Concurrent Post
-
Faculty of Science and Engineering Graduate School of Advanced Science and Engineering
Details of a Researcher
Updated on 2022/05/25
Faculty of Science and Engineering Graduate School of Advanced Science and Engineering
理工学術院総合研究所 兼任研究員
University of Tokyo Graduate School, Division of Engineering Electric engineering
University of Tokyo Graduate School, Division of Engineering Electric engineering
University of Tokyo Faculty of Engineering Electric engineering
University of Tokyo Dr.Eng
現在: 早稲田大学・先進理工学部・教授
: NTT物性科学基礎研究所・所長
: NTT物性科学基礎研究所・機能物質科学部・部長
: NTT物性科学基礎研究所・企画担当
: NTT物性科学基礎研究所・グループリーダ
: NTT物性科学基礎研究所・主幹研究員
: NTT基礎研究所・研究推進担当課長
: NTT基礎研究所・主任研究員
: NTT LSI研究所 量子デバイス研究部
: NTT基礎研究所・物性科学研究部
: 日本電信電話株式会社(NTT)武蔵野電気通信研究所 入社
IEICE (Institute of Electronics, Information and Communication Engineers)
Society of Applied Physics of Japan
Electric and electronic materials
III-V compound semiconductors, nitride semiconductors, crystal growth, semiconductor devices
Photoluminescence Mechanism in Heavily Si‐Doped GaAsN
Takashi Tsukasaki, Ren Hiyoshi, Miki Fujita, Toshiki Makimoto
Crystal Research and Technology 56 ( 3 ) 2000143 - 2000143 2021.03 [Refereed]
Si doping mechanism in Si doped GaAsN
T. Tsukasaki, R. Hiyoshi, M. Fujita, T. Makimoto
J. Cryst. Growth 514 45 - 48 2019.05 [Refereed]
Hole conduction characteristics of cubic Ti1−xAlxN
Masahiro Yoshikawa, Daiki Toyama, Toshiaki Fujita, Noriaki Nagatomo, Toshiki Makimoto
Thin Solid Films 660 711 - 714 2018 [Refereed]
Effects of surface barrier layer in AlGaAs/GaAs solar cells
Hiroyuki Urabe, Makoto Kuramoto, Tomohiro Nakano, Atsushi Kawaharazuka, Toshiki Makimoto, Yoshiji Horikoshi
JOURNAL OF CRYSTAL GROWTH 425 330 - 332 2015.09 [Refereed]
Optical properties of AlxGa1-xAs/GaAs superlattice solar cells
Makoto Kuramoto, Hiroyuki Urabe, Tomohiro Nakano, Atsushi Kawaharazuka, Jiro Nishinaga, Toshiki Makimoto, Yoshiji Horikoshi
JOURNAL OF CRYSTAL GROWTH 425 333 - 336 2015.09 [Refereed]
Study of single crystal CuInSe2 thin films and CuGaSe2/CuInSe2 single quantum well grown by molecular beam epitaxy
Sathiabama Thiru, Masaki Asakawa, Kazuki Honda, Atsushi Kawaharazuka, Atsushi Tackeuchi, Toshiki Makimoto, Yoshiji Horikoshi
JOURNAL OF CRYSTAL GROWTH 425 203 - 206 2015.09 [Refereed]
A new AlON buffer layer for RF-MBE growth of AlN on a sapphire substrate
T. Makimoto, K. Kumakura, M. Maeda, H. Yamamoto, Y. Horikoshi
JOURNAL OF CRYSTAL GROWTH 425 138 - 140 2015.09 [Refereed]
Suppression of self-heating effect in AlGaN/GaN high electron mobility transistors by substrate-transfer technology using h-BN
Masanobu Hiroki, Kazuhide Kumakura, Yasuyuki Kobayashi, Tetsuya Akasaka, Toshiki Makimoto, Hideki Yamamoto
APPLIED PHYSICS LETTERS 105 ( 19 ) 193509 2014.11 [Refereed]
GaN on h-BN technology for release and transfer of nitride devices
Masanobu Hiroki, Kazuhide Kumakura, Yasuyuki Kobayashi, Tetsuya Akasaka, Hideki Yamamoto, Toshiki Makimoto
2014 4TH IEEE INTERNATIONAL WORKSHOP ON LOW TEMPERATURE BONDING FOR 3D INTEGRATION (LTB-3D) 31 - 31 2014 [Refereed]
Layered boron nitride as a release layer for mechanical transfer of GaN-based devices
Yasuyuki Kobayashi, Kazuhide Kumakura, Tetsuya Akasaka, Hideki Yamamoto, Toshiki Makimoto
2014 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW) 2014 [Refereed]
Graphene Layer Formation on Polycrystalline Nickel Grown by Chemical Vapor Deposition
Kenichi Kanzaki, Hiroki Hibino, Toshiki Makimoto
JAPANESE JOURNAL OF APPLIED PHYSICS 52 ( 3 ) 35103 2013.03 [Refereed]
A Vertical InGaN/GaN Light-Emitting Diode Fabricated on a Flexible Substrate by a Mechanical Transfer Method Using BN
Toshiki Makimoto, Kazuhide Kumakura, Yasuyuki Kobayashi, Tetsuya Akasaka, Hideki Yamamoto
APPLIED PHYSICS EXPRESS 5 ( 7 ) 72102 2012.07 [Refereed]
Layered boron nitride as a release layer for mechanical transfer of GaN-based devices
Yasuyuki Kobayashi, Kazuhide Kumakura, Tetsuya Akasaka, Toshiki Makimoto
NATURE 484 ( 7393 ) 223 - 227 2012.04 [Refereed]
Low-temperature characteristics of the current gain of GaN/InGaN double-heterojunction bipolar transistors
Atsushi Nishikawa, Kazuhide Kumakura, Makoto Kasu, Toshiki Makimoto
JOURNAL OF CRYSTAL GROWTH 311 ( 10 ) 3000 - 3002 2009.05 [Refereed]
High-temperature characteristics up to 590 degrees C of a pnp AlGaN/GaN heterojunction bipolar transistor
Kazuhide Kumakura, Toshiki Makimoto
APPLIED PHYSICS LETTERS 94 ( 10 ) 103502 2009.03 [Refereed]
Improvement of device characteristics in MIS AlGaN/GaN heterostructure field-effect transistors by designing insulator/AlGaN structures
Narihiko Maeda, Masanobu Hiroki, Toshiki Makimoto, Takatomo Enoki, Takashi Kobayashi
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2 6 ( 0 ) S1049 - S1052 2009 [Refereed]
Hexagonal boron nitride grown by MOVPE
Y. Kobayashi, T. Akasaka, T. Makimoto
JOURNAL OF CRYSTAL GROWTH 310 ( 23 ) 5048 - 5052 2008.11 [Refereed]
High-temperature characteristics of AlxGa1-xN-based vertical conducting
Atsushi Nishikawa, Kazuhide Kumakura, Makoto Kasu, Toshiki Makimoto
JAPANESE JOURNAL OF APPLIED PHYSICS 47 ( 4 ) 2838 - 2840 2008.04 [Refereed]
High performance pnp AlGaN/GaN heterojunction bipolar transistors on GaN substrates
Kazuhide Kumakura, Toshiki Makimoto
APPLIED PHYSICS LETTERS 92 ( 15 ) 153509 2008.04
Carrier transport mechanisms of Pnp AlGaN/GaN heterojunction bipolar transistors
Kazuhide Kumakura, Toshiki Makimoto
APPLIED PHYSICS LETTERS 92 ( 9 ) 93504 2008.03 [Refereed]
窒化アルミニウム系LEDの研究開発
牧本俊樹, 谷保芳孝, 嘉数誠
Material Stage 8 ( 3 ) 49 - 51 2008
Origin of growth defects in CVD diamond epitaxial films
A. Tallaire, M. Kasu, K. Ueda, T. Makimoto
DIAMOND AND RELATED MATERIALS 17 ( 1 ) 60 - 65 2008.01 [Refereed]
High-temperature (300 degrees C) operation of npn-type GaN/InGaN double heterojunction bipolar transistors
Atsushi Nishikawa, Kazuhide Kumakura, Makoto Kasu, Toshiki Makimoto
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 9 5 ( 9 ) 2957 - 2959 2008 [Refereed]
Growth of (Cu,C)Ba2CuOy thin films by molecular-beam epitaxy
H. Shibata, S. Karimoto, T. Makimoto
PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS 463 939 - 941 2007.10 [Refereed]
Deposition of NdBa2Cu3O7-delta thin films on large area of over 5 in. in diameter
S. Karimoto, H. Sato, H. Shibata, T. Makimoto
PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS 463 927 - 929 2007.10 [Refereed]
Temperature dependence of current-voltage characteristics of npn-type GaN/InGaN double heterojunction bipolar transistors
Atsushi Nishikawa, Kazuhide Kumakura, Toshiki Makimoto
APPLIED PHYSICS LETTERS 91 ( 13 ) 133514 2007.09 [Refereed]
Nonpolar AIBN, (11(2)over-bar-0) and (1(1)over-bar-00) films grown on SiC substrates
Tetsuya Akasaka, Yasuyuki Kobayashi, Toshiki Makimoto
APPLIED PHYSICS LETTERS 91 ( 4 ) 041914 2007.07 [Refereed]
DC and microwave performance of AlGaN/GaN HEMTs passivated with sputtered SiNx
J. Y. Shiu, V. Desmaris, N. Rorsman, K. Kumakura, T. Makimoto, H. Zirath, E. Y. Chang
SEMICONDUCTOR SCIENCE AND TECHNOLOGY 22 ( 7 ) 717 - 721 2007.07 [Refereed]
Ultraviolet luminescence from hexagonal boron nitride heteroepitaxial layers on Ni(111) grown by flow-rate modulation epitaxy
Y. Kobayashi, T. Nakamura, T. Akasaka, T. Makimoto, N. Matsumoto
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 244 ( 6 ) 1789 - 1792 2007.06 [Refereed]
Radiation and polarization properties of free-exciton emission from AlN (0001) surface
Yoshitaka Taniyasu, Makoto Kasu, Toshiki Makimoto
APPLIED PHYSICS LETTERS 90 ( 26 ) 261911 2007.06 [Refereed]
Oxygen ion implantation isolation planar process for AlGaN/GaN HEMTs
Jin-Yu Shiu, Jui-Chien Huang, Vincent Desmaris, Chia-Ta Chang, Chung-Yu Lu, Kazuhide Kumakura, Toshiki Makimoto, Herbert Zirath, Niklas Rorsman, Edward Yi Chang
IEEE ELECTRON DEVICE LETTERS 28 ( 6 ) 476 - 478 2007.06 [Refereed]
High breakdown field of pnp GaN/InGaN/AlGaN DHBTs with AlGaN collector
Kazuhide Kumakura, Atsushi Nishikawa, Toshiki Makimoto
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 204 ( 6 ) 2037 - 2041 2007.06 [Refereed]
Thin film growth of (Cu, C)Ba2Ca(n-1)CunOy (n=1-4) superconductor by molecular beam epitaxy
H. Shibata, S. Karimoto, A. Tsukada, T. Makimoto
JOURNAL OF CRYSTAL GROWTH 301 684 - 686 2007.04 [Refereed]
Pup AlGaN/InGaN/GaN double heterojunction bipolar transistors with low-base-resistance (< 100 Omega/square)
Kazuhide Kumakura, Toshiki Makimoto
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 46 ( 4B ) 2338 - 2340 2007.04 [Refereed]
Interface microstructure of MgB2/Al-AlOxMgB2 Josephson junctions studied by cross-sectional transmission electron microscopy
Kenji Ueda, Shiro Saito, Kouichi Semba, Toshiki Makimoto, Michio Naito
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 46 ( 12-16 ) L271 - L273 2007.04 [Refereed]
High critical electric field exceeding 8 MV/cm measured using an AlGaN p-i-n vertical conducting diode on n-SiC substrate
Atsushi Nishikawa, Kazubide Kumakura, Toshiki Makimoto
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 46 ( 4B ) 2316 - 2319 2007.04 [Refereed]
Diamond-based RF power transistors: Fundamentals and applications
M. Kasu, K. Ueda, Y. Yamauchi, A. Tallaire, T. Makimoto
DIAMOND AND RELATED MATERIALS 16 ( 4-7 ) 1010 - 1015 2007.04 [Refereed]
Boron nitride thin films grown on graphitized 6H-SiC substrates by metalorganic vapor phase epitaxy
Yasuyuki Kobayashi, Hiroki Hibino, Tomohiro Nakamura, Tetsuya Akasaka, Toshiki Makimoto, Nobuo Matsumoto
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 46 ( 4B ) 2554 - 2557 2007.04 [Refereed]
High-pressure and high-temperature annealing as an activation method for ion-implanted dopants in diamond
K. Ueda, M. Kasu, T. Makimoto
APPLIED PHYSICS LETTERS 90 ( 12 ) 122102 2007.03 [Refereed]
Growth of nonpolar AlN (11(2)over-bar0) and (1(1)over-bar00) films on SiC substrates by flow-rate modulation epitaxy
Tetsuya Akasaka, Yasuyuki Kobayashi, Toshiki Makimoto
APPLIED PHYSICS LETTERS 90 ( 12 ) 121919 2007.03 [Refereed]
Systematic study of insulator deposition effect (Si3N4, SiO2, AlN, and Al2O3) on electrical properties in AlGaN/GaN heterostructures
Narihiko Maeda, Masanobu Hiroki, Noriyuki Watanabe, Yasuhiro Oda, Haruki Yokoyama, Takuma Yagi, Toshiki Makimoto, Takatomo Enoki, Takashi Kobayashi
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 46 ( 2 ) 547 - 554 2007.02 [Refereed]
選択成長マイクロファセットを用いたGaN系面発光型レーザー [招待論文]
赤坂哲也, 牧本俊樹T. Akasaka, T. Makimoto
レーザー研究 Review of Laser Engineering 35 ( 2 ) 79 - 85 2007
深紫外光源のための窒化物半導体の開発
牧本俊樹, 谷保芳孝, 嘉数誠, 小林康之, 赤坂哲也
応用物理 76 ( 5 ) 509 - 512 2007
AIN deep-ultrabiolet light-emitting diodes
Y. Taniyasu, M. Kasu, T. Makimoto
化学と工業 60 ( 8 ) 783 2007
Threading dislocations in heteroepitaxial AlN layer grown by MOVPE on SiC (0001) substrate
Yoshitaka Taniyasu, Makoto Kasu, Toshiki Makimoto
JOURNAL OF CRYSTAL GROWTH 298 310 - 315 2007.01 [Refereed]
Minority carrier diffusion lengths in MOVPE-grown n- and p-InGaN and performance of AlGaN/InGaN/GaN double heterojunction bipolar transistors
K. Kumakura, T. Makimoto, N. Kobayashi, T. Hashizume, T. Fukui, H. Hasegawa
JOURNAL OF CRYSTAL GROWTH 298 787 - 790 2007.01 [Refereed]
Low-resistance graded AlxGa1-xN buffer layers for vertical conducting devices on n-SiC substrates
Atsushi Nishikawa, Kazuhide Kumakura, Tetsuya Akasaka, Toshiki Makimoto
JOURNAL OF CRYSTAL GROWTH 298 819 - 821 2007.01 [Refereed]
Low on-resistance of GaN p-i-n vertical conducting diodes grown on 4H-SiC substrates
Atsushi Nishikawa, Kazuhide Kumakura, Toshiki Makimoto
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4 NO 7 2007 4 ( 7 ) 2662 - + 2007 [Refereed]
Insulator engineering in GaN-based MIS HFETs
Narihiko Maeda, Masanobu Hirokia, Noriyuki Watanabe, Yasuhiro Oda, Haruki Yokoyania, Takuma Yagi, Toshiki Makimoto, Takatoino Enokia, Takashi Kobayashi
GALLIUM NITRIDE MATERIALS AND DEVICES II 6473 647316 2007 [Refereed]
Hexagonal boron nitride on Ni (111) substrate grown by flow-rate modulation epitaxy
Y. Kobayashi, T. Nakamura, T. Akasaka, T. Makimoto, N. Matsumoto
JOURNAL OF CRYSTAL GROWTH 298 325 - 327 2007.01 [Refereed]
Gate capacitance-voltage characteristics of submicron-long-gate diamond field-effect transistors with hydrogen surface termination
M. Kasu, K. Ueda, Y. Yamauchi, T. Makimoto
APPLIED PHYSICS LETTERS 90 ( 4 ) 43509 2007.01 [Refereed]
Evidence of quantum dot-like nano-objects in InGaN quantum wells provided by narrow photoluminescence spectra from localized exciton
H. Gotoh, T. Akasaka, T. Tawara, Y. Kobayashi, T. Makimoto, H. Nakano
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4 NO 7 2007 4 ( 7 ) 2350 - + 2007 [Refereed]
Cathodoluminescence, photoluminescence, and reflectance of an aluminum nitride layer grown on silicon carbide substrate
G. i M. Prinz, A. Ladenburger, M. Schirra, M. Feneberg, K. Thonke, R. Sauer, Y. Taniyasu, M. Kasu, T. Makimoto
JOURNAL OF APPLIED PHYSICS 101 ( 2 ) 23511 2007.01 [Refereed]
BGaN micro-islands as novel buffers for growth of high-quality GaN on sapphire
Tetsuya Akasaka, Yasuyuki Kobayashi, Toshiki Makimoto
JOURNAL OF CRYSTAL GROWTH 298 320 - 324 2007.01 [Refereed]
Analysis of electrical properties of insulators (Si3N4, SiO2, AIN, and Al2O3)/0.5 nm Si3N4/AlGaN/GaN heterostructures
Narihiko Maeda, Masanobu Hiroki, Noriyuki Watanabe, Yasuhiro Oda, Haruki Yokoyama, Takurna Yagi, Toshiki Makimoto, Takatomo Enoki, Takashi Kobayashi
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4 NO 7 2007 4 ( 7 ) 2712 - + 2007 [Refereed]
High-pressure and high-temperature annealing effects on CVD homoepitaxial diamond films
K. Ueda, M. Kasu, A. Tallaire, T. Makimoto
DIAMOND AND RELATED MATERIALS 15 ( 11-12 ) 1789 - 1791 2006.11 [Refereed]
Characterization of high-quality polycrystalline diamond and its high FET performance
K. Ueda, M. Kasu, Y. Yamauchi, T. Makimoto, M. Schwitters, D. J. Twitchen, G. A. Scarsbrook, S. E. Coe
DIAMOND AND RELATED MATERIALS 15 ( 11-12 ) 1954 - 1957 2006.11 [Refereed]
Increased electron mobility in n-type Si-doped AlN by reducing dislocation density
Yoshitaka Taniyasu, Makoto Kasu, Toshiki Makimoto
APPLIED PHYSICS LETTERS 89 ( 18 ) 182112 2006.10 [Refereed]
High breakdown voltage with low on-state resistance of p-InGaN/n-GaN vertical conducting diodes on n-GaN substrates
Atsushi Nishikawa, Kazuhide Kumakura, Toshiki Makimoto
APPLIED PHYSICS LETTERS 89 ( 15 ) 153509 2006.10 [Refereed]
Growth of (Cu,C)Ba2Ca((n-1))CunOy thin films by molecular-beam epitaxy
H. Shibata, S. Karimoto, A. Tsukada, T. Makimoto
PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS 445 862 - 864 2006.10 [Refereed]
Critical electric fields of AlGaN in AlGaN-based vertical conducting diodes on n-SiC substrates
Atsushi Nishikawa, Kazuhide Kumakura, Tetsuya Akasaka, Toshiki Makimoto
SUPERLATTICES AND MICROSTRUCTURES 40 ( 4-6 ) 332 - 337 2006.10 [Refereed]
InGaN quantum wells with small potential fluctuation grown on InGaN underlying layers
Tetsuya Akasaka, Hideki Gotoh, Yasuyuki Kobayashi, Hidetoshi Nakano, Toshiki Makimoto
APPLIED PHYSICS LETTERS 89 ( 10 ) 101110 2006.09 [Refereed]
Diamond FET using high-quality polycrystalline diamond with f(T) of 45 GHz and f(max) of 120 GHz
K. Ueda, M. Kasu, Y. Yamauchi, T. Makimoto, M. Schwitters, D. J. Twitchen, G. A. Scarsbrook, S. E. Coe
IEEE ELECTRON DEVICE LETTERS 27 ( 7 ) 570 - 572 2006.07 [Refereed]
Growth of GaN on sapphire substrates using novel buffer layers of ECR-plasma-sputtered Al2O3/graded-AlON/AlN/Al2O3
Kazuhide Kumakura, Toshiki Makimoto
JOURNAL OF CRYSTAL GROWTH 292 ( 1 ) 155 - 158 2006.06 [Refereed]
RF and DC characteristics in Al2O3/Si3N4 insulated-gate AlGaN/GaN heterostructure field-effect transistors with regrown ohmic structure
N Maeda, T Makimura, T Maruyama, CX Wang, M Hiroki, H Yokoyama, T Makimoto, T Kobayashi, T Enoki
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 203 ( 7 ) 1861 - 1865 2006.05 [Refereed]
An aluminium nitride light-emitting diode with a wavelength of 210 nanometres
Y Taniyasu, M Kasu, T Makimoto
NATURE 441 ( 7091 ) 325 - 328 2006.05 [Refereed]
p-InGaN/n-GaN vertical conducting diodes on n(+)-SiC substrate for high power electronic device applications
A Nishikawa, K Kumakura, T Akasaka, T Makimoto
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 45 ( 4B ) 3387 - 3390 2006.04 [Refereed]
Temperature dependent DC and RF performance of diamond MESFET
H. Ye, M. Kasu, K. Ueda, Y. Yamauchi, N. Maeda, S. Sasaki, T. Makimoto
DIAMOND AND RELATED MATERIALS 15 ( 4-8 ) 787 - 791 2006.04 [Refereed]
RF performance of diamond metel-semiconductor field-effect transistor at elevated temperatures and analysis of its equivalent circuit
Haitao Ye, Makoto Kasu, Kenji Ueda, Yoshiharu Yamauchi, Narihiko Maeda, Satoshi Sasaki, Toshiki Makimoto
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 45 ( 4B ) 3609 - 3613 2006.04 [Refereed]
Influence of lattice constants of GaN and InGaN on npn-type GaN/InGaN heterojunction bipolar transistors
Toshiki Makimoto, Takatoshi Kido, Kazuhide Kumakura, Yoshitaka Taniyasu, Makoto Kasu, Nobuo Matsumoto
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 45 ( 4B ) 3395 - 3397 2006.04 [Refereed]
Influence of impurity of MgO substrates on properties of molecular beam epitaxy-grown superconducting NdBa2CU3O7-delta thin films
S Karimoto, H Sato, T Makimoto
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 45 ( 12-16 ) L419 - L421 2006.04 [Refereed]
High critical electric field of AlxGa1-xN p-i-n vertical conducting diodes on n-SiC substrates
A Nishikawa, K Kumakura, T Akasaka, T Makimoto
APPLIED PHYSICS LETTERS 88 ( 17 ) 173508 2006.04 [Refereed]
High RF output power for H-terminated diamond FETs
M. Kasu, K. Ueda, H. Ye, Y. Yamauchi, S. Sasaki, T. Makimoto
DIAMOND AND RELATED MATERIALS 15 ( 4-8 ) 783 - 786 2006.04 [Refereed]
High RF output power for H-terminated diamond FETs
M. Kasu, K. Ueda, H. Ye, Y. Yamauchi, S. Sasaki, T. Makimoto
DIAMOND AND RELATED MATERIALS 15 ( 4-8 ) 783 - 786 2006.04 [Refereed]
Growth of boron nitride on 6H-SiC substrate by flow-rate modulation epitaxy
Yasuyuki Kobayashi, Toshiki Makimoto
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 45 ( 4B ) 3519 - 3521 2006.04 [Refereed]
Effects of nonradiative centers on localized excitons in InGaN quantum well structures
H. Gotoh, T. Akasaka, T. Tawara, Y. Kobayashi, T. Makimoto, H. Nakano
Applied Physics Letters 89 ( 22 ) 222110 2006
窒化アルミニウムを用いた210nm遠紫外LED
谷保芳孝, 嘉数誠, 牧本俊樹
オプトロニクス ( 11 ) 127 - 130 2006
SiC基板上に作製した窒化物半導体デバイスの現状と将来 [招待論文]
牧本俊樹
光技術コンタクト 44 ( 12 ) 699 - 709 2006
Modifying optical properties of InGaN quantum wells by a large piezoelectric polarization
H. Gotoh, T. Tawara, Y. Kobayashi, N. Kobayashi, Y. Yamauchi, T. Makimoto, T. Saitoh
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6 3 ( 6 ) 1974 - 1977 2006 [Refereed]
Mechanism of superior suppression effect on gate current leakage in ultrathin Al2O3/Si3N4 bilayer-based AlGaN/GaN insulated gate heterostructure field-effect transistors
CX Wang, N Maeda, M Hiroki, H Yokoyama, N Watanabe, T Makimoto, T Enoki, T Kobayashi
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 45 ( 1A ) 40 - 42 2006.01 [Refereed]
Low-Temperature Growth of MgB2 Thin films with Tc above 38 K
K. Ueda, T. Makimoto
Jpn. J. Appl. Phys. 45 ( 7 ) 5738 - 5741 2006
High temperature characteristics of doped channel AlGaN/GaN MIS-HFETs with thin AlGaN barrier layer
C. X. Wang, N. Maeda, M. Hiroki, Y. Yokoyama, T. Makimoto, T. Kobayashi, T. Enoki
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6 3 ( 6 ) 2317 - 2320 2006 [Refereed]
Growth of nitride semiconductors and its application to heterojunction bipolar transistors
T Makimoto, K Kumakura
ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS 89 ( 3 ) 20 - 25 2006 [Refereed]
Growth of nitride semiconductors and its application to heterojunction bipolar transistors
T Makimoto, K Kumakura
ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS 89 ( 3 ) 20 - 25 2006 [Refereed]
Flow-rate modulation epitaxy of wurtzite AlBN
T Akasaka, T Makimoto
APPLIED PHYSICS LETTERS 88 ( 4 ) 041902 2006.01 [Refereed]
Detecting spatially localized excitons in InGaN quantum well structures with a micro-photoluminescence technique
H. Gotoh, T. Akasaka, T. Tawara, Y. Kobayashi, T. Makimoto, H. Nakano
SOLID STATE COMMUNICATIONS 138 ( 12 ) 590 - 593 2006 [Refereed]
Aluminum Nitride Deep-ultraviolet Light-emitting Diodes
Y. Taniyasu, M. Kasu, T. Makimoto
NTT Technical Review 4 ( 12 ) 54 - 58 2006
Current-voltage characteristics of p-InGaN/n-GaN vertical conducting diodes on n(+)-SiC substrates
A Nishikawa, K Kumakura, T Akasaka, T Makimoto
APPLIED PHYSICS LETTERS 87 ( 23 ) 233505 2005.12 [Refereed]
2W/mm output power density at 1 GHz for diamond FETs
M Kasu, K Ueda, H Ye, Y Yamauchi, S Sasaki, T Makimoto
ELECTRONICS LETTERS 41 ( 22 ) 1249 - 1250 2005.10 [Refereed]
High drain current density and reduced gate leakage current in channel-doped AlGaN/GaN heterostructure field-effect transistors with Al2O3/Si3N4 gate insulator
N Maeda, CX Wang, T Enoki, T Makimoto, T Tawara
APPLIED PHYSICS LETTERS 87 ( 7 ) 73504 2005.08 [Refereed]
Silver-assisted growth of NdBa2Cu3O7-delta thin films: An approach for the growth of superior quality ceramic oxide films
J Kurian, H Sato, T Makimoto, M Naito
APPLIED PHYSICS LETTERS 87 ( 2 ) 22501 2005.07 [Refereed]
Blue-purplish InGaN quantum wells with shallow depth of exciton localization
T Akasaka, H Gotoh, H Nakano, T Makimoto
APPLIED PHYSICS LETTERS 86 ( 19 ) 191902 2005.05 [Refereed]
Superior suppression of gate current leakage in Al2O3/Si3N4 bilayer-based AlGaN/GaN insulated gate heterostructure field-effect transistors
CX Wang, N Maeda, M Hiroki, T Tawara, T Makimoto, T Kobayahsi, T Enoki
JOURNAL OF ELECTRONIC MATERIALS 34 ( 4 ) 361 - 364 2005.04 [Refereed]
Strained thick p-InGaN layers for GaN/InGaN heterojunction bipolar transistors on sapphire substrates
T Makimoto, Y Yamauchi, T Kido, K Kumakura, Y Taniyasu, M Kasu, N Matsumoto
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 44 ( 4B ) 2722 - 2725 2005.04 [Refereed]
Comparison of AlGaN/GaN insulated gate heterostructure field-effect transistors with ultrathin Al2O3/Si3N4 bilayer and Si3N4 single layer
CX Wang, N Maeda, M Hiroki, T Tawara, T Makimoto, T Kobayashi, T Enoki
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 44 ( 4B ) 2735 - 2738 2005.04 [Refereed]
All-MgB2 Josephson tunnel junctions
K Ueda, S Saito, K Sernba, T Makimoto, M Naito
APPLIED PHYSICS LETTERS 86 ( 17 ) 172502 2005.04 [Refereed]
Al2O3/Si3N4 insulated gate channel-doped AlGaN/GaN heterostructure field-effect transistors with regrown ohmic structure: Low gate leakage current with high transconductance
N Maeda, T Makimura, CX Wang, M Hiroki, T Makimoto, T Kobayashi, T Enoki
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 44 ( 4B ) 2747 - 2750 2005.04 [Refereed]
新しい窒化物半導体デバイス
牧本俊樹
NTT技術ジャーナル 17 ( 3 ) 58 - 61 2005
ナイトライド系結晶成長技術とヘテロ接合バイポーラトランジスタへの応用 [招待論文]
牧本俊樹, 熊倉
電子情報通信学会 論文誌C J88-C ( 7 ) 467 - 473 2005
Pnp AlGaN/GaN HBTs Operating Under High-Temperature and High-Power
K. Kumakura, T. Makimoto
IEICE Technical Report ED2005-128 47 - 50 2005
Observation of cavity polaritons in InGaN quantum well microcavities
T Tawara, H Gotoh, T Akasaka, N Kobayashi, T Makimoto, T Saitoh
FOURTH INTERNATIONAL CONFERENCE ON PHYSICS OF LIGHT-MATTER COUPLING IN NANOSTRUCTURES (PLMCN4) 2 ( 2 ) 809 - 812 2005 [Refereed]
Minority carrier diffusion length in GaN: Dislocation density and doping concentration dependence
K Kumakura, T Makimoto, N Kobayashi, T Hashizume, T Fukui, H Hasegawa
APPLIED PHYSICS LETTERS 86 ( 5 ) 52105 2005.01 [Refereed]
High-voltage operation with high current gain of pnp AlGaN/GaN heterojunction bipolar transistors with thin n-type GaN base
K Kumakura, T Makimoto
APPLIED PHYSICS LETTERS 86 ( 2 ) 23506 2005.01 [Refereed]
High power operation of Pnp AlGaN/GaN heterojunction bipolar transistors
K Kumakura, Y Yamauchi, T Makimoto
PHYSICA STATUS SOLIDI C - CONFERENCES AND CRITICAL REVIEWS, VOL 2, NO 7 2 ( 7 ) 2589 - 2592 2005 [Refereed]
Efficient observation of narrow isolated photoluminescence spectra from spatially localized excitons in InGaN quantum wells
H Gotoh, T Akasaka, T Tawara, Y Kobayashi, T Makimoto, H Nakano
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 44 ( 42-45 ) L1381 - L1384 2005 [Refereed]
DC and RF characteristics in Al2O3/Si3N4 insulated-gate AlGaN/GaN heterostructure field-effect transistors
N Maeda, T Makimura, T Maruyama, CX Wang, M Hiroki, H Yokoyama, T Makimoto, T Kobayashi, T Enoki
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 44 ( 20-23 ) L646 - L648 2005 [Refereed]
BGaN micro-islands as novel buffers for GaN hetero-epitaxy
T Akasaka, T Makimoto
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 44 ( 50-52 ) L1506 - L1508 2005 [Refereed]
Electrical conduction properties of n-type Si-doped AlN with high electron mobility (> 100 cm(2) V-1 s(-1))
Y Taniyasu, M Kasu, T Makimoto
APPLIED PHYSICS LETTERS 85 ( 20 ) 4672 - 4674 2004.11 [Refereed]
High luminescent efficiency of InGaN multiple quantum wells grown on InGaN underlying layers
T Akasaka, H Gotoh, T Saito, T Makimoto
APPLIED PHYSICS LETTERS 85 ( 15 ) 3089 - 3091 2004.10 [Refereed]
MOVPE growth and photoluminescence of wurtzite InN
T Matsuoka, H Okamoto, H Takahata, T Mitate, S Mizuno, Y Uchiyama, T Makimoto
JOURNAL OF CRYSTAL GROWTH 269 ( 1 ) 139 - 144 2004.08 [Refereed]
Properties of (111) diamond homoepitaxial layer and its application to field-effect transistor
M Kasu, M Kubovic, A Aleksov, N Teofilov, R Sauer, E Kohn, T Makimoto
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 43 ( 7B ) L975 - L977 2004.07 [Refereed]
Magnetic and electric field effects of photoluminescence of excitons bound to nitrogen atom pairs in GaAs
K Onomitsu, T Okabe, T Makimoto, H Saito, M Ramsteiner, HJ Zhu, A Kawaharazuka, K Ploog, Y Horikoshi
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 43 ( 6B ) L756 - L758 2004.06 [Refereed]
Electron transport properties in lightly Si-doped InGaN films grown by metalorganic vapor phase epitaxy
CX Wang, N Maeda, K Tsubaki, N Kobayashi, T Makimoto
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 43 ( 6A ) 3356 - 3359 2004.06 [Refereed]
Al2O3 insulated-gate structure for AlGaN/GaN heterostructure field effect transistors having thin AlGaN barrier layers
T Hashizume, S Anantathanasarn, N Negoro, E Sano, H Hasegawa, K Kumakura, T Makimoto
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 43 ( 6B ) L777 - L779 2004.06 [Refereed]
An InGaN-based horizontal-cavity surface-emitting laser diode
T Akasaka, T Nishida, T Makimoto, N Kobayashi
APPLIED PHYSICS LETTERS 84 ( 20 ) 4104 - 4106 2004.05 [Refereed]
Fabrication of GaN/Alumina/GaN structure to reduce dislocations in GaN
M Hiroki, K Kumakura, T Makimoto, N Kobayashi, T Kobayashi
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 43 ( 4B ) 1930 - 1933 2004.04 [Refereed]
Extrinsic base regrowth of p-InGaN for Npn-type GaN/InGaN heterojunction bipolar transistors
T Makimoto, K Kumakura, N Kobayashi
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 43 ( 4B ) 1922 - 1924 2004.04 [Refereed]
High-power characteristics of GaN/InGaN double heterojunction bipolar transistors
T Makimoto, Y Yamauchi, K Kumakura
APPLIED PHYSICS LETTERS 84 ( 11 ) 1964 - 1966 2004.03 [Refereed]
Field emission properties of heavily Si-doped AlN in triode-type display structure
Y Taniyasu, M Kasu, T Makimoto
APPLIED PHYSICS LETTERS 84 ( 12 ) 2115 - 2117 2004.03 [Refereed]
Electron transport properties in AlGaN/InGaN/GaN double heterostructures grown by metalorganic vapor phase epitaxy
CX Wang, K Tsubaki, N Kobayashi, T Makimoto, N Maeda
APPLIED PHYSICS LETTERS 84 ( 13 ) 2313 - 2315 2004.03 [Refereed]
Influence of epitaxy on the surface conduction of diamond film
M Kasu, M Kubovic, A Aleksov, N Teofilov, Y Taniyasu, R Sauer, E Kohn, T Makimoto, N Kobayashi
DIAMOND AND RELATED MATERIALS 13 ( 2 ) 226 - 232 2004.02 [Refereed]
AlGaN-based ultraviolet light-emitting diodes grown on bulk AlN substrates
T Nishida, T Makimoto, H Saito, T Ban
APPLIED PHYSICS LETTERS 84 ( 6 ) 1002 - 1003 2004.02 [Refereed]
Al2O3 insulated-gate structure for current control in AlGaN/GaN HEFTs having thin AlGaN barrier layers
T. Hashizume, S. Anantathanasarn, N. Negoro E, Sano H, Hasegawa K. Kumakura, T. Makimoto
Jpn. J. Appl. Phys. 43 ( 6B ) L777 - L779 2004
Novel Nitride Semiconductor Devices
T. Makimoto
NTT Technical Review 2 ( 6 ) 12 - 18 2004
High power extraction of 340-350 nm UV-LEDs
T Nishida, T Ban, H Saito, N Kobayashi, T Makimoto
QUANTUM SENSING AND NANOPHOTONIC DEVICES 5359 387 - 399 2004 [Refereed]
Triode-type basic display structure using Si-doped AlN field emitters
Y Taniyasu, M Kasu, T Makimoto, N Kobayashi
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 200 ( 1 ) 199 - 201 2003.11 [Refereed]
Reduction of threading dislocations in crack-free AlGaN by using multiple thin SixAl1-xN interlayers
T Akasaka, T Nishida, Y Taniyasu, M Kasu, T Makimoto, N Kobayashi
APPLIED PHYSICS LETTERS 83 ( 20 ) 4140 - 4142 2003.11 [Refereed]
High electron concentrations in Si-doped AlN/AlGaN superlattices with high average Al content of 80%
Y Taniyasu, M Kasu, K Kumakura, T Makimoto, N Kobayashi
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 200 ( 1 ) 40 - 43 2003.11 [Refereed]
Formation of stacking faults containing microtwins in (111) chemical-vapor-deposited diamond homoepitaxial layers
M Kasu, T Makimoto, W Ebert, E Kohn
APPLIED PHYSICS LETTERS 83 ( 17 ) 3465 - 3467 2003.10 [Refereed]
High current gain (> 2000) of GaN/InGaN double heterojunction bipolar transistors using base regrowth of p-InGaN
T Makimoto, K Kumakura, N Kobayashi
APPLIED PHYSICS LETTERS 83 ( 5 ) 1035 - 1037 2003.08 [Refereed]
Ohmic contact to p-GaN using a strained InGaN contact layer and its thermal stability
K Kumakura, T Makimoto, N Kobayashi
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 42 ( 4B ) 2254 - 2256 2003.04 [Refereed]
Mg-acceptor activation mechanism and transport characteristics in p-type InGaN grown by metalorganic vapor phase epitaxy
K Kumakura, T Makimoto, N Kobayashi
JOURNAL OF APPLIED PHYSICS 93 ( 6 ) 3370 - 3375 2003.03 [Refereed]
Field-emission-display basic structure using Si-doped AlN
Y Taniyasu, M Kasu, T Makimoto, N Kobayashi
TECHNICAL DIGEST OF THE 16TH INTERNATIONAL VACUUM MICROELECTRONICS CONFERENCE 249 - 250 2003 [Refereed]
Schottky barrier heights of Au, Pd and Ni on n-GaN evaluated using mesa-structure diodes
T Makimoto, M Kashiwa, T Kido, N Matsumoto, K Kumakura, N Kobayashi
5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS 0 ( 7 ) 2393 - 2395 2003 [Refereed]
High breakdown electric field for Npn-type AlGaN/InGaN/GaN heterojunction bipolar transistors
T Makimoto, K Kumakura, N Kobayashi
COMPOUND SEMICONDUCTORS 2002 174 ( 4 ) 231 - 234 2003 [Refereed]
High-power characteristics of GaN/InGaN double heterojunction bipolar transistors with a regrown p-InGaN base layer
T Makimoto, Y Yamauchi, K Kumakura
GAN AND RELATED ALLOYS - 2003 798 73 - 78 2003 [Refereed]
High current injection to a UV-LED grown on a bulk AIN substrate
T Nishida, T Ban, H Saito, T Makimoto
GAN AND RELATED ALLOYS - 2003 798 3 - 9 2003 [Refereed]
Pnp AlGaN/GaN heterojunction bipolar transistors operating at 300 degrees C
K Kumakura, T Makimoto, N Kobayashi
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 194 ( 2 ) 443 - 446 2002.12 [Refereed]
Field effect of photoluminescence from excitons bound to nitrogen atom pairs in GaAs
K Onomitsu, A Kawaharazuka, T Okabe, T Makimoto, H Saito, Y Horikoshi
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 41 ( 9 ) 5503 - 5506 2002.09 [Refereed]
Common-emitter current-voltage characteristics of a Pnp AlGaN/GaN heterojunction bipolar transistor with a low-resistance base layer
K Kumakura, T Makimoto, N Kobayashi
APPLIED PHYSICS LETTERS 80 ( 20 ) 3841 - 3843 2002.05 [Refereed]
Valence-band discontinuities between InGaN and GaN evaluated by capacitance-voltage characteristics of p-InGaN/n-GaN diodes
T Makimoto, K Kumakura, T Nishida, N Kobayashi
JOURNAL OF ELECTRONIC MATERIALS 31 ( 4 ) 313 - 315 2002.04 [Refereed]
Common-emitter current-voltage characteristics of a pnp GaN bipolar junction transistor
K Kumakura, T Makimoto, N Kobayashi
APPLIED PHYSICS LETTERS 80 ( 7 ) 1225 - 1227 2002.02 [Refereed]
Polarization charge densities at p-GaN/n-AlGaN heterojunctions evaluated by capacitance-voltage characteristics
T Makimoto, K Kumakura, N Kobayashi
INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS 0 ( 1 ) 334 - 337 2002 [Refereed]
Npn InGaN/GaN double heterojunction bipolar transistors with high common-emitter current gains
T Makimoto, K Kumakura, N Kobayashi
COMPOUND SEMICONDUCTORS 2001 170 ( 170 ) 33 - 38 2002 [Refereed]
N-AlGaN/p-InGaN/n-GaN heterojunction bipolar transistors for high power operation
T Makimoto, K Kumakura, N Kosayasihi
INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS 0 ( 1 ) 95 - 98 2002 [Refereed]
Modulation of PL recombination processes in N doped GaAs/Al0.33Ga0.67As SQW by electric field
K Onomitsu, A Kawaharazuka, T Okabe, T Makimoto, H Saito, Y Horikoshi
COMPOUND SEMICONDUCTORS 2001 170 ( 170 ) 407 - 411 2002 [Refereed]
High common-emitter current gains obtained by pnp GaN bipolar junction transistors
K Kumakura, T Makimoto, N Kobayashi
GAN AND RELATED ALLOYS-2001 693 793 - 798 2002 [Refereed]
Group-III nitride heterojunction bipolar transistors (Invited)
T. Makimoto, K. Kumakura, N. Kobayashi
Proceeding of 21st Electronic Materials Symposium (EMS-21) K5 2002
Formation of low-resistance Ohmic contact to p-GaN using strained InGaN contact layer (In Japanese)
K. Kumakura, T. Makimoto, N. Kobayashi
Technical Report of IEICE 102 ( 118 ) ED 2002
Low resistance non-alloy ohmic contact to p-type GaN using Mg-doped InGaN contact layer
K Kumakura, T Makimoto, N Kobayashi
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 188 ( 1 ) 363 - 366 2001.11 [Refereed]
High current gains obtained by InGaN/GaN double heterojunction bipolar transistors
T Makimoto, K Kumakura, N Kobayashi
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 188 ( 1 ) 183 - 186 2001.11 [Refereed]
Low-resistance nonalloyed ohmic contact to p-type GaN using strained InGaN contact layer
K Kumakura, T Makimoto, N Kobayashi
APPLIED PHYSICS LETTERS 79 ( 16 ) 2588 - 2590 2001.10 [Refereed]
High current gains obtained by InGaN/GaN double heterojunction bipolar transistors with p-InGaN base
T Makimoto, K Kumakura, N Kobayashi
APPLIED PHYSICS LETTERS 79 ( 3 ) 380 - 381 2001.07 [Refereed]
Heavily p-type doping into group-III nitrides and their application to heterojunction bipolar transistors
T. Makimoto, K. Kumakura
NTT R&D 50 ( 1 ) 301 - 309 2001
GaN系半導体を用いた光・電子デバイス
小林直樹, 熊倉一英, 西田敏夫, 前田就彦, 牧本俊樹, 嘉数誠
応用物理 70 ( 5 ) 513 - 522 2001
p-InGaN/N-GaN Heterojunction Diodes and Their Application to Heterojunction Bipolar Transistors
T. Makimoto, K. Kumakura, T. Nishida, N. Kobayashi
MRS Proceedings 639 G.13.10.1 - G.13.10.11 2001
Reduced damage of electron cyclotron resonance etching by In doping into p-GaN
T Makimoto, K Kumakura, N Kobayashi
JOURNAL OF CRYSTAL GROWTH 221 350 - 355 2000.12 [Refereed]
High hole concentrations in Mg-doped InGaN grown by MOVPE
K Kumakura, T Makimoto, N Kobayashi
JOURNAL OF CRYSTAL GROWTH 221 267 - 270 2000.12 [Refereed]
Enhanced hole generation in Mg-doped AlGaN/GaN superlattices due to piezoelectric field
K Kumakura, T Makimoto, N Kobayashi
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 39 ( 4B ) 2428 - 2430 2000.04 [Refereed]
Activation energy and electrical activity of Mg in Mg-doped InxGa1-xN (x < 0.2)
K Kumakura, T Makimoto, N Kobayashi
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS 39 ( 4B ) L337 - L339 2000.04 [Refereed]
Efficient hole generation above 10(19) cm(-3) in Mg-doped InGaN/GaN superlattices at room temperature
K Kumakura, T Makimoto, N Kobayashi
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS 39 ( 3AB ) L195 - L196 2000.03 [Refereed]
Short period alloy superlattice for transparent conductive layer of UV-emitter
T Nishida, H Saito, K Kumakura, T Makimoto, N Kobayashi
PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS 1 872 - 874 2000 [Refereed]
Selectively enhanced Mg incorporation into AlGaN barrier layer of strained layer superlattice
T Nishida, H Saito, K Kumakura, T Makimoto, N Kobayashi
PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS 1 725 - 727 2000 [Refereed]
Low p-type contact resistance using Mg-doped InGaN and InGaN/GaN superlattices
K Kumakura, T Makimoto, N Kobayashi
PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS 1 797 - 800 2000 [Refereed]
InGaN/GaN double heterojunction bipolar transistor grown by metalorganic vapor phase epitaxy
T Makimoto, K Kumakura, N Kobayashi
PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS 1 969 - 972 2000 [Refereed]
High room-temperature hole concentrations above 1019 cm-3 in Mg-doped InGaN/GaN superlattices
K. Kumakura, T. Makimoto, N. Kobayashi
MRS Proceedings 622 T.5.11.1 - T.5.11.6 2000
MOVPE growth of strained InGaAsN/GaAs quantum wells
H Saito, T Makimoto, N Kobayashi
JOURNAL OF CRYSTAL GROWTH 195 ( 1-4 ) 416 - 420 1998.12 [Refereed]
Selectivity mechanism of all ultra high vacuum scanning tunneling microscopy based selective area growth
M Kasu, T Makimoto, N Kobayashi
APPLIED SURFACE SCIENCE 130 452 - 456 1998.06 [Refereed]
Nanoscale patterning and selective growth of GaAs surfaces by ultra-high vacuum scanning tunneling microscopy
M Kasu, T Makimoto, N Kobayashi
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 36 ( 6B ) 3821 - 3826 1997.06 [Refereed]
Excitonic luminescence and absorption in dilute GaAs1-xNx alloy (x<0.3%)
T Makimoto, H Saito, T Nishida, N Kobayashi
APPLIED PHYSICS LETTERS 70 ( 22 ) 2984 - 2986 1997.06 [Refereed]
Nanometer-scale selective-area GaAs growth on nitrogen-passivated surfaces using STM and MOMBE
M Kasu, T Makimoto, N Kobayashi
JOURNAL OF CRYSTAL GROWTH 173 ( 3-4 ) 589 - 591 1997.04 [Refereed]
Selective-area GaAs growth using nitrogen passivation and scanning-tunneling-microscopy modification on a nanometer scale
M Kasu, T Makimoto, N Kobayashi
APPLIED PHYSICS LETTERS 70 ( 9 ) 1161 - 1163 1997.03 [Refereed]
Origin of nitrogen-pair luminescence in GaAs studied by nitrogen atomic-layer-doping in MOVPE
T Makimoto, H Saito, N Kobayashi
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 36 ( 3B ) 1694 - 1697 1997.03 [Refereed]
In-situ STM observation of GaAs surfaces after nitridation
T Makimoto, M Kasu, JL Benchimol, N Kobayashi
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 36 ( 3B ) 1733 - 1735 1997.03 [Refereed]
Formation and etching of thin nitride layers on GaAs using atomic nitrogen and hydrogen
T Makimoto, N Kobayashi
SOLID-STATE ELECTRONICS 41 ( 2 ) 345 - 347 1997.02 [Refereed]
Photoluminescence characteristics of nitrogen atomic-layer-doped GaAs grown by MOVPE
H Saito, T Makimoto, N Kobayashi
JOURNAL OF CRYSTAL GROWTH 170 ( 1-4 ) 372 - 376 1997.01 [Refereed]
Nitrogen atomic-layer-doping on Ga-terminated and misoriented GaAs surfaces by metalorganic vapor phase epitaxy using dimethylhydrazine
H Saito, T Makimoto, N Kobayashi
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 35 ( 12B ) L1644 - L1647 1996.12 [Refereed]
Extremely strong and sharp photoluminescence lines from nitrogen atomic-layer-doped GaAs, AlGaAs and AlGaAS/GaAs single quantum wells
T Makimoto, N Kobayashi
JOURNAL OF ELECTRONIC MATERIALS 25 ( 9 ) 1527 - 1530 1996.09 [Refereed]
Nitridation of GaAs surfaces using nitrogen molecules cracked by a hot tungsten filament
T Makimoto, N Kobayashi
APPLIED SURFACE SCIENCE 100 403 - 406 1996.07 [Refereed]
Scanning-tunneling-microscopy modification of nitrogen-passivated GaAs(001) surfaces on a nanometer scale
M Kasu, T Makimoto, N Kobayashi
APPLIED PHYSICS LETTERS 68 ( 13 ) 1811 - 1813 1996.03 [Refereed]
Extremely sharp photoluminescence lines from nitrogen atomic-layer-doped AlGaAs/GaAs single quantum wells
T Makimoto, N Kobayashi
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 35 ( 2B ) 1299 - 1301 1996.02 [Refereed]
Anisotropic surface morphology of GaAs (001) surfaces passivated with nitrogen radicals
M Kasu, T Makimoto, N Kobayashi
APPLIED PHYSICS LETTERS 68 ( 7 ) 955 - 957 1996.02 [Refereed]
Nitrogen Atomic-layer-doping on Ga-terminated and Misoriented GaAs Surfaces by MOVPE Using Dimethylhydrazine
H. Saito, T. Makimoto, N. Kobayashi
Jpn. J. Appl. Phys. 35 1644 - 1647 1996
SHARP PHOTOLUMINESCENCE LINES FROM NITROGEN ATOMIC-LAYER-DOPED GAAS
T MAKIMOTO, N KOBAYASHI
APPLIED PHYSICS LETTERS 67 ( 5 ) 688 - 690 1995.07 [Refereed]
NITRIDATION OF GAAS-SURFACES USING NITROGEN THROUGH A HOT TUNGSTEN FILAMENT
T MAKIMOTO, N KOBAYASHI
APPLIED PHYSICS LETTERS 67 ( 4 ) 548 - 550 1995.07 [Refereed]
HOLE ACCUMULATION IN (IN)GASB/ALSB QUANTUM-WELLS INDUCED BY THE FERMI-LEVEL PINNING OF AN INAS SURFACE
T MAKIMOTO, B BRAR, H KROEMER
JOURNAL OF CRYSTAL GROWTH 150 ( 1-4 ) 883 - 886 1995.05 [Refereed]
CARBON INCORPORATION MECHANISM IN ATOMIC LAYER EPITAXY OF GAAS AND ALGAAS
N KOBAYASHI, T MAKIMOTO
APPLIED SURFACE SCIENCE 82-3 284 - 289 1994.12 [Refereed]
CARBON ATOMIC LAYER DOPING IN ALGAAS BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION AND ITS APPLICATION TO A P-TYPE MODULATION-DOPED STRUCTURE
T MAKIMOTO, N KOBAYASHI
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 32 ( 9B ) L1300 - L1303 1993.09 [Refereed]
HIGH-FREQUENCY INP/INGAAS DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS ON A SI SUBSTRATE
Y MATSUOKA, K KURISHIMA, T MAKIMOTO
IEEE ELECTRON DEVICE LETTERS 14 ( 7 ) 357 - 359 1993.07 [Refereed]
HIGH 2-DIMENSIONAL ELECTRON-MOBILITY IN SI ATOMIC-LAYER DOPED N-ALGAAS GAAS GROWN BY METALORGANIC CHEMICAL-VAPOR DEPOSITION
T MAKIMOTO, N KOBAYASHI
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 32 ( 5A ) L648 - L649 1993.05 [Refereed]
CARBON MODULATION-DOPED P-ALGAAS/GAAS HETEROSTRUCTURES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
T MAKIMOTO, SS CHANG
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 31 ( 6B ) L797 - L798 1992.06 [Refereed]
SUBBAND STRUCTURE OF 2-DIMENSIONAL ELECTRONS AT DOUBLE SILICON-DOPED ATOMIC LAYERS IN GAAS
G KIDO, S YAMADA, T MAKIMOTO
PHYSICA B-CONDENSED MATTER 177 ( 1-4 ) 433 - 436 1992.03 [Refereed]
INP/INGAAS DOUBLE HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN ON SI
T MAKIMOTO, K KURISHIMA, T KOBAYASHI, T ISHIBASHI
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 30 ( 12B ) 3815 - 3817 1991.12 [Refereed]
INP/INGAAS DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN ON (100) SI BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
T MAKIMOTO, K KURISHIMA, T KOBAYASHI, T ISHIBASHI
IEEE ELECTRON DEVICE LETTERS 12 ( 7 ) 369 - 371 1991.07 [Refereed]
CARBON DOPING IN ALGAAS FOR ALGAAS/GAAS GRADED-BASE HETEROJUNCTION BIPOLAR-TRANSISTOR BY FLOW-RATE MODULATION EPITAXY
H ITO, T MAKIMOTO
APPLIED PHYSICS LETTERS 58 ( 24 ) 2770 - 2772 1991.06 [Refereed]
INP/INGAAS HETEROSTRUCTURE BIPOLAR-TRANSISTORS GROWN AT LOW-TEMPERATURE BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
K KURISHIMA, T MAKIMOTO, T KOBAYASHI, T ISHIBASHI
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 30 ( 2B ) L258 - L261 1991.02 [Refereed]
INSITU MONITORING OF GAAS GROWTH-PROCESS IN MOVPE BY SURFACE PHOTOABSORPTION METHOD
N KOBAYASHI, T MAKIMOTO, Y YAMAUCHI, Y HORIKOSHI
JOURNAL OF CRYSTAL GROWTH 107 ( 1-4 ) 62 - 67 1991.01 [Refereed]
InP/InGaAs heterojunction bipolar transistors grown at low temperature by metalorganic chemical vapor transistors
K. Kurishima T, T. Makimoto, T. Kobayashi, T. Ishibashi
Jpn. J. Appl. Phys. 30 L258 - L261 1991
P+-N+ GAAS TUNNEL JUNCTION DIODES GROWN BY FLOW-RATE MODULATION EPITAXY
T MAKIMOTO, Y HORIKOSHI
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 29 ( 12 ) L2250 - L2253 1990.12 [Refereed]
SUBBAND MOBILITY OF QUASI-2-DIMENSIONAL ELECTRONS IN SI ATOMIC LAYER DOPED GAAS
S YAMADA, T MAKIMOTO
APPLIED PHYSICS LETTERS 57 ( 10 ) 1022 - 1024 1990.09 [Refereed]
DECOMPOSITION OF ARSINE AND TRIMETHYLARSENIC ON GAAS INVESTIGATED BY SURFACE PHOTOABSORPTION
Y YAMAUCHI, T MAKIMOTO, N KOBAYASHI, Y HORIKOSHI
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 29 ( 8 ) L1353 - L1356 1990.08 [Refereed]
INVESTIGATION OF THE DECOMPOSITION PROCESS OF GA ORGANOMETALS IN MOCVD BY THE SURFACE PHOTO-ABSORPTION METHOD
T MAKIMOTO, Y YAMAUCHI, N KOBAYASHI, Y HORIKOSHI
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 29 ( 4 ) L645 - L648 1990.04 [Refereed]
INSITU OPTICAL MONITORING OF THE GAAS GROWTH-PROCESS IN MOCVD
T MAKIMOTO, Y YAMAUCHI, N KOBAYASHI, Y HORIKOSHI
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 29 ( 2 ) L207 - L209 1990.02 [Refereed]
EFFECTIVE MASSES OF QUASI-2-DIMENSIONAL ELECTRON-GAS IN SI-ATOMIC LAYER DOPED GAAS
S YAMADA, T MAKIMOTO
INSTITUTE OF PHYSICS CONFERENCE SERIES ( 106 ) 429 - 434 1990 [Refereed]
INVESTIGATION OF GROWTH-PROCESSES IN FLOW-RATE MODULATION EPITAXY AND ATOMIC LAYER EPITAXY BY NEW INSITU OPTICAL MONITORING METHOD
N KOBAYASHI, T MAKIMOTO, Y YAMAUCHI, Y HORIKOSHI
ACTA POLYTECHNICA SCANDINAVICA-CHEMICAL TECHNOLOGY SERIES 195 ( 195 ) 139 - 145 1990 [Refereed]
EFFECTIVE MASSES OF QUASI-2-DIMENSIONAL ELECTRON-GAS IN SI-ATOMIC LAYER DOPED GAAS
S YAMADA, T MAKIMOTO
GALLIUM ARSENIDE AND RELATED COMPOUNDS 1989 106 429 - 434 1990 [Refereed]
ANNEALING PROPERTIES OF SI-ATOMIC-LAYER-DOPED GAAS
Y YAMAUCHI, T MAKIMOTO, Y HORIKOSHI
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 28 ( 10 ) L1689 - L1692 1989.10 [Refereed]
FLOW-RATE MODULATION EPITAXY OF GAAS AND ALGAAS
N KOBAYASHI, T MAKIMOTO, Y YAMAUCHI, Y HORIKOSHI
JOURNAL OF APPLIED PHYSICS 66 ( 2 ) 640 - 651 1989.07 [Refereed]
OPTIMAL-GROWTH CONDITIONS OF ALGAAS/GAAS QUANTUM WELLS BY FLOW-RATE MODULATION EPITAXY
Y YAMAUCHI, T MAKIMOTO, Y HORIKOSHI
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 28 ( 2 ) L155 - L158 1989.02 [Refereed]
ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH HEAVILY C-DOPED BASE LAYERS GROWN BY FLOW-RATE MODULATION EPITAXY
T MAKIMOTO, N KOBAYASHI, H ITO, T ISHIBASHI
APPLIED PHYSICS LETTERS 54 ( 1 ) 39 - 41 1989.01 [Refereed]
ELECTRON CONDUCTION IN AN ATOMIC-LAYER-DOPED GAAS PLANE
T MAKIMOTO, N KOBAYASHI, Y HORIKOSHI
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 27 ( 5 ) L770 - L772 1988.05 [Refereed]
ELECTRON CONDUCTION IN GAAS ATOMIC LAYER DOPED WITH SI
T MAKIMOTO, N KOBAYASHI, Y HORIKOSHI
JOURNAL OF APPLIED PHYSICS 63 ( 10 ) 5023 - 5026 1988.05 [Refereed]
REDUCTION OF DEEP LEVEL CONCENTRATIONS IN GAAS-LAYERS GROWN BY FLOW-RATE MODULATION EPITAXY
T MAKIMOTO, Y YAMAUCHI, Y HORIKOSHI
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 27 ( 2 ) L152 - L154 1988.02 [Refereed]
ANALYSIS OF (ALAS) (GAAS) MONOLAYER SUPERLATTICES GROWN BY FLOW-RATE MODULATION EPITAXY
L TAPFER, N KOBAYASHI, T MAKIMOTO, Y HORIKOSHI
JOURNAL DE PHYSIQUE 48 ( C-5 ) 521 - 524 1987.11 [Refereed]
ABRUPT P-TYPE DOPING PROFILE OF CARBON ATOMIC LAYER DOPED GAAS GROWN BY FLOW-RATE MODULATION EPITAXY
N KOBAYASHI, T MAKIMOTO, Y HORIKOSHI
APPLIED PHYSICS LETTERS 50 ( 20 ) 1435 - 1437 1987.05 [Refereed]
EFFICIENT SI PLANAR DOPING IN GAAS BY FLOW-RATE MODULATION EPITAXY
N KOBAYASHI, T MAKIMOTO, Y HORIKOSHI
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 25 ( 9 ) L746 - L748 1986.09 [Refereed]
MODULATION DOPED N-ALGAAS/GAAS HETEROSTRUCTURES GROWN BY FLOW-RATE MODULATION EPITAXY
T MAKIMOTO, N KOBAYASHI, Y HORIKOSHI
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 25 ( 6 ) L513 - L515 1986.06 [Refereed]
Flow-rate modulation epitaxy of GaAs
N. Kobayashi, T. Makimoto, Y. Horikoshi
Proceedings of the Twelfth International Symposium on Gallium Arsenide and Related Compounds 737 - 738 1986
FLOW-RATE MODULATION EPITAXY OF GAAS
N KOBAYASHI, T MAKIMOTO, Y HORIKOSHI
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 24 ( 12 ) L962 - L964 1985.12 [Refereed]
REDUCED CARBON CONTAMINATION IN OMVPE GROWN GAAS AND ALGAAS
N KOBAYASHI, T MAKIMOTO
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 24 ( 10 ) L824 - L826 1985 [Refereed]
窒化物半導体層の成長方法
牧本 俊樹
Patent
ヘテロ構造およびその製造方法
牧本 俊樹
Patent
窒化物半導体結晶成長方法
牧本 俊樹, 前田 理也, 堀越 佳治
Patent
窒化物半導体の成長方法
牧本 俊樹, 堀越 佳治, 前田 理也, 小林 祐輝
Patent
平成27年度文部科学大臣表彰受賞(科学技術賞研究部門)
2015.04
応用物理学会フェロー表彰
2014.09
高品質GaAsN系超格子の成長と励起子に関する研究
Project Year :
Growth of BN on graphene by RF-MBE
Project Year :
Research on hexagonal boron nitride semiconductors
AlONバッファー層を用いた高品質窒化物半導体ヘテロ構造のMBE成長
2014 熊倉一英, 山本秀樹
Seminar on Semiconductor Engineering D
Graduate School of Advanced Science and Engineering
2022 fall semester
Seminar on Semiconductor Engineering C
Graduate School of Advanced Science and Engineering
2022 spring semester
Seminar on Semiconductor Engineering B
Graduate School of Advanced Science and Engineering
2022 fall semester
Seminar on Semiconductor Engineering A
Graduate School of Advanced Science and Engineering
2022 spring semester
Advanced Semiconductor Engineering
Graduate School of Advanced Science and Engineering
2022 fall semester
Research on Semiconductor Engineering
Graduate School of Advanced Science and Engineering
2022 full year
Master's Thesis (Department of Electrical Engineering and Bioscience)
Graduate School of Advanced Science and Engineering
2022 full year
Master's Thesis (Department of Electrical Engineering and Bioscience)
Graduate School of Advanced Science and Engineering
2022 full year
Seminar on Semiconductor Engineering D
Graduate School of Advanced Science and Engineering
2022 fall semester
Seminar on Semiconductor Engineering C
Graduate School of Advanced Science and Engineering
2022 spring semester
Seminar on Semiconductor Engineering B
Graduate School of Advanced Science and Engineering
2022 fall semester
Seminar on Semiconductor Engineering A
Graduate School of Advanced Science and Engineering
2022 spring semester
Research on Semiconductor Engineering
Graduate School of Advanced Science and Engineering
2022 full year
Research on Semiconductor Engineering
Graduate School of Advanced Science and Engineering
2022 full year
Laboratory C on Electrical Engineering and Bioscience
School of Advanced Science and Engineering
2022 fall semester
Frontiers of Electrical Engineering and Bioscience [S Grade]
School of Advanced Science and Engineering
2022 spring semester
Frontiers of Electrical Engineering and Bioscience
School of Advanced Science and Engineering
2022 spring semester
Graduation Thesis B [Spring] [S Grade]
School of Advanced Science and Engineering
2022 spring semester
Laboratory C on Electrical Engineering and Bioscience [S Grade]
School of Advanced Science and Engineering
2022 fall semester