makimoto, Hideki Yamamoto
APPLIED PHYSICS LETTERS 105 ( 19 ) 193509 2014年11月 [査読有り]
GaN on h-BN technology for release and transfer of nitride devices
Masanobu Hiroki, Kazuhide Kumakura, Yasuyuki Kobayashi, Tetsuya Akasaka, Hideki Yamamoto, Toshiki Makimoto
2014 4TH IEEE INTERNATIONAL WORKSHOP ON LOW TEMPERATURE BONDING FOR 3D INTEGRATION (LTB-3D) 31 - 31 2014年 [査読有り]
Layered boron nitride as a release layer for mechanical transfer of GaN-based devices
Yasuyuki Kobayashi, Kazuhide Kumakura, Tetsuya Akasaka, Hideki Yamamoto, Toshiki Makimoto
2014 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW) 2014年 [査読有り]
Graphene Layer Formation on Polycrystalline Nickel Grown by Chemical Vapor Deposition
Kenichi Kanzaki, Hiroki Hibino, Toshiki Makimoto
JAPANESE JOURNAL OF APPLIED PHYSICS 52 ( 3 ) 35103 2013年03月 [査読有り]
A Vertical InGaN/GaN Light-Emitting Diode Fabricated on a Flexible Substrate by a Mechanical Transfer Method Using BN
Toshiki Makimoto, Kazuhide Kumakura, Yasuyuki Kobayashi, Tetsuya Akasaka, Hideki Yamamoto
APPLIED PHYSICS EXPRESS 5 ( 7 ) 72102 2012年07月 [査読有り]
Layered boron nitride as a release layer for mechanical transfer of GaN-based devices
Yasuyuki Kobayashi, Kazuhide Kumakura, Tetsuya Akasaka, Toshiki Makimoto
NATURE 484 ( 7393 ) 223 - 227 2012年04月 [査読有り]
Low-temperature characteristics of the current gain of GaN/InGaN double-heterojunction bipolar transistors
Atsushi Nishikawa, Kazuhide Kumakura, Makoto Kasu, Toshiki Makimoto
JOURNAL OF CRYSTAL GROWTH 311 ( 10 ) 3000 - 3002 2009年05月 [査読有り]
High-temperature characteristics up to 590 degrees C of a pnp AlGaN/GaN heterojunction bipolar transistor
Kazuhide Kumakura, Toshiki Makimoto
APPLIED PHYSICS LETTERS 94 ( 10 ) 103502 2009年03月 [査読有り]
Improvement of device characteristics in MIS AlGaN/GaN heterostructure field-effect transistors by designing insulator/AlGaN structures
Narihiko Maeda, Masanobu Hiroki, Toshiki Makimoto, Takatomo Enoki, Takashi Kobayashi
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2 6 ( 0 ) S1049 - S1052 2009年 [査読有り]
Hexagonal boron nitride grown by MOVPE
Y. Kobayashi, T. Akasaka, T. Makimoto
JOURNAL OF CRYSTAL GROWTH 310 ( 23 ) 5048 - 5052 2008年11月 [査読有り]
High-temperature characteristics of AlxGa1-xN-based vertical conducting
Atsushi Nishikawa, Kazuhide Kumakura, Makoto Kasu, Toshiki Makimoto
JAPANESE JOURNAL OF APPLIED PHYSICS 47 ( 4 ) 2838 - 2840 2008年04月 [査読有り]
High performance pnp AlGaN/GaN heterojunction bipolar transistors on GaN substrates
Kazuhide Kumakura, Toshiki Makimoto
APPLIED PHYSICS LETTERS 92 ( 15 ) 153509 2008年04月
Carrier transport mechanisms of Pnp AlGaN/GaN heterojunction bipolar transistors
Kazuhide Kumakura, Toshiki Makimoto
APPLIED PHYSICS LETTERS 92 ( 9 ) 93504 2008年03月 [査読有り]
窒化アルミニウム系LEDの研究開発
牧本俊樹, 谷保芳孝, 嘉数誠
Material Stage 8 ( 3 ) 49 - 51 2008年
Origin of growth defects in CVD diamond epitaxial films
A. Tallaire, M. Kasu, K. Ueda, T. Makimoto
DIAMOND AND RELATED MATERIALS 17 ( 1 ) 60 - 65 2008年01月 [査読有り]
High-temperature (300 °C) operation of npn -type GaN/InGaN double heterojunction bipolar transistors
Atsushi Nishikawa, Kazuhide Kumakura Makoto, Toshiki Makimoto
physica status solidi (c) 5 ( 9 ) 2957 - 2959 2008年 [査読有り]
Growth of (Cu,C)Ba2CuOy thin films by molecular-beam epitaxy
H. Shibata, S. Karimoto, T. Makimoto
PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS 463 939 - 941 2007年10月 [査読有り]
Deposition of NdBa2Cu3O7-delta thin films on large area of over 5 in. in diameter
S. Karimoto, H. Sato, H. Shibata, T. Makimoto
PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS 463 927 - 929 2007年10月 [査読有り]
Temperature dependence of current-voltage characteristics of npn-type GaN/InGaN double heterojunction bipolar transistors
Atsushi Nishikawa, Kazuhide Kumakura, Toshiki Makimoto
APPLIED PHYSICS LETTERS 91 ( 13 ) 133514 2007年09月 [査読有り]
Nonpolar AIBN, (11(2)over-bar-0) and (1(1)over-bar-00) films grown on SiC substrates
Tetsuya Akasaka, Yasuyuki Kobayashi, Toshiki Makimoto
APPLIED PHYSICS LETTERS 91 ( 4 ) 041914 2007年07月 [査読有り]
DC and microwave performance of AlGaN/GaN HEMTs passivated with sputtered SiNx
J. Y. Shiu, V. Desmaris, N. Rorsman, K. Kumakura, T. Makimoto, H. Zirath, E. Y. Chang
SEMICONDUCTOR SCIENCE AND TECHNOLOGY 22 ( 7 ) 717 - 721 2007年07月 [査読有り]
Ultraviolet luminescence from hexagonal boron nitride heteroepitaxial layers on Ni(111) grown by flow-rate modulation epitaxy
Y. Kobayashi, T. Nakamura, T. Akasaka, T. Makimoto, N. Matsumoto
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 244 ( 6 ) 1789 - 1792 2007年06月 [査読有り]
Radiation and polarization properties of free-exciton emission from AlN (0001) surface
Yoshitaka Taniyasu, Makoto Kasu, Toshiki Makimoto
APPLIED PHYSICS LETTERS 90 ( 26 ) 261911 2007年06月 [査読有り]
Oxygen ion implantation isolation planar process for AlGaN/GaN HEMTs
Jin-Yu Shiu, Jui-Chien Huang, Vincent Desmaris, Chia-Ta Chang, Chung-Yu Lu, Kazuhide Kumakura, Toshiki Makimoto, Herbert Zirath, Niklas Rorsman, Edward Yi Chang
IEEE ELECTRON DEVICE LETTERS 28 ( 6 ) 476 - 478 2007年06月 [査読有り]
High breakdown field of pnp GaN/InGaN/AlGaN DHBTs with AlGaN collector
Kazuhide Kumakura, Atsushi Nishikawa, Toshiki Makimoto
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 204 ( 6 ) 2037 - 2041 2007年06月 [査読有り]
Thin film growth of (Cu, C)Ba2Ca(n-1)CunOy (n=1-4) superconductor by molecular beam epitaxy
H. Shibata, S. Karimoto, A. Tsukada, T. Makimoto
JOURNAL OF CRYSTAL GROWTH 301 684 - 686 2007年04月 [査読有り]
Pnp AlGaN/InGaN/GaN Double Heterojunction Bipolar Transistors With Low-Base-Resistance (<100 Ω/square)
K. Kumakura, T. Makimoto
Jpn. J. Appl. Phys. 46 ( 4B ) 2338 - 2340 2007年04月 [査読有り]
Interface microstructure of MgB2/Al-AlOxMgB2 Josephson junctions studied by cross-sectional transmission electron microscopy
Kenji Ueda, Shiro Saito, Kouichi Semba, Toshiki Makimoto, Michio Naito
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 46 ( 12-16 ) L271 - L273 2007年04月 [査読有り]
High critical electric field exceeding 8 MV/cm measured using an AlGaN p-i-n vertical conducting diode on n-SiC substrate
Atsushi Nishikawa, Kazubide Kumakura, Toshiki Makimoto
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 46 ( 4B ) 2316 - 2319 2007年04月 [査読有り]
Diamond-based RF power transistors: Fundamentals and applications
M. Kasu, K. Ueda, Y. Yamauchi, A. Tallaire, T. Makimoto
DIAMOND AND RELATED MATERIALS 16 ( 4-7 ) 1010 - 1015 2007年04月 [査読有り]
Boron nitride thin films grown on graphitized 6H-SiC substrates by metalorganic vapor phase epitaxy
Yasuyuki Kobayashi, Hiroki Hibino, Tomohiro Nakamura, Tetsuya Akasaka, Toshiki Makimoto, Nobuo Matsumoto
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 46 ( 4B ) 2554 - 2557 2007年04月 [査読有り]
High-pressure and high-temperature annealing as an activation method for ion-implanted dopants in diamond
K. Ueda, M. Kasu, T. Makimoto
APPLIED PHYSICS LETTERS 90 ( 12 ) 122102 2007年03月 [査読有り]
Growth of nonpolar AlN (11(2)over-bar0) and (1(1)over-bar00) films on SiC substrates by flow-rate modulation epitaxy
Tetsuya Akasaka, Yasuyuki Kobayashi, Toshiki Makimoto
APPLIED PHYSICS LETTERS 90 ( 12 ) 121919 2007年03月 [査読有り]
Systematic study of insulator deposition effect (Si3N4, SiO2, AlN, and Al2O3) on electrical properties in AlGaN/GaN heterostructures
Narihiko Maeda, Masanobu Hiroki, Noriyuki Watanabe, Yasuhiro Oda, Haruki Yokoyama, Takuma Yagi, Toshiki Makimoto, Takatomo Enoki, Takashi Kobayashi
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 46 ( 2 ) 547 - 554 2007年02月 [査読有り]
選択成長マイクロファセットを用いたGaN系面発光型レーザー [招待論文]
赤坂哲也, 牧本俊樹T. Akasaka, T. Makimoto
レーザー研究 Review of Laser Engineering 35 ( 2 ) 79 - 85 2007年
深紫外光源のための窒化物半導体の開発
牧本俊樹, 谷保芳孝, 嘉数誠, 小林康之, 赤坂哲也
応用物理 76 ( 5 ) 509 - 512 2007年
AIN deep-ultrabiolet light-emitting diodes
Y. Taniyasu, M. Kasu, T. Makimoto
化学と工業 60 ( 8 ) 783 2007年
Threading dislocations in heteroepitaxial AlN layer grown by MOVPE on SiC (0001) substrate
Yoshitaka Taniyasu, Makoto Kasu, Toshiki Makimoto
JOURNAL OF CRYSTAL GROWTH 298 310 - 315 2007年01月 [査読有り]
Minority carrier diffusion lengths in MOVPE-grown n- and p-InGaN and performance of AlGaN/InGaN/GaN double heterojunction bipolar transistors
K. Kumakura, T. Makimoto, N. Kobayashi, T. Hashizume, T. Fukui, H. Hasegawa
JOURNAL OF CRYSTAL GROWTH 298 787 - 790 2007年01月 [査読有り]
Low-resistance graded AlxGa1-xN buffer layers for vertical conducting devices on n-SiC substrates
Atsushi Nishikawa, Kazuhide Kumakura, Tetsuya Akasaka, Toshiki Makimoto
JOURNAL OF CRYSTAL GROWTH 298 819 - 821 2007年01月 [査読有り]
Low on-resistance of GaN p-i-n vertical conducting diodes grown on 4H-SiC substrates
Atsushi Nishikawa, Kazuhide Kumakura, Toshiki Makimoto
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4 NO 7 2007 4 ( 7 ) 2662 - + 2007年 [査読有り]
Insulator engineering in GaN-based MIS HFETs
Narihiko Maeda, Masanobu Hirokia, Noriyuki Watanabe, Yasuhiro Oda, Haruki Yokoyania, Takuma Yagi, Toshiki Makimoto, Takatoino Enokia, Takashi Kobayashi
GALLIUM NITRIDE MATERIALS AND DEVICES II 6473 647316 2007年 [査読有り]
Hexagonal boron nitride on Ni (111) substrate grown by flow-rate modulation epitaxy
Y. Kobayashi, T. Nakamura, T. Akasaka, T. Makimoto, N. Matsumoto
JOURNAL OF CRYSTAL GROWTH 298 325 - 327 2007年01月 [査読有り]
Gate capacitance-voltage characteristics of submicron-long-gate diamond field-effect transistors with hydrogen surface termination
M. Kasu, K. Ueda, Y. Yamauchi, T. Makimoto
APPLIED PHYSICS LETTERS 90 ( 4 ) 43509 2007年01月 [査読有り]
Evidence of quantum dot-like nano-objects in InGaN quantum wells provided by narrow photoluminescence spectra from localized exciton
H. Gotoh, T. Akasaka, T. Tawara, Y. Kobayashi, T. Makimoto, H. Nakano
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4 NO 7 2007 4 ( 7 ) 2350 - + 2007年 [査読有り]
Cathodoluminescence, photoluminescence, and reflectance of an aluminum nitride layer grown on silicon carbide substrate
G. i M. Prinz, A. Ladenburger, M. Schirra, M. Feneberg, K. Thonke, R. Sauer, Y. Taniyasu, M. Kasu, T. Makimoto
JOURNAL OF APPLIED PHYSICS 101 ( 2 ) 23511 2007年01月 [査読有り]
BGaN micro-islands as novel buffers for growth of high-quality GaN on sapphire
Tetsuya Akasaka, Yasuyuki Kobayashi, Toshiki Makimoto
JOURNAL OF CRYSTAL GROWTH 298 320 - 324 2007年01月 [査読有り]
Analysis of electrical properties of insulators (Si3N4, SiO2, AIN, and Al2O3)/0.5 nm Si3N4/AlGaN/GaN heterostructures
Narihiko Maeda, Masanobu Hiroki, Noriyuki Watanabe, Yasuhiro Oda, Haruki Yokoyama, Takurna Yagi, Toshiki Makimoto, Takatomo Enoki, Takashi Kobayashi
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4 NO 7 2007 4 ( 7 ) 2712 - + 2007年 [査読有り]
High-pressure and high-temperature annealing effects on CVD homoepitaxial diamond films
K. Ueda, M. Kasu, A. Tallaire, T. Makimoto
DIAMOND AND RELATED MATERIALS 15 ( 11-12 ) 1789 - 1791 2006年11月 [査読有り]
Characterization of high-quality polycrystalline diamond and its high FET performance
K. Ueda, M. Kasu, Y. Yamauchi, T. Makimoto, M. Schwitters, D. J. Twitchen, G. A. Scarsbrook, S. E. Coe
DIAMOND AND RELATED MATERIALS 15 ( 11-12 ) 1954 - 1957 2006年11月 [査読有り]
Increased electron mobility in n-type Si-doped AlN by reducing dislocation density
Yoshitaka Taniyasu, Makoto Kasu, Toshiki Makimoto
APPLIED PHYSICS LETTERS 89 ( 18 ) 182112 2006年10月 [査読有り]
High breakdown voltage with low on-state resistance of p-InGaN/n-GaN vertical conducting diodes on n-GaN substrates
Atsushi Nishikawa, Kazuhide Kumakura, Toshiki Makimoto
APPLIED PHYSICS LETTERS 89 ( 15 ) 153509 2006年10月 [査読有り]
Growth of (Cu,C)Ba2Ca((n-1))CunOy thin films by molecular-beam epitaxy
H. Shibata, S. Karimoto, A. Tsukada, T. Makimoto
PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS 445 862 - 864 2006年10月 [査読有り]
Critical electric fields of AlGaN in AlGaN-based vertical conducting diodes on n-SiC substrates
Atsushi Nishikawa, Kazuhide Kumakura, Tetsuya Akasaka, Toshiki Makimoto
SUPERLATTICES AND MICROSTRUCTURES 40 ( 4-6 ) 332 - 337 2006年10月 [査読有り]
InGaN quantum wells with small potential fluctuation grown on InGaN underlying layers
Tetsuya Akasaka, Hideki Gotoh, Yasuyuki Kobayashi, Hidetoshi Nakano, Toshiki Makimoto
APPLIED PHYSICS LETTERS 89 ( 10 ) 101110 2006年09月 [査読有り]
Diamond FET using high-quality polycrystalline diamond with f(T) of 45 GHz and f(max) of 120 GHz
K. Ueda, M. Kasu, Y. Yamauchi, T. Makimoto, M. Schwitters, D. J. Twitchen, G. A. Scarsbrook, S. E. Coe
IEEE ELECTRON DEVICE LETTERS 27 ( 7 ) 570 - 572 2006年07月 [査読有り]
Growth of GaN on sapphire substrates using novel buffer layers of ECR-plasma-sputtered Al2O3/graded-AlON/AlN/Al2O3
Kazuhide Kumakura, Toshiki Makimoto
JOURNAL OF CRYSTAL GROWTH 292 ( 1 ) 155 - 158 2006年06月 [査読有り]
RF and DC characteristics in Al2O3/Si3N4 insulated-gate AlGaN/GaN heterostructure field-effect transistors with regrown ohmic structure
N Maeda, T Makimura, T Maruyama, CX Wang, M Hiroki, H Yokoyama, T Makimoto, T Kobayashi, T Enoki
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 203 ( 7 ) 1861 - 1865 2006年05月 [査読有り]
An aluminium nitride light-emitting diode with a wavelength of 210 nanometres
Y Taniyasu, M Kasu, T Makimoto
NATURE 441 ( 7091 ) 325 - 328 2006年05月 [査読有り]
p-InGaN/n-GaN vertical conducting diodes on n(+)-SiC substrate for high power electronic device applications
A Nishikawa, K Kumakura, T Akasaka, T Makimoto
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 45 ( 4B ) 3387 - 3390 2006年04月 [査読有り]
Temperature dependent DC and RF performance of diamond MESFET
H. Ye, M. Kasu, K. Ueda, Y. Yamauchi, N. Maeda, S. Sasaki, T. Makimoto
DIAMOND AND RELATED MATERIALS 15 ( 4-8 ) 787 - 791 2006年04月 [査読有り]
RF performance of diamond metel-semiconductor field-effect transistor at elevated temperatures and analysis of its equivalent circuit
Haitao Ye, Makoto Kasu, Kenji Ueda, Yoshiharu Yamauchi, Narihiko Maeda, Satoshi Sasaki, Toshiki Makimoto
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 45 ( 4B ) 3609 - 3613 2006年04月 [査読有り]
Influence of lattice constants of GaN and InGaN on npn-type GaN/InGaN heterojunction bipolar transistors
Toshiki Makimoto, Takatoshi Kido, Kazuhide Kumakura, Yoshitaka Taniyasu, Makoto Kasu, Nobuo Matsumoto
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 45 ( 4B ) 3395 - 3397 2006年04月 [査読有り]
Influence of Impurity of MgO Substrates on Properties of Molecular Beam Epitaxy-Grown Superconducting NdBa2Cu3O7-δ Thin Films
S. Karimoto, H. Sato, T. Makimoto
Jpn. J. Appl. Phys. 45 ( 12-16 ) L419 - L421 2006年04月 [査読有り]
High critical electric field of AlxGa1-xN p-i-n vertical conducting diodes on n-SiC substrates
A Nishikawa, K Kumakura, T Akasaka, T Makimoto
APPLIED PHYSICS LETTERS 88 ( 17 ) 173508 2006年04月 [査読有り]
High RF output power for H-terminated diamond FETs
M. Kasu, K. Ueda, H. Ye, Y. Yamauchi, S. Sasaki, T. Makimoto
DIAMOND AND RELATED MATERIALS 15 ( 4-8 ) 783 - 786 2006年04月 [査読有り]
High RF output power for H-terminated diamond FETs
M. Kasu, K. Ueda, H. Ye, Y. Yamauchi, S. Sasaki, T. Makimoto
DIAMOND AND RELATED MATERIALS 15 ( 4-8 ) 783 - 786 2006年04月 [査読有り]
Growth of boron nitride on 6H-SiC substrate by flow-rate modulation epitaxy
Yasuyuki Kobayashi, Toshiki Makimoto
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 45 ( 4B ) 3519 - 3521 2006年04月 [査読有り]
Effects of nonradiative centers on localized excitons in InGaN quantum well structures
H. Gotoh, T. Akasaka, T. Tawara, Y. Kobayashi, T. Makimoto, H. Nakano
Applied Physics Letters 89 ( 22 ) 222110 2006年
窒化アルミニウムを用いた210nm遠紫外LED
谷保芳孝, 嘉数誠, 牧本俊樹
オプトロニクス ( 11 ) 127 - 130 2006年
SiC基板上に作製した窒化物半導体デバイスの現状と将来 [招待論文]
牧本俊樹
光技術コンタクト 44 ( 12 ) 699 - 709 2006年
Modifying optical properties of InGaN quantum wells by a large piezoelectric polarization
H. Gotoh, T. Tawara, Y. Kobayashi, N. Kobayashi, Y. Yamauchi, T. Makimoto, T. Saitoh
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6 3 ( 6 ) 1974 - 1977 2006年 [査読有り]
Mechanism of superior suppression effect on gate current leakage in ultrathin Al2O3/Si3N4 bilayer-based AlGaN/GaN insulated gate heterostructure field-effect transistors
CX Wang, N Maeda, M Hiroki, H Yokoyama, N Watanabe, T Makimoto, T Enoki, T Kobayashi
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 45 ( 1A ) 40 - 42 2006年01月 [査読有り]
Low-Temperature Growth of MgB2 Thin films with Tc above 38 K
K. Ueda, T. Makimoto
Jpn. J. Appl. Phys. 45 ( 7 ) 5738 - 5741 2006年
High temperature characteristics of doped channel AlGaN/GaN MIS-HFETs with thin AlGaN barrier layer
C. X. Wang, N. Maeda, M. Hiroki, Y. Yokoyama, T. Makimoto, T. Kobayashi, T. Enoki
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6 3 ( 6 ) 2317 - 2320 2006年 [査読有り]
Growth of nitride semiconductors and its application to heterojunction bipolar transistors
T Makimoto, K Kumakura
ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS 89 ( 3 ) 20 - 25 2006年 [査読有り]
Growth of nitride semiconductors and its application to heterojunction bipolar transistors
T Makimoto, K Kumakura
ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS 89 ( 3 ) 20 - 25 2006年 [査読有り]
Flow-rate modulation epitaxy of wurtzite AlBN
T Akasaka, T Makimoto
APPLIED PHYSICS LETTERS 88 ( 4 ) 041902 2006年01月 [査読有り]
Detecting spatially localized えxcitons in InGaN quantum well structures with a micro-photoluminescence technique
H. Gotoh, T, Akasaka T. Tawara, Y. Kobayashi, T. Makimoto, H. Nakano
solid state communications 138 ( 12 ) 590 - 593 2006年 [査読有り]
Aluminum Nitride Deep-ultraviolet Light-emitting Diodes
Y. Taniyasu, M. Kasu, T. Makimoto
NTT Technical Review 4 ( 12 ) 54 - 58 2006年
Current-voltage characteristics of p-InGaN/n-GaN vertical conducting diodes on n(+)-SiC substrates
A Nishikawa, K Kumakura, T Akasaka, T Makimoto
APPLIED PHYSICS LETTERS 87 ( 23 ) 233505 2005年12月 [査読有り]
2W/mm output power density at 1 GHz for diamond FETs
M Kasu, K Ueda, H Ye, Y Yamauchi, S Sasaki, T Makimoto
ELECTRONICS LETTERS 41 ( 22 ) 1249 - 1250 2005年10月 [査読有り]
High drain current density and reduced gate leakage current in channel-doped AlGaN/GaN heterostructure field-effect transistors with Al2O3/Si3N4 gate insulator
N Maeda, CX Wang, T Enoki, T Makimoto, T Tawara
APPLIED PHYSICS LETTERS 87 ( 7 ) 73504 2005年08月 [査読有り]
Silver-assisted growth of NdBa2Cu3O7-delta thin films: An approach for the growth of superior quality ceramic oxide films
J Kurian, H Sato, T Makimoto, M Naito
APPLIED PHYSICS LETTERS 87 ( 2 ) 22501 2005年07月 [査読有り]
Blue-purplish InGaN quantum wells with shallow depth of exciton localization
T Akasaka, H Gotoh, H Nakano, T Makimoto
APPLIED PHYSICS LETTERS 86 ( 19 ) 191902 2005年05月 [査読有り]
Superior suppression of gate current leakage in Al2O3/Si3N4 bilayer-based AlGaN/GaN insulated gate heterostructure field-effect transistors
CX Wang, N Maeda, M Hiroki, T Tawara, T Makimoto, T Kobayahsi, T Enoki
JOURNAL OF ELECTRONIC MATERIALS 34 ( 4 ) 361 - 364 2005年04月 [査読有り]
Strained thick p-InGaN layers for GaN/InGaN heterojunction bipolar transistors on sapphire substrates
T Makimoto, Y Yamauchi, T Kido, K Kumakura, Y Taniyasu, M Kasu, N Matsumoto
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 44 ( 4B ) 2722 - 2725 2005年04月 [査読有り]
Comparison of AlGaN/GaN insulated gate heterostructure field-effect transistors with ultrathin Al2O3/Si3N4 bilayer and Si3N4 single layer
CX Wang, N Maeda, M Hiroki, T Tawara, T Makimoto, T Kobayashi, T Enoki
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 44 ( 4B ) 2735 - 2738 2005年04月 [査読有り]
All-MgB2 Josephson tunnel junctions
K Ueda, S Saito, K Sernba, T Makimoto, M Naito
APPLIED PHYSICS LETTERS 86 ( 17 ) 172502 2005年04月 [査読有り]
Al2O3/Si3N4 insulated gate channel-doped AlGaN/GaN heterostructure field-effect transistors with regrown ohmic structure: Low gate leakage current with high transconductance
N Maeda, T Makimura, CX Wang, M Hiroki, T Makimoto, T Kobayashi, T Enoki
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 44 ( 4B ) 2747 - 2750 2005年04月 [査読有り]
Dispersion relation of InGaN cavity polaritons measured by angle-resolved photoluminescence
T Tawara, H Gotoh, H Kamada, T Akasaka, T Makimoto, T Saitoh, H Nakano
2005 PACIFIC RIM CONFERENCE ON LASERS AND ELECTRO-OPTICS 676 - 677 2005年 [査読有り]
新しい窒化物半導体デバイス
牧本俊樹
NTT技術ジャーナル 17 ( 3 ) 58 - 61 2005年
ナイトライド系結晶成長技術とヘテロ接合バイポーラトランジスタへの応用 [招待論文]
牧本俊樹, 熊倉
電子情報通信学会 論文誌C J88-C ( 7 ) 467 - 473 2005年
Pnp AlGaN/GaN HBTs Operating Under High-Temperature and High-Power
K. Kumakura, T. Makimoto
IEICE Technical Report ED2005-128 47 - 50 2005年
Observation of cavity polaritons in InGaN quantum well microcavities
T Tawara, H Gotoh, T Akasaka, N Kobayashi, T Makimoto, T Saitoh
FOURTH INTERNATIONAL CONFERENCE ON PHYSICS OF LIGHT-MATTER COUPLING IN NANOSTRUCTURES (PLMCN4) 2 ( 2 ) 809 - 812 2005年 [査読有り]
Minority carrier diffusion length in GaN: Dislocation density and doping concentration dependence
K Kumakura, T Makimoto, N Kobayashi, T Hashizume, T Fukui, H Hasegawa
APPLIED PHYSICS LETTERS 86 ( 5 ) 52105 2005年01月 [査読有り]
High-voltage operation with high current gain of pnp AlGaN/GaN heterojunction bipolar transistors with thin n-type GaN base
K Kumakura, T Makimoto
APPLIED PHYSICS LETTERS 86 ( 2 ) 23506 2005年01月 [査読有り]
High power operation of Pnp AlGaN/GaN heterojunction bipolar transistors
K Kumakura, Y Yamauchi, T Makimoto
PHYSICA STATUS SOLIDI C - CONFERENCES AND CRITICAL REVIEWS, VOL 2, NO 7 2 ( 7 ) 2589 - 2592 2005年 [査読有り]
Efficient observation of narrow isolated photoluminescence spectra from spatially localized excitons in InGaN quantum wells
H Gotoh, T Akasaka, T Tawara, Y Kobayashi, T Makimoto, H Nakano
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 44 ( 42-45 ) L1381 - L1384 2005年 [査読有り]
DC and RF characteristics in Al2O3/Si3N4 insulated-gate AlGaN/GaN heterostructure field-effect transistors
N Maeda, T Makimura, T Maruyama, CX Wang, M Hiroki, H Yokoyama, T Makimoto, T Kobayashi, T Enoki
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 44 ( 20-23 ) L646 - L648 2005年 [査読有り]
BGaN micro-islands as novel buffers for GaN hetero-epitaxy
T Akasaka, T Makimoto
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 44 ( 50-52 ) L1506 - L1508 2005年 [査読有り]
Electrical conduction properties of n-type Si-doped AlN with high electron mobility (> 100 cm(2) V-1 s(-1))
Y Taniyasu, M Kasu, T Makimoto
APPLIED PHYSICS LETTERS 85 ( 20 ) 4672 - 4674 2004年11月 [査読有り]
High luminescent efficiency of InGaN multiple quantum wells grown on InGaN underlying layers
T Akasaka, H Gotoh, T Saito, T Makimoto
APPLIED PHYSICS LETTERS 85 ( 15 ) 3089 - 3091 2004年10月 [査読有り]
MOVPE growth and photoluminescence of wurtzite InN
T Matsuoka, H Okamoto, H Takahata, T Mitate, S Mizuno, Y Uchiyama, T Makimoto
JOURNAL OF CRYSTAL GROWTH 269 ( 1 ) 139 - 144 2004年08月 [査読有り]
Properties of (111) diamond homoepitaxial layer and its application to field-effect transistor
M Kasu, M Kubovic, A Aleksov, N Teofilov, R Sauer, E Kohn, T Makimoto
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 43 ( 7B ) L975 - L977 2004年07月 [査読有り]
Magnetic and electric field effects of photoluminescence of excitons bound to nitrogen atom pairs in GaAs
K Onomitsu, T Okabe, T Makimoto, H Saito, M Ramsteiner, HJ Zhu, A Kawaharazuka, K Ploog, Y Horikoshi
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 43 ( 6B ) L756 - L758 2004年06月 [査読有り]
Electron transport properties in lightly Si-doped InGaN films grown by metalorganic vapor phase epitaxy
CX Wang, N Maeda, K Tsubaki, N Kobayashi, T Makimoto
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 43 ( 6A ) 3356 - 3359 2004年06月 [査読有り]
Al2O3 insulated-gate structure for AlGaN/GaN heterostructure field effect transistors having thin AlGaN barrier layers
T Hashizume, S Anantathanasarn, N Negoro, E Sano, H Hasegawa, K Kumakura, T Makimoto
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 43 ( 6B ) L777 - L779 2004年06月 [査読有り]
An InGaN-based horizontal-cavity surface-emitting laser diode
T Akasaka, T Nishida, T Makimoto, N Kobayashi
APPLIED PHYSICS LETTERS 84 ( 20 ) 4104 - 4106 2004年05月 [査読有り]
Fabrication of GaN/Alumina/GaN structure to reduce dislocations in GaN
M Hiroki, K Kumakura, T Makimoto, N Kobayashi, T Kobayashi
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 43 ( 4B ) 1930 - 1933 2004年04月 [査読有り]
Extrinsic base regrowth of p-InGaN for Npn-type GaN/InGaN heterojunction bipolar transistors
T Makimoto, K Kumakura, N Kobayashi
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 43 ( 4B ) 1922 - 1924 2004年04月 [査読有り]
High-power characteristics of GaN/InGaN double heterojunction bipolar transistors
T Makimoto, Y Yamauchi, K Kumakura
APPLIED PHYSICS LETTERS 84 ( 11 ) 1964 - 1966 2004年03月 [査読有り]
Field emission properties of heavily Si-doped AlN in triode-type display structure
Y Taniyasu, M Kasu, T Makimoto
APPLIED PHYSICS LETTERS 84 ( 12 ) 2115 - 2117 2004年03月 [査読有り]
Electron transport properties in AlGaN/InGaN/GaN double heterostructures grown by metalorganic vapor phase epitaxy
CX Wang, K Tsubaki, N Kobayashi, T Makimoto, N Maeda
APPLIED PHYSICS LETTERS 84 ( 13 ) 2313 - 2315 2004年03月 [査読有り]
Influence of epitaxy on the surface conduction of diamond film
M Kasu, M Kubovic, A Aleksov, N Teofilov, Y Taniyasu, R Sauer, E Kohn, T Makimoto, N Kobayashi
DIAMOND AND RELATED MATERIALS 13 ( 2 ) 226 - 232 2004年02月 [査読有り]
AlGaN-based ultraviolet light-emitting diodes grown on bulk AlN substrates
T Nishida, T Makimoto, H Saito, T Ban
APPLIED PHYSICS LETTERS 84 ( 6 ) 1002 - 1003 2004年02月 [査読有り]
Al2O3 insulated-gate structure for current control in AlGaN/GaN HEFTs having thin AlGaN barrier layers
T. Hashizume, S. Anantathanasarn, N. Negoro E, Sano H, Hasegawa K. Kumakura, T. Makimoto
Jpn. J. Appl. Phys. 43 ( 6B ) L777 - L779 2004年
Novel Nitride Semiconductor Devices
T. Makimoto
NTT Technical Review 2 ( 6 ) 12 - 18 2004年
High power extraction of 340-350 nm UV-LEDs
T Nishida, T Ban, H Saito, N Kobayashi, T Makimoto
QUANTUM SENSING AND NANOPHOTONIC DEVICES 5359 387 - 399 2004年 [査読有り]
Triode-type basic display structure using Si-doped AlN field emitters
Y Taniyasu, M Kasu, T Makimoto, N Kobayashi
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 200 ( 1 ) 199 - 201 2003年11月 [査読有り]
Reduction of threading dislocations in crack-free AlGaN by using multiple thin SixAl1-xN interlayers
T Akasaka, T Nishida, Y Taniyasu, M Kasu, T Makimoto, N Kobayashi
APPLIED PHYSICS LETTERS 83 ( 20 ) 4140 - 4142 2003年11月 [査読有り]
High electron concentrations in Si-doped AlN/AlGaN superlattices with high average Al content of 80%
Y Taniyasu, M Kasu, K Kumakura, T Makimoto, N Kobayashi
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 200 ( 1 ) 40 - 43 2003年11月 [査読有り]
Formation of stacking faults containing microtwins in (111) chemical-vapor-deposited diamond homoepitaxial layers
M Kasu, T Makimoto, W Ebert, E Kohn
APPLIED PHYSICS LETTERS 83 ( 17 ) 3465 - 3467 2003年10月 [査読有り]
High current gain (> 2000) of GaN/InGaN double heterojunction bipolar transistors using base regrowth of p-InGaN
T Makimoto, K Kumakura, N Kobayashi
APPLIED PHYSICS LETTERS 83 ( 5 ) 1035 - 1037 2003年08月 [査読有り]
Ohmic contact to p-GaN using a strained InGaN contact layer and its thermal stability
K Kumakura, T Makimoto, N Kobayashi
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 42 ( 4B ) 2254 - 2256 2003年04月 [査読有り]
Mg-acceptor activation mechanism and transport characteristics in p-type InGaN grown by metalorganic vapor phase epitaxy
K Kumakura, T Makimoto, N Kobayashi
JOURNAL OF APPLIED PHYSICS 93 ( 6 ) 3370 - 3375 2003年03月 [査読有り]
Field-emission-display basic structure using Si-doped AlN
Y Taniyasu, M Kasu, T Makimoto, N Kobayashi
TECHNICAL DIGEST OF THE 16TH INTERNATIONAL VACUUM MICROELECTRONICS CONFERENCE 249 - 250 2003年 [査読有り]
Schottky barrier heights of Au, Pd and Ni on n-GaN evaluated using mesa-structure diodes
T Makimoto, M Kashiwa, T Kido, N Matsumoto, K Kumakura, N Kobayashi
5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS 0 ( 7 ) 2393 - 2395 2003年 [査読有り]
High breakdown electric field for Npn-type AlGaN/InGaN/GaN heterojunction bipolar transistors
T Makimoto, K Kumakura, N Kobayashi
COMPOUND SEMICONDUCTORS 2002 174 ( 4 ) 231 - 234 2003年 [査読有り]
High-power characteristics of GaN/InGaN double heterojunction bipolar transistors with a regrown p-InGaN base layer
T Makimoto, Y Yamauchi, K Kumakura
GAN AND RELATED ALLOYS - 2003 798 73 - 78 2003年 [査読有り]
High current injection to a UV-LED grown on a bulk AIN substrate
T Nishida, T Ban, H Saito, T Makimoto
GAN AND RELATED ALLOYS - 2003 798 3 - 9 2003年 [査読有り]
Pnp AlGaN/GaN Heterojunction Bipolar Transistors Operating at 300°C
K. Kumakura, T. Makimoto, N. Kobayashi
physical status solidi (a) 194 ( 2 ) 443 - 446 2002年12月 [査読有り]
Field effect of photoluminescence from excitons bound to nitrogen atom pairs in GaAs
K Onomitsu, A Kawaharazuka, T Okabe, T Makimoto, H Saito, Y Horikoshi
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 41 ( 9 ) 5503 - 5506 2002年09月 [査読有り]
Common-emitter current-voltage characteristics of a Pnp AlGaN/GaN heterojunction bipolar transistor with a low-resistance base layer
K Kumakura, T Makimoto, N Kobayashi
APPLIED PHYSICS LETTERS 80 ( 20 ) 3841 - 3843 2002年05月 [査読有り]
Valence-band discontinuities between InGaN and GaN evaluated by capacitance-voltage characteristics of p-InGaN/n-GaN diodes
T Makimoto, K Kumakura, T Nishida, N Kobayashi
JOURNAL OF ELECTRONIC MATERIALS 31 ( 4 ) 313 - 315 2002年04月 [査読有り]
Common-emitter current-voltage characteristics of a pnp GaN bipolar junction transistor
K Kumakura, T Makimoto, N Kobayashi
APPLIED PHYSICS LETTERS 80 ( 7 ) 1225 - 1227 2002年02月 [査読有り]
Polarization charge densities at p-GaN/n-AlGaN heterojunctions evaluated by capacitance-voltage characteristics
T Makimoto, K Kumakura, N Kobayashi
INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS 0 ( 1 ) 334 - 337 2002年 [査読有り]
Npn InGaN/GaN double heterojunction bipolar transistors with high common-emitter current gains
T Makimoto, K Kumakura, N Kobayashi
COMPOUND SEMICONDUCTORS 2001 170 ( 170 ) 33 - 38 2002年 [査読有り]
N-AlGaN/p-InGaN/n-GaN heterojunction bipolar transistors for high power operation
T Makimoto, K Kumakura, N Kosayasihi
INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS 0 ( 1 ) 95 - 98 2002年 [査読有り]
Modulation of PL recombination processes in N doped GaAs/Al0.33Ga0.67As SQW by electric field
K Onomitsu, A Kawaharazuka, T Okabe, T Makimoto, H Saito, Y Horikoshi
COMPOUND SEMICONDUCTORS 2001 170 ( 170 ) 407 - 411 2002年 [査読有り]
High common-emitter current gains obtained by pnp GaN bipolar junction transistors
K Kumakura, T Makimoto, N Kobayashi
GAN AND RELATED ALLOYS-2001 693 793 - 798 2002年 [査読有り]
Group-III nitride heterojunction bipolar transistors (Invited)
T. Makimoto, K. Kumakura, N. Kobayashi
Proceeding of 21st Electronic Materials Symposium (EMS-21) K5 2002年
Formation of low-resistance Ohmic contact to p-GaN using strained InGaN contact layer (In Japanese)
K. Kumakura, T. Makimoto, N. Kobayashi
Technical Report of IEICE 102 ( 118 ) ED 2002年
Low resistance non-alloy ohmic contact to p-type GaN using Mg-doped InGaN contact layer
K Kumakura, T Makimoto, N Kobayashi
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 188 ( 1 ) 363 - 366 2001年11月 [査読有り]
High current gains obtained by InGaN/GaN double heterojunction bipolar transistors
T Makimoto, K Kumakura, N Kobayashi
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 188 ( 1 ) 183 - 186 2001年11月 [査読有り]
Low-resistance nonalloyed ohmic contact to p-type GaN using strained InGaN contact layer
K Kumakura, T Makimoto, N Kobayashi
APPLIED PHYSICS LETTERS 79 ( 16 ) 2588 - 2590 2001年10月 [査読有り]
High current gains obtained by InGaN/GaN double heterojunction bipolar transistors with p-InGaN base
T Makimoto, K Kumakura, N Kobayashi
APPLIED PHYSICS LETTERS 79 ( 3 ) 380 - 381 2001年07月 [査読有り]
Heavily p-type doping into group-III nitrides and their application to heterojunction bipolar transistors
T. Makimoto, K. Kumakura
NTT R&D 50 ( 1 ) 301 - 309 2001年
GaN系半導体を用いた光・電子デバイス
小林直樹, 熊倉一英, 西田敏夫, 前田就彦, 牧本俊樹, 嘉数誠
応用物理 70 ( 5 ) 513 - 522 2001年
p-InGaN/N-GaN Heterojunction Diodes and Their Application to Heterojunction Bipolar Transistors
T. Makimoto, K. Kumakura, T. Nishida, N. Kobayashi
MRS Proceedings 639 G.13.10.1 - G.13.10.11 2001年
Reduced damage of electron cyclotron resonance etching by In doping into p-GaN
T Makimoto, K Kumakura, N Kobayashi
JOURNAL OF CRYSTAL GROWTH 221 350 - 355 2000年12月 [査読有り]
High hole concentrations in Mg-doped InGaN grown by MOVPE
K Kumakura, T Makimoto, N Kobayashi
JOURNAL OF CRYSTAL GROWTH 221 267 - 270 2000年12月 [査読有り]
Enhanced hole generation in Mg-doped AlGaN/GaN superlattices due to piezoelectric field
K Kumakura, T Makimoto, N Kobayashi
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 39 ( 4B ) 2428 - 2430 2000年04月 [査読有り]
Activation energy and electrical activity of Mg in Mg-doped InxGa1-xN (x < 0.2)
K Kumakura, T Makimoto, N Kobayashi
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS 39 ( 4B ) L337 - L339 2000年04月 [査読有り]
Efficient hole generation above 10(19) cm(-3) in Mg-doped InGaN/GaN superlattices at room temperature
K Kumakura, T Makimoto, N Kobayashi
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS 39 ( 3AB ) L195 - L196 2000年03月 [査読有り]
Short period alloy superlattice for transparent conductive layer of UV-emitter
T Nishida, H Saito, K Kumakura, T Makimoto, N Kobayashi
PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS 1 872 - 874 2000年 [査読有り]
Selectively enhanced Mg incorporation into AlGaN barrier layer of strained layer superlattice
T Nishida, H Saito, K Kumakura, T Makimoto, N Kobayashi
PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS 1 725 - 727 2000年 [査読有り]
Low p-type contact resistance using Mg-doped InGaN and InGaN/GaN superlattices
K Kumakura, T Makimoto, N Kobayashi
PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS 1 797 - 800 2000年 [査読有り]
InGaN/GaN double heterojunction bipolar transistor grown by metalorganic vapor phase epitaxy
T Makimoto, K Kumakura, N Kobayashi
PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS 1 969 - 972 2000年 [査読有り]
High room-temperature hole concentrations above 1019 cm-3 in Mg-doped InGaN/GaN superlattices
K. Kumakura, T. Makimoto, N. Kobayashi
MRS Proceedings 622 T.5.11.1 - T.5.11.6 2000年
MOVPE growth of strained InGaAsN/GaAs quantum wells
H Saito, T Makimoto, N Kobayashi
JOURNAL OF CRYSTAL GROWTH 195 ( 1-4 ) 416 - 420 1998年12月 [査読有り]
Selectivity mechanism of all ultra high vacuum scanning tunneling microscopy based selective area growth
M Kasu, T Makimoto, N Kobayashi
APPLIED SURFACE SCIENCE 130 452 - 456 1998年06月 [査読有り]
Nanoscale patterning and selective growth of GaAs surfaces by ultra-high vacuum scanning tunneling microscopy
M Kasu, T Makimoto, N Kobayashi
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 36 ( 6B ) 3821 - 3826 1997年06月 [査読有り]
Excitonic luminescence and absorption in dilute GaAs1-xNx alloy (x<0.3%)
T Makimoto, H Saito, T Nishida, N Kobayashi
APPLIED PHYSICS LETTERS 70 ( 22 ) 2984 - 2986 1997年06月 [査読有り]
Nanometer-scale selective-area GaAs growth on nitrogen-passivated surfaces using STM and MOMBE
M Kasu, T Makimoto, N Kobayashi
JOURNAL OF CRYSTAL GROWTH 173 ( 3-4 ) 589 - 591 1997年04月 [査読有り]
Selective-area GaAs growth using nitrogen passivation and scanning-tunneling-microscopy modification on a nanometer scale
M Kasu, T Makimoto, N Kobayashi
APPLIED PHYSICS LETTERS 70 ( 9 ) 1161 - 1163 1997年03月 [査読有り]
Origin of nitrogen-pair luminescence in GaAs studied by nitrogen atomic-layer-doping in MOVPE
T Makimoto, H Saito, N Kobayashi
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 36 ( 3B ) 1694 - 1697 1997年03月 [査読有り]
In-situ STM observation of GaAs surfaces after nitridation
T Makimoto, M Kasu, JL Benchimol, N Kobayashi
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 36 ( 3B ) 1733 - 1735 1997年03月 [査読有り]
Formation and etching of thin nitride layers on GaAs using atomic nitrogen and hydrogen
T Makimoto, N Kobayashi
SOLID-STATE ELECTRONICS 41 ( 2 ) 345 - 347 1997年02月 [査読有り]
Photoluminescence characteristics of nitrogen atomic-layer-doped GaAs grown by MOVPE
H Saito, T Makimoto, N Kobayashi
JOURNAL OF CRYSTAL GROWTH 170 ( 1-4 ) 372 - 376 1997年01月 [査読有り]
Nitrogen atomic-layer-doping on Ga-terminated and misoriented GaAs surfaces by metalorganic vapor phase epitaxy using dimethylhydrazine
H Saito, T Makimoto, N Kobayashi
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 35 ( 12B ) L1644 - L1647 1996年12月 [査読有り]
Extremely strong and sharp photoluminescence lines from nitrogen atomic-layer-doped GaAs, AlGaAs and AlGaAS/GaAs single quantum wells
T Makimoto, N Kobayashi
JOURNAL OF ELECTRONIC MATERIALS 25 ( 9 ) 1527 - 1530 1996年09月 [査読有り]
Nitridation of GaAs surfaces using nitrogen molecules cracked by a hot tungsten filament
T Makimoto, N Kobayashi
APPLIED SURFACE SCIENCE 100 403 - 406 1996年07月 [査読有り]
Scanning-tunneling-microscopy modification of nitrogen-passivated GaAs(001) surfaces on a nanometer scale
M Kasu, T Makimoto, N Kobayashi
APPLIED PHYSICS LETTERS 68 ( 13 ) 1811 - 1813 1996年03月 [査読有り]
Extremely sharp photoluminescence lines from nitrogen atomic-layer-doped AlGaAs/GaAs single quantum wells
T Makimoto, N Kobayashi
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 35 ( 2B ) 1299 - 1301 1996年02月 [査読有り]
Anisotropic surface morphology of GaAs (001) surfaces passivated with nitrogen radicals
M Kasu, T Makimoto, N Kobayashi
APPLIED PHYSICS LETTERS 68 ( 7 ) 955 - 957 1996年02月 [査読有り]
Nitrogen Atomic-layer-doping on Ga-terminated and Misoriented GaAs Surfaces by MOVPE Using Dimethylhydrazine
H. Saito, T. Makimoto, N. Kobayashi
Jpn. J. Appl. Phys. 35 1644 - 1647 1996年
SHARP PHOTOLUMINESCENCE LINES FROM NITROGEN ATOMIC-LAYER-DOPED GAAS
T MAKIMOTO, N KOBAYASHI
APPLIED PHYSICS LETTERS 67 ( 5 ) 688 - 690 1995年07月 [査読有り]
NITRIDATION OF GAAS-SURFACES USING NITROGEN THROUGH A HOT TUNGSTEN FILAMENT
T MAKIMOTO, N KOBAYASHI
APPLIED PHYSICS LETTERS 67 ( 4 ) 548 - 550 1995年07月 [査読有り]
HOLE ACCUMULATION IN (IN)GASB/ALSB QUANTUM-WELLS INDUCED BY THE FERMI-LEVEL PINNING OF AN INAS SURFACE
T MAKIMOTO, B BRAR, H KROEMER
JOURNAL OF CRYSTAL GROWTH 150 ( 1-4 ) 883 - 886 1995年05月 [査読有り]
CARBON INCORPORATION MECHANISM IN ATOMIC LAYER EPITAXY OF GAAS AND ALGAAS
N KOBAYASHI, T MAKIMOTO
APPLIED SURFACE SCIENCE 82-3 284 - 289 1994年12月 [査読有り]
CARBON ATOMIC LAYER DOPING IN ALGAAS BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION AND ITS APPLICATION TO A P-TYPE MODULATION-DOPED STRUCTURE
T MAKIMOTO, N KOBAYASHI
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 32 ( 9B ) L1300 - L1303 1993年09月 [査読有り]
HIGH-FREQUENCY INP/INGAAS DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS ON A SI SUBSTRATE
Y MATSUOKA, K KURISHIMA, T MAKIMOTO
IEEE ELECTRON DEVICE LETTERS 14 ( 7 ) 357 - 359 1993年07月 [査読有り]
HIGH 2-DIMENSIONAL ELECTRON-MOBILITY IN SI ATOMIC-LAYER DOPED N-ALGAAS GAAS GROWN BY METALORGANIC CHEMICAL-VAPOR DEPOSITION
T MAKIMOTO, N KOBAYASHI
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 32 ( 5A ) L648 - L649 1993年05月 [査読有り]
CARBON MODULATION-DOPED P-ALGAAS/GAAS HETEROSTRUCTURES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
T MAKIMOTO, SS CHANG
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 31 ( 6B ) L797 - L798 1992年06月 [査読有り]
SUBBAND STRUCTURE OF 2-DIMENSIONAL ELECTRONS AT DOUBLE SILICON-DOPED ATOMIC LAYERS IN GAAS
G KIDO, S YAMADA, T MAKIMOTO
PHYSICA B-CONDENSED MATTER 177 ( 1-4 ) 433 - 436 1992年03月 [査読有り]
INP/INGAAS DOUBLE HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN ON SI
T MAKIMOTO, K KURISHIMA, T KOBAYASHI, T ISHIBASHI
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 30 ( 12B ) 3815 - 3817 1991年12月 [査読有り]
INP/INGAAS DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN ON (100) SI BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
T MAKIMOTO, K KURISHIMA, T KOBAYASHI, T ISHIBASHI
IEEE ELECTRON DEVICE LETTERS 12 ( 7 ) 369 - 371 1991年07月 [査読有り]
CARBON DOPING IN ALGAAS FOR ALGAAS/GAAS GRADED-BASE HETEROJUNCTION BIPOLAR-TRANSISTOR BY FLOW-RATE MODULATION EPITAXY
H ITO, T MAKIMOTO
APPLIED PHYSICS LETTERS 58 ( 24 ) 2770 - 2772 1991年06月 [査読有り]
INP/INGAAS HETEROSTRUCTURE BIPOLAR-TRANSISTORS GROWN AT LOW-TEMPERATURE BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
K KURISHIMA, T MAKIMOTO, T KOBAYASHI, T ISHIBASHI
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 30 ( 2B ) L258 - L261 1991年02月 [査読有り]
INSITU MONITORING OF GAAS GROWTH-PROCESS IN MOVPE BY SURFACE PHOTOABSORPTION METHOD
N KOBAYASHI, T MAKIMOTO, Y YAMAUCHI, Y HORIKOSHI
JOURNAL OF CRYSTAL GROWTH 107 ( 1-4 ) 62 - 67 1991年01月 [査読有り]
InP/InGaAs heterojunction bipolar transistors grown at low temperature by metalorganic chemical vapor transistors
K. Kurishima T, T. Makimoto, T. Kobayashi, T. Ishibashi
Jpn. J. Appl. Phys. 30 L258 - L261 1991年
P+-N+ GAAS TUNNEL JUNCTION DIODES GROWN BY FLOW-RATE MODULATION EPITAXY
T MAKIMOTO, Y HORIKOSHI
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 29 ( 12 ) L2250 - L2253 1990年12月 [査読有り]
SUBBAND MOBILITY OF QUASI-2-DIMENSIONAL ELECTRONS IN SI ATOMIC LAYER DOPED GAAS
S YAMADA, T MAKIMOTO
APPLIED PHYSICS LETTERS 57 ( 10 ) 1022 - 1024 1990年09月 [査読有り]
DECOMPOSITION OF ARSINE AND TRIMETHYLARSENIC ON GAAS INVESTIGATED BY SURFACE PHOTOABSORPTION
Y YAMAUCHI, T MAKIMOTO, N KOBAYASHI, Y HORIKOSHI
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 29 ( 8 ) L1353 - L1356 1990年08月 [査読有り]
INVESTIGATION OF THE DECOMPOSITION PROCESS OF GA ORGANOMETALS IN MOCVD BY THE SURFACE PHOTO-ABSORPTION METHOD
T MAKIMOTO, Y YAMAUCHI, N KOBAYASHI, Y HORIKOSHI
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 29 ( 4 ) L645 - L648 1990年04月 [査読有り]
INSITU OPTICAL MONITORING OF THE GAAS GROWTH-PROCESS IN MOCVD
T MAKIMOTO, Y YAMAUCHI, N KOBAYASHI, Y HORIKOSHI
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 29 ( 2 ) L207 - L209 1990年02月 [査読有り]
EFFECTIVE MASSES OF QUASI-2-DIMENSIONAL ELECTRON-GAS IN SI-ATOMIC LAYER DOPED GAAS
S YAMADA, T MAKIMOTO
INSTITUTE OF PHYSICS CONFERENCE SERIES ( 106 ) 429 - 434 1990年 [査読有り]
INVESTIGATION OF GROWTH-PROCESSES IN FLOW-RATE MODULATION EPITAXY AND ATOMIC LAYER EPITAXY BY NEW INSITU OPTICAL MONITORING METHOD
N KOBAYASHI, T MAKIMOTO, Y YAMAUCHI, Y HORIKOSHI
ACTA POLYTECHNICA SCANDINAVICA-CHEMICAL TECHNOLOGY SERIES 195 ( 195 ) 139 - 145 1990年 [査読有り]
EFFECTIVE MASSES OF QUASI-2-DIMENSIONAL ELECTRON-GAS IN SI-ATOMIC LAYER DOPED GAAS
S YAMADA, T MAKIMOTO
GALLIUM ARSENIDE AND RELATED COMPOUNDS 1989 106 429 - 434 1990年 [査読有り]
ANNEALING PROPERTIES OF SI-ATOMIC-LAYER-DOPED GAAS
Y YAMAUCHI, T MAKIMOTO, Y HORIKOSHI
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 28 ( 10 ) L1689 - L1692 1989年10月 [査読有り]
FLOW-RATE MODULATION EPITAXY OF GAAS AND ALGAAS
N KOBAYASHI, T MAKIMOTO, Y YAMAUCHI, Y HORIKOSHI
JOURNAL OF APPLIED PHYSICS 66 ( 2 ) 640 - 651 1989年07月 [査読有り]
OPTIMAL-GROWTH CONDITIONS OF ALGAAS/GAAS QUANTUM WELLS BY FLOW-RATE MODULATION EPITAXY
Y YAMAUCHI, T MAKIMOTO, Y HORIKOSHI
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 28 ( 2 ) L155 - L158 1989年02月 [査読有り]
ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH HEAVILY C-DOPED BASE LAYERS GROWN BY FLOW-RATE MODULATION EPITAXY
T MAKIMOTO, N KOBAYASHI, H ITO, T ISHIBASHI
APPLIED PHYSICS LETTERS 54 ( 1 ) 39 - 41 1989年01月 [査読有り]
ELECTRON CONDUCTION IN AN ATOMIC-LAYER-DOPED GAAS PLANE
T MAKIMOTO, N KOBAYASHI, Y HORIKOSHI
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 27 ( 5 ) L770 - L772 1988年05月 [査読有り]
ELECTRON CONDUCTION IN GAAS ATOMIC LAYER DOPED WITH SI
T MAKIMOTO, N KOBAYASHI, Y HORIKOSHI
JOURNAL OF APPLIED PHYSICS 63 ( 10 ) 5023 - 5026 1988年05月 [査読有り]
REDUCTION OF DEEP LEVEL CONCENTRATIONS IN GAAS-LAYERS GROWN BY FLOW-RATE MODULATION EPITAXY
T MAKIMOTO, Y YAMAUCHI, Y HORIKOSHI
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 27 ( 2 ) L152 - L154 1988年02月 [査読有り]
Analysis of (AlAs) (GaAs) Monolayer Superlattices Grown by Flow-rate Modulation Epitaxy
L. Tapfer, N. Kobayashi, T. Makimoto, Y. Horikoshi
Journal de Physique 48 ( C-5 ) 521 - 524 1987年11月 [査読有り]
ABRUPT P-TYPE DOPING PROFILE OF CARBON ATOMIC LAYER DOPED GAAS GROWN BY FLOW-RATE MODULATION EPITAXY
N KOBAYASHI, T MAKIMOTO, Y HORIKOSHI
APPLIED PHYSICS LETTERS 50 ( 20 ) 1435 - 1437 1987年05月 [査読有り]
EFFICIENT SI PLANAR DOPING IN GAAS BY FLOW-RATE MODULATION EPITAXY
N KOBAYASHI, T MAKIMOTO, Y HORIKOSHI
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 25 ( 9 ) L746 - L748 1986年09月 [査読有り]
MODULATION DOPED N-ALGAAS/GAAS HETEROSTRUCTURES GROWN BY FLOW-RATE MODULATION EPITAXY
T MAKIMOTO, N KOBAYASHI, Y HORIKOSHI
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 25 ( 6 ) L513 - L515 1986年06月 [査読有り]
Flow-rate modulation epitaxy of GaAs
N. Kobayashi, T. Makimoto, Y. Horikoshi
Proceedings of the Twelfth International Symposium on Gallium Arsenide and Related Compounds 737 - 738 1986年
FLOW-RATE MODULATION EPITAXY OF GAAS
N KOBAYASHI, T MAKIMOTO, Y HORIKOSHI
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 24 ( 12 ) L962 - L964 1985年12月 [査読有り]
REDUCED CARBON CONTAMINATION IN OMVPE GROWN GAAS AND ALGAAS
N KOBAYASHI, T MAKIMOTO
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 24 ( 10 ) L824 - L826 1985年 [査読有り]
SiC基板上に作製した窒化物半導体デバイスの現状と将来 (特集:次世代半導体デバイスとしてのSiC単結晶を用いたオプトメカトロニクス技術)
牧本 俊樹
光技術コンタクト 44 ( 12 ) 699 - 708 2006年12月
GaN Heteroepitaxy on Si(111) substrates Using AlN/AlGaN Superlattice Buffer Layers
AKASAKA Tetsuya, KOBAYASHI Yasuyuki, MAKIMOTO Toshiki
Extended abstracts of the ... Conference on Solid State Devices and Materials 2006 198 - 199 2006年09月
Hexagonal Boron Nitride Heteroepitaxial Layers on Graphitized 6H-SiC Substrate Grown by Metalorganic Vapor Phase Epitaxy
KOBAYASHI Yasuyuki, HIBINO Hiroki, NAKAMURA Tomohiro, AKASAKA Tetsuya, MAKIMOTO Toshiki, MATSUMOTO Nobuo
Extended abstracts of the ... Conference on Solid State Devices and Materials 2006 202 - 203 2006年09月
C-10-11 ダイヤモンドFETの高周波特性と等価回路解析(C-10.電子デバイス,一般講演)
嘉数 誠, 植田 研二, テレア アレクサンダ, 山内 喜晴, 牧本 俊樹
電子情報通信学会ソサイエティ大会講演論文集 2006 ( 2 ) 52 - 52 2006年09月
C-10-10 高品質多結晶ダイヤモンドFETの作製と特性評価(C-10.電子デバイス,一般講演)
植田 研二, 嘉数 誠, 山内 喜晴, 牧本 俊樹, Schwitters M., Twitchen D. J., Scarsbrook G. A., Coe S. E.
電子情報通信学会総合大会講演論文集 2006 ( 2 ) 64 - 64 2006年03月
Flow-rate modulation epitaxy of wurtzite AlBN
AKASAKA Tetsuya, MAKIMOTO Toshiki
Extended abstracts of the ... Conference on Solid State Devices and Materials 2005 136 - 137 2005年09月
Comparison of AlGaN/GaN insulated gate heterostructure field-effect transistors with ultra-thin Al_2O_3/Si_3N_4 bilayer and with Si_3N_4 single layer
WANG Chengxin, MAEDA Narihiko, HIROKI Masanobu, TAWARA Takehiko, SAITOH Tadashi, MAKIMOTO Toshiki, KOBAYASHI Takashi, ENOKI Takotomo
Extended abstracts of the ... Conference on Solid State Devices and Materials 2004 656 - 657 2004年09月
Low-dislocation AlGaN thin films grown using Al_<1-x>Si_xN nano-disks (x=0.07-0.17)
AKASAKA Tetsuya, TANIYASU Yoshitaka, KASU Makoto, MAKIMOTO Toshiki
Extended abstracts of the ... Conference on Solid State Devices and Materials 2004 810 - 811 2004年09月
[Invited]Npn型窒化物半導体ヘテロ接合バイポーラトランジスタ
牧本 俊樹, 熊倉 一英, 小林 直樹
電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス 103 ( 163 ) 5 - 8 2003年07月
Npn型AlGaN/InGaN/GaNヘテロ接合バイポーラトランジスタにおける高い降伏電界
牧本 俊樹, 熊倉 一英, 小林 直樹
電子情報通信学会技術研究報告. MW, マイクロ波 102 ( 559 ) 5 - 10 2003年01月
窒化物半導体層の成長方法
牧本 俊樹
特許権
ヘテロ構造およびその製造方法
牧本 俊樹
特許権
窒化物半導体結晶成長方法
牧本 俊樹, 前田 理也, 堀越 佳治
特許権
窒化物半導体の成長方法
牧本 俊樹, 堀越 佳治, 前田 理也, 小林 祐輝
特許権
平成27年度文部科学大臣表彰受賞(科学技術賞研究部門)
2015年04月
応用物理学会フェロー表彰
2014年09月
高品質GaAsN系超格子の成長と励起子に関する研究
研究期間:
RF-MBE法によるグラフェン上へのエピタキシャルBN成長
研究期間:
六方晶BN窒化物半導体に関する研究
AlONバッファー層を用いた高品質窒化物半導体ヘテロ構造のMBE成長
2014年 熊倉一英, 山本秀樹