Concurrent Post
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Faculty of Commerce School of Commerce
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Faculty of Science and Engineering Graduate School of Advanced Science and Engineering
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Affiliated organization Global Education Center
Details of a Researcher
Updated on 2022/05/26
Faculty of Commerce School of Commerce
Faculty of Science and Engineering Graduate School of Advanced Science and Engineering
Affiliated organization Global Education Center
理工学術院総合研究所 兼任研究員
Osaka University Doctor of Science
Osaka University Graduate School, Division of Engineering Science
Osaka University Faculty of Engineering Science
(BLANK)
大阪大学 博士(理学)
早稲田大学 研究院長
早稲田大学 理工学術院長
早稲田大学 先進理工学部長兼研究科長
北海道大学 非常勤講師
科学技術振興事業団 さきがけ研究員
北海道大学大学院工学研究科 非常勤講師
早稲田大学理工学部 教授
Waseda University School of Science and Engineering
静岡大学工学部 非常勤講師
東北大学電気通信研究所 非常勤講師
富士通研究所退職
フェムト秒テクノロジー研究機構研究員(つくば, 出向)
東北大学電気通信研究所 非常勤講師
大阪大学基礎工学部 非常勤講師
マックスプランク固体研究所 (独, stuttgart) 客員研究員
電子技術総合研究所に滞在
富士通研究所入社. 主に、冷水佐壽室長(後:阪大教授・基礎工学研究科長)−武藤俊一主任研(現:北大名誉教授)グループで半導体量子構造の超高速現象の評価に従事
物理学会
電子情報通信学会
応用物理学会
Applied physical properties
Semiconductor Physics
Prolonged spin relaxation time in Zn-doped GaAs/GaAsP strain-compensated superlattice
Shunsuke Ohki, Xiuguang Jin, Tomoki Ishikawa, Takuya Kamezaki, Kizuku Yamada, Shunichi Muto, Atsushi Tackeuchi
APPLIED PHYSICS LETTERS 111 ( 2 ) 022405 2017.07 [Refereed]
The striking influence of rapid thermal annealing on InGaAsP grown by MBE: material and photovoltaic device
Lian Ji, Ming Tan, Chao Ding, Kazuki Honda, Ryo Harasawa, Yuya Yasue, Yuanyuan Wu, Pan Dai, Atsushi Tackeuchi, Lifeng Bian, Shulong Lu, Hui Yang
JOURNAL OF CRYSTAL GROWTH 458 110 - 114 2017.01 [Refereed]
Analysis of quantum efficiency improvement in spin-polarized photocathode
Xiuguang Jin, Shunsuke Ohki, Tomoki Ishikawa, Atsushi Tackeuchi, Yosuke Honda
JOURNAL OF APPLIED PHYSICS 120 ( 16 ) 164501 2016.10 [Refereed]
Effect of thermal annealing on electron spin relaxation of beryllium-doped In0.8Ga0.2As0.45P0.55 bulk
Hao Wu, Lian Ji, Ryo Harasawa, Yuya Yasue, Takanori Aritake, Canyu Jiang, Shulong Lu, Atsushi Tackeuchi
AIP ADVANCES 6 ( 8 ) 085119 2016.08 [Refereed]
Picoseconds carrier spin relaxation in In0.8Ga0.2As/Al0.5Ga0.5As/AlAs0.56Sb0.44 coupled double quantum wells
Tomoki Ishikawa, Shin-ichiro Gozu, Teruo Mozume, Masaki Asakawa, Shunsuke Ohki, Atsushi Tackeuchi
2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS) 52 04CM05 2016 [Refereed]
Study of single crystal CuInSe2 thin films and CuGaSe2/CuInSe2 single quantum well grown by molecular beam epitaxy
Sathiabama Thiru, Masaki Asakawa, Kazuki Honda, Atsushi Kawaharazuka, Atsushi Tackeuchi, Toshiki Makimoto, Yoshiji Horikoshi
JOURNAL OF CRYSTAL GROWTH 425 203 - 206 2015.09 [Refereed]
Observation of picosecond electron spin relaxation in InGaAsP by time-resolved spin-dependent pump and probe reflection measurement
Ryo Harasawa, Naoki Yamamoto, Hao Wu, Takanori Aritake, Shulong Lu, Lian Ji, Atsushi Tackeuchi
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 252 ( 6 ) 1244 - 1247 2015.06 [Refereed]
Investigation of InGaAsP solar cells grown by solid-state molecular beam epitaxy
Lian Ji, Ming Tan, Kazuki Honda, Ryo Harasawa, Yuya Yasue, Yuanyuan Wu, Pan Dai, Atsushi Tackeuchi, Lifeng Bian, Shulong Lu, Hui Yang
SOLAR ENERGY MATERIALS AND SOLAR CELLS 137 68 - 72 2015.06 [Refereed]
Investigation of CuGaSe2/CuInSe2 double heterojunction interfaces grown by molecular beam epitaxy
Sathiabama Thiru, Masaki Asakawa, Kazuki Honda, Atsushi Kawaharazuka, Atsushi Tackeuchi, Toshiki Makimoto, Yoshiji Horikoshi
AIP ADVANCES 5 ( 2 ) 027120 2015.02 [Refereed]
Carrier recombination dynamics of MBE grown InGaAsP layers with 1 eV bandgap for quadruple-junction solar cells
Lian Ji, Shulong Lu, Yuanyuan Wu, Pai Dai, Lifeng Bian, Masayuki Arimochi, Tomomasa Watanabe, Naohiro Asaka, Mitsunori Uemura, Atsushi Tackeuchi, Shiro Uchida, Hui Yang
SOLAR ENERGY MATERIALS AND SOLAR CELLS 127 1 - 5 2014.08 [Refereed]
Observations of exciton and carrier spin relaxation in Be doped p-type GaAs
Naohiro Asaka, Ryo Harasawa, Shulong Lu, Pan Dai, Atsushi Tackeuchi
APPLIED PHYSICS LETTERS 104 ( 11 ) 112404 2014.03 [Refereed]
Picosecond spin relaxation in low-temperature-grown GaAs
M. Uemura, K. Honda, Y. Yasue, S. L. Lu, P. Dai, A. Tackeuchi
APPLIED PHYSICS LETTERS 104 ( 12 ) 122403 2014.03 [Refereed]
Time-resolved ultraviolet photoluminescence of ZnO/ZnGa2O4 composite layer
Qing Yang, Xiaohong Zhou, Takao Nukui, Yu Saeki, Sotaro Izumi, Atsushi Tackeuchi, Hirokazu Tatsuoka, Shuhua Liang
AIP ADVANCES 4 ( 2 ) 4864750 2014.02 [Refereed]
Observation of optical anisotropy of highly uniform InAs quantum dots
M. Uemura, J. Ohta, R. Yamaguchi, K. Yamaguchi, A. Tackeuchi
JOURNAL OF CRYSTAL GROWTH 378 463 - 465 2013.09 [Refereed]
Photoluminescence and Raman studies on Ge-based complexes in Si-doped GaInP epilayers grown on Germanium
W. He, S. L. Lu, D. S. Jiang, J. R. Dong, A. Tackeuchi, H. Yang
JOURNAL OF APPLIED PHYSICS 112 ( 2 ) 023509 2012.07 [Refereed]
Exciton and carrier spin relaxations in InGaAs lattice-matched to off-cut Ge substrates
Takenori Ushimi, Hiromi Nakata, Toshihiro Ishizuka, Kazutoshi Sasayama, Shulong Lu, Jianrong Dong, Atsushi Tackeuchi
APPLIED PHYSICS LETTERS 100 ( 25 ) 252414 2012.06 [Refereed]
Temperature Dependence of Spin Relaxation Time in InAs Columnar Quantum Dots at 10 to 150K
Sota Nakanishi, Kazutoshi Sasayama, Yoshitsugu Oyanagi, Ryo Yamaguchi, Shulong Lu, Lianhe Li, Andrea Fiore, Atsushi Tackeuchi
JAPANESE JOURNAL OF APPLIED PHYSICS 51 ( 4 ) 04DM05 2012.04 [Refereed]
Exciton spin relaxation in In0.53Ga0.47As/AlAs0.56Sb0.44 quantum wells
K. Sasayama, S. Nakanishi, R. Yamaguchi, Y. Oyanagi, T. Ushimi, S. Gozu, T. Mozume, A. Tackeuchi
APPLIED PHYSICS LETTERS 100 ( 9 ) 092401 2012.02 [Refereed]
Carrier spin relaxation in InGaAs/AlAsSb quantum wells
T. Nukui, S. Gozu, T. Mozume, S. Izumi, Y. Saeki, A. Tackeuchi
PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS 1399 659 - 660 2011 [Refereed]
Carrier spin relaxation in GaInNAsSb/GaNAsSb/GaAs quantum well
T. Asami, H. Nosho, L. H. Li, J. C. Harmand, S. L. Lu, A. Tackeuchi
PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS 1399 665 - 666 2011 [Refereed]
Novel ultraviolet photoluminescence of ZnO/ZnGa2O4 composite layers
Qing Yang, Yu Saeki, Sotaro Izumi, Takao Nukui, Atsushi Tackeuchi, Akihiro Ishida, Hirokazu Tatsuoka
APPLIED SURFACE SCIENCE 256 ( 22 ) 6928 - 6931 2010.09 [Refereed]
Observation of Spin Relaxation in InGaAs/AlAsSb Quantum Wells
Sotaro Izumi, Shin-Ichiro Gozu, Teruo Mozume, Yu Saeki, Takao Nukui, Atsushi Tackeuchi
JAPANESE JOURNAL OF APPLIED PHYSICS 49 ( 4 ) 04DM03 2010 [Refereed]
Picosecond Carrier Recombination of Single-Crystalline GaN Nanorods Grown on Si(111) Substrates
Atsushi Tackeuchi, Chan Ho Yoo, Tae Whan Kim, Young Hae Kwon, Tae Won Kang, Takao Nukui, Taisuke Fujita, Yoshiaki Nakazato, Yu Saeki, Sotaro Izumi
JAPANESE JOURNAL OF APPLIED PHYSICS 49 ( 7 ) 070201 2010 [Refereed]
Spin-Polarized Localized Exciton Photoluminescence Dynamics in GaInNAs Quantum Wells
Shulong Lu, Hidetaka Nosho, Atsushi Tackeuchi, Lifeng Bian, Jianrong Dong, Zhichuan Niu
JAPANESE JOURNAL OF APPLIED PHYSICS 48 ( 10 ) 100206 2009.10 [Refereed]
Time-resolved Studies of Carrier and Spin Dynamics in Quantum Dots and Wide Band-gap Materials
Atsushi Tackeuchi, Tae Whan Kim, Joo Hyung You, Hong Seok Lee, Hong Lee Park, Takako Chinone, Ji-Hao Liang
JOURNAL OF THE KOREAN PHYSICAL SOCIETY 55 ( 1 ) 107 - 111 2009.07 [Refereed]
Spin Relaxation in InAs Columnar Quantum Dots
Takehiko Umi, Hidetaka Nosho, Shulong Lu, Lianhe Li, Andrea Fiore, Atsushi Tackeuchi
JAPANESE JOURNAL OF APPLIED PHYSICS 48 ( 4 ) 04199 2009.04 [Refereed]
Localized and free exciton spin relaxation dynamics in GaInNAs/GaAs quantum well
S. L. Lu, L. F. Bian, M. Uesugi, H. Nosho, A. Tackeuchi, Z. C. Niu
APPLIED PHYSICS LETTERS 92 ( 5 ) 051908 2008.02 [Refereed]
Short exciton radiative lifetime in submonolayer InGaAs/GaAs quantum dots
Zhangcheng Xu, Yating Zhang, Atsushi Tackeuchi, Yoshiji Horikoshi, Jorn M. Hvam
APPLIED PHYSICS LETTERS 92 ( 6 ) 063103 2008.02
Carrier density dependence of nonresonant carrier tunneling in GaAs double quantum wells - effect of exciton and free carrier thermodynamic
S. L. Lu, T. Ushiyama, A. Tackeuchi, S. Muto
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 1 5 ( 1 ) 78 - + 2008 [Refereed]
Energy relaxation time of hot carriers photoexcited in InGaN
T. Ushiyama, T. Toizumi, Y. Nakazato, A. Tackeuchi
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 1 5 ( 1 ) 143 - 145 2008 [Refereed]
Competition between quantum-confined Stark effect and free-carrier screening effect in AlGaN/GaN multiple quantum wells
T. Fujita, T. Toizumi, Y. Nakazato, A. Tackeuchi, T. Chinone, J. H. Liang, M. Kajikawa
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 1 5 ( 1 ) 356 - + 2008
Carrier spin relaxation current topics in solid state physics in undoped GaAs double quantum wells
S. L. Lu, T. Ushiyama, A. Tackeuchi, S. Muto
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 1 5 ( 1 ) 326 - + 2008 [Refereed]
Generation of highly circularly polarized light from uniform InAs/GaAs quantum dots
K. Kusunoki, N. Tsukiji, T. Umi, A. Tackeuchi, K. Yamaguchi
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 1 5 ( 1 ) 378 - + 2008 [Refereed]
Transition from excitonic tunneling to free carrier tunneling in GaAs/AlGaAs double quantum wells
Shulong Lu, Takafumi Ushiyama, Taisuke Fujita, Koji Kusunoki, Atsushi Tackeuchi, Shunichi Muto
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 46 ( 6A ) 3305 - 3308 2007.06 [Refereed]
Picosecond spin relaxation of acceptor-bound exciton in wurtzite GaN
H. Otake, T. Kuroda, T. Fujita, T. Ushiyama, A. Tackeuchi, T. Chinone, J. -H. Liang, M. Kajikawa
APPLIED PHYSICS LETTERS 89 ( 18 ) 182110 2006.10 [Refereed]
Thermally activated carrier transfer among CdTe/ZnTe self-organized quantum dots
Atsushi Tackeuchi, Shogo Miyata, Seiji Sugawa, Koji Kusunoki, Tae Whan Kim, Jae-Ho Kim
APPLIED PHYSICS LETTERS 89 ( 11 ) 112125 2006.09 [Refereed]
Spin relaxation and antiferromagnetic coupling in semiconductor quantum dots
A Tackeuchi, T Kuroda, K Yamaguchi, Y Nakata, N Yokoyama, T Takagahara
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES 32 ( 1-2 ) 354 - 358 2006.05 [Refereed]
Nanosecond excitonic spin relaxation in cubic GaN
A Tackeuchi, H Otake, Y Ogawa, T Ushiyama, T Fujita, F Takano, H Akinaga
APPLIED PHYSICS LETTERS 88 ( 16 ) 162114 2006.04 [Refereed]
Picosecond spin relaxations of acceptor-bound exciton and A-band free exciton in wurtzite GaN
A. Tackeuchi, H. Otake, T. Fujita, T. Kuroda, T. Chinone, J. -H. Liang, M. Kajikawa
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 12 3 ( 12 ) 4303 - 4306 2006 [Refereed]
Size dependence of carrier recombination efficiency in GaN quantum dots
A Neogi, H Everitt, H Morkoc, T Kuroda, A Tackeuchi
IEEE TRANSACTIONS ON NANOTECHNOLOGY 4 ( 2 ) 297 - 299 2005.03 [Refereed]
Exciton localization in vertically and laterally coupled GaN/AlN quantum dots
A Neogi, H Morkoc, T Kuroda, A Tackeuchi, T Kawazoe, M Ohtsu
NANO LETTERS 5 ( 2 ) 213 - 217 2005.02 [Refereed]
Coupling of spontaneous emission from GaN-AlN quantum dots into silver surface plasmons
A Neogi, H Morkoc, T Kuroda, A Tackeuchi
OPTICS LETTERS 30 ( 1 ) 93 - 95 2005.01 [Refereed]
Subpicosecond exciton spin relaxation in GaN
T Kuroda, T Yabushita, T Kosuge, A Tackeuchi, K Taniguchi, T Chinone, N Horio
APPLIED PHYSICS LETTERS 85 ( 15 ) 3116 - 3118 2004.10 [Refereed]
Exciton spin relaxation dynamics in InGaAs/InP quantum wells
S Akasaka, S Miyata, T Kuroda, A Tackeuchi
APPLIED PHYSICS LETTERS 85 ( 11 ) 2083 - 2085 2004.09 [Refereed]
Spin relaxation dynamics in highly uniform InAs quantum dots
A Tackeuchi, R Ohtsubo, K Yamaguchi, M Murayama, T Kitamura, T Kuroda, T Takagahara
APPLIED PHYSICS LETTERS 84 ( 18 ) 3576 - 3578 2004.05 [Refereed]
Electron spin flip by antiferromagnetic coupling between semiconductor quantum dots
A Tackeuchi, T Kuroda, Y Nakata, M Murayama, T Kitamura, N Yokoyama
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 42 ( 7A ) 4278 - 4281 2003.07 [Refereed]
Enhanced radiative efficiency in GaN quantum dots grown by molecular beam epitaxy
A Neogi, H Everitt, H Morkoc, T Kuroda, A Tackeuchi
IEEE TRANSACTIONS ON NANOTECHNOLOGY 2 ( 1 ) 10 - 14 2003.03 [Refereed]
Direct observation of phonon relaxation bottleneck in InAs quantum dots of high-uniformity
T Kitamura, R Ohtsubo, M Murayama, T Kuroda, K Yamaguchi, A Tackeuchi
2ND INTERNATIONAL CONFERENCE ON SEMICONDUCTOR QUANTUM DOTS 0, No. 4 1165 - 1168 2003 [Refereed]
Observation of spin Pauli blocking in InAs high-uniform quantum dots
M Murayama, R Ohtsubo, T Kitamura, T Kuroda, K Yamaguchi, A Tackeuchi
2ND INTERNATIONAL CONFERENCE ON SEMICONDUCTOR QUANTUM DOTS 0, No. 4 1145 - 1148 2003 [Refereed]
Enhancement of spontaneous recombination rate in a quantum well by resonant surface plasmon coupling
A Neogi, CW Lee, HO Everitt, T Kuroda, A Tackeuchi, E Yablonovitch
PHYSICAL REVIEW B 66 ( 15 ) 153305 2002.10 [Refereed]
Influence of free carrier screening on the luminescence energy shift and carrier lifetime of InGaN quantum wells
T Kuroda, A Tackeuchi
JOURNAL OF APPLIED PHYSICS 92 ( 6 ) 3071 - 3074 2002.09 [Refereed]
緑色発光LEDの時間分解エレクトロルミネッセンス測定
黒田剛正, 藪下智仁, 竹内淳, 堀尾直史, 谷口和与至, 山下陽滋, 千野根崇子, 船岡千洋
信学技報 ED2002-77, LQE2002-52 17 - 20 2002.06
Localized exciton dynamics in InGaN quantum well structures
SF Chichibu, T Azuhata, H Okumura, A Tackeuchi, T Sota, T Mukai
APPLIED SURFACE SCIENCE 190 ( 1-4 ) 330 - 338 2002.05 [Refereed]
Antiferromagnetic coupling between semiconductor quantum dots
A Tackeuchi, T Kuroda, R Sasou, Y Nakata, N Yokoyama
PHYSICA B-CONDENSED MATTER 314 ( 1-4 ) 25 - 29 2002.03 [Refereed]
半導体量子ドット間の反強磁性結合による電子スピンの反転
竹内 淳, 黒田剛正, 中田義昭, 横山直樹
日本物理学会誌 第57巻 ( 12号 ) 904 2002
Time-resolved electroluminescence study of green light-emitting diode
T Kuroda, N Horio, K Taniguchi, H Sato, C Funaoka, A Tackeuchi
INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS 0, 25 25 - 28 2002 [Refereed]
Localized exciton dynamics in strained cubic In0.1Ga0.9N/GaN multiple quantum wells
SF Chichibu, M Sugiyama, T Onuma, T Kitamura, H Nakanishi, T Kuroda, A Tackeuchi, T Sota, Y Ishida, H Okumura
APPLIED PHYSICS LETTERS 79 ( 26 ) 4319 - 4321 2001.12 [Refereed]
Time-resolved photoluminescence study of InGaN MQW with a p-contact layer
T Kuroda, R Sasou, A Tackeuchi, H Sato, N Horio, C Funaoka
PHYSICA STATUS SOLIDI B-BASIC RESEARCH 228 ( 1 ) 125 - 128 2001.11 [Refereed]
Band gap bowing and exciton localization in strained cubic InxGa1-xN films grown on 3C-SiC (001) by rf molecular-beam epitaxy
SF Chichibu, M Sugiyama, T Kuroda, A Tackeuchi, T Kitamura, H Nakanishi, T Sota, SP DenBaars, S Nakamura, Y Ishida, H Okumura
APPLIED PHYSICS LETTERS 79 ( 22 ) 3600 - 3602 2001.11 [Refereed]
Ultrafast all-optical modulation by near-infrared intersubband transition in n-doped InGaAs/AlAsSb quantum wells
A Neogi, H Yoshida, T Mozume, N Georgiev, T Akiyama, A Tackeuchi, O Wada
OPTICAL AND QUANTUM ELECTRONICS 33 ( 7-10 ) 975 - 983 2001.07 [Refereed]
Observation of interdot tunneling process of spin-polarized electrons
A Tackeuchi, Y Nakata, R Sasou, K Mase, T Kuroda, N Yokoyama
PHYSICA E 10 ( 1-3 ) 32 - 35 2001.05 [Refereed]
半導体量子構造のスピン物性と電子スピンを用いた量子演算の可能性
武藤俊一, 竹内 淳
応用物理 70巻 291 - 295 2001
Dynamics of carrier tunneling between vertically aligned double quantum dots
A Tackeuchi, T Kuroda, K Mase, Y Nakata, N Yokoyama
PHYSICAL REVIEW B 62 ( 3 ) 1568 - 1571 2000.07 [Refereed]
No spin polarization of carriers in InGaN
A Tackeuchi, T Kuroda, A Shikanai, T Sota, A Kuramata, K Domen
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES 7 ( 3-4 ) 1011 - 1014 2000.05 [Refereed]
A pump and probe study of photoinduced internal field screening dynamics in an AlGaN/GaN single-quantum-well structure
A Shikanai, T Deguchi, T Sota, T Kuroda, A Tackeuchi, S Chichibu, S Nakamura
APPLIED PHYSICS LETTERS 76 ( 4 ) 454 - 456 2000.01 [Refereed]
No Spin Polarization of Carriers in InGaN
A. Tackeuchi, T. Kuroda, A. Shikanai, T. Sota, A. Kuramata, K. Domen
Physica E 7 1011 2000
Luminescence Energy Shift and Carrier Lifetime Change Dependence on Carrier Density in InGaN/InGaN Quantum Wells
T. Kuroda, A. Tackeuchi, T. Sota
Applied Physics Letters 76/25 3753 2000
Picosecond electron-spin relaxation in GaAs/AlGaAs quantum wells and InGaAs/InP quantum wells
A Tackeuchi, T Kuroda, S Muto, O Wada
PHYSICA B-CONDENSED MATTER 272 ( 1-4 ) 318 - 323 1999.12 [Refereed]
Electron spin relaxation in GaAs/AlGaAs quantum wires analyzed by transient photoluminescence
T Nishimura, XL Wang, M Ogura, A Tackeuchi, O Wada
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS 38 ( 8B ) L941 - L944 1999.08 [Refereed]
Electron spin-relaxation dynamics in GaAs/AlGaAs quantum wells and InGaAs/InP quantum wells
A Tackeuchi, T Kuroda, S Muto, Y Nishikawa, O Wada
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 38 ( 8 ) 4680 - 4687 1999.08 [Refereed]
Carrier mobility dependence of electron spin relaxation in GaAs quantum wells
R Terauchi, Y Ohno, T Adachi, A Sato, F Matsukura, A Tackeuchi, H Ohno
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 38 ( 4B ) 2549 - 2551 1999.04 [Refereed]
Carrier dynamics of quantum confined structures
S Muto, A Tackeuchi
MATERIALS SCIENCE & ENGINEERING R-REPORTS 22 ( 3 ) 79 - 111 1998.04 [Refereed]
Electron spin relaxation dynamics in InGaAs/InP multiple-quantum wells
A Tackeuchi, O Wada
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 37 ( 1 ) 98 - 99 1998.01 [Refereed]
Femtosecond saturable absorption recovery in a type-II tunneling bi-quantum well for long-wavelength operation
Y Matsui, K Ogawa, A Tackeuchi, Y Ogawa, A Suzuki
PHYSICA STATUS SOLIDI B-BASIC RESEARCH 204 ( 1 ) 416 - 419 1997.11 [Refereed]
半導体量子井戸におけるスピン緩和のダイナミクス
竹内淳, 和田修
応用物理 960 1997.09
Exciton spin dynamics in GaAs quantum wells
S Adachi, T Miyashita, S Takeyama, Y Takagi, A Tackeuchi
JOURNAL OF LUMINESCENCE 72-4 307 - 308 1997.06 [Refereed]
Electron spin relaxation in InGaAs/InP multiple-quantum wells
A Tackeuchi, O Wada, Y Nishikawa
APPLIED PHYSICS LETTERS 70 ( 9 ) 1131 - 1133 1997.03 [Refereed]
Polarization choices in exciton-biexciton system of GaAs quantum wells
S Adachi, T Miyashita, S Takeyama, Y Takagi, A Tackeuchi, M Nakayama
PHYSICAL REVIEW B 55 ( 3 ) 1654 - 1660 1997.01 [Refereed]
Ultrafast all-optical spin polarization switch using quantum-well etalon
Y Nishikawa, A Tackeuchi, M Yamaguchi, S Muto, O Wada
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS 2 ( 3 ) 661 - 667 1996.09 [Refereed]
Room-temperature electron spin dynamics in GaAs/AlGaAs quantum wells
A Tackeuchi, Y Nishikawa, O Wada
APPLIED PHYSICS LETTERS 68 ( 6 ) 797 - 799 1996.02 [Refereed]
Ultrafast optical sampling pump-probe measurement of exciton spin relaxation in GaAs/AlGaAs quantum wells
S Adachi, S Takeyama, Y Takagi, A Tackeuchi, S Muto
APPLIED PHYSICS LETTERS 68 ( 7 ) 964 - 966 1996.02 [Refereed]
Picosecond all-optical switching using tunneling and spin-relaxation in quantum well structures
A Tackeuchi, Y Nishikawa, S Muto, O Wada
OPTOELECTRONICS-DEVICES AND TECHNOLOGIES 10 ( 4 ) 561 - 574 1995.12 [Refereed]
TIME-RESOLVED STUDY OF CARRIER TRANSFER AMONG INAS/GAAS MULTI-COUPLED QUANTUM DOTS
A TACKEUCHI, Y NAKATA, S MUTO, Y SUGIYAMA, T USUKI, Y NISHIKAWA, N YOKOYAMA, O WADA
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 34 ( 11A ) L1439 - L1441 1995.11 [Refereed]
PERFORMANCE OF ALL-OPTICAL SWITCH UTILIZING THE SPIN-DEPENDENT TRANSIENT ROTATION IN A MULTIPLE-QUANTUM-WELL ETALON
Y NISHIKAWA, A TACKEUCHI, M YAMAGUCHI, S MUTO, O WADA
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 34 ( 10A ) L1283 - L1285 1995.10 [Refereed]
LARGE LATERAL MODULATION IN INAS/GAAS INPLANE STRAINED SUPERLATTICE ON SLIGHTLY MISORIENTED (110)INP SUBSTRATE
Y NISHIKAWA, Y NAKATA, A TACKEUCHI, S MUTO, O WADA
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS 34 ( 7B ) L915 - L917 1995.07 [Refereed]
BAND-GAP RENORMALIZATION AND EXCITONIC EFFECTS IN TUNNELING IN ASYMMETRIC DOUBLE-QUANTUM WELLS
A TACKEUCHI, AP HEBERLE, WW RUHLE, K KOHLER, S MUTO
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS 34 ( 5A ) L543 - L546 1995.05 [Refereed]
INGAAS/INALAS INPLANE SUPERLATTICES GROWN ON SLIGHTLY MISORIENTED (110) INP SUBSTRATES BY MOLECULAR-BEAM EPITAXY
Y NAKATA, O UEDA, A TACKEUCHI, S NAKAMURA, S MUTO
JOURNAL OF CRYSTAL GROWTH 150 ( 1-4 ) 341 - 345 1995.05 [Refereed]
NEAR-1.3-MU-M HIGH-INTENSITY PHOTOLUMINESCENCE AT ROOM-TEMPERATURE BY INAS/GAAS MULTI-COUPLED QUANTUM DOTS
A TACKEUCHI, Y NAKATA, S MUTO, Y SUGIYAMA, T INATA, N YOKOYAMA
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 34 ( 4A ) L405 - L407 1995.04 [Refereed]
ALL-OPTICAL PICOSECOND SWITCHING OF A QUANTUM-WELL ETALON USING SPIN-POLARIZATION RELAXATION
Y NISHIKAWA, A TACKEUCHI, S NAKAMURA, S MUTO, N YOKOYAMA
APPLIED PHYSICS LETTERS 66 ( 7 ) 839 - 841 1995.02 [Refereed]
DEPENDENCE OF RESONANT ELECTRON AND HOLE TUNNELING TIMES BETWEEN QUANTUM-WELLS ON BARRIER THICKNESS
AP HEBERLE, XQ ZHOU, A TACKEUCHI, WW RUHLE, K KOHLER
SEMICONDUCTOR SCIENCE AND TECHNOLOGY 9 ( 5 ) 519 - 522 1994.05 [Refereed]
GAMMA-X ELECTRON-TRANSFER IN TYPE-II TUNNELING BI-QUANTUM WELLS
A TAKEUCHI, U STRAUSS, WW RUHLE, T INATA
SOLID-STATE ELECTRONICS 37 ( 4-6 ) 809 - 812 1994.04 [Refereed]
STUDY OF TUNNELING TIME IN TUNNELING BI-QUANTUM-WELL AND RESONANT-TUNNELING BARRIER STRUCTURES
Y SUGIYAMA, T INATA, A TACKEUCHI, Y NAKATA, S NAKAMURA, S MUTO
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS 7 ( 3 ) 85 - 88 1994.02 [Refereed]
PICOSECOND OPTICAL SIGNAL RECOVERY IN TUNNELING BI-QUANTUM WELL STRUCTURE
A TACKEUCHI, S MUTO, Y NISHIKAWA
FUJITSU SCIENTIFIC & TECHNICAL JOURNAL 30 ( 2 ) 188 - 194 1994 [Refereed]
ULTRAFAST EXCITON SPIN RELAXATION IN GAAS/ALGAAS AND CDMNTE MULTIPLE-QUANTUM WELLS
Y TAKAGI, S ADACHI, S TAKEYAMA, A TACKEUCHI, S MUTO, JJ DUBOWSKI
JOURNAL OF LUMINESCENCE 58 ( 1-6 ) 202 - 205 1994.01 [Refereed]
EFFECT OF REACTIVE ION-BEAM ETCHING DAMAGE ON EXCITON ABSORPTION RECOVERY-TIME OF MULTIPLE QUANTUM-WELL WIRES
A ENDOH, H ARIMOTO, H KITADA, A TACKEUCHI, S MUTO
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 11 ( 2 ) 183 - 186 1993.03 [Refereed]
DIFFERENCES IN TUNNELING TIME BETWEEN 77-K AND ROOM-TEMPERATURE FOR TUNNELING BIQUANTUM WELLS
A TACKEUCHI, Y SUGIYAMA, T INATA, S MUTO
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 31 ( 12A ) 3823 - 3824 1992.12 [Refereed]
PICOSECOND SIGNAL RECOVERY IN TYPE-II TUNNELING BI-QUANTUM-WELL ETALON
A TACKEUCHI, T INATA, Y NAKATA, S NAKAMURA, Y SUGIYAMA, S MUTO
APPLIED PHYSICS LETTERS 61 ( 16 ) 1892 - 1894 1992.10 [Refereed]
FABRICATION OF SUB-100-NM WIRES AND DOTS IN GAAS/ALGAAS MULTIQUANTUM WELL USING FOCUSED ION-BEAM LITHOGRAPHY
H KITADA, H ARIMOTO, A TACKEUCHI, Y YAMAGUCHI, Y NAKATA, A ENDOH, S MUTO
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS 31 ( 7B ) L990 - L991 1992.07 [Refereed]
FAST RECOVERY FROM EXCITONIC ABSORPTION BLEACHING IN TYPE-II GAAS/ALGAAS/ALAS TUNNELING BIQUANTUM WELL
A TACKEUCHI, T INATA, Y SUGIYAMA, Y NAKATA, S NAKAMURA, S MUTO
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS 31 ( 6A ) L669 - L672 1992.06 [Refereed]
PICOSECOND ABSORPTION RECOVERY OF 100 NM GAAS/ALGAAS MQW WIRES
A TACKEUCHI, H KITADA, H ARIMOTO, Y SUGIYAMA, T INATA, Y YAMAGUCHI, Y NAKATA, S NAKAMURA, S MUTO
SURFACE SCIENCE 267 ( 1-3 ) 267 - 269 1992.04 [Refereed]
TEMPERATURE-DEPENDENCE OF PHOTOLUMINESCENCE DECAY TIME IN TUNNELING BI-QUANTUM-WELL STRUCTURES
Y SUGIYAMA, A TACKEUCHI, T INATA, S MUTO
INSTITUTE OF PHYSICS CONFERENCE SERIES 30 ( 120 ) 235 - 238 1992 [Refereed]
Fast recovery of excitonic absorption bleaching in tunneling Bi‐quantum well
Atsushi Tackeuchi, Tsuguo Inata, Shunichi Muto, Yoshihiro Sugiyama, Toshio Fujii
Electronics and Communications in Japan (Part II: Electronics) 75 ( 5 ) 25 - 33 1992
TIME EVOLUTION OF EXCITONIC ABSORPTION BLEACHING OF RESONANT TUNNELING BI-QUANTUM-WELL STRUCTURES
A TACKEUCHI, S MUTO, T INATA, T FUJII
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 30 ( 11A ) 2730 - 2733 1991.11 [Refereed]
PICOSECOND EXCITONIC ABSORPTION RECOVERY OF 100 NM GAAS/ALGAAS NARROW MULTIPLE QUANTUM-WELL WIRES
A TACKEUCHI, H KITADA, H ARIMOTO, Y SUGIYAMA, A ENDOH, Y NAKATA, T INATA, S MUTO
APPLIED PHYSICS LETTERS 59 ( 9 ) 1114 - 1116 1991.08 [Refereed]
LONGITUDINAL-OPTICAL-PHONON ASSISTED TUNNELING IN TUNNELING BI-QUANTUM WELL STRUCTURES
S MUTO, T INATA, A TACKEUCHI, Y SUGIYAMA, T FUJII
APPLIED PHYSICS LETTERS 58 ( 21 ) 2393 - 2395 1991.05 [Refereed]
FAST RECOVERY OF EXCITONIC ABSORPTION BLEACHING IN TUNNELING BIQUANTUM WELL STRUCTURES
A TACKEUCHI, S MUTO, T INATA, T FUJII
APPLIED PHYSICS LETTERS 58 ( 15 ) 1670 - 1672 1991.04 [Refereed]
TBQにおける励起子吸収の超高速回復
竹内淳, 稲田嗣夫, 武藤俊一, 杉山芳弘, 藤井俊夫
電子情報通信学会論文誌 C-I, J74-C-I ( 11 ) 458 - 464 1991
DIRECT OBSERVATION OF PICOSECOND SPIN RELAXATION OF EXCITONS IN GAAS/ALGAAS QUANTUM-WELLS USING SPIN-DEPENDENT OPTICAL NONLINEARITY
A TACKEUCHI, S MUTO, T INATA, T FUJII
APPLIED PHYSICS LETTERS 56 ( 22 ) 2213 - 2215 1990.05 [Refereed]
PICOSECOND CHARACTERIZATION OF INGAAS INALAS RESONANT TUNNELING BARRIERS GROWN BY MBE
S MUTO, A TACKEUCHI, T INATA, E MIYAUCHI, T FUJII
SURFACE SCIENCE 228 ( 1-3 ) 370 - 372 1990.04 [Refereed]
FAST RECOVERY OF EXCITONIC ABSORPTION PEAKS IN TUNNELING BI-QUANTUM-WELL STRUCTURES
A TACKEUCHI, S MUTO, T INATA, T FUJII
ULTRAFAST PHENOMENA VII 53 265 - 267 1990 [Refereed]
PICOSECOND CHARACTERIZATION OF INGAAS/INALAS RESONANT TUNNELING BARRIER DIODE BY ELECTRO-OPTIC SAMPLING
A TACKEUCHI, T INATA, S MUTO, E MIYAUCHI
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS 28 ( 5 ) L750 - L753 1989.05 [Refereed]
VERY HIGH-SPEED GAINAS METAL-SEMICONDUCTOR-METAL PHOTODIODE INCORPORATING AN ALLNAS/GALNAS GRADED SUPERLATTICE
O WADA, H NOBUHARA, H HAMAGUCHI, T MIKAWA, A TACKEUCHI, T FUJII
APPLIED PHYSICS LETTERS 54 ( 1 ) 16 - 17 1989.01 [Refereed]
トンネル双量子井戸とMQW微細線の超高速応答
竹内淳, 稲田嗣夫, 有本宏, 北田秀樹, 杉山芳弘, 中田義昭, 仲村智, 遠藤聡, 山口正臣, 武藤俊一
電気学会 電子材料研究会資料 EFM-92-11
JSAP Fellow
2017.09 The Japan Society of Applied Physics
JSAP Paper Award
2004.09
IEICE Excellent Paper Award
1993
IEEJ Excellent Paper Presentation Award
1993
半導体量子構造による円偏光の高偏極長スピン寿命電子への変換
Project Year :
Highly spin polarized quantum dots with long spin relaxation time for future circularly polarized light emitting diodes
Project Year :
新機能性物質における自己組織化ナノ領域の計測と制御
文部科学省
Project Year :
高機能性新半導体デバイス開発
文部科学省
Project Year :
過渡的磁性半導体の機能の研究
過渡的磁性半導体の機能の研究
過渡的磁性半導体の機能の研究
超高速スピン応答光デバイス
Research on the coherent control of electron spins in quantum dots
Optical Control And Application Of Spin Generation And Relaxation
光スピントロニクスデバイス研究調整班
超高速スピン応答光デバイス
Optical spin manipulation of coupled quantum dots
Seminar on Semiconductor Devices D
Graduate School of Advanced Science and Engineering
2022 fall semester
Seminar on Semiconductor Devices C
Graduate School of Advanced Science and Engineering
2022 spring semester
Graduate School of Advanced Science and Engineering
2022 fall semester
Research on Semiconductor Devices
Graduate School of Advanced Science and Engineering
2022 full year
Master's Thesis (Department of Nanoscience and Nanoengineering)
Graduate School of Advanced Science and Engineering
2022 full year
Master's Thesis (Department of Pure and Applied Physics)
Graduate School of Advanced Science and Engineering
2022 full year
Master's Thesis (Department of Pure and Applied Physics)
Graduate School of Advanced Science and Engineering
2022 full year
Seminar on Semiconductor Quantum Physics D
Graduate School of Advanced Science and Engineering
2022 fall semester
Seminar on Semiconductor Quantum Physics C
Graduate School of Advanced Science and Engineering
2022 spring semester
Graduate School of Advanced Science and Engineering
2022 fall semester
Research on Semiconductor Quantum Physics
Graduate School of Advanced Science and Engineering
2022 full year
Experiments in Nanoscience and Nanoengineering
Graduate School of Advanced Science and Engineering
2022 full year
Seminar on Semiconductor Devices D
Graduate School of Advanced Science and Engineering
2022 fall semester
Seminar on Semiconductor Devices C
Graduate School of Advanced Science and Engineering
2022 spring semester
Graduate School of Advanced Science and Engineering
2022 fall semester
Research on Semiconductor Devices
Graduate School of Advanced Science and Engineering
2022 full year
Master's Thesis (Department of Nanoscience and Nanoengineering)
Graduate School of Advanced Science and Engineering
2022 full year
Study Abroad in Physics and Applied Physics D
Graduate School of Advanced Science and Engineering
2022 full year
Study Abroad in Physics and Applied Physics C
Graduate School of Advanced Science and Engineering
2022 full year
Study Abroad in Physics and Applied Physics B
Graduate School of Advanced Science and Engineering
2022 full year
Study Abroad in Physics and Applied Physics A
Graduate School of Advanced Science and Engineering
2022 full year
Research on Semiconductor Devices
Graduate School of Advanced Science and Engineering
2022 full year
Experiments in Nanoscience and Nanoengineering
Graduate School of Advanced Science and Engineering
2022 full year
Research on Semiconductor Quantum Physics
Graduate School of Advanced Science and Engineering
2022 full year
Seminar on Semiconductor Quantum Physics D
Graduate School of Advanced Science and Engineering
2022 fall semester
Seminar on Semiconductor Quantum Physics C
Graduate School of Advanced Science and Engineering
2022 spring semester
Research on Semiconductor Quantum Physics
Graduate School of Advanced Science and Engineering
2022 full year
Basic Experiments in Science and Engineering 2B Butsuri
School of Advanced Science and Engineering
2022 fall semester
Basic Experiments in Science and Engineering 2B Oubutsu
School of Advanced Science and Engineering
2022 fall semester
Research and Exercises in Applied Physics [S Grade]
School of Advanced Science and Engineering
2022 full year
Graduation Thesis B (Applied Physics) [S Grade]
School of Advanced Science and Engineering
2022 spring semester
Graduation Thesis B (Applied Physics)
School of Advanced Science and Engineering
2022 spring semester
Graduation Thesis B (Physics) [S Grade]
School of Advanced Science and Engineering
2022 spring semester
Graduation Thesis A (Applied Physics) [S Grade]
School of Advanced Science and Engineering
2022 fall semester
Graduation Thesis A (Physics) [S Grade]
School of Advanced Science and Engineering
2022 fall semester