小柴 佳子 (コシバ ケイコ)

写真a

所属

理工学術院 情報生産システム研究センター

職名

助手

 

研究キーワード 【 表示 / 非表示

  • 金属ナノ粒子接合

  • メッキ接合

論文 【 表示 / 非表示

  • An Embedded SiC Module with Using NMPB Interconnection for Chevron Shaped Cu Lead and Electrodes

    Naoki Fukui, Keiko Koshiba, Itaru Miyazaki, Isamu Morisako, Tomonori Iizuka, Tomoya Itose, Masayuki Hikita, Rikiya Kamimura, Kohei Tatsumi

    Proceedings - Electronic Components and Technology Conference   2020-June   2226 - 2229  2020年06月

     概要を見る

    © 2020 IEEE. As for the IGBT power device based on Si used for the vehicle, the performance limit of the Si semiconductor has been pointed out, and the SiC semiconductor has been attracting attention as a next-generation semiconductor. The SiC semiconductor has advantages such as a wider band gap, a larger breakdown electric field, and high temperature operation (about 300 ° C.). If these features can be maximized, a SiC power semiconductor module that can be significantly improved in efficiency, downsized, and operable in a high-temperature environment as compared with a Si semiconductor can be more widely implemented.In this study, two sets of SiC-MOS and SiC-SBD devices are embedded in a ceramic substrate, and their electrodes and the copper electrodes of the substrate are interconnected by NMPB (Nickel Micro-plating Bonding) method, so that one-leg prototype inverter modules of a highly heat-resistant and ultra-small size (47x30x1.3mm) could be manufactured. The NMPB method is a technology that we have originally developed to connect a chip electrode and a lead formed in a chevron shape by Ni plating. High-temperature operation and excellent switching characteristics of the SiC power module were demonstrated.

    DOI

  • High temperature resistant packaging technology for SiC power module by using Ni micro-plating bonding

    Kohei Tatsumi, Isamu Morisako, Keiko Wada, Minoru Fukuomori, Tomonori Iizuka, Nobuaki Sato, Koji Shimizu, Kazutoshi Ueda, Masayuki Hikita, Rikiya Kamimura, Naoki Kawanabe, Kazuhiko Sugiura, Kazuhiro Tsuruta, Keiji Toda

    2019 IEEE 69TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC)     1451 - 1456  2019年

     概要を見る

    There is an increasing expectation to incorporate silicon carbide (SiC) as inverter power modules for hybrid electric vehicles (HEVs) and electric vehicles (EVs). In order to maximize the performance of SiC devices, new packaging technologies that can realize high-temperature heat resistance by replacing solder joint or Al wire bonding, have been strongly demanded. In order to meet these demands, we have developed a new interconnection technology named Nickel micro-plating bonding (NMPB), that enables the interconnection in a narrow gap between electrodes of SiC devices and substrates via our newly designed lead frame, whose lead surface is formed into chevron shape. The plating bath for NMPB is a sulfamic acid bath consisting of nickel sulfamate and several additives, and was specifically prepared to plate narrow areas at the bonding interface without plating defects. It was found that when columnar crystal grains grow from both facing electrode surfaces, a strong bond without defects such as micro-voids at the interface is obtained. The bonding strength of NMPB was confirmed by shear test to be higher than that of Pb free solder joints and not to deteriorate even after high temperature storage (HTS) tests at 250 degrees C for 1000hrs and after 1000cycle thermal cycle tests (TCTs, 250 degrees C/-45 degrees C). The NMPB was applied to the manufacture of one leg SiC inverter power module using two pairs of SiC MOS-FETs and SBDs, which were interconnected with a newly designed lead frame for double sided cooling structure. After molding resin copper heat spreaders were formed on the outer surfaces of both sides of the NMPB leads by additive method. Our newly developed SiC power module showed stable I-V characteristics over 250 degrees C and lower switching loss. The reliability of the modules was confirmed by TCTs and power cycle tests.

    DOI

  • High temperature resistant interconnection for SiC power devices using Ni micro-electroplating and Ni nano particles

    Kohei Tatsumi, Yasunori Tanaka, Tomonori Iizuka, Keiko Wada, Minoru Fukumori, Isamu Morisako, Yoon Jeongbin, Norihiro Murakawa

    2018 7TH ELECTRONIC SYSTEM-INTEGRATION TECHNOLOGY CONFERENCE (ESTC)    2018年

     概要を見る

    Recently there are high expectations for incorporating silicon carbide (SiC) devices as power modules in hybrid electric vehicles (HEV) and electric vehicles (EV). The need fir new bonding technologies, which can deliver high-temperature thermal resistance that replaces solder bonding or Al wire bonding, has been strongly expected in order to maximize the performance of SiC power device. We developed a new micro plating interconnection technology named Nickel Micro Plating Bonding (NMPB) which enables the interconnection in a narrow space between electrodes and SiC devices via our new lead frame formed in chevron shape. As for the bonding strength of NMPB, sufficient joint strength value is confirmed by shear test. We also newly proposed low-temperature nickel nanoparticle sintering to form die bonding connections. We have confirmed that bonding at a bonding temperature of 400 degrees C or lower is possible, and that it is a bonding having long-term high heat resistance. We implemented heat resistant mounting of SiC schottky barrier diode (Slip) on the TO247 type package and confirmed the I-V characteristics even after the high temperature storage at 300 degrees C without any significant degradation. We clarified that these methods had adequate potential as an advanced heat resistant package in comparison with conventional interconnections.

  • フェーズフィールド法による高温安定性フェライト鋼における窒素吸収・相変態挙動の解析

    光井 啓, 小柴 佳子, 大沼 孝

    鉄と鋼   101 ( 6 ) 336 - 342  2015年

     概要を見る

    The behavior of diffusion and phase transformation in a high temperature stable ferritic stainless steel (SUS444) nitrogen-absorbed at 1450 K for 4 hr under 0.4 MPa N2 gas was investigated with EPMA mapping. While Cr content in the nitrogen absorption layer (NA layer: γ phase) increased, Mo discharged from NA layer was enriched in the grain boundary of α/γ. Using a 1D-phase field simulation (PFS), the phenomenon during the NA treatment in the Fe-19Cr-2Mo-0.5Mn-N alloy was discussed. In the case of PFS with impurity diffusion (lattice diffusion) coefficients in Fe, since the diffusion velocity in γ phase was smaller than that of α phase, concentration distribution between NA layer and matrix α phase is caused by local phase equilibrium in depending on the composition of NA layer. Additionally, diffusion of substitutional atoms is slower than the growing velocity of NA layer that is depended on nitrogen diffusivity. This is the reason why Cr content in the NA layer fluctuates and why the average compositions in α phase and NA layer has the opposite trend with thermodynamic calculated and experimental results. On the other hand, in the case of the simulation under Dγ > Dα in consideration of the grain boundary diffusion of substitutional elements, the segregation behavior of solute elements was in good agreement with the results of EPMA mapping. Thus, it was confirmed that not only the diffusion of N atoms but also the grain boundary diffusion contributes greatly to the growing phenomenon of NA layer in a high stable ferritic stainless steel.

    DOI CiNii

  • Preferential growth orientation of laser-patterned LiNbO<inf>3</inf> crystals in lithium niobium silicate glass

    T. Komatsu, K. Koshiba, T. Honma

    Journal of Solid State Chemistry   184 ( 2 ) 411 - 418  2011年02月

     概要を見る

    Dots and lines consisting of LiNbO3 crystals are patterned on the surface of 1CuO40Li2O32Nb2O528SiO 2 (mole ratio) glass by irradiations of continuous-wave Nd:YAG laser (wavelength: λ=1064 nm), diode laser (λ=795 nm), and Yb:YVO 4 fiber laser (λ=1080 nm), and the feature of laser-patterned LiNbO3 crystal growth is examined from linearly polarized micro-Raman scattering spectrum measurements. LiNbO3 crystals with the c-axis orientation are formed at the edge parts of the surface and cross-section of dots. The growth direction of an LiNbO3 along the laser scanning direction is the c-axis. It is proposed that the profile of the temperature distribution in the laser-irradiated region and its change along laser scanning would be one of the most important conditions for the patterning of crystals with a preferential growth orientation. Laser irradiation giving a narrow width is also proposed to be one of the important factors for the patterning of LiNbO3 crystal lines with homogeneous surface morphologies. © 2010 Elsevier Inc. All rights reserved.

    DOI

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Misc 【 表示 / 非表示

  • 遷移金属原子加熱法によるLi2O-Nb2O5-SiO2ガラスへのLiNbO3結晶パターニング

    小柴 佳子, 本間 剛, 小松 高行

    日本セラミックス協会 年会・秋季シンポジウム 講演予稿集   2007 ( 0 ) 536 - 536  2007年

     概要を見る

    レーザーを用いてガラスに屈折率変化や結晶を誘起させる微細加工技術は、現代の光通信網の発達に関与する光導波路や光スイッチなどの光デバイスの作製技術として期待できる。我々は、遷移金属含有ガラスへ波長1064nmのNd:YAGレーザーを照射することで、遷移金属原子の無輻射緩和による発熱を利用して結晶を誘起させるという遷移金属原子加熱法を見出した。本研究では、この遷移金属原子加熱法を用いて、CuO-Li2O-Nb2O5-SiO2 ガラスに強誘電性結晶LiNbO3 の結晶ラインを誘起させ、結晶の形態・配向・二次光非線形性を調査した。

    DOI CiNii

特定課題研究 【 表示 / 非表示

  • ニッケルメッキを用いた新規高耐熱実装技術の開発

    2020年  

     概要を見る

     電気自動車や電鉄車両、送配電システムなどの電力変換機器にパワーデバイスが用いられている。これらの高効率化・小型化に向け、デバイスの半導体材料をSiからSiCに替えた次世代デバイスの開発が行われているなかで、SiCの高温動作特性を発揮するために従来の半導体実装で用いられてきた半田に替わる高耐熱実装技術が求められている。情報生産システム研究科・先進材料研究室(巽研究室)では電解Niメッキを実装手法とするNiマイクロメッキボンディング(NMPB)の開発に取り組んできた。NMPBは向かい合わせた被接合材両方向からNiメッキを成長させて接合する。本研究ではメッキ浴組成および電流密度がメッキ成長挙動や組織形態に与える影響を評価した。