Concurrent Post
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Faculty of Science and Engineering Graduate School of Advanced Science and Engineering
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Faculty of Science and Engineering Graduate School of Fundamental Science and Engineering
Details of a Researcher
Updated on 2022/05/19
Faculty of Science and Engineering Graduate School of Advanced Science and Engineering
Faculty of Science and Engineering Graduate School of Fundamental Science and Engineering
理工学術院総合研究所 兼任研究員
Waseda University Science and Engineering Electrical Engineering
Waseda University Science and Engineering Electrical Engineering
Waseda University Faculty of Science and Engineering
早稲田大学 工学博士
doctor of engineering
Nagoya University Institute of Materials and Systems for Sustainability Visiting Professor
Alexander von Humboldt Foundation Fraunhofer Institute for Applied Solid State Physics Research Fellowship
Waseda University School of Science and Engineering Professor
Waseda University School of Science and Engineering Associate Professor
Osaka University Department of electrical engineering assistant
Waseda University Department of science and engineering, Assistant
Hitachi,Ltd Semiconductor & Integrated Circuits Division
Hitachi,Ltd Semiconductor & Integrated Circuits Division
The Japan Society of Applied Physics and Related Societies
Electric and electronic materials
Semiconductor Engineering
ナノ・材料
MOSFET on polycrystalline diamond
Nanotechnology / Materials
Vertically oriented graphite layers on diamond substrate
Nanotechnology / Materials
Boron-doped nanocrystalline diamond as a p-type transparent electrode
Nanotechnology / Materials
Development of new electric wireless seawater communication
Nanotechnology / Materials
Crystal analysis of grain boundaries in boron-doped diamond superconducting quantum interference devices operating above liquid helium temperature
Aoi Morishita, Shotaro Amano, Ikuto Tsuyuzaki, Taisuke Kageura, Yasuhiro Takahashi, Minoru Tachiki, Shuuichi Ooi, Miwako Takano, Shunichi Arisawa, Yoshihiko Takano, Hiroshi Kawarada
Carbon 181 379 - 388 2021.08
Low ON-Resistance (2.5 mΩ · cm2) Vertical-Type 2-D Hole Gas Diamond MOSFETs With Trench Gate Structure
Jun Tsunoda, Masayuki Iwataki, Kiyotaka Horikawa, Shotaro Amano, Kosuke Ota, Atsushi Hiraiwa, Hiroshi Kawarada
IEEE Transactions on Electron Devices 2021.07
Space-charge-controlled field emission analysis of current conduction in amorphous and crystallized atomic-layer-deposited Al2O3 on GaN
Atsushi Hiraiwa, Kiyotaka Horikawa, Hiroshi Kawarada
Journal of Applied Physics 2021.05
Drain Current Density Over 1.1 A/mm in 2D Hole Gas Diamond MOSFETs With Regrown p++-Diamond Ohmic Contacts
Shoichiro Imanishi, Ken Kudara, Hitoshi Ishiwata, Kiyotaka Horikawa, Shotaro Amano, Masayuki Iwataki, Aoi Morishita, Atsushi Hiraiwa, Hiroshi Kawarada
IEEE Electron Device Letters 42 ( 2 ) 204 - 207 2021.02
Microstructure, morphology and magnetic property of (001)-textured MnAlGe Films on Si/SiO<inf>2</inf> substrate
Rie Y. Umetsu, Satoshi Semboshi, Yoshifuru Mitsui, Hirokazu Katsui, Yoshito Nozaki, Isamu Yuitoo, Teruaki Takeuchi, Mikiko Saito, Hiroshi Kawarada
Materials Transactions 62 ( 5 ) 680 - 687 2021
Postdeposition annealing effect on the reliability of atomic-layer-deposited Al2O3 films on GaN
Kiyotaka Horikawa, Satoshi Okubo, Hiroshi Kawarada, Atsushi Hiraiwa
Journal of Vacuum Science & Technology B 2020.11
Te Bi, Junxiong Niu, Nobutaka Oi, Masafumi Inaba, Toshio Sasaki, Hiroshi Kawarada
IEEE Transactions on Electron Devices 67 ( 10 ) 4006 - 4009 2020.10
Local initial heteroepitaxial growth of diamond (111) on Ru (0001)/c-sapphire by antenna-edge-type microwave plasma chemical vapor deposition
Wenxi Fei, Kongting Wei, Aoi Morishita, Hongxing Wang, Hiroshi Kawarada
Applied Physics Letters 2020.09
Publisher's Note: “Oxidized Si terminated diamond and its MOSFET operation with SiO2 gate insulator” [Appl. Phys. Lett. 116, 212103 (2020)]
Wenxi Fei, Te Bi, Masayuki Iwataki, Shoichiro Imanishi, Hiroshi Kawarada
Applied Physics Letters 116 ( 26 ) 269901 - 269901 2020.06
Oxidized Si terminated diamond and its MOSFET operation with SiO2 gate insulator
Wenxi Fei, Te Bi, Masayuki Iwataki, Shoichiro Imanishi, Hiroshi Kawarada
Applied Physics Letters 116 ( 21 ) 212103 - 212103 2020.05
Masayuki Iwataki, Nobutaka Oi, Kiyotaka Horikawa, Shotaro Amano, Jun Nishimura, Taisuke Kageura, Masafumi Inaba, Atsushi Hiraiwa, Hiroshi Kawarada
IEEE Electron Device Letters 41 ( 1 ) 111 - 114 2020.01 [Refereed]
Masafumi Inaba, Takumi Ochiai, Kazuyoshi Ohara, Ryogo Kato, Tasuku Maki, Toshiyuki Ohashi, Hiroshi Kawarada
Small 15 ( 48 ) 1901504 - 1901504 2019.11 [Refereed]
Masafumi Inaba, Hiroshi Kawarada, Yutaka Ohno
Applied Physics Letters 114 ( 25 ) 253504 - 253504 2019.06 [Refereed]
Triple nitrogen-vacancy centre fabrication by C5N4Hn ion implantation
Haruyama Moriyoshi, Onoda Shinobu, Higuchi Taisei, Kada Wataru, Chiba Atsuya, Hirano Yoshimi, Teraji Tokuyuki, Igarashi Ryuji, Kawai Sora, Kawarada Hiroshi, Ishii Yu, Fukuda Ryosuke, Tanii Takashi, Isoya Junichi, Ohshima Takeshi, Hanaizumi Osamu
NATURE COMMUNICATIONS 10 2019.06 [Refereed]
Wenxi Fei, M. Inaba, H. Hoshino, I. Tsuyusaki, S. Kawai, M. Iwataki, Hiroshi Kawarada
physica status solidi (a) 2019.06 [Refereed]
Normally-OFF Two-Dimensional Hole Gas Diamond MOSFETs Through Nitrogen-Ion Implantation
Nobutaka Oi, Takuya Kudo, Masafumi Inaba, Satoshi Okubo, Shinobu Onoda, Atsushi Hiraiwa, Hiroshi Kawarada
IEEE Electron Device Letters 40 ( 6 ) 933 - 936 2019.06 [Refereed]
Shozo Kono, Taisuke Kageura, Yuya Hayashi, Sung-Gi Ri, Tokuyuki Teraji, Daisuke Takeuchi, Masahiko Ogura, Hideyuki Kodama, Atsuhito Sawabe, Masafumi Inaba, Atsushi Hiraiwa, Hiroshi Kawarada
Diamond and Related Materials 93 105 - 130 2019.03 [Refereed]
Nitrogen-Terminated Diamond Surface for Nanoscale NMR by Shallow Nitrogen-Vacancy Centers
Kawai Sora, Yamano Hayate, Sonoda Takahiro, Kato Kanami, Buendia Jorge J, Kageura Taisuke, Fukuda Ryosuke, Okada Takuma, Tanii Takashi, Higuchi Taisei, Haruyama Moriyoshi, Yamada Keisuke, Onoda Shinobu, Ohshima Takeshi, Kada Wataru, Hanaizumi Osamu, Stacey Alastair, Teraji Tokuyuki, Kono Shozo, Isoya Junichi, Kawarada Hiroshi
JOURNAL OF PHYSICAL CHEMISTRY C 123 ( 6 ) 3594 - 3604 2019.02 [Refereed]
Carboxyl-functionalized graphene SGFET: pH sensing mechanism and reliability of anodization
Falina, S., Syamsul, M., Iyama, Y., Hasegawa, M., Koga, Y., Kawarada, H.
Diamond and Related Materials 91 2019
Carbon Nanotube Forests on SiC: Structural and Electrical Properties
Masafumi Inaba, Wataru Norimatsu, Michiko Kusunoki, Hiroshi Kawarada
Novel Structured Metallic and Inorganic Materials 605 - 620 2019 [Refereed]
3.8W/mm RF Power Density for ALD Al2O3-Based Two-Dimensional Hole Gas Diamond MOSFET Operating at Saturation Velocity
Imanishi, Shoichiro, Horikawa, Kiyotaka, Oi, Nobutaka, Okubo, Satoshi, Kageura, Taisuke, Hiraiwa, Atsushi, Kawarada, Hiroshi
Ieee Electron Device Letters 40 ( 2 ) 279 - 282 2019 [Refereed]
Deoxyribonucleic-acid-sensitive Polycrystalline Diamond Solution-gate 3 Field-effect Transistor with Carboxyl-terminated boron-doped 4 Channel
Yukihiro Shintani, Shoji Ibori, Hiroshi Kawarada
Analytical Sciences 2019 [Refereed]
Irradiation-Induced Modification of the Superconducting Properties of Heavily-Boron-Doped Diamond
Creedon, D. L., Jiang, Y., Ganesan, K., Stacey, A., Kageura, T., Kawarada, H., McCallum, J. C., Johnson, B. C., Prawer, S., Jarnieson, D. N.
Physical Review Applied 10 ( 4 ) 2018
Ionic-liquid-gating setup for stable measurements and reduced electronic inhomogeneity at low temperatures
Takahide, Yamaguchi, Sasama, Yosuke, Takeya, Hiroyuki, Takano, Yoshihiko, Kageura, Taisuke, Kawarada, Hiroshi
Review of Scientific Instruments 89 ( 10 ) 2018 [Refereed]
Superconductivity in nano- and micro-patterned high quality single crystalline boron-doped diamond films
Kageura, Taisuke, Hideko, Masakuni, Tsuyuzaki, Ikuto, Amano, Shotaro, Morishita, Aoi, Yamaguchi, Takahide, Takano, Yoshihiko, Kawarada, Hiroshi
Diamond and Related Materials 90 181 - 187 2018 [Refereed]
Heteroepitaxial Diamond Field-Effect Transistor for High Voltage Applications
Syamsul, Mohd, Oi, Nobutaka, Okubo, Satoshi, Kageura, Taisuke, Kawarada, Hiroshi
Ieee Electron Device Letters 39 ( 1 ) 51 - 54 2018 [Refereed]
In-plane electrical conduction mechanisms of highly dense carbon nanotube forests on silicon carbide
Matsuda, Keita, Norimatsu, Wataru, Bao, Jianfeng, Kawarada, Hiroshi, Kusunoki, Michiko
Journal of Applied Physics 123 ( 4 ) 145104/1 - 145104/7 2018 [Refereed]
Time-dependent dielectric breakdown of atomic-layer-deposited Al2O3 films on GaN
Hiraiwa, Atsushi, Sasaki, Toshio, Okubo, Satoshi, Horikawa, Kiyotaka, Kawarada, Hiroshi
Journal of Applied Physics 123 ( 15 ) 155303/1 - 155303/9 2018 [Refereed]
Electrical contact properties between carbon nanotube ends and a conductive atomic force microscope tip
Inaba, Masafumi, Ohara, Kazuyoshi, Shibuya, Megumi, Ochiai, Takumi, Yokoyama, Daisuke, Norimatsu, Wataru, Kusunoki, Michiko, Kawarada, Hiroshi
Journal of Applied Physics 123 ( 24 ) 244502/1 - 244502/8 2018 [Refereed]
Falina, Shaili, Kawai, Sora, Oi, Nobutaka, Yamano, Hayate, Kageura, Taisuke, Suaebah, Evi, Inaba, Masafumi, Shintani, Yukihiro, Syamsul, Mohd, Kawarada, Hiroshi
Sensors 18 ( 7 ) 2178/1 - 2178/10 2018 [Refereed]
Vertical-type two-dimensional hole gas diamond metal oxide semiconductor field-effect transistors
Oi, Nobutaka, Inaba, Masafumi, Okubo, Satoshi, Tsuyuzaki, Ikuto, Kageura, Taisuke, Onoda, Shinobu, Hiraiwa, Atsushi, Kawarada, Hiroshi
Scientific Reports 8 10660/1 - 10660/10 2018 [Refereed]
Fukuda, Ryosuke, Balasubramanian, Priyadharshini, Higashimata, Itaru, Koike, Godai, Okada, Takuma, Kagami, Risa, Teraji, Tokuyuki, Onoda, Shinobu, Haruyama, Moriyoshi, Yamada, Keisuke, Inaba, Masafumi, Yamano, Hayate, Stuerner, Felix M., Schmitt, Simon, McGuinness, Liam P., Jelezko, Fedor, Ohshima, Takeshi, Shinada, Takahiro, Kawarada, Hiroshi, Kada, Wataru, Hanaizumi, Osamu, Tanii, Takashi, Isoya, Junichi
New Journal of Physics 20 ( 8 ) 083029 - 083029 2018 [Refereed]
Sheet resistance underneath the Au ohmic-electrode on hydrogen-terminated surface-conductive diamond (001)
S. Kono, T. Sasaki, M. Inaba, A. Hiraiwa, H. Kawarada
DIAMOND AND RELATED MATERIALS 80 93 - 98 2017.11 [Refereed]
Fabrication of photo-electrochemical biosensors for ultrasensitive screening of mono-bioactive molecules: the effect of geometrical structures and crystal surfaces
Naeem Akhtar, Mohammed Y. Emran, Mohamed A. Shenashen, Hesham Khalifa, Tetsuya Osaka, Ahmed Faheem, Takayuki Homma, Hiroshi Kawarada, Sherif A. El-Safty
JOURNAL OF MATERIALS CHEMISTRY B 5 ( 39 ) 7985 - 7996 2017.10 [Refereed]
ALL-SOLID-STATE PH SENSOR WITH FLUORINE-TERMINATED DIAMOND SURFACE
新谷幸弘, 川原田洋
Chemical Sensors 33 ( Supplement B ) 112‐114 2017.09
Vertical edge graphite layer on recovered diamond (001) after high-dose ion implantation and high-temperature annealing
Masafumi Inaba, Akinori Seki, Kazuaki Sato, Tomoyoshi Kushida, Taisuke Kageura, Hayate Yamano, Atsushi Hiraiwa, Hiroshi Kawarada
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 254 ( 9 ) 1700040 - 1700040 2017.09 [Refereed]
Threshold voltage control of electrolyte solution gate field-effect transistor by electrochemical oxidation
Takuro Naramura, Masafumi Inaba, Sho Mizuno, Keisuke Igarashi, Eriko Kida, Shaili Falina Mohd Sukri, Yukihiro Shintani, Hiroshi Kawarada
APPLIED PHYSICS LETTERS 111 ( 1 ) 013505/1 - 013505/5 2017.07 [Refereed]
Aptamer-Based Carboxyl-Terminated Nanocrystalline Diamond Sensing Arrays for Adenosine Triphosphate Detection
Evi Suaebah, Takuro Naramura, Miho Myodo, Masataka Hasegawa, Shuichi Shoji, Jorge J. Buendia, Hiroshi Kawarada
SENSORS 17 ( 7 ) 1686/1 - 1686/13 2017.07 [Refereed]
High Voltage Stress Induced in Transparent Polycrystalline Diamond Field-Effect Transistor and Enhanced Endurance Using Thick Al2O3 Passivation Layer
Mohd Syamsul, Yuya Kitabayashi, Takuya Kudo, Daisuke Matsumura, Hiroshi Kawarada
IEEE ELECTRON DEVICE LETTERS 38 ( 5 ) 607 - 610 2017.05 [Refereed]
Effect of a radical exposure nitridation surface on the charge stability of shallow nitrogen-vacancy centers in diamond
Taisuke Kageura, Kanami Kato, Hayate Yamano, Evi Suaebah, Miki Kajiya, Sora Kawai, Masafumi Inaba, Takashi Tanii, Moriyoshi Haruyama, Keisuke Yamada, Shinobu Onoda, Wataru Kada, Osamu Hanaizumi, Tokuyuki Teraji, Junichi Isoya, Shozo Kono, Hiroshi Kawarada
APPLIED PHYSICS EXPRESS 10 ( 5 ) 055503 /1 - 055503 /4 2017.05 [Refereed]
An All-Solid-State pH Sensor Employing Fluorine-Terminated Polycrystalline Boron-Doped Diamond as a pH-Insensitive Solution-Gate Field-Effect Transistor
Yukihiro Shintani, Mikinori Kobayashi, Hiroshi Kawarada
SENSORS 17 ( 5 ) 1040/1 - 1040/7 2017.05 [Refereed]
Charge state stabilization of shallow nitrogen vacancy centers in diamond by oxygen surface modification
Hayate Yamano, Sora Kawai, Kanami Kato, Taisuke Kageura, Masafumi Inaba, Takuma Okada, Itaru Higashimata, Moriyoshi Haruyama, Takashi Tanii, Keisuke Yamada, Shinobu Onoda, Wataru Kada, Osamu Hanaizumi, Tokuyuki Teraji, Junichi Isoya, Hiroshi Kawarada
Japanese Journal of Applied Physics 56 ( 4 ) 04CK08/1 - 04CK08/7 2017.04 [Refereed]
Normally-Off C-H Diamond MOSFETs With Partial C-O Channel Achieving 2-kV Breakdown Voltage
Yuya Kitabayashi, Takuya Kudo, Hidetoshi Tsuboi, Tetsuya Yamada, Dechen Xu, Masanobu Shibata, Daisuke Matsumura, Yuya Hayashi, Mohd Syamsul, Masafumi Inaba, Atsushi Hiraiwa, Hiroshi Kawarada
IEEE ELECTRON DEVICE LETTERS 38 ( 3 ) 363 - 366 2017.03 [Refereed]
Smart Power Devices and ICs Using GaAs and Wide and Extreme Bandgap Semiconductors
T. Paul Chow, Ichiro Omura, Masataka Higashiwaki, Hiroshi Kawarada, Vipindas Pala
IEEE TRANSACTIONS ON ELECTRON DEVICES 64 ( 3 ) 856 - 873 2017.03 [Refereed]
Post-deposition-annealing effect on current conduction in Al2O3 films formed by atomic layer deposition with H2O oxidant
Atsushi Hiraiwa, Daisuke Matsumura, Satoshi Okubo, Hiroshi Kawarada
JOURNAL OF APPLIED PHYSICS 121 ( 7 ) 074502/1 - 074502/8 2017.02 [Refereed]
Durability-enhanced two-dimensional hole gas of C-H diamond surface for complementary power inverter applications
Hiroshi Kawarada, Tetsuya Yamada, Dechen Xu, Hidetoshi Tsuboi, Yuya Kitabayashi, Daisuke Matsumura, Masanobu Shibata, Takuya Kudo, Masafumi Inaba, Atsushi Hiraiwa
SCIENTIFIC REPORTS 7 42368/1 - 42368/8 2017.02 [Refereed]
Aptamer strategy for ATP detection on nanocrystalline diamond functionalized by a nitrogen and hydrogen radical beam system
E. Suaebah, Y. Seshimo, M. Shibata, S. Kono, M. Hasegawa, H. Kawarada
JOURNAL OF APPLIED PHYSICS 121 ( 4 ) 044506/1 - 044506/6 2017.01 [Refereed]
High voltage breakdown (1.8 kV) of hydrogenated black diamond field effect transistor
M. Syamsul, Y. Kitabayashi, D. Matsumura, T. Saito, Y. Shintani, H. Kawarada
APPLIED PHYSICS LETTERS 109 ( 20 ) 203504/1 - 203504/4 2016.11 [Refereed]
Spin-induced anomalous magnetoresistance at the (100) surface of hydrogen-terminated diamond
Yamaguchi Takahide, Yosuke Sasama, Masashi Tanaka, Hiroyuki Takeya, Yoshihiko Takano, Taisuke Kageura, Hiroshi Kawarada
PHYSICAL REVIEW B 94 ( 16 ) 161301/1 - 161301/5 2016.10 [Refereed]
Polycrystalline boron-doped diamond with an oxygen-terminated surface channel as an electrolyte-solution-gate field-effect transistor for pH sensing
Yukihiro Shintani, Shoji Ibori, Keisuke Igarashi, Takuro Naramura, Masafumi Inaba, Hiroshi Kawarada
ELECTROCHIMICA ACTA 212 10 - 15 2016.09 [Refereed]
Effect of atomic layer deposition temperature on current conduction in Al2O3 films formed using H2O oxidant
Atsushi Hiraiwa, Daisuke Matsumura, Hiroshi Kawarada
JOURNAL OF APPLIED PHYSICS 120 ( 8 ) 084504/1 - 084504/10 2016.08 [Refereed]
Hydrogen-terminated diamond vertical-type metal oxide semiconductor field-effect transistors with a trench gate
Masafumi Inaba, Tsubasa Muta, Mikinori Kobayashi, Toshiki Saito, Masanobu Shibata, Daisuke Matsumura, Takuya Kudo, Atsushi Hiraiwa, Hiroshi Kawarada
APPLIED PHYSICS LETTERS 109 ( 3 ) 033503/1 - 033503/4 2016.07 [Refereed]
Contact Conductivity of Uncapped Carbon Nanotubes Formed by Silicon Carbide Decomposition
Masafumi Inaba, Chih-Yu Lee, Kazuma Suzuki, Megumi Shibuya, Miho Myodo, Yu Hirano, Wataru Norimatsu, Michiko Kusunoki, Hiroshi Kawarada
JOURNAL OF PHYSICAL CHEMISTRY C 120 ( 11 ) 6232 - 6238 2016.03 [Refereed]
Radially oriented nanostrand electrodes to boost glucose sensing in mammalian blood
Naeem Akhtar, Sherif A. El-Safty, Mamdouh E. Abdelsalam, Mohamed A. Shenashen, Hiroshi Kawarada
BIOSENSORS & BIOELECTRONICS 77 656 - 665 2016.03 [Refereed]
Space-charge-controlled field emission model of current conduction through Al2O3 films
Atsushi Hiraiwa, Daisuke Matsumura, Hiroshi Kawarada
JOURNAL OF APPLIED PHYSICS 119 ( 6 ) 064505/1 - 064505/13 2016.02 [Refereed]
Ohmic contact for silicon carbide by carbon nanotubes
Masafumi Inaba, Kazuma Suzuki, Yu Hirano, Wataru Norimatsu, Michiko Kusunoki, Hiroshi Kawarada
Materials Science Forum 858 561 - 564 2016 [Refereed]
Diamond MOSFETs using 2D Hole Gas with 1700V Breakdown Voltage
H. Kawarada, T. Yamada, D. Xu, Y. Kitabayashi, M. Shibata, D. Matsumura, M. Kobayashi, T. Saito, T. Kudo, M. Inaba, A. Hiraiwa
2016 28TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD) 483 - 486 2016 [Refereed]
One-Pot Fabrication of Dendritic NiO@carbon-nitrogen Dot Electrodes for Screening Blood Glucose Level in Diabetes
Naeem Akhtar, Sherif A. El-Safty, Mamdouh E. Abdelsalam, Hiroshi Kawarada
ADVANCED HEALTHCARE MATERIALS 4 ( 14 ) 2110 - 2119 2015.10 [Refereed]
Electron transport dependence of nanoscale hemeprotein molecular structures for engineering electrochemical nanosensor
Naeem Akhtar, Sherif A. El-Safty, Mamdouh E. Abdelsalam, Hiroshi Kawarada
Nano-Structures and Nano-Objects 2 35 - 44 2015.08 [Refereed]
Isotope analysis of diamond-surface passivation effect of high-temperature H2O-grown atomic layer deposition-Al2O3 films
Atsushi Hiraiwa, Tatsuya Saito, Daisuke Matsumura, Hiroshi Kawarada
JOURNAL OF APPLIED PHYSICS 117 ( 21 ) 215304/1 - 215304/10 2015.06 [Refereed]
Large-current-controllable carbon nanotube field-effect transistor in electrolyte solution
Miho Myodo, Masafumi Inaba, Kazuyoshi Ohara, Ryogo Kato, Mikinori Kobayashi, Yu Hirano, Kazuma Suzuki, Hiroshi Kawarada
APPLIED PHYSICS LETTERS 106 ( 21 ) 213503/1 - 213503/4 2015.05 [Refereed]
Blocking characteristics of diamond junctions with a punch-through design
Atsushi Hiraiwa, Hiroshi Kawarada
JOURNAL OF APPLIED PHYSICS 117 ( 12 ) 124503/1 - 124503/6 2015.03 [Refereed]
Very low Schottky barrier height at carbon nanotube and silicon carbide interface
Masafumi Inaba, Kazuma Suzuki, Megumi Shibuya, Chih-Yu Lee, Yoshiho Masuda, Naoya Tomatsu, Wataru Norimatsu, Atsushi Hiraiwa, Michiko Kusunoki, Hiroshi Kawarada
APPLIED PHYSICS LETTERS 106 ( 12 ) 123501/1 - 123501/5 2015.03 [Refereed]
Signature of high $T_c$ around 25K in higher quality heavily boron-doped diamond
H. Okazaki, T. Wakita, T. Muro, T. Nakamura, Y. Muraoka, T. Yokoya, S. Kurihara, H. Kawarada, T. Oguchi, Y. Takano
Appl. Phys. Lett. 2015.02 [Refereed]
Repulsive effects of hydrophobic diamond thin films on biomolecule detection
A. Rahim Ruslinda, Y. Ishiyama, V. Penmatsa, S. Ibori, H. Kawarada
APPLIED SURFACE SCIENCE 328 314 - 318 2015.02 [Refereed]
Room-temperature amorphous alloy field-effect transistor exhibiting particle and wave electronic transport
M. Fukuhara, H. Kawarada
JOURNAL OF APPLIED PHYSICS 117 ( 8 ) 084302/1 - 084302/5 2015.02 [Refereed]
Signature of high T-c above 25 K in high quality superconducting diamond
Hiroyuki Okazaki, Takanori Wakita, Takayuki Muro, Tetsuya Nakamura, Yuji Muraoka, Takayoshi Yokoya, Shin-ichiro Kurihara, Hiroshi Kawarada, Tamio Oguchi, Yoshihiko Takano
APPLIED PHYSICS LETTERS 106 ( 5 ) 052601/1 - 052601/4 2015.02 [Refereed]
Functionalized carbon microarrays platform for high sensitive detection of HIV-Tat peptide
Varun Penmatsa, Ruslinda A. Rahim, Hiroshi Kawarada, Chunlei Wang
RSC ADVANCES 5 ( 80 ) 65042 - 65047 2015 [Refereed]
Direct Partial CH3 Termination into Carboxyl Terminated Diamond Surface for Biosensor
Evi Suaebah, Takuro Naramura, Hiroshi Kawarada
2015 IEEE SENSORS 1597 - 1600 2015 [Refereed]
Depth Profiles of Absorbed Hydrogen in Ni-Nb-Zr Amorphous Alloy Ribbons by Glow Discharge Optical Emission Spectroscopy
R. Y. Umetsu, M. Saito, T. Sasaki, T. Sekiguchi, J. Mizuno, H. Kawarada
Open Journal of Metal 4 ( 4 ) 112 - 119 2014.12 [Refereed]
ダイヤモンド・トランジスタのバイオセンシングへの適用
H. Kawarada
化学と工業 67 ( 11 ) 983 - 985 2014.11 [Refereed] [Invited]
Substitution Effects of Cr or Fe on the Curie Temperature for Mn-Based Layered Compounds MnAlGe and MnGaGe With Cu2Sb-Type Structure
Rie Y. Umetsu, Yoshifuru Mitsui, Isamu Yuito, Teruaki Takeuchi, Hiroshi Kawarada
IEEE TRANSACTIONS ON MAGNETICS 50 ( 11 ) 1001904/1 - 1001904/4 2014.11 [Refereed]
新谷幸弘, 小河晃太朗, 猿谷敏之, 川原田洋
Chem Sens 30 ( Supplement B ) 64 - 66 2014.09
C-H surface diamond field effect transistors for high temperature (400 degrees C) and high voltage (500 V) operation
H. Kawarada, H. Tsuboi, T. Naruo, T. Yamada, D. Xu, A. Daicho, T. Saito, A. Hiraiwa
APPLIED PHYSICS LETTERS 105 ( 1 ) 013510/1 - 013510/4 2014.07 [Refereed]
High-reliability passivation of hydrogen-terminated diamond surface by atomic layer deposition of Al2O3
Akira Daicho, Tatsuya Saito, Shinichiro Kurihara, Atsushi Hiraiwa, Hiroshi Kawarada
JOURNAL OF APPLIED PHYSICS 115 ( 22 ) 223711/1 - 003711/4 2014.06 [Refereed]
Diamond surface conductivity: Properties, devices, and sensors
Christopher I. Pakes, Jose A. Garrido, Hiroshi Kawarada
MRS BULLETIN 39 ( 6 ) 542 - 548 2014.06 [Refereed]
Quantum oscillations of the two-dimensional hole gas at atomically flat diamond surfaces
Yamaguchi Takahide, Hiroyuki Okazaki, Keita Deguchi, Shinya Uji, Hiroyuki Takeya, Yoshihiko Takano, Hidetoshi Tsuboi, Hiroshi Kawarada
PHYSICAL REVIEW B 89 ( 23 ) 235304/1 - 235304/5 2014.06 [Refereed]
Wide Temperature (10K-700K) and High Voltage (similar to 1000V) Operation of C-H Diamond MOSFETs for Power Electronics Application
H. Kawarada, T. Yamada, D. Xu, H. Tsuboi, T. Saito, A. Hiraiwa
2014 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) 11.2.1 - 11.2.4 2014 [Refereed]
Synthesis and diffusion of MnBi in high magnetic fields
M. Mitsui, R.Y. Umetsu, M. Saito, K. Koyama, H. Kawarada
The International Symposium on Ecotopia Science 2013 and The 5th International Symposium on Advanced Materials Development and Integration of Novel Structural Metallic and Inorganic Materials (ISETS’13 and AMDI-4) 1317 2013.12
Analyzing Hydrogen Charging pf Sputtered Ni-Nb-Zr Films Using Electrochemical Method
M. Saito, R.Y. Umetsu, T. Sasaki, T. Sekiguch, J. Mizuno, H. Kawarada
ovel Structural Metallic and Inorganic Materials (ISETS’13 and AMDI-4) 1229 2013.12
Depth Profile Analysis of Hydrogen in Ni-Nb-Zr Amorphous Ribbon by Glow Discharge Optical Emission Spectrometry
R.Y. Umetsu, M. Saito, T. Sasaki, T. Sekiguch, J. Mizuno, H. Kawarada
The International Symposium on Ecotopia Science 2013 and The 5th International Symposium on Advanced Materials Development and Integration of Novel Structural Metallic and Inorganic Materials (ISETS’13 and AMDI-4) 1235 2013.12
Magnetic properties and phase state of layered compound of (Mn,TM)XGe (TM = Fe and Cr, X = Al and Ga)
R.Y. Umetsu, Y. Mitsui, I. Yuito, T. Takeuchi, H. Kawarada
The International Symposium on Ecotopia Science 2013 and The 5th International Symposium on Advanced Materials Development and Integration of Novel Structural Metallic and Inorganic Materials (ISETS’13 and AMDI-4) 1250 2013.12
Transport Properties of Ni-Nb-Zr Glassy Alloys and Hydrogen Absorbed Alloys
Rie Y. Umetsu, Hajime Yoshida, Mikio Fukuhara, Shin-ichi Yamaura, Toshio Sasaki, Tetsushi Sekiguchi, Mikiko Saito, Jun Mizuno, Hiroshi Kawarada
OJMetal 3 ( 3 ) 45 - 49 2013.09 [Refereed]
Low-Temperature Transport Properties of Holes Introduced by Ionic Liquid Gating in Hydrogen-Terminated Diamond Surfaces
Takahide Yamaguchi, Eiichiro Watanabe, Hirotaka Osato, Daiju Tsuya, Keita Deguchi, Tohru Watanabe, Hiroyuki Takeya, Yoshihiko Takano, Shinichiro Kurihara, Hiroshi Kawarada
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN 82 ( 7 ) 074718/1 - 074718/6 2013.07 [Refereed]
Figure of merit of diamond power devices based on accurately estimated impact ionization processes
Atsushi Hiraiwa, Hiroshi Kawarada
J. Appl. Phys. 114 ( 3 ) 034506/1 - 034506/9 2013.07
Understanding the stability of a sputtered Al buffer layer for single-walled carbon nanotube forest synthesis
Toshiyuki Ohashi, Ryogo Kato, Toshio Tokune, Hiroshi Kawarada
CARBON 57 401 - 409 2013.06 [Refereed]
Increasing the length of a single-wall carbon nanotube forest by adding titanium to a catalytic substrate
Toshiyuki Ohashi, Takumi Ochiai, Toshio Tokune, Hiroshi Kawarada
Carbon 57 79 - 87 2013.06
SPATIAL VARIATION OF TUNNELING SPECTRA IN (111)-ORIENTED FILMS OF BORON-DOPED DIAMOND PROBED BY STM/STS
Terukazu Nishizaki, Takahiko Sasaki, Norio Kobayashi, Yoshihiko Takano, Masanori Nagao, Hiroshi Kawarada
INTERNATIONAL JOURNAL OF MODERN PHYSICS B 27 ( 15 ) 1362014/1 - 1362014/7 2013.06 [Refereed]
新谷幸弘, 明道三穗, 井堀翔志, 川原田洋
Chem Sens 29 ( Supplement A ) 16 - 18 2013.03
Effects of diamond-FET-based RNA aptamer sensing for detection of real sample of HIV-1 Tat protein
A. Rahim Ruslinda, Kyosuke Tanabe, Shoji Ibori, Xianfen Wang, Hiroshi Kawarada
BIOSENSORS & BIOELECTRONICS 40 ( 1 ) 277 - 282 2013.02 [Refereed]
Effect of hydrogen and cluster morphology on the electronic behavior of Ni-Nb-Zr-H glassy alloys with subnanometer-sized icosahedral Zr5Ni5Nb5 clusters
Mikio Fukuhara, Hajime Yoshida, Hiroshi Kawarada
EUROPEAN PHYSICAL JOURNAL D 67 ( 2 ) 40/1 - 40/4 2013.02 [Refereed]
Platelet-derived growth factor oncoprotein detection using three-dimensional carbon microarrays
Varun Penmatsa, A. Rahim Ruslinda, Majid Beidaghi, Hiroshi Kawarada, Chunlei Wang
BIOSENSORS & BIOELECTRONICS 39 ( 1 ) 118 - 123 2013.01 [Refereed]
Functionalized three-dimensional carbon microarrays for cancer biomarker detection
V. Penmatsa, A. R. Ruslinda, M. Beidaghi, H. Kawarada, C. Wang
ECS Transactions 45 ( 15 ) 7 - 14 2013
Effect of hydrogen absorption on electrical transport properties for Ni36Nb24Zr40 amorphous alloy ribbons
Rie Y. Umetsu, Hajime Yoshida, Mikio Fukuhara, Shin-Ichi Yamaura, Makoto Matsuura, Toshio Sasaki, Tetsushi Sekiguchi, Mikiko Saito, Jun Mizuno, Hiroshi Kawarada
Materials Transactions 54 ( 8 ) 1339 - 1342 2013
Accuracy assessment of sheet-charge approximation for Fowler-Nordheim tunneling into charged insulators
Atsushi Hiraiwa, Tatsuya Saito, Akira Daicho, Hiroshi Kawarada
Journal of Applied Physics 114 ( 13 ) 134501/1 - 134501/9 2013
Refractory two-dimensional hole gas on hydrogenated diamond surface
Atsushi Hiraiwa, Akira Daicho, Shinichiro Kurihara, Yuki Yokoyama, Hiroshi Kawarada
JOURNAL OF APPLIED PHYSICS 112 ( 12 ) 124504 2012.12 [Refereed]
Mesoporous NiO nanomagnets as catalysts and separators of chemical agents
Mohamed Khairy, Sherif A. El-Safty, Mohamed Ismael, Hiroshi Kawarada
APPLIED CATALYSIS B-ENVIRONMENTAL 127 ( 1-10 ) 1 - 10 2012.10 [Refereed]
High Priority of Nanocrystalline Diamond as a Biosensing Platform
Xianfen Wang, Shinichiro Kurihara, Masataka Hasegawa, A. Rahim Ruslinda, Hiroshi Kawarada
JAPANESE JOURNAL OF APPLIED PHYSICS 51 ( 9 ) 090125 2012.09 [Refereed]
Multidirectional porous NiO nanoplatelet-like mosaics as catalysts for green chemical transformations
Sherif A. El-Safty, Mohamed Khairy, Mohamd Ismael, Hiroshi Kawarada
APPLIED CATALYSIS B-ENVIRONMENTAL 123 162 - 173 2012.07
Multidirectional porous NiO nanoplatelet-like mosaics as catalysts for green chemical transformations
Sherif A. El-Safty, Mohamed Khairy, Mohamd Ismael, Hiroshi Kawarada
APPLIED CATALYSIS B-ENVIRONMENTAL 123 162 - 173 2012.07 [Refereed]
Effective Surface Functionalization of Nanocrystalline Diamond Films by Direct Carboxylation for PDGF Detection via Aptasensor
Xianfen Wang, Yoko Ishii, A. Rahim Ruslinda, Masataka Hasegawa, Hiroshi Kawarada
ACS APPLIED MATERIALS & INTERFACES 4 ( 7 ) 3526 - 3534 2012.07 [Refereed]
Vertical SNS weak-link Josephson junction fabricated from only boron-doped diamond
M. Watanabe, R. Kanomata, S. Kurihara, A. Kawano, S. Kitagoh, T. Yamaguchi, Y. Takano, H. Kawarada
PHYSICAL REVIEW B 85 ( 18 ) 184516 2012.05 [Refereed]
Capacitance Distribution of Ni-Nb-Zr-H Glassy Alloys
Mikio Fukuhara, Hajime Yoshida, Nobuhisa Fujima, Hiroshi Kawarada
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY 12 ( 5 ) 3848 - 3852 2012.05 [Refereed]
High quality single-walled carbon nanotube synthesis using remote plasma CVD
Toshiyuki Ohashi, Ryogo Kato, Takumi Ochiai, Toshio Tokune, Hiroshi Kawarada
DIAMOND AND RELATED MATERIALS 24 184 - 187 2012.04 [Refereed]
Controllable oxidization of boron doped nanodiamond covered with different solution via UV/ozone treatment
X. F. Wang, M. Hasegawa, K. Tsugawa, A. R. Ruslinda, H. Kawarada
DIAMOND AND RELATED MATERIALS 24 146 - 152 2012.04 [Refereed]
Boron delta-doped (1 1 1) diamond solution gate field effect transistors
Robert Edgington, A. Rahim Ruslinda, Syunsuke Sato, Yuichiro Ishiyama, Kyosuke Tsuge, Tasuku Ono, Hiroshi Kawarada, Richard B. Jackman
BIOSENSORS & BIOELECTRONICS 33 ( 1 ) 152 - 157 2012.03 [Refereed]
Growth and electrical characterisation of 6-doped boron layers on (111) diamond surfaces
Robert Edgington, Syunsuke Sato, Yuichiro Ishiyama, Richard Morris, Richard B. Jackman, Hiroshi Kawarada
JOURNAL OF APPLIED PHYSICS 111 ( 3 ) 033710 - 033710 2012.02 [Refereed]
Highly sensitive detection of platelet-derived growth factor on a functionalized diamond surface using aptamer sandwich design
A. Rahim Ruslinda, Varun Penmatsa, Yoko Ishii, Shinya Tajima, Hiroshi Kawarada
ANALYST 137 ( 7 ) 1692 - 1697 2012 [Refereed]
High Frequency Operation of H-terminated Diamond FETs
H.Kawarada
Jpn. J. Appl. Phys. 51 ( 9 ) 090111 2012
Fluorescence-Signaling Aptasensor for ATP and PDGF Detection on Functionalized Diamond Surface
A. Rahim Ruslinda, Y. Ishiyama, X. Wang, T. Kobayashi, H. Kawarada
JOURNAL OF THE ELECTROCHEMICAL SOCIETY 159 ( 5 ) J182 - J187 2012 [Refereed]
Higher coverage of carboxylic acid groups on oxidized single crystal diamond (001)
Xianfen Wang, A. Rahim Ruslinda, Yuichiro Ishiyama, Yoko Ishii, Hiroshi Kawarada
DIAMOND AND RELATED MATERIALS 20 ( 10 ) 1319 - 1324 2011.11 [Refereed]
Human immunodeficiency virus trans-activator of transcription peptide detection via ribonucleic acid aptamer on aminated diamond biosensor
A. Rahim Ruslinda, Xianfen Wang, Yoko Ishii, Yuichiro Ishiyama, Kyosuke Tanabe, Hiroshi Kawarada
APPLIED PHYSICS LETTERS 99 ( 12 ) 123702 2011.09 [Refereed]
Diamond electrolyte solution gate FETs for DNA and protein sensors using DNA/RNA aptamers
H. Kawarada, A. R. Ruslinda
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 208 ( 9 ) 2005 - 2016 2011.09 [Refereed]
Photoemission study of electronic structure evolution across the metal-insulator transition of heavily B-doped diamond
H. Okazaki, T. Arakane, K. Sugawara, T. Sato, T. Takahashi, T. Wakita, M. Hirai, Y. Muraoka, Y. Takano, S. Ishii, S. Iriyama, H. Kawarada, T. Yokoya
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS 72 ( 5 ) 582 - 584 2011.05 [Refereed]
Fabrication of Metal-Oxide-Diamond Field-Effect Transistors with Submicron-Sized Gate Length on Boron-Doped (111) H-Terminated Surfaces Using Electron Beam Evaporated SiO2 and Al2O3
Takeyasu Saito, Kyung-Ho Park, Kazuyuki Hirama, Hitoshi Umezawa, Mitsuya Satoh, Hiroshi Kawarada, Zhi-Quan Liu, Kazutaka Mitsuishi, Kazuo Furuya, Hideyo Okushi
JOURNAL OF ELECTRONIC MATERIALS 40 ( 3 ) 247 - 252 2011.03 [Refereed]
Aptasensor for Oncoprotein Platelet-Derived Growth Factor Detection on Functionalized Diamond Surface by Signal-Off Optical Method
Yoko Ishii, Shinya Tajima, Hiroshi Kawarada
APPLIED PHYSICS EXPRESS 4 ( 2 ) 027001 - 027001 2011.02 [Refereed]
Electronic structures of B 2p levels in homo-epitaxial growth boron-doped diamond by soft X-rays absorption spectroscopy
Jin Nakamura, Eiki Kabasawa, Yoshihisa Harada, Shingo Iriyama, Akihiro Kawano, Tamio Oguchi, Kazuhiko Kuroki, Yoshihiko Takano, Hiroshi Kawarada
PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS 470 S671 - S672 2010.12
Stacked SNS Josephson junction of all boron doped diamond
M. Watanabe, A. Kawano, S. Kitagoh, T. Yamaguchi, Y. Takano, H. Kawarada
PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS 470 ( SUPPL.1 ) S613 - S615 2010.12 [Refereed]
Cross-sectional TEM study and film thickness dependence of Tc in heavily boron-doped superconducting diamond
S. Kitagoh, R. Okada, A. Kawano, M. Watanabe, Y. Takano, T. Yamaguchi, T. Chikyow, H. Kawarada
PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS 470 ( SUPP.1 ) S610 - S612 2010.12 [Refereed]
Critical concentrations of superconductor to insulator transition in (111) and (001) CVD boron-doped diamond
A. Kawano, H. Ishiwata, S. Iriyama, R. Okada, S. Kitagoh, M. Watanabe, Y. Takano, T. Yamaguchi, H. Kawarada
PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS 470 ( 1 ) S604 - S607 2010.12 [Refereed]
Aptamer-based biosensor for sensitive PDGF detection using diamond transistor
A. Rahim Ruslinda, Shinya Tajima, Yoko Ishii, Yuichiro Ishiyama, Robert Edgington, Hiroshi Kawarada
BIOSENSORS & BIOELECTRONICS 26 ( 4 ) 1599 - 1604 2010.12 [Refereed]
Fabrication of calcium ion sensitive diamond field effect transistors (FETs) based on immobilized calmodulin
Jung-Hoon Yang, Munenori Degawa, Kwang-Soup Song, Chunlei Wang, Hiroshi Kawarada
MATERIALS LETTERS 64 ( 21 ) 2321 - 2324 2010.11 [Refereed]
Low drift and small hysteresis characteristics of diamond electrolyte-solution-gate FET
Yoshinori Sasaki, Hiroshi Kawarada
JOURNAL OF PHYSICS D-APPLIED PHYSICS 43 ( 37 ) 374020 2010.09 [Refereed]
Superconductor-to-insulator transition in boron-doped diamond films grown using chemical vapor deposition
Akihiro Kawano, Hitoshi Ishiwata, Shingo Iriyama, Ryosuke Okada, Takahide Yamaguchi, Yoshihiko Takano, Hiroshi Kawarada
PHYSICAL REVIEW B 82 ( 8 ) 085318 2010.08 [Refereed]
Ultrashallow TiC Source/Drain Contacts in Diamond MOSFETs Formed by Hydrogenation-Last Approach
Yoshikatsu Jingu, Kazuyuki Hirama, Hiroshi Kawarada
IEEE TRANSACTIONS ON ELECTRON DEVICES 57 ( 5 ) 966 - 972 2010.05 [Refereed]
Low-temperature synthesis of multiwalled carbon nanotubes by graphite antenna CVD in a hydrogen-free atmosphere
Daisuke Yokoyama, Takayuki Iwasaki, Kentaro Ishimaru, Shintaro Sato, Mizuhisa Nihei, Yuji Awano, Hiroshi Kawarada
CARBON 48 ( 3 ) 825 - 831 2010.03 [Refereed]
Schottky barrier heights, carrier density, and negative electron affinity of hydrogen-terminated diamond
K. Tsugawa, H. Noda, K. Hirose, H. Kawarada
PHYSICAL REVIEW B 81 ( 4 ) 045303 2010.01 [Refereed]
High-Performance P-Channel Diamond Metal-Oxide-Semiconductor Field-Effect Transistors on H-Terminated (111) Surface
Kazuyuki Hirama, Kyosuke Tsuge, Syunsuke Sato, Tetsuya Tsuno, Yoshikatsu Jingu, Shintaro Yamauchi, Hiroshi Kawarada
APPLIED PHYSICS EXPRESS 3 ( 4 ) 044001 2010 [Refereed]
Soft X-ray Core-Level Photoemission Study of Boron Sites in Heavily Boron-Doped Diamond Films
Hiroyuki Okazaki, Rikiya Yoshida, Takayuki Muro, Takanori Wakita, Masaaki Hirai, Yuji Muraoka, Yoshihiko Takano, Shingo Iriyama, Hiroshi Kawarada, Tamio Oguchi, Takayoshi Yokoya
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN 78 ( 3 ) 034703 2009.03 [Refereed]
DC and RF Performance of Diamond MISFETs with Alumina Gate Insulator
Hirama K, Jingu Y, Ichikawa M, Umezawa H, Kawarada H
Silicon Carbide and Related Materials 2007, Pts 1 and 2 600-603 1349 - 1351 2009 [Refereed]
ワイドギャップ半導体ダイヤモンドを用いた高周波高出力MOSFETの開発
平間 一行, 川原田 洋
科学と工業 83 ( 4 ) 149 - 156 2009
Low-temperature STM/STS studies on boron-doped (111) diamond films
Terukazu Nishizaki, Yoshihiko Takano, Masanori Nagao, Tomohiro Takenouchi, Hiroshi Kawarada, Norio Kobayashi
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS 69 ( 12 ) 3027 - 3030 2008.12 [Refereed]
Characterization of boron-doped diamonds using B-11 high-resolution NMR at high magnetic fields
M. Murakami, T. Shimizu, M. Tansho, Y. Takano, S. Ishii, E. A. Ekimov, V. A. Sidorov, H. Sumiya, H. Kawarada, K. Takegoshi
DIAMOND AND RELATED MATERIALS 17 ( 11 ) 1835 - 1839 2008.11
Characterization of Hybridization on Diamond Solution-Gate Field-Effect Transistors for Detecting Single Mismatched Oligonucleotides
Jung-Hoon Yang, Shouma Kuga, Kwang-Soup Song, Hiroshi Kawarada
APPLIED PHYSICS EXPRESS 1 ( 11 ) 11801 2008.11
Detection of mismatched DNA on partially negatively charged diamond surfaces by optical and potentiometric methods
Shoma Kuga, Jung-Hoon Yang, Hironori Takahashi, Kazuyuki Hiirama, Takayuki Iwasaki, Hiroshi Kawarada
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY 130 ( 40 ) 13251 - 13263 2008.10 [Refereed]
Vertically aligned carbon nanotube growth from Ni nanoparticles prepared by ion implantation
T. Iwasaki, S. Mejima, T. Koide, R. Morikane, H. Nakayama, T. Shinada, I. Ohdomari, H. Kawarada
DIAMOND AND RELATED MATERIALS 17 ( 7-10 ) 1443 - 1446 2008.07 [Refereed]
Channel mobility evaluation for diamond MOSFETs using gate-to-channel capacitance measurement
K. Hirama, H. Takayanagi, S. Yamauchi, J. H. Yang, H. Umezawa, H. Kawarada
DIAMOND AND RELATED MATERIALS 17 ( 7-10 ) 1256 - 1258 2008.07 [Refereed]
Temperature-dependent localized excitations of doped carriers in superconducting diamond
K. Ishizaka, R. Eguchi, S. Tsuda, A. Chainani, T. Yokoya, T. Kiss, T. Shimojima, T. Togashi, S. Watanabe, C.-T. Chen, Y. Takano, M. Nagao, I. Sakaguchi, T. Takenouchi, H. Kawarada, S. Shin
Physical Review Letters 100 ( 16 ) 166402 2008.04 [Refereed]
Electrical properties of carbon nanotubes grown at a low temperature for use as interconnects
Daisuke Yokoyama, Takayuki Iwasaki, Kentaro Ishimaru, Shintaro Sato, Takashi Hyakushima, Mizuhisa Nihei, Yuji Awano, Hiroshi Kawarada
JAPANESE JOURNAL OF APPLIED PHYSICS 47 ( 4 ) 1985 - 1990 2008.04 [Refereed]
Spontaneous polarization model for surface orientation dependence of diamond hole accumulation layer and its transistor performance
K. Hirama, H. Takayanagi, S. Yamauchi, J. H. Yang, H. Kawarada, H. Umezawa
APPLIED PHYSICS LETTERS 92 ( 11 ) 112107 2008.03 [Refereed]
Mechanism analysis of interrupted growth of single-walled carbon nanotube arrays
Takayuki Iwasaki, John Robertson, Hiroshi Kawarada
NANO LETTERS 8 ( 3 ) 886 - 890 2008.03 [Refereed]
Highly selective growth of vertically aligned double-walled carbon nanotubes by a controlled heating method and their electric double-layer capacitor properties
Takayuki Iwasaki, Tasuku Maki, Daisuke Yokoyama, Hironori Kumagai, Yasuhiro Hashimoto, Takuma Asari, Hiroshi Kawarada
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS 2 ( 2 ) 53 - 55 2008.03 [Refereed]
Pressure effect of superconducting transition temperature for boron-doped diamond films
F. Tomioka, S. Tsuda, T. Yamaguchi, H. Kawarada, Y. Takano
PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS 468 ( 15-20 ) 1228 - 1230 2008 [Refereed]
Near E-F electronic structure of heavily boron-doped superconducting diamond
Okazaki H, Yokoya T, Nakamura J, Yamada N, Nakamura T, Muro T, Tamenori Y, Matsushita T, Takata Y, Tokushima T, Shin S, Takano Y, Nagao M, Takenouchi T, Kawarada H, Oguchi T
Journal of Physics and Chemistry of Solids 69 ( 12 ) 2978 - 2981 2008 [Refereed]
電解質溶液ゲートFETを利用したDNAセンサー
川原田 洋
応用物理 77 ( 10 ) 1229 - 1234 2008
水素終端ダイヤモンド表面近傍に存在するp型表面蓄積層
川原田 洋, 平間 一行, 荻原 大輔
表面科学 29 ( 3 ) 144 - 155 2008
ホール蓄積層チャネルを用いた高周波ダイヤモンドFET
平間 一行, 川原田 洋
ニューダイヤモンド 90 2 - 9 2008
Functionalization of ultradispersed diamond for DNA detection
Jung-Hoon Yang, Yoshikazu Nakano, Yasunori Murakami, Kwang-Soup Song, Hiroshi Kawarada
JOURNAL OF NANOPARTICLE RESEARCH 10 69 - 75 2008 [Refereed]
B-11 nuclear magnetic resonance study on existence of boron-hydrogen complex in boron-doped diamond
Miwa Murakami, Tadashi Shimizu, Masataka Tansho, Yoshihiko Takano, Satoshi Ishii, Evaueni Ekimov, Vladimir Sidorov, Hiroshi Kawarada, Kiyonori Takegoshi
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 46 ( 45-49 ) L1138 - L1140 2007.12
Low temperature grown carbon nanotube interconnects using inner shells by chemical mechanical polishing
Daisuke Yokoyama, Takayuki Iwasaki, Tsuyoshi Yoshida, Hiroshi Kawarada, Shintaro Sato, Takashi Hyakushima, Mizuhisa Nihei, Yuji Awano
APPLIED PHYSICS LETTERS 91 ( 26 ) 263101 2007.12 [Refereed]
Core-level electronic structure evolution of heavily boron-doped superconducting diamond studied with hard x-ray photoemission spectroscopy
T. Yokoya, E. Ikenaga, M. Kobata, H. Okazaki, K. Kobayashi, A. Takeuchi, A. Awaji, Y. Takano, M. Nagao, I. Sakaguchi, T. Takenouchi, K. Kobayashi, H. Kawarada, T. Oguchi
PHYSICAL REVIEW B 75 ( 20 ) 205117 2007.05 [Refereed]
Superconducting properties of homoepitaxial CVD diamond
Y. Takano, T. Takenouchi, S. Ishii, S. Ueda, T. Okutsu, I. Sakaguchi, H. Umezawa, H. Kawarada, M. Tachiki
DIAMOND AND RELATED MATERIALS 16 ( 4-7 ) 911 - 914 2007.04 [Refereed]
Phonon softening in superconducting diamond
M. Hoesch, T. Fukuda, J. Mizuki, T. Takenouchi, H. Kawarada, J. P. Sutter, S. Tsutsui, A. Q. R. Baron, M. Nagao, Y. Takano
PHYSICAL REVIEW B 75 ( 14 ) 140508 2007.04 [Refereed]
Growth kinetics of 0.5 cm vertically aligned single-walled carbon nanotubes
Guofang Zhong, Takayuki Iwasaki, John Robertson, Hiroshi Kawarada
JOURNAL OF PHYSICAL CHEMISTRY B 111 ( 8 ) 1907 - 1910 2007.03 [Refereed]
Miniaturized diamond field-effect transistors for application in biosensors in electrolyte solution
Kwang-Soup Song, Takahiro Hiraki, Hitoshi Umezawa, Hiroshi Kawarada
APPLIED PHYSICS LETTERS 90 ( 6 ) 63901 2007.02 [Refereed]
24pXA-1 Soft x-ray photoelectron spectroscopy of heavily B-doped superconducting diamond
Okazaki H., Ishii S., Iriyama S., Kawarada H., Yokoya T., Muro T., Nakamura T., Matsushita T., Wakita T., Muraoka Y., Hirai M., Takano Y.
Meeting Abstracts of the Physical Society of Japan 62 ( 0 ) 665 - 665 2007 [Refereed]
Detection of single-mismatch DNA on hydrogen-terminated diamond surface
J. -H. Yang, S. Kuga, H. Kawarada
PROCEEDINGS OF THE 5TH JOINT MEETING ON MEDICINAL CHEMISTRY 77 - 80 2007 [Refereed]
High-performance p-channel diamond MOSFETs with alumina gate insulator
Hirama K, Takayanagi H, Yamauchi S, Jingu Y, Umezawa H, Kawarada H
2007 IEEE International Electron Devices Meeting, Vols 1 and 2 873 - 876 2007 [Refereed]
Hirama K, Takayanagi H, Yamauchi S, Umezawa H, Kawarada H
New Diamond and Frontier Carbon Technology 17 ( 4 ) 201 - 209 2007 [Refereed]
Growth of heavily boron-doped polycrystalline superconducting diamond
Umezawa H, Takenouchi T, Kobayashi K, Takano Y, Nagao M, Tachiki M, Hatano T, Kawarada H
New Diamond and Frontier Carbon Technology 17 ( 1 ) 1 - 9 2007 [Refereed]
Diamond MISFETs fabricated on high quality polycrystalline CVD diamond
Hirama K, Takayanagi H, Yamauchi S, Jingu Y, Umezawa H, Kawarada H, Ieee
Proceedings of the 19th International Symposium on Power Semiconductor Devices and Ics 269 - 272 2007 [Refereed]
Yokoya T, Nakamura T, Matsushita T, Muro T, Ikenaga E, Kobata M, Kobayashi K, Takano Y, Nagao M, Takenouchi T, Kawarada H, Oguchi T
New Diamond and Frontier Carbon Technology 17 ( 1 ) 11 - 20 2007 [Refereed]
Electronic structures of heavily boron-doped superconducting diamond films
Yokoya T, Okazaki H, Nakamura T, Matsushita T, Muro T, Ikenaga E, Kobata M, Kobayashi K, Takeuchi A, Awaji A, Takano Y, Nagao M, Takenouchi T, Kawarada H, Oguchi T
Materials Research Society Symposium Proceedings 956 39 - 46 2007 [Refereed]
Electronic devices
Hironobu Miyamoto, Manabu Arai, Hiroshi Kawarada, Naoharu Fujimori, Sadafumi Yoshida, Takashi Shinohe, Akio Hiraki, Hirohisa Hiraki, Hideomi Koinuma, Masao Katayama
Wide Bandgap Semiconductors: Fundamental Properties and Modern Photonic and Electronic Devices 231 - 280 2007
Observation of a superconducting gap in boron-doped diamond by laser-excited photoemission spectroscopy
K. Ishizaka, R. Eguchi, S. Tsuda, T. Yokoya, A. Chainani, T. Kiss, T. Shimojima, T. Togashi, S. Watanabe, C. -T. Chen, C. Q. Zhang, Y. Takano, M. Nagao, I. Sakaguchi, T. Takenouchi, H. Kawarada, S. Shin
PHYSICAL REVIEW LETTERS 98 ( 4 ) 47003 2007.01 [Refereed]
Microscopic evidence for evolution of superconductivity by effective carrier doping in boron-doped diamond: B-11-NMR study
H. Mukuda, T. Tsuchida, A. Harada, Y. Kitaoka, T. Takenouchi, Y. Takano, M. Nagao, I. Sakaguchi, T. Oguchi, H. Kawarada
PHYSICAL REVIEW B 75 ( 3 ) 33301 2007.01 [Refereed]
Characterization of DNA hybridization on partially aminated diamond by aromatic compounds
Jung-Hoon Yang, Kwang-Soup Song, Guo-Jun Zhang, Munenori Degawa, Yoshinori Sasaki, Iwao Ohdomari, Hiroshi Kawarada
LANGMUIR 22 ( 26 ) 11245 - 11250 2006.12 [Refereed]
Characterization of DNA hybridization on partially aminated diamond by aromatic compounds
Jung-Hoon Yang, Kwang-Soup Song, Guo-Jun Zhang, Munenori Degawa, Yoshinori Sasaki, Iwao Ohdomari, Hiroshi Kawarada
LANGMUIR 22 ( 26 ) 11245 - 11250 2006.12
Trapping mechanism on oxygen-terminated diamond surfaces
Yutaka Itoh, Yu Sumikawa, Hitoshi Umezawa, Hiroshi Kawarada
APPLIED PHYSICS LETTERS 89 ( 20 ) 203503 2006.11 [Refereed]
Characterization of direct immobilized probe DNA on partially functionalized diamond solution-gate field-effect transistors
Jung-Hoon Yang, Kwang-Soup Song, Shouma Kuga, Hiroshi Kawarada
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 45 ( 42-45 ) L1114 - L1117 2006.11 [Refereed]
Label-free DNA sensors using ultrasensitive diamond field-effect transistors in solution
Kwang-Soup Song, Gou-Jun Zhang, Yusuke Nakamura, Kei Furukawa, Takahiro Hiraki, Jung-Hoon Yang, Takashi Funatsu, Iwao Ohdomari, Hiroshi Kawarada
PHYSICAL REVIEW E 74 ( 4 ) 41919 2006.10 [Refereed]
Low-energy electrodynamics of superconducting diamond
M. Ortolani, S. Lupi, L. Baldassarre, U. Schade, P. Calvani, Y. Takano, M. Nagao, T. Takenouchi, H. Kawarada
PHYSICAL REVIEW LETTERS 97 ( 9 ) 97002 2006.09 [Refereed]
Semi-quantitative study on the fabrication of densely packed and vertically aligned single-walled carbon nanotubes
GF Zhong, T Iwasaki, H Kawarada
CARBON 44 ( 10 ) 2009 - 2014 2006.08 [Refereed]
pH-sensitive diamond field-effect transistors (FETs) with directly aminated channel surface
Kwang-Soup Song, Yusuke Nakamura, Yuichi Sasaki, Munenori Degawa, Jung-Hoon Yang, Hiroshi Kawarada
ANALYTICA CHIMICA ACTA 573 3 - 8 2006.07 [Refereed]
pH-sensitive diamond field-effect transistors (FETs) with directly aminated channel surface
Kwang-Soup Song, Yusuke Nakamura, Yuichi Sasaki, Munenori Degawa, Jung-Hoon Yang, Hiroshi Kawarada
ANALYTICA CHIMICA ACTA 573 ( Sp. Iss ) 3 - 8 2006.07 [Refereed]
Fabrication of T-shaped gate diamond metal-insulator-semiconductor field-effect transistors
Kazuyuki Hirama, Shingo Miyamoto, Hiroki Matsudaira, Hitoshi Umezawa, Hiroshi Kawarada
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 45 ( 7 ) 5681 - 5684 2006.07 [Refereed]
DNA micropatterning on polycrystalline diamond via one-step direct amination
GJ Zhang, KS Song, Y Nakamura, T Ueno, T Funatsu, Ohdomari, I, H Kawarada
LANGMUIR 22 ( 8 ) 3728 - 3734 2006.04 [Refereed]
Characterization of diamond metal-insulator-semiconductor field-effect transistors with aluminum oxide gate insulator
K Hirama, S Miyamoto, H Matsudaira, K Yamada, H Kawarada, T Chikyo, H Koinuma, K Hasegawa, H Umezawa
APPLIED PHYSICS LETTERS 88 ( 11 ) 112117 2006.03 [Refereed]
Electrical properties of diamond MISFETs with submicron-sized gate on boron-doped (111) surface
Takeyasu Saito, Kyung-ho Park, Kazuyuki Hirama, Hitoshi Umezawa, Mitsuya Satoh, Hiroshi Kawarada, Zhi-Quan Liu, Kazutaka Mitsuishi, Hideyo Okushi
PROGRESS IN SEMICONDUCTOR MATERIALS V-NOVEL MATERIALS AND ELECTRONIC AND OPTOELECTRONIC APPLICATIONS 891 485 - + 2006
Superconductivity in CVD Diamond
高野 義彦, 川原田洋
セラミックス 41 ( 1 ) 47 - 49 2006 [Refereed]
Soft X-ray angle-resolved photoemission spectroscopy of heavily boron-doped superconducting diamond films
T. Yokoya, T. Nakamura, T. Matushita, T. Muro, H. Okazaki, M. Arita, K. Shimada, H. Namatame, M. Taniguchi, Y. Takano, M. Nagao, T. Takenouchi, H. Kawarada, T. Oguchi
SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS 7 S12 - S16 2006 [Refereed]
Scanning tunneling microscopy and spectroscopy studies of superconducting boron-doped diamond films
Terukazu Nishizaki, Yoshihiko Takano, Masanori Nagao, Tomohiro Takenouchi, Hiroshi Kawarada, Norio Kobayashi
SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS 7 S22 - S26 2006 [Refereed]
Laser-excited photoemission spectroscopy study of superconducting boron-doped diamond
K. Ishizaka, R. Eguchi, S. Tsuda, T. Kiss, T. Shimojima, T. Yokoya, S. Shin, T. Togashi, S. Watanabe, C. -T. Chen, C. Q. Zhang, Y. Takano, M. Nagao, I. Sakaguchi, T. Takenouchi, H. Kawarada
SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS 7 S17 - S21 2006 [Refereed]
B-11-NMR study in boron-doped diamond films
H. Mukuda, T. Tsuchida, A. Harada, Y. Kitaoka, T. Takenouchi, Y. Takano, M. Nagao, I. Sakaguchi, H. Kawarada
SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS 7 S37 - S40 2006 [Refereed]
Acoustic and optical phonons in metallic diamond
M. Hoesch, T. Fukuda, T. Takenouchi, J. P. Sutter, S. Tsutsui, A. Q. R. Baron, M. Nagao, Y. Takano, H. Kawarada, J. Mizuki
SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS 7 S31 - S36 2006 [Refereed]
Low-temperature growth of vertically aligned single-walled carbon nanotubes by radical CVD
Takayuki Iwasaki, Goufang Zhong, Hiroshi Kawarada
NEW DIAMOND AND FRONTIER CARBON TECHNOLOGY 16 ( 3 ) 177 - 184 2006 [Refereed]
Enhancement of field emission characteristics of tungsten emitters by single-walled carbon nanotube modification
D Ferrer, T Tanii, Matsuya, I, G Zhong, S Okamoto, H Kawarada, T Shinada, Ohdomari, I
APPLIED PHYSICS LETTERS 88 ( 3 ) 33116 2006.01 [Refereed]
Origin of the metallic properties of heavily boron-doped superconducting diamond
T Yokoya, T Nakamura, T Matsushita, T Muro, Y Takano, M Nagao, T Takenouchi, H Kawarada, T Oguchi
NATURE 438 ( 7068 ) 647 - 650 2005.12 [Refereed]
Characterization of locally modified diamond surface using Kelvin probe force microscope
M Tachiki, Y Kaibara, Y Sumikawa, M Shigeno, H Kanazawa, T Banno, KS Song, H Umezawa, H Kawarada
SURFACE SCIENCE 581 ( 2-3 ) 207 - 212 2005.05 [Refereed]
Low temperature synthesis of extremely dense, and vertically aligned single-walled carbon nanotubes
GF Zhong, T Iwasaki, K Honda, Y Furukawa, Ohdomari, I, H Kawarada
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 44 ( 4A ) 1558 - 1561 2005.04 [Refereed]
Very high yield growth of vertically aligned single-walled carbon nanotubes by point-arc microwave plasma CVD
GF Zhong, T Iwasaki, K Honda, Y Furukawa, Ohdomari, I, H Kawarada
CHEMICAL VAPOR DEPOSITION 11 ( 3 ) 127 - 130 2005.03 [Refereed]
Evaluations of electrical properties for ZnTe thin films electrodeposited from a citric acid bath with a Hall effect measurement
T Ohtomo, T Ishizaki, D Ogiwara, H Kawarada, A Fuwa
JOURNAL OF THE JAPAN INSTITUTE OF METALS 69 ( 3 ) 298 - 302 2005.03 [Refereed]
RF diamond transistors: Current status and future prospects
Umezawa H, Hirama K, Arai T, Hata H, Takayanagi H, Koshiba T, Yohara K, Mejima S, Satoh M, Song K. S, Kawarada H
Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers 44 ( 11 ) 7789 - 7794 2005 [Refereed]
Fabrication of diamond MISFET with micron-sized gate length on boron-doped (111) surface
Saito T, Park K. H, Hirama K, Umezawa H, Satoh M, Kawarada H, Okushi H
Diamond and Related Materials 14 ( 11-12 ) 2043 - 2046 2005 [Refereed]
Superconductivity in polycrystalline diamond thin films
Yoshihiko Takano, Masanori Nagao, Tomohiro Takenouchi, Hitoshi Umezawa, Isao Sakaguchi, Masashi Tachiki, Hiroshi Kawarada
DIAMOND AND RELATED MATERIALS 14 1936 - 1938 2005 [Refereed]
Superconductivity in diamond
高野 義彦, 川原田洋
FSST NEWS ( 104 ) 2 - 5 2005 [Refereed]
表面修飾ダイヤモンドトランジスタによるDNA及びバイオセンシング応用
川原田 洋, 宋 光燮
化学と工業 58 ( 4 ) 473 - 476 2005
多結晶ダイヤモンドを用いた電解質溶液FETsのバイオセンサへの応用
宋 光燮, 中村 雄介, 出川 宗里, 佐々木 順紀, 梅沢 仁, 川原田 洋
日本結晶成長学会誌 31 4 2005
Micropatterning oligonucleotides on single-crystal diamond surface by photolithography
GJ Zhang, H Umezawa, H Hata, T Zako, T Funatsu, L Ohdomari, H Kawarada
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 44 ( 8-11 ) L295 - L298 2005 [Refereed]
Characteristics of diamond electrolyte solution-gate FETs (SGFETs) and applications to biosensor
KS Song, H Kawarada
NEW DIAMOND AND FRONTIER CARBON TECHNOLOGY 15 ( 6 ) 325 - 335 2005 [Refereed]
Characteristics of diamond electrolyte solution-gate FETs (SGFETs) and applications to biosensor
KS Song, H Kawarada
NEW DIAMOND AND FRONTIER CARBON TECHNOLOGY 15 ( 6 ) 325 - 335 2005 [Refereed]
Synthesis of highly oriented and dense conical carbon nanofibers by a DC bias-enhanced microwave plasma CVD method
GF Zhong, T Iwasaki, H Kawarada, Ohdomari, I
THIN SOLID FILMS 464 ( 65 ) 315 - 318 2004.10 [Refereed]
Superconductivity in diamond thin films well above liquid helium temperature
Y Takano, M Nagao, Sakaguchi, I, M Tachiki, T Hatano, K Kobayashi, H Umezawa, H Kawarada
APPLIED PHYSICS LETTERS 85 ( 14 ) 2851 - 2853 2004.10 [Refereed]
Over 20-GHz cutoff frequency submicrometer-gate diamond MISFETs
H Matsudaira, S Miyamoto, H Ishizaka, H Umezawa, H Kawarada
IEEE ELECTRON DEVICE LETTERS 25 ( 7 ) 480 - 482 2004.07 [Refereed]
Memory effect of diamond in-plane-gated field-effect transistors
Y Sumikawa, T Banno, K Kobayashi, Y Itoh, H Umezawa, H Kawarada
APPLIED PHYSICS LETTERS 85 ( 1 ) 139 - 141 2004.07 [Refereed]
Large-area synthesis of carbon nanofibers by low-power microwave plasma-assisted CVD
GF Zhong, M Tachiki, H Umezawa, T Fujisaki, H Kawarada, Ohdomari, I
CHEMICAL VAPOR DEPOSITION 10 ( 3 ) 125 - + 2004.06 [Refereed]
Surface-modified diamond field-effect transistors for enzyme-immobilized biosensors
KS Song, M Degawa, Y Nakamura, H Kanazawa, H Umezawa, H Kawarada
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 43 ( 6B ) L814 - L817 2004.06 [Refereed]
多結晶ダイヤモンド表面を用いた電解質溶液FETsのバイオセンサへの応用
宋 光燮, 中村 雄介, 出川 宗則, 佐々木 順紀, 梅沢 仁, 川原田 洋
日本結晶成長学会論文誌 31 ( 4 ) 335 - 340 2004
ダイヤモンドにおけるキャリア輸送特性とFETへの応用
川原田 洋, 梅沢 仁
応用物理 73 ( 3 ) 339 - 345 2004
Diamond field effect transistors using H-terminated surfaces
H Kawarada
THIN-FILM DIAMOND II 77 311 - 338 2004 [Refereed]
Cl- sensitive biosensor used electrolyte-solution-gate diamond FETs
KS Song, T Sakai, H Kanazawa, Y Araki, H Umezawa, M Tachiki, H Kawarada
BIOSENSORS & BIOELECTRONICS 19 ( 2 ) 137 - 140 2003.11 [Refereed]
RF performance of diamond surface-channel field-effect transistors
H Umezawa, S Miyamoto, H Matsudaira, H Ishizaka, KS Song, M Tachiki, H Kawarada
IEICE TRANSACTIONS ON ELECTRONICS E86C ( 10 ) 1949 - 1954 2003.10 [Refereed]
Ozone-treated channel diamond field-effect transistors
T Sakai, KS Song, H Kanazawa, Y Nakamura, H Umezawa, M Tachiki, H Kawarada
DIAMOND AND RELATED MATERIALS 12 ( 10-11 ) 1971 - 1975 2003.10 [Refereed]
Non-linear increases in excitonic emission in synthetic type-IIa diamond
K Nakazawa, H Umezawa, M Tachiki, H Kawarada
DIAMOND AND RELATED MATERIALS 12 ( 10-11 ) 1995 - 1998 2003.10 [Refereed]
Deep sub-micron gate diamond MISFETs
H Matsudaira, A Takuya, H Umezawa, S Miyamoto, H Ishizaka, M Tachiki, H Kawarada
DIAMOND AND RELATED MATERIALS 12 ( 10-11 ) 1814 - 1818 2003.10 [Refereed]
Cryogenic operation of surface-channel diamond field-effect transistors
H Ishizaka, M Tachiki, KS Song, H Umezawa, H Kawarada
DIAMOND AND RELATED MATERIALS 12 ( 10-11 ) 1800 - 1803 2003.10 [Refereed]
Diamond nanofabrication and characterization for biosensing application
M Tachiki, Y Kaibara, Y Sumikawa, M Shigeno, T Banno, KS Song, H Umezawa, H Kawarada
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 199 ( 1 ) 39 - 43 2003.09 [Refereed]
Electron-spectroscopy and -diffraction study of the conductivity of CVD diamond (001)2 x 1 surface
S Kono, T Takano, M Shimomura, T Goto, K Sato, T Abukawa, M Tachiki, H Kawarada
SURFACE SCIENCE 529 ( 1-2 ) 180 - 188 2003.04 [Refereed]
水素終端表面伝導層を用いた高周波ダイヤモンドFET
梅沢 仁, 石坂 博明, 宮本 真吾, 宋 光燮, 立木 実, 川原田 洋
電子情報通信学会論文誌C J86-C 2003.04
Electron-spectroscopy and -diffraction study of the conductivity of CVD diamond (001)2 x 1 surface
S Kono, T Takano, M Shimomura, T Goto, K Sato, T Abukawa, M Tachiki, H Kawarada
SURFACE SCIENCE 529 ( 1-2 ) 180 - 188 2003.04 [Refereed]
Initial growth of heteroepitaxial diamond on Ir(001)/MgO(001) substrates using antenna-edge-type microwave plasma assisted chemical vapor deposition
T Fujisaki, M Tachiki, N Taniyama, M Kudo, H Kawarada
DIAMOND AND RELATED MATERIALS 12 ( 3-7 ) 246 - 250 2003.03 [Refereed]
High performance diamond MISFETs using CaF2 gate insulator
S Miyamoto, H Matsudaira, H Ishizaka, K Nakazawa, H Taniuchi, H Umezawa, M Tachiki, H Kawarada
DIAMOND AND RELATED MATERIALS 12 ( 3-7 ) 399 - 402 2003.03 [Refereed]
Fabrication of diamond in-plane-gated field effect transistors using oxygen plasma etching
T Banno, M Tachiki, K Nakazawa, Y Sumikawa, H Umezawa, H Kawarada
DIAMOND AND RELATED MATERIALS 12 ( 3-7 ) 408 - 412 2003.03 [Refereed]
Effect of iodide ions on the hydrogen-terminated and partially oxygen-terminated diamond surface
H Kanazawa, KS Song, T Sakai, Y Nakamura, H Umezawa, M Tachiki, H Kawarada
DIAMOND AND RELATED MATERIALS 12 ( 3-7 ) 618 - 622 2003.03 [Refereed]
Control wettability of the hydrogen-terminated diamond surface and the oxidized diamond surface using an atomic force microscope
Y Kaibara, K Sugata, M Tachiki, H Umezawa, H Kawarada
DIAMOND AND RELATED MATERIALS 12 ( 3-7 ) 560 - 564 2003.03 [Refereed]
Cathodoluminescence and Hall-effect measurements in sulfur-doped chemical-vapor-deposited diamond
K Nakazawa, M Tachiki, H Kawarada, A Kawamura, K Horiuchi, T Ishikura
APPLIED PHYSICS LETTERS 82 ( 13 ) 2074 - 2076 2003.03 [Refereed]
Electron spectroscopy and diffraction study of the origin of CVD diamond surface conductivity
S Kono, T Takano, M Shimomura, T Goto, K Sato, T Abukawa, M Tachiki, H Kawarada
NEW DIAMOND AND FRONTIER CARBON TECHNOLOGY 13 ( 5 ) 247 - 255 2003 [Refereed]
水素終端表面伝導層を用いた高周波ダイヤモンドFET
梅沢 仁, 石坂 博明, 宮本 真吾, 宋 光燮, 立木 実, 川原田 洋
電子情報通信学会論文誌C J86-C 419 - 425 2003
Fabrication of single-hole transistors on hydrogenated diamond surface using atomic force microscope
M Tachiki, H Seo, T Banno, Y Sumikawa, H Umezawa, H Kawarada
APPLIED PHYSICS LETTERS 81 ( 15 ) 2854 - 2856 2002.10 [Refereed]
Nanoscale modification of the hydrogen-terminated diamond surface using atomic force microscope
K Sugata, M Tachiki, T Fukuda, H Seo, H Kawarada
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 41 ( 7B ) 4983 - 4986 2002.07 [Refereed]
Investigation of current-voltage characteristics of oxide region induced by atomic force microscope on hydrogen-terminated diamond surface
H Seo, M Tachiki, T Banno, Y Sumikawa, H Umezawa, H Kawarada
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 41 ( 7B ) 4980 - 4982 2002.07 [Refereed]
Microwave performance of diamond field-effect transistors
H Taniuchi, H Umezawa, H Ishizaka, H Kawarada
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 41 ( 4B ) 2591 - 2594 2002.04 [Refereed]
Heteroepitaxial diamond thin film growth on Ir(001)/MgO(001) substrate by antenna-edge plasma assisted chemical vapor deposition
M Tachiki, T Fujisaki, N Taniyama, M Kudo, H Kawarada
JOURNAL OF CRYSTAL GROWTH 237 1277 - 1280 2002.04 [Refereed]
RF performance of high transconductance and high-channel-mobility surface-channel polycrystalline diamond metal-insulator-semiconductor field-effect transistors
H Umezawa, T Arima, N Fujihara, H Taniuchi, H Ishizaka, M Tachiki, C Wild, P Koidl, H Kawarada
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 41 ( 4B ) 2611 - 2614 2002.04 [Refereed]
High frequency performance of diamond field-effect transistor
Jpn.J.Appl.Phys. 41 2591 - 2594 2002.04
Effect of Cl- ionic solutions on electrolyte-solution-gate diamond field-effect transistors
T Sakai, Y Araki, H Kanazawa, H Umezawa, M Tachiki, H Kawarada
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 41 ( 4B ) 2595 - 2597 2002.04 [Refereed]
RF performance of diamond MISFETs
H Umezawa, H Taniuchi, H Ishizaka, T Arima, N Fujihara, M Tachiki, H Kawarada
IEEE ELECTRON DEVICE LETTERS 23 ( 3 ) 121 - 123 2002.03 [Refereed]
Fabrication of heteroepitaxial diamond thin films on Ir(001)/MgO(001) substrates using antenna-edge-type microwave plasma-assisted chemical vapor deposition
T Fujisaki, M Tachiki, N Taniyama, M Kudo, H Kawarada
DIAMOND AND RELATED MATERIALS 11 ( 3-6 ) 478 - 481 2002.03 [Refereed]
Fabrication of diamond single-hole transistors using AFM anodization process
T Banno, M Tachiki, H Seo, H Umezawa, H Kawarada
DIAMOND AND RELATED MATERIALS 11 ( 3-6 ) 387 - 391 2002.03 [Refereed]
DC and RF characteristics of 0.7-mu m-gate-length diamond metal-insulator-semiconductor field effect transistor
H Ishizaka, H Umezawa, H Taniuchi, T Arima, N Fujihara, M Tachiki, H Kawarada
DIAMOND AND RELATED MATERIALS 11 ( 3-6 ) 378 - 381 2002.03 [Refereed]
ダイヤモンド表面のエレクトロニクス・バイオ応用
表面科学 23 ( -7 ) 411 - 416 2002
Low-temperature operation of diamond surface-channel field-effect transistors
M Tachiki, H Ishizaka, T Banno, T Sakai, KS Song, H Umezawa, H Kawarada
DEFECT AND IMPURITY ENGINEERED SEMICONDUCTORS AND DEVICES III 719 139 - 143 2002 [Refereed]
Heteroepitaxial diamond thin film growth on Ir(001)/MgO(001) substrate by antenna-edge plasma assisted chemical vapor deposition (St. Elmo CVD)
M Tachiki, T Fujisaki, N Taniyama, M Kudo, H Kawarada
NEW DIAMOND AND FRONTIER CARBON TECHNOLOGY 12 ( 6 ) 333 - 341 2002 [Refereed]
Heteroepitaxial diamond thin film growth on Ir(001)/MgO(001) substrate by antenna-edge plasma assisted chemical vapor deposition (St. Elmo CVD)
M Tachiki, T Fujisaki, N Taniyama, M Kudo, H Kawarada
NEW DIAMOND AND FRONTIER CARBON TECHNOLOGY 12 ( 6 ) 333 - 341 2002 [Refereed]
HIgh Performance Diamond Field-Effect Transistors on Hydrogen-Terminated Surface-Channel
H. Umezawa, H. Taniuchi, T. Arima, H. Ishizaka, N. Fujihara, Y. Ohba, M. Tachiki, H. Kawarada
IEEJ C-122 10 - 16 2002
Excitonic recombination radiation in phosphorus-doped CVD diamonds
K Nakazawa, K Tanabe, M Tachiki, H Kawarada, S Koizumi
PHYSICAL REVIEW B 64 ( 23 ) 235203 2001.12 [Refereed]
Nanodevice Fabrication on Hydrogenated Diamond Surface using Atomic Force Microscope
Mat.Res.Soc.Sympo.Proc/Materials Research Society 2001.09
Fabrication of Sub-0.1 µm Channel Diamond MISFET
H. Umezawa, H. Kawarada
Mat.Res.Soc.Sympo.Proc/Materials Research Society 2001.09
High-frequency performance of diamond field-effect transistor
H Taniuchi, H Umezawa, T Arima, M Tachiki, H Kawarada
IEEE ELECTRON DEVICE LETTERS 22 ( 8 ) 390 - 392 2001.08 [Refereed]
Potential Applications of Surface Channel Diamond Field Effect Transistors
H. Umezawa, H. Taniuchi, T. Arima, M. Tachiki, H. Kawarada
Diamond Relat. Mater/Elsevier 10 2001.08
High-Frequency Applications of diamond MESFETs
H. Taniuchi, H. Umezawa, T. Arima, M. Tachiki, H. Kawarada
IEEE Electron Device Lett./IEEE EDL-22 ( 8 ) 2001.08
Diamond deposition on a large-area substrate by plasma-assisted chemical vapor deposition using an antenna-type coaxial microwave plasma generator
N Taniyama, M Kudo, O Matsumoto, H Kawarada
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS 40 ( 7A ) L698 - L700 2001.07 [Refereed]
表面伝導層を用いたダイヤモンド電子デバイス
川原田 洋, 立木 実, 梅沢 仁
応用物理/応用物理学会 70 ( 5 ) 536 - 541 2001.05
Electrolyte-solution-gate FETs using diamond surface for biocompatible ion sensors
H Kawarada, Y Araki, T Sakai, T Ogawa, H Umezawa
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 185 ( 1 ) 79 - 83 2001.05 [Refereed]
Characterization of diamond surface-channel metal-semiconductor field-effect transistor with device simulation
K Tsugawa, H Umezawa, H Kawarada
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 40 ( 5A ) 3101 - 3107 2001.05 [Refereed]
ダイヤモンド・ナノテクノロジー
川原田洋
NTTサイエンスフォーラム 第12回 2001.04
ダイヤモンドナノ加工技術
マテリアルインテグレーション 14 47-51 2001
High frequency application of high transconductance surface-channel diamond field-effect transistors
H Umezawa, H Taniuchi, T Arima, H Ishizaka, N Fujihara, Yoshikazu, Ohba, M Tachiki, H Kawarada
ISPSD'01: PROCEEDINGS OF THE 13TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS 195 - 198 2001 [Refereed]
High-performance surface-channel diamond field-effect transistors
H Umezawa, H Taniuchi, T Arima, M Tachiki, H Okushi, H Kawarada
SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000 353-356 815 - 818 2001 [Refereed]
Cu/CaF2/diamond metal-insulator-semiconductor field-effect transistor utilizing self-aligned gate fabrication process
H Umezawa, H Taniuchi, T Arima, M Tachiki, K Tsugawa, S Yamanaka, D Takeuchi, H Okushi, H Kawarada
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS 39 ( 9AB ) L908 - L910 2000.09 [Refereed]
Surface order evaluation of the heteroepitaxial diamond film grown on an inclined beta-SiC(001)
S Kono, T Goto, T Abukawa, C Wild, P Koidl, H Kawarada
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 39 ( 7B ) 4372 - 4373 2000.07 [Refereed]
Nanofabrication on hydrogen-terminated diamond surfaces by atomic force microscope probe-induced oxidation
M Tachiki, T Fukuda, K Sugata, H Seo, H Umezawa, H Kawarada
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 39 ( 7B ) 4631 - 4632 2000.07 [Refereed]
Control of adsorbates and conduction on CVD-grown diamond surface, using scanning probe microscope
M Tachiki, T Fukuda, K Sugata, H Seo, H Umezawa, H Kawarada
APPLIED SURFACE SCIENCE 159 578 - 582 2000.06 [Refereed]
Surface Channel Diamond Field Effect Transistors and Their Applications(invited paper)
Proc 1st Int. Workshop on Ultra-Low-Loss Pow. Dev. Tech. 112 - 115 2000.05
The reduction of parasitic resistance by improving the diamond FET fabrication process
T Arima, H Taniuchi, H Umezawa, M Tachiki, K Tsugawa, S Yamanaka, D Takeuchi, H Okushi, H Kawarada
NEW DIAMOND AND FRONTIER CARBON TECHNOLOGY 10 ( 1 ) 56 - 56 2000 [Refereed]
Oxygen plasma etching of polycrystalline diamond
K Tanabe, H Umezawa, M Tachiki, H Kawarada
NEW DIAMOND AND FRONTIER CARBON TECHNOLOGY 10 ( 1 ) 54 - 54 2000 [Refereed]
Nanofabrication on the surface of the hydrogen-terminated diamond with the scanning probe microscope and I-V characteristics of the surface conductive layer
K Sugata, M Tachiki, H Umezawa, T Fukuda, H Seo, T Arima, H Taniuchi, H Kawarada
NEW DIAMOND AND FRONTIER CARBON TECHNOLOGY 10 ( 1 ) 44 - 44 2000 [Refereed]
High-performance surface-channel diamond field-effect transistors
H. Umezawa, H. Taniuchi, T. Arima, M. Tachiki, H. Okushi, H. Kawarada
SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000 MATERIALS SCIENCE FORUM 353 ( 3 ) 815 - 818 2000
High-Performance Surface-Channel Diamond Field-Effect Transistors
Proc.Silicon Carbide and Related Materials,ECSCRM2000 Mater.Sci.Forum 353-356 815 - 818 2000
Diamond ISFET in alkaline solution
T Ogawa, Y Araki, M Tachiki, H Kawarada
NEW DIAMOND AND FRONTIER CARBON TECHNOLOGY 10 ( 1 ) 58 - 58 2000 [Refereed]
Device simulations of diamond surface-channel FETs with quantum transport model
Y Ohba, S Sen, K Tsugawa, H Taniuchi, H Kawarada
NEW DIAMOND AND FRONTIER CARBON TECHNOLOGY 10 ( 1 ) 57 - 57 2000 [Refereed]
Cu/CaF2/diamond MISFET utilizing self-aligned gate process
H Taniuchi, T Arima, H Umezawa, M Tachiki, K Tugawa, S Yamanaka, D Takeuchi, H Okushi, H Kawarada
NEW DIAMOND AND FRONTIER CARBON TECHNOLOGY 10 ( 1 ) 55 - 55 2000 [Refereed]
Control of diamond surface properties by AFM
H Seo, M Tachiki, T Fukuda, K Sugata, H Kawarada
NEW DIAMOND AND FRONTIER CARBON TECHNOLOGY 10 ( 1 ) 43 - 43 2000 [Refereed]
Cluster calculations of diamond-SiC and -Si interface structures
K Morita, K Hine, K Tsugawa, H Kawarada
NEW DIAMOND AND FRONTIER CARBON TECHNOLOGY 10 ( 1 ) 31 - 31 2000 [Refereed]
High-performance diamond metal-semiconductor field-effect transistor with 1 mu m gate length
H Umezawa, K Tsugawa, S Yamanaka, D Takeuchi, H Okushi, H Kawarda
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS 38 ( 11A ) L1222 - L1224 1999.11 [Refereed]
High Performance Diamond Field Effect Transistors Using Hydrogen-Terminated Surfaces for Electron Device and Sensor Applications
Proc ADC/FCT'99/NEDO,JFCC 134 - 137 1999.09
High-Performance Diamond Surface-Channel Field-Effect Transistors and Their Operation Mechanism
K. Tsugawa, K. Kitatani, H. Noda, A. Hokazono, K. Hirose, M. Tajima, H. Kawarada
Diamond and Related Materials/Elsevie 8 927 - 933 1999.07
Fabrication of 1 mu m gate diamond FET using self-aligned gate process
H Umezawa, K Kitatani, K Kinumura, N Seto, K Tsugawa, H Kawarada
NEW DIAMOND AND FRONTIER CARBON TECHNOLOGY 9 ( 2 ) 151 - 153 1999 [Refereed]
Device simulations of diamond surface-channel MESFETs
K Tsugawa, H Kawarada
NEW DIAMOND AND FRONTIER CARBON TECHNOLOGY 9 ( 2 ) 154 - 155 1999 [Refereed]
Cluster calculations of diamond-SiC interface structures
K Morita, K Tsugawa, Y Yamamoto, H Kawarada
NEW DIAMOND AND FRONTIER CARBON TECHNOLOGY 9 ( 2 ) 157 - 157 1999 [Refereed]
Cathodoluminescence of phosphorus-doped {111} homoepitaxial diamond thin films
A Sato, K Tanabe, S Egawa, T Tsubota, S Morooka, J Hojyo, H Maeda, H Kawarada
NEW DIAMOND AND FRONTIER CARBON TECHNOLOGY 9 ( 2 ) 123 - 125 1999 [Refereed]
Surface p-channel metal-oxide-semiconductor field effect transistors fabricated on hydrogen terminated (001) surfaces of diamond
A. Hokazono, K. Tsugawa, H. Umezana, K. Kitatani, H. Kawarada
Solid-State Electronics 43 ( 8 ) 1465 - 1471 1999
MOSFETs on polished surfaces of polycrystalline diamond
K. Kitatani, H. Umezawa, K. Tsugawa, K. Ueyama, T. Ishikura, S. Yamashita, H. Kawarada
Diamond and Related Materials 8 ( 10 ) 1831 - 1833 1999
Cathodoluminescence of phosphorus-doped {111} homoepitaxial diamond thin films
A Sato, K Tanabe, S Egawa, T Tsubota, S Morooka, J Hojyo, H Maeda, H Kawarada
NEW DIAMOND AND FRONTIER CARBON TECHNOLOGY 9 ( 2 ) 123 - 125 1999 [Refereed]
Application and device modeling of diamond FET using surface semiconductive layers
K Tsugawa, H Noda, A Hokazono, K Kitatani, K Morita, H Kawarada
ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS 81 ( 7 ) 19 - 27 1998.07 [Refereed]
Application and device modeling of diamond FET using surface semiconductive layers
K Tsugawa, H Noda, A Hokazono, K Kitatani, K Morita, H Kawarada
ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS 81 ( 7 ) 19 - 27 1998.07 [Refereed]
Surface morphology and surface p-channel field effect transistor on the heteroepitaxial diamond deposited on inclined beta-SiC(001) surfaces
H Kawarada, C Wild, N Herres, P Koidl, Y Mizuochi, A Hokazono, H Nagasawa
APPLIED PHYSICS LETTERS 72 ( 15 ) 1878 - 1880 1998.04 [Refereed]
p型半導体ダイヤモンドとその応用
ニューセラミックス&エレクトロニクセラミクス/ティー・アイ・シー 11 ( 3 ) 1998.03
ダイヤモンド電界効果トランジスタの現状と将来
川原田洋
応用物理(総合報告)/応用物理学会 67 ( 2 ) 128 - 138 1998.02
Metal-semiconductor field-effect transistors on hydrogen-terminated diamond surfaces
K Tsugawa, K Kitatani, H Kawarada
DIAMOND FILMS AND TECHNOLOGY 8 ( 4 ) 289 - 297 1998 [Refereed]
ダイヤモンド表面チャネル型FET -その動作機構と応用-
電子情報通信学会論文誌/電子情報通信学会 J81 ( C-II ) 172 - 179 1998.01
MESFETs and MOSFETs on hydrogen-terminated diamond surfaces
K Tsugawa, A Hokazono, H Noda, K Kitatani, K Morita, H Kawarada
SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2 264-2 977 - 980 1998 [Refereed]
Metal-semiconductor field-effect transistors on hydrogen-terminated diamond surfaces
K Tsugawa, K Kitatani, H Kawarada
DIAMOND FILMS AND TECHNOLOGY 8 ( 4 ) 289 - 297 1998 [Refereed]
Enhancement/depletion surface channel field effect transistors of diamond and their logic circuits
A Hokazono, H Kawarada
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 36 ( 12A ) 7133 - 7139 1997.12 [Refereed]
Comparative Study of Excitonic Recombination Radiation From Diamonds Grown by CVD and HP/HT Methods
T. Murakami, K. Nakamura, S. Yamashita, S. Takeuchi, M. Murakawa, H.Kawarada
Diam. Rel. Mat./Elsevier 6 1668 - 1673 1997.05
Heteroepitaxial growth of highly oriented diamond on cubic silicon carbide
H Kawarada, C Wild, N Herres, R Locher, P Koidl, H Nagasawa
JOURNAL OF APPLIED PHYSICS 81 ( 8 ) 3490 - 3493 1997.04 [Refereed]
Device modeling of high performance diamond MESFETs using p-type surface semiconductive layers
H Noda, A Hokazono, H Kawarada
DIAMOND AND RELATED MATERIALS 6 ( 5-7 ) 865 - 868 1997.04 [Refereed]
Heteroepitaxial growth of highly oriented diamond on cubic silicon carbide
H Kawarada, C Wild, N Herres, R Locher, P Koidl, H Nagasawa
JOURNAL OF APPLIED PHYSICS 81 ( 8 ) 3490 - 3493 1997.04 [Refereed]
Surface characterization of smooth heteroepitaxial diamond layers on beta-SiC (001)
Y Mizuochi, H Nagasawa, H Kawarada
DIAMOND AND RELATED MATERIALS 6 ( 2-4 ) 277 - 281 1997.03 [Refereed]
Enhancement/depletion MESFETs of diamond and their logic circuits
A Hokazono, T Ishikura, K Nakamura, S Yamashita, H Kawarada
DIAMOND AND RELATED MATERIALS 6 ( 2-4 ) 339 - 343 1997.03 [Refereed]
Surface properties of hydrogen-terminated diamonds and their applications to electron devices.
H Kawarada
PHYSICS OF DIAMOND 135 505 - 535 1997 [Refereed]
ダイヤモンドヘテロエピタキシャル成長の現状
フロンティア・カーボン・テクノロジー・シンポジウム/NEDO 1996.10
Electron affinity and surface re-ordering of homoepitaxial diamond (100)
KW Wong, ST Lee, RWM Kwok, YW Lam, H Kawarada
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 35 ( 10 ) 5444 - 5447 1996.10 [Refereed]
Electrically isolated metal-semiconductor field effect transistors and logic circuits on homoepitaxial diamonds
H Kawarada, M Itoh, A Hokazono
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 35 ( 9B ) L1165 - L1168 1996.09 [Refereed]
Scanning tunneling microscopy and spectroscopy for studying hydrogen-terminated homoepitaxial diamond surfaces
A Sato, S Yamashita, H Kawarada
SILICON CARBIDE AND RELATED MATERIALS 1995 142 1099 - 1102 1996 [Refereed]
Observation of dominant free exciton recombination from synthesized diamond by cathodoluminescence measurement
J Imamura, T Tsutsumi, T Murakami, H Kawarada, S Takeuchi, M Murakawa
SILICON CARBIDE AND RELATED MATERIALS 1995 142 1087 - 1090 1996 [Refereed]
Fabrication of logic circuits using diamond metal-semiconductor field-effect transistor
M Itoh, A Hokazono, H Noda, H Kawarada
SILICON CARBIDE AND RELATED MATERIALS 1995 142 1095 - 1098 1996 [Refereed]
Device modeling of enhancement-mode diamond MESFET utilizing p-type surface semiconductive layers
N Jin, H Sakai, K Tsugawa, H Kawarada
SILICON CARBIDE AND RELATED MATERIALS 1995 142 1091 - 1094 1996 [Refereed]
Hydrogen-terminated diamond surfaces and interfaces
H Kawarada
SURFACE SCIENCE REPORTS 26 ( 7 ) 205 - 259 1996 [Refereed]
β-SiC(001)基板上のダイヤモンドヘテロエピタキシャル成長
SiCおよび関連ワイドギャップ半導体研究会/応用物理学会 1995.12
ダイヤモンドMESFETを用いた集積回路作製のための基礎技術とフリップフロップICメモリーの作製
SiCおよび関連ワイドギャップ半導体研究会/応用物理学会 1995.12
表面伝導層ダイヤモンドMESFETを用いたフリップフロップICメモリーの作製
第9回ダイヤモンドシンポジウム 1995.11
素子分離されたデプレッションモードダイヤモンドMESFETの作製と評価II
第9回ダイヤモンドシンポジウム 1995.11
β-SiCをバッファ層としたSi(001)基板上でのダイヤモンドヘテロエピタキシャル成長
日本結晶成長学会誌/アグネ 22 ( 4 ) 1995.10
SCANNING-TUNNELING-MICROSCOPE OBSERVATION OF THE HOMOEPITAXIAL DIAMOND(001) 2X1 RECONSTRUCTION OBSERVED UNDER ATMOSPHERIC-PRESSURE
H KAWARADA, H SASAKI, A SATO
PHYSICAL REVIEW B 52 ( 15 ) 11351 - 11358 1995.10 [Refereed]
INITIAL GROWTH OF HETEROEPITAXIAL DIAMOND ON SI(001) SUBSTRATES VIA BETA-SIC BUFFER LAYER
T SUESADA, N NAKAMURA, H NAGASAWA, H KAWARADA
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 34 ( 9A ) 4898 - 4904 1995.09 [Refereed]
FABRICATION AND CHARACTERIZATION OF METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR UTILIZING DIAMOND SURFACE-CONDUCTIVE LAYER
M ITOH, H KAWARADA
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 34 ( 9A ) 4677 - 4681 1995.09 [Refereed]
HETEROEPITAXIAL GROWTH OF TUNGSTEN CARBIDE FILMS ON W(110) BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION
M KATOH, H KAWARADA
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 34 ( 7A ) 3628 - 3630 1995.07 [Refereed]
Si基板上でのダイヤモンドヘテロエピタキシャル膜の作製
NEW DIAMOND/Japan New Diamond Forum 1995.04
SUZUKI Jun-ichi, KAWARADA Hiroshi, HIRAKI Akio
Jitsumu Hyomen Gijutsu 42 ( 12 ) 1189 - 1195 1991
Effectofaradicalexposurenitridationsurfaceonthechargestabilityofshallownitrogen-vacancycentersindiamond
T.Kageura, K.Kato, H.Yamano, E.Suaebah, M.Kajiya, S.Kawai, M.Inaba, T.Tanii, M.Haruyama, K.Yamada, S.Onoda, W.Kada, O.Hanaizumi, T.Teraji, J.Isoya, S.Kono, H.Kawarada
Phys.Express10(2017)055503
Selective Growth of Carbon Nanostructures on Nickel Implanted Nanopyramid Array, Appl. Surf. Sci. 234, 2004, 72.
D.Ferrer, T.Shinada, T.Tanii, J.Kurosawa, G.Zhong, Y.Kubo, S.Okamoto, H.Kawarada, I.Ohdomari
Label-free DNA sensors using diamond FETs
K. S. Song, G. J. Zhang, Y. Nakamura, K. Furukawa, T. Hiraki, J. H. Yang, I.Ohdomari, H. Kawarada
Phys. Rev. E 74 ( 4 ) 41919
Growth of Dense Single-walled Carbon Nanotubes in Nano-sized Silicon Dioxide Holes for Future Microelectronics
T. Iwasaki, R. Morikane, T. Edura, M. Tokuda, K. Tsutsui, Y. Wada, H. Kawarada
Carbon submitted
Characterization of immobilized DNA on functionalized ultradispersed diamond
J. H. Yang, Y. Nakano, Y. Murakami, K. S. Song, H. Kawarada
Chem. Phys.Lett. submitted
Characterization of hybridization kinetics on functionalized diamond SGFETs for detecting single-mismatch oligonucleotides
J. H. Yang, K. S. Song, Y. Sasaki, M. Degawa, K. Furukawa, T. Hiraki, H. Kawarada
advanced functional materials submitted
Power Electronics Device Applications of Diamond Semiconductors
Satoshi Koizumi, Hitoshi Umezawa, Julien Pernot, Mariko Suzuki( Part: Joint author)
Woodhead Publishing 2018.06 ISBN: 9780081021835
ポストシリコン半導体 -ナノ成膜ダイナミクスと基板・界面効果-
財満 鎭明, 川原田 洋 ほか
株式会社 エヌ・ティー・エス 2013.06 ISBN: 9784864690591
ダイヤモンドエレクトロニクスの最前線
久我 翔馬, 梁 正勲, 川原田 洋
シーエムシー出版 2008 ISBN: 9784781300498
マイクロアレイ・バイオチップの最新技術
川原田 洋
シーエムシー出版 2008 ISBN: 9784882319863
Low-Pressure Synthetic Diamond
Bernhard Dischler, Christoph Wil
Springer-Verlag 1998.08
Communication Distance Evaluation and Development of Seawater Wireless Communication utilizing Solution Gate FET as a Receiver
寳田晃翠, 蓼沼佳斗, 井山裕太郎, CHANG Yu Hao, 新谷幸弘, 川原田洋, 川原田洋
応用物理学会春季学術講演会講演予稿集(CD-ROM) 67th 2020
Development of Quantum Sensor Using Wide Bandgap Semiconductor
小野田忍, 大島武, 磯谷順一, 寺地徳之, 川原田洋, 谷井孝至, 加田渉, 波多野睦子, 波多野睦子
電気学会研究会資料 ( EDD-20-036-044 ) 2020
Creation of NV Center by C5N5H5 Ion Implantation
木村晃介, 木村晃介, 樋口泰成, 樋口泰成, 小野田忍, 加田渉, 薗田隆弘, 川原田洋, 渡邊幸志, 磯谷順一, 花泉修, 大島武
応用物理学会春季学術講演会講演予稿集(CD-ROM) 67th 2020
Self-align fabrication of nano-reservoirs with NV centers in diamond for high-resolution nano-NMR
齋藤悠太, 石井邑, 川勝一斗, 永岡希朗, 畑雄貴, 中村洸介, 榎田尊昭, XU H., 薗田隆弘, 立石哲也, 金久京太郎, 寺地徳之, 小野田忍, 樋口泰成, 樋口泰成, 山田圭介, 大島武, 品田高宏, 川原田洋, 加田渉, 花泉修, 磯谷順一, 谷井孝至
応用物理学会春季学術講演会講演予稿集(CD-ROM) 67th 2020
Improvement of nitrogen-enriched implantation for creation of multi-qubits composed of NV centers
木村晃介, 木村晃介, 小野田忍, 山田圭介, 加田渉, 川原田洋, 渡邊幸志, 磯谷順一, 花泉修, 大島武
応用物理学会秋季学術講演会講演予稿集(CD-ROM) 81st 2020
New Macroscopic All Solid Glassless pH Sensor Utilizing Vessel Gate and Diamond Solution Gate FET
川口柊斗, 井山裕太郎, CHANG Y. H., 蓼沼佳斗, 新谷幸弘, 田尾祐一, 森一高, 川原田洋, 川原田洋
応用物理学会春季学術講演会講演予稿集(CD-ROM) 67th 2020
ダイヤモンド電解質溶液ゲートFETを受信器とした海中無線通信の距離と深さ依存性
寳田晃翠, 蓼沼佳斗, 井山裕太郎, CHANG Yu Hao, 新谷幸弘, 川原田洋, 川原田洋
応用物理学会秋季学術講演会講演予稿集(CD-ROM) 80th ROMBUNNO.20a‐E312‐7 2019.09
ダイヤモンド電解質溶液ゲートFETを用いたVessel GateによるpH Sensing
川口柊斗, 井山裕太郎, CHANG Y. H, 蓼沼佳斗, 新谷幸弘, 川原田洋, 川原田洋
応用物理学会秋季学術講演会講演予稿集(CD-ROM) 80th ROMBUNNO.20a‐E312‐8 2019.09
ダイヤモンド電解質溶液ゲートFETを受信器とした海水内での信号伝送
蓼沼佳斗, 井山裕太郎, 梶家美貴, 河下敦紀, FALINA S, CHANG Y. H, 新谷幸弘, 川原田洋, 川原田洋
応用物理学会春季学術講演会講演予稿集(CD-ROM) 66th ROMBUNNO.11a‐M113‐11 2019.02
浅い単一NVセンターの規則配列を用いたナノNMRのスピンノイズ解析
石井邑, 福田諒介, BALASUBRAMANIAN Priyadharshini, 東又格, 永岡希朗, 河合空, 薗田隆弘, 寺地徳之, 小野田忍, 春山盛善, 春山盛善, 山田圭介, 稲葉優文, 稲葉優文, 山野颯, STUERNER Felix M, SCHMITT Simon, MCGUINNESS Liam P, JELEZKO Fedor, 大島武, 品田高宏, 川原田洋, 加田渉, 花泉修, 磯谷順一, 谷井孝至
応用物理学会秋季学術講演会講演予稿集(CD-ROM) 79th ROMBUNNO.20a‐PB9‐12 2018.09
ダイヤモンド電解質溶液ゲートFETのスイッチング特性およびその参照電極‐チャネル間距離依存性
蓼沼佳斗, 井山裕太郎, 梶家美貴, FALINA S, SYAMSUL M, CHANG Y. H, 新谷幸弘, 川原田洋, 川原田洋
応用物理学会秋季学術講演会講演予稿集(CD-ROM) 79th ROMBUNNO.21p‐232‐13 2018.09
高耐圧及び微細化に向けて構造改善を行った縦型2DHGダイヤモンドMOSFET
岩瀧雅幸, 大井信敬, 牟田翼, 堀川清貴, 天野勝太郎, 日出幸昌邦, 蔭浦泰資, 稲葉優文, 平岩篤, 川原田洋, 川原田洋
応用物理学会春季学術講演会講演予稿集(CD-ROM) 65th ROMBUNNO.18p‐F206‐7 2018.03
水素終端ダイヤモンド表面上のSiO2薄膜が二次元正孔ガスに及ぼす影響
矢部太一, 工藤拓也, 大井信敬, 大久保智, 堀川清貴, 天野勝太郎, 日出幸昌邦, 露崎活人, 蔭浦泰資, 河野省三, 平岩篤, 川原田洋, 川原田洋
応用物理学会春季学術講演会講演予稿集(CD-ROM) 65th ROMBUNNO.18p‐F206‐5 2018.03
RF窒素プラズマ支援MBE成長によるダイヤモンド(111)基板上のAlN薄膜の質とバンドオフセット
河野省三, 蔭浦泰資, 梶家美貴, 加藤かなみ, BUENDIA Jorge J, 河合空, 川原田洋, 川原田洋
応用物理学会春季学術講演会講演予稿集(CD-ROM) 65th ROMBUNNO.18p‐F206‐4 2018.03
Vessel Gateを用いたダイヤモンド電解質溶液ゲートFETのpH Sensing
井山裕太郎, 五十嵐圭為, SHAILI M.S, 新谷幸弘, 新谷幸弘, 川原田洋, 川原田洋
応用物理学会春季学術講演会講演予稿集(CD-ROM) 65th ROMBUNNO.18p‐F206‐13 2018.03
CVD法によりブロック層を形成した縦型2DHGダイヤモンドMOSFETの特性評価
岩瀧雅幸, 大井信敬, 工藤拓也, 牟田翼, 大久保智, 露崎活人, 蔭浦泰資, 稲葉優文, 稲葉優文, 平岩篤, 川原田洋, 川原田洋
応用物理学会秋季学術講演会講演予稿集(CD-ROM) 78th ROMBUNNO.8a‐S22‐9 2017.08
窒素終端およびシリコン終端ダイヤモンド中の浅いNVセンターのスピン特性
薗田隆弘, 河合空, 山野颯, 加藤かなみ, 蔭浦泰資, 福田諒介, 岡田拓真, 春山盛善, 春山盛善, 谷井孝至, 山田圭介, 小野田忍, 寺地徳之, 加田渉, 花泉修, 河野省三, 河野省三, 磯谷順一, 川原田洋, 川原田洋
応用物理学会秋季学術講演会講演予稿集(CD-ROM) 78th ROMBUNNO.6p‐A412‐3 2017.08
縦型2DHGダイヤモンドMOSFETsの動作解析と絶縁破壊電圧の向上
大井信敬, 工藤拓也, 牟田翼, 大久保智, 露崎活人, 蔭浦泰資, 稲葉優文, 稲葉優文, 小野田忍, 平岩篤, 川原田洋, 川原田洋
応用物理学会秋季学術講演会講演予稿集(CD-ROM) 78th ROMBUNNO.6p‐A412‐7 2017.08
水素終端ダイヤモンド表面上へ形成したSiO2薄膜が2次元正孔ガス層に及ぼす影響
矢部太一, 工藤拓也, 河合空, 梶家美貴, 大井信敬, 大久保智, 堀川清貴, 蔭浦泰資, 河野省三, 平岩篤, 川原田洋, 川原田洋
応用物理学会秋季学術講演会講演予稿集(CD-ROM) 78th ROMBUNNO.6p‐A412‐12 2017.08
ダイヤモンドSGFET(溶液ゲートFET)のデバイスシミュレーション
井山裕太郎, 阿部修平, 五十嵐圭為, 稲葉優文, 稲葉優文, 大井信敬, 新谷幸弘, 新谷幸弘, 川原田洋
応用物理学会秋季学術講演会講演予稿集(CD-ROM) 78th ROMBUNNO.6p‐A412‐15 2017.08
浅い単一NVセンターの規則的配列を用いた表面の水素核スピンの検出
福田諒介, 東又格, 岡田拓真, 加賀美理沙, 寺地徳之, 小野田忍, 春山盛善, 春山盛善, 山田圭介, 稲葉優文, 山野颯, BALASUBRAMANIAN P, STUERNER F, SCHMITT S, MCGUINNESS L.P, JELEZKO F, 大島武, 品田高宏, 川原田洋, 加田渉, 花泉修, 磯谷順一, 谷井孝至
応用物理学会春季学術講演会講演予稿集(CD-ROM) 64th ROMBUNNO.14a‐412‐6 2017.03
ダイヤモンドセンシング応用に向けたダイヤ表面のNH2終端化評価
梶家美貴, 加藤かなみ, 河合空, 山野颯, 五十嵐圭為, SHAILI M.S, SUAEBAH Evi, 蔭浦泰資, 稲葉優文, 河野省三, 川原田洋, 川原田洋
応用物理学会春季学術講演会講演予稿集(CD-ROM) 64th ROMBUNNO.14a‐412‐4 2017.03
河合空, 山野颯, 梶家美貴, 加藤かなみ, 蔭浦泰資, 稲葉優文, 福田諒介, 岡田拓真, 東又格, 春山盛善, 春山盛善, 谷井孝至, 山田圭介, 小野田忍, 寺地徳之, 加田渉, 花泉修, 磯谷順一, 川原田洋, 川原田洋
応用物理学会春季学術講演会講演予稿集(CD-ROM) 64th ROMBUNNO.14a‐412‐3 2017.03
大井信教, 工藤拓也, 牟田翼, 大久保智, 露崎活人, 星野晴華, 蔭浦泰資, 稲葉優文, 小野田忍, 平岩篤, 川原田洋, 川原田洋
応用物理学会春季学術講演会講演予稿集(CD-ROM) 64th ROMBUNNO.14p‐412‐3 2017.03
川原田洋, 川原田洋, 山野颯, 河合空, 梶家美貴, 加藤かなみ, 蔭浦泰資, 稲葉優文, 岡田拓真, 東又格, 春山盛善, 春山盛善, 谷井孝至, 山田圭介, 小野田忍, 寺地徳之, 加田渉, 花泉修, 磯谷順一
応用物理学会春季学術講演会講演予稿集(CD-ROM) 64th ROMBUNNO.15p‐F205‐5 2017.03
終端処理による多結晶ダイヤ電界効果トランジスタセンサのpH感度制御
新谷幸弘, 新谷幸弘, 小河晃太朗, 川原田洋
化学工学会秋季大会研究発表講演要旨集(CD-ROM) 48th ROMBUNNO.I105 2016.09
DNAのNMR検出に向けた部分NH2終端ダイヤモンド中の浅いNVセンター
梶家美貴, 加藤かなみ, 河合空, 山野颯, SUAEBAH Evi, 蔭浦泰資, 稲葉優文, 東又格, 春山盛善, 春山盛善, 谷井孝至, 山田圭介, 小野田忍, 寺地徳之, 加田渉, 花泉修, 磯谷順一, 河野省三, 川原田洋, 川原田洋
応用物理学会秋季学術講演会講演予稿集(CD-ROM) 77th ROMBUNNO.13p‐A26‐8 2016.09
稲葉優文, 五十嵐圭為, 楢村卓朗, 阿部修平, 柴田将暢, 新谷幸弘, 平岩篤, 川原田洋, 川原田洋
応用物理学会秋季学術講演会講演予稿集(CD-ROM) 77th ROMBUNNO.14p‐A26‐15 2016.09
五十嵐圭為, 楢村卓朗, SHAILI M.S, 稲葉優文, 新谷幸弘, 新谷幸弘, 平岩篤, 川原田洋
応用物理学会春季学術講演会講演予稿集(CD-ROM) 63rd ROMBUNNO.19P-H103-16 2016.03
21aBK-4 Current Status of Creation Technique of Color Centers in Diamonds by Quantum Beams
Onoda S, Muller Christoph, McGuinness Liam, Balasubramanian Priyadharshini, Naydenov Boris, Jelezko Fedor, Sato S.-i, Ohshima T, Kada W, Hanaizumi O, Tanii T, Haruyama M, Kawarada H, Teraji T, Isoya J, Koike G, Higashimata I, Inaba M, Yamano K, Kato K
Meeting Abstracts of the Physical Society of Japan 71 ( 0 ) 725 - 726 2016
黒ダイヤモンドを用いた電解質溶液ゲートFETの電気的特性評価
楢村卓朗, SHAILI M.S, 稲葉優文, 小林幹典, 新谷幸弘, 新谷幸弘, 平岩篤, 川原田洋
応用物理学会秋季学術講演会講演予稿集(CD-ROM) 76th ROMBUNNO.15P-4F-6 2015.08
多結晶ボロンドープダイヤモンド電解質溶液ゲート電界効果トランジスタセンサのFET‐IV特性の評価
新谷幸弘, 新谷幸弘, 小河晃太朗, 川原田洋
日本分析化学会年会講演要旨集 64th 348 2015.08
30aCM-9 Change of T_c due to crystallinity in superconducting diamond
Okazaki H., Wakita T., Sonoyama J., Hamada T., Kittaka T., Muraoka Y., Yokoya T., Muro T., Nakamura T., Kurihara S., Kawarada H., Yamaguchi T., Takeya H., Takano Y.
Meeting abstracts of the Physical Society of Japan 69 ( 1 ) 675 - 675 2014.03
27aCG-11 Shubnikov-de Haas oscillations of electric field induced carriers in diamond
Yamaguchi T., Okazaki H, Deguchi K., Uji S., Takeya H., Takano Y., Tsuboi H., Kawarada H.
Meeting abstracts of the Physical Society of Japan 69 ( 1 ) 548 - 548 2014.03
ボロンドープチャネルを用いたフッ素終端電解質溶液ゲートFETの作成
小林幹典, 新谷幸弘, 明道三穂, 川原田洋
応用物理学会春季学術講演会講演予稿集(CD-ROM) 61st ROMBUNNO.18P-D6-16 2014.03
蔭浦泰資, 古閑三靖, ISHAK Khairul. Khalil, 新谷幸弘, 長谷川雅考, 平岩篤, 川原田洋
ダイヤモンドシンポジウム講演要旨集 27th 34 - 35 2013.11
小林幹典, 新谷幸弘, 明道三穂, 川原田洋
応用物理学会秋季学術講演会講演予稿集(CD-ROM) 74th ROMBUNNO.18A-D1-10 2013.08
蔭浦泰資, 古閑三靖, ISHAK Khairul Khalil, 新谷幸弘, 長谷川雅考, 平岩篤, 川原田洋
応用物理学会秋季学術講演会講演予稿集(CD-ROM) 74th ROMBUNNO.18A-D1-7 2013.08
ARPES study of heavily B-doped superconducting diamond with T_c of 25K
Okazaki H., Wakita T., Sonoyama J., Hamada T., Kittaka T., Muraoka Y., Yokoya T., Muro T., Nakamura T., Kurihara S., Kawarada H., Yamaguchi T., Takeya H., Takano Y.
Meeting abstracts of the Physical Society of Japan 68 ( 2 ) 440 - 440 2013.08
Electric field-induced conductivity on diamond surface at low temperatures
Yamaguchi T., Deguchi K., Okazaki H., Takeya H., Takano Y., Tsuboi H., Kawarada H.
Meeting abstracts of the Physical Society of Japan 68 ( 2 ) 474 - 474 2013.08
Electric field-induced conductivity on diamond surface at low temperatures
Yamaguchi T., Deguchi K., Okazaki H., Takeya H., Takano H., Tsuboi H., Kawarada H.
Meeting abstracts of the Physical Society of Japan 68 ( 2 ) 746 - 746 2013.08
26pXZE-11 Electric field control of diamond surface conductivity using ionic liquids II
Yamaguchi T., Watanabe T., Deguchi K., Watanabe E., Oosato H., Tsuya D., Takeya H., Takano Y., Kurihara S., Kawarada H.
Meeting abstracts of the Physical Society of Japan 68 ( 1 ) 919 - 919 2013.03
26pXZE-11 Electric field control of diamond surface conductivity using ionic liquids II
Yamaguchi T., Watanabe T., Deguchi K., Watanabe E., Oosato H., Tsuya D., Takeya H., Takano Y., Kurihara S., Kawarada H.
Meeting abstracts of the Physical Society of Japan 68 ( 1 ) 595 - 595 2013.03
Ishizaka et al. Reply
K. Ishizaka, R. Eguchi, S. Tsuda, A. Chainani, T. Yokoya, T. Kiss, T. Shimojima, T. Togashi, S. Watanabe, C. -T. Chen, Y. Takano, M. Nagao, I. Sakaguchi, T. Takenouchi, H. Kawarada, S. Shin
PHYSICAL REVIEW LETTERS 102 ( 19 ) 2009.05
Other
Scanning tunneling microscopy/spectroscopy on superconducting diamond films
T. Nishizaki, Y. Takano, M. Nagao, T. Takenouchi, H. Kawarada, N. Kobayashi
New Diam. Front. Carbon Technol. 17 21 - 31 2007
Energy gap and surface structure of superconducting diamond films probed by scanning tunneling microscopy
T. Nishizaki, Y. Takano, M. Nagao, T. Takenouchi, H. Kawarada, N. Kobayashi
Physica C 460 210 - 211 2007
Direct evidence for root growth of vertically aligned single-walled carbon nanotubes by microwave plasma chemical vapor deposition
T Iwasaki, GF Zhong, T Aikawa, T Yoshida, H Kawarada
JOURNAL OF PHYSICAL CHEMISTRY B 109 ( 42 ) 19556 - 19559 2005.10
Rapid communication, short report, research note, etc. (scientific journal)
Bドープ(100)ダイヤモンド水素終端表面を利用したFETの作成
斉藤丈靖, 小倉政彦, PARK K-H, 平間一行, 梅沢仁, 川原田洋, 大串秀世
ダイヤモンドシンポジウム講演要旨集 18th 2004
13aPS-123 Superconductivity in CVD Diamond Thin Film
Takano Y, Nagao M, Kobayashi K, Umezawa H, Sakaguchi I, Tachiki M, Hatano T, Kawarada H
Meeting Abstracts of the Physical Society of Japan 59 ( 0 ) 2004
ダイヤモンドin-plane-gated FETのヒステリシス特性
伊藤裕, 澄川雄, 小林健作, 立木実, 梅沢仁, 川原田洋
ダイヤモンドシンポジウム講演要旨集 17th 192 - 193 2003.11
ダイヤモンド微細in‐plane‐gated FETにおける特性解析
小林健作, 立木実, 澄川雄, 伊藤裕, 梅沢仁, 川原田洋
応用物理学会学術講演会講演予稿集 64th ( 2 ) 520 2003.08
ダイヤモンドin‐plane‐gated FETのヒステリシス特性
伊藤裕, 澄川雄, 小林健作, 立木実, 梅沢仁, 川原田洋
応用物理学会学術講演会講演予稿集 64th ( 2 ) 521 2003.08
アミノ修飾されたダイヤモンド電解質溶液ゲートFETのpH依存性
中村雄介, 金沢啓史, 堺俊克, 梅沢仁, 立木実, 川原田洋, SONG K‐S
応用物理学関係連合講演会講演予稿集 50th ( 2 ) 624 2003.03
ダイヤモンドin‐plane‐gated FETの相互コンダクタンス向上とヒステリシス効果
小林健作, 立木実, 坂野時習, 澄川雄, 梅沢仁, 川原田洋
応用物理学関係連合講演会講演予稿集 50th ( 2 ) 623 2003.03
SONG K S, 堺俊克, 金沢啓史, 藤原直樹, 中村雄介, 川村正太, 梅沢仁, 立木実, 川原田洋
応用物理学関係連合講演会講演予稿集 50th ( 2 ) 625 2003.03
河野真宏, 宮本真吾, 松平弘樹, 石坂博明, 中沢一志, 梅沢仁, 立木実, 川原田洋, SONG K S
応用物理学関係連合講演会講演予稿集 50th ( 2 ) 623 2003.03
畑英夫, 梅沢仁, 貝原雄, 金沢啓史, 立木実, 船津高志, 川原田洋, SONG K‐S, ZHANG G‐J
応用物理学関係連合講演会講演予稿集 50th ( 2 ) 617 2003.03
高密度励起下におけるIIa型ダイヤモンドの励起子と電子正孔液滴のCL評価
河井啓朗, 中沢一志, 梅沢仁, 立木実, 川原田洋
応用物理学関係連合講演会講演予稿集 50th ( 2 ) 616 2003.03
貝原雄, 梅沢仁, 畑英夫, 金沢啓史, 立木実, 川原田洋, SONG K‐S, ZHANG G‐J
応用物理学関係連合講演会講演予稿集 50th ( 2 ) 618 2003.03
ダイヤモンドin‐plane‐gated FETのゲートリーク電流の低減
小林健作, 立木実, 梅沢仁, 坂野時習, 澄川雄, 川原田洋
ダイヤモンドシンポジウム講演要旨集 16th 132 - 133 2002.11
フッ素・酸素・アミノ基によるダイヤモンドの微細領域表面化学修飾
畑英夫, 梅沢仁, 石坂博明, 貝原雄, 金沢啓史, 藤原直樹, 堺俊克, 立木実, 川原田洋
ダイヤモンドシンポジウム講演要旨集 16th 214 - 215 2002.11
中村雄介, 金沢啓史, 堺俊克, SONG K S, 梅沢仁, 立木実, 川原田洋
ダイヤモンドシンポジウム講演要旨集 16th 210 - 211 2002.11
河野真宏, 宮本真吾, 松平弘樹, 石坂博明, 中沢一志, SONG K S, 梅沢仁, 立木実, 川原田洋
ダイヤモンドシンポジウム講演要旨集 16th 202 - 203 2002.11
河野真宏, 石坂博明, 宮本真吾, 松平弘樹, 梅沢仁, 立木実, SONG K, 川原田洋
応用物理学会学術講演会講演予稿集 63rd ( 2 ) 500 2002.09
水素終端ダイヤモンドを用いたイオン感応性FETへのオゾン処理の影響
中村雄介, 金沢啓史, 堺俊克, SONG K‐S, 梅沢仁, 立木実, 川原田洋
応用物理学会学術講演会講演予稿集 63rd ( 2 ) 501 2002.09
立木実, 貝原雄, 坂野時習, 澄川雄, 小林健作, SONG K S, 梅沢仁, 川原田洋
応用物理学会学術講演会講演予稿集 63rd ( 2 ) 494 2002.09
ダイヤモンドin‐plane‐gated FETのゲートリーク電流の低減
小林健作, 立木実, 梅沢仁, 坂野時習, 澄川雄, 川原田洋
応用物理学会学術講演会講演予稿集 63rd ( 2 ) 500 2002.09
堺俊克, 荒木裕太, 金沢啓史, SONG K‐S, 梅沢仁, 立木実, 川原田洋
Chem Sens 18 ( Supplement A ) 154 - 156 2002.04
サイドゲートポテンシャルによるスリット構造トンネル障壁の制御
澄川雄, 立木実, 瀬尾北斗, 坂野時習, 梅沢仁, 川原田洋
応用物理学関係連合講演会講演予稿集 49th ( 2 ) 556 2002.03
金沢啓史, 荒木裕太, 堺俊克, SONG K S, 梅沢仁, 立木実, 川原田洋
応用物理学関係連合講演会講演予稿集 49th ( 2 ) 556 2002.03
CaF2バッシベートされたダイヤモンド表面伝導層の移動度上昇
宮本真吾, 中沢一志, 石坂博明, 谷内寛直, 梅沢仁, 立木実, 川原田洋
応用物理学関係連合講演会講演予稿集 49th ( 2 ) 554 2002.03
硫黄ドープダイヤモンドの電気的及びカソードルミネッセンス評価
中沢一志, 梅沢仁, 立木実, 河村亜紀, 堀内賢治, 石倉威文, 川原田洋
応用物理学関係連合講演会講演予稿集 49th ( 2 ) 560 2002.03
オゾン(O3)処理により高抵抗化され水素終端チャネルでのFET特性
SONG K S, 堺俊克, 金沢啓史, 荒木裕太, 梅沢仁, 立木実, 川原田洋
応用物理学関係連合講演会講演予稿集 49th ( 2 ) 556 2002.03
松平弘樹, 有馬拓也, 梅沢仁, 立木実, 谷内寛直, 石坂博明, 宮本真吾, 川原田洋
応用物理学関係連合講演会講演予稿集 49th ( 2 ) 555 2002.03
先端放電型マイクロ波プラズマCVD装置を用いたIr基板上へのヘテロエピタキシャルダイヤモンド核形成初期過程の考察
藤崎豊克, 立木実, 梅沢仁, 谷山記一, 工藤稔, 川原田洋
応用物理学関係連合講演会講演予稿集 49th ( 2 ) 572 2002.03
堺俊克, 荒木裕太, 金沢啓史, 梅沢仁, 立木実, 川原田洋, SONG K S
電気化学会大会講演要旨集 69th 61 2002.03
Power performance of microwave suface-channel diamond transistors.
Umezawa Hitoshi, Ishiszka Hiroaki, Taniuchi Hirotada, Miyamoto Shingo, Tachiki Minoru, Kawarada Hiroshi
Proceedings of the IEICE General Conference 2002 ( 2 ) 2002.03
宮本真吾, 石坂博明, 谷内寛直, 有馬拓也, 藤原直樹, 梅沢仁, 立木実, 川原田洋
ダイヤモンドシンポジウム講演要旨集 15th 158 - 159 2001.11
松平弘樹, 有馬拓也, 梅沢仁, 立木実, 藤原直樹, 石坂博明, 宮本真吾, 川原田洋, SONG K S
ダイヤモンドシンポジウム講演要旨集 15th 160 - 161 2001.11
澄川雄, 坂野時習, 瀬尾北斗, 梅沢仁, 立木実, 川原田洋
ダイヤモンドシンポジウム講演要旨集 15th 208 - 209 2001.11
金沢啓史, 堺俊克, 荒木裕太, 梅沢仁, 立木実, 川原田洋, SONG K S
ダイヤモンドシンポジウム講演要旨集 15th 190 - 191 2001.11
金澤啓史, 荒木裕太, 堺俊克, 梅沢仁, 立木実, 川原田洋
応用物理学会学術講演会講演予稿集 62nd ( 2 ) 422 2001.09
澄川雄, 立木実, 瀬尾北斗, 坂野時習, 梅澤仁, 川原田洋
応用物理学会学術講演会講演予稿集 62nd ( 2 ) 420 2001.09
宮本真吾, 石坂博明, 谷内寛直, 梅澤仁, 立木実, 川原田洋
応用物理学会学術講演会講演予稿集 62nd ( 2 ) 423 2001.09
High Frequency Performance of Diamond MISFET
Taniuchi Hirotada, Umezawa Hitoshi, Ishizaka Hiroaki, Arima Takuya, Tachiki Minoru, Kawarada Hiroshi
Proceedings of the Society Conference of IEICE 2001 ( 2 ) 2001.08
荒木裕太, 堺俊克, 梅沢仁, 立木実, 川原田洋
Chem Sens 17 ( Supplement A ) 70 - 72 2001.04
原子間力顕微鏡を用いたダイヤモンド表面水素終端伝導層上でのサイドゲートFETの動作機構
坂野時習, 福田徹, 須方健太, 瀬尾北斗, 梅沢仁, 立木実, 川原田洋
応用物理学関係連合講演会講演予稿集 48th ( 2 ) 588 2001.03
Clを含む水溶液中における電解質ゲートダイヤモンドFETの動作特性
堺俊克, 荒木裕太, 梅沢仁, 立木実, 川原田洋
応用物理学関係連合講演会講演予稿集 48th ( 2 ) 591 2001.03
石坂博明, 藤原直樹, 谷内寛直, 有馬拓也, 梅沢仁, 立木実, 川原田洋
応用物理学関係連合講演会講演予稿集 48th ( 2 ) 591 2001.03
AFM陽極酸化プロセスを用いたダイヤモンド単正孔トランジスタの作製
立木実, 瀬尾北斗, 福田徹, 須方健太, 坂野時習, 梅澤仁, 川原田洋
応用物理学関係連合講演会講演予稿集 48th ( 2 ) 588 2001.03
先端放電型マイクロ波プラズマCVD装置を用いたIr基板上へのダイヤモンドヘテロエピタキシャル薄膜の作製
藤崎豊克, 立木実, 梅澤仁, 谷山記一, 工藤稔, 川原田洋
応用物理学関係連合講演会講演予稿集 48th ( 2 ) 581 2001.03
藤原直樹, 石坂博明, 谷内寛直, 有馬拓也, 梅沢仁, 立木実, 川原田洋
応用物理学関係連合講演会講演予稿集 48th ( 2 ) 590 2001.03
AFM陽極酸化法を用いた水素終端ダイヤモンド表面のナノファブリケーション
立木実, 福田徹, 瀬尾北斗, 須方健太, 坂野時習, 梅沢仁, 川原田洋
電気化学会大会講演要旨集 68th 306 2001.03
AFM局所酸化プロセスおよびAr+イオン注入プロセスを用いた表面伝導層サイドゲートFETの作製
坂野時習, 立木実, 梅沢仁, 福田徹, 須方健太, 瀬尾北斗, 川原田洋
ダイヤモンドシンポジウム講演要旨集 14th 172 - 173 2000.11
石坂博明, 藤原直樹, 谷内寛直, 有馬拓也, 梅沢仁, 立木実, 川原田洋
ダイヤモンドシンポジウム講演要旨集 14th 200 - 201 2000.11
先端放電型マイクロ波プラズマCVD装置を用いたIr基板上へのダイヤモンドヘテロエピタキシャル薄膜の作製
藤崎豊克, 立木実, 梅沢仁, 谷山記一, 工藤稔, 川原田洋
ダイヤモンドシンポジウム講演要旨集 14th 42 - 43 2000.11
藤原直樹, 石坂博明, 谷内寛直, 有馬拓也, 梅沢仁, 立木実, 川原田洋
ダイヤモンドシンポジウム講演要旨集 14th 174 - 175 2000.11
藤原直樹, 石坂博明, 有馬拓也, 谷内寛直, 梅沢仁, 立木実, 山中貞則, 竹内大輔, 大串秀世, 川原田洋
応用物理学会学術講演会講演予稿集 61st ( 2 ) 475 2000.09
マイクロ波プラズマCVDによるIr基板上へのダイヤモンド核形成初期過程の考察
藤崎豊克, 立木実, 福田徹, 日根恭子, 梅澤仁, 川原田洋
応用物理学会学術講演会講演予稿集 61st ( 2 ) 471 2000.09
坂野時習, 立木実, 梅澤仁, 福田徹, 須方健太, 瀬尾北斗, 川原田洋
応用物理学会学術講演会講演予稿集 61st ( 2 ) 464 2000.09
石坂博明, 藤原直樹, 谷内寛直, 有馬拓也, 梅沢仁, 立木実, 山中貞則, 竹内大輔, 大串秀世, 川原田洋
応用物理学会学術講演会講演予稿集 61st ( 2 ) 464 2000.09
AFM局所酸化法によって作製した水素終端ダイヤモンド表面伝導層絶縁領域の電気特性評価
福田徹, 立木実, 梅沢仁, 瀬尾北斗, 須方健太, 坂野時習, 川原田洋
応用物理学会学術講演会講演予稿集 61st ( 2 ) 473 2000.09
ハードエレクトロニクス 超低損失パワーデバイス技術 5. ナイトライドとダイヤモンドを含む高周波デバイス 5‐4 ダイヤモンド表面伝導チャネルによる電子デバイス応用の展開
立木実, 梅沢仁, 川原田洋
FEDジャーナル 11 ( 2 ) 100 - 105 2000.08
有馬拓也, 谷内寛直, 梅沢仁, 津川和夫, 立木実, 山中貞則, 竹内大輔, 大串秀世, 川原田洋
応用物理学関係連合講演会講演予稿集 47th ( 2 ) 560 2000.03
谷内寛直, 梅沢仁, 有馬拓也, 立木実, 津川和夫, 山中貞則, 竹内大輔, 大串秀世, 川原田洋
応用物理学関係連合講演会講演予稿集 47th ( 2 ) 561 2000.03
Utilizing Self-Aligned Gate Process Cu/CaF2/Diamond MISFET.
谷内寛直, 有馬拓也, 梅沢仁, 立木実, 津川和夫, 山中貞則, 竹内大輔, 大串秀世, 川原田洋
ダイヤモンドシンポジウム講演要旨集 13th 128 - 129 1999.11
セルフアラインプロセスを用いたダイヤモンドMISFETの作製
谷内寛直, 有馬拓也, 梅沢仁, 立木実, 津川和夫, 川原田洋
応用物理学会学術講演会講演予稿集 60th ( 2 ) 487 1999.09
立木実, 福田徹, 須方健太, 瀬尾北斗, 梅沢仁, 川原田洋
応用物理学会学術講演会講演予稿集 60th ( 2 ) 545 1999.09
水素終端ダイヤモンドFETにおけるプロセス改善による相互コンダクタンスの向上
有馬拓也, 谷内寛直, 梅沢仁, 立木実, 津川和夫, 山中貞則, 竹内大輔, 大串秀世, 川原田洋
応用物理学会学術講演会講演予稿集 60th ( 2 ) 486 1999.09
AFMを用いた電界支援酸化による水素終端ダイヤモンド表面のナノ加工
福田徹, 立木実, 須方健太, 瀬尾北斗, 梅沢仁, 川原田洋
応用物理学会学術講演会講演予稿集 60th ( 2 ) 477 1999.09
積層体、単結晶ダイヤモンド基盤及びその製造方法
川原田 洋, 費 文茜, 森下 葵
Patent
ダイヤモンド電界効果トランジスタ及びその製造方法
川原田 洋, 矢部 太一
Patent
半導体装置及びその製造方法、電界効果トランジスタ
平岩 篤, 堀川 清貴, 河野 省三, 川原田 洋
Patent
ダイヤモンド半導体基板の製造方法
川原田 洋, 平岩 篤, 蔭浦 泰資
Patent
ノーマリオフ動作ダイヤモンド電力素子及びこれを用いたインバータ
川原田 洋, 稲葉 優文, 牛 俊雄, 畢 特, 大井 信敬
Patent
水中通信装置及び水中通信方法
川原田 洋, 井山 裕太郎, 梶家 美貴, 蓼沼 佳斗, 新谷 幸弘
Patent
トランジスタの製造方法及びセンサ素子
6205017
川原田 洋
Patent
カーボンナノチューブの製造方法
6037287
川原田 洋, 落合 拓海, 大原 一慶
Patent
ダイヤモンド薄膜の表面処理方法、電界効果トランジスタの製造方法、及びセンサ素子
川原田 洋
Patent
透明導電体及び透明導電体の製造方法
6099260
川原田 洋
Patent
半導体装置に好適なカーボンナノチューブ束群を用いた半導体装置の製造方法、及び半導体装置
6215537
稲葉 優文, 渋谷 恵, 川原田 洋, 大原 一慶, 落合 拓海
Patent
キャリア輸送方向に対して直交する方向にCNTチャネルを有する電界効果トランジスタ
6215536
稲葉 優文, 川原田 洋, 大原 一慶, 落合 拓海, 渋谷 恵
Patent
電界効果トランジスタ
6215535
川原田 洋, 大原 一慶, 落合 拓海, 稲葉 優文, 渋谷 恵
Patent
電力素子、電力制御機器、電力素子の製造方法
6218062
川原田 洋, 平岩 篤, 大長 央, 齋藤 達也
Patent
カーボンナノチューブ合成装置
6037281
川原田 洋
Patent
カーボンナノチューブ成長用基板、その製造方法及び配向カーボンナノチューブの製造方法
5610298
川原田 洋, 落合 拓海
Patent
電界効果型トランジスター
5713431
川原田 洋
Patent
カーボンナノチューブの製造方法
5555944
大原 一慶, 川原田 洋, 落合 拓海, 飯塚 正知
Patent
カーボンナノチューブの製造方法
5572874
川原田 洋, 落合 拓海, 飯塚 正知, 大原 一慶
Patent
電界効果トランジスタ、その製造方法及びバイオセンサ
5366215
川原田 洋, 田島 慎也
Patent
ジョセフソン素子
5496585
川原田 洋, 河野 明大, 渡邊 惠
Patent
ダイヤモンド薄膜およびダイヤモンド電界効果トランジスター
5483168
川原田 洋, 平間 一行
Patent
電界効果型トランジスタおよび集積回路
5648812
川原田 洋, 水野 潤, 関口 哲志, 齋藤 美紀子
Patent
配向カーボンナノチューブの製造方法
5732636
川原田 洋, 加藤 良吾
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単層カーボンナノチューブ製造方法、半導体配線構造の製造方法、フィールドエミッションディスプレイ用電子部品の製造方法及び探針製造方法
5269352
川原田 洋, 岩崎 孝之
Patent
単層カーボンナノチューブの製造方法およびその製造装置
川原田 洋, 大泊 巌, ジョン ゴウファン
Patent
Japan Scie...
Japan Science and Technology Corporation. Core Research for Evolutional Science and Technology. Research Area: Function Evolution of Materials and Devices based on Electron/Photon Related Phenomena (k2001.10)
文部科学大臣表彰 科学技術賞(研究部門)
2016.04 ダイヤモンドパワートランジス タおよびバイオセンサの研究
応用物理学会フェロー表彰
2010
超伝導科学技術賞
2007
電子スピンの量子状態変化を検出原理に持つカロリーメータの開発
Project Year :
Electron Spin Control of Diamond by Surface Carrier and its Application to Nuclear Spin Detection of Bio-Molecules
Project Year :
Realization of several-qubit quantum register by fabrication of nanoscale-array of NV centers in diamond
Project Year :
Regrowth of carbon nanotubes from zigzag carbon nanotube forest on silicon carbide
Project Year :
ダイヤモンド表面近傍の電子スピン制御による単一核スピンの観測
Project Year :
aptamer
Project Year :
ナノ構造配列を基盤とする分子ナノ工学の構築とマイクロシステムへの展開
科学研究費助成事業(早稲田大学) 科学研究費助成事業(COE形成基礎研究費)
Project Year :
高機能性新半導体デバイス開発
文部科学省
Project Year :
Fabrication of High-Power Blue Emission Diveces Using Chemical Vapor Deposition Diamond
Project Year :
Deposition of High Quality Diamond Film on Beam-Irradiated Surface Using ECR Plasma
Project Year :
エピタクシャル成長の基礎過程
超LSIの微小部位毎の放射線耐性評価技術に関する研究
界面反応の物理・化学
高融点金属単結晶上のNiをバッファ層としたダイヤモンドのエピタキシャル成長
Doping by single Ion Implantation and its application to solid state materials and devices.
Investigation of electron divices for hard atmosphere using heteroepitaxial diamond layr
Environmentally Robust Biosensor Using Field Effect Transistors of Heteroepitaxial Diamond
High breakdown voltage and high frequency field-effect transistors on heteroepitaxial diamond film.
アダマント薄膜表面のナノ機能デザイン
ダイヤモンド薄膜表面の導電性制御によるハイパワー高周波トランジスタの開発
超長寿命触媒微粒子によるセンチメートル長垂直配向単層カーボンナノチューブ合成
Development of High Power and Millimeter-long Wave Diamond Transistors Using Two Dimensional Hole Gas
一塩基遺伝子変異および特定タンパク質検出用ダイヤモンドトランジスタ
Exploring the potential of heteroepitaxial diamond as field effect transistor
M. Syamsul, H. Kawarada [Invited]
2018 E-MRS Fall Meeting & Exhibit (Warsaw, Poland)
Presentation date: 2018.09
RF Performance of ALD-Al2O3 2DHG Diamond MOSFETs at High Voltage Operation for High Output Power
S. Imanishi, N. Oi, S. Okubo, K. Horikawa, T. Kageura, A. Hiraiwa, H. Kawarada
2018 International Conference on Solid State Devices and Materials(SSDM2018) (Tokyo, Japan)
Presentation date: 2018.09
Superconducting Boron-doped Diamond Josephson Junction Operating above Liquid He Temperature, 4.2K
S. Amano, T. Kageura, I. Tsuyuzaki, M. Tachiki, S. Ooi, K. Hirata, S. Arisawa, H. Osato, D. Tsuya, Y. Takano, H. Kawarada
2018 International Conference on Solid State Devices and Materials(SSDM2018) (Tokyo, Japan)
Presentation date: 2018.09
Properties of Shallow Nitrogen Vacancy Centers in Nitrogen Terminated Diamond and Detection of Nuclear Magnetic Resonance
T. Sonoda, S. Kawai, H. Yamano, K. Kato, J. J. Buendia, T. Kageura, Y. Ishii, K. Nagaoka, R. Fukuda, T. Okada, M. Haruyama, T. Tanii, K. Yamada, S. Onoda, W. Kada, O. Hanaizumi, A. Stacey, T. Teraji, S. Kono, J. Isoya, H. Kawarada
2018 International Conference on Solid State Devices and Materials(SSDM2018) (Tokyo, Japan)
Presentation date: 2018.09
New Glass-less pH Sensing System Using Diamond Electrolyte Solution Gate FETs (SGFETs) and Vessel Gate
Y. Iyama, S. Falina, Y. Shintani, H. Kawarada
2018 International Conference on Solid State Devices and Materials(SSDM2018) (Tokyo, Japan)
Presentation date: 2018.09
High-bias-instability Al2O3 films formed by high-temperature annealing after atomic layer deposition
K. Horikawa, A. Hiraiwa, S. Okubo, T. Kageura, H. Kawarada
2018 International Conference on Solid State Devices and Materials(SSDM2018) (Tokyo, Japan)
Presentation date: 2018.09
Normally-Off 2DHG Diamond Al2O3/SiO2 MOSFETs without deteriorating Drain Current Density
T. Yabe, N. Oi, J. J. Buendia, S. Okubo, K. Horikawa, T. Kageura, S. Kono, A. Hiraiwa, H. Kawarada
2018 International Conference on Solid State Devices and Materials(SSDM2018) (Tokyo, Japan)
Presentation date: 2018.09
Vertical-Type 2DHG Diamond MOSFETs with a Few Micro Meter Length Trench Structure
M. Iwataki, N. Oi, K. Horikawa, S. Amano, T. Kageura, M. Inaba, A. Hiraiwa, H. Kawarada
2018 International Conference on Solid State Devices and Materials(SSDM2018) (Tokyo, Japan)
Presentation date: 2018.09
Superconductivity in high quality single crystal boron-doped diamond films with Tc above 10K
T. Kageura, I. Tsuyuzaki, T.Yamaguchi, Y. Takano, H.Kawarada
29th International Conference on Diamond and Carbon Materials (Dubrovnik, Croatia)
Presentation date: 2018.09
相補型パワーインバータに向けたダイヤモンド2次元正孔ガス高耐圧電界効果トランジスタ
川原田 洋 [Invited]
第46回 薄膜・表面物理セミナー(応用物理学会薄膜・表面物理分科会) (東京)
Presentation date: 2018.07
ダイヤモンドパワー電界トランジスタの進展
川原田 洋, 大井信敬, 畢 特, 今西祥一朗, 岩瀧雅幸, 矢部太一, 平岩 篤 [Invited]
電子情報通信学会エレクトロニクスソサイティ シリコン材料・デバイス(SDM)研究会 (名古屋大学、愛知)
Presentation date: 2018.06
Recent Progress of Diamond 2DHG p-FETs for Complementary High Voltage Inverter Application
H. Kawarada [Invited]
International Symposium on Single Crystal Diamond and Electronics(SCDE 2018), (Xi'an, China)
Presentation date: 2018.06
Solution Giant Gate Graphene FET (G3FET) pH Sensor
Syamsul Mohd, Shaili Falina, M. Hasegawa, Y. Koga, H. Kawarada
The 12th New Diamond and Nano Carbons Conference (NDNC 2018) (Arizona, USA)
Presentation date: 2018.05
Superconductivity in Thin- and Micro-Structured Boron-Doped Diamond
T. Kageura, M. Hideko, I. Tsuyuzaki, Y. Takano, M. Tachiki, S. Ooi, H.Kawarada
The 12th New Diamond and Nano Carbons Conference (NDNC 2018) (Arizona, USA)
Presentation date: 2018.05
ダイヤモンド2次元正孔ガスFETを利用した相補型パワーインバータへの応用
川原田 洋
東北大学電気通信研究所-早稲田大学ナノ・ライフ創新研究機構 共同プロジェクト研究(H29/S2, ナノエレクトロニクスに関する連携研究) 平成29年度研究会 (仙台市、宮城県)
Presentation date: 2017.12
Diamond Power p-FETs Using Two-Dimensional Hole Gas for Complementary High Voltage Inverter
H. Kawarada [Invited]
2017 MRS Fall Meeting& Exhibit (Boston, USA)
Presentation date: 2017.11
Time-Dependent Dielectric Breakdown of Atomic-Layer-Deposition Al2O3 Films Formed on GaN
A. Hiraiwa, T. Sasaki, S. Okubo, H. Kawarada
2017 MRS Fall Meeting & Exhibit (Boston, USA)
Presentation date: 2017.11
Effective Boron-Doping Method Using Custom-Built MPCVD System for High Tc Superconducting Diamond
T. Kageura, M. Hideko, I. Tsuyuzaki, Y. Sasama, T. Yamaguchi, Y. Takano, H.Kawarada
2017 MRS Fall Meeting & Exhibit (Boston, USA)
Presentation date: 2017.11
Leakage-Current Reduction in Atomic-Layer-Deposition Al2O3 Films by Al gate/Al2O3 Interface Engineering Using O3 Treatment
S. Okubo, D. Matsumura, A. Hiraiwa, H. Kawarada
2017 MRS Fall Meeting& Exhibit (Boston, USA)
Presentation date: 2017.11
Vertical-Type 2DHG Diamond MOSFETs
N. Oi, T. Kudo, T. Muta, S. Okubo, I. Tsuyuzaki, T. Kageura, M. Inaba, S. Onoda, A. Hiraiwa, H. Kawarada
2017 MRS Fall Meeting & Exhibit (Boston, USA)
Presentation date: 2017.11
Single Crystalline Boron-Doped Diamond Superconducting Quantum Interference Devices
I. Tsuyuzaki, T. Kageura, M. Hideko, Y. Sasama, T. Yamaguchi, Y. Takano, M.Tachiki, S. Ooi, K. Hirata, S. Arisawa, H. Kawarada
2017 MRS Fall Meeting Exhibit (Boston, USA)
Presentation date: 2017.11
Charge Stability and Coherence Property of Shallow Nitrogen Vacancy Center in Nitrogen Terminated Diamond for DNA Detection
S. Kawai, H. Yamano, T. Sonoda, K.Kato, J. J. Buendia, E. Suaebah, T. Kageura, M. Inaba, R. Fukuda, T. Okada, M. Haruyama, T. Tanii, K. Yamada, S. Onoda, W. Kada, O. Hanaizumi, A. Stacey, T. Teraji, S. Kono, J. Isoya, H. Kawarada
2017 MRS Fall Meeting & Exhibit (Boston, USA)
Presentation date: 2017.11
Device Simulation of Several C-H MOSFETs Diamond Substrates via Two-Dimensional Negatively Charged Sheet Model
J.J. Buendia, M. Shibata, M. Syamsul, H. Kawarada
2017 MRS Fall Meeting & Exhibit (Boston, USA)
Presentation date: 2017.11
高耐圧ダイヤモンドFETの縦型,ノーマリオフ,低オン抵抗への検討
川原田洋 [Invited]
応用物理学会 先進パワー半導体分科会 第4回講演会 (名古屋国際会議場(名古屋))
Presentation date: 2017.11
Vertical Diamond MOSFETs, present characteristics and future perfomance
H. Kawarada
OIST Diamond Workshop 2017 (Okinawa, Japan)
Presentation date: 2017.10
Heavily boron-doping for power electronics and superconductivity
T. Kageura, Y. Takano, H. Kawarada
OIST Diamond Workshop 2017 (Okinawa, Japan)
Presentation date: 2017.10
Normally-off Diamond p-FET Application in Cascode with Breakdown Voltage over 1.7 KV
Te Bi, Junxiong Niu, Nobutaka Oi, Masafumi Inaba, Toshio Sasaki, Hiroshi Kawarada
International Conference on Materials and Systems for Sustainability 2017 (Nagoya, Japan)
Presentation date: 2017.09
Diamond Transistors for Power Electronics and Biosensing
H. Kawarada [Invited]
International conference on Materials and Systems for Sustainability 2017 (ICMaSS 2017)/iLIM-2 (Nagoya, Japan)
Presentation date: 2017.09
Current Conduction in Al2O3 Films Formed by Atomic Layer Deposition Using Water and Ozone as Oxidant
A. Hiraiwa, S. Okubo, D. Matsumura, H. Kawarada
International conference on Materials and Systems for Sustainability 2017 (ICMaSS 2017)/iLIM-2 (Nagoya, Japan)
Presentation date: 2017.09
Single Crystalline Boron-doped Diamond Superconducting Quantum Interference Devices
T.Kageura, I.Tyuyuzaki, M.Hideko, Y.Sasama, T.Yamaguchi, Y.Takano, M.Tachiki, S.Ooi, K.HIrata, S.Arisawa, H.Kawarada
International conference on Materials and Systems for Sustainability 2017 (ICMaSS 2017)/iLIM-2 (Nagoya, Japan)
Presentation date: 2017.09
Growth of Diamond Nanocylinder Forest Using Template-Assisted Antenna-Edge Type Microwave Plasma Chemical Vapor Deposition
W. Fei, M.Inaba, Y.Hirano, H.Masuda, H.Kawarada
International conference on Materials and Systems for Sustainability 2017 (ICMaSS 2017)/iLIM-2 (Nagoya, Japan)
Presentation date: 2017.09
Vertical-type 2DHG Diamond MOSFETs
N. Oi, T. Kudo, T. Muta, S. Okubo, I. Tsuyuzaki, T. Kageura, M. Inaba, S. Onoda, A. Hiraiwa, H. Kawarada
2017 International Conference on Solid State Devices and Materials (Sendai, Japan)
Presentation date: 2017.09
Charge Stability of Shallow Nitrogen Vacancy Center in Diamond with Radical Exposure Nitridation Surface for DNA Detection
S. Kawai, H. Yamano, T. Sonoda, M. Kajiya, K.Kato, J. J. Buendia, T. Kageura, M. Inaba, R. Fukuda, T. Okada, I. Higashimata, M. Haruyama, T. Tanii, K. Yamada, S. Onoda, W. Kada, O. Hanaizumi, A. Stacey, T. Teraji, S. Kono, J. Isoya, H. Kawarada
2017 International Conference on Solid State Devices and Materials (Sendai, Japan)
Presentation date: 2017.09
Boron-doped Diamond Superconducting Quantum Interference Devices with Two Step-Edge Josephson Junctions
I. Tsuyuzaki, T. Kageura, M. Hideko, Y. Sasama, T. Yamaguchi, Y. Takano, M. Tachiki, K. Hirata, S. Ooi, S. Arisawa, H. Kawarada
2017 International Conference on Solid State Devices and Materials (Sendai, Japan)
Presentation date: 2017.09
Current conduction in H2O-grown ALD-Al2O3 films on Si substrate
S.Okubo, D.Matsumura, K.Horikawa, A.Hiraiwa, H.Kawarada
2017 International Conference on Solid State Devices and Materials (Sendai, Japan)
Presentation date: 2017.09
Normally-off Diamond p-FET Application in Cascode with Breakdown Voltage over 1.7KV
Te Bi, Junxiong Niu, Nobutaka Oi, Masafumi Inaba, Toshio Sasaki, Hiroshi Kawarada
The 2017 international conference on Soild State Devices and Materials (Sendai, Japan)
Presentation date: 2017.09
Common Gate Boron Doped Diamond (BDD) Solution Gate FET for pH sensor
M.Shaili, Y.Shintani, H.Kawarada
The 2017 international conference on Soild State Devices and Materials (Sendai, Japan)
Presentation date: 2017.09
Normally-off and vertical diamond power FETs using 2 dimensional hole gas
H. Kawarada [Invited]
2017 International Symposium on Single Crystal Diamond and Electronics (SCDE2017) (Xi’an, China)
Presentation date: 2017.06
Superconducting Single Crystal Diamond SQUID
T.Kageura, M.Hideko, I.Tsuyuzaki, Y.Sasama, T.Yamaguchi, Y.Takano, M.Tachiki, S.Ooi, K.Hirata, S.Arisawa, H.Kawarada
The 11th New Diamond and Nano Carbons 2017 (Cairns, Australia)
Presentation date: 2017.05
Heteroepitaxial diamond FET for power electronics application
M.Syamsul, J.J. Buendia, N. Oi, S. Okubo, H.Kawarada
The 11th New Diamond and Nano Carbons 2017 (Cairns, Australia)
Presentation date: 2017.05
Precise Control of Voltage Threshold by Electrochemical Oxygen Termination Boron-doped Diamond Solution- Gate Field Effect transistor (SGFET) for PH sensor
M.S Shaili, T. Naramura, M.Inaba, Y.Shintani, H.Kawarada
The 11th New Diamond and Nano Carbons 2017 (Cairns, Australia)
Presentation date: 2017.05
Normally-off Diamond p-FET Application in Cascode with 1735 V Breakdown Voltage
Te Bi, J. Niu, N. Oi, M. Inaba, T. Sasaki, H. Kawarada
The 11th New Diamond and Nano Carbons 2017 (Cairns, Australia)
Presentation date: 2017.05
N-V中心NMRのためのダイヤモンド表面の電荷安定性
川原田 洋, 山野 颯, 河合 空, 梶家 美貴, 加藤かなみ, 蔭浦 泰資, 稲葉 優文, 岡田 拓真, 東又格, 春山 盛善, 谷井 孝至, 山田 圭介, 小野田 忍, 寺地 徳之, 加田 渉, 花泉 修, 磯谷 順一
第64回応用物理学会春季学術講演会 (横浜市、神奈川)
Presentation date: 2017.03
Normally-off Diamond MOSFETs in Cascode Configuration with Breakdown Voltage over 1.7kV
J. Niu, T. Bi, D. Matsumura, T. Kudo, M. Inaba, T. Sasaki, H.Kawarada
Hasselt Diamond Workshop 2017 - SBDD XXII (Hasselt, Belgium)
Presentation date: 2017.03
Amine termination of Nanocrystalline Diamond surface by Nitrogen Radical Beam (NRB) for Biosensing Application
E. Suaebah, Y. Seshimo, T. Naramura, M. Hasegawa, H. Kawarada
7th Annual Basic Science International Conference (Malang, Indonesia)
Presentation date: 2017.03
2次元正孔ガス層による耐圧>1600VダイヤモンドpチャネルMOSFET
川原田 洋, 北林 祐哉, 柴田 将暢, 松村 大輔, 工藤 拓也, 牟田 翼, 大井 信敬, 稲葉 優文, 平岩 篤
「電子デバイス界面テクノロジー研究会—材料・プロセス・デバイス特性の物理—」(第22回研究会) (三島市、静岡県)
Presentation date: 2017.01
Lattice strain in superconducting boron-doped diamond
T. Kageura, M. Shibata, Y. Sasama, T. Yamaguchi, Y. Takano, H. Kawarada
IWSRFM 2016 (International Workshop on Superconductivity and Related Functional Materials) (Tsukuba, Japan)
Presentation date: 2016.12
Boron-doped diamond SQUID with regrowth-induced step edge structure Josephson junction
M. Hideko, T. Kageura, I. Tuyuzaki, M. Shibata, Y. Kitabayashi, Y. Sasama, T. Yamaguchi, Y. Takano, M. Tachiki, S. Ooi, K. Hirata, S. Arisawa, H. Kawarada
IWSRFM 2016(International Workshop on Superconductivity and Related Functional Materials) (Tukuba, Japan)
Presentation date: 2016.12
Atomic-Layer-Deposition Temperature Effect on Current Conduction in Al2O3 Films as Investigated Using Space-Charge-Controlled Field Emission Model
A. Hiraiwa, D. Matsumura, H. Kawarada
2016 MRS Fall Meeting & Exhibit (Boston, USA)
Presentation date: 2016.11
Vertically Oriented Graphite Layer Formed on (001) Diamond by Hot Implantation and High Temperature Annealing
M. Inaba, H. Yamano, T. Kageura, H. Kawarada
2016 MRS Fall Meeting& Exhibit (Boston, USA)
Presentation date: 2016.11
Over 2000 V Breakdown Voltage of Normally-off C-H Diamond MOSFETs with high threshold voltage
T. Kudo, Y. Kitabayashi, D. Matsumura, Y. Hayashi, M. Inaba, A. Hiraiwa, H. Kawarada
2016 MRS Fall Meeting & Exhibit (Boston, USA)
Presentation date: 2016.11
Superconducting Boron-doped Diamond Josephson Junction with Regrowth-induced Step Edge Structure
M. Hideko, T. Kageura, I. Tuyuzaki, M. Shibata, Y. Kitabayashi, Y. Sasama, T. Yamaguchi, Y. Takano, M. Tachiki, S. Ooi, K. Hirata, S. Arisawa, H. Kawarada
2016 MRS Fall Meeting & Exhibit (Boston, USA)
Presentation date: 2016.11
Charge State Stabilization of Shallow Nitrogen Vacancy Centers in Diamond by Oxygen Ambient Surface Modification
H. Yamano, K. Kato, T. Kageura, M. Inaba, T. Okada, I. Higashimata, M. Haruyama, T. Tanii, S. Onoda, W. Kada, O. Hanaizumi, T. Teraji, J. Isoya, H. Kawarada
2016 MRS Fall Meeting & Exhibit (Boston, USA)
Presentation date: 2016.11
Common-Gate Measurement System of Solution-Gate Field-Effect Transistor for pH Sensing
K. Igarashi, T. Naramura, S. Falina, S. Abe, M. Inaba, Y. Shintani, A. Hiraiwa, H. Kawarada
2016 MRS Fall Meeting & Exhibit (Boston, USA)
Presentation date: 2016.11
The Electron States of Shallow NV Centers after DNA Immobilization on Partially NH 2 Terminated Diamond
K. Kato, H. Yamano, T. Kageura, M. Inaba, M. Haruyama, Evi Suaebah, O.Hanaizumi, W. Kada, S. Onoda, T. Teraji, J. Isoya, H. Kawarada
2016 MRS Fall Meeting & Exhibit (Boston, USA)
Presentation date: 2016.11
Vertical MOSFETs-Using C-H Diamond with Trench-Channel
T. Muta, N. Oi, M. Inaba, T. Saito, D. Matsumura, T. Kudo, A. Hiraiwa, H. Kawarada
2016 MRS Fall Meeting & Exhibit (Boston, USA)
Presentation date: 2016.11
Diamond Nanocylinder Forest Formed by Porous Alumina Template
W. Fei, M. Inaba, Y. Hirano, H. Masuda, H. Kawarada
2016 MRS Fall Meeting & Exhibit (Boston, USA)
Presentation date: 2016.11
Stacking Faults and Twins Induced by Lattice Relaxation in Superconducting Boron-Doped Diamond Synthesized by Microwave Plasma Chemical Vapor Deposition
T. Kageura, M. Hideko, M. Shibata, Y. Sasama, T. Yamaguchi, Y. Takano, H.Kawarada
2016 MRS Fall Meeting & Exhibit (Boston, USA)
Presentation date: 2016.11
Development of New Amorphous Oxide Semiconductor by Controlling Defects
T. Kamiya, K. Ide, H. Hiramatsu, Y. Setsuhara, A. Hiraiwa, H. Kawarada, H. Hosono
The 1st International Symposium on Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development (iLIM-1) (Osaka, Japan)
Presentation date: 2016.10
Complementary Study for Effects of Annealing on Density and Pore Structures in Amorphous In-Ga-Zn-O Thin-Film Transistors
K. Ide, M. Ota, K. Takenaka, Y. Setsuhara, A. Hiraiwa, H. Kawarada, H. Hiramatsu, H. Hosono, T. Kamiya
The 1st International Symposium on Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development (iLIM-1) (Osaka, Japan)
Presentation date: 2016.10
Current Conduction in Atomic-Layer-Deposition Al2O3 as Investigated Based on Space-Charge-Controlled Field Emission Model
A. Hiraiwa, D. Matsumura, S. Okubo, H. Kawarada
The 1st International Symposium on Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development (iLIM-1) (Osaka, Japan)
Presentation date: 2016.10
Superconducting (111) Boron-doped Diamond Josephson Junction with Regrowth-induced (001) Step Edge Structure
M. Hideko, T. Kageura, I. Tuyuzaki, M. Shibata, Y. Kitabayashi, Y. Sasama, T. Yamaguchi, Y. Takano, M. Tachiki, S. Ooi, K. Hirata, S. Arisawa, H. Kawarada
2016 International Conference on Solid State Devices and Materials (Tukuba, Japan)
Presentation date: 2016.09
Vertical MOSFET using C-H Diamond with Trench-channel
T. Muta, T. Saito, M. Inaba, D. Matsumura, T. Kudo, Y. Kitabayashi, A. Hiraiwa, H. Kawarada
2016 International Conference on Solid State Devices and Materials (Tukuba, Japan)
Presentation date: 2016.09
Coherence Properties and Charge Stability of Shallow Implanted Nitrogen Vacancy Centers in 12C enriched Diamond
H. Yamano, K. Kato, T. Kageura, M. Inaba, T. Okada, I. Higashimata, M. Haruyama, T. Tanii, S. Onoda, W. Kada, O. Hanaizumi, T. Teraji, J. Isoya, H. Kawarada
2016 International Conference on Solid State Devices and Materials (Tsukuba, Japan)
Presentation date: 2016.09
Planer Diamond P-channel MOSFETs with Breakdown Voltage VB > 1.8kV and High Drain Current Density by 2DHG
H.Kawarada, Y.Kitabayashi, M.Syamsul N.S.B, M.Shibata, D.Matsumura, T.Kudo, A.Hiraiwa [Invited]
2016 International Conference on Solid State Devices and Materials
Presentation date: 2016.09
Gate Threshold Voltage Control of C-H Diamond MOSFETs
T. Kudo, Y. Kitabayashi, D. Matsumura, Y. Hayashi, M. Inaba, A. Hiraiwa, H. Kawarada
International Conference on Solid State Devices and Materials (Tsukuba, Japan)
Presentation date: 2016.09
High endurance white polycrystalline diamond FET for power device application
M.Syamsul, Y.Kitabayashi, D.Matsumura, H.Kawarada
2016. International Conference on Diamond and Carbon Materials (Montpellier, France)
Presentation date: 2016.09
Cost effective white polycrystalline diamond FET using 2D hole gas
M.Syamsul, Y.Kitabayashi, D.Matsumura, H.Kawarada
2016. NANO KOREA 2016 Symposium (Ilsan, Korea)
Presentation date: 2016.07
Diamond Power MOSFETs using 2 Dimensional Hole Gas
H. Kawarada [Invited]
2016 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2016) (Hakodate, Japan)
Presentation date: 2016.07
Amine termination of nanocrystalline diamond surface by nitrogen radical beam (NRB) for biosensing application
E. Suaebah, Y. Seshimo, T. Naramura, M. Hasegawa, H. Kawarada
10th International Conference on New Diamond and Nano Carbons(NDNC2016 (Xi’an, China)
Presentation date: 2016.06
Diamond MOSFETs Using 2D Hole Gas with 1700V Breakdown Voltage
H. Kawarada, T. Yamada, D. Xu, Y. Kitabayashi, M. Shibata, D. Matsumura, M. Kobayashi, T. Saito, T. Kudo, M. Inaba, A. Hiraiwa
28th International Symposium on Power Semiconductor Devices and ICs (Prague, Czech Republic)
Presentation date: 2016.06
Diamond as Power Electronics Platform
H. Kawarada, Y. Kitabayashi, M. Shibata, D. Matsumura, T. Saito, T. Kudo, T. Muta, M. Inaba, A. Hiraiwa [Invited]
10th International Conference on New Diamond and Nano Carbons(NDNC2016) (Xi’an, China)
Presentation date: 2016.05
Diamond as Power Electronics Platform
H. Kawarada, Y. Kitabayashi, M. Shibata, D. Matsumura, T. Saito, T. Kudo, T. Muta, M. Inaba, A. Hiraiwa [Invited]
10th International Conference on New Diamond and Nano Carbons(NDNC2016) (Xi’an, China)
Presentation date: 2016.05
Growth of diamond nanorods using antenna-edge-type microwave plasma-assisted chemical vapor deposition
W. Fei, M.Inaba, Y.Hirano, H.Masuda, H.Kawarada
10th International Conference on New Diamond and Nano Carbons(NDNC2016) (Xi’an, China)
Presentation date: 2016.05
Electric properties of Au ohmic-contact on hydrogen-terminated surface-conductive diamond (001)
S. Kono, M. Inaba, A. Hiraiwa, H. Kawarada
10th Intern. Conf. New Diamond Nano Carbonds (Xi'an China)
Presentation date: 2016.05
Growth of diamond nanorods using antenna-edge-type microwave plasma-assisted chemical vapor deposition
W. Fei, M.Inaba, Y.Hirano, H.Masuda, H.Kawarada
10th International Conference on New Diamond and Nano Carbons(NDNC2016) (Xi’an, China)
Presentation date: 2016.05
Electric properties of Au ohmic-contact on hydrogen-terminated surface-conductive diamond (001)
S. Kono, M. Inaba, A. Hiraiwa, H. Kawarada
10th Intern. Conf. New Diamond Nano Carbonds (Xi'an China)
Presentation date: 2016.05
Physical Properties of Superconducting Boron-Doped Diamonds
T.Kageura, M.Shibata, M.Hideko, Y.Sasama, T.Yamaguchi, Y.Takano, H.Kawarada
2016 MRS Spring Meeting & Exhibit (Phoenix, USA)
Presentation date: 2016.03
Normally-Off C-H Diamond MOSFET with the Breakdown Voltage of Above 2000V
H.Kawarada, Y.Kitabayashi, M.Shibata, Y.Hayashi, A.Hiraiwa
2016 MRS Spring Meeting & Exhibit (Phoenix, USA)
Presentation date: 2016.03
Physical Properties of Superconducting Boron-Doped Diamonds
T.Kageura, M.Shibata, M.Hideko, Y.Sasama, T.Yamaguchi, Y.Takano, H.Kawarada
2016 MRS Spring Meeting & Exhibit (Phoenix, USA)
Presentation date: 2016.03
Normally-Off C-H Diamond MOSFET with the Breakdown Voltage of Above 2000V
H.Kawarada, Y.Kitabayashi, M.Shibata, Y.Hayashi, A.Hiraiwa
2016 MRS Spring Meeting & Exhibit (Phoenix, USA)
Presentation date: 2016.03
Diamond functionalization for Biosensing Application
E. Suaebah, T. Naramura, M. Hasegawa, H. Kawarada
2016. The 6th Basic Science International Meeting (Malang, Indonesia)
Presentation date: 2016.03
Direct partial CH3 termination into carboxyl terminated diamond surface for biosensor
E. Suaebah, T. Naramura, H. Kawarada
2016.The 6th Basic Science International Meeting (Malang, Indonesia)
Presentation date: 2016.03
Diamond functionalization for Biosensing Application
E. Suaebah, T. Naramura, M. Hasegawa, H. Kawarada
2016. The 6th Basic Science International Meeting (Malang, Indonesia)
Presentation date: 2016.03
Direct partial CH3 termination into carboxyl terminated diamond surface for biosensor
E. Suaebah, T. Naramura, H. Kawarada
2016.The 6th Basic Science International Meeting (Malang, Indonesia)
Presentation date: 2016.03
High Voltage Breakdown 1.8 kV Hydrogenated Black Diamond Field Effect Transistor
M.Syamsul.N.B.S.B, Y. Kitabayashi, D. Matsumura, T. Saito, H. Kawarada
2015 MRS Fall Meeting & Exhibit (Boston, USA)
Presentation date: 2015.11
Diamond based Biosensor on Direct Carboxyl Termination for Biomolecule Activation
E. Suaebah, T. Naramura, M. Myodo, M. Hasegawa, H. Kawarada
2015 MRS Fall Meeting & Exhibit (Boston, USA)
Presentation date: 2015.11
Trench-Channel Vertical MOSFET Using C-H Diamond Surface
T. Saito, M. Kobayashi, Y. Kitabayashi, D. Matsumura, M. Inaba, A. Hiraiwa, H. Kawarada
2015 MRS Fall Meeting & Exhibit (Boston, USA)
Presentation date: 2015.11
High-Temperature Electric-Insulation Characteristics of High-Temperature-ALD-Grown Al2O3 Films
D. Matsumura, A. Hiraiwa, H. Kawarada
2015 MRS Fall Meeting & Exhibit (Boston, USA)
Presentation date: 2015.11
Structural and Electrical Properties of Double-Domain Heteroepitaxial AlN on (001) Diamond Substrate
Y. Hayashi, W. Ono, D. Matsumura, A. Hiraiwa, H. Kawarada
2015 MRS Fall Meeting & Exhibit (Boston, USA)
Presentation date: 2015.11
Device Simulation of C-H Diamond MOSFETs based on 2DHG formed by 2D Fixed Negative Charge
M.Shibata, Y.Kitabayashi, A.Hiraiwa, H. Kawarada
(Boston, USA)
Presentation date: 2015.11
C-H Diamond MOSFETs with 1.7 kV Breakdown Voltage and >190mA/mm Current Density
Y. Kitabayashi, T. Yamada, Dechen Xu, T. Saito, D. Matsumura, A. Hiraiwa, H. Kawarada
2015 MRS Fall Meeting & Exhibit (Boston, USA)
Presentation date: 2015.11
High-Reliability SiO2 Films Formed on Diamond by Thermal Oxidation of Si
T. Hara, A. Hiraiwa, H. Kawarada
2015 MRS Fall Meeting & Exhibit (Boston, USA)
Presentation date: 2015.11
Metal-Catalyst Free Carbon Nanotube Growth from Templete Carbon Nanotube Forest Formed by SiC Surface Decomposition
Y. Hirano, M. Inaba, K. Suzuki, W. Fei, W. Norimatsu, M. Kusunoki, H. Kawarada
2015 MRS Fall Meeting & Exhibit (Boston, USA)
Presentation date: 2015.11
New High-Temperature Instability of ALD-Al2O3 MIS Capacitors
D. Matsumura, A. Hiraiwa, H. Kawarada
IWDTF (International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES SCIENCE AND TECHNOLOGY) (Tokyo, Japan)
Presentation date: 2015.11
Direct Partial CH3 Termination into Carboxyl
Evi Suaebah, T. Naramura, H. Kawarada
IEEE SENSORS 2015 (Busan, South Korea)
Presentation date: 2015.11
Schottky barrier height lowering at silicon carbide by carbon nanotubes
M. Inaba, K. Suzuki, Y. Hirano, W. Norimatsu, M. Kusunoki, H. Kawarada
16th International Conference on Silicon Carbide and Related Materials (ICSCRM2015) (Giardini Naxos, Italy)
Presentation date: 2015.10
Characterization of Polycrystalline Doped-diamond Electrolyte-solution-gate Field-effect Transistor pH Sensor with/without termination control
Y. Shintani, K. Ogawa, H. Kawarada
The 66th Annual Meeting of the International Society of Electrochemistry (Taiwan)
Presentation date: 2015.10
All-solid-State pH Sensor utilizing Termination-controlled Boron-doped Diamond Surface as pH-sensitive/pH-less-sensitive Interface
Y. Shintani, K. Ogawa, H. Kawarada
The 66th Annual Meeting of the International Society of Electrochemistry (Taiwan)
Presentation date: 2015.10
Trench-channel MOSFET using C-H Diamond Surface
T. Saito, M. Kobayashi, T. Yamada, D. Xu, Y. Kitabayashi, D. Matsumura, M. Inaba, A. Hiraiwa, H. Kawarada
2015 International Conference on Solid State Devices and Materials (Sapporo, Japan)
Presentation date: 2015.09
Effect of Stacking Faults on Magnetic Flux Pinning in BoronDoped Superconducting Diamond Films
M. Shibata, T. Kageura, T. Yamaguchi, Y. Takano, H. Kawarada
2015 International Conference on Solid State Devices and Materials (Sapporo, Japan)
Presentation date: 2015.09
1.7 KV Breakdown C-H Diamond MOSFETs with High Drain Current Density
Y. Kitabayashi, T. Yamada, D. Xu, T. Saito, D. Matsumura, A. Hiraiwa, H.Kawarada
2015 International Conference on Solid State Devices and Materials (Sapporo, Japan)
Presentation date: 2015.09
High Voltage H-terminated Diamond MOSFETs using 2D Hole Gas with >1600V Breakdown and High Current Density
H. Kawarada, T. Yamada, D. Xu, H. Tsuboi, Y. Kitabayashi, A. Hiraiwa [Invited]
International Conference on Diamond and Carbon Materials (Bad Homburg, Germany)
Presentation date: 2015.09
Physical properties of superconducting diamond for quantum devices
T.Kageura, M.Shibata, T.Yamaguchi, Y.Takano, H.Kawarada
Diamond Quantum Sensing Workshop 2015 (Takamatsu, Japan)
Presentation date: 2015.08
Diamond surface fluorescence for device sensing
M. Inaba, H. Yamano, K. Kato, T. Kageura, M. Shibata, S. Onoda, T. Teraji, J. Isoya, T. Tanii, H. Kawarada
Diamond Quantum Sensing Workshop 2015 (Takamatsu, Japan)
Presentation date: 2015.08
Diamond transistors and superconducting devices for N-V center research
H. Kawarada
Diamond Quantum Sensing Workshop 2015 (Takamatsu, Japan)
Presentation date: 2015.08
Lattice strain analysis of superconducting boron doped diamond
T. Kageura, M. Shibata, T. Yamaguchi, Y. Takano, H. Kawarada
The 6th NIMS/MANA-Waseda University International Symposium (Tokyo, Japan)
Presentation date: 2015.07
In-plane conductivity of carbon nanotube forest formed on silicon carbide
M. Inaba, C.-Y. Lee, K. Suzuki, H. Kawarada
The 6th NIMS/MANA-Waseda University International Symposium (Tokyo, Japan)
Presentation date: 2015.07
Carbon nanotubes growth by thermal CVD from the ends of CNT forest on SiC
Y. Hirano, M. Inaba, M Shibuya, K Suzuki, W Norimatsu, M Kusunoki, H Kawarada
NT15: The Sixteenth International Conference on the Science and Application of Nanotubes (Nagoya, Japan)
Presentation date: 2015.06
Low Schottky barrier height at carbon nanotube and silicon carbide interface for power electronic devices
M. Inaba, K. Suzuki, M. Shibuya, C.-Y. Lee, Y. Masuda, N. Tomatsu, A.Hiraiwa, M. Kusunoki, H. Kawarada
NT15: The Sixteenth International Conference on the Science and Application of Nanotubes (Nagoya, Japan)
Presentation date: 2015.06
High-reliability Passivation of Diamond Surface Conduction Layer Using High-temperature H2O-oxidant ALD Growth of Al2O3
A. Hiraiwa, T. Saito, D. Matsumuara, H. Kawarada
AVS 15th International Conference on Atomic Layer Deposition (Portland, USA)
Presentation date: 2015.06
Diamond Power MOSFETs with >1600V Breakdown Voltages and High Current Density
H. Kawarada [Invited]
2015 International Symposium on Single Crystal Diamond and Electronics (SCDE 2015) (Xi'an, China)
Presentation date: 2015.06
Lattice strain dependence of superconducting boron-doped diamond thin film critical thickness
T. Kageura, M. Shibata, T. Sasagawa, H.Kawarada
AMDI-6:The 6th International Symposium on Advanced Materials Development and Integration of Novel Structural Metallic and Inorganic Materials (Tokyo, Japan)
Presentation date: 2015.06
In plane conductivity of dense carbon nanotube forest Formed on silicon carbide for CNT contact evaluation
M. Inaba, K. Suzuki, Y. Hirano, W. Norimatsu, M. Kusunoki, H. Kawarada
AMDI-6:The 6th International Symposium on Advanced Materials Development and Integration of Novel Structural Metallic and Inorganic Materials (Tokyo, Japan)
Presentation date: 2015.06
Carbon nanotube synthesis by non-catalytic CVC from dense carbon nanotube forest
M. Inaba, Y. Hirano, M. Shibata, K. Suzuki, C. Lee, M. Myodo, A. Hiraiwa, W. Norimatsu, M. Kusunoki, H. Kawarada
9th International Conference on New Diamond and Nano Carbons (Shizuoka, Japan)
Presentation date: 2015.05
In-plane conductivity of dense CNT forest formed on Silicon carbide and contact resistivity estimation of parallel adjacent CNT
M. Inaba, C. Lee, K. Suzuki, Y. Hirano, M. Shibuya, M. Myodo, W. Norimatsu, M. Kusunoki, H. Kawarada
9th International Conference on New Diamond and Nano Carbons (Shizuoka, Japan)
Presentation date: 2015.05
Lattice Strain Analysis of Superconducting Boron-Doped Diamond Film by X-ray Diffraction
T. Kageura, M. Shibata, T. Yamaguchi, Y.Takano, H.Kawarada
9th International Conference on New Diamond and Nano Carbons (Shizuoka, Japan)
Presentation date: 2015.05
Isotope analysis of diamond-surface passivation effect of Al2O3 formed using a high-temperature H2O-oxidant ALD method
A. Hiraiwa, T. Saito, D. Matsumuara, H. Kawarada
9th International Conference on New Diamond and Nano Carbons (Shizuoka, Japan)
Presentation date: 2015.05
High power diamond MOSFETs with >1600V breakdown and >100mA/mm current density
H. Kawarada, T. Yamada, D. Xu, H. Tsuboi, T. Saito, Y. Kitabayashi, A. Hiraiwa
9th International Conference on New Diamond and Nano Carbons (Shizuoka, Japan)
Presentation date: 2015.05
Diamond Surface Functionalization Via Carboxyl Termination for ATP 16 Detection
E. Suaebah, T. Naramura, M. Myodo, M. Inaba, X. Wang, R. A. Rahim, H. Kawarada
9th International Conference on New Diamond and Nano Carbons (Shizuoka, Japan)
Presentation date: 2015.05
Wide Temperature (10K- 700K) and High Voltage (~1000V) Operation of C-H Diamond MOSFETs for Power Electronics Application
H. Kawarada, H. Tsuboi, T. Yamada, D. Xu, T. Saito, A. Hiraiwa
IEDM 2014: IEEE International Electron Devices Meeting (San Francisco, CA, USA)
Presentation date: 2014.12
Stability and Formation of Surface Hole Accumulation at C-H Diamond Surface
H. Kawarada, A. Hiraiwa [Invited]
2014 MRS Fall Meeting & Exhibit (Boston, USA)
Presentation date: 2014.11
Fabrication of Diamond Rods for Power Device Application
M. Kobayashi, M. Inaba, M.Syamsul.N.S.B, A. Hiraiwa, H. Kawarada
2014 MRS Fall Meeting & Exhibi (Boston, USA)
Presentation date: 2014.11
Analysis of Superconducting Boron-Doped Diamond Thin Film Using X-Ray Diffraction
T. Kageura, M. Shibata, T. Yamaguchi, Y. Takano, H. Kawarada
2014 MRS Fall Meeting & Exhibit (Boston, USA)
Presentation date: 2014.11
Schottky Barrier Height of Carbon Nanotubes to n-Type 4H-SiC for High Power Device Electrodes
K. Suzuki, M. Inaba, M. Shibuya, C.-Y. Lee, M. Myodo, Y. Hirano, A. Hiraiwa, W. Norimatsu, M. Kusunoki, H. Kawarada
2014 MRS Fall Meeting & Exhibit (Boston, USA)
Presentation date: 2014.11
Nearly 1000V Breakdown Characteristic of C-H Diamond Lateral MOSFETs with Al2O3 Gate Insulator
T. Yamada, H. Tsuboi, D. Xu, Y. Kitabayashi, T. Saito, D. Matsumura, A. Hiraiwa, H. Kawarada
2014 MRS Fall Meeting & Exhibit, Boston (Boston, USA)
Presentation date: 2014.11
Stable Performance of C-H Bonds Diamond MOSFETs at 10K-673K
D. Xu, H. Tsuboi, T. Yamada, Y. Kitabayashi, T. Saito, D. Matsumura, A. Hiraiwa, H. Kawarada
2014 MRS Fall Meeting & Exhibit (Boston, USA)
Presentation date: 2014.11
Electric Property of SiO2/Diamond Structure
Y. Seshimo, T. Hara, Y. Hayashi, T. Hakamata, W. Ono, A.Hiraiwa, H. Kawarada
2014 MRS Fall Meeting & Exhibit (Boston, USA)
Presentation date: 2014.11
Effect of Lattice Strain for Diamond superconductivit
T. Kageura, M. Shibata, T. Sasagawa, H.Kawarada
The 5th International Symposium on Advanced Materials Development and Integration of Novel Structured Metallic and Inorganic Materials (AMDI-5) (Tokyo, Japan)
Presentation date: 2014.11
Carbon nanotube forest for ohmic and heat dissipative electrode of silicon carbide power devices
M. Inaba, K. Suzuki, M. Shibuya, C.-Y. Lee, M. Myodo, Y. Hirano, A. Hiraiwa, W. Norimatsu, M. Kusunoki, H. Kawarada
The 5th International Symposium on Advanced Materials Development and Integration of Novel Structured Metallic and Inorganic Materials (AMDI-5)
Presentation date: 2014.11
C-H surface diamond FETs for high voltage (>500V) and wide temperature(-263℃-+400℃) operation
H. Kawarada
Japan-France Joint Diamond Workshop 2014 (Oita Japan)
Presentation date: 2014.10
Characterization of Termination-controlled Boron-doped Polycrystalline Diamond Electrolyte-solution-gate Field-effect Transistor pH Sensor
Y. Shintani, T. Saruya, H. Kawarada
65th Annual Meeting of the International Society of Electrochemistry (Lausanne, Swiss)
Presentation date: 2014.08
Superconductivity of Heavily Boron-doped Diamond (111) by Spherical-resonator-Micro-wave-Plasma CVD
T. Kageura, M. Koga, T. Yamaguchi, Y. Takano, H. Kawarada
IUMRS-ICA2014, International Union of Materials Research Societies, International Conference in Asia 2014(The 15th IUMRS-ICA) (Fukuoka,Japan)
Presentation date: 2014.08
Fluorine-terminated thin boron-doped diamond Solution Gate FET
M. Kobayashi, Y. Shintani, M. Myodo, H. Kawarada
IUMRS-ICA2014, International Union of Materials Research Societies, International Conference in Asia 2014(The 15th IUMRS-ICA) (Fukuoka,Japan)
Presentation date: 2014.08
Wide Temperature (10-673 K) Operation of C-H Diamond MOSFETs
D. Xu, H. Tsuboi, T. Naruo, T. Yamada, A. Daicho, T. Saito, K. Kuruma, A. Hiraiwa, H. Kawarada
IUMRS-ICA2014, International Union of Materials Research Societies, International Conference in Asia 2014(The 15th IUMRS-ICA ) (Fukuoka,Japan)
Presentation date: 2014.08
600 V Breakdown voltage of C-H diamond MOSFETs with thick Al2O3 gate insulator
T.Yamada, T.Naruo, H.Tsuboi, D.Xu, A.Daicho, T.Saito, K.Kuruma, A.Hiraiwa, H.Kawarada
IUMRS-ICA2014, International Union of Materials Research Societies, International Conference in Asia 2014(The 15th IUMRS-ICA) (Fukuoka,Japan)
Presentation date: 2014.08
Surface structure of (111) diamond with recovered surface conduction after heat
Y. Seshimo, T. Hakamata, W. Ono, Y. Yokoyama, D. Utsunomiya, A. Hiraiwa, H.Kawarada
IUMRS-ICA2014, International Union of Materials Research Societies, International Conference in Asia 2014(The 15th IUMRS-ICA ) (Fukuoka,Japan)
Presentation date: 2014.08
In-plane conductivity of dense carbon nanotube forest formed by silicon carbide surface decomposition method
M. Inaba, C.-Yu Lee, K. Suzuki, M. Shibuya, M.Myodo, A. Hiraiwa, W. Norimatsu, M. Kusunoki, H.Kawarada
IUMRS-ICA2014, International Union of Materials Research Societies, International Conference in Asia 2014(The 15th IUMRS-ICA ) (Fukuoka,Japan)
Presentation date: 2014.08
Evaluation of the contact resistivity and Schottky barrier height at CNT/SiC interface by top contact electrode
K. Suzuki, M. Inaba, M. Shibuya, C.-Yu Lee, M. Myodo, A. Hiraiwa, W. Norimatsu, M. Kusunoki, H.Kawarada
IUMRS-ICA2014, International Union of Materials Research Societies, International Conference in Asia 2014(The 15th IUMRS-ICA) (Fukuoka,Japan)
Presentation date: 2014.08
Diamond Field Effect Transistors for Power Electronics
H. Kawarada [Invited]
2014 International Symposium on Single Crystal Diamond Electronics and the Fourth Chinese Vacuum Forum(SCDE 2014) (Xian, China)
Presentation date: 2014.06
In-plane Conduction of Dense Carbon Nanotube Forest Formed on Silicon Carbide
M. Inaba, C.-Y. Lee, K. Suzuki, M. Shibuya, M. Myodo, A. Hiraiwa, W. Norimatsu, M. Kusunoki, H. Kawarada
NT14: The Fifteenth International Conference on the Science and Application of Nanotubes (Los Angeles, CA, USA)
Presentation date: 2014.06
CNT/SiC Interface for Power Device Applications
M. Inaba, K. Suzuki, M. Shibuya, C.-Y. Lee, M. Myodo, A. Hiraiwa, Y. Masuda, W. Norimatsu, M. Kusunoki, H. Kawarada
The 5th NIMS/MANA-Waseda University International Symposium (Tsukuba, Japan)
Presentation date: 2014.03
ダイヤモンド表面固定アプタマーによるトランジスタ型バイオセンサ
[Invited]
Presentation date: 2014.03
Thermal Stability of Diamond Surface C-H Bonds
T. Hakamata, Y. Seshimo, W. Ono, Y. Yokoyama, D. Utsunomiya, A. Hiraiwa, H. Kawarada
2013 MRS(Materials Research Society) Fall Meeting & Exhibit (Boston, MA, USA)
Presentation date: 2013.12
AlN Heteroepitaxial Growth on Diamond (111) 2x1 Reconstructed Surface by Molecular Beam Epitaxy (MBE)
T. Hakamata, W. Ono, Y. Yokoyama, D. Utsunomiya, Y. Seshimo, A. Hiraiwa, H. Kawarada
2013 MRS(Materials Research Society) Fall Meeting & Exhibit (Boston, MA, USA)
Presentation date: 2013.12
Revolutionarily enhanced dielectric strength of an ALD-Al2O3 film annealed at a high temperature
T. Saito, K. Kuruma, A. Daicho, A. Hiraiwa, H. Kawarada
2013 MRS(Materials Research Society) Fall Meeting & Exhibit (Boston, MA, USA)
Presentation date: 2013.12
The optimization of P-type transparent electrode using boron-doped nanodiamond
M. Koga, T. Kageura, K. Ishak, Y. Shintani, M. Hasegawa, A. Hiraiwa, H. Kawarada
2013 MRS(Materials Research Society) Fall Meeting & Exhibit (Boston, MA, USA)
Presentation date: 2013.12
Electrolyte surrounding-gate FET by mm-long and dense carbon nanotube forest sheet
M. Myodo, M. Inaba, M. Kobayashi, Y. Shintani, A. Hiraiwa, H. Kawarada
2013 MRS(Materials Research Society) Fall Meeting & Exhibit (Boston, MA, USA)
Presentation date: 2013.12
Anomalous Electric Conduction at Al-first AlN/Diamond Interface Formed by Molecular Beam Epitaxy
W. Ono, Y. Yokoyama, D. Utsunomiya, T. Hakamata, A. Hiraiwa, H.Kawarada
2013 MRS(Materials Research Society) Fall Meeting & Exhibit (Boston, MA, USA)
Presentation date: 2013.12
The dependence of contact resistivity at CNT/SiC interface on SiC doping concentration: CNT new application for SiC power devices
M. Shibuya, M. Inaba, K. Suzuki, Y. Masuda, A. Hiraiwa, M. Kusunoki, H. Kawarada
2013 MRS(Materials Research Society) Fall Meeting & Exhibit (Boston, MA, USA)
Presentation date: 2013.12
400°C operation and high breakdown characteristic of hydrogen-terminated diamond MOSFETs with Al2O3 passivation
H.Tsuboi, T.Naruo, A.Daicho, T.Saito, D.Xu, T.Yamada, K.Kuruma, A.Hiraiwa, H.Kawarada
2013 MRS(Materials Research Society) Fall Meeting & Exhibit (Boston, MA, USA)
Presentation date: 2013.12
Lateral Conductivity of CNT Film on High Resistance Sic Substrate
C.Y. Lee, M. Inaba, K Suzuki, M. Shibuya, A. Hiraiwa, M. Kusunoki, H. Kawarada
2013 MRS(Materials Research Society) Fall Meeting & Exhibit (Boston, MA, USA)
Presentation date: 2013.12
The I-V characteristics of a termination-controlled polycrystalline diamond field effect transistor pH sensor for using at harsh environment
Y. Shintani, M. Myodo, M. Kobayashi, S. Ibori, H. Kawarada
ECS 224th meeting (San Francisco, USA)
Presentation date: 2013.10
H-terminated Diamond Field Effect Transistors Operated at 400C
Hiroshi Kawarada [Invited]
2013 JSAP(Japan Society of Applied Physics )-MRS(Materials Research Society) Joint Symposia (Kyoto, Japan)
Presentation date: 2013.09
Evaluation of conduction at CNT/SiC interface of vertically aligned and high density CNT on SiC
M. Shibuya, M. Inaba, K. Suzuki, Y. Masuda, A. Hiraiwa, M. Kusunoki, H. Kawarada
2013 JSAP(Japan Society of Applied Physics )-MRS(Materials Research Society) Joint Symposia (Kyoto, Japan)
Presentation date: 2013.09
Fabrication of P-type transparent conducting films using by heavily boron-doped nano crystalline diamond
M. Koga, T. Kageura, Khairul. Ishak, Y. Shintani, M . Hasegawa, A.Hiraiwa, H. Kawarada
2013 JSAP(Japan Society of Applied Physics )-MRS(Materials Research Society) Joint Symposia (Kyoto, Japan)
Presentation date: 2013.09
High-electrical-insulation ALD-Al2O3 for creation and passivation of two-dimensional hole gas on H-terminated diamond surface
T. Saito, A. Daicho, A. Hiraiwa, H. Kawarada
2013 JSAP(Japan Society of Applied Physics )-MRS(Materials Research Society) Joint Symposia (Kyoto, Japan)
Presentation date: 2013.09
Electrolyte solutiongate FET by mm-long carbon nanotube forest sheet
M. Myodo, K. Oohara, M. Inaba, M. Kobayashi, Y. Shintani, A. Hiraiwa, H. Kawarada
2013 JSAP(Japan Society of Applied Physics )-MRS(Materials Research Society) Joint Symposia (Kyoto, Japan)
Presentation date: 2013.09
Electric Property of Al-first AlN/Diamond Interface Formed by Molecular Beam Epitaxy
W. Ono, Y. Yokoyama, R. Kanomota, D. Utsunomiya, T. Hakamata, A. Hiraiwa, H. Kawarada
2013 JSAP(Japan Society of Applied Physics )-MRS(Materials Research Society) Joint Symposia (Kyoto, Japan)
Presentation date: 2013.09
AlN heteroepitaxial growth on diamond (111) 2x1 reconstructed surface by molecular beam epitaxy (MBE)
T. Hakamata, Y. Yokoyama, W. Ono, D. Utsunomiya, A. Hiraiwa, H. Kawarada
2013 JSAP(Japan Society of Applied Physics )-MRS(Materials Research Society) Joint Symposia (Kyoto, Japan)
Presentation date: 2013.09
High-voltage environment-resistive gate insulator for diamond field-effect transistors with two-dimensional hole gas
A. Hiraiwa, T. Saito, A. Daicho, H. Tsuboi, T. Naruo, Y. Nozaki, H. Kawarada
International Conference on Diamond and Carbon Materials (Riva del Garda, Italy)
Presentation date: 2013.09
Surface conduction after molecular beam epitaxy of AlN on a 2x1 4clean (111) diamond surface
A. Hiraiwa, W. Ono, T. Hakamata, Y. Yokoyama, D. Utsunomiya, H. Kawarada
International Conference on Diamond and Carbon Materials (Riva del Garda, Ital)
Presentation date: 2013.09
400°C operation of hydrogen-terminated diamond MOSFETs with high temperature ALD Al2O3 for gate insulator and passivation
H.Tsuboi, T.Naruo, A.Daicho, T.Saito, A.Hiraiwa, H.Kawarada
International Conference on Diamond and Carbon Materials (Riva del Garda, Italy)
Presentation date: 2013.09
Evaluation of CNT forest/metal contact resistivity for LSI metallization application
M. Inaba, M. Shibuya, Y. Masuda, A. Hiraiwa, M. Kusunoki, H.Kawarada
International Conference on Diamond and Carbon Materials (Riva del Garda, Italy)
Presentation date: 2013.09
Diamond Solution-Gate Transistors for Protein Detection by DNA/RNA Aptamers
H. Kawarada [Invited]
The 6th International Conference on Sensors (AsiaSense 2013) (Melaka, Malaysia)
Presentation date: 2013.08
C-H bonded diamond MOS Field Effect Transistor for High Temperature and High Power Application
H. Kawarada [Invited]
1st French-Japanese Workshop on Diamond power devices (Chamonix, France)
Presentation date: 2013.06
High-reliability ALD-Al2O3 gate insulator for diamond 2DHG-FETs
A. Hiraiwa
1st French-Japanese Workshop on Diamond power devices (Chamonix, France)
Presentation date: 2013.06
Estimation of conduction at CNT/SiC interface of vertically aligned and high density CNT on SiC
M. Inaba, M. Shibuya, Y. Masuda, A. Hiraiwa, M. Kusunoki, H. Kawarada
NT13: The Fourteenth International Conference on the Science and Application of Nanotubes (Espoo, Finland)
Presentation date: 2013.06
Study of differential FET sensing utilizing termination-controlled diamond surfaces as pH-sensitive/pH-insensitive interfaces
Y. Shintani, M. Myodo, S. Ibori, H. Kawarada
New Diamond and Nanocarbon conference (NDNC2013) (Singapore)
Presentation date: 2013.05
CNT contact resistivity evaluation from nano size LSI via to power SiC device using conductive AFM
2012 IUMRS-International Conference on Electronic Materials
Presentation date: 2012.09
Atomic layer deposition of Al2O3 for passivating hydrogen-terminated diamond
A. Daicho, T. Saito, S. Sato, T. Kobayashi, R. Nomura, A. Hiraiwa, H.Kawarada
2012 IUMRS-International Conference on Electronic Materials
Presentation date: 2012.09
Evaluation for properties of superconducting diamond (111) thin film with Tc(offset) above 10K and its anisotropic effect due to the uniaxial strain
2012 Materials & Mechanisms of Superconductivity Conference
Presentation date: 2012.07
Electrical characteristic evaluation of SNS junction by heavlily and lightly Boron-doped diamonds
2012 Materials & Mechanisms of Superconductivity Conference
Presentation date: 2012.07
The Effects of Diamond FET-based RNA aptamer sensing for Real Sample HIV-1 Tat Protein detection
Biosensors 2012
Presentation date: 2012.05
Heavily Boron-doped DianlOnd and Its Application to Electron Device in Harsh Environment
NDNC2012
Presentation date: 2012.05
Formation of highly B-doped Source & Drain layer with TiC ohmic contact for H-terminated diamond MOSFETs
2009 International Conference on Solid State Devices and Materials
Presentation date: 2009.10
Formation of highly B-doped Source & Drain layer with TiC ohmic contact for H-terminated diamond MOSFETs
2009 International Conference on Solid State Devices and Materials
Presentation date: 2009.10
High hole current density in diamond MOSFETs fabricated on H-terminated IIa-type (111) diamond substrate
2009 International Conference on Solid State Devices and Materials
Presentation date: 2009.10
Electric characterization of carbon nanotubes grown at low temperature by remote plasma chemical vapor deposition for LSI interconnects
2009 International Conference on Solid State Devices and Materials
Presentation date: 2009.10
ソ-ス・ドレインにボロンド-プ層を選択成長させた(111)水素終端ダイヤモンドMOSFETsの電気特性評価
2009年秋季第70回応用物理学会学術講演会
Presentation date: 2009.09
水素終端Ⅱa(111)基板に作成したダイヤモンドMOSFETの高周波特性
2009年秋季第70回応用物理学会学術講演会
Presentation date: 2009.09
高密度カ-ボンナノチュ-ブの合成と電気二重層キャパシタ電極への応用
秋季第70回応用物理学会学術講演会
Presentation date: 2009.09
ダイヤモンド表面におけるアプタマ-を介した血小板由来成長因子(PDGF)検出
2009年秋季第70回応用物理学関係連合講演会
Presentation date: 2009.09
カルボキシル基修飾したダイヤモンド表面におけるSNPs検出
2009年秋季第70回応用物理学会学術講演会
Presentation date: 2009.09
高濃度ボロンド-プダイヤモンド単結晶薄膜の結晶構造とTcの膜厚依存性
日本物理学会2009年秋季大会
Presentation date: 2009.09
Cross-Sectional TEM Study and Film Thickness Dependence of Tc in Heavily Boron-Doped Superconducting Diamond
9th International Conference on Materials and Mechanisms of Superconductivity
Presentation date: 2009.09
Critical concentrations of superconductor to insulator transition in (111), (001) and (110) CVD boron-doped diamond
9th International Conference on Materials and Mechanisms of Superconductivity
Presentation date: 2009.09
Stacked SNS Josephson Junction with heavily B-doped CVD Diamond Superconducting thin film
9th International Conference on Material and Mechanisms of Superconductivity
Presentation date: 2009.09
高濃度ボロンド-プダイヤモンド超伝導:TCと結晶性の深さ方向分布との相関
2009年春季日本物理学会第64回年次大会
Presentation date: 2009.03
先端放電型リモ-トプラズマ低温 CVD 成長によるサブミクロンサイズ CNT ビアの電気特性評価
2009年春季日本物理学会第64回年次大会
Presentation date: 2009.03
表面修飾による水素終端ダイヤモンド表面のイオン感応性制御
2009年春季日本物理学会第64回年次大会
Presentation date: 2009.03
ダイヤモンド表面のカルボキシル基修飾による生体分子検出
2009年春季日本物理学会第64回年次大会
Presentation date: 2009.03
水素終端IIa(111)基板に作製したダイヤモンドMOSFETの特性評価
2009年春季第56回応用物理学会学術講演会
Presentation date: 2009.03
ボロンド-プ層を利用したボトムコンタクト型水素終端ダイヤモンドMOSFETs
2009年春季第56回応用物理学会学術講演会
Presentation date: 2009.03
モリブデン/ダイヤモンド界面のモリブデンカ-バイド薄層の超伝導特
2009年春季第56回応用物理学会学術講演会
Presentation date: 2009.03
高濃度ボロンド-プダイヤモンド超伝導薄膜のTcの膜厚依存性と断面TEM観察
2009年春季第56回応用物理学会学術講演会
Presentation date: 2009.03
フッ素終端化ダイヤモンドDNAセンサの表面解析
2009年春季第56回応用物理学会学術講演会
Presentation date: 2009.03
Controlled growth of single and double walled carbon nanotubes for densely packed electrodes and super capacitors
4th Vacuum and Surface Science conference of Asia and Australia
Presentation date: 2008.10
高濃度ボロンド-プダイヤモンド超伝導薄膜の選択エピタキシャル成長による微細構造作製
第22回ダイヤモンドシンポジウム
Presentation date: 2008.10
先端放電型リモ-トプラズマCVDによる多層CNT低温成長
第22回ダイヤモンドシンポジウム
Presentation date: 2008.10
高濃度ボロンド-プダイヤモンド薄膜における超伝導絶縁体転移の臨界濃度と面方位依存性
第22回ダイヤモンドシンポジウム
Presentation date: 2008.10
ダイヤモンド表面の負電荷制御によるRNA/DNA二本鎖の1塩基変異検出
第22回ダイヤモンドシンポジウム
Presentation date: 2008.10
フッ素終端化ダイヤモンド表面を用いた1塩基変異DNA検出
第22回ダイヤモンドシンポジウム
Presentation date: 2008.10
水素終端(001),(110),(111)ダイヤモンド表面におけるホ-ル蓄積層の伝導性評価
第22回ダイヤモンドシンポジウム
Presentation date: 2008.10
水素ラジカル照射による酸素終端ダイヤモンドFETsの伝導性発現
第22回ダイヤモンドシンポジウム
Presentation date: 2008.10
ダイヤモンド表面修飾のDNAセンシングへの影響評価
第22回ダイヤモンドシンポジウム
Presentation date: 2008.10
グラファイトアンテナを用いた先端放電型リモ-トプラズマCVD法による垂直配向カ-ボンナノチュ-ブの合成
第22回ダイヤモンドシンポジウム
Presentation date: 2008.10
Detection of hybridization affinity between RNA/DNA duplex on functionalized diamond surface
The 19th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, and Nitrides
Presentation date: 2008.09
Superconductivity in (111), (001) and (110) boron-doped CVD diamond films
The 19th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, and Nitrides
Presentation date: 2008.09
Surface orientation dependence of hole accumulation layer on H-terminated diamond
The 19th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, and Nitrides
Presentation date: 2008.09
Electrical characterization of carbon nanotubes formed at low temperatures for LSI interconnects
The 19th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, and Nitrides
Presentation date: 2008.09
Selective homoepitaxial growth of heavily boron-doped thin film diamond for FET application
The 19th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, and Nitrides
Presentation date: 2008.09
Growth of well-aligned highly dense CNTs by highly dense catalyst particles
The 19th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, and Nitrides
Presentation date: 2008.09
高濃度ボロンド-プダイヤモンド薄膜の選択エピタキシャル成長
秋季第69回応用物理学会学術講演会
Presentation date: 2008.09
DNAセンシングに適したダイヤモンド表面のイオン感応性評価
2008年秋季第69回応用物理学会学術講演会
Presentation date: 2008.09
サブミクロンサイズビアからの多層CNT低温成長
2008年秋季第69回応用物理学会学術講演会
Presentation date: 2008.09
高濃度ボロンド-プダイヤモンド薄膜における超伝導絶縁体転移の臨界濃度の評価
2008年秋季第69回応用物理学会学術講演会
Presentation date: 2008.09
フッ素終端化ダイヤモンド表面のDNA Hybridizationへの影響
2008年秋季第69回応用物理学会学術講演会
Presentation date: 2008.09
水素終端(110)面を利用したダイヤモンドp-MOSFETの特性評価
2008年秋季第69回応用物理学会学術講演会
Presentation date: 2008.09
ダイヤモンド表面のCOO-制御によるRNA probeを用いた生体分子検出
2008年秋季第69回応用物理学会学術講演会
Presentation date: 2008.09
接触抵抗低減による極低温でのダイヤモンドFETの特性改善
2008年秋季第69回応用物理学会学術講演会
Presentation date: 2008.09
ボロンド-プダイヤモンド超薄膜の超伝導特性評価
日本物理学会2008年秋季大会
Presentation date: 2008.09
(111),(001),(110)高濃度ボロンド-プダイヤモンド薄膜の超伝導絶縁体転移の臨界濃度
日本物理学会2008年秋季大会
Presentation date: 2008.09
キャリアガスによるカ-ボンナノチュ-ブの層数制御
第35回フラ-レン・ナノチュ-ブ総合シンポジウム
Presentation date: 2008.08
Lattice expansion and superconductivity in heavily boron-doped diamond thin film
IWSDRM2008(International Workshop on Superconductivity in Diamond and Related Materials)
Presentation date: 2008.07
The relationship between Hall coefficient factor and superconductivity of heavily boron doped diamond(Invited)
IWSDRM2008(International Workshop on Superconductivity in Diamond and Related Materials)
Presentation date: 2008.07
Mechanism Analysis of Interrupted Growth of Single-Walled Carbon Nanotube Arrays
9th International Conference on the Science and Application of Nanotubes
Presentation date: 2008.07
Low temperature growth of carbon nanotubes by remote plasma CVD for future ULSI interconnects
9th International Conference on the Science and Application of Nanotubes
Presentation date: 2008.07
Low temperature grown carbon nanotube interconnects for LSI application
2nd International Conference on New Diamond and Nano Carbons
Presentation date: 2008.05
On the Mechanism of DNA and RNA Precise Sensing using Diamond Devices(Invited)
2nd conference on New Diamond & Nano Carbons
Presentation date: 2008.05
配線応用のための垂直配向カ-ボンナノチュ-ブの合成温度の低温化
2008年春季第55回応用物理学会学術講演会
Presentation date: 2008.05
Low temperature growth and LSI application of carbon nanotubes (Invited)
The 4th International Nanotechnology Conference on Communications and Cooperation, Nanotech in Japan
Presentation date: 2008.04
Detection of Single-mismatched Oligonucleotides on Partially Functionalized Diamond
2008 MRS Spring Meeting
Presentation date: 2008.03
高濃度ボロンド-プダイヤモンド超伝導体における結晶格子の伸張
2008年春季日本物理学会第63回年次大会
Presentation date: 2008.03
化学機械研磨により内層を利用した低温成長CNTビアの抵抗値の低減
第33回フラ-レン・ナノチュ-ブ総合シンポジウム
Presentation date: 2008.03
Growth of super-long straight CNTs by highly dense catalyst particles
第33回フラ-レン・ナノチュ-ブ総合シンポジウム
Presentation date: 2008.03
高濃度ボロンド-プCVDダイヤモンドの結晶格子伸張
2008年春季第55回応用物理学関係連合講演会
Presentation date: 2008.03
ダイヤモンド表面上における1塩基ミスマッチを持ったRNAの検出
2008年春季第55回応用物理学会学術講演会
Presentation date: 2008.03
高密度触媒微粒子によって成長した垂直長尺カ-ボンナノチュ-ブ
2008年春季第55回応用物理学会学術講演会
Presentation date: 2008.03
ボロンド-プダイヤモンドの薄膜成長とその電気特性評価
2008年春季第55回応用物理学会学術講演会
Presentation date: 2008.03
High-Performance p-channel Diamond MOSFETs with Alumina Gate Insulator
2007 IEEE International Electron Devices Meeting
Presentation date: 2007.12
ダイヤモンド表面を用いた1塩基ミスマッチの検出
第30会日本分子生物学会年会第80回日本生化学会大会合同大会
Presentation date: 2007.12
高濃度ボロンド-プCVDダイヤモンド超伝導体における結晶格子の伸張
2007年応用物理学会結晶工学分科会年末講演会
Presentation date: 2007.12
Cutting of Layered Single-Walled Carbon Nanotubes: Investigation of Interface Structure and Fabrication of Short Single-walled Carbon Nanotube Arrays
2007 MRS Fall Meeting
Presentation date: 2007.11
Conductivity Characteristic and BCS pairing in Superconductive Diamond Films
2007 MRS Fall Meeting
Presentation date: 2007.11
Growth of Half-Centimeter Long Single- and Double-Walled Carbon Nanotubes by Radical CVD
Fifth International Symposium on Control of Semiconductor Interfaces
Presentation date: 2007.11
Bias Dependence of RF Performance and Small-signal Equivalent Circuit in Diamond MISFETs
Fifth International Symposium on Control of Semiconductor Interfaces
Presentation date: 2007.11
Surface, Interface and Doping Science of Diamond and FET Applications
Fifth International Symposium on Control of Semiconductor Interfaces
Presentation date: 2007.11
ボロンド-プ超薄膜の超伝導特性評価
第21回ダイヤモンドシンポジウム
Presentation date: 2007.11
表面修飾されたダイヤモンド表面上におけるRNAの検出
第21回ダイヤモンドシンポジウム
Presentation date: 2007.11
長寿命触媒微粒子による長尺カ-ボンナノチュ-ブ成長
第21回ダイヤモンドシンポジウム
Presentation date: 2007.11
配線応用に向けた低温成長CNTビアの電気特性評価
第21回ダイヤモンドシンポジウム
Presentation date: 2007.11
超伝導転移を示す高濃度ボロンド-プCVDダイヤモンドの異方的な結晶格子伸張
第21回ダイヤモンドシンポジウム
Presentation date: 2007.11
LNAを用いたSGFETによるDNA検出
第21回ダイヤモンドシンポジウム
Presentation date: 2007.11
集束イオンビ-ムにより打ち込まれたNi触媒からのCNT成長
第21回ダイヤモンドシンポジウム
Presentation date: 2007.11
高濃度Bド-プダイヤモンドの選択エピタキシャル成長とその電気特性評価
第21回ダイヤモンドシンポジウム,
Presentation date: 2007.11
Diamond MISFETs Fabricated on Polycrystalline CVD Diamond
The 34th International Symposium on Compound Semiconductors
Presentation date: 2007.10
DC and RF Performance of Diamond MISFETs with Alumina Gate Insulator
International Conference on Silicon Carbide and Related Materials
Presentation date: 2007.10
Diamond for high frequency devices, DNA sensors and superconductor
早稲田大学創立125周年シンポジウム・早稲田大学理工学部創設100周年記念シンポジウム
Presentation date: 2007.10
The effect of Al layer on Fe catalyst for Carbon Nanotube Synthesis
18th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, and Nitrides
Presentation date: 2007.09
Expansion of crystalline lattice in heavily B-doped CVD diamond superconductivity
18th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, and Nitrides
Presentation date: 2007.09
Electrical properties of vertically-aligned carbon nanotubes grown in via-holes at low temperatures for future interconnects
18th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, and Nitrides
Presentation date: 2007.09
Evaluation of channel mobility for diamond MISFETs from gate-to-channel capacitance measurement
18th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, and Nitrides
Presentation date: 2007.09
Detection of mismatched DNA on functionalized diamond surface by controlling surface charge
18th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, and Nitrides
Presentation date: 2007.09
Fabrication of H-terminated diamond MISFETs utilizing TiC ohmic layer
18th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, and Nitrides
Presentation date: 2007.09
Effect of Interface on the Superconductivity of Boron Doped Diamond Thin film
18th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, and Nitrides
Presentation date: 2007.09
Vertically aligned carbon nanotubes from Ni catalysts implanted by focused-ion-beam
18th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, and Nitrides
Presentation date: 2007.09
Electrical properties of carbon nanotubes grown at a low temperature by radical chemical vapor deposition for future LSI interconnects
2007 International Conference on Solid State Devices and Materials
Presentation date: 2007.09
集束イオンビ-ムによる打ち込みNi触媒からのCNT成長(Ⅱ)
2007年秋季第68回応用物理学会学術講演会
Presentation date: 2007.09
表面修飾されたダイヤモンド表面上におけるRNAの検出
2007年秋季第68回応用物理学会学術講演会
Presentation date: 2007.09
化学機械研磨により平坦化したCNTビアの電気特性評価
2007年秋季第68回応用物理学会学術講演会
Presentation date: 2007.09
ダイヤモンドFETソ-ス・ドレイン領域のための高濃度B-doped 選択エピタキシャル成長とその電気特性評価
2007年秋季第68回応用物理学会学術講演会
Presentation date: 2007.09
ダイヤモンドの表面電荷の調節による1塩基多型DNAの検出
2007年秋季第68回応用物理学会学術講演会
Presentation date: 2007.09
(100),(111)高濃度ボロンド-プCVDダイヤモンドにおける異方的な結晶格子伸張
2007年秋季第68回応用物理学会学術講演会
Presentation date: 2007.09
Transistor Type DNA Sensor for SNPs Detection Using Diamond Surface
Nanoscience and Nanotechnology for Biological/Biomedical/Chemical Sensing
Presentation date: 2007.06
Detection of single-mismatch oligonucleotides on functionalized diamond surface by optical and electrochemical methods
5th Joint Meeting on Medical Chemistry
Presentation date: 2007.06
DC and RF characterization of 0.1µm gate length Diamond MISFETs fabricated on polycrystalline diamond
New Diamond and Nano Carbons 2007
Presentation date: 2007.05
Diamond MISFETs fabricated on high quality polycrystalline CVD diamond(K. Hirama, H. Takayanagi, S. Yamauchi, Y. Jingu, H. Umezawa, H. Kawarada)
International Symposium on Power Semiconductor Devices & ICs(19th)
Presentation date: 2007.05
Diamond MISFETs fabricated on high quality polycrystalline CVD diamond
19th International Symposium on Power Semiconductor Devices & ICs
Presentation date: 2007.05
Synthesis of Carbon Nanotubes from Focused Ion Beam Implanted Ni Catalysts
1st International Conference on New Diamond and Nano Carbons
Presentation date: 2007.05
Low plasma damage hydrogen-termination process by antenna-edge-plasma
New Diamond and Nano Carbons 2007
Presentation date: 2007.05
DC and RF characterization of 0.1µm gate length Diamond MISFETs fabricated on polycrystalline diamond
New Diamond and Nano Carbons 2007
Presentation date: 2007.05
A new type DNA immobilization using modified diamond surface and its application for SNPs detection
NDNC 2007
Presentation date: 2007.05
Low Temperature Radical Chemical Vapor Deposition of Vertically Aligned CNTs using Size-classified Co Particles for LSI Multi-layer Interconnects
1st International Conference on New Diamond and Nano Carbons
Presentation date: 2007.04
CO<SUB>2</SUB>を用いた先端放電型ラジカルCVDによるカーボンナノチューブ合成(Ⅱ)(真木 翼, 岩崎 孝之, 吉田 剛, 相川 拓海, 野末 竜弘, 近藤 大雄, 川端 章夫, 佐藤 信太郎, 二瓶 端久, 粟野 祐二, 川原田 洋)
応用物理学会学術講演会(春季第54回)
Presentation date: 2007.03
低抵抗多結晶ダイヤモンド基板上に作製したダイヤモンドMISFETの特性評価(平間 一行, 高柳 英典, 山内 真太郎, 神宮 宜克, 梅沢 仁, 川原田 洋)
応用物理学会学術講演会(春季第54回)
Presentation date: 2007.03
フッ素系高分子膜による水素終端ダイヤモンドの伝導性の上昇(福本 亘, 田中 雅也, 與原 圭一朗, 山内 真太郎,平間 一行, 川原田 洋)
応用物理学会学術講演会(春季第54回)
Presentation date: 2007.03
超伝導転移を示す高濃度ボロンドープCVDダイヤモンドにおける結晶格子の伸張(入山 慎吾, 竹之内 智大, 石綿 整, 岡田 竜介, 立木 実, 高野 義彦, 石井 明, 石井 聡, 川原田 洋)
応用物理学会学術講演会(春季第54回)
Presentation date: 2007.03
Ti/Pt/Au ohmic電極形成と水素ラジカル照射法を利用した水素終端ダイヤモンドMISFETの作製・評価(神宮 宜克, 小柴 亨, 平間 一行, 岩崎 孝之, 梅沢 仁, 川原田 洋)
応用物理学会学術講演会(春季第54回)
Presentation date: 2007.03
CO2を用いた先端放電型ラジカルCVDによるカーボンナノチューブ合成(Ⅱ)(真木 翼, 岩崎 孝之, 吉田 剛, 相川 拓海, 野末 竜弘, 近藤 大雄, 川端 章夫, 佐藤 信太郎, 二瓶 端久, 粟野 祐二, 川原田 洋)
応用物理学会学術講演会(春季第54回)
Presentation date: 2007.03
ダイヤモンドの表面電荷の調節によるDNA 塩基ミスマッチの検出(久我 翔馬, 梁 正勲, 高橋 宏徳, 宋 光燮, 川原田 洋)
応用物理学会学術講演会(春季第54回)
Presentation date: 2007.03
集束イオンビームによる打ち込みNi触媒からのCNT成長(岩崎 孝之, 小出 敬, 森金 亮太, 目島 壮一, 中山 英樹, 品田 賢宏, 大泊 巌, 川原田 洋)
応用物理学会学術講演会(春季第54回)
Presentation date: 2007.03
ボロンドープダイヤモンド超伝導への表面終端及び界面の影響(岡田 竜介, 石綿 整, 竹之内 智大, 入山 慎吾, 立木 実, 高野 義彦, 石井 聡, 奥津 貴史, 上田 真也, 川原田 洋)
応用物理学会学術講演会(春季第54回)
Presentation date: 2007.03
配線応用へ向けたビア構造からのカーボンナノチューブの低温ラジカルCVD 成長(横山 大輔, 岩崎 孝之, 吉田 剛, 佐藤 信太郎, 二瓶 瑞久, 粟野 祐二, 川原田 洋)
応用物理学会学術講演会(春季第54回)
Presentation date: 2007.03
長尺カーボンナノチューブ合成のための先端放電型ラジカルCVD条件最適化とCO2の効果(岩崎 孝之, 真木 翼, 吉田 剛, 相川 拓海, 野末 竜弘, 近藤 大雄, 川端 章夫, 佐藤 信太郎, 二瓶 瑞久, 粟野 祐二, 川原田 洋)
フラーレン・ナノチューブ総合シンポジウム(第32回)
Presentation date: 2007.02
Co触媒微粒子を用いた先端放電型ラジカルCVDによるCNT低温合成-LSI配線応用に向けて(横山 大輔, 岩崎 孝之, 吉田 剛, 佐藤 信太郎, 二瓶 瑞久, 粟野 祐二, 川原田 洋)
フラーレン・ナノチューブ総合シンポジウム(第32回)
Presentation date: 2007.02
負電荷保持薄膜のパッシベーションによるダイヤモンドFET特性の改善(福本 亘, 田中 雅也, 平間 一行, 山内 真太郎, 川原田 洋)
ダイヤモンドシンポジウム(第20回)
Presentation date: 2006.11
高濃度ボロンドープCVDダイヤモンド超伝導体における合成条件とTcの関係(入山 慎吾, 竹之内 智大, 石綿 整, 岡田 竜介, 立木 実, 高野 義彦, 石井 聡, 石坂 香子,馬場 輝久, 川原田 洋)
ダイヤモンドシンポジウム(第20回)
Presentation date: 2006.11
Ti/Pt/Auオーミック電極を用いた水素終端ダイヤモンドMISFETの作製と評価(神宮 宜克, 小柴 亨, 高柳 英典, 山内 真太郎, 興原 圭一郎, 平間 一行, 岩崎 孝之, 川原田 洋)
ダイヤモンドシンポジウム(第20回)
Presentation date: 2006.11
長尺カーボンナノチューブ合成のための先端放電型ラジカルCVD条件最適化(真木 翼, 岩崎 孝之, 相川 拓海, 川原田 洋)
ダイヤモンドシンポジウム(第20回)
Presentation date: 2006.11
部分的酸素終端表面を用いたSGFET-DNAセンサによる塩基ミスマッチ検出(久我 翔馬, 梁 正勲, 宋 光燮, 川原田 洋)
ダイヤモンドシンポジウム(第20回)
Presentation date: 2006.11
ダイヤモンド超伝導への表面・界面の影響(岡田 竜介, 石綿 整, 竹之内 智大, 入山 慎吾, 立木 実, 高野 義彦, 石井 聡, 興津 貴史,上田 真也, 川原田 洋)
ダイヤモンドシンポジウム(第20回)
Presentation date: 2006.11
Co触媒微粒子を用いた先端放電型ラジカルCVDによるCNTの低温合成(横山 大輔, 岩崎 孝之, 吉田 剛, 佐藤 信太郎, 二瓶 瑞久, 粟野 祐二, 川原田 洋)
ダイヤモンドシンポジウム(第20回)
Presentation date: 2006.11
Synthesis of Very Dense and Vertically Aligned Single-walled Carbon Nanotubes by Radical CVD(T. Yoshida, T. Iwasaki, H. Kawarada)
2006 MRS Fall Meeting
Presentation date: 2006.11
Characterization of direct immobilization on functionalized diamond Solution-Gate Field-Effect Transistors for detecting single-mismatch oligonucleotides(J. H. Yang, K. S. Song, S. Kuga, H. Kawarada)
2006 MRS Fall Meeting
Presentation date: 2006.11
Detection of DNA Hybridization by Diamond Solution Gate Field Effect Transistors - A New Type of DNA Sensor Based on Charge Detection(H. Kawarada, K. S. Song, J. H. Yang)
2006 MRS Fall Meeting
Presentation date: 2006.11
Superconductivity from highly boron-doped diamonds(H. Kawarada, Y. Takano, Y. Yokoya)
International Symposium on Super conductivity(19th)
Presentation date: 2006.10
Immobilization of streptavidin using biotin-avidin interaction on the diamond surface(T. Ohki, K. S. Song, G.. J. Zhang, J. H. Yang, I. Ohdomari, H. Kawarada)
European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, and Nitrides(17th)
Presentation date: 2006.09
Fabrication and Application of low resistive layer by ion irradiation into diamond(T. Koide, T. Arai, S. Mejima, K. Hirama, K. S. Song, D. Ferrer, T. Shinada, I. Ohdomari, H. Kawarada)
European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, and Nitrides(17th)
Presentation date: 2006.09
Evaluation of effective carrier mobility of two-dimensional accumulation layer on Diamond FET(S. Yamauchi, K. Hirama, T. Koshiba, K. Yohara, H. Takayanagi, H. Kawarada)
European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, and Nitrides(17th)
Presentation date: 2006.09
Growth of single-walled carbon nanotubes in nano-sized via holes for interconnects(R. Morikane, T. Iwasaki, G. Zhong, T. Edura, K. Tsutsui, Y. Wada, H. Kawarada)
European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, and Nitrides(17th)
Presentation date: 2006.09
Control of two-dimensional hole gas layer through charged membranes on the hydrogen-terminated diamond surface(M. Tanaka, D.Ogiwara, Y. Sasaki, K.Hirama, K. S. Song, H. Kawarada)
European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, and Nitrides(17th)
Presentation date: 2006.09
Microwave analysis of 30GHz cut-off frequency diamond MISFETs(K. Hirama, T. Koshiba, H. Takayanagi, K.Yohara, S.Yamauchi, H. Kawarada)
European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, and Nitrides(17th)
Presentation date: 2006.09
The detection of base pair mismatched DNA using diamond field-effect transistors (FETs)(H. Takahashi, K. Furukawa , K. S. Song, G.. J. Zhang, J. H. Yang, I. Ohdomari, H. Kawarada)
European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, and Nitrides(17th)
Presentation date: 2006.09
Change of conductivity characteristic in heavily boron-doped diamond films(H. Ishiwata, S. Koizumi, T. Takenouchi, Y. Takano, M. Nagao, T. Hatano, H. Kawarada)
European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, and Nitrides(17th)
Presentation date: 2006.09
負電荷保持薄膜のパッシベーションによるダイヤモンドFET特性の改善(福本 亘, 與原 圭一朗, 田中 雅也,平間 一行, 川原田 洋)
応用物理学会学術講演会(秋季第67回)
Presentation date: 2006.08
高濃度ボロンドープCVDダイヤモンド超伝導体における合成条件とTcの関係(入山 慎吾, 竹之内 智大, 石綿 整, 岡田 竜介, 立木 実, 高野 義彦, 石井 聡, 奥津 貴史, 上田 真也, 川原田 洋)
応用物理学会学術講演会(秋季第67回)
Presentation date: 2006.08
水素終端ダイヤモンドP型表面蓄積層におけるO2-イオンの影響(田中 雅也, 大木 貴史, 平間 一行, 宋 光燮, 川原田 洋)
応用物理学会学術講演会(秋季第67回)
Presentation date: 2006.08
カルモジュリンを用いたダイヤモンド電解質ゲートFET によるCa2+の検出(大木 貴史, 出川 宗里, 本橋 秀樹, 宋 光燮, 川原田 洋)
応用物理学会学術講演会(秋季第67回)
Presentation date: 2006.08
先端放電型プラズマによるダイヤモンド正孔蓄積層の低温回復(神宮 宜克, 小柴 亨, 高柳 英典, 山内 真太郎, 與原 圭一郎, 平間 一行, 岩崎 孝之, 川原田 洋)
応用物理学会学術講演会(秋季第67回)
Presentation date: 2006.08
CO2を用いた先端放電型マイクロ波プラズマCVDによるカーボンナノチューブ合成(真木 翼, 岩崎 孝之, 相川 拓海, 川原田 洋)
応用物理学会学術講演会(秋季第67回)
Presentation date: 2006.08
収束イオンビームによるBイオンダイヤモンドの半導体特性(小出 敬, 目島 壮一, 平間 一行, 坪内 信輝,小倉 政彦,茶谷原 昭義,鹿田 真一, 品田 賢宏, 大泊 巌, 川原田 洋)
応用物理学会学術講演会(秋季第67回)
Presentation date: 2006.08
表面修飾を用いたSGFET-DNAセンサの特性(久我 翔馬, 梁 正勲, 高橋 宏徳, 宋 光燮, 川原田 洋)
応用物理学会学術講演会(秋季第67回)
Presentation date: 2006.08
MISFET構造を用いたダイヤモンド2次元正孔ガスの低温特性評価(岡田 竜介, 石綿 整, 竹之内 智大, 入山 慎吾, 立木 実, 高野 義彦, 石井 聡, 奥津 貴史, 上田 真也, 川原田 洋)
応用物理学会学術講演会(秋季第67回)
Presentation date: 2006.08
LSI多層配線応用のための先端放電型ラジカルCVDによる垂直配向CNTの低温合成(横山 大輔, 岩崎 孝之, 吉田 剛, 佐藤 信太郎, 二瓶 瑞久, 粟野 祐二, 川原田 洋)
応用物理学会学術講演会(秋季第67回)
Presentation date: 2006.08
RF power evaluation of diamond MISFETs using load pull measurement(K. Hirama, S. Yamauchi, H. Takayanagi, K. Yohara, T. Koshiba, M. Satoh and H. Kawarada)
電子材料シンポジウム(第25回)
Presentation date: 2006.07
Enhanced Growth of Millimeter Long Vertically Aligned Single-Walled Carbon Nanotubes by Edge Growth(T. Iwasaki, G. Zhong, H. Kawarada)
Nanotube 2006
Presentation date: 2006.06
RF diamond MISFETs using surface accumulation layer(K. Hirama, T. Koshiba, K. Yohara, H. Takayanagi, M. Satoh, H. Kawarada)
International Symposium on Power Semiconductor Devices And ICs(18th)
Presentation date: 2006.06
RF power characteristics of diamond MISFETs utilizing hole accumulation layer(K.Hirama, S.Yamauchi, M.Satoh, H. Kawarada)
joint International Conference on New Diamond Science and Technology and the Applied Diamond Conference
Presentation date: 2006.05
Highly sensitive label-free DNA diamond FET biosensor based on the negative charge of DNA(K. S. Song, T. Hiraki, K. Furukawa, J. H. Yang, H. Kawarada)
The joint International Conference on New Diamond Science and Technology and the Applied Diamond Conference
Presentation date: 2006.05
Detection of the label-free target oligonucleotides on diamond SGFETs by using direct amination and CAC(J. H. Yang, K. S. Song, G. J. Zhang, S. Yoshinori, I. Ohdomari, H. Kawarada)
The joint International Conference on New Diamond Science and Technology and the Applied Diamond Conference
Presentation date: 2006.05
Dense hole accumulation induced by O2- ions on hydrogen-terminated diamond surface: A new model for subsurface conductivity(H. Kawarada, D. Ogiwara, M. Tanaka, Y. Sasaki, K. Hirama and K. S. Song)
The joint International Conference on New Diamond Science and Technology and the Applied Diamond Conference
Presentation date: 2006.05
Millimeter Long Vertically Aligned Single-Walled Carbon Nanotubes by an ultra long lifetime of catalysts(T. Iwasaki, G. Zhong, T. Yoshida, T. Aikawa, R. Morikane, H. Kawarada)
NSTI Nanotech 2006
Presentation date: 2006.05
Electric-field assisted DNA sensors using diamond FETs(K. S. Song, T. Hiraki, K. Furukawa, J. H. Yang, H. Kawarada)
BIOSENSORS 2006
Presentation date: 2006.05
Characterization of controlled hybridization kinetics on diamond field effect transistor for detecting label-free oligonucleotides(J. H. Yang, K. S. Song, Y. Sasaki. H. Kawarada)
BIOSENSORS 2006
Presentation date: 2006.05
ハイブリダイゼーション速度調節によるSGFET−DNAセンサの特性(梁 正勲, 宋 光燮, 佐々木 順紀, 古川 慧, 平木 貴博, 高橋 宏徳, 川原田 洋)
応用物理学会学術講演会(第53回)
Presentation date: 2006.03
ホール蓄積層を用いたダイヤモンドMISFETのパワー特性(平間 一行, 山内 真太郎, 佐藤 允也, 川原田 洋)
応用物理学会学術講演会(第53回)
Presentation date: 2006.03
濃度10%のボロンドープダイヤモンドの電気特性(石綿 整, 小泉 聡, 手塚 真一郎, 竹之内 智大, 高野 義彦, 長尾 雅則, 坂口 勲, 羽多野 毅, 川原田 洋)
応用物理学会学術講演会(第53回)
Presentation date: 2006.03
配線応用へ向けたナノサイズビア構造からの単層カーボンナノチューブ成長(森金 亮太, 岩崎 孝之, 鍾 国倣, 江面 知彦, 筒井 謙, 和田 恭雄, 川原田 洋)
応用物理学会学術講演会(第53回)
Presentation date: 2006.03
ダイヤモンドへのイオン照射による 局所低抵抗層の形成とその応用(小出 敬, 新井 達也, 目島 壮一, 平間 一行, 宋 光燮, ドミンゴ フェレール, 品田 賢宏, 大泊 巌, 川原田 洋)
応用物理学会学術講演会(第53回)
Presentation date: 2006.03
高濃度ボロンドープCVDダイヤモンド超伝導体におけるJc評価②(手塚 真一郎, 石綿 整, 竹之内 智大, 高野 義彦, 長尾 雅則, 坂口 勲, 立木 実, 羽多野 毅, 川原田 洋)
応用物理学会学術講演会(第53回)
Presentation date: 2006.03
SGFET-DNAセンサにおける電圧印加によるSNPs検出(高橋 宏徳, 古川 慧, 宋 光燮, 張 国軍, 梁 正勲, 大泊 巌, 川原田 洋)
応用物理学会学術講演会(第53回)
Presentation date: 2006.03
Detection of the label-free DNA on diamond SGFETs by direct amination and CAC(J. H. Yang, K. S. Song, G. J. Zhang, I. Ohdomari, H. Kawarada)
ACS National Meeting(231st)
Presentation date: 2006.03
高濃度ボロンドープCVDダイヤモンドにおけるキャリア密度の評価(石綿 整, 手塚 真一郎, 竹之内 智大, 高野 義彦, 長尾 雅則, 坂口 勳, 立木 実, 川原田 洋)
ニューダイヤモンドシンポジウム(第19回)
Presentation date: 2005.11
放電型マイクロ波プラズマCVD法による単層カーボンナノチューブの成長制御(森金 亮太, 岩崎 孝之, 鍾 国倣, 相川 拓海, 吉田 剛, 川原田 洋)
ニューダイヤモンドシンポジウム(第19回)
Presentation date: 2005.11
ダイヤモンド表面への重金属イオン照射による局所低抵抗層の形成とその応用(小出 敬, 新井 達也, 目島 壮一, 平間 一行, ドミンゴ フェレール, 宋 光燮, 品田 賢宏, 大泊 巌, 川原田 洋)
ニューダイヤモンドシンポジウム(第19回)
Presentation date: 2005.11
高濃度ボロンドープCVDダイヤモンド超伝導体におけるJc評価(手塚 真一郎, 石綿 整, 竹之内 智大, 高野 義彦, 長尾 雅則, 坂口 勲, 立木 実, 羽多野 毅, 川原田 洋)
ニューダイヤモンドシンポジウム(第19回)
Presentation date: 2005.11
ダイヤモンドSGFETのpH感応性と時間応答(坂本 琢磨, 佐々木 順紀, 大木 貴史, 出川 宗里, 平木 貴博, 梁 正勲, 宋 光燮, 川原田 洋)
ニューダイヤモンドシンポジウム(第19回)
Presentation date: 2005.11
ダイヤモンドSGFET-DNAセンサにおけるハイブリダイゼーション制御(高橋 宏徳, 古川 慧, 宋 光燮, 張 国軍, 梁 正勲, 大泊 巌, 川原田 洋)
ニューダイヤモンドシンポジウム(第19回)
Presentation date: 2005.11
DNA detection and biosensing application of diamond transistors(K. S. Song, M. Degawa, Y. Sasaki, K. Furukawa, T. Ohki, T. Hiraki, J. H. Yang, H.Kawarada)
2005 Symposium on Nanoscale Materials, Processes and Devices
Presentation date: 2005.11
A novel method of DNA immobilization on diamond by aromatic carboxylic compound(J. H. Yang, K. S. Song, G. J. Zhang, M. Degawa, Y. Sasaki, I. Ohdomari, H. Kawarada)
2005 Symposium on Nanoscale Materials, Processes and Devices
Presentation date: 2005.11
Diamond RF Transistors on H-Terminated Diamond Surface Channel(H. Umezawa, H. Hirama, T. Arai, H. Takayanagi, T. Koshiba, K. Yohara, S. Mejima, M. Satoh, H. Kawarada)
2005 Symposium on Nanoscale Materials, Processes and Devices
Presentation date: 2005.11
Detection of Ions and DNA Hybridization using Diamond Solution Gate FETs(H. Kawarada, K. Furukawa, Y. Sasaki, J. H. Yang, K. S. Song)
2005 Symposium on Nanoscale Materials, Processes and Devices
Presentation date: 2005.11
Diamond FET biosensor to actualize the detection of SNP based its charge detection(K. S. Song, G. J. Zhang, K. Furukawa, T. Hiraki, Y. Sasaki, J. H. Yang, I. Ohdomari, H. Kawarada)
2005 MRS Fall Meeting
Presentation date: 2005.11
Diamond field-effect transistors (FETs) applying for the charge detection biosensors(K. S. Song, G. J. Zhang, K. Furukawa, T. Hiraki, Y. Sasaki, J.H. Yang, I. Ohdomari, H. Kawarada)
2005 Instrumental Methods of Analysis Modern Trends and Applications Crete
Presentation date: 2005.10
Synthesis of Millimeter Long Vertically Aligned Single-Walled Carbon Nanotubes by Point-Arc Microwave Plasma Cvd(T. Iwasaki, T. Yoshida, T. Aikawa, G. F. Zhong, I. Ohdomari, H. Kawarada)
2005 AIChE Annual Meeting
Presentation date: 2005.10
Detection of Ions and DNA Hybridization Using Diamond Solution Gate Fets(H. Kawarada, K. S. Song)
2005 AIChE Annual Meeting
Presentation date: 2005.10
Influence of Negative Adsorption on Hydrogen Terminated P-Type Diamond Surface(D. Ogiwara, M. Tanaka, Y. Sasaki, K. Hirama, K. S. Song, H. Umezawa, H. Kawarada)
2005 AIChE Annual Meeting
Presentation date: 2005.10
微細ダイヤモンド電解質溶液ゲートFETを用いた高感度DNAセンサ(平木 貴博, 宋 光燮, 張 国軍, 梁 正勲, 大泊 巌, 川原田 洋)
応用物理学会学術講演会(第66回)
Presentation date: 2005.09
高濃度ボロンドープCVD ホモエピタキシャルダイヤモンドの超伝導特性II(竹之内 智大, 手塚 真一郎, 石綿 整, 高野 義彦, 長尾 雅則, 坂口 勲, 立木 実, 羽多野 毅, Hoesch Moritz, 福田 竜生, 水木 純一郎, 川原田 洋)
応用物理学会学術講演会(秋季第66回)
Presentation date: 2005.09
表面修飾した超分散性ダイヤモンド(UDDs)の分散性評価(村上 泰規, 中野 善和, 梁 正勲, 宋 光燮, 張 国軍, 梅沢 仁, 川原田 洋)
応用物理学会学術講演会(第66回)
Presentation date: 2005.09
ダイヤモンドの気相合成-半導体から超電導まで(川原田 洋)
応用物理学会学術講演会(第66回)
Presentation date: 2005.09
高濃度ボロンドープCVD ダイヤモンドにおけるキャリア密度の評価(石綿 整, 手塚 真一郎, 竹之内 智大, 高野 義彦, 長尾 雅則, 坂口 勲, 立木 実, 羽多野 毅, 川原田 洋)
応用物理学会学術講演会(第66回)
Presentation date: 2005.09
高密度・垂直配向単層カーボンナノチューブの成長機構解明(森金 亮太, 岩崎 孝之, 鐘 国倣, 相川 拓海, 吉田 剛, 川原田 洋)
応用物理学会学術講演会(第66回)
Presentation date: 2005.09
昇温ダイヤモンド表面へのNiイオン照射による局所低抵抗領域の電気特性(小出 敬, 新井 達也, 目島 壮一, 宋 光燮, ドミンゴ フェレール, 品田 賢宏, 大泊 巌, 川原田 洋)
応用物理学会学術講演会(第66回)
Presentation date: 2005.09
高濃度ボロンドープCVDダイヤモンド超伝導体におけるJc評価構造の検討(手塚 真一郎, 石綿 整, 竹之内 智大, 高野 義彦, 長尾 雅則, 坂口 勲, 立木 実, 羽多野 毅, 川原田 洋)
応用物理学会学術講演会(第66回)
Presentation date: 2005.09
高周波ダイヤモンドMISFETにおけるホールキャリア速度の向上(山内 真太郎, 平間 一行, 小柴 亨, 与原 圭一朗, 高柳 英典, 佐藤 允也, 宋 光燮, 小倉 政彦, 齊藤 丈靖, 朴 慶浩, 藤森 直治, 川原田 洋)
応用物理学会学術講演会(第66回)
Presentation date: 2005.09
ダイヤモンドSGFETのpH感応性と時間応答(佐々木 順紀, 大木 貴史, 出川 宗里, 平木 貴博, 梁 正勲, 宋 光燮, 川原田 洋)
応用物理学会学術講演会(第66回)
Presentation date: 2005.09
ダイヤモンドSGFET-DNAセンサにおけるハイブリダイゼーション検出の温度依存特性(高橋 宏徳, 古川 慧, 宋 光燮, 張 国軍, 梁 正勲, 大泊 巌,川原田 洋)
応用物理学会学術講演会(第66回)
Presentation date: 2005.09
Fabrication of Low Resistive Layer in Diamond Surface by Ni Ion Irradiation at Low Doses using FIB(S. Mejima; T. Arai; K. Hirama; H. Umezawa; F. Domingo; T. Shinada; I. Ohdimari; H. Kawarada)
NT'L CONFERENCE ON SILICON CARBIDE AND RELATED MATERIALS 2005
Presentation date: 2005.09
Influences of B-Doped Layer under the Channel of H-Terminated DiamondFETs(T. Koshiba; K. Hirama; T. Saito; M. Ogura, M. Sato; H. Umezawa; K. H. Park; H. Kawarada)
INT'L CONFERENCE ON SILICON CARBIDE AND RELATED MATERIALS 2005
Presentation date: 2005.09
The Improvement of RF Performance for Diamond MISFETs with Miniaturization of Gate Length(H. Takayanagi, K. Hirama、 M. Satoh、 H. Kawarada)
INT'L CONFERENCE ON SILICON CARBIDE AND RELATED MATERIALS 2005
Presentation date: 2005.09
Drift and hysteresis characteristics on the pH sensitive diamond SGFET(Y. Sasaki, T. Ohki, K. S. Song, M. Degawa, H. Kawarada)
European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, Nitrides & Silicon Carbide(16th)
Presentation date: 2005.09
Dispersibility evaluation of ultra-dispersed diamonds(UDDs) immobilized biological molecules(Y. Murakami, Y. Nakano, G. J. Zhang, K. S. Song, H. Kawarada)
European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, Nitrides & Silicon Carbide(16th)
Presentation date: 2005.09
The miniaturized diamond electrolyte solution- gate FET (SGFET) to realize in vivo diagnostics of disease(T. Hiraki, K. S. Song, G. J. Zhang, J. H. Yang, I..Ohdomari, H. Kawarada)
European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, Nitrides & Silicon Carbide(16th)
Presentation date: 2005.09
How to achieve millimeter long vertically aligned single-walled carbon nanotubes by plasma assistant CVD?(T. Aikawa, T. Yoshida, T. Iwasaki, G. F. Zhong, H. Kawarada)
European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, Nitrides & Silicon Carbide(16th)
Presentation date: 2005.09
Development of diamond MISFETs with oxide gate insulator(K. Yohara, K. Hirama, M. Satoh, H. Umezawa, H. Kawarada)
European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, Nitrides & Silicon Carbide(16th)
Presentation date: 2005.09
Ultra sensitive label-free diamond DNA biosensor to detect its molecular negative charge(K. Furukawa, K. S. Song, G. J. Zhang, J. H. Yang, I. Ohdomari, H. Kawarada)
European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, Nitrides & Silicon Carbide(16th)
Presentation date: 2005.09
Controlled growth of single-walled carbon nanotubes by point-arc microwave plasma CVD(G. F. Zhong, T. Iwasaki, T. Yoshida, T. Aikawa, H, Kawarada)
European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, Nitrides & Silicon Carbide(16th)
Presentation date: 2005.09
Influence of negatively charged adsorbates on Hydrogen-terminated p-type diamond surface(D. Ogiwara, M. Tanaka, Y. Sasaki, K. Hirama, K..S. Song, H. Kawarada)
European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, Nitrides & Silicon Carbide(16th)
Presentation date: 2005.09
高密度・垂直配向単層カーボンナノチューブの成長機構解明(岩崎 孝之, 鍾 国倣, 相川 拓海, 吉田 剛, 川原田 洋)
フラーレン・ナノチューブ総合シンポジウム(第29回)
Presentation date: 2005.07
High Yield Selective Growth of Millimeter Long, Vertically Aligned Single-walled Carbon Nanotubes at Low Temperatures(G. Zhong, T. Iwasaki, I. Ohdomari, H. Kawarada)
International Conference on the Science and Application of Nanotubes(6th)
Presentation date: 2005.06
Hysteresis characteristic on the pH sensitive diamond SGFET(T. Ohki, Y. Sasaki, J. Yang, K. S. Song, H. Umezawa, H. Kawarada)
International Conference on New Diamond Science and Technology(10th)
Presentation date: 2005.05
Super long catalyst life time over 20 hours for the growth of single-walled and multiwalled carbon Nanotubes(T. Aikawa, T. Yoshida, T. Iwasaki, R. Hosaka, G. Zhong, H. Kawarada)
International Conference on New Diamond Science and Technology(10th)
Presentation date: 2005.05
Fablication of low resistive layer in diamond surface by Ni ion irradiation with controlling substrate temperature(S. Mejima, H. Hata, T. Arai, H. Umezawa, J. Kurosawa, D. Ferrer, T. Shinada, I. Ohdomari, H. Kawarada)
International Conference on New Diamond Science and Technology(10th)
Presentation date: 2005.05
Control of p-type surface conductivity through charged membranes on the hydrogen-terminated diamond surface(M. Tanaka, D. Ogiwara, Y. Sasaki, K. S. Song, H. Umezawa, H. Kawarada)
International Conference on New Diamond Science and Technology(10th)
Presentation date: 2005.05
Development of diamond MISFETs with low-temperature oxided alumina gate insulator(K. Yohara, K. Hirama, T. Saitoh, K. Park, M. Satoh, H. Umezawa, H. Kawarada)
International Conference on New Diamond Science and Technology(10th)
Presentation date: 2005.05
High-Performance MISFET Using High-Mobility Substrate and Alminum Oxide Gate Insulator(K. Hirama, T. Koshiba, K. Yohara, H. Takayanagi, M. Satoh, H. Umezawa, H. Kawarada, T. Saitoh, K. Park, N. Fujimori)
ADC/Nanocarbon(2005)
Presentation date: 2005.05
低温酸化絶縁膜を用いたダイヤモンドMISFETの特性評価(与原 圭一朗, 平間 一行, 齊藤 丈靖, 朴 慶浩, 佐藤 允也, 梅沢 仁, 川原田 洋)
応用物理学関係連合講演会(春季第52回)
Presentation date: 2005.03
目島 壮一, 畑 英夫, 新井 達也, 梅沢 仁, 黒沢 淳, ドミンゴ フェレール, 品田 賢宏, 大泊 巌, 川原田 洋(目島 壮一, 畑 英夫, 新井 達也, 梅沢 仁, 黒沢 淳, ドミンゴ フェレール, 品田 賢宏, 大泊 巌, 川原田 洋)
応用物理学関係連合講演会(春季第52回)
Presentation date: 2005.03
微細電解質溶液ゲートFETを用いた高感度バイオセンサ(平木 貴博, 川村 正太, 宋 光燮, 中村 雄介, 佐々木 順紀, 出川 宗里, 梅沢 仁, 川原田 洋)
応用物理学関係連合講演会(春季第52回)
Presentation date: 2005.03
負電荷保持薄膜の表面形成による水素終端ダイヤモンドp型表面伝導の向上(田中 雅也, 荻原 大輔, 平間 一行, 佐々木 順紀, 宋 光燮, 梅沢 仁, 川原田 洋)
応用物理学関係連合講演会(春季第52回)
Presentation date: 2005.03
高濃度ボロンドープCVDホモエピタキシャルダイヤモンドの超伝導特性(竹之内 智大, 小林 健作, 高野 義彦, 長尾 雅則, 坂口 勲, 立木 実, 羽多野 毅, 鍾 国倣, 梅沢 仁, 川原田 洋)
応用物理学関係連合講演会(春季第52回)
Presentation date: 2005.03
ダイヤモンドSGFETのpH感応性に対するヒステリシス特性(大木 貴史, 佐々木 順紀, 宋 光燮, 梅沢 仁, 川原田 洋)
応用物理学関係連合講演会(春季第52回)
Presentation date: 2005.03
生体分子固定による超分散性ダイヤモンド(UDDs)の分散性評価(村上 泰規, 中野 善和, 宋 光燮, 張 国軍, 梅沢 仁, 川原田 洋)
応用物理学関係連合講演会(春季第52回)
Presentation date: 2005.03
端放電型マイクロ波プラズマCVDによる長時間成長及び触媒の膜厚と直径の関係(相川 拓海, 吉田 剛, 岩崎 孝之, 保坂 亮太, 鍾 国倣, 川原田 洋)
応用物理学関係連合講演会(春季第52回)
Presentation date: 2005.03
水素終端ダイヤモンドFETチャネル下のBドープ層の影響(小柴 亨, 平間 一行, 高柳 英典, 与原 圭一朗, 齊藤 丈靖, 小倉 政彦, 佐藤 允也, 梅沢 仁, 朴 慶浩, 川原田 洋)
応用物理学関係連合講演会(春季第52回)
Presentation date: 2005.03
ゲート長の微細化によるダイヤモンドMISFETの高周波特性の改善(高柳 英典, 平間 一行, 小柴 亨, 与原 圭一郎, 齊藤 丈靖, 朴 慶浩, 佐藤 允也, 梅沢 仁, 川原田 洋)
応用物理学関係連合講演会(春季第52回)
Presentation date: 2005.03
検出に向けたSGFET-DNAセンサの応用(古川 慧, 中村 雄介, 宋 光燮, 張 国軍, 梁 正勲, 梅沢 仁, 大泊 巌, 川原田 洋)
応用物理学関係連合講演会(春季第52回)
Presentation date: 2005.03
配線応用に向けた先端放電型マイクロ波プラズマCVDによるカーボンナノチューブの低温合成(吉田 剛, 相川 拓海, 岩崎 孝之, 鍾 国倣, 大泊 巌, 川原田 洋)
応用物理学関係連合講演会(春季第52回)
Presentation date: 2005.03
配線応用に向けた先端放電型マイクロ波プラズマCVDによるカーボンナノチューブの低温合成(吉田 剛, 川原田 洋)
フラーレン・ナノチューブ総合シンポジウム(第28回)
Presentation date: 2005.01
Mass production of very long and vertically aligned single-walled carbon Nanotubes(G. Zhong, H. Kawarada)
フラーレン・ナノチューブ総合シンポジウム(第28回)
Presentation date: 2005.01
Bドープ(100)ダイヤモンド水素終端表面を利用したFETの作成(齋藤丈靖,小倉政彦,朴慶浩,大串秀世,平間一行,梅沢仁,川原田洋)
ダイヤモンドシンポジウム(第18回)
Presentation date: 2004.11
Niイオン照射によるダイヤモンドFETの低抵抗ソース・ドレイン領域の形成(目島 壮一, 新井 達也, 梅沢 仁, 川原田 洋)
ダイヤモンドシンポジウム(第18回)
Presentation date: 2004.11
微細ダイヤモンド電解質溶液ゲートFETのバイオセンサへの 利用(平木貴博,川村正太,宋光燮,梅沢仁,川原田洋)
ダイヤモンドシンポジウム(第18回)
Presentation date: 2004.11
高濃度ボロンドープCVDダイヤモンドの超伝導特性(竹之内智大, 小林健作, 高野義彦, 立木実, 羽多野毅, 鍾国倣, 梅沢仁, 川原田洋)
ダイヤモンドシンポジウム(第18回)
Presentation date: 2004.11
生体分子を固定した超分散ダイヤモンドの評価(村上泰規,中野善和,張国軍,梅沢仁,宋光燮, 川原田洋)
ダイヤモンドシンポジウム(第18回)
Presentation date: 2004.11
ダイヤモンド表面オゾン処理によるトランジスタ特性制御(小柴 亨, 平間 一行,梅沢 仁, 川原田 洋)
ダイヤモンドシンポジウム(第18回)
Presentation date: 2004.11
SGFETを利用した電荷検出型ラベルフリーDNAセンサ(古川慧,中村雄介,張国軍,宋光燮,梅沢仁, 川原田洋)
ダイヤモンドシンポジウム(第18回)
Presentation date: 2004.11
The label-free DNA detection using diamond FET based on its molecular charge(Y. Nakamura, K. S. Song, G. Zhang, J. H. Yang, K. Furukawa, S. Kawamura, Y. Sasaki, M. Degawa, H. Umezawa, I. Ohdomari, H. Kawarada)
2004 MRS Fall Meeting
Presentation date: 2004.11
Low Temperature Plasma Enhanced Chemical Vapor Deposition of Carbon Nanotubes and Nanofibers(T. Iwasaki, Y. Yoshida, T. Aikawa, R. Hosaka, K. Honda, G. Zhong, Y. Furukawa, I. Ohdomari, H. Kawarada)
2004 MRS Fall Meeting
Presentation date: 2004.11
Super conductivity in heavily B-doped CVD Diamond thin Film(K. Kobayashi, T. Tekenouchi, Y. Takano, M. Nagao, I. Sakaguchi, M. Tachiki, T. Hatano, G. Zhong, H. Umezawa, H. Kawarada)
2004 MRS Fall Meeting
Presentation date: 2004.11
High power RF Diamond FETs with Low Resistive Source/Drain Carbide Ohmic Layer using Focused Ni Ion Irradiation(H. Hata, T. Arai, S. Mejima, H. Umezawa, D. Ferrer, T. Shinada, I. Ohdomari, H. Kawarada)
2004 MRS Fall Meeting
Presentation date: 2004.11
The pH sensitivity on the hydrogenated diamond surface and its application to biosensors(K. S. Song, Y. Nakamura, M. Degawa, Y. Sasaki, H. Umezawa, H. Kawarada)
SE-Heraeus-Seminar. Biofunctional Interfaces: Basic Science and Applications(334th)
Presentation date: 2004.10
A novel method of DNA immobilization on diamond by aromatic carboxylic compound; hybridization to compare fluorescence intensities(J. H. Yang, K. S. Song, H. Umezawa, H. Kawarada)
SE-Heraeus-Seminar. Biofunctional Interfaces: Basic Science and Applications(334th)
Presentation date: 2004.10
Biosensing mechanism of solution gate diamond FETs(H. Kawarada, H. Umezawa, K. S. Song)
SE-Heraeus-Seminar. Biofunctional Interfaces: Basic Science and Applications(334th)
Presentation date: 2004.10
Biosensing mechanism of solution gate diamond FET(H, Kawarada, K. S. Song, H. Umezawa, Y. Nakamura, Y. Sasaki, M. Degawa)
SE-Heraeus-Seminar. Biofunctional Interfaces: Basic Science and Applications(334th)
Presentation date: 2004.10
DIAMOND FIELD EFFECT TRANSISTORS FOR RF, NANO, AND BIO APPLICATIONS(H. Kawarada, H. Umezawa, K. S. Song)
Int. Semionar on Advances in Carbon Electronics(3rd)
Presentation date: 2004.10
ダイヤモンド表面に芳香族化合物を利用したDNAの固定化(梁正勲, 宋光燮, 張国軍, 川村正太, 中村雄介, 佐々木順紀, 出川宗里, 梅沢仁, 大泊巌, 川原田洋)
応用物理学会学術講演会(秋季第65回)
Presentation date: 2004.09
高品質ゲート絶縁膜を用いたダイヤモンドMISFETと界面評価(与原圭一朗, 平間一行, 宮本真吾, 松平弘樹, 高柳英典, 小柴亨, 目島壮一, 齊藤丈靖, 知京豊裕, 鯉沼秀臣, 長谷川顕, 藤森直治, 梅沢仁, 川原田洋)
応用物理学会学術講演会(秋季第65回)
Presentation date: 2004.09
金属イオン照射による低抵抗ソース・ドレインオーミック層の形成(目島壮一, 畑英夫, 新井達也, 梅沢仁, ドミンゴフェルール, 品田賢宏, 大泊巌, 川原田洋)
応用物理学会学術講演会(秋季第65回)
Presentation date: 2004.09
タンパク質を固定した電解質ゲートダイヤモンドFET(本橋秀樹, 出川宗里, 宋光燮, 中村雄介, 川村正太, 佐々木順紀, 梅沢仁, 川原田洋)
応用物理学会学術講演会(秋季第65回)
Presentation date: 2004.09
微細ダイヤモンド電解質溶液ゲートFETのバイオセンサ応用(平木貴博, 川村正太, 宋光燮, 中村雄介, 佐々木順紀, 出川宗里, 梅沢仁, 川原田洋, 古川慧, 大木貴史, 田中雅也, 本橋秀樹)
応用物理学会学術講演会(秋季第65回)
Presentation date: 2004.09
水素終端ダイヤモンドP型表面伝導における負イオンの影響(II)(田中雅也, 荻原大輔, 平間一行, 佐々木順紀, 宋光燮, 梅沢仁, 川原田洋)
応用物理学会学術講演会(秋季第65回)
Presentation date: 2004.09
高濃度ボロンドープCVDダイヤモンドの超伝導特性(竹之内智大, 小林健作, 高野義彦, 長尾雅則, 坂口勲, 立木実, 羽田野毅, 鍾国倣, 梅沢仁, 川原田洋)
応用物理学会学術講演会(秋季第65回)
Presentation date: 2004.09
ダイヤモンド表面のpH感応性(大木貴史, 佐々木順紀, 宋光燮, 中村雄介, 川村正太, 出川宗里, 田中雅也, 平木貴博, 梅沢仁, 川原田洋, 本橋秀樹)
応用物理学会学術講演会(秋季第65回)
Presentation date: 2004.09
超分散ダイヤモンド(UDD)を用いた生体分子固定とその評価(村上泰規, 中野善和, 宋光燮, 梅沢仁, 座古保, 船津高志, 本多光太郎, 古川行夫, 川原田洋)
応用物理学会学術講演会(秋季第65回)
Presentation date: 2004.09
カーボンナノチューブ低電力大面積合成のための先端放電型マイクロ波プラズマCVD装置(相川拓海, 吉田剛, 岩崎孝之, 保坂亮太, 鍾国倣, 川原田洋)
応用物理学会学術講演会(秋季第65回)
Presentation date: 2004.09
ダイヤモンド表面オゾン処理によるトランジスタ特性制御(小柴亨, 平間一行, 高柳英典, 竹之内智大, 目島壮一, 与原圭一朗, 齊藤丈靖, 佐藤允也, 梅沢仁, 朴慶治, 藤森直治, 川原田洋)
応用物理学会学術講演会(秋季第65回)
Presentation date: 2004.09
De-embedding手法を用いたダイヤモンドRFトランジスタの真性特性評価(高柳英典, 平間一行, 小柴亨, 目島壮一, 与原圭一朗, 佐藤允也, 梅沢仁, 川原田洋)
応用物理学会学術講演会(秋季第65回)
Presentation date: 2004.09
電解質ゲートダイヤモンドFETを利用したDNAセンサ(古川慧, 中村雄介, 宋光燮, 張国軍, 梁正勲, 川村正太, 梅沢仁, 大泊巌, 川原田洋)
応用物理学会学術講演会(秋季第65回)
Presentation date: 2004.09
端放出型マイクロ波プラズマCVDによる垂直配向・高密度単層カーボンナノチューブの低温合成(吉田剛, 岩崎孝之, 保坂亮太, 本多光太郎, 鍾国倣, 古川行夫, 大泊巌, 川原田洋)
応用物理学会学術講演会(秋季第65回)
Presentation date: 2004.09
Immobilization of biological molecule using ultra-dispersed diamond and its application(Y. Nakano, H. Umezawa, G-J. Zhang, Y. Kaibara, K. S. Song, T. Zako, T. Funatsu, K. Honda, Y. Furukawa, H. Kawarada)
European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, Nitrides & Silicon Carbide(15th)
Presentation date: 2004.09
Mechanism on the nonvolatile memory effect on diamond in-plane-gated field-effect transistors(Y. Itoh, Y. Sumikawa, K. Kobayashi, H. Umezawa, H. Kawarada)
European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, Nitrides & Silicon Carbide(15th)
Presentation date: 2004.09
Modification of diamond thin films utilizing electron beam and focused-ion beam(T. Arai, H. Hata, H. Umezawa, D. Ferrer, T. Shinada, I. Ohdomari, H. Kawarada)
European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, Nitrides & Silicon Carbide(15th)
Presentation date: 2004.09
The antenna-edge-type microwave plasma-assisted chemical vapor deposition for carbon nanotube growth(R. Hosaka, G. Zhong, T. Iwasaki, H. Kawarada)
European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, Nitrides & Silicon Carbide(15th)
Presentation date: 2004.09
The bio-application of electrolyte-solution-gate diamond FETs(M. Degawa, K. S. Song, Y. Nakamura, Y. Sasaki, S. Kawamura, H. Umezawa, H. Kawarada)
European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, Nitrides & Silicon Carbide(15th)
Presentation date: 2004.09
Biosensors Based on Diamond Transistors(H. Kawarada, H. Umezawa, H. Kanazawa, Y. Nakamura, Y. Kaibara, M. Degawa, Y. Sasaki, K. S. Song)
European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, Nitrides & Silicon Carbide(15th)
Presentation date: 2004.09
Low temperature synthesis of highly oriented and very dense single-walled carbon nanotubes by remote microwave plasma chemical vapour deposition(G. F. Zhong, H. Kawarada, I. Ohdomari)
European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, Nitrides & Silicon Carbide(15th)
Presentation date: 2004.09
Miniaturized electrolyte solution gate FET on polycrystalline diamond(S. Kawamura, K. S. Song, H. Umezawa, Y. Nakamura, Y. Sasaki, M. Degawa, H. Kawarada)
European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, Nitrides & Silicon Carb(15th)
Presentation date: 2004.09
Diamond MISFETs for High Frequency Applications(H. Umezawa, H. Kawarada)
2004 International Conference on Solid State Devices and Materials
Presentation date: 2004.09
Diamond Field Effect Transistors for Microwave Devices and Biosensing Applicaton(H. Kawarada, H. Umezawa, S. MIyamoto, H. Matsudaira, K. S. Song)
ADC
Presentation date: 2004.08
水素終端ダイヤモンドP型表面伝導における負イオンの影響(荻原大輔、川原田洋)
応用物理学会学術連合講演会(第51回)
Presentation date: 2004.03
ダイヤモンドin-plane-gated FETにおけるヒステリシス特性の光エネルギー(伊藤裕、川原田洋)
応用物理学会学術連合講演会(第51回)
Presentation date: 2004.03
pH-sensitivity of aminated diamond surface(Y. Sasaki, K. Song, H. Kanazawa, Y. Nakamura, S. Kawamura, M. Degawa, Y. Kurihara, H. Umezawa, H. Kawarada)
International Conference on New Diamond Science and Technology(The 9th)
Presentation date: 2004.03
Hysteresis characteristics of diamond in-plane-gated FETs for nonvolatile memory device(Y. Itoh, Y. Sumikawa, K. Kobayashi, H. Umezawa, H. Kawarada)
International Conference on New Diamond Science and Technology(The 9th)
Presentation date: 2004.03
Structural investigation of conical carbon nanofibers(T. Iwasaki, G. Zhong, I. Ohdomari, H. Kawarada)
International Conference on New Diamond Science and Technology(The 9th )
Presentation date: 2004.03
Nano-scale surface modification of diamond utilizing gas-introdeced electron beam(T. Arai, H. Hata, H. Umezawa, Y. Kaibara, K. Song, H. Kawarada)
International Conference on New Diamond Science and Technology(The 9th )
Presentation date: 2004.03
Glucose biosensors using electrolyte-solution-gate diamondFETs(M. Degawa, K. Song, H. Kanazawa, Y. Nakamura, Y. Sasaki, S. Kawamura, Y. Kurihara, H. Umezawa, H. Kawarada)
International Conference on New Diamond Science and Technology(The 9th )
Presentation date: 2004.03
Enzyme immobilized biosensor based on surface modified diamond field effect transistors(K. S. Song, H. Kanazawa, Y. Nakamura, S. Kawamura, M. Degawa, Y. Sasaki, H. Umezawa, H. Kawarada)
International Conference on New Diamond Science and Technology(The 9th )
Presentation date: 2004.03
RF characteristic of diamond transistor with low resistance(K. Hirama, S. Miyamoto, H. Matsudaira, K. Song, H. Umezawa, H. Kawarada)
International Conference on New Diamond Science and Technology(The 9th )
Presentation date: 2004.03
“Diamond MIS transistors for high frequency applications(H. Kawarada, K. Hirama, H. Matsudaira, S. Miyamoto, M. Satoh, H. Umezawa)
International Conference on New Diamond Science and Technology(The 9th)
Presentation date: 2004.03
Systematic study of parameters on the synthesis of conical carbon nanofibers(G. Zhong, T. Iwasaki, H. Kawarada, I. Ohdomari)
International Conference on New Diamond Science and Technology(The 9th )
Presentation date: 2004.03
Functionalized diamond surface by DNA covalent immobilization for bio-sensing applications(Functionalized diamond surface by DNA covalent immobilization for bio-sensing applications)
International Conference on New Diamond Science and Technology(The 9th )
Presentation date: 2004.03
超分散性ダイヤモンドを用いたナノバイオアプリケーション(中野善和, 梅沢仁, 張国軍, 宋光燮, 貝原雄, 座古保, 船津高志, 川原田洋)
ダイヤモンドシンポジウム(第17回)
Presentation date: 2003.11
ダイヤモンドin-plane-gated FETのヒステリシス特性(伊藤裕, 澄川雄, 小林健作, 立木実, 梅沢仁, 川原田洋)
ダイヤモンドシンポジウム(第17回)
Presentation date: 2003.11
水素終端表面伝導層を用いたサブミクロンダイヤモンドFETのDC・RF特性(梅沢仁、川原田洋)
電子情報通信学会
Presentation date: 2003.09
多結晶ダイヤモンド基板を用いた微細電解質溶液ゲートFET(川村正太、川原田洋)
電気化学秋季大会
Presentation date: 2003.09
電解質ゲートダイヤモンドFETのpH感応性とバイオセンサ応用(金澤啓史、川原田洋)
電気化学秋季大会
Presentation date: 2003.09
Biosensors based on diamond transistors
European Conference on Diamond, Diamond-like Materials, Carbon Nanotubes, Nitrides and Silicon Carbide (the 14th )
Presentation date: 2003.09
Current-voltage hysteresis behaviour of Diamond in-plane-gated field effect transistors(Y. Sumikawa, M. Tachiki, K. Kobayashi, H. Umezawa, H. Kawarada)
European Conference on Diamond, Diamond-like Materials, Carbon Nanotubes, Nitrides and Silicon Carbide(the 14th )
Presentation date: 2003.09
pH-dependence of electrolyte-solution-gate field-effect-transistors using aminated diamond surface(Y. Nakamura, K. S. Song, H. Kanazawa, T. Sakai, H. Umezawa, M. Tachiki, H. Kawarada)
European Conference on Diamond, Diamond-like Materials, Carbon Nanotubes, Nitrides and Silicon Carbide(the 14th )
Presentation date: 2003.09
Surface potential measurements for DNA-immobilized diamond(Y. Kaibara, H. Umezawa, M. Tachiki, H. Hata, K. S. Song, G.. J. Zhang, I. Ohdomari, H. Kawarada)
European Conference on Diamond, Diamond-like Materials, Carbon Nanotubes, Nitrides and Silicon Carbide(the 14th)
Presentation date: 2003.09
RF-Diamond-MISFETs on High-Mobility Diamond Substrates(S. Miyamoto, H. Matsudaira, M. Kohno, K. Hirama, H. Umezawa, M. Tachiki, H. Kawarada)
European Conference on Diamond, Diamond-like Materials, Carbon Nanotubes, Nitrides and Silicon Carbide(the 14th )
Presentation date: 2003.09
Sub-micron gate Diamond MISFETs characteristics(H. Matsudaira, S. Miyamoto, K. Hirama, H. Umezawa, H. Kawarada)
European Conference on Diamond, Diamond-like Materials, Carbon Nanotubes, Nitrides and Silicon Carbide(the 14th)
Presentation date: 2003.09
Cathodoluminescence of excitons and electron hole liquid of type Ⅱa diamond(H. Kawai, K. Nakazawa, M. Tachiki, H. Umezawa, H. Kawarada)
European Conference on Diamond, Diamond-like Materials, Carbon Nanotubes, Nitrides and Silicon Carbide(the 14th )
Presentation date: 2003.09
Nano-scale surface modification of diamond utilizing Gas-Introduced Electron Beam Lithography (GIEBL)(H. Hata, H. Umezawa, Y. Kaibara, K. S. Song, M. Tachiki, H. Kawarada)
European Conference on Diamond, Diamond-like Materials, Carbon Nanotubes, Nitrides and Silicon Carbide(the 14th )
Presentation date: 2003.09
ゲート抵抗低減によるダイヤモンドMISFETの高周波特性の改善(平間一行, 宮本真吾, 松平弘樹, 小林健作, 河野真宏, 梅沢仁, 川原田洋)
応用物理学会(第64回)
Presentation date: 2003.08
ガス導入電子線描画装置による微細領域へのマスクレスダイヤモンド表面修飾(新井達也, 畑英夫, 梅沢仁, 貝原雄, 宋光燮, 川原田洋)
応用物理学会(第64回)
Presentation date: 2003.08
ダイヤモンド微細in-plane-gated FETにおける特性解析(小林健作, 立木実, 澄川雄, 伊藤裕, 梅沢仁, 川原田洋)
応用物理学会(第64回)
Presentation date: 2003.08
電解質ゲートダイヤモンドFETを利用したグルコースセンサ(出川宗里, 宋光燮, 金澤啓史, 中村雄介, 川村正太, 佐々木順紀, 栗原裕介, 梅沢仁, 川原田洋)
応用物理学会(第64回)
Presentation date: 2003.08
電解質ゲートダイヤモンドFETを用いたダイヤモンド表面のpH感応性評価(佐々木順紀, 宋光燮, 金澤啓史, 中村雄介, 川村正太, 出川宗里, 栗原裕介, 梅沢仁, 川原田洋)
応用物理学会(第64回)
Presentation date: 2003.08
高密度励起子下におけるⅡa型ダイヤモンドの電子正孔液滴と束縛励起子(荻原大輔, 河井啓朗, 松平弘樹, 梅沢仁, 川原田洋)
応用物理学会(第64回)
Presentation date: 2003.08
ダイヤモンドin-plane-gated FETのヒステリシス特性(伊藤裕, 澄川雄, 小林健作, 立木実, 梅沢仁, 川原田洋)
応用物理学会(第64回)
Presentation date: 2003.08
Urea sensor used hydrogen-terminated polycrystalline diamond FETs(K. S. Song, T. Sakai, H. Kanazawa, N. Fujihara, Y. Nakamura, S. Kawamura, H. Umezawa, M. Tachiki, H. Kawarada)
Electrochemical Society 2003
Presentation date: 2003.04
Potential-Sensitive Detection of Charged Biomolecules on Functional Diamond Surface(H. Umezawa, M. Tachiki, Y. Kaibara, T. Sakai, K. S. Song, H. Ishizaka, H. Kawarada)
Electrochemical Society 2003
Presentation date: 2003.04
Chemically Modified Diamond Surfaces for Chemical Sensor Applications(H. Umezawa, H. Kawarada)
2003 MRS(Spring Meeting)
Presentation date: 2003.04
アミノ修飾されたダイヤモンド電解質溶液ゲートFETのpH依存性(中村雄介, 宋光燮, 金澤啓史, 堺俊克, 梅沢仁, 立木実, 川原田洋)
応用物理学会(第50回)
Presentation date: 2003.03
水素終端多結晶ダイヤモンドFETを利用した尿素センサ(宋光燮, 堺俊克, 金澤啓史, 藤原直樹, 中村雄介, 川村正太, 梅沢仁, 立木実, 川原田洋)
応用物理学会(第50回)
Presentation date: 2003.03
微細電解質溶液ゲートFETの作製[Ⅱ](川村正太, 藤原直樹, 宋光燮, 金澤啓史, 堺俊克, 梅沢仁, 川原田洋)
応用物理学会(第50回)
Presentation date: 2003.03
ダイヤモンド in-plane-gated FETの相互コンダクタンス向上とヒステリシス効果(小林健作, 立木実, 坂野時習, 澄川雄, 梅沢仁, 川原田洋)
応用物理学会(第50回)
Presentation date: 2003.03
DNA修飾ダイヤモンドにおける表面電位測定(貝原雄, 梅沢仁, 畑英夫, 金澤啓史, 宋光燮, 張国軍, 立木実, 川原田洋)
応用物理学会(第50回)
Presentation date: 2003.03
ハイパワートランジスタの最適化構造(河野真宏, 宮本真吾, 松平弘樹, 石坂博明, 中澤一志, 宋光燮, 梅沢仁, 立木実, 川原田洋)
応用物理学会(第50回)
Presentation date: 2003.03
高密度励起下におけるⅡa型ダイヤモンドの励起子と電子正孔液滴のCL評価(河井啓朗, 中澤一志, 梅沢仁, 立木実, 川原田洋)
応用物理学会(第50回)
Presentation date: 2003.03
ダイヤモンド表面へのDNAの固定化及びハイブリダイゼーション
応用物理学会(第50回)
Presentation date: 2003.03
Diamond nanofabrication and electronics for biosensing application(M. Tachiki , H. Kawarada)
Surface and Bulk Defects in CVD Diamond Films Ⅷ
Presentation date: 2003.02
RF Characteristics of Diamond Surface Channel FETs(H. Umezawa, S. Miyamoto, H. Matsudaira, H. Ishizaka, M. Tachiki, H. Kawarada)
TWHM 2003
Presentation date: 2003.01
Diamond Power Transistors(H. Umezawa, H. Kawarada)
2002 MRS(Fall Meeting)
Presentation date: 2002.12
フッ素・酸素・アミノ基によるダイヤモンドの微細領域表面化学修飾(畑英夫, 梅沢仁, 石坂博明, 貝原雄, 金澤啓史, 藤原直樹, 堺俊克, 宋光燮, 張国軍, 立木実, 座古保, 船津和夫, 川原田洋)
ダイヤモンドシンポジウム(第16回)
Presentation date: 2002.11
ダイヤモンドISFETへのオゾン処理の影響(中村雄介, 金澤啓史, 堺俊克, 宋光燮, 梅沢仁, 立木実, 川原田洋)
ダイヤモンドシンポジウム(第16回)
Presentation date: 2002.11
多結晶ダイヤモンド基板を用いた微細電解質溶液ゲートFETの作製(川村正太, 藤原直樹, 宋光燮, 金澤啓史, 堺俊克, 梅沢仁, 川原田洋)
ダイヤモンドシンポジウム(第16回)
Presentation date: 2002.11
ダイヤモンドin-plane-gated FETのゲートリーク電流の低減(小林健作, 立木実, 梅沢仁, 坂野時習, 澄川雄)
ダイヤモンドシンポジウム(第16回)
Presentation date: 2002.11
表面チャネル型ダイヤモンドFETの特性評価(河野真宏, 宮本真吾, 松平弘樹, 石坂博明, 中澤一志, 宋光燮, 梅沢仁, 立木実, 川原田洋)
ダイヤモンドシンポジウム(第16回)
Presentation date: 2002.11
Nanoscale Characterization of the Modified Functional Diamond Surface by Kelvin Force Microscope(M. Tachiki , H. Kawarada)
Internatioal Colloquium on Scanning Probe Microscopy(10th)
Presentation date: 2002.11
KFMによる水素終端ダイヤモンド表面微細構造の評価(立木実、川原田洋)
応用物理学会(第63回)
Presentation date: 2002.09
高温高圧合成Ⅱaダイヤモンドにおける励起子発光の非線形増加(中澤一志、川原田洋)
応用物理学会(第63回)
Presentation date: 2002.09
水素終端ダイヤモンドを用いたイオン感応性FETへのオゾン処理の影響(中村雄介、川原田洋)
応用物理学会(第63回)
Presentation date: 2002.09
微細電解質溶液ゲートFETの作製(川村正太、川村正太)
応用物理学会(第63回)
Presentation date: 2002.09
ダイヤモンドin-plane-gated FETのゲートリーク電流の低減(小林健作、川原田洋)
応用物理学会(第63回)
Presentation date: 2002.09
表面パッシベートされた微細ダイヤモンドFETの高周波諸特性(宮本真吾、川原田洋)
応用物理学会(第63回)
Presentation date: 2002.09
Cryogenic operation of diamond surface-channel electronic devices(H. Ishizaka, H. Kawarada)
SSDM 2002
Presentation date: 2002.09
Control of tunnel barrier in slit structure by side gate potential for diamond single gate hole transistors(Y. Sumikawa, H. Kawarada)
13th European Conference on Diamond,Diamond-like Materials,Carbon Nanotubes,Nitrides & Silicon Carbide(Diamond 2002)
Presentation date: 2002.09
Adhension force measurement for the hydrogen-terminated diamond surface and the oxidized area using atomic force microscope(Y. Kaibara, H. Kawarada)
13th European Conference on Diamond,Diamond-like Materials,Carbon Nanotubes,Nitrides & Silicon Carbide(Diamond 2002)
Presentation date: 2002.09
Initial growth of heteroepitaxial diamond on Ir(001)/MgO(001) substrates using antenna-edge microwave plasma assisted chemical vapor deposition(T. Fujisaki, H. Kawarada)
13th European Conference on Diamond,Diamond-like Materials,Carbon Nanotubes,Nitrides & Silicon Carbide(Diamond 2002)
Presentation date: 2002.09
Field-effect control of the nano-scale channel conductance on hydrogen-terminated diamond surface(T. Banno, H. Kawarada)
13th European Conference on Diamond,Diamond-like Materials,Carbon Nanotubes,Nitrides & Silicon Carbide(Diamond 2002)
Presentation date: 2002.09
High Performance diamond MISFETs using CaF2 gate insulator(S. Miyamoto, H. Kawarada)
13th European Conference on Diamond,Diamond-like Materials,Carbon Nanotubes,Nitrides & Silicon Carbide(Diamond 2002)
Presentation date: 2002.09
High sensitive electrolyte solution gate FET on polished polycrystalline diamond(N. Fujihara, H. Kawarada)
13th European Conference on Diamond,Diamond-like Materials,Carbon Nanotubes,Nitrides & Silicon Carbide(Diamond 2002)
Presentation date: 2002.09
Ion sensitivity of hydrogen-terminated diamond(H. Kanazawa, H. Kawarada)
13th European Conference on Diamond,Diamond-like Materials,Carbon Nanotubes,Nitrides & Silicon Carbide(Diamond 2002)
Presentation date: 2002.09
Nonlinear increase of excitonic emision in synthetic type IIa diamond(K. Nakazawa, H. Kawarada)
International conference New Diamond Science and Technology(8th)
Presentation date: 2002.07
Nanoelectronics based on diamond surfaces(H. Kawarada, M. Tachiki, H. Umezawa)
International Conference New Diamond Science and Technology (8th)
Presentation date: 2002.07
Ozone Treated Channel Diamond FETs(T. Sakai, H. Kawarada)
International Conference New Diamond Science and Technology (8th)
Presentation date: 2002.07
Deep sub-micron gate diamond MISFETs(H. Matsudaira, H. Kawarada)
International Conference New Diamond Science and Technology (8th)
Presentation date: 2002.07
Nanoelectronics based on diamond surfaces(H. Kawarada, M. Tachiki, H. Umezawa)
International Conference New Diamond Science and Technology (8th)
Presentation date: 2002.07
Cryogenic operation of surface channel diamond field-effect transistors(M. Tachiki, H. Kawarada)
International Cnference New Diamond Science and Technology (8th)
Presentation date: 2002.07
Characteristic of electrolyte-solution-gate diamond FETs for biosensor(K. S. Song, H. Kawarada)
World Congress on Biosensors 2002(7th)
Presentation date: 2002.05
ダイヤモンド水素終端表面におけるハロゲンイオンの影響(堺俊克, 川原田洋)
電気化学会(第69回)
Presentation date: 2002.04
Low-temperatures operation of diamond surface -channel field-effect-transistors(M. Tachiki, H. Kawarada)
2002 MRS(spring meeting)
Presentation date: 2002.04
Cl-ion sensing using electrolyte-solution-gate diamond FETs(K. S. Song, H. Kawarada)
2002 MRS(spring meeting)
Presentation date: 2002.04
ダイヤモンド表面上の電荷と物質吸着の計算化学による評価(米窪大介, 川原田洋)
応用物理学関係連合講演会(第49回)
Presentation date: 2002.03
先端放電型マイクロ波プラズマCVD装置を用いたIr基板上へのヘテロエピタキシャルダイヤモンド核形成初期課程の考察(藤崎豊克, 川原田洋)
応用物理学関係連合講演会(第49回)
Presentation date: 2002.03
硫黄ドープダイヤモンドの電気的及びカソードルミネッセンス評価(中澤一志, 川原田洋)
応用物理学関係連合講演会(第49回)
Presentation date: 2002.03
オゾン処理により高抵抗化された水素終端チャネルでのFET特性(宋光燮, 川原田洋)
応用物理学関係連合講演会(第49回)
Presentation date: 2002.03
極低温状態における表面チャネル型ダイヤモンドFETの特性評価(石坂博明, 川原田洋)
応用物理学関係連合講演会(第49回)
Presentation date: 2002.03
サイドゲートポテンシャルによるスリット構造トンネル障壁の制御(澄川雄, 川原田洋)
応用物理学関係連合講演会(第49回)
Presentation date: 2002.03
ダイヤモンドMISFETの特性改善(松平弘樹, 川原田洋)
応用物理学関係連合講演会(第49回)
Presentation date: 2002.03
水素終端ダイヤモンドのハロゲンイオン感応性(金澤啓史, 川原田洋)
応用物理学関係連合講演会(第49回)
Presentation date: 2002.03
CaF2パッシベートされたダイヤモンド表面伝導層の移動度上昇(宮本真吾, 川原田洋)
応用物理学関係連合講演会(第49回)
Presentation date: 2002.03
アドヒージョンフォースマッピング測定による水素終端ダイヤモンド表面とAFM局所酸化領域の吸着力評価(貝原雄, 川原田洋)
応用物理学関係連合講演会(第49回)
Presentation date: 2002.03
Nanotransistors on diamond surfaces(H. Kawarada)
International Symposium on Advance Materials (ISAM2002)(9th)
Presentation date: 2002.03
Cathodoluminescence of n-type diamond(. Ishizaka, H. Umezawa, H. Taniuchi, T. Arima, N. Fujihara, M. Tachiki H. Kawarada)
ISAM2002
Presentation date: 2002.03
表面チャネル型ダイヤモンドトランジスタの高周波・高出力特性(石坂博明, 川原田洋)
2002年電子情報通信学会総合大会
Presentation date: 2002.03
ダイヤモンドを活用した新しいデバイスへの展開(川原田洋)
応用物理学会北陸・信越支部学術講演会
Presentation date: 2001.12
Adhesion force measurement for hydrogen-terminated diamond surface and AFM lical Insulated area (K. Sugata, H. Kawarada)
International Colloquium on Scanning Probe Microscopy(9th)
Presentation date: 2001.12
Fabrication of single hole transistor on hydrogen-terminated diamond using AFM anodic oxidation process(H. Seo, H. Kawarada)
International Colloquium on Scanning Probe Microscopy(9th)
Presentation date: 2001.12
ダイヤモンド表面のエレクトロニクス・バイオ応用(川原田洋)
日本表面科学会講演大会(第21回)
Presentation date: 2001.11
ダイヤモンド単正孔トランジスタのクーロンブロッケード特性(澄川雄, 川原田洋)
ダイヤモンドシンポジウム(第15回)
Presentation date: 2001.11
高性能化に向けたダイヤモンド微細MISFETの特性解析(松平 弘樹, 梅沢 仁, 立木 実, 大庭 誉士和, 有馬 拓也, 谷内 寛直, 田中 啓章, 藤原 直樹, 石坂 博明, 宮本 真吾, 宋 光燮, 川原田 洋)
ダイヤモンドシンポジウム(第15回)
Presentation date: 2001.11
ハロゲンイオンがダイヤモンド水素終端表面伝導層に与える影響(金澤 啓史, 堺 俊克, 荒木 裕太, 宋 光燮, 梅沢 仁, 立木 実, 川原田 洋)
ダイヤモンドシンポジウム(第15回)
Presentation date: 2001.11
ダイヤモンドFETの高周波評価(宮本真吾, 川原田洋)
ダイヤモンドシンポジウム(第15回)
Presentation date: 2001.11
フォースカーブ測定による水素終端ダイヤモンド表面とAFM局所酸化領域の吸着力評価(貝原 雄, 米窪 大介, 須方 健太, 立木 実, 川原田 洋)
ダイヤモンドシンポジウム(第15回)
Presentation date: 2001.11
ディープサブミクロンチャネルダイヤモンドMISFETの作製(有馬拓也, 川原田洋)
電子情報通信学会ソサイエティ大会
Presentation date: 2001.09
ダイヤモンドMISFETの高周波評価(谷内寛直, 川原田洋)
電子情報通信学会ソサイエティ大会
Presentation date: 2001.09
ダイヤモンドFETの構造最適化による特性改善(宮本 真吾, 石坂 博明, 谷内 寛直, 梅沢 仁, 川原田 洋)
応用物理学会(第62回)
Presentation date: 2001.09
The effect of strong acid and alkaline solutions on H-terminated diamond surface chanel FETs(T. Sakai, H. Kawarada)
European Conference on Diamond ,Diamond-Like Materials,Carbon Nanotubes,Nitrides and Sillicon Carbide(12th)
Presentation date: 2001.09
Fabrication of heteroepitaxial diamond thin films on Ir(001)/MgO(001) substrates using antenna-adge type microwave plasma assisted chemical vapor deposition(T. Fujisaki, H. Kawarada)
European Conference on Diamond ,Diamond-Like Materials,Carbon Nanotubes,Nitrides and Sillicon Carbide(12th)
Presentation date: 2001.09
Fabrication of diamond single hole transistor using AFM anodization process(T. Banno、H.Kawarada)
European Conference on Diamond ,Diamond-Like Materials,Carbon Nanotubes,Nitrides and Sillicon Carbide(12th)
Presentation date: 2001.09
Excitonic recombination radiation in phoshorus-and sulfur-doped CVD diamonds(K. Nakazawa, H. Kawarada)
European Conference on Diamond ,Diamond-Like Materials,Carbon Nanotubes,Nitrides and Sillicon Carbide(12th)
Presentation date: 2001.09
High performance polycrystalline diamond MISFET(H. Umezawa, H. Kawarada)
European Conference on Diamond ,Diamond-Like Materials,Carbon Nanotubes,Nitrides and Sillicon Carbide(12th)
Presentation date: 2001.09
Device simulation for the suppression of short channel effect(H. Tanaka, H. Kawarada)
European Conference on Diamond ,Diamond-Like Materials,Carbon Nanotubes,Nitrides and Sillicon Carbide(12th)
Presentation date: 2001.09
High Frequency operation of diamond FETs(H. Ishizaka, H. Kawarada)
European Conference on Diamond ,Diamond-Like Materials,Carbon Nanotubes,Nitrides and Sillicon Carbide(12th)
Presentation date: 2001.09
Electrolyte-solution-gate diamond FETs operated in Cl ionic solution(T. Sakai, H. Kawarada)
2001 international conference on solid state devices and materials
Presentation date: 2001.09
High frequency applications of polycrystalline diamond field-effect transistors(H. Umezawa, H. Kawarada)
2001 international conference on solid state devices and materials
Presentation date: 2001.09
Heteroepitaxial Diamond thin film growth on Ir(001)/MgO(001) substrate by antenna-edge plasma assisted chemical vapor deposition(M. Tachiki, H. Kawarada)
The thirteenth international conference on crystal growth in conjunction with the eleventh international conference on vapor growth nad epitaxy
Presentation date: 2001.07
Nanodevice fabrication on hydrogenated diamond surface using atomic force microscope (M. Tachiki, H. Kawarada)
International workshop on quantum nonplanar nanostructures & nanoelectronics '01(1st)
Presentation date: 2001.07
Nano scale oxidation on the hydrogen-terminated diamond surface for diamond nano technology(M. Tachiki, H. Kawarada)
2001 MRS(spring meeting)
Presentation date: 2001.04
Nanoscale fabrication on hydrogenated diamond surface using atomic force microscope(M. Tachiki , H. Kawarada)
2001 MRS(spring meeting)
Presentation date: 2001.04
High frequency performance of diamond field-effect transistor(H. Umezawa, H. Kawarada)
2001 MRS(spring meeting)
Presentation date: 2001.04
Fabrication of sub-0.1 micron channel diamond MISFET(H. Umezawa, H. Kawarada)
2001 MRS(spring meeting)
Presentation date: 2001.04
Nanoscale local oxidation on hydrogenated diamond surface using atomic force microscope for quantum device fabrication(M. Tachiki, H. Kawarada)
International symposium on advanced physical field "Growth of Well-defined Nanostructures"(6th)
Presentation date: 2001.03
Local oxidation on hydrogenated diamond surface using atomic force microscope for quantum nanodevice fabrication(M. Tachiki, H. Kawarada)
International symposium on diamond electronic devices(3rd)
Presentation date: 2001.01
High frequency operation of hydrogen-terminated surface-channel diamond field-effect transistors(H. Umezawa, H. Kawarada)
International symposium on diamond elecronic devices(3rd)
Presentation date: 2001.01
Electro-chemical applications of diamond(H. Kawarada)
New Materials for Multifunctional Sensor Applications
Presentation date: 2000.12
ディープサブミクロンゲートダイアモンドFETの作製(有馬拓也, 川原田洋)
第47回応用物理学関係連合講演会
Presentation date: 2000.03
Diamond-SiC界面の構造についてのクラスター計算(Ⅴ)(日根恭子, 川原田洋)
第47回応用物理学関係連合講演会
Presentation date: 2000.03
リアクティブ・イオン・エッチングによるダイヤモンド薄膜の微細加工(田辺憲司, 川原田洋)
第47回応用物理学関係連合講演会
Presentation date: 2000.03
水素終端ダイヤモンドFETのマイクロ波デバイス評価(谷内寛直, 川原田洋)
第47回応用物理学関係連合講演会
Presentation date: 2000.03
ダイヤモンド表面におけるAFMナノファブリケーションによるトンネル接合の作製(瀬尾北斗, 川原田洋)
第47回応用物理学関係連合講演会
Presentation date: 2000.03
AFMによるダイヤモンド表面加工領域の形状変化に対する評価(須方健太, 川原田洋)
第47回応用物理学関係連合講演会
Presentation date: 2000.03
電解質水溶液中のダイヤモンドFET(荒木裕太, 川原田洋)
第47回応用物理学関係連合講演会
Presentation date: 2000.03
Local Insulation of Semiconducting Diamond Surfaces using Atomic Force Microscope
The 7th International Colloquium on Scanning Probe Microscopy/応用物理学会
Presentation date: 1999.12
セルフアラインシステムを用いた1μmゲート水素終端ダイヤモンドFET(谷内寛直, 川原田洋)
SiC及び関連ワイドギャップ半導体研究会/応用物理学会
Presentation date: 1999.12
Nanofabrication on Hydrogen-Terminated Diamond Surface AFM-Probe-Induced Oxidation(M. Tachiki, H. Kawarada)
International Symposium on Surface Science for Micro-and Nano-Device Fabrication
Presentation date: 1999.12
水素終端ダイヤモンドFETにおけるプロセス改善による寄生抵抗の制御(有馬拓也, 川原田洋)
第13回ダイヤモンドシンポジウム
Presentation date: 1999.11
セルフアラインプロセスを用いたCu/CaF2/Diamond MISFET(梅沢仁, 川原田洋)
第13回ダイヤモンドシンポジウム
Presentation date: 1999.11
ダイヤモンド表面チャネル型電界効果トランジスタのキャリアの量子化を考慮したデバイスシミュレーション(大庭誉士和, 川原田洋)
第13回ダイヤモンドシンポジウム
Presentation date: 1999.11
AFMによるダイヤモンド表面機能性の制御(瀬尾北斗, 川原田洋)
第13回ダイヤモンドシンポジウム
Presentation date: 1999.11
走査型プローブ顕微鏡による水素終端ダイヤモンド表面のナノファブリケーションおよび電気特性(須方健太, 川原田洋)
第13回ダイヤモンドシンポジウム
Presentation date: 1999.11
Diamond-SiCおよびDiamond-Si界面構造についてのクラスター計算(森田和敏, 川原田洋)
第13回ダイヤモンドシンポジウム
Presentation date: 1999.11
アルカリ溶液中におけるダイヤモンドISFET(小川雄史, 川原田洋)
第13回ダイヤモンドシンポジウム
Presentation date: 1999.11
Controlling of Adsorbates and Conduction on CVD-grown Diamond Surface by Scanning Probe Microscopev(M. Tachiki, H. Kawarada)
3rd International Symposium on Control of Semiconductor Interfaces
Presentation date: 1999.10
High Performance Diamond Surface-Channel Field-Effect Transistors(H. Umezawa, H. Kawarada)
3rd International Symposium on Control of Semiconductor Interfaces
Presentation date: 1999.10
AFMによるダイヤモンド表面の吸着原子制御(立木実, 川原田洋)
第60回応用物理学会学術講演会
Presentation date: 1999.09
水素終端ダイヤモンドFETにおけるプロセス改善による相互コンダクタンスの向上(有馬拓也, 川原田洋)
第60回応用物理学会学術講演会
Presentation date: 1999.09
AFMを用いた電界支援酸化による水素終端ダイヤモンド表面のナノ加工(福田徹, 川原田洋)
第60回応用物理学会学術講演会
Presentation date: 1999.09
平坦化された多結晶ダイヤモンドにおける酸素プラズマエッチング(田辺憲司, 川原田洋)
第60回応用物理学会学術講演会(No.2)
Presentation date: 1999.09
ダイヤモンド表面チャネル型FETのデバイスシミュレーション(津川和夫, 川原田洋)
第60回応用物理学会学術講演会
Presentation date: 1999.09
セルフアラインプロセスを用いたダイヤモンドMISFETの製作(谷内寛直, 川原田洋)
第60回応用物理学会学術講演会
Presentation date: 1999.09
Diamond-SiC界面の構造についてのクラスター計算(Ⅳ)(森田和敏, 川原田洋)
第60回応用物理学会学術講演会
Presentation date: 1999.09
アンドープ水素終端ダイヤモンド表面の電極評価
第60回応用物理学会学術講演会
Presentation date: 1999.09
High Performance Diamond Field Effect Transistors Using Hydrogen-Terminated Surfaces for Electron Device and Sensor Applications
Proc ADC/FCT'99/NEDO,JFCC
Presentation date: 1999.09
Cluster Calculation of Diamond-SiC Interface Structures(K. Morita, H. Kawarada)
10th European Conference on Diamond, Diamond-Like Materials, Nitrides and Silicon Carbide
Presentation date: 1999.09
Fabrication of High Performance 1μm Gate Diamond FET Using Self-Aligned Gate Process(H. Umezawa, H. kawarada)
10th European Conference on Diamond, Diamond-Like Materials, Nitrides and Silicon Carbide
Presentation date: 1999.09
Ion Sensitive Field Effect Transistor on Hydrogen-terminated Polycrystalline Diamond Surfaces
10th European Conference on Diamond, Diamond-Like Materials, Nitrides and Silicon Carbide
Presentation date: 1999.09
ダイヤモンド水素終端面を用いたISFET(北谷謙一, 川原田洋)
応用物理学会(第46回)
Presentation date: 1999.03
微細化によるダイヤモンドMISFETの特性改善(梅澤仁, 川原田洋)
応用物理学会(第46回)
Presentation date: 1999.03
Diamond-SiC界面構造についてのクラスター計算(Ⅲ)(森田和敏, 川原田洋)
応用物理学会(第46回)
Presentation date: 1999.03
先端放電型マイクロ波プラズマCVDによるダイヤモンドの成長(福田徹, 川原田洋)
ダイヤモンドシンポジウム(第12回)
Presentation date: 1998.12
セルフアライン法による1μmゲートFETの作製(梅澤仁, 川原田洋)
ダイヤモンドシンポジウム(第12回)
Presentation date: 1998.12
リンドープ{111}ホモエピタキシャルダイヤモンド薄膜のCL評価(田辺憲司, 川原田洋)
ダイヤモンドシンポジウム(第12回)
Presentation date: 1998.12
セルフアライン法による1μmゲートFETの作製(梅澤仁, 川原田洋)
応用物理学関連講演会(第59回)
Presentation date: 1998.09
リンドープ{111}ホモエピタキシャルダイヤモンド薄膜のCL評価(田辺憲司, 川原田洋)
応用物理学関連講演会(第59回)
Presentation date: 1998.09
Diamond-Sic界面構造についてのクラスター計算(Ⅱ)(森田和敏, 川原田洋)
応用物理学関連講演会(第59回)
Presentation date: 1998.09
窒素イオン支援レーザー蒸着法により成膜したBCN膜の化学結合性(小川雄史, 川原田洋)
応用物理学関連講演会(第59回)
Presentation date: 1998.09
High-Performance Diamond Surface Channel FETs and Their Operation Mechanism (Invited presentation)(K. tsugawa, H. Kawarada)
9th European Conference on Diamond, Diamond-Like Materials,Nitrides and Silicon Carbide
Presentation date: 1998.09
FETs Fabrication on Hydrogen-Terminated Polycrystalline Diamond Surfaces(K. Kitatani, H. Kawarada)
9th European Conference on Diamond, Diamond-Like Materials,Nitrides and Silicon Carbide
Presentation date: 1998.09
Diamond field effect transistors using hydrogen-terminated surfaces (H. Kawarada)
Topical Workshop on Heterostructure Microelectronics for Information System Applications
Presentation date: 1998.08
Surface p-channel Metal-oxide-semiconductor Field Effect Transisitors Fabricated on Hydrogen Terminated(001) Surfaces of Diamond (Invited presentation)(H. Kawarada)
CIMTEC-World Ceramics Congress &Forum on New Materials, on Diamond, Diamond-Like Materials, Carbon Nanotubes, Nitrides & Silicon Florence
Presentation date: 1998.08
ダイヤモンド水素終端面を用いたFETの耐圧特性(北谷謙一, 川原田洋)
第45回応用物理学関係連合講演会/応用物理学会
Presentation date: 1998.03
Diamond-SiC界面構造についてのクラスター計算(I)(森田和敏, 川原田洋)
第45回応用物理学関係連合講演会/応用物理学会
Presentation date: 1998.03
先端放電型マイクロ波プラズマCVDによるダイヤモンド形成(II)(江田研一郎, 川原田洋)
第45回応用物理学関係連合講演会/応用物理学会
Presentation date: 1998.03
水素終端ダイヤモンド表面を用いたMESFETのデバイスシミュレーション(II)
第45回応用物理学関係連合講演会/応用物理学会
Presentation date: 1998.03
マイクロ波プラズマによるダイヤモンド精製の無限大面積技術
第45回応用物理学関係連合講演会/応用物理学会
Presentation date: 1998.03
Metal-Semiconductor Field-Effect Transistors on Hydrogen-Terminated Diamond Surfaces
Synposium on Diamond Electronics Devices' 98
Presentation date: 1998.03
High-Performance Surface Channel Field Effect Transistors on Hydrogen-Terminated Diamond Surfaces
ハードエレクトロニクス'98国際ワークショップ
Presentation date: 1998.02
平坦化された多結晶ダイヤモンドを用いたMOSFET(北谷謙一, 川原田洋)
第11回ダイヤモンドシンポジウム/ニューダイヤモンドフォーラム
Presentation date: 1997.12
水素終端ダイヤモンド表面をもちいたFETのデバイスシミュレーション
第11回ダイヤモンドシンポジウム/ニューダイヤモンドフォーラム
Presentation date: 1997.12
平坦化された多結晶ダイヤモンドを用いたMOSFET(北谷謙一, 川原田洋)
第58回応用物理学会学術講演会/応用物理学会
Presentation date: 1997.10
水素終端ダイヤモンド表面のMOSFETシミュレーション(森田和敏, 川原田洋)
第58回応用物理学会学術講演会/応用物理学会
Presentation date: 1997.10
先端放電型マイクロ波プラズマCVDによるダイヤモンドの形成
第58回応用物理学会学術講演会/応用物理学会
Presentation date: 1997.10
ダイヤモンドのヘテロエピタキシャル成長と電界効果トランジスタ
学術振興会半導体界面制御技術第154委員会第20回研究会/日本学術振興会
Presentation date: 1997.10
MESFETs and MISFETs on hydrogen-terminated diamond surfaces (K. Tsugawa, H. Kawarada)
The International Conference on Silicon Carbide,Ⅲ-Nitride and Related Materials
Presentation date: 1997.08
ダイヤモンドFETと回路技術の現状
第107回応用物理学会結晶工学分科会研究会/応用物理学会
Presentation date: 1997.05
水素終端ダイヤモンド表面を用いたMISFETの高温動作
第44回応用物理学関係連合講演会/応用物理学会
Presentation date: 1997.03
水素終端ダイヤモンド表面に作製したショットキーダイオードの電気的特性
第44回応用物理学関係連合講演会/応用物理学会
Presentation date: 1997.03
傾斜β-SiC表面上のダイヤモンドヘテロエピタキシャル成長
第44回応用物理学関係連合講演会/応用物理学会
Presentation date: 1997.03
β-SiC基板上ヘテロエピタキシャルダイヤモンド薄膜におけるMESFETの作製
第44回応用物理学関係連合講演会/応用物理学会
Presentation date: 1997.03
ダイヤモンド自由励起子発光に対する表面処理効果
第44回応用物理学関係連合講演会/応用物理学会
Presentation date: 1997.03
Heteroepitaxial Daimond Growth on β-SiC
Int.Sym.Advanced Materials '97/Nat.Inst.Res.Inorga.Mat.
Presentation date: 1997.03
表面終端処理の自由励起子発光への影響
第10回ダイヤモンドシンポジウム/ニューダイヤモンドフォーラム
Presentation date: 1996.12
金属/水素終端ダイヤモンド界面の電気的特性
第10回ダイヤモンドシンポジウム/ニューダイヤモンドフォーラム
Presentation date: 1996.12
β-SiC基板上のヘテロエピタキシャルダイヤモンド薄膜におけるMESFETの作製
第10回ダイヤモンドシンポジウム/ニューダイヤモンドフォーラム
Presentation date: 1996.12
E/D構成集積回路とMISFETの作製と評価
第10回ダイヤモンドシンポジウム/ニューダイヤモンドフォーラム
Presentation date: 1996.12
ダイヤモンド電子デバイス
SiCおよび関連ワイドギャップ半導体研究会/応用物理学会
Presentation date: 1996.11
Surface Characterization of Smooth Heteroepitaxial Diamond Layers on β-SiC (001)
5th Int.Cof. the New Diamond Science and Technology
Presentation date: 1996.09
Enhancement/Depletion MESFETs of Diamond and Their Logic Circuits
5th Int.Cof. the New Diamond Science and Technology
Presentation date: 1996.09
Device Modeling of High Performance Diamond MESFETs using p-type Surface Semiconductive Layers
5th Int.Cof. the New Diamond Science and Technology
Presentation date: 1996.09
Comparative Study of Exitonic Recombination Radiation from Diamonds
5th Int.Cof. the New Diamond Science and Technology
Presentation date: 1996.09
Heteroepitaxial Growth of Diamond on SiC (招待講演)
Gordon Research Conference on "Diamond Film Synthesis"
Presentation date: 1996.08
Surface Properties of Hydrogen-terminated Diamonds and Their Applications to Electron Devices (招待講演)
International School of Physics "Enrico Fermi",The Physics of Diamond/イタリア物理学会( )
Presentation date: 1996.07
β-SiC(100)基板上のダイヤモンドヘテロエピタキシャル成長のAFM観察
第43回応用物理学関連連合講演会
Presentation date: 1996.03
メタン・酸素金剛ガスによって成膜されたホモエピタキシャルダイヤモンドのショットキー特性
第43回応用物理学関連連合講演会
Presentation date: 1996.03
デプレッションモードダイヤモンドMESFETの作製と評価
第43回応用物理学関連連合講演会
Presentation date: 1996.03
表面伝導層ダイヤモンドMESFETの集積回路への基礎検討
第56回応用物理学会学術講演会
Presentation date: 1995.08
素子分離されたダイヤモンドMESFETの作製と評価II
第56回応用物理学会学術講演会
Presentation date: 1995.08
cubic状CVDダイヤモンドのカソードルミネッセンス
第56回応用物理学会学術講演会
Presentation date: 1995.08
CVDダイヤモンド表面のSTM/STS観察
第56回応用物理学会学術講演会
Presentation date: 1995.08
(110), (111)基板上の燃焼炎 ホモエピタキシャルダイヤモンドの励起子発光
第56回応用物理学会学術講演会
Presentation date: 1995.08
Surface and metal contact properties of H-terminated diamonds
International Conference of Formation of Semiconductor Interfaces-5(招待講演)/Princeton
Presentation date: 1995.07
Breakdown Mechanism of C-H Diamond MOSFETs Compared with Other Wide Bandgap Materials
H. Kawarada
The 12th New Diamond and Nano Carbons Conference (NDNC 2018) (Arizona, USA)
Presentation date: 1980.05
ダイヤモンド電界効果トランジスタの高周波デバイスおよびDNAセンサ応用
応用物理学会シリコンテクノロジ-
Science and Engineering Laboratory 1B III
School of Fundamental Science and Engineering
2022 fall semester
Science and Engineering Laboratory 1A III
School of Fundamental Science and Engineering
2022 spring semester
Introduction to Electronic and physical systems [S Grade]
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Introduction to Electronic and physical systems
School of Fundamental Science and Engineering
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Electronic and Physical Systems Laboratory A [S Grade]
School of Fundamental Science and Engineering
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Electronic and Physical Systems Laboratory A
School of Fundamental Science and Engineering
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Introduction to Electronic and Physical Systems [S Grade]
School of Fundamental Science and Engineering
2022 an intensive course(spring)
Introduction to Electronic and Physical Systems
School of Fundamental Science and Engineering
2022 an intensive course(spring)
Special Seminar on Electronic and Physical Systems
School of Fundamental Science and Engineering
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Electronic and Physical Systems Laboratory C [S Grade]
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Electronic and Physical Systems Laboratory C
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Electronic and Physical Systems Laboratory B [S Grade]
School of Fundamental Science and Engineering
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Electronic and Physical Systems Laboratory B
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Science and Engineering Laboratory 1B III
School of Creative Science and Engineering
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Science and Engineering Laboratory 1A III
School of Creative Science and Engineering
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School of Advanced Science and Engineering
2022 fall semester
Science and Engineering Laboratory 1A III
School of Advanced Science and Engineering
2022 spring semester
Integrative Nano-Science and Nano-Engineering
Graduate School of Fundamental Science and Engineering
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Master's Thesis (Department of Electronic and Physical Systems)
Graduate School of Fundamental Science and Engineering
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Energy Next Systems and Devices
Graduate School of Fundamental Science and Engineering
2022 spring semester
Graduate School of Fundamental Science and Engineering
2022 fall semester
Graduate School of Fundamental Science and Engineering
2022 spring semester
Graduate School of Fundamental Science and Engineering
2022 fall semester
Graduate School of Fundamental Science and Engineering
2022 spring semester
Graduate School of Fundamental Science and Engineering
2022 fall semester
Graduate School of Fundamental Science and Engineering
2022 spring semester
Graduate School of Fundamental Science and Engineering
2022 fall semester
Graduate School of Fundamental Science and Engineering
2022 spring semester
Master's Thesis (Department of Electronic and Physical Systems)
Graduate School of Fundamental Science and Engineering
2022 full year
Energy Next Systems and Devices
Graduate School of Creative Science and Engineering
2022 spring semester
Integrative Nano-Science and Nano-Engineering
Graduate School of Creative Science and Engineering
2022 spring semester
Master's Thesis (Department of Nanoscience and Nanoengineering)
Graduate School of Advanced Science and Engineering
2022 full year
Energy Next Systems and Devices
Graduate School of Advanced Science and Engineering
2022 spring semester
Integrative Nano-Science and Nano-Engineering
Graduate School of Advanced Science and Engineering
2022 spring semester
Master's Thesis (Department of Nanoscience and Nanoengineering)
Graduate School of Advanced Science and Engineering
2022 full year
Graduate School of Advanced Science and Engineering
2022 spring semester
Graduate School of Advanced Science and Engineering
2022 spring semester
Experiments in Nanoscience and Nanoengineering
Graduate School of Advanced Science and Engineering
2022 full year
Integrative Nano-Science and Nano-Engineering
Graduate School of Advanced Science and Engineering
2022 spring semester
Graduate School of Advanced Science and Engineering
2022 spring semester
Graduate School of Advanced Science and Engineering
2022 spring semester
Experiments in Nanoscience and Nanoengineering
Graduate School of Advanced Science and Engineering
2022 full year
Energy Next Systems and Devices
Graduate School of Advanced Science and Engineering
2022 spring semester
(社)ニューダイヤモンドフォーラム 顧問
New Diamond Forum Chairman
(社)ニューダイヤモンドフォーラム 会長
Science Council of Japan Member
日本学術会議 連携会員
Japan Applied Physics Society Board Member
応用物理学会 理事