Updated on 2022/05/25

写真a

 
Tomita, Motohiro
 
Affiliation
Faculty of Science and Engineering, School of Fundamental Science and Engineering
Job title
Assistant Professor(non-tenure-track)
Mail Address
メールアドレス

Education

  • 2012.04
    -
    2015.03

    Meiji University   Graduate School of Science and Technology   Doctoral Program of Electrical Engineering  

  • 2010.04
    -
    2012.03

    Meiji University   Graduate School of Science and Technology   Master's Program of Electrical Engineering  

  • 2006.04
    -
    2010.03

    Meiji University   School of Science and Technology   Department of Electrical and Electronic Engineering  

  • 2003.04
    -
    2006.03

    東京都立武蔵野北高校  

Degree

  • 2015.03   Meiji University   Doctor of Engineering

Research Experience

  • 2021.04
    -
    Now

    Waseda University   Comprehensive Research Organization   Junior Researcher

  • 2019.04
    -
    2021.03

    Waseda University   Organization for University Research Initiatives   Junior Researcher

  • 2018.04
    -
    2019.03

    Waseda University   Research Organization for Nano & Life Innovation   Junior Researcher

  • 2015.04
    -
    2018.03

    Japan Society for the Promotion of Science   Research Fellowships for Young Scientists PD

  • 2012.04
    -
    2015.03

    Japan Society for the Promotion of Science   Research Fellowships for Young Scientists DC1

  • 2010.04
    -
    2012.03

    Meiji University   School of Science and Technology   Teaching Assistant

▼display all

Professional Memberships

  •  
     
     

    THE JAPAN SOCIETY OF APPLIED PHYSICS

 

Research Areas

  • Electric and electronic materials   Semiconductor material

Research Interests

  • EBSP

  • Phonon

  • Super-resolution

  • Electron back-scattering pattern

  • Raman spectroscopy

  • Molecular dynamics

  • Termoelectric

  • Thermal transport

  • Group IV alloy

  • Silicon

  • Semiconductor

▼display all

Papers

  • Modeling, simulation, fabrication, and characterization of a 10-μ W/cm2 class si-nanowire thermoelectric generator for IoT applications

    Motohiro Tomita, Shunsuke Oba, Yuya Himeda, Ryo Yamato, Keisuke Shima, Takehiro Kumada, Mao Xu, Hiroki Takezawa, Kohhei Mesaki, Kazuaki Tsuda, Shuichiro Hashimoto, Tianzhuo Zhan, Hui Zhang, Yoshinari Kamakura, Yuhhei Suzuki, Hiroshi Inokawa, Hiroya Ikeda, Takashi Matsukawa, Takeo Matsuki, Takanobu Watanabe

    IEEE Transactions on Electron Devices   65 ( 11 ) 5180 - 5188  2018.11  [Refereed]

    Authorship:Lead author

     View Summary

    © 2018 IEEE. We propose a planar device architecture compatible with the CMOS process technology as the optimal current benchmark of a Si-nanowire (NW) thermoelectric (TE) power generator. The proposed device is driven by a temperature gradient that is formed in the proximity of a perpendicular heat flow to the substrate. Therefore, unlike the conventional TE generators, the planar short Si-NWs need not be suspended on a cavity structure. Under an externally applied temperature difference of 5 K, the recorded TE power density is observed to be 12 μW/cm2 by shortening the Si-NWs length and suppressing the parasitic thermal resistance of the Si substrate. The demonstration paves a pathway to develop cost-effective autonomous internet-of-things applications that utilize the environmental and body heats.

    DOI

  • Evaluating the Relationship between Phonon and Thermal Properties of Group IV Alloys Using Molecular Dynamics Simulation

    M. Tomita, M. Ogasawara, T. Terada, T. Watanabe

    ECS Transactions   86 ( 7 ) 337 - 345  2018.09  [Refereed]

    Authorship:Lead author

    DOI

  • Development of interatomic potential of Ge(1-x-y)SixSny ternary alloy semiconductors for classical lattice dynamics simulation

    Motohiro Tomita, Masataka Ogasawara, Takuya Terada, Takanobu Watanabe

    Japanese Journal of Applied Physics   57 ( 4 ) 04FB04-1 - 04FB04-7  2018.04  [Refereed]

    Authorship:Lead author

     View Summary

    We provide the parameters of Stillinger-Weber potentials for GeSiSn ternary mixed systems. These parameters can be used in molecular dynamics (MD) simulations to reproduce phonon properties and thermal conductivities. The phonon dispersion relation is derived from the dynamical structure factor, which is calculated by the space-time Fourier transform of atomic trajectories in an MD simulation. The phonon properties and thermal conductivities of GeSiSn ternary crystals calculated using these parameters mostly reproduced both the findings of previous experiments and earlier calculations made using MD simulations. The atomic composition dependence of these properties in GeSiSn ternary crystals obtained by previous studies (both experimental and theoretical) and the calculated data were almost exactly reproduced by our proposed parameters. Moreover, the results of the MD simulation agree with the previous calculations made using a time-independent phonon Boltzmann transport equation with complicated scattering mechanisms. These scattering mechanisms are very important in complicated nanostructures, as they allow the heat-transfer properties to be more accurately calculated by MD simulations. This work enables us to predict the phonon- and heat-related properties of bulk group IV alloys, especially ternary alloys.

    DOI

  • 10μW/cm2-Class High Power Density Silicon Thermoelectric Energy Harvester Compatible with CMOS-VLSI Technology

    Motohiro Tomita, Shunsuke Ohba, Yuya Himeda, Ryo Yamato, Keisuke Shima, Takehiro Kumada, Mao Xu, Hiroki Takezawa, Kohei Mesaki, Kazuaki Tsuda, Shuichiro Hashimoto, Tianzhuo Zhan, Hui Zhang, Yoshinari Kamakura, Yuhei Suzuki, Hiroshi Inokawa, Hiroya Ikeda, Takashi Matsukawa, Takeo Matsuki, Takanobu Watanabe

    2018 Symposium on VLSI Technology   2018-June   93 - 94  2018  [Refereed]

    Authorship:Lead author

     View Summary

    © 2018 IEEE. A best benchmark of Si-nanowire (NW) thermoelectric (TE) power generator has been achieved by our proposed planar device architecture compatible with CMOS process technology. The TE power density corresponds to 12 μW/cm2, which is recorded at an externally applied temperature difference of only 5 K. The demonstration opens up a pathway to cost effective autonomous internet of things (IoT) application utilizing environmental and body heats.

    DOI

  • Development of interatomic potential of group IV alloy semiconductors for lattice dynamics simulation

    M. Tomita, A. Ogura, T. Watanabe

    ECS Transactions   75 ( 8 ) 785 - 794  2016  [Refereed]

    Authorship:Lead author

     View Summary

    We have newly developed the interatomic potential of Si, Ge or Ge, Sn mixed systems to reproduce the lattice constant, phonon frequency, and phonon dispersion relations in the bulk pure group IV crystal and group IV alloys by molecular dynamics (MD) simulation. The phonon dispersion relation is derived from the dynamical structure factor which is calculated by the space-time Fourier transform of atomic trajectories in MD simulation. The newly designed potential parameter set reproduces the experimental data of lattice constant and phonon frequency in Si, Ge, Sn, and SiGe. Furthermore, the Sn concentration dependence of the phonon frequency, which are not yet clarified, is calculated with three type assumptions of lattice constant in GeSn alloy. This work enables us to predict the elastic and phonon related properties of bulk group IV alloys.

    DOI

  • Tensor evaluation of anisotropic stress relaxation in mesa-shaped sige layer on si substrate by electron back-scattering pattern measurement: Comparison between raman measurement and finite element method simulation

    Motohiro Tomita, Masaya Nagasaka, Daisuke Kosemura, Koji Usuda, Tsutomu Tezuka, Atsushi Ogura

    Japanese Journal of Applied Physics   52 ( 4 ) 04CA06-1 - 04CA06-5  2013.04  [Refereed]

    Authorship:Lead author

     View Summary

    A strained SiGe layer will be used in next-generation transistors to improve device performance along with device scaling. However, the stress relaxation of the SiGe layer may be inevitable in nanodevices, because the SiGe layer is processed into a nanostructure. In this study, we evaluated the anisotropic stress relaxation in mesa-shaped strained SiGe layers on a Si substrate by electron backscattering pattern (EBSP) measurement. Moreover, we compared the results of EBSP measurement with those of anisotropic Raman measurement and finite element method (FEM) simulation. As a result, the anisotropic stress relaxation obtained by Raman spectroscopy was confirmed by EBSP measurement. Additionally, we obtained a good correlation between the results of EBSP measurement and FEM simulation. The xx and yy stresses were markedly relaxed and the zz and xz stresses were concentrated at the SiGe layer edges. These stresses were mostly relaxed in the distance range from the SiGe layer edges to 200 nm. Therefore, in a SiGe nanostructure with a scale of less than 200 nm, stress relaxation is inevitable. The results of EBSP and Raman measurements, and FEM simulation show a common tendency. We believe that EBSP measurement is useful for the evaluation of stress tensors and is complementary to Raman measurement. © 2013 The Japan Society of Applied Physics.

    DOI

  • Tensor Evaluation of Stress Relaxation Profile in Strained SiGe Nanostructures on Si Substrate

    M. Tomita, D. Kosemura, K. Usuda, A. Ogura

    ECS Transactions   53 ( 1 ) 207 - 214  2013  [Refereed]

    Authorship:Lead author

     View Summary

    A strained SiGe layer will be used in next-generation transistors to improve device performance along with device scaling. However, the stress relaxation of SiGe layer may be inevitable in nanodevices, because the SiGe layer is processed into nanostructure. In this study, we evaluated the stress relaxation profiles in mesa-shaped strained SiGe layers on Si substrate by electron back scattering pattern (EBSP), super-resolution Raman spectroscopy (SRRS) measurements, and finite element method (FEM) simulation. As a result, the stress relaxation profile with high spatial resolution was obtained by SRRS and EBSP measurements. The precise shear stress profiles were also obtained by EBSP measurement. Moreover, these stress profiles were reproduced by FEM simulation. The spatial resolution of EBSP and SRRS were estimated less than 100 nm. Thus, it is prospective to evaluate the precise stress relaxation profile in the sub-100 nm order devices by EBSP and SRRS measurements, respectively.

    DOI

  • Super-Resolution Raman Spectroscopy by Digital Image Processing

    Motohiro Tomita, Hiroki Hashiguchi, Takuya Yamaguchi, Munehisa Takei, Daisuke Kosemura, Atsushi Ogura

    JOURNAL OF SPECTROSCOPY   2013 ( 459032 ) 1 - 9  2013  [Refereed]

    Authorship:Lead author

     View Summary

    We demonstrate the results of a strain (stress) evaluation obtained from Raman spectroscopy measurements with the super-resolution method (the so-called super-resolution Raman spectroscopy) for a Si substrate with a patterned SiN film (serving as a strained Si sample). To improve the spatial resolution of Raman spectroscopy, we used the super-resolution method and a high-numerical-aperture immersion lens. Additionally, we estimated the spatial resolution by an edge force model (EFM) calculation. One- and two- dimensional stress distributions in the Si substrate with the patterned SiN film were obtained by super-resolution Raman spectroscopy. The results from both super-resolution Raman spectroscopy and the EFM calculation were compared and were found to correlate well. The best spatial resolution, 70 nm, was achieved by super-resolution Raman measurements with an oil immersion lens. We conclude that super-resolution Raman spectroscopy is a useful method for evaluating stress in miniaturized state-of-the-art transistors, and we believe that the super-resolution method will soon be a requisite technique.

    DOI

  • Evaluation of Strained Silicon by Electron Back Scattering Pattern Compared with Raman Measurement and Edge Force Model Calculation

    Motohiro Tomita, Daisuke Kosemura, Munehisa Takei, Kohki Nagata, Hiroaki Akamatsu, Atsushi Ogura

    Key Engineering Materials   470   123 - 128  2011  [Refereed]

    Authorship:Lead author

     View Summary

    Global and local strained-Si samples, namely strained-Si on insulator (SSOI) wafer and a Si substrate with a patterned SiN film were each evaluated by electron backscattering pattern (EBSP). In the EBSP measurements for SSOI, biaxial tensile stresses (biaxial tensile strains and compressive strain perpendicular to the surface) were obtained, whose values were consistent with those obtained by UV-Raman spectroscopy. One-dimensional stress distributions in the Si substrate with the patterned SiN film were obtained by EBSP, UV-Raman spectroscopy with a deconvolution method, and edge force model calculation. The results were well consistent with each other. EBSP allows us to measure stress and strain in the patterned SiN sample with 150-nm wide space. Furthermore, anisotropic biaxial stress including shear stress was also obtained by EBSP.

    DOI

  • Evaluation of Strained-Silicon by Electron Backscattering Pattern Measurement: Comparison Study with UV-Raman Measurement and Edge Force Model Calculation

    Motohiro Tomita, Daisuke Kosemura, Munehisa Takei, Kohki Nagata, Hiroaki Akamatsu, Atsushi Ogura

    JAPANESE JOURNAL OF APPLIED PHYSICS   50 ( 1 ) 010111-1 - 010111-8  2011.01  [Refereed]

    Authorship:Lead author

     View Summary

    We demonstrate the results of strain (stress) evaluation obtained from electron backscattering pattern (EBSP) measurement for samples of a strained Si-on-insulator (SSOI) and a Si substrate with a patterned SiN film. Two-dimensional stress distributions were obtained in 40 x 40 mu m(2) areas of the SSOI. The biaxial stress state was also obtained in the SSOI. Furthermore, clear cross-hatch contrast was observed, especially in the distribution of shear stress S-xy, in contrast to with the other distributions of normal stress S-xx and S-yy. One- and two-dimensional stress distributions in the Si substrate with the patterned SiN film were also obtained from EBSP measurement. Moreover, the results were compared with those of UV-Raman measurement and edge force model calculation, and were found to have a good correlation with each other. EBSP measurement was used to measure the complicated biaxial stress including the shear stress in a sample with a 150-nm-wide space pattern. We can conclude that EBSP measurement is a useful method for precisely measuring stress with high spatial resolution. (c) 2011 The Japan Society of Applied Physics

    DOI

  • Control of anisotropic conduction of carbon nanotube sheets and their use as planar-type thermoelectric conversion materials

    Masamichi Matsumoto, Ryohei Yamaguchi, Keisuke Shima, Masakazu Mukaida, Motohiro Tomita, Takanobu Watanabe, Takao Ishida, Tsuyohiko Fujigaya

    Science and Technology of Advanced Materials   22 ( 1 ) 272 - 279  2021.12  [Refereed]

     View Summary

    The large anisotropic thermal conduction of a carbon nanotube (CNT) sheet that originates from the in-plane orientation of one-dimensional CNTs is disadvantageous for thermoelectric conversion using the Seebeck effect since the temperature gradient is difficult to maintain in the current flow direction. To control the orientation of the CNTs, polymer particles are introduced as orientation aligners upon sheet formation by vacuum filtration. The thermal conductivities in the in-plane direction decrease as the number of polymer particles in the sheet increases, while that in the through-plane direction increases. Consequently, a greater temperature gradient is observed for the anisotropy-controlled CNT sheet as compared to that detected for the CNT sheet without anisotropy control when a part of the sheet is heated, which results in a higher power density for the planar-type thermoelectric device. These findings are quite useful for the development of flexible and wearable thermoelectric batteries using CNT sheets.

    DOI

  • Dependency of a localized phonon mode intensity on compositional cluster size in SiGe alloys

    Sylvia Yuk Yee Chung, Motohiro Tomita, Junya Takizawa, Ryo Yokogawa, Atsushi Ogura, Haidong Wang, Takanobu Watanabe

    AIP Advances   11 ( 7 ) 075017 - 075017  2021.07

    DOI

  • Thermal conductivity and inelastic X-ray scattering measurements on SiGeSn polycrystalline alloy

    Yosuke Shimura, Kako Iwamoto, Ryo Yokogawa, Motohiro Tomita, Hirokazu Tatsuoka, Hiroshi Uchiyama, Atsushi Ogura

    Japanese Journal of Applied Physics   60 ( SB ) SBBF11 - SBBF11  2021.05  [Refereed]

    DOI

  • Designing a bileg silicon-nanowire thermoelectric generator with cavity-free structure

    Md Mehdee Hasan Mahfuz, Motohiro Tomita, Shuhei Hirao, Kazuaki Katayama, Kaito Oda, Takashi Matsukawa, Takeo Matsuki, Takanobu Watanabe

    Japanese Journal of Applied Physics   60 ( SB ) SBBF07 - SBBF07  2021.05  [Refereed]

    DOI

  • Thermal deposition method for p–n patterning of carbon nanotube sheets for planar-type thermoelectric generator

    Ryohei Yamaguchi, Taiki Ishii, Masamichi Matsumoto, Angana Borah, Naoki Tanaka, Kaito Oda, Motohiro Tomita, Takanobu Watanabe, Tsuyohiko Fujigaya

    Journal of Materials Chemistry A   9 ( 20 ) 12188 - 12195  2021  [Refereed]

     View Summary

    <p>Thermal deposition of n-dopant onto SWCNT sheet (p-type) using patterned mask can fabricate p–n patterns with high special resolution. Thermoelectric generator using patterned SWCNT sheets exhibited power density of 60 nW cm−2 at Δ<italic>T</italic> = 25 °C.</p>

    DOI

  • 4-4 Effect of Unit-cell Arrangement on Performance of Multi-stage-planar Cavity-free Unileg Thermoelectric Generator Using Silicon Nanowires

    Katsuki Abe, Kaito Oda, Motohiro Tomita, Takeo Matsuki, Takashi Matsukawa, Takanobu Watanabe

    2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)    2020.09

    DOI

  • Observation of an Unidentified Phonon Peak in SiGe Alloys and Superlattices Using Molecular Dynamics Simulation

    Sylvia Yuk Yee Chung, Motohiro Tomita, Ryo Yokogawa, Atsushi Ogura, Takanobu Watanabe

    ECS Transactions   98 ( 5 ) 533 - 546  2020.09  [Refereed]

    DOI

  • Effect of the Thermal Boundary Resistance in Metal/Dielectric Thermally Conductive Layers on Power Generation of Silicon Nanowire Microthermoelectric Generators

    Tianzhuo Zhan, Shuaizhe Ma, Zhicheng Jin, Hiroki Takezawa, Kohei Mesaki, Motohiro Tomita, Yen-Ju Wu, Yibin Xu, Takashi Matsukawa, Takeo Matsuki, Takanobu Watanabe

    ACS Applied Materials & Interfaces   12 ( 30 ) 34441 - 34450  2020.07  [Refereed]

     View Summary

    Copyright © 2020 American Chemical Society. In microthermoelectric generators (μTEGs), parasitic thermal resistance must be suppressed to increase the temperature difference across thermocouples for optimum power generation. A thermally conductive (TC) layer is typically used in μTEGs to guide the heat flow from the heat source to the hot junction of each thermocouple. In this study, we investigate the effect of the thermal boundary resistance (TBR) in metal/dielectric TC layers on the power generation of silicon nanowire (SiNW) μTEGs. We prepared various metal/adhesion/dielectric TC layers using different metal, adhesion, and dielectric layers and measured the thermal resistance using the frequency-domain thermoreflectance method. We found that the thermal resistance was significantly different, mainly due to the TBR of the metal/dielectric interfaces. Interface characterization highlights the significant role of the interfacial bonding strength and interdiffusion in TBR. We fabricated a prototype SiNW-μTEG with different TC layers for testing, finding that the power generation increased significantly when the thermal resistance of the TC layer was lowered. This study helps to understand the underlying physics of thermal transport at interfaces and provides a guideline for the design and fabrication of μTEGs to enhance power generation for effective energy harvesting.

    DOI PubMed

  • Anomalous low energy phonon dispersion in bulk silicon-germanium observed by inelastic x-ray scattering

    R. Yokogawa, H. Takeuchi, Y. Arai, I. Yonenaga, M. Tomita, H. Uchiyama, T. Watanabe, A. Ogura

    Applied Physics Letters   116 ( 24 ) 242104 - 242104  2020.06  [Refereed]

    DOI

  • Effect of Thermal Boundary Resistance between the Interconnect Metal and Dielectric Interlayer on Temperature Increase of Interconnects in Deeply Scaled VLSI

    Tianzhuo Zhan, Kaito Oda, Shuaizhe Ma, Motohiro Tomita, Zhicheng Jin, Hiroki Takezawa, Kohei Mesaki, Yen Ju Wu, Yibin Xu, Takashi Matsukawa, Takeo Matsuki, Takanobu Watanabe

    ACS Applied Materials and Interfaces   12 ( 19 ) 22347 - 22356  2020.05  [Refereed]

     View Summary

    Copyright © 2020 American Chemical Society. Temperature increase in the continuously narrowing interconnects accelerates the performance and reliability degradation of very large scale integration (VLSI). Thermal boundary resistance (TBR) between an interconnect metal and dielectric interlayer has been neglected or treated approximately in conventional thermal analyses, resulting in significant uncertainties in performance and reliability. In this study, we investigated the effects of TBR between an interconnect metal and dielectric interlayer on temperature increase of Cu, Co, and Ru interconnects in deeply scaled VLSI. Results indicate that the measured TBR is significantly higher than the values predicted by the diffuse mismatch model and varies widely from 1 × 10-8 to 1 × 10-7 m2 K W-1 depending on the liner/barrier layer used. Finite element method simulations show that such a high TBR can cause a temperature increase of hundreds of degrees in the future VLSI interconnect. Characterization of interface properties shows the significant importance of interdiffusion and adhesion in TBR. For future advanced interconnects, Ru is better than Co for heat dissipation in terms of TBR. This study provides a guideline for the thermal management in deeply scaled VLSI.

    DOI PubMed

  • Direct Observation of Dielectric Breakdown Path at Silica/Epoxy Interface with a Micro-gap Electrode Device

    Rina Sankawa, Takuya Onishi, Kohei Takahashi, Motohiro Tomita, Kotaro Mura, Takahiro Nakamura, Tetsuo Yoshimitsu, Takahiro Imai, Takanobu Watanabe

    IEEJ Transactions on Fundamentals and Materials   140 ( 2 ) 64 - 69  2020.02  [Refereed]

    DOI

  • Evaluation of thermal conductivity characteristics in Si nanowire covered with oxide by UV Raman spectroscopy

    Ryo Yokogawa, Motohiro Tomita, Takanobu Watanabe, Atsushi Ogura

    JAPANESE JOURNAL OF APPLIED PHYSICS   58   SDDF04-1 - SDDF04-5  2019.06  [Refereed]

     View Summary

    Thermal conductivity characteristics of Si nanowires (SiNWs) treated with thermal oxidation before and after a subsequent Ar+ ion irradiation process were evaluated by UV Raman spectroscopy, in order to investigate the impact of interfacial oxide-induced lattice disorder. Laser-powerd-ependent Raman spectroscopy showed that the rise in temperature caused by laser heating of SiNWs is suppressed by the Ar+ ion irradiation process. It is considered that this suppression of an increase in temperature is caused by the Ar+ ion irradiation breaking bonds at the SiO2/SiNW interface. These results indicate that not only roughness and defects but also bonding characteristics at SiO2/SiNW interfaces should be carefully considered to achieve a low value of thermal conductivity for next-generation SiNW thermoelectric devices. To realize phonon scattering in SiNWs efficiently, optimization of thermal oxidation is necessary. (c) 2019 The Japan Society of Applied Physics

    DOI

  • Cavity-free micro thermoelectric energy harvester with Si nanowires

    T. Watanabe, M. Tomita, T. Zhan, K. Shima, Y. Himeda, R. Yamato, T. Matsukawa, T. Matsuki

    ECS Transactions   89 ( 3 ) 95 - 110  2019  [Refereed]

     View Summary

    © 2019 Electrochemical Society Inc.. All rights reserved. We present a new design of silicon-based micro-thermoelectric generator, which utilizes silicon nanowires as the thermoelectric leg. It is driven by a steep temperature gradient exuding around a heat flow perpendicular to the substrate, and the silicon nanowires are not suspended on a cavity etched on the substrate. The power density is scalable by shortening the silicon nanowire to sub-μm length, which was experimentally demonstrated and tens of µW/cm2-class power generation was achieved at an externally applied temperature difference of only 5 K. A numerical discussion shows that the thermoelectric power can be drastically enhanced by suppressing the thermal resistance at the entire substrate. Thus, there is a plenty of room at the micro- or submicrometric scales for realizing thermal energy harvesting devices with high power densities.

    DOI

  • Evaluation of Laterally Graded Silicon Germanium Wires for Thermoelectric Devices Fabricated by Rapid Melting Growth

    R. Yokogawa, S. Hashimoto, K. Takahashi, S. Oba, M. Tomita, M. Kurosawa, T. Watanabe, A. Ogura

    ECS Transactions   86 ( 7 ) 87 - 93  2018.09  [Refereed]

    DOI

  • Miniaturized planar Si-nanowire micro-thermoelectric generator using exuded thermal field for power generation

    Tianzhuo Zhan, Ryo Yamato, Shuichiro Hashimoto, Motohiro Tomita, Shunsuke Oba, Yuya Himeda, Kohei Mesaki, Hiroki Takezawa, Ryo Yokogawa, Yibin Xu, Takashi Matsukawa, Atsushi Ogura, Yoshinari Kamakura, Takanobu Watanabe

    SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS   19 ( 1 ) 443 - 453  2018.05  [Refereed]

     View Summary

    For harvesting energy from waste heat, the power generation densities and fabrication costs of thermoelectric generators (TEGs) are considered more important than their conversion efficiency because waste heat energy is essentially obtained free of charge. In this study, we propose a miniaturized planar Si-nanowire micro-thermoelectric generator (SiNW-TEG) architecture, which could be simply fabricated using the complementary metal-oxide-semiconductor-compatible process. Compared with the conventional nanowire TEGs, this SiNW-TEG features the use of an exuded thermal field for power generation. Thus, there is no need to etch away the substrate to form suspended SiNWs, which leads to a low fabrication cost and well-protected SiNWs. We experimentally demonstrate that the power generation density of the SiNW-TEGs was enhanced by four orders of magnitude when the SiNWs were shortened from 280 to 8m. Furthermore, we reduced the parasitic thermal resistance, which becomes significant in the shortened SiNW-TEGs, by optimizing the fabrication process of AlN films as a thermally conductive layer. As a result, the power generation density of the SiNW-TEGs was enhanced by an order of magnitude for reactive sputtering as compared to non-reactive sputtering process. A power density of 27.9 nW/cm(2) has been achieved. By measuring the thermal conductivities of the two AlN films, we found that the reduction in the parasitic thermal resistance was caused by an increase in the thermal conductivity of the AlN film and a decrease in the thermal boundary resistance.

    DOI

  • Probing spatial heterogeneity in silicon thin films by Raman spectroscopy

    Hideyuki Yamazaki, Mitsuo Koike, Masumi Saitoh, Mitsuhiro Tomita, Ryo Yokogawa, Naomi Sawamoto, Motohiro Tomita, Daisuke Kosemura, Atsushi Ogura

    SCIENTIFIC REPORTS   7  2017.11  [Refereed]

     View Summary

    Raman spectroscopy is a powerful technique for revealing spatial heterogeneity in solid-state structures but heretofore has not been able to measure spectra from multiple positions on a sample within a short time. Here, we report a novel Raman spectroscopy approach to study the spatial heterogeneity in thermally annealed amorphous silicon (a-Si) thin films. Raman spectroscopy employs both a galvanomirror and a two-dimensional charge-coupled device detector system, which can measure spectra at 200 nm intervals at every position along a sample in a short time. We analyzed thermally annealed a-Si thin films with different film thicknesses. The experimental results suggest a correlation between the distribution of the average nanocrystal size over different spatial regions and the thickness of the thermally annealed a-Si thin film. The ability to evaluate the average size of the Si nanocrystals through rapid data acquisition is expected to lead to research into new applications of nanocrystals.

    DOI

  • Enhanced nickelidation rate in silicon nanowires with interfacial lattice disorder

    Shuichiro Hashimoto, Ryo Yokogawa, Shunsuke Oba, Shuhei Asada, Taiyu Xu, Motohiro Tomita, Atsushi Ogura, Takashi Matsukawa, Meishoku Masahara, Takanobu Watanabe

    JOURNAL OF APPLIED PHYSICS   122 ( 14 ) 144305-1 - 144305-7  2017.10  [Refereed]

     View Summary

    We demonstrate that the nickelidation (nickel silicidation) reaction rate of silicon nanowires (SiNWs) surrounded by a thermally grown silicon dioxide (SiO2) film is enhanced by post-oxidation annealing (POA). The SiNWs are fabricated by electron beam lithography, and some of the SiNWs are subjected to the POA process. The nickelidation reaction rate of the SiNWs is enhanced in the samples subjected to the POA treatment. Ultraviolet Raman spectroscopy measurements reveal that POA enhances compressive strain and lattice disorder in the SiNWs. By considering these experimental results in conjunction with our molecular dynamics simulation analysis, we conclude that the oxide-induced lattice disorder is the dominant origin of the increase in the nickelidation rate in smaller width SiNWs. This study sheds light on the pivotal role of lattice disorders in controlling metallic contact formation in SiNW devices. Published by AIP Publishing.

    DOI

  • Evaluation of controlled strain in silicon nanowire by UV Raman spectroscopy

    Ryo Yokogawa, Shuichiro Hashimoto, Shuhei Asada, Motohiro Tomita, Takanobu Watanabe, Atsushi Ogura

    JAPANESE JOURNAL OF APPLIED PHYSICS   56 ( 6 ) 06GG10-1 - 06GG10-5  2017.06  [Refereed]

     View Summary

    The evaluation of strain states in silicon nanowires (Si NWs) is important not only for the surrounding gate field-effect transistors but also for the thermoelectric Si NW devices to optimize their electric and thermoelectric performance characteristics. The strain states in Si NWs formed by different oxidation processes were evaluated by UV Raman spectroscopy. We confirmed that a higher tensile strain was induced by the partial presence of a tetraethyl orthosilicate (TEOS) SiO2 layer prior to the thermal oxidation. Furthermore, in order to measure biaxial stress states in Si NWs accurately, we performed water-immersion Raman spectroscopy. It was confirmed that the anisotropic biaxial stresses in the Si NWs along the length and width directions were compressive and tensile states, respectively. The Si NW with a TEOS SiO2 layer on top had a larger strain than the Si NW surrounded only by thermal SiO2. (C) 2017 The Japan Society of Applied Physics

    DOI

  • 分子動力学法を用いた2元系IV-IV族混晶半導体のフォノン物性の再現と予測

    富田基裕, 小椋厚志, 渡邉孝信

    電子情報通信学会技術研究報告   116 ( 472 ) 61 - 66  2017.02

    Authorship:Lead author

  • A Scalable Si-based Micro Thermoelectric Generator

    Takanobu Watanabe, Shuhei Asada, Taiyu Xu, Shuichiro Hashimoto, Shunsuke Ohba, Yuya Himeda, Ryo Yamato, Hui Zhang, Motohiro Tomita, Takashi Matsukawa, Yoshinari Kamakura, Hiroya Ikeda

    2017 IEEE ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM)     86 - 87  2017  [Refereed]

     View Summary

    A new device architecture of micro thermoelectric generator (mu-TEG) is proposed. The mu-TEG utilizes silicon nanowires as the thermoelectric (TE) material, and it can be fabricated by the CMOS-compatible process. It is driven by an "evanescent thermal field" exuding around a heat flow perpendicular to the substrate. We demonstrate experimentally that the TE power increases in the shorter TE leg lengths. The results show that the TE power density is scalable by miniaturizing and integrating the proposed structure.

    DOI

  • Study on High Spatial Resolution Multiaxial Stress Evaluation in Si and SiGe Fine Structure

    Motohiro Tomita

    Meiji University    2015.03  [Refereed]

  • Biaxial stress evaluation in SiGe epitaxially grown on Ge substrate by oil-immersion raman spectroscopy

    K. Takeuchi, D. Kosemura, S. Yamamoto, M. Tomita, K. Usuda, N. Sawamoto, A. Ogura

    ECS Transactions   69   81 - 87  2015.01  [Refereed]

     View Summary

    © The Electrochemical Society. Anisotropic biaxial stress states in the high-Ge concentration Si1-xGex/Ge nanostructures were evaluated by oil-immersion Raman spectroscopy. Phonon deformation potentials (PDPs) are indispensable to convert the Raman frequency shift to stress in the Si1-xGex. Therefore, we investigated the accurate PDPs (p and q) of the Si1-xGex with the high Ge concentration by oil-immersion Raman spectroscopy. Using the derived PDPs, the clear uniaxial stress relaxation in the strained Si1-xGex nanostructure was observed.

    DOI

  • On the origin of the gate oxide failure evaluated by Raman spectroscopy

    R. Yokogawa, M. Tomita, T. Mizukoshi, T. Hirano, K. Kusano, K. Sasaki, A. Ogura

    ECS Transactions   66 ( 4 ) 237 - 243  2015  [Refereed]

     View Summary

    The metal-oxide-semiconductor-field-effect-transistor (MOSFET) has been miniaturized for the high performance large-scale integrated-circuit (LSI). However, in the ultimately miniaturized MOSFET, the gate oxide failure with high leakage current is inevitable. In this study, we evaluated the origin of the gate oxide failure by Raman spectroscopy in conjunction with optical beam induced resistance change (OBIRCH) analysis. We confirmed the higher Raman intensity than the other positions at the gate oxide failure position, where the OBIRCH analysis shows the light emission. Moreover, we found that the origin on the gate oxide failure was high tensile strain in the gate polycrystalline silicon electrode.

    DOI

  • Evaluation of Anisotropic Biaxial Stress in Si1-xGex/Ge Mesa-Structure by Oil-Immersion Raman Spectroscopy

    S. Yamamoto, K. Takeuchi, R. Yokogawa, M. Tomita, D. Kosemura, K. Usuda, A. Ogura

    ECS Transactions   66 ( 4 ) 39 - 45  2015  [Refereed]

    DOI

  • Evaluation of Anisotropic Biaxial Stress in Thin Strained-SiGe Layer Using Surface Enhanced Raman Spectroscopy

    S. Yamamoto, D. Kosemura, M. Tomita, S. Che Mohd Yusoff, T. Kijima, R. Imai, K. Takeuchi, R. Yokogawa, K. Usuda, A. Ogura

    ECS Transactions   64 ( 6 ) 841 - 847  2014  [Refereed]

     View Summary

    We applied surface-enhanced Raman spectroscopy (SERS) to the excitation of transversal optical (TO) phonos in strained SiGe. The SERS technique can greatly enhance the Raman signal owing to metal-surface plasmon resonance. Furthermore, the electrical field includes a large amount of z-polarization, which can excite TO phonons. In this study, we evaluated anisotropic biaxial stress state in thin strained-SiGe layer on a Si substrate with the SERS technique.

    DOI

  • Characterization of anisotropic strain relaxation after isolation for strained SGOI and SiGe/Si structure with newly developed high-NA and oil-immersion Raman method

    Koji Usuda, Tsutomu Tezuka, Daisuke Kosemura, Motohiro Tomita, Atsushi Ogura

    SOLID-STATE ELECTRONICS   83   46 - 49  2013.05  [Refereed]

     View Summary

    Local anisotropic strain relaxation at the free edge of the stained SiGe layers after isolation of strained SiGe layers was evaluated using the high-NA and oil-immersion Raman method adopting high numerical aperture (NA:1.4) lens and oil immersion techniques. It was confirmed that forbidden optical phonon mode (TO) can be effectively excited with the technique, and that the anisotropic strain measurement was realized for the strained-SiGe layers. It was found that the strain was more significantly relax in St-SGOI than in St-SiGe around each edge. The result implies that the relaxation mechanism of the SiGe mesas on the SiO2-Box layer and on the Si substrate may be different from each other. (C) 2013 Elsevier Ltd. All rights reserved.

    DOI

  • Measurement of Anisotropic Biaxial Stresses in Si1-xGex/Si Mesa Structures by Oil-Immersion Raman Spectroscopy

    Daisuke Kosemura, Motohiro Tomita, Koji Usuda, Tsutomu Tezuka, Atsushi Ogura

    JAPANESE JOURNAL OF APPLIED PHYSICS   52 ( 4 ) 04CA05-1 - 04CA05-5  2013.04  [Refereed]

     View Summary

    Anisotropic biaxial stress states in Si1-xGex/Si mesa structures were evaluated by oil-immersion Raman spectroscopy. Using a high-numerical-aperture lens, the electrical field component perpendicular to the surface, i.e., z-polarization, can be obtained. The z-polarization enables the excitation of the forbidden optical phonon mode, i.e., the transverse optical (TO) phonon mode, even under the backscattering geometry from (001)-oriented diamond-type crystals. The anisotropic biaxial stress evaluation of Si1-xGex was considered difficult compared with that of Si, because many unknown parameters exist for Si1-xGex, e. g., phonon deformation potentials (PDPs), the Ge concentration x, and the factor of Raman shift on x. In this study, PDPs and the Ge concentration in Si1-xGex were investigated in detail. As a result, using precise PDPs and x, a clear dependence of anisotropic biaxial stress states in Si1-xGex on the mesa structure shape was observed. (C) 2013 The Japan Society of Applied Physics

    DOI

  • Study on Stress Tensor Evaluation in Si Crystal by Raman Spectroscopy and Electron Back-scattering Pattern

    Motohiro Tomita

    Meiji University    2012.03  [Refereed]

  • Evaluation of Anisotropic Strain Relaxation in Strained Silicon-on-Insulator Nanostructure by Oil-Immersion Raman Spectroscopy

    Daisuke Kosemura, Motohiro Tomita, Koji Usuda, Atsushi Ogura

    JAPANESE JOURNAL OF APPLIED PHYSICS   51 ( 2 ) 02BA03-1 - 02BA03-7  2012.02  [Refereed]

     View Summary

    Precise stress measurements have been desired in order to apply strained Si substrates to next-generation transistors. Oil-immersion Raman spectroscopy enables the evaluation of the anisotropic stress state in the strained Si layer of the strained Si substrate even under (001)-oriented Si backscattering geometry. First, we found that the phonon deformation potentials (PDPs) reported by Anastassakis et al. in 1990 was the most valid among the three sets of PDP previous reported. Using these PDPs, the precise Raman measurements of biaxial stress in strained Si-on-insulator (SSOI) nanostructures were performed. The biaxial stresses sigma(xx) and sigma(yy) decreased with the decrease in SSOI width and length, which was consistent with the finite element method calculation. (C) 2012 The Japan Society of Applied Physics

    DOI

  • Characterization of anisotropic strain relaxation after mesa isolation for strained SGOI and SiGe/Si structure with newly developed high-NA and oil-immersion Raman method

    Koji Usuda, Daisuke Kosemura, Motohiro Tomita, Atsushi Ogura, Tsutomu Tezuka

    2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings     26 - 27  2012  [Refereed]

     View Summary

    We have investigated strain relaxation of strained SiGe layers after mesa isolation with a newly developed Raman method with a high number aperture (NA) lens and an immersion technique. It was confirmed that forbidden optical phonon mode (TO) can be effectively excited with the high-NA (1.4) lens and oil immersion technique, and that the non-destructive, and anisotropic strain measurement was successively realized for the strained-SiGe layers. On the other hand, it was found that the strain was more significantly relax in St-SGOI mesas than in St-SiGe mesas. The result implies that the relaxation mechanism in the strained SiGe/Si layer is different from that in St-SGOI layer. © 2012 IEEE.

    DOI

  • 原子スケールで平坦なSiO2/Si酸化膜界面歪の評価

    服部真季, 小瀬村大亮, 武井宗久, 永田晃基, 赤松弘彬, 富田基裕, 水上雄輝, 橋口裕樹, 山口拓也, 小椋厚志, 諏訪智之, 寺本章伸, 服部健雄, 大見忠弘, 小金澤智之

    電子情報通信学会技術研究報告   110 ( 241 ) 71 - 75  2010.10

  • 先端LSIにおけるチャネル歪評価

    小椋厚志, 小瀬村大亮, 武井宗久, 富田基裕

    電子情報通信学会技術研究報告   110 ( 241 ) 1 - 6  2010.10

▼display all

Books and Other Publications

  • Advanced Aspects of Spectroscopy

    D. Kosemura, M. Tomita, K. Usuda, A. Ogura( Part: Joint author, Stress Measurements in Si and SiGe by Liquid-Immersion Raman Spectroscopy)

    InTech  2012.08 ISBN: 9789535107156

Misc

Awards

  • Poster Award

    2021.07   Phonon Enigineering Research Group   Displacement Analysis of Low Energy Phonon Mode in SiGe by Using Molecular Dynamics

    Winner: Motohiro Tomita

Research Projects

  • Development of Thermal Conductivity Modulation Technique by Controlling Si/SiO2 Interface State

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research Grant-in-Aid for Early-Career Scientists

    Project Year :

    2020.04
    -
    2022.03
     

    Motohiro Tomita

  • Demonstration of Planar Scalable Thermoelectric Power Generator Architecture

    Japan Science and Technology Agency  JST-CREST

    Project Year :

    2019.04
    -
    2022.03
     

    Takanobu Watanabe, Yoshinari Kamakura, Tsuyohiko Fujigaya, Masashi Kurosawa

  • Development of Silicon-Based Thermoelectric Device Utilizing Computational Phononics

    Japan Science and Technology Agency  JST-CREST

    Project Year :

    2015.12
    -
    2019.03
     

    Takanobu Watanabe, Yoshinari Kamakura, Hiroya Ikeda

  • Study on Phonon Deformation Potential in Group IV Alloy by Molecular Dynamics Method

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research Grant-in-Aid for JSPS Fellows

    Project Year :

    2015.04
    -
    2018.03
     

    Motohiro Tomita

  • Study on Stress Tensor Evaluation in Si Crystal by Super-resolution Raman Spectroscopy and Finite Element Analysis

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research Grant-in-Aid for JSPS Fellows

    Project Year :

    2012.04
    -
    2015.03
     

    Motohiro Tomita

Presentations

  • ペルチェ効果とジュール発熱を含む等価回路モデルによる微小熱電変換デバイスの性能解析

    富田 基裕, 保科 拓海, 鎌倉 良成, 松木 武雄, 渡邉 孝信

    第68回応用物理学会春季学術講演会 

    Presentation date: 2021.03

  • SOI基板に形成したキャビティ・フリーSi細線のゼーベック係数の評価と検討

    富田 基裕, 片山 和明, 平尾 修平, 田邉 咲華, 松川 貴, 松木 武雄, 猪川 洋, 渡邉 孝信

    電子デバイス界面テクノロジー研究会 第26回研究会 

    Presentation date: 2021.01

  • 単結晶および多結晶Siナノワイヤを用いたプレーナ型熱電発電素子の性能比較

    富田 基裕, 武澤 宏樹, 目崎 航平, 五井 悠仁, 池田 浩也, 猪川 洋, 松川 貴, 松木 武雄, 渡邉 孝信

    第67回応用物理学会春季学術講演会 

    Presentation date: 2020.03

  • High Power Density Silicon Thermoelectric Generator - Optimum Design Toward Large-scale Integration -

    M. Tomita, K. Oda, T. Matsukawa, T. Matsuki, T. Watanabe  [Invited]

    International Conference on Materials and Systems for Sustainability 2019 

    Presentation date: 2019.11

  • Toward Large-scale Integration of Micro Thermoelectric Generator Using Si-nanowire

    M. Tomita, K. Oda, T. Matsukawa, T. Matsuki, T. Watanabe  [Invited]

    Annual Meeting of The Japan Society of Vacuum and Surface Science 2019 

    Presentation date: 2019.10

  • Evaluation of Multi-stage, Unileg, Si-nanowire Thermoelectric Generator with A Cavity-free and Planar Device Architecture

    M. Tomita, H. Takezawa, K. Mesaki, T. Matsukawa, T. Matsuki, T. Watanabe

    2019 International Conference on Solid State Devices and Materials 

    Presentation date: 2019.09

  • Unileg横型Siナノワイヤ熱電変換デバイスの多段直列化による電圧上昇

    富田基裕, 武澤宏樹, 目崎航平, 松川貴, 松木武雄, 渡邉孝信

    第80回応用物理学会秋季学術講演会 

    Presentation date: 2019.09

  • Optimum Thermal Design of Substrate for Realizing High Performance Cavity-free Planar Si Nanowire Micro-thermoelectric Generator

    M. Tomita, T. Matsukawa, T. Matsuki, T. Watanabe

    The 38th International Conference on Thermoelectrics 

    Presentation date: 2019.07

  • 横型Siナノワイヤ熱電変換デバイスにおけるSiO2絶縁膜/Si基板の最適厚さ設計

    富田基裕, 松川貴, 松木武雄, 渡邉孝信

    第66回応用物理学会春季学術講演会 

    Presentation date: 2019.03

  • 熱-電気等価回路モデルを用いた横型Siナノワイヤ熱電変換デバイスの効率評価

    富田基裕, 熊田剛大, 島圭佑, 詹天卓, 張慧, 松川貴, 松木武雄, 渡邉孝信

    電子デバイス界面テクノロジー研究会 ―材料・プロセス・デバイス特性の物理―(第24回研究会) 

    Presentation date: 2019.01

  • CMOSプロセスと親和性の高い10µW/cm2級プレーナ型Siナノワイヤ熱電発電デバイスの開発

    富田基裕, 大場俊輔, 姫田悠矢, 大和亮, 島圭佑, 熊田剛大, 徐茂, 武澤宏樹, 目崎航平, 津田和瑛, 橋本修一郎, 詹天卓, 張慧, 鎌倉良成, 鈴木悠平, 猪川洋, 池田浩也, 松川貴, 松木武雄, 渡邉孝信

    電子デバイス界面テクノロジー研究会 ―材料・プロセス・デバイス特性の物理―(第24回研究会) 

    Presentation date: 2019.01

  • 温度差5℃で動作するSiマイクロ熱電発電素子の開発

    富田基裕  [Invited]

    熱電発電の技術/研究開発と応用・適用動向 

    Presentation date: 2018.12

  • プレーナ型Siナノワイヤ熱電発電デバイスの排熱効率を向上する基板材料および貫通基板構造の検討

    富田基裕, 大場俊輔, 姫田悠矢, 大和亮, 島圭佑, 熊田剛大, 徐茂, 武澤宏樹, 目崎航平, 津田和瑛, 橋本修一郎, 詹天卓, 張慧, 鎌倉良成, 鈴木悠平, 猪川洋, 池田浩也, 松川貴, 松木武雄, 渡邉孝信

    Advanced Metallization Conference: Satellite Workshop 

    Presentation date: 2018.11

  • Evaluating the Relationship between Phonon and Thermal Properties of Group IV Alloys Using Molecular Dynamics Simulation

    M. Tomita, M. Ogasawara, T. Terada, T. Watanabe

    2018 Americas International Meeting on Electrochemistry and Solid State Science 

    Presentation date: 2018.10

  • 横型Siナノワイヤ熱電変換デバイスの熱エンジニアリング

    富田基裕, 熊田剛大, 島圭佑, 詹天卓, 張慧, 松川貴, 松木武雄, 渡邉孝信

    第79回応用物理学会秋季学術講演会 

    Presentation date: 2018.09

  • Substrate Heat Resistance Engineering for Realizing High Performance Si Nanowires Thermoelectric Generator

    M. Tomita, T. Kumada, K. Shima, T. Zhan, H. Zhang, T. Matsukawa, T. Matsuki, T. Watanabe

    2018 International Conference on Solid State Devices and Materials 

    Presentation date: 2018.09

  • CMOS-VLSI技術を応用した10μW/cm2級プレーナ型Siナノワイヤ熱電発電デバイスの開発

    富田基裕  [Invited]

    応用物理学会シリコンテクノロジー分科会第210回研究集会「先端CMOSデバイス・プロセス特集」 

    Presentation date: 2018.08

  • 10μW/cm2-Class High Power Density Silicon Thermoelectric Energy Harvester Compatible with CMOS-VLSI Technology

    M. Tomita, S. Ohba, Y. Himeda, R. Yamato, K. Shima, T. Kumada, M. Xu, H. Takezawa, K. Mesaki, K. Tsuda, S. Hashimoto, T. Zhan, H. Zhang, Y. Kamakura, Y. Suzuki, H. Inokawa, H. Ikeda, T. Matsukawa, T. Matsuki, T. Watanabe

    2018 Symposium on VLSI Technology 

    Presentation date: 2018.06

  • 分子動力学シミュレーションによるIV族混晶のフォノン物性の起源の調査

    富田基裕, 小笠原成崇, 渡邉孝信

    第65回応用物理学会春季学術講演会 

    Presentation date: 2018.03

  • 分子動力学法を用いた2元系IV-IV族混晶半導体の格子-フォノン物性の予測と評価

    富田基裕, 小笠原成崇, 寺田拓哉, 渡邉孝信

    電子デバイス界面テクノロジー研究会 ―材料・プロセス・デバイス特性の物理― (第23回研究会) 

    Presentation date: 2018.01

  • 分子動力学計算によるⅣ族混晶系の熱伝導シミュレーション

    富田基裕  [Invited]

    電気学会ナノエレクトロニクス新機能創出・集積化技術専門員会「半導体シミュレーション技術」 

    Presentation date: 2017.11

  • Development of Interatomic Potential of Ge(1-x-y)SixSny Ternary Alloy Semiconductors for Classical Lattice Dynamics Simulation

    M. Tomita, T. Watanabe

    2017 International Conference on Solid State Devices and Materials 

    Presentation date: 2017.09

  • 分子動力学法を用いたGeSiSn三元混晶内のフォノン物性予測と評価

    富田基裕, 小笠原成崇, 渡邉孝信

    第78回応用物理学会秋季学術講演会 

    Presentation date: 2017.09

  • 分子動力学法を用いたGeSnおよびSiSn混晶内のフォノン物性予測と評価

    富田基裕, 小椋厚志, 渡邉孝信

    第64回応用物理学会春季学術講演会 

    Presentation date: 2017.03

  • 分子動力学法を用いた2元系IV-IV族混晶半導体のフォノン物性の再現と予測

    富田基裕, 小椋厚志, 渡邉孝信

    電子デバイス研究会/シリコン材料・デバイス研究会「機能ナノデバイスおよび関連技術」 

    Presentation date: 2017.02

  • 分子動力学法を用いた2元系IV-IV族混晶半導体の格子-フォノン物性の予測と評価

    富田基裕, 小椋厚志, 渡邉孝信

    電子デバイス界面テクノロジー研究会 ―材料・プロセス・デバイス特性の物理― (第22回研究会) 

    Presentation date: 2017.01

  • Development and Verification of Interatomic Potential of Group IV Binary Alloy Semiconductors for Lattice Dynamics Simulation

    M. Tomita, A. Ogura, T. Watanabe

    7th International Symposium on Advanced Science and Technology of Silicon Materials 

    Presentation date: 2016.11

  • Development of Interatomic Potential of Group IV Alloy Semiconductors for Lattice Dynamics Simulation

    M. Tomita, A. Ogura, T. Watanabe

    Pacific Rim Meeting 2016 / 230th Electrochemical Society Meeting 

    Presentation date: 2016.10

  • 分子動力学法および分子軌道法を用いたGeSn混晶内のフォノン再現に関する考察

    富田基裕, 小椋厚志, 渡邉孝信

    第77回応用物理学会秋季学術講演会 

    Presentation date: 2016.09

  • 分子動力学法および分子軌道法を用いたSiGe混晶内のフォノン再現に関する考察

    富田基裕, 小椋厚志, 渡邉孝信

    第63回応用物理学会春季学術講演会 

    Presentation date: 2016.03

  • 分子動力学法および分子軌道法を用いたSiGe混晶内の原子間ポテンシャルに関する考察

    富田基裕, 小椋厚志, 渡邉孝信

    第76回応用物理学会秋季学術講演会 

    Presentation date: 2015.09

  • EBSP法を用いたSiGe/Geナノワイヤー構造に生じる応力緩和分布の高空間分解能測定

    富田基裕, 武内一真, 山本章太郎, 小瀬村大亮, 臼田宏治, 小椋厚志

    第76回応用物理学会秋季学術講演会 

    Presentation date: 2015.09

  • EBSP法を用いた微細な全Ge濃度域における歪SiGeメサ構造に生じる応力緩和分布の評価

    富田基裕, 小瀬村大亮, 臼田宏治, 小椋厚志

    第62回応用物理学会春季学術講演会 

    Presentation date: 2015.03

  • EBSP法を用いた微細な歪SiGeメサ構造に生じる応力緩和分布のGe濃度依存性評価

    富田基裕, 小瀬村大亮, 臼田宏治, 小椋厚志

    第75回応用物理学会秋季学術講演会 

    Presentation date: 2014.09

  • Evaluation of Stress Relaxation in Strained SiGe Wire by Two-dimensional Super-resolution Raman Spectroscopy

    M. Tomita, D. Kosemura, K. Usuda, T. Tezuka, A. Ogura

    24th International Conference on Raman Spectroscopy 

    Presentation date: 2014.08

  • Evaluation of Crystallinity Profile in Thin Poly-Si Layer by Raman Spectroscopy

    M. Tomita, H. Yasukawa, N. Sawamoto, D. Kosemura, H. Yamazaki, M. Tomita, K. Usuda, A. Ogura

    24th International Conference on Raman Spectroscopy 

    Presentation date: 2014.08

  • 超解像ラマン分光法による微細加工歪SiGe層に生じる応力緩和の高空間分解能2次元分布評価

    富田基裕, 小瀬村大亮, 臼田宏治, 小椋厚志

    第61回応用物理学会春季学術講演会 

    Presentation date: 2014.03

  • 有限要素法による異種の構造から導入される重畳応力の評価

    富田基裕, 小瀬村大亮, 小椋厚志

    第74回応用物理学会秋季学術講演会 

    Presentation date: 2013.09

  • Tensor Evaluation of Stress Relaxation Profile in Strained SiGe Nanostructures on Si Substrate

    M. Tomita, D. Kosemura, K. Usuda, A. Ogura

    223rd ECS Meeting 

    Presentation date: 2013.05

  • 有微細構造歪SiGe層に生じる応力緩和分布のテンソル評価

    富田基裕, 小瀬村大亮, 臼田宏治, 小椋厚志

    第60回応用物理学会春季学術講演会 

    Presentation date: 2013.03

  • Evaluation of Anisotropic Stress Relaxation in Mesa-shaped Strained Si Layer by Super-resolution Raman Spectroscopy and FEM Simulation

    M. Tomita, D. Kosemura, K. Usuda, T. Tezuka, A. Ogura

    6th International Symposium on Advanced Science and Technology of Silicon Materials 

    Presentation date: 2012.11

  • Tensor Evaluation of Anisotropic Stress Relaxation in Mesa-shaped SiGe Layer on Si Substrate by EBSP

    M. Tomita, M. Nagasaka, D. Kosemura, K. Usuda, T. Tezuka, A. Ogura

    2012 International Conference on Solid State Devices and Materials 

    Presentation date: 2012.09

  • 有限要素法による微細構造歪SSOI層の応力緩和に対する膜厚依存性の評価

    富田基裕, 小瀬村大亮, 臼田宏治, 手塚勉, 小椋厚志

    第73回応用物理学会秋季学術講演会 

    Presentation date: 2012.09

  • Evaluation of Stress Relaxation in Mesa-shaped Strained Si Layer by Super-resolution Raman Spectroscopy

    M. Tomita, D. Kosemura, K. Usuda, T. Tezuka, A. Ogura

    23rd International Conference on Raman Spectroscopy 

    Presentation date: 2012.08

  • 有限要素法による微細構造歪SiGe層の異方性応力緩和評価

    富田基裕, 小瀬村大亮, 臼田宏治, 小椋厚志

    春季第59 回応用物理学関係連合講演会 

    Presentation date: 2012.03

  • Evaluation of Anisotropic Stress Relaxation in Mesa-shaped Strained Si Layers by FEM Simulation

    M. Tomita, D. Kosemura, K. Usuda, T. Tezuka, A. Ogura

    International Conference on Development of Core Technologies for Green Nanoelectronics 

    Presentation date: 2012.03

  • 液浸技術および超解像技術を用いたラマン分光法の高空間分解能化

    富田基裕, 橋口裕樹, 山口拓也, 武井宗久, 小瀬村大亮, 小椋厚志

    秋季第72回 応用物理学会学術講演会 

    Presentation date: 2011.08

  • 有限要素シミュレーションおよびEBSP測定を用いたSi中の異方性応力に関する考察

    富田基裕, 小瀬村大亮, 武井宗久, 永田晃基, 赤松弘彬, 小椋厚志

    春季第58 回応用物理学関係連合講演会 

    Presentation date: 2011.03

  • Strain and stress tensor evaluation in global and local strained-Si by electron back scattering pattern

    M. Tomita, D. Kosemura, M. Takei, K. Nagata, H. Akamatsu, A. Ogura

    2010 International Conference on Solid State Devices and Materials 

    Presentation date: 2010.09

  • EBSP 法および超解像ラマン分光法による異方性2 次元応力の評価

    富田基裕, 小瀬村大亮, 武井宗久, 永田晃基, 赤松弘彬, 小椋厚志

    秋季第71回 応用物理学会学術講演会 

    Presentation date: 2010.09

  • Evaluation of Strained Silicon by electron back scattering pattern compared with Raman measurement and edge force model calculation

    M. Tomita, D. Kosemura, M. Takei, K. Nagata, H. Akamatsu, A. Ogura

    International Symposium on Technology Evolution for Silicon Nano-Electronics 

    Presentation date: 2010.06

  • EBSP法によるグローバル/ローカル歪Siの評価

    富田基裕, 小瀬村大亮, 武井宗久, 永田晃基, 赤松弘彬, 小椋厚志

    春季第57回応用物理学関係連合講演 

    Presentation date: 2010.03

  • Comparative Thermoelectric Performance Demonstration Between Cavity-free GeSn and Si Thermoelectric Generators

    Md Mehdee Hasan Mahfuz, Kazuaki Katayama, Yoshitsune Ito, Kazuaki Fujimoto, Motohiro Tomita, Masashi Kurosawa, Takeo Matsuki, Takanobu Watanabe

    Presentation date: 2022.03

  • Identifying an Anomalous Phonon Mode in SiGe Alloy using Molecular Dynamics Simulation

    Sylvia Yuk Yee Chung, Motohiro Tomita, Junya Takizawa, Ryo Yokogawa, Atsushi Ogura, Haidong Wang, Takanobu Watanabe

    Presentation date: 2022.01

  • Demonstration of Cavity-Free GeSn Thermoelectric Generator

    Kazuaki Katayama, Md Mehdee Hasan Mahfuz, Masaya Nakata, Yoshitsune Ito, Kazuaki Fujimoto, Motohiro Tomita, Masashi Kurosawa, Takeo Matsuki, Takanobu Watanabe

    2021 International Workshop on Dielectric Thin Films for Future Electron Devices (IWDTF2021) 

    Presentation date: 2021.11

  • Si微小熱Si微小熱電発電デバイスの集積化イスの集積化

    渡邉孝信, 富田基裕, 松木武雄, M. M, Hasan Mahfuz, 片山和明, 安部克基, 柏崎翼, 黒崎天彩美, 保科拓海, 詹天卓, 松川貴  [Invited]

    2021年電気学会 電子・情報・システム部門大会 

    Presentation date: 2021.09

  • 分⼦動⼒学法を⽤いたSiO2/Si/SiO2薄膜内の低エネルギーフォノンの振動モード解析

    富田 基裕, 横川 凌, 小椋 厚志, 渡邉 孝信

    第82回応用物理学会秋季学術講演会 

    Presentation date: 2021.09

  • 分⼦動⼒学法を⽤いたSiGe混晶内の低エネルギー局在フォノンの振動モード解析

    富田 基裕, S. Y, Y. Chung, 横川 凌, 小椋 厚志, 渡邉 孝信

    第82回応用物理学会秋季学術講演会 

    Presentation date: 2021.09

  • Effect of cluster size distribution in SiGe alloys on local phonon mode intensity

    Sylvia YukYee Chung, Motohiro Tomita, Junya Takizawa, Ryo Yokogawa, Atsushi Ogura, Haidong Wang, Takanobu Watanabe

    Presentation date: 2021.09

  • キャビティフリー熱電発電素⼦における電極上に発⽣する局所温度勾配の設計

    富田 基裕, 松木 武雄, 黑崎 天彩美, 安部 克基, 渡邉 孝信

    第82回応用物理学会秋季学術講演会 

    Presentation date: 2021.09

  • 分⼦動⼒学法を⽤いたGe2Sb2Te5の熱伝導率計算

    滝澤 諄弥, 富田 基裕, 山中 湧司, 渡邉 孝信

    第82回応用物理学会秋季学術講演会 

    Presentation date: 2021.09

  • Effect of cluster size on local phonon mode intensity in SiGe alloys

    Sylvia Yuk Yee Chung, Motohiro Tomita, Junya Takizawa, Ryo Yokogawa, Atsushi Ogura, Haidong Wang, Takanobu Watanabe

    Presentation date: 2021.07

    Event date:
    2021.07
     
     
  • 分子動力学法を用いたSiGe中の低エネルギーフォノンモードの変位解析

    富田基裕, Sylvia Yuk Yee Chung, 横川 凌, 小椋 厚志, 渡邉 孝信

    第5回フォノンエンジニアリング研究会 

    Presentation date: 2021.07

    Event date:
    2021.07
     
     
  • Unidentified SiGe Phonon Mode: The effect of an atomic mass difference

    Tianzhuo Zhan, Shuaizhe Ma, Zhicheng Jin, Hiroki Takezawa, Kohei Mesaki, Motohiro Tomita, Yan-Ju Wu, Yibin Xu, Takashi Matsukawa, Takeo Matsuki, Takanobu Watanabe

    68th JSAP spring meating 

    Presentation date: 2021.03

  • プレーナ型Si熱電発電デバイスの金属導熱路構造が発電性能に与える影響

    柏崎 翼, 富田 基裕, 平尾 修平, 田邉 咲華, 片山 和明, 松木 武雄, 渡邉 孝信

    第68回応用物理学会春季学術講演会 

    Presentation date: 2021.03

  • プレーナ型微小熱電発電モジュールのP/Nレグ幅による広がり抵抗の影響

    黒崎 天彩美, 富田 基裕, 織田 海斗, 安部 克基, 松木 武雄, 渡邉 孝信

    第68回応用物理学会春季学術講演会 

    Presentation date: 2021.03

  • 微小Si熱電発電デバイスにおけるペルチェ効果とジュール発熱の影響

    保科 拓海, 安部 克基, 織田 海斗, 富田 基裕, 松木 武雄, 渡邉 孝信

    第68回応用物理学会春季学術講演会 

    Presentation date: 2021.03

  • Si/SiO2界面に沿った熱伝導率の基板面方位依存性

    山中 湧司, 滝澤 諄弥, 富田 基裕, 渡邉 孝信

    第68回応用物理学会春季学術講演会 

    Presentation date: 2021.03

  • Development of Metal/dielectric Heat Guide Layer for Power Enhancement of Silicon Nanowire Thermoelectric Generators

    Tianzhuo Zhan, Shuaizhe Ma, Zhicheng Jin, Hiroki Takezawa, Kohei Mesaki, Motohiro Tomita, Yan-Ju Wu, Yibin Xu, Takashi Matsukawa, Takeo Matsuki, Takanobu Watanabe

    The 7th Asian Conference on Mechanics of Functional Materials and Structures (ACMFMS2020 + 1) 

    Presentation date: 2021.03

  • マイクロ熱電発電デバイスの発電に及ぼす金属/絶縁体積層ヒートガイド層の界面熱抵抗の影響

    詹 天卓, 馬 帥哲, 金 志成, 武澤 宏樹, 目崎 航平, 富田 基裕, 呉 彦儒, 徐 一斌, 松川 貴, 松木 武雄, 渡邉 孝信

    電子デバイス界面テクノロジー研究会 第26回研究会 

    Presentation date: 2021.01

  • 短レグ長におけるプレーナ型バイレグ熱電発電デバイスの広がり抵抗の影響

    織田 海斗, 安部 克基, ハサン マフズ, 富田 基裕, 松川 貴, 松木 武雄, 渡邉 孝信

    電子デバイス界面テクノロジー研究会 第26回研究会 

    Presentation date: 2021.01

  • Effect of Unit-Cell Arrangement on performance of Multi-Stage-planar Cavity-free Unileg Thermoelectric Generator Using Silicon Nanowires

    Katsuki Abe, Kaito Oda, Motohiro Tomita, Takeo Matsuki, Takashi Matsukawa, Takanobu Watanabe

    SISPAD2020 

    Presentation date: 2020.10

  • Observation of an Unidentified Phonon Peak in SiGe Alloys and Superlattices using Molecular Dynamics

    Sylvia Yuk Yee Chung, Motohiro Tomita, Ryo Yokogawa, Atsushi Ogura, Takanobu Watanabe

    ECS PRiME 2020 

    Presentation date: 2020.10

  • Effect of Ion Irradiation on Thermal Conductivity along SiO2/Si Interface Evaluated by Molecular Dynamics

    Junya Takizawa, Sylvia Yuk Yee Chung, Motohiro Tomita, Ryo Yokogawa, Atsushi Ogura, Takanobu Watanabe

    2020 International Conference on Solid State Devices and Materials (SSDM2020) 

    Presentation date: 2020.09

  • Experimental Demonstration of Bileg Silicon-nanowire Thermoelectric Generator with Cavity-free Structure

    Mahfuz Hasan, Motohiro Tomita, Shuhei Hirao, Kazuaki Katayama, Takashi Matsukawa, Takeo Matsuki, Takanobu Watanabe

    2020 International Conference on Solid State Devices and Materials (SSDM2020) 

    Presentation date: 2020.09

  • Estimation of Seebeck Coefficient of Si Wire Laterally Lying on Oxide-Covered Substrate

    Kazuaki Katayama, Mahfuz Hasan, Motohiro Tomita, Shuhei Hirao, Takashi Matsukawa, Takeo Matsuki, Hiroshi Inokawa, Hiroya Ikeda, Takanobu Watanabe

    2020 International Conference on Solid State Devices and Materials (SSDM2020) 

    Presentation date: 2020.09

  • 基板上に直接横たわったSi細線のゼーベック係数の測定(2)

    片山 和明, 富田 基裕, 平尾 修平, 田邉 咲華, 松川 貴, 松木 武雄, 猪川 洋, 渡邉 孝信

    第81回応用物理学会秋季学術講演会 

    Presentation date: 2020.09

  • Si製高集積熱電発電モジュールの最適設計:Siナノワイヤの熱伝導率が発電性能に与える影響

    安部 克基, 織田 海斗, 富田 基裕, 猪川 洋, 池田 浩也, 松川 貴, 松木 武雄, 渡邉 孝信

    第67回応用物理学会春季学術講演会 

    Presentation date: 2020.03

  • 基板上に直接横たわったSi細線のゼーベック係数の測定

    片山 和明, 富田 基裕, 平尾 修平, 武澤 宏樹, 目﨑 航平, 田邉 咲華, 松川 貴, 松木 武雄, 猪川 洋, 池田 浩也, 渡邉 孝信

    第67回応用物理学会春季学術講演会 

    Presentation date: 2020.03

  • A New Unidentified Phonon State in SiGe Alloys Reproduced by Molecular Dynamics Simulation

    Sylvia Yuk Yee Chung, Motohiro Tomita, Ryo Yokogawa, Atsushi Ogura, Takanobu Watanabe

    67th JSAP spring meating 

    Presentation date: 2020.03

  • Thermally and Electrically Aware Integration of Si-Nanowire Thermoelectric Generator into Si-CMOS Devices without Cavity

    Takeo Matsuki, Motohiro Tomita, Tianzhuo Zhan, Hiroshi Inokawa, Takashi Matsukawa, Takanobu Watanabe  [Invited]

    12th International Symposium on Advanced Plasma Science and its Application for Nitrides and Nanomaterials 13th International Conference on Plasma-Nano Technology & Science 

    Presentation date: 2020.03

  • マイクロ熱電発電素子のための低熱抵抗金属/絶縁体積層薄膜の開発

    詹天卓, 馬 帥哲, 金 志誠, 武澤 宏樹, 目崎 航平, 富田 基裕, 呉 彦儒, 徐 一斌, 渡邉 孝信  [Invited]

    電子情報通信学会 シリコン材料・デバイス研究会(SDM) 

    Presentation date: 2020.02

  • Impact of Thermal Boundary Resistance on Temperature Rise of Cu Interconnects

    Tianzhuo Zhan, Kaito Oda, Shuaizhe Ma, Motohiro Tomita, Hiroki Takezawa, Kohei Mesaki, Yen-ju Wu, Yibin Xu, Takashi Matsukawa, Takeo Matsuki, Takanobu Watanabe

    Workshop on Electron Device Interface Technology 

    Presentation date: 2020.01

  • プレーナ型Siナノワイヤ熱電デバイスの配線構造設計

    織田 海斗, 安部 克基, 富田 基裕, 松川 貴, 松木 武雄, 渡邉 孝信

    電子デバイス界面テクノロジー研究会-材料・プロセス・デバイス特性の物理-(第25回) 

    Presentation date: 2020.01

  • 絶縁膜埋め込みSi-NWを用いた熱電デバイスにおけるSi-NW間距離が発電性能に及ぼす影響

    田邉 咲華, 織田 海斗, 武澤 宏樹, 目崎 航平, 富田 基裕, 松木 武雄, 松川 貴, 渡邉 孝信

    電子デバイス界面テクノロジー研究会-材料・プロセス・デバイス特性の物理-(第25回) 

    Presentation date: 2020.01

  • Thermoelectric enhancement of silicon nanowire thermoelectric generator based on thermally conductive multilayers

    Zhicheng Jin, Tianzhuo Zhan, Shuaizhe Ma, Hiroki Takezawa, Kohei Mesaki, Shuhei Hirao, Motohiro Tomita, Yen-Ju Wu, Yibin Xu, Takashi Matsukawa, Takeo Matsuki, Takanobu Watanabe

    Workshop on Electron Device Interface Technology 

    Presentation date: 2020.01

  • Origin of Anomalous Phonon State in SiGe Alloys Studied with Molecular Dynamics

    Sylvia Yuk Yee Chung, Motohiro Tomita, Ryo Yokogawa, Atsushi Ogura, Takanobu Watanabe

    Workshop on Electron Device Interface Technology 

    Presentation date: 2020.01

  • Dipole Reversal Induced by Phase-transition at Hetero-Oxide Interface Simulated by Molecular Dynamics

    S. Kanemaru, M. C. Perea, M. Tomita, T. Watanabe

    2019 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY 

    Presentation date: 2019.11

  • Effect of Embedding in Dielectric Film on the Performance of Si-Nanowire Thermoelectric Generator

    S. Tanabe, K. Oda, H. Takezawa, K. Mesaki, M. Tomita, T. Matsuki, T. Matsukawa, T. Watanabe

    2019 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY 

    Presentation date: 2019.11

  • Metal/insulator thermally conductive layers for miniaturized planar Si-nanowire thermoelectric generator

    S. Ma, T. Zhan, R. Yamato, M. Xu, H. Takezawa, K. Mesaki, M. Tomita, Y.-J. Wu, Y. Xu, T. Watanabe

    Advanced Metallization Conference 2019 29th Asian Session 

    Presentation date: 2019.10

  • Phonon Lifetimes: A Dependency on Size for Nano Silicon and Nano Germamium

    S. Chung, M. Tomita, T. Watanabe

    2019 International Conference on Solid State Devices and Materials 

    Presentation date: 2019.09

  • Impact of Heat Guide Thickness on Output Power of Planar Silicon Thermoelectric Generator

    S. Hirao, K. Mesaki, K. Oda, H. Takezawa, M. Tomita, T. Matsukawa, T. Matsuki, T. Watanabe

    2019 International Conference on Solid State Devices and Materials 

    Presentation date: 2019.09

  • Power enhancement of silicon nanowire thermoelectric generator by using metal/dielectric thermally conductive layer,

    T. Zhan, M. Xu, S. Ma, R. Yamato, Y. Himeda, H. Takezawa, K. Mesaki, S. Hirao, M. Tomita, Y. Wu, Y. Xu, T. Matsukawa, T. Matsuki, T. Watanabe

    2019 International Conference on Solid State Devices and Materials 

    Presentation date: 2019.09

  • Backend Engineering of Cavity-free Planar Si-nanowire Thermoelectric Generator

    K. Oda, M. Tomita, T. Matsukawa, T. Matsuki, T. Watanabe

    2019 International Conference on Solid State Devices and Materials 

    Presentation date: 2019.09

  • ナノワイヤ型シリコン熱電デバイスの熱電発電性能のナノワイヤ幅依存性

    平尾修平, 武澤宏樹, 目崎航平, 松木武雄, 松川貴, 富田基裕, 渡邉孝信

    第80回応用物理学会秋季学術講演会 

    Presentation date: 2019.09

  • プレーナ型Siナノワイヤ熱電デバイスの配線配置設計による熱流制御

    織田海斗, 富田基裕, 松川貴, 松木武雄, 渡邉孝信

    第80回応用物理学会秋季学術講演会 

    Presentation date: 2019.09

  • 熱コンタクト制御による微小熱電発電デバイス特性の測定精度の向上

    目﨑航平, 武澤宏樹, 田邉咲華, 富田基裕, 松木武雄, 渡邉孝信

    第80回応用物理学会秋季学術講演会 

    Presentation date: 2019.09

  • Simulated Phonon Lifetimes of Defect Bulk Silicon

    S. Chung, M. Tomita, T. Watanabe

    80th JSAP fall meating 

    Presentation date: 2019.09

  • Metal/insulator thermally conductive layers for thermoelectric energy harvesting applications

    T. Zhan, R. Yamato, M. Xu, H. Takezawa, K. Mesaki, M. Tomita, Y. Wu, Y. Xu, T. Watanabe

    The 2019 Spring Meeting of the European Materials Research Society 

    Presentation date: 2019.05

  • Cavity-Free Micro Thermoelectric Energy Harvester with Si Nanowires

    T. Watanabe, M. Tomita, T. Zhan, K. Shima, Y. Himeda, R. Yamato, T. Matsukawa, T. Matsuki  [Invited]

    235th ECS Meeting 

    Presentation date: 2019.05

  • マイクロプローバを用いた薄膜ナノコンポジットの絶縁破壊測定

    髙橋滉平, 三川莉奈, 大西拓弥, 富田基裕, 渡邉孝信, 武良光太郎, 中村隆央, 吉満哲夫

    平成31年電気学会全国大会 

    Presentation date: 2019.03

  • P型表水平配向Siナノワイヤのゼーベック係数評価:不純物濃度依存性と水素アニールの効果

    田辺咲華, 姫田悠矢, 武澤宏樹, 目﨑航平, 平尾修平, 富田基裕, 松木武雄, 松川貴, 渡邉孝信

    第66回応用物理学会春季学術講演会 

    Presentation date: 2019.03

  • 金属/絶縁体複合熱伝導層を載せたナノワイヤ型シリコン熱電デバイスの評価

    平尾修平, 大和亮, 詹天卓, 徐茂, 武澤宏樹, 目崎航平, 富田基裕, 徐一斌, 渡邉孝信

    第66回応用物理学会春季学術講演会 

    Presentation date: 2019.03

  • Siナノワイヤを用いたプレーナ型ユニレグ多段熱電発電デバイス構造の検討

    織田海斗, 島圭佑, 富田基裕, 松木武雄, 渡邉孝信

    第66回応用物理学会春季学術講演会 

    Presentation date: 2019.03

  • プレーナ型シリコン熱電発電デバイスの出力の熱伝導層膜厚依存性

    野口生那, 目崎航平, 島圭佑, 姫田悠矢, 武澤宏樹, 平尾修平, 富田基裕, 渡邉孝信

    第66回応用物理学会春季学術講演会 

    Presentation date: 2019.03

  • 急速溶融成長法で作製されたSiGeワイヤの熱電特性]

    熊田剛大, 中村俊貴, 富田基裕, 中田壮哉, 高橋恒太, 黒澤昌志, 渡邉孝信

    第66回応用物理学会春季学術講演会 

    Presentation date: 2019.03

  • 熱伝導率異方性制御CNTシートを用いたプレナー型熱電発電デバイスの設計

    島圭佑, 富田基裕, 松本昌修, 藤ヶ谷剛彦, 渡邉孝信

    第66回応用物理学会春季学術講演会 

    Presentation date: 2019.03

  • ノンドープ組成傾斜SiGeワイヤの微小ゼーベック係数測定

    熊田剛大, 中村俊貴, 富田基裕, 中田壮哉, 高橋恒太, 黒澤昌志, 渡邉孝信

    電子デバイス界面テクノロジー研究会 ―材料・プロセス・デバイス特性の物理―(第24回研究会) 

    Presentation date: 2019.01

  • 金属/絶縁体積層熱伝導層の熱抵抗

    詹天卓, 大和亮, 徐茂, 武澤宏樹, 目崎航平, 富田基裕, 呉彦儒, 徐一斌, 渡邉孝信

    電子デバイス界面テクノロジー研究会 ―材料・プロセス・デバイス特性の物理―(第24回研究会) 

    Presentation date: 2019.01

  • Al2O3/SiO2界面ダイポールのSiO2多形依存性

    金丸翔大, 高橋憶人, Marc Perea Causin, 富田基裕, 渡邉孝信

    電子デバイス界面テクノロジー研究会 ―材料・プロセス・デバイス特性の物理―(第24回研究会) 

    Presentation date: 2019.01

  • マイクロ電極デバイスを用いたシリカ/エポキシ界面の破壊経路観察

    三川莉奈, 大西拓弥, 髙橋滉平, 富田基裕, 武良光太郎, 中村隆央, 吉満哲夫, 渡邉孝信

    誘電・絶縁材料/放電・プラズマ・パルスパワー/高電圧合同研究会 

    Presentation date: 2019.01

  • CMOS Friendly Silicon-based Micro Thermoelectric Generator

    T. Watanabe, M. Tomita, T. Zhan, H. Zhang, T. Matsukawa, T. Matsuki, Y. Kamakura, H. Ikeda  [Invited]

    5th International Conference on Nanoscience and Nanotechnology 

    Presentation date: 2019.01

  • Metal/Insulator Multilayered Thermally Conductive Films

    M. Xu, T. Zhan, R. Yamato, H. Takezawa, K. Mesaki, M. Tomita, Y. Xu, T. Watanabe

    31st International Microprocesses and Nanotechnology Conference 

    Presentation date: 2018.11

  • Nanometer-Scale Observation of Dielectric Breakdown Path in Insulating Epoxy Resin by Using Micro-Gap Electrode Device

    R. Sankawa, T. Onishi, Kohei Takahashi, M. Tomita, T. Nakamura, K. Mura, T. Yoshimitsu, T. Watanabe

    31st International Microprocesses and Nanotechnology Conference 

    Presentation date: 2018.11

  • スケーラブルSiマイクロ熱電デバイスの開発

    渡邉孝信, 富田基裕, 詹天卓, 張慧, 松川貴, 松木武雄, 鎌倉良成, 池田浩也

    CREST「微小エネルギー」公開シンポジウム 

    Presentation date: 2018.11

  • Computational Experiment on the Dipole Layer Formation at Oxide Hetero-interface

    S. Kanemaru, O. Takahashi, M. C. Perea, M. Tomita, T. Watanabe

    14th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures 

    Presentation date: 2018.10

  • Evaluation of Laterally Graded Silicon Germanium Wires for Thermoelectric Devices Fabricated by Rapid Melting Growth

    R. Yokogawa, S. Hashimoto, K. Takahashi, S. Oba, M. Tomita, M. Kurosawa, T. Watanabe, A. Ogura

    2018 Americas International Meeting on Electrochemistry and Solid State Science 

    Presentation date: 2018.10

  • 異種酸化物界面のダイポール形成に非晶質短距離秩序構造の違いが与える影響

    金丸翔大, 高橋憶人, Perea Marc, 富田基裕, 渡邉孝信

    第79回応用物理学会秋季学術講演会 

    Presentation date: 2018.09

  • 金属/絶縁体積層構造の接合層材料が熱抵抗に与える影響

    大和亮, 詹天卓, 徐茂, 武澤宏樹, 目﨑航平, 富田基裕, 徐一斌, 渡邉孝信

    第79回応用物理学会秋季学術講演会 

    Presentation date: 2018.09

  • 平面型シリコンナノワイヤ熱電デバイスにおける熱流を制御する最適基板構造

    島圭佑, 富田基裕, 張慧, 詹天卓 松川貴, 松木武雄, 渡邉孝信

    第79回応用物理学会秋季学術講演会 

    Presentation date: 2018.09

  • シリコンナノワイヤの微小熱電発電デバイスにおける発電性能のワイヤ幅依存性

    武澤宏樹, 姫田悠矢, 島圭祐, 大和亮, 熊田剛大, 徐茂, 目﨑航平, 富田基裕, 詹天卓, 鎌倉良成, 松木武雄, 松川貴, 渡邉孝信

    第79回応用物理学会秋季学術講演会 

    Presentation date: 2018.09

  • 金属/絶縁体複合熱伝導層の熱伝導率

    詹天卓, 大和亮, 徐茂, 武澤宏樹, 目崎航平, 富田基裕, 徐一斌, 渡邉孝信

    第79回応用物理学会秋季学術講演会 

    Presentation date: 2018.09

  • Optimum substrate design of planar type Si nanowire thermoelectric generator

    K. Shima, M. Tomita, H. Zhang, T. Zhan, T. Matsukawa, T. Matsuki, T. Watanabe

    2018 International Conference on Solid State Devices and Materials 

    Presentation date: 2018.09

  • Considering possible descriptors for Dipole Moment at High-k/SiO2 interfaces

    M. Perea, O. Takahashi, S. Kanemaru, M. Tomita, T. Watanabe

    2018 International Conference on Solid State Devices and Materials 

    Presentation date: 2018.09

  • 熱電デバイス用組成傾斜SiGeワイヤの構造評価

    横川凌, 橋本修一郎, 高橋恒太, 大場俊輔, 富田基裕, 黒澤昌志, 渡邉孝信, 小椋厚志

    第65回応用物理学会春季学術講演会 

    Presentation date: 2018.03

  • IV族混晶のマイクロ熱電発電デバイス応用

    渡邉孝信, 橋本修一郎, 富田基裕, 黒澤昌志, 池田浩也  [Invited]

    第65回応用物理学会春季学術講演会 

    Presentation date: 2018.03

  • Persistent Homology を用いたアモルファスSiO2膜の構造解析

    テイチュウ, 寺田拓哉, 富田基裕, 渡邉孝信, 小山晃

    第65回応用物理学会春季学術講演会 

    Presentation date: 2018.03

  • シリコンナノワイヤを用いた微小熱電発電デバイスの短レグ効果

    武澤宏樹, 姫田悠矢, 橋本修一郎, 大場俊輔, 大和亮, 熊田剛大, 徐茂, 目崎航平, 富田基裕, 詹天卓, 松木武雄, 松川貴, 渡邉孝信

    第65回応用物理学会春季学術講演会 

    Presentation date: 2018.03

  • Thermoelectric Characteristics of Rapid-Melting-Grown SiGe Wires Measured by Peltier Cooling Experiment

    S. Hashimoto, K. Takahashi, S. Oba, T. Terada, M. Ogasawara, M. Tomita, M. Kurosawa, T. Watanabe

    2nd Electron Devices Technology and Manufacturing Conference 

    Presentation date: 2018.03

  • Investigation of Dipole Formation at AlOxNy/SiO2 interface by MD simulation

    O. Takahashi, N. Nakagawa, M. Tomita, T. Watanabe

    2017 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY 

    Presentation date: 2017.11

  • Machine Learning of Interfacial Dipole Moments Between Multicomponent Oxide Films by Neural Network Model”

    K. Nakane, M. Tomita, T. Watanabe

    2017 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY 

    Presentation date: 2017.11

  • Nano-scale Evaluation of Electrical Tree Initiation in Silica/Epoxy Nano-Composite Thin Film

    T. Onishi, G. Obana, S. Hashimoto, M. Tomita, T. Watanabe, K. Mura, T. Tsuda, T. Yoshimitsu

    8th International Symposium on Electrical Insulating Materials 

    Presentation date: 2017.09

  • Possibility of Thermoelectric Property Improvement by Non-uniformly Doped Si

    K. Shima, M. Tomita, Y. Kamakura, T. Watanabe

    2017 International Conference on Solid State Devices and Materials 

    Presentation date: 2017.09

  • 分子動力学法を用いたIV-IV族結晶(SiGe, GeSn, SiSn)の熱伝導率評価

    小笠原成崇, 寺田拓也, 富田基裕, 渡邉孝信

    第78回応用物理学会秋季学術講演会 

    Presentation date: 2017.09

  • 分子動力学計算によるAlOxNy/SiO2界面におけるダイポール形成の駆動力の調査

    高橋憶人, 中川宣託, 富田基裕, 渡邉孝信

    第78回応用物理学会秋季学術講演会 

    Presentation date: 2017.09

  • ニューラルネットワークを用いた多元酸化物界面のダイポールモーメントの予測

    中根滉稀, 富田基裕, 渡邉孝信

    第78回応用物理学会秋季学術講演会 

    Presentation date: 2017.09

  • 水浸ラマン分光法によるAr+イオン照射を施した酸化膜被覆型Si ナノワイヤの異方性二軸応力評価

    横川凌, 橋本修一郎, 富田基裕, 渡邉孝信, 小椋厚志

    第78回応用物理学会秋季学術講演会 

    Presentation date: 2017.09

  • 水浸ラマン分光法による酸化膜被覆型Siナノワイヤの異方性二軸応力評価

    横川凌, 鈴木貴博, 橋本修一郎, 麻田修平, 富田基裕, 渡邉孝信, 小椋厚志

    第64回応用物理学会春季学術講演会 

    Presentation date: 2017.03

  • 分子動力学法を用いたSi/Si(1-x)Gex構造の界面熱抵抗評価

    寺田拓哉, 小出隆太, 富田基裕, 渡邉孝信

    第64回応用物理学会春季学術講演会 

    Presentation date: 2017.03

  • 温度分布と不純物濃度分布が熱電特性に与える影響の考察

    島圭佑, 富田基裕, 鎌倉良成, 渡邉孝信

    第64回応用物理学会春季学術講演会 

    Presentation date: 2017.03

  • ニューラルネットによるHigh-k/SiO2界面分極の予測能力

    中根滉稀, 功刀遼太, 富田基裕, 渡邉孝信

    第77回応用物理学会秋季学術講演会 

    Presentation date: 2016.09

  • 分子動力学法によるSiナノワイヤの熱伝導シミュレーション-波付き構造と酸化被膜の影響の比較-

    小出隆太, 富田基裕, 渡邉孝信

    第77回応用物理学会秋季学術講演会 

    Presentation date: 2016.09

  • Ar+イオン照射によるSiナノワイヤのNi合金化反応の高精度制御

    大場俊輔, 橋本修一郎, 武井康平, ソンセイ, 張旭, 徐泰宇, 麻田修平, 臼田稔宏, 遠藤清, 富田基裕, 徳武寛紀, 今井亮佑, 小椋厚志, 松川貴, 昌原明植, 渡邉孝信

    第63回応用物理学会春季学術講演会 

    Presentation date: 2016.03

  • Ar+イオン照射によるSiナノワイヤのNi合金化プロセスの制御性向上

    麻田修平, 橋本修一郎, 武井康平, ソン セイ, 張旭, 徐泰宇, 臼田稔宏, 遠藤清, 大場俊輔, 富田基裕, 今井亮佑, 小椋厚志, 松川貴, 昌原明植, 渡邉孝信

    電子デバイス界面テクノロジー研究会 ―材料・プロセス・デバイス特性の物理― (第21回研究会) 

    Presentation date: 2016.01

  • Origin of Preferential Diffusion of Ni along Si/SiO2 Interface in Si Nanowire

    S. Hashimoto, K. Takei, J. Sun, S. Asada, X. Zhang, T. Xu, T. Usuda, M. Tomita, R. Imai, A. Ogura, T. Matsukawa, M. Masahara, T. Watanabe

    28th International Microprocesses and Nanotechnology Conference 

    Presentation date: 2015.11

  • Controlling Nickelidation Process of Si Nanowire by Ar+ Ion Irradiation

    S. Asada, S. Hashimoto, K. Takei, J. Sun, X. Zhang, T. Xu, T. Usuda, M. Tomita, R. Imai, A. Ogura, T. Matsukawa, M. Masahara, T. Watanabe

    28th International Microprocesses and Nanotechnology Conference 

    Presentation date: 2015.11

  • GeO2酸化膜を考慮したGeナノワイヤ構造の熱伝導率およびフォノン分散関係の分子動力学的解析

    小出隆太, 志村昴亮, 橋本修一郎, 富田基裕, 渡邉孝信

    第76回応用物理学会秋季学術講演会 

    Presentation date: 2015.09

  • Ar+イオン照射によるSi ナノワイヤのNi 合金化プロセスの制御

    張旭, 橋本修一郎, 武井康平, ソン セイ, 徐泰宇, 麻田修平, 臼田稔宏, 富田基裕, 今井亮佑, 小椋厚志, 松川貴, 昌原明植, 渡邉孝信

    第76回応用物理学会秋季学術講演会 

    Presentation date: 2015.09

  • On the Origin of the Gate Oxide Failure Evaluated by Raman Spectroscopy

    R. Yokogawa, M. Tomita, T. Mizukoshi, T. Hirano, K. Kusano, K. Sasaki, A. Ogura

    227th Electrochemical Society Meeting 

    Presentation date: 2015.05

  • Evaluation of Anisotropic Biaxial Stress in Si1-xGex/Ge Mesa-Structure by Oil-Immersion Raman Spectroscopy

    S. Yamamoto, K. Takeuchi, R. Yokogawa, M. Tomita, D. Kosemura, K. Usuda, A. Ogura

    227th Electrochemical Society Meeting 

    Presentation date: 2015.05

  • ゲート絶縁膜耐圧不良のラマン分光法による原因評価

    横川凌, 富田基裕, 水越俊和, 平野雄大, 草野健一郎, 佐々木克弘, 小椋厚志

    第62回応用物理学会春季学術講演会 

    Presentation date: 2015.03

  • 高Ge濃度歪SiGeメサ構造に印加された異方性2軸応力評価

    山本章太郎, 武内一真, 富田基裕, 小瀬村大亮, 臼田宏冶, 小椋厚志

    第62回応用物理学会春季学術講演会 

    Presentation date: 2015.03

  • 高Ge濃度SiGeにおけるフォノン変形ポテンシャルの導出

    武内一真, 小瀬村大亮, 山本章太郎, 富田基裕, 臼田宏冶, 小椋厚志

    第62回応用物理学会春季学術講演会 

    Presentation date: 2015.03

  • SiO2/Si界面の結晶性劣化によるSiナノワイヤのニッケル化速度の上昇

    武井康平, 小杉山洋希, 橋本修一郎, ソン セイ, 麻田修平, 徐泰宇, 若水昂, 今井亮佑, 徳武寛紀, 富田基裕, 小椋厚志, 松川貴, 昌原明植, 渡邉孝信

    ゲートスタック研究会 ―材料・プロセス・評価の物理― (第20回) 

    Presentation date: 2015.01

  • Impact of Post-Oxidation Annealing of Si Nanowire on Its Ni Silicidation Rate

    S. Hashimoto, H. Kosugiyama, K. Takei, J. Sun, R. Imai, H. Tokutake, M. Tomita, A. Ogura, T. Matsukawa, M. Masahara, T. Watanabe

    27th International Microprocesses and Nanotechnology Conference 

    Presentation date: 2014.11

  • SiナノワイヤのNiシリサイド化速度へのポスト酸化アニールの影響

    ソン セイ, 橋本修一郎, 小杉山洋希, 武井康平, 麻田修平, 徐泰宇, 若水昂, 今井亮佑, 徳武寛紀, 松川貴, 富田基裕, 小椋厚志, 昌原明植, 渡邉孝信

    第75回応用物理学会秋季学術講演会 

    Presentation date: 2014.09

  • 液浸ラマン分光法による選択的イオン注入により作製された一軸歪SiGe/Siの異方性2軸応力評価

    山本章太郎, 小瀬村大亮, 富田基裕, 武内一真, 横川凌, 米倉瑛介, 澤野憲太郎, 野平博司, 小椋厚志

    第75回応用物理学会秋季学術講演会 

    Presentation date: 2014.09

  • 液浸ラマン分光法を用いたTO/LOフォノンスペクトル励起による高Ge濃度歪SiGeメサ構造の異方性2軸応力緩和の観測

    山本章太郎, 小瀬村大亮, 富田基裕, 武内一真, 横川凌, 臼田宏冶, 小椋厚志

    第75回応用物理学会秋季学術講演会 

    Presentation date: 2014.09

  • チップ増強ラマン分光法による歪Si評価

    小瀬村大亮, 富田基裕, シティノルヒダヤーチェモハマドユソフ, 後藤千絵, 川口哲成, 三澤真弓, 小椋厚志

    第61回応用物理学会春季学術講演会 

    Presentation date: 2014.03

  • ラマン分光法による多結晶シリコン薄膜の結晶性分布評価

    安川裕政, 富田基裕, 小瀬村大亮, 山崎英之, 富田充裕, 臼田宏治, 小椋厚志

    第61回応用物理学会春季学術講演会 

    Presentation date: 2014.03

  • Evaluation of Anisotropic Biaxial Stress in Si Nano Area by Raman Spectroscopy Using Surface Plasmon Resonance

    R. Iwasaki, K. Nagata, M. Tomita, D. Kosemura, A. Ogura

    2013 Materials Research Society Fall Meeting 

    Presentation date: 2013.12

  • 液浸ラマン分光法による高Ge濃度圧縮歪SiGeメサ構造/Ge基板からのLO,TOフォノンスペクトルの観測

    小瀬村大亮, 富田基裕, 臼田宏治, 手塚勉, 小椋厚志

    第74回応用物理学会秋季学術講演会 

    Presentation date: 2013.09

  • 表面プラズモン共鳴を用いたラマン分光法によるSi微小領域の異方性二軸応力評価

    岩崎竜平, 永田晃基, 富田基裕, 小瀬村大亮, 小椋厚志

    第74回応用物理学会秋季学術講演会 

    Presentation date: 2013.09

  • 高Ge濃度SGOIワイヤーの異方性ひずみ評価

    臼田宏治, 池田圭司, 小瀬村太亮, 富田基裕, 小椋厚志, 手塚勉

    第74回応用物理学会秋季学術講演会 

    Presentation date: 2013.09

  • Tensor Evaluation of Stress Relaxation Profile in Strained SiGe Nanostructures on Si Substrate

    K. Usuda, D. Kosemura, K. Ikeda, H. Hashiguti, M. Tomita, A. Ogura, T. Tezuka

    6th International Symposium on Control of Semiconductor Interfaces 

    Presentation date: 2013.06

  • Evaluation of Strain relaxation at mesa edge of strained SiGe layer on Si by oil-immersion Raman spectroscopy, NBD, and FEM simulation

    K. Usuda, D. Kosemura, M. Tomita, A. Ogura, T. Tezuka

    6th International Symposium on Advanced Science and Technology of Silicon Materials 

    Presentation date: 2012.11

  • Anisotropic Biaxial Stress Evaluation in SiGe/Si Mesa Structures by Oil-Immersion Raman Spectroscopy

    D. Kosemura, M. Tomita, K. Usuda, T. Tezuka, A. Ogura

    6th International Symposium on Advanced Science and Technology of Silicon Materials 

    Presentation date: 2012.11

  • Measurements of Anisotropic Biaxial Stresses in x=0.15 and 0.30 Si1-xGex Nanostructures by Oil-Immersion Raman Spectroscopy

    D. Kosemura, M. Tomita, K. Usuda, T. Tezuka, A. Ogura

    2012 International Conference on Solid State Devices and Materials 

    Presentation date: 2012.09

  • 高NA、油浸ラマン分光によるメサ分離ひずみSGOI層の異方性ひずみ評価

    臼田宏治, 小瀬村大亮, 富田基裕, 小椋厚志, 手塚勉

    第73回応用物理学会秋季学術講演会 

    Presentation date: 2012.09

  • 微細構造Si1-xGexに印加された異方性応力の加工形状およびGe濃度依存性

    小瀬村大亮, 富田基裕, 臼田宏治, 手塚勉, 小椋厚志

    第73回応用物理学会秋季学術講演会 

    Presentation date: 2012.09

  • SSOI微細構造における異方性応力緩和の膜厚依存性評価

    シティノルヒダヤー, チェモハマドユソフ, 富田基裕, 小瀬村大亮, 臼田宏治, 手塚勉, 小椋厚志

    第73回応用物理学会秋季学術講演会 

    Presentation date: 2012.09

  • EBSP法を用いたSiGe/Siメサ構造における異方性応力緩和評価

    長坂将也, 富田基裕, 小瀬村大亮, 臼田宏治, 手塚勉

    第73回応用物理学会秋季学術講演会 

    Presentation date: 2012.09

  • Characterization of anisotropic strain relaxation after mesa isolation for strained SGOI and SiGe/Si structure with newly developed high-NA and oil-immersion Raman method

    K. Usuda, D. Kosemura, M. Tomita, A. Ogura, T. Tezuka

    International SiGe Technology and Deice Meeting 

    Presentation date: 2012.06

  • 液浸ラマン分光法による歪SiGe の異方性応力評価

    小瀬村大亮, 富田基裕, 臼田宏治, 小椋厚志

    春季第59 回応用物理学関係連合講演会 

    Presentation date: 2012.03

  • Biaxial Stress Measurements in Mesa-Shaped Strained Si Layers by Oil-Immersion Raman Spectroscopy

    D. Kosemura, M. Tomita, K. Usuda, T. Tezuka, A. Ogura

    International Conference on Development of Core Technologies for Green Nanoelectronics 

    Presentation date: 2012.03

  • Evaluation of Anisotropic Strain Relaxation in SSOI Nanostructure by Oil-Immersion Raman Spectroscopy

    D. Kosemura, M. Tomita, K. Usuda, A. Ogura

    2011 International Conference on Solid State Devices and Materials 

    Presentation date: 2011.09

  • 異方的SSOI 層の軸分解ラマン測定

    小瀬村大亮, 富田基裕, 臼田宏治, 小椋厚志

    秋季第72回 応用物理学会学術講演会 

    Presentation date: 2011.08

  • 液浸ラマン分光法によるSi のせん断応力評価

    小瀬村大亮, 武井宗久, 永田晃基, 赤松弘彬, 富田基裕, 小椋厚志

    春季第58 回応用物理学関係連合講演会 

    Presentation date: 2011.03

  • Excitation of forbidden phonon modes in Si using a high-NA oil-immersion lens for anisotropic biaxial stress analysis

    D. Kosemura, M. Takei, K. Nagata, H. Akamatsu, M. Hattori, M. Tomita, A. Ogura

    International Symposium on Technology Evolution for Silicon Nano-Electronics 

    Presentation date: 2010.06

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Syllabus

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Teaching Experience

  • Computational Experiments

    Waseda University  

  • 電子物性2

    明治大学  

  • 計算機実験学概論

    早稲田大学  

  • 電子物理システム演習A

    早稲田大学  

  • 電子物理システム演習C

    早稲田大学