Updated on 2024/04/17

写真a

 
TANII, Takashi
 
Affiliation
Faculty of Science and Engineering, School of Fundamental Science and Engineering
Job title
Professor
Degree
Dr. of Eng. ( Waseda University )

Professional Memberships

  •  
     
     

    日本神経回路学会

  •  
     
     

    日本建築学会

  •  
     
     

    応用物理学会

  •  
     
     

    日本表面科学会

Research Areas

  • Nanobioscience

Research Interests

  • Nano-electronics, Nano-biotechnology

 

Papers

  • Detecting nuclear spins in an organosilane monolayer using nitrogen-vacancy centers for analysis of precursor self-assembly on diamond surface

    Yuki Ueda, Yuto Miyake, Akirabha Chanuntranont, Kazuki Otani, Masato Tsugawa, Daiki Saito, Shuntaro Usui, Tokuyuki Teraji, Shinobu Onoda, Takahiro Shinada, Hiroshi Kawarada, Takashi Tanii

    JAPANESE JOURNAL OF APPLIED PHYSICS   62 ( SG )  2023.06

     View Summary

    We demonstrated the correlation spectroscopy of organosilane monolayers using an ensemble of shallow nitrogen-vacancy centers as the quantum sensor. Several types of organosilane monolayers were grown directly on the diamond surface by exposing the surface to a silane precursor vapor. The feasibility of detecting H-1 and F-19 in the monolayer was examined by correlation spectroscopy measurements. The effect of the magnetic dipole-dipole interaction on the peak width was also discussed by comparing the spectrum of the monolayer with that of surface-attached H-1 and that of immersion oil. The results highlight the feasibility of nitrogen-vacancy centers as the spin probe for physicochemical analyses of monolayers grown on the diamond surface.

    DOI

    Scopus

  • Microfluidic cell engineering on high-density microelectrode arrays for assessing structure-function relationships in living neuronal networks

    Yuya Sato, Hideaki Yamamoto, Hideyuki Kato, Takashi Tanii, Shigeo Sato, Ayumi Hirano-Iwata

    arXiv preprint   2205   04342  2022.05

    DOI

  • Highly aligned 2D NV ensemble fabrication from nitrogen-terminated (111) surface

    Tetsuya Tatsuishi, Kyotaro Kanehisa, Taisuke Kageura, Takahiro Sonoda, Yuki Hata, Kazuto Kawakatsu, Takashi Tanii, Shinobu Onoda, Alastair Stacey, Shozo Kono, Hiroshi Kawarada

    CARBON   180   127 - 134  2021.08

     View Summary

    The nitrogen vacancy (NV) center in diamond is fascinating and has a long spin coherence time. It is applied to magnetic sensors with high sensitivity (similar to fT). To achieve a high sensitivity, an aligned NV ensemble is required. This paper presents a new methodology for the fabrication of two-dimensional (2D) aligned NV ensembles by using nitrogen-terminated (111) surface. To realize this, pure diamond growth and high nitrogen coverage on (111) surface were performed. As a result, we have succeeded in producing 2D NV ensembles, with 1 x 10(9) cm(-2). Coherence time T-2 was 2.45 mu s. Also, Using dynamical decoupling, the decoherence sources were revealed. The alignment ratio along [111] axis was archived 60%. Thermal annealing of the nitrogen termination was introduced to improve the alignment ratio. After that, the alignment rate was up to 73%. This report shows that the aligned 2D NV ensemble has possibility to be applied for multiple quantum devices. (C) 2021 Elsevier Ltd. All rights reserved.

    DOI

    Scopus

    4
    Citation
    (Scopus)
  • Selective Stimulation of a Target Neuron in Micropatterned Neuronal Circuits Using a Pair of Needle Electrodes

    Kouhei HATTORI, Hekiru KURAKAKE, Junko IMAI, Takuya HASHIMOTO, Mihoko ISHIDA, Koki SATO, Honoka TAKAHASHI, Soichiro OGUMA, Hideaki YAMAMOTO, Ayumi HIRANO-IWATA, Takashi TANII

    Electrochemistry   89 ( 4 ) 348 - 354  2021.07

    DOI

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  • Position‐Controlled Functionalization of Vacancies in Silicon by Single‐Ion Implanted Germanium Atoms

    Simona Achilli, Nguyen H. Le, Guido Fratesi, Nicola Manini, Giovanni Onida, Marco Turchetti, Giorgio Ferrari, Takahiro Shinada, Takashi Tanii, Enrico Prati

    Advanced Functional Materials   31 ( 21 ) 2011175 - 2011175  2021.05

    DOI

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    9
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  • Role of Noise in Spontaneous Activity of Networks of Neurons on Patterned Silicon Emulated by Noise--activated CMOS Neural Nanoelectronic Circuits

    Ramin Hasani, Giorgio Ferrari, Hideaki Yamamoto, Takashi Tanii, ENRICO PRATI

    Nano Express    2021.03

    DOI

  • Contribution of AMPA and NMDA receptors in the spontaneous firing patterns of single neurons in autaptic culture

    Kouhei Hattori, Takeshi Hayakawa, Akira Nakanishi, Mihoko Ishida, Hideaki Yamamoto, Ayumi Hirano-Iwata, Takashi Tanii

    Biosystems   198   104278 - 104278  2020.12  [Refereed]

    DOI

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    1
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  • Triple nitrogen-vacancy centre fabrication by C5N4Hn ion implantation

    Haruyama Moriyoshi, Onoda Shinobu, Higuchi Taisei, Kada Wataru, Chiba Atsuya, Hirano Yoshimi, Teraji Tokuyuki, Igarashi Ryuji, Kawai Sora, Kawarada Hiroshi, Ishii Yu, Fukuda Ryosuke, Tanii Takashi, Isoya Junichi, Ohshima Takeshi, Hanaizumi Osamu

    NATURE COMMUNICATIONS   10 ( 1 )  2019.06  [Refereed]

     View Summary

    Quantum information processing requires quantum registers based on coherently interacting quantum bits. The dipolar couplings between nitrogen vacancy (NV) centres with nanometre separation makes them a potential platform for room-temperature quantum registers. The fabrication of quantum registers that consist of NV centre arrays has not advanced beyond NV pairs for several years. Further scaling up of coupled NV centres by using nitrogen implantation through nanoholes has been hampered because the shortening of the separation distance is limited by the nanohole size and ion straggling. Here, we demonstrate the implantation of C5N4Hn from an adenine ion source to achieve further scaling. Because the C5N4Hn ion may be regarded as an ideal point source, the separation distance is solely determined by straggling. We successfully demonstrate the fabrication of strongly coupled triple NV centres. Our method may be extended to fabricate small quantum registers that can perform quantum information processing at room temperature.

    DOI PubMed

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    29
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  • Room Temperature Resonant Photocurrent in an Erbium Low-Doped Silicon Transistor at Telecom Wavelength

    Michele Celebrano, Lavinia Ghirardini, Marco Finazzi, Giorgio Ferrari, Yuki Chiba, Ayman Abdelghafar, Maasa Yano, Takahiro Shinada, Takashi Tanii, Enrico Prati

    Nanomaterials   9 ( 3 ) 416 - 416  2019.03

     View Summary

    An erbium-doped silicon transistor prepared by ion implantation and co-doped with oxygen is investigated by photocurrent generation in the telecommunication range. The photocurrent is explored at room temperature as a function of the wavelength by using a supercontinuum laser source working in the μW range. The 1-μm2 transistor is tuned to involve in the transport only those electrons lying in the Er-O states. The spectrally resolved photocurrent is characterized by the typical absorption line of erbium and the linear dependence of the signal over the impinging power demonstrates that the Er-doped transistor is operating far from saturation. The relatively small number of estimated photoexcited atoms (≈ 4 × 10 4 ) makes Er-dpoed silicon potentially suitable for designing resonance-based frequency selective single photon detectors at 1550 nm.

    DOI

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    9
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  • Lithographically engineered shallow nitrogen-vacancy centers in diamond for external nuclear spin sensing

    Ryosuke Fukuda, Priyadharshini Balasubramanian, Itaru Higashimata, Godai Koike, Takuma Okada, Risa Kagami, Tokuyuki Teraji, Shinobu Onoda, Moriyoshi Haruyama, Keisuke Yamada, Masafumi Inaba, Hayate Yamano, Felix M, ner, Simon Schmitt, Liam, P McGuinness, Fedor Jelezko, Takeshi Ohshima, Takahiro Shinada, Hiroshi Kawarada, Wataru Kada, Osamu Hanaizumi, Takashi Tanii, Junichi Isoya

    New Journal of Physics   20 ( 8 ) 083029  2018.08  [Refereed]

     View Summary

    The simultaneous control of the number and position of negatively charged nitrogen-vacancy (NV) centers in diamond was achieved. While single near-surface NV centers are known to exhibit outstanding capabilities in external spin sensing, trade-off relationships among the accuracy of the number and position, and the coherence of NV centers have made the use of such engineered NV centers difficult. Namely, low-energy nitrogen implantation with lithographic techniques enables the nanoscale position control but results in degradation of the creation yield and the coherence property. In this paper, we show that low-energy nitrogen ion implantation to a 12C (99.95%)-enriched homoepitaxial diamond layer using nanomask is applicable to create shallow NV centers with a sufficiently long coherence time for external spin sensing, at a high creation yield. Furthermore, the NV centers were arranged in a regular array so that 40% lattice sites contain single NV centers. The XY8-k measurements using the individual NV centers reveal that the created NV centers have depths from 2 to 12 nm, which is comparable to the stopping range of nitrogen ions implanted at 2.5 keV. We show that the position-controlled NV centers are capable of external spin sensing with a ultra-high spatial resolution.

    DOI

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    20
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  • In situ modification of cell-culture scaffolds by photocatalysis of visible-light-responsive TiO2 film

    Sho Kono, Kohei Furusawa, Atsushi Kurotobi, Kohei Hattori, Hideaki Yamamoto, Ayumi Hirano-Iwata, Takashi Tanii

    Japanese Journal of Applied Physics   57 ( 2 )  2018.02

     View Summary

    We propose a novel process to modify the cell affinity of scaffolds in a cell-culture environment using the photocatalytic activity of visible-light (VL)-responsive TiO2. The proposed process is the improved version of our previous demonstration in which ultraviolet (UV)-responsive TiO2 was utilized. In that demonstration, we showed that cell-repellent molecules on TiO2 were decomposed and replaced with cell-permissive molecules upon UV exposure in the medium where cells are being cultured. However, UV irradiation involves taking the risk of inducing damage to the cells. In this work, a TiO2 film was sputter-deposited on a quartz coverslip at 640 °C without O2 gas injection to create a rutile structure containing oxygen defects, which is known to exhibit photocatalytic activity upon VL exposure. We show that the cell adhesion site and migration area can be controlled with the photocatalytic activity of the VL-responsive TiO2 film, while the cellular oxidative stress is reduced markedly by the substitution of VL for UV.

    DOI

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    1
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  • Atom probe tomographic assessment of the distribution of germanium atoms implanted in a silicon matrix through nano-apertures

    Y. Tu, B. Han, Y. Shimizu, K. Inoue, Y. Fukui, M. Yano, T. Tanii, T. Shinada, Y. Nagai

    NANOTECHNOLOGY   28 ( 38 )  2017.09  [Refereed]

     View Summary

    Ion implantation through nanometer-scale apertures (nano-apertures) is a promising method to precisely position ions in silicon matrices, which is a requirement for next generation electronic and quantum computing devices. This paper reports the application of atom probe tomography (APT) to investigate the three-dimensional distribution of germanium atoms in silicon after implantation through nano-aperture of 10 nm in diameter, for evaluation of the amount and spatial distribution of implanted dopants. The experimental results obtained by APT are consistent with a simple simulation with consideration of several effects during lithography and ion implantation, such as channeling and resist flow.

    DOI

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    3
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  • 1.54 mu m photoluminescence from Er:O-x centers at extremely low concentration in silicon at 300 K

    Michele Celebrano, Lavinia Ghirardini, Marco Finazzi, Yasuo Shimizu, Yuan Tu, Koji Inoue, Yasuyoshi Nagai, Takahiro Shinada, Yuki Chiba, Ayman Abdelghafar, Maasa Yano, Takashi Tanii, Enrico Prati

    OPTICS LETTERS   42 ( 17 ) 3311 - 3314  2017.09  [Refereed]

     View Summary

    The demand for single photon emitters at lambda = 1.54 mu m, which follows from the consistent development of quantum networks based on optical fiber technologies, makes Er: O-x centers in Si a viable resource, thanks to the I-4(13/2) -> I-4(15/2) optical transition of Er3+. While its implementation in high-power applications is hindered by the extremely low emission rate, the study of such systems in the low concentration regime remains relevant for quantum technologies. In this Letter, we explore the room-temperature photoluminescence at the telecomm wavelength from very low implantation doses of Er:O-x in Si. The lower-bound number of optically active Er atoms detected is of the order of 10(2), corresponding to a higher-bound value for the emission rate per individual ion of about 10(4) s(-1). (C) 2017 Optical Society of America

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    10
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  • Revisiting room-temperature 1.54 μm photoluminescence of ErOx centers in silicon at extremely low concentration

    E. Prati, M. Celebrano, L. Ghirardini, P. Biagioni, M. Finazzi, Y. Shimizu, Y. Tu, K. Inoue, Y. Nagai, T. Shinada, Y. Chiba, A. Abdelghafar, M. Yano, T. Tanii

    Proceedings of 2017 Silicon Nanoelectronics Workshop (SNW)     105 - 106  2017.06

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    4
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  • Atom probe study of erbium and oxygen co-implanted silicon

    Y. Shimizu, Y. Tu, A. Abdelghafar, M. Yano, Y. Suzuki, T. Tanii, T. Shinada, E. Prati, M. Celebrano, M. Finazzi, L. Ghirardini, K. Inoue, Y. Nagai

    Proceedings of 2017 Silicon Nanoelectronics Workshop (SNW)     99 - 100  2017.06

    DOI

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    6
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  • Effect of a radical exposure nitridation surface on the charge stability of shallow nitrogen-vacancy centers in diamond

    Taisuke Kageura, Kanami Kato, Hayate Yamano, Evi Suaebah, Miki Kajiya, Sora Kawai, Masafumi Inaba, Takashi Tanii, Moriyoshi Haruyama, Keisuke Yamada, Shinobu Onoda, Wataru Kada, Osamu Hanaizumi, Tokuyuki Teraji, Junichi Isoya, Shozo Kono, Hiroshi Kawarada

    APPLIED PHYSICS EXPRESS   10 ( 5 )  2017.05  [Refereed]

     View Summary

    A nitridation process of a diamond surface with nitrogen radical exposure far from the radio-frequency plasma for the stabilization of a negatively charged nitrogen-vacancy (NV%) centers near the surface is presented. At a nitrogen coverage of as high as 0.9 monolayers, high average Rabi contrasts of 0.40 +/- 0.06 and 0.46 +/- 0.03 have been obtained for single NV% centers formed by shallow nitrogen implantation with acceleration voltages of 1 and 2 keV, respectively. This indicates that nitrogen termination by a radical exposure process produces an electric charge state suitable for single NV- centers near the surface compared with the states obtained for alternatively terminated surfaces. (C) 2017 The Japan Society of Applied Physics

    DOI

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    26
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  • Charge state stabilization of shallow nitrogen vacancy centers in diamond by oxygen surface modification

    Hayate Yamano, Sora Kawai, Kanami Kato, Taisuke Kageura, Masafumi Inaba, Takuma Okada, Itaru Higashimata, Moriyoshi Haruyama, Takashi Tanii, Keisuke Yamada, Shinobu Onoda, Wataru Kada, Osamu Hanaizumi, Tokuyuki Teraji, Junichi Isoya, Hiroshi Kawarada

    Japanese Journal of Applied Physics   56 ( 4 )  2017.04

     View Summary

    We investigated the charge state stability and coherence properties of near-surface single nitrogen vacancy (NV) centers in 12C-enriched diamond for potential use in nanoscale magnetic field sensing applications. The stability of charge states in negatively charged NV centers (NV-) was evaluated using one of the pulsed optically detected magnetic resonance measurements, Rabi oscillation measurements. During the accumulation of Rabi oscillations, an unstable shallow NV- was converted to a neutral state. As a result, the contrast of Rabi oscillations degraded, depending on charge state stability. We stabilized the NV- state of very shallow NV centers (∼2.6 ± 1.1nm from the surface) created by 1.2 keV nitrogen ion implantation by diamond surface modification, UV/ozone exposure, and oxygen annealing. This improvement indicates that we can suppress the upward surface band bending and surface potential fluctuations through Fermi level pinning originating from oxygen-terminated diamond surfaces.

    DOI

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    49
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  • Effect of a radical exposure nitridation surface on the charge stability of shallow nitrogen-vacancy centers in diamond

    Kageura Taisuke, Kato Kanami, Yamano Hayate, Suaebah Evi, Kajiya Miki, Kawai Sora, Inaba Masafumi, Tanii Takashi, Haruyama Moriyoshi, Yamada Keisuke, Onoda Shinobu, Kada Wataru, Hanaizumi Osamu, Teraji Tokuyuki, Isoya Junichi, Kono Shozo, Kawarada Hiroshi

    Appl. Phys. Express   10 ( 5 )  2017.04

     View Summary

    A nitridation process of a diamond surface with nitrogen radical exposure far from the radio-frequency plasma for the stabilization of a negatively charged nitrogen-vacancy (NV) centers near the surface is presented. At a nitrogen coverage of as high as 0.9 monolayers, high average Rabi contrasts of 0.40 ± 0.06 and 0.46 ± 0.03 have been obtained for single NVcenters formed by shallow nitrogen implantation with acceleration voltages of 1 and 2 keV, respectively. This indicates that nitrogen termination by a radical exposure process produces an electric charge state suitable for single NVcenters near the surface compared with the states obtained for alternatively terminated surfaces.

    CiNii

  • Charge state stabilization of shallow nitrogen vacancy centers in diamond by oxygen surface modification

    Yamano Hayate, Kawai Sora, Kato Kanami, Kageura Taisuke, Inaba Masafumi, Okada Takuma, Higashimata Itaru, Haruyama Moriyoshi, Tanii Takashi, Yamada Keisuke, Onoda Shinobu, Kada Wataru, Hanaizumi Osamu, Teraji Tokuyuki, Isoya Junichi, Kawarada Hiroshi

    Jpn. J. Appl. Phys.   56 ( 4 ) 04CK08  2017.03

     View Summary

    We investigated the charge state stability and coherence properties of near-surface single nitrogen vacancy (NV) centers in 12C-enriched diamond for potential use in nanoscale magnetic field sensing applications. The stability of charge states in negatively charged NV centers (NV) was evaluated using one of the pulsed optically detected magnetic resonance measurements, Rabi oscillation measurements. During the accumulation of Rabi oscillations, an unstable shallow NVwas converted to a neutral state. As a result, the contrast of Rabi oscillations degraded, depending on charge state stability. We stabilized the NVstate of very shallow NV centers (∼2.6 ± 1.1 nm from the surface) created by 1.2 keV nitrogen ion implantation by diamond surface modification, UV/ozone exposure, and oxygen annealing. This improvement indicates that we can suppress the upward surface band bending and surface potential fluctuations through Fermi level pinning originating from oxygen-terminated diamond surfaces.

    DOI CiNii

    Scopus

    49
    Citation
    (Scopus)
  • Control of the correlation of spontaneous neuron activity in biological and noise-activated CMOS artificial neural microcircuits.

    Hasani RM, Ferrari G, Yamamoto H, Kono S, Ishihara K, Fujimori S, Tanii T, Prati E

    arXiv     1702.07426  2017.02

  • In situ modification of cell-culture scaffold by photocatalysis of visible-light-responsive TiO2 film

    Kono Sho, Kurotobi Atsushi, hatto kohei, Yamamoto Hideaki, Hirano-Iwata Ayumi, Tanii Takashi

    Abstract of annual meeting of the Surface Science of Japan   37 ( 0 )  2017

    CiNii

  • Fabrication of micropatterned surface for cancer cell sorting

    Wakabayashi Hikaru, Takeuchi Yuko, Tanaka Manabu, Tanii Takashi

    Abstract of annual meeting of the Surface Science of Japan   37 ( 0 )  2017

    CiNii

  • Identification of yield drift deformations and evaluation of the degree of damage through the direct sensing of drift displacements

    Ping Xiang, Akira Nishitani, Shohei Marutani, Kenzo Kodera, Tomohiko Hatada, Ryuta Katamura, Kiyoshi Kanekawa, Takashi Tanii

    EARTHQUAKE ENGINEERING & STRUCTURAL DYNAMICS   45 ( 13 ) 2085 - 2102  2016.10  [Refereed]

     View Summary

    Inter-story drift displacement data can provide useful information for story damage assessment. The authors' research group has developed photonic-based sensors for the direct measurement of inter-story drift displacements. This paper proposes a scheme for evaluating the degree of damage in a building structure based on drift displacement sensing. The scheme requires only measured inter-story drift displacements without any additional finite element analysis. A method for estimating yield drift deformation is proposed, and then, the degree of beam end damage is evaluated based on the plastic deformation ratios derived with the yield drift deformation values estimated by the proposed method. The validity and effectiveness of the presented scheme are demonstrated via experimental data from a large-scale shaking table test of a one-third-scale model of an 18-story steel building structure conducted at E-Defense. Copyright (C) 2016 John Wiley & Sons, Ltd.

    DOI

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    19
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  • Identification of yield drift deformations and evaluation of the degree of damage through the direct sensing of drift displacements

    Ping Xiang, Akira Nishitani, Shohei Marutani, Kenzo Kodera, Tomohiko Hatada, Ryuta Katamura, Kiyoshi Kanekawa, Takashi Tanii

    EARTHQUAKE ENGINEERING & STRUCTURAL DYNAMICS   45 ( 13 ) 2085 - 2102  2016.10  [Refereed]

     View Summary

    Inter-story drift displacement data can provide useful information for story damage assessment. The authors' research group has developed photonic-based sensors for the direct measurement of inter-story drift displacements. This paper proposes a scheme for evaluating the degree of damage in a building structure based on drift displacement sensing. The scheme requires only measured inter-story drift displacements without any additional finite element analysis. A method for estimating yield drift deformation is proposed, and then, the degree of beam end damage is evaluated based on the plastic deformation ratios derived with the yield drift deformation values estimated by the proposed method. The validity and effectiveness of the presented scheme are demonstrated via experimental data from a large-scale shaking table test of a one-third-scale model of an 18-story steel building structure conducted at E-Defense. Copyright (C) 2016 John Wiley & Sons, Ltd.

    DOI

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    19
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  • Quantitative comparison of cancer and normal cell adhesion using organosilane monolayer templates: an experimental study on the anti-adhesion effect of green-tea catechins.

    Rumi Sakamoto, Eisuke Kakinuma, Kentaro Masuda, Yuko Takeuchi, Kosaku Ito, Kentaro Iketaki, Takahisa Matsuzaki, Seiichiro Nakabayashi, Hiroshi Y Yoshikawa, Hideaki Yamamoto, Yuko Sato, Takashi Tanii

    In vitro cellular & developmental biology. Animal   52 ( 8 ) 799 - 805  2016.09  [Refereed]  [International journal]

     View Summary

    The main constituent of green tea, (-)-Epigallocatechin-3-O-gallate (EGCG), is known to have cancer-specific chemopreventive effects. In the present work, we investigated how EGCG suppresses cell adhesion by comparing the adhesion of human pancreatic cancer cells (AsPC-1 and BxPC-3) and their counterpart, normal human embryonic pancreas-derived cells (1C3D3), in catechin-containing media using organosilane monolayer templates (OMTs). The purpose of this work is (1) to evaluate the quantitativeness in the measurement of cell adhesion with the OMT and (2) to show how green-tea catechins suppress cell adhesion in a cancer-specific manner. For the first purpose, the adhesion of cancer and normal cells was compared using the OMT. The cell adhesion in different type of catechins such as EGCG, (-)-Epicatechin-3-O-gallate (ECG) and (-)-Epicatechin (EC) was also evaluated. The measurements revealed that the anti-adhesion effect of green-tea catechins is cancer-specific, and the order is EGCG≫ECG>EC. The results agree well with the data reported to date, showing the quantitativeness of the new method. For the second purpose, the contact area of cells on the OMT was measured by reflection interference contrast microscopy. The cell-OMT contact area of cancer cells decreases with increasing EGCG concentration, whereas that of normal cells remains constant. The results reveal a twofold action of EGCG on cancer cell adhesion-suppressing cell attachment to a candidate adhesion site and decreasing the contact area of the cells-and validates the use of OMT as a tool for screening cancer cell adhesion.

    DOI PubMed

    Scopus

    3
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  • Quantitative comparison of cancer and normal cell adhesion using organosilane monolayer templates: an experimental study on the anti-adhesion effect of green-tea catechins.

    Rumi Sakamoto, Eisuke Kakinuma, Kentaro Masuda, Yuko Takeuchi, Kosaku Ito, Kentaro Iketaki, Takahisa Matsuzaki, Seiichiro Nakabayashi, Hiroshi Y Yoshikawa, Hideaki Yamamoto, Yuko Sato, Takashi Tanii

    In vitro cellular & developmental biology. Animal   52 ( 8 ) 799 - 805  2016.09  [International journal]

     View Summary

    The main constituent of green tea, (-)-Epigallocatechin-3-O-gallate (EGCG), is known to have cancer-specific chemopreventive effects. In the present work, we investigated how EGCG suppresses cell adhesion by comparing the adhesion of human pancreatic cancer cells (AsPC-1 and BxPC-3) and their counterpart, normal human embryonic pancreas-derived cells (1C3D3), in catechin-containing media using organosilane monolayer templates (OMTs). The purpose of this work is (1) to evaluate the quantitativeness in the measurement of cell adhesion with the OMT and (2) to show how green-tea catechins suppress cell adhesion in a cancer-specific manner. For the first purpose, the adhesion of cancer and normal cells was compared using the OMT. The cell adhesion in different type of catechins such as EGCG, (-)-Epicatechin-3-O-gallate (ECG) and (-)-Epicatechin (EC) was also evaluated. The measurements revealed that the anti-adhesion effect of green-tea catechins is cancer-specific, and the order is EGCG≫ECG>EC. The results agree well with the data reported to date, showing the quantitativeness of the new method. For the second purpose, the contact area of cells on the OMT was measured by reflection interference contrast microscopy. The cell-OMT contact area of cancer cells decreases with increasing EGCG concentration, whereas that of normal cells remains constant. The results reveal a twofold action of EGCG on cancer cell adhesion-suppressing cell attachment to a candidate adhesion site and decreasing the contact area of the cells-and validates the use of OMT as a tool for screening cancer cell adhesion.

    DOI PubMed

    Scopus

    3
    Citation
    (Scopus)
  • Live-Cell, Label-Free Identification of GABAergic and Non-GABAergic Neurons in Primary Cortical Cultures Using Micropatterned Surface

    Sho Kono, Hideaki Yamamoto, Takatoshi Kushida, Ayumi Hirano-Iwata, Michio Niwano, Takashi Tanii

    PLOS ONE   11 ( 8 )  2016.08  [Refereed]

     View Summary

    Excitatory and inhibitory neurons have distinct roles in cortical dynamics. Here we present a novel method for identifying inhibitory GABAergic neurons from non-GABAergic neurons, which are mostly excitatory glutamatergic neurons, in primary cortical cultures. This was achieved using an asymmetrically designed micropattern that directs an axonal process to the longest pathway. In the current work, we first modified the micropattern geometry to improve cell viability and then studied the axon length from 2 to 7 days in vitro (DIV). The cell types of neurons were evaluated retrospectively based on immunoreactivity against GAD67, a marker for inhibitory GABAergic neurons. We found that axons of non-GABAergic neurons grow significantly longer than those of GABAergic neurons in the early stages of development. The optimal threshold for identifying GABAergic and non-GABAergic neurons was evaluated to be 110 mu m at 6 DIV. The method does not require any fluorescence labelling and can be carried out on live cells. The accuracy of identification was 98.2%. We confirmed that the high accuracy was due to the use of a micropattern, which standardized the development of cultured neurons. The method promises to be beneficial both for engineering neuronal networks in vitro and for basic cellular neuroscience research.

    DOI

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    6
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  • Size-dependent regulation of synchronized activity in living neuronal networks

    Hideaki Yamamoto, Shigeru Kubota, Yudai Chida, Mayu Morita, Satoshi Moriya, Hisanao Akima, Shigeo Sato, Ayumi Hirano-Iwata, Takashi Tanii, Michio Niwano

    PHYSICAL REVIEW E   94 ( 1 )  2016.07  [Refereed]

     View Summary

    We study the effect of network size on synchronized activity in living neuronal networks. Dissociated cortical neurons form synaptic connections in culture and generate synchronized spontaneous activity within 10 days in vitro. Using micropatterned surfaces to extrinsically control the size of neuronal networks, we show that synchronized activity can emerge in a network as small as 12 cells. Furthermore, a detailed comparison of small (similar to 20 cells), medium (similar to 100 cells), and large (similar to 400 cells) networks reveal that synchronized activity becomes destabilized in the small networks. A computational modeling of neural activity is then employed to explore the underlying mechanism responsible for the size effect. We find that the generation and maintenance of the synchronized activity can be minimally described by: (1) the stochastic firing of each neuron in the network, (2) enhancement in the network activity in a positive feedback loop of excitatory synapses, and (3) Ca-dependent suppression of bursting activity. The model further shows that the decrease in total synaptic input to a neuron that drives the positive feedback amplification of correlated activity is a key factor underlying the destabilization of synchrony in smaller networks. Spontaneous neural activity plays a critical role in cortical information processing, and our work constructively clarifies an aspect of the structural basis behind this.

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    19
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  • Size-dependent regulation of synchronized activity in living neuronal networks

    Yamamoto, Hideaki, Kubota, Shigeru, Chida, Yudai, Morita, Mayu, Moriya, Satoshi, Akima, Hisanao, Sato, Shigeo, Hirano-Iwata, Ayumi, Tanii, Takashi, Niwano, Michio

    Physical Review E - Statistical, Nonlinear, and Soft Matter Physics   94 ( 1 )  2016.07

     View Summary

    © 2016 American Physical Society.We study the effect of network size on synchronized activity in living neuronal networks. Dissociated cortical neurons form synaptic connections in culture and generate synchronized spontaneous activity within 10 days in vitro. Using micropatterned surfaces to extrinsically control the size of neuronal networks, we show that synchronized activity can emerge in a network as small as 12 cells. Furthermore, a detailed comparison of small (∼20 cells), medium (∼100 cells), and large (∼400 cells) networks reveal that synchronized activity becomes destabilized in the small networks. A computational modeling of neural activity is then employed to explore the underlying mechanism responsible for the size effect. We find that the generation and maintenance of the synchronized activity can be minimally described by: (1) the stochastic firing of each neuron in the network, (2) enhancement in the network activity in a positive feedback loop of excitatory synapses, and (3) Ca-dependent suppression of bursting activity. The model further shows that the decrease in total synaptic input to a neuron that drives the positive feedback amplification of correlated activity is a key factor underlying the destabilization of synchrony in smaller networks. Spontaneous neural activity plays a critical role in cortical information processing, and our work constructively clarifies an aspect of the structural basis behind this.

    DOI

    Scopus

    19
    Citation
    (Scopus)
  • Quantitative Evaluation of Cancer Cell Adhesion to Self-Assembled Monolayer-Patterned Substrates by Reflection Interference Contrast Microscopy

    Takahisa Matsuzaki, Kosaku Ito, Kentaro Masuda, Eisuke Kakinuma, Rumi Sakamoto, Kentaro Iketaki, Hideaki Yamamoto, Masami Suganuma, Naritaka Kobayashi, Seiichiro Nakabayashi, Takashi Tanii, Hiroshi Y. Yoshikawa

    JOURNAL OF PHYSICAL CHEMISTRY B   120 ( 7 ) 1221 - 1227  2016.02  [Refereed]

     View Summary

    Adhesion of cancer cells with different metastatic potential and anticancer drug resistance has been quantitatively evaluated by using self-assembled monolayer (SAM)-patterned substrates and reflection interference contrast microscopy (RICM). Cell-adhesive SAM spots with optimized diameter could prevent cell cell adhesion and thus allowed the systematic evaluation of statistically reliable numbers of contact area between single cancer cells and substrates by RICM. The statistical image analysis revealed that highly metastatic mouse melanoma cells showed larger contact area than lowly metastatic cells. We also found that both cancer cell types exhibited distinct transition from the "strong" to "weak" adhesion states with increase in the concentration of (-)-epigallo-catechin gallate (EGCG), which is known to exhibit cancer preventive activity. Mathematical analysis of the adhesion transition revealed that adhesion of the highly metastatic mouse melanoma cells showed more EGCG tolerance than that of lowly metastatic cells. Moreover, time-lapse RICM observation revealed that EGCG weakened cancer cell adhesion in a stepwise manner, probably via focal adhesion complex. These results clearly indicate that contact area can be used as a quantitative measure for the determination of cancer phenotypes and their drug resistance, which will provide physical insights into the mechanism of cancer metastasis and cancer prevention.

    DOI

    Scopus

    11
    Citation
    (Scopus)
  • 21aBK-4 Current Status of Creation Technique of Color Centers in Diamonds by Quantum Beams

    Onoda S, Haruyama M, Teraji T, Isoya J, Koike G, Higashimata I, Inaba M, Yamano K, Kato K, Muller Christoph, McGuinness Liam, Balasubramanian Priyadharshini, Naydenov Boris, Jelezko Fedor, Sato S.-i, Ohshima T, Kada W, Hanaizumi O, Tanii T, Kawarada H

    Meeting Abstracts of the Physical Society of Japan   71 ( 0 ) 725 - 726  2016

    DOI CiNii

  • Modification of Cell-Substrate Interface Using TiO2 Photocatalysis

    YAMAMOTO Hideaki, HIRANO-IWATA Ayumi, TANII Takashi, NIWANO Michio

    Hyomen Kagaku   37 ( 5 ) 224 - 229  2016

     View Summary

    Dissociated neurons form a uniform network in culture that covers the whole coverslip. The number of neurons in the network and extent of their axon/dendrite elaboration can be controlled by using micropatterned surfaces as growth scaffolds. "Defined" neuronal networks thus fabricated make it possible to study how structure of a network correlates with its functional properties. We first describe surface micropatterning techniques can be used to make an array of neurons and to direct axon-dendrite polarity of each cell. To create functional networks, the isolated neurons must subsequently be interconnected. To accomplish this, the cell-repellent domain between individual neurons needs to be altered from cell-repellent to cell-permissive in the culture medium, so that the neurons would be hard-wired. We developed for this purpose a novel surface modification method using titanium dioxide photocatalysis.

    CiNii

  • 21aBK-4 Current Status of Creation Technique of Color Centers in Diamonds by Quantum Beams

    Onoda S, Haruyama M, Teraji T, Isoya J, Koike G, Higashimata I, Inaba M, Yamano K, Kato K, Muller Christoph, McGuinness Liam, Balasubramanian Priyadharshini, Naydenov Boris, Jelezko Fedor, Sato S.-i, Ohshima T, Kada W, Hanaizumi O, Tanii T, Kawarada H

    Meeting Abstracts of the Physical Society of Japan   71 ( 0 ) 725 - 726  2016

    DOI CiNii

  • Neuraminidase-Dependent Degradation of Polysialic Acid Is Required for the Lamination of Newly Generated Neurons

    Mari Sajo, Hiroki Sugiyama, Hideaki Yamamoto, Takashi Tanii, Norio Matsuki, Yuji Ikegaya, Ryuta Koyama

    PLOS ONE   11 ( 1 )  2016.01  [Refereed]

     View Summary

    Hippocampal granule cells (GCs) are generated throughout the lifetime and are properly incorporated into the innermost region of the granule cell layer (GCL). Hypotheses for the well-regulated lamination of newly generated GCs suggest that polysialic acid (PSA) is present on the GC surface to modulate GC-to-GC interactions, regulating the process of GC migration; however, direct evidence of this involvement is lacking. We show that PSA facilitates the migration of newly generated GCs and that the activity of N-acetyl-a-neuraminidase 1 (NEU1, sialidase 1) cleaves PSA from immature GCs, terminating their migration in the innermost GCL. Developing a migration assay of immature GCs in vitro, we found that the pharmacological depletion of PSA prevents the migration of GCs, whereas the inhibition of PSA degradation with a neuraminidase inhibitor accelerates this migration. We found that NEU1 is highly expressed in immature GCs. The knockdown of NEU1 in newly generated GCs in vivo increased PSA presence on these cells, and attenuated the proper termination of GC migration in the innermost GCL. In conclusion, this study identifies a novel mechanism that underlies the proper lamination of newly generated GCs through the modulation of PSA presence by neuronal NEU1.

    DOI

    Scopus

    13
    Citation
    (Scopus)
  • Deterministic doping to silicon and diamond materials for quantum processing

    Takahiro Shinada, Enrico Prati, Takashi Tanii, Tokuyuki Teraji, Shinobu Onoda, Fedor Jelezko, Junnichi Isoya

    2016 IEEE 16TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO)     888 - 890  2016  [Refereed]

     View Summary

    Nanoscale electronic devices will require the placement of dopants in a predetermined location, namely, a single atom control to explore novel functions for future nanoelectronics. Deterministic doping method, i.e. single-ion implantation, realizes ordered arrays of single-atoms in silicon, diamond and other materials, which might provide opportunities to single-dopant transport or single-photon source beneficial to quantum processing.

    DOI

    Scopus

    2
    Citation
    (Scopus)
  • Investigation of the silicon vacancy color center for quantum key distribution

    Yan Liu, Petr Siyushev, Youying Rong, Botao Wu, Liam Paul McGuinness, Fedor Jelezko, Syuto Tamura, Takashi Tanii, Tokuyuki Teraji, Shinobu Onoda, Takeshi Ohshima, Junichi Isoya, Takahiro Shinada, Heping Zeng, E. Wu

    OPTICS EXPRESS   23 ( 26 ) 32961 - 32967  2015.12  [Refereed]

     View Summary

    Single photon sources (SPS) are crucial for quantum key distribution. Here we demonstrate a stable triggered SPS at 738 nm with linewidth less than 5 nm at room temperature based on a negatively charged single silicon vacancy color center. Thanks to the short photon duration of about 1.3-1.7 ns, by using high repetition pulsed excitation at 30 MHz, the triggered single photon source generates 16.6 kcounts/s. And we discuss the feasibility of this triggered SPS in the application of quantum key distribution. (C) 2015 Optical Society of America

    DOI

    Scopus

    10
    Citation
    (Scopus)
  • Photopatterning Proteins and Cells in Aqueous Environment Using TiO2 Photocatalysis

    Hideaki Yamamoto, Takanori Demura, Kohei Sekine, Sho Kono, Michio Niwano, Ayumi Hirano-Iwata, Takashi Tanii

    JOVE-JOURNAL OF VISUALIZED EXPERIMENTS   2015 ( 104 )  2015.10  [Refereed]

     View Summary

    Organic contaminants adsorbed on the surface of titanium dioxide (TiO2) can be decomposed by photocatalysis under ultraviolet (UV) light. Here we describe a novel protocol employing the TiO2 photocatalysis to locally alter cell affinity of the substrate surface. For this experiment, a thin TiO2 film was sputter-coated on a glass coverslip, and the TiO2 surface was subsequently modified with an organosilane monolayer derived from octadecyltrichlorosilane (OTS), which inhibits cell adhesion. The sample was immersed in a cell culture medium, and focused UV light was irradiated to an octagonal region. When a neuronal cell line PC12 cells were plated on the sample, cells adhered only on the UV-irradiated area. We further show that this surface modification can also be performed in situ, i.e., even when cells are growing on the substrate. Proper modification of the surface required an extracellular matrix protein collagen to be present in the medium at the time of UV irradiation. The technique presented here can potentially be employed in patterning multiple cell types for constructing coculture systems or to arbitrarily manipulate cells under culture.

    DOI

    Scopus

    2
    Citation
    (Scopus)
  • 21473 Verification of Damage Monitoring System based on Measurement of Relative Story Displacements in E-Defense Shaking Table Test of High-rise Steel Building : Part-4 Measurement of Local Rotation Angle

    KOMURO Masaharu, HATADA Tomohiko, KATAMURA Ryuta, NISHITANI Akira, TANII Takashi

    Summaries of technical papers of annual meeting   2015 ( 0 ) 945 - 946  2015.09

    CiNii

  • 21472 Verification of Damage Monitoring System based on Measurement of Relative Story Displacements in E-Defense Shaking Table Test of High-rise Steel Building : Part-3 Verification of Damage Evaluation Method

    HATADA Tomohiko, KATAMURA Ryuta, HAGIWARA Hajime, TANII Takashi, NITTA Yoshihiro, NISHITANI Akira

    Summaries of technical papers of annual meeting   2015 ( 0 ) 943 - 944  2015.09

    CiNii

  • Fluorescence Polarization Switching from a Single Silicon Vacancy Colour Centre in Diamond

    Yan Liu, Gengxu Chen, Youying Rong, Liam Paul McGuinness, Fedor Jelezko, Syuto Tamura, Takashi Tanii, Tokuyuki Teraji, Shinobu Onoda, Takeshi Ohshima, Junichi Isoya, Takahiro Shinada, E. Wu, Heping Zeng

    SCIENTIFIC REPORTS   5  2015.07

     View Summary

    Single-photon emitters with stable and uniform photoluminescence properties are important for quantum technology. However, in many cases, colour centres in diamond exhibit spectral diffusion and photoluminescence intensity fluctuation. It is therefore essential to investigate the dynamics of colour centres at the single defect level in order to enable the on-demand manipulation and improved applications in quantum technology. Here we report the polarization switching, intensity jumps and spectral shifting observed on a negatively charged single silicon-vacancy colour centre in diamond. The observed phenomena elucidate the single emitter dynamics induced by photoionization of nearby electron donors in the diamond.

    DOI PubMed

    Scopus

    9
    Citation
    (Scopus)
  • Fluorescence Polarization Switching from a Single Silicon Vacancy Colour Centre in Diamond

    Yan Liu, Gengxu Chen, Youying Rong, Liam Paul McGuinness, Fedor Jelezko, Syuto Tamura, Takashi Tanii, Tokuyuki Teraji, Shinobu Onoda, Takeshi Ohshima, Junichi Isoya, Takahiro Shinada, E. Wu, Heping Zeng

    SCIENTIFIC REPORTS   5  2015.07  [Refereed]

     View Summary

    Single-photon emitters with stable and uniform photoluminescence properties are important for quantum technology. However, in many cases, colour centres in diamond exhibit spectral diffusion and photoluminescence intensity fluctuation. It is therefore essential to investigate the dynamics of colour centres at the single defect level in order to enable the on-demand manipulation and improved applications in quantum technology. Here we report the polarization switching, intensity jumps and spectral shifting observed on a negatively charged single silicon-vacancy colour centre in diamond. The observed phenomena elucidate the single emitter dynamics induced by photoionization of nearby electron donors in the diamond.

    DOI

    Scopus

    9
    Citation
    (Scopus)
  • Fluorescence Polarization Switching from a Single Silicon Vacancy Colour Centre in Diamond

    Yan Liu, Gengxu Chen, Youying Rong, Liam Paul McGuinness, Fedor Jelezko, Syuto Tamura, Takashi Tanii, Tokuyuki Teraji, Shinobu Onoda, Takeshi Ohshima, Junichi Isoya, Takahiro Shinada, E. Wu, Heping Zeng

    SCIENTIFIC REPORTS   5  2015.07  [Refereed]

     View Summary

    Single-photon emitters with stable and uniform photoluminescence properties are important for quantum technology. However, in many cases, colour centres in diamond exhibit spectral diffusion and photoluminescence intensity fluctuation. It is therefore essential to investigate the dynamics of colour centres at the single defect level in order to enable the on-demand manipulation and improved applications in quantum technology. Here we report the polarization switching, intensity jumps and spectral shifting observed on a negatively charged single silicon-vacancy colour centre in diamond. The observed phenomena elucidate the single emitter dynamics induced by photoionization of nearby electron donors in the diamond.

    DOI

    Scopus

    9
    Citation
    (Scopus)
  • Drift displacement data based estimation of cumulative plastic deformation ratios for buildings

    Akira Nishitani, Chisa Matsui, Yushiro Hara, Ping Xiang, Yoshihiro Nitta, Tomohiko Hatada, Ryota Katamura, Iwao Matsuya, Takashi Tanii

    SMART STRUCTURES AND SYSTEMS   15 ( 3 ) 881 - 896  2015.03  [Refereed]

     View Summary

    The authors' research group has developed a noncontact type of sensors which directly measure the inter-story drift displacements of a building during a seismic event. Soon after that event, such seismically-induced drift displacement data would provide structural engineers with useful information to judge how the stories have been damaged. This paper presents a scheme of estimating the story cumulative plastic deformation ratios based on such measured drift displacement information toward the building safety monitoring. The presented scheme requires the data of story drift displacements and the ground motion acceleration. The involved calculations are rather simple without any detailed information on structural elements required: the story hysteresis loops are first estimated and then the cumulative plastic deformation ratio of each story is evaluated from the estimated hysteresis. The effectiveness of the scheme is demonstrated by utilizing the data of full-scale building model experiment performed at E-defense and conducting numerical simulations.

  • Surface micromodification techniques for engineering cultured neurons and neuronal networks

    Yamamoto Hideaki, Hirano-Iwata Ayumi, Tanii Takashi, Niwano Michio

    Abstract of annual meeting of the Surface Science of Japan   35   21 - 21  2015

    DOI CiNii

  • Single ion implantation of Ge donor impurity in silicon transistors

    E. Prati, Y. Chiba, M. Yano, K. Kumagai, M. Hori, G. Ferrari, T. Shinada, T. Tanii

    2015 SILICON NANOELECTRONICS WORKSHOP (SNW)    2015  [Refereed]

     View Summary

    Ge impurities in silicon generate deep donor states in the silicon bandgap. We demonstrate the single ion implantation of Ge ions in the channel of silicon transisteas and their electrical activation. Because of the deep donor ground state of Ge, we realize room temperature impurity bands. Our method enables us to create atomic scale conductive paths in silicon with no need of external gate voltages.

  • Surface modification of cell scaffold in aqueous solution using TiO<inf>2</inf> photocatalysis and linker protein L2 for patterning primary neurons

    Kohei Sekine, Hideaki Yamamoto, Sho Kono, Takeshi Ikeda, Akio Kuroda, Takashi Tanii

    e-Journal of Surface Science and Nanotechnology   13 ( 0 ) 213 - 218  2015

     View Summary

    Titanium dioxide (TiO&lt
    inf&gt
    2&lt
    /inf&gt
    ) photocatalysis can be applied to pattern proteins and cells under aqueous solution. In this work, we extended the application of this technique to patterning primary neurons, a type of cell with relatively weak adhesibility. For this purpose, we employed ribosomal protein L2 (RPL2) that has high affinity toward silica and metal oxides, including TiO&lt
    inf&gt
    2&lt
    /inf&gt
    , to stably bind a neuronal adhesion protein laminin to the TiO&lt
    inf&gt
    2&lt
    /inf&gt
    surface. We utilized two types of molecular recognition to achieve this - binding of anti-laminin antibody to its antigen (laminin) and binding of protein A to the antibody. We show that a protein complex consisting of laminin/anti-laminin antibody/protein A-RPL2 is spontaneously formed by simply mixing the precursor proteins in solution phase. We then show that the surface coated with the protein complex supports stable growth of rat hippocampal neurons. Finally, we show that the cells can be selectively grown on the protein complex patterned with the TiO&lt
    inf&gt
    2&lt
    /inf&gt
    -assisted method. The protocol established in this work is a unique combination of a top-down micropatterning of the surface using TiO&lt
    inf&gt
    2&lt
    /inf&gt
    photocatalysis and a bottom-up self-assembly of biomolecules, which can be further applied to pattern a wide range of proteins and cells.

    DOI CiNii

    Scopus

    5
    Citation
    (Scopus)
  • Array of bright silicon-vacancy centers in diamond fabricated by low-energy focused ion beam implantation

    Syuto Tamura, Godai Koike, Akira Komatsubara, Tokuyuki Teraji, Shinobu Onoda, Liam P. McGuinness, Lachlan Rogers, Boris Naydenov, E. Wu, Liu Yan, Fedor Jelezko, Takeshi Ohshima, Junichi Isoya, Takahiro Shinada, Takashi Tanii

    APPLIED PHYSICS EXPRESS   7 ( 11 )  2014.11  [Refereed]

     View Summary

    Among promising color centers for single-photon sources in diamond, the negatively charged silicon-vacancy (SiV-) has 70% of its emission to the zero-phonon line (ZPL), in contrast to the negatively charged nitrogen vacancy (NV-), which has a broad spectrum. Fabricating single centers of useful defect complexes with high yield and excellent grown-in defect properties by ion implantation has proven to be challenging. We have fabricated bright single SiV- centers by 60-keV focused ion beam implantation and subsequent annealing at 1000 degrees C with high positioning accuracy and a high yield of 15%. (C) 2014 The Japan Society of Applied Physics

    DOI

    Scopus

    73
    Citation
    (Scopus)
  • In situ modification of cell-culture scaffolds by photocatalytic decomposition of organosilane monolayers

    Hideaki Yamamoto, Takanori Demura, Mayu Morita, Sho Kono, Kohei Sekine, Takahiro Shinada, Shun Nakamura, Takashi Tanii

    BIOFABRICATION   6 ( 3 )  2014.09  [Refereed]

     View Summary

    We demonstrate a novel application of TiO2 photocatalysis for modifying the cell affinity of a scaffold surface in a cell-culture environment. An as-deposited octadecyltrichlorosilane self-assembled monolayer (OTS SAM) on TiO2 was found to be hydrophobic and stably adsorbed serum albumins that blocked subsequent adsorption of other proteins and cells. Upon irradiation of ultraviolet (UV) light, OTS molecules were decomposed and became permissive to the adhesion of PC12 cells via adsorption of an extracellular matrix protein, collagen. Optimal UV dose was 200 J cm(-2) for OTS SAM on TiO2. The amount of collagen adsorption decreased when excessive UV light was irradiated, most likely due to the surface being too hydrophilic to support its adsorption. This UV-induced modification required TiO2 to be present under the SAM and hence is a result of TiO2 photocatalysis. The UV irradiation for surface modification can be performed before cell plating or during cell culture. We also demonstrate that poly(ethylene glycol) SAM can also be patterned with this method, indicating that it is applicable to both hydrophobic and hydrophilic SAMs. This method provides a unique tool for fabricating cell microarrays and studying dynamical properties of living cells.

    DOI

    Scopus

    16
    Citation
    (Scopus)
  • 21031 Verification of Damage Monitoring System based on Measurement of Relative Story Displacements in E-Defense Shaking Table Test of High-rise Steel Building : Part-2 Measurement and Damage Evaluation Results

    HATADA Tomohiko, KATAMURA Ryuta, HAGIWARA Hajime, TANII Takashi, NITTA Yoshihiro, NISHITANI Akira

    Summaries of technical papers of annual meeting   2014 ( 0 ) 61 - 62  2014.09

    CiNii

  • 21030 Verification of Damage Monitoring System Based on Measurement of Relative Story Displacements in E-Defense Shaking Table Test of High-rise Steel Building : Part-1 System Outline

    KATAMURA Ryuta, HATADA Tomohiko, HAGIWARA Hajime, TANII Takashi, NITTA Yoshihiro, NISHITANI Akira

    Summaries of technical papers of annual meeting   2014 ( 0 ) 59 - 60  2014.09

    CiNii

  • Verification of Damage Monitoring and Evaluation Method for High-rise Buildings based on Measurement of Relative Story Displacements in E-Defense Shaking Table Test

    T.Hatada, R.Katamura, H.Hagiwara, Y.Nitta, T.Tanii, A.Nishitani

    Proceedings of the Sixth World Conference on Structural Control and Monitoring    2014.07

  • 1P307 Single molecule observation of actin polymerization in linear zero-mode waveguid(27. Bioimaging,Poster,The 52nd Annual Meeting of the Biophysical Society of Japan(BSJ2014))

    Yamamoto Masamichi, Tsunoda Makoto, Higano Shun, Okubo Kotaro, Tanii Takashi, Funatsu Takashi

    Seibutsu Butsuri   54 ( 1 ) S192  2014

    DOI CiNii

  • In situ modification of cell-culture scaffolds by photocatalytic decomposition of organosilane monolayers

    Hideaki Yamamoto, Takanori Demura, Mayu Morita, Sho Kono, Kohei Sekine, Takahiro Shinada, Shun Nakamura, Takashi Tanii

    Biofabrication   6 ( 3 )  2014

     View Summary

    We demonstrate a novel application of TiO2 photocatalysis for modifying the cell affinity of a scaffold surface in a cell-culture environment. An as-deposited octadecyltrichlorosilane self-assembled monolayer (OTS SAM) on TiO2 was found to be hydrophobic and stably adsorbed serum albumins that blocked subsequent adsorption of other proteins and cells. Upon irradiation of ultraviolet (UV) light, OTS molecules were decomposed and became permissive to the adhesion of PC12 cells via adsorption of an extracellular matrix protein, collagen. Optimal UV dose was 200 J cm-2 for OTS SAM on TiO2. The amount of collagen adsorption decreased when excessive UV light was irradiated, most likely due to the surface being too hydrophilic to support its adsorption. This UV-induced modification required TiO2 to be present under the SAM and hence is a result of TiO2 photocatalysis. The UV irradiation for surface modification can be performed before cell plating or during cell culture. We also demonstrate that poly(ethylene glycol) SAM can also be patterned with this method, indicating that it is applicable to both hydrophobic and hydrophilic SAMs. This method provides a unique tool for fabricating cell microarrays and studying dynamical properties of living cells.

    DOI PubMed

    Scopus

    16
    Citation
    (Scopus)
  • Opportunity of single atom control for quantum processing in silicon and diamond

    Takahiro Shinada, Prati Enrico, Syuto Tamura, Takashi Tanii, Tokuyuki Teraji, Shinobu Onoda, Takeshi Ohshima, Liam P. McGuinness, Lachlan Rogers, Boris Naydenov, Fedor Jelezko, Junichi Isoya

    2014 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW)    2014  [Refereed]

     View Summary

    Future CMOS will require the placement of dopants in a predetermined location, namely, a single atom control. Deterministic doping method, i.e. single-ion implantation, realizes ordered arrays of single-atoms in silicon, diamond and other materials, which might provide opportunities to single-dopant transport or single-photon source beneficial to quantum processing.

    DOI

    Scopus

    4
    Citation
    (Scopus)
  • An experimental study on simultaneous measurement of relative displacement and local inclination angle

    Iwao Matsuya, Ryuta Katamura, Ikuo Ihara, Takashi Tanii, Yoshihiro Nitta, Akira Nishitani

    AIJ Journal of Technology and Design   19 ( 43 ) 951 - 954  2013.10

     View Summary

    We have developed a noncontact-type relative displacement sensor for structural health monitoring which is capable of measuring relative displacement and rotation angle of the object independently. The sensor is composed of a laser as a measurement target and two position sensitive detectors (PSDs). The accuracy of the sensor system was experimentally evaluated to be 0.10 mm in the relative displacement measurement and 0.22 mrad in the rotation angle measurement respectively. These results indicate that the developed sensor system has a sufficient accuracy for structural health monitoring.

    DOI CiNii

    Scopus

  • 21056 Relative Story Displacement Measurement System of Building Structures by Nocontact-type Sensors : Part-9 Estimation of Story hystereses with E-defense

    MATSUI Chisa, NISHITANI Akira, TANII Takashi, NITTA Yoshihiro, HATADA Tomohiko

    Summaries of technical papers of annual meeting   2013 ( 0 ) 111 - 112  2013.08

    CiNii

  • Improving zero-mode waveguide structure for enhancing signal-to-noise ratio of real-time single-molecule fluorescence imaging: A computational study

    Takashi Tanii, Rena Akahori, Shun Higano, Kotaro Okubo, Hideaki Yamamoto, Taro Ueno, Takashi Funatsu

    Physical Review E - Statistical, Nonlinear, and Soft Matter Physics   88 ( 1 )  2013.07

     View Summary

    We investigated the signal-to-noise ratio (S/N) of real-time single-molecule fluorescence imaging (SMFI) using zero-mode waveguides (ZMWs). The excitation light and the fluorescence propagating from a molecule in the ZMW were analyzed by computational optics simulation. The dependence of the S/N on the ZMW structure was investigated with the diameter and etching depth as the simulation parameters. We found that the SMFI using a conventional ZMW was near the critical level for detecting binding and dissociation events. We show that etching the glass surface of the ZMW by 60 nm enhances the S/N six times the conventional nonetched ZMWs. The enhanced S/N improves the temporal resolution of the SMFI at physiological concentrations. © 2013 American Physical Society.

    DOI PubMed

    Scopus

    12
    Citation
    (Scopus)
  • Improving zero-mode waveguide structure for enhancing signal-to-noise ratio of real-time single-molecule fluorescence imaging: A computational study

    Takashi Tanii, Rena Akahori, Shun Higano, Kotaro Okubo, Hideaki Yamamoto, Taro Ueno, Takashi Funatsu

    Physical Review E - Statistical, Nonlinear, and Soft Matter Physics   88 ( 1 )  2013.07

     View Summary

    We investigated the signal-to-noise ratio (S/N) of real-time single-molecule fluorescence imaging (SMFI) using zero-mode waveguides (ZMWs). The excitation light and the fluorescence propagating from a molecule in the ZMW were analyzed by computational optics simulation. The dependence of the S/N on the ZMW structure was investigated with the diameter and etching depth as the simulation parameters. We found that the SMFI using a conventional ZMW was near the critical level for detecting binding and dissociation events. We show that etching the glass surface of the ZMW by 60 nm enhances the S/N six times the conventional nonetched ZMWs. The enhanced S/N improves the temporal resolution of the SMFI at physiological concentrations. © 2013 American Physical Society.

    DOI PubMed

    Scopus

    12
    Citation
    (Scopus)
  • 3P141 Observation of actin polymerization in linear zero-mode waveguide(11. Molecular motor,Poster)

    Yamamoto Masamichi, Tsunoda Makoto, Higano Shun, Okubo Kotaro, Tanii Takashi, Funatsu Takashi

    Seibutsu Butsuri   53 ( 1 ) S235  2013

    DOI CiNii

  • Probing Single-Molecule Enzymatic Dynamics of B-Glucosidase using Zero-Mode Waveguides

    Ryo Iizuka, Ikumi Toshimitsu, Kentaro Tahara, Hirokatsu Arai, Toshihiro Tetsuka, Koji Matsuoka, Shou Ryu, Yuji Asano, Takashi Tanii, Kiyohiko Igarashi, Masahiro Samejima, Takashi Funatsu

    BIOPHYSICAL JOURNAL   104 ( 2 ) 178A - 178A  2013.01  [Refereed]

  • Differential neurite outgrowth is required for axon specification by cultured hippocampal neurons

    Hideaki Yamamoto, Takanori Demura, Mayu Morita, Gary A. Banker, Takashi Tanii, Shun Nakamura

    JOURNAL OF NEUROCHEMISTRY   123 ( 6 ) 904 - 910  2012.12  [Refereed]

     View Summary

    Formation of an axon is the first morphological evidence of neuronal polarization, visible as a profound outgrowth of the axon compared with sibling neurites. One unsolved question on the mechanism of axon formation is the role of axon outgrowth in axon specification. This question was difficult to assess, because neurons freely extend their neurites in a conventional culture. Here, we leveraged surface nano/micro-modification techniques to fabricate a template substrate for constraining neurite lengths of cultured neurons. Using the template, we asked (i) Do neurons polarize even if all neurites cannot grow sufficiently long? (ii) Would the neurite be fated to become an axon if only one was allowed to grow long? A pattern with symmetrical short paths (20 mu m) was used to address the former question, and an asymmetrical pattern with one path extended to 100 mu m for the latter. Axon formation was evaluated by tau-1/MAP2 immunostaining and live-cell imaging of constitutively-active kinesin-1. We found that (1) neurons cannot polarize when extension of all neurites is restricted and that (2) when only a single neurite is permitted to grow long, neurons polarize and the longest neurite becomes the axon. These results provide clear evidence that axon outgrowth is required for its specification.

    DOI

    Scopus

    55
    Citation
    (Scopus)
  • Structural Monitoring Scheme Based on Directly Measured Inter-Story Drift Displacement Response Information

    C. Matsui, A. Nishitani, Y. Nitta, T. Hatada, R. Katamura, S. Miura, M. Oshio, Y. Suzuki, M. Takahashi, T. Tanii, S. Shoji, K. Kanekawa, I. Ohdomari, I. Matsuya

    Proceedings of 15th World Conference on Earthquake Engineering   1 ( 1 ) 1267-1 - 1267-8  2012.09

  • Direct Sensing of Inter-story Drift Displacements and Health Monitoring Besed on It

    A. Nishitani, C. Matsui, Y. Nitta, T. Hatada, R. Katamura, M. Takahashi, I. Matsuya, K. Kanekawa, T. Tanii, I. Ohdomari

    Proceedings of the 7th international workshop on Advanced Smart Materials and Smart Structures Technology (ANCRiSST 2012)   7 ( 1 )  2012.07

  • Reduction of threshold voltage fluctuation in field-effect transistors by controlling individual dopant position

    Masahiro Hori, Keigo Taira, Akira Komatsubara, Kuninori Kumagai, Yukinori Ono, Takashi Tanii, Tetsuo Endoh, Takahiro Shinada

    APPLIED PHYSICS LETTERS   101 ( 1 )  2012.07  [Refereed]

     View Summary

    To investigate the impact of only the dopant position on threshold voltage (V-th) in nanoscale field-effect transistors, we fabricated transistors with ordered dopant arrays and conventional random channel doping. Electrical measurements revealed that device performance could be enhanced by controlling the dopant position alone, despite varying dopant number according to a Poisson distribution. Furthermore, device-to-device fluctuations in V-th could be suppressed by implanting a heavier ion such as arsenic owing to the reduction of the projected ion struggling. The results of our study highlight potential improvements in device performance by controlling individual dopant positions. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4733289]

    DOI

    Scopus

    8
    Citation
    (Scopus)
  • Significance of Direct Displacement Measurement based Health Monitoring

    A. Nishitani, C. Matsui, Y. Nitta, T. Hatada, R. Katayama, I. Matsuya, K. Kanekawa, T. Tanii, S. Shoji, I. Ohdomari

    Proceedings of the 5th Asian-Pacific Symposium on Structural Reliability and its Applications   1 ( 1 ) 647 - 652  2012.05

    DOI

  • Development of 5-DOF relative-story displacement sensor for structural health monitoring

    Iwao Matsuya, Ryuta Katamura, Miroku Iba, Hideaki Kondo, Kiyoshi Kanekawa, Tomohiko Hatada, Yoshihiro Nitta, Takashi Tanii, Shuichi Shoji, Akira Nishitani, Iwao Ohdomari

    Nihon Kikai Gakkai Ronbunshu, C Hen/Transactions of the Japan Society of Mechanical Engineers, Part C   78 ( 789 ) 1451 - 1459  2012

     View Summary

    We have developed a novel relative-story displacement sensor for structural health monitoring which is capable of measuring the 5-DOF movement of building layers. Three pairs of infrared-light emitting diode arrays and position sensitive detector units were used for simultaneously measuring the relative displacement, the local inclination angle, and the torsion angle between two adjacent layers. For verification, laboratory tests were carried out using a shaking table, a motorized micrometer, and a rotation stage. In the static experiment, it is verified that the local inclination angle and the torsion angle can be measured as well as the relative-story displacement using the sensor system. The resolution of the sensor system in the displacement measurement, that in the inclination angle measurement, and that in the torsion angle measurement were evaluated to be 0.10 mm, 34.4 μrad, and 14.6 μrad, respectively. In the dynamic response experiment, the accuracy of the sensor system was experimentally evaluated to be 0.20 mm in the relative-displacement measurement, 110 μrad in the inclination angle measurement, and 90 μrad in the torsion angle measurement, respectively. These results indicate that the developed sensor system has a sufficient accuracy for structural health monitoring. © 2012 The Japan Society of Mechanical Engineers.

    DOI CiNii

    Scopus

  • Deterministic-doped Silicon Devices and Their Quantum Transport

    SHINADA Takahiro, HORI Masahiro, GUAGLIARDO Filipo, ONO Yukinori, KUMAGAI Kuninori, TANII Takashi, PRATI Enrico

    Technical report of IEICE. SDM   111 ( 426 ) 1 - 5  2012.01

     View Summary

    Si transistors with deterministically implanted donors were fabricated by single-ion implantation method and their quantum transport was investigated. By placing donors in one dimensional array, we observed the transport characteristics categorized into two regimes: single-electron tunneling through isolated D^0 and D^- states; Hubbard band formation due to the inter-donor coupling. Our deterministic doping method is more effective and reliable for single-dopant transistor development and paves the way towards single atom electronics for extended CMOS applications.

    CiNii

  • Deterministic-doped Silicon Devices and Their Quantum Transport

    SHINADA Takahiro, HORI Masahiro, GUAGLIARDO Filipo, ONO Yukinori, KUMAGAI Kuninori, TANII Takashi, PRATI Enrico

    IEICE technical report. Electron devices   111 ( 425 ) 1 - 5  2012.01

     View Summary

    Si transistors with deterministically implanted donors were fabricated by single-ion implantation method and their quantum transport was investigated. By placing donors in one dimensional array, we observed the transport characteristics categorized into two regimes: single-electron tunneling through isolated D^0 and D^- states; Hubbard band formation due to the inter-donor coupling. Our deterministic doping method is more effective and reliable for single-dopant transistor development and paves the way towards single atom electronics for extended CMOS applications.

    CiNii

  • Deterministic-doped Silicon Devices and Their Quantum Transport

    SHINADA Takahiro, HORI Masahiro, GUAGLIARDO Filipo, ONO Yukinori, KUMAGAI Kuninori, TANII Takashi, PRATI Enrico

    Technical report of IEICE. SDM   111 ( 426 ) 1 - 5  2012.01

     View Summary

    Si transistors with deterministically implanted donors were fabricated by single-ion implantation method and their quantum transport was investigated. By placing donors in one dimensional array, we observed the transport characteristics categorized into two regimes: single-electron tunneling through isolated D^0 and D^- states; Hubbard band formation due to the inter-donor coupling. Our deterministic doping method is more effective and reliable for single-dopant transistor development and paves the way towards single atom electronics for extended CMOS applications.

    CiNii

  • Deterministic-doped Silicon Devices and Their Quantum Transport

    SHINADA Takahiro, HORI Masahiro, GUAGLIARDO Filipo, ONO Yukinori, KUMAGAI Kuninori, TANII Takashi, PRATI Enrico

    IEICE technical report. Electron devices   111 ( 425 ) 1 - 5  2012.01

     View Summary

    Si transistors with deterministically implanted donors were fabricated by single-ion implantation method and their quantum transport was investigated. By placing donors in one dimensional array, we observed the transport characteristics categorized into two regimes: single-electron tunneling through isolated D^0 and D^- states; Hubbard band formation due to the inter-donor coupling. Our deterministic doping method is more effective and reliable for single-dopant transistor development and paves the way towards single atom electronics for extended CMOS applications.

    CiNii

  • Quantum transport in deterministically implanted single-donors in Si FETs

    T. Shinada, M. Hori, F. Guagliarldo, G. Ferrari, A. Komatubara, K. Kumagai, T. Tanii, T. Endoh, Y. Ono, E. Prati

    International Electron Devices Meeting (IEDM2011)   Session No. 30.4  2011.12  [Refereed]

    DOI

    Scopus

    19
    Citation
    (Scopus)
  • In-situ guidance of individual neuronal processes by wet femtosecond-laser processing of self-assembled monolayers

    Hideaki Yamamoto, Kazunori Okano, Takanori Demura, Yoichiroh Hosokawa, Hiroshi Masuhara, Takashi Tanii, Shun Nakamura

    APPLIED PHYSICS LETTERS   99 ( 16 )  2011.10  [Refereed]

     View Summary

    In-situ guidance of neuronal processes (neurites) is demonstrated by applying wet femtosecond-laser processing to an organosilane self-assembled monolayer (SAM) template. By scanning focused laser beam between cell adhesion sites, on which primary neurons adhered and extended their neurites, we succeeded in guiding the neurites along the laser-scanning line. This guidance was accomplished by multiphoton laser ablation of cytophobic SAM layer and subsequent adsorption of cell adhesion molecule, laminin, onto the ablated region. This technique allows us to arbitrarily design neuronal networks in vitro. (C) 2011 American Institute of Physics. [doi:10.1063/1.3651291]

    DOI

    Scopus

    32
    Citation
    (Scopus)
  • Impact of a few dopant positions controlled by deterministic single-ion doping on the transconductance of field-effect transistors

    Masahiro Hori, Takahiro Shinada, Yukinori Ono, Akira Komatsubara, Kuninori Kumagai, Takashi Tanii, Tetsuo Endoh, Iwao Ohdomari

    APPLIED PHYSICS LETTERS   99 ( 6 )  2011.08  [Refereed]

     View Summary

    As semiconductor device dimensions decrease, the individual impurity atom position becomes a critical factor in determining device performance. We fabricated transistors with ordered and random dopant distributions on one side of the channel and evaluated the transconductance to investigate the impact of discrete dopant positions on the electron transport properties. The largest transconductance was observed when dopants were placed on the drain side in an ordered distribution; this was attributed to the suppression of injection velocity degradation on the source side and the uniformity of the electrostatic potential. Thus, the control of discrete dopant positions could enhance the device performance. (C) 2011 American Institute of Physics. [doi:10.1063/1.3622141]

    DOI

    Scopus

    13
    Citation
    (Scopus)
  • 21424 Relative Story Displacement Measurement System of Building Structures by Noncontact-type Sensors : Part-6 Development of Relative Story Displacement Sensor Capable of 5DOF Measurement

    MATSUYA Iwao, KATAMURA Ryuta, HATADA Tomohiko, TAKAHASHI Motoichi, TANII Takashi, NITTA Yoshihiro, NISHITANI Akira

    Summaries of technical papers of Annual Meeting Architectural Institute of Japan. B-2, Structures II, Structural dynamics nuclear power plants   2011   847 - 848  2011.07

    CiNii

  • Control of Dopant Distribution by Single-Ion Implantation and its Impact on Transconductance of FETs

    T. Shinada, M. Hori, Y. Ono, A. Komatsubara, K. Kumagai, T. Tanii, T. Endoh, I Ohdomari

    2011 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2011)   1B.4   71 - 74  2011.06  [Refereed]

  • Application of Organosilane Monolayer Template to Quantitative Evaluation of Cancer Cell Adhesive Ability

    Takashi Tanii, Kosuke Sasaki, Kota Ichisawa, Takanori Demura, Yuichi Beppu, Hoan Anh Vu, Hoan Thanh Chi, Hideaki Yamamoto, Yuko Sato

    JAPANESE JOURNAL OF APPLIED PHYSICS   50 ( 6 )  2011.06  [Refereed]

     View Summary

    The adhesive ability of two human pancreatic cancer cell lines was evaluated using organosilane monolayer templates (OMTs). Using the OMT, the spreading area of adhered cells can be limited, and this enables us to focus on the initial attachment process of adhesion. Moreover, it becomes possible to arrange the cells in an array and to quantitatively evaluate the number of attached cells. The adhesive ability of the cancer cells cultured on the OMT was controlled by adding (-)-epigallocatechin-3-gallate (EGCG), which blocks a receptor that mediates cell adhesion and is overexpressed in cancer cells. Measurement of the relative ability of the cancer cells to attach to the OMT revealed that the ability for attachment decreased with increasing EGCG concentration. The results agreed well with the western blot analysis, indicating that the OMT can potentially be employed to evaluate the adhesive ability of various cancer cells. (c) 2011 The Japan Society of Applied Physics

    DOI

    Scopus

    8
    Citation
    (Scopus)
  • Fabrication of Zero-Mode Waveguide by Ultraviolet Nanoimprint Lithography Lift-Off Process

    Junichi Wada, Shou Ryu, Yuji Asano, Taro Ueno, Takashi Funatsu, Takao Yukawa, Jun Mizuno, Takashi Tanii

    JAPANESE JOURNAL OF APPLIED PHYSICS   50 ( 6 )  2011.06  [Refereed]

     View Summary

    Zero-mode waveguides for single-molecule fluorescence imaging were fabricated using a simple desktop UV nanoimprint lithography system. An array of 30- to 150-nm-diameter nanoholes was successfully fabricated in an aluminum layer on a thin quartz plate by the single-step lift-off process using the UV-curable resist NIAC 707. Using the nanoholes, we performed real-time single-molecule fluorescence imaging to visualize the cochaperonin GroES binding with and dissociating from the chaperonin GroEL immobilized within the nanoholes. The demonstration revealed that the fluorescence from the GroES binding with the GroEL was three times stronger than the fluorescence from the GroES undergoing Brownian motion, and the real-time single-molecule fluorescence imaging was feasible using the zero-mode waveguide fabricated by the UV nanoimprint lithography lift-off process. (C) 2011 The Japan Society of Applied Physics

    DOI

    Scopus

    9
    Citation
    (Scopus)
  • Development of Lateral Displacement Sensor for Real-Time Detection of Structural Damage

    Iwao Matsuya, Ryota Tomishi, Maya Sato, Kiyoshi Kanekawa, Yoshihiro Nitta, Motoichi Takahashi, Satoru Miura, Yasutsugu Suzuki, Tomohiko Hatada, Ryuta Katamura, Takashi Tanii, Shuichi Shoji, Akira Nishitani, Iwao Ohdomari

    IEEJ TRANSACTIONS ON ELECTRICAL AND ELECTRONIC ENGINEERING   6 ( 3 ) 266 - 272  2011.05  [Refereed]

     View Summary

    We have developed a novel sensor that enables us to measure the relative story displacement of a building structure in real time. This lateral displacement sensor (LDS) is composed of a light-emitting diode (LED) array, which is fixed on the ceiling, and a position-sensitive detector (PSD) unit, which is placed on the floor. We optimized the LDS to achieve high accuracy in lateral displacement measurement. The accuracy was evaluated to be 60 mu m by conducting shaking table tests. Two LDSs were implemented in an actual building equipped with an active variable stiffness (AVS) system, and the building was vibrated with seismic waveforms by an exciter placed on the rooftop. The seismic displacement of the second floor relative to the first floor was measured using the LDS. Furthermore, the inclination angle of the second floor could be measured using the LDS during the seismic vibration. Using the AVS system, we realized the residual displacement of the second floor without inducing damage to the building, and succeeded in real-time residual displacement measurement for the first time. These results indicate that the LDS is useful for the health diagnosis of a building structure. (C) 2011 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.

    DOI

    Scopus

    23
    Citation
    (Scopus)
  • Enhancing Single-Ion Detection Efficiency by Applying Substrate Bias Voltage for Deterministic Single-Ion Doping

    Masahiro Hori, Takahiro Shinada, Keigo Taira, Akira Komatsubara, Yukinori Ono, Takashi Tanii, Tetsuo Endoh, Iwao Ohdomari

    APPLIED PHYSICS EXPRESS   4 ( 4 )  2011.04  [Refereed]

     View Summary

    A single-ion implantation technique that enables us to implant dopant ions one-by-one into semiconductors until the desired number is reached has been developed. The key to controlling the ion number is to detect secondary electrons (SEs) emitted from a target upon ion incidence. The SE detection efficiency currently achieved is 90% due to the low probability of SE emission, but has been enhanced to almost 100% by increasing the number of SEs by controlling the substrate bias voltage. This improvement has accelerated the prospects for realizing single-dopant devices, which are necessary for the ultimate control of the ion number. (C) 2011 The Japan Society of Applied Physics

    DOI

    Scopus

    11
    Citation
    (Scopus)
  • Single atom doping and Discrete Dopant Effects on Transistor Performance

    SHINADA Takahiro, HORI Masahiro, TAIRA Keigo, KOMATSUBARA Akira, TANII Takashi, OHDOMARI Iwao, ONO Yukinori, ENDOH Tetsuo

      2011 ( 35 ) 1 - 4  2011.03

    CiNii

  • Relative-Story Displacement Sensor for Measuring Five-Degree-of-Freedom Movement of Building Layers

    Iwao Matsuya, Ryuta Katamura, Maya Sato, Miroku Iba, Hideaki Kondo, Kiyoshi Kanekawa, Motoichi Takahashi, Tomohiko Hatada, Yoshihiro Nitta, Takashi Tanii, Shuichi Shoji, Akira Nishitani, Iwao Ohdomari

    SENSORS AND SMART STRUCTURES TECHNOLOGIES FOR CIVIL, MECHANICAL, AND AEROSPACE SYSTEMS 2011   7981  2011

     View Summary

    We have developed a novel relative-story displacement sensor capable of measuring the 5-degree-of-freedom movement of building layers for structural health monitoring. Three pairs of infrared-light emitting diode arrays and position-sensitive detector units were used for simultaneously measuring the relative-story displacement, the inclination angle of the lower layer, and the torsion angle between two adjacent layers. For verification, laboratory tests were carried out using a shaking table, a motorized micrometer and a rotation stage. In the static experiment, it is verified that the local inclination angle and the torsion angle can be measured as well as the relative-story displacement using the sensor system. The resolution of the sensor system in the displacement measurement, that in the inclination angle measurement, and that in the torsion angle measurement were evaluated to be 0.10 mm, 34.4 mu rad, and 14.6 mu rad, respectively. In the dynamic response experiment, the accuracy of the sensor system was experimentally evaluated to be 0.20 mm in the relative-displacement measurement, 110 mu rad in the inclination angle measurement, and 90 mu rad in the torsion angle measurement, respectively. These results indicate that the developed sensor system has a sufficient accuracy for the structural health diagnostics of buildings.

    DOI

    Scopus

    2
    Citation
    (Scopus)
  • Development of lateral displacement sensor for real-time detection of structural damage

    Iwao Matsuya, Ryota Tomishi, Maya Sato, Kiyoshi Kanekawa, Yoshihiro Nitta, Motoichi Takahashi, Satoru Miura, Yasutsugu Suzuki, Tomohiko Hatada, Ryuta Katamura, Takashi Tanii, Shuichi Shoji, Akira Nishitani, Iwao Ohdomari

    IEEJ Transactions on Electrical and Electronic Engineering   6 ( 3 ) 266 - 272  2011

     View Summary

    We have developed a novel sensor that enables us to measure the relative story displacement of a building structure in real time. This lateral displacement sensor (LDS) is composed of a light-emitting diode (LED) array, which is fixed on the ceiling, and a position-sensitive detector (PSD) unit, which is placed on the floor. We optimized the LDS to achieve high accuracy in lateral displacement measurement. The accuracy was evaluated to be 60 μm by conducting shaking table tests. Two LDSs were implemented in an actual building equipped with an active variable stiffness (AVS) system, and the building was vibrated with seismic waveforms by an exciter placed on the rooftop. The seismic displacement of the second floor relative to the first floor was measured using the LDS. Furthermore, the inclination angle of the second floor could be measured using the LDS during the seismic vibration. Using the AVS system, we realized the residual displacement of the second floor without inducing damage to the building, and succeeded in real-time residual displacement measurement for the first time. These results indicate that the LDS is useful for the health diagnosis of a building structure. © 2011 Institute of Electrical Engineers of Japan. Published by John Wiley &amp
    Sons, Inc.

    DOI

    Scopus

    23
    Citation
    (Scopus)
  • A Relative-Story Displacement Sensor for Structural Health Monitoring Capable of Measuring the Local Inclination Angle and the Relative Displacement

    MATSUYA Iwao, KATAMURA Ryuta, SATO Maya, KONDO Hideaki, IBA Miroku, KANEKAWA Kiyoshi, NITTA Yoshihiro, TANII Takashi, SHOJI Shuichi, NISHITANI Akira, OHDOMARI Iwao

    Transactions of the Japan Society of Mechanical Engineers Series B   77 ( 777 ) 736 - 740  2011

     View Summary

    We propose a novel relative-story displacement sensor for structural health monitoring. The sensor is composed of three pairs of position sensitive detector (PSD) units and light emitting diode (LED) arrays, and is capable of measuring both the local inclination angle of the PSD unit and the relative displacement between the PSD unit and the LED array. By immobilizing the LED arrays on the ceiling and the PSD units on the floor, we can accurately measure the relative-story displacement in real time. We have verified the measurement accuracy of the developed sensor using a shaking table and a θ stage, and the accuracy was evaluated to be approximately 0.15 mm in the displacement and 0.1 mrad in the local rotation angle. The results indicate that the developed sensor is applicable to the relative-story displacement measurement for the diagnostics of an actual building.

    DOI CiNii

    Scopus

  • A Relative-Story Displacement Sensor for Structural Health Monitoring Capable of Measuring the Local Inclination Angle and the Relative Displacement

    MATSUYA Iwao, KATAMURA Ryuta, SATO Maya, KONDO Hideaki, IBA Miroku, KANEKAWA Kiyoshi, NITTA Yoshihiro, TANII Takashi, SHOJI Shuichi, NISHITANI Akira, OHDOMARI Iwao

    TRANSACTIONS OF THE JAPAN SOCIETY OF MECHANICAL ENGINEERS Series A   77 ( 777 ) 736 - 740  2011

     View Summary

    We propose a novel relative-story displacement sensor for structural health monitoring. The sensor is composed of three pairs of position sensitive detector (PSD) units and light emitting diode (LED) arrays, and is capable of measuring both the local inclination angle of the PSD unit and the relative displacement between the PSD unit and the LED array. By immobilizing the LED arrays on the ceiling and the PSD units on the floor, we can accurately measure the relative-story displacement in real time. We have verified the measurement accuracy of the developed sensor using a shaking table and a θ stage, and the accuracy was evaluated to be approximately 0.15 mm in the displacement and 0.1 mrad in the local rotation angle. The results indicate that the developed sensor is applicable to the relative-story displacement measurement for the diagnostics of an actual building.

    CiNii

  • In situ guidance of individual neurites by wet femtosecond-laser processing of organosilane monolayers

    Hideaki Yamamoto, Kazunori Okano, Takashi Tanii, Takanori Demura, Yoichiroh Hosokawa, Shun Nakamura

    NEUROSCIENCE RESEARCH   71   E236 - E237  2011  [Refereed]

    DOI

  • Measuring Relative-Story Displacement and Local Inclination Angle Using Multiple Position-Sensitive Detectors

    Iwao Matsuya, Ryuta Katamura, Maya Sato, Miroku Iba, Hideaki Kondo, Kiyoshi Kanekawa, Motoichi Takahashi, Tomohiko Hatada, Yoshihiro Nitta, Takashi Tanii, Shuichi Shoji, Akira Nishitani, Iwao Ohdomari

    SENSORS   10 ( 11 ) 9687 - 9697  2010.11  [Refereed]

     View Summary

    We propose a novel sensor system for monitoring the structural health of a building. The system optically measures the relative-story displacement during earthquakes for detecting any deformations of building elements. The sensor unit is composed of three position sensitive detectors (PSDs) and lenses capable of measuring the relative-story displacement precisely, even if the PSD unit was inclined in response to the seismic vibration. For verification, laboratory tests were carried out using an X theta-stage and a shaking table. The static experiment verified that the sensor could measure the local inclination angle as well as the lateral displacement. The dynamic experiment revealed that the accuracy of the sensor was 150 mu m in the relative-displacement measurement and 100 mu rad in the inclination angle measurement. These results indicate that the proposed sensor system has sufficient accuracy for the measurement of relative-story displacement in response to the seismic vibration.

    DOI

    Scopus

    29
    Citation
    (Scopus)
  • Measuring Relative-Story Displacement and Local Inclination Angle Using Multiple Position-Sensitive Detectors

    Iwao Matsuya, Ryuta Katamura, Maya Sato, Miroku Iba, Hideaki Kondo, Kiyoshi Kanekawa, Motoichi Takahashi, Tomohiko Hatada, Yoshihiro Nitta, Takashi Tanii, Shuichi Shoji, Akira Nishitani, Iwao Ohdomari

    SENSORS   10 ( 11 ) 9687 - 9697  2010.11  [Refereed]

     View Summary

    We propose a novel sensor system for monitoring the structural health of a building. The system optically measures the relative-story displacement during earthquakes for detecting any deformations of building elements. The sensor unit is composed of three position sensitive detectors (PSDs) and lenses capable of measuring the relative-story displacement precisely, even if the PSD unit was inclined in response to the seismic vibration. For verification, laboratory tests were carried out using an X theta-stage and a shaking table. The static experiment verified that the sensor could measure the local inclination angle as well as the lateral displacement. The dynamic experiment revealed that the accuracy of the sensor was 150 mu m in the relative-displacement measurement and 100 mu rad in the inclination angle measurement. These results indicate that the proposed sensor system has sufficient accuracy for the measurement of relative-story displacement in response to the seismic vibration.

    DOI

    Scopus

    29
    Citation
    (Scopus)
  • 711 A Relative-Story Displacement Sensor for Structural Health Monitoring Capable of Measuring the Local Inclination Angle and the Relative Displacement

    MATSUYA Iwao, KATAMURA Ryuta, SATO Maya, KONDO Hideaki, IBA Miroku, KANEKAWA Kiyoshi, NITTA Yoshihiro, TANII Takashi, SHOJI Shuichi, NISHITANI Akira, OHDOMARI Iwao

      2010   434 - 436  2010.10

     View Summary

    We propose a novel relative-story displacement sensor for structural health monitoring. The sensor is composed of three pairs of position sensitive detector (PSD) units and light emitting diode (LED) arrays, and is capable of measuring both the local inclination angle of the PSD unit and the relative displacement between the PSD unit and the LED array. By immobilizing the LED arrays on the ceiling and the PSD units on the floor, we can accurately measure the relative-story displacement in real time. We have verified the measurement accuracy of the developed sensor using a shaking table and a θ stage, and the accuracy was evaluated to be approximately 0.15 mm in the displacement and 0.1 mrad in the local rotation angle. The results indicate that the developed sensor is applicable to the relative-story displacement measurement for the diagnostics of an actual building.

    CiNii

  • Single-molecule Study on the Decay Process of the Football-shaped GroEL-GroES Complex Using Zero-mode Waveguides

    Tomoya Sameshima, Ryo Iizuka, Taro Ueno, Junichi Wada, Mutsuko Aoki, Naonobu Shimamoto, Iwao Ohdomari, Takashi Tanii, Takashi Funatsu

    JOURNAL OF BIOLOGICAL CHEMISTRY   285 ( 30 ) 23157 - 23162  2010.07  [Refereed]

     View Summary

    It has been widely believed that an asymmetric GroEL-GroES complex (termed the bullet-shaped complex) is formed solely throughout the chaperonin reaction cycle, whereas we have recently revealed that a symmetric GroEL-(GroES)(2) complex (the football-shaped complex) can form in the presence of denatured proteins. However, the dynamics of the GroEL-GroES interaction, including the football-shaped complex, is unclear. We investigated the decay process of the football-shaped complex at a single-molecule level. Because submicromolar concentrations of fluorescent GroES are required in solution to form saturated amounts of the football-shaped complex, single-molecule fluorescence imaging was carried out using zero-mode waveguides. The single-molecule study revealed two insights into the GroEL-GroES reaction. First, the first GroES to interact with GroEL does not always dissociate from the football-shaped complex prior to the dissociation of a second GroES. Second, there are two cycles, the "football cycle " and the "bullet cycle," in the chaperonin reaction, and the lifetimes of the football-shaped and the bullet-shaped complexes were determined to be 3-5 s and about 6 s, respectively. These findings shed new light on the molecular mechanism of protein folding mediated by the GroEL-GroES chaperonin system.

    DOI

    Scopus

    34
    Citation
    (Scopus)
  • Noncontact-type relative displacement monitoring system using position sensitive detector

    Iwao Matsuya, Makoto Oshio, Ryota Tomishi, Maya Sato, Kiyoshi Kanekawa, Motoichi Takahashi, Satoru Miura, Yasutsugu Suzuki, Tomohiko Hatada, Ryuta Katamura, Yoshihiro Nitta, Takashi Tanii, Shuichi Shoji, Akira Nishitani, Iwao Ohdomari

    AIJ Journal of Technology and Design   16 ( 33 ) 469 - 472  2010.06

     View Summary

    Recently, relative displacement measurement attracts much attention because of its capability for directly monitoring damages of a building structure. We have developed a noncontact-type relative displacement monitoring system by arranging a two-dimensional PSD paired with a LED array on each story, and investigated the feasibility of this system from the viewpoint of measurement accuracy.

    DOI CiNii

    Scopus

    6
    Citation
    (Scopus)
  • Performance evaluation of MOSFETs with discrete dopant distribution by one-by-one doping method

    T. Shinada, M. Hori, Y. Ono, K.Taira, A. Komatsubara, T.Tanii, T. Endoh, I. Ohdomari

    Proc. of SPIE   7637   763711-1 - 763711-7  2010.05  [Refereed]

    DOI

    Scopus

    1
    Citation
    (Scopus)
  • An Experimental Study on Relative Displacement Sensing Using Phototransistor Array for Building Structures

    Kiyoshi Kanekawa, Iwao Matsuya, Maya Sato, Ryota Tomishi, Motoichi Takahashi, Satoru Miura, Yasutsugu Suzuki, Tomohiko Hatada, Ryuta Katamura, Yoshihiro Nitta, Takashi Tanii, Shuichi Shoji, Akira Nishitani, Iwao Ohdomari

    IEEJ TRANSACTIONS ON ELECTRICAL AND ELECTRONIC ENGINEERING   5 ( 2 ) 251 - 255  2010.03  [Refereed]

     View Summary

    We propose a novel sensor for directly measuring the relative displacement of a building structure. The sensor is composed of a laser light source and a phototransistor (PT) at-ray. The PT array is immobilized on the floor together with a photo scattering plate made of glass, whereas the laser light source is separately immobilized on the ceiling. The photo scattering plate is placed in front of the PT array and distributes the laser beam oil the multiple PTs. The relative displacement between the ceiling and the floor is estimated by the distribution of the PT output voltages, and the displacement is estimated with a resolution finer than the interval between the PTs. The accuracy of the relative displacement sensor (RDS) is experimentally assessed by conducting a shaking table test exhibiting several waves from harmonic sinusoidal waves to real seismic waves. We discuss the feasibility of real-time monitoring system utilizing this sensor. (C) 2010 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.

    DOI

    Scopus

    25
    Citation
    (Scopus)
  • 2P176 Single-molecule analysis of kinesin movement using nanoslit(The 48th Annual Meeting of the Biophysical Society of Japan)

    Usami Atsushi, Tsunoda Makoto, Wada Junichi, Tanii Takashi, Funatsu Takashi

    Seibutsu Butsuri   50 ( 2 ) S113  2010

    DOI CiNii

  • Green Tea Epigalocatechin Gallate Exhibits Anticancer Effect in Human Pancreatic Carcinoma Cells via Inhibition of Both FAK and IGF-1R

    H. A. Vu, Y. Beppu, H. T. Chi, K. Sasaki, H. Yamamoto, P. T. Xinh, T. Tanii, Y. Hara, T. Watanabe, Y. Sato, I. Ohdomari

    THIRD INTERNATIONAL CONFERENCE ON THE DEVELOPMENT OF BIOMEDICAL ENGINEERING IN VIETNAM   27   223 - +  2010  [Refereed]

     View Summary

    Objectives: Green tea epigalocatechin galate (EGCG) has been shown to exhibit a growth-suppressive effect on human pancreatic cancer cells; however, the exact molecular mechanism by which EGCG suppresses cell proliferation is unclear. We hypothesize that interference with cell adhesion might be one mechanism. Methods: The effect of EGCG on cell adhesion and proliferation was examined using pancreatic cancer cells. Results: EGCG-treated pancreatic cancer cells AsPC-1 and BxPC-3 decrease cell adhesion ability on micro-pattern dots, accompanied by dephosphorylations of both focal adhesion kinase (FAK) and insulin-like growth factor 1 receptor (IGF-1R), whereas retained the activations of mitogen-activated protein kinase and mammalian target of rapamycin. The growth of AsPC-1 and BxPC-3 cells, when cultured at low density, can be significantly suppressed by EGCG treatment alone in a dose-dependent manner. At a dose of 100 mu M that completely abolishes activations of FAK and IGF-1R, EGCG suppresses more than 50% of cell proliferation without evidence of apoptosis analyzed by PARP cleavage. Finally, the MEK1/2 inhibitor U0126 enhances growth-suppressive effect of EGCG. Conclusions: Blocking FAK and IGF-1R by EGCG could prove valuable for targeted therapy, which can use in combination with other therapies, for pancreatic cancer.

  • Green Tea Epigallocatechin Gallate Exhibits Anticancer Effect in Human Pancreatic Carcinoma Cells via the Inhibition of Both Focal Adhesion Kinase and Insulin-Like Growth Factor-I Receptor

    Hoang Anh Vu, Yuuichi Beppu, Hoang Thanh Chi, Kousuke Sasaki, Hideaki Yamamoto, Phan Thi Xinh, Takashi Tanii, Yukihiko Hara, Toshiki Watanabe, Yuko Sato, Iwao Ohdomari

    JOURNAL OF BIOMEDICINE AND BIOTECHNOLOGY    2010

     View Summary

    The exact molecular mechanism by which epigallocatechin gallate (EGCG) suppresses human pancreatic cancer cell proliferation is unclear. We show here that EGCG-treated pancreatic cancer cells AsPC-1 and BxPC-3 decrease cell adhesion ability on micropattern dots, accompanied by dephosphorylations of both focal adhesion kinase (FAK) and insulin-like growth factor-1 receptor (IGF-1R) whereas retained the activations of mitogen-activated protein kinase and mammalian target of rapamycin. The growth of AsPC-1 and BxPC-3 cells can be significantly suppressed by EGCG treatment alone in a dose-dependent manner. At a dose of 100 mu M which completely abolishes activations of FAK and IGF-1R, EGCG suppresses more than 50% of cell proliferation without evidence of apoptosis analyzed by PARP cleavage. Finally, the MEK1/2 inhibitor U0126 enhances growth-suppressive effect of EGCG. Our data suggests that blocking FAK and IGF-1R by EGCG could prove valuable for targeted therapy, which can be used in combination with other therapies, for pancreatic cancer.

    DOI

    Scopus

    42
    Citation
    (Scopus)
  • Reliable Single Atom Doping and Discrete Dopant Effects on Transistor Performance

    Takahiro Shinada, Masahiro Hori, Yukinori Ono, Keigo Taira, Akira Komatsubara, Takashi Tanii, Tetsuo Endoh, Iwao Ohdomari

    2010 INTERNATIONAL ELECTRON DEVICES MEETING - TECHNICAL DIGEST    2010

     View Summary

    For reliable deterministic single-atom doping, i.e. single-ion implantation (SII), improvement of single-ion detection efficiency is successfully achieved by controlling channel potential using back-gate of transistor. We also fabricate transistors whose channel dopnats are introduced one-by-one using SII and find that subthreshold current becomes larger when dopants are located at drain-side than source-side. The single-atom doping method could contribute to the novel device development beneficial for extensibility of doped-channel device technologies towards atomic-scale devices and single-dopant device.

  • A Relative-Story Displacement sensor Resolving the Angular Error Problem

    Iwao Matsuya, Maya Sato, Hideaki Kondo, Miroku Iba, Kiyoshi Kanekawa, Takashi Tanii, Akira Nishitani, Iwao Ohdomari, Ryuta Katamura

    2010 IEEE SENSORS     1441 - 1444  2010

     View Summary

    A relative-story displacement sensor for measuring the ceiling-floor displacement and the floor inclination angle was developed. Three pairs of position-sensitive detector (PSD) units and light emitting diode (LED) arrays were utilized for the measurement. The measurement accuracy of the sensor was evaluated using a shaking table and a theta-stage. The outputs from the developed sensor agreed well with the reference, and the accuracy was evaluated to be approximately 0.15 mm in the displacement and 0.1 mrad in the local inclination angle. These results indicate that the developed sensor resolves the angular error problem on the relative-story displacement measurement and is applicable for assessing the safety of actual buildings.

  • An experimental study on relative displacement sensing using phototransistor array for building structures

    Kiyoshi Kanekawa, Iwao Matsuya, Maya Sato, Ryota Tomishi, Motoichi Takahashi, Satoru Miura, Yasutsugu Suzuki, Tomohiko Hatada, Ryuta Katamura, Yoshihiro Nitta, Takashi Tanii, Shuichi Shoji, Akira Nishitani, Iwao Ohdomari

    IEEJ Transactions on Electrical and Electronic Engineering   5 ( 2 ) 251 - 255  2010

     View Summary

    We propose a novel sensor for directly measuring the relative displacement of a building structure. The sensor is composed of a laser light source and a phototransistor (PT) array. The PT array is immobilized on the floor together with a photo scattering plate made of glass, whereas the laser light source is separately immobilized on the ceiling. The photo scattering plate is placed in front of the PT array and distributes the laser beam on the multiple PTs. The relative displacement between the ceiling and the floor is estimated by the distribution of the PT output voltages, and the displacement is estimated with a resolution finer than the interval between the PTs. The accuracy of the relative displacement sensor (RDS) is experimentally assessed by conducting a shaking table test exhibiting several waves from harmonic sinusoidal waves to real seismic waves. We discuss the feasibility of real-time monitoring system utilizing this sensor. © 2010 Institute of Electrical Engineers of Japan. Published by John Wiley &amp
    Sons, Inc.

    DOI

    Scopus

    25
    Citation
    (Scopus)
  • An experimental study on relative displacement sensing using phototransistor array for building structures

    Kiyoshi Kanekawa, Iwao Matsuya, Maya Sato, Ryota Tomishi, Motoichi Takahashi, Satoru Miura, Yasutsugu Suzuki, Tomohiko Hatada, Ryuta Katamura, Yoshihiro Nitta, Takashi Tanii, Shuichi Shoji, Akira Nishitani, Iwao Ohdomari

    IEEJ Transactions on Electrical and Electronic Engineering   5 ( 2 ) 251 - 255  2010

     View Summary

    We propose a novel sensor for directly measuring the relative displacement of a building structure. The sensor is composed of a laser light source and a phototransistor (PT) array. The PT array is immobilized on the floor together with a photo scattering plate made of glass, whereas the laser light source is separately immobilized on the ceiling. The photo scattering plate is placed in front of the PT array and distributes the laser beam on the multiple PTs. The relative displacement between the ceiling and the floor is estimated by the distribution of the PT output voltages, and the displacement is estimated with a resolution finer than the interval between the PTs. The accuracy of the relative displacement sensor (RDS) is experimentally assessed by conducting a shaking table test exhibiting several waves from harmonic sinusoidal waves to real seismic waves. We discuss the feasibility of real-time monitoring system utilizing this sensor. © 2010 Institute of Electrical Engineers of Japan. Published by John Wiley &amp
    Sons, Inc.

    DOI

    Scopus

    25
    Citation
    (Scopus)
  • Green tea epigallocatechin gallate exhibits anticancer effect in human pancreatic carcinoma cells via the inhibition of both focal adhesion kinase and insulin-like growth factor-I receptor

    Yuko Sato, Hoang Anh Vu, Yuuichi Beppu, Hoang Thanh Chi, Kousuke Sasaki, Hideaki Yamamoto, Phan Thi Xinh, Takashi Tanii, Yukihiko Hara, Toshiki Watanabe, Iwao Ohdomari

    Journal of Biomedicine and Biotechnology   2010  2010

     View Summary

    The exact molecular mechanism by which epigallocatechin gallate (EGCG) suppresses human pancreatic cancer cell proliferation is unclear. We show here that EGCG-treated pancreatic cancer cells AsPC-1 and BxPC-3 decrease cell adhesion ability on micro-pattern dots, accompanied by dephosphorylations of both focal adhesion kinase (FAK) and insulin-like growth factor-1 receptor (IGF-1R) whereas retained the activations of mitogen-activated protein kinase and mammalian target of rapamycin. The growth of AsPC-1 and BxPC-3 cells can be significantly suppressed by EGCG treatment alone in a dose-dependent manner. At a dose of 100M which completely abolishes activations of FAK and IGF-1R, EGCG suppresses more than 50 of cell proliferation without evidence of apoptosis analyzed by PARP cleavage. Finally, the MEK1/2 inhibitor U0126 enhances growth-suppressive effect of EGCG. Our data suggests that blocking FAK and IGF-1R by EGCG could prove valuable for targeted therapy, which can be used in combination with other therapies, for pancreatic cancer. Copyright © 2010 Hoang Anh Vu et al.

    DOI PubMed

    Scopus

    42
    Citation
    (Scopus)
  • Green Tea Epigallocatechin Gallate Exhibits Anticancer Effect in Human Pancreatic Carcinoma Cells via the Inhibition of Both Focal Adhesion Kinase and Insulin-Like Growth Factor-I Receptor

    Hoang Anh Vu, Yuuichi Beppu, Hoang Thanh Chi, Kousuke Sasaki, Hideaki Yamamoto, Phan Thi Xinh, Takashi Tanii, Yukihiko Hara, Toshiki Watanabe, Yuko Sato, Iwao Ohdomari

    JOURNAL OF BIOMEDICINE AND BIOTECHNOLOGY    2010  [Refereed]

     View Summary

    The exact molecular mechanism by which epigallocatechin gallate (EGCG) suppresses human pancreatic cancer cell proliferation is unclear. We show here that EGCG-treated pancreatic cancer cells AsPC-1 and BxPC-3 decrease cell adhesion ability on micropattern dots, accompanied by dephosphorylations of both focal adhesion kinase (FAK) and insulin-like growth factor-1 receptor (IGF-1R) whereas retained the activations of mitogen-activated protein kinase and mammalian target of rapamycin. The growth of AsPC-1 and BxPC-3 cells can be significantly suppressed by EGCG treatment alone in a dose-dependent manner. At a dose of 100 mu M which completely abolishes activations of FAK and IGF-1R, EGCG suppresses more than 50% of cell proliferation without evidence of apoptosis analyzed by PARP cleavage. Finally, the MEK1/2 inhibitor U0126 enhances growth-suppressive effect of EGCG. Our data suggests that blocking FAK and IGF-1R by EGCG could prove valuable for targeted therapy, which can be used in combination with other therapies, for pancreatic cancer.

    DOI

    Scopus

    42
    Citation
    (Scopus)
  • Single-Molecule Imaging of 1:2 Groel-Groes Complexes in Zero-Mode Waveguides

    Tomoya Sameshima, Taro Ueno, Junichi Wada, Ryo Iizuka, Mutsuko Aoki, Naonobu Shimamoto, Iwao Ohdomari, Takashi Tanii, Takashi Funatsu

    BIOPHYSICAL JOURNAL   98 ( 3 ) 34A - 34A  2010.01  [Refereed]

  • 1P-071 Single molecule fluorescence imaging of GroEL-GroES interaction in zero-mode waveguides(Protein:Measurement & Analysis, The 47th Annual Meeting of the Biophysical Society of Japan)

    Sameshima Tomoya, Ueno Taro, Wada Jun-ichi, Aoki Mutsuko, Iizuka Ryo, Shimamoto Naonobu, Ohdomari Iwao, Tanii Takashi, Funatsu Takashi

    Seibutsu Butsuri   49   S74  2009

    DOI CiNii

  • 2P-126 Real time imaging of tRNA dynamics with a zero-mode waveguides during translation(The 46th Annual Meeting of the Biophysical Society of Japan)

    Uemura Sotaro, Shimizu Yoshihiro, Iizuka Ryo, Ueda Takuya, Akahori Rena, Shimamoto Naonobu, Tanii Takashi, Ohdomari Iwao, Puglisi Joseph, Funatsu Takashi

    Seibutsu Butsuri   48   S94 - S95  2008

    DOI CiNii

  • 3P331 Single molecule imaging of chaperonin functions using zero-mode waveguides(Bioimaging,Poster Presentations)

    Ueno Taro, Tanii Takashi, Shimamoto Naonobu, Miyake Takeo, Sonobe Hironori, Akahori Reina, Funatsu Takashi, Odomari Iwao

    Seibutsu Butsuri   47   S285  2007

    DOI CiNii

  • Analysis of electron beam sensitivity of self-assembled monolayer resist depending on terminal group

    K. Kato, T. Miyake, Y. Beppu, T. Tanii, T. Ohdomari

    MICROPROCESSES AND NANOTECHNOLOGY 2007, DIGEST OF PAPERS     60 - 61  2007  [Refereed]

  • 1P542 Single molecule imaging of chaperonin functions using zero-mode waveguides(26. Single molecule biophysics,Poster Session,Abstract,Meeting Program of EABS & BSJ 2006)

    Ueno Taro, Tanii Takashi, Shimamoto Naonobu, Miyake Takeo, Sonobe Hironori, Odomari Iwao, Funatsu Takashi

    Seibutsu Butsuri   46 ( 2 ) S282  2006

    DOI CiNii

  • Enhancement of field emission characteristics of tungsten emitters by single-walled carbon nanotube modification

    D. Ferrer, T. Tanii, I. Matsuya, G. Zhong, S. Okamoto, H. Kawarada, T. Shinada, I. Ohdomari

    Applied Physics Letters   88 ( 3 ) 1 - 3  2006

     View Summary

    We present a simple method for improving the field emission performance of tungsten-tip electron sources based on single-walled carbon nanotube (SWCNT) modification. By coating a sandwich-like thin film of Al-Fe-Al (with Fe as a catalyst) on a tungsten tip, SWCNTs were synthesized at 600°C in a chemical vapor deposition (CVD) reactor. The influence of CNT modification on the electron emission characteristics of the emitters was investigated by means of a triode structure. We have found that CNT-modified tungsten tips exhibit low threshold-voltage for electron emission, and improved emission-current stability, compared with nonmodified and Al-Fe-Al-coated needles. © 2006 American Institute of Physics.

    DOI

    Scopus

    24
    Citation
    (Scopus)
  • 1P088 Single molecule imaging of bio-molecular interactions using nano apertures

    Ueno T., Tanii T., Shimamoto N., Miyake T., Odomari I., Shoji S., Funatsu T.

    Seibutsu Butsuri   44   S51  2004

    DOI CiNii

  • Fabrication of Adenosine Triphosphate-Molecule Recognition Chip by Means of Bioluminous Enzyme Luciferase Jpn. J. Appl. Phys. 40, 2001, L1135.

    T.Tanii, T.Goto, T.Iida, M.Koh-Masahara, I.Ohdomari

    Japanese Journal of Applied Physics   40 ( 10 ) L1135 - L1137  2001

     View Summary

    We have succeeded in detecting the adenosine triphosphate (ATP) concentration in a solution quantitatively using an ATP-molecule recognition chip. The ATP-molecule recognition chip is composed of a silicon photodiode on which bioluminous enzyme luciferase is immobilized. When the chip was immersed in an ATP-containing solution, the luciferase emitted light and the photoinduced current detected by the photodiode was in proportion to the ATP concentration. We found that the photoinduced current fits the Michaelis-Menten plot. These results indicate that the luciferase is successfully immobilized on the silicon chip without losing the bioluminous activity and that the proposed device enables us to detect the ATP concentration in a solution by measuring the photoinduced current.

    DOI CiNii

  • Nucleation and growth of Cu clusters on highly oriented pyrolytic graphite observed with an in situ electrochemical scanning tunneling microscope

    T Tanii, K Hara, K Ishibashi, K Ohta, Ohdomari, I

    APPLIED SURFACE SCIENCE   162   662 - 665  2000.08  [Refereed]

     View Summary

    Using an electrochemical scanning tunneling microscope (ECSTM), we have observed nucleation and growth of Cu clusters on highly oriented pyrolytic graphite (HOPG). In situ observations were made at different sample potentials. Firstly, preliminary images were obtained at the sample potential where Cu did not precipitate. Then, we obtained images at the sample potential where Cu deposition was observed. We found superperiodic structures on the top graphite layer and Cu clusters of about 2 nm in diameter formed along the step-edge with a constant interval. The interval between clusters had a same periodicity as that of the superperiodic structure. Namely, the superperiodic structure on the top graphite layer induced nucleation of Cu along the step-edge. (C) 2000 Elsevier Science B.V. All rights reserved.

  • Single-ion detection using nuclear track detector CR-39 plastic

    K Hara, M Koh, T Matsukawa, T Tanii, Ohdomari, I

    REVIEW OF SCIENTIFIC INSTRUMENTS   70 ( 12 ) 4536 - 4538  1999.12  [Refereed]

     View Summary

    We have developed a technique for detecting single-ions that uses CR-39 plastic. Chemical etching of the plastic enables us to visualize both the incident sites and the existence of the single-ion incidences as etch pits. Using this technique, we obtained a singularity rate of 88.3%. (C) 1999 American Institute of Physics. [S0034-6748(99)00711-X].

  • Nucleation and growth of Cu adsorbates on hydrogen-terminated Si(111) surface in solution

    K Hara, T Tanii, Ohdomari, I

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   38 ( 12A ) 6860 - 6863  1999.12  [Refereed]

     View Summary

    We report, for the first time, the behavior of Cu nucleation and growth on hydrogen- (H-) terminated Si(111) surface in solution. The samples were prepared by immersing H-terminated Si(111) surfaces in Cu-containing sulfuric acid solution with various immersion times. The Cu-adsorbed silicon surfaces were observed with an atomic force microscope (AFM). Statistical analysis of the AFM images indicates that Cu nucleation occurred immediately after immersing into the solution, and the coverage of the surfaces with Cu adsorbates increased linearly with immersion time although the average height increased negligibly. These results suggest that the growth behavior of Cu adsorbate on H-terminated Si(111) surfaces is fundamentally two-dimensional due to the long-range migration of Cu ions which were reduced at the silicon/solution interface.

  • Three-dimensional site dependence of single-ion-induced charge collection at a p-n junction-role of funneling and diffusion processes under different ion energy

    T Matsukawa, S Mori, T Tanii, T Arimura, M Koh, K Igarashi, T Sugimoto, Ohdomari, I

    JOURNAL OF APPLIED PHYSICS   83 ( 6 ) 3413 - 3418  1998.03  [Refereed]

     View Summary

    The amount of charges induced by high energy single ion irradiation at a p-n junction diode has been measured and its dependence on the ion incident position has been evaluated by using single-ion microprobe technique. By irradiating single He ions with various incident energy (1.4-4.05 MeV), dependence of the profiles of collected charges on the ion incident energy has been investigated. Origins of the different profiles among the different incident energy are discussed in terms of different contribution of two mechanisms of charge collection, namely, field funneling and diffusion of carriers. In the case of the ion incidence within the junction area, dependence of the charge collection profile on the ion incident energy comes from different contribution of the funneling in the charge collection process, while difference in the collection efficiency of the diffused charges affects the profile in the case of the ion incidence at outside of the junction. (C) 1998 American Institute of Physics.

  • Evaluation of soft-error hardness of DRAMs under quasi-heavy ion irradiation using he single ion microprobe technique

    T Matsukawa, S Mori, T Tanii, T Arimura, M Koh, K Igarashi, T Sugimoto, Ohdomari, I

    IEEE TRANSACTIONS ON NUCLEAR SCIENCE   43 ( 6 ) 2849 - 2855  1996.12  [Refereed]

     View Summary

    Soft-error immunity of a 256kbit DRAM against quasi-heavy ion irradiation has been evaluated using He single ion microprobe at Waseda University. The technique for hitting micron size area with arbitrary number of He ions enables us to simulate the space environment under irradiation of heavy ions with higher LET than that of alpha-particles. From the maps of error-sensitive sites obtained by irradiating various number of He ions, the threshold LET of soft-errors, effect of diffused charges on the soft-error cross section, and susceptibility to multi-bit errors have been estimated. The results of measuring single-ion induced noise charges at the PN junction which is considered as equivalent to the storage node of the DRAM have been presented and the origins which determine the soft-error immunity under irradiation with various LET have been discussed.

  • Radiation immunity of pMOSFETs and nMOSFET examined by means of MeV He single ion microprobe

    M Koh, K Horita, B Shigeta, T Matsukawa, A Kishida, T Tanii, S Mori, Ohdomari, I

    APPLIED SURFACE SCIENCE   104   364 - 368  1996.09  [Refereed]

     View Summary

    Radiation effects induced by MeV He single ions in pMOSFETs and nMOSFETs in commercially available CMOS4007 have been studied extensively. The key results from this study are: (1) pMOSFETs are more fragile than nMOSFETs in terms of threshold voltage shift, (2) nMOSFETs are more susceptible than pMOSFETs to the degradation of subthreshold swing. The different features in the radiation effects have been discussed comprehensively.

  • Nonscalability of alpha-particle-induced charge collection area

    T Tanii, T Matsukawa, S Mori, M Koh, B Shigeta, K Igarashi, Ohdomari, I

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS   35 ( 6A ) L688 - L690  1996.06  [Refereed]

     View Summary

    The scalability of alpha-particle-induced soft errors has been evaluated. We have irradiated individual sites in and near a PN-junction area with single alpha particles and measured the charge collected at the junction. As the PN-junction size is reduced, the charge collected by diffusion upon the incidence of alpha particles at the outer area around the junction increases relative to the charge collected upon direct incidence at the junction area. This suggests that the soft-error-sensitive area is not scaled down even if memory cell size is reduced.

  • Quantitative investigation of localized ion irradiation effects in n-channel metal-oxide-semiconductor field-effect transistors using single ion microprobe

    M Koh, K Horita, B Shigeta, K Igarashi, T Matsukawa, T Tanii, S Mori, Ohdomari, I

    APPLIED PHYSICS LETTERS   68 ( 24 ) 3467 - 3469  1996.06  [Refereed]

     View Summary

    Localized ion irradiation effects in n-channel metal-oxide-semiconductor field-effect transistor (n-ch MOSFET) have been investigated quantitatively by means of both the single ion microprobe (SIMP) and single ion beam induced charge (SIBIC) imaging. An extremely large leakage current in the subthreshold gate voltage V-g-drain current I-d characteristics (V-g < threshold voltage V-th) have been induced by exposing a small fraction of the MOSFET gate area to MeV He single ions, while the turn-on V-g-I-d characteristics (V-g > V-th) have scarcely been affected. The causes of the large leakage current in the subthreshold region induced by the localized ion irradiation have been discussed. (C) 1996 American Institute of Physics.

  • Quantitative analysis of radiation induced Si/SiO2 interface defects by means of MeV He single ion irradiation

    M Koh, B Shigeta, K Igarashi, T Matsukawa, T Tanii, S Mori, Ohdomari, I

    APPLIED PHYSICS LETTERS   68 ( 11 ) 1552 - 1554  1996.03  [Refereed]

     View Summary

    Generation rates of Si/SiO2 interface defects, namely, the oxide trapped holes and the interface states, by MeV He single ion irradiation have been investigated quantitatively. From the analysis of threshold voltage shifts induced by single ions of 2 MeV He, the number of the oxide trapped holes and the interface states induced in an n-ch MOSFET in CMOS4007 by a single ion have been estimated to be about 28 and 9, respectively. The hole trapping efficiency is almost 100% at the ion dose below 1 ions/mu m(2). (C) 1996 American Institute of Physics.

  • TOTAL-DOSE DEPENDENCE OF SOFT-ERROR HARDNESS IN 64KBIT SRAMS EVALUATED BY SINGLE-ION MICROPROBE TECHNIQUE

    T MATSUKAWA, A KISHIDA, T TANII, M KOH, K HORITA, K HARA, B SHIGETA, M GOTO, S MATSUDA, S KUBOYAMA, OHDOMARI, I

    IEEE TRANSACTIONS ON NUCLEAR SCIENCE   41 ( 6 ) 2071 - 2076  1994.12  [Refereed]

     View Summary

    Total dose effect on the soft-error susceptibility of 64kbit CMOS SRAM has been investigated by using the single ion microprobe technique which enables us to get a map of soft-error sensitivity in a memory cell by hitting a micron-size area with single ions. The effects of the ion dose on the susceptibility of each error-sensitive site have been evaluated. The errors due to the upset of p-MOSFETs have become more susceptible at higher dose while that of the n-MOSFETs less susceptible. One of the origins of the errors are the negative threshold voltage(V-th) shifts of the MOSFETs which are caused by oxide trapped charges. Displacement damage induced by ion irradiation also affects the susceptibility to the soft-error.

  • REVERSE-MODE SINGLE-ION BEAM-INDUCED CHARGE (R-MODE SIBIC) IMAGING FOR THE TEST OF TOTAL-DOSE EFFECTS IN N-CH METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR (MOSFET)

    M KOH, K HARA, K HORITA, B SHIGETA, T MATSUKAWA, A KISHIDA, T TANII, M GOTO, OHDOMARI, I

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS   33 ( 7A ) L962 - L965  1994.07  [Refereed]

     View Summary

    To achieve quantitative analysis of site-dependent total dose effects in metal-oxide-semiconductor field-effect transistors (MOSFETs), a new imaging technique designated as the reverse-mode single ion beam induced charge (R-mode SIBIC) imaging for sample positioning combined with accurate ion counting has been developed using the single-ion microprobe. With only five He single ions per pixel, we have succeeded in obtaining images of n-ch MOSFET and n-type Si regions fabricated on a p-well without any degradation of device characteristics. The R-mode SIBIC imaging has made it possible to count exactly the number of ions incident upon the MOSFET during radiation hardness tests.

  • DEVELOPMENT OF THE SINGLE-ION BEAM-INDUCED CHARGE (SIBIC) IMAGING TECHNIQUE USING THE SINGLE-ION MICROPROBE SYSTEM

    M KOH, K HARA, K HORITA, B SHIGETA, T MATSUKAWA, A KISHIDA, T TANII, M GOTO, OHDOMARI, I

    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS   93 ( 1 ) 82 - 86  1994.07  [Refereed]

     View Summary

    In order to minimize image degradation of IBIC (ion beam induced charge) during observation, the single ion beam induced charge (SIBIC) imaging technique has been developed by using a single ion microprobe, which enables us to hit a particular site of a device with single ions one by one. With only five He single ions per pixel, we have succeeded in obtaining reasonable quality images of an active area of a device. Since the number of defects induced by five single ions is quite low, the irradiated device was still alive for subsequent process and device diagnoses.

  • Nitrogen-Terminated Diamond Surface for Nanoscale NMR by Shallow Nitrogen-Vacancy Centers

    S. Kawai, H. Yamano, T. Sonoda, K. Kato, J. Buendia, T. Kageura, R. Fukuda, T. Okada, T. Tanii, T. Higuchi, M. Haruyama, K. Yamada, S. Onoda, T. Ohshima, W. Kada, O. Hanaizumi, A. Stacey, T. Teraji, S. Kono, J. Isoya, H. Kawarada

    J. Phys. Chem. C 123 (2019) 3594  

  • GeVn complexes for silicon-based room-temperature single-atom nanoelectronics

    S. Achilli, N. Manini, G. Onida, T. Shinada, T. Tanii, E. Prati

    Sci. Rep. 8 (2018) 18054  

  • Impact of modular organization on dynamical richness in cortical networks

    H. Yamamoto, S. Moriya, K. Ide, T. Hayakawa, H. Akima, S. Sato, S. Kubota, T. Tanii, M. Niwano, S. Teller, J. Soriano, A. Hirano-Iwata

    Science Advances 4 (2018) eaau4914  

  • LithographicallyEngineeredShallowNitrogen-VacancyCentersinDiamondforExternalNuclearSpinSensing

    R.Fukuda, P.Balasubramanian, I.Higashimata, G.Koike, T.Okada, R.Kagami, T.Teraji, S.Onoda, M.Haruyama, K.Yamada, M.Inaba, H.Yamano, F.Stürner, S.Schmitt, L.P.McGuinness, F.Jelezko, T.Ohshima, T.Shinada, H.Kawarada, W.Kada, O.Hanaizumi, T.Tanii, J.Isoya

    New.J.Phys.20(2018)083029  

  • Insitumodificationofcell-culturescaffoldsbyphotocatalysisofvisible-light-responsiveTiO2film

    S.Kono, K.Furusawa, A.Kurotobi, K.Hattori, H.Yamamoto, A.Hirano-Iwata, T.Tanii

    Jpn.J.Appl.Phys.57(2018)027001,1-5.  

  • Room-temperature1.54ƒÊmphotoluminescencefromEr:Oxcentersatextremelylowconcentrationinsilicon

    M.Celebrano, L.Ghirardini, M.Finazzi, Y.Shimizu, Y.Tu, K.Inoue, Y.Nagai, T.Shinada, Y.Chiba, A.Abderghafar, M.Yano, T.Tanii, E.Prati

    Opt.Lett.42(2017)3311.  

  • Atomprobetomographicassessmentofthedistributionofgermaniumatomsimplantedinasiliconmatrixthroughnano-apertures

    Y.Tu,B.Han, Y.Shimizu, K.Inoue, Y.Fukui, M.Yano, T.Tanii, T.Shinada, Y.Nagai

    Nanotechnology28(2017)385301.  

  • Effectofaradicalexposurenitridationsurfaceonthechargestabilityofshallownitrogen-vacancycentersindiamond

    T.Kageura, K.Kato, H.Yamano, E.Suaebah, M.Kajiya, S.Kawai, M.Inaba, T.Tanii, M.Haruyama, K.Yamada, S.Onoda, W.Kada, O.Hanaizumi, T.Teraji, J.Isoya, S.Kono, H.Kawarada

    Phys.Express10(2017)055503  

  • Identificationofyielddriftdeformationsandevaluationofthedegreeofdamagethroughthedirectsensingofdriftdisplacements

    P.Xiang, A.Nishitani, S.Marutani, K.Kodera, T.Hatada, R.Katamura, K.Kanekawa, T.Tanii

    EARTHQUAKEENGINEERING&STRUCTURALDYNAMICS45(2016)2085-2102.  

  • "Live-cell,label-freeidentificationofGABAergicandnon-GABAergicneuronsinprimarycorticalculturesusingmicropatternedsurface"

    S.Kono, H.Yamamoto, T.Kushida, A.Hirano-Iwata, M.Niwano, T.Tanii

    PLOSONE11(2016)e0160987.  

  • "Size-dependentregulationofsynchronizedactivityinlivingneuronalnetworks"

    H.Yamamoto, S.Kubota, Y.Chida, M.Morita, S.Moriya, H.Akima, S.Sato, A.Hirano-Iwata, T.Tanii, M.Niwano

    Phys.Rev.E94(2016)012407.  

  • Deterministicdopingtosiliconanddiamondmaterialsforquantumprocessing.InNanotechnology(IEEE-NANO)

    Shinada,T.Prati, T.Tanii, T.Teraji, T.Onoda, S.Jelezko, F.&Isoya, August

    2016IEEE16thInternationalConferenceon(pp.888-890).IEEE.  

  • 光触媒作用を用いた液中表面改質による培養神経細胞の操作

    山本英明, 平野愛弓, 谷井孝至, 庭野道夫

    表面科学37,224-229(2016).  

  • Quantitativecomparisonofcancerandnormalcelladhesionusingorganosilanemonolayertemplates:Anexperimentalstudyontheanti-adhesioneffectofgreen-teacatechins

    R.Sakamoto, E.Kakinuma, K.Masuda, Y.Takeuchi, K.Ito, K.Iketaki, T.Matsuzaki, S.Nakabayashi, H.Y.Yoshikawa, H.Yamamoto, Y.Sato, T.Tanii

    InVitroCell.Dev.Biol.-Animal52(2016)799-805.  

  • QuantitativeEvaluationofCancerCellAdhesiontoSelf-AssembledMonolayer-PatternedSubstratesbyReflectionInterferenceContrastMicroscopy,

    T.Matsuzaki, K.Ito, K.Masuda, E.Kakinuma, R.Sakamoto, K.Iketaki, H.Yamamoto, M.Suganuma, N.Kobayashi, S.Nakabayashi, T.Tanii, H.Yoshikawa

    J.Phys.Chem.B120(2016)1221.  

  • Neuraminidase-dependentDegradationofPolysialicAcidIsRequiredfortheLaminationofNewlyGeneratedNeurons

    M.Sajo, H.Sugiyama, H.Yamamoto, T.Tanii, N.Matsuki, Y.Ikegaya, R.Koyama

    PLOSONE11(2016)e0146398.  

  • PhotopatterningProteinsandCellsinAqueousEnvironmentusingTiO2Photocatalysis

    H.Yamamoto, T.Demura, K.Sekine, S.Kono, M.Niwano, A.Hirano-Iwata, T.Tanii

    JournalofVisualizedExperiments104(2015)  

  • Driftdisplacementdatabasedestimationofcumulativeplasticdeformationratiosforbuildings

    A.Nishitani, C.Matsui, Y.Hara, P.Xiang, Y.Nitta, T.Hatada, R.Katamura, I.Matsuya, T.Tanii

    SmartStructuresandSystems15,881(2015).  

  • FluorescencePolarizationSwitchingfromaSingleSiliconVacancyColourCentreinDiamond

    Tamura,Takashi Tanii, TokuyukiTeraji, ShinobuOnoda, TakeshiOhshima, JunichiIsoya, TakahiroShinada,EWu,HepingZeng

    ScientificReports5,12244(2015).  

  • SurfaceModificationofCellScaffoldinAqueousSolutionUsingTiO2PhotocatalysisandLinkerProteinL2forPatterningPrimaryNeurons

    KoheiSekine,HideakiYamamoto, ShoKono,TakeshiIkeda, AkioKuroda, Takashi Tanii

    e-JournalofSurfaceScienceandNanotechnologyVol.13,213-218(2015).  

  • Arrayofbrightsilicon-vacancycentersindiamondfabricatedbylow-energyfocusedionbeamimplantation

    SyutoTamura, GodaiKoike, AkiraKomatsubara,TokuyukiTeraji, ShinobuOnoda,LiamP.McGuinness, LachlanRogers, BorisNaydenov,E.Wu,LiuYan, FedorJelezko, TakeshiOhshima, JunichiIsoya, TakahiroShinada, Takashi Tanii

    Appl.Phys.Express7,115201(2014).  

  • Insitumodificationofcell-culturescaffoldsbyphotocatalyticdecompositionoforganosilanemonolayers

    HideakiYamamoto, TakanoriDemura, MayuMorita, ShoKono, KoheiSekine, TakahiroShinada, ShunNakamura, Takashi Tanii

    Biofabrication6(2014)035021(8pp).  

  • AnExperimentalStudyonSimultaneousMeasurementofRelativeDisplacementandLocalInclinationAngle

    I.Matsuya, K.Katamura, K.Ihara, T.Tanii, Y.Nitta, A.Nishitani

    AIJJ.Technol.Des.19(2013)951-954.  

  • Improvingzero-modewaveguidestructureforenhancingsignal-to-noiseratioofreal-timesingle-moleculefluorescenceimaging

    T.Tanii, R.Akahori, S.Higano, K.Okubo, H.Yamamoto, T.Ueno, T.Funatsu

    Acomputationalstudy,Phys.Rev.E88(2013)012727.  

  • Differentialneuriteoutgrowthisrequiredforaxonspecificationbyculturedhippocampalneurons

    H.Yamamoto, T.Demura, M.Morita, G.Banker, T.Tanii, S.Nakamura

    JournalofNeurochemistry123(2012)904-910.  

  • Reductionofthresholdvoltagefluctuationinfield-effecttransistorsbycontrollingindividualdopantposition

    M.Hori, K.Taira, A.Komatsubara, K.Kumagai, Y.Ono, T.Tanii, T.Endoh, T.Shinada

    Appl.Phys.Lett.101,013503(2012).  

  • Developmentof5-DOFRelative-StoryDisplacementSensorforStructuralHealthMonitoring

    I.Matsuya, R.Katamura, M.Iba, H.Kondo, K.Kanekawa, T.Hatada, Y.Nitta, T.Tanii, S.Shoji, A.Nishitani, I.Ohdomari

    TransactionsoftheJapanSocietyofMechanicalEngineersC78,(2012)1451-1459  

  • Quantumtransportindeterministicallyimplantedsingle-donorsinSiFETs

    T.Shinada, M.Hori, F.Guagliardo, G.Ferrari, A.Komatubara, K.Kumagai, T.Tanii, T.Endo, Y.OnoandE.Prati

    IEDMTech.Dig.(2011)697-700  

  • Single-moleculestudyonthedecayprocessofthefootball-shapedGroEL-GroEScomplexusingzero-modewaveguides

    T.Sameshima, R.Iizuka, T.Ueno, J.Wada, M.Aoki, N.Shimamoto, I.Ohdomari, T.Tanii, T.Funatsu

    TheJournalofBiologicalChemistry285(2010)23159  

  • Developmentofnoncontact-typerelativestorydisplacementmonitoringsystem

    I.Matsuya, R.Tomishi, M.Sato, K.Kanekawa, M.Takahashi, S.Miura, Y.Suzuki, T.Hatada, M.Oshio, R.Katamura, Y.Nitta, T.Tanii, S.Shoji, A.Nishitani, dI.Ohdomari

    ProceedingsofThe5thANCRiSST,2010,550  

  • PerformanceevaluationofMOSFETswithdiscretedopantdistributionbyone-by-onedopingmethod

    T.Shinada, M.Hori, Y.Ono, K.Taira, A.Komatsubara, T.Tanii, T.Endoh, I.Ohdomari

    Proc.SPIEAdvancedLithography,2010  

  • In-situ guidance of individual neuronal processes by wet femtosecond-laser processing of self-assembled monolayers

    H.Yamamoto, K.Okano, T.Demura, Y.Hosokawa, H.Masuhara, T.Tanii, S.Nakamura

    Appl. Phys. Lett. 99 (2011) 163701  

  • Impact of a few Dopant Positions Controlled by Deterministic Single-Ion Doping on the Transconductance of Field-Effect Transistors

    M.Hori, T.Shinada, Y.Ono, A.Komatsubara, K.Kumagai, T.Tanii, T.Endoh, I.Ohdomari

    Appl. Phys. Lett. 99 (2011) 062103  

  • A Relative-Story Displacement Sensor for Structural Health Monitoring Capable of Measuring the Local Inclination Angle and the Relative Displacement

    I.Matsuya, R.Katamura, M.Sato, H.Kondo, M.Iba, K.Kanekawa, Y.Nitta, T.Tanii, S.Shoji, A.Nishitani, I.Ohdomari

    Transactions of the Japan Society of Mechanical Engineers Part A 77 (2011) 736  

  • Application of Organosilane Monolayer Template to Quantitative Evaluation of Cancer Cell Adhesive Ability

    T.Tanii, K.Sasaki, K.Ichisawa, T.Demura, Y.Beppu, H.A.Vu, H.T.Chi, H.Yamamoto, Y.Sato

    Jpn. J. Appl. Phys. 50 (2011) 06GL01  

  • Enhancing Single-Ion Detection Efficiency by Applying Substrate Bias Voltage for Deterministic SIngle-Ion Doping

    M.Hori, T.Shinada, K.Taira, A.Komatsubara, Y.Ono, T.Tanii, T.Endoh, I.Ohdomari

    Applied Physics Express 4 (2011) 046501  

  • Fabrication of Zero-Mode Waveguide by Ultraviolet Nanoimprint Lithography Lift-Off Process

    J.Wada, S.Ryu, Y.Asano, T.Ueno, T.Funatsu, T.Yukawa, J.Mizuno, T.Tanii

    Jpn. J. Appl. Phys. 50 (2011) 06GK07  

  • Relative-Story Displacement Sensor for Structural Health Monitoring Capable of Measuring the Local Inclination Angle and the Relative Displacement

    I.Matsuya, R.Katamura, M.Sato, H.Kondo, M.Iba, K.Kanekawa, Y.Nitta, T.Tanii, S.Shoji, A.Nishitanim, I.Ohdomari

    Transactions of the Japan Society of Mechanical Engineers A 77, 2011, in press  

  • Noncontact-type relative displacement monitoring system using position sensitive detector

    I.Matsuya, M.Oshio, R.Tomishi, M.Sato, K.Kanekawa, M.Takahashi, S.Miura, Y.Suzuki, T.Hatada, R.Katamura, Y.Nitta, T.Tanii, S.Shoji, A.Nishitani, I.Ohdomari

    AIJ Journal of Technology and Design 16, 2010, 469-472  

  • Measuring Relative-Story Displacement and Local Inclination Angle Using Multiple Position-Sensitive Detectors

    I.Matsuya, R.Katamura, M.Sato, M.Iba, H.Kondo, K.Kanekawa, M.Takahashi, T.Hatada, Y.Nitta, T.Tanii, S.Shoji, A.Nishitani, I.Ohdomari

    Sensors 10, 2010, 9687-9697  

  • An Optical Lateral-Displacement Sensor for Measuring the Interstory of a Building

    I.Matsuya, R.Tomishi, M.Sato, K.Kanekawa, T.Hatada, Y.Nitta, T.Tanii, S.Shoji, A.Nishitani, I.Ohdomari

    proceedings of Fifth World Structural Control and Monitoring  

  • Single-molecule study on the decay process of the football-shaped GroEL-GroES complex using zero-mode waveguides

    T.Sameshima, R.Iizuka, T.Ueno, J.Wada, M.Aoki, N.Shimamoto, I.Ohdomari, T.Tanii, T.Funatsu

    The Journal of Biological Chemistry 285 (2010) 23159  

  • An Experimental Study on Interstory Displacement Measurement Using Phototransistor Array

    K.Kanekawa, I.Matsuya, M.Sato, R.Tomishi, M.Takahash, S.Miura, Y.Suzuki, T.Hatada, R.Katamura, Y.Nitta, T.Tanii, S.Shoji, A.Nishitani, I.Ohdomari

    Proceedings of The 5th ANCRiSST, 2010, 161  

  • Development of noncontact-type relative story displacement monitoring system

    I.Matsuya, R.Tomishi, M.Sato, K.Kanekawa, M.Takahashi, S.Miura, Y.Suzuki, T.Hatada, M.Oshio, R.Katamura, Y.Nitta, T.Tanii, S.Shoji, A.Nishitani, I.Ohdomari

    Proceedings of The 5th ANCRiSST, 2010, 550  

  • Performance enhancement of semiconductor devices by control of discrete dopant distribution, Nanotechnology 20, 2009, 365205.

    M.Hori, T.Shinada, K.Taira, N.Shimamoto, T.Tanii, T.Endo, I.Ohdomari

     

  • Effect of the C-Terminal Truncation on the functional Cycle of Chaperonin GroEL, Implication that the C-Terminal Region Faciliates the Transaction from the Folding-Arrested to the Folding-Competent State, The Journal of Biological Chemistry 283, 2008,

    M.Suzuki, T.Ueno, R.Iizuka, T.Miura, T.Zako, R.Akahori, T.Miyake, N.Shimamoto, M.Aoki, T.Tanii, I.Ohdomari, T.Funatsu

     

  • Real-Time Imaging of Single-Molecule Fluorescence with a Zero-Mode Waveguide for the Analysis of Protein-Protein Interaction, Analytical Chemistry 80, 2008, 6018.

    T.Miyake, T.Tanii, H.Sonobe, R.Akahori, N.Shimamoto, T.Ueno, T.Funatsu, I.Ohdomari

     

  • Single Molecule Imaging of Chaperonin Functions Using Zero-Mode Waveguides, Biophys. J. 554A, 2007.

    T.Ueno, T.Tanii, N.Shimamoto, T.Miyake, H.Sonobe, I.Oodomari, T.Funatsu

     

  • Ultrasensitive Detection of Biomolecules Using Functionalized Multi-Walled Carbon Nanotubes, Sens. & Actuat. B 124, 2007, 161.

    P.-A.Hu, T.Tanii, G-J.Zhang, T.Hosaka, I.Ohdomari

     

  • Selectivity Improvement in Protein Nanopatterning with a Hydroxy-Terminated Self-Assembled Monolayer Template, Nanotechnology 18, 2007, 305034.

    T.Miyake, T.Tanii, T.Zako, T.Funatsu, I.Ohdomari

     

  • Protein Adsorption on Self-Assembled Monolayers Induced by Surface Water Molecule, Jpn. J. Appl. Phys. 46, 2007, 3277.

    Y.Kanari, Y.Shoji, H.Ode, T.Miyake, T.Tanii, T.Hoshino, I.Ohdomari

     

  • A Novel Approach to Au Nanoparticle-Based Identification of DNA Nanoarrays, Frontiers in Bioscience 12, 2007, 4773.

    G.-J.Zhang, T.Tanii, Y.Kanari, C.Yasumuro, T.Matsukawa, M.Masahara, I.Ohdomari

     

  • Nanometer-Sized Polyradical Particles; Organic Magnetic Dot Array Formed on a Silicon Microfabricated Substrate, Journal of Polymer Science A, 2006 521.

    M.Tanaka, S.Imai, T.Tanii, Y.Numao, N.Shimamoto, I.Ohdomari, H.Nishide

     

  • Production of Nanopatterns by a Combination of Electron Beam Lithography and a Self-Assembled Monolayer for an Antibody Nanoarray, Journal of Nanoscience and Nanotechnology 7, 2007, 410.

    G.-J.Zhang, T.Tanii, K.Yuzo, I.Ohdomari

     

  • Packing of Submeter-Sized Polysterene Particles within the Micrometer-Sized Recessed Patterns on Silicon Substrate, Science and Technology of Advanced Materials 7, 2006, 451.

    M.Tanaka, N.Shimamoto, T.Tanii, I.Ohdomari, H.Nishide

     

  • Nanopatterning of Hdroxy-Terminated Self-Assembled Monolayer Taking Advantage of Terminal Group Modification, Chemical Physics Letters 426, 2006, 361.

    T.Miyake, T.Tanii, K.Kato, T.Hosaka, Y.Kanari, H.Sonobe, I.Ohdomari

     

  • Nanoscale Patterning of Protein Using Electron Beam Lithography of Organosilane Self-Assembled Monolayers, small 1, 2005, 833.

    G.-J.Zhang, T.Tanii, T.Zako, T.Hosaka, T.Miyake, Y.Kanari, T.Funatsu, I.Ohdomari

     

  • A Novel Process for Fabrication of Gated Silicon Field Emitter Array Taking Advantage of Ion Bombardment Retarded Etching, Jpn. J. Appl. Phys. 44, 2005, 5191.

    T.Tanii, S.Fujita, Y.Numao, I.Matsuya, M.Sakairi, M.Masahara, I.Ohdomari

     

  • Hybridization of Deoxyribonucleic Acid and Immobilization of Green Fluorescent Protein on Nanostructured Organosilane Templates, Jpn. J. Appl. Phys. 44, 2005, 5851.

    T.Tanii, T.Hosaka, T.Miyake, Y.Kanari, G.-J.Zhang, T.Funatsu, I.Ohdomari

     

  • Electron Beam Lithography on Organosilane Self-Assembled Monolayer Resist, Jpn. J. Appl. Phys. 43, 2004, 4396.

    T.Tanii, T.Hosaka, T.Miyake, I.Ohdomari

     

  • Selective Deposition of Polystyrene Nano-particles in the Nanoetchpit-Array on a Silicon Substrate, Chem. Commun., 2004, 978.

    M.Tanaka, T.Hosaka, T.Tanii, I.Ohdomari, H.Nishide

     

  • Attachment of DNA to Microfabricated Arrays with Self-Assembled Monolayer, Thin Solid Films 464, 2004, 452.

    G.-J.Zhang, T.Tanii, T.Miyake, T.Funatsu, I.Ohdomari

     

  • Selective Growth of Carbon Nanostructures on Nickel Implanted Nanopyramid Array, Appl. Surf. Sci. 234, 2004, 72.

    D.Ferrer, T.Shinada, T.Tanii, J.Kurosawa, G.Zhong, Y.Kubo, S.Okamoto, H.Kawarada, I.Ohdomari

     

  • Preferential Immobilization of Biomolecules onto Silicon Microstructure Array by Means of Electron Beam Lithography onto Organosilane Self-Assembled Monolayer Resist, Appl. Surf. Sci. 234, 2004, 102.

    T.Tanii, T.Hosaka, T.Miyake, G.-J.Zhang, T.Zako, T.Funatsu, I.Ohdomari

     

  • Patterning of DNA Nanostructures on Silicon Surface by Electron Beam Lithography of Self-Assembled Monolayer, Chem. Commun., 2004 786.

    G.-J.Zhang, T.Tanii, T.Funatsu, I.Ohdomari

     

  • The immobilization of DNA on microstructured patterns fabricated by maskless lithography, Sens. & Actuat. B 97, 2004, 243.

    G.-J.Zhang, T.Tanii, T.Zako, T.Funatsu, I.Ohdomari

     

  • Fabrication of ultrathin Si Channel Wall For Vertical Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor (DG MOSFET) by Using Ion-Bombardment-Retarded Etching (IBRE), Jpn. J. Appl. Phys. 42, 2003, 1916.

    M.Masahara, T.Matsukawa, K.Ishii, Y.Liu, M.Nagao, H.Tanoue, T.Tanii, I.Ohdomari, S.Kanemaru, E.Suzuki

     

  • Novel Nanoprocess for Vertical Double-Gate MOSFET Fabrication by Ion-Bombardment-Retarded Etching, Extended Abstracts of the 2002 International Conference on Solid State Devices and Materials, 2002, 426.

    M.Masahara, T.Matsukawa, K.Ishii, Y.Liu, M.Nagao, H.Tanoue, T.Tanii, I.Ohdomari, S.Kanemaru, E.Suzuki

     

  • Simple Fabrication of Silicon Nanopyramids for High Performance Field Emitter Array, Extended Abstracts of the 2001 International Conference on Solid State Devices and Materials, 2001, 578.

    T.Tanii, T.Goto, T.Iida, M.Koh-Masahara, I.Ohdomari

     

  • Novel Process for High-Density Buried Nanopyramid Array Fabrication by Means of Dopant Ion Implantation and Wet Etching, Jpn. J. Appl. Phys. 40, 2001, 2837.

    M.Koh, T.Goto, A.Sugita, T.Tanii, T.Iida, T.Shinada, T.Matsukawa, I.Ohdomari

     

▼display all

Books and Other Publications

  • ナノテクノロジー大辞典

    2004

  • 実験化学講座

    2004

  • シングルイオン注入法を用いたナノスケール表面改質

    2002

  • 図解 ナノテクノロジーのすべて

    2001

  • とことんやさしいナノテクノロジー

    2001

Presentations

  • Self-align fabrication of nano-reservoir with NV center in diamond surface for nuclear magnetic resonance of small molecules

    Kazuto Kawakatsu, Yu Ishii, Yuki Hata, Yuta Saito, Kosuke Nakamura, Kirou Nagaoka, Takahiro Sonoda, Tetsuya, Tatsuishi, Tokuyuki Teraji, Shinobu Onoda, Taisei Higuchi, Keisuke Yamada, Takeshi Oshima, Takahiro Shinada, Hiroshi Kawarada, Wataru Kada, Osamu Hanaizumi, Junichi Isoya, Takashi Tanii

    32nd International Microprocesses and Nanotechnology Conference  (International Conference Center Hiroshima, Hiroshima, Japan) 

    Presentation date: 2019.10

  • An experimental study on the spontaneous firing of single isolated autaptic neurons using micropatterned substrates

    Honoka Takahashi, Koki Sato, Mihoko Ishida, Soichiro Oguma, Takeshi Hayakawa, Kouhei Hattori, Hideaki Yamamoto, Ayumi Hirano-Iwata, Takashi Tanii

    The 4th International Symposium on Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development  (Sendai city information & industry plaza) 

    Presentation date: 2019.10

  • A computational study on the spontaneous firing pattern of single autaptic neurons – The contribution of AMPA and NMDA current –

    Mihoko Ishida, Kouhei Hattori, Akira Nakanishi, Takeshi Hayakawa, Hideaki Yamamoto, Ayumi Hirano-Iwata, Takashi Tanii

    The 4th International Symposium on Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development  (Sendai city information & industry plaza) 

    Presentation date: 2019.10

  • Microcontact printing of scaffold proteins for engineering neuronal network functions

    Hideaki Yamamoto, Satoshi Moriya, Katsuya Ide, Takeshi Hayakawa, Hisanao Akima, Shigeo Sato, Shigeru Kubota, Michio Niwano, Sara Teller, Jordi Soriano, Takashi Tanii, Ayumi Hirano-Iwata

    The 4th International Symposium on Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development  (Sendai city information & industry plaza) 

    Presentation date: 2019.10

  • 単一NVセンター規則配列と単一細胞パターニングを用いた神経細胞回路の自発発火パターンの長期計測に向けて

    谷井孝至, 石田実穂子, 石井邑

    量子生命科学会第1回大会  (東京大学弥生講堂 一条ホールおよびアネックス) 

    Presentation date: 2019.05

  • Implantation of nitrogen compound ion beam for fabricating coupled triple Nv centers

    Shinobu Onoda, Moriyoshi Haruyama, Taisei Higuchi, Wataru Kada, Atsuya Chiba, Yoshimi Hirano, Tokuyuki Teraji, Ryuji Igarashi, Sora Kawai, Hiroshi Kawarada, Yu Ishii, Ryosuke Fukuda, Takashi Tanii, Junichi Isoya, Takeshi Ohshima, Osamu Hanaizumi

    Hasselt Diamond Workshop 2019-SBDD XXIV  (cultuurcentrum Hasselt, Hasselt, Belguim) 

    Presentation date: 2019.03

  • イオン注入による単一不純物欠陥の規則的配列形成をその応用

    谷井孝至, 品田高宏, 寺地徳之, 小野田忍, 大島武, McGuuinness Liam, Jelezko Fedor, Liu Yan, Wu E, 加田渉, 花泉修, 川原田洋, 磯谷順一  [Invited]

    第66回応用物理学会春季学術講演会  (東京工業大学大岡山キャンパス) 

    Presentation date: 2019.03

  • 高被覆率窒素終端(111)ダイヤモンドの作製

    立石 哲也, 薗田 隆弘, 河合 空, 山野 颯, Jorge J. Buendia, 蔭浦 泰資, 石井 邑, 永岡 希朗, 福田 諒介, 谷井 孝至, 春山 盛善, 山田 圭介, 小 野田 忍, 加田 渉, 花泉 修, Alastair Stacey, 神田 一浩, 上村 雅治, 寺地 徳之, 磯谷 順一, 河野 省 三, 川原田 洋

    第66回応用物理学会春季学術講演会  (東京工業大学大岡山キャンパス) 

    Presentation date: 2019.03

  • C5N4Hnイオン注入による双極子結合したNVセンターの 形成

    春山 盛善, 小野田 忍, 樋口 泰成, 加田 渉, 千 葉 敦也, 平野 貴美, 寺地 徳之, 五十嵐 龍治, 河合 空, 川原田 洋, 石井 邑, 福田 諒介, 谷井 孝至, 磯谷 順一, 大島 武, 花泉 修

    第66回応用物理学会春季学術講演会  (東京工業大学大岡山キャンパス) 

    Presentation date: 2019.03

  • ダイヤモンド中単一NVセンターのパルス光磁気共鳴測 定のためのローエンドFPGAへのフォトンカウンタの実装

    永岡 希朗, 畑 雄貴, 川勝 一斗, 石井 邑, 福田 諒 介, 寺地 徳之, 小野田 忍, 大島 武, 品田 高宏, 川 原田 洋, 磯谷 順一, 谷井 孝至

    第66回応用物理学会春季学術講演会  (東京工業大学大岡山キャンパス) 

    Presentation date: 2019.03

  • Computational modeling of spontaneous firing patterns generated by single autaptic neurons

    Kouhei. Hattori, Takeshi Hayakawa, Akira Nakanishi, Mihoko Ishida, Hideaki Yamamoto, Ayumi Hirano-Iwata, Takashi Tanii

    The 7th RIEC International Symposium on Brain Functions and Brain Computer  (東北大学) 

    Presentation date: 2019.02

  • An experimental study on spontaneous firing of a single neuron on micropatterned substrates

    Koki Sato, Takahiro Nakane, Honoka Takahashi, Kouhei Hattori, Hideaki Yamamoto, Ayumi Hirano-Iwata, Takashi Tanii

    The 7th RIEC International Symposium on Brain Functions and Brain Computer  (東北大学) 

    Presentation date: 2019.02

  • Surface modification with visible-light-responsible TiO2 thin film

    Atsushi Kurotobi, Sho Kono, Takayuki Ichikawa, Hideaki Yamamoto, Ayumi Hirano-Iwata, Tanii Takashi

    The 7th RIEC International Symposium on Brain Functions and Brain Computer  (東北大学) 

    Presentation date: 2019.02

  • Fabrication of coupled Nv centers by adenine ion beam implantation

    Shinobu Onoda, Moriyoshi Haruyama, Taisei Higuchi, Wataru Kada, Atsuya Chiba, Yoshimi Hirano, Tokuyuki Teraji, Ryuji Igarashi, Sora Kawai, Hiroshi Kawarada, Yu Ishii, Ryosuke Fukuda, Takashi Tanii, Junichi Isoya, Takeshi Ohshima, Osamu Hanaizumi

    The 1st International forum on Quantum sensing  (東京工業大学大岡山キャンパス) 

    Presentation date: 2019.02

  • 1H NMR Detection on Nitrogen Terminated Diamond by Shallow Nitrogen Vacancy Centers

    Takahiro Sonoda, Sora Kawai, Hayate Yamano, Jorge J. Buendia, Taisuke Kageura, Yu Ishii, Kiro Nagaoka, Ryosuke Fukuda, Moriyoshi Haruyama, Takashi Tanii, Keisuke Yamada, Shinobu Onoda, Wataru Kada, Osamu Hanaizumi, Alastair Stacey, Kazuhiro Kanda, Takuyuki Teraji, Shozo Kono, Junichi Isoya, Hiroshi Kawarada

    2018 MRS Fall Meeting & Exhibit  (Boston, Massachusetts) 

    Presentation date: 2018.11

  • 窒素終端ダイヤモンド中の浅いNVセンターを用いた1H-NMR

    立石哲也, 薗田隆弘, 河合空, 山野颯, Jorge J. Buendia, 蔭浦泰資, 石井邑, 永岡希朗, 福田諒介, 谷井孝至, 春山盛善, 山田圭介, 小野田忍, 加田渉, 花泉修, Alastair Stacey, 神田一浩, 上村雅治, 寺地徳之, 磯谷順一, 河野省三, 川原田洋

    第32回ダイヤモンドシンポジウム  (電気通信大学) 

    Presentation date: 2018.11

  • 有機化合物イオン注入によるNVセンターの多量子ビット形成

    小野田忍, 春山盛善, 樋口泰成, 加田渉, 千葉敦也, 平野貴美, 寺地徳之, 五十嵐龍治, 河合空, 川原田洋, 石井邑, 福田諒介, 谷井孝至, 磯谷順一, 花泉修, 大島武

    第32回ダイヤモンドシンポジウム  (電気通信大学) 

    Presentation date: 2018.11

  • Computational Modeling of Spontaneous Firing Patterns Generated by Single Autaptic Neurons

    Kouhei Hattori, Takeshi Hayakawa, Akira Nakanishi, Mihoko Ishida, Hideaki Yamamoto, Ayumi Hirano-Iwata, Takashi Tanii

    The 28th Annual Conference of the Japanese Neural Network Society  (Okinawa Institute of Science and Technology (OIST)) 

    Presentation date: 2018.10

  • Lithographically Engineered Shallow Nitrogen-Vacancy Centers in Diamond for External Nuclear Spin Sensing

    R Fukuda, P Balasubramanian, I Higashimata, Y Ishii, K Nagaoka, S Kawai, T Sonoda, T Teraji, S Onoda, M Haruyama, K Yamada, M Inaba, H Yamano, F Stuerner, S Schmitt, L, P McGuiness, F Jelezko, T Ohshima, T Shinada, H Kawarada, W Kada, O Hanaizumi, J Isoya, T Tanii

    (International Center, Sendai, Japan) 

    Presentation date: 2018.10

  • エネルギーイオン注入によりSi基板中に注入したErとOの複合体形成観察およびフォトルミネッセンス計測

    魏啓楠, アブデルガファ愛満, 鈴木雄大, 清水康雄, 井上耕治, 永井康介, 品田高宏, 谷井孝至

    東北大学金属材料研究所付属量子エネルギー材料科学国際研究センター 平成30年度大洗研究会  (東北大学金属材料研究所) 

    Presentation date: 2018.10

  • Controlled Creation of Erbium-Oxygen Centers in Silicon by Deterministic Ion Implantation for Room-Temperature Photoluminescence at Telecom Wavelength

    R Fukuda, P Balasubramanian, I Higashimata, Y Ishii, K Nagaoka, S Kawai, T Sonoda, T Teraji, S Onoda, M Haruyama, K Yamada, M Inaba, H Yamano, F Stuerner, S Schmitt, L, P McGuiness, F Jelezko, T Ohshima, T Shinada, H Kawarada, W Kada, O Hanaizumi, J Isoya, T Tanii

    (Congress Centrum Wburg, Germanyürz) 

    Presentation date: 2018.10

  • 窒素終端ダイヤモンド中の浅い単一NVセンターを用いたNMR測定(Ⅱ)

    立石哲也, 薗田隆弘, 河合空, 山野颯, J. J. Buendia, 蔭浦泰資, 石井邑, 永岡希朗, 福田諒介, 谷井孝至, 春山盛善, 山田圭介, 小野田忍, 加田渉, 花泉修, A. Stacey, 神田一浩, 上村雅治, 寺地徳之, 磯谷順一, 河野省三, 川原田洋

    第79回応用物理学会秋季学術講演会  (名古屋国際会議場) 

    Presentation date: 2018.09

  • シリコン中におけるエルビウム-酸素複合体の室温発光特性の理解

    清水 康雄, 涂 远, アブデルガファ 愛満, 鈴木 雄大, 魏 啓楠, 谷井 孝至, 品田 高宏, Prati Enrico, Celebrano Michele、Finazzi Marco、Ghirardini Lavinia, 井上 耕治, 永井 康介

    第79回応用物理学会秋季学術講演会  (名古屋国際会議場) 

    Presentation date: 2018.09

  • 浅い単一NVセンターの規則配列を用いたナノNMRのスピンノイズ解析

    石井邑, 福田諒介, PriyadharshiniBalasubramanian, 東又格, 永岡希朗, 河合空, 薗田隆弘, 寺地徳之, 小野田忍, 春山盛善, 山田圭介, 稲葉優文, 山野颯,FelixM.Stuerner, SimonSchmitt,LiamP.McGuinness, FedorJelezko, 大島武, 品田高宏, 川原田洋, 加田渉, 花泉修, 磯谷順一, 谷井孝至

    第79回応用物理学会秋季学術講演会 

    Presentation date: 2018.09

  • Properties of Shallow Nitorogen Vacancy Centers in Nitrogen Terminated Diamond and Detection of Nuclear Magnetic Resonance

    Takahiro Sonoda, Sora Kawai, Hayate Yamano, Kanami, Kato, Jorge J, Buendia, Taisuke Kageura, Yu Ishii, Kiro Nagaoka, Ryosuke Fukuda, Takuma Okada, Moriyoshi Haruyama, Takashi, Tanii, Keisuke Yamada, Shinobu Onoda, Wataru Kada, Osamu Hanaizumi, Alastair Stacy, Tokuyuki Teraji, Shozo Kono, Junichi Isoya, Hiroshi Kawarada

    (University of Tokyo) 

    Presentation date: 2018.09

  • Growth of single crystal diamond and fabrication of spin defects for quantum science and thchnology applications

    JunichiIsoya,TokuyukiTeraji, HitoshiSumiyama, ShinobuOnoda, TakashiTaniiandHiroshiKawarada

    The69thDiamondConference 

    Presentation date: 2018.07

  • Fabrication of spin defects in diamond for quantum science and technology: from single to ensemble

    ShinobuOnoda,TokuyukiTeraji, HitoshiSumiyama, TakashiTanii, JunichiIsoya

    InternationalConferenceonchallengesinQuantumInformationScienceCQIS2018 

    Presentation date: 2018.04

  • マイクロパターン上で培養された単一神経細胞の自発発火活動の解析

    中根任宏, 佐藤晃揮, 服部晃平, 山本英明, 谷井孝至

    第65回応用物理学会春季学術講演会  (早稲田大学西早稲田キャンパス) 

    Presentation date: 2018.03

  • 窒素終端ダイヤモンド中の浅いNVセンターを用いたNMR測定

    薗田隆弘, 河合空, 山野颯, 加藤かなみ, J. J. Buendia, 蔭浦泰資, 石井邑, 福田諒介, 岡田拓真, 春山盛善, 谷井孝至, 山田圭介, 小野田忍, 加田渉, 花泉修, A. Stacy, 寺地徳之, 河野省三, 磯谷順一, 川原田洋

    第65回応用物理学会春季学術講演会  (早稲田大学西早稲田キャンパス) 

    Presentation date: 2018.03

  • An experimental and computational study on spontaneous firing pattern of a single neuron

    KouheiHattori, ShoKono,TomoyaYoneyama, AkiraNakanishi, HideakiYamamotoa, dTakashiTanii

    The6thRIECInternationalSymposiumonBrainFunctionsandBrainComputer 

    Presentation date: 2018.02

  • Charge Stability and Coherence Property of Shallow Nitrogen Vacancy Center in Nitrogen Terminated Diamond for DNA Detection

    S.Kawai, H.Yamano, T.Sonoda, K.Kato, J.J.Buendia, E.Suaebah, T.Kageura, M.Inaba, R.Fukuda, T.Okada, M.Haruyama, T.Tanii, K.Yamada, S.Onoda, W.Kada, O.Hanaizumi, A.Stacey, T.Teraji, S.Kono, J.Isoya, H.Kawarada

    2017MRSFall&Exhibit 

    Presentation date: 2017.11

  • 窒素終端ダイヤモンド中の浅いNVセンターのスピン特性

    薗田隆弘, 河合空, 山野颯, 加藤かなみ, J.J.Buendia, 蔭浦泰資, 福田諒介, 岡田拓真, 谷井孝至, 春山盛喜, 山田圭介, 小野田忍, 加田渉, 花泉修, 寺地徳之, 磯谷順一, A.Stacey, 河野省三, 川原田洋

    第31回ダイヤモンドシンポジウム 

    Presentation date: 2017.11

  • An experimental and computational study on spontaneous firing pattern of a single neuron

    KouheiHattori, ShoKono,TomoyaYoneyama, AkiraNakanishi, HideakiYamamotoa, dTakashiTanii

    第27回日本神経回路学会全国大会 

    Presentation date: 2017.09

  • Charge Stability of Shallow Nitrogen Vacancy Center in Diamond with Radical Exposure Nitridation Surface for DNA Detection

    SoraKawai, HayateYamano, MikiKajiya, KanamiKato, JorgeJ.Buendia, TaisukeKageura, MasafumiInaba, RyosukeFukuda, TakumaOkada, ItaruHigashimata, MoriyoshiHaruyama, TakashiTanii, ShinobuOnoda, WataruKada, OsamuHanaizumi, TokuyukiTeraji, ShozoKono,JunichiIsoyaandHiroshiKawarada

    2017InternationalConferenceonSolidStateDevicesandMaterials 

    Presentation date: 2017.09

  • 生体分子パターンの形状による神経細胞回路のモジュー ル間相互作用の制御

    井手克哉, 山本英明, 守谷哲, 脇村桂, 谷井孝至, 秋間学尚, 久保田繁, 佐藤茂雄, 庭野道夫, 平野愛弓

    第78回応用物理学会秋季学術講演会 

    Presentation date: 2017.09

  • 可視光応答酸化チタン薄膜の光触媒能を利用した細胞の液中パターニング(II)

    河野翔, 黒飛敦, 服部晃平, 山本英明, 谷井孝至

    第78回応用物理学会秋季学術講演会 

    Presentation date: 2017.09

  • シリコン中に共注入した酸素がエルビウム分布に与える影響

    清水康雄, 涂远, アブデルガファ愛満, 矢野真麻, 鈴木雄大, 谷井孝至, 品田高宏, EnricoPrati,MicheleCelebrano,MarcoFinazzi, LaviniaGhirardini, 井上耕治, 永井康介

    第78回応用物理学会秋季学術講演会 

    Presentation date: 2017.09

  • 窒素終端およびシリコン終端ダイヤモンド中の浅いNVセンターのスピン特性

    薗田隆弘, 河合空, 山野颯, 加藤かなみ, 蔭浦泰資, 福田諒介, 岡田拓真, 春山盛善, 谷井孝至, 山田啓介, 小野田忍, 寺地徳之, 加田渉, 花泉修, 河野省三, 磯谷順一, 川原田洋

    第78回応用物理学会秋季学術講演会 

    Presentation date: 2017.09

  • 可視光応答酸化チタンの光触媒作用を活用した液中表面改質と細胞パターニング

    河野翔, 黒飛敦, 服部晃平, 山本英明, 平野愛弓, 谷井孝至

    第37回表面科学学術講演会 

    Presentation date: 2017.08

  • マイクロ構造に対する接着差を利用した癌・正常細胞選別ー表面接着性によるライブセル・ラベルフリーな癌・正常細胞判別胞の提案ー

    若林洸, 竹内祐子, 田中学, 谷井孝至

    第37回表面科学学術講演会 

    Presentation date: 2017.08

  • Atom Probe Study of Erbium and Oxygen Co‐Implanted Silicon

    YasuoShimizu,YuanTu, AymanAbdelghafar, MaasaYano, YudaiSuzuki, TakashiTanii, TakahiroShinada, EnricoPrati,MicheleCelebrano, Marco Finazzi, LaviniaGhirardini, KojiInoue, Yasuyoshi Nagai

    2017SiliconNanoelectronicsWorkshop 

    Presentation date: 2017.06

  • Revisiting room-temperature 1.54 um photoluminescence of ErOx centers in silicon at extremely low concentration

    EnricoPrati,MicheleCelebrano,LaviniaGhirardini, PaoloBiagioni, MarcoFinazzi, YasuoShimizu,YuanTu, KojiInoue, YasuyoshiNagai, TakahiroShinada, YukiChiba,AymanAbdelghafar, MaasaYano, TakashiTanii

    2017SiliconNanoelectronicsWorkshop 

    Presentation date: 2017.06

  • マイクロ加工表面を用いた培養神経回路のモジュール性制御

    井手克哉, 山本英明, 松村亮佑, 谷井孝至, 吉信達夫, 庭野道夫, 平野愛弓

    第64回応用物理学会春季学術講演会 

    Presentation date: 2017.03

  • シリコン中に形成されたエルビウム不均一分布の3次元アトムプローブ評価

    清水康雄, 涂远, アブデルガファ愛満, 矢野真麻, 鈴木雄大, 谷井孝至, 品田高宏, E.Prati, 井上耕治, 永井康介

    第64回応用物理学会春季学術講演会 

    Presentation date: 2017.03

  • Er:O共注入Si MOSFETのフォトルミネッセンスおよび光励起電流計測

    アブデルガファ愛満, 矢野真麻, 千葉悠貴, E.Prati, M.Celebrano, L.Ghirardini, M.Finazzi, G.Ferrari, 品田高宏, 谷井孝至

    第64回応用物理学会春季学術講演会 

    Presentation date: 2017.03

  • 可視光応答酸化チタン薄膜の光触媒能を利用した細胞の液中パターニング

    古澤昂平, 河野翔, 藤城翔偉, 山本英明, 谷井孝至

    第64回応用物理学会春季学術講演会 

    Presentation date: 2017.03

  • モジュール構造型培養神経回路の計算論的モデリング

    山本英明, 守谷哲, 井手克哉, 松村亮佑, 秋間学尚, 久保田繁, 谷井孝至, 佐藤茂雄, 庭野道夫, 平野愛弓

    第64回応用物理学会春季学術講演会 

    Presentation date: 2017.03

  • 浅い単一 NV センターの規則的配列を用いた表面の水素核スピンの検出

    福田諒介, 東又格, 岡田拓真, 加賀美理沙, 寺地徳之, 小野田忍, 春山盛善, 山田圭介, 稲葉優文, 山野楓, P.Balasubramanian, F.Stuerner, S.Schmitt, L.McGuinness, F.Jelezko, 大島武, 品田高宏, 川原田洋, 加田渉, 花泉修, 磯谷順一, 谷井孝至

    第64回応用物理学会春季学術講演会 

    Presentation date: 2017.03

  • イオン注入による原子空孔の形成とNVセンターへの変換効率

    小野田忍, 立見和雅, 春山盛善, 寺地徳之, 磯谷順一, 山田圭介, 谷井孝至, 川原田洋, 品田高宏, 加田渉, 花泉修, 大島武

    第64回応用物理学会春季学術講演会 

    Presentation date: 2017.03

  • 表面終端がダイヤモンド中の浅いNVセンターへ与える影響

    河合空, 山野颯, 梶家美貴, 加藤かなみ, 蔭浦泰資, 稲葉優文, 福田諒介, 岡田拓真, 東又格, 春山盛善, 谷井孝至, 山田圭介, 小野田忍, 寺地徳之, 加田渉, 花泉修, 磯谷順一, 川原田洋

    第64回応用物理学会春季学術講演会 

    Presentation date: 2017.03

  • N-V中心NMRのためのダイヤモンド表面の電荷安定性

    川原田洋, 山野颯, 河合空, 梶家美貴, 加藤かなみ, 蔭浦泰資, 稲葉優文, 岡田拓真, 東又格, 春山盛善, 谷井孝至, 山田圭介, 小野田忍, 寺地徳之, 加田渉, 花泉修, 磯谷順一

    第64回応用物理学会春季学術講演会 

    Presentation date: 2017.03

  • Synchronization in neuronal networks with modular geometry

    H.Yamamoto, T.Tanii, S.Kubota, S.Sato, M.Niwano, A.Hirano-Iwata

    The5thRIECInternationalSymposiumonBrainFunctionsandBrainComputer 

    Presentation date: 2017.02

  • Controlling modularity of cortical neuronal networks using micropatterned surfaces

    K.Ide, H.Yamamoto, R.Matsumura, T.Tanii, M.Niwano, A.Hirano-Iwata

    The5thRIECInternationalSymposiumonBrainFunctionsandBrainComputer 

    Presentation date: 2017.02

  • In situ modification of cell-culture scaffolds by photocatalysis of visible-light-responsible TiO2 film

    S.Kono, K.Furusawa, S.Fujishiro, H.Yamamoto, T.Tanii

    The5thRIECInternationalSymposiumonBrainFunctionsandBrainComputer 

    Presentation date: 2017.02

  • A computational study on spontaneous activity of a single neuron

    K.Hattori, S.Kono, H.Yamamoto, T.Tanii

    The5thRIECInternationalSymposiumonBrainFunctionsandBrainComputer 

    Presentation date: 2017.02

  • Structure-function Relationships in Living Neuronal Networks: a Surface Engineering Approach

    H.Yamamoto, A.Hirano-Iwata, T.Tanii, M.Niwano  [Invited]

    10thAnniversaryInternationalSymposiumonNanomedicine(ISNM2016) 

    Presentation date: 2016.11

  • 磁気センサー応用に向けた単一のNVセンターの作製と状態の評価

    梶家美貴, 加藤かなみ, 河合空, 山野楓, S.Evi, 蔭浦泰資, 稲葉優文, 東又格, 春山盛善, 谷井孝至, 山田圭介, 小野田忍, 寺地徳之, 加田渉, 花泉修, 磯谷順一, 河野省三, 川原田洋

    第30回ダイヤモンドシンポジウム 

    Presentation date: 2016.11

  • 酸素雰囲気中の熱処理による浅いNVセンターのスピン特性改善

    河合空, 山野颯, 梶家美貴, 加藤かなみ, 蔭浦泰資, 稲葉優文, 岡田拓真, 東又格, 春山盛善, 谷井孝至, 山田圭介, 小野田忍, 寺地徳之, 加田渉, 花泉修, 磯谷順一, 川原田洋

    第30回ダイヤモンドシンポジウム 

    Presentation date: 2016.11

  • 量子センシングのための浅い単一NVセンターの規則配列形成:イマージョンオイル中の水素核スピン計測

    東又格, 岡田拓真, 加賀美理沙, 寺地徳之, 小野田忍, 春山盛善, 山田圭介, 稲葉優文, 山野楓, P.Balasubramanian, F.Stuerner, S.Schmitt, L.McGuinness, F.Jelezko, 大島武, 品田高宏, 川原田洋, 加田渉, 花泉修, 磯谷順一, 谷井孝至

    第30回ダイヤモンドシンポジウム 

    Presentation date: 2016.11

  • Charge State Stabilization of Shallow nitrogen Vacancy Centers in Diamond by Different Oxygen Surface Modification

    H.Yamano, S.Kawai, K.Kato, T.Kageura, M.Inaba, T.Okada, I.Higashimata, M.Haruyama, T.Tanii, K.Yamada, S.Onoda, W.Kada, O.Hanaizumi, T.Teraji, J.Isoya, H.Kawarada

    SSDM2016 

    Presentation date: 2016.09

  • イオン注入を用いたSiVセンターの作製と生成収率のエネルギー依存性評価

    加賀美理沙, 東又格, 岡田拓真, 寺地徳之, 小野田忍, 春山盛善, 大島武, 品田高宏, 加田渉, 花泉修, 磯谷順一, 谷井孝至

    第77回応用物理学会秋季学術講演会 

    Presentation date: 2016.09

  • ナノホールレジストマスクを用いたNVセンター配列の作製Ⅱ

    岡田拓真, 東又格, 加賀美理沙, 寺地徳之, 小野田忍, 山田圭介, 春山盛善, 稲葉優文, 山野颯, P.iBalasubramanian, B.Naydenov, L.McGuinness, F.Jelezko, 大島武, 品田高宏, 川原田洋, 加田渉, 花泉修, 磯谷順一, 谷井孝至

    第77回応用物理学会秋季学術講演会 

    Presentation date: 2016.09

  • ナノホールレジストマスクを用いた低エネルギーイオン注入による量子センシングのためのNVセンター配列の作製

    東又格, 岡田拓真, 加賀美理沙, 寺地徳之, 小野田忍, 春山盛善, 山田圭介, 稲葉優文, 山野颯, P.Balasubramanian, L.PMcGuinness, B.Naydenov, F.Jelezko, 大島武, 品田高宏, 川原田洋, 加田渉, 花泉修, 磯谷順一, 谷井孝至

    第77回応用物理学会秋季学術講演会 

    Presentation date: 2016.09

  • 表面酸化によるダイヤモンド中の浅いNVセンターのコヒーレンス特性

    河合空, 山野颯, 梶家美貴, 加藤かなみ, 蔭浦泰資, 稲葉優文, 岡田拓真, 東又格, 春山盛善, 谷井孝至, 山田圭介, 小野田忍, 寺地徳之, 加田渉, 花泉修, 磯谷順一, 川原田洋

    第77回応用物理学会秋季学術講演会 

    Presentation date: 2016.09

  • DNAのNMR検出に向けたNH2終端ダイヤモンド中の浅いNVセンター

    梶家美貴, 加藤かなみ, 河合空, 山野颯, SuaebahEvi, 陰浦泰資, 稲葉優文, 東又格, 春山盛善, 谷井孝至, 山田圭介, 小野田忍, 寺地徳之, 加田渉, 花泉修, 磯谷順一, 河野省三, 川原田洋

    第77回応用物理学会秋季学術講演会 

    Presentation date: 2016.09

  • 有機単分子膜パターンにより細胞間接続を制御した2細胞神経回路の構築と解析

    河野翔, 藤森壮也, 山本英明, 谷井孝至

    第77回応用物理学会秋季学術講演会 

    Presentation date: 2016.09

  • 非接触型センサを用いた建物の層間変位計測システム その12 データ処理機能を内蔵した小型統合センサの開発

    服部晃平, 丸谷翔平, 畑田朋彦, 片村立太, 西谷章, 谷井孝至

    2016年度日本建築学会大会 

    Presentation date: 2016.08

  • Fabrication of nitrogen-vacancy centers by implantation through nano-holes in resist mask

    I.Higashimata, G.Koike, T.Teraji, S.Onoda, M.Inaba, P.Balasubramanian, L.P.McGuinness, B.Naydenov, F.Jelezko, T.Ohshima, T.Shinada, H.Kawarada, J.Isoya, T.Tanii

    The67thDiamondConference 

    Presentation date: 2016.07

  • Spontaneous activity of cultured neuronal networks with defined numbers of neurons: a computational study

    H.Yamamoto, Y.Chida, A.Hirano-Iwata, T.Tanii, S.Kubota, M.Niwano

    10thFENSForumforNeuroscience 

    Presentation date: 2016.07

  • 磁気センサー応用に向けた単一のNVセンターの作製と状態の評価

    山野颯, 加藤かなみ, 蔭浦泰資, 稲葉優文, 東又格, 小池悟大, 春山盛善, 谷井孝至, 小野田忍, 寺地徳之, 加田渉, 花泉修, 磯谷順一, 川原田洋

    第63回応用物理学会春季学術講演会 

    Presentation date: 2016.03

  • 磁気センサー応用に向けた単一のNVセンターの作製と状態の評価

    山野颯, 加藤かなみ, 蔭浦泰資, 稲葉優文, 東又格, 小池悟大, 春山盛善, 谷井孝至, 小野田忍, 寺地徳之, 加田渉, 花泉修, 磯谷順一, 川原田洋

    第63回応用物理学会春季学術講演会 

    Presentation date: 2016.03

  • 表面終端による浅いNVセンターの電荷状態

    加藤かなみ, 山野颯, 蔭浦泰資, 瀬下裕志, 稲葉優文, 東又格, 小池悟大, 谷井孝至, 磯谷順一, 寺地徳之, 小野田忍, 春山盛善, 加田渉, 花泉修, 川原田洋

    第63回応用物理学会春季学術講演会 

    Presentation date: 2016.03

  • 表面マイクロ改質技術を活用した培養神経細胞/回路の構造制御

    山本英明, 平野愛弓, 谷井孝至, 庭野道夫

    第35回表面科学学術講演会 

    Presentation date: 2015.12

  • 表面水素終端化による浅いNVセンターへの影響

    山野颯, 稲葉優文, 蔭浦泰資, 加藤かなみ, 小池悟大, 谷井孝至, 小野田忍, 寺地徳之, 磯谷順一, 川原田洋

    第29回ダイヤモンドシンポジウム 

    Presentation date: 2015.11

  • keVからサブGeVのイオン注入を用いて形成したNVセンターの特性評価

    小野田忍, 春山盛善, 寺地徳之, 磯谷順一, C.Müller, L.McGuinness, P.Balasubramanian, B.Naydenov, F.Jelezko, 小池悟大, 東又格, 稲葉優文, 大島武, 加田渉, 花泉修, 谷井孝至, 川原田洋

    第29回ダイヤモンドシンポジウム 

    Presentation date: 2015.11

  • 表面終端と帯電膜による浅いNVセンターの電荷状態

    加藤かなみ, 稲葉優文, 山野楓, 蔭浦泰資, 谷井孝至, 小池悟大, 磯谷順一, 小野田忍, 寺地徳之, 川原田洋

    第29回ダイヤモンドシンポジウム 

    Presentation date: 2015.11

  • ナノホールレジストマスクを用いたNVセンタ配列の作製

    小池悟大, 東又格, 寺地徳之, 小野田忍, 稲葉優文, P.Balasubramanian, B.Naydenov, F.Jelezko, 大島武, 品田高宏, 川原田洋, 磯谷順一, 谷井孝至

    第29回ダイヤモンドシンポジウム 

    Presentation date: 2015.11

  • Laser-Scanning Photocatalytic Lithography of Organosilane Monolayers for Fabrication of Artificial Neuronal Circuits

    K.Sekine, H.Yamamoto, S.Kono, S.Fujishiro, T.Ikeda, A.Kurodaa, dT.Tanii

    28thInternationalMicroprocessesandNanotechnologyConference 

    Presentation date: 2015.11

  • Identification of Normal-Cancer Cells by the Difference in their Adhesion on Organosilane Monolayer Templates: A Feasibility Study

    YukoTakeuchi, RumiSakamoto, HikaruWakabayashi, HideakiYamamoto, YukoSato, TakashiTanii

    28thInternationalMicroprocessesandNanotechnologyConference 

    Presentation date: 2015.11

  • ナノホールレジストマスクを用いたNVセンタ配列の作製

    東又格, 小池悟大, 寺地徳之, 小野田忍, 稲葉優文, PriyadharshiniBalasubramanian, BorisNaydenov, FedorJelezko, 大島武, 品田高宏, 川原田洋, 磯谷順一, 谷井孝至

    第76回応用物理学会秋季学術講演会 

    Presentation date: 2015.09

  • Geの1次元配列を有するMOSトランジスタの室温伝導特性

    千葉悠貴, EnricoPrati, 矢野真麻, アブデルガファ愛満, 品田高宏, 谷井孝至

    第76回応用物理学会秋季学術講演会 

    Presentation date: 2015.09

  • マイクロパターン上での培養による興奮性-抑制性神経細胞の非標識判別II

    河野翔, 櫛田昂歳, 山本英明, 谷井孝至

    第76回応用物理学会秋季学術講演会 

    Presentation date: 2015.09

  • ナノホールマスク注入ドーパントイオン分布の3次元アトムプローブ計測―シングルイオン注入法の照準位置精度の向上―

    矢野真麻, 千葉悠貴, 清水康雄, 井上耕治, 永井康介, 谷井孝至, 品田高宏

    第76回応用物理学会秋季学術講演会 

    Presentation date: 2015.09

  • 層間変位計測に基づいた損傷モニタリングシステムのE-ディフェンスS造高層建物実験による検証 その4 局部回転角の測定

    小室雅春, 畑田朋彦, 片村立太, 西谷章, 谷井孝至

    日本建築学会大会(関東) 

    Presentation date: 2015.09

  • 層間変位計測に基づいた損傷モニタリングシステムのE-ディフェンスS造高層建物実験による検証 その3 損傷評価法の検証

    畑田朋彦, 片村立太, 萩原一, 谷井孝至, 仁田佳宏, 西谷章

    日本建築学会大会(関東) 

    Presentation date: 2015.09

  • Array of bright silicon-vacancy centers in diamond fabricated by low-energy focused ion beam implantation

    ItaruHigashimata, SyutoTamura, GodaiKoike, AkiraKomatsubara,TokuyukiTeraji, ShinobuOnoda,LiamP.McGuinness, LachlanRogers, BorisNaydenov,EWu,LiuYan, FedorJelezko, TakeshiOhshima, JunichiIsoya, TakahiroShinada, TakashiTanii

    DiamondQuantumSensingWorkshop2015 

    Presentation date: 2015.08

  • Fabrication of nitrogen-vacancy center array using a nanohole resist mask

    GodaiKoike, ItaruHigashimata, TakumaOkada, RisaKagami, TokuyukiTeraji, ShinobuOnoda, MasafumiInaba, PriyadharshiniBalasubramanian, BorisNaydenov, FedorJelezko, TakeshiOhshima, TakahiroShinada, HiroshiKawarada, JunichiIsoya, TakashiTanii

    DiamondQuantumSensingWorkshop2015 

    Presentation date: 2015.08

  • Live-cell, label free identification of excitatory-inhibitory neurons on micropatterned surfaces

    ShoKono,TakatoshiKushida, HideakiYamamoto, TakashiTanii

    EighthInternationalConferenceonMolecularElectronicsandBioelectronics 

    Presentation date: 2015.06

  • Single ion implantation of Ge dopant impurity in silicon transistors

    EnricoPrati, 千葉悠貴, 矢野真麻, 熊谷国憲, 堀匡寛, 品田高宏, 谷井孝至

    Silicon_NanoelectronicsWorkshop2015 

    Presentation date: 2015.06

  • Single-molecule FRET measurements using molecular beacon

    TakatoshiKushida, SatoshiIzumi, HideakiYamamoto, TakashiTanii

    The5thInternationalSymposiumonAdvancedMaterials 

    Presentation date: 2015.06

  • 有機シラン単分子膜パターン基板への接着差を用いた癌細胞の選別

    竹内祐子, 柿沼瑛介, 坂本留美, 山本英明, 佐藤裕子, 谷井孝至

    第62回応用物理学会春季学術講演会 

    Presentation date: 2015.03

  • モレキュラービーコンを用いた1分子FRET計測系の構築

    和泉聡志, 大久保幸太朗, 櫛田昂歳, 山本英明, 谷井孝至

    第62回応用物理学会 

    Presentation date: 2015.03

  • マイクロパターン神経細胞回路の活動様式に関する理論的考察

    千田雄大, 山本英明, 平野愛弓, 石原広識, 藤森壮也, 谷井孝至, 久保田繁, 庭野道夫

    第62回応用物理学会春季学術講演会 

    Presentation date: 2015.03

  • Computational modeling of the spontaneous activity in micropatterned neuronal networks

    Y.Chida, H.Yamamoto, A.Hirano-Iwata, K.Ishihara, S.Fujimori, T.Tanii, S.Kubota, M.Niwano

    3rdRIECInternationalSymposiumonBrainFunctionsandBrainComputer 

    Presentation date: 2015.02

  • In Situ Modification of Cell-Culture Scaffolds by Photocatalytic Decomposition of Organosilane Monolayers on Titanium Dioxide

    ShoKono,HideakiYamamoto, KoheiSekine, TakashiTanii

    The5thInternationalSymposiumonAdvancedMaterialsDevelopmentandIntegrationofNovelStructuralMetallicandInorganicMaterials(2014) 

    Presentation date: 2014.11

  • Adhesibility-Dependent Cell Sorting Using Organosilane Monolayer Template and Green-Tea Catechin

    RumiSakamoto, EisukeKakinuma, YukoTakeuchi, HideakiYamamoto, TakashiTanii

    The5thInternationalSymposiumonAdvancedMaterialsDevelopmentandIntegrationofNovelStructuredMatellicandInorganicMaterials(AMDI-5)Conjunctionwith6thIBBFrontierSymposium 

    Presentation date: 2014.11

  • Optimization of micropattern geometry for long-term culture of isolated neurons and identification of excitatory-inhibitory cell types

    HideakiYamamoto, ShoKono, TakatoshiKushida, AyumiHirano-Iwata, MichioNiwano, TakashiTanii

    Neuroscience2014 

    Presentation date: 2014.11

  • Fabrication of micropatterned substrate for live-cell, label free identification of excitatory-inhibitory neurons

    ShoKono,TakatoshiKushida, HideakiYamamoto, TakashiTanii

    The7thInternationalSymposiumonSurfaceScience 

    Presentation date: 2014.11

  • Surface modification in aqueous solution using TiO2 photocatalysis and a linker protain L2 for patterning primary neurons

    KoheiSekine,HideakiYamamoto, ShoKono,TakeshiIkeda, AkioKuroda, TakashiTanii

    The7thInternationalSymposiumonSurfaceScience 

    Presentation date: 2014.11

  • 有機シラン単分子膜パターン基板を用いたモジュール構造型培養神経回路の構築

    石原広識, 藤森壮也, 山本英明, 谷井孝至

    第75回応用物理学会秋季学術講演会 

    Presentation date: 2014.09

  • ナノスリット導波路を用いた細胞内生体分子のリアルタイム蛍光イメージング

    大久保幸太朗, 櫛田昂歳, 和泉聡志, 山本英明, 谷井孝至

    第75回応用物理学会秋季学術講演会 

    Presentation date: 2014.09

  • ダイヤモンドへの低エネルギーSiイオン注入におけるSi-Vセンタ生成収率の評価

    田村崇人, 小池悟大, 谷井孝至, 寺地徳之, 小野田忍, 大島武, FedorJelezko,EWu, 品田賢宏, 磯谷順一, LiamP, Mcguinness,LachlanRogers,ChristophMüller, BorisNaydenov,LiuYan

    第75回応用物理学会秋季学術講演会 

    Presentation date: 2014.09

  • マイクロ加工基板を用いた興奮性/抑制性神経細胞判別法の開発

    河野翔, 櫛田昂歳, 山本英明, 谷井孝至

    第37回日本神経科学大会 

    Presentation date: 2014.09

  • Quantitative evaluation of cancer cell adhesion by functional substrate and optical interferometric technique

    HiroshiYoshikawa, MasamiSuganuma, TakashiTanii  [Invited]

    The12thJapan-KoreaJointSymposiumonCancerandAgingResearch 

    Presentation date: 2014.06

  • マイクロパターン上への細胞接着過程のタイムラプス解析 -緑茶カテキンを含む培養液中でのがん細胞と正常細胞の比較-

    坂本留実, 益田顕太朗, 柿沼瑛介, 伊藤耕作, 池滝健太郎, 松崎賢寿, 吉川洋史, 中林誠一郎, 山本英明, 佐藤裕子, 谷井孝至

    第61回応用物理学会春季学術講演会  (青山学院大学) 

    Presentation date: 2014.03

  • マイクロパターン上での培養による興奮性-抑制性神経細胞の非標識判別

    櫛田昂歳, 河野翔, 山本英明, 谷井孝至

    第61回応用物理学会春季学術講演会  (青山学院大学) 

    Presentation date: 2014.03

  • 酸化チタンの光触媒能とリンカータンパク質RPL2を活用した神経細胞パターニング

    関根浩平, 山本英明, 池田丈, 黒田章夫, 谷井孝至

    第61回応用物理学会春季学術講演会  (青山学院大学) 

    Presentation date: 2014.03

  • 1次元リン(P)ド―パント配列を有する長チャネルトランジスタの低温伝導特性評価

    熊谷国憲, Enrico Prati, 堀匡寛, 福井結子, 谷井孝至, 品田賢宏

    第61回応用物理学会春季学術講演会  (青山学院大学) 

    Presentation date: 2014.03

  • 有機単分子膜パターンを用いた細胞接着制御と評価

    谷井孝至, 山本英明  [Invited]

    第61回応用物理学会春季学術講演会  (青山学院大学) 

    Presentation date: 2014.03

  • Live-cell, label-free identification of excitatory-inhibitory neurons in culture using surface micropatterns

    S. Kono, H. Yamamoto, T. Kushida, T. Tanii

    The2ndRIECInt.Symp.onBrainFunctionsandBrainComputer 

    Presentation date: 2014.02

  • Intrinsic activity of defined neuronal networks in culture

    H. Yamamoto, T. Tanii

    The2ndRIECInt.Symp.onBrainFunctionsandBrainComputer 

    Presentation date: 2014.02

  • ナノ構造配列を用いたリアルタイム1分子蛍光イメージング法の開発

    谷井孝至  [Invited]

    早稲田大学―関西大学研究交流セミナー「MEMSとナノテクノロジーの融合とその応用」  (関西大学(千里山キャンパス)) 

    Presentation date: 2013.12

  • Application of Surface Modification Techniques in Cancer and Neuroscience Research

    Takashi TANII, Hideaki YAMAMOTO  [Invited]

    The4thInternationalSymposiumonAdvancedMaterialsDevelopmentand IntegrationofNovelStructuredMetallicandInorganicMaterials 

    Presentation date: 2013.12

  • 基板表面性状制御によるがん細胞/神経細胞の接着制御と接着能評価

    谷井孝至  [Invited]

    2013年真空・表面科学合同講演会  (早稲田大学理工学術院) 

    Presentation date: 2013.11

  • Fabrication of Silicon-Vacancy Center Array in Diamond by Low-Energy Single-Ion Implantation

    Syuto Tamura, Akira Komatsubara, TokuyukiTeraji, Shinobu Onoda, Liam McGuinness, Fedor Jelezko, Takeshi Ohshima, Junichi Isoya, Takahiro Shinada, Takashi Tanii, Lachlan Rogers, Kay Jahnke

    2013JSAP-MRSJointSymposia 

    Presentation date: 2013.09

  • マイクロ加工基板上での単一神経細胞の長期培養

    河野翔, 山本英明, 森田麻裕, 谷井孝至

    第74回応用物理学会秋季学術講演会  (同志社大学) 

    Presentation date: 2013.09

  • リアルタイム一分子蛍光イメージング法のSN比を向上するゼロモード導波路の設計

    大久保 幸太朗, 日向野 駿, 上野 太郎, 船津 高志, 山本 英明, 谷井 孝至

    第74回応用物理学会秋季学術講演会  (同志社大学) 

    Presentation date: 2013.09

  • 光干渉法を用いたがん細胞‐有機シラン単分子膜間接着の定量評価

    伊藤 耕作, 松崎 賢寿, 柿沼 瑛介, 益田 顕太朗, 坂本 留実, 菅沼 雅美, 中林 誠一郎, 谷井 孝至, 吉川 洋史

    第74回応用物理学会秋季学術講演会  (同志社大学) 

    Presentation date: 2013.09

  • 有機シラン単分子膜パターン基板を用いた癌細胞の接着能評価

    柿沼 瑛介, 益田 顕太朗, 坂本 留実, 伊藤 耕作, 松崎 賢寿, 吉川 洋史, 中林 誠一郎, 山本 英明, 品田 賢宏, 佐藤 裕子, 谷井 孝至

    第74回応用物理学会秋季学術講演会  (同志社大学) 

    Presentation date: 2013.09

  • Improving Single Dopant Detection Efficiency by Controlling Substrate Bias in Single Ion Implantation Method

    M.Hori, T.Shinada, K.Taira, A.Komatsubara, Y.Ono, T.Tanii, T.Ebdoh, I.Ohdomari

    ProceedingsofTECHCON2010  (TexasAmerica) 

    Presentation date: 2013.09

  • Fabrication of Novel Cell Chips Using In-Situ Surface Modification

    Takashi Tanii, Hideaki Yamamoto  [Invited]

    CollaborativeConferenceonMaterialsResearch(CC3DMR2013) 

    Presentation date: 2013.06

  • 素子数が規定された培養神経細胞ネットワークにおける自発的神経活動の解析

    山本英明, 森田麻裕, 出村崇徳, 河野 翔, 谷井孝至, 中村 俊

    第36回日本神経科学大会  (国立京都国際会館京都) 

    Presentation date: 2013.06

  • 有機シラン単分子膜パターン基板を用いた癌細胞の接着能評価

    柿沼 瑛介, 一澤 晃太, 益田 顕太朗, 山本 英明, 品田 賢宏, 佐藤 裕子, 谷井 孝至

    第60回応用物理学会春季学術講演会  (神奈川工科大学) 

    Presentation date: 2013.03

  • マイクロ加工基板上にパターニングされた神経細胞における極性形成(Ⅱ)

    河野翔, 山本英明, 出村崇徳, 森田麻裕, 中村俊, 谷井孝至

    第60回応用物理学会春季学術講演会  (神奈川工科大学神奈川) 

    Presentation date: 2013.03

  • 酸化チタンの光触媒作用を用いた有機シラン単分子膜の液中分解と細胞培養環境での細胞接着足場改質

    出村崇徳, 山本英明, 森田麻裕, 河野翔, 中村俊, 谷井孝至

    第60回応用物理学会春季学術講演会  (神奈川工科大学神奈) 

    Presentation date: 2013.03

  • 1 分子蛍光イメージングのための埋込型ナノ導波路の設計

    井上 あゆ

    応用物理学会  (神奈川工科大学) 

    Presentation date: 2013.03

  • 1 分子蛍光イメージングのための埋込型ナノ導波路の設計

    井上 あゆ

    応用物理学会  (神奈川工科大学) 

    Presentation date: 2013.03

  • マイクロパターン基板上の微小神経回路における自発的神経活動

    森田麻裕, 山本英明, 出村崇徳, 河野翔, 中村俊, 谷井孝至

    第60回応用物理学会春季学術講演会  (神奈川工科大学神奈川) 

    Presentation date: 2013.03

  • 緑茶カテキンが癌細胞特異的に細胞接着能を抑制する作用機序の調査

    益田 顕太朗, 一澤晃太, 柿沼瑛介, 山本 英明, Hoan Thanh Chi, 佐藤 裕子, 品田賢宏, 谷井 孝至

    第60回応用物理学会春季学術講演会  (神奈川工科大学) 

    Presentation date: 2013.03

  • ダイヤモンドへの低エネルギーイオン注入による発行センターの規則配列作製Ⅱ

    田村 崇人, 小松原 彰, 寺地 徳之, 小野田 忍, 大島 武, C.Müller, B. Naydenov, L.Mcguinness, 品田 賢宏, 磯谷 順一, F.Jelezko, 谷井 孝至

    春季第60回応用物理学関係連合講演会  (神奈川工大学神奈川) 

    Presentation date: 2013.03

  • Micropatterned neuronal network in culture as a model system of CNS local circuit

    H. Yamamoto, T. Tanii, S. Nakamura  [Invited]

    7thInternationalSymposiumonMedical,Bio-,andNano-Electronics 

    Presentation date: 2013.03

  • In-situ modification of cell-culture scaffolds by TiO2 photocatalysis

    H. Yamamoto, T. Demura, M. Morita, S. Kono, S. Nakamura, T. Tanii

    6thInternationalSymposiumonNanomedicine(ISNM2012) 

    Presentation date: 2012.11

  • Surface engineering techniques for designing neuronal networks in vitro

    H. Yamamoto, T. Tanii, S. Nakamura  [Invited]

    1stRIECInternationalSymposiumonBrainFunctionsandBrainComputer 

    Presentation date: 2012.11

  • 有機シラン単分子膜パターン基板を用いたがん細胞の接着能評価-がん転移に対する緑茶カテキンの効果の定量評価-

    柿沼瑛介, 一澤晃太, 益田顕太朗, 佐藤裕子, 谷井孝至

    第17回日本フードファクター学会学術集会第9回日本カテキン学会総会合同大会2012 

    Presentation date: 2012.11

  • Interaction Kinetics of Proteins Confined within a Nanocavity Evaluated by Real-Time Single-Molecule Fluorescence Imaging

    劉 暁宇

    InternationalMicroprocessesandNanotechnologyConference2012  (KobeHyogo) 

    Presentation date: 2012.11

  • Photocatalytic Decomposition of Organosilane Monolayer on TiO2 and its Application to In-Situ Modification of a Cell-Culture Surface

    T. Demura, H. Yamamoto, M. Morita, S. Kono, S. Nakamura, T. Tanii

    25thInternationalMicroprocessandNanotechnologyConference(MNC2012)  (KobeJapan) 

    Presentation date: 2012.11

  • Fabrication of the ordered array of optical centers in diamond by low energy ion implantation

    A.Komatsubara, T.Teraji, M.Hori, K.Kumagai, S.Tamura, T.Ohshima, S.Onoda, T.Yamamoto, C.Müller, B.Naydenov, L. McGuinness, F.Jelezko, T.Tanii

    InternationalMicroprocessesandNanotechnologyConference2012  (KobeHyogo) 

    Presentation date: 2012.11

  • Evaluated by Real-Time Single-Molecule Fluorescence Imaging

    Shou Ryu, Shun Higano, Kotaro Ohkubo, Yuji Asano, Ayu Inoue, Taro Ueno, Takashi Funatsu, Takashi Tanii

    InternationalMicroprocessesandNanotechnologyConference2012  (KobeMerikenParkOrientalHotel) 

    Presentation date: 2012.11

  • 培養海馬神経細胞の軸索決定における突起伸長の役割

    山本英明, 出村崇徳, 森田麻裕, Gary A. Banker, 谷井孝至, 中村 俊

    第35回日本神経科学大会  (名古屋国際会議場愛知) 

    Presentation date: 2012.09

  • ダイヤモンドへの低エネルギーイオン注入による発光センターの規則配列作製

    小松原 彰, 寺地 徳之, 堀 匡寛, 熊谷 国憲, 田村 崇人, 大島 武, 小野田 忍, 山本 卓, C.Müller, B.Naydenov, L.McGuinness, F.Jelezko, 谷井 孝至, 品田 賢宏, 磯谷 順一

    秋季第73回応用物理学会学術講演会  (愛媛大学愛媛) 

    Presentation date: 2012.09

  • リアルタイム1分子蛍光イメージング法を用いた金属ナノ開口内部でのシャペロニンGroELとコシャペロニンGroES間相互作用の解析

    日向野 駿, 劉 暁字, 浅野 裕次, 井上 あゆ, 大久保 幸太朗, 上野 太郎, 船津 高志, 谷井 孝至

    応用物理学会  (愛媛大学愛媛) 

    Presentation date: 2012.09

  • 低エネルギー集束イオンビームによるがん細胞のAu照射効果

    坂口 雄紀, 郷家 ひさ, 谷井 孝至, 秋本 崇之, 品田 賢宏

    秋季第73回応用物理学会学術講演会  (愛媛大学愛媛) 

    Presentation date: 2012.09

  • スパッタ法により堆積した酸化チタン膜の光触媒作用を用いた有機シラン単分子膜の液中表面改質と細胞パターニング

    森田麻裕, 出村崇徳, 山本英明, 中村 俊, 谷井孝至

    第59回応用物理学関連連合講演会  (早稲田大学東京) 

    Presentation date: 2012.03

  • リアルタイム1分子蛍光イメージング法を用いたナノ孔内部でのタンパク質間相互作用の解析

    劉 暁宇, 日向野駿, 浅野裕次, 井上あゆ, 上野太郎, 船津高志, 谷井孝至

    応用物理学会  (早稲田大学) 

    Presentation date: 2012.03

  • マイクロ加工基板上にパターニングされた神経細胞における極性形成

    山本英明, 出村崇徳, 森田麻裕, Gary Banker, 谷井孝至, 中村 俊

    第59回応用物理学関連連合講演会  (早稲田大学東京) 

    Presentation date: 2012.03

  • 単一イオン注入法を用いたヒ素イオンの位置と個数を制御したトランジスタの低温伝導特性評価

    堀 匡寛, EnricoPrati,FilippoGuagliardo, 小野行徳, 小松原彰, 熊谷国憲, 谷井孝至, 遠藤哲郎, 大泊巌, 品田賢宏

    春季第59回応用物理学関係連合講演会  (早稲田大学東京) 

    Presentation date: 2012.03

  • ヒ素イオン注入による注入イオンのストラグリング抑制効果の評価

    熊谷 国憲, 堀 匡寛, 小松原 彰, 谷井 孝至, 品田賢宏

    春季第59回応用物理学関係連合講演会  (早稲田大学東京) 

    Presentation date: 2012.03

  • ダイヤモンドへの低エネルギーイオン注入による発光センターの作製

    小松原 彰, 堀 匡寛, 熊谷 国憲, 谷井 孝至, 寺地 徳之, 磯谷 順一, 品田 賢宏

    春季第59回応用物理学関係連合講演会  (早稲田大学東京) 

    Presentation date: 2012.03

  • 有機シラン単分子膜パターン基板を用いた 緑茶カテキンを含む培養液中での細胞接着能の評価

    一澤 晃太, 益田 顕太朗, 山本 英明, 佐藤 裕子, 谷井 孝至

    第59回応用物理学会春季学術講演会  (早稲田大学) 

    Presentation date: 2012.03

  • Surface nano/micro-modification techniques for designing neuronal networks in vitro

    H. Yamamoto, T. Demura, M. Morita, T. Tanii, S. Nakamura  [Invited]

    5thInternationalSymposiumonNanomedicine(ISNM2011) 

    Presentation date: 2012.03

  • Fabrication of Artificial Neuronal Circuit by In-Situ Guidance of Individual Neurites Using Photocatalytic Decomposition of Organosilane Monolayer

    T. Tanii, T. Demura, M. Morita, H. Yamamoto, S. Nakamura  [Invited]

    3rdInternationalWorkshoponNanostructures&Nanoelectronics  (東北大学宮城) 

    Presentation date: 2012.03

  • Fabrication of Artificial Neuronal Circuit by In-Situ Guidance of Individual Neurites Using Photocatalytic Decomposition of Organosilane Monolayer

    T.Tanii, T.Demura, M.Morita, H.Yamamoto, S.Nakamura  [Invited]

    3ndInternationalWorkshoponNanostructure&Nanoelectronics  (東北大学宮城) 

    Presentation date: 2012.03

  • 人工神経細胞回路の構築のための表面ナノ/マイクロ改質技術

    山本英明, 谷井孝至, 中村俊  [Invited]

    第17回情報バイオトロニクス研究会  (東北大学、宮城) 

    Presentation date: 2012.01

  • Photocatalytic decomposition of organosilane monolayer on TiO2 under aqueous condition and its application to cell patterning

    T.Demura, H.Yamamoto, M.Morita, S.Nakamura, T.Tanii

    ISSS-6(InternationalSymposiumonSurfaceScience)  (船堀タワーホール) 

    Presentation date: 2011.12

  • Effect of Green-Tea Catechins on Normal- and Cancer-Cell Adhesiveness Evaluated Using an Organosilane-Modified Surface Pattern

    一澤晃太, 益田顕太朗, 山本英明, 佐藤裕子, 谷井孝至

    ISSS-6(InternationalSymposiumonSurfaceScience)  (タワーホール船橋) 

    Presentation date: 2011.12

  • In Situ Guidance of Individual Neuronal Processes by Wet Femtosecond-Laser Processing of Self-Assembled Monolayers

    H. Yamamoto, K. Okano, T. Demura, Y. Hosokawa, T. Tanii, S. Nakamura

    MRSFallMeeting2011 

    Presentation date: 2011.11

  • 有機シラン単分子膜パターン基板を用いた正常細胞および癌細胞の接着能に対する緑茶カテキン効果の評価

    益田 顕太朗, 一澤晃太, 山本 英明, 出村崇徳, 森田麻裕, 立花宏文, 佐藤 裕子, 谷井 孝至

    第8回日本カテキン学会  (京都平安ホテル) 

    Presentation date: 2011.09

  • 液中レーザープロセスによる細胞培養環境場での神経突起誘導

    山本英明, 岡野和宣, 谷井孝至, 出村崇徳, 細川陽一郎, 中村 俊

    第34回日本神経科学大会  (パシフィコ横浜、神奈川) 

    Presentation date: 2011.09

  • Impact of a Few Dopant Positions Controlled by Single-Ion Implantation on Transconductance of FETs

    M.Hori, T.Shinada, A.Komatsubara, Y.Ono, K.Kumagai, T.Tanii, T.Endo, I.Ohdomari

    ProceedingsofTECHCON2011  (TexasAmerica) 

    Presentation date: 2011.09

  • UVNIL リフトオフプロセスを用いた1分子蛍光観察のためのゼロモード導波路の作製

    谷井孝至, ライオネル ウォード, 劉 暁宇, 浅野裕次, 水野 潤, 上野太郎, 船津高志, 湯川隆生

    第72回応用物理学会学術講演会  (山形大学) 

    Presentation date: 2011.09

  • 砒素イオン注入によるドーパント位置制御効果

    小松原 彰, 堀 匡寛, 小野 行徳, 谷井 孝至, 遠藤 哲郎, 大泊 巌, 品田 賢宏, 熊谷 国憲

    秋季第72回応用物理学会学術講演会  (山形大学, 山形) 

    Presentation date: 2011.09

  • 単一イオン注入法による位置と個数を制御したデバイスの低温伝導特性評価

    堀 匡寛, Enrico Prati, Filippo Guagliardo, 小野 行徳, 小松原 彰, 熊谷 国憲, 谷井 孝至, 遠藤 哲郎, 大泊 巌, 品田 賢宏

    秋季第72回応用物理学会学術講演会  (山形大学, 山形) 

    Presentation date: 2011.09

  • 酸化チタンの光触媒作用を用いた細胞接着表面の液中パターニング

    出村崇徳, 山本英明, 森田麻裕, 一澤晃太, 益田顕太朗, 細川陽一郎, 中村 俊, 谷井孝至

    第72回応用物理学会学術講演会  (山形大学、山形) 

    Presentation date: 2011.08

  • 液中レーザープロセスによる細胞培養環境場での神経突起誘導とその機構

    山本英明, 岡野和宣, 出村崇徳, 細川陽一郎, 谷井孝至, 中村 俊

    第72回応用物理学会学術講演会  (山形大学、山形) 

    Presentation date: 2011.08

  • Impact of a few Dopant Positions Controlled by Single-Ion Implantation on Transconductance of FETs

    M.Hori, Y.Ono, A.Komatsubara, K.Kumagai, T.Tanii, T.Endoh, I.Ohdomari, T.Shinada

    11thInternationalWorkshoponJunctionTechnology(IWJT2011)  (KyotoJapan) 

    Presentation date: 2011.06

  • ドーパント位置制御による電界効果トランジスタの 相互コンダクタンス評価

    堀 匡寛, 品田 賢宏, 平 圭吾, 小松原 彰, 小野 行徳, 谷井 孝至, 遠藤 哲郎, 大泊 巌

    春季第58回応用物理学関係連合講演会  (神奈川工大学, 神奈川) 

    Presentation date: 2011.03

  • 基板バイアス印加による単一イオン個数制御性の 検証

    堀 匡寛, 品田 賢宏, 平 圭吾, 小松原 彰, 小野 行徳, 谷井 孝至, 遠藤 哲郎, 大泊 巌

    春季第58回応用物理学会学術講演会  (神奈川工大学, 神奈川) 

    Presentation date: 2011.03

  • 液中レーザプロセスによる細胞培養環境場での神経突起誘導

    山本英明, 岡野和宣, 谷井孝至, 出村崇徳, 細川陽一郎, 増原宏, 中村俊

    第58回応用物理学関連連合講演会  (神奈川工科大学、神奈川) 

    Presentation date: 2011.03

  • 酸化チタンの光触媒作用を用いた液中神経突起誘導

    出村崇徳, 一澤晃太, 山本英明, 中村俊, 谷井孝至

    4大学ナノ・マイクロファブリケーションコンソーシアム拠点形成シンポジウム  (川崎市産業振興会館、神奈川県) 

    Presentation date: 2011.03

  • Fabrication of Zero-Mode Waveguide by Ultraviolet Nanoimprint Lithography Lift-Off Process

    J. Wada, S. Ryu, Y. Asano, T. Yukawa, J. Mizuno, T. Tanii

    InternationalMicroprocessesandNanotechnologyConference2010 

    Presentation date: 2010.11

  • A Relative-Story Displacement Sensor Resolving the Angular Error Problem

    I. Matusya

    IEEESENSORS2010Conference 

    Presentation date: 2010.11

  • Evaluation of Cell Adhesion Using Organosilane Monolayer Template

    佐々木康祐, 出村崇徳, 一澤晃太, 山本英明, 谷井孝至, Hoan Anh Vu, Hoan Thanh Chi, 佐藤裕子

    ICOS2010  (静岡県コンベンションアーツセンター) 

    Presentation date: 2010.10

  • 局所変形角と相対変位を測定可能な構造ヘルスモニタリング用層間変位センサの開発

    松谷 巌

    日本機械学会M&M2010材料力学カンファレンス  (長岡技術科学大学、新潟) 

    Presentation date: 2010.10

  • 建築構造物の層間変位と局所傾斜角の同時計測システムの開発

    佐藤摩弥

    秋季第71回応用物理学会学術講演会  (長崎大学、長崎) 

    Presentation date: 2010.09

  • 有機シラン自己組織化単分子膜上での初代培養神経細胞のパターニング

    山本英明, 谷井孝至, 中村俊

    第71回応用物理学会学術講演会  (長崎大学、長崎) 

    Presentation date: 2010.09

  • 局所回転角度と層間変位の同時計測を可能にする非接触式センサの検討

    松谷 巌

    電気学会基礎・材料・共通部門大会  (琉球大学、沖縄) 

    Presentation date: 2010.09

  • 非接触型センサを用いた建物の層間変位計測システム その2 PSD層間変位センサの基本特性

    松谷 巌

    日本建築学会大会,構造II  (富山大学、富山) 

    Presentation date: 2010.09

  • An Experimental Study on Relative Displacement Direct Sensing in Real-Time using Phototransistor Array for Building Structures

    I. Matusya

    Presentation date: 2010.07

  • Enhancement of Electron Transport Property in FET with Asymmetric Ordered Dopant Distribution

    M.Hori, T.Shinada, K. Taira, T.Tanii, Y.Ono, T.Endoh, I.Ohdomari

    Presentation date: 2010.06

  • ナノ改質を施したスライドガラス上での神経細胞のパターニング

    山本英明, 谷井孝至, 中村俊

    日本分子生物学会第10回春期シンポジウム  (ホテル松島大観荘、宮城県) 

    Presentation date: 2010.06

  • Single Molecule Fluorescence Imaging Using Nano- structure Array

    T.Tanii  [Invited]

    2ndNIMS(MANA)-WasedaInternationalSymposium2010年12月 

▼display all

Research Projects

  • 単一NVセンター配列を用いたタンパク質の1分子量子計測

    日本学術振興会  科学研究費助成事業

    Project Year :

    2022.04
    -
    2025.03
     

    谷井 孝至, 星野 忠次

  • In Vitro Reconstitution of Multicellular Computing Systems

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research

    Project Year :

    2021.08
    -
    2024.03
     

  • Development of single dopant circuit by deterministic doping and application to stochastic processing

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research

    Project Year :

    2018.04
    -
    2023.03
     

  • ダイヤモンド表面での実神経細胞回路構築とNVセンタを用いた自発発火活動の長期計測

    Project Year :

    2018.06
    -
    2021.03
     

     View Summary

    光検出磁気共鳴計測を活用してダイヤモンド表面に構築した神経細胞回路の自発発火を表面近傍のNVセンターを介して計測できる手法を構築する。具体的には,(1)ガラス基板上で培ってきた,表面マイクロパターニングによる神経細胞回路の構築法を,これまで神経細胞足場として活用されたことがないダイヤモンド表面でも実行可能にする第1段階と,(2)ダイヤモンド表面に構築した実神経細胞回路を伝搬するパルス電流を,NVセンタを磁気プロ―ブとする光検出磁気共鳴法によって,リアルタイムかつ長期間にわたって計測できる方法論を構築する第2段階とからなる。2018年度には共焦点顕微鏡上で長期間にわたって神経細胞を培養できる環境の構築と、上記(1)の段階に着手した。前者については、共焦点顕微鏡のステージにマウントできる小型の細胞培養装置を自作し、やはり自作した小型の温湿度および二酸化炭素濃度制御装置にそれを接続した。温湿度および二酸化炭素濃度の制御に関する問題は今のところ見られていない。ダイヤモンド基板を介して神経細胞と対物レンズとの間に励起光および蛍光を通す必要があるが、この部分の設計・試作については2019年度に持ち越すこととした。後者の(1)については、Ibダイヤモンド(100)基板表面を窒素終端したもの、またはその表面にポリリジンをコートしたものを用意し、ラット初代培養を行って、神経細胞の接着および成長を評価した。当初期待した窒素終端表面に神経細胞は接着せず、ポリリジンコート表面で神経細胞は遜色なく成長することを見出した。共焦点顕微鏡に搭載する小型の細胞培養装置を自作することにより、やはりそれまでに自作されていた共焦点顕微鏡のステージに整合性よくマウントできたため。これにより、ダイヤモンド基板と対物レンズとの間の仕様についても2019年度に問題なく進められる見通しである。上記の(1)第1段階と,(2)第2段階とのうち、2019年度に(1)を完了し、2020年度に向けて順次(2)に移行する方針をとる。第一段階では、①CVDダイヤモンド表面に対する電子線リソグラフィとプラズマ処理によるダイヤモンド表面終端基(酸素終端表面/水素終端表面)のパターニング(連携者:早稲田大・川原田洋教授)、②接着分子の自己吸着特性を利用した神経細胞の足場パターン(細胞接着表面/細胞非接着表面)の形成、③胎生18日ラット大脳皮質神経細胞の播種とパターン形状に沿った神経細胞の長期培養法の構築を行う。第2段階では、下記①から③の実験を通して、ダイヤモンド上の神経細胞回路の自発発火をNVセンターで捕捉する:①単一NVセンター配列およびアンサンブル系(δドープ層)上に構築したモデル系(金属配線等)を用いた直流磁場計測、②単一NVセンター配列上への神経細胞回路のアライメントおよび長期培養と自発発火計測、③NVセンターのアンサンブル系(δドープ層)での長期培養と自発発火計測を試みる

  • ダイヤモンドNVセンタを活用する光パルス磁気共鳴法の創薬応用を目指した高度化

    Project Year :

    2017.04
    -
    2020.03
     

     View Summary

    医薬品開発における薬物探索など、創薬への応用展開を念頭に、1分子のタンパク質を標的とする光パルス磁気共鳴法の実行可能性評価を行う。このために、標的タンパク質と薬物候補の結合状態を、ダイヤモンド基板表面の浅い窒素-空孔複合欠陥を用いた光パルス磁気共鳴法を用いて測定することが本研究の最終目標である。2017年度に共焦点顕微鏡の光学系のセットアップと改良を行ったが、2018年度には光パルス磁気共鳴法の実装を行い、単一NVセンタの単一電子スピン操作およびスピン状態の計測を室温で実行できることを確認した。具体的にはローエンドFPGAを用いて、電子回路を自作のHDLで記述し、その周辺回路を自作した。これにより汎用装置に比して1/50程度まで安価に実装できることを示した(2019年春季応用物理学会Poster Award)。並行して、1分子のタンパク質を標的とする光パルス磁気共鳴法の実装を行った。具体的には、ダイヤモンド表面にナノスケールの微小容器(これに1分子タンパク質閉じ込める)を形成し、その容器の直下に単一NVセンタを形成するプロセスを構築した。12C濃縮CVDダイヤモンド(100)薄膜に電子線リソグラフィー、窒素イオン注入、ICPドライエッチングを行うことにより、微小容器形成とその直下の単一NVセンタの形成を試みた。ダイヤモンド表面近傍に単一NVセンターを配列形成でき、それらすべてがナノNMR応用(ダイヤモンド表面の少数個のプロトン検出)に適用できることを示した(2018年秋季応用物理学会Poster Award)。ドライエッチングとの組み合わせにより、さらに微小容器を自己整合的に形成でき、原子間力顕微鏡と共焦点顕微鏡観察により配列形成した微小容器の直下に単一NVセンタが形成できていること、加えて、単一NVセンタが十分な電荷安定性およびコヒーレンス特性を示すことを確認した。12C濃縮CVDダイヤモンド(100)薄膜に電子線リソグラフィー、窒素イオン注入、ICPドライエッチングを行うことにより、微小容器形成とその直下の単一NVセンタの形成できることは当初から予想できていたが、それらが十分な電荷安定性およびコヒーレンス特性を示すかどうかについては、試作するまで不明であった。今回の初めての試作で十分な電荷安定性およびコヒーレンス特性を獲得できたため。これまでの研究実施により、光学測定系のセットアップおよびダイヤモンドの加工をおおむね完了できたので、最終年度には最終目標である1分子のタンパク質を標的とする光パルス磁気共鳴法の実行可能性評価を行う。特に、ダイヤモンド表面に微小容器を配列形成することにより、その中の少数個の分子の並進・回転運動を妨げないが、微小容器直下の単一NVセンターの観察体積外への分子拡散を防止できることのメリットを十分に引き出す。このため、タンパク質だけでなく小分子(例えばH2O)のナノNMRも試みる

  • Realization of several-qubit quantum register by fabrication of nanoscale-array of NV centers in diamond

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research

    Project Year :

    2014.04
    -
    2017.03
     

    ISOYA Junichi, SUMIYA Hitoshi, Fedor Jelezko

     View Summary

    Firstly, we have developed fabrication methods of introducing strong mutual interactions into NV centers which have excellent properties as quantum spins at room temperature. By implanting molecular nitrogen ions through masks with regularly arranged nano-holes, multi-NV centers having the distances of ~13nm have been fabricated as regular arrays. By fabricating a three-dimensional ensemble of NV centers of an average distance of ~5 nm, the creation of the discrete time crystal has been experimentally demonstrated. Secondly, nano-hole implantation has been applied for fabricating regular array of quantum sensors of shallow single NV centers. In nano-NMR, by combining high field measurements, quantum algorisms, and high-quality HPHT crystal, high resolution detecting chemical shift has been achieved for samples of ultra-micro quantity. By the growth of high quality CVD crystals, the generation of indistinguishable single photons from separate SiV- centers has been demonstrated

  • Development of a fluorescence correlation spectroscopy for rotational diffusion measurements

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research

    Project Year :

    2014.04
    -
    2017.03
     

    Terada Sumio, TANII Takashi, KONDO Takao, JIN Takashi, TANI Tomomi, KINJO Masataka

     View Summary

    As rotational properties sensitively reflect molecular interactions and intracellular environment, polarization-dependent fluorescence correlation spectroscopy can be a promising method to analyse various cell biological events. We constructed both new polarization-dependent fluorescence correlation spectroscopy and an analysis program for this purpose. In addition, we could develop new methods to label proteins of interests for our analysis

  • Development of novel techniques for single-molecule fluorescence imaging of various biomolecules

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research

    Project Year :

    2014.04
    -
    2017.03
     

    TANII Takashi

     View Summary

    In order to enhance the ability of single-molecule fluorescence imaging (SMFI) that enables to detect binding and dissociation events of bio-molecules in real time using zero-mode waveguides (ZMWs), we propose a novel technique to combine fluorescence resonance energy transfer (FRET) and SMFI with ZMWs, and proved experimentally that the proposed method is feasible. We also tried to extend the ability of this technique by demonstrating SMFI of individual DNA aptamers for sensing application, SMFI of DNA strand scission by endonuclease, and in-situ cell patterning

  • Control of quantum material properties by deterministic doping method

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research

    Project Year :

    2013.04
    -
    2017.03
     

    Shinada Takahiro, TABE Michiharu, ISOYA Junichi

     View Summary

    The first purpose of this study was to establish a deterministic doping method that realizes doping to regions of 10 nm or less and is applicable to next generation devices.The second purpose was to control physical properties of quantum devices including single dopant silicon devices and single silicon - vacancy diamond devices. Specifically, we have developed (1) a single dopant doping process module in the region of 10 nm or less. We succeeded in observation and control of (2) quantum transport in single dopant silicon devices and (3) luminescence from single dopant silicon - vacancy in diamonds. Establishment of the deterministic doping method contributing to the future extension of CMOS technology and realization of its quantum physical property control are major achievements

  • In-Situ Single-Molecule Fluorescence Imaging of Membrane Protein Interaction Using Nano-Structured Glass Plate

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research

    Project Year :

    2008.04
    -
    2013.03
     

    TANII Takashi

     View Summary

    For in-situ single-molecule fluorescence imaging of membrane proteins, we investigated the structure of nano-waveguides using computational optics simulation, followed by fabrication of the waveguides on glass substrates. We studied the feasibility of the waveguides for real-time single-molecule imaging in relation to the waveguide structure. We have developped processes for the fabrication of both etched waveguides and planer waveguides. We showed that the protein-protein interaction can be fluorescently detected with the etched waveguide, and also that the signal-to-noise ratio of the etched waveguide is six times the conventional waveguide. Although we have not yet succeeded in observing menbrain protein interaction using the palner waveguide, we constructed the elemental techniques for the observation, and have succeeded in detecting the single-molecule fluorescence using the planer waveguide

  • Real-Time Scanning Tunneling Microscopy of Nano-Scale Surface Modification by Dopant Ion Irradiation

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research

    Project Year :

    2008
    -
    2010
     

    OHDOMARI Iwao, TANII Takashi, WATANABE Takanobu

     View Summary

    A scanning tunneling microscope system has been developed to observe in real-time the surface modification induced by ion irradiation for the purpose of understanding atomistic behaviors of implanted dopant atoms in nano-scale semiconductor devices. We have succeeded in imaging the formation and annihilation processes of ion-induced structures on thermally treated and passivated silicon surfaces. Basic studies have also been performed experimentally and by using computer simulations on electronic conduction mechanisms in future nano-scale three-dimensional devices

  • シリコンナノ構造配列を用いた微小電子源の開発

     View Summary

    申請者らが発見したシリコン基板のイオン照射減速エッチング現象を用いて、簡便かつ高性能な冷陰極型の微小電子源を作製するプロセスを構築することを目的として研究を行った。イオン照射減速エッチング現象とは、電子デバイス製造のためのイオン注入技術をナノ加工に応用したもので、イオン注入を施した部位に、ウェハスケールで選択的にナノ構造を作製する技術である。このイオン照射減速エッチングを利用して、これまでに、ダブルゲート型MOSFETや、2極管構造の電界放出素子の作製が達成されていたが、ゲート電極つきの3極管構造や、さらに先端にカーボンナノチューブなどの修飾を行った例はこれまでに実現されていなかった。特にイオン照射減速エッチングは注入したイオン種に依存しないので、触媒金属を打ち込むことによって、カーボンナノチューブなどの電子放出特性のよい材料を選択的にエミッタ先端に修飾することができ、電子放出特性を大幅に改善することが可能となる。我々がこの方針で研究を行った結果、主として下記の3つの成果を獲得した。(1)イオン照射減速エッチングを用いて、ゲート電極を有する3極管構造をナノスケールで実現できるプロセスを構築し、閾値電圧3oVで安定な電子放出を実現した。(2)Niイオンを触媒として注入することにより、シリコンのナノ加工(Niイオン照射減速エッチング)と同時に、注入イオンを核とした選択的な繊維状カーボンの修飾に成功した(特許出願中)。(3)W針の先端に単層のカーボンナノチューブを選択的に、高いスループットで修飾する技術を開発し、閾値電圧の低減と電子放出の時間安定化を実現した

  • ナノ開口基板を用いたシャペロニンGroELの1分子機能解析

     View Summary

    本研究では、シャペロニンGroELの両側に2個のGroESが同時に結合したFootball型複合体(FB)の有無を明らかにし、1分子解析を通じてそのタイミングを明らかにしようとしている。今年度、蛍光共鳴エネルギー移動(FRET)を指標にすることで、蛍光分光器を用いてGroELとGroESの結合率の測定に成功し、1)FBは、反応サイクルの約40%で形成されている2)GroELへ2個目のGroESが結合できるのは、GroESが約300nM以上になったときである2)FBの形成率は、ADPにより著しく阻害される3)ATP加水分解が非常に遅い変異GroEL(D398A)はFBを形成する ことを明らかにし、従来の反応サイクルのモデルを大きく訂正する必要性を示した(Sameshima et.al.,投稿中)。さらにFBの形成過程を詳細に理解するため、昨年度開発したナノ開口基板を用いて、500nM蛍光標識GroESと4.5uM無標識GroES存在下でGroELとの結合解離反応を1分子解析した。蛍光分光器の実験結果から、大腸菌内の発現濃度と同じ約5μMのGroES存在下ではFBが形成されることが分かっている。事前の予想とは異なり、GroELとGroESの結合時間は、FBが形成されない20nM GroES存在下での1分子解析の結果と同じであった。そこで、FBが形成される様子を直接可視化するため、500nM Cy3-GroESと500nM Cy5-GroES存在下で、ナノ開口基板上に固定されたGroELへの相互作用を観察した。ほとんどの場合、両側のリングにGroESが交互に結合解離を繰り返していたが、同時にCy3-GroESとCy5-GroESが結合している状態も観察された。現在、その詳細を解析している

  • ナノ加工スライドガラスを用いた次世代一分子イメージング法の開発

     View Summary

    従来の一分子蛍光イメージング法では観察不可能であった、大きな解離定数を有する弱い生体分子間相互作用を観察できる次世代のイメージング法を開発することを目的として本研究を推進した。この新手法は、生体分子を固定するスライドガラスに金属のナノ開ロを配列形成し、そのナノ開口内に閉じ込められる近接場をプローブとして一分子同士の相互作用をリアルタイムで可視化する。すなわち、溶液中に浮遊する多数のタンパク質の中の1分子が、ナノ開口内に固定したタンパク質1分子と結合・解離する瞬間を観察可能にするものである。(1)金属ナノ開口の形状とタンパク質の配置を工夫することにより、原理的に10μMの高濃度色素存在下で一分子イメージングできることを計算機シミュレーションにより明らかした。(2)「金属ナノ開口形状とタンパク質配置」に関する2種類の実現方法を特許出願した。具体的には、金属ナノ開口の底部を掘り下げ、観察領域をニアフィールドではなく、ファーフィールドに配置することが、高いS/Nと信号強度を同時に獲得できる鍵となる。(3)一分子蛍光強産とS/N比を実測し、1μMまでの高濃度色素存在下においては明瞭に一分子観察できることを証明した。これ以上の濃度においては、背景光ノイズが上昇しS/N比が低下し始める。(4)シャペロニンGroELとコシャペロニンGroESをモデルタンパク質として用い、1μMの蛍光標識GroES溶液中でのGroEL-GroES間一分子相互作用リアルタイムイメージングに成功した。(5)これまで提唱されていた、GroEL-GroES間の結合モデルに関する2つの相矛盾する定説、すなわち「フットボール型結合モデル」と「ツーストローク型結合モデル」に関して検証し、後者の妥当性を明らかにした

▼display all

Misc

  • Spin characterization of NV ensembles on high-concentration nitrogen-doped CVD diamonds

    上田真由, 早坂京祐, 金久京太郎, 蔭浦泰資, 蔭浦泰資, 河合空, 大谷和毅, 上田優樹, 齋藤悠太, 谷井孝至, 小野田忍, 磯谷順一, 榎本心平, 河野省三, 川原田洋, 川原田洋

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   82nd  2021

    J-GLOBAL

  • Development of Quantum Sensor Using Wide Bandgap Semiconductor

    小野田忍, 大島武, 磯谷順一, 寺地徳之, 川原田洋, 谷井孝至, 加田渉, 波多野睦子, 波多野睦子

    電気学会研究会資料   ( EDD-20-036-044 )  2020

    J-GLOBAL

  • Self-align fabrication of nano-reservoirs with NV centers in diamond for high-resolution nano-NMR

    齋藤悠太, 石井邑, 川勝一斗, 永岡希朗, 畑雄貴, 中村洸介, 榎田尊昭, XU H., 薗田隆弘, 立石哲也, 金久京太郎, 寺地徳之, 小野田忍, 樋口泰成, 樋口泰成, 山田圭介, 大島武, 品田高宏, 川原田洋, 加田渉, 花泉修, 磯谷順一, 谷井孝至

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   67th  2020

    J-GLOBAL

  • 窒素終端(111)ダイヤモンドを用いて作製した高配向2次元NVアンサンブル

    金久京太郎, 立石哲也, 薗田隆弘, BUENDIA Jorge J., 蔭浦泰資, 蔭浦泰資, 川勝一斗, 畑雄貴, 永岡希朗, 石井邑, 谷井孝至, 小野田忍, 春山盛善, STACEY Alastair, 寺地徳之, 磯谷順一, 河野省三, 川原田洋, 川原田洋

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   80th  2019

    J-GLOBAL

  • イオン注入による単一不純物欠陥の規則的配列形成とその応用-ダイヤモンド中浅い単一NVセンターの配列形成-

    谷井孝至, 品田高宏, 寺地徳之, 小野田忍, 大島武, MCGUINNESS Liam P., JELEZKO Fedor, LIU Yan, WU E, 加田渉, 花泉修, 川原田洋, 磯谷順一

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   66th  2019

    J-GLOBAL

  • C5N4Hnイオン注入による双極子結合したNVセンターの形成

    春山盛善, 春山盛善, 小野田忍, 樋口泰成, 樋口泰成, 加田渉, 千葉敦也, 平野貴美, 寺地徳之, 五十嵐龍治, 河合空, 川原田洋, 石井邑, 石井邑, 福田諒介, 福田諒介, 谷井孝至, 磯谷順一, 大島武, 花泉修

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   66th  2019

    J-GLOBAL

  • 高被覆率窒素終端(111)ダイヤモンドの作製

    立石哲也, 薗田隆弘, 河合空, 山野颯, BUENDIA Jorge J., 蔭浦泰資, 石井邑, 永岡希朗, 福田諒介, 谷井孝至, 春山盛善, 春山盛善, 山田圭介, 小野田忍, 加田渉, 花泉修, STACEY Alastair, 神田一浩, 上村雅治, 上村雅治, 寺地徳之, 磯谷順一, 河野省三, 川原田洋, 川原田洋

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   66th  2019

    J-GLOBAL

  • 浅い単一NVセンターの規則配列を用いたナノNMRのスピンノイズ解析

    石井邑, 福田諒介, BALASUBRAMANIAN Priyadharshini, 東又格, 永岡希朗, 河合空, 薗田隆弘, 寺地徳之, 小野田忍, 春山盛善, 春山盛善, 山田圭介, 稲葉優文, 稲葉優文, 山野颯, STUERNER Felix M, SCHMITT Simon, MCGUINNESS Liam P, JELEZKO Fedor, 大島武, 品田高宏, 川原田洋, 加田渉, 花泉修, 磯谷順一, 谷井孝至

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   79th   ROMBUNNO.20a‐PB9‐12  2018.09

    J-GLOBAL

  • 窒素終端ダイヤモンド中の浅いNVセンターを用いたNMR測定(II)

    立石哲也, 薗田隆弘, 河合空, 山野颯, BUENDIA Jorge J., 蔭浦泰資, 石井邑, 永岡希朗, 福田諒介, 谷井孝至, 春山盛善, 春山盛善, 山田圭介, 小野田忍, 加田渉, 花泉修, STACEY Alastair, 神田一浩, 上村雅治, 上村雅治, 寺地徳之, 磯谷順一, 河野省三, 川原田洋, 川原田洋

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   79th  2018

    J-GLOBAL

  • 窒素終端ダイヤモンド中の浅いNVセンターを用いたNMR測定

    薗田隆弘, 河合空, 山野颯, 加藤かなみ, BUENDIA J. J., 蔭浦泰資, 石井邑, 福田諒介, 岡田拓真, 春山盛善, 春山盛善, 谷井孝至, 山田圭介, 小野田忍, 加田渉, 花泉修, STACEY A., 寺地徳之, 河野省三, 磯谷順一, 川原田洋, 川原田洋

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   65th  2018

    J-GLOBAL

  • 表面終端がダイヤモンド中の浅いNVセンターへ与える影響

    河合空, 山野颯, 梶家美貴, 加藤かなみ, 蔭浦泰資, 稲葉優文, 福田諒介, 岡田拓真, 東又格, 春山盛善, 春山盛善, 谷井孝至, 山田圭介, 小野田忍, 寺地徳之, 加田渉, 花泉修, 磯谷順一, 川原田洋, 川原田洋

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   64th   ROMBUNNO.14a‐412‐3  2017.03

    J-GLOBAL

  • 浅い単一NVセンターの規則的配列を用いた表面の水素核スピンの検出

    福田諒介, 東又格, 岡田拓真, 加賀美理沙, 寺地徳之, 小野田忍, 春山盛善, 春山盛善, 山田圭介, 稲葉優文, 山野颯, BALASUBRAMANIAN P, STUERNER F, SCHMITT S, MCGUINNESS L.P, JELEZKO F, 大島武, 品田高宏, 川原田洋, 加田渉, 花泉修, 磯谷順一, 谷井孝至

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   64th   ROMBUNNO.14a‐412‐6  2017.03

    J-GLOBAL

  • N‐V中心NMRのためのダイヤモンド表面の電荷安定性

    川原田洋, 川原田洋, 山野颯, 河合空, 梶家美貴, 加藤かなみ, 蔭浦泰資, 稲葉優文, 岡田拓真, 東又格, 春山盛善, 春山盛善, 谷井孝至, 山田圭介, 小野田忍, 寺地徳之, 加田渉, 花泉修, 磯谷順一

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   64th   ROMBUNNO.15p‐F205‐5  2017.03

    J-GLOBAL

  • 窒素ラジカル暴露処理で形成された窒素終端ダイヤモンドの表面構造解析

    蔭浦泰資, 河合空, 山野颯, 薗田隆弘, BUENDIA J.J., 谷井孝至, 春山盛善, 春山盛善, 山田圭介, 小野田忍, 加田渉, 花泉修, 寺地徳之, 磯谷順一, STACEY A., 河野省三, 河野省三, 川原田洋, 川原田洋

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   78th  2017

    J-GLOBAL

  • 窒素終端およびシリコン終端ダイヤモンド中の浅いNVセンターのスピン特性

    薗田隆弘, 河合空, 山野颯, 加藤かなみ, 蔭浦泰資, 福田諒介, 岡田拓真, 春山盛善, 春山盛善, 谷井孝至, 山田圭介, 小野田忍, 寺地徳之, 加田渉, 花泉修, 河野省三, 河野省三, 磯谷順一, 川原田洋, 川原田洋

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   78th  2017

    J-GLOBAL

  • イオン注入による原子空孔の形成とNVセンターへの変換効率

    小野田忍, 立見和雅, 春山盛善, 春山盛善, 寺地徳之, 磯谷順一, 山田圭介, 谷井孝至, 川原田洋, 品田高宏, 加田渉, 花泉修, 大島武

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   64th  2017

    J-GLOBAL

  • DNAのNMR検出に向けた部分NH2終端ダイヤモンド中の浅いNVセンター

    梶家美貴, 加藤かなみ, 河合空, 山野颯, SUAEBAH Evi, 蔭浦泰資, 稲葉優文, 東又格, 春山盛善, 春山盛善, 谷井孝至, 山田圭介, 小野田忍, 寺地徳之, 加田渉, 花泉修, 磯谷順一, 河野省三, 川原田洋, 川原田洋

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   77th   ROMBUNNO.13p‐A26‐8  2016.09

    J-GLOBAL

  • 表面終端による浅いNVセンターの電荷状態

    加藤かなみ, 山野颯, 蔭浦泰資, 瀬下裕志, 稲葉優文, 東又格, 小池悟大, 谷井孝至, 磯谷順一, 寺地徳之, 小野田忍, 春山盛善, 加田渉, 花泉修, 川原田洋

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   63rd  2016

    J-GLOBAL

  • 磁気センサー応用に向けた単一のNVセンターの作製と状態の評価

    山野颯, 加藤かなみ, 蔭浦泰資, 稲葉優文, 東又格, 小池悟大, 春山盛善, 春山盛善, 谷井孝至, 小野田忍, 寺地徳之, 加田渉, 花泉修, 磯谷順一, 川原田洋

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   63rd  2016

    J-GLOBAL

  • 表面酸化によるダイヤモンド中の浅いNVセンターのコヒーレンス特性

    河合空, 山野颯, 梶家美貴, 加藤かなみ, 蔭浦泰資, 稲葉優文, 岡田拓真, 東又格, 春山盛善, 春山盛善, 谷井孝至, 山田圭介, 小野田忍, 寺地徳之, 加田渉, 花泉修, 磯谷順一, 川原田洋, 川原田洋

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   77th  2016

    J-GLOBAL

  • ナノホールレジストマスクを用いたNVセンター配列の作製 II

    岡田拓真, 東又格, 加賀美理沙, 寺地徳之, 小野田忍, 山田圭介, 春山盛善, 春山盛善, 稲葉優文, 山野颯, BALASUBRAMANIAN Priyadharshini, NAYDENOV Boris, MCGUINNESS Liam, JELEZKO Fedor, 大島武, 品田高宏, 川原田洋, 加田渉, 花泉修, 磯谷順一, 谷井孝至

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   77th  2016

    J-GLOBAL

  • ナノホールレジストマスクを用いた低エネルギーイオン注入による量子センシングのためのNVセンター配列の作製

    東又格, 岡田拓真, 加賀美理沙, 寺地徳之, 小野田忍, 春山盛善, 春山盛善, 山田圭介, 稲葉優文, 山野颯, BALASUBRAMANIAN Priyadharshini, MCGUINNESS Liam P, NAYDENOV Boris, JELEZKO Fedor, 大島武, 品田高宏, 川原田洋, 加田渉, 花泉修, 磯谷順一, 谷井孝至

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   77th  2016

    J-GLOBAL

  • イオン注入を用いたSiVセンターの作製と生成収率のエネルギー依存性評価

    加賀美理沙, 東又格, 岡田拓真, 寺地徳之, 小野田忍, 春山盛善, 春山盛善, 大島武, 品田高宏, 加田渉, 花泉修, 磯谷順一, 谷井孝至

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   77th  2016

    J-GLOBAL

  • Nano-scale patterning of functional molecules for biomolecule detection and cell manipulation

    Yamamoto H, Tanii T

    Molecular Electronics and Bioelectronics   24 ( 4 ) 266 - 271  2013.11

    Article, review, commentary, editorial, etc. (other)  

  • ダイヤモンドへの低エネルギーイオン注入による発光センターの作製

    小松原彰, 堀匡寛, 熊谷国憲, 谷井孝至, 寺地徳之, 磯谷順一, 品田賢宏

    応用物理学関係連合講演会講演予稿集(CD-ROM)   59th  2012

    J-GLOBAL

  • ダイヤモンドへの低エネルギーイオン注入による発光センターの規則配列作製

    小松原彰, 寺地徳之, 堀匡寛, 熊谷国憲, 田村崇人, 大島武, 小野田忍, 山本卓, MUELLER Christoph, NAYDENOV Boris, MCGUINNESS Liam, JELEZKO Fedor, 谷井孝至, 品田賢宏, 磯谷順一

    応用物理学会学術講演会講演予稿集(CD-ROM)   73rd  2012

    J-GLOBAL

  • 液中レーザプロセスによる細胞培養環境場での神経突起誘導

    山本英明, 山本英明, 岡野和宣, 岡野和宣, 谷井孝至, 谷井孝至, 出村崇徳, 細川陽一郎, 増原宏, 中村俊

    応用物理学関係連合講演会講演予稿集(CD-ROM)   58th  2011

    J-GLOBAL

  • 液中レーザープロセスによる細胞培養環境場での神経突起誘導とその機構

    山本英明, 山本英明, 岡野和宣, 岡野和宣, 出村崇徳, 細川陽一郎, 谷井孝至, 谷井孝至, 中村俊

    応用物理学会学術講演会講演予稿集(CD-ROM)   72nd  2011

    J-GLOBAL

  • Protein adsorption on self-assembled monolayers induced by surface water molecule

    Yuzo Kanari, Yusuke Shoji, Hirotaka Ode, Takeo Miyake, Takashi Tanii, Tyuji Hoshin, Iwao Ohdomari

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   46 ( 9B ) 6303 - 6308  2007.09

     View Summary

    Three types of self-assembled monolayers (SAMs) are employed for the investigation of protein adsorption. An octadecylsilane (ODS) SAM, a fluoroalkylsilane (FAS) SAM, and a polyethylene glycol (PEG) SAM are selected as examples. The amount of adsorbed protein is measured by fluorescent microscopy. A molecular dynamics (MD) simulation is carried out for modeling both the molecular structures of the SAMs and the water structure on the SAMs. A hydrophilic PEG SAM prevents protein adsorption, while a large amount of adsorption is observed on a hydrophobic ODS SAM. In spite of the hydrophobicity, an FAS SAM prevents protein adsorption as well as a PEG SAM. MD calculation suggests that the existence of surface-bound water on an ODS SAM induces protein, adsorption. In the case of the FAS SAM, owing to the electrostatic interaction and the flexibility of the precursor, the water molecule is not bound to the surface and protein adsorption is suppressed.

    DOI CiNii

  • ナノ開口基板を用いたシャペロニンGroELの1分子機能解析

    上野 太郎, 谷井 孝至, 島本 直伸, 三宅 丈雄, 園部 弘典, 大泊 巌, 庄子 習一, 船津 高志

    バイオイメージング   15 ( 2 ) 173 - 174  2006.10

    CiNii

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Industrial Property Rights

  • 変位計測装置

    5610427

    谷井 孝至, 仁田 佳宏, 金川 清, 松谷 巌, 大泊 巌, 西谷 章, 庄子 習一

    Patent

  • 変位計測装置

    5544619

    松谷 巌, 大泊 巌, 西谷 章, 庄子 習一, 谷井 孝至, 仁田 佳宏, 金川 清

    Patent

  • 傾斜角度測定器

    庄子 習一, 仁田 佳宏, 谷井 孝至, 大泊 巌, 西谷 章, 金川 清, 松谷 巌, 冨士 良太

    Patent

  • 変位計測装置、及び変位計測方法

    谷井 孝至, 金川 清, 松谷 巌, 大泊 巌, 西谷 章, 庄子 習一, 仁田 佳宏

    Patent

  • 変位計測システムを用いた建築物の施工管理方法

    5137875

    庄子 習一, 谷井 孝至, 松谷 巌, 大泊 巌, 西谷 章, 仁田 佳宏, 金川 清

    Patent

  • 検出装置及び検出方法

    5188844

    谷井 孝至, 金川 清, 大泊 巌

    Patent

  • 微小開口膜、生体分子間相互作用解析方法及びその装置

    谷井 孝至, 島本 直伸, 大泊 巌, 上野 太郎, 船津 高志

    Patent

  • 繊維状カーボンの形態・位置制御方法、その方法を用いて位置制御された繊維状カーボン

    大泊 巌, 品田 賢宏, 谷井 孝至

    Patent

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Overseas Activities

  • ダイヤモンド窒素-空孔欠陥を用いた4量子ビット量子レジスタの作製

    2016.04
    -
    2016.07

    ドイツ   Ulm大学, MaxPlanck研究所

Sub-affiliation

  • Faculty of Science and Engineering   Graduate School of Fundamental Science and Engineering

  • Faculty of Science and Engineering   Graduate School of Advanced Science and Engineering

Research Institute

  • 2022
    -
    2024

    Waseda Research Institute for Science and Engineering   Concurrent Researcher

Internal Special Research Projects

  • 蛍光ナノダイヤモンドのバイオセンサー応用

    2023  

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    ダイヤモンド中の窒素-空孔欠陥(以下、NVセンター)は、優れた蛍光特性をもつ。レーザを照射し続けても蛍光退色せず、水溶液中でも安定に蛍光する。また、周囲の電場や磁場に感応して蛍光強度が変化するため、バイオセンサーとしての応用が期待できる。しかしながら、NVセンターは電子の数によって、NV+、NV0、NV-なる3つの荷電状態をとり、それぞれ異なる蛍光スペクトルを示すため、電場や磁場に感応して蛍光強度が変化したのか、それとも、荷電状態が変化して蛍光強度が変化したのかをリアルタイムに区別することが難しい。そこで、倒立型レーザ走査型共焦点顕微鏡の試料ステージに電気化学セルを構築し、これを表面にITO薄膜を有するガラスボトムディッシュかつAg/AgCl電極に対してITO表面電位を制御できるようなものとした。これにより、ITO表面に付着させたナノダイヤモンドを溶液とITOとで挿みこんで、電界を印加できるようにした。さらに、共焦点顕微鏡に分光器を新たに付加して、ITO表面電位を制御しながらナノダイヤモンド中のNVセンターの蛍光スペクトルを取得できるようにした。詳細なデータを現在取得・解析中であるが、得られた成果は下記の応用物理学会にて報告する。

  • ナノ構造配列中への希土類元素イオン注入によるシリコンフォトニクス

    2022  

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    シリコン中のエルビウムは内殻電子の遷移にともない、シリカ系光ファイバの最低伝送損失波長である1.5umの光子を放出する。酸素の共添加により温度消光を抑制でき、室温でも観測できるが、発光強度が低いことが課題となっている。本研究では、Silicon-on-insulator (SOI)基板のSOI層にナノピラーを形成し、その表面にエルビウムと酸素をイオン注入により添加して、エルビウムからの発光強度の増強を試みた。これにより、ナノピラーがない場合に比して発光強度を2倍にできることを実験的に示した。光学シミュレーションによる予測値に達する発光強度ではなかったが、主として、励起光の吸収強度による増強であることを示した。

  • ダイヤモンド表面での実神経細胞回路構築とNVセンタを用いた自発発火活動の長期計測

    2021  

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    ダイヤモンドは高い生体適合性を有するため、細胞計測への応用性が高い。ダイヤモンド中のNVセンターの電荷状態の違いを積極的に利用することで、神経細胞の膜電位を計測できる可能性がある。本研究では、NVセンター含有ナノダイヤモンドを塗布した導電性透明基板と溶液との電位差を電気化学的に制御しながらNVセンターからの蛍光を計測することで、蛍光ナノダイヤモンドが神経細胞の膜電位計測に資する性能を有するかを実験的に調査した。溶液中の蛍光ナノダイヤモンドを用いて、最小で振幅100mVの印加パルスに対応した蛍光強度変化を観測できたが、神経細胞の膜電位計測には、応答時間と感度のさらなる向上が必要である。

  • Er注入Siナノピラーを活用するSiフォトニクス

    2021  

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    これまでに、220 nm厚のSOI基板上のナノピラーにErとOを共添加すると、発光強度が最大で約20倍増大されることを見出している。一方、同ナノピラーからはEr由来でない近赤外発光の存在も確認されている。本研究では、Er由来でない近赤外発光の抑制およびErとOの共添加条件と発光強度の関係性の解明を研究目的とし、①Oイオン注入②Erイオン注入③ドライエッチングのいずれか、または、その複合によりSi結晶内部に欠陥が生じて、Er由来でない近赤外発光が生じると仮定した。コロナ感染症予防の観点から、ナノピラー中にErと酸素を共注入する実験装置の利用を研究期間に確保することができなかったため、これについては今後の継続課題とした。

  • 実神経細胞回路の接続と自発発火パターンの制御

    2020   服部晃平

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    マイクロパターニング技術を用いてガラス基板表面に細胞接着領域と非接着領域をパターニングし、個々の直径100umの円形パターン上でオータプスを有する孤立した単一神経細胞を成長させた。この単一神経細胞の自発発火パターンを計測した結果、長いバースト発火、周期的バースト発火、および、短いバースト発火に分類され、さらに、この3種の自発発火パターンがHodgkin–HuxleyモデルにおけるAMPAおよびNMDAコンダクタンス成分の寄与によって説明できること数理モデルを用いて明らかにした。

  • 不純物イオン注入による酸化チタンへの可視光応答性付与とその細胞パターニング応用

    2019  

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    酸化チタンへの可視光応答能(可視光照射による光触媒能)付与を目的として、集束イオンビームを用いて不純物イオンを酸化チタン表面に注入し、その光触媒能を実験的に評価した。スパッタ法を用いて、石英上のアナターゼ酸化チタンに、低エネルギーのAu、Er,、Fe、Siの4種イオンビームを注入し、その基板表面にオクタデシルシラン単分子膜を成膜して可視光(波長:420-440nm)を照射し、光触媒能によって単分子膜が分解した表面にのみ蛍光標識分子を吸着させることで、局所的な可視光応答能を評価できる方法を構築した。

  • シリコンフォトニクスのための単一Er注入Siデバイスの開発

    2018  

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    シングルイオン注入法を用いて少数のエルビウム原子をシリコンPNダイオードまたはMOSトランジスタのアクティブ領域に注入し、エルビウムからの発光を電気的に制御できるデバイスを試作・評価することが本研究の目的である。このために20nm程度まで薄膜化したSOIウェハにPNダイオードとnチャネルMOSトランジスタとを、学内のクリーンルーム共有設備を利用して試作するプロセスを開発した。これにより、両デバイスのアクティブ領域からの発光が上方より観察できる構造をもつデバイスが試作されたが、エレクトロルミネセンス計測では十分な光量の発光が観察されず、熱処理中のエルビウムの外方拡散により試作デバイスのアクティブ領域に十分なエルビウム原子が残らなかった可能性が示唆された。

  • イオン注入によるダイヤモンドのカラーセンタ形成プロセスの構築と単一光子源への応用

    2017  

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    量子通信用の単一光子源の実現を目指して、単結晶ダイヤモンド中に単一カラーセンタを形成するためのプロセス開発を行った。IIa結晶中にSiイオン注入によりSiVセンタを、また、窒素を多量に含むIb基板にNiを打ち込むことでNE8センタを作製できる条件を探索した。Ni打ち込みではNi由来のホトルミネッセンス(波長783nm)が計測されたが、NE8由来の発光ではなかった。一方、Si打ち込みでは単一SiVセンタの形成(波長738nm)を確認できた。20keVから18MeVまでのエネルギー範囲において打ち込みSi原子数 に対するSiV生成収率がエネルギーによらず一定であることを見出した。

  • シリコンフォトニクスのための単一Er注入Siデバイスの開発

    2016  

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    室温で光子を1個ずつ放出する新しいシリコンフォトニクス素子を開発し,その発光特性を活かして量子情報処理・通信に活用できるように,従来のシリコン電界効果トランジスタ(MOS FET)を高度化することが本研究の目的である.具体的には,たった1原子のエルビウムをチャネルに持つFETを作製し,電流注入によってこれらの単一原子からの発光を制御できるデバイスを開発する.チャネル中にエルビウムを注入したMOS FETの試作を行い、電気伝導特性を評価すると同時に、エルビウムと酸素の共注入と熱処理を施した際のEr:Oクラスター生成を3次元アトムプローブ測定によって同定した。

  • シリコンフォトニクスのための単一不純物原子シリコンデバイスの開発

    2015  

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    イオン注入を用いてSi FETのチャネル領域にErまたはGeといった、Siバンドギャップ中に深い準位を形成する不純物トを注入し、フォトルミネッセンスまたはFET電流によるインパクトイオン化によるエレクトロルミネッセンスを単一ドーパントレベル、すなわち単一フォトン検出を行った。Er注入においては、酸素原子との共注入によりEr:O比と発行強度の関係を評価した。60 keVでGeイオンを注入したFETではデバイスの耐圧の制限から、インパクトイオン化に至らず、発光は観察されなかった。一方、集束イオンビーム装置を用いてEr原子を20 keVで注入したデバイスでは、1.5 um領域からのフォトルミネッセンスの計測に成功した。

  • 量子情報通信のためのケイ素-空孔対ダイヤモンド単一光子源の作製

    2014  

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    集束イオンビーム装置を用いて単結晶ダイヤモンド薄膜にSi原子を打ち込み、Siと空孔からなる色中心であるSiV-センタを作製し、ドースと生成収率との関係を明らかにした。その結果、照準した位置に共焦点顕微鏡分解能以下の位置精度でSiV-センタの発光スポットを形成できること、1スポットあたり20個のSi原子を打ち込むと、生成収率15%でSiV-センタが生成されること、形成したスポットの中に単一のSiV-センタも存在すること、単一SiV-センタが単一光子源として機能すること、および、長時間の熱処理を施すとイオン注入で形成されたSiV-センタの輝度も十分に高いことを見出した。

  • ナノ加工を用いた局所神経回路の構築

    2013   山本英明

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     脳の機能素子である神経細胞は、シナプス結合によってネットワークを形成し、シグナルの伝達/処理を行う。脳は外部刺激を受けていない状態でも活動しているが、例えばその情報処理中枢である大脳皮質における自発的神経活動は、ランダムではなく、巨視的に視るとある特定の順番とタイミングをもっている。この自発活動は興奮性/抑制性神経細胞からなる再帰的ネットワークから生み出され、機能的には、例えば将来の入力への期待を表現するための内部モデルを脳内に造り出していると考えられている。したがって、脳機能の神経基盤を探求する上で、自発的神経活動の発生機序を明らかにすることは重要である。そこで我々は、半導体微細加工技術を用いて培養神経回路の素子数を外因的に制御し、その微小神経回路内の神経細胞の自発活動を観察することで、神経回路内で自発活動が起こるために必要な細胞数や、自発活動の発生における抑制性神経細胞の役割を調べた。 Poly (ethylene glycol) (PEG) silane(細胞接着阻害領域)、Poly-D-Lysine(PDL; 細胞接着可能領域)から成るPDL / PEGのパターン(200µm×200 µm; 500 µm×500 µm; 1000 µm×1000 µm)をガラス基板上に作製した。この基板上に胎生18日のラット胎児大脳皮質神経細胞を播種し、グリア細胞と共培養することにより、パターン内に神経回路を構築させた。培養開始から10-11日目において、構築した神経回路で起こる自発活動を、蛍光色素Fluo-4を用いたCa2+イメージングによって計測した。また、NeuN(神経細胞マーカー)とGABA(抑制性神経細胞マーカー)の共染色により、神経回路を構成する抑制性細胞の割合を評価した。 マイクロパターン基板上に培養神経細胞をパターニングし、Ca2+イメージングによって神経回路の自発活動を計測することに成功した。寸法の異なるパターン上の神経回路の活動を比較したところ、神経回路の大きさが増加するとともに自発的バースト活動の頻度が増加することが分かった。また、たかだか十数個の細胞からなる神経回路でも自発活動が発生することを確認することができた。これは、従来考えられていたよりもはるかに少ない数の素子数からなる神経回路であっても、cell assemblyとしての機能を持ちうることを示唆している。

  • がん細胞および神経細胞内応答解析のための表面ナノ加工基板の開発

    2013   山本英明

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     細胞培養液中で基板表面の細胞親和性を局所的に改質することにより,接着細胞の伸展面積や遊走方向,さらには神経細胞の突起伸長経路を制御することができる.私たちはこれまでに,酸化チタン(TiO2)の光触媒作用を活用して,TiO2表面の細胞接着阻害膜を培養液中において分解除去し,そこにコラーゲンなどの足場タンパク質を物理吸着させることで,基板表面の細胞親和性を局所的に改質でき,細胞の液中パターニングに応用できることを示してきた.しかしながら,初代神経細胞などの接着力の弱い細胞への応用を試みたところ,物理吸着した足場タンパク質の安定性が不十分で,神経細胞を接着させることができなかった.そこで, TiO2に高い親和性を示すタンパク質をリンカーとして用いることで,初代神経細胞の接着を支持するラミニンを被改質領域に安定に固定し,さらにその領域に初代神経細胞を選択的に接着させることを試みた. スライドガラス表面にTiO2膜をスパッタ法により成膜した.細胞接着阻害膜にはオクタデシルシラン単分子膜 (OTS SAM)を用い,表面を改質する直前に,基板を血清入り培地に一晩浸漬した.リンカータンパク質とラミニンが複合体を形成し,さらにこの複合体がTiO2上に吸着することは免疫沈降法により確認した.細胞はラット海馬神経細胞を用い,Neurobasal培地で培養した. リンカータンパク質を介してラミニンを結合させたTiO2基板表面上では,培養開始から2週間以上に渡ってラット海馬神経細胞が安定に成長した.また,OTS SAM/TiO2に対して蛍光顕微鏡の光学系で集光した紫外光を照射したところ,ラミニンは光改質した領域に選択的に吸着し,神経細胞を改質領域上にパターニングすることができた.未照射領域への非特異的な細胞接着はほとんど確認されなかった.リンカータンパク質を用いてラミニンが安定にパターニングできるようになったことは,TiO2の光触媒能を活用した液中表面改質技術が初代神経細胞にも応用できることを意味する.

  • Siイオン注入によるダイヤモンド基板中Si-V発光センターの作製と量子情報通信のための単一光子源への応用

    2013  

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     ダイヤモンド単結晶中のカラーセンタは古くからダイヤモンドの色を決定する欠陥として研究されてきた。本研究では、中でもケイ素と原子空孔からなるSi-Vセンタに着目し、これを量子情報通信のための単一光子源として応用するために、ダイヤモンド単結晶中にケイ素1原子とそれに隣接する2個の原子空孔を、研究者の独自技術であるシングルイオン注入法を用いて配列形成する手法を試みた。具体的には、ダイヤモンド表面にケイ素原子を1原子ずつ注入し、このイオン注入によって生成される原子空孔と注入されたケイ素原子とを熱処理によって結合させる。注入位置にSi-Vセンタが形成できたかどうかの確認は、共焦点顕微鏡を用いたホトルミネッセンスにより行い、負に帯電したSi-Vセンタからの波長738nmの発光を観測することによって行う。また、共焦点顕微鏡を用いて、アンチバンチング計測を行うことによって、ケイ素イオン注入位置に単一のSi-Vセンタ、すなわち単一光子源が生成されることを確認する。このために、イオン注入と熱処理条件を探索した。 1スポットあたり1000個のケイ素イオンを集束イオンビーム装置(60keV)を用いて注入し、10%水素フォーミングガス中で1000℃、1時間の熱処理を施した。この結果、共焦点顕微鏡の分解能に匹敵する500nm間隔で、Si-Vセンタを配列形成することに成功した。また、ホトルミネッセンスにおけるSi-Vセンタからの発光強度は1スポットあたりのケイ素イオン注入量に比例した。このことは、上記の熱処理条件において、注入したケイ素イオンおよびイオン注入によって導入された空孔欠陥は複合欠陥をとるよりも、Si-Vセンタとしての構造、すなわちdivacancy構造になりやすいことを示唆している。 一方、共焦点顕微鏡でのホトルミネッセンス観察前に熱混酸処理およびアンモニア過酸化水素水処理を施すと、表面のコンタミネーションが除去されて、ホトルミネッセンス計測において背景光が低減した。これにより、1スポットあたり20個という極めて少数の原子を注入した位置からの発光も捕捉することができた。しかも、配列中の0.5%程度のスポットで、この発光が単一のSi-Vセンタが生成されていることを実証した。 現時点では、0.5%程度と生成率は低迷しているが、本研究での成果は、①イオン注入と熱処理によってSi-Vセンタを形成できること、②イオン注入によるSi-Vセンタの生成率は一定でドースに比例すること、③熱混酸処理およびアンモニア過酸化水素水処理がダイヤモンド表面からの背景光除去に有効であること、④1スポットあたりに20個程度のケイ素イオンを注入すれば単一のSi-Vセンタ、すなわち単一光子源を形成できることを実験的に実証したことである。

  • 液中表面ナノ改質を用いた人工神経細胞回路の形成と神経回路数理モデルの実験的検証

    2012  

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    脳の高次機能の理解と脳型機能の創発は現代に残された大きな課題の1つである。しかしながら、未だ記憶や情動のメカニズムの理解には至っていない。この理由は、実神経細胞を用いて、脳中の局所神経回路を人工的に再構成できないことにあると考える。あたかも“基板上に電子回路を作製するがごとく”任意の神経回路を基板上に再現できれば、回路の諸定数とその動作を詳細に調べることができ、脳機能の解明を大きく前進させるはずである。この目的のために、我々は、酸化チタンの光触媒能を活用して、複数の神経細胞を要素とする任意の局所回路をガラス基板パターン上に再構成することを試みた。その結果、下記の進展および達成があった。1)昨年度に独自に発見した「神経細胞が接着した後、神経突起を伸長できる長さを非対称的に1本だけ長く伸長できるように、細胞接着阻害領域を予め作成しておくと、その長い1本が優先的に軸策となる」という現象に関して、他グループから報告されている「神経突起に加わる応力が軸索/樹状突起の分化を決定する」という現象と矛盾するかどうかを調査した。このために、突起伸長を誘導するパターン形状の長さだけでなく湾曲も加えることにした。パターン湾曲による曲率の変化により、神経突起に加わる応力を制御できる。結果は、パターン湾曲の有無に依存せず、最終的に最も長く伸長できた突起が優先的に軸索に分化することを確認した。2)マイクロパターン基板上に培養神経細胞をパターニングし、Ca2+イメージングによって神経回路の自発活動を計測することに成功した。寸法の異なるパターン上の神経回路の活動を比較したところ、神経回路の大きさが増加するとともに平均発火頻度が増加することが分かった。また、たかだか十数個の細胞からなる神経回路でも自発活動が発生することを確認することができた。これは、従来考えられていたよりもはるかに少ない数の素子数からなる神経回路においても、cell assemblyとしての機能を持ちうることを示唆している。上記の結果は、任意の神経回路をガラス基板上に再現するための要素技術が整ったことを意味する。

  • 液中表面ナノ改質を用いたフィードバック型神経回路の作製と解析法の構築

    2011  

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     脳の高次機能の理解と脳型機能の創発は現代に残された大きな課題の1つである。しかしながら、未だ記憶や情動のメカニズムの理解には至っていない。この理由は、実神経細胞を用いて、脳中の局所神経回路を人工的に再構成できないことにあると考える。あたかも“基板上に電子回路を作製するがごとく”任意の神経回路を基板上に再現できれば、回路の諸定数とその動作を詳細に調べることができ、脳機能の解明を大きく前進させるはずである。 この目的のために、我々は、酸化チタンの光触媒能を活用して、複数の神経細胞を要素とする任意の局所回路をガラス基板上に再構成することを試みた。その結果、下記の進展および達成があった。1)微粒子の酸化チタンをガラス基板表面にスピンコートして薄膜状にしたものと、スパッタ法によって酸化チタンを蒸着したものを作成し、その表面にオクタデシルシラン単分子膜を成長させる方法を構築した。2)上記1)の2つの方法で作成したオクタデシルシラン単分子膜のどちらも、神経細胞の接着を阻害することが分かった。ただし、スパッタ法で作成した酸化チタン膜の方が、細胞の非特異的な接着が少なかった。3)蛍光顕微鏡の水銀ランプまたは光リソグラフィ用のDeepUV光を局所的に照射したところ、酸化チタンの光触媒作用によって、照射部位の単分子膜が分解することが分かった。光触媒作用による分解は水中や細胞培養液中でも起きた。スピンコート法、スパッタ法のどちらでも、堆積後に充分なアニールを施すことによって光触媒作用が発現した。4)上記3)の結果は、水に対する接触角の低下、赤外吸収分光法によるC-H伸縮振動ピークの減少から確かめられた。5)細胞接着阻害膜を光触媒作用を用いて培養液中で分解すると、その部位にのみ細胞が接着し、細胞接着部位をパターニングできることが分かった。6)神経細胞が接着した後、神経突起を伸長できる長さを非対称的に1本だけ長く伸長できるように、細胞接着阻害領域を予め作成しておくと、その長い1本が優先的に軸策となることが分かった。上記の結果は、任意の神経回路をガラス基板上に再現するための要素技術が整ったことを意味する。

  • 有機シラン単分子膜成長ダイナミクスおよび微視的構造解明

    2007   三宅丈雄, 山本英明

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    【背景と目的】成長メカニズムにおける基礎的な学理構築の必要性と単分子膜としての応用性の高さから、魅力的なソフトマターである有機シラン自己組織化単分子膜(SAM)を研究対象とし、大規模計算機シミュレーションによる予測と実験的検証の両面から成長過程の動的素過程を解析し、膜構造と膜質に関する微視的描像を解明することを目的として研究を推進した。有機シランSAMにおける最重要課題は、高い応用性が示されているにもかかわらず、実験的に膜構造を決定する手法に乏しく、その結果、構造が未解明なまま放置されていることに加え、成膜時に外場が与える影響によって、成長様式や膜構造が異なり、実験室単位で質の異なる膜を対象として議論がなされていることである。【研究成果】シミュレーションによる成果: ・同種分子を用いて成膜した有機シランSAMであっても、下地酸化膜との化学結合(アンカリング)の数と、単分子膜同士の  架橋(クロスリンク)の数に違いがあり、これが異なる膜質の原因となっている。 ・アンカリングやクロスリンクの数が増加すると、膜は結晶性(六方細密充填構造)からアモルファス構造に変化する。実験による成果: ・液相で堆積したSAMと、気相で堆積したSAMの間には、成長過程とできあがる構造に大きな違いがある。 ・液相で成長するSAMはデンドライト成長し、気相で成長するSAMは一様成長する。 ・液相で成長するSAMは比較的結晶性を有するのに対し、気相で成長したSAMはアモルファスである。 ・膜の結晶性は、気相/液相といった堆積方法の差でなく、成膜温度に直接的に起因するようである。 ・有機シランSAMを電子線レジスト代替として用いる際の現像液であるHFに対し、結晶性を有するSAMより、アモルファスであるSAM  の方が耐性がある。このことは、CVDで成膜したアモルファスのSAMの方が電子線レジスト代替として優れていることを示す。 ・有機シランSAMの電子線照射に対する感度はSAMの末端基に大きく依存する。

  • シリコンナノ構造配列を用いた微小電子減の開発

    2002  

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    「シリコンナノ構造配列を用いた微小電子源の作製」 先鋭なシリコンナノ構造配列は、フラットパネルディスプレイやマルチ電子線リソグラフィ用の微小電子源として期待されている。その理由は、①材料としてシリコンを用いることにより、従来の微細加工を利用した高密度配列形成が可能なこと、②微小電子源と同一基板上に制御用の集積回路を組み込めること、③ナノスケールで先鋭な構造や低い仕事関数が、他の材料と比較して、電界放出に有利であること、などである。 我々は、独自に発見したアルカリ溶液中でのイオン照射減速エッチング現象を利用して、鋭い先端を有するシリコンのナノピラミッド配列を自己整合的に一括で作製する技術を開発し、微小電子源配列への応用を推進してきた。本研究の成果を以下にまとめる。 (1) TMAHを用いた3極管構造の作製TMAH中におけるイオン照射減速エッチング現象を用いて、シリコンナノテーブル配列を作製し、この形状を有効に利用して引出し電極を有するシリコン微小電子源を完成した。プロセスは、以下のステップから構成される。①イオン注入を用いて、Si(100)表面に配列状にイオン照射損傷を導入する。②損傷領域をマスクとして、TMAH中でシリコン減速エッチング現象を利用して、ナノテーブル配列を作製する。③熱酸化により、テーブルの先鋭化と引出し電極下の絶縁膜(熱酸化膜)を成長させる。④引出し電極として、ニオブを堆積する。⑤フッ酸を用いて、テーブル部分を選択的にリフトオフし、3極管構造を作製する。このプロセスは、マスク合わせを全く用いずに、自己整合的に引出し電極を有する3極管構造を作製でき、作製された微小電子源は現在最小のものである。引出し電極と、尖鋭な電子源を近接できることから、低閾値電圧での電子放出を期待できる。加えて、イオン注入がピラミッド先端の電気伝導型制御とナノテーブル構造作製の両方の役割を果たし、熱酸化がテーブルの先鋭化、ドーパントイオンの活性化および絶縁層堆積を兼ねるため、従来のプロセスよりプロセスステップ数を大幅に削減することが可能である。加えて、プロセス全体にわたって、ドライエッチングではなくウェットエッチングのみを採用していることから、ウェハスケールかつ低コストで製造できる点に特長がある。(2) TMAHを用いた3極管構造からのエミッション評価(1)で作製した3極管構造を超高真空チェンバ内にセッティングし、エミッション実験を行った。シリコンウェハ裏面にオーミック電極を作製してエミッタに通電し、ゲート電極にはワイヤーボンディングにより電圧を印加した。コレクタは透明導電性ガラス上に蒸着した蛍光板となっており、エミッションの有無を蛍光スポットとして観察できるようになっている。真空度は5E-7Pa以下で行われた。ゲート電圧に約30Vの電圧を印加したところ、コレクタ電流とともに、蛍光スポットが観察できた。I-V特性は良好な電界放出を示し、10時間以上の長時間にわたってエミッションを持続することができた。(1)(2)に示すように、本研究を通じて、従来のプロセスより有利なプロセスを開発し、現在報告されている中でも最も微細な微小電子源配列を完成し、低閾値電圧でのエミッションを確認した。

  • シリコンナノ構造配列を用いた微小電子の作成

    2001  

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    「シリコンナノ構造配列を用いた微小電子源の作製」 先鋭なシリコンナノ構造配列は、フラットパネルディスプレイやマルチ電子線リソグラフィ用の微小電子源として期待されている。その理由は、①材料としてシリコンを用いることにより、従来の微細加工を利用した高密度配列形成が可能なこと、②微小電子源と同一基板上に制御用の集積回路を組み込めること、③ナノスケールで先鋭な構造や低い仕事関数が、他の材料と比較して、電界放出に有利であること、などである。 我々は、独自に発見したアルカリ溶液中でのイオン照射減速エッチング現象を利用して、鋭い先端を有するシリコンのナノピラミッド配列を自己整合的に一括で作製する技術を開発し、微小電子源配列への応用を推進してきた。本研究の成果を以下にまとめる。 (1) シリコンナノピラミッド配列(2極管構造)からの電子放出特性評価異なる電気伝導型(p/n型)のSi(100)基板に様々なドーパントイオン(リン、ホウ素、アルゴン等)を照射し、照射損傷をマスクとして、ヒドラジン一水和物中で異方性エッチングを行い、ナノピラミッド配列を作製した。ピラミッドは熱酸化とその後の酸化膜剥離により先鋭化し、ピラミッド先端からの電子放出特性を超高真空中で評価した。基板の電気伝導型とピラミッド先端の電気伝導型は、走査型マクスウェル応力顕微鏡を用いた表面電位の測定により同定した。全ての電気伝導型とドーパントイオン照射の場合でも、良好な電界放出特性を示したが、特にp型基板にドナーイオンを注入して作製したナノピラミッドにおいて、高い時間安定性を得た。これは、ピラミッド先端に形成されるP/N接合界面の空乏層中における熱的なキャリア生成が、ピラミッド形状や先端の仕事関数の影響による素子ごとの特性のばらつきを自発的に制御するためであると考えられる。したがって、基板の電気伝導型やドーパントイオン種に依存せずに、自己整合的に一括で作製できる我々のプロセスは、従来のシリコン微小電子源作製プロセスと比較して、スループットの観点から優れていると結論できる。(2) 4メチル水酸化アンモニウム(TMAH)を用いたシリコンナノピラミッド配列の作製これまでは、シリコンの異方性エッチングにヒドラジン一水和物を用いていたが、この溶液は発がん性を有し、爆発性の観点からも危険性が高い。そこで、人体や環境への影響が少ない4メチル水酸化アンモニウム(TMAH)を用いて、シリコンのイオン照射減速エッチング現象を調査した。イオン照射したSi(100)基板を80度、2.38%のTMAH(NMD-3)を用いてエッチングしたところ、イオン照射減速エッチング現象を確認できた。すなわち、未照射領域のエッチレートに対し、照射領域のエッチレートが著しく低下し、エッチングマスクとして機能することが分かった。なお、照射するイオンとして、リン、ホウ素およびアルゴンのいずれにおいても、有効なイオン照射減速エッチング現象が確認できた。ただし、TMAHの有するエッチングレートの面方位依存性から、{100}に対する{111}面のエッチレート選択比がヒドラジン一水和物より低く、異方性エッチングすると構造にアンダーカットが生じることが分かった。TMAHの有するこれらの性質を利用すると、ナノスケールのテーブル構造を制御よく作製できる。(3) TMAHを用いた3極管構造の作製(2)の結果、TMAH中におけるイオン照射減速エッチング現象を用いて、シリコンナノテーブル配列を作製し、この形状を有効に利用して引出し電極を有するシリコン微小電子源を完成した。プロセスは、以下のステップから構成される。①イオン注入を用いて、Si(100)表面に配列状にイオン照射損傷を導入する。②損傷領域をマスクとして、TMAH中でシリコン減速エッチング現象を利用して、ナノテーブル配列を作製する。③熱酸化により、テーブルの先鋭化と引出し電極下の絶縁膜(熱酸化膜)を成長させる。④引出し電極として、ニオブを堆積する。⑤フッ酸を用いて、テーブル部分を選択的にリフトオフし、3極管構造を作製する。このプロセスは、マスク合わせを全く用いずに、自己整合的に引出し電極を有する3極管構造を作製でき、作製された微小電子源は現在最小のものである。引出し電極と、尖鋭な電子源を近接できることから、低閾値電圧での電子放出を期待できる。加えて、イオン注入がピラミッド先端の電気伝導型制御とナノテーブル構造作製の両方の役割を果たし、熱酸化がテーブルの先鋭化、ドーパントイオンの活性化および絶縁層堆積を兼ねるため、従来のプロセスよりプロセスステップ数を大幅に削減することが可能である。加えて、プロセス全体にわたって、ドライエッチングではなくウェットエッチングのみを採用していることから、ウェハスケールかつ低コストで製造できる点に特長がある。(1)から(3)に示すように、本研究を通じて、従来のプロセスより有利なプロセスを開発し、現在報告されている中でも最も微細な微小電子源配列を完成した。

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