Concurrent Post
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Faculty of Science and Engineering Graduate School of Advanced Science and Engineering
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Faculty of Science and Engineering Graduate School of Fundamental Science and Engineering
Details of a Researcher
Updated on 2022/05/17
Faculty of Science and Engineering Graduate School of Advanced Science and Engineering
Faculty of Science and Engineering Graduate School of Fundamental Science and Engineering
理工学術院総合研究所 兼任研究員
Waseda University Graduate School of Science and Engineering
Waseda University Graduate School, Division of Engineering
Waseda University School of Science and Engieering
Waseda University Doctor of Engineering
Waseda University Faculty of Science and Engineering Professor
Waseda University Faculty of Science and Engineering Associate Professor
Waseda University Faculty of Science and Engineering Associate Professor
Japan Science and Technology Agency PRESTO Researcher
Waseda University Graduate School of Science and Engineering Lecturer
Japan Society for The Promotion of Science Research Fellow (PD)
Japan Society for The Promotion of Science Research Fellow (PD)
Japan Society for The Promotion of Science Research Fellow (DC1)
The Institute of Electrical and Electronics Engineers (IEEE)
日本物理学会
日本表面科学会
応用物理学会
Nanometer-scale chemistry
Mathematical physics and fundamental theory of condensed matter physics
Electric and electronic materials
Electronic materials, Computational Physics, Nanotechnology
Large-scale molecular simulation
Nanotechnology / Materials
Dependency of a localized phonon mode intensity on compositional cluster size in SiGe alloys
Sylvia Yuk Yee Chung, Motohiro Tomita, Junya Takizawa, Ryo Yokogawa, Atsushi Ogura, Haidong Wang, Takanobu Watanabe
AIP Advances 11 ( 7 ) 075017 - 075017 2021.07 [Refereed]
Authorship:Last author
Designing a bileg silicon-nanowire thermoelectric generator with cavity-free structure
Md Mehdee Hasan Mahfuz, Motohiro Tomita, Shuhei Hirao, Kazuaki Katayama, Kaito Oda, Takashi Matsukawa, Takeo Matsuki, Takanobu Watanabe
Japanese Journal of Applied Physics 60 ( SB ) SBBF07 - SBBF07 2021.05 [Refereed]
Authorship:Last author
Ryohei Yamaguchi, Taiki Ishii, Masamichi Matsumoto, Angana Borah, Naoki Tanaka, Kaito Oda, Motohiro Tomita, Takanobu Watanabe, Tsuyohiko Fujigaya
Journal of Materials Chemistry A 9 ( 20 ) 12188 - 12195 2021 [Refereed]
Control of anisotropic conduction of carbon nanotube sheets and their use as planar-type thermoelectric conversion materials
Masamichi Matsumoto, Ryohei Yamaguchi, Keisuke Shima, Masakazu Mukaida, Motohiro Tomita, Takanobu Watanabe, Takao Ishida, Tsuyohiko Fujigaya
Science and Technology of Advanced Materials 22 ( 1 ) 272 - 279 2021 [Refereed]
Fabrication of high-quality GaAs/diamond heterointerface for thermal management applications
Jianbo Liang, Yuji Nakamura, Tianzhuo Zhan, Yutaka Ohno, Yasuo Shimizu, Kazu Katayama, Takanobu Watanabe, Hideto Yoshida, Yasuyoshi Nagai, Hongxing Wang, Makoto Kasu, Naoteru Shigekawa
Diamond and Related Materials 111 108207 - 108207 2021.01 [Refereed]
Direct Bonding of GaAs and Diamond for High Power Device Applications
Jianbo Liang, Yuji Nakamura, Yutaka Ohno, Yasuo Shimizu, Tianzhuo Zhan, Takanobu Watanabe, Naoto Kamiuchi, Yasuyoshi Nagai, Naoteru Shigekawa
ECS Meeting Abstracts MA2020-02 ( 22 ) 1634 - 1634 2020.11 [Refereed]
Katsuki Abe, Kaito Oda, Motohiro Tomita, Takeo Matsuki, Takashi Matsukawa, Takanobu Watanabe
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) 2020.09
Sylvia Yuk Yee Chung, Motohiro Tomita, Ryo Yokogawa, Atsushi Ogura, Takanobu Watanabe
ECS Transactions 98 ( 5 ) 533 - 546 2020.09 [Refereed]
Tianzhuo Zhan, Shuaizhe Ma, Zhicheng Jin, Hiroki Takezawa, Kohei Mesaki, Motohiro Tomita, Yen-Ju Wu, Yibin Xu, Takashi Matsukawa, Takeo Matsuki, Takanobu Watanabe
ACS Applied Materials & Interfaces 12 ( 30 ) 34441 - 34450 2020.07 [Refereed]
Effect of phonon-boundary scattering on phonon-drag factor in Seebeck coefficient of Si wire
Khotimatul Fauziah, Yuhei Suzuki, Takuto Nogita, Yoshinari Kamakura, Takanobu Watanabe, Faiz Salleh, Hiroya Ikeda
AIP Advances 10 ( 7 ) 075015 - 075015 2020.07 [Refereed]
R. Yokogawa, H. Takeuchi, Y. Arai, I. Yonenaga, M. Tomita, H. Uchiyama, T. Watanabe, A. Ogura
Applied Physics Letters 116 ( 24 ) 242104 - 242104 2020.06 [Refereed]
Effect of Thermal Boundary Resistance between the Interconnect Metal and Dielectric Interface on Temperature Increase of Interconnects in Deeply Scaled VLSI
Tianzhuo Zhan, Kaito Oda, Shuaizhe Ma, Motohiro Tomita, Zhicheng Jin, Hiroki Takezawa, Kohei Mesaki, Yen Ju Wu, Yibin Xu, Takashi Matsukawa, Takeo Matsuki, Takanobu Watanabe
ACS Applied Materials and Interfaces 12 ( 19 ) 22347 - 22356 2020.05 [Refereed]
Authorship:Last author, Corresponding author
Rina Sankawa, Takuya Onishi, Kohei Takahashi, Motohiro Tomita, Kotaro Mura, Takahiro Nakamura, Tetsuo Yoshimitsu, Takahiro Imai, Takanobu Watanabe
IEEJ Transactions on Fundamentals and Materials 140 ( 2 ) 64 - 69 2020.02 [Refereed]
Authorship:Corresponding author
Evaluation of temperature and germanium concentration dependence of EXAFS oscillations in Si-rich silicon germanium thin films
K. Yoshioka, R. Yokogawa, M. Koharada, H. Takeuchi, G. Ogasawara, I. Hirosawa, T. Watanabe, A. Ogura
ECS Transactions 98 ( 5 ) 473 - 479 2020 [Refereed]
Evaluation of thermal conductivity characteristics in Si nanowire covered with oxide by UV Raman spectroscopy
Ryo Yokogawa, Motohiro Tomita, Takanobu Watanabe, Atsushi Ogura
JAPANESE JOURNAL OF APPLIED PHYSICS 58 SDDF04 2019.06 [Refereed]
ノンドープ組成傾斜SiGeワイヤの微小ゼーベック係数測定
熊田剛大, 中村俊貴, 富田基裕, 中田壮哉, 高橋恒太, 黒澤昌志, 渡邉孝信
電子デバイス界面テクノロジー研究会(第24回) pp. 197-200 2019.01
Cavity-free micro thermoelectric energy harvester with Si nanowires
T. Watanabe, M. Tomita, T. Zhan, K. Shima, Y. Himeda, R. Yamato, T. Matsukawa, T. Matsuki
ECS Transactions 89 ( 3 ) 95 - 110 2019 [Refereed]
Effect of Phonon-Drag Contributed Seebeck Coefficient on Si-Wire Thermopile Voltage Output
Khotimatul Fauziah, Yuhei Suzuki, Yuki Narita, Yoshinari Kamakura, Takanobu Watanabe, Faiz Salleh, Hiroya Ikeda
IEICE Transactions on Electronics E102–C ( 6 ) 475 - 478 2019 [Refereed]
Motohiro Tomita, Shunsuke Oba, Yuya Himeda, Ryo Yamato, Keisuke Shima, Takehiro Kumada, Mao Xu, Hiroki Takezawa, Kohhei Mesaki, Kazuaki Tsuda, Shuichiro Hashimoto, Tianzhuo Zhan, Hui Zhang, Yoshinari Kamakura, Yuhhei Suzuki, Hiroshi Inokawa, Hiroya Ikeda, Takashi Matsukawa, Takeo Matsuki, Takanobu Watanabe
IEEE Transactions on Electron Devices 65 ( 11 ) 5180 - 5188 2018.11 [Refereed]
Authorship:Last author, Corresponding author
10μW/cm2-class high power density planar Si-nanowire thermoelectric energy harvester compatible with CMOS-VLSI technology
M. Tomita, S. Oba, Y. Himeda, R. Yamato, K. Shima, T. Kumada, M. Xu, H. Takezawa, K. Mesaki, K. Tsuda, S. Hashimoto, T. Zhan, H. Zhang, Y. Kamakura, Y. Suzuki, H. Inokawa, H. Ikeda, T. Matsukawa, T. Matsuki, T. Watanabe
Digest of Technical Papers - Symposium on VLSI Technology 2018-June 93 - 94 2018.10 [Refereed]
Enhancement of thermoelectric power of a Si nanowire micro thermoelectric generator by improving the thermal conductivity of AlN thermally conductive film
T. Zhan, R. Yamato, S. Hashimoto, S. Oba, Y. Himeda, Y. Xu, T. Matsukawa, T. Watanabe
Journal of Physics: Conference Series 1052 ( 1 ) 2018.07 [Refereed]
The possibility of mW/cm2-class on-chip power generation using ultrasmall si nanowire-based thermoelectric generators
Hui Zhang, Taiyu Xu, Shuichiro Hashimoto, Takanobu Watanabe
IEEE Transactions on Electron Devices 65 ( 5 ) 2016 - 2023 2018.05 [Refereed]
Miniaturized planar Si-nanowire micro-thermoelectric generator using exuded thermal field for power generation
Tianzhuo Zhan, Ryo Yamato, Shuichiro Hashimoto, Motohiro Tomita, Shunsuke Oba, Yuya Himeda, Kohei Mesaki, Hiroki Takezawa, Ryo Yokogawa, Yibin Xu, Takashi Matsukawa, Atsushi Ogura, Yoshinari Kamakura, Takanobu Watanabe
SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS 19 ( 1 ) 443 - 453 2018.05 [Refereed]
Development of interatomic potential of Ge(1-x-y)SixSny ternary alloy semiconductors for classical lattice dynamics simulation
Motohiro Tomita, Masataka Ogasawara, Takuya Terada, Takanobu Watanabe
Japanese Journal of Applied Physics 57 ( 4 ) 2018.04 [Refereed]
Evaluation of Laterally Graded Silicon Germanium Wires for Thermoelectric Devices Fabricated by Rapid Melting Growth
Ryo Yokogawa, Shuichiro Hashimoto, Kouta Takahashi, Shunsuke Oba, Motohiro Tomita, Masashi Kurosawa, Takanobu Watanabe, Atsushi Ogura
ECS Transactions 86 ( 7 ) 87 - 93 2018 [Refereed]
Evaluating the Relationship between Phonon and Thermal Properties of Group IV Alloys Using Molecular Dynamics Simulation
Motohiro Tomita, Masataka Ogasawara, Takuya Terada, Takanobu Watanabe
ECS Transactions 86 ( 7 ) 337 - 345 2018 [Refereed]
Enhanced nickelidation rate in silicon nanowires with interfacial lattice disorder
Shuichiro Hashimoto, Ryo Yokogawa, Shunsuke Oba, Shuhei Asada, Taiyu Xu, Motohiro Tomita, Atsushi Ogura, Takashi Matsukawa, Meishoku Masahara, Takanobu Watanabe
JOURNAL OF APPLIED PHYSICS 122 ( 14 ) 2017.10 [Refereed]
Anomalous Seebeck coefficient observed in silicon nanowire micro thermoelectric generator
S. Hashimoto, S. Asada, T. Xu, S. Oba, Y. Himeda, R. Yamato, T. Matsukawa, T. Matsuki, T. Watanabe
APPLIED PHYSICS LETTERS 111 ( 2 ) 2017.07
Evaluation of controlled strain in silicon nanowire by UV Raman spectroscopy
Ryo Yokogawa, Shuichiro Hashimoto, Shuhei Asada, Motohiro Tomita, Takanobu Watanabe, Atsushi Ogura
JAPANESE JOURNAL OF APPLIED PHYSICS 56 ( 6 ) 2017.06 [Refereed]
Anomalous flatband voltage shift of AlFxOy/Al2O3 MOS capacitors: A consideration on dipole layer formation at dielectric interfaces with different anions
Jiayang Fei, Ryota Kunugi, Takanobu Watanabe, Koji Kita
APPLIED PHYSICS LETTERS 110 ( 16 ) 2017.04 [Refereed]
Driving force of oxygen-ion migration across high-k/SiO2 interface
Ryota Kunugi, Nobuhiro Nakagawa, Takanobu Watanabe
APPLIED PHYSICS EXPRESS 10 ( 3 ) 2017.03 [Refereed]
Fundamental study on application of the nanocomposite to an electrical rotating machine
Kotaro Mura, Toshihiro Tsuda, Tetsuo Yoshimitsu, Takuya Onishi, Shuichiro Hashimoto, Takanobu Watanabe
IEEJ Transactions on Fundamentals and Materials 137 ( 11 ) 645 - 651 2017 [Refereed]
A Scalable Si-based Micro Thermoelectric Generator
Takanobu Watanabe, Shuhei Asada, Taiyu Xu, Shuichiro Hashimoto, Shunsuke Ohba, Yuya Himeda, Ryo Yamato, Hui Zhang, Motohiro Tomita, Takashi Matsukawa, Yoshinari Kamakura, Hiroya Ikeda
2017 IEEE ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM) 86 - 87 2017 [Refereed]
Nano-scale Evaluation of Electrical Tree Initiation in Silica/Epoxy Nano-composite Thin Film
2017 INTERNATIONAL SYMPOSIUM ON ELECTRICAL INSULATING MATERIALS (ISEIM), VOLS 1 & 2 359 - 362 2017 [Refereed]
Molecular Dynamics of Dipole Layer Formation at High-k/SiO2 Interface
Watanabe Takanobu
SEMICONDUCTORS, DIELECTRICS, AND METALS FOR NANOELECTRONICS 15: IN MEMORY OF SAMARES KAR 80 ( 1 ) 313 - 325 2017 [Refereed]
Positive and negative dipole layer formation at high-k/SiO2 interfaces simulated by classical molecular dynamics
Kosuke Shimura, Ryota Kunugi, Atsushi Ogura, Shinichi Satoh, Jiayang Fei, Koji Kita, Takanobu Watanabe
JAPANESE JOURNAL OF APPLIED PHYSICS 55 ( 4 ) 2016.04 [Refereed]
ON current enhancement of nanowire Schottky barrier tunnel field effect transistors
Kohei Takei, Shuichiro Hashimoto, Jing Sun, Xu Zhang, Shuhei Asada, Taiyu Xu, Takashi Matsukawa, Meishoku Masahara, Takanobu Watanabe
JAPANESE JOURNAL OF APPLIED PHYSICS 55 ( 4 ) 2016.04 [Refereed]
M. Tomita, A. Ogura, T. Watanabe
ECS Transactions 75 ( 8 ) 785 - 794 2016
Effect of a SiO2 layer on the thermal transport properties of < 100 > Si nanowires: A molecular dynamics study
Tomofumi Zushi, Kenji Ohmori, Keisaku Yamada, Takanobu Watanabe
PHYSICAL REVIEW B 91 ( 11 ) 115308 2015.03 [Refereed]
Particle-based Semiconductor Device Simulation Accelerated by GPU computing
Akito Suzuki, Takefumi Kamioka, Yoshinari Kamakura, Takanobu Watanabe
Japan Society for Simulation Technology 2 ( 1 ) 211 - 224 2015 [Refereed]
Molecular dynamics study on the formation of dipole layer at high-k/SiO2 interfaces
Ryo Kuriyama, Masahiro Hashiguchi, Ryusuke Takahashi, Kosuke Shimura, Atsushi Ogura, Shinichi Satoh, Takanobu Watanabe
JAPANESE JOURNAL OF APPLIED PHYSICS 53 ( 8 ) 24 - 27 2014.08 [Refereed]
Impact of thermal history of Si nanowire fabrication process on Ni silicidation rate
Hiroki Yamashita, Hiroki Kosugiyama, Yasuhiro Shikahama, Shuichiro Hashimoto, Kohei Takei, Jing Sun, Takashi Matsukawa, Meishoku Masahara, Takanobu Watanabe
JAPANESE JOURNAL OF APPLIED PHYSICS 53 ( 8 ) 085201 2014.08 [Refereed]
A novel hetero-junction Tunnel-FET using Semiconducting silicide-Silicon contact and its scalability
Yan Wu, Hiroyuki Hasegawa, Kuniyuki Kakushima, Kenji Ohmori, Takanobu Watanabe, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Yoshinori Kataoka, Kenji Natori, Keisaku Yamada, Hiroshi Iwai
MICROELECTRONICS RELIABILITY 54 ( 5 ) 899 - 904 2014.05 [Refereed]
Phonon Dispersion in < 100 > Si Nanowire Covered with SiO2 Film Calculated by Molecular Dynamics Simulation
Tomofumi Zushi, Kosuke Shimura, Masanori Tomita, Kenji Ohmori, Keisaku Yamada, Takanobu Watanabe
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY 3 ( 5 ) P149 - P154 2014 [Refereed]
Molecular Dynamics Simulation of Dipole Layer Formation at High-k/SiO2 Interfaces
T. Watanabe, R. Kuriyama, M. Hashiguchi, R. Takahashi, K. Shimura, A. Ogura, S. Satoh
SEMICONDUCTORS, DIELECTRICS, AND METALS FOR NANOELECTRONICS 12 64 ( 8 ) 3 - 15 2014 [Refereed]
Full-scale Whole Device EMC/MD Simulation of Si Nanowire Transistor Including Source and Drain Regions by Utilizing Graphic Processing Units
Akito Suzuki, Takanobu Watanabe, Takefumi Kamioka, Yoshinari Kamakura
2014 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD) 357 - 360 2014 [Refereed]
Impact of Image Force Effect on Gate-All-Around Schottky Barrier Tunnel FET
Shuichiro Hashimoto, Hiroki Kosugiyama, Kohei Takei, Jing Sun, Yuji Kawamura, Yasuhiro Shikahama, Kenji Ohmori, Takanobu Watanabe
2014 IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE (INEC) 2014 [Refereed]
Source-induced RDF Overwhelms RTN in Nanowire Transistor: Statistical Analysis with Full Device EMC/MD Simulation Accelerated by GPU Computing
Akito Suzuki, Takefumi Kamioka, Yoshinari Kamakura, Kenji Ohmori, Keisaku Yamada, Takanobu Watanabe
2014 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) 713 - 716 2014 [Refereed]
Impact of Image Force Effect on Gate-All-Around Schottky Barrier Tunnel FET
Shuichiro Hashimoto, Hiroki Kosugiyama, Kohei Takei, Jing Sun, Yuji Kawamura, Yasuhiro Shikahama, Kenji Ohmori, Takanobu Watanabe
2014 IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE (INEC) 2014
Influence of Structural Parameters on Electrical Characteristics of Schottky Tunneling Field-Effect Transistor and Its Scalability
Yan Wu, Chunmeng Dou, Feng Wei, Kuniyuki Kakushima, Kenji Ohmori, Parhat Ahmet, Takanobu Watanabe, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Keisaku Yamada, Yoshinori Kataoka, Takeo Hattori, Hiroshi Iwai
JAPANESE JOURNAL OF APPLIED PHYSICS 52 ( 4 ) 2013.04 [Refereed]
Disorder-Induced Enhancement of Avalanche Multiplication in a Silicon Nanodot Array
Nobuya Mori, Masanori Tomita, Hideki Minari, Takanobu Watanabe, Nobuyoshi Koshida
JAPANESE JOURNAL OF APPLIED PHYSICS 52 ( 4 ) 04CJ04 2013.04 [Refereed]
Effects of atomic disorder on impact ionization rate in silicon nanodots
N. Mori, M. Tomita, H. Minari, T. Watanabe, N. Koshida
AIP Conference Proceedings 1566 381 - 382 2013 [Refereed]
Nano-device Simulation from an Atomistic View
N. Mori, G. Mil'nikov, H. Minari, Y. Kamakura, T. Zushi, T. Watanabe, M. Uematsu, K. M. Itoh, S. Uno, H. Tsuchiya
2013 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) 2013 [Refereed]
Phonon Dispersion in < 100 > Si Nanowire Covered with SiO2 Film Calculated by Molecular Dynamics Simulation
T. Watanabe, T. Zushi, M. Tomita, R. Kuriyama, N. Aoki, T. Kamioka
SIGE, GE, AND RELATED COMPOUNDS 5: MATERIALS, PROCESSING, AND DEVICES 50 ( 9 ) 673 - 680 2012 [Refereed]
Impact of single trapped charge in gate-all-around nanowire channels studied by ensemble Monte Carlo/molecular dynamics simulation
Takefumi Kamioka, Hiroya Imai, Yoshinari Kamakura, Kenji Ohmori, Kenji Shiraishi, Masanori Niwa, Keisaku Yamada, Takanobu Watanabe
2012 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2012) Proceedings 11 - 14 2012 [Refereed]
Molecular Dynamics Simulation of Heat Transport in Silicon Fin Structures
Tomofumi Zushi, Takanobu Watanabe, Kenji Ohmori, Keisaku Yamada
2012 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2012) Proceedings 59 - 62 2012 [Refereed]
Challenge for STM observation of dopant activation process on Si(001): in-situ ion irradiation and hydrogenation
Takefumi Kamioka, Fumiya Isono, Takahiro Yoshida, Iwao Ohdomari, Takanobu Watanabe
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 6 9 ( 6 ) 1418 - 1422 2012 [Refereed]
Real-Time Scanning Tunneling Microscopy of Au Ion Irradiation Effects on Si(111) Surface
Takefumi Kamioka, Fumiya Isono, Takanobu Watanabe, Iwao Ohdomari
表面科学 33 153 - 158 2012
Current Fluctuation in Sub-Nano Second Regime in Gate-All-Around Nanowire Channels Studied with Ensemble Monte Carlo/Molecular Dynamics Simulation
T. Kamioka, H. Imai, Y. Kamakura, K. Ohmori, K. Shiraishi, M. Niwa, K. Yamada, T. Watanabe
2012 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) 399 - 402 2012
Impact of oxidation induced atomic disorder in narrow Si nanowires on transistor performance
H. Minari, T. Zushi, T. Watanabe, Y. Kamakura, S. Uno, N. Mori
2011 Symposium on VLSI Technology Digest of Technical Papers 2011.06 [Refereed]
Dynamic bond-order force field
Takanobu Watanabe
JOURNAL OF COMPUTATIONAL ELECTRONICS 10 ( 1-2 ) 2 - 10 2011.06 [Refereed]
Effects of atomic disorder on carrier transport in Si nanowire transistors
Hideki Minari, Tomofumi Zushi, Takanobu Watanabe, Yoshinari Kamakura, Nobuya Mori
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 27 - 30 2011 [Refereed]
Impact of channel shape on carrier transport investigated by ensemble monte carlo/molecular dynamics simulation
T. Kamioka, H. Imai, T. Watanabe, K. Ohmori, K. Shiraishi, Y. Kamakura
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 83 - 86 2011 [Refereed]
Impact of Self-Heating Effect on the Electrical Characteristics of Nanoscale Devices
Yoshinari Kamakura, Tomofumi Zushi, Takanobu Watanabe, Nobuya Mori, Kenji Taniguchi
TECHNOLOGY EVOLUTION FOR SILICON NANO-ELECTRONICS 470 14 - + 2011 [Refereed]
Molecular Dynamics Simulation on Longitudinal Optical Phonon Mode Decay and Heat Transport in a Silicon Nano-Structure Covered with Oxide Films
Tomofumi Zushi, Yoshinari Kamakura, Kenji Taniguchi, Iwao Ohdomari, Takanobu Watanabe
JAPANESE JOURNAL OF APPLIED PHYSICS 50 ( 1 ) 010102 2011.01 [Refereed]
Numerical simulation of transient heat conduction in nanoscale Si devices
Yoshinari Kamakura, Tomofumi Zushi, Takanobu Watanabe, Nobuya Mori, Kenji Taniguchi
ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings 1745 - 1748 2010 [Refereed]
Molecular Dynamics Simulation on LO Phonon Mode Decay in Si Nano-structure Covered with Oxide Films
T. Zushi, I. Ohdomari, T. Watanabe, Y. Kamakura, K. Taniguchi
SISPAD 2010 - 15TH INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES 73 - 76 2010 [Refereed]
Misfit Stress Relaxation Mechanism in GeO2/Ge Systems: A Classical Molecular Simulation Study
T. Watanabe, T. Onda, I. Ohdomari
SIGE, GE, AND RELATED COMPOUNDS 4: MATERIALS, PROCESSING, AND DEVICES 33 ( 6 ) 901 - 912 2010 [Refereed]
Coupled Monte Carlo Simulation of Transient Electron-Phonon Transport in Nanoscale Devices
Yoshinari Kamakura, Nubuya Mori, Kenji Taniguchi, Tomofumi Zushi, Takanobu Watanabe
SISPAD 2010 - 15TH INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES 89 - 92 2010 [Refereed]
Real-Time Scanning Tunneling Microscopy Observation of Si(111) Surface Modified by Au+ Ion Irradiation
Takefumi Kamioka, Kou Sato, Yutaka Kazama, Iwao Ohdomari, Takanobu Watanabe
JAPANESE JOURNAL OF APPLIED PHYSICS 49 ( 1 ) 015702 2010 [Refereed]
Simulation of Heat Transport in Silicon Nano-structures Covered with Oxide Films
Tomofumi Zushi, Yoshinari Kamakura, Kenji Taniguchi, Iwao Ohdomari, Takanobu Watanabe
JAPANESE JOURNAL OF APPLIED PHYSICS 49 ( 4 ) 04DN08 2010 [Refereed]
Demonstration of Transconductance Enhancement on (110) and (001) Strained-Nanowire FETs
A. Seike, H. Takai, I. Tsuchida, J. Masuda, D. Kosemura, A. Ogura, T. Watanabe, I. Ohdomari
PHYSICS AND TECHNOLOGY OF HIGH-K GATE DIELECTRICS 7 25 ( 6 ) 427 - 430 2009 [Refereed]
Electron-Phonon Scattering Effect on Strained Si Nanowire FETs at Low Temperature
I. Tsuchida, A. Seike, H. Takai, J. Masuda, D. Kosemura, A. Ogura, T. Watanabe, I. Ohdomari
PHYSICS AND TECHNOLOGY OF HIGH-K GATE DIELECTRICS 7 25 ( 6 ) 439 - 443 2009 [Refereed]
Potential energy landscape of an interstitial O2 molecule in a SiO2 film near the SiO2/Si(001) interface
Hiromichi Ohta, Takanobu Watanabe, Iwao Ohdomari
Physical Review B - Condensed Matter and Materials Physics 78 ( 15 ) 2008.10 [Refereed]
In-plane X-ray Diffraction Profiles from Organosilane Monolayer/SiO2 Models
Hideaki Yamamoto, Takanobu Watanabe, Iwao Ohdomari
APPLIED PHYSICS EXPRESS 1 ( 10 ) 105002 2008.10 [Refereed]
Potential energy landscape of an interstitial O-2 molecule in a SiO2 film near the SiO2/Si(001) interface
Hiromichi Ohta, Takanobu Watanabe, Iwao Ohdomari
PHYSICAL REVIEW B 78 ( 15 ) 155326 2008.10 [Refereed]
The main factor of the decrease in activity of luciferase on the Si surface
Katsuhiko Nishiyama, Takanobu Watanabe, Tadatsugu Hoshino, Iwao Ohdomari
CHEMICAL PHYSICS LETTERS 453 ( 4-6 ) 279 - 282 2008.03 [Refereed]
Trans conductance enhancement of Si nanowire transistors by oxide-induced strain
A. Seike, T. Tange, I. Sano, Y. Sugiura, I. Tsuchida, H. Ohta, T. Watanabe, D. Kosemura, A. Ogura, I. Ohdomari
2008 IEEE INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUIT DESIGN AND TECHNOLOGY, PROCEEDINGS 207 - + 2008 [Refereed]
Transconductance enhancement by utilizing pattern dependent oxidation in silicon nanowire field-effect transistors
A. Seike, T. Tange, I. Sano, Y. Sugiura, I. Tsuchida, H. Ohta, T. Watanabe, D. Kosemura, A. Ogura, I. Ohdomari
ECS Transactions 13 ( 1 ) 351 - 358 2008
Ensemble Monte Carlo/Molecular Dynamics Simulation of Electron Mobility in Silicon with Ordered Dopant Arrays
T. Terunuma, T. Watanabe, T. Shinada, I. Ohdomari, Y. Kamakura, K. Taniguchi
SISPAD: 2008 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES 29 - + 2008
Strain-induced transconductance enhancement by pattern dependent oxidation in silicon nanowire field-effect transistors
A. Seike, T. Tange, Y. Sugiura, I. Tsuchida, H. Ohta, T. Watanabe, D. Kosemura, A. Ogura
APPLIED PHYSICS LETTERS 91 ( 20 ) 202117 2007.11
Strain distribution around SiO2/Si interface in Si nanowires: A molecular dynamics study
Hiromichi Ohta, Takanobu Watanabe, Iwao Ohdomari
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 46 ( 5B ) 3277 - 3282 2007.05 [Refereed]
Analysis of binding energies between luciferin and luciferase adsorbed on Si surface by docking simulations
Katsuhiko Nishiyama, Takanobu Watanabe, Tadatsugu Hoshino, Iwao Ohdomari
CHEMICAL PHYSICS LETTERS 439 ( 1-3 ) 148 - 150 2007.05 [Refereed]
A new kinetic equation for thermal oxidation of silicon replacing the deal-grove equation
Takanobu Watanabe, Iwao Ohdomari
ECS Transactions 6 ( 3 ) 465 - 481 2007 [Refereed]
A kinetic equation for thermal oxidation of silicon replacing the deal-grove equation
Takanobu Watanabe, Iwao Ohdomari
JOURNAL OF THE ELECTROCHEMICAL SOCIETY 154 ( 12 ) G270 - G276 2007 [Refereed]
New linear-parabolic rate equation for thermal oxidation of silicon
Takanobu Watanabe, Kosuke Tatsumura, Iwao Ohdomari
PHYSICAL REVIEW LETTERS 96 ( 19 ) 196102 2006.05 [Refereed]
Structural investigation of organosilane self-assembled monolayers by atomic scale simulation
H Yamamoto, T Watanabe, K Nishiyama, K Tatsumura, Ohdomari, I
JOURNAL DE PHYSIQUE IV 132 189 - 193 2006.03
Analysis of interactions between luciferase and Si substrates using molecular dynamics simulations
K Nishiyama, T Watanabe, T Hoshino, Ohdomari, I
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 45 ( 2A ) 1021 - 1025 2006.02
International technology roadmap for semiconductors 2005 edition
Takanobu Watanabe, Kosuke Tatsumura, Iwao Ohdomari
Physical Review Letters 96 ( 19 ) 2006 [Refereed]
Analysis of interactions between green fluorescent protein and silicon substrates using molecular dynamics simulations
K Nishiyama, T Watanabe, T Hoshino, Ohdomari, I
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 44 ( 11 ) 8210 - 8215 2005.11
Reactions and diffusion of atomic and molecular oxygen in the SiO2 network
K Tatsumura, T Shimura, E Mishima, K Kawamura, D Yamasaki, H Yamamoto, T Watanabe, M Umeno, Ohdomari, I
PHYSICAL REVIEW B 72 ( 4 ) 045205 2005.07
ダイナミックボンド型分子動力学法の開発
渡邉孝信
化学工業 56 65 - 71 2005
Si island formation on domain boundaries induced by Ar ion irradiation on high-temperature Si(111)-7x7 dimer-adatom-stacking fault surfaces
M Uchigasaki, K Tomiki, T Kamioka, E Nakayama, T Watanabe, Ohdomari, I
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 44 ( 8-11 ) L313 - L314 2005
SiO(2)/Si interface structure and its formation studied by large-scale molecular dynamics simulation
T Watanabe, K Tatsumura, Ohdomari, I
APPLIED SURFACE SCIENCE 237 ( 1-4 ) 125 - 133 2004.10
Improved interatomic potential for stressed Si, O mixed systems
T Watanabe, D Yamasaki, K Tatsumura, Ohdomari, I
APPLIED SURFACE SCIENCE 234 ( 1-4 ) 207 - 213 2004.07
Large-scale atomistic modeling of thermally grown SiO(2) on Si(111) substrate
K Tatsumura, T Watanabe, D Yamasaki, T Shimura, M Umeno, Ohdomari, I
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 43 ( 2 ) 492 - 497 2004.02
Residual order within thermally grown amorphous SiO2 on crystalline silicon
K Tatsumura, T Watanabe, D Yamasaki, T Shimura, M Umeno, Ohdomari, I
PHYSICAL REVIEW B 69 ( 8 ) 085212 2004.02
Effects of thermal history on residual order of thermally grown silicon dioxide
K Tatsumura, T Watanabe, D Yamasaki, T Shimura, M Umeno, Ohdomari, I
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 42 ( 12 ) 7250 - 7255 2003.12
Probability of atomic or molecular oxygen species in silicon and silicon dioxide
T Hoshino, M Hata, S Neya, Y Nishioka, T Watanabe, K Tatsumura, Ohdomari, I
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 42 ( 10 ) 6535 - 6542 2003.10
Diffusion of molecular and atomic oxygen in silicon oxide
T Hoshino, M Hata, S Neya, Y Nishioka, T Watanabe, K Tatsumura, L Ohdomari
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 42 ( 6A ) 3560 - 3565 2003.06
An estimate of the Hausdorff dimension of a weak self-similar set
A Kitada, T Konishi, T Watanabe
CHAOS SOLITONS & FRACTALS 13 ( 2 ) 363 - 366 2002.02
Nucleation site of Cu on the H-terminated Si(111) surface
K Tatsumura, T Watanabe, K Hara, T Hoshino, Ohdomari, I
PHYSICAL REVIEW B 64 ( 11 ) 2001.09
Initial Oxidation Process of Si(001) Simulated by Using a Parallel PC System
T. Watanabe, K. Tatsumura, A. Kajimoto, K. Ogura, Y. Inaba, I. Ohdomari
Semiconductor Technology/The Electrochemical Society 1 242 - 246 2001
Modeling of a SiO2/Si(001) structure including step and terrace configurations
T Watanabe, Ohdomari, I
APPLIED SURFACE SCIENCE 162 116 - 121 2000.08
Kinetics of dimer-adatom-stacking-fault reconstruction on laser-quenched Si(111) surfaces
K Shimada, T Ishimaru, T Watanabe, T Yamawaki, M Osuka, T Hoshino, Ohdomari, I
PHYSICAL REVIEW B 62 ( 4 ) 2546 - 2551 2000.07
Impact of structural strained layer near SiO2/Si interface on activation energy of time-dependent dielectric breakdown
Y Harada, K Eriguchi, M Niwa, T Watanabe, Ohdomari, I
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 39 ( 7B ) 4687 - 4691 2000.07
Impact of Structural Strained Layer near SiO2/Si Interface on Activation Energy of Time-Dependent Dielectric Breakdown
Y. Harada, K. Eriguchi, M. Niwa, T. Watanabe, I. Ohdomari
VLSI symposium Tech. Digest/Japan Society of Applied Physics 216 - 219 2000
Novel interatomic potential energy function for Si, O mixed systems
T Watanabe, H Fujiwara, H Noguchi, T Hoshino, Ohdomari, I
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS 38 ( 4A ) L366 - L369 1999.04
Modeling of SiO2/Si(100) interface structure by using extended -Stillinger-Weber potential
T Watanabe, Ohdomari, I
THIN SOLID FILMS 343 370 - 373 1999.04
Influence of oxygen on the formation of Si(111)-7x7 domains studied by scanning tunneling microscopy
T Ishimaru, T Hoshino, H Kawada, K Shimada, T Watanabe, Ohdomari, I
PHYSICAL REVIEW B 58 ( 15 ) 9863 - 9866 1998.10
Effect of fixed particles on periodic adatom arrangements on Si(111) unreconstructed surfaces
T Watanabe, T Handa, T Hoshino, Ohdomari, I
APPLIED SURFACE SCIENCE 130 6 - 12 1998.06
Theoretical investigation on the formation process of the stacking-fault triangle in the Si(111)-7x7 structure
T Hoshino, N Kamijou, H Fujiwara, T Watanabe, Ohdomari, I
SURFACE SCIENCE 394 ( 1-3 ) 119 - 128 1997.12
Monte Carlo study on formation of periodic structures on Si(111) surfaces
T Watanabe, T Hoshino, Ohdomari, I
SURFACE SCIENCE 389 ( 1-3 ) 375 - 381 1997.11
Mechanism of H-2 desorption from H-terminated Si(001) surfaces
T Watanabe, T Hoshino, Ohdomari, I
APPLIED SURFACE SCIENCE 117 67 - 71 1997.06
Consideration of atom movement during Si surface reconstruction
Ohdomari, I, T Watanabe, K Kumamoto, T Hoshino
PHASE TRANSITIONS 62 ( 4 ) 245 - 258 1997
Silicon-based micro thermoelectric generator fabricated by CMOS compatible process
Takanobu Watanabe
IMFEDK 2017 - 2017 International Meeting for Future of Electron Devices, Kansai 22 - 23 2017.07
WU Yan, 長谷川明紀, 角嶋邦之, 渡辺孝信, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋
応用物理学会春季学術講演会講演予稿集(CD-ROM) 61st ROMBUNNO.20A-D9-2 2014.03
KAMIOKA Takefumi, IMAI Hiroya, OHMORI Kenji, SHIRAISHI Kenji, KAMAKURA Yoshinari, WATANABE Takanobu
Technical report of IEICE. SDM 111 ( 281 ) 45 - 50 2011.11
Impacts of strained SiO2 on TDDB lifetime projection
Y Harada, K Eriguchi, M Niwa, T Watanabe, Ohdomari, I
2000 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS 216 - 217 2000 [Refereed]
羽ばたきロボット
特許5857658
渡邉 孝信, 澤根 慧, 富永 峻平, 金川 清, 山本
Patent
Research Award (High-Impact Publication)
2018.02 Waseda University
Winner: WATANABE, Takanobu
Teaching Award
2016.02 Waseda University
Winner: WATANABE, Takanobu
JSAP Young Scientist Presentation Award
2000.11 The Japan Society of Applied Physics
Winner: WATANABE, Takanobu
Inoue Research Award
1999.02 Inoue Foundation for Science
Winner: WATANABE, Takanobu
垂直離着陸型羽ばたき飛翔ロボットの自律飛行制御
総務省 戦略的情報通信研究開発推進事業(SCOPE)平成30年度 独創的な人向け特別枠「異能vation」プログラム「破壊的な挑戦部門」
Project Year :
渡邉 孝信
Development of Silicon-Based Thermoelectric Device Utilizing Computational Phononics
Japan Science and Technology Agency Strategic Basic Research Programs, CREST
Project Year :
WATANABE, Takanobu
異種酸化物界面の分極を予測するマテリアル・インフォマティクスの開拓
科学研究費助成事業(早稲田大学) 科学研究費助成事業(基盤研究(B))
Project Year :
渡邉 孝信
二眼カメラを搭載したロボットに関し、ステレオ画像からの周辺情報取得技術の研究
Project Year :
渡邉 孝信
計算科学を駆使したNiシリサイドナノワイヤ形成プロセスの完全制御
科学研究費助成事業(早稲田大学) 科学研究費助成事業(挑戦的萌芽研究)
Project Year :
渡邉 孝信
電子機器ナノテクイノベーションに関する共同研究
Project Year :
渡邉 孝信
Development and application of new kinetic theory for thermal oxidation of silicon replacing the Deal-Grove model
Project Year :
WATANABE, Takanobu
ダイナミックボンド型大規模分子動力学法の開発
科学技術振興機構 戦略的創造研究推進事業 さきがけ
Project Year :
渡邉 孝信
Control of Silicon Nanostructure Oxidation by Nitrogen Doping
Real-Time Scanning Tunneling Microscopy of Nano-Scale Surface Modification by Dopant Ion Irradiation
OHDOMARI, Iwao
極微細トランジスタ中における準弾道電子+準弾道フォノン系の統合シミュレーション
科学研究費助成事業(大阪大学) 科学研究費助成事業(特定領域研究)
鎌倉 良成
Development of Simulator for Transient Electrothermal Properties of Nanoscale Devices
KAMAKURA, Yoshinari
立体構造半導体/酸化膜界面のハイスループットモデリング技術の開発
科学研究費助成事業(早稲田大学) 科学研究費助成事業(基盤研究(B))
Scalable CMOS Thermoelectric Energy Harvester Using Si Nanowires
WATANABE, Takanobu [Invited]
The 13th PACRIM conference
Presentation date: 2019.10
Cavity-Free Micro Thermoelectric Energy Harvester with Si Nanowires
WATANABE, Takanobu [Invited]
235th ECS Meeting, G01: Silicon Compatible Emerging Materials
Presentation date: 2019.05
MOSプレーナプロセスで製造可能な微小熱電発電デバイス
渡邉 孝信 [Invited]
化学工学会 反応工学部会 CVD反応分科会第30回シンポジウム
Presentation date: 2019.03
シリコン製マイクロ熱電発電デバイスの開発
渡邉 孝信 [Invited]
ENEX2019 エネルギーハーベスティングセミナー
Presentation date: 2019.02
CMOS Friendly Silicon-based Micro Thermoelectric Generator
WATANABE, Takanobu [Invited]
5th International Conference on Nanoscience and Nanotechnology (ICONN2019)
Presentation date: 2019.01
マイクロ熱電発電デバイスのスケーリング戦略
渡邉 孝信
JST-CREST「微小エネルギーを利用した革新的な環境発電技術の創出」領域公開シンポジウム
Presentation date: 2018.11
Si-CMOS高出力熱電発電デバイスの開発
渡邉 孝信 [Invited]
電気学会 電子・情報・システム部門大会
Presentation date: 2018.09
Deal-Groveモデル再考
渡邉 孝信 [Invited]
応用物理学会シリコンテクノロジー分科会第207回研究集会「シリコン表面および酸化膜界面特性の新世代への探求」
Presentation date: 2018.05
CMOSコンパチブルSiマイクロ熱電発電デバイス
渡邉 孝信 [Invited]
学際・国際的高度人材育成ライフイノベーションマテリアル創製共同研究プロジェクト(6大学連携プロジェクト)第2回公開討論会
Presentation date: 2018.03
IV族混晶のマイクロ熱電発電デバイス応⽤
渡邉 孝信 [Invited]
第65回応用物理学会春季学術講演会
Presentation date: 2018.03
オン・シリコン熱電発電デバイスの開発
渡邉 孝信
早稲田大学ナノテクノロジーフォーラム第4回分科会ワークショップ(グリーンエレクトロニクス分野)「革新的エナジー・ハーベスティングに向けた材料・デバイス技術」
Presentation date: 2018.03
Molecular Dynamics of Dipole Layer Formation at High-k/SiO2 Interface
WATANABE, Takanobu [Invited]
232nd ECS MEETING
Presentation date: 2017.10
Formation Mechanisms of Gate Oxide Films
WATANABE, Takanobu [Invited]
2017 International Conference on Solid State Devices and Materials (SSDM 2017)
Presentation date: 2017.09
熱電発電デバイスの微細化戦略
渡邉 孝信 [Invited]
フォノンエンジニアリング研究グループ・JST「微小エネ」領域合同研究会
Presentation date: 2017.07
Silicon-based Micro Thermoelectric Generator Fabricated by CMOS Compatible Process
WATANABE, Takanobu [Invited]
The 2017 International Meeting for Future of Electron Devices, Kansai (IMFEDK2017)
Presentation date: 2017.06
A Scalable Si-based Micro Thermoelectric Generator,
WATANABE, Takanobu [Invited]
Electron Devices Technology and Manufacturing Conference (EDTM2017)
Presentation date: 2017.03
オン・シリコン熱電発電デバイスの開発
渡邉 孝信 [Invited]
電気学会ナノエレクトロニクス新機能創出・集積化技術専門員会「フォノンエンジニアリング」
Presentation date: 2016.11
Atomistic Origin of Dipole Layer at High-k/SiO2 Interface
WATANABE, Takanobu [Invited]
13th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-13)
Presentation date: 2016.10
Molecular Dynamics Simulations on the Formation of Dielectric Thin Films and Interface Properties
WATANABE, Takanobu [Invited]
2016 International Conference on Solid State Devices and Materials (SSDM 2016)
Presentation date: 2016.09
Statistical Simulation of Noise and Fluctuations in Nano-scale Silicon Transistors
WATANABE, Takanobu [Invited]
BIT’s 5th Annual World Congress of Advanced Materials-2016 (WCAM-2016)
Presentation date: 2016.06
粒子ベースキャリア輸送シミュレーションによるナノデバイス特性揺らぎの統計的解析
渡邉 孝信 [Invited]
電子デバイス界面テクノロジー研究会, 東レ研修センター
Presentation date: 2016.01
Impacts of RDF, RTN, and Shot Noise on Nanowire Transistor Performance Studied by Ensemble Monte Carlo / Molecular Dynamics Simulation
WATANABE, Takanobu [Invited]
2015 International Conference on Solid State Devices and Materials (SSDM 2015)
Presentation date: 2015.09
EMC/MDシミュレーションによるナノワイヤトランジスタ特性の揺らぎ解析
渡邉 孝信 [Invited]
電気学会 電子・情報・システム部門大会
Presentation date: 2015.08
Molecular Dynamics Simulation of Dipole Layer Formation at High-k/SiO2 Interface
WATANABE, Takanobu
226th Meeting of The Electrochemical Society
Presentation date: 2014.10
Molecular dynamics simulation of gate dielectric thin films
WATANABE, Takanobu [Invited]
The 5th NIMS/MANA-Waseda University International Symposium
Presentation date: 2014.03
分子動力学法による酸化膜被覆型Siナノワイヤのフォノン解析
Presentation date: 2014.03
MD法で探る半導体と絶縁膜の界面構造
渡邉 孝信 [Invited]
富士通計算化学ユーザーフォーラム2013
Presentation date: 2013.11
Al2O3/SiO2界面の分子動力学シミュレーション
渡邉 孝信 [Invited]
CVD反応分科会 第21回シンポジウム
Presentation date: 2013.11
Recent Progress in Molecular Dynamics Simulation of Semiconductor Interfaces
WATANABE, Takanobu [Invited]
2013 NIMS CONFERENCE
Presentation date: 2013.07
Phonon Dispersion in <100> Si Nanowire Covered with SiO2 Film Calculated by Molecular Dynamics Simulation
WATANABE, Takanobu
PRiME 2012, ECS 222nd Meeting, SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 5
Presentation date: 2012.10
ナノプロセス研究のための分子動力学計算技術
渡邉 孝信 [Invited]
第8 回プラズマエレクトロニクス分科会新領域研究会
Presentation date: 2011.10
Force Field Approaches for Modeling Oxide-Semiconductor Interfaces
WATANABE, Takanobu [Invited]
3rd Asian Consortium on Computational Material Science (ACCMS) Working Group Meeting
Presentation date: 2011.04
Si 系トンネルFET のシミュレーション
渡邉 孝信 [Invited]
電気学会シリコンナノデバイス集積化技術調査専門委員会「急峻サブスレショルドデバイスの現状と将来展望」
Presentation date: 2010.11
Molecular Dynamics Simulation of Thermal Properties of Nano-scale Silicon Structures Covered with Oxide Film
WATANABE, Takanobu [Invited]
The 3rd Advanced Materials Development and Integration of Novel Structured Metallic and Inorganic Materials (AMDI-3)
Presentation date: 2010.11
Misfit Stress Relaxation Mechanism in GeO2/Ge Systems: A Classical Molecular Simulation Study
WATANABE, Takanobu
ECS 218th meeting
Presentation date: 2010.10
Deal-Groveモデルに代わるシリコン熱酸化速度理論,” 第29回表面科学学術講演会, タワーホール船堀, 東京, 2009年10月28日. 恩
渡邉 孝信 [Invited]
第29回表面科学学術講演会
Presentation date: 2009.10
分子動力学法によるGeO2/Ge界面のモデリング -SiO2/Siとの違い-
渡邉 孝信 [Invited]
Presentation date: 2009.06
Atomistic Picture of Silicon Oxidation Process; Beyond the Deal-Grove Model
WATANABE, Takanobu [Invited]
International Conference on Computational & Experimental Engineering and Sciences (ICCES’09)
Presentation date: 2009.04
2021 富田基裕, CHUNG, Sylvia Yuk Yee, Mahfuz Hasan, 片山 和明, 柏崎 翼, 黒崎 天彩美, 滝澤 諄弥, 保科 拓海, 山中 湧司, 詹 天卓
ダイヤモンド基板を用いた急峻温度勾配マイクロ熱電変換工学の開拓
2019 富田 基裕, 詹 天卓
ダイヤモンド基板上の非線形温度場による高出力熱電変換技術の創出
2018 富田 基裕, 詹 天卓
高熱伝導性基板上の非線形温度場による高出力熱電変換技術の創出
2018 富田 基裕, 詹 天卓
Modelling for Engineering A [S Grade]
School of Fundamental Science and Engineering
2022 spring semester
Basic Experiments in Science and Engineering 2A Denshibutsuri
School of Fundamental Science and Engineering
2022 spring semester
Introduction to Electronic and physical systems [S Grade]
School of Fundamental Science and Engineering
2022 spring semester
Introduction to Electronic and physical systems
School of Fundamental Science and Engineering
2022 spring semester
Electronic and Physical Systems Practice C [S Grade]
School of Fundamental Science and Engineering
2022 spring semester
Electronic and Physical Systems Practice C
School of Fundamental Science and Engineering
2022 spring semester
Special Seminar on Electronic and Physical Systems
School of Fundamental Science and Engineering
2022 fall semester
Electronic and Physical Systems Laboratory C [S Grade]
School of Fundamental Science and Engineering
2022 fall semester
Electronic and Physical Systems Laboratory C
School of Fundamental Science and Engineering
2022 fall semester
Electronic and Physical Systems Laboratory B [S Grade]
School of Fundamental Science and Engineering
2022 spring semester
Electronic and Physical Systems Laboratory B
School of Fundamental Science and Engineering
2022 spring semester
Electronic and Physical Systems Laboratory A [S Grade]
School of Fundamental Science and Engineering
2022 fall semester
Electronic and Physical Systems Laboratory A
School of Fundamental Science and Engineering
2022 fall semester
Introduction to Electronic and Physical Systems [S Grade]
School of Fundamental Science and Engineering
2022 an intensive course(spring)
Introduction to Electronic and Physical Systems
School of Fundamental Science and Engineering
2022 an intensive course(spring)
System Control and Machine Learning
School of Fundamental Science and Engineering
2022 spring semester
Master's Thesis (Department of Electronic and Physical Systems)
Graduate School of Fundamental Science and Engineering
2022 full year
Graduate School of Fundamental Science and Engineering
2022 an intensive course(fall)
Integrative Nano-Science and Nano-Engineering
Graduate School of Fundamental Science and Engineering
2022 spring semester
Seminar on Nano Materials Informatics D
Graduate School of Fundamental Science and Engineering
2022 fall semester
Seminar on Nano Materials Informatics C
Graduate School of Fundamental Science and Engineering
2022 spring semester
Seminar on Nano Materials Informatics B
Graduate School of Fundamental Science and Engineering
2022 fall semester
Seminar on Nano Materials Informatics A
Graduate School of Fundamental Science and Engineering
2022 spring semester
Introduction to Computational Experiment
Graduate School of Fundamental Science and Engineering
2022 fall semester
Research on Nano Materials Informatics
Graduate School of Fundamental Science and Engineering
2022 full year
Seminar on Nanomaterials for Informatics D
Graduate School of Fundamental Science and Engineering
2022 fall semester
Seminar on Nanomaterials for Informatics C
Graduate School of Fundamental Science and Engineering
2022 spring semester
Seminar on Nanomaterials for Informatics B
Graduate School of Fundamental Science and Engineering
2022 fall semester
Seminar on Nanomaterials for Informatics A
Graduate School of Fundamental Science and Engineering
2022 spring semester
Research on Nano Materials Informatics
Graduate School of Fundamental Science and Engineering
2022 full year
Master's Thesis (Department of Electronic and Physical Systems)
Graduate School of Fundamental Science and Engineering
2022 full year
Integrative Nano-Science and Nano-Engineering
Graduate School of Creative Science and Engineering
2022 spring semester
Research on Nano Materials Informatics
Graduate School of Fundamental Science and Engineering
2022 full year
Graduate School of Creative Science and Engineering
2022 an intensive course(fall)
Graduate School of Advanced Science and Engineering
2022 an intensive course(fall)
Master's Thesis (Department of Nanoscience and Nanoengineering)
Graduate School of Advanced Science and Engineering
2022 full year
Integrative Nano-Science and Nano-Engineering
Graduate School of Advanced Science and Engineering
2022 spring semester
Cluster-Seminar on Computational Sciences
Graduate School of Advanced Science and Engineering
2022 spring semester
Experiments in Nanoscience and Nanoengineering
Graduate School of Advanced Science and Engineering
2022 full year
Introduction to Computational Experiment
Graduate School of Advanced Science and Engineering
2022 fall semester
Integrative Nano-Science and Nano-Engineering
Graduate School of Advanced Science and Engineering
2022 spring semester
Research on Nanomaterials Informatics
Graduate School of Advanced Science and Engineering
2022 full year
Graduate School of Advanced Science and Engineering
2022 an intensive course(fall)
Master's Thesis (Department of Nanoscience and Nanoengineering)
Graduate School of Advanced Science and Engineering
2022 full year
Seminar on Nanomaterials for Informatics D
Graduate School of Advanced Science and Engineering
2022 fall semester
Seminar on Nanomaterials for Informatics C
Graduate School of Advanced Science and Engineering
2022 spring semester
Seminar on Nanomaterials for Informatics B
Graduate School of Advanced Science and Engineering
2022 fall semester
Seminar on Nanomaterials for Informatics A
Graduate School of Advanced Science and Engineering
2022 spring semester
Research on Nanomaterials Informatics
Graduate School of Advanced Science and Engineering
2022 full year
Seminar on Nanomaterials for Informatics D
Graduate School of Advanced Science and Engineering
2022 fall semester
Seminar on Nanomaterials for Informatics C
Graduate School of Advanced Science and Engineering
2022 spring semester
Seminar on Nanomaterials for Informatics B
Graduate School of Advanced Science and Engineering
2022 fall semester
Seminar on Nanomaterials for Informatics A
Graduate School of Advanced Science and Engineering
2022 spring semester
Experiments in Nanoscience and Nanoengineering
Graduate School of Advanced Science and Engineering
2022 full year
Research on Nanomaterials Informatics
Graduate School of Advanced Science and Engineering
2022 full year
Graduate School of Advanced Science and Engineering
2022 an intensive course(fall)
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早稲田大学
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早稲田大学
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早稲田大学
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早稲田大学