KUNIOSHI, Nilson

写真a

Affiliation

Faculty of Science and Engineering, School of Creative Science and Engineering

Job title

Professor
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Concurrent Post 【 display / non-display 】

  • Faculty of Science and Engineering   Graduate School of Creative Science and Engineering

  • Faculty of Science and Engineering   Graduate School of Fundamental Science and Engineering

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Research Institute 【 display / non-display 】

  • 2020
    -
    2022

    理工学術院総合研究所   兼任研究員

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Education 【 display / non-display 】

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    1992

    Kyoto University   Graduate School, Division of Engineering   Industrial Chemistry  

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    1992

    Kyoto University   Graduate School, Division of Engineering   Industrial Chemistry  

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    1985

    University of Sao Paulo   Faculty of Engineering   Chemical Engineering  

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Degree 【 display / non-display 】

  • Kyoto University   Dr. Eng.

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Professional Memberships 【 display / non-display 】

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    Japanese Society of Mechanical Engineers

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    Japanese Section of the Combustion Institute

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    The Chemical Society of Japan

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    Japanese Society for Engineering Education

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Research Areas 【 display / non-display 】

  • Science education

  • Fundamental physical chemistry

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Research Interests 【 display / non-display 】

  • Language in science education, materials chemistry

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Papers 【 display / non-display 】

  • Pressure dependence of rate coefficients of unimolecular and chemical activation reactions connected to the potential energy wells of chlorinated monosilanes by RRKM calculations

    Kaito Noda, Yoshihiro Jagawa, Akio Fuwa, Nilson Kunioshi

    INTERNATIONAL JOURNAL OF CHEMICAL KINETICS    2021.05

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    Rate coefficients for elementary reactions connected to the potential energy wells of SiHCl3, SiH2Cl2, SiHCl2, and SiH3Cl, which are important Si-1 species in chemical vapor deposition (CVD) processes that use chlorosilanes as silicon source gases, were determined through Rice-Ramsperger-Kassel-Marcus (RRKM) theory for various conditions of temperature and pressure. Many of the unimolecular decomposition channels and chemical activation reactions investigated in this work were found to be in the fall-off regime under subatmospheric to moderately high-pressure conditions, so that it is expected that accurate modeling of the gas phase in chlorosilane CVD reactors requires careful determination of the rate coefficients as functions of temperature and pressure for the conditions of interest, instead of using high-pressure limit rate coefficients. The rate coefficients determined here were tabulated using Chebyshev coefficients and can be used in simulations of systems under a wide range of temperature and pressure conditions.

    DOI

  • Dynamics of reactions inhibiting epitaxial growth of Si(100) surfaces via interaction with hydrogen chloride

    Nilson Kunioshi, Yoshiki Fujimura, Akio Fuwa, Katsunori Yamaguchi

    Computational Materials Science   155 ( 12 ) 28 - 35  2018.12  [Refereed]

    DOI

  • Novel pathways for elimination of chlorine atoms from growing Si(100) surfaces in CVD reactors

    Nílson Kunioshi, Sho Hagino, Akio Fuwa, Katsunori Yamaguchi

    Applied Surface Science   441   773 - 779  2018.05  [Refereed]

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    Reactions leading to elimination of chlorine atoms from growing Si(100) surfaces were simulated using clusters of silicon atoms of different sizes and shapes, and at the UB3LYP/6–31 g(d,p) level of theory. The reactions of type SiCl2(s) + 2 H2(g), where (s) indicates an adsorbed species at the surface and (g) a gas-phase species, were found to proceed in two steps: SiCl2(s) + H2(g) → SiHCl(s) + HCl(g) and SiHCl(s) + H2(g) → SiH2(s) + HCl(g), each having activation energies around 55 kcal/mol, a value which is comparable to experimental values published in the literature. In addition, the results suggested that H-passivation of Si(100) surfaces support reactions leading to canonical epitaxial growth, providing a plausible explanation for the convenience of passivating the surfaces prior to silicon deposition. The reactions analyzed here can therefore be seen as important steps in the mechanism of epitaxial growth of Si(100) surfaces.

    DOI

  • Evidence of cultural differences between American and Japanese mainstream science and engineering contexts from analysis of classroom discourse

    Nilson Kunioshi, Judy Noguchi, Kazuko Tojo

    European Journal of Engineering Education    2018.01  [Refereed]

    DOI

  • Features, Challenges and Prospects of a Science and Engineering English-taught Program

    Nilson Kunioshi, Harushige Nakakoji

    English-Medium Instruction in Japanese Higher Education     250 - 262  2017.11  [Refereed]

    DOI

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Research Projects 【 display / non-display 】

  • Designing of novel bone-inducing molecules by an experimental-computational approach

    基盤研究(C)

    Project Year :

    2021.04
    -
    2024.03
     

    国吉 ニルソン

  • グローバル化する理工系高等教育における英語を介した講義と教授文化の関連性の解明

    Project Year :

    2019.04
    -
    2022.03
     

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    英語で授業を実施する体制の構築は、グローバル30（国際化拠点整備事業）が目指す最重要課題の一つである。しかし、多文化・多言語を背景にする多様な学生が混在するクラスで英語を介して講義をすることは、日本語の講義を共通語としての英語に置き換えることに留まらない様々な要因を内包している。学習スタイルや教授スタイルは文化固有であり、教員・学生双方の講義の在り方に対する認識はそれぞれの母語文化に依存しているからである。本研究では、理工系講義について英語・日本語の講義コーパスを構築し、教授言語使用にみる教授スタイルの比較分析を行い、多様な教育文化が混在するクラスでの英語を介した理工系講義の問題点を解明する

  • Elucidation of the role of language in science instruction through English and Japanese

    Project Year :

    2016.04
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    2019.03
     

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    We built and analyzed a corpus of lectures delivered in Japanese at various Japanese universities. By comparing the results with those obtained using an existing corpus of lectures delivered in English at American universities, we found that some interesting aspects of the cultural backgrounds of Japanese and American societies are reflected in the lectures. For example, lectures delivered in Japanese were more teacher centered, and included personalized transmission of knowledge, while the lectures delivered in English were more interactive and did not include so much personal description of researchers. These findings confirm predictions published in the literature about features of educational systems in countries with lower (US) and higher (Japan) power distance index (PDI)

  • Development of an online system to support English-medium instruction in science and engineering

    Project Year :

    2012.04
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    2015.03
     

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    In order to support teachers and students who are involved in English-medium instruction and are nonnative English speakers, we built the Online Corpus of Academic Lectures (OnCAL, http://www.oncal.sci.waseda.ac.jp/) from 430 lecture transcripts made available by MIT and Stanford University. We identified various pedagogical functions, which are related to different types of explanations in the classroom discourse, so that OnCAL users can see in detail how native English speakers use language in the classroom to realize each pedagogical purpose

  • Analysis of reactions forming aromatic hydrocarbons in low pressure carburizing processes

    Project Year :

    2005
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Presentations 【 display / non-display 】

  • 量子化学計算によるダイヤモンド（100）面上の二酸化炭素の吸着・還元反応の解析

    栗原令奈, 国吉ニルソン, 不破章雄, 山口 勉功

    日本化学会第99回春季大会  (神戸)  日本化学会

    Presentation date： 2019.03

  • 量子化学計算によるSi(100)面の二酸化炭素還元反応に対する触媒作用の評価

    井上岳紀, 国吉ニルソン, 不破章雄, 山口 勉功

    日本化学会第99回春季大会  (神戸)  日本化学会

    Presentation date： 2019.03

  • 量子化学計算によるSi(100)面におけるエピタクシャル成長の解析

    萩野翔, 国吉ニルソン, 不破章雄, 山口 勉功

    日本化学会第99回春季大会  (神戸)  日本化学会

    Presentation date： 2019.03

  • 量子化学計算を用いたHClによるSi(100)面のエッチング反応機構の解析

    藤村祥貴, 国吉ニルソン, 不破章雄, 山口 勉功

    日本化学会第99回春季大会  (神戸)  日本化学会

    Presentation date： 2019.03

  • Pedagogic Discourse Differences in American and Japanese Lectures: Evidence from corpora

    N. Kunioshi, J. Noguchi

    54th RELC International Conference  (Singapore)  Southeast Asian Ministers of Education Organization

    Presentation date： 2019.03

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Specific Research 【 display / non-display 】

  • Relationship between cultural background and scientific research practices

    2020   Kazuko Tojo, Judy Noguchi

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    It is known that people born and grown in different cultures act differently. This is because culture is the result of the practices people used along time and at the same time culture influences the practices of people in the present. As an example of human activity, scientific research is expected to be conducted differently in countries that differ in cultural background. In this research, the related literature was first surveyed. Differences in how science education has been delivered in the classrooms, and how students having different backgrounds react to these different practices have been reported: even in a single country like the United States, children of different ethnicity and cultural background are raised differently. Differences between how Japanese and European American mothers talk to their children have also been reported. In order to verify how the cultural background is reflected in the classroom discourse in higher education, a corpus of lectures delivered in English at two leading American universities and a corpus of lectures delivered in Japanese at a leading Japanese university by various native speakers of their respective languages were built. The purpose is to compare the corpora to identify influences of the cultural background on pedagogical practices.

  • 固体表面上の二酸化炭素の吸着および還元反応のシミュレーション研究

    2019   井上岳紀, 山口勉功

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    排出 CO2 の再利用技術 (CO2 Capture and Utilization, CCU) 開発へ貢献するために，本研究ではCO2分子が固体材料の表面に吸着し，吸着後に気相から表面に接近した分子と反応する過程を想定して，その化学反応動力学を解析した．先行研究に基づき，まずはシリコンを固体材料として想定し，CO2分子の吸着反応およびその後のH2との反応をシミュレーションした．シリコン結晶をモデル化するためにシリコン原子からなるクラスターを用い，Gaussian16分子軌道ソフトウェアを使用してSi(100)面上の反応動力学を解析した．Si(100)面，Si(110) 面，Si(111)面上でCO2吸着が吸着したが，Si(100) 面上ではH2との還元反応が最も効率よく進行する傾向があることがわかった．

  • 二酸化炭素を炭素源として再利用するための材料探索に関するシミュレーション研究

    2018   山口勉功, 井上岳紀, 栗原令奈

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    シリコン結晶(100)面上で二酸化炭素分子が起こす反応をシミュレーションした．まず，吸着反応の活性化エネルギーは約 3 kcal/mol と小さく，二酸化炭素は簡単に Si(100) 上で吸着されることがわかった．吸着された CO2 の構造として，C-O結合の一つが Si-Si ダイマーの上に載った形となる．吸着後の CO2 は，気相から近づく H2 分子と反応して，HCOOH (ギ酸）となって脱着する可能性はあることを明らかにした．この反応の活性化エネルギーは約 20 kcal/mol であり，気相中で CO2 + H2 から HCOOH を生成させる場合の活性化エネルギー (74 kcal/mol) よりも小さい．つまり，シリコン結晶には，CO2 の還元反応を促進させる触媒作用があることを示唆した結果を得た．

  • 結晶シリコンのエピタキシャル成長における反応解析

    2017   藤村祥貴, 萩野翔, 豊嶋龍樹, 山口勉功

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    シリコン結晶の表面成長の機構を解明するために以前から研究を行っており，結晶表面をモデル化するために原子クラスターを用いてきた．2017年度では，クラスターが H 原子に被覆 (H-passivation) されている場合の吸着反応の機構を調べた．並行に並んだ3個の表面ダイマーを含み，H　原子に被覆された　P3H6　クラスターに SiCl2 分子が吸着されるが，H 原子に被覆されていないクラスターの場合と比べて活性化エネルギーが大きかった．この活性化エネルギー増加によって SiCl2 が　H 原子に被覆されたクラスターから脱着しにくくなり，H-passivation が結晶成長を後押しすることがわかった．

  • シリコン結晶における表面成長反応のモデル化

    2016  

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    シリコン結晶の成長反応機構を解明するために，気相中で生じる素反応および結晶表面で生じる反応を解析した．従来の研究に対象とされてこなかった，気相反応の圧力依存性を取り上げ，その速度定数を温度・圧力の関数として求めた．まず，SiCl2 + SiHCl3からの化学活性化反応を詳細に解析した．この反応が進行すると，Si2HCl5が中間体として生成し，圧力・温度の条件によっては複数の生成物に分解することがわかった．また，シリコン原子からなるクラスターを用いて結晶を近似して，以前から解析をしてきたHClやSiCl2の吸着反応の速度定数を求めた．

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Syllabus 【 display / non-display 】

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