Details of a Researcher - OHDOMARI, Iwao

写真a

OHDOMARI, Iwao

Affiliation

Faculty of Science and Engineering

Job title

Professor Emeritus

Degree

博士(工学) ( 早稲田大学 )
修士(工学) ( 早稲田大学 )

Homepage URL

http://www.ohdomari.comm.waseda.ac.jp/index-j.html

Education Background

　

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1972

Waseda University
　

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1972

Waseda University Graduate School, Division of Science and Engineering
　

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1965

Waseda University School of Science and Engineering
　

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1965

Waseda University Faculty of Science and Engineering

Professional Memberships

　

　

　

日本表面科学会
　

　

　

応用物理学会

Research Areas

Electron device and electronic equipment / Electric and electronic materials

Research Interests

ナノエレクトロニクス
Nanoelectronics

Awards

日本表面科学会平成18年度(第11回）学会賞

2007
応用物理学会フェロー表彰

2007

Books and Other Publications

表面物性工学ハンドブック第2版

丸善, 東京 2007
エコマテリアルハンドブック

丸善, 東京 2006
実験化学講座２７機能性材料

丸善 2004
ナノテクノロジー大事典

工業調査会 2003
今日からモノ知りシリーズトコトンやさしいナノテクノロジーの本

日刊工業新聞社 2002
図解ナノテクノロジーのすべて

工業調査会 2001

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Works

ナノ構造配列を基盤とする分子ナノ工学の構築とマイクロシステムへの展開

2001

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2005
Establishment of Molecular Nano-Engineering by Utilizing Nanostructure Arrays and its Development into Micro-systems

2001

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2005
半導体中欠陥解析及び半導体表面界面に関する研究

1993

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半導体表面及び界面での原子レベルの構造解析

1993

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Study on Defects and Surfaces/Interfaces in Semiconductors

1993

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Atom level Structure Analysis of Semiconductor Surfaces and Interfaces

1993

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Research Projects

ナノプロセスシミュレータの開発
ナノ構造配列を応用する生体分子認識
ウェハスケールでのシリコンナノ構造配列の作製とその応用に関する研究
歪ナノワイヤFETsの電気伝導特性評価
シングルイオン注入法による半導体ナノ物性制御とその応用
イオン照射によるシリコン表面ナノ改質
Development of Nano-scale process simulator
Biospecific Molecular Recognition Taking Advantage of Nanostructure Array
Wafer-scale Fabrication of Silicon Nanostructure Arrays and its Applications
Evaluation of electrical properties of strained-nanowire FETs
Control of nanoscale semiconductor properties by single ion implantation and
Modification of Silicon Surface by Means of Ion Irradiation

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Misc

Single-ion Irradiation－physics, technology and applications （Invited paper)

I. Ohdomari

Journal of Physics D 2008

DOI
Single-ion Irradiation－physics, technology and applications （Invited paper)

I. Ohdomari

Journal of Physics D 2008

DOI
Surface modification of silicon with single ion irradiation

Iwao Ohdomari, Takefumi Kamioka

APPLIED SURFACE SCIENCE 254 ( 1 ) 242 - 246 2007.10

　View Summary

In order to solve the issues in Si nanoelectronics such as fluctuation in the device functions and poor reliability of devices due to relative increase in mass transport in nm size structures and to yield novel functions by rather taking advantage of the nm size, we need to understand the phenomena peculiar to nm size structures. Based on the fact that a practical method to fabricate nm structures in terms of throughput, process time, and cost is to combine modification of solid surfaces with energetic particles (especially with single ions) and subsequent chemical processing in solutions, we describe single ion irradiation effects as a tool to modify solid surfaces in nm scale, a method for nm scale in-situ observation of solid surfaces, and some examples of the acquired knowledge. (C) 2007 Elsevier B.V. All rights reserved.

DOI
Protein adsorption on self-assembled monolayers induced by surface water molecule

Yuzo Kanari, Yusuke Shoji, Hirotaka Ode, Takeo Miyake, Takashi Tanii, Tyuji Hoshin, Iwao Ohdomari

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 46 ( 9B ) 6303 - 6308 2007.09

　View Summary

Three types of self-assembled monolayers (SAMs) are employed for the investigation of protein adsorption. An octadecylsilane (ODS) SAM, a fluoroalkylsilane (FAS) SAM, and a polyethylene glycol (PEG) SAM are selected as examples. The amount of adsorbed protein is measured by fluorescent microscopy. A molecular dynamics (MD) simulation is carried out for modeling both the molecular structures of the SAMs and the water structure on the SAMs. A hydrophilic PEG SAM prevents protein adsorption, while a large amount of adsorption is observed on a hydrophobic ODS SAM. In spite of the hydrophobicity, an FAS SAM prevents protein adsorption as well as a PEG SAM. MD calculation suggests that the existence of surface-bound water on an ODS SAM induces protein, adsorption. In the case of the FAS SAM, owing to the electrostatic interaction and the flexibility of the precursor, the water molecule is not bound to the surface and protein adsorption is suppressed.

DOI CiNii
Transconductance enhancement of nanowire field-effect transistors by built-up stress induced during thermal oxidation

A. Seike, T. Tange, I. Sano, Y. Sugiura, D. Kosemura, A. Ogura, I. Ohdomari

APPLIED PHYSICS LETTERS 91 ( 6 ) 062108-062108-3 2007.08

　View Summary

The authors report the enhancement of transconductance in nanowire field effect transistors due to build-up tensile stress during thermal oxidation. To evaluate the effect of stress, nanowires were thermally oxidized at (A) 900 degrees C/15 min, (B) 850 degrees C/1 h, and (C) 850 degrees C/1 h with a subsequent 1000 degrees C annealing. The transconductance of sample B is enhanced 2.6 times compared to sample A. No enhancement of transconductance is observed in sample C. The Raman spectra indicate tensile stress in sample B and compressive stress in sample C. This establishes that g(m) enhancement is due to the build-up tensile stress in nanowires, but is diminished by viscoelastic relaxation.

DOI CiNii
Ultrasensitive detection of biomolecules using functionalized multi-walled carbon nanotubes

PingAn Hu, Takashi Tanii, Guo-Jun Zhang, Takumi Hosaka, Iwao Ohdomari

SENSORS AND ACTUATORS B-CHEMICAL 124 ( 1 ) 161 - 166 2007.06

　View Summary

An ultrasensitive and facile bioassay approach is developed using biofunctional multi-walled carbon nanotubes (MWNTs). The biofunctional MWNTs are exploited to detect trace protein in the homogeneous solution using fluorescent detection. The effect of target concentration on the fluorescent intensity is systematically studied, revealing that the detected signal is strengthened with increase in target concentration. The homogenous target-capture process performed on the biofunctional MWNTs enhances the detection sensitivity largely. The detection limit of 100 pg/ml is achieved through this bioassay. (c) 2007 Elsevier B.V. All rights reserved.

DOI CiNii
A novel approach to Au nanoparticle-based identification of DNA nanoarrays

Guo-Jun Zhang, Takashi Tanii, Yuzo Kanari, Chiaki Yasumuro, Takashi Matsukawa, Meishoku Masahara, Iwao Ohdomari

FRONTIERS IN BIOSCIENCE 12 4773 - 4778 2007.05

　View Summary

The combination of electron beam lithography and gold nanoparticle-based detection method is subject to a novel high-resolution approach to detecting DNA nanoarrays. In this work, gold nanoparticle-based detection of DNA hybridization on nanostructured arrays is presented. The nanostructured arrays were created by electron beam lithography of a self-assembled monolayer. Amine groups, which are active moieties and are used for attachment of DNA, were introduced to the nanostructures, and the amine-modified structures were characterized by scanning Maxwell-stress microscopy (SMM) for seeing the modification process. The DNA probe covalently immobilized within the nanostructures was hybridized with a biotinylated target DNA. Streptavidin-gold conjugate was then bound to the biotin, thereby assembling inside the nanostructured arrays. The sequence-specific hybridization was imaged by atomic force microscopy (AFM). On the other hand, the activity of the DNA molecules within the nanostructured arrays was verified by fluorescence microscopy using streptavidin-Cy 5 conjugate instead of streptavidin-gold nanoparticles conjugate. On the basis of fluorescent detection, an alternative method has been developed for detection of DNA nanostructures, which will benefit the development of DNA chips.

DOI
Strain distribution around SiO2/Si interface in Si nanowires: A molecular dynamics study

Hiromichi Ohta, Takanobu Watanabe, Iwao Ohdomari

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 46 ( 5B ) 3277 - 3282 2007.05

　View Summary

We have performed three-dimensional molecular dynamics simulations to investigate strain and stress distributions in silicon nanostructures covered with thermal oxide films, by using our original molecular force field for Si, O mixed systems. We have modeled a wire-shaped nanostructure by carving a Si(001) substrate, and then an oxide film with a uniform thickness was formed by inserting oxygen atom into Si-Si bonds from the surface. The simulation results show that a compressive stress is concentrated on the oxide region in the vicinity of the side SiO2/Si interface of the nanowire. At the top interface, there is also a compressive stress in the [110] direction, whereas the [001] component of the normal stress tensor is almost relaxed. These results suggest that the oxidation is strongly suppressed at the side faces of the silicon nanowire.

DOI CiNii
Analysis of binding energies between luciferin and luciferase adsorbed on Si surface by docking simulations

Katsuhiko Nishiyama, Takanobu Watanabe, Tadatsugu Hoshino, Iwao Ohdomari

CHEMICAL PHYSICS LETTERS 439 ( 1-3 ) 148 - 150 2007.05

　View Summary

The binding energies between luciferin and luciferase adsorbed on a Si surface were estimated by docking simulations. These binding energies were more stable on a hydrophilic Si surface than on a hydrophobic Si surface, but their difference was small. Luciferase adsorbed more strongly on the hydrophobic Si surface than on the hydrophilic Si surface. The luciferase active site was not covered by the Si surface in this adsorption state. The hydrophobic surface would be suitable for the immobilization of luciferase both from the viewpoints of the binding of luciferin to luciferase and the adsorption of luciferase to the Si surface. (C) 2007 Elsevier B.V. All rights reserved.

DOI CiNii
Production of nanopatterns by a combination of electron beam lithography and a self-assembled monolayer for an antibody nanoarray

Guo-Jun Zhang, Takashi Tanii, Yuzo Kanari, Iwao Ohdomari

Journal of Nanoscience and Nanotechnology 7 ( 2 ) 410 - 417 2007.02

　View Summary

We report on a flexible method of producing antibody (IgG) nanopatterns by combining electron beam (EB) lithography and a perfluorodecyltriethoxysilane (FDTES) self-assembled monolayer (SAM). Using EB lithography of the FDTES SAM, we easily fabricated IgG patterns with feature sizes on the order of 100 nm. The patterned IgG retained its ability to interact specifically with an anti-lgG. The influence of different concentrations of the IgG and anti-IgG on the resulting fluorescent IgG arrays was investigated. These IgG nanopatterns appeared to be remarkably well controlled and showed almost no detectable nonspecific binding of proteins on a hydrophobic SAM under a suitable incubation condition, characterized by atomic force microscopy, and epi-fluorescence microscopy. The technique enables the realization of high-throughput protein nanoscale arrays with high specificity. Copyright © 2007 American Scientific Publishers All rights reserved.

DOI PubMed CiNii
Production of nanopatterns by a combination of electron beam lithography and a self-assembled monolayer for an antibody nanoarray

Guo-Jun Zhang, Takashi Tanii, Yuzo Kanari, Iwao Ohdomari

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY 7 ( 2 ) 410 - 417 2007.02

　View Summary

We report on a flexible method of producing antibody (IgG) nanopatterns by combining electron beam (EB) lithography and a perfluorodecyltriethoxysilane (FDTES) self-assembled monolayer (SAM). Using EB lithography of the FDTES SAM, we easily fabricated IgG patterns with feature sizes on the order of 100 nm. The patterned IgG retained its ability to interact specifically with an anti-IgG. The influence of different concentrations of the IgG and anti-IgG on the resulting fluorescent IgG arrays was investigated. These IgG nanopatterns appeared to be remarkably well controlled and showed almost no detectable nonspecific binding of proteins on a hydrophobic SAM under a suitable incubation condition, characterized by atomic force microscopy, and epi-fluorescence microscopy. The technique enables the realization of high-throughput protein nanoscale arrays with high specificity.

DOI PubMed CiNii
Physics and Technology of Nanoscale Surface Modification of Materials for Novel Function Creation

Material Seminar, University of Southern California, Los Angeles, U.S.A. 2007
ナノエレクトロニクスの世界

名古屋大学工学部特別講義 2007
Physics and Technology of Nanoscale Surface Modification of Materials for Novel Function Creation（Invited)

Material Seminar, University of Southern California, Los Angeles, U.S.A. 2007
ナノ理工学が科学技術立国に果たす役割（招待講演）

マイクロ・ナノサイエンス・集積化システムシンポジウム～立命館大学21COEプログラム成果報告～立命館大学 2007
Selectivity improvement in protein nanopatterning with a hydroxy-terminated self-assembled monolayer template

T. Miyake, T. Tanii, K. Kato, T. Zako, T. Funatsu, I. Ohdomari

Nanotechnology 18 305304 2007
A New Kinetic Equation for Thermal Oxidation of Silicon Replacing the Deal-Grove Equation

T. Watanabe, I. Ohdomari

ECS Transactions Vol. 6 465 - 481 2007

DOI
A kinetic equation for thermal oxidation of silicon replacing the deal-grove equation

Takanobu Watanabe, Iwao Ohdomari

JOURNAL OF THE ELECTROCHEMICAL SOCIETY 154 ( 12 ) G270 - G276 2007

　View Summary

A formulated kinetic theory for thermal oxidation of silicon is presented in detail. The theory does not involve the rate-limiting step of the interfacial oxidation reaction, instead it is supposed that the diffusivity is suppressed in a strained oxide region near the SiO2/Si interface. The expression of the parabolic constant is the same as that of the Deal - Grove model, while the linear constant makes a clear distinction with the model. The estimated thickness using the expression is close to 1 nm, which compares well with the thickness of the structural transition layer. The origin of the deviation from the linear-parabolic relationship observed at initial oxidation stages can be explained by the enhanced diffusion hypothesis, which is the opposite conclusion to the Deal - Grove theory. (c) 2007 The Electrochemical Society.

DOI CiNii
Physics and Technology of Nanoscale Surface Modification of Materials for Novel Function Creation

Material Seminar, University of Southern California, Los Angeles, U.S.A. 2007
Evaluation of phosphorous pile-up at the Si/SiO2 interface

Aya Seike, Itsutaku Sano, Keisaku Yamada, Iwao Ohdomari

ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings 3 2172 - 2174 2007

DOI
Selectivity improvement in protein nanopatterning with a hydroxy-terminated self-assembled monolayer template

T. Miyake, T. Tanii, K. Kato, T. Zako, T. Funatsu, I. Ohdomari

Nanotechnology 18 305304 2007
A new kinetic equation for thermal oxidation of silicon replacing the deal-grove equation

Takanobu Watanabe, Iwao Ohdomari

ECS Transactions 6 ( 3 ) 465 - 481 2007

　View Summary

A newly formulated kinetic theory for thermal oxidation of silicon is reviewed. The new theory does not involve the rate-limiting step of the interfacial oxidation reaction, instead it is supposed that the diffusivity is suppressed in a strained oxide region near the SiO2/Si interface. The expression of the parabolic constant is the same as that of the Deal-Grove model, while the linear constant makes a clear distinction with the model. The estimated thickness using the new expression is close to 1 nm, which compares well with the thickness of the structural transition layer. The origin of the deviation from the linear-parabolic relationship observed at initial oxidation stages can be explained by the enhanced diffusion hypothesis, which is opposite conclusion to the Deal-Grove theory. © The Electrochemical Society.

DOI
A kinetic equation for thermal oxidation of silicon replacing the Deal-Grove equation

Takanobu Watanabe, Iwao Ohdomari

Journal of the Electrochemical Society 154 ( 12 ) G270 - G276 2007

　View Summary

A formulated kinetic theory for thermal oxidation of silicon is presented in detail. The theory does not involve the rate-limiting step of the interfacial oxidation reaction, instead it is supposed that the diffusivity is suppressed in a strained oxide region near the Si O2 Si interface. The expression of the parabolic constant is the same as that of the Deal-Grove model, while the linear constant makes a clear distinction with the model. The estimated thickness using the expression is close to 1 nm, which compares well with the thickness of the structural transition layer. The origin of the deviation from the linear-parabolic relationship observed at initial oxidation stages can be explained by the enhanced diffusion hypothesis, which is the opposite conclusion to the Deal-Grove theory. © 2007 The Electrochemical Society.

DOI CiNii
Nanopatterning of hydroxy-terminated self-assembled monolayer taking advantage of terminal group modification

Takeo Miyake, Takashi Tanii, Koichi Kato, Takumi Hosaka, Yuzo Kanari, Hironori Sonobe, Iwao Ohdomari

CHEMICAL PHYSICS LETTERS 426 ( 4-6 ) 361 - 364 2006.08

　View Summary

The feasibility of using an octenyltrimethoxysilane (OCS) self-assembled monolayer (SAM) as a high-resolution electron beam (EB) resist is investigated. The vinyl groups of the OCS SAM can be modified into hydroxy groups, which are useful for biochip fabrication. The hydroxy-modified OCS SAM exhibits higher sensitivity than a vinyl-terminated one. By using the hydroxy-modified OCS SAM as an EB resist, a miniaturized pattern of 18 nm is achieved. Since the hydroxy-modified OCS SAM is repellent to many proteins, this methodology can be useful for the fabrication of protein-immobilizing templates of a molecular scale. (c) 2006 Elsevier B.V. All rights reserved.

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Packing of submicrometer-sized polystyrene particles within the micrometer-sized recessed patterns on silicon substrate

Manabu Tanaka, Naonobu Shimamoto, Takashi Tanii, Iwao Ohdomari, Hiroyuki Nishide

SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS 7 ( 5 ) 451 - 455 2006.07

　View Summary

The packing of submicrometer-sized polystyrene particles within the micrometer-sized recessed patterns were achieved using silicon-microfabricated substrates and a simple dipping and pulling-up process. The polystyrene particles were selectively deposited within the micrometer-sized square, triangular, or circular recessed patterns by tuning the experimental conditions during the pulling-up process. The process produced a capillary force, i.e., a gas-liquid interfacial tension, to push the particles into the recessed patterns on the substrate. In most cases, the selectively depositing particles within the recessed patterns self-organically formed the closest packing structures. However, a special phenomenon, cubic packing structures of the particles, was observed when using square patterns with a few times larger side-length than the particle diameters. Several particle packing structures within different-sized square patterns were demonstrated, and the relationship between the particle packing structures and square pattern sizes were discussed. (c) 2006 NIMS and Elsevier Ltd. All rights reserved.

DOI CiNii
DNA micropatterning on polycrystalline diamond via one-step direct amination

GJ Zhang, KS Song, Y Nakamura, T Ueno, T Funatsu, Ohdomari, I, H Kawarada

LANGMUIR 22 ( 8 ) 3728 - 3734 2006.04

　View Summary

We report a novel method of one-step direct amination oil polycrystalline diamond to produce functionalized surfaces for DNA micropatterning by photolithography. Polycrystalline diamond was exposed to UV irradiation in ammonia gas to generate amine groups directly. After patterning, optical microscopy confirmed that micropatterns covered with an Au mask were regular in size and shape. The regions outside the micropatterns were passivated with fluorine termination by C3F8 plasma, and the chemical changes on the two different surfaces-the amine groups inside the patterned regions by one-step direct amination and fluorine termination outside the patterned regions-were characterized by spatially resolved X-ray photoelectron spectroscopy (XPS). The patterned areas terminated with active amine groups were then immobilized with probe DNA via a bifunctional molecule. The sequence specificity was conducted by hybridizing fluorescently labeled target DNA to both complementary and noncomplementary probe DNA attached inside the micropatterns. The fluorescence micropatterns observed by epifluorescence microscopy corresponded to those imaged by optical microscopy. DNA hybridization and denaturation experiments on a DNA-modified diamond show that the diamond surfaces reveal superior stability. The influence of a different amination time oil fluorescence intensity was compared. Different terminations as passivated layers were investigated, and as a result, fluorine termination points to the greatest signal-to-noise ratio.

DOI
Structural investigation of organosilane self-assembled monolayers by atomic scale simulation

H Yamamoto, T Watanabe, K Nishiyama, K Tatsumura, Ohdomari, I

JOURNAL DE PHYSIQUE IV 132 189 - 193 2006.03

　View Summary

Molecular mechanics (MM) and molecular dynamics (MID) simulations have been performed to investigate the two-dimensional structure of organosilane self-assembled monolavers (SAMs). Unlike alkanethiol SAMs, the arrangement of molecules in organosilane SAMs is not crystalline, and their molecular structure yet remains undetermined. AMBER 8 is employed with our newly developed Si parameters for the MM/MD simulations. Simulations performed for structures with different bonding networks in the polysiloxane layer shows that the ratio of hydrogen bonds has a profound effect on conformations and strain energies of optimized structures. Our results suggest that alkylsilane SAMs formed on substrates are not perfectly uniform but may have some defects.

DOI
Surface modification with single ion irradiation

13th International Conference on Solid Films and Surfaces (ICSFS-13), San Carlos de Bariloche, Argentina 2006
Single Ion Implantation into Silicon

The 16th International Microscopy Congress (IMC16), Sapporo 2006
Nanometer-Sized Polyradical Particles; Organic Magnetic Dot Array Formed on a Silicon Microfabricated Substrate

Journal of Polymer Science A 521 - 530 2006
Enhancement of field emission characteristics of tungsten emitters by single-walled carbon nanotube modification

D Ferrer, T Tanii, Matsuya, I, G Zhong, S Okamoto, H Kawarada, T Shinada, Ohdomari, I

APPLIED PHYSICS LETTERS 88 ( 3 ) 033116/1-033116/3 2006.01

　View Summary

We present a simple method for improving the field emission performance of tungsten-tip electron sources based on single-walled carbon nanotube (SWCNT) modification. By coating a sandwich-like thin film of Al-Fe-Al (with Fe as a catalyst) on a tungsten tip, SWCNTs were synthesized at 600 degrees C in a chemical vapor deposition (CVD) reactor. The influence of CNT modification on the electron emission characteristics of the emitters was investigated by means of a triode structure. We have found that CNT-modified tungsten tips exhibit low threshold-voltage for electron emission, and improved emission-current stability, compared with nonmodified and Al-Fe-Al-coated needles. (c) 2006 American Institute of Physics.

DOI
パネルディスカッション「大学力」

早大先端科学・健康医療融合研究機構第2回公開シンポジウム - 早稲田の挑戦と「大学力」 - 2006
Analysis of Interactions between Luciferase and Si Substrates Using Molecular Dynamics Simulations

NISHIYAMA Katsuhiko, NISHIYAMA Katsuhiko, WATANABE Takanobu, WATANABE Takanobu, HOSHINO Tadatsugu, HOSHINO Tadatsugu, OHDOMARI Iwao

Jpn. J. Appl. Phys. 45 ( 2A ) 1021 - 1025 2006

DOI CiNii
Creation of functional surfaces by means of nanoscale modifications of solid surfaces with energetic particles（Invited)

UCLA Nonosystems Seminar 2006
Nanoscale Surface Modification of Silicon with Single Ions（Invited)

8th International Conference on Advanced Surface Engineering (8th ICASE) 2006
New Linear-Parabolic Rate Equation for Thermal Oxidation of Silicon

Phys. Rev. Lett. 96 196102 2006
早稲田大学ナノ理工学研究機構における研究および人材育成活動

文科省科学技術振興調整費新興分野人材養成プログラム「ナノ・IT・バイオ知財経営戦略スキルアッププログラム」特別講座 2006
早稲田大学ナノテクプロジェクトの紹介(招待講演）

第１回京都ナノ融合イノベーションシンポジウム、京都大学百周年時計台記念館百周年記念ホール 2006
ナノテクノロジー概論

産業連携製造中核人材育成事業ナノテク中核人材の養成プログラム「表面極微細加工技術」 2006
ナノテクノロジーの現状とワセダの挑戦(招待講演）

千代田稲門会総会、ホテルグランドパレス 2006
Surface modification with single ion irradiation（Invited)

13th International Conference on Solid Films and Surfaces (ICSFS-13), San Carlos de Bariloche, Argentina 2006
Single Ion Implantation into Silicon（Invited)

The 16th International Microscopy Congress (IMC16), Sapporo 2006
New Linear-Parabolic Rate Equation for Thermal Oxidation of Silicon

Phys. Rev. Lett. 96 196102 2006
Surface modification with single ion irradiation

13th International Conference on Solid Films and Surfaces (ICSFS-13), San Carlos de Bariloche, Argentina 2006
Single Ion Implantation into Silicon

The 16th International Microscopy Congress (IMC16), Sapporo 2006
Analysis of interactions between green fluorescent protein and silicon substrates using molecular dynamics simulations

K Nishiyama, T Watanabe, T Hoshino, Ohdomari, I

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 44 ( 11 ) 8210 - 8215 2005.11

　View Summary

We have performed a series of molecular dynamics (MD) simulations on interactions between green fluorescent protein (GFP) and Si substrates. The results show that GFP adsorbs directly on the hydrophobic substrate, and via water molecules on the hydrophilic substrate. The adsorption-induced changes in the conformation of GFP are smaller on the hydrophilic substrate than on the hydrophobic substrate. On the other hand, the dynamic atom motions in GFP are larger on the hydrophobic substrate than on the hydrophilic substrate. In order to prevent the denaturation of proteins caused by immobilization on a substrate, the Si surface should be prepared from the viewpoints of both conformation and dynamic atom motions.

DOI CiNii
Enhancing semiconductor device performance using ordered dopant arrays

T Shinada, S Okamoto, T Kobayashi, Ohdomari, I

NATURE 437 ( 7062 ) 1128 - 1131 2005.10

　View Summary

As the size of semiconductor devices continues to shrink, the normally random distribution of the individual dopant atoms within the semiconductor becomes a critical factor in determining device performance-homogeneity can no longer be assumed(1-5). Here we report the fabrication of semiconductor devices in which both the number and position of the dopant atoms are precisely controlled. To achieve this, we make use of a recently developed single-ion implantation technique(6-9), which enables us to implant dopant ions one-by-one into a fine semiconductor region until the desired number is reached. Electrical measurements of the resulting transistors reveal that device-to-device fluctuations in the threshold voltage (V-th; the turn-on voltage of the device) are less for those structures with ordered dopant arrays than for those with conventional random doping. We also find that the devices with ordered dopant arrays exhibit a shift in V-th, relative to the undoped semiconductor, that is twice that for a random dopant distribution (-0.4 V versus -0.2 V); we attribute this to the uniformity of electrostatic potential in the conducting channel region due to the ordered distribution of dopant atoms. Our results therefore serve to highlight the improvements in device performance that can be achieved through atomic-scale control of the doping process. Furthermore, ordered dopant arrays of this type may enhance the prospects for realizing silicon-based solid-state quantum computers(10).

DOI
Nanoscale patterning of protein using electron beam lithography of organosilane self-assembled monolayers

GJ Zhang, T Tanii, T Zako, T Hosaka, T Miyake, Y Kanari, TW Funatsu, Ohdomari, I

SMALL 1 ( 8-9 ) 833 - 837 2005.08

DOI
Reactions and diffusion of atomic and molecular oxygen in the SiO2 network

K Tatsumura, T Shimura, E Mishima, K Kawamura, D Yamasaki, H Yamamoto, T Watanabe, M Umeno, Ohdomari, I

PHYSICAL REVIEW B 72 ( 4 ) 2005.07

　View Summary

To address the reactions and diffusion of atomic and molecular oxygen in SiO2, the modification of the SiO2 network on exposure to an atomic or molecular oxygen atmosphere is investigated by measuring the x-ray-diffraction profile of the residual order peak emanating from the oxide. Analyses of the peak intensity and its fringe pattern provide experimental evidence for the recent theoretical predictions, indicating that atomic oxygen is incorporated into the SiO2 network near the surface and diffuses toward the interface along with modifying it even at a low temperature of 400 degrees C, whereas molecular oxygen diffuses without reacting with the bulk SiO2 even at a temperature of 850 degrees C that is sufficiently high for oxidation reaction at the interface.

DOI
Hybridization of deoxyribonucleic acid and immobilization of green fluorescent protein on nanostructured organosilane templates

T Tanii, T Hosaka, T Miyake, Y Kanari, GJ Zhang, T Funatsu, Ohdomari, I

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 44 ( 7B ) 5851 - 5855 2005.07

　View Summary

We propose a novel process for preferential immobilization of deoxyribonucleic acid (DNA) and green fluorescent protein (GFP) onto organosilane self-assembled monolayer (SAM) templates. One of the advantages of using the organosilane SAM as the template is that it is electron-beam sensitive and, by utilizing the SAM as an alternative resist film, we can make nanopatterns on a molecular scale because the proximity effect is negligible owing to the film's thinness. An other advantage is that the organosilane SAM is repellent to both DNA and GFP. Thus, the patterned SAM can be utilized as the passivation film covering the outside of the pattern while DNA and GFP are immobilized within the pattern. We investigate two kinds of organosilane SAMs for the template. One is n-octadecyltrimethoxysilane (ODS) SAM, and the other is 1H,1H,2H,2H-perfluorodecyltriethoxysilane (FDS) SAM. Our results indicate that the ODS SAM is more repellent to DNA than the FDS SAM and is suitable for DNA immobilization, while the FDS SAM template is suitable for GFP immobilization via biotin-avidin coupling because the FDS SAM surface prevents the nonspecific adsorption of streptavidin. Although the nonspecific adsorption of DNA and GFP on a SAM is also recognized, by controlling both the concentration and the incubation time, we can immobilize DNA and GFP preferentially onto nanopatterns of 100 nm diameter.

DOI
A novel process for fabrication of gated silicon field emitter array taking advantage of ion bombardment retarded etching

T Tanii, S Fujita, Y Numao, Matsuya, I, M Sakairi, M Masahara, T Ohdomari

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 44 ( 7A ) 5191 - 5192 2005.07

　View Summary

A novel process for the fabrication of a gated silicon field emitter array is proposed. The process involves complete self-alignment of gate electrodes taking advantage of ion bombardment retarded etching. The ion-irradiated regions serve as masks for subsequent silicon etching resulting in the formation of tabletop structures. The structures are suitable for both the formation of pyramidal emitters and the arrangement of gate electrodes adjacent to each emitter. We integrate this silicon etching into a self-align process for the fabrication of gated emitter array. The emission characteristics of 100 emitters are tested, and the emission at a gate voltage of 30 V is detected. The results indicate that the proposed process is applicable to the fabrication of gated silicon emitters.

DOI CiNii
Low temperature synthesis of extremely dense, and vertically aligned single-walled carbon nanotubes

GF Zhong, T Iwasaki, K Honda, Y Furukawa, Ohdomari, I, H Kawarada

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 44 ( 4A ) 1558 - 1561 2005.04

　View Summary

A novel point-arc microwave plasma chemical vapor deposition (CVD) apparatus was employed to grow single-walled carbon nanotubes (SWNTs) on Si substrates coated with a sandwich-like nano-layer structure of 0.7 nm Al2O3 (top)/0.5 nm Fe/ 5-70nm Al2O3 by conventional high frequency sputtering. The growth of extremely dense and vertically aligned SWNTs with an almost constant growth rate of 270 mu m/h within 40 min at a temperature as low as 600 degrees C was demonstrated for the first time. The volume density of the as-grown SWNT films is as higher as 66 kg/m(3).

DOI
Very high yield growth of vertically aligned single-walled carbon nanotubes by point-arc microwave plasma CVD

GF Zhong, T Iwasaki, K Honda, Y Furukawa, Ohdomari, I, H Kawarada

CHEMICAL VAPOR DEPOSITION 11 ( 3 ) 127 - 130 2005.03

DOI
Analysis of interactions between green fluorescent protein and Si substrates using molecular dynamics simulations

Jpn. J. Appl. Phys. 2005

DOI
ナノテクノロジーの産業化に向けての現状と課題（招待講演）

早大商学部稲龍会 2005
Si Island Formation on Domain Boundaries Induced by Ar Ion Irradiation on High-Temperature Si(111)-7x7 Dimer-Adatom-Stacking Fault Surfaces

Jpn. J. Appl. Phys. Vol.44 ( No.10 ) 2005

DOI
早稲田大学におけるナノテクノロジー人材育成への取り組み（招待講演）

産総研シンポジウム「ナノテクノロジーと社会—人材育成と技術アセスメントー」 2005
Creation of Functional Surfaces by Means of Nanoscale Surface Modification and Subsequent Chemical Processes（Invited)

Molecule-Based Information Transmission and Reception(MB-ITR2005) 2005
シングルイオン注入法(SII)によるナノ加工と新機能創出(招待講演）

自民党政調「科学技術創造立国推進調査会」 2005
早稲田大学ナノ理工学研究機構における研究および人材育成活動

文科省科学技術振興調整費新興分野人材育成プログラム「ナノ・IT・バイオ知財経営戦略スキルアッププログラム」特別講座 2005
ナノテクノロジ研究から見た科学技術立国の要件（招待講演）

平成16年度日本表面科学会特別講演会 2005
Reactions and Diffusion of Atomic and Molecular Oxygen in the SiO2 Network

Phys. Rev. B 72 ( 045205 ) 2005

DOI
From Semiconductor Technology to Bio-Nanotechnology－Detection of Single Molecule by Means of Nanostructure Array（Invited)

International Conference on the Formation of Semiconductor Interfaces (ICFSI-10), 2005
科学と技術の系譜―ナノ理工学にかける夢―（招待講演）

慶応義塾大学理工学部特別講義 2005
特集いま理工系人材に起きている変化と処方 ―第1回座談会人材危機の原因を探る

Engineers’ Colors 創刊号 2005
研究リーダーを務める文部科学省科学研究費補助金中核的研究拠点(COE)形成プロジェクト「ナノ構造配列を基盤とする分子ナノ工学の構築とマイクロシステムへの展開」の海外研究交流として、米国スタンフォード大学とジョイントシンポジウム（2005 Symposium on Nanoscale, Materials, Processes and Devices）を2005年11月2日～4日にハワイで開催した。

2005
Development of liquid-metal-ion source low-energy ion gun / high-temperature ultrahigh vacuum scanning tunneling microscope combined system

Rev. Sci. Inst. 76 ( 126109 ) 126109/1-126109/4 2005

DOI
研究リーダーを務める文部科学省科学研究費補助金中核的研究拠点(COE)形成プロジェクト「ナノ構造配列を基盤とする分子ナノ工学の構築とマイクロシステムへの展開」の成果報告の場として、早大COE「分子ナノ工学研究拠点」第5回（最終年度）公開シンポジウムを早大ナノテクノロジーフォーラムと連携して、2005年12月5日～7日に早大国際会議場で開催した。のべ723名の参加者を得て、大変盛況なシンポジウムとなった。

2005
Analysis of interactions between green fluorescent protein and Si substrates using molecular dynamics simulations

Jpn. J. Appl. Phys. 2005

DOI
Si Island Formation on Domain Boundaries Induced by Ar Ion Irradiation on High-Temperature Si(111)-7x7 Dimer-Adatom-Stacking Fault Surfaces

Jpn. J. Appl. Phys. Vol.44 ( No.10 ) 2005

DOI
Micropatterning oligonucleotides on single-crystal diamond surface by photolithography

GJ Zhang, H Umezawa, H Hata, T Zako, T Funatsu, L Ohdomari, H Kawarada

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 44 ( 8-11 ) L295 - L298 2005

　View Summary

DNA micropatterns have been for the first time fabricated on a single-crystal diamond surface in conjunction with the photolithography technique. A new chemical modification process for producing amine groups inside patterned regions and a passivation layer terminated with fluorine outside patterned regions is demonstrated. The resulting amine groups within patterned areas and fluorine termination outside patterned areas on the single-crystal diamond surface were characterized by spatially resolved X-ray photoelectron spectroscopy. Amine-terminated oligonucleotides were then linked to the amine patterned regions using a crosslinker. It was revealed that hybridization on DNA-patterned diamond is specific and selective, with a low background outside the patterns and strong binding to complementary probe DNA immobilized inside the patterns but no binding to noncomplementary probe DNA similarly immobilized inside the patterns. These results suggest that DNA micropatteming on a single-crystal diamond may serve as an ideal platform for future biochips and biosensors.

DOI
Creation of Functional Surfaces by Means of Nanoscale Surface Modification and Subsequent Chemical Processes（Invited)

Molecule-Based Information Transmission and Reception(MB-ITR2005) 2005
From Semiconductor Technology to Bio-Nanotechnology－Detection of Single Molecule by Means of Nanostructure Array（Invited)

International Conference on the Formation of Semiconductor Interfaces (ICFSI-10), 2005
SiO(2)/Si interface structure and its formation studied by large-scale molecular dynamics simulation

T Watanabe, K Tatsumura, Ohdomari, I

APPLIED SURFACE SCIENCE 237 ( 1-4 ) 125 - 133 2004.10

　View Summary

We investigated the atomic structure of the SiO(2)/Si interface and the initial oxidation process of Si surfaces using our developed large-scale atomistic simulation technique for Si, O mixed systems. We constructed large-scale SiO(2)/Si(0 0 1) interface models (now up to 12,536 atoms in size) by inserting O atoms into Si-Si bonds in crystalline Si substrates from the surface of the models. The resulting SiO(2)/Si Models exhibited a compressively strained oxide region near the interface, and reproduced X-ray diffraction peaks compatible with experimental results. Using the large-scale modeling technique, we simulated an atomistic oxidation process where the O atoms were introduced into the Si substrate in one by one so as to minimize the strain energy caused by the insertion of the O atoms. A mostly abrupt change in the composition at the SiO(2)/Si interface was reproduced in this energetic scheme, though the oxidation did not proceed layer by layer as previously reported by many other reports. We found out that the layer-by-layer oxidation phenomenon can be explained by the kinetics of oxidants arriving at the interface through the oxide film. (C) 2004 Elsevier B.V. All rights reserved.

DOI
Electron beam lithography on organosilane self-assembled monolayer resist

Takashi Tanii, Takumi Hosaka, Takeo Miyake, Iwao Ohdomari

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 43 ( 7 A ) 4396 - 4397 2004.07

　View Summary

We report a result of a feasibility study on the application of an octadecyltrimethoxysilane self-assembled monolayer to a resist film for electron beam lithography. The self-assembled monolayer deposited on a silicon dioxide surface by chemical vapor deposition is resistant to both sulfuric acid and hydrofluoric acid. By immersing the electron-beam-irradiated surface into both acids, we successfully develop microstructural patterns in the self-assembled monolayer. In particular, we show the effectiveness of immersing the substrate into a sulfuric-acid-based solution for the development of the pattern. The relationship between the required dose and the developing time is estimated by measuring the morphology of the developed patterns by atomic force microscopy. The pattern in the self-assembled monolayer can be transferred into both the underlying silicon dioxide layer and the silicon substrate. These results indicate that the organosilane self-assembled monolayer serves as an alternative resist for electron beam lithography.

DOI CiNii
Selective growth of carbon nanostructures on nickel implanted nanopyramid array

D Ferrer, T Shinada, T Tanii, J Kurosawa, G Zhong, Y Kubo, S Okamoto, H Kawarada, Ohdomari, I

APPLIED SURFACE SCIENCE 234 ( 1-4 ) 72 - 77 2004.07

　View Summary

Carbon nanostructures (CN) have been selectively grown directly onto the top of nickel ion implanted nanopyramid array (Ni NPA) by the plasma enhanced chemical vapor deposition (p-CVD) technique. Firstly, NPA were fabricated by taking advantage of the anisotropic etching characteristics of silicon in hydrazine (N2H4H2O); where the ion implanted area acted as a mask for hydrazine etching. Secondly, carbon nanostructures were grown on Ni NPA by feeding methane/hydrogen (CH4/H-2) mixtures into p-CVD reactor. The change of concentration ratio of methane to hydrogen dramatically affected the growth selectivity of CN. Methane concentrations lower than 20%, promoted the selective growth of CN on the top of Ni NPA. Morphology and chemical nature of grown species were studied by employing scanning electron microscopy (SEM), and energy dispersive X-ray (EDX) spectroscopy, respectively. (C) 2004 Elsevier B.V. All rights reserved.

DOI
Preferential immobilization of biomolecules on silicon microstructure array by means of electron beam lithography on organosilane self-assembled monolayer resist

T Tanii, T Hosaka, T Miyake, GJ Zhang, T Zako, T Funatsu, Ohdomari, I

APPLIED SURFACE SCIENCE 234 ( 1-4 ) 102 - 106 2004.07

　View Summary

A novel fabrication process of silicon microstructure array for preferential immobilization of biomolecules is proposed. We perform electron beam lithography on a self-assembled monolayer (SAM), and achieve high-density silicon patterns terminated with both 3-aminopropyltriethoxysilane (APTES) and octadecyltrimethoxysilane (ODS). The amino-terminated surface produces the site-directed covalent immobilization of DNA inside the pattern, while the hydrophobic surface of the ODS-SAM prevents the adsorption. As a result, we have succeeded in immobilizing the DNA within the amino-modified area. By using this methodology, we demonstrate the miniaturization of deoxyribonucleic acid (DNA) chip. After the covalent attachment of the amino-modified oligonucleotides to the microstructures, we hybridize the immobilized DNA with the target DNA labeled with a fluorescent dye. The signals from the DNA chip exhibit the specific binding due to the DNA-DNA interaction. These results show the feasibility of this technique for high-density information storage and biochip miniaturization. (C) 2004 Elsevier B.V. All rights reserved.

DOI
Improved interatomic potential for stressed Si, O mixed systems

T Watanabe, D Yamasaki, K Tatsumura, Ohdomari, I

APPLIED SURFACE SCIENCE 234 ( 1-4 ) 207 - 213 2004.07

　View Summary

We propose an improved formula of a previous interatomic potential for Si, O mixed systems. The new potential is designed so as to more accurately reproduce the structural property of compressively strained SiO2 structures, by reducing unnatural steric hindrance caused by a long-range part of a three-body term. As the results of the improvement, (1) compressive stress in SiO2 film, which was highly overestimated to be 13 GPa by the earlier potential, is reduced to 2.7 GPa, and (2) a spurious peak in Si-O pair correlation function of SiO2 film disappeared. A limitation of the conventional interatomic potentials and its solution are also discussed. (C) 2004 Elsevier B.V. All rights reserved.

DOI
Electron beam lithography on organosilane self-assembled monolayer resist

T Tanii, T Hosaka, T Miyake, Ohdomari, I

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 43 ( 7A ) 4396 - 4397 2004.07

　View Summary

We report a result of a feasibility study on the application of an octadecyltrimethoxysilane, self-assembled monolayer to a resist film for electron beam lithography. The self-assembled monolayer deposited on a silicon dioxide surface by chemical vapor deposition is resistant to both sulfuric acid and hydrofluoric acid. By immersing the electron-beam-irradiated surface into both acids, we successfully develop microstructural patterns in the self-assembled monolayer. In particular, we show the effectiveness of immersing the substrate into a sulfuric-acid-based solution for the development of the pattern. The relationship between the required dose and the developing time is estimated by measuring the morphology of the developed patterns by atomic force microscopy. The pattern in the self-assembled monolayer can be transferred into both the underlying silicon dioxide layer and the silicon substrate. These results indicate that the organosilane self-assembled monolayer serves as an alternative resist for electron beam lithography.

DOI CiNii
Patterning of DNA nanostructures on silicon surface by electron beam lithography of self-assembled monolayer

GJ Zhang, T Tanii, T Funatsu, Ohdomari, I

CHEMICAL COMMUNICATIONS ( 7 ) 786 - 787 2004.04

　View Summary

Nanoscale patterns of modified oligonucleotides are produced on octadecyltrimethoxysilane self-assembled monolayers at a silicon surface by electron beam lithography. DNA structures with feature sizes of the order of 250 nm were detected by epifluorescence microscopy.

DOI
Large-scale atomistic modeling of thermally grown SiO(2) on Si(111) substrate

K Tatsumura, T Watanabe, D Yamasaki, T Shimura, M Umeno, Ohdomari, I

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 43 ( 2 ) 492 - 497 2004.02

　View Summary

Large-scale SiO(2)/Si(111) models were constructed by introducing oxygen atoms in c-Si models in an atom-by-atom manner. Molecular dynamics calculation at a constant temperature was repeatedly carried out for the growing oxide model. By comparing the oxidation simulation of Si(111) substrate with that of Si(001) substrate performed previously, the influence of substrate orientation on the oxide structure was discussed. Owing to the significant feature of bonding arrangement within a Si bilayer in the Si(111) substrate, the inherent stress induced at the SiO(2)/Si interface by oxygen insertions is originally higher for the Si(111) oxidation than for the Si(001) oxidation, resulting in frequent changes in the bonding network. The resulting structure of bulk SiO(2) on Si(111) has less strain and a lower density than that on Si(001), but involves a larger number of dangling bonds. The X-ray diffraction pattern calculated for the SiO(2)/Si(111) model exhibits a diffraction peak with a Laue-function-like profile on each of the crystal-truncation-rods from the 111 and 11 (1) over bar points, agreeing well with experimental results. These diffraction peaks indicate that the thermally grown SiO(2) retains the residual order emanating from the {111} atomic planes in the original c-Si. Because of differences in the angles between the surface and the {111} atomic planes, the residual order within the SiO(2) differs depending on the substrate orientation.

DOI
Electron Beam Lithography on Organosilane Self-Assembled Monolayer Resist

TANII T, HOSAKA T, MIYAKE T, OHDOMARI I

Jpn. J. Appl. Phys. 43 ( 7A ) 4396 - 4397 2004

DOI CiNii
Residual Order within Thermally-Grown Amorphous SiO2 on Crystalline Silicon

Phys. Rev. B. 69 2004
ナノテクノロジーと産業応用の可能性(招待講演)

多摩緑栄会 2004
Introduction of Waseda-COE, Surface Modification, FIB and SII(招待講演)

The Workshop on Nano/Micro Egineering Technology/Precision Instrument Development Center, National Science Council(台湾) 2004
Selective Deposition of Polystyrene Nano-particles in the Nanoetchpit-Array on a Silicon Substrate

ChemComm. 2004

DOI
早稲田大ナノ理工学研究機構(INN)の発足と今後の展望

北大－早大研究交流会－ナノテクノロジーとバイオテクノロジー－ 2004
ナノテクとその事業化について(招待講演)

２１世紀のベンチャー企業、イノベーション、MOTム日本ベンチャー学会、イノベーション研究部会設立５周年記念シンポジウム 2004
シリコンナノ構造配列形成と生体分子への応用

北大－早大研究交流会－ナノテクノロジーとバイオテクノロジー－ 2004
Attachment of DNA to microfabricated arrays with self-assembled monolayer

Thin Solid Films 464-465 2004
特集—映像情報メディアのナノテクノロジー：ナノテクノロジーの現状と課題

映像情報メディア学会誌9月号 2004
分子ナノ工学の構築に向けての私達の取り組み（招待講演）

表面技術協会第110回秋季講演大会シンポジウム/セッション「表面ナノテクノロジー」 2004
Creation of functional surfaces by means of particle Irradiation and subsequent chemical processes（Invited)

The 5th International Symposium on Electrochemical Micro & Nano System Technologies(EMT04) 2004
不純物の原子スケール制御とシングルイオン注入

第65回応用物理学会学術講演会－結晶工学分科会企画シンポジウム 2004
半導体技術からナノバイオテクノロジーへ

第65回応用物理学会学術講演会 2004
特集: 科学研究費補助金 / 私立大学研究者から見た科研費について

学術月報2004年10月号 2004
Creation of Functional Surfaces by Means of Particle Irradiation and Subsequent Chemical Processes（Invited)

International Workshop on Surface-Biotronics 2004
早大のナノテク推進活動の取り組みとナノテク将来動向（招待講演）

電子情報津信学会「第２回次世代ナノ研究会」 2004
研究リーダーを務める文部科学省科学研究費補助金中核的研究拠点(COE)形成プロジェクト「ナノ構造配列を基盤とする分子ナノ工学の構築とマイクロシステムへの展開」の成果報告の場として、早大COE「分子ナノ工学研究拠点」第４回公開シンポジウム”半導体ナノテクノロジー”を、200４年12月２０日～２２日に早大国際会議場で開催した。

2004
SiO2/Si Interface Structure and its Formation Studied by Large-scale Molecular Dynamics Simulation

Appl. Surf. Sci. 237 2004

DOI
Attachment of DNA to microfabricated arrays with self-assembled monolayer

Thin Solid Films 464-465 2004
Creation of functional surfaces by means of particle Irradiation and subsequent chemical processes（Invited)

The 5th International Symposium on Electrochemical Micro & Nano System Technologies(EMT04) 2004
Effects of thermal history on residual order of thermally grown silicon dioxide

K Tatsumura, T Watanabe, D Yamasaki, T Shimura, M Umeno, Ohdomari, I

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 42 ( 12 ) 7250 - 7255 2003.12

　View Summary

By simulation of silicon oxidation and measurement of X-ray crystal-truncation-rod (CTR) scattering, the structures of silicon dioxide films grown at different temperatures and the structural changes due to thermal annealing have been investigated. Large-scale SiO2/Si(001) models were formed by introducing oxygen atoms, atom-by-atom, in crystalline Si from the surfaces. Molecular dynamics (MD) calculation at a constant temperature was repeatedly carried out for the growing oxide model. The intensity and position of the extra diffraction peak observed for the oxide, correlating with the residual order emanating from the parent Si crystal, depend on the growth temperature and change after thermal annealing. The peak intensity becomes smaller with increasing growth temperature. Thermal annealing monotonically decreases the peak intensity and shifts the position along the CTR,. toward the lower angle side. There is a good agreement between the results of simulation and experiment. It is shown that (1) the oxide grown At a higher temperature has a lower degree of residual order, (2) thermal annealing decreases the residual order, ultimately leads to complete amorphization and never restores the ordering, and (3) the peak shift along the CTR corresponds to the volumetric expansion of the SiO2 in the surface-normal direction.

DOI
Fabrication of ultrathin Si channel wall for vertical double-gate metal-oxide-semiconductor field-effect transistor (DG MOSFET) by using ion-bombardment-retarded etching (IBRE)

M Masahara, T Matsukawa, K Ishii, YX Liu, M Nagao, H Tanoue, T Tanii, Ohdomari, I, S Kanemaru, E Suzuki

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 42 ( 4B ) 1916 - 1918 2003.04

　View Summary

It was found that the etch rate of Si in tetramethylammonium hydroxide (TMAH) solution is significantly retarded by introducing ion implantation damage.. By utilizing this new phenomenon, i.e., ion-bombardment-retarded etching (IBRE) of Si, a novel process to fabricate an ultrathin Si channel wall for the vertical double-gate (DG) metal-oxide-semiconductor field effect transistor (MOSFET) was developed. We succeeded in fabricating a vertical Si wall with thickness of 16 nm on bulk Si substrate with no introduction of dry etching damage. The effectiveness of thinning the Si channel wall to the characteristics of a vertical DG MOSFET was examined by means of simulations.

DOI
The Immobilization of DNA on Microstructured Patterns Fabricated by Maskless Lithography

Sens. Actuat. B 97 (2-3) 2003
Si結晶表面のナノスケール改質のためのシミュレーション-初期酸化およびイオン注入素過程の研究-

粉砕第54巻;第12号 2003
Probability of Atomic or Molecular Oxygen Species in Silicon and Silicon Dioxide

Jpn. J. Appl. Phys. Vol.42 2003

DOI
Diffusion of Molecular and Atomic Oxygen In Silicon Oxide

Jpn. J. Appl. Phys. Vol.42 2003

DOI
現実的なナノテクノロジーを目指す取り組み(招待講演)

（財）神奈川科学技術アカデミー講演 2003
シリコンテクノロジーを基盤とするナノ物性制御と応用

北大ー早大研究交流会ーナノテクノロジーとバイオテクノロジー 2003
研究リーダーを務める文部科学省科学研究費補助金中核的研究拠点(COE)形成プロジェクト「ナノ構造配列を基盤とする分子ナノ工学の構築とマイクロシステムへの展開」の成果報告の場として、早大COE「分子ナノ工学研究拠点」第２回公開シンポジウム"ケミカルプロセスと分子ナノ工学への貢献”を、200３年2月２０日～２１日に早大国際会議場で開催した。のべ3０３名の参加者を得て、活発な議論が行われた。

2003
分子ナノ工学の構築とマイクロシステムへの展開

月刊クリーンテクノロジー 2003年2月号、Vol. 13 No.2 2003
ナノテクノロジーと化学

化学と教育 2003年2月号 51巻2号 2003
ナノ構造配列を基盤とする分子ナノ工学の構築(招待講演)

北海道大学講演 2003
ナノテクノロジーと化学(招待講演)

化学教育講習会/日本化学会 2003
ナノ構造体による分子認識の試み(招待講演)

（株）関西新技術研究所ワークショップ講演 2003
Trend of Nanotechnology in Japan and Our Challenge at Waseda University(招待講演)

台日産学連携共同フォーラム/台日商務協議会、台湾経済部 2003
シングルイオン注入による半導体核スピン配列形成の試み(招待講演)

早稲田研究集会「量子情報、量子計算、ナノテクノロジー」 2003
シングルイオン注入技術と評価(招待講演)

応用物理学会結晶工学分科会第8回結晶工学セミナー 2003
ナノテク産業育成のスキームについて(招待講演)

早稲田大学アントレプレヌール研究会定例会 2003
研究リーダーを務める文部科学省科学研究費補助金中核的研究拠点(COE)形成プロジェクト「ナノ構造配列を基盤とする分子ナノ工学の構築とマイクロシステムへの展開」の成果報告の場として、早大COE「分子ナノ工学研究拠点」第３回公開シンポジウム"分子ナノ工学とバイオサイエンス・テクノロジーの接点”を、200３年12月１８日～１９日に早大国際会議場で開催した。のべ350名の参加者を得て、活発な議論が展開された。またプロトタイプ研究成果に対し、大きな反響があった。

2003
The Immobilization of DNA on Microstructured Patterns Fabricated by Maskless Lithography

Sens. Actuat. B 97 (2-3) 2003
Probability of Atomic or Molecular Oxygen Species in Silicon and Silicon Dioxide

Jpn. J. Appl. Phys. Vol.42 2003

DOI
Diffusion of Molecular and Atomic Oxygen In Silicon Oxide

Jpn. J. Appl. Phys. Vol.42 2003

DOI
Improvement of focused ion-beam optics in single-ion implantation for higher aiming precision of one-by-one doping of impurity atoms into nano-scale semiconductor devices

T Shinada, H Koyama, C Hinoshita, K Imamura, Ohdomari, I

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS 41 ( 3A ) L287 - L290 2002.03

　View Summary

Focused ion-beam (FIB) optics in single-ion implantation (SII), which enables us to implant dopant ions one-by-one into a fine semiconductor region until the necessary number is reached. has been modified in order to improve the controllability of dopant atom position to within 100 nm. The lateral magnification of the objective lens (OL) was remodeled to 1/19 from the original value of 1/6 before modification. Scanning ion microscope (SIM) images at a high magnification of 75,000 were taken using a 60 keV focused Si ion beam with a current of 1 pA to evaluate the resolution of secondary electron images. A diameter of the ion beam less than of 20 nm was obtained. One-by-one, 60 keV Si ions were implanted by means of SII into CR-39 which is a fission track detector for investigating the aiming precision. Deviation of the single ion incident site from the target position was evaluated using atomic force microscopy (AFM) and compared with that before modification of FIB optics. The average aiming precision in SII was improved to be 60 nm which was 1/3 of that before modification.

DOI
シングルイオン注入法を用いたナノスケール表面改質

機械の研究第54巻;第11号 2002
第２版応用物理ハンドブック?8.3電子物性

第２版応用物理ハンドブック/丸善 2002
モノ知りシリーズトコトンやさしいナノテクノロジーの本（第3刷）

日刊工業新聞社 2002
図解ナノテクノロジー

工業調査会 164～167頁 2002
理工文化のすすめ

東洋経済新聞社 2002
Large-scale Modeling of Silicon-dioxide Films by Means of Molecular Dynamics

WATANABE Takanobu, TATSUMURA Kosuke, OHDOMARI Iwao

J. Surf. Sci. Soc. Jpn. 23;2,pp.74-80 ( 2 ) 74 - 80 2002

　View Summary

Large-scale modeling of ultra-thin SiO₂ films on Si(001) surfaces has been performed by means of molecular dynamics utilizing our original inter-atomic potential energy function for Si, O mixed systems. The SiO₂ film is formed by layer-by-layer insertion of O atoms into Si-Si bonds in a Si wafer from the surface. The obtained models reproduce quantitatively the structural transition layers near the interface. Through a modeling of vicinal SiO₂/Si(001) model including atomic steps, it has been found that oxide film near the step-edge is preferentially amorphized. For a more advanced modeling method, we propose a new simulation procedure where O atoms are introduced into the substrate in one-by-one manner. In the calculation, the oxidation is started from the surface and abrupt change in composition at the SiO₂/Si interface is reproduced. Thus, the classical molecular dynamics is a powerful method together with a simplified inter-atomic potential function applicable to mixed systems.

DOI CiNii
研究リーダーを務める文部科学省科学研究費補助金中核的研究拠点(COE)形成プロジェクト「ナノ構造配列を基盤とする分子ナノ工学の構築とマイクロシステムへの展開」の成果報告の場として、早大COE「分子ナノ工学研究拠点」第１回公開シンポジウムを、200２年１月２８日早大国際会議場で開催した。

2002
モノ知りシリーズトコトンやさしいナノテクノロジーの本

日刊工業新聞社 2002
創刊40周年記念座談会「ナノテクノロジーが産業を変える」

電子材料2002年6月号（株）工業調査会 2002
巻頭言ナノテクノロジーに日本再生を託そう

応用物理第71巻第8号 2002
Our Approach to a 'Practical' Nanotechnology（招待講演）

浙江大学ナノテクセンター研究交流会講演 2002
Our Approach to a 'Practical' Nanotechnology（招待講演）

北京科技大学講演 2002
Our Approach to a 'Practical' Nanotechnology（招待講演）

漢陽大学校・早稲田大学共同シンポジウム 2002
マイクロ・ナノファブリケーションの現状・将来と電気化学に対する期待(招待講演）

電気化学会第38回境界領域における電気化学セミナー 2002
ナノテクノロジー立国を目指す早稲田大学の取り組み(招待講演）

日本化学会北海道支部、電気化学会北海道支部主催講演 2002
ナノテクノロジーと化学(招待講演）

日本化学会/化学教育講習会 2002
日本の製造業再生を託し得るナノテクノロジー

かながわテクノ会会報かながわテクノニュース平成14年10月号、vol. 27 2002
Our Approach to Promote Nanotechnology(招待講演)

上海大学講演 2002
酸化初期過程の計算機実験

早大材研2000年度教育プログラム 2001
Novel process for high-density buried nanopyramid array fabrication by means of dopant ion implantation and wet etching

Japanese Journal of Applied Physics 40;4B,pp.2837-2839 2001

DOI
Intial Oxidation Process of Si(111) Simulated by Using a Parallel PC System

SEMICONDUCTOR TECHNOLOGY(ISTC2001) 1;pp.242-247 2001
現実的なナノテクノロジーへの私たちの提案(特別講演)

学振マイクロビームアナリシス第141委員会第104回研究会 2001
シングルイオン注入法の開発とその応用(招待講演)

（財）ひょうご科学技術協会 2001
Nucleation site of Cu on the H-terminated Si(111) surface

Physical Review B 64;pp.115406-1～115406-6 2001
現実的なナノテクノロジーを目指す私たちの提案(招待講演)

21世紀起業研究会 2001
現実的なナノテクノロジーを目指す私たちの取り組み(招待講演)

三井業際研第5回ナノテクノロジー応用開発委員会 2001
Simple Fabrication of Silicon Nanopyramids for High Performance Field Emitter Array

Extended ABSTRACTS OF THE 2000 INTERNATIONAL CONFERENCE ON SOLID STATE DEVICES AND MATERIALS pp.578-579 2001
High-temperature real-time observation of surface defects induced by single ion irradiation using scanning-tunneling-microscope/ion-gun combined system

JVST B 19;5,pp.1989-1994 2001

DOI
Fabrication of Adenosine Triphosphate-molecule Recognition Chip by Means of Bioluminous Enzyme Luciferase

Japanese Journal of Applied Physics 40;10B,pp.L1135-L1137 2001

DOI
現実的なナノテクノロジーを目指す早大COEグループの取り組み

早大理工学部マイクロ技術研究会第35回講演会 2001
現実的なナノテクノロジーを目指す私たちの取り組み(招待講演)

科学技術振興事業団戦略的基礎研究推進事業第2回鯉沼戦略研究会 2001
究極のもの作りの”技”－ナノテクノロジーへの私たちの挑戦（招待講演）

日本化学会北海道支部北見地区講演会 2001
Fabrication of Nanostructure Arrays and Their Application(招待講演)

第6回中日薄膜シンポジウム(学振131委員会)/昆明、中国 2001
The physics and chemistry of SiO2 and the Si-SiO2 interface

Ed. H. Z. Massud, I. J. R. Baumvol, M. Hirose and E.. H. Poindexter pp. 319-330 2000
Simple nanostructuring on Si surfaces by means of focused beam patterning and wet etching

Appleied Surface Science 162/163; pp. 599-603 2000

DOI
Simple fabrication of high density concave nanopyramid array (NPA) on Si surface

Appleied Surface Science 159/160; pp. 481-485 2000

DOI
Nucleation and grouwth of Cu clusters on highly oriented pyrolytic graphite observed with and in situ electrochemical scanning tunneling microscope

Appleied Surface Science 162/163; pp. 662-665 2000

DOI
Modeling of SiO2/Si(001) structure including step and terrace configurations

Appleied Surface Science 162/163; pp. 116-121 2000

DOI
High-temperature real-time observation of surface defects induced by single ion irradiation using scanning-tunneling-microscope/ion-gun combined system

J. Vac. Sci. Technol. B 2000

DOI
Flat-band voltage control of a back-gate MOSFET by single ion implantation

162-163; pp. 499-503 2000

DOI
Reduction of fluctuation in semiconductor conductivity by one-by-one ion implantation of dopant atoms

Japanese Journal Applied Physics 39; pp. L265-L268 2000

DOI
New process for Si nanopyramid array (NPA) fabrication by means of ion beam irradiation and wet etching

Japanese Journal Applied Physics 39; pp. 2186-2188 2000

DOI
Formation and annihilation of various stacking-fault half units in dimer-adatom-stacking-fault structures on quenched Si(111) surfaces

Physical Review B 61; pp. 15577-15580 2000

DOI
Kinetics of dimer-adatom-stacking fault reconstruction on laser quenched Si(111) surfaces

Physical Review B 62; pp. 2546-2551 2000

DOI
Simple process for buried nanopyramid array (BNPA) fabrication by means of dopant ion implantatin and dual wet etching

Extended abstracts of the 2000 international conference on solid state devices and materials 2000
High-density nanoetchpit-array fabrication on Si surface using ultrathin SiO2 mask

Japanese Journal Applied Physics 39; pp. 5352-5355 2000

DOI
SiO2/Si(001) 界面構造の大規模モデリングと初期酸化過程のシミュレーション

学振ナノプロープテクノロジー第167委員会 2000
Nanoscale surface modification of Si for practical nanofabrication

Abstracts of the 3rd international symposium on advanced science and technology of Si materials (Hawai/USA) JSPS 2000
薄膜シリコン酸化膜中に残る秩序構造の実体

学振「超高純度材料における表面安定化と初期酸化」研究開発専門委員会 2000
Effect of environmental O-2 on the dynamical process of the Si(111)'1 x 1' -> 7 x 7 structural phase transition

K Shimada, S Katsube, T Ishimaru, H Kawada, Ohdomari, I

SURFACE SCIENCE 433 460 - 464 1999.08

　View Summary

The effect of environmental O-2 On the dynamical process of the Si(111)'1 x 1' --> 7 x 7 structural phase transition has been investigated. In a macroscopic view, growth of the 7 x 7 DBS structure on the quenched surface after pulsed laser irradiation was monitored in-situ with RHEED under different O-2 pressures. In an atomic scale view, the nxn DAS domain growth was observed with high temperature STILI. It has been found that the oxides formed in the '1 x 1' matrix or phase boundary between n x n DAS-1 x 1 and the n x n domain boundary is responsible for the suppression of the 7 x 7 growth. Under the higher O-2 pressure, not only suppression of the 7 x 7 growth, but also erosion of the 7 x 7 took place. The threshold O-2 pressure, which suppresses the 7 x 7 domain growth but does not attack the 7 x 7 domains themselves, was higher for the specimen kept at 600 degrees than that at 465 degrees C because of fewer phase boundaries in the former. (C) 1999 Elsevier Science B.V. All rights reserved.

DOI
Si(111)-n×n構造についての新しい実験事実とその解釈

真空 42: 6, pp.603-607 1999

DOI
Consideraton on the Quantitativeness of Reflection High Energy Electron Diffraction Intensity as a Tool to Monitor the Coverage of the Si(111)Surface by 7x7 Domains

Japanese Journal Applied Physics 38;2A, pp.877-880. 1999

DOI
Novel Interatomic Potential Energy Function for Si, O Mixed Systems

Japanese Journal Applied Physics 38: 4A, pp.L366-L369 1999

DOI
Modeling of SiO₂/Si(100) interface structure by using extended Stillinger-Weber potential

Thin Solid Films 343-344, pp.370-373 1999

DOI
Dominant role of corner holes in the decomposition process of silicon islands on Si(111) surfaces

Japanese Journal Applied Physics 38: 4A, pp.1858-1862 1999

DOI
Control of metal nano-structure morphology by means of applied Si potential

Applied Surface Science 144-145, pp.476-479 1999

DOI
Quantitative characterization of ion-induced SiO₂/Si interface traps by means of MeV He single-ion irradiation

Journal of Applied Physics 85: 11, pp.7814-7818 1999

DOI
Influence of secondary electron detection efficiency on controllability of dopant ion number in single ion implantation

Japanese Journal Applied Physics 38: 6A, pp.3419-3421 1999

DOI
Nano-fabricated CDW by ion-beam irradiation

Synthetic Metals 103, pp.2234-2237 1999

DOI
Rearragement of dimers in a dimer-adatom-stacking fault structure on an Si(111) surface

Surface Science 433-435, pp.401-404 1999

DOI
Size changes of n×n stacking-fault half units of dimer-adatom-stacking-fault structures on quenched Si(111) surfaces

Physical Review B 60: 19, pp.13592-13597 1999

DOI
Nano-fabrication of CDW and its negative resistance phenomenon

Journal de Physique IV 9, pp.175-177 1999
Single-ion detection using nuclear track detector CR-39 plastic

Review of Scientific Instruments 70: 12, pp.4536-4538 1999

DOI
Nucleation and Growth of Cu adsorbates on hydrogen-terminated Si(111) surface in solution

Japanese Journal Applied Physics 38: 12A, pp.6860-6863 1999

DOI
Three-dimensinal site dependence of single-ion-induced charge collection at a p-n junction - role of funneling and diffusion processes under different ion energy

Journal of Applied Physics 83, pp3413-3418 1998

DOI
Stepwise Change in Gibbs Free Energy Curve Observed in Si(111) DAS Domain Growth

Applied Surface Science 130-132, pp.18-22 1998

DOI
Reactivity of O₂ with Si(111) Surfaces with Different Surface Structures

Applied Surface Science 130-132, pp.170-175 1998

DOI
Effects of Fixed Particles on Periodic Adatom Arrangements on Si(111)Unreconstructed Surfaces

Applied Surface Science 130-132, pp.6-12 1998

DOI
Key technologies of a focused ion beam system for single ion implantation

Journal of Vacuum Science & Technology B 16, pp.2479-2483 1998

DOI
Current Status of Single Ion Implantation

Journal of Vacuum Science & Technology B 16 ;4, pp.2489-2493 1998

DOI
Influence of Oxygen on the Formation of Si(111) 7x7 Domain Studied by Scanning Tunneling Microscopy

Physical Review B 58;15, pp.9863-9866 1998

DOI
Morphology Control of Cu Clusters Formed on H-Si(111) Surface in Solution by Si Potential

Japanese Journal Applied Physics 37;11A, L1333-L1335 1998

DOI
シングルイオン照射とその応用

放射線 23,pp25-34 1997
Theoretical investigation on the formation process of the stacking-fault triangle in the Si(111)-7x7 structure

Surface Science 394, pp119-128 1997

DOI
Quantitative characterization of Si/SiO2 interface traps induced by energetic ions by means of single ion microprobe and single ion beam induced charge imaging

Applied Surface Science 117-118, pp171-175 1997

DOI
Monte Carlo study on formation of periodic structures on Si(111) surfaces

Surface Science 389,pp375-381 1997

DOI
Mechanism of H₂ desorption from H-terminated Si(001) surfaces

Applied Surface Science 117-118,pp67-71 1997

DOI
Development of single-ion implantation - controllability of implantedion number

Applied Surface Science 117-118,pp677-683 1997

DOI
Damage and contamination free fabrication of thin Si wires with highly controlled feature size

Applied Surface Science 117-118,pp684-689 1997

DOI
Consideration of atom movement during Si surface reconstruction

Phase Transitions 62, pp245-258 1997

DOI
Estimation of spatial extent of a defect cluster in Si induced by single ion irradiation

Japanese Journal of Applied Physics 36,ppL708-710 1997

DOI
シングルイオン注入と電気化学反応を用いたウェハスケールテクノロジー

電子通信学会研究技報 ED-97-80,pp35-40 1997
Influence of near-surface defects in Si induced by reactive ion etching on the electrical properties of the Pt/n-Si interface

Japanese Journal of Applied Physics 36,pp6682-6686 1997

DOI
大学における研究室運営の－例

電子通信情報学会誌/電子通信情報学会 79 1996
半導体デバイスへのシングルイオン照射効果

放射線と産業/放射線照射振興協会 69 1996
Dynamic growth steps of nxn dimer-adatom-stacking-fault domains on the quenched Si(111) surface

Physical Review B／The American Physical Society 53 1996

DOI
Quantitative investigation of localized ion irradiation effects in nMOSFET using single ion microprobe

Appl. Phys. Lett.／The American Institute of Physics 68 1996
Quantitative analysis of radiation induced Si/SiO₂interface defects by means of MeV He single ion irradiation

Appl. Phys. Lett.／The American Institute of Physics 68 1996

DOI
Nonscalability of Alpha-Particle-Induced Charge Collection Area

Jpn. J. Appl. Phys.／応用物理学会 35 1996

DOI
Radiation immunity of pMOSFETs and nMOSFETs examined by means of MeV He single ion microprobe

Appl. Surf. Sci.／Elsevier Science 104-105 1996
Quantitative analysis of degradation in Schottky diode characteristics induced by single ion implantation

Appl. Surf. Sci.／Elsevier Science 104 1996

DOI
Origin of buckling-dimer-row formation of Si(001) surfaces

Physical Review B／The American Physical Society 54 1996

DOI
STM observation of "craters" on graphite surface induced by single ion implantation

Appl. Surf. Sci.／Elsevier Science 107 1996

DOI
Dynamic features in generation and disappearance of Si(111)-7x7 domains

Appl. Surf. Sci.／Elsevier Science 107 1996

DOI
シングルイオン注入法の実現と固体物性制御への応用

大学と学生／文部省 379 1996
Quantitative estimation of generation rates of Si/SiO₂ interface defects by MeV He single ion irradiation

IEEE Trans. Nucl. Sci.／IEEE Inc. 43 1996

DOI
Evaluation of Soft-Error Hardness of DRAMs under Quasi-Heavy Ion Irradiation using He Single Ion Microprobe

IEEE Trans. Nucl. Sci.／IEEE Inc. 43 1996

DOI
Changes in transition temperature of the Si(111) 1x1-7x7 phase transition observed under various oxygen environments

Surface Science Letters/Elsevier Science Publishers B.V. 328 1995

DOI
サイエンスとテクノロジーの協同のための一提案

表面科学/日本表面科学会 16 1995
Evidence for the leading role of the stacking-fault triangle in the Si(111) 1x1→7x7 phase transition

Physical Review B/The American Physical Society 51 1995

DOI
High-Temperature Scanning Tunneling Microscopy (STM) Observation of Metastable Structures on Quenched Si(111) Surfaces

Japan Journal of Applied Physics /応用物理学会 34 1995

DOI
Single ion implantation

OHDOMARI Iwao

OYOBUTURI 64 ( 8 ) 777 - 781 1995

DOI CiNii
Criticl Domain Size of the 7x7 Structure for Nucleation and growth on Si(111) Quenched Surfaces

Physical Review Letters/The American Physical Society 75 1995

DOI
Effect of the adatom presence on stabilizing Si(111) nxn dimer-adatom-stacking fault Structures

Physical Review B/The American Physical Society 52 1995

DOI
Simple fabrication of nanopyramid array (NPA) on Si surface by means
文部省科学研究費補助金特別推進研究「シングルイオン注入法の実現と固体物性制御への応用」の成果報告の場として、「単粒子制御国際シンポジウム」（早大国際共同研究）を1996年11月11日～13日に早大国際会議場で開催した。延べ225名の参加者を得て、活発な議論を行った。

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Industrial Property Rights

ゆらぎを制御した半導体装置

Patent

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特開2001-023917
シリコン微細加工方法と該方法を用いて製造した表面性状制御多目的シリコン基板

Patent

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特開2001-015484
高精細シングルイオン抽出方法及び該方法を適用した高精細シングルイオン注入装置及び方法

Patent

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特開2001-015059

Internal Special Research Projects

単一イオン注入による細胞機能修飾

2008 品田　賢宏, 秋本　崇之

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　本研究では、治療効果が報告されているAuイオンに注目し、細胞への照射効果を検証した。最終的には、がん細胞増殖抑制、もしくは死滅効果を有する元素を探索し、がん治療に有用な知見を得ることを目的としている。凍結細胞の高真空環境耐性を確認したことを受けて、筋芽細胞を約-150度に保持した状態でAuイオン注入を試み、倒立顕微鏡による形態観察とATP計測をによるviability評価を行った。注入量は、1個の細胞当たり1,000～50,000個である。　光学顕微鏡による形態観察では、照射前後において細胞状態に変化が見られず、凍結、真空環境への曝露、イオン照射、解凍後も原形を止めていることを確認した。細胞のviabilityを示すATP量について、Auイオンを注入した細胞では、未注入と比較し、約10～20%向上することが判明した。培養液のみのサンプルにAuイオンを注入した場合、ATP量はゼロであることから注入されたAuイオンは上昇に寄与していないと言える。Auイオン注入量増加と共にATP量が減少する傾向が認められ、これはイオン照射ダメージによると考えられる。一方、Asイオンを注入すると、逆に約10～20%ATP量が減少することを確認しており、注入イオンがATP量の増減に影響したことは明らかである。ただし、ATPの産生あるいは消費のどちらに作用したかは現在のところ不明である。ATPは生物エネルギーとして細胞内の至る所で消費されており、消費増進・抑制の原因を特定するのは容易ではない。幸いATPを産生するミトコンドリアの膜電位をリアルタイムで監視することが可能であり、Auイオン注入によって膜電位の上昇が認められれば、電子伝達系の促進に寄与しATP上昇要因を特定可能である。　本研究によって、古くから経験的に薬として使われてきたAuの細胞レベルでの機能改質効果を初めて検証したと考える。高度な半導体ナノ物性制御手段として確立されたイオン注入技術によって細胞機能を定量的に修飾する手法を初めて開発した成果である。
単粒子制御と応用国際シンポジウム

1996 Y.Nishi, J.Boland, V.G.Lifshits, 鈴木　克生, K.G.Lynn, 谷川　庄一郎, 上殿　明良, R.S.Becker, 青野正和, John R.A.Cleaver, F.Saris, 大道英樹

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　本シンポジウムは、文部省科学研究費補助分担金特別推進研究「シングルイオン注入法の実現と固体物性制御への応用」（研究代表者大泊巌早稲田大学教授、研究分担者谷川庄一郎筑波大学教授、1993～1996年度）の成果発表の場として1996年11月11日（月）～11月13日（水）の３日間にわたり、早稲田大学国際会議場において開催した。シンポジウムの統一テーマ「単粒子制御」は、シングルイオン注入を基盤にしたものであるが、上記特別推進研究の重要な柱の一つであるシリコン表面の研究から、シングルイオン注入による表面修飾を用いるウェハスケールナノ構造形成の芽が生まれたことを考慮して、１個の電子も視野の中に含めた。国内外の関連分野の著名な研究者と事前に緊密な連絡をとり、下記の招待講演者を決定した。　Y.Nishi (Texas Instruments， USA)　T. Engel (Univ. Washington，USA)　J. Boland (Univ. North Carolina， USA)　V.G. Lifshits (IAPU， Russia)　H. Hasegawa (Hokkaido Univ.， Japan)　John R.A.Cleaver (Cambridge Univ.， UK)　T. Ogino (NTT， Japan)　K. G. Lynn (Washington State Univ.， USA)　R. Suzuki (Electrotechnical Lab.， Japan)　T. Kurihara (KEK， Japan)　I. Yamada (Kyoto Univ.， Japan)　H. Ohmichi (JAERI， Japan)　A. Toriumi (Toshiba， Japan)　S. Namba (Nagasaki Inst. Appl. Sci.， Japan)　プログラムは、これらの人々による招待講演ならびに上記特別推進研究の研究組織メンバーによる講演ならびにポスター掲示の形式をとった。延べ225名の参加者を得て、連日活溌な討議を行った。