Updated on 2024/12/21

写真a

 
OZAKI, Hajime
 
Affiliation
Faculty of Science and Engineering
Job title
Professor Emeritus
Degree
Doctor of Engineering ( Waseda University )
Master of Engineering ( Waseda University )
博士(工学) ( 早稲田大学 )
Homepage URL
http://www.ozaki.sci.waseda.ac.jp

Research Experience

  • 1977
    -
    1978

    シカゴ大学 研究員

  • 1977
    -
    1978

    Chicago University, Research Associate

  • 1975
    -
    　

    - 早稲田大学 教授

  • 1975
    -
    　

    - Waseda University, Professor

  • 1969
    -
    1975

    Waseda University

  • 1969
    -
    1975

    Waseda University, Associate Professor

  • 1967
    -
    1969

    Waseda University

  • 1967
    -
    1969

    Waseda University, Assistant Professor

  • 1964
    -
    1967

    Waseda University

  • 1964
    -
    1967

    Waseda University, Research Assistant

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Education Background

  • 　
    -
    1967

    Waseda University  

  • 　
    -
    1967

    Waseda University   Graduate School, Division of Science and Engineering  

  • 　
    -
    1962

    Waseda University  

  • 　
    -
    1962

    Waseda University   Others  

Committee Memberships

  • 2001
    -
    2002

    日本学生航空連盟 理事 2001 － 2002

  • 1997
    -
    2002

    日本学術振興会 未来開拓学術研究推進事業委員会 理工部会委員 1997 － 2002

  • 2000
    -
    2001

    日本育英会 奨学事業運営協議会委員 2000 － 2001

  • 1989
    -
    1991

    文部省学術審議会 専門委員 1989 － 1991

Professional Memberships

  • 　
    　
    　

    電気学会

  • 　
    　
    　

    応用物理学会

  • 　
    　
    　

    日本物理学会

Research Areas

  • Electric and electronic materials

Research Interests

  • 超伝導体

  • 半導体

  • 低次元系

  • 電子物性

  • 超伝導体など）

  • 絶縁体

  • 有機物

  • 超誘電体

  • 磁性体

  • 誘電体

  • 電気・電子材料（半導体

  • Cryogenics)

  • Metal Physics

  • Solid-State Physics II (Magnetism

  • Semiconductor & Dielectrics)

  • Solid-State Physics I (Optical Properties

▼display all

 

Research Projects

  • マグネタイト系の熱電的性質

    Project Year :

    2002
    -
    　
     

  • β-FeSi2の熱電的性質

    Project Year :

    1998
    -
    　
     

  • Thermoelectric Properties of β-FeSi2

    Project Year :

    1998
    -
    　
     

  • 銅酸化物超伝導体の電子物性

    Project Year :

    1989
    -
    　
     

  • Electronic Properties of cuprate Superconductors

    Project Year :

    1989
    -
    　
     

  • 層状構造物質の電荷密度波の電子状態

    Project Year :

    1980
    -
    　
     

  • Electronic States of Charge Density Wave States in Layered Structure Materials

    Project Year :

    1980
    -
    　
     

  • 磁性半導体

  • 層状構造物質の電子物性

  • 高温超伝導体の電子物性

  • 熱電半導体

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Misc

  • Fe置換VO2の熱電特性

    金倉満, 及川靖, 田村敬, 申宰秀, 尾崎肇

    第52回応用物理学関係連合講演会／応用物理学会   31pA4  2005

  • 揺らぎ伝導率解析によるBi2Sr2(Ca1-xYx)Cu2O8+δ超伝導単結晶の特性評価

    青木辰徳, 及川靖, 金倉満, 田村敬, 尾崎肇, 森夏樹

    日本物理学会講演概要集2005年春季大会／日本物理学会   24pWA-11  2005

  • 揺らぎ伝導率解析によるBi2Sr2(Ca1-xYx)Cu2O8+δ超伝導単結晶の特性評価Ⅱ

    青木辰徳, 及川靖, 金倉満, 田村敬, 尾崎肇, 森夏樹

    日本物理学会講演概要集2005年秋季大会／日本物理学会   20aXD-12  2005

  • Electronic Structure of VO2 near Phase Transition by Tunneling Spectroscopy

    Changman Kim, Yasushi Oikawa, Takashi Tamura, Jae-Soo Shin, Hajime Ozaki

    2005 MRS Fall Meeting   V6-15  2005

  • Electronic Structure of VO2 near Phase Transition by Tunneling Spectroscopy

    Changman Kim, Yasushi Oikawa, Takashi Tamura, Jae-Soo Shin, Hajime Ozaki

    2005 MRS Fall Meeting   V6-15  2005

  • Thermoelectric properties of sintered (MnyNi1-y) xFe3-xO4

    N. Koseki, K. Machida, K. Yamamoto, Y. Oikawa, C. Kim, H. Ozaki

    International Conference on Thermoelectrics, ICT, Proceedings   2005   49 - 52  2005

    　View Summary

    Effects of Mn-Ni co-substitution were investigated on the thermoelectric properties of sintered magnetite (Fe3O4). Following the previous study, investigations were focused on the x dependence for 0 ≤ x ≤ 0.4 with y = 2/3, and y dependence for 0 ≤, y ≤ 1 with x = 0.2, in (MnyNi1-y)xFe3-xO4. Thermoelectric power factor manifested a maximum near x = 0.2 and y = 2/3, exceeding that of magnetite, due to a remarkable behavior of electrical resistivity in the x and y dependences. This behavior was shown to originate from that of the mobility in the framework of analysis by small-polaron hopping model. In this model, the hopping energy was shown to change at the Néel temperature. © 2005 IEEE.

    DOI

  • Effect of Fe-Si mixed powder on beta-FeSi2 formation from Fe-Si mixture film by isothermal process in encapsulated space

    Y Oikawa, C Kim, H Ozaki

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   43 ( 10 ) 7217 - 7221  2004.10

    　View Summary

    The isothermal process in evacuated and sealed ampoule at 930degreesC for 20h for synthesizing beta-FeSi2 was investigated using sputtered Fe-Si mixture film and Fe-Si mixed powder. It was found that the silicidation of the Fe-Si mixture film to beta-FeSi2 was activated by Si vapor, accompanied with Fe vapor, generated and transported from the mixed powder. By this isothermal process with appropriate condition for Fe-Si mixture film preparation, a uniform and continuous single-phase beta-FeSi2 film was synthesized.

    DOI CiNii

  • Effect of Fe-Si mixed powder on beta-FeSi2 formation from Fe-Si mixture film by isothermal process in encapsulated space

    Y Oikawa, C Kim, H Ozaki

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   43 ( 10 ) 7217 - 7221  2004.10

    　View Summary

    The isothermal process in evacuated and sealed ampoule at 930degreesC for 20h for synthesizing beta-FeSi2 was investigated using sputtered Fe-Si mixture film and Fe-Si mixed powder. It was found that the silicidation of the Fe-Si mixture film to beta-FeSi2 was activated by Si vapor, accompanied with Fe vapor, generated and transported from the mixed powder. By this isothermal process with appropriate condition for Fe-Si mixture film preparation, a uniform and continuous single-phase beta-FeSi2 film was synthesized.

    DOI CiNii

  • Effect of Crystallinity on Thermoelectric Properties in rf-Sputtered Beta-Fe1-xCoxSiy Films

    M. Sugita, Y. Oikawa, K. Kamata, C. Kim, H. Ozaki

    Proc. 23rd International Conference on Thermoelectrics   in press  2004

  • RFスパッタ法により作製したβ-Fe1-xCoxSi2膜の結晶性と熱電特性

    杉田将人, 及川靖, 鎌田康一郎, 金倉満, 尾崎肇

    第65回応用物理学関係連合講演会／応用物理学会   2p-ZN-5  2004

  • Thermoelectric Properties of Mn and Ni doped Magnetite

    N. Koseki, Y. Oikawa, C. Kim, H. Ozaki

    8th EUROPEAN WORKSHOP ON THERMOELECTRICS    2004

    DOI

  • Effect of Crystallinity on Thermoelectric Properties in rf-Sputtered Beta-Fe1-xCoxSiy Films

    M. Sugita, Y. Oikawa, K. Kamata, C. Kim, H. Ozaki

    Proc. 23rd International Conference on Thermoelectrics (in press)    2004

  • Thermoelectric Properties of Mn-Ni Substituted Magnetite

    Hajime Ozaki, Yoshihisa Nakada, Natsuteru Koseki, Akira Sato, Yasushi Oikawa, Kimitoshi Inoue, Yasunobu Beppu, Yukio Nakano, Akira Usami, Kazuyuki Tanaka

    IEEJ Transactions on Fundamentals and Materials   124 ( 4 ) 319 - 320  2004

    　View Summary

    The thermoelectric properties of Mn and Ni substituted sintered magnetite (Mn2/3Ni1/3)xFe3-xO4 were investigated for x=0, 0.4, 0.8 and 1.2 in the temperature range 100–700°C. It was found that the grain boundary didn't affect the electrical conduction notably in this material. The thermoelectric power factor increased with increasing the temperature for each x, and marked a maximum value of 1.31 µW/K2cm for x=0.4 at 700°C. © 2004, The Institute of Electrical Engineers of Japan. All rights reserved.

    DOI CiNii

  • Thermoelectric Properties of Mn and Ni doped Magnetite

    N. Koseki, Y. Oikawa, C. Kim, H. Ozaki

    8th EUROPEAN WORKSHOP ON THERMOELECTRICS    2004

    DOI

  • Effect of Crystallinity on Thermoelectric Properties in rf-Sputtered Beta-Fe1-xCoxSiy Films

    M. Sugita, Y. Oikawa, K. Kamata, C. Kim, H. Ozaki

    Proc. 23rd International Conference on Thermoelectrics   in press  2004

  • Co-dot-array formation along scratches on Si(111) surface by electroless deposition

    C Kim, Y Oikawa, J Shin, H Ozaki

    MICROELECTRONICS JOURNAL   34 ( 5-8 ) 607 - 609  2003.05

    　View Summary

    Co-dot-array formation is investigated along scratches on n-Si(1 1 1) surface in the aqueous solution of NH4F and CoSO(4)(.)7H(2)O. It was found that removal of oxygen from the solution by Ar-sparge on the surface of aqueous solution is effective for the formation of Co-dot-array. Some increase in the concentration of NH4F in the solution also tended to form the dot-array. The condition on the scratch for the formation of Co-dot-array is still left to be investigated. (C) 2003 Elsevier Science Ltd. All rights reserved.

    DOI

  • A tunneling spectroscopy study of the temperature dependence of the forbidden band in Bi2Te3 and Sb2Te3

    V. A. Kul’bachinskii, H. Ozaki, Y. Miyahara, K. Funagai

    JETP   97 ( 6 ) 1212 - 1218  2003

    DOI

  • Mn, Ni 置換マグネタイトの熱電特性

    小関夏輝, 佐藤哲, 中田賀久, 及川靖, 尾崎肇

    第64回応用物理学関係連合講演会／応用物理学会   31a-YF-11  2003

  • A tunneling spectroscopy study of the temperature dependence of the forbidden band in Bi2Te3 and Sb2Te3

    V. A. Kul’bachinskii, H. Ozaki, Y. Miyahara, K. Funagai

    JETP   97   1212 - 1218  2003

    DOI

  • Effects of Mn and/or Ni substitutions for Fe on thermoelectric properties of magnetite prepared by sintering

    Y Nakada, N Koseki, A Sato, Y Oikawa, H Ozaki, K Inoue, Y Beppu, Y Nakano, A Usami, K Tanaka

    TWENTY-SECOND INTERNATIONAL CONFERENCE ON THERMOELECTRICS, PROCEEDINGS ICT '03     231 - 234  2003

    　View Summary

    Effects of Mn and/or Ni substitutions for Fe were investigated on thermoelectric properties in sintered magnetite (Fe3O4) for temperature range 200-700degreesC. Substitutions were performed in 4 series; (1) MnxFe3-xO4 (0less than or equal toxless than or equal to0.8), (2) NixFe3-xO4 (0less than or equal toxless than or equal to0.8), (3) (Mn1/2Ni1/2)(x)Fe3-xO4 (0less than or equal toxless than or equal to1.2) and (4) (Mn2/3Ni1/3).Fe3-xO4 (0less than or equal to1.2). The values of electrical resistivity (p) and Seebeck coefficient (S) for series (1) and (2) were found to be similar to the previously reported results for magnetite single crystal. Common to the 4 series, p slightly decreased with temperature, and S and thermoelectric power factor S-2/p increased with temperature. For series (4) with x=0.4, there was a case the thermoelectric power factor exceeded that of magnetite.

    DOI

  • Effect of ar plasma distribution in RF-magnetron-sputtering on crystallinity and thermoelectric properties of FeSi2+x films

    K Kamata, H Anzai, M Sugita, Y Oikawa, H Ozaki

    TWENTY-SECOND INTERNATIONAL CONFERENCE ON THERMOELECTRICS, PROCEEDINGS ICT '03     391 - 394  2003

    　View Summary

    Thermoelectric properties of FeSi2+x, prepared by RF magnetron sputtering were studied in the temperature range 470K-820K. Ar plasma distribution and the composition ratio Si/Fe were changed to investigate the condition, which yields high thermoelectric properties. It was found that the crystallinity and the thermoelectric properties improved remarkably by a higher in-plane component of magnetic field on the target surface. It was also found that the composition ratio Si/Fesimilar or equal to2.2 in the film yielded the best thermoelectric properties and it corresponded to the best crystallinity of single beta-FeSi2 phase.

    DOI

  • A tunneling spectroscopy study of the temperature dependence of the forbidden band in Bi2Te3 and Sb2Te3

    V. A. Kul’bachinskii, H. Ozaki, Y. Miyahara, K. Funagai

    JETP   97 ( 6 ) 1212 - 1218  2003

    DOI

  • Direct formation of β-FeSi2 in evacuated fused ampoule

    Yasushi Oikawa, Hajime Ozaki

    Intermetallics   10 ( 4 ) 391 - 397  2002.04

    　View Summary

    A simple preparation method for β-FeSi2 was proposed to activate the interfacial reaction between Fe powder and Si powder through a heat process in a sealed ampoule. The mechanism of the reaction process was investigated by using sputtered Fe films on Si substrates and sapphire substrates. It was found that Si vapor in the ampoule reacts with solid Fe and is saturated to form ε-FeSi. Once ε-FeSi is formed, it initiates the reaction with solid Si to form β-FeSi2. © 2002 Elsevier Science Ltd. All rights reserved.

    DOI CiNii

  • Direct formation of β-FeSi2 in evacuated fused ampoule

    Yasushi Oikawa, Hajime Ozaki

    Intermetallics   10 ( 4 ) 391 - 397  2002.04

    　View Summary

    A simple preparation method for β-FeSi2 was proposed to activate the interfacial reaction between Fe powder and Si powder through a heat process in a sealed ampoule. The mechanism of the reaction process was investigated by using sputtered Fe films on Si substrates and sapphire substrates. It was found that Si vapor in the ampoule reacts with solid Fe and is saturated to form ε-FeSi. Once ε-FeSi is formed, it initiates the reaction with solid Si to form β-FeSi2. © 2002 Elsevier Science Ltd. All rights reserved.

    DOI CiNii

  • Ni dot array formation on scratches of Si(111) by electroless deposition

    C Kim, Y Oikawa, J Shin, H Ozaki

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS   41 ( 2B ) L178 - L179  2002.02

    　View Summary

    Arrays of Ni dots with well defined size and interspace of 10 nm order were deposited by the electroless reaction in the NiSO4.6H(2)O aqueous solution, along the scratches formed on n-Si(111) surface. The mechanism of the alignment of Ni dots are discussed in terms of a mobility of the dots and the repulsive force acting between them.

    DOI CiNii

  • 真空封入下でのFeとSiの混合粉末とFeスパッタ膜によるβ-FeSi2の作製

    及川靖, 金倉満, 尾崎肇

    第49回応用物理学関連連合講演会予稿集/応用物理学会   30a-P11-19  2002

  • Charge-Density-Wave Domain Originated Altshuler-Aronov-Spivak Effect in 1T-TaS2 Single Crystal

    T.Isa, M.Sasaki, G.R.Wu, Y.Isobe, W.X.Gao, H.Ozaki

    Phys. stat. sol.   229 ( 3 ) 1111 - 1120  2002

    DOI

  • 真空封入下でのFeとSiの混合スパッタ膜に対する直接合成法の効果

    及川靖, 金倉満, 尾崎肇

    第63回応用物理学会学術講演会予稿集   26p-ZC-10  2002

  • 熱起電力による1T-Ta1-xTixS2のCDWへのTi置換効果

    渡辺陽介, 及川靖, 坂東弘之, 尾崎肇

    日本物理学会講演概要集2002年秋の分科会   6aPS-188  2002

  • Angle Resolved Tunneling Spectroscopic Study of the Anisotropy of Pseudogap in Bi2212 Cuprate Superconductors

    T.Ogino, M.Mitugi, S.Ueda, Y.Nakada, Y.Oikawa, H.Ozaki, Y.Miyahara, H.Enomoto

    10th International Ceramic Congress & 3rd Forum on New Materials   SⅢ-2:P-11  2002

  • Thermoelectric Properties of Mixed layered Compounds TiS2-xSex(0≤x≤2)

    Y.Hirota, K.Ichiyama, N.Hosoi, Y.Oikawa, V.A.Kulbachinskii, H.Ozaki

    Proc. 21st International Conference on Thermoelectrics     159 - 162  2002

    DOI

  • Direct formation of beta-FeSi2 on substrate in evacuated sealed ampoule

    Y Oikawa, C Kim, H Ozaki

    XXI INTERNATIONAL CONFERENCE ON THERMOELECTRICS, PROCEEDINGS ICT '02     110 - 113  2002

    　View Summary

    A simple preparation method of beta-FeSi2 on substrate was proposed by the isothermal heat treatment in an evacuated and sealed ampoule. The mechanism of this reaction process was investigated using Compacted Si powder or mixed powder of Fe and Si and sputtered Fe films on Si substrates or sapphire substrates. The compacted powder was encapsulated in an ampoule and separated from substrate with sputtered Fe film. It was found that vaporized Si from Si powder reacted with Fe film to form epsilon-FeSi, which, in turn, initiated the reaction with Si substrate to form beta-FeSi2 film. Furthermore, it was found that vaporized Fe, derived from mixed powder of Fe and Si, promoted the formation of beta-FeSi2 single phase on thermally oxidized Si substrate.

    DOI

  • Direct formation of β-FeSi2 in evacuated fused ampoule

    Y.Oikawa, anf, H.Ozaki

    Intermetallics   10 ( 4 ) 391 - 397  2002

    DOI CiNii

  • Charge-Density-Wave Domain Originated Altshuler-Aronov-Spivak Effect in 1T-TaS2 Single Crystal

    T.Isa, M.Sasaki, G.R.Wu, Y.Isobe, W.X.Gao, H.Ozaki

    Phys. stat. sol.   229 ( 3 ) 1111 - 1120  2002

    DOI

  • Angle Resolved Tunneling Spectroscopic Study of the Anisotropy of Pseudogap in Bi2212 Cuprate Superconductors

    T.Ogino, M.Mitugi, S.Ueda, Y.Nakada, Y.Oikawa, H.Ozaki, Y.Miyahara, H.Enomoto

    10th International Ceramic Congress & 3rd Forum on New Materials   SⅢ-2:P-11  2002

  • Thermoelectric Properties of Mixed layered Compounds TiS2-xSex(0≤x≤2)

    Y.Hirota, K.Ichiyama, N.Hosoi, Y.Oikawa, V.A.Kulbachinskii, H.Ozaki

    Proc. 21st International Conference on Thermoelectrics     159 - 162  2002

    DOI

  • Direct formation of beta-FeSi2 on substrate in evacuated sealed ampoule

    Y Oikawa, C Kim, H Ozaki

    XXI INTERNATIONAL CONFERENCE ON THERMOELECTRICS, PROCEEDINGS ICT '02     110 - 113  2002

    　View Summary

    A simple preparation method of beta-FeSi2 on substrate was proposed by the isothermal heat treatment in an evacuated and sealed ampoule. The mechanism of this reaction process was investigated using Compacted Si powder or mixed powder of Fe and Si and sputtered Fe films on Si substrates or sapphire substrates. The compacted powder was encapsulated in an ampoule and separated from substrate with sputtered Fe film. It was found that vaporized Si from Si powder reacted with Fe film to form epsilon-FeSi, which, in turn, initiated the reaction with Si substrate to form beta-FeSi2 film. Furthermore, it was found that vaporized Fe, derived from mixed powder of Fe and Si, promoted the formation of beta-FeSi2 single phase on thermally oxidized Si substrate.

    DOI

  • 電気化学手法によるSi(111)表面のスクラッチへのNiドット・アレイ形成

    金 倉満, 及川靖, 申宰秀, 尾崎肇

    第48回応用物理学関連連合講演会/応用物理学会   30a-ZX-7  2001

  • 化学輸送法により作製したβ-FeSi2単結晶の伝導機構

    勝田喬雄, 竹内史朗, 笹川洋志, 及川靖, 尾崎肇

    第48回応用物理学関係連合講演会予稿集/応用物理学会   28p-G-13  2001

  • TiSe2-xSx系CDW状態の熱起電力測定

    廣田裕介, 一山清隆, 細井直樹, 宮原陽一, 尾崎肇

    日本物理学会2001年秋の分科会講演概要集/日本物理学会   19aYB-11  2001

  • 電気化学手法によりSi(111)表面スクラッチに形成したNiドット・アレイのMFMによる評価

    金倉満, 及川靖, 申宰秀, 本間敬之, 尾崎肇

    日本物理学会2001年秋の分科会講演概要集/日本物理学会   19aWD-13  2001

  • 真空封入下でのSi粉末とFeスパッタ膜によるβ-FeSi2の作製

    及川靖, 尾崎肇

    第62回応用物理学会学術講演会/応用物理学会   12a-YA-11  2001

  • Computer Simulations of Charge Transpport in Dye-Sensitized Nanocrystalline Photovoltaic Cells

    A.Usami, H.Ozaki

    J. Phys. Chem. B   105 ( 20 ) 4577 - 4583  2001

    DOI CiNii

  • Computer Simulations of Charge Transpport in Dye-Sensitized Nanocrystalline Photovoltaic Cells

    A.Usami, H.Ozaki

    J. Phys. Chem. B   105 ( 20 ) 4577 - 4583  2001

    DOI CiNii

  • 1T-TiSe2の角度分解光電子分光・CDWの起源

    藤澤秀樹, 柳沼晋, 高橋隆, 尾崎肇

    日本物理学会2000年春の分科会   24p-ZH-8  2000

  • ＲＦスパッタによるβ-FeSi2薄膜作製における磁場の効果

    大小原啓介, 及川靖, 尾崎肇

    第47回応用物理学関係連合講演会   30p-T-6  2000

  • Li-Doped Bi系酸化物超伝導体whiskerに対する揺らぎ伝導率解析

    森夏樹, 榎本博行, 松原一郎, 尾崎肇

    第47回応用物理学関係連合講演会講演予稿集   30p-Q-8  2000

  • Bi-2223/Ag積層焼結体での揺らぎ伝導率と交流帯磁率

    森夏樹, 手塚勇, 吉沢秀治, 中根央, 尾崎肇

    第47回応用物理学関係連合講演会講演予稿集 / 応用物理学会   30p-Q-7  2000

  • 1T-TiSe2の角度分解型光電子分光

    藤原英樹, 組頭広志, H. Ding, 高橋隆, 宮原陽一, 尾崎肇

    日本物理学会講演概要集2000年秋の分科会／日本物理学会   23pTF-11  2000

  • Bi2Sr2CaCu2O8+δ単結晶のエネルギーギャップ面内異方性

    荻野崇, 三ツ木雅紀, 坂東弘之, 宮原陽一, 榎本博行, 尾崎肇

    日本物理学会講演概要集2000年秋の分科会／日本物理学会   25aSG-4  2000

  • 希薄磁性半導体Pb1-xEuxTeの電気的・磁気的性質

    大湾朝崇, 藤塚隆志, 渡辺信宏, 小泉健, 坂東弘之, 及川靖, 尾崎肇

    日本物理学会講演概要集2000年秋の分科会／日本物理学会   23pSB-5  2000

  • 揺らぎ伝導率解析によるYBCO薄膜に対する異方性の評価

    森夏樹, 尾崎肇

    第61回応用物理学会学術講演会講演予稿集   3p-ZL-16  2000

  • Li-Doped Bi系酸化物超伝導体whiskerに対する揺らぎ伝導率解析Ⅱ

    森夏樹, 榎本博行, 松原一郎, 尾崎肇

    第61回応用物理学会学術講演会講演予稿集   3p-ZL-15  2000

  • RFスパッタ法によるβ-FeSi2薄膜のターゲット依存性

    高野敏男, 安西英則, 及川靖, 尾崎肇

    第61回応用物理学会学術講演会講演予稿集   3a-R-5  2000

  • β-FeSi2単結晶のトンネル分光

    勝田喬雄, 一山清隆, 金坂義明, 笹川洋志, 及川靖, 尾崎肇

    第61回応用物理学会学術講演会講演予稿集   3a-R-4  2000

  • 真空封入によるβ-FeSi2単相粉体の直接合成

    及川靖, 尾崎肇

    第61回応用物理学会学術講演会講演予稿集   3a-R-3  2000

  • Angle-resolved tunneling spectroscopy of Si conduction band using bonded Si(111) wafer pair

    A. Kazama, H. Bando, Y. Miyahara, H. Enomoto, H. Ozaki

    Proc.25th Int.Conf.Phys.Semicond.   Part I   144 - 145  2000

  • The time-dependent process of oxidation of the surface of Bi2Te3 studied by x-ray photoelectron spectroscopy

    H.Bando, K.Koizumi, Y Oikawa, K.Daikohara, V A Kulbachinskii, H Ozaki

    J.Phys.Condens.Matter / Insti.of Phys.Pub.,UK   12 ( 26 ) 5607 - 5616  2000

    DOI CiNii

  • Effects of Ge doping on the fluctuative conductivity in Bi2Sr2CaCu2O8+δ

    Kota Asaka, Ken Koizumi, Hiroyuki Bando, Natsuki Mori, Hajime Ozaki

    Physica B: Condensed Matter   284-288 ( I ) 995 - 996  2000

    　View Summary

    The fluctuation conductivity in Bi2-xGexSr2CaCu2O 8+δ (0 ≤ x ≤ 0.15) single crystals prepared by the self-flux method was measured in order to investigate the effects of Ge doping on the superconducting properties. In the analysis of the fluctuation conductivity, we adopt the Aslamazov-Larkin and Lawrence-Doniach theories in which the short-wavelength cutoff in the fluctuation spectrum is taken into account, and find good agreement between theory and experiment. From the analysis, we deduce that the main effect of Ge doping is to increase the out-of-plane coherence length ζc and to decrease the in-plane coherence length ζab, consequently, reducing the anisotropy. © 2000 Elsevier Science B.V. All rights reserved.

    DOI

  • Paraconductivity analysis for superconducting Bi-Sr-Ca-Cu-O whiskers

    H.Enomoto, N. Mori, I.Matsubara, H.Ozaki

    Physica B / North Holland   284/288   579 - 580  2000

    DOI CiNii

  • Scanning tunneling microscopy of the charge-density wave in Hf-doped 1T-TaS2

    H.Bando, K.Koizumi, Y Miyahara, H Ozaki

    J.Phys.Condens.Matter / Insti.of Phys.Pub.,UK   12 ( 19 ) 4353 - 4363  2000

    DOI CiNii

  • Scanning tunneling microscopy of the charge-density wave in Hf-doped 1T-TaS2

    H.Bando, K.Koizumi, Y Miyahara, H Ozaki

    J.Phys.Condens.Matter / Insti.of Phys.Pub.,UK   12 ( 19 ) 4353 - 4363  2000

    DOI CiNii

  • The time-dependent process of oxidation of the surface of Bi2Te3 studied by x-ray photoelectron spectroscopy

    H.Bando, K.Koizumi, Y Oikawa, K.Daikohara, V A Kulbachinskii, H Ozaki

    J.Phys.Condens.Matter / Insti.of Phys.Pub.,UK   12 ( 26 ) 5607 - 5616  2000

    DOI CiNii

  • Effects of Ge doping on the fluctuative conductivity in Bi2Sr2CaCu2O8+δ

    Kota Asaka, Ken Koizumi, Hiroyuki Bando, Natsuki Mori, Hajime Ozaki

    Physica B: Condensed Matter   284-288 ( I ) 995 - 996  2000

    　View Summary

    The fluctuation conductivity in Bi2-xGexSr2CaCu2O 8+δ (0 ≤ x ≤ 0.15) single crystals prepared by the self-flux method was measured in order to investigate the effects of Ge doping on the superconducting properties. In the analysis of the fluctuation conductivity, we adopt the Aslamazov-Larkin and Lawrence-Doniach theories in which the short-wavelength cutoff in the fluctuation spectrum is taken into account, and find good agreement between theory and experiment. From the analysis, we deduce that the main effect of Ge doping is to increase the out-of-plane coherence length ζc and to decrease the in-plane coherence length ζab, consequently, reducing the anisotropy. © 2000 Elsevier Science B.V. All rights reserved.

    DOI

  • Paraconductivity analysis for superconducting Bi-Sr-Ca-Cu-O whiskers

    H.Enomoto, N. Mori, I.Matsubara, H.Ozaki

    Physica B / North Holland   284/288   579 - 580  2000

    DOI CiNii

  • Angle-resolved tunneling spectroscopy of Si conduction band using bonded Si(111) wafer pair

    A. Kazama, H. Bando, Y. Miyahara, H. Enomoto, H. Ozaki

    Proc.25th Int.Conf.Phys.Semicond.   Part I   144 - 145  2000

  • Angle-resolved tunneling study on the anisotropic gap of Bi-2212 superconducting whisker

    K Morikawa, H Enomoto, Matsubara, I, N Mori, H Ozaki

    APPLIED SURFACE SCIENCE   144-45   534 - 537  1999.04

    　View Summary

    A tunneling study was performed on the c-axis direction of the Bi-2212 superconducting whiskers with the superconducting transition temperature of 72 K. The contact junction method was adopted to fabricate the nanometer scale tunnel junction by using a native oxide barrier on the whisker surface. We carried out the angle-resolved tunneling measurements at 7.1 K by rotating the probe whisker over the sample whisker. We find that the superconducting gap energy of Bi-2212 superconductor is strongly dependent on the rotating angle, reflecting the d-wave symmetry of the Cooper pair wave function. (C) 1999 Elsevier Science B.V. All rights reserved.

    DOI CiNii

  • 貼り合わせSi(111) waferのトンネル分光II

    大井 謙一, 坂東 弘之, 宮原 陽一, 榎本 博行, 尾崎 肇

    日本物理学会講演概要集第54回年会／日本物理学会   31a-ZF-11  1999

  • トンネル分光によるBi系酸化物超伝導体2212相のNi置換効果

    吉松 尚紀, 小泉 健, 高野 良紀, 関沢 和子, 尾崎 肇

    日本物理学会講演概要集第54回年会／日本物理学会   31a-C-7  1999

  • 層状半導体Bi2Te3の表面酸化過程のXPS測定II

    坂東 弘之, 小泉 健, V.A. Kulbachinskii, 尾崎 肇

    日本物理学会講演概要集第54回年会／日本物理学会   29a-ZF-10  1999

  • TiSe2-xSxのCDW状態のトンネル分光II

    細井 直樹, 坂東 弘之, 宮原 陽一, 尾崎 肇

    日本物理学会講演概要集第54回年会／日本物理学会   29a-ZF-5  1999

  • XPS study of oxidation process on Bi2Te3 surface

    H. Bando, K. Koizumi, Y. Oikawa, K. Daikohara, V.A. Kulbachinskii, H. Ozaki

    Proc. 18th Inter. Conf. on Thermoelectrics   pp. 359-362  1999

  • Effect of Ge doping ｏｎ the fluctuation conductivity in Bi2Sr2CaCu2O8+δ

    K. Asaka, K. Koizumi, H. Bando, N. Mori, H. Ozaki

    Physica B   284-288  1999

  • Formation of Bi2212 Phase via Bi2201 Phase in Liquid-Phase Epitaxial Growth

    H. Enomoto, H. Yamanaka, N.S. Chang, J.S. Shin, H. Ozaki

    Jpn.J.Appl.Phys.   38, pp.L501-504  1999

    DOI

  • 電荷密度波物質TaS2の過渡熱起電力効果

    伊佐 隆志, 佐保井 貴広, 根岸 寛, 佐々木 実, 井上 正, 尾崎 肇

    日本物理学会講演概要集1998年年会／日本物理学会   1p-YJ-2  1998

  • 揺らぎ伝導率解析によるBi2-xGexSr2CaCu2O8+δ単結晶の特性評価

    浅香 航太, 小泉 健, 坂東 弘之, 森 夏樹, 尾崎 肇

    日本物理学会講演概要集1998年秋の分科会／日本物理学会   27a-YD-7  1998

  • 層状半導体Bi2Te3の表面酸化過程のXPS測定

    坂東 弘之, 小泉 健, V.A.Kulbachinskii, 尾崎 肇

    日本物理学会講演概要集1998年秋の分科会／日本物理学会   27a-YK-6  1998

  • 角度分解型トンネル分光によるBi系酸化物超伝導体2212相whiskerの超伝導ギャップの観測

    森川 幸一, 榎本 博行, 松原 一郎, 森 夏樹, 尾崎 肇

    日本物理学会講演概要集1998年秋の分科会／日本物理学会   26a-YF-4  1998

  • Sub-atomic positioning stage for molecular devices using a lattice reference method

    Y. Miyahara, T. Fujii, H. Bleuler, H. Bando, H. Ozaki

    PTB-Bericht／Braunschweig-Berlin   F-30, pp.165-171  1998

  • Tunneling spectroscopy of electronic structures of Bi2-xSnxTe3

    T. Nakura, H. Bando, H. Sasagawa, V.A. Kulbachinskii, H. Ozaki

    Proceedings of XVII International Conference on Thermoelectrics, IEEE   Proceedings ICT98, pp.141-144  1998

  • XPS study of layered oxysulfides (La1-xCaxO)Cu1-yNiyS (y = 0 and y = x)

    Y. Takano, K. Mori, K. Koizumi, H. Ozaki, K. Sekizawa

    Journal of Alloys and Compounds   275-277, pp.447-449  1998

    DOI

  • Single crystal growth of (LaO)CuS

    Y Takano, C Ogawa, Y Miyahara, H Ozaki, K Sekizawa

    JOURNAL OF ALLOYS AND COMPOUNDS   249 ( 1-2 ) 221 - 223  1997.03

    　View Summary

    Single crystals of (LaO)CuS with size 100x100x5 mu m(3) have been prepared by annealing of small crystals and polycrystalline powders of (LaO)CuS in iodine atmosphere at 1373 K. The iodine pressure at this temperature is about 5 atm. The present study indicates that there are optimum values both of iodine pressure and annealing temperature.

    DOI

  • TiSe2および1T-TaS2のCDW状態における角度分解型トンネル分光

    宮原 陽一, 坂東 弘之, 榎本 博行, 尾崎 肇

    日本物理学会1997年年会   30p-S-4  1997

  • CaサイトをY置換したBi系酸化物超伝導体2212相におけるSr,Ca相互置換効果IV

    古林 秀樹, 榎本 博行, 高野 良紀, 関沢 和子, 小泉 健, 尾崎 肇

    日本物理学会1997年年会／日本物理学会   29aK-8  1997

  • 液相成長法によるBi系酸化物超伝導体2212相の2201相からの生成過程II

    山中 博和, 榎本 博行, 張 年錫, 申 宰秀, 尾崎 肇

    日本物理学会1997年年会／日本物理学会   29aK-7  1997

  • 液相成長法によるBi系酸化物超伝導体2212相の2201相からの生成過程III

    榎本 博行, 張 年錫, 申 宰秀, 尾崎 肇

    日本物理学会講演概要集1997年秋の分科会／日本物理学会   6p-K-1  1997

  • 層状半導体Bi2-xSnxTe3のバンド端構造のトンネル分光

    奈倉 健, 坂東 弘之, V.A. Kulbachinskii, 舟貝 健一, 宮原 陽一, 尾崎 肇

    日本物理学会講演概要集1997年秋の分科会／日本物理学会   6p-E-11  1997

  • XPS study on layered oxysulfides (La1-xCaxO)Cu1-yNiyS (y=0 and y=x)

    3rd International Conference of f Elements   II/557/P  1997

  • Angle resolved tunneling between Si and Ge crystal surfaces

    H. Enomoto, Y. Miyahara, H. Ozaki

    9th Inter. Conf. on Scanning Tunneling Microscopy/Spectroscopy and Related Techniques   Th10.2p16  1997

  • Effect of Hf substitution on the NC-CDW state in 1T-TaS2

    H. Bando, Y. Miyahara, H. Ozaki

    9th Inter. Conf. on Scanning Tunneling Microscopy/Spectroscopy and Related Techniques   Mo11.1p01  1997

  • Scanning tunneling microscopy investigations of single-q charge density wave state in hafnium-doped tantalum disulfide

    H. Bando, Y. Miyahara, H. Enomoto, H. Ozaki

    Surface Science   381  1997

  • 遷移金属ダイカルコゲナイドの角度分解型トンネル分光

    宮原 陽一, 坂東 弘之, 尾崎 肇

    文部省科研費重点領域研究「個々の原子のトンネル物性」研究会    1996

  • トンネル分光による層状構造半導体Bi2Te3のバンド端構造の温度依存性

    舟貝 健一, 宮原 陽一, V.A. Kulbachinskii, 尾崎 肇

    日本物理学会講演概要集1996年秋の分科会／日本物理学会   4pB-15  1996

  • 1T-Ta1-xHfxS2のNC-CDW状態のSTM観察II

    坂東 弘之, 宮原 陽一, 榎本 博行, 尾崎 肇

    日本物理学会講演概要集1996年秋の分科会／日本物理学会   4pB-14  1996

  • 貼り合わせSi(111) waferのトネンル分光

    平田 清, 西森 久雄, 宮原 陽一, 坂東 弘之, 榎本 博行, 尾崎 肇

    日本物理学会講演概要集1996年秋の分科会／日本物理学会   3pB-15  1996

  • 貼り合わせSi(100) waferのトンネル分光

    西森 久雄, 平田 清, 宮原 陽一, 坂東 弘之, 榎本 博行, 尾崎 肇

    日本物理学会講演概要集1996年秋の分科会／日本物理学会   3pB-14  1996

  • CaサイトをY置換したBi系酸化物超伝導体2212相におけるSr,Ca相互置換効果III

    古林 秀樹, 榎本 博行, 高野 良紀, 関沢 和子, 小泉 健, 尾崎 肇

    日本物理学会1996年秋の分科会／日本物理学会   1pX-8  1996

  • トンネル分光による層状構造半導体Bi2Te3およびSb2Te3のバンド端構造

    舟貝 健一, 宮原 陽一, V.A. Kulbachinskii, 尾崎 肇

    日本物理学会講演概要集1996年年会／日本物理学会   3aF-9  1996

  • Observation of the CDW state at room temperature in Ta1-xHfxS2 by scanning tunneling microscopy

    H. Bando, Y. Miyahara, H. Enomoto, H. Ozaki

    The 4th International Colloquim on Scanning Tunneling Microscopy   P21  1996

  • Angle Resolved Tunneling Spectroscopy of the CDW States in TiSe2

    Y. Miyahara, H. Bando, H. Enomoto, H. Ozaki

    Fourth International Conference on Nanometer-scale Science & Technology   11-TuP36  1996

  • Tunnelling Spectroscopy investigation of the CDW state in TiSe2-xSx

    Y. Miyahara, H. Bando, H. Ozaki

    J. Phys. Cond. Matt.   8 ( 40 ) 7453 - 7461  1996

    DOI CiNii

  • Effect of the Bi2212 coexistence on the Bi2212 solidification in the LPE film

    H. Yamanaka, H. Enomoto, N.S. Chang, J.S. Shin, H. Ozaki

    Czechoslovak Journal of Physics   46;S3  1996

    DOI

  • On the Correlations between Sr:Ca Substitution and Structural Modulation in the Bi-2212 Phase

    Y. Oikawa, P.P. Saligan, K. Koizumi, H. Enomoto, Y. Takano, K. Sekizawa, E. Uchida, H. Ozaki

    Czechoslovak Journal of Physics   46;S3  1996

    DOI

  • XPS study on the site occupation of Sr,Ca and Y ions in Bi2212 superconductors

    H. Furubayashi, H. Enomoto, Y. Takano, K. Sekizawa, Y. Oikawa, H. Ozaki

    Czechoslovak Journal of Physics   46;S3  1996

    DOI

  • A tunneling study on the anisotropic gap of Bi2212 superconducting whisker

    H. Enomoto, H. Kokado, I. Matsubara, N. Mori, H. Ozaki

    Czechoslovak Journal of Physics   46;S3  1996

    DOI

  • Tc,onset, fluctuation and intergrain connection in tile Bi2xGcxSr2CaCu2028+δ

    P. P. Saligan, Y. Oikawa, K. Koizumi, N. Mori, H. Ozaki

    Czechoslovak Journal of Physics   46 ( 3 ) 1281 - 1282  1996

    　View Summary

    Resistive transitions in Bi2xGcxSr2CaCu2028+δ (x=0-0.3) prepared by the solid state reaction method were investigated. The Tc,onset'S of the as sintered pellets were approximately 74 K and 80 K for x=0 and x&gt
    0 respectively. To enhance intergrain connection, the sintered pellets were subsequently cold pressed then annealed. This increases the To,onset to approximately 87 K for all x and sharpens the resistive transition. Although the intergrain connection enhanced samples have almost the same To,onset independent of x, the superconducting fluctuation for x&gt
    0 starts at a much higher temperature compared to that of x=0. An analysis following the Aslamasov-Larkin theory suggests different behaviors in fluctuation dimensionalities between the Bi:Ge substituted and unsubstituted samples.

    DOI

  • Tunneling Study of the Valence Band Structure of Pb1-xEuxTe

    T. Syoji, Y. Miyahara, H. Ozaki

    Jpn. J. Appl. Phys./応用物理学欧文誌刊行会   35;4B  1996

    DOI

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Industrial Property Rights

  • 熱電材料及びその製造方法

    Patent

    　View Summary

    特開2003-282962

 

Internal Special Research Projects

  • 角度分解型トンネル分光法による結晶内電子状態の異方性の研究

    2000  

    　View Summary

    　電子のトンネル現象は、電子デバイスやエネルギー分光法として広く応用されているが、そこで考慮され、適用されているのは、専らトンネリングにおけるエネルギー選択則であった。1990年に筆者らは、結晶内電子のブロッホ状態間トンネリングにおける横方向波数保存則に注目し、結晶面間トンネリングの面内結晶間角度依存性から、結晶内電子状態の異方性を調べる測定法を提案し、層状構造物質に対して、モデル計算と測定結果を初めて報告した。　本研究ではこの手法が、電子状態の等エネルギー面が層状構造物質の場合のようにトンネリング方向にチューブ状になっていない、3次元性物質に対しても有効であることを示すと共に、光学測定などでは測定困難な波数空間の方位における電子の等エネルギー面の形状を測定することを目的として、Si（111）面間に対して角度分解型トンネリング測定を行い、Si伝導帯のいままで測定されていない波数領域におけるエネルギーの波数依存性を明らかにした。同時に、高濃度ドープn-Siのような小さなフェルミ面に対しても、この手法が有効である事が明らかにされた。この成果は、2000年９月に大阪で開催された第25回半導体物理国際会議で発表した。　さらに本研究では、この測定法を銅酸化高温超伝導のフェルミ面の異方性の研究に適用した。高温超伝導体Bi2Sr2CaCu2O8+δのフェルミ面の形状と超伝導ギャップの異方性は、高温超伝導の発現機構の解明とも関連して興味が持たれ、角度分解型光電子分光法により明らかにされつつあるが、本研究では角度分解型トンネル分光法により、超伝導転移温度以上の温度領域で観測される擬ギャップの異方性を初めて求めた。この結果は、2000年９月に新潟で開催された日本物理会で報告した。

  • 機能性酸化物材料開発の基礎

    1997   一ノ瀬　昇, 近　桂一郎

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    １．強誘電体および関連物質の薄膜の研究　強誘電体不揮発性メモリへの応用をねらいにして(Pb, La)TiO3系酸化物薄膜のRFマグネトロンスパッタ法による作成とその配向性と電気的特性の研究を行い、これらの膜がDRAM用キャパシタ材料として有望であることを示した。さらに、それぞれ優れた性質の期待されるBi4Ti3O12およびSrBi2Ta2O9について単相あるいはそれに近い膜の作成に成功した。２．酸化物高温超伝導体の変調構造の研究　Bi系酸化物超伝導体Bi2+xSr1.8CaCu2Oz, Bi2Sr1.8-yCa1+yCu2OzでBi,およびCuの価数と変調周期との関係を調べた。その結果、従来いわれてきた過剰酸素がBi-O層に入ることの他に、Bi-、Sr-、あるいはCa-サイトの各Bi占有率が変調構造に影響していることを明らかにした。３．遷移金属酸化物における磁気長距離秩序と強誘電性の共存の研究　希土類とマンガンの複酸化物RMn2O5について、強誘電性を確証し、さらに、結晶構造、およびらせん磁気秩序の発生と自発分極の起源との関連を論じた。複合原子価系LuFe2O4で、電荷秩序構造に基づく低周波誘電分散の存在を示した。　以上の諸成果の一部分は論文24篇としてすでに公表済である。さらに、数篇が印刷中、あるいは投稿中である。それらの内代表的なものを下記ページに示す。研究成果の発表一ノ瀬　昇他Electrical Properties of (Bi, La)4 Ti3O12 based Thin Films Prepared by RF Sputtering; Jpn. J. Appl. Phys., 35(1996) 4960-4962. 1996年Preparation and Characteristics of SrBi2Ta2O9 Thin Films by Multiple-Cathode Sputtering;Jpn. J. Appl. Phys., 36 (1997) 5825-5828. 1997年Fatigue Characteristics of SrBi2Ta2O9 thin Films by RF Magnetron Sputtering Method; Jpn. J. Appl. Phys., 36 (1997) 5893-5895. 1997年尾崎　肇他TCOnset, Fluctuation and Intergrain Connection in the Bi2-xGexSr2CaCu2O8+δ;Czech. J. Phys., 46 (1996) Suppl. S3, 1281. 1996年On the Correlations between Sr:Ca Substitution and Structural Modulation in the Bi-2212 Phase; Czech. J. Phys., 46 (1996) Suppl. S3, 1423. 1996年Relationships between Mutual Substitution State and Structural Modulation on the Bi2212 Cuprate; Physica C（印刷中）近　桂一郎他Pyroelectric Effect of Antiferromagnetic Rare Earth Manganite RMn2O5; J. Phys.: Condensed Matter, 8 (1996) 2673-2678. 1996年Dipole Glass Behavior of Rfe2O4; Ferroelectrics, 190 (1997) 191-196. 1997年Dielectric Dispersion and Charge Ordering of LuFe2O4; Korean J. Phys. Soc., 32 (1998) S44-46. 1998年