Updated on 2026/05/22

写真a

 
TSUCHIYA, Takashi
 
Affiliation
Faculty of Science and Engineering, Graduate School of Advanced Science and Engineering
Job title
Professor(non-tenure-track)
Homepage URL
https://samurai.nims.go.jp/profiles/TSUCHIYA_Takashi

Research Experience

  • 2026.04
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    Now

    早稲田大学 理工学術院   教授 (任期付)

  • 2024.04
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    Now

    National Institute for Materials Science

  • 2023.10
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    Now

    科学技術振興機構 さきがけ「ナノマテリアル・デバイス」領域   研究者

  • 2025.04
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    2026.03

    早稲田大学 理工学術院   客員教授

  • 2023.04
    -
    2024.03

    National Institute for Materials Science

  • 2020.04
    -
    2023.03

    National Institute for Materials Science

  • 2016.04
    -
    2020.03

    National Institute for Materials Science

  • 2015.04
    -
    2016.03

    Tokyo University of Science   Faculty of Science, Division 1 Applied Physics

  • 2012.04
    -
    2015.03

    National Institute for Materials Science

  • 2009.04
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    2012.03

    The University of Tokyo

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Committee Memberships

  • 2026.04
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    Now

    応用物理学会薄膜・表面物理分科会  常任幹事

  • 2025.02
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    Now

    応用物理学会  代議員

  • 2023.01
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    Now

    応用物理学会  トータルバイオミメティクス研究会 会計幹事

  • 2022.04
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    Now

    応用物理学会  固体素子・材料コンファレンス (SSDM) 論文委員

  • 2018.04
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    Now

    応用物理学会  マイクロプロセス・ナノテクノロジー国際会議 (MNC) 論文委員

  • 2022.06
    -
    2022.12

    応用物理学会  トータルバイオミメティクス研究グループ 幹事

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Professional Memberships

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    THE JAPAN SOCIETY OF APPLIED PHYSICS

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    THE ELECTROCHEMICAL SOCIETY OF JAPAN

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    固体イオニクス学会

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    日本MRS

Research Areas

  • Electron device and electronic equipment / Thin film/surface and interfacial physical properties / Inorganic materials and properties

Research Interests

  • 原子スイッチ

  • 固体イオニクス

  • イオントロニクス

  • ニューロモルフィックデバイス

  • スピントロニクス

  • 電気化学

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Awards

  • 応用物理学会第9回薄膜・表面物理分科会論文賞

    2025.03   応用物理学会薄膜・表面物理分科会  

    Winner： 西岡大貴, 土屋敬志, 並木航, 井村将隆, 小出康夫, 樋口透, 寺部一弥

  • The 23rd International Conference on Solid State Ionics (SSI-23) Best Poster Award

    2022.07   Physical Reservoir Computing Based on Solid-State Electric Double Layer Effect

  • Applied Physics Express: 2021 Outstanding Reviewer Awards

    2022.04   The Japanese Society of Applied Physics  

    Winner： Takashi Tsuchiya

  • 2021 Editors' Highlights

    2021.12   The electric double layer effect and its strong suppression at Li+ solid electrolyte/hydrogenated diamond interfaces

  • The 22nd International Conference on Solid State Ionics (SSI-22) Best poster award

    2019.06  

    Winner： T. Tsuchiya, M. Takayanagi, M. Imura, Y. Koide, T. Higuchi, K. Terabe

  • 田川記念固体化学奨励賞

    2016.03   公益社団法人 電気化学会  

    Winner： 土屋 敬志

  • 電気化学会第89回大会優秀学生講演賞

    2022.04   種々のリチウム系固体電解質/電極界面における酸素授受挙動のin-situ観察

  • 「蓄電固体界面科学」第3回若手勉強会優秀発表賞

    2022.01   種々のリチウム系固体電解質/電極界面における酸素授受挙動のその場観察

    Winner： 高栁真, 土屋敬志, 間嶋拓也, 上田茂典, 樋口透, 寺部一弥

  • MEMRISYS 2021 Excellent Poster Presentation Award

    2021.11   The Electric Double Layer Effect and its Strong Suppression in Li+ Solid Electrolyte‐based Transistors

  • MANA International Symposium 2021 Excellent Poster Presentation Award

    2021.03   Room-Temperature Manipulation of Magnetization Direction in Magnetite, Achieved with an All-Solid-State Redox Transistor

    Winner： W. Namiki, T. Tsuchiya, M. Takayanagi, T. Higuchi, K. Terabe

  • 電気化学会第87回大会優秀学生発表賞

    2020.04  

  • MANA International Symposium 2019 Excellent poster presentation award

    2019.03  

    Winner： Takashi Tsuchiya, Tohru Tsuruoka, Song-Ju Kim, Kazuya Terabe, Masakazu Aono

  • 一般社団法人 日本固体イオニクス学会 第14回固体イオニクスセミナー 優秀ポスター賞

    2018.09  

    Winner： 江藤大貴, 土屋敬志, 高栁真, 樋口透, 寺部一弥

  • 第26回日本MRS年次大会 講演奨励賞

    2017.02  

    Winner： 川村欣也, 土屋敬志, 高栁真, 寺部一弥, 樋口透

  • 第25回日本MRS年次大会 講演奨励賞

    2016.02  

    Winner： 鈴木直哉, 川村欣也, 土屋敬志, 簑原誠人, 小林正起, 組頭広志, 樋口透

  • MRS Fall Meeting & Exhibit Symposium K Best Poster Award

    2014.11  

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Papers

  • Ion‐Gating Reservoir Computing for Preprocessing‐Free Speech Recognition from Throat Vibrations

    Daiki Nishioka, Akito Tateyama, Hina Kitano, Takashi Nakanishi, Kazuya Terabe, Takashi Tsuchiya

    Advanced Electronic Materials    2026.04

    DOI

  • Two Orders of Magnitude Reduction in Computational Load Achieved by Ultrawideband Responses of an Ion-Gating Reservoir

    Daiki Nishioka, Hina Kitano, Wataru Namiki, Satofumi Souma, Kazuya Terabe, Takashi Tsuchiya

    ACS Nano    2025.10

    DOI

  • Iono–Magnonic Reservoir Computing With Chaotic Spin Wave Interference Manipulated by Ion‐Gating

    Wataru Namiki, Daiki Nishioka, Yuki Nomura, Takashi Tsuchiya, Kazuo Yamamoto, Kazuya Terabe

    Advanced Science    2024.11

    DOI

  • Few- and single-molecule reservoir computing experimentally demonstrated with surface-enhanced Raman scattering and ion gating

    Daiki Nishioka, Yoshitaka Shingaya, Takashi Tsuchiya, Tohru Higuchi, Kazuya Terabe

    Science Advances   10 ( 9 )  2024.03  [Refereed]

    Authorship：Corresponding author

    　View Summary

    Molecule-based reservoir computing (RC) is promising for achieving low power consumption neuromorphic computing, although the information-processing capability of small numbers of molecules is not clear. Here, we report a few- and single-molecule RC that uses the molecular vibration dynamics in the para-mercaptobenzoic acid (pMBA) detected by surface-enhanced Raman scattering (SERS) with tungsten oxide nanorod/silver nanoparticles. The Raman signals of the pMBA molecules, adsorbed at the SERS active site of the nanorod, were reversibly perturbated by the application of voltage-induced local pH changes near the molecules, and then used to perform time-series analysis tasks. Despite the small number of molecules used, our system achieved good performance, including >95% accuracy in various nonlinear waveform transformations, 94.3% accuracy in solving a second-order nonlinear dynamic system, and a prediction error of 25.0 milligrams per deciliter in a 15-minute-ahead blood glucose level prediction. Our work provides a concept of few-molecular computing with practical computation capabilities.

    DOI

  • Edge-of-chaos learning achieved by ion-electron–coupled dynamics in an ion-gating reservoir

    Daiki Nishioka, Takashi Tsuchiya, Wataru Namiki, Makoto Takayanagi, Masataka Imura, Yasuo Koide, Tohru Higuchi, Kazuya Terabe

    Science Advances   8 ( 50 ) eade1156-1 - eade1156-13  2022.12  [Refereed]

    Authorship：Corresponding author

    　View Summary

    Physical reservoir computing has recently been attracting attention for its ability to substantially reduce the computational resources required to process time series data. However, the physical reservoirs that have been reported to date have had insufficient computational capacity, and most of them have a large volume, which makes their practical application difficult. Here, we describe the development of a Li + electrolyte–based ion-gating reservoir (IGR), with ion-electron–coupled dynamics, for use in high-performance physical reservoir computing. A variety of synaptic responses were obtained in response to past experience, which were stored as transient charge density patterns in an electric double layer, at the Li + electrolyte/diamond interface. Performance for a second-order nonlinear dynamical equation task is one order of magnitude higher than memristor-based reservoirs. The edge-of-chaos state of the IGR enabled the best computational capacity. The IGR described here opens the way for high-performance and integrated neural network devices.

    DOI

  • The electric double layer effect and its strong suppression at Li+ solid electrolyte/hydrogenated diamond interfaces

    Takashi Tsuchiya, Makoto Takayanagi, Kazutaka Mitsuishi, Masataka Imura, Shigenori Ueda, Yasuo Koide, Tohru Higuchi, Kazuya Terabe

    Communications Chemistry   4 ( 1 )  2021.08  [Refereed]

    Authorship：Lead author, Corresponding author

    　View Summary

    <title>Abstract</title>The electric double layer (EDL) effect at solid electrolyte/electrode interfaces has been a key topic in many energy and nanoelectronics applications (e.g., all-solid-state Li+ batteries and memristors). However, its characterization remains difficult in comparison with liquid electrolytes. Herein, we use a novel method to show that the EDL effect, and its suppression at solid electrolyte/electronic material interfaces, can be characterized on the basis of the electric conduction characteristics of hydrogenated diamond(H-diamond)-based EDL transistors (EDLTs). Whereas H-diamond-based EDLT with a Li-Si-Zr-O Li+ solid electrolyte showed EDL-induced hole density modulation over a range of up to three orders of magnitude, EDLT with a Li-La-Ti-O (LLTO) Li+ solid electrolyte showed negligible enhancement, which indicates strong suppression of the EDL effect. Such suppression is attributed to charge neutralization in the LLTO, which is due to variation in the valence state of the Ti ions present. The method described is useful for quantitatively evaluating the EDL effect in various solid electrolytes.

    DOI

  • Ionic decision-maker created as novel, solid-state devices

    Takashi Tsuchiya, Tohru Tsuruoka, Song-Ju Kim, Kazuya Terabe, Masakazu Aono

    Science Advances   4 ( 9 ) eaau2057 - eaau2057  2018.09  [Refereed]

    Authorship：Lead author, Corresponding author

    DOI PubMed

  • Computational performance at the edge-of-chaos in the spin-wave interference-based physical reservoir computing

    Maki Nishimura, Daiki Nishioka, Wataru NAMIKI, Sota Hikasa, Ryo Iguchi, Kazuya TERABE, Takashi TSUCHIYA

    Japanese Journal of Applied Physics    2026.04

    DOI

  • Analysis of physical and virtual nodes of ion-gating reservoir for network size reduction

    Hina Kitano, Daiki Nishioka, Kazuya TERABE, Takashi TSUCHIYA

    Japanese Journal of Applied Physics    2026.04

    DOI

  • High-performance reservoir computing utilizing spin wave interfered with physical masking wave

    Wataru NAMIKI, Daiki Nishioka, Kazuya TERABE, Takashi TSUCHIYA

    Japanese Journal of Applied Physics    2026.04

    DOI

  • Enhanced High Dimensionality and the Information Processing Capacity in Interfered Spin Wave‐Based Reservoir Computing, Achieved With Eight Detectors

    Sota Hikasa, Wataru Namiki, Daiki Nishioka, Maki Nishimura, Ryo Iguchi, Kazuya Terabe, Takashi Tsuchiya

    Advanced Electronic Materials    2026.02

    DOI

  • High-accuracy prediction for the NARMA task achieved by eight detectors in nonlinearly interfered spin waves-based physical reservoir computing

    Maki Nishimura, Wataru NAMIKI, Daiki Nishioka, Sota Hikasa, Ryo Iguchi, Kazuya TERABE, Takashi TSUCHIYA

    Japanese Journal of Applied Physics    2026.02

    DOI

  • Physical masking-induced enhancement of information processing capacity in a redox-type ion-gating reservoir

    Daiki Nishioka, Kaoru Shibata, Wataru NAMIKI, Kazuya TERABE, Takashi TSUCHIYA

    Japanese Journal of Applied Physics    2025.11

    DOI

  • Enhanced computing performance of MoS2-based Raman-ion-gating reservoir achieved by combining reservoir states from current response and resonant Raman scattering

    Yoshitaka Shingaya, Daiki Nishioka, Kazuya Terabe, Takashi Tsuchiya

    Applied Physics Letters    2025.10

    DOI

  • Physical reservoir computing with graphene-based solid electric double layer transistor and the information processing capacity analysis

    Hina Kitano, Daiki Nishioka, Kazuya TERABE, Takashi TSUCHIYA

    Applied Physics Express    2025.02

    DOI

  • Investigation of electric double layer effects at Li3PO4 Li+ solid electrolyte thin film interfaces using a field-effect transistor with Al-doped SiC (0001) single crystal

    Kaoru Shibata, Wataru NAMIKI, Daiki Nishioka, Kazuya TERABE, Takashi TSUCHIYA

    Japanese Journal of Applied Physics    2025.01

    DOI

  • Reservoir Computing with Graphene-Based Lithium-Ion Operated Electric Double Layer Transistors

    Hina Kitano, Daiki Nishioka, Wataru Namiki, Kazuya Terabe, Takashi Tsuchiya

    ECS Meeting Abstracts    2024.11

    DOI

  • (Invited) Ionic Nanoarchitectonics to Create Novel Functional and High-Performance Devices, Such As Neuromorphic Devices

    Kazuya Terabe, Takashi Tsuchiya, Tohru Tsuruoka

    ECS Meeting Abstracts    2024.11

    DOI

  • Evaluating Electric Double Layer Effects at Solid Electrolyte Interfaces with Field-Effect Transistor Utilizing p-Doped SiC (100) Single Crystal

    Kaoru Shibata, Wataru Namiki, Daiki Nishioka, Kazuya Terabe, Takashi Tsuchiya

    ECS Meeting Abstracts    2024.11

    DOI

  • Iono-Magnonic Reservoir Computing Utilizing Interfered Spin Wave Manipulated By Ion-Gating

    Wataru Namiki, Daiki Nishioka, Yuki Nomura, Kazuo Yamamoto, Kazuya Terabe, Takashi Tsuchiya

    ECS Meeting Abstracts    2024.11

    DOI

  • Neuromorphic Computing Based on Few-Molecule Vibration Dynamics Achieved By Surface-Enhanced Raman Scattering and Ion-Gating Stimulation

    Daiki Nishioka, Yoshitaka Shingaya, Kazuya Terabe, Takashi Tsuchiya

    ECS Meeting Abstracts    2024.11

    DOI

  • Optimization of Reservoir Computing Utilizing Interfered Spin Waves

    Maki Nishimura, Wataru Namiki, Daiki Nishioka, Kazuya Terabe, Takashi Tsuchiya

    ECS Meeting Abstracts    2024.11

    DOI

  • Physical Reservoir Computing Utilizing Ion‐Gating Transistors Operating in Electric Double Layer and Redox Mechanisms

    Takashi Tsuchiya, Daiki Nishioka, Wataru Namiki, Kazuya Terabe

    Advanced Electronic Materials    2024.11

    DOI

  • Electric Double-Layer Effect in Solid State Ionics-Based Transistors and the Application to Neuromorphic Computing

    Takashi Tsuchiya, Makoto Takayanagi, Daiki Nishioka, Wataru Namiki, Kazuya Terabe

    The Materials Research Society Series     513 - 523  2024.10

    DOI

  • A high-performance deep reservoir computer experimentally demonstrated with ion-gating reservoirs

    Daiki Nishioka, Takashi Tsuchiya, Masataka Imura, Yasuo Koide, Tohru Higuchi, Kazuya Terabe

    Communications Engineering   3 ( 1 )  2024.06  [Refereed]

    Authorship：Corresponding author

    　View Summary

    Abstract

    While physical reservoir computing is a promising way to achieve low power consumption neuromorphic computing, its computational performance is still insufficient at a practical level. One promising approach to improving its performance is deep reservoir computing, in which the component reservoirs are multi-layered. However, all of the deep-reservoir schemes reported so far have been effective only for simulation reservoirs and limited physical reservoirs, and there have been no reports of nanodevice implementations. Here, as an ionics-based neuromorphic nanodevice implementation of deep-reservoir computing, we report a demonstration of deep physical reservoir computing with maximum of four layers using an ion gating reservoir, which is a small and high-performance physical reservoir. While the previously reported deep-reservoir scheme did not improve the performance of the ion gating reservoir, our deep-ion gating reservoir achieved a normalized mean squared error of 9.08 × 10−3 on a second-order nonlinear autoregressive moving average task, which is the best performance of any physical reservoir so far reported in this task. More importantly, the device outperformed full simulation reservoir computing. The dramatic performance improvement of the ion gating reservoir with our deep-reservoir computing architecture paves the way for high-performance, large-scale, physical neural network devices.

    DOI

  • Fast physical reservoir computing, achieved with nonlinear interfered spin waves

    Wataru Namiki, Daiki Nishioka, Takashi Tsuchiya, Kazuya Terabe

    Neuromorphic Computing and Engineering   4 ( 2 ) 024015 - 024015  2024.06  [Refereed]  [Invited]

    Authorship：Corresponding author

    　View Summary

    Abstract

    Reservoir computing is a promising approach to implementing high-performance artificial intelligence that can process input data at lower computational costs than conventional artificial neural networks. Although reservoir computing enables real-time processing of input time-series data on artificial intelligence mounted on terminal devices, few physical devices are capable of high-speed operation for real-time processing. In this study, we introduce spin wave interference with a stepped input method to reduce the operating time of the physical reservoir, and second-order nonlinear equation task and second-order nonlinear autoregressive mean averaging, which are well-known benchmark tasks, were carried out to evaluate the operating speed and prediction accuracy of said physical reservoir. The demonstrated reservoir device operates at the shortest operating time of 13 ms/5000-time steps, compared to other compact reservoir devices, even though its performance is higher than or comparable to such physical reservoirs. This study is a stepping stone toward realizing an artificial intelligence device capable of real-time processing on terminal devices.

    DOI

  • Opto-magnonic reservoir computing coupling nonlinear interfered spin wave and visible light switching

    Wataru Namiki, Yu Yamaguchi, Daiki Nishioka, Takashi Tsuchiya, Kazuya Terabe

    Materials Today Physics   45   101465 - 101465  2024.06  [Refereed]

    Authorship：Corresponding author

    DOI

  • Electric double layer effect in the vicinity of solid electrolyte/diamond interfaces and the application to neuromorphic computing

    Takashi Tsuchiya, Makoto Takayanagi, Daiki Nishioka, Wataru Namiki, Kazuya Terabe

    Journal of Solid State Electrochemistry    2024.05  [Refereed]

    Authorship：Lead author, Corresponding author

    DOI

  • Magnetization Vector Rotation Reservoir Computing Operated by Redox Mechanism

    Wataru Namiki, Daiki Nishioka, Takashi Tsuchiya, Tohru Higuchi, Kazuya Terabe

    Nano Letters   24 ( 15 ) 4383 - 4392  2024.03  [Refereed]

    Authorship：Corresponding author

    DOI

  • Asymmetric transition of electrical resistance in an all-solid-state redox device with Fe3O4 and Li-ion electrolyte thin films for physical reservoir computing

    Wataru Namiki, Takashi Tsuchiya, Daiki Nishioka, Tohru Higuchi, Kazuya Terabe

    Japanese Journal of Applied Physics   63 ( 3 ) 03SP13 - 03SP13  2024.02  [Refereed]

    Authorship：Corresponding author

    　View Summary

    Abstract

    In recent years, ion-gating devices have been used in artificial neuromorphic computing and achieved high performance for time-series data processing. However, the origin of this performance still needs to be clarified. In this study, we fabricated an all-solid-state redox device with functional material Fe3O4 and Li-ion conducting solid electrolytes, and the transient response of the electrical resistance of the Fe3O4 thin film to time-series data input was investigated. The transition between high and low electrical resistance states was asymmetric, and residual Li-ion in the thin film led to a hysteresis effect. These unique features, which are induced by ion-electron dynamics coupling, contributes to the high performance of physical reservoir computing utilizing an ion-gating device.

    DOI

  • Inverted input method for computing performance enhancement of the ion-gating reservoir

    Yu Yamaguchi, Daiki Nishioka, Wataru Namiki, Takashi Tsuchiya, Masataka Imura, Yasuo Koide, Tohru Higuchi, Kazuya Terabe

    Applied Physics Express   17 ( 2 ) 024501 - 024501  2024.02  [Refereed]

    Authorship：Corresponding author

    　View Summary

    Abstract

    Physical reservoir computing (PRC) is useful for edge computing, although the challenge is to improve computational performance. In this study, we developed an inverted input method, the inverted input is additionally applied to a physical reservoir together with the original input, to improve the performance of the ion-gating reservoir. The error in the second-order nonlinear equation task was 7.3 × 10−5, the lowest error in reported PRC to date. Improvement of high dimensionality by the method was confirmed to be the origin of the performance enhancement. This inverted input method is versatile enough to enhance the performance of any other PRC.

    DOI

  • Highly Conducting Sc and Y co-doped Zirconia Solid Electrolyte Thin Films Prepared via Pulsed Laser Deposition for Solid Oxide Electrochemical Cells Applications

    Jennet Rabo, Takashi Tsuchiya, Kazuya Terabe, Rinlee Butch Cervera

    ECS Meeting Abstracts    2023.12

    DOI

  • Redox-based ion-gating reservoir consisting of (104) oriented LiCoO<inf>2</inf> film, assisted by physical masking

    Kaoru Shibata, Daiki Nishioka, Wataru Namiki, Takashi Tsuchiya, Tohru Higuchi, Kazuya Terabe

    Scientific Reports   13 ( 1 )  2023.12

    DOI PubMed

  • Effects of Mg Doping to a LiCoO<inf>2</inf> Channel on the Synaptic Plasticity of Li Ion-Gated Transistors

    Samapika Mallik, Tohru Tsuruoka, Takashi Tsuchiya, Kazuya Terabe

    ACS Applied Materials and Interfaces   15 ( 40 ) 47184 - 47195  2023.10

    DOI PubMed

  • Enhanced synaptic characteristics of H x WO3-based neuromorphic devices, achieved by current pulse control, for artificial neural networks

    Daiki Nishioka, Takashi Tsuchiya, Tohru Higuchi, Kazuya Terabe

    Neuromorphic Computing and Engineering   3 ( 3 ) 034008 - 034008  2023.08  [Refereed]

    Authorship：Corresponding author

    　View Summary

    Abstract

    Artificial synapses capable of mimicking the fundamental functionalities of biological synapses are critical to the building of efficient neuromorphic systems. We have developed a HxWO3-based artificial synapse that replicates such synaptic functionalities via an all-solid-state redox transistor mechanism. The subject synaptic-HxWO3 transistor, which operates by current pulse control, exhibits excellent synaptic properties including good linearity, low update variation and conductance modulation characteristics. We investigated the performance of the device under various operating conditions, and the impact of the characteristics of the device on artificial neural network computing. Although the subject synaptic-HxWO3 transistor showed an insufficient recognition accuracy of 66% for a handwritten digit recognition task with voltage pulse control, it achieved an excellent accuracy of 88% with current pulse control, which is approaching the 93% accuracy of an ideal synaptic device. This result suggests that the performance of any redox-transistor-type artificial synapse can be dramatically improved by current pulse control, which in turn paves the way for further exploration and the evolution of advanced neuromorphic systems, with the potential to revolutionize the artificial intelligence domain. It further marks a significant stride towards the realization of high-performance, low-power consumption computing devices.

    DOI

  • Experimental Demonstration of High‐Performance Physical Reservoir Computing with Nonlinear Interfered Spin Wave Multidetection

    Wataru Namiki, Daiki Nishioka, Yu Yamaguchi, Takashi Tsuchiya, Tohru Higuchi, Kazuya Terabe

    Advanced Intelligent Systems    2023.08  [Refereed]

    Authorship：Corresponding author

    　View Summary

    Physical reservoir computing, which is a promising method for the implementation of highly efficient artificial intelligence devices, requires a physical system with nonlinearity, fading memory, and the ability to map in high dimensions. Although it is expected that spin wave interference can perform as highly efficient reservoir computing in some micromagnetic simulations, there has been no experimental verification to date. Herein, reservoir computing is demonstrated that utilizes multidetected nonlinear spin wave interference in an yttrium‐iron‐garnet single crystal. The subject computing system achieves excellent performance when used for hand‐written digit recognition, second‐order nonlinear dynamical tasks, and nonlinear autoregressive moving average (NARMA). It is of particular note that normalized mean square errors for NARMA2 and second‐order nonlinear dynamical tasks are 1.81 × 10−2 and 8.37 × 10−5, respectively, which are the lowest figures for any experimental physical reservoir so far reported. Said high performance is achieved with higher nonlinearity and the large memory capacity of interfered spin wave multidetection.

    DOI DOI2

  • Room temperature fabrication of highly proton conductive amorphous zirconia-based thin films achieved through precise nanostructure control

    Makoto Takayanagi, Takashi Tsuchiya, Daiki Nishioka, Tohru Higuchi, Kazuya Terabe

    Journal of Materials Chemistry C    2023.08  [Refereed]

    Authorship：Corresponding author

    　View Summary

    YSZ thin films with controlled microstructure were fabricated without annealing process. The microstructure strongly depended on the oxygen partial pressure during the deposition, and the proton conductivity also varied significantly.

    DOI

  • A Redox‐Based Ion‐Gating Reservoir, Utilizing Double Reservoir States in Drain and Gate Nonlinear Responses

    Tomoki Wada, Daiki Nishioka, Wataru Namiki, Takashi Tsuchiya, Tohru Higuchi, Kazuya Terabe

    Advanced Intelligent Systems   2300123   1 - 12  2023.06  [Refereed]

    Authorship：Corresponding author

    DOI

  • Ultrafast-switching of an all-solid-state electric double layer transistor with a porous yttria-stabilized zirconia proton conductor and the application to neuromorphic computing

    Makoto Takayanagi, Daiki Nishioka, Takashi Tsuchiya, Masataka Imura, Yasuo Koide, Tohru Higuchi, Kazuya Terabe

    Materials Today Advances   18   100393 - 100393  2023.06  [Refereed]

    Authorship：Corresponding author

    DOI

  • Analysis of Iodide Transport on Methyl Ammonium Lead Iodide Perovskite Solar Cell Structure Through Operando Hard X-ray Photoelectron Spectroscopy

    Ibrahima Gueye, Yasuhiro Shirai, Takahiro Nagata, Takashi Tsuchiya, Dhruba B. Khadka, Masatoshi Yanagida, Okkyun Seo, Kenjiro Miyano, Osami Sakata

    Chemistry of Materials   35 ( 5 ) 1948 - 1960  2023.02

    DOI

  • Accelerated/Decelerated Dynamics of the Electric Double Layer at Hydrogen-Terminated Diamond/Li+ Solid Electrolyte Interface

    Makoto Takayanagi, Takashi Tsuchiya, Daiki Nishioka, Masataka Imura, Yasuo Koide, Tohru Higuchi, Kazuya Terabe

    Materials Today Physics   31   101006 - 101006  2023.02  [Refereed]

    Authorship：Corresponding author

    DOI

  • Atomic scale switches based on solid state ionics

    Kazuya Terabe, Takashi Tsuchiya, Tohru Tsuruoka

    Advances in Physics: X   7 ( 1 )  2022.12  [Refereed]  [Invited]

    DOI

  • さまざまな固体電解質/固体界面機能を利用するナノイオニクスデバイス

    土屋敬志, 並木航, 鶴岡徹, 寺部一弥

    固体物理   57 ( 12 ) 9 - 23  2022.12  [Refereed]  [Invited]

    Authorship：Lead author, Corresponding author

  • Solid state ionics for the development of artificial intelligence components

    Kazuya Terabe, Takashi Tsuchiya, Tohru Tsuruoka

    Japanese Journal of Applied Physics   61 ( SM ) SM0803 - SM0803  2022.10  [Refereed]  [Invited]

    　View Summary

    Abstract

    Solid state ionics is a field that elucidates and applies the phenomena of ion transport in solids, in contrast to electronics which elucidates and applies the phenomena to electron transport. In recent years, unique functional solid state ionics devices have been developed for information and communication equipment, using not only solid electrolyte but also mixed conductors that transport ions and electrons in solids, and the fused field of solid state ionics devices and electronics devices is gaining importance. Herein we provide an overview of solid state ionics and various solid state ionics devices that have been developed to date, with emphasis on recently introduced solid state ionics devices made of solid electrolytes and mixed conductors. Such devices are expected to be indispensable for the future development of information and communication equipment, especially in relation to artificial intelligence, where electronic devices have been predominant.

    DOI

  • In situ manipulation of perpendicular magnetic anisotropy in half-metallic NiCo2O4 thin film by proton insertion

    T. Wada, W. Namiki, T. Tsuchiya, D. Kan, Y. Shimakawa, T. Higuchi, K. Terabe

    Japanese Journal of Applied Physics   61 ( SM ) SM1002 - SM1002  2022.10

    　View Summary

    Abstract

    Herein we report the manipulation of perpendicular magnetic anisotropy (PMA), a very important technique for spintronics devices, which is achieved in an all-solid-state redox (reduction/oxidation) device. The device consisted of NiCo2O4 (NCO) thin film with a c-axis orientation and a proton-conducting polymer (Nafion). The PMA of NCO can be manipulated in situ with low voltage (V ≤ 0.7 V) due to the utilization of a proton-conducting solid electrolyte. The magnetic anisotropy variation was quantitatively evaluated by an anomalous Hall measurement. The magnetic anisotropy field of the NCO thin film was successfully manipulated in the range of 5%, although the rotation of the easy axis of magnetization was not observed. This modulation is attributed to the strain and electronic configuration variation by proton insertion. This manipulation method for PMA with the solid electrolyte enables a variety of reservoir states and contributes to lower power consumption and high-precision machine learning.

    DOI

  • Nanoarchitectonics Intelligence with atomic switch and neuromorphic network system

    Takashi TSUCHIYA, Tomonobu Nakayama, Katsuhiko ARIGA

    Applied Physics Express   15 ( 10 ) 100101-1 - 100101-28  2022.09  [Refereed]  [Invited]

    Authorship：Lead author, Corresponding author

    DOI

  • Electrochemical control and protonation of the strontium iron oxide SrFeOy by using proton-conducting electrolyte

    Yosuke Isoda, Daisuke Kan, Yumie Ogura, Takuya Majima, Takashi Tsuchiya, Yuichi Shimakawa

    Applied Physics Letters   120 ( 9 ) 091601 - 091601  2022.02  [Refereed]

    　View Summary

    To electrochemically control structural and transport properties of oxygen-deficient perovskite SrFeO y (2.5 ≦  y ≦ 3) (SFO) epitaxial films, we employed electric-field-effect transistor structures in which the proton-conducting solid electrolyte Nafion is used as a gate insulator. When a positive gate voltage ( VGS) is applied and protons are injected toward the film channel layer, the SFO films are electrochemically reduced, leading to increases in the channel resistance. On the other hand, when a negative VGS is applied and protons are removed, the SFO films are oxidized, and as a result, the channel resistances decrease. In addition, we found that the electrochemically reduced SFO films accommodate protons, forming the proton-containing oxide H xSrFeO2.5 whose proton concentration is determined by elastic recoil detection analysis to be x ∼ 0.11. Our results indicate the usefulness of the proton-conducting solid electrolyte for electrochemically controlling transition metal oxides and for exploring proton-containing oxides.

    DOI

  • Effects of Oxygen Partial Pressure and Substrate Temperature on the Structure and Morphology of Sc and Y Co-Doped ZrO2 Solid Electrolyte Thin Films Prepared via Pulsed Laser Deposition

    Jennet R. Rabo, Makoto Takayanagi, Takashi Tsuchiya, Hideki Nakajima, Kazuya Terabe, Rinlee Butch M. Cervera

    Materials   15 ( 2 ) 410 - 410  2022.01  [Refereed]

    　View Summary

    Scandium (Sc) and yttrium (Y) co-doped ZrO2 (ScYSZ) thin films were prepared on a SiO2-Si substrate via pulsed laser deposition (PLD) method. In order to obtain good quality thin films with the desired microstructure, various oxygen partial pressures (PO2) from 0.01 Pa to 10 Pa and substrate temperatures (Ts) from 25 °C to 800 °C were investigated. X-ray diffraction (XRD) patterns results showed that amorphous ScYSZ thin films were formed at room substrate temperature while cubic polycrystalline thin films were obtained at higher substrate temperatures (Ts = 200 °C, 400 °C, 600 °C, 800 °C). Raman spectra revealed a distinct Raman shift at around 600 cm−1 supporting a cubic phase. However, a transition from cubic to tetragonal phase can be observed with increasing oxygen partial pressure. Photoemission spectroscopy (PES) spectra suggested supporting analysis that more oxygen vacancies in the lattice can be observed for samples deposited at lower oxygen partial pressures resulting in a cubic structure with higher dopant cation binding energies as compared to the tetragonal structure observed at higher oxygen partial pressure. On the other hand, dense morphologies can be obtained at lower  PO2 (0.01 Pa and 0.1 Pa) while more porous morphologies can be obtained at higher PO2 (1.0 Pa and 10 Pa).

    DOI

  • Ionic Nanoarchitectonics for Artificial Intelligence Devices

    Kazuya Terabe, Tohru Tsuruoka, Takashi Tsuchiya, Tsuyoshi Hasegawa

    Memristor Computing Systems     191 - 218  2022  [Refereed]  [Invited]

    DOI

  • Ionic Nanoarchitectonics: Creation of Polymer-Based Atomic Switch and Decision-Making Device

    Kazuya Terabe, Tohru Tsuruoka, Takashi Tsuchiya

    NIMS Monographs     113 - 126  2022  [Refereed]  [Invited]

    DOI

  • A floating gate negative capacitance MoS2 phototransistor with high photosensitivity

    Roda Nur, Takashi Tsuchiya, Kasidit Toprasertpong, Kazuya Terabe, Shinichi Takagi, Mitsuru Takenaka

    Nanoscale   14 ( 5 ) 2013 - 2022  2022  [Refereed]

    　View Summary

    Steep slope photodetectors hold a promising potential in photodetection applications due to efficient extraction of photocarriers. We explore a floating gate negative capacitance phototransistor to enhance the light sensitivity via charge-trapping.

    DOI

  • A Variety of Functional Devices Realized by Ionic Nanoarchitectonics, Complementing Electronics Components

    Kazuya Terabe, Takashi Tsuchiya, Tohru Tsuruoka

    Advanced Electronic Materials   8 ( 8 ) 2100645 - 2100645  2021.10  [Refereed]  [Invited]

    DOI

  • In situ hard X-ray photoelectron spectroscopy on the origin of irreversibility in electrochromic LixWO3 thin films

    Makoto Takayanagi, Takashi Tsuchiya, Shigenori Ueda, Tohru Higuchi, Kazuya Terabe

    Applied Surface Science   568   150898 - 150898  2021.08  [Refereed]

    Authorship：Corresponding author

    DOI

  • Substrate effect on the neuromorphic function of nanoionics-based transistors fabricated using WO3 thin film

    J. Manikandan, T. Tsuchiya, M. Takayanagi, K. Kawamura, T. Higuchi, K. Terabe, R. Jayavel

    Solid State Ionics   364   115638 - 115638  2021.06  [Refereed]

    DOI

  • High responsivity in MoS2 phototransistors based on charge trapping HfO2 dielectrics

    Roda Nur, Takashi Tsuchiya, Kasidit Toprasertpong, Kazuya Terabe, Shinichi Takagi, Mitsuru Takenaka

    Communications Materials   1 ( 1 )  2020.12  [Refereed]

    　View Summary

    <title>Abstract</title>2D Transition Metal Dichalcogenides hold a promising potential in future optoelectronic applications due to their high photoresponsivity and tunable band structure for broadband photodetection. In imaging applications, the detection of weak light signals is crucial for creating a better contrast between bright and dark pixels in order to achieve high resolution images. The photogating effect has been previously shown to offer high light sensitivities; however, the key features required to create this as a dominating photoresponse has yet to be discussed. Here, we report high responsivity and high photogain MoS2 phototransistors based on the dual function of HfO2 as a dielectric and charge trapping layer to enhance the photogating effect. As a result, these devices offered a very large responsivity of 1.1 × 106 A W−1, a photogain &gt;109, and a detectivity of 5.6 × 1013 Jones under low light illumination. This work offers a CMOS compatible process and technique to develop highly photosensitive phototransistors for future low-powered imaging applications.

    DOI

  • Room-Temperature Manipulation of Magnetization Angle, Achieved with an All-Solid-State Redox Device

    Wataru Namiki, Takashi Tsuchiya, Makoto Takayanagi, Tohru Higuchi, Kazuya Terabe

    ACS Nano   14 ( 11 ) 16065 - 16072  2020.11  [Refereed]

    Authorship：Corresponding author

    DOI

  • Switching Response of Hydrogen-Terminated-Diamond-Based All-Solid-State Electric-Double-Layer Transistor

    Makoto Takayanagi, Takashi Tsuchiya, Masataka Imura, Yasuo Koide, Tohru Higuchi, Kazuya Terabe

    ECS Meeting Abstracts    2020.11

    DOI

  • Oxygen-tolerant operation of all-solid-state ionic-gating devices: advantage of all-solid-state structure for ionic-gating

    Daiki Nishioka, Takashi Tsuchiya, Tohru Higuchi, Kazuya Terabe

    Japanese Journal of Applied Physics   59 ( SI ) SIIG09 - SIIG09  2020.06  [Refereed]

    Authorship：Corresponding author

    DOI

  • A graphene oxide-based ionic decision-maker for simple fabrication and stable operation

    Y. Kitagawa, T. Tsuchiya, D. Etoh, M. Takayanagi, W. Namiki, T. Higuchi, K. Terabe

    Japanese Journal of Applied Physics   59 ( SI ) SIIG03 - SIIG03  2020.06  [Refereed]

    Authorship：Corresponding author

    DOI

  • A mesoporous SiO2 thin films-based ionic decision-maker for solving multi-armed bandit problems

    D. Etoh, T. Tsuchiya, Y. Kitagawa, M. Takayanagi, Y. Itoh, T. Tsuruoka, T. Higuchi, K. Terabe

    Japanese Journal of Applied Physics   59 ( SI ) SIIG01 - SIIG01  2020.06  [Refereed]

    Authorship：Corresponding author

    DOI

  • Surface Proton Conduction of Sm-Doped CeO<inf>2-δ</inf> Thin Film Preferentially Grown on Al<inf>2</inf>O<inf>3</inf> (0001)

    Nishioka, D., Tsuchiya, T., Namiki, W., Takayanagi, M., Kawamura, K., Fujita, T., Yukawa, R., Horiba, K., Kumigashira, H., Higuchi, T.

    Nanoscale Research Letters   15 ( 1 )  2020  [Refereed]

    DOI

  • Oxide ion and proton conduction controlled in nano-grained yttria stabilized ZrO2 thin films prepared by pulse laser deposition

    Daiki Etoh, Takashi Tsuchiya, Makoto Takayanagi, Tohru Higuchi, Kazuya Terabe

    Japanese Journal of Applied Physics   58 ( SD ) SDDG01 - SDDG01  2019.06  [Refereed]

    Authorship：Corresponding author

    DOI

  • Sr-diffusion-induced inhibition of (100)-oriented growth Ca1−x Sr x VO3 thin film on a LaAlO3 substrate in pulsed laser deposition

    Takashi Tsuchiya

    Japanese Journal of Applied Physics   58 ( SD )  2019.06  [Refereed]

    DOI

  • In Situ Hard X-ray Photoelectron Spectroscopy of Space Charge Layer in a ZnO-Based All-Solid-State Electric Double-Layer Transistor

    Takashi Tsuchiya, Yaomi Itoh, Yoshikazu Yamaoka, Shigenori Ueda, Yukihiro Kaneko, Taku Hirasawa, Masa-aki Suzuki, Kazuya Terabe

    The Journal of Physical Chemistry C   123 ( 16 ) 10487 - 10493  2019.04  [Refereed]

    Authorship：Lead author, Corresponding author

    DOI

  • Conductivity Modulation by CaVO3-based All-solid-state Redox Transistor with Ion Transport of Li+ or H+

    Makoto Takayanagi, Takashi Tsuchiya, Wataru Namiki, Yuki Kitagawa, Daiki Etoh, Daiki Nishioka, Tsunetomo Yamada, Tohru Higuchi, Kazuya Terabe

    Transactions of the Materials Research Society of Japan   44 ( 2 ) 57 - 60  2019.04  [Refereed]

    Authorship：Corresponding author

    DOI

  • Resistivity Control of Epitaxial Ca1-xSrxVO3 Thin Film Achieved by H+ or Li+ Transport

    M. Takayanagi, T. Tsuchiya, T. Yamada, T. Higuchi

    APICENS Conference Proceedings     122 - 125  2019.03  [Refereed]

  • Surface Electronic Structure of Post-Annealed La0.67Sr0.33MnO3 Epitaxial Thin Films on SrTiO3(100)

    Kinya Kawamura, Takashi Tsuchiya, Makoto Takayanagi, Wataru Namiki, Kazuya Terabe, Tohru Higuchi

    TRANSACTIONS OF THE MATERIALS RESEARCH SOCIETY OF JAPAN   43 ( 3 ) 179 - 182  2018.06  [Refereed]

    DOI

  • Anomalous Electron Conduction of Nd0.6Sr0.4FeO3-δ Thin Film with Lattice Distortion and Oxygen Vacancies

    Wataru Namiki, Takashi Tsuchiya, Makoto Takayanagi, Kinya Kawamura, Takuya Kawaguchi, Tohru Higuchi

    TRANSACTIONS OF THE MATERIALS RESEARCH SOCIETY OF JAPAN   43 ( 3 ) 175 - 178  2018.06  [Refereed]

    DOI

  • Electron-Ion Mixed Conduction of Amorphous WO3-x Thin Film Probed by Soft-X-Ray Spectroscopy

    Ten Sugimoto, Kinya Kawamura, Takuya Kawaguchi, Takashi Tsuchiya, Chizuko Kudo, Tohru Higuchi

    TRANSACTIONS OF THE MATERIALS RESEARCH SOCIETY OF JAPAN   43 ( 2 ) 101 - 104  2018.05  [Refereed]

    DOI

  • Neuromorphic transistor achieved by redox reaction of WO3thin film

    Takashi Tsuchiya, Manikandan Jayabalan, Kinya Kawamura, Makoto Takayanagi, Tohru Higuchi, Ramasamy Jayavel, Kazuya Terabe

    Japanese Journal of Applied Physics   57 ( 4S ) 04FK01 - 04FK01  2018.04  [Refereed]

    Authorship：Lead author, Corresponding author

    DOI

  • Correlated Metal SrVO3 Based All-Solid-State Redox Transistors Achieved by Li+ or H+ Transport

    Makoto Takayanagi, Takashi Tsuchiya, Wataru Namiki, Tohru Higuchi, Kazuya Terabe

    Journal of the Physical Society of Japan   87 ( 3 ) 034802 - 034802  2018.03  [Refereed]

    Authorship：Corresponding author

    DOI

  • Unexpected metal-insulator transition in thick Ca1-xSrxVO3 film on SrTiO3 (100) single crystal

    Takayanagi, Makoto, Tsuchiya, Takashi, Namiki, Wataru, Ueda, Shigenori, Minohara, Makoto, Horiba, Koji, Kumigashira, Hiroshi, Terabe, Kazuya, Higuchi, Tohru

    Applied Physics Letters   112 ( 13 )  2018  [Refereed]

    DOI

  • Magnetic Control of Magneto-Electrochemical Cell and Electric Double Layer Transistor

    Takashi Tsuchiya, Masataka Imura, Yasuo Koide, Kazuya Terabe

    Scientific Reports   7 ( 1 )  2017.12  [Refereed]

    Authorship：Lead author, Corresponding author

    DOI

  • Current progress of solid state ionics on information and communication device technology

    Kazuya Terabe, Takashi Tsuchiya, Tohru Tsuruoka, Song-Ju Kim, Masakazu Aono

    17th International Workshop on Junction Technology, IWJT 2017     38 - 39  2017.06  [Refereed]

    DOI

  • P-type polymer-based Ag2S atomic switch for "tug of war" operation

    Carolin Lutz, Tsuyoshi Hasegawa, Takashi Tsuchiya, Christoph Adelsberger, Ryoma Hayakawa, Toyohiro Chikyow

    Japanese Journal of Applied Physics   56 ( 6 )  2017.06  [Refereed]

    DOI

  • Electrical-pulse-induced resistivity modulation in Pt/TiO2%δ/Pt multilayer device related to nanoionics-based neuromorphic function

    Kinya Kawamura, Takashi Tsuchiya, Makoto Takayanagi, Kazuya Terabe, Tohru Higuchi

    Japanese Journal of Applied Physics   56 ( 6 ) 06GH01-1 - 06GH01-5  2017.06  [Refereed]

    DOI

  • Hole-proton mixed conduction of perovskite-oxide thin film with oxygen vacancies and lattice distortion for SOFC electrode

    T. Higuchi, S. Furuichi, W. Namiki, M. Takayanagi, M. Minohara, K. Horiba, H. Kumigashira, T. Tsuchiya

    ECS Transactions   78 ( 1 ) 1973 - 1977  2017.05  [Refereed]

    DOI

  • Resonant photoemission and X-ray absorption spectroscopies of lithiated magnetite thin film

    Takashi Tsuchiya, Kinya Kawamura, Wataru Namiki, Shoto Furuichi, Makoto Takayanagi, Makoto Minohara, Masaki Kobayashi, Koji Horiba, Hiroshi Kumigashira, Kazuya Terabe, Tohru Higuchi

    Japanese Journal of Applied Physics   56 ( 4S ) 04CK01 - 04CK01  2017.04  [Refereed]

    Authorship：Lead author, Corresponding author

    DOI CiNii

  • Electron Conduction of Nd0.6Sr0.4FeO3-delta Thin Film with Oxygen Vacancies Prepared by RF Magnetron Sputtering

    Namiki, Wataru, Tsuchiya, Takashi, Takayanagi, Makoto, Furuichi, Shoto, Minohara, Makoto, Kobayashi, Masaki, Horiba, Koji, Kumigashira, Hiroshi, Higuchi, Tohru

    Journal of the Physical Society of Japan   86 ( 7 )  2017  [Refereed]

    DOI

  • Thickness-dependent surface proton conduction in (111) oriented yttria-stabilized zirconia thin film

    Takayanagi, Makoto, Tsuchiya, Takashi, Kawamura, Kinya, Minohara, Makoto, Horiba, Koji, Kumigashira, Hiroshi, Higuchi, Tohru

    Solid State Ionics   311   46 - 51  2017  [Refereed]

    DOI

  • Surface Electronic Structure of Proton-doped YSZ Thin Film by Soft-X-ray Photoemission Spectroscopy

    Makoto Takayanagi, Takashi Tsuchiya, Makoto Minohara, Masaki Kobayashi, Koji Horiba, Hiroshi Kumigashira, Tohru Higuchi

    Transactions of the Materials Research Society of Japan   42 ( 3 ) 61 - 64  2017

    DOI

  • Nanoionic devices: Interface nanoarchitechtonics for physical property tuning and enhancement

    Takashi Tsuchiya, Kazuya Terabe, Rui Yang, Masakazu Aono

    Japanese Journal of Applied Physics   55 ( 11 ) 1102A4 - 1102A4  2016.11  [Refereed]  [Invited]

    Authorship：Lead author, Corresponding author

    DOI

  • Comparison of subthreshold swing in SrTiO3-based all-solid-state electric-double-layer transistors with Li4SiO4or Y-stabilized-ZrO2solid electrolyte

    Takashi Tsuchiya, Masanori Ochi, Tohru Higuchi, Kazuya Terabe

    Japanese Journal of Applied Physics   55 ( 6S1 ) 06GJ03 - 06GJ03  2016.06  [Refereed]

    Authorship：Lead author, Corresponding author

    DOI

  • Comparison of subthreshold swing in SrTiO

    Tsuchiya Takashi, Ochi Masanori, Higuchi Tohru, Terabe Kazuya

    Jpn. J. Appl. Phys.   55 ( 6 ) 06GJ03  2016.04

    　View Summary

    SrTiO<inf>3</inf>(STO)-based all-solid-state electric-double-layer transistors (EDLTs) with a Li<inf>4</inf>SiO<inf>4</inf>(LSO) lithium ion conductor (i.e., electrolyte) or Y-stabilized-ZrO<inf>2</inf>(YSZ) proton conductor were fabricated. While the LSO device showed significant drain current enhancement at room temperature, the YSZ device needed high temperature to achieve comparable drain current enhancement due to the difference in ionic conductivity between the two electrolytes. Subthreshold swing (S), which is a parameter used to evaluate the steepness of drain current enhancement in field-effect transistors (FETs), was calculated to be 66 and 227 mV/dec, respectively, for LSO and YSZ EDLTs. The 66 mV/dec is very close to the theoretical limit (60 mV/dec) for conventional FETs, indicating that LSO is more suitable for STO-based EDLTs and that the type of solid electrolyte used greatly affects EDLT switching characteristics.

    DOI CiNii

  • In Situ Tuning of Magnetization and Magnetoresistance in Fe3O4 Thin Film Achieved with All-Solid-State Redox Device

    Takashi Tsuchiya, Kazuya Terabe, Masanori Ochi, Tohru Higuchi, Minoru Osada, Yoshiyuki Yamashita, Shigenori Ueda, Masakazu Aono

    ACS Nano   10 ( 1 ) 1655 - 1661  2016.01  [Refereed]

    Authorship：Lead author, Corresponding author

    DOI

  • Nanoionic devices enabling a multitude of new features

    Kazuya Terabe, Takashi Tsuchiya, Rui Yang, Masakazu Aono

    NANOSCALE   8 ( 29 ) 13873 - 13879  2016  [Refereed]

    DOI

  • Metal-insulator transition of valence-controlled VO2 thin film prepared by RF magnetron sputtering using oxygen radical

    Suetsugu, Takaaki, Shimazu, Yuichi, Tsuchiya, Takashi, Kobayashi, Masaki, Minohara, Makoto, Sakai, Enju, Horiba, Koji, Kumigashira, Hiroshi, Higuchi, Tohru

    Japanese Journal of Applied Physics   55 ( 6 )  2016  [Refereed]

    DOI

  • Electronic structure of c-axis controlled alpha-Fe2O3 thin film probed by soft-X-ray spectroscopy

    Kawamura, Kinya, Suzuki, Naoya, Tsuchiya, Takashi, Yamaguchi, Shohei, Ochi, Masanori, Suetsugu, Takaaki, Minohara, Makoto, Kobayashi, Masaki, Horiba, Koji, Kumigashira, Hiroshi, Higuchi, Tohru

    Japanese Journal of Applied Physics   55 ( 6 )  2016  [Refereed]

    DOI

  • Electron-Ion Mixed Conduction of BaCe0.90Y0.10O3-delta Thin Film Generated by Ru Substitution

    Ochi, Masanori, Tsuchiya, Takashi, Yamaguchi, Shohei, Suetsugu, Takaaki, Suzuki, Naoya, Kobayashi, Masaki, Minohara, Makoto, Horiba, Koji, Kumigashira, Hiroshi, Higuchi, Tohru

    Journal of the Physical Society of Japan   85 ( 3 )  2016  [Refereed]

    DOI

  • Electrical and structural properties of TiO2-delta thin film with oxygen vacancies prepared by RF magnetron sputtering using oxygen radical

    Kawamura, Kinya, Suzuki, Naoya, Tsuchiya, Takashi, Shimazu, Yuichi, Minohara, Makoto, Kobayashi, Masaki, Horiba, Koji, Kumigashira, Hiroshi, Higuchi, Tohru

    Japanese Journal of Applied Physics   55 ( 6 )  2016  [Refereed]

    DOI

  • Electrical and structural properties of BaCe0.85Ru0.05Y0.10O3-delta thin film prepared by RF magnetron sputtering

    Ochi, Masanori, Tsuchiya, Takashi, Yamaguchi, Shohei, Suetsugu, Takaaki, Suzuki, Naoya, Kobayashi, Masaki, Minohara, Makoto, Horiba, Koji, Kumigashira, Hiroshi, Higuchi, Tohru

    Japanese Journal of Applied Physics   55 ( 6 )  2016  [Refereed]

    DOI

  • Proton conduction on YSZ electrolyte thin films prepared by RF magnetron sputtering

    M. Takayanagi, S. Furuichi, W. Namiki, T. Tsuchiya, M. Minohara, M. Kobayashi, K. Horiba, H. Kumigashira, T. Higuchi

    ECS Transactions   75 ( 42 ) 115 - 120  2016  [Refereed]

    DOI

  • Ion conduction of BaPr03-5 thin film with mixed valence state for SOFC anode electrode

    S. Furuichi, T. Tsuchiya, M. Minohara, M. Kobayashi, K. Horiba, H. Kumigashira, T. Higuchi

    ECS Transactions   75 ( 42 ) 99 - 103  2016  [Refereed]

    DOI

  • Electron-ion mixed conduction of Nd0.6Sr 0.4FeO3. Cathode electrode thin film for solid oxide fuel cell

    W. Namiki, M. Takayanagi, S. Furuichi, T. Tsuchiya, M. Minohara, M. Kobayashi, K. Horiba, H. Kumigashira, T. Higuchi

    ECS Transactions   75 ( 42 ) 83 - 88  2016  [Refereed]

    DOI

  • Size-Controlled Agl/Ag Heteronanowires in Highly Ordered Alumina Membranes: Superionic Phase Stabilization and Conductivity

    Hemin Zhang, Takashi Tsuchiya, Changhao Lang, Kazuya Terabe

    NANO LETTERS   15 ( 8 ) 5161 - 5167  2015.08  [Refereed]

    DOI

  • Modulation of superconducting critical temperature in niobium film by using all-solid-state electric-double-layer transistor

    Takashi Tsuchiya, Satoshi Moriyama, Kazuya Terabe, Masakazu Aono

    Applied Physics Letters   107 ( 1 ) 013104 - 013104  2015.07  [Refereed]

    Authorship：Lead author, Corresponding author

    DOI

  • Effect of Ionic Conductivity on Response Speed of SrTiO3-Based All-Solid-State Electric-Double-Layer Transistor

    Takashi Tsuchiya, Masanori Ochi, Tohru Higuchi, Kazuya Terabe, Masakazu Aono

    ACS Applied Materials & Interfaces   7 ( 22 ) 12254 - 12260  2015.06  [Refereed]

    Authorship：Lead author, Corresponding author

    DOI

  • Metal-Insulator Transition of c-Axis-Controlled V2O3 Thin Film

    Yuichi Shimazu, Teppei Okumura, Takashi Tsuchiya, Atsushi Shimada, Kenji Tanabe, Kazuyasu Tokiwa, Masaki Kobayashi, Koji Horiba, Hiroshi Kumigashira, Tohru Higuchi

    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN   84 ( 6 )  2015.06  [Refereed]

    DOI

  • Electronic structure of Ti1-xFexO2-delta thin films with oxygen vacancies probed by soft X-ray spectroscopy

    Katsuya Usui, Shohei Yamaguchi, Naoya Suzuki, Yuichi Shimazu, Takashi Tsuchiya, Enju Sakai, Masaki Kobayashi, Koji Horiba, Hiroshi Kumigashira, Tohru Higuchi

    JAPANESE JOURNAL OF APPLIED PHYSICS   54 ( 6 )  2015.06  [Refereed]

    DOI

  • Electronic Structure of b-Axis Oriented VO2 Thin Film with Mixed-Valence States Probed by Soft-X-ray Spectroscopy

    Takaaki Suetsugu, Yuichi Shimazu, Takashi Tsuchiya, Masaki Kobayashi, Enju Sakai, Hiroshi Kumigashira, Tohru Higuchi

    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN   84 ( 6 )  2015.06  [Refereed]

    DOI

  • Electronic structure of Ti

    Usui Katsuya, Yamaguchi Shohei, Suzuki Naoya, Shimazu Yuichi, Tsuchiya Takashi, Sakai Enju, Kobayashi Masaki, Horiba Koji, Kumigashira Hiroshi, Higuchi Tohru

    Jpn. J. Appl. Phys.   54 ( 6 ) 06FJ07  2015.04

    　View Summary

    The physical properties and electronic structure of c-axis-oriented Ti<inf>1−</inf><inf>x</inf>Fe<inf>x</inf>O<inf>2−δ</inf>thin films have been studied by soft X-ray spectroscopy. The c-axis lattice constant increases with increasing Fe concentration. Fe ions have mixed valence states of Fe2+and Fe3+with a high-spin configuration. The intensity of the unoccupied Ti 3d state decreases and that of the occupied Ti 3d state increases owing to oxygen vacancies with Fe substitution. The electronic structure in the band gap region consists of Fe 3d and Ti 3d states, which correspond to the remnant of the lower Hubbard hand. The density of states (DOS) at the Fermi level, which is closely related to electrical conductivity, is composed of the Ti 3d state. The electrical conductivity of heavily doped Ti<inf>1−</inf><inf>x</inf>Fe<inf>x</inf>O<inf>2−δ</inf>thin films decreases owing to the electron correlation of Ti 3d electrons.

    DOI CiNii

  • In Situ and Nonvolatile Photoluminescence Tuning and Nanodomain Writing Demonstrated by All-Solid-State Devices Based on Graphene Oxide

    Takashi Tsuchiya, Tohru Tsuruoka, Kazuya Terabe, Masakazu Aono

    ACS Nano   9 ( 2 ) 2102 - 2110  2015.02  [Refereed]

    Authorship：Lead author, Corresponding author

    DOI

  • Hole-ion Mixed Conduction of Orientation-Controlled BaPrO3-delta Thin Film with Mixed Valence States

    Higuchi, Tohru, Oda, Asuka, Tsuchiya, Takashi, Suetsugu, Takaaki, Suzuki, Naoya, Yamaguchi, Shohei, Minohara, Makoto, Kobayashi, Masaki, Horiba, Koji, Kumigashira, Hiroshi

    Journal of the Physical Society of Japan   84 ( 11 )  2015  [Refereed]

    DOI

  • Micro x-ray photoemission and Raman spectroscopic studies on bandgap tuning of graphene oxide achieved by solid state ionics device

    Takashi Tsuchiya, Kazuya Terabe, Masakazu Aono

    Applied Physics Letters   105 ( 18 ) 183101 - 183101  2014.11  [Refereed]

    Authorship：Lead author, Corresponding author

    DOI

  • In-Situ Monitoring of Oxide Ion Induced Breakdown in Amorphous Tantalum Oxide Thin Film Using Acoustic Emission Measurement

    Takashi Tsuchiya, Kaita Ito, Shogo Miyoshi, Manabu Enoki, Shu Yamaguchi

    MATERIALS TRANSACTIONS   55 ( 10 ) 1553 - 1556  2014.10  [Refereed]

    Authorship：Lead author, Corresponding author

    DOI

  • Percolation conductivity in BaZrO3-BaFeO3 solid solutions

    Dongyoung Kim, Shogo Miyoshi, Takashi Tsuchiya, Shu Yamaguchi

    SOLID STATE IONICS   262   875 - 878  2014.09  [Refereed]

    DOI

  • The effect of local structure on ionic conductivity of apatite-type La9.5Si6O26.25

    Wei Liu, Takashi Tsuchiya, Shogo Miyoshi, Shu Yamaguchi, Kiyoshi Kobayashi, Wei Pan

    JOURNAL OF POWER SOURCES   248 ( NA ) 685 - 689  2014.02  [Refereed]

    DOI

  • In Situ and Non-Volatile Bandgap Tuning of Multilayer Graphene Oxide in an All-Solid-State Electric Double-Layer Transistor

    Takashi Tsuchiya, Kazuya Terabe, Masakazu Aono

    Advanced Materials   26 ( 7 ) 1087 - 1091  2014.02  [Refereed]

    Authorship：Lead author, Corresponding author

    DOI

  • Electronic Defect Formation in Fe-Doped BaZrO3 Studied by X-Ray Absorption Spectroscopy

    Dong-Young Kim, Shogo Miyoshi, Takashi Tsuchiya, Shu Yamaguchi

    CHEMISTRY OF MATERIALS   26 ( 2 ) 927 - 934  2014.01  [Refereed]

    DOI

  • Direct observation of redox state modulation at carbon/amorphous tantalum oxide thin film hetero-interface probed by means of in situ hard X-ray photoemission spectroscopy

    Takashi Tsuchiya, Shogo Miyoshi, Yoshiyuki Yamashita, Hideki Yoshikawa, Kazuya Terabe, Keisuke Kobayashi, Shu Yamaguchi

    Solid State Ionics   253   110 - 118  2013.12  [Refereed]

    Authorship：Lead author, Corresponding author

    DOI

  • Sol-gel synthesis and ionic conductivity of oxyapatite-type La9.33+xSi6O26+1.5x

    Wei Liu, Shu Yamaguchi, Takashi Tsuchiya, Shogo Miyoshi, Kiyoshi Kobayashi, Wei Pan

    JOURNAL OF POWER SOURCES   235 ( NA ) 62 - 66  2013.08  [Refereed]

    DOI

  • All-solid-state electric-double-layer transistor based on oxide ion migration in Gd-doped CeO2 on SrTiO3 single crystal

    Takashi Tsuchiya, Kazuya Terabe, Masakazu Aono

    APPLIED PHYSICS LETTERS   103 ( 7 ) NA  2013.08  [Refereed]

    DOI

  • Room temperature redox reaction by oxide ion migration at carbon/Gd-doped CeO2heterointerface probed by anin situhard x-ray photoemission and soft x-ray absorption spectroscopies

    Takashi Tsuchiya, Shogo Miyoshi, Yoshiyuki Yamashita, Hideki Yoshikawa, Kazuya Terabe, Keisuke Kobayashi, Shu Yamaguchi

    Science and Technology of Advanced Materials   14 ( 4 ) 045001 - 045001  2013.03  [Refereed]

    Authorship：Lead author, Corresponding author

    DOI

  • Improved Sintering Property of Y-doped BaZrO3 by Mn addition

    Dongyoung Kim, Shogo Miyoshi, Takashi Tsuchiya, Shu Yamaguchi

    HIGH TEMPERATURE CORROSION AND MATERIALS CHEMISTRY 10   50 ( 44 ) 17 - 27  2013  [Refereed]

    DOI

  • Defect Chemistry and Electrochemical Properties of BaZrO3 Heavily Doped with Fe

    Dong Young Kim, Shogo Miyoshi, Takashi Tsuchiya, Shu Yamaguchi

    IONIC AND MIXED CONDUCTING CERAMICS 8   45 ( 1 ) 161 - 170  2012  [Refereed]

    DOI

  • X-Ray absorption, photoemission spectroscopy, and Raman scattering analysis of amorphous tantalum oxide with a large extent of oxygen nonstoichiometry

    Takashi Tsuchiya, Hideto Imai, Shogo Miyoshi, Per-Anders Glans, Jinghua Guo, Shu Yamaguchi

    Physical Chemistry Chemical Physics   13 ( 38 ) 17013 - 17013  2011  [Refereed]  [International journal]

    Authorship：Lead author, Corresponding author

    DOI PubMed

  • Numerical Simulation of Switching Behavior in Cu/Cu2S Nanometer-Scale Switch

    Yoshinao Okajima, Yasushi Shibuta, Takashi Tsuchiya, Shu Yamaguchi, Toshio Suzuki

    APPLIED PHYSICS EXPRESS   3 ( 6 )  2010  [Refereed]

    DOI

  • Nonstoichiometry-Induced Carrier Modification in Gapless Type Atomic Switch Device Using Cu2S Mixed Conductor

    Takashi Tsuchiya, Yukiko Oyama, Shogo Miyoshi, Shu Yamaguchi

    Applied Physics Express   2 ( 5 ) 055002 - 055002  2009.04  [Refereed]

    Authorship：Lead author, Corresponding author

    DOI CiNii

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Research Projects

  • 超高速動作イオントロニクスの創成

    科学技術振興機構  戦略的な研究開発の推進 戦略的創造研究推進事業 さきがけ

    Project Year :

    2023
    -
    2026
     

    土屋 敬志

    　View Summary

    本研究ではイオントロニクスデバイスの動作速度を決定する電気二重層の応答について、デバイスを構成する電解質やチャネル材料、電極の諸特性、界面、デバイス構造などに着目して飛躍的な高速化を図るとともに、高速動作を合理的に説明する新しい電気化学モデルを考案し、様々なナノマテリアルを用いて超高速動作イオントロニクスを実現するための学術基盤を構築する。

  • Development of artificial neural circuits based on solid-state ionics

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research

    Project Year :

    2021.04
    -
    2024.03
     

  • Development of physical property tuning devices based on solid state ionics and investigation of the interface functions

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)

    Project Year :

    2022.04
    -
    2024.03
     

  • 固体イオニクス現象を利用する物性制御デバイスの開発と動作機構の解明

    日本学術振興会  科学研究費助成事業 新学術領域研究(研究領域提案型)

    Project Year :

    2020.04
    -
    2022.03
     

    土屋 敬志

    　View Summary

    本研究の目的は、電子材料(電極)/固体電解質界面近傍における電気二重層効果と酸化還元反応、及びそれらの共存・相互作用の結果として生じる電荷キャリアー(イオン・電子)蓄積現象(固体イオニクス現象)を詳細に調査し、飛躍的に高い密度の電荷キャリアー蓄積能を固固界面で発現させること、それを利用して応用価値の高い電子物性を劇的に変調する新機能デバイスを創製することである。今年度は水素終端ダイヤモンドと種々のリチウムイオン電解質薄膜を組み合わせたトランジスタを作成し、ホール測定等を行うことによって固体電解質界面の電気二重層効果について調査した。その結果、電気二重層効果の有無について顕著な材料依存性を有することが判明し、チタンを含む材料系では電気二重層効果によるキャリアー蓄積がほぼ完全に抑制されることを見出した。また、電気二重層効果が顕著なリチウム固体電解質で作成したトランジスタについて電荷キャリアーの充放電ダイナミクスの調査を行った所、ミリ秒程度の比較的速い応答が観察された。さらにこうした応答の温度依存性を調査して得られた活性化エネルギーは、リチウム電解質の伝導度に認められる活性化エネルギーとほぼ一致することを確かめた。また、今年度は磁気異方性制御デバイスについて、昨年度成功していた面内異方性でなく応用上より有利な垂直磁気異方性に着目して検討を行った。NiCo2O4薄膜へのプロトン挿入に伴う酸化還元反応を利用するトランジスタによってNiCo2O4の異方性磁界を約5%の幅で制御できることを見出した。これらを取りまとめて原著論文として出版するとともに，プレスリリースや口頭発表も行った。

  • Analysis of electric double layer at solid/solid electrolyte interfaces

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research

    Project Year :

    2019.04
    -
    2022.03
     

    TSUCHIYA Takashi

    　View Summary

    The electric double layer (EDL) effect at solid electrolyte/electrode interfaces has been attracting attention for energy and nanoelectronics applications. However, characteristic of the EDL effect for solid electrolyte is not clear and its characterization remains difficult in comparison with liquid electrolytes.In this study, we used a novel method to investigate the EDL effect and found that the EDL effect, and its suppression at solid electrolyte/electronic material interfaces, can be characterized on the basis of the electric conduction characteristics of H-diamond-based EDL transistors(EDLTs). Whereas H-diamond-based EDLT with a Li-Si-Zr-O Li+ solid electrolyte showed EDL-induced hole density modulation, EDLT with a Li-La-Ti-O (LLTO) Li+ solid electrolyte showed negligible enhancement, which indicates strong suppression of the EDL effect. Such suppression is attributed to charge neutralization in the LLTO, which is due to variation in the valence state of the Ti ions present.

  • Development of nanoionics-based nonvolatile memory using field effect transistor structure

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research Grant-in-Aid for Young Scientists (B)

    Project Year :

    2016.04
    -
    2018.03
     

    TSUCHIYA Takashi, TERABE Kazuya, HIGUCHI Tohru

    　View Summary

    Resistive random access memory devices with field effect transistor structure were fabricated to improve operation performance and to derive novel functions related to nanoionic phenomena. H+ and electron mixed conducting WO3-based redox transistor showed reversible resistance switching due to H+ insertion/desertion. Furthermore, it showed nonvolatile and characteristic resistance switching which can be applied to develop novel neuromorphic device. SrVO3-based redox transistors were fabricated by using H+ or Li+ conducting solid electrolytes. Although similar electronic carrier doping behavior due to the monovalent cation was expected, the two devices showed completely different electronic conduction characteristic. While the H+ device showed relatively large drain current enhancement (9%), the Li+ device showed very small one (0.2%). The result indicated that used H+ or Li+ gives different effect on the local environment near V4+ ions (V-O-V angle).

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Misc

  • さまざまな固体電解質/固体界面機能を利用するナノイオニクスデバイス

    土屋 敬志, 並木 航, 鶴岡 徹, 寺部 一弥

    固体物理 / アグネ技術センター [編]   57 ( 12 ) 793 - 807  2022.12

  • New frontier of nano-ionics research

    Electrochemistry   79 ( 4 ) 261 - 266  2011.04  [Invited]

    Article, review, commentary, editorial, etc. (scientific journal)  

    DOI CiNii

  • 磁気で動作する電気二重層トランジスタ

    土屋敬志, 井村将隆, 小出康夫, 寺部一弥

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   65th   ROMBUNNO.20p‐C102‐9  2018.03

    J-GLOBAL

  • HX-PES法,AE法,全反射率法を用いたCu2Sにおける不定比性変化のin-situ観察

    土屋敬志, 三好正悟, 尾山由紀子, 山下良之, 寺部一弥, 小林啓介, 榎学, 山口周

    電気化学会大会講演要旨集   77th  2010

    J-GLOBAL

  • Cu2Sを用いたギャップレス型原子スイッチのアコースティックエミッション測定

    土屋敬志, 三好正悟, 尾山由紀子, 榎学, 山口周

    電気化学会大会講演要旨集   76th  2009

    J-GLOBAL

  • HX-PES法及びAE法によるCu2Sにおける不定比性変化のin-situ観察

    土屋敬志, 三好正悟, 尾山由紀子, 山下良之, 寺部一弥, 小林啓介, 榎学, 山口周

    固体イオニクス討論会講演要旨集   35th  2009

    J-GLOBAL

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Syllabus

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